2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Comparative study of silicon empirical interatomic
102 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
103 journal = "Phys. Rev. B",
106 pages = "2250--2279",
110 doi = "10.1103/PhysRevB.46.2250",
111 publisher = "American Physical Society",
112 notes = "comparison of classical potentials for si",
116 title = "Stress relaxation in $a-Si$ induced by ion
118 author = "H. M. Urbassek M. Koster",
119 journal = "Phys. Rev. B",
122 pages = "11219--11224",
126 doi = "10.1103/PhysRevB.62.11219",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
131 @Article{breadmore99,
132 title = "Direct simulation of ion-beam-induced stressing and
133 amorphization of silicon",
134 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
135 journal = "Phys. Rev. B",
138 pages = "12610--12616",
142 doi = "10.1103/PhysRevB.60.12610",
143 publisher = "American Physical Society",
144 notes = "virial derivation for 3-body tersoff potential",
148 author = "Henri Moissan",
149 title = "Nouvelles recherches sur la météorité de Cañon
151 journal = "Comptes rendus de l'Académie des Sciences",
158 author = "Y. S. Park",
159 title = "Si{C} Materials and Devices",
160 publisher = "Academic Press",
161 address = "San Diego",
166 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
167 Calvin H. Carter Jr. and D. Asbury",
168 title = "Si{C} Seeded Boule Growth",
169 journal = "Materials Science Forum",
173 notes = "modified lely process, micropipes",
177 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
178 Thermodynamical Properties of Lennard-Jones Molecules",
179 author = "Loup Verlet",
180 journal = "Phys. Rev.",
186 doi = "10.1103/PhysRev.159.98",
187 publisher = "American Physical Society",
188 notes = "velocity verlet integration algorithm equation of
192 @Article{berendsen84,
193 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
194 Gunsteren and A. DiNola and J. R. Haak",
196 title = "Molecular dynamics with coupling to an external bath",
199 journal = "The Journal of Chemical Physics",
202 pages = "3684--3690",
203 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
204 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
205 URL = "http://link.aip.org/link/?JCP/81/3684/1",
206 doi = "10.1063/1.448118",
207 notes = "berendsen thermostat barostat",
211 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
213 title = "Molecular dynamics determination of defect energetics
214 in beta -Si{C} using three representative empirical
216 journal = "Modelling and Simulation in Materials Science and
221 URL = "http://stacks.iop.org/0965-0393/3/615",
222 notes = "comparison of tersoff, pearson and eam for defect
223 energetics in sic; (m)eam parameters for sic",
228 title = "Relationship between the embedded-atom method and
230 author = "Donald W. Brenner",
231 journal = "Phys. Rev. Lett.",
238 doi = "10.1103/PhysRevLett.63.1022",
239 publisher = "American Physical Society",
240 notes = "relation of tersoff and eam potential",
244 title = "Molecular-dynamics study of self-interstitials in
246 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
247 journal = "Phys. Rev. B",
250 pages = "9552--9558",
254 doi = "10.1103/PhysRevB.35.9552",
255 publisher = "American Physical Society",
256 notes = "selft-interstitials in silicon, stillinger-weber,
257 calculation of defect formation energy, defect
262 title = "Extended interstitials in silicon and germanium",
263 author = "H. R. Schober",
264 journal = "Phys. Rev. B",
267 pages = "13013--13015",
271 doi = "10.1103/PhysRevB.39.13013",
272 publisher = "American Physical Society",
273 notes = "stillinger-weber silicon 110 stable and metastable
274 dumbbell configuration",
278 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
279 Defect accumulation, topological features, and
281 author = "F. Gao and W. J. Weber",
282 journal = "Phys. Rev. B",
289 doi = "10.1103/PhysRevB.66.024106",
290 publisher = "American Physical Society",
291 notes = "sic intro, si cascade in 3c-sic, amorphization,
292 tersoff modified, pair correlation of amorphous sic, md
296 @Article{devanathan98,
297 title = "Computer simulation of a 10 ke{V} Si displacement
299 journal = "Nuclear Instruments and Methods in Physics Research
300 Section B: Beam Interactions with Materials and Atoms",
306 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
307 author = "R. Devanathan and W. J. Weber and T. Diaz de la
309 notes = "modified tersoff short range potential, ab initio
313 @Article{devanathan98_2,
314 title = "Displacement threshold energies in [beta]-Si{C}",
315 journal = "Journal of Nuclear Materials",
321 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
322 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
324 notes = "modified tersoff, ab initio, combined ab initio
329 title = "Si{C}/Si heteroepitaxial growth",
330 author = "M. Kitabatake",
331 journal = "Thin Solid Films",
336 notes = "md simulation, sic si heteroepitaxy, mbe",
340 title = "Intrinsic point defects in crystalline silicon:
341 Tight-binding molecular dynamics studies of
342 self-diffusion, interstitial-vacancy recombination, and
344 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
346 journal = "Phys. Rev. B",
349 pages = "14279--14289",
353 doi = "10.1103/PhysRevB.55.14279",
354 publisher = "American Physical Society",
355 notes = "si self interstitial, diffusion, tbmd",
359 title = "Tight-binding theory of native point defects in
361 author = "L. Colombo",
362 journal = "Annu. Rev. Mater. Res.",
367 doi = "10.1146/annurev.matsci.32.111601.103036",
368 publisher = "Annual Reviews",
369 notes = "si self interstitial, tbmd, virial stress",
373 title = "Ab initio and empirical-potential studies of defect
374 properties in $3{C}-Si{C}$",
375 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
377 journal = "Phys. Rev. B",
384 doi = "10.1103/PhysRevB.64.245208",
385 publisher = "American Physical Society",
386 notes = "defects in 3c-sic",
389 @Article{mattoni2002,
390 title = "Self-interstitial trapping by carbon complexes in
391 crystalline silicon",
392 author = "A. Mattoni and F. Bernardini and L. Colombo",
393 journal = "Phys. Rev. B",
400 doi = "10.1103/PhysRevB.66.195214",
401 publisher = "American Physical Society",
402 notes = "c in c-si, diffusion, interstitial configuration +
403 links, interaction of carbon and silicon
408 title = "Calculations of Silicon Self-Interstitial Defects",
409 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
411 journal = "Phys. Rev. Lett.",
414 pages = "2351--2354",
418 doi = "10.1103/PhysRevLett.83.2351",
419 publisher = "American Physical Society",
420 notes = "nice images of the defects, si defect overview +
425 title = "Identification of the migration path of interstitial
427 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
428 journal = "Phys. Rev. B",
431 pages = "7439--7442",
435 doi = "10.1103/PhysRevB.50.7439",
436 publisher = "American Physical Society",
437 notes = "carbon interstitial migration path shown, 001 c-si
442 title = "Ab initio investigation of carbon-related defects in
444 author = "A. Dal Pino and Andrew M. Rappe and J. D.
446 journal = "Phys. Rev. B",
449 pages = "12554--12557",
453 doi = "10.1103/PhysRevB.47.12554",
454 publisher = "American Physical Society",
455 notes = "c interstitials in crystalline silicon",
459 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
461 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
462 Sokrates T. Pantelides",
463 journal = "Phys. Rev. Lett.",
466 pages = "1814--1817",
470 doi = "10.1103/PhysRevLett.52.1814",
471 publisher = "American Physical Society",
472 notes = "microscopic theory diffusion silicon dft migration
477 title = "Short-range order, bulk moduli, and physical trends in
478 c-$Si1-x$$Cx$ alloys",
479 author = "P. C. Kelires",
480 journal = "Phys. Rev. B",
483 pages = "8784--8787",
487 doi = "10.1103/PhysRevB.55.8784",
488 publisher = "American Physical Society",
489 notes = "c strained si, montecarlo md, bulk moduli, next
494 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
495 Application to the $Si1-x-yGexCy$ System",
496 author = "P. C. Kelires",
497 journal = "Phys. Rev. Lett.",
500 pages = "1114--1117",
504 doi = "10.1103/PhysRevLett.75.1114",
505 publisher = "American Physical Society",
506 notes = "mc md, strain compensation in si ge by c insertion",
510 title = "Low temperature electron irradiation of silicon
512 journal = "Solid State Communications",
519 doi = "DOI: 10.1016/0038-1098(70)90074-8",
520 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
521 author = "A. R. Bean and R. C. Newman",
525 title = "{EPR} Observation of the Isolated Interstitial Carbon
527 author = "G. D. Watkins and K. L. Brower",
528 journal = "Phys. Rev. Lett.",
531 pages = "1329--1332",
535 doi = "10.1103/PhysRevLett.36.1329",
536 publisher = "American Physical Society",
537 notes = "epr observations of 100 interstitial carbon atom in
542 title = "{EPR} identification of the single-acceptor state of
543 interstitial carbon in silicon",
544 author = "G. D. Watkins L. W. Song",
545 journal = "Phys. Rev. B",
548 pages = "5759--5764",
552 doi = "10.1103/PhysRevB.42.5759",
553 publisher = "American Physical Society",
554 notes = "carbon diffusion in silicon",
558 author = "A K Tipping and R C Newman",
559 title = "The diffusion coefficient of interstitial carbon in
561 journal = "Semiconductor Science and Technology",
565 URL = "http://stacks.iop.org/0268-1242/2/315",
567 notes = "diffusion coefficient of carbon interstitials in
572 title = "Carbon incorporation into Si at high concentrations by
573 ion implantation and solid phase epitaxy",
574 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
575 Picraux and J. K. Watanabe and J. W. Mayer",
576 journal = "J. Appl. Phys.",
581 doi = "10.1063/1.360806",
582 notes = "strained silicon, carbon supersaturation",
585 @Article{laveant2002,
586 title = "Epitaxy of carbon-rich silicon with {MBE}",
587 author = "P. Laveant and G. Gerth and P. Werner and U.
589 journal = "Materials Science and Engineering B",
593 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
594 notes = "low c in si, tensile stress to compensate compressive
595 stress, avoid sic precipitation",
599 author = "P. Werner and S. Eichler and G. Mariani and R.
600 K{\"{o}}gler and W. Skorupa",
601 title = "Investigation of {C}[sub x]Si defects in {C} implanted
602 silicon by transmission electron microscopy",
605 journal = "Applied Physics Letters",
609 keywords = "silicon; ion implantation; carbon; crystal defects;
610 transmission electron microscopy; annealing; positron
611 annihilation; secondary ion mass spectroscopy; buried
612 layers; precipitation",
613 URL = "http://link.aip.org/link/?APL/70/252/1",
614 doi = "10.1063/1.118381",
615 notes = "si-c complexes, agglomerate, sic in si matrix, sic
620 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
621 Picraux and J. K. Watanabe and J. W. Mayer",
623 title = "Precipitation and relaxation in strained Si[sub 1 -
624 y]{C}[sub y]/Si heterostructures",
627 journal = "Journal of Applied Physics",
630 pages = "3656--3668",
631 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
632 URL = "http://link.aip.org/link/?JAP/76/3656/1",
633 doi = "10.1063/1.357429",
634 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
638 title = "Prospects for device implementation of wide band gap
640 author = "J. H. Edgar",
641 journal = "J. Mater. Res.",
646 doi = "10.1557/JMR.1992.0235",
647 notes = "properties wide band gap semiconductor, sic
651 @Article{zirkelbach2007,
652 title = "Monte Carlo simulation study of a selforganisation
653 process leading to ordered precipitate structures",
654 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
656 journal = "Nucl. Instr. and Meth. B",
663 doi = "doi:10.1016/j.nimb.2006.12.118",
664 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
668 @Article{zirkelbach2006,
669 title = "Monte-Carlo simulation study of the self-organization
670 of nanometric amorphous precipitates in regular arrays
671 during ion irradiation",
672 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
674 journal = "Nucl. Instr. and Meth. B",
681 doi = "doi:10.1016/j.nimb.2005.08.162",
682 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
686 @Article{zirkelbach2005,
687 title = "Modelling of a selforganization process leading to
688 periodic arrays of nanometric amorphous precipitates by
690 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
692 journal = "Comp. Mater. Sci.",
699 doi = "doi:10.1016/j.commatsci.2004.12.016",
700 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
705 title = "Controlling the density distribution of Si{C}
706 nanocrystals for the ion beam synthesis of buried Si{C}
708 journal = "Nuclear Instruments and Methods in Physics Research
709 Section B: Beam Interactions with Materials and Atoms",
716 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
717 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
718 author = "J. K. N. Lindner and B. Stritzker",
719 notes = "two-step implantation process",
722 @Article{lindner99_2,
723 title = "Mechanisms in the ion beam synthesis of Si{C} layers
725 journal = "Nuclear Instruments and Methods in Physics Research
726 Section B: Beam Interactions with Materials and Atoms",
733 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
734 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
735 author = "J. K. N. Lindner and B. Stritzker",
739 title = "Ion beam synthesis of buried Si{C} layers in silicon:
740 Basic physical processes",
741 journal = "Nuclear Instruments and Methods in Physics Research
742 Section B: Beam Interactions with Materials and Atoms",
749 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
750 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
751 author = "Jörg K. N. Lindner",
755 title = "High-dose carbon implantations into silicon:
756 fundamental studies for new technological tricks",
757 author = "J. K. N. Lindner",
758 journal = "Appl. Phys. A",
762 doi = "10.1007/s00339-002-2062-8",
763 notes = "ibs, burried sic layers",
767 author = "B. J. Alder and T. E. Wainwright",
768 title = "Phase Transition for a Hard Sphere System",
771 journal = "The Journal of Chemical Physics",
774 pages = "1208--1209",
775 URL = "http://link.aip.org/link/?JCP/27/1208/1",
776 doi = "10.1063/1.1743957",
780 author = "B. J. Alder and T. E. Wainwright",
781 title = "Studies in Molecular Dynamics. {I}. General Method",
784 journal = "The Journal of Chemical Physics",
788 URL = "http://link.aip.org/link/?JCP/31/459/1",
789 doi = "10.1063/1.1730376",
792 @Article{tersoff_si1,
793 title = "New empirical model for the structural properties of
795 author = "J. Tersoff",
796 journal = "Phys. Rev. Lett.",
803 doi = "10.1103/PhysRevLett.56.632",
804 publisher = "American Physical Society",
807 @Article{tersoff_si2,
808 title = "New empirical approach for the structure and energy of
810 author = "J. Tersoff",
811 journal = "Phys. Rev. B",
814 pages = "6991--7000",
818 doi = "10.1103/PhysRevB.37.6991",
819 publisher = "American Physical Society",
822 @Article{tersoff_si3,
823 title = "Empirical interatomic potential for silicon with
824 improved elastic properties",
825 author = "J. Tersoff",
826 journal = "Phys. Rev. B",
829 pages = "9902--9905",
833 doi = "10.1103/PhysRevB.38.9902",
834 publisher = "American Physical Society",
838 title = "Empirical Interatomic Potential for Carbon, with
839 Applications to Amorphous Carbon",
840 author = "J. Tersoff",
841 journal = "Phys. Rev. Lett.",
844 pages = "2879--2882",
848 doi = "10.1103/PhysRevLett.61.2879",
849 publisher = "American Physical Society",
853 title = "Modeling solid-state chemistry: Interatomic potentials
854 for multicomponent systems",
855 author = "J. Tersoff",
856 journal = "Phys. Rev. B",
859 pages = "5566--5568",
863 doi = "10.1103/PhysRevB.39.5566",
864 publisher = "American Physical Society",
868 title = "Carbon defects and defect reactions in silicon",
869 author = "J. Tersoff",
870 journal = "Phys. Rev. Lett.",
873 pages = "1757--1760",
877 doi = "10.1103/PhysRevLett.64.1757",
878 publisher = "American Physical Society",
882 title = "Point defects and dopant diffusion in silicon",
883 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
884 journal = "Rev. Mod. Phys.",
891 doi = "10.1103/RevModPhys.61.289",
892 publisher = "American Physical Society",
896 title = "Silicon carbide: synthesis and processing",
897 journal = "Nuclear Instruments and Methods in Physics Research
898 Section B: Beam Interactions with Materials and Atoms",
903 note = "Radiation Effects in Insulators",
905 doi = "DOI: 10.1016/0168-583X(96)00065-1",
906 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
911 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
912 Lin and B. Sverdlov and M. Burns",
914 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
915 ZnSe-based semiconductor device technologies",
918 journal = "Journal of Applied Physics",
921 pages = "1363--1398",
922 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
923 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
924 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
926 URL = "http://link.aip.org/link/?JAP/76/1363/1",
927 doi = "10.1063/1.358463",
931 author = "Noch Unbekannt",
932 title = "How to find references",
933 journal = "Journal of Applied References",
940 title = "Atomistic simulation of thermomechanical properties of
942 author = "Meijie Tang and Sidney Yip",
943 journal = "Phys. Rev. B",
946 pages = "15150--15159",
949 doi = "10.1103/PhysRevB.52.15150",
950 notes = "modified tersoff, scale cutoff with volume, promising
951 tersoff reparametrization",
952 publisher = "American Physical Society",
956 title = "Silicon carbide as a new {MEMS} technology",
957 journal = "Sensors and Actuators A: Physical",
963 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
964 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
965 author = "Pasqualina M. Sarro",
967 keywords = "Silicon carbide",
968 keywords = "Micromachining",
969 keywords = "Mechanical stress",
973 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
974 semiconductor for high-temperature applications: {A}
976 journal = "Solid-State Electronics",
979 pages = "1409--1422",
982 doi = "DOI: 10.1016/0038-1101(96)00045-7",
983 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
984 author = "J. B. Casady and R. W. Johnson",
987 @Article{giancarli98,
988 title = "Design requirements for Si{C}/Si{C} composites
989 structural material in fusion power reactor blankets",
990 journal = "Fusion Engineering and Design",
996 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
997 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
998 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
999 Marois and N. B. Morley and J. F. Salavy",
1003 title = "Electrical and optical characterization of Si{C}",
1004 journal = "Physica B: Condensed Matter",
1010 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1011 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1012 author = "G. Pensl and W. J. Choyke",
1016 title = "Investigation of growth processes of ingots of silicon
1017 carbide single crystals",
1018 journal = "Journal of Crystal Growth",
1023 notes = "modifief lely process",
1025 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1026 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1027 author = "Yu. M. Tairov and V. F. Tsvetkov",
1031 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1033 title = "Growth and Characterization of Cubic Si{C}
1034 Single-Crystal Films on Si",
1037 journal = "Journal of The Electrochemical Society",
1040 pages = "1558--1565",
1041 keywords = "semiconductor materials; silicon compounds; carbon
1042 compounds; crystal morphology; electron mobility",
1043 URL = "http://link.aip.org/link/?JES/134/1558/1",
1044 doi = "10.1149/1.2100708",
1045 notes = "blue light emitting diodes (led)",
1049 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1050 and Hiroyuki Matsunami",
1051 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1055 journal = "Journal of Applied Physics",
1059 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1060 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1062 URL = "http://link.aip.org/link/?JAP/73/726/1",
1063 doi = "10.1063/1.353329",
1064 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic"
1068 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1069 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1070 Yoganathan and J. Yang and P. Pirouz",
1072 title = "Growth of improved quality 3{C}-Si{C} films on
1073 6{H}-Si{C} substrates",
1076 journal = "Applied Physics Letters",
1079 pages = "1353--1355",
1080 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1081 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1082 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1084 URL = "http://link.aip.org/link/?APL/56/1353/1",
1085 doi = "10.1063/1.102512",
1086 notes = "cvd of 3c-sic on 6h-sic"
1090 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1091 Thokala and M. J. Loboda",
1093 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1094 films on 6{H}-Si{C} by chemical vapor deposition from
1098 journal = "Journal of Applied Physics",
1101 pages = "1271--1273",
1102 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1103 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1105 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1106 doi = "10.1063/1.360368",
1107 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1111 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1112 [alpha]-Si{C}(0001) at low temperatures by solid-source
1113 molecular beam epitaxy",
1114 journal = "Journal of Crystal Growth",
1119 notes = "solid source mbe",
1121 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1122 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1123 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1128 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1130 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1134 journal = "Applied Physics Letters",
1138 URL = "http://link.aip.org/link/?APL/18/509/1",
1139 notes = "first time sic by ibs",
1140 doi = "10.1063/1.1653516",
1144 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1145 J. Davis and G. E. Celler",
1147 title = "Formation of buried layers of beta-Si{C} using ion
1148 beam synthesis and incoherent lamp annealing",
1151 journal = "Applied Physics Letters",
1154 pages = "2242--2244",
1155 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1156 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1157 URL = "http://link.aip.org/link/?APL/51/2242/1",
1158 doi = "10.1063/1.98953",
1159 notes = "nice tem images, sic by ibs",
1163 author = "R. I. Scace and G. A. Slack",
1165 title = "Solubility of Carbon in Silicon and Germanium",
1168 journal = "The Journal of Chemical Physics",
1171 pages = "1551--1555",
1172 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1173 doi = "10.1063/1.1730236",
1174 notes = "solubility of c in c-si",
1178 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1179 F. W. Saris and W. Vandervorst",
1181 title = "Role of {C} and {B} clusters in transient diffusion of
1185 journal = "Applied Physics Letters",
1188 pages = "1150--1152",
1189 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1190 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1192 URL = "http://link.aip.org/link/?APL/68/1150/1",
1193 doi = "10.1063/1.115706",
1194 notes = "suppression of transient enhanced diffusion (ted)",
1198 title = "Implantation and transient boron diffusion: the role
1199 of the silicon self-interstitial",
1200 journal = "Nuclear Instruments and Methods in Physics Research
1201 Section B: Beam Interactions with Materials and Atoms",
1206 note = "Selected Papers of the Tenth International Conference
1207 on Ion Implantation Technology (IIT '94)",
1209 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1210 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1211 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1216 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1217 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1218 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1221 title = "Physical mechanisms of transient enhanced dopant
1222 diffusion in ion-implanted silicon",
1225 journal = "Journal of Applied Physics",
1228 pages = "6031--6050",
1229 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1230 doi = "10.1063/1.364452",
1231 notes = "ted, transient enhanced diffusion, c silicon trap",
1235 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1237 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1238 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1241 journal = "Applied Physics Letters",
1245 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1246 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1247 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1249 URL = "http://link.aip.org/link/?APL/64/324/1",
1250 doi = "10.1063/1.111195",
1251 notes = "beta sic nano crystals in si, mbe, annealing",
1255 author = "Richard A. Soref",
1257 title = "Optical band gap of the ternary semiconductor Si[sub 1
1258 - x - y]Ge[sub x]{C}[sub y]",
1261 journal = "Journal of Applied Physics",
1264 pages = "2470--2472",
1265 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1266 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1268 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1269 doi = "10.1063/1.349403",
1270 notes = "band gap of strained si by c",
1274 author = "E Kasper",
1275 title = "Superlattices of group {IV} elements, a new
1276 possibility to produce direct band gap material",
1277 journal = "Physica Scripta",
1280 URL = "http://stacks.iop.org/1402-4896/T35/232",
1282 notes = "superlattices, convert indirect band gap into a
1287 author = "H. J. Osten and J. Griesche and S. Scalese",
1289 title = "Substitutional carbon incorporation in epitaxial
1290 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1291 molecular beam epitaxy",
1294 journal = "Applied Physics Letters",
1298 keywords = "molecular beam epitaxial growth; semiconductor growth;
1299 wide band gap semiconductors; interstitials; silicon
1301 URL = "http://link.aip.org/link/?APL/74/836/1",
1302 doi = "10.1063/1.123384",
1303 notes = "substitutional c in si",
1306 @Article{hohenberg64,
1307 title = "Inhomogeneous Electron Gas",
1308 author = "P. Hohenberg and W. Kohn",
1309 journal = "Phys. Rev.",
1312 pages = "B864--B871",
1316 doi = "10.1103/PhysRev.136.B864",
1317 publisher = "American Physical Society",
1318 notes = "density functional theory, dft",
1322 title = "Self-Consistent Equations Including Exchange and
1323 Correlation Effects",
1324 author = "W. Kohn and L. J. Sham",
1325 journal = "Phys. Rev.",
1328 pages = "A1133--A1138",
1332 doi = "10.1103/PhysRev.140.A1133",
1333 publisher = "American Physical Society",
1334 notes = "dft, exchange and correlation",
1338 title = "Strain-stabilized highly concentrated pseudomorphic
1339 $Si1-x$$Cx$ layers in Si",
1340 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1342 journal = "Phys. Rev. Lett.",
1345 pages = "3578--3581",
1349 doi = "10.1103/PhysRevLett.72.3578",
1350 publisher = "American Physical Society",
1351 notes = "high c concentration in si, heterostructure, starined
1356 title = "Electron Transport Model for Strained Silicon-Carbon
1358 author = "Shu-Tong Chang and Chung-Yi Lin",
1359 journal = "Japanese Journal of Applied Physics",
1362 pages = "2257--2262",
1365 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1366 doi = "10.1143/JJAP.44.2257",
1367 publisher = "The Japan Society of Applied Physics",
1368 notes = "enhance of electron mobility in starined si",
1372 author = "H. J. Osten and P. Gaworzewski",
1374 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1375 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1379 journal = "Journal of Applied Physics",
1382 pages = "4977--4981",
1383 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1384 semiconductors; semiconductor epitaxial layers; carrier
1385 density; Hall mobility; interstitials; defect states",
1386 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1387 doi = "10.1063/1.366364",
1388 notes = "charge transport in strained si",
1392 title = "Carbon-mediated aggregation of self-interstitials in
1393 silicon: {A} large-scale molecular dynamics study",
1394 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1395 journal = "Phys. Rev. B",
1402 doi = "10.1103/PhysRevB.69.155214",
1403 publisher = "American Physical Society",
1404 notes = "simulation using promising tersoff reparametrization",
1408 title = "Event-Based Relaxation of Continuous Disordered
1410 author = "G. T. Barkema and Normand Mousseau",
1411 journal = "Phys. Rev. Lett.",
1414 pages = "4358--4361",
1418 doi = "10.1103/PhysRevLett.77.4358",
1419 publisher = "American Physical Society",
1420 notes = "activation relaxation technique, art, speed up slow
1425 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1426 Minoukadeh and F. Willaime",
1428 title = "Some improvements of the activation-relaxation
1429 technique method for finding transition pathways on
1430 potential energy surfaces",
1433 journal = "The Journal of Chemical Physics",
1439 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1440 surfaces; vacancies (crystal)",
1441 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1442 doi = "10.1063/1.3088532",
1443 notes = "improvements to art, refs for methods to find
1444 transition pathways",
1447 @Article{parrinello81,
1448 author = "M. Parrinello and A. Rahman",
1450 title = "Polymorphic transitions in single crystals: {A} new
1451 molecular dynamics method",
1454 journal = "Journal of Applied Physics",
1457 pages = "7182--7190",
1458 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1459 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1460 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1461 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1462 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1464 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1465 doi = "10.1063/1.328693",
1468 @Article{stillinger85,
1469 title = "Computer simulation of local order in condensed phases
1471 author = "Frank H. Stillinger and Thomas A. Weber",
1472 journal = "Phys. Rev. B",
1475 pages = "5262--5271",
1479 doi = "10.1103/PhysRevB.31.5262",
1480 publisher = "American Physical Society",
1484 title = "Environment-dependent interatomic potential for bulk
1486 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1488 journal = "Phys. Rev. B",
1491 pages = "8542--8552",
1495 doi = "10.1103/PhysRevB.56.8542",
1496 publisher = "American Physical Society",
1500 title = "Interatomic potential for silicon defects and
1502 author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
1503 Kaxiras and V. V. Bulatov and Sidney Yip",
1504 journal = "Phys. Rev. B",
1507 pages = "2539--2550",
1511 doi = "10.1103/PhysRevB.58.2539",
1512 publisher = "American Physical Society",
1516 title = "{PARCAS} molecular dynamics code",
1517 author = "K. Nordlund",
1522 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1524 author = "Arthur F. Voter",
1525 journal = "Phys. Rev. Lett.",
1528 pages = "3908--3911",
1532 doi = "10.1103/PhysRevLett.78.3908",
1533 publisher = "American Physical Society",
1534 notes = "hyperdynamics, accelerated md",
1538 author = "Arthur F. Voter",
1540 title = "A method for accelerating the molecular dynamics
1541 simulation of infrequent events",
1544 journal = "The Journal of Chemical Physics",
1547 pages = "4665--4677",
1548 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1549 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1550 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1551 energy functions; surface diffusion; reaction kinetics
1552 theory; potential energy surfaces",
1553 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1554 doi = "10.1063/1.473503",
1555 notes = "improved hyperdynamics md",
1558 @Article{sorensen2000,
1559 author = "Mads R. S\o rensen and Arthur F. Voter",
1561 title = "Temperature-accelerated dynamics for simulation of
1565 journal = "The Journal of Chemical Physics",
1568 pages = "9599--9606",
1569 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1570 MOLECULAR DYNAMICS METHOD; surface diffusion",
1571 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1572 doi = "10.1063/1.481576",
1573 notes = "temperature accelerated dynamics, tad",
1577 title = "Parallel replica method for dynamics of infrequent
1579 author = "Arthur F. Voter",
1580 journal = "Phys. Rev. B",
1583 pages = "R13985--R13988",
1587 doi = "10.1103/PhysRevB.57.R13985",
1588 publisher = "American Physical Society",
1589 notes = "parallel replica method, accelerated md",
1593 author = "Xiongwu Wu and Shaomeng Wang",
1595 title = "Enhancing systematic motion in molecular dynamics
1599 journal = "The Journal of Chemical Physics",
1602 pages = "9401--9410",
1603 keywords = "molecular dynamics method; argon; Lennard-Jones
1604 potential; crystallisation; liquid theory",
1605 URL = "http://link.aip.org/link/?JCP/110/9401/1",
1606 doi = "10.1063/1.478948",
1607 notes = "self guided md, sgmd, accelerated md, enhancing
1611 @Article{choudhary05,
1612 author = "Devashish Choudhary and Paulette Clancy",
1614 title = "Application of accelerated molecular dynamics schemes
1615 to the production of amorphous silicon",
1618 journal = "The Journal of Chemical Physics",
1624 keywords = "molecular dynamics method; silicon; glass structure;
1625 amorphous semiconductors",
1626 URL = "http://link.aip.org/link/?JCP/122/154509/1",
1627 doi = "10.1063/1.1878733",
1628 notes = "explanation of sgmd and hyper md, applied to amorphous
1633 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
1635 title = "Carbon precipitation in silicon: Why is it so
1639 journal = "Applied Physics Letters",
1642 pages = "3336--3338",
1643 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
1644 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
1646 URL = "http://link.aip.org/link/?APL/62/3336/1",
1647 doi = "10.1063/1.109063",
1648 notes = "interfacial energy of cubic sic and si",
1651 @Article{chaussende08,
1652 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
1653 journal = "Journal of Crystal Growth",
1658 note = "Proceedings of the E-MRS Conference, Symposium G -
1659 Substrates of Wide Bandgap Materials",
1661 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
1662 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
1663 author = "D. Chaussende and F. Mercier and A. Boulle and F.
1664 Conchon and M. Soueidan and G. Ferro and A. Mantzari
1665 and A. Andreadou and E. K. Polychroniadis and C.
1666 Balloud and S. Juillaguet and J. Camassel and M. Pons",
1667 notes = "3c-sic crystal growth, sic fabrication + links,