2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 notes = "dual implantation, sic prec enhanced by vacancies,
122 precipitation by interstitial and substitutional
123 carbon, both mechanisms explained + refs",
127 title = "Carbon-mediated effects in silicon and in
128 silicon-related materials",
129 journal = "Materials Chemistry and Physics",
136 doi = "DOI: 10.1016/0254-0584(95)01673-I",
137 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
138 author = "W. Skorupa and R. A. Yankov",
139 notes = "review of silicon carbon compound",
143 author = "P. S. de Laplace",
144 title = "Th\'eorie analytique des probabilit\'es",
145 series = "Oeuvres Compl\`etes de Laplace",
147 publisher = "Gauthier-Villars",
151 @Article{mattoni2007,
152 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
153 title = "{Atomistic modeling of brittleness in covalent
155 journal = "Phys. Rev. B",
161 doi = "10.1103/PhysRevB.76.224103",
162 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
163 longe(r)-range-interactions, brittle propagation of
164 fracture, more available potentials, universal energy
165 relation (uer), minimum range model (mrm)",
169 title = "Comparative study of silicon empirical interatomic
171 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
172 journal = "Phys. Rev. B",
175 pages = "2250--2279",
179 doi = "10.1103/PhysRevB.46.2250",
180 publisher = "American Physical Society",
181 notes = "comparison of classical potentials for si",
185 title = "Stress relaxation in $a-Si$ induced by ion
187 author = "H. M. Urbassek M. Koster",
188 journal = "Phys. Rev. B",
191 pages = "11219--11224",
195 doi = "10.1103/PhysRevB.62.11219",
196 publisher = "American Physical Society",
197 notes = "virial derivation for 3-body tersoff potential",
200 @Article{breadmore99,
201 title = "Direct simulation of ion-beam-induced stressing and
202 amorphization of silicon",
203 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
204 journal = "Phys. Rev. B",
207 pages = "12610--12616",
211 doi = "10.1103/PhysRevB.60.12610",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
217 title = "First-Principles Calculation of Stress",
218 author = "O. H. Nielsen and Richard M. Martin",
219 journal = "Phys. Rev. Lett.",
226 doi = "10.1103/PhysRevLett.50.697",
227 publisher = "American Physical Society",
228 notes = "generalization of virial theorem",
232 title = "Quantum-mechanical theory of stress and force",
233 author = "O. H. Nielsen and Richard M. Martin",
234 journal = "Phys. Rev. B",
237 pages = "3780--3791",
241 doi = "10.1103/PhysRevB.32.3780",
242 publisher = "American Physical Society",
243 notes = "dft virial stress and forces",
247 author = "Henri Moissan",
248 title = "Nouvelles recherches sur la météorité de Cañon
250 journal = "Comptes rendus de l'Académie des Sciences",
257 author = "Y. S. Park",
258 title = "Si{C} Materials and Devices",
259 publisher = "Academic Press",
260 address = "San Diego",
265 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
266 Calvin H. Carter Jr. and D. Asbury",
267 title = "Si{C} Seeded Boule Growth",
268 journal = "Materials Science Forum",
272 notes = "modified lely process, micropipes",
276 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
277 Thermodynamical Properties of Lennard-Jones Molecules",
278 author = "Loup Verlet",
279 journal = "Phys. Rev.",
285 doi = "10.1103/PhysRev.159.98",
286 publisher = "American Physical Society",
287 notes = "velocity verlet integration algorithm equation of
291 @Article{berendsen84,
292 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
293 Gunsteren and A. DiNola and J. R. Haak",
295 title = "Molecular dynamics with coupling to an external bath",
298 journal = "J. Chem. Phys.",
301 pages = "3684--3690",
302 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
303 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
304 URL = "http://link.aip.org/link/?JCP/81/3684/1",
305 doi = "10.1063/1.448118",
306 notes = "berendsen thermostat barostat",
310 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
312 title = "Molecular dynamics determination of defect energetics
313 in beta -Si{C} using three representative empirical
315 journal = "Modell. Simul. Mater. Sci. Eng.",
319 URL = "http://stacks.iop.org/0965-0393/3/615",
320 notes = "comparison of tersoff, pearson and eam for defect
321 energetics in sic; (m)eam parameters for sic",
326 title = "Relationship between the embedded-atom method and
328 author = "Donald W. Brenner",
329 journal = "Phys. Rev. Lett.",
336 doi = "10.1103/PhysRevLett.63.1022",
337 publisher = "American Physical Society",
338 notes = "relation of tersoff and eam potential",
342 title = "Molecular-dynamics study of self-interstitials in
344 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
345 journal = "Phys. Rev. B",
348 pages = "9552--9558",
352 doi = "10.1103/PhysRevB.35.9552",
353 publisher = "American Physical Society",
354 notes = "selft-interstitials in silicon, stillinger-weber,
355 calculation of defect formation energy, defect
360 title = "Extended interstitials in silicon and germanium",
361 author = "H. R. Schober",
362 journal = "Phys. Rev. B",
365 pages = "13013--13015",
369 doi = "10.1103/PhysRevB.39.13013",
370 publisher = "American Physical Society",
371 notes = "stillinger-weber silicon 110 stable and metastable
372 dumbbell configuration",
376 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
377 Defect accumulation, topological features, and
379 author = "F. Gao and W. J. Weber",
380 journal = "Phys. Rev. B",
387 doi = "10.1103/PhysRevB.66.024106",
388 publisher = "American Physical Society",
389 notes = "sic intro, si cascade in 3c-sic, amorphization,
390 tersoff modified, pair correlation of amorphous sic, md
394 @Article{devanathan98,
395 title = "Computer simulation of a 10 ke{V} Si displacement
397 journal = "Nucl. Instrum. Methods Phys. Res. B",
403 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
404 author = "R. Devanathan and W. J. Weber and T. Diaz de la
406 notes = "modified tersoff short range potential, ab initio
410 @Article{devanathan98_2,
411 title = "Displacement threshold energies in [beta]-Si{C}",
412 journal = "J. Nucl. Mater.",
418 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
419 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
421 notes = "modified tersoff, ab initio, combined ab initio
425 @Article{kitabatake00,
426 title = "Si{C}/Si heteroepitaxial growth",
427 author = "M. Kitabatake",
428 journal = "Thin Solid Films",
433 notes = "md simulation, sic si heteroepitaxy, mbe",
437 title = "Intrinsic point defects in crystalline silicon:
438 Tight-binding molecular dynamics studies of
439 self-diffusion, interstitial-vacancy recombination, and
441 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
443 journal = "Phys. Rev. B",
446 pages = "14279--14289",
450 doi = "10.1103/PhysRevB.55.14279",
451 publisher = "American Physical Society",
452 notes = "si self interstitial, diffusion, tbmd",
456 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
459 title = "A kinetic Monte--Carlo study of the effective
460 diffusivity of the silicon self-interstitial in the
461 presence of carbon and boron",
464 journal = "J. Appl. Phys.",
467 pages = "1963--1967",
468 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
469 CARBON ADDITIONS; BORON ADDITIONS; elemental
470 semiconductors; self-diffusion",
471 URL = "http://link.aip.org/link/?JAP/84/1963/1",
472 doi = "10.1063/1.368328",
473 notes = "kinetic monte carlo of si self interstitial
478 title = "Barrier to Migration of the Silicon
480 author = "Y. Bar-Yam and J. D. Joannopoulos",
481 journal = "Phys. Rev. Lett.",
484 pages = "1129--1132",
488 doi = "10.1103/PhysRevLett.52.1129",
489 publisher = "American Physical Society",
490 notes = "si self-interstitial migration barrier",
493 @Article{bar-yam84_2,
494 title = "Electronic structure and total-energy migration
495 barriers of silicon self-interstitials",
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. B",
500 pages = "1844--1852",
504 doi = "10.1103/PhysRevB.30.1844",
505 publisher = "American Physical Society",
509 title = "First-principles calculations of self-diffusion
510 constants in silicon",
511 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
512 and D. B. Laks and W. Andreoni and S. T. Pantelides",
513 journal = "Phys. Rev. Lett.",
516 pages = "2435--2438",
520 doi = "10.1103/PhysRevLett.70.2435",
521 publisher = "American Physical Society",
522 notes = "si self int diffusion by ab initio md, formation
523 entropy calculations",
527 title = "Tight-binding theory of native point defects in
529 author = "L. Colombo",
530 journal = "Annu. Rev. Mater. Res.",
535 doi = "10.1146/annurev.matsci.32.111601.103036",
536 publisher = "Annual Reviews",
537 notes = "si self interstitial, tbmd, virial stress",
540 @Article{al-mushadani03,
541 title = "Free-energy calculations of intrinsic point defects in
543 author = "O. K. Al-Mushadani and R. J. Needs",
544 journal = "Phys. Rev. B",
551 doi = "10.1103/PhysRevB.68.235205",
552 publisher = "American Physical Society",
553 notes = "formation energies of intrinisc point defects in
554 silicon, si self interstitials, free energy",
557 @Article{goedecker02,
558 title = "A Fourfold Coordinated Point Defect in Silicon",
559 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
560 journal = "Phys. Rev. Lett.",
567 doi = "10.1103/PhysRevLett.88.235501",
568 publisher = "American Physical Society",
569 notes = "first time ffcd, fourfold coordinated point defect in
574 title = "Ab initio molecular dynamics simulation of
575 self-interstitial diffusion in silicon",
576 author = "Beat Sahli and Wolfgang Fichtner",
577 journal = "Phys. Rev. B",
584 doi = "10.1103/PhysRevB.72.245210",
585 publisher = "American Physical Society",
586 notes = "si self int, diffusion, barrier height, voronoi
591 title = "Ab initio calculations of the interaction between
592 native point defects in silicon",
593 journal = "Mater. Sci. Eng., B",
598 note = "EMRS 2005, Symposium D - Materials Science and Device
599 Issues for Future Technologies",
601 doi = "DOI: 10.1016/j.mseb.2005.08.072",
602 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
603 author = "G. Hobler and G. Kresse",
604 notes = "vasp intrinsic si defect interaction study, capture
609 title = "Ab initio study of self-diffusion in silicon over a
610 wide temperature range: Point defect states and
611 migration mechanisms",
612 author = "Shangyi Ma and Shaoqing Wang",
613 journal = "Phys. Rev. B",
620 doi = "10.1103/PhysRevB.81.193203",
621 publisher = "American Physical Society",
622 notes = "si self interstitial diffusion + refs",
626 title = "Atomistic simulations on the thermal stability of the
627 antisite pair in 3{C}- and 4{H}-Si{C}",
628 author = "M. Posselt and F. Gao and W. J. Weber",
629 journal = "Phys. Rev. B",
636 doi = "10.1103/PhysRevB.73.125206",
637 publisher = "American Physical Society",
641 title = "Correlation between self-diffusion in Si and the
642 migration mechanisms of vacancies and
643 self-interstitials: An atomistic study",
644 author = "M. Posselt and F. Gao and H. Bracht",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.78.035208",
653 publisher = "American Physical Society",
654 notes = "si self-interstitial and vacancy diffusion, stillinger
659 title = "Ab initio and empirical-potential studies of defect
660 properties in $3{C}-Si{C}$",
661 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
663 journal = "Phys. Rev. B",
670 doi = "10.1103/PhysRevB.64.245208",
671 publisher = "American Physical Society",
672 notes = "defects in 3c-sic",
676 title = "Empirical potential approach for defect properties in
678 journal = "Nucl. Instrum. Methods Phys. Res. B",
685 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
686 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
687 author = "Fei Gao and William J. Weber",
688 keywords = "Empirical potential",
689 keywords = "Defect properties",
690 keywords = "Silicon carbide",
691 keywords = "Computer simulation",
692 notes = "sic potential, brenner type, like erhart/albe",
696 title = "Atomistic study of intrinsic defect migration in
698 author = "Fei Gao and William J. Weber and M. Posselt and V.
700 journal = "Phys. Rev. B",
707 doi = "10.1103/PhysRevB.69.245205",
708 publisher = "American Physical Society",
709 notes = "defect migration in sic",
713 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
716 title = "Ab Initio atomic simulations of antisite pair recovery
717 in cubic silicon carbide",
720 journal = "Appl. Phys. Lett.",
726 keywords = "ab initio calculations; silicon compounds; antisite
727 defects; wide band gap semiconductors; molecular
728 dynamics method; density functional theory;
729 electron-hole recombination; photoluminescence;
730 impurities; diffusion",
731 URL = "http://link.aip.org/link/?APL/90/221915/1",
732 doi = "10.1063/1.2743751",
735 @Article{mattoni2002,
736 title = "Self-interstitial trapping by carbon complexes in
737 crystalline silicon",
738 author = "A. Mattoni and F. Bernardini and L. Colombo",
739 journal = "Phys. Rev. B",
746 doi = "10.1103/PhysRevB.66.195214",
747 publisher = "American Physical Society",
748 notes = "c in c-si, diffusion, interstitial configuration +
749 links, interaction of carbon and silicon interstitials,
750 tersoff suitability",
754 title = "Calculations of Silicon Self-Interstitial Defects",
755 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
757 journal = "Phys. Rev. Lett.",
760 pages = "2351--2354",
764 doi = "10.1103/PhysRevLett.83.2351",
765 publisher = "American Physical Society",
766 notes = "nice images of the defects, si defect overview +
771 title = "Identification of the migration path of interstitial
773 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
774 journal = "Phys. Rev. B",
777 pages = "7439--7442",
781 doi = "10.1103/PhysRevB.50.7439",
782 publisher = "American Physical Society",
783 notes = "carbon interstitial migration path shown, 001 c-si
788 title = "Theory of carbon-carbon pairs in silicon",
789 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
790 journal = "Phys. Rev. B",
793 pages = "9845--9850",
797 doi = "10.1103/PhysRevB.58.9845",
798 publisher = "American Physical Society",
799 notes = "c_i c_s pair configuration, theoretical results",
803 title = "Bistable interstitial-carbon--substitutional-carbon
805 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
807 journal = "Phys. Rev. B",
810 pages = "5765--5783",
814 doi = "10.1103/PhysRevB.42.5765",
815 publisher = "American Physical Society",
816 notes = "c_i c_s pair configuration, experimental results",
820 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
821 Shifeng Lu and Xiang-Yang Liu",
823 title = "Ab initio modeling and experimental study of {C}--{B}
827 journal = "Appl. Phys. Lett.",
831 keywords = "silicon; boron; carbon; elemental semiconductors;
832 impurity-defect interactions; ab initio calculations;
833 secondary ion mass spectra; diffusion; interstitials",
834 URL = "http://link.aip.org/link/?APL/80/52/1",
835 doi = "10.1063/1.1430505",
836 notes = "c-c 100 split, lower as a and b states of capaz",
840 title = "Ab initio investigation of carbon-related defects in
842 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
844 journal = "Phys. Rev. B",
847 pages = "12554--12557",
851 doi = "10.1103/PhysRevB.47.12554",
852 publisher = "American Physical Society",
853 notes = "c interstitials in crystalline silicon",
857 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
859 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
860 Sokrates T. Pantelides",
861 journal = "Phys. Rev. Lett.",
864 pages = "1814--1817",
868 doi = "10.1103/PhysRevLett.52.1814",
869 publisher = "American Physical Society",
870 notes = "microscopic theory diffusion silicon dft migration
875 title = "Unified Approach for Molecular Dynamics and
876 Density-Functional Theory",
877 author = "R. Car and M. Parrinello",
878 journal = "Phys. Rev. Lett.",
881 pages = "2471--2474",
885 doi = "10.1103/PhysRevLett.55.2471",
886 publisher = "American Physical Society",
887 notes = "car parrinello method, dft and md",
891 title = "Short-range order, bulk moduli, and physical trends in
892 c-$Si1-x$$Cx$ alloys",
893 author = "P. C. Kelires",
894 journal = "Phys. Rev. B",
897 pages = "8784--8787",
901 doi = "10.1103/PhysRevB.55.8784",
902 publisher = "American Physical Society",
903 notes = "c strained si, montecarlo md, bulk moduli, next
908 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
909 Application to the $Si1-x-yGexCy$ System",
910 author = "P. C. Kelires",
911 journal = "Phys. Rev. Lett.",
914 pages = "1114--1117",
918 doi = "10.1103/PhysRevLett.75.1114",
919 publisher = "American Physical Society",
920 notes = "mc md, strain compensation in si ge by c insertion",
924 title = "Low temperature electron irradiation of silicon
926 journal = "Solid State Communications",
933 doi = "DOI: 10.1016/0038-1098(70)90074-8",
934 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
935 author = "A. R. Bean and R. C. Newman",
939 author = "F. Durand and J. Duby",
940 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
941 title = "Carbon solubility in solid and liquid silicon—{A}
942 review with reference to eutectic equilibrium",
943 journal = "Journal of Phase Equilibria",
944 publisher = "Springer New York",
946 keyword = "Chemistry and Materials Science",
950 URL = "http://dx.doi.org/10.1361/105497199770335956",
951 note = "10.1361/105497199770335956",
953 notes = "better c solubility limit in silicon",
957 title = "{EPR} Observation of the Isolated Interstitial Carbon
959 author = "G. D. Watkins and K. L. Brower",
960 journal = "Phys. Rev. Lett.",
963 pages = "1329--1332",
967 doi = "10.1103/PhysRevLett.36.1329",
968 publisher = "American Physical Society",
969 notes = "epr observations of 100 interstitial carbon atom in
974 title = "{EPR} identification of the single-acceptor state of
975 interstitial carbon in silicon",
976 author = "L. W. Song and G. D. Watkins",
977 journal = "Phys. Rev. B",
980 pages = "5759--5764",
984 doi = "10.1103/PhysRevB.42.5759",
985 publisher = "American Physical Society",
986 notes = "carbon diffusion in silicon",
990 author = "A K Tipping and R C Newman",
991 title = "The diffusion coefficient of interstitial carbon in
993 journal = "Semicond. Sci. Technol.",
997 URL = "http://stacks.iop.org/0268-1242/2/315",
999 notes = "diffusion coefficient of carbon interstitials in
1004 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1007 title = "Annealing behavior of Me{V} implanted carbon in
1011 journal = "Journal of Applied Physics",
1014 pages = "3815--3820",
1015 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1016 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1018 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1019 doi = "10.1063/1.354474",
1020 notes = "c at interstitial location for rt implantation in si",
1024 title = "Carbon incorporation into Si at high concentrations by
1025 ion implantation and solid phase epitaxy",
1026 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1027 Picraux and J. K. Watanabe and J. W. Mayer",
1028 journal = "J. Appl. Phys.",
1033 doi = "10.1063/1.360806",
1034 notes = "strained silicon, carbon supersaturation",
1037 @Article{laveant2002,
1038 title = "Epitaxy of carbon-rich silicon with {MBE}",
1039 journal = "Mater. Sci. Eng., B",
1045 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1046 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1047 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1049 notes = "low c in si, tensile stress to compensate compressive
1050 stress, avoid sic precipitation",
1054 title = "The formation of swirl defects in silicon by
1055 agglomeration of self-interstitials",
1056 journal = "Journal of Crystal Growth",
1063 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1064 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1065 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1066 notes = "b-swirl: si + c interstitial agglomerates, c-si
1071 title = "Microdefects in silicon and their relation to point
1073 journal = "Journal of Crystal Growth",
1080 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1081 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1082 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1083 notes = "swirl review",
1087 author = "P. Werner and S. Eichler and G. Mariani and R.
1088 K{\"{o}}gler and W. Skorupa",
1089 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1090 silicon by transmission electron microscopy",
1093 journal = "Appl. Phys. Lett.",
1097 keywords = "silicon; ion implantation; carbon; crystal defects;
1098 transmission electron microscopy; annealing; positron
1099 annihilation; secondary ion mass spectroscopy; buried
1100 layers; precipitation",
1101 URL = "http://link.aip.org/link/?APL/70/252/1",
1102 doi = "10.1063/1.118381",
1103 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1107 @InProceedings{werner96,
1108 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1110 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1111 International Conference on",
1112 title = "{TEM} investigation of {C}-Si defects in carbon
1119 doi = "10.1109/IIT.1996.586497",
1121 notes = "c-si agglomerates dumbbells",
1125 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1128 title = "Carbon diffusion in silicon",
1131 journal = "Appl. Phys. Lett.",
1134 pages = "2465--2467",
1135 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1136 secondary ion mass spectra; semiconductor epitaxial
1137 layers; annealing; impurity-defect interactions;
1138 impurity distribution",
1139 URL = "http://link.aip.org/link/?APL/73/2465/1",
1140 doi = "10.1063/1.122483",
1141 notes = "c diffusion in si, kick out mechnism",
1145 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1147 title = "Self-interstitial enhanced carbon diffusion in
1151 journal = "Applied Physics Letters",
1155 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1156 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1157 TEMPERATURE; IMPURITIES",
1158 URL = "http://link.aip.org/link/?APL/45/268/1",
1159 doi = "10.1063/1.95167",
1160 notes = "c diffusion due to si self-interstitials",
1164 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1167 title = "Characterization of SiGe/Si heterostructures formed by
1168 Ge[sup + ] and {C}[sup + ] implantation",
1171 journal = "Applied Physics Letters",
1174 pages = "2345--2347",
1175 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1176 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1177 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1178 EPITAXY; CARBON IONS; GERMANIUM IONS",
1179 URL = "http://link.aip.org/link/?APL/57/2345/1",
1180 doi = "10.1063/1.103888",
1184 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1185 Doyle and S. T. Picraux and J. W. Mayer",
1187 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1190 journal = "Applied Physics Letters",
1193 pages = "2786--2788",
1194 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1195 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1196 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1197 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1198 EPITAXY; AMORPHIZATION",
1199 URL = "http://link.aip.org/link/?APL/63/2786/1",
1200 doi = "10.1063/1.110334",
1204 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1205 Picraux and J. K. Watanabe and J. W. Mayer",
1207 title = "Precipitation and relaxation in strained Si[sub 1 -
1208 y]{C}[sub y]/Si heterostructures",
1211 journal = "J. Appl. Phys.",
1214 pages = "3656--3668",
1215 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1216 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1217 doi = "10.1063/1.357429",
1218 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1219 precipitation by substitutional carbon, coherent prec,
1220 coherent to incoherent transition strain vs interface
1225 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1228 title = "Investigation of the high temperature behavior of
1229 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1232 journal = "J. Appl. Phys.",
1235 pages = "1934--1937",
1236 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1237 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1238 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1239 TEMPERATURE RANGE 04001000 K",
1240 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1241 doi = "10.1063/1.358826",
1245 title = "Prospects for device implementation of wide band gap
1247 author = "J. H. Edgar",
1248 journal = "J. Mater. Res.",
1253 doi = "10.1557/JMR.1992.0235",
1254 notes = "properties wide band gap semiconductor, sic
1258 @Article{zirkelbach2007,
1259 title = "Monte Carlo simulation study of a selforganisation
1260 process leading to ordered precipitate structures",
1261 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1263 journal = "Nucl. Instr. and Meth. B",
1270 doi = "doi:10.1016/j.nimb.2006.12.118",
1271 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1275 @Article{zirkelbach2006,
1276 title = "Monte-Carlo simulation study of the self-organization
1277 of nanometric amorphous precipitates in regular arrays
1278 during ion irradiation",
1279 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1281 journal = "Nucl. Instr. and Meth. B",
1288 doi = "doi:10.1016/j.nimb.2005.08.162",
1289 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1293 @Article{zirkelbach2005,
1294 title = "Modelling of a selforganization process leading to
1295 periodic arrays of nanometric amorphous precipitates by
1297 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1299 journal = "Comp. Mater. Sci.",
1306 doi = "doi:10.1016/j.commatsci.2004.12.016",
1307 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1311 @Article{zirkelbach09,
1312 title = "Molecular dynamics simulation of defect formation and
1313 precipitation in heavily carbon doped silicon",
1314 journal = "Mater. Sci. Eng., B",
1319 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1320 Silicon Materials Research for Electronic and
1321 Photovoltaic Applications",
1323 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1324 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1325 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1327 keywords = "Silicon",
1328 keywords = "Carbon",
1329 keywords = "Silicon carbide",
1330 keywords = "Nucleation",
1331 keywords = "Defect formation",
1332 keywords = "Molecular dynamics simulations",
1335 @Article{zirkelbach10,
1336 title = "Defects in carbon implanted silicon calculated by
1337 classical potentials and first-principles methods",
1338 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1339 K. N. Lindner and W. G. Schmidt and E. Rauls",
1340 journal = "Phys. Rev. B",
1347 doi = "10.1103/PhysRevB.82.094110",
1348 publisher = "American Physical Society",
1351 @Article{zirkelbach11a,
1352 title = "First principles study of defects in carbon implanted
1354 journal = "to be published",
1359 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1360 and W. G. Schmidt and E. Rauls",
1363 @Article{zirkelbach11b,
1365 journal = "to be published",
1370 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1371 K. N. Lindner and W. G. Schmidt and E. Rauls",
1375 author = "J. K. N. Lindner and A. Frohnwieser and B.
1376 Rauschenbach and B. Stritzker",
1377 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1379 journal = "MRS Online Proceedings Library",
1384 doi = "10.1557/PROC-354-171",
1385 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1386 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1387 notes = "first time ibs at moderate temperatures",
1391 title = "Formation of buried epitaxial silicon carbide layers
1392 in silicon by ion beam synthesis",
1393 journal = "Materials Chemistry and Physics",
1400 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1401 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1402 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1403 Götz and A. Frohnwieser and B. Rauschenbach and B.
1405 notes = "dose window",
1408 @Article{calcagno96,
1409 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1411 journal = "Nuclear Instruments and Methods in Physics Research
1412 Section B: Beam Interactions with Materials and Atoms",
1417 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1418 New Trends in Ion Beam Processing of Materials",
1420 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1421 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1422 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1423 Grimaldi and P. Musumeci",
1424 notes = "dose window, graphitic bonds",
1428 title = "Mechanisms of Si{C} Formation in the Ion Beam
1429 Synthesis of 3{C}-Si{C} Layers in Silicon",
1430 journal = "Materials Science Forum",
1435 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1436 URL = "http://www.scientific.net/MSF.264-268.215",
1437 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1438 notes = "intermediate temperature for sharp interface + good
1443 title = "Controlling the density distribution of Si{C}
1444 nanocrystals for the ion beam synthesis of buried Si{C}
1446 journal = "Nucl. Instrum. Methods Phys. Res. B",
1453 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1454 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1455 author = "J. K. N. Lindner and B. Stritzker",
1456 notes = "two-step implantation process",
1459 @Article{lindner99_2,
1460 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1462 journal = "Nucl. Instrum. Methods Phys. Res. B",
1468 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1469 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1470 author = "J. K. N. Lindner and B. Stritzker",
1471 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1475 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1476 Basic physical processes",
1477 journal = "Nucl. Instrum. Methods Phys. Res. B",
1484 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1485 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1486 author = "J{\"{o}}rg K. N. Lindner",
1490 title = "High-dose carbon implantations into silicon:
1491 fundamental studies for new technological tricks",
1492 author = "J. K. N. Lindner",
1493 journal = "Appl. Phys. A",
1497 doi = "10.1007/s00339-002-2062-8",
1498 notes = "ibs, burried sic layers",
1502 title = "On the balance between ion beam induced nanoparticle
1503 formation and displacive precipitate resolution in the
1505 journal = "Mater. Sci. Eng., C",
1510 note = "Current Trends in Nanoscience - from Materials to
1513 doi = "DOI: 10.1016/j.msec.2005.09.099",
1514 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1515 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1517 notes = "c int diffusion barrier",
1521 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1522 application in buffer layer for Ga{N} epitaxial
1524 journal = "Applied Surface Science",
1529 note = "APHYS'03 Special Issue",
1531 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1532 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1533 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1534 and S. Nishio and K. Yasuda and Y. Ishigami",
1535 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1538 @Article{yamamoto04,
1539 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1540 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1541 implantation into Si(1Â 1Â 1) substrate",
1542 journal = "Journal of Crystal Growth",
1547 note = "Proceedings of the 11th Biennial (US) Workshop on
1548 Organometallic Vapor Phase Epitaxy (OMVPE)",
1550 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1551 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1552 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1553 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1554 notes = "gan on 3c-sic",
1558 title = "Substrates for gallium nitride epitaxy",
1559 journal = "Materials Science and Engineering: R: Reports",
1566 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1567 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1568 author = "L. Liu and J. H. Edgar",
1569 notes = "gan substrates",
1572 @Article{takeuchi91,
1573 title = "Growth of single crystalline Ga{N} film on Si
1574 substrate using 3{C}-Si{C} as an intermediate layer",
1575 journal = "Journal of Crystal Growth",
1582 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1583 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1584 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1585 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1586 notes = "gan on 3c-sic (first time?)",
1590 author = "B. J. Alder and T. E. Wainwright",
1591 title = "Phase Transition for a Hard Sphere System",
1594 journal = "J. Chem. Phys.",
1597 pages = "1208--1209",
1598 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1599 doi = "10.1063/1.1743957",
1603 author = "B. J. Alder and T. E. Wainwright",
1604 title = "Studies in Molecular Dynamics. {I}. General Method",
1607 journal = "J. Chem. Phys.",
1611 URL = "http://link.aip.org/link/?JCP/31/459/1",
1612 doi = "10.1063/1.1730376",
1615 @Article{tersoff_si1,
1616 title = "New empirical model for the structural properties of
1618 author = "J. Tersoff",
1619 journal = "Phys. Rev. Lett.",
1626 doi = "10.1103/PhysRevLett.56.632",
1627 publisher = "American Physical Society",
1630 @Article{tersoff_si2,
1631 title = "New empirical approach for the structure and energy of
1633 author = "J. Tersoff",
1634 journal = "Phys. Rev. B",
1637 pages = "6991--7000",
1641 doi = "10.1103/PhysRevB.37.6991",
1642 publisher = "American Physical Society",
1645 @Article{tersoff_si3,
1646 title = "Empirical interatomic potential for silicon with
1647 improved elastic properties",
1648 author = "J. Tersoff",
1649 journal = "Phys. Rev. B",
1652 pages = "9902--9905",
1656 doi = "10.1103/PhysRevB.38.9902",
1657 publisher = "American Physical Society",
1661 title = "Empirical Interatomic Potential for Carbon, with
1662 Applications to Amorphous Carbon",
1663 author = "J. Tersoff",
1664 journal = "Phys. Rev. Lett.",
1667 pages = "2879--2882",
1671 doi = "10.1103/PhysRevLett.61.2879",
1672 publisher = "American Physical Society",
1676 title = "Modeling solid-state chemistry: Interatomic potentials
1677 for multicomponent systems",
1678 author = "J. Tersoff",
1679 journal = "Phys. Rev. B",
1682 pages = "5566--5568",
1686 doi = "10.1103/PhysRevB.39.5566",
1687 publisher = "American Physical Society",
1691 title = "Carbon defects and defect reactions in silicon",
1692 author = "J. Tersoff",
1693 journal = "Phys. Rev. Lett.",
1696 pages = "1757--1760",
1700 doi = "10.1103/PhysRevLett.64.1757",
1701 publisher = "American Physical Society",
1705 title = "Point defects and dopant diffusion in silicon",
1706 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1707 journal = "Rev. Mod. Phys.",
1714 doi = "10.1103/RevModPhys.61.289",
1715 publisher = "American Physical Society",
1719 title = "Silicon carbide: synthesis and processing",
1720 journal = "Nucl. Instrum. Methods Phys. Res. B",
1725 note = "Radiation Effects in Insulators",
1727 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1728 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1729 author = "W. Wesch",
1733 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1734 Palmour and J. A. Edmond",
1735 journal = "Proceedings of the IEEE",
1736 title = "Thin film deposition and microelectronic and
1737 optoelectronic device fabrication and characterization
1738 in monocrystalline alpha and beta silicon carbide",
1744 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1745 diode;SiC;dry etching;electrical
1746 contacts;etching;impurity incorporation;optoelectronic
1747 device fabrication;solid-state devices;surface
1748 chemistry;Schottky effect;Schottky gate field effect
1749 transistors;Schottky-barrier
1750 diodes;etching;heterojunction bipolar
1751 transistors;insulated gate field effect
1752 transistors;light emitting diodes;semiconductor
1753 materials;semiconductor thin films;silicon compounds;",
1754 doi = "10.1109/5.90132",
1756 notes = "sic growth methods",
1760 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1761 Lin and B. Sverdlov and M. Burns",
1763 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1764 ZnSe-based semiconductor device technologies",
1767 journal = "J. Appl. Phys.",
1770 pages = "1363--1398",
1771 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1772 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1773 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1775 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1776 doi = "10.1063/1.358463",
1777 notes = "sic intro, properties",
1781 author = "Noch Unbekannt",
1782 title = "How to find references",
1783 journal = "Journal of Applied References",
1790 title = "Atomistic simulation of thermomechanical properties of
1792 author = "Meijie Tang and Sidney Yip",
1793 journal = "Phys. Rev. B",
1796 pages = "15150--15159",
1799 doi = "10.1103/PhysRevB.52.15150",
1800 notes = "modified tersoff, scale cutoff with volume, promising
1801 tersoff reparametrization",
1802 publisher = "American Physical Society",
1806 title = "Silicon carbide as a new {MEMS} technology",
1807 journal = "Sensors and Actuators A: Physical",
1813 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1814 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1815 author = "Pasqualina M. Sarro",
1817 keywords = "Silicon carbide",
1818 keywords = "Micromachining",
1819 keywords = "Mechanical stress",
1823 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1824 semiconductor for high-temperature applications: {A}
1826 journal = "Solid-State Electronics",
1829 pages = "1409--1422",
1832 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1833 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1834 author = "J. B. Casady and R. W. Johnson",
1835 notes = "sic intro",
1838 @Article{giancarli98,
1839 title = "Design requirements for Si{C}/Si{C} composites
1840 structural material in fusion power reactor blankets",
1841 journal = "Fusion Engineering and Design",
1847 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1848 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1849 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1850 Marois and N. B. Morley and J. F. Salavy",
1854 title = "Electrical and optical characterization of Si{C}",
1855 journal = "Physica B: Condensed Matter",
1861 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1862 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1863 author = "G. Pensl and W. J. Choyke",
1867 title = "Investigation of growth processes of ingots of silicon
1868 carbide single crystals",
1869 journal = "J. Cryst. Growth",
1874 notes = "modified lely process",
1876 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1877 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1878 author = "Yu. M. Tairov and V. F. Tsvetkov",
1882 title = "General principles of growing large-size single
1883 crystals of various silicon carbide polytypes",
1884 journal = "Journal of Crystal Growth",
1891 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1892 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1893 author = "Yu.M. Tairov and V. F. Tsvetkov",
1897 title = "Si{C} boule growth by sublimation vapor transport",
1898 journal = "Journal of Crystal Growth",
1905 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1906 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1907 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1908 R. H. Hopkins and W. J. Choyke",
1912 title = "Growth of large Si{C} single crystals",
1913 journal = "Journal of Crystal Growth",
1920 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1921 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1922 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1923 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1928 title = "Control of polytype formation by surface energy
1929 effects during the growth of Si{C} monocrystals by the
1930 sublimation method",
1931 journal = "Journal of Crystal Growth",
1938 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1939 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1940 author = "R. A. Stein and P. Lanig",
1941 notes = "6h and 4h, sublimation technique",
1945 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1948 title = "Production of large-area single-crystal wafers of
1949 cubic Si{C} for semiconductor devices",
1952 journal = "Appl. Phys. Lett.",
1956 keywords = "silicon carbides; layers; chemical vapor deposition;
1958 URL = "http://link.aip.org/link/?APL/42/460/1",
1959 doi = "10.1063/1.93970",
1960 notes = "cvd of 3c-sic on si, sic buffer layer",
1964 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1965 and Hiroyuki Matsunami",
1967 title = "Epitaxial growth and electric characteristics of cubic
1971 journal = "J. Appl. Phys.",
1974 pages = "4889--4893",
1975 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1976 doi = "10.1063/1.338355",
1977 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1982 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1984 title = "Growth and Characterization of Cubic Si{C}
1985 Single-Crystal Films on Si",
1988 journal = "Journal of The Electrochemical Society",
1991 pages = "1558--1565",
1992 keywords = "semiconductor materials; silicon compounds; carbon
1993 compounds; crystal morphology; electron mobility",
1994 URL = "http://link.aip.org/link/?JES/134/1558/1",
1995 doi = "10.1149/1.2100708",
1996 notes = "blue light emitting diodes (led)",
1999 @Article{powell87_2,
2000 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2001 C. M. Chorey and T. T. Cheng and P. Pirouz",
2003 title = "Improved beta-Si{C} heteroepitaxial films using
2004 off-axis Si substrates",
2007 journal = "Applied Physics Letters",
2011 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2012 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2013 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2014 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2015 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2016 URL = "http://link.aip.org/link/?APL/51/823/1",
2017 doi = "10.1063/1.98824",
2018 notes = "improved sic on off-axis si substrates, reduced apbs",
2022 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2023 journal = "Journal of Crystal Growth",
2030 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2031 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2032 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2034 notes = "step-controlled epitaxy model",
2038 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2039 and Hiroyuki Matsunami",
2040 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2044 journal = "J. Appl. Phys.",
2048 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2049 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2051 URL = "http://link.aip.org/link/?JAP/73/726/1",
2052 doi = "10.1063/1.353329",
2053 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2056 @Article{powell90_2,
2057 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2058 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2059 Yoganathan and J. Yang and P. Pirouz",
2061 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2062 vicinal (0001) 6{H}-Si{C} wafers",
2065 journal = "Applied Physics Letters",
2068 pages = "1442--1444",
2069 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2070 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2071 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2072 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2073 URL = "http://link.aip.org/link/?APL/56/1442/1",
2074 doi = "10.1063/1.102492",
2075 notes = "cvd of 6h-sic on 6h-sic",
2079 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2081 title = "Chemical vapor deposition and characterization of
2082 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2086 journal = "Journal of Applied Physics",
2089 pages = "2672--2679",
2090 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2091 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2092 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2093 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2094 PHASE EPITAXY; CRYSTAL ORIENTATION",
2095 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2096 doi = "10.1063/1.341608",
2100 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2101 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2102 Yoganathan and J. Yang and P. Pirouz",
2104 title = "Growth of improved quality 3{C}-Si{C} films on
2105 6{H}-Si{C} substrates",
2108 journal = "Appl. Phys. Lett.",
2111 pages = "1353--1355",
2112 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2113 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2114 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2116 URL = "http://link.aip.org/link/?APL/56/1353/1",
2117 doi = "10.1063/1.102512",
2118 notes = "cvd of 3c-sic on 6h-sic",
2122 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2123 Rozgonyi and K. L. More",
2125 title = "An examination of double positioning boundaries and
2126 interface misfit in beta-Si{C} films on alpha-Si{C}
2130 journal = "Journal of Applied Physics",
2133 pages = "2645--2650",
2134 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2135 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2136 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2137 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2138 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2139 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2140 doi = "10.1063/1.341004",
2144 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2145 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2146 and W. J. Choyke and L. Clemen and M. Yoganathan",
2148 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2149 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2152 journal = "Applied Physics Letters",
2156 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2157 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2158 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2159 URL = "http://link.aip.org/link/?APL/59/333/1",
2160 doi = "10.1063/1.105587",
2164 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2165 Thokala and M. J. Loboda",
2167 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2168 films on 6{H}-Si{C} by chemical vapor deposition from
2172 journal = "J. Appl. Phys.",
2175 pages = "1271--1273",
2176 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2177 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2179 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2180 doi = "10.1063/1.360368",
2181 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2185 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2186 properties of its p-n junction",
2187 journal = "Journal of Crystal Growth",
2194 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2195 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2196 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2198 notes = "first time ssmbe of 3c-sic on 6h-sic",
2202 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2203 [alpha]-Si{C}(0001) at low temperatures by solid-source
2204 molecular beam epitaxy",
2205 journal = "J. Cryst. Growth",
2211 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2212 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2213 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2214 Schr{\"{o}}ter and W. Richter",
2215 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2218 @Article{fissel95_apl,
2219 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2221 title = "Low-temperature growth of Si{C} thin films on Si and
2222 6{H}--Si{C} by solid-source molecular beam epitaxy",
2225 journal = "Appl. Phys. Lett.",
2228 pages = "3182--3184",
2229 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2231 URL = "http://link.aip.org/link/?APL/66/3182/1",
2232 doi = "10.1063/1.113716",
2233 notes = "mbe 3c-sic on si and 6h-sic",
2237 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2238 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2240 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2241 migration enhanced epitaxy controlled to an atomic
2242 level using surface superstructures",
2245 journal = "Applied Physics Letters",
2248 pages = "1204--1206",
2249 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2250 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2252 URL = "http://link.aip.org/link/?APL/68/1204/1",
2253 doi = "10.1063/1.115969",
2254 notes = "ss mbe sic, superstructure, reconstruction",
2258 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2259 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2260 C. M. Bertoni and A. Catellani",
2261 journal = "Phys. Rev. Lett.",
2268 doi = "10.1103/PhysRevLett.91.136101",
2269 publisher = "American Physical Society",
2270 notes = "dft calculations mbe sic growth",
2274 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2276 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2280 journal = "Appl. Phys. Lett.",
2284 URL = "http://link.aip.org/link/?APL/18/509/1",
2285 doi = "10.1063/1.1653516",
2286 notes = "first time sic by ibs, follow cites for precipitation
2291 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2292 and E. V. Lubopytova",
2293 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2294 by ion implantation",
2295 publisher = "Taylor \& Francis",
2297 journal = "Radiation Effects",
2301 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2302 notes = "3c-sic for different temperatures, amorphous, poly,
2303 single crystalline",
2306 @Article{akimchenko80,
2307 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2308 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2309 title = "Structure and optical properties of silicon implanted
2310 by high doses of 70 and 310 ke{V} carbon ions",
2311 publisher = "Taylor \& Francis",
2313 journal = "Radiation Effects",
2317 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2318 notes = "3c-sic nucleation by thermal spikes",
2322 title = "Structure and annealing properties of silicon carbide
2323 thin layers formed by implantation of carbon ions in
2325 journal = "Thin Solid Films",
2332 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2333 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2334 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2339 title = "Characteristics of the synthesis of [beta]-Si{C} by
2340 the implantation of carbon ions into silicon",
2341 journal = "Thin Solid Films",
2348 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2349 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2350 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2355 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2356 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2357 Chater and J. A. Iulner and J. Davis",
2358 title = "Formation mechanisms and structures of insulating
2359 compounds formed in silicon by ion beam synthesis",
2360 publisher = "Taylor \& Francis",
2362 journal = "Radiation Effects",
2366 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2367 notes = "ibs, comparison with sio and sin, higher temp or
2372 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2373 J. Davis and G. E. Celler",
2375 title = "Formation of buried layers of beta-Si{C} using ion
2376 beam synthesis and incoherent lamp annealing",
2379 journal = "Appl. Phys. Lett.",
2382 pages = "2242--2244",
2383 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2384 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2385 URL = "http://link.aip.org/link/?APL/51/2242/1",
2386 doi = "10.1063/1.98953",
2387 notes = "nice tem images, sic by ibs",
2391 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2392 and M. Olivier and A. M. Papon and G. Rolland",
2394 title = "High-temperature ion beam synthesis of cubic Si{C}",
2397 journal = "Journal of Applied Physics",
2400 pages = "2908--2912",
2401 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2402 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2403 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2404 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2405 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2406 REACTIONS; MONOCRYSTALS",
2407 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2408 doi = "10.1063/1.346092",
2409 notes = "triple energy implantation to overcome high annealing
2414 author = "R. I. Scace and G. A. Slack",
2416 title = "Solubility of Carbon in Silicon and Germanium",
2419 journal = "J. Chem. Phys.",
2422 pages = "1551--1555",
2423 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2424 doi = "10.1063/1.1730236",
2425 notes = "solubility of c in c-si, si-c phase diagram",
2429 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2431 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2432 Laboratories Eindhoven Netherlands Eindhoven
2434 title = "Boron implantations in silicon: {A} comparison of
2435 charge carrier and boron concentration profiles",
2436 journal = "Applied Physics A: Materials Science \& Processing",
2437 publisher = "Springer Berlin / Heidelberg",
2439 keyword = "Physics and Astronomy",
2443 URL = "http://dx.doi.org/10.1007/BF00884267",
2444 note = "10.1007/BF00884267",
2446 notes = "first time ted (only for boron?)",
2450 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2453 title = "Rapid annealing and the anomalous diffusion of ion
2454 implanted boron into silicon",
2457 journal = "Applied Physics Letters",
2461 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2462 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2463 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2464 URL = "http://link.aip.org/link/?APL/50/416/1",
2465 doi = "10.1063/1.98160",
2466 notes = "ted of boron in si",
2470 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2473 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2474 time, and matrix dependence of atomic and electrical
2478 journal = "Journal of Applied Physics",
2481 pages = "6191--6198",
2482 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2483 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2484 CRYSTALS; AMORPHIZATION",
2485 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2486 doi = "10.1063/1.346910",
2487 notes = "ted of boron in si",
2491 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2492 F. W. Saris and W. Vandervorst",
2494 title = "Role of {C} and {B} clusters in transient diffusion of
2498 journal = "Appl. Phys. Lett.",
2501 pages = "1150--1152",
2502 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2503 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2505 URL = "http://link.aip.org/link/?APL/68/1150/1",
2506 doi = "10.1063/1.115706",
2507 notes = "suppression of transient enhanced diffusion (ted)",
2511 title = "Implantation and transient boron diffusion: the role
2512 of the silicon self-interstitial",
2513 journal = "Nucl. Instrum. Methods Phys. Res. B",
2518 note = "Selected Papers of the Tenth International Conference
2519 on Ion Implantation Technology (IIT '94)",
2521 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2522 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2523 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2528 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2529 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2530 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2533 title = "Physical mechanisms of transient enhanced dopant
2534 diffusion in ion-implanted silicon",
2537 journal = "J. Appl. Phys.",
2540 pages = "6031--6050",
2541 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2542 doi = "10.1063/1.364452",
2543 notes = "ted, transient enhanced diffusion, c silicon trap",
2547 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2549 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2550 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2553 journal = "Appl. Phys. Lett.",
2557 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2558 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2559 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2561 URL = "http://link.aip.org/link/?APL/64/324/1",
2562 doi = "10.1063/1.111195",
2563 notes = "beta sic nano crystals in si, mbe, annealing",
2567 author = "Richard A. Soref",
2569 title = "Optical band gap of the ternary semiconductor Si[sub 1
2570 - x - y]Ge[sub x]{C}[sub y]",
2573 journal = "J. Appl. Phys.",
2576 pages = "2470--2472",
2577 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2578 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2580 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2581 doi = "10.1063/1.349403",
2582 notes = "band gap of strained si by c",
2586 author = "E Kasper",
2587 title = "Superlattices of group {IV} elements, a new
2588 possibility to produce direct band gap material",
2589 journal = "Physica Scripta",
2592 URL = "http://stacks.iop.org/1402-4896/T35/232",
2594 notes = "superlattices, convert indirect band gap into a
2599 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2602 title = "Growth and strain compensation effects in the ternary
2603 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2606 journal = "Applied Physics Letters",
2609 pages = "3033--3035",
2610 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2611 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2612 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2613 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2615 URL = "http://link.aip.org/link/?APL/60/3033/1",
2616 doi = "10.1063/1.106774",
2620 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2623 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2627 journal = "J. Vac. Sci. Technol. B",
2630 pages = "1064--1068",
2631 location = "Ottawa (Canada)",
2632 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2633 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2634 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2635 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2636 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2637 doi = "10.1116/1.587008",
2638 notes = "substitutional c in si by mbe",
2641 @Article{powell93_2,
2642 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2643 of the ternary system",
2644 journal = "Journal of Crystal Growth",
2651 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2652 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2653 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2658 author = "H. J. Osten",
2659 title = "Modification of Growth Modes in Lattice-Mismatched
2660 Epitaxial Systems: Si/Ge",
2661 journal = "physica status solidi (a)",
2664 publisher = "WILEY-VCH Verlag",
2666 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2667 doi = "10.1002/pssa.2211450203",
2672 @Article{dietrich94,
2673 title = "Lattice distortion in a strain-compensated
2674 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2675 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2676 Methfessel and P. Zaumseil",
2677 journal = "Phys. Rev. B",
2680 pages = "17185--17190",
2684 doi = "10.1103/PhysRevB.49.17185",
2685 publisher = "American Physical Society",
2689 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2691 title = "Growth of an inverse tetragonal distorted SiGe layer
2692 on Si(001) by adding small amounts of carbon",
2695 journal = "Applied Physics Letters",
2698 pages = "3440--3442",
2699 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2700 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2701 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2703 URL = "http://link.aip.org/link/?APL/64/3440/1",
2704 doi = "10.1063/1.111235",
2705 notes = "inversely strained / distorted heterostructure",
2709 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2710 LeGoues and J. C. Tsang and F. Cardone",
2712 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2713 molecular beam epitaxy",
2716 journal = "Applied Physics Letters",
2720 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2721 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2722 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2723 FILM GROWTH; MICROSTRUCTURE",
2724 URL = "http://link.aip.org/link/?APL/60/356/1",
2725 doi = "10.1063/1.106655",
2729 author = "H. J. Osten and J. Griesche and S. Scalese",
2731 title = "Substitutional carbon incorporation in epitaxial
2732 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2733 molecular beam epitaxy",
2736 journal = "Appl. Phys. Lett.",
2740 keywords = "molecular beam epitaxial growth; semiconductor growth;
2741 wide band gap semiconductors; interstitials; silicon
2743 URL = "http://link.aip.org/link/?APL/74/836/1",
2744 doi = "10.1063/1.123384",
2745 notes = "substitutional c in si by mbe",
2748 @Article{hohenberg64,
2749 title = "Inhomogeneous Electron Gas",
2750 author = "P. Hohenberg and W. Kohn",
2751 journal = "Phys. Rev.",
2754 pages = "B864--B871",
2758 doi = "10.1103/PhysRev.136.B864",
2759 publisher = "American Physical Society",
2760 notes = "density functional theory, dft",
2764 title = "Self-Consistent Equations Including Exchange and
2765 Correlation Effects",
2766 author = "W. Kohn and L. J. Sham",
2767 journal = "Phys. Rev.",
2770 pages = "A1133--A1138",
2774 doi = "10.1103/PhysRev.140.A1133",
2775 publisher = "American Physical Society",
2776 notes = "dft, exchange and correlation",
2780 title = "Strain-stabilized highly concentrated pseudomorphic
2781 $Si1-x$$Cx$ layers in Si",
2782 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2784 journal = "Phys. Rev. Lett.",
2787 pages = "3578--3581",
2791 doi = "10.1103/PhysRevLett.72.3578",
2792 publisher = "American Physical Society",
2793 notes = "high c concentration in si, heterostructure, strained
2798 title = "Phosphorous Doping of Strain-Induced
2799 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2800 by Low-Temperature Chemical Vapor Deposition",
2801 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2802 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2803 journal = "Japanese Journal of Applied Physics",
2805 number = "Part 1, No. 4B",
2806 pages = "2472--2475",
2809 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2810 doi = "10.1143/JJAP.41.2472",
2811 publisher = "The Japan Society of Applied Physics",
2812 notes = "experimental charge carrier mobility in strained si",
2816 title = "Electron Transport Model for Strained Silicon-Carbon
2818 author = "Shu-Tong Chang and Chung-Yi Lin",
2819 journal = "Japanese J. Appl. Phys.",
2822 pages = "2257--2262",
2825 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2826 doi = "10.1143/JJAP.44.2257",
2827 publisher = "The Japan Society of Applied Physics",
2828 notes = "enhance of electron mobility in strained si",
2831 @Article{kissinger94,
2832 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2835 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2836 y] layers on Si(001)",
2839 journal = "Applied Physics Letters",
2842 pages = "3356--3358",
2843 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2844 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2845 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2846 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2847 URL = "http://link.aip.org/link/?APL/65/3356/1",
2848 doi = "10.1063/1.112390",
2849 notes = "strained si influence on optical properties",
2853 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2856 title = "Substitutional versus interstitial carbon
2857 incorporation during pseudomorphic growth of Si[sub 1 -
2858 y]{C}[sub y] on Si(001)",
2861 journal = "Journal of Applied Physics",
2864 pages = "6711--6715",
2865 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2866 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2868 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2869 doi = "10.1063/1.363797",
2870 notes = "mbe substitutional vs interstitial c incorporation",
2874 author = "H. J. Osten and P. Gaworzewski",
2876 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2877 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2881 journal = "J. Appl. Phys.",
2884 pages = "4977--4981",
2885 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2886 semiconductors; semiconductor epitaxial layers; carrier
2887 density; Hall mobility; interstitials; defect states",
2888 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2889 doi = "10.1063/1.366364",
2890 notes = "charge transport in strained si",
2894 title = "Carbon-mediated aggregation of self-interstitials in
2895 silicon: {A} large-scale molecular dynamics study",
2896 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2897 journal = "Phys. Rev. B",
2904 doi = "10.1103/PhysRevB.69.155214",
2905 publisher = "American Physical Society",
2906 notes = "simulation using promising tersoff reparametrization",
2910 title = "Event-Based Relaxation of Continuous Disordered
2912 author = "G. T. Barkema and Normand Mousseau",
2913 journal = "Phys. Rev. Lett.",
2916 pages = "4358--4361",
2920 doi = "10.1103/PhysRevLett.77.4358",
2921 publisher = "American Physical Society",
2922 notes = "activation relaxation technique, art, speed up slow
2927 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2928 Minoukadeh and F. Willaime",
2930 title = "Some improvements of the activation-relaxation
2931 technique method for finding transition pathways on
2932 potential energy surfaces",
2935 journal = "J. Chem. Phys.",
2941 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2942 surfaces; vacancies (crystal)",
2943 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2944 doi = "10.1063/1.3088532",
2945 notes = "improvements to art, refs for methods to find
2946 transition pathways",
2949 @Article{parrinello81,
2950 author = "M. Parrinello and A. Rahman",
2952 title = "Polymorphic transitions in single crystals: {A} new
2953 molecular dynamics method",
2956 journal = "J. Appl. Phys.",
2959 pages = "7182--7190",
2960 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2961 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2962 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2963 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2964 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2966 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2967 doi = "10.1063/1.328693",
2970 @Article{stillinger85,
2971 title = "Computer simulation of local order in condensed phases
2973 author = "Frank H. Stillinger and Thomas A. Weber",
2974 journal = "Phys. Rev. B",
2977 pages = "5262--5271",
2981 doi = "10.1103/PhysRevB.31.5262",
2982 publisher = "American Physical Society",
2986 title = "Empirical potential for hydrocarbons for use in
2987 simulating the chemical vapor deposition of diamond
2989 author = "Donald W. Brenner",
2990 journal = "Phys. Rev. B",
2993 pages = "9458--9471",
2997 doi = "10.1103/PhysRevB.42.9458",
2998 publisher = "American Physical Society",
2999 notes = "brenner hydro carbons",
3003 title = "Modeling of Covalent Bonding in Solids by Inversion of
3004 Cohesive Energy Curves",
3005 author = "Martin Z. Bazant and Efthimios Kaxiras",
3006 journal = "Phys. Rev. Lett.",
3009 pages = "4370--4373",
3013 doi = "10.1103/PhysRevLett.77.4370",
3014 publisher = "American Physical Society",
3015 notes = "first si edip",
3019 title = "Environment-dependent interatomic potential for bulk
3021 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3023 journal = "Phys. Rev. B",
3026 pages = "8542--8552",
3030 doi = "10.1103/PhysRevB.56.8542",
3031 publisher = "American Physical Society",
3032 notes = "second si edip",
3036 title = "Interatomic potential for silicon defects and
3038 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3039 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3040 journal = "Phys. Rev. B",
3043 pages = "2539--2550",
3047 doi = "10.1103/PhysRevB.58.2539",
3048 publisher = "American Physical Society",
3049 notes = "latest si edip, good dislocation explanation",
3053 title = "{PARCAS} molecular dynamics code",
3054 author = "K. Nordlund",
3059 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3061 author = "Arthur F. Voter",
3062 journal = "Phys. Rev. Lett.",
3065 pages = "3908--3911",
3069 doi = "10.1103/PhysRevLett.78.3908",
3070 publisher = "American Physical Society",
3071 notes = "hyperdynamics, accelerated md",
3075 author = "Arthur F. Voter",
3077 title = "A method for accelerating the molecular dynamics
3078 simulation of infrequent events",
3081 journal = "J. Chem. Phys.",
3084 pages = "4665--4677",
3085 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3086 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3087 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3088 energy functions; surface diffusion; reaction kinetics
3089 theory; potential energy surfaces",
3090 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3091 doi = "10.1063/1.473503",
3092 notes = "improved hyperdynamics md",
3095 @Article{sorensen2000,
3096 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3098 title = "Temperature-accelerated dynamics for simulation of
3102 journal = "J. Chem. Phys.",
3105 pages = "9599--9606",
3106 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3107 MOLECULAR DYNAMICS METHOD; surface diffusion",
3108 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3109 doi = "10.1063/1.481576",
3110 notes = "temperature accelerated dynamics, tad",
3114 title = "Parallel replica method for dynamics of infrequent
3116 author = "Arthur F. Voter",
3117 journal = "Phys. Rev. B",
3120 pages = "R13985--R13988",
3124 doi = "10.1103/PhysRevB.57.R13985",
3125 publisher = "American Physical Society",
3126 notes = "parallel replica method, accelerated md",
3130 author = "Xiongwu Wu and Shaomeng Wang",
3132 title = "Enhancing systematic motion in molecular dynamics
3136 journal = "J. Chem. Phys.",
3139 pages = "9401--9410",
3140 keywords = "molecular dynamics method; argon; Lennard-Jones
3141 potential; crystallisation; liquid theory",
3142 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3143 doi = "10.1063/1.478948",
3144 notes = "self guided md, sgmd, accelerated md, enhancing
3148 @Article{choudhary05,
3149 author = "Devashish Choudhary and Paulette Clancy",
3151 title = "Application of accelerated molecular dynamics schemes
3152 to the production of amorphous silicon",
3155 journal = "J. Chem. Phys.",
3161 keywords = "molecular dynamics method; silicon; glass structure;
3162 amorphous semiconductors",
3163 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3164 doi = "10.1063/1.1878733",
3165 notes = "explanation of sgmd and hyper md, applied to amorphous
3170 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3172 title = "Carbon precipitation in silicon: Why is it so
3176 journal = "Appl. Phys. Lett.",
3179 pages = "3336--3338",
3180 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3181 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3183 URL = "http://link.aip.org/link/?APL/62/3336/1",
3184 doi = "10.1063/1.109063",
3185 notes = "interfacial energy of cubic sic and si, si self
3186 interstitials necessary for precipitation, volume
3187 decrease, high interface energy",
3190 @Article{chaussende08,
3191 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3192 journal = "J. Cryst. Growth",
3197 note = "Proceedings of the E-MRS Conference, Symposium G -
3198 Substrates of Wide Bandgap Materials",
3200 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3201 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3202 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3203 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3204 and A. Andreadou and E. K. Polychroniadis and C.
3205 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3206 notes = "3c-sic crystal growth, sic fabrication + links,
3210 @Article{chaussende07,
3211 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3212 title = "Status of Si{C} bulk growth processes",
3213 journal = "Journal of Physics D: Applied Physics",
3217 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3219 notes = "review of sic single crystal growth methods, process
3224 title = "Forces in Molecules",
3225 author = "R. P. Feynman",
3226 journal = "Phys. Rev.",
3233 doi = "10.1103/PhysRev.56.340",
3234 publisher = "American Physical Society",
3235 notes = "hellmann feynman forces",
3239 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3240 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3241 their Contrasting Properties",
3242 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3244 journal = "Phys. Rev. Lett.",
3251 doi = "10.1103/PhysRevLett.84.943",
3252 publisher = "American Physical Society",
3253 notes = "si sio2 and sic sio2 interface",
3256 @Article{djurabekova08,
3257 title = "Atomistic simulation of the interface structure of Si
3258 nanocrystals embedded in amorphous silica",
3259 author = "Flyura Djurabekova and Kai Nordlund",
3260 journal = "Phys. Rev. B",
3267 doi = "10.1103/PhysRevB.77.115325",
3268 publisher = "American Physical Society",
3269 notes = "nc-si in sio2, interface energy, nc construction,
3270 angular distribution, coordination",
3274 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3275 W. Liang and J. Zou",
3277 title = "Nature of interfacial defects and their roles in
3278 strain relaxation at highly lattice mismatched
3279 3{C}-Si{C}/Si (001) interface",
3282 journal = "J. Appl. Phys.",
3288 keywords = "anelastic relaxation; crystal structure; dislocations;
3289 elemental semiconductors; semiconductor growth;
3290 semiconductor thin films; silicon; silicon compounds;
3291 stacking faults; wide band gap semiconductors",
3292 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3293 doi = "10.1063/1.3234380",
3294 notes = "sic/si interface, follow refs, tem image
3295 deconvolution, dislocation defects",
3298 @Article{kitabatake93,
3299 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3302 title = "Simulations and experiments of Si{C} heteroepitaxial
3303 growth on Si(001) surface",
3306 journal = "J. Appl. Phys.",
3309 pages = "4438--4445",
3310 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3311 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3312 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3313 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3314 doi = "10.1063/1.354385",
3315 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3319 @Article{kitabatake97,
3320 author = "Makoto Kitabatake",
3321 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3322 Heteroepitaxial Growth",
3323 publisher = "WILEY-VCH Verlag",
3325 journal = "physica status solidi (b)",
3328 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3329 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3330 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3334 title = "Strain relaxation and thermal stability of the
3335 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3337 journal = "Thin Solid Films",
3344 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3345 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3346 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3347 keywords = "Strain relaxation",
3348 keywords = "Interfaces",
3349 keywords = "Thermal stability",
3350 keywords = "Molecular dynamics",
3351 notes = "tersoff sic/si interface study",
3355 title = "Ab initio Study of Misfit Dislocations at the
3356 $Si{C}/Si(001)$ Interface",
3357 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3359 journal = "Phys. Rev. Lett.",
3366 doi = "10.1103/PhysRevLett.89.156101",
3367 publisher = "American Physical Society",
3368 notes = "sic/si interface study",
3371 @Article{pizzagalli03,
3372 title = "Theoretical investigations of a highly mismatched
3373 interface: Si{C}/Si(001)",
3374 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3376 journal = "Phys. Rev. B",
3383 doi = "10.1103/PhysRevB.68.195302",
3384 publisher = "American Physical Society",
3385 notes = "tersoff md and ab initio sic/si interface study",
3389 title = "Atomic configurations of dislocation core and twin
3390 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3391 electron microscopy",
3392 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3393 H. Zheng and J. W. Liang",
3394 journal = "Phys. Rev. B",
3401 doi = "10.1103/PhysRevB.75.184103",
3402 publisher = "American Physical Society",
3403 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3407 @Article{hornstra58,
3408 title = "Dislocations in the diamond lattice",
3409 journal = "Journal of Physics and Chemistry of Solids",
3416 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3417 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3418 author = "J. Hornstra",
3419 notes = "dislocations in diamond lattice",
3423 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3424 Ion `Hot' Implantation",
3425 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3426 Hirao and Naoki Arai and Tomio Izumi",
3427 journal = "Japanese J. Appl. Phys.",
3429 number = "Part 1, No. 2A",
3433 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3434 doi = "10.1143/JJAP.31.343",
3435 publisher = "The Japan Society of Applied Physics",
3436 notes = "c-c bonds in c implanted si, hot implantation
3437 efficiency, c-c hard to break by thermal annealing",
3440 @Article{eichhorn99,
3441 author = "F. Eichhorn and N. Schell and W. Matz and R.
3444 title = "Strain and Si{C} particle formation in silicon
3445 implanted with carbon ions of medium fluence studied by
3446 synchrotron x-ray diffraction",
3449 journal = "J. Appl. Phys.",
3452 pages = "4184--4187",
3453 keywords = "silicon; carbon; elemental semiconductors; chemical
3454 interdiffusion; ion implantation; X-ray diffraction;
3455 precipitation; semiconductor doping",
3456 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3457 doi = "10.1063/1.371344",
3458 notes = "sic conversion by ibs, detected substitutional carbon,
3459 expansion of si lattice",
3462 @Article{eichhorn02,
3463 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3464 Metzger and W. Matz and R. K{\"{o}}gler",
3466 title = "Structural relation between Si and Si{C} formed by
3467 carbon ion implantation",
3470 journal = "J. Appl. Phys.",
3473 pages = "1287--1292",
3474 keywords = "silicon compounds; wide band gap semiconductors; ion
3475 implantation; annealing; X-ray scattering; transmission
3476 electron microscopy",
3477 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3478 doi = "10.1063/1.1428105",
3479 notes = "3c-sic alignement to si host in ibs depending on
3480 temperature, might explain c into c sub trafo",
3484 author = "G Lucas and M Bertolus and L Pizzagalli",
3485 title = "An environment-dependent interatomic potential for
3486 silicon carbide: calculation of bulk properties,
3487 high-pressure phases, point and extended defects, and
3488 amorphous structures",
3489 journal = "J. Phys.: Condens. Matter",
3493 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3499 author = "J Godet and L Pizzagalli and S Brochard and P
3501 title = "Comparison between classical potentials and ab initio
3502 methods for silicon under large shear",
3503 journal = "J. Phys.: Condens. Matter",
3507 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3509 notes = "comparison of empirical potentials, stillinger weber,
3510 edip, tersoff, ab initio",
3513 @Article{moriguchi98,
3514 title = "Verification of Tersoff's Potential for Static
3515 Structural Analysis of Solids of Group-{IV} Elements",
3516 author = "Koji Moriguchi and Akira Shintani",
3517 journal = "Japanese J. Appl. Phys.",
3519 number = "Part 1, No. 2",
3523 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3524 doi = "10.1143/JJAP.37.414",
3525 publisher = "The Japan Society of Applied Physics",
3526 notes = "tersoff stringent test",
3529 @Article{mazzarolo01,
3530 title = "Low-energy recoils in crystalline silicon: Quantum
3532 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3533 Lulli and Eros Albertazzi",
3534 journal = "Phys. Rev. B",
3541 doi = "10.1103/PhysRevB.63.195207",
3542 publisher = "American Physical Society",
3545 @Article{holmstroem08,
3546 title = "Threshold defect production in silicon determined by
3547 density functional theory molecular dynamics
3549 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3550 journal = "Phys. Rev. B",
3557 doi = "10.1103/PhysRevB.78.045202",
3558 publisher = "American Physical Society",
3559 notes = "threshold displacement comparison empirical and ab
3563 @Article{nordlund97,
3564 title = "Repulsive interatomic potentials calculated using
3565 Hartree-Fock and density-functional theory methods",
3566 journal = "Nucl. Instrum. Methods Phys. Res. B",
3573 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3574 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3575 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3576 notes = "repulsive ab initio potential",
3580 title = "Efficiency of ab-initio total energy calculations for
3581 metals and semiconductors using a plane-wave basis
3583 journal = "Comput. Mater. Sci.",
3590 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3591 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3592 author = "G. Kresse and J. Furthm{\"{u}}ller",
3597 title = "Projector augmented-wave method",
3598 author = "P. E. Bl{\"o}chl",
3599 journal = "Phys. Rev. B",
3602 pages = "17953--17979",
3606 doi = "10.1103/PhysRevB.50.17953",
3607 publisher = "American Physical Society",
3608 notes = "paw method",
3612 title = "Norm-Conserving Pseudopotentials",
3613 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3614 journal = "Phys. Rev. Lett.",
3617 pages = "1494--1497",
3621 doi = "10.1103/PhysRevLett.43.1494",
3622 publisher = "American Physical Society",
3623 notes = "norm-conserving pseudopotentials",
3626 @Article{vanderbilt90,
3627 title = "Soft self-consistent pseudopotentials in a generalized
3628 eigenvalue formalism",
3629 author = "David Vanderbilt",
3630 journal = "Phys. Rev. B",
3633 pages = "7892--7895",
3637 doi = "10.1103/PhysRevB.41.7892",
3638 publisher = "American Physical Society",
3639 notes = "vasp pseudopotentials",
3643 title = "Accurate and simple density functional for the
3644 electronic exchange energy: Generalized gradient
3646 author = "John P. Perdew and Yue Wang",
3647 journal = "Phys. Rev. B",
3650 pages = "8800--8802",
3654 doi = "10.1103/PhysRevB.33.8800",
3655 publisher = "American Physical Society",
3656 notes = "rapid communication gga",
3660 title = "Generalized gradient approximations for exchange and
3661 correlation: {A} look backward and forward",
3662 journal = "Physica B: Condensed Matter",
3669 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3670 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3671 author = "John P. Perdew",
3672 notes = "gga overview",
3676 title = "Atoms, molecules, solids, and surfaces: Applications
3677 of the generalized gradient approximation for exchange
3679 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3680 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3681 and Carlos Fiolhais",
3682 journal = "Phys. Rev. B",
3685 pages = "6671--6687",
3689 doi = "10.1103/PhysRevB.46.6671",
3690 publisher = "American Physical Society",
3691 notes = "gga pw91 (as in vasp)",
3694 @Article{baldereschi73,
3695 title = "Mean-Value Point in the Brillouin Zone",
3696 author = "A. Baldereschi",
3697 journal = "Phys. Rev. B",
3700 pages = "5212--5215",
3704 doi = "10.1103/PhysRevB.7.5212",
3705 publisher = "American Physical Society",
3706 notes = "mean value k point",
3710 title = "Ab initio pseudopotential calculations of dopant
3712 journal = "Comput. Mater. Sci.",
3719 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3720 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3721 author = "Jing Zhu",
3722 keywords = "TED (transient enhanced diffusion)",
3723 keywords = "Boron dopant",
3724 keywords = "Carbon dopant",
3725 keywords = "Defect",
3726 keywords = "ab initio pseudopotential method",
3727 keywords = "Impurity cluster",
3728 notes = "binding of c to si interstitial, c in si defects",
3732 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3734 title = "Si{C} buried layer formation by ion beam synthesis at
3738 journal = "Appl. Phys. Lett.",
3741 pages = "2646--2648",
3742 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3743 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3744 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3745 ELECTRON MICROSCOPY",
3746 URL = "http://link.aip.org/link/?APL/66/2646/1",
3747 doi = "10.1063/1.113112",
3748 notes = "precipitation mechanism by substitutional carbon, si
3749 self interstitials react with further implanted c",
3753 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3754 Kolodzey and A. Hairie",
3756 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3760 journal = "J. Appl. Phys.",
3763 pages = "4631--4633",
3764 keywords = "silicon compounds; precipitation; localised modes;
3765 semiconductor epitaxial layers; infrared spectra;
3766 Fourier transform spectra; thermal stability;
3768 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3769 doi = "10.1063/1.368703",
3770 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3774 author = "R Jones and B J Coomer and P R Briddon",
3775 title = "Quantum mechanical modelling of defects in
3777 journal = "J. Phys.: Condens. Matter",
3781 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3783 notes = "ab inito dft intro, vibrational modes, c defect in
3788 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3789 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3790 J. E. Greene and S. G. Bishop",
3792 title = "Carbon incorporation pathways and lattice sites in
3793 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3794 molecular-beam epitaxy",
3797 journal = "J. Appl. Phys.",
3800 pages = "5716--5727",
3801 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3802 doi = "10.1063/1.1465122",
3803 notes = "c substitutional incorporation pathway, dft and expt",
3807 title = "Dynamic properties of interstitial carbon and
3808 carbon-carbon pair defects in silicon",
3809 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3811 journal = "Phys. Rev. B",
3814 pages = "2188--2194",
3818 doi = "10.1103/PhysRevB.55.2188",
3819 publisher = "American Physical Society",
3820 notes = "ab initio c in si and di-carbon defect, no formation
3821 energies, different migration barriers and paths",
3825 title = "Interstitial carbon and the carbon-carbon pair in
3826 silicon: Semiempirical electronic-structure
3828 author = "Matthew J. Burnard and Gary G. DeLeo",
3829 journal = "Phys. Rev. B",
3832 pages = "10217--10225",
3836 doi = "10.1103/PhysRevB.47.10217",
3837 publisher = "American Physical Society",
3838 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3839 carbon defect, formation energies",
3843 title = "Electronic structure of interstitial carbon in
3845 author = "Morgan Besson and Gary G. DeLeo",
3846 journal = "Phys. Rev. B",
3849 pages = "4028--4033",
3853 doi = "10.1103/PhysRevB.43.4028",
3854 publisher = "American Physical Society",
3858 title = "Review of atomistic simulations of surface diffusion
3859 and growth on semiconductors",
3860 journal = "Comput. Mater. Sci.",
3865 note = "Proceedings of the Workshop on Virtual Molecular Beam
3868 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3869 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3870 author = "Efthimios Kaxiras",
3871 notes = "might contain c 100 db formation energy, overview md,
3872 tight binding, first principles",
3875 @Article{kaukonen98,
3876 title = "Effect of {N} and {B} doping on the growth of {CVD}
3878 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3880 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3881 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3883 journal = "Phys. Rev. B",
3886 pages = "9965--9970",
3890 doi = "10.1103/PhysRevB.57.9965",
3891 publisher = "American Physical Society",
3892 notes = "constrained conjugate gradient relaxation technique
3897 title = "Correlation between the antisite pair and the ${DI}$
3899 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3900 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3902 journal = "Phys. Rev. B",
3909 doi = "10.1103/PhysRevB.67.155203",
3910 publisher = "American Physical Society",
3914 title = "Production and recovery of defects in Si{C} after
3915 irradiation and deformation",
3916 journal = "J. Nucl. Mater.",
3919 pages = "1803--1808",
3923 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3924 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3925 author = "J. Chen and P. Jung and H. Klein",
3929 title = "Accumulation, dynamic annealing and thermal recovery
3930 of ion-beam-induced disorder in silicon carbide",
3931 journal = "Nucl. Instrum. Methods Phys. Res. B",
3938 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3939 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3940 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3943 @Article{bockstedte03,
3944 title = "Ab initio study of the migration of intrinsic defects
3946 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3948 journal = "Phys. Rev. B",
3955 doi = "10.1103/PhysRevB.68.205201",
3956 publisher = "American Physical Society",
3957 notes = "defect migration in sic",
3961 title = "Theoretical study of vacancy diffusion and
3962 vacancy-assisted clustering of antisites in Si{C}",
3963 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3965 journal = "Phys. Rev. B",
3972 doi = "10.1103/PhysRevB.68.155208",
3973 publisher = "American Physical Society",
3977 journal = "Telegrafiya i Telefoniya bez Provodov",
3981 author = "O. V. Lossev",
3985 title = "Luminous carborundum detector and detection effect and
3986 oscillations with crystals",
3987 journal = "Philosophical Magazine Series 7",
3990 pages = "1024--1044",
3992 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3993 author = "O. V. Lossev",
3997 journal = "Physik. Zeitschr.",
4001 author = "O. V. Lossev",
4005 journal = "Physik. Zeitschr.",
4009 author = "O. V. Lossev",
4013 journal = "Physik. Zeitschr.",
4017 author = "O. V. Lossev",
4021 title = "A note on carborundum",
4022 journal = "Electrical World",
4026 author = "H. J. Round",
4029 @Article{vashishath08,
4030 title = "Recent trends in silicon carbide device research",
4031 journal = "Mj. Int. J. Sci. Tech.",
4036 author = "Munish Vashishath and Ashoke K. Chatterjee",
4037 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4038 notes = "sic polytype electronic properties",
4042 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4044 title = "Growth and Properties of beta-Si{C} Single Crystals",
4047 journal = "Journal of Applied Physics",
4051 URL = "http://link.aip.org/link/?JAP/37/333/1",
4052 doi = "10.1063/1.1707837",
4053 notes = "sic melt growth",
4057 author = "A. E. van Arkel and J. H. de Boer",
4058 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4060 publisher = "WILEY-VCH Verlag GmbH",
4062 journal = "Z. Anorg. Chem.",
4065 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4066 doi = "10.1002/zaac.19251480133",
4067 notes = "van arkel apparatus",
4071 author = "K. Moers",
4073 journal = "Z. Anorg. Chem.",
4076 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4081 author = "J. T. Kendall",
4082 title = "Electronic Conduction in Silicon Carbide",
4085 journal = "The Journal of Chemical Physics",
4089 URL = "http://link.aip.org/link/?JCP/21/821/1",
4090 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4095 author = "J. A. Lely",
4097 journal = "Ber. Deut. Keram. Ges.",
4100 notes = "lely sublimation growth process",
4103 @Article{knippenberg63,
4104 author = "W. F. Knippenberg",
4106 journal = "Philips Res. Repts.",
4109 notes = "acheson process",
4112 @Article{hoffmann82,
4113 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4116 title = "Silicon carbide blue light emitting diodes with
4117 improved external quantum efficiency",
4120 journal = "Journal of Applied Physics",
4123 pages = "6962--6967",
4124 keywords = "light emitting diodes; silicon carbides; quantum
4125 efficiency; visible radiation; experimental data;
4126 epitaxy; fabrication; medium temperature; layers;
4127 aluminium; nitrogen; substrates; pn junctions;
4128 electroluminescence; spectra; current density;
4130 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4131 doi = "10.1063/1.330041",
4132 notes = "blue led, sublimation process",
4136 author = "Philip Neudeck",
4137 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4138 Road 44135 Cleveland OH",
4139 title = "Progress in silicon carbide semiconductor electronics
4141 journal = "Journal of Electronic Materials",
4142 publisher = "Springer Boston",
4144 keyword = "Chemistry and Materials Science",
4148 URL = "http://dx.doi.org/10.1007/BF02659688",
4149 note = "10.1007/BF02659688",
4151 notes = "sic data, advantages of 3c sic",
4154 @Article{bhatnagar93,
4155 author = "M. Bhatnagar and B. J. Baliga",
4156 journal = "Electron Devices, IEEE Transactions on",
4157 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4164 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4165 rectifiers;Si;SiC;breakdown voltages;drift region
4166 properties;output characteristics;power MOSFETs;power
4167 semiconductor devices;switching characteristics;thermal
4168 analysis;Schottky-barrier diodes;electric breakdown of
4169 solids;insulated gate field effect transistors;power
4170 transistors;semiconductor materials;silicon;silicon
4171 compounds;solid-state rectifiers;thermal analysis;",
4172 doi = "10.1109/16.199372",
4174 notes = "comparison 3c 6h sic and si devices",
4178 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4179 A. Powell and C. S. Salupo and L. G. Matus",
4180 journal = "Electron Devices, IEEE Transactions on",
4181 title = "Electrical properties of epitaxial 3{C}- and
4182 6{H}-Si{C} p-n junction diodes produced side-by-side on
4183 6{H}-Si{C} substrates",
4189 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4190 C;6H-SiC layers;6H-SiC substrates;CVD
4191 process;SiC;chemical vapor deposition;doping;electrical
4192 properties;epitaxial layers;light
4193 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4194 diodes;polytype;rectification characteristics;reverse
4195 leakage current;reverse voltages;temperature;leakage
4196 currents;power electronics;semiconductor
4197 diodes;semiconductor epitaxial layers;semiconductor
4198 growth;semiconductor materials;silicon
4199 compounds;solid-state rectifiers;substrates;vapour
4200 phase epitaxial growth;",
4201 doi = "10.1109/16.285038",
4203 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4208 author = "N. Schulze and D. L. Barrett and G. Pensl",
4210 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4211 single crystals by physical vapor transport",
4214 journal = "Applied Physics Letters",
4217 pages = "1632--1634",
4218 keywords = "silicon compounds; semiconductor materials;
4219 semiconductor growth; crystal growth from vapour;
4220 photoluminescence; Hall mobility",
4221 URL = "http://link.aip.org/link/?APL/72/1632/1",
4222 doi = "10.1063/1.121136",
4223 notes = "micropipe free 6h-sic pvt growth",
4227 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4229 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4232 journal = "Applied Physics Letters",
4236 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4237 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4238 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4239 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4241 URL = "http://link.aip.org/link/?APL/50/221/1",
4242 doi = "10.1063/1.97667",
4243 notes = "apb 3c-sic heteroepitaxy on si",
4246 @Article{shibahara86,
4247 title = "Surface morphology of cubic Si{C}(100) grown on
4248 Si(100) by chemical vapor deposition",
4249 journal = "Journal of Crystal Growth",
4256 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4257 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4258 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4260 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4263 @Article{desjardins96,
4264 author = "P. Desjardins and J. E. Greene",
4266 title = "Step-flow epitaxial growth on two-domain surfaces",
4269 journal = "Journal of Applied Physics",
4272 pages = "1423--1434",
4273 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4274 FILM GROWTH; SURFACE STRUCTURE",
4275 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4276 doi = "10.1063/1.360980",
4277 notes = "apb model",
4281 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4283 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4284 carbonization of silicon",
4287 journal = "Journal of Applied Physics",
4290 pages = "2070--2073",
4291 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4292 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4294 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4295 doi = "10.1063/1.360184",
4296 notes = "ssmbe of sic on si, lower temperatures",
4300 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4301 {MBE} using surface superstructure",
4302 journal = "Journal of Crystal Growth",
4309 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4310 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4311 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4312 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4313 notes = "gas source mbe of 3c-sic on 6h-sic",
4316 @Article{yoshinobu92,
4317 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4318 and Takashi Fuyuki and Hiroyuki Matsunami",
4320 title = "Lattice-matched epitaxial growth of single crystalline
4321 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4322 molecular beam epitaxy",
4325 journal = "Applied Physics Letters",
4329 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4330 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4331 INTERFACE STRUCTURE",
4332 URL = "http://link.aip.org/link/?APL/60/824/1",
4333 doi = "10.1063/1.107430",
4334 notes = "gas source mbe of 3c-sic on 6h-sic",
4337 @Article{yoshinobu90,
4338 title = "Atomic level control in gas source {MBE} growth of
4340 journal = "Journal of Crystal Growth",
4347 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4348 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4349 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4350 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4351 notes = "gas source mbe of 3c-sic on 3c-sic",
4355 title = "Atomic layer epitaxy controlled by surface
4356 superstructures in Si{C}",
4357 journal = "Thin Solid Films",
4364 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4365 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4366 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4368 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4373 title = "Microscopic mechanisms of accurate layer-by-layer
4374 growth of [beta]-Si{C}",
4375 journal = "Thin Solid Films",
4382 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4383 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4384 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4385 and S. Misawa and E. Sakuma and S. Yoshida",
4386 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4391 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4393 title = "Effects of gas flow ratio on silicon carbide thin film
4394 growth mode and polytype formation during gas-source
4395 molecular beam epitaxy",
4398 journal = "Applied Physics Letters",
4401 pages = "2851--2853",
4402 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4403 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4404 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4406 URL = "http://link.aip.org/link/?APL/65/2851/1",
4407 doi = "10.1063/1.112513",
4408 notes = "gas source mbe of 6h-sic on 6h-sic",
4412 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4413 title = "Heterointerface Control and Epitaxial Growth of
4414 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4415 publisher = "WILEY-VCH Verlag",
4417 journal = "physica status solidi (b)",
4420 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4425 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4426 journal = "Journal of Crystal Growth",
4433 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4434 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4435 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4436 keywords = "Reflection high-energy electron diffraction (RHEED)",
4437 keywords = "Scanning electron microscopy (SEM)",
4438 keywords = "Silicon carbide",
4439 keywords = "Silicon",
4440 keywords = "Island growth",
4441 notes = "lower temperature, 550-700",
4444 @Article{hatayama95,
4445 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4446 on Si using hydrocarbon radicals by gas source
4447 molecular beam epitaxy",
4448 journal = "Journal of Crystal Growth",
4455 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4456 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4457 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4458 and Hiroyuki Matsunami",
4462 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4463 title = "The Preference of Silicon Carbide for Growth in the
4464 Metastable Cubic Form",
4465 journal = "Journal of the American Ceramic Society",
4468 publisher = "Blackwell Publishing Ltd",
4470 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4471 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4472 pages = "2630--2633",
4473 keywords = "silicon carbide, crystal growth, crystal structure,
4474 calculations, stability",
4476 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4477 polytype dft calculation refs",
4480 @Article{allendorf91,
4481 title = "The adsorption of {H}-atoms on polycrystalline
4482 [beta]-silicon carbide",
4483 journal = "Surface Science",
4490 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4491 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4492 author = "Mark D. Allendorf and Duane A. Outka",
4493 notes = "h adsorption on 3c-sic",
4496 @Article{eaglesham93,
4497 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4498 D. P. Adams and S. M. Yalisove",
4500 title = "Effect of {H} on Si molecular-beam epitaxy",
4503 journal = "Journal of Applied Physics",
4506 pages = "6615--6618",
4507 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4508 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4509 DIFFUSION; ADSORPTION",
4510 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4511 doi = "10.1063/1.355101",
4512 notes = "h incorporation on si surface, lower surface
4517 author = "Ronald C. Newman",
4518 title = "Carbon in Crystalline Silicon",
4519 journal = "MRS Online Proceedings Library",
4524 doi = "10.1557/PROC-59-403",
4525 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4526 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4530 title = "The diffusivity of carbon in silicon",
4531 journal = "Journal of Physics and Chemistry of Solids",
4538 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4539 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4540 author = "R. C. Newman and J. Wakefield",
4541 notes = "diffusivity of substitutional c in si",
4545 author = "U. Gösele",
4546 title = "The Role of Carbon and Point Defects in Silicon",
4547 journal = "MRS Online Proceedings Library",
4552 doi = "10.1557/PROC-59-419",
4553 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4554 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4558 title = "Convergence of supercell calculations for point
4559 defects in semiconductors: Vacancy in silicon",
4560 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4562 journal = "Phys. Rev. B",
4565 pages = "1318--1325",
4569 doi = "10.1103/PhysRevB.58.1318",
4570 publisher = "American Physical Society",
4571 notes = "convergence k point supercell size, vacancy in
4576 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4577 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4578 K{\"{o}}gler and W. Skorupa",
4580 title = "Spectroscopic characterization of phases formed by
4581 high-dose carbon ion implantation in silicon",
4584 journal = "Journal of Applied Physics",
4587 pages = "2978--2984",
4588 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4589 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4590 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4591 DEPENDENCE; PRECIPITATES; ANNEALING",
4592 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4593 doi = "10.1063/1.358714",