2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
122 notes = "dual implantation, sic prec enhanced by vacancies,
123 precipitation by interstitial and substitutional
124 carbon, both mechanisms explained + refs",
128 title = "Carbon-mediated effects in silicon and in
129 silicon-related materials",
130 journal = "Materials Chemistry and Physics",
137 doi = "DOI: 10.1016/0254-0584(95)01673-I",
138 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
139 author = "W. Skorupa and R. A. Yankov",
140 notes = "review of silicon carbon compound",
144 author = "P. S. de Laplace",
145 title = "Th\'eorie analytique des probabilit\'es",
146 series = "Oeuvres Compl\`etes de Laplace",
148 publisher = "Gauthier-Villars",
152 @Article{mattoni2007,
153 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
154 title = "{Atomistic modeling of brittleness in covalent
156 journal = "Phys. Rev. B",
162 doi = "10.1103/PhysRevB.76.224103",
163 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
164 longe(r)-range-interactions, brittle propagation of
165 fracture, more available potentials, universal energy
166 relation (uer), minimum range model (mrm)",
170 title = "Comparative study of silicon empirical interatomic
172 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
173 journal = "Phys. Rev. B",
176 pages = "2250--2279",
180 doi = "10.1103/PhysRevB.46.2250",
181 publisher = "American Physical Society",
182 notes = "comparison of classical potentials for si",
186 title = "Stress relaxation in $a-Si$ induced by ion
188 author = "H. M. Urbassek M. Koster",
189 journal = "Phys. Rev. B",
192 pages = "11219--11224",
196 doi = "10.1103/PhysRevB.62.11219",
197 publisher = "American Physical Society",
198 notes = "virial derivation for 3-body tersoff potential",
201 @Article{breadmore99,
202 title = "Direct simulation of ion-beam-induced stressing and
203 amorphization of silicon",
204 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
205 journal = "Phys. Rev. B",
208 pages = "12610--12616",
212 doi = "10.1103/PhysRevB.60.12610",
213 publisher = "American Physical Society",
214 notes = "virial derivation for 3-body tersoff potential",
218 title = "First-Principles Calculation of Stress",
219 author = "O. H. Nielsen and Richard M. Martin",
220 journal = "Phys. Rev. Lett.",
227 doi = "10.1103/PhysRevLett.50.697",
228 publisher = "American Physical Society",
229 notes = "generalization of virial theorem",
233 title = "Quantum-mechanical theory of stress and force",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. B",
238 pages = "3780--3791",
242 doi = "10.1103/PhysRevB.32.3780",
243 publisher = "American Physical Society",
244 notes = "dft virial stress and forces",
248 author = "Henri Moissan",
249 title = "Nouvelles recherches sur la météorité de Cañon
251 journal = "Comptes rendus de l'Académie des Sciences",
258 author = "Y. S. Park",
259 title = "Si{C} Materials and Devices",
260 publisher = "Academic Press",
261 address = "San Diego",
266 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
267 Calvin H. Carter Jr. and D. Asbury",
268 title = "Si{C} Seeded Boule Growth",
269 journal = "Materials Science Forum",
273 notes = "modified lely process, micropipes",
277 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
278 Thermodynamical Properties of Lennard-Jones Molecules",
279 author = "Loup Verlet",
280 journal = "Phys. Rev.",
286 doi = "10.1103/PhysRev.159.98",
287 publisher = "American Physical Society",
288 notes = "velocity verlet integration algorithm equation of
292 @Article{berendsen84,
293 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
294 Gunsteren and A. DiNola and J. R. Haak",
296 title = "Molecular dynamics with coupling to an external bath",
299 journal = "J. Chem. Phys.",
302 pages = "3684--3690",
303 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
304 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
305 URL = "http://link.aip.org/link/?JCP/81/3684/1",
306 doi = "10.1063/1.448118",
307 notes = "berendsen thermostat barostat",
311 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
313 title = "Molecular dynamics determination of defect energetics
314 in beta -Si{C} using three representative empirical
316 journal = "Modell. Simul. Mater. Sci. Eng.",
320 URL = "http://stacks.iop.org/0965-0393/3/615",
321 notes = "comparison of tersoff, pearson and eam for defect
322 energetics in sic; (m)eam parameters for sic",
327 title = "Relationship between the embedded-atom method and
329 author = "Donald W. Brenner",
330 journal = "Phys. Rev. Lett.",
337 doi = "10.1103/PhysRevLett.63.1022",
338 publisher = "American Physical Society",
339 notes = "relation of tersoff and eam potential",
343 title = "Molecular-dynamics study of self-interstitials in
345 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
346 journal = "Phys. Rev. B",
349 pages = "9552--9558",
353 doi = "10.1103/PhysRevB.35.9552",
354 publisher = "American Physical Society",
355 notes = "selft-interstitials in silicon, stillinger-weber,
356 calculation of defect formation energy, defect
361 title = "Extended interstitials in silicon and germanium",
362 author = "H. R. Schober",
363 journal = "Phys. Rev. B",
366 pages = "13013--13015",
370 doi = "10.1103/PhysRevB.39.13013",
371 publisher = "American Physical Society",
372 notes = "stillinger-weber silicon 110 stable and metastable
373 dumbbell configuration",
377 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
378 Defect accumulation, topological features, and
380 author = "F. Gao and W. J. Weber",
381 journal = "Phys. Rev. B",
388 doi = "10.1103/PhysRevB.66.024106",
389 publisher = "American Physical Society",
390 notes = "sic intro, si cascade in 3c-sic, amorphization,
391 tersoff modified, pair correlation of amorphous sic, md
395 @Article{devanathan98,
396 title = "Computer simulation of a 10 ke{V} Si displacement
398 journal = "Nucl. Instrum. Methods Phys. Res. B",
404 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
405 author = "R. Devanathan and W. J. Weber and T. Diaz de la
407 notes = "modified tersoff short range potential, ab initio
411 @Article{devanathan98_2,
412 title = "Displacement threshold energies in [beta]-Si{C}",
413 journal = "J. Nucl. Mater.",
419 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
420 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
422 notes = "modified tersoff, ab initio, combined ab initio
426 @Article{kitabatake00,
427 title = "Si{C}/Si heteroepitaxial growth",
428 author = "M. Kitabatake",
429 journal = "Thin Solid Films",
434 notes = "md simulation, sic si heteroepitaxy, mbe",
438 title = "Intrinsic point defects in crystalline silicon:
439 Tight-binding molecular dynamics studies of
440 self-diffusion, interstitial-vacancy recombination, and
442 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
444 journal = "Phys. Rev. B",
447 pages = "14279--14289",
451 doi = "10.1103/PhysRevB.55.14279",
452 publisher = "American Physical Society",
453 notes = "si self interstitial, diffusion, tbmd",
457 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
460 title = "A kinetic Monte--Carlo study of the effective
461 diffusivity of the silicon self-interstitial in the
462 presence of carbon and boron",
465 journal = "J. Appl. Phys.",
468 pages = "1963--1967",
469 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
470 CARBON ADDITIONS; BORON ADDITIONS; elemental
471 semiconductors; self-diffusion",
472 URL = "http://link.aip.org/link/?JAP/84/1963/1",
473 doi = "10.1063/1.368328",
474 notes = "kinetic monte carlo of si self interstitial
479 title = "Barrier to Migration of the Silicon
481 author = "Y. Bar-Yam and J. D. Joannopoulos",
482 journal = "Phys. Rev. Lett.",
485 pages = "1129--1132",
489 doi = "10.1103/PhysRevLett.52.1129",
490 publisher = "American Physical Society",
491 notes = "si self-interstitial migration barrier",
494 @Article{bar-yam84_2,
495 title = "Electronic structure and total-energy migration
496 barriers of silicon self-interstitials",
497 author = "Y. Bar-Yam and J. D. Joannopoulos",
498 journal = "Phys. Rev. B",
501 pages = "1844--1852",
505 doi = "10.1103/PhysRevB.30.1844",
506 publisher = "American Physical Society",
510 title = "First-principles calculations of self-diffusion
511 constants in silicon",
512 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
513 and D. B. Laks and W. Andreoni and S. T. Pantelides",
514 journal = "Phys. Rev. Lett.",
517 pages = "2435--2438",
521 doi = "10.1103/PhysRevLett.70.2435",
522 publisher = "American Physical Society",
523 notes = "si self int diffusion by ab initio md, formation
524 entropy calculations",
528 title = "Tight-binding theory of native point defects in
530 author = "L. Colombo",
531 journal = "Annu. Rev. Mater. Res.",
536 doi = "10.1146/annurev.matsci.32.111601.103036",
537 publisher = "Annual Reviews",
538 notes = "si self interstitial, tbmd, virial stress",
541 @Article{al-mushadani03,
542 title = "Free-energy calculations of intrinsic point defects in
544 author = "O. K. Al-Mushadani and R. J. Needs",
545 journal = "Phys. Rev. B",
552 doi = "10.1103/PhysRevB.68.235205",
553 publisher = "American Physical Society",
554 notes = "formation energies of intrinisc point defects in
555 silicon, si self interstitials, free energy",
558 @Article{goedecker02,
559 title = "A Fourfold Coordinated Point Defect in Silicon",
560 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
561 journal = "Phys. Rev. Lett.",
568 doi = "10.1103/PhysRevLett.88.235501",
569 publisher = "American Physical Society",
570 notes = "first time ffcd, fourfold coordinated point defect in
575 title = "Ab initio molecular dynamics simulation of
576 self-interstitial diffusion in silicon",
577 author = "Beat Sahli and Wolfgang Fichtner",
578 journal = "Phys. Rev. B",
585 doi = "10.1103/PhysRevB.72.245210",
586 publisher = "American Physical Society",
587 notes = "si self int, diffusion, barrier height, voronoi
592 title = "Ab initio calculations of the interaction between
593 native point defects in silicon",
594 journal = "Mater. Sci. Eng., B",
599 note = "EMRS 2005, Symposium D - Materials Science and Device
600 Issues for Future Technologies",
602 doi = "DOI: 10.1016/j.mseb.2005.08.072",
603 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
604 author = "G. Hobler and G. Kresse",
605 notes = "vasp intrinsic si defect interaction study, capture
610 title = "Ab initio study of self-diffusion in silicon over a
611 wide temperature range: Point defect states and
612 migration mechanisms",
613 author = "Shangyi Ma and Shaoqing Wang",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.81.193203",
622 publisher = "American Physical Society",
623 notes = "si self interstitial diffusion + refs",
627 title = "Atomistic simulations on the thermal stability of the
628 antisite pair in 3{C}- and 4{H}-Si{C}",
629 author = "M. Posselt and F. Gao and W. J. Weber",
630 journal = "Phys. Rev. B",
637 doi = "10.1103/PhysRevB.73.125206",
638 publisher = "American Physical Society",
642 title = "Correlation between self-diffusion in Si and the
643 migration mechanisms of vacancies and
644 self-interstitials: An atomistic study",
645 author = "M. Posselt and F. Gao and H. Bracht",
646 journal = "Phys. Rev. B",
653 doi = "10.1103/PhysRevB.78.035208",
654 publisher = "American Physical Society",
655 notes = "si self-interstitial and vacancy diffusion, stillinger
660 title = "Ab initio and empirical-potential studies of defect
661 properties in $3{C}-Si{C}$",
662 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
664 journal = "Phys. Rev. B",
671 doi = "10.1103/PhysRevB.64.245208",
672 publisher = "American Physical Society",
673 notes = "defects in 3c-sic",
677 title = "Empirical potential approach for defect properties in
679 journal = "Nucl. Instrum. Methods Phys. Res. B",
686 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
687 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
688 author = "Fei Gao and William J. Weber",
689 keywords = "Empirical potential",
690 keywords = "Defect properties",
691 keywords = "Silicon carbide",
692 keywords = "Computer simulation",
693 notes = "sic potential, brenner type, like erhart/albe",
697 title = "Atomistic study of intrinsic defect migration in
699 author = "Fei Gao and William J. Weber and M. Posselt and V.
701 journal = "Phys. Rev. B",
708 doi = "10.1103/PhysRevB.69.245205",
709 publisher = "American Physical Society",
710 notes = "defect migration in sic",
714 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
717 title = "Ab Initio atomic simulations of antisite pair recovery
718 in cubic silicon carbide",
721 journal = "Appl. Phys. Lett.",
727 keywords = "ab initio calculations; silicon compounds; antisite
728 defects; wide band gap semiconductors; molecular
729 dynamics method; density functional theory;
730 electron-hole recombination; photoluminescence;
731 impurities; diffusion",
732 URL = "http://link.aip.org/link/?APL/90/221915/1",
733 doi = "10.1063/1.2743751",
736 @Article{mattoni2002,
737 title = "Self-interstitial trapping by carbon complexes in
738 crystalline silicon",
739 author = "A. Mattoni and F. Bernardini and L. Colombo",
740 journal = "Phys. Rev. B",
747 doi = "10.1103/PhysRevB.66.195214",
748 publisher = "American Physical Society",
749 notes = "c in c-si, diffusion, interstitial configuration +
750 links, interaction of carbon and silicon interstitials,
751 tersoff suitability",
755 title = "Calculations of Silicon Self-Interstitial Defects",
756 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
758 journal = "Phys. Rev. Lett.",
761 pages = "2351--2354",
765 doi = "10.1103/PhysRevLett.83.2351",
766 publisher = "American Physical Society",
767 notes = "nice images of the defects, si defect overview +
772 title = "Identification of the migration path of interstitial
774 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
775 journal = "Phys. Rev. B",
778 pages = "7439--7442",
782 doi = "10.1103/PhysRevB.50.7439",
783 publisher = "American Physical Society",
784 notes = "carbon interstitial migration path shown, 001 c-si
789 title = "Theory of carbon-carbon pairs in silicon",
790 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
791 journal = "Phys. Rev. B",
794 pages = "9845--9850",
798 doi = "10.1103/PhysRevB.58.9845",
799 publisher = "American Physical Society",
800 notes = "c_i c_s pair configuration, theoretical results",
804 title = "Bistable interstitial-carbon--substitutional-carbon
806 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
808 journal = "Phys. Rev. B",
811 pages = "5765--5783",
815 doi = "10.1103/PhysRevB.42.5765",
816 publisher = "American Physical Society",
817 notes = "c_i c_s pair configuration, experimental results",
821 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
822 Shifeng Lu and Xiang-Yang Liu",
824 title = "Ab initio modeling and experimental study of {C}--{B}
828 journal = "Appl. Phys. Lett.",
832 keywords = "silicon; boron; carbon; elemental semiconductors;
833 impurity-defect interactions; ab initio calculations;
834 secondary ion mass spectra; diffusion; interstitials",
835 URL = "http://link.aip.org/link/?APL/80/52/1",
836 doi = "10.1063/1.1430505",
837 notes = "c-c 100 split, lower as a and b states of capaz",
841 title = "Ab initio investigation of carbon-related defects in
843 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
845 journal = "Phys. Rev. B",
848 pages = "12554--12557",
852 doi = "10.1103/PhysRevB.47.12554",
853 publisher = "American Physical Society",
854 notes = "c interstitials in crystalline silicon",
858 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
860 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
861 Sokrates T. Pantelides",
862 journal = "Phys. Rev. Lett.",
865 pages = "1814--1817",
869 doi = "10.1103/PhysRevLett.52.1814",
870 publisher = "American Physical Society",
871 notes = "microscopic theory diffusion silicon dft migration
876 title = "Unified Approach for Molecular Dynamics and
877 Density-Functional Theory",
878 author = "R. Car and M. Parrinello",
879 journal = "Phys. Rev. Lett.",
882 pages = "2471--2474",
886 doi = "10.1103/PhysRevLett.55.2471",
887 publisher = "American Physical Society",
888 notes = "car parrinello method, dft and md",
892 title = "Short-range order, bulk moduli, and physical trends in
893 c-$Si1-x$$Cx$ alloys",
894 author = "P. C. Kelires",
895 journal = "Phys. Rev. B",
898 pages = "8784--8787",
902 doi = "10.1103/PhysRevB.55.8784",
903 publisher = "American Physical Society",
904 notes = "c strained si, montecarlo md, bulk moduli, next
909 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
910 Application to the $Si1-x-yGexCy$ System",
911 author = "P. C. Kelires",
912 journal = "Phys. Rev. Lett.",
915 pages = "1114--1117",
919 doi = "10.1103/PhysRevLett.75.1114",
920 publisher = "American Physical Society",
921 notes = "mc md, strain compensation in si ge by c insertion",
925 title = "Low temperature electron irradiation of silicon
927 journal = "Solid State Communications",
934 doi = "DOI: 10.1016/0038-1098(70)90074-8",
935 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
936 author = "A. R. Bean and R. C. Newman",
940 author = "F. Durand and J. Duby",
941 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
942 title = "Carbon solubility in solid and liquid silicon—{A}
943 review with reference to eutectic equilibrium",
944 journal = "Journal of Phase Equilibria",
945 publisher = "Springer New York",
947 keyword = "Chemistry and Materials Science",
951 URL = "http://dx.doi.org/10.1361/105497199770335956",
952 note = "10.1361/105497199770335956",
954 notes = "better c solubility limit in silicon",
958 title = "{EPR} Observation of the Isolated Interstitial Carbon
960 author = "G. D. Watkins and K. L. Brower",
961 journal = "Phys. Rev. Lett.",
964 pages = "1329--1332",
968 doi = "10.1103/PhysRevLett.36.1329",
969 publisher = "American Physical Society",
970 notes = "epr observations of 100 interstitial carbon atom in
975 title = "{EPR} identification of the single-acceptor state of
976 interstitial carbon in silicon",
977 author = "L. W. Song and G. D. Watkins",
978 journal = "Phys. Rev. B",
981 pages = "5759--5764",
985 doi = "10.1103/PhysRevB.42.5759",
986 publisher = "American Physical Society",
987 notes = "carbon diffusion in silicon",
991 author = "A K Tipping and R C Newman",
992 title = "The diffusion coefficient of interstitial carbon in
994 journal = "Semicond. Sci. Technol.",
998 URL = "http://stacks.iop.org/0268-1242/2/315",
1000 notes = "diffusion coefficient of carbon interstitials in
1005 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1008 title = "Annealing behavior of Me{V} implanted carbon in
1012 journal = "Journal of Applied Physics",
1015 pages = "3815--3820",
1016 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1017 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1019 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1020 doi = "10.1063/1.354474",
1021 notes = "c at interstitial location for rt implantation in si",
1025 title = "Carbon incorporation into Si at high concentrations by
1026 ion implantation and solid phase epitaxy",
1027 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1028 Picraux and J. K. Watanabe and J. W. Mayer",
1029 journal = "J. Appl. Phys.",
1034 doi = "10.1063/1.360806",
1035 notes = "strained silicon, carbon supersaturation",
1038 @Article{laveant2002,
1039 title = "Epitaxy of carbon-rich silicon with {MBE}",
1040 journal = "Mater. Sci. Eng., B",
1046 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1047 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1048 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1050 notes = "low c in si, tensile stress to compensate compressive
1051 stress, avoid sic precipitation",
1055 title = "The formation of swirl defects in silicon by
1056 agglomeration of self-interstitials",
1057 journal = "Journal of Crystal Growth",
1064 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1065 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1066 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1067 notes = "b-swirl: si + c interstitial agglomerates, c-si
1072 title = "Microdefects in silicon and their relation to point
1074 journal = "Journal of Crystal Growth",
1081 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1082 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1083 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1084 notes = "swirl review",
1088 author = "P. Werner and S. Eichler and G. Mariani and R.
1089 K{\"{o}}gler and W. Skorupa",
1090 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1091 silicon by transmission electron microscopy",
1094 journal = "Appl. Phys. Lett.",
1098 keywords = "silicon; ion implantation; carbon; crystal defects;
1099 transmission electron microscopy; annealing; positron
1100 annihilation; secondary ion mass spectroscopy; buried
1101 layers; precipitation",
1102 URL = "http://link.aip.org/link/?APL/70/252/1",
1103 doi = "10.1063/1.118381",
1104 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1108 @InProceedings{werner96,
1109 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1111 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1112 International Conference on",
1113 title = "{TEM} investigation of {C}-Si defects in carbon
1120 doi = "10.1109/IIT.1996.586497",
1122 notes = "c-si agglomerates dumbbells",
1126 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1129 title = "Carbon diffusion in silicon",
1132 journal = "Appl. Phys. Lett.",
1135 pages = "2465--2467",
1136 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1137 secondary ion mass spectra; semiconductor epitaxial
1138 layers; annealing; impurity-defect interactions;
1139 impurity distribution",
1140 URL = "http://link.aip.org/link/?APL/73/2465/1",
1141 doi = "10.1063/1.122483",
1142 notes = "c diffusion in si, kick out mechnism",
1146 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1148 title = "Self-interstitial enhanced carbon diffusion in
1152 journal = "Applied Physics Letters",
1156 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1157 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1158 TEMPERATURE; IMPURITIES",
1159 URL = "http://link.aip.org/link/?APL/45/268/1",
1160 doi = "10.1063/1.95167",
1161 notes = "c diffusion due to si self-interstitials",
1165 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1168 title = "Characterization of SiGe/Si heterostructures formed by
1169 Ge[sup + ] and {C}[sup + ] implantation",
1172 journal = "Applied Physics Letters",
1175 pages = "2345--2347",
1176 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1177 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1178 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1179 EPITAXY; CARBON IONS; GERMANIUM IONS",
1180 URL = "http://link.aip.org/link/?APL/57/2345/1",
1181 doi = "10.1063/1.103888",
1185 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1186 Doyle and S. T. Picraux and J. W. Mayer",
1188 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1191 journal = "Applied Physics Letters",
1194 pages = "2786--2788",
1195 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1196 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1197 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1198 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1199 EPITAXY; AMORPHIZATION",
1200 URL = "http://link.aip.org/link/?APL/63/2786/1",
1201 doi = "10.1063/1.110334",
1205 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1206 Legoues and J. Angilello and F. Cardone",
1208 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1209 strained layer superlattices",
1212 journal = "Applied Physics Letters",
1215 pages = "2758--2760",
1216 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1217 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1218 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1219 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1220 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1221 URL = "http://link.aip.org/link/?APL/60/2758/1",
1222 doi = "10.1063/1.106868",
1226 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1227 Picraux and J. K. Watanabe and J. W. Mayer",
1229 title = "Precipitation and relaxation in strained Si[sub 1 -
1230 y]{C}[sub y]/Si heterostructures",
1233 journal = "J. Appl. Phys.",
1236 pages = "3656--3668",
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1240 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1241 precipitation by substitutional carbon, coherent prec,
1242 coherent to incoherent transition strain vs interface
1247 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1250 title = "Investigation of the high temperature behavior of
1251 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1254 journal = "J. Appl. Phys.",
1257 pages = "1934--1937",
1258 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1259 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1260 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1261 TEMPERATURE RANGE 04001000 K",
1262 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1263 doi = "10.1063/1.358826",
1267 title = "Prospects for device implementation of wide band gap
1269 author = "J. H. Edgar",
1270 journal = "J. Mater. Res.",
1275 doi = "10.1557/JMR.1992.0235",
1276 notes = "properties wide band gap semiconductor, sic
1280 @Article{zirkelbach2007,
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1341 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1342 Silicon Materials Research for Electronic and
1343 Photovoltaic Applications",
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1354 keywords = "Molecular dynamics simulations",
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1361 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1369 doi = "10.1103/PhysRevB.82.094110",
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1397 author = "J. K. N. Lindner and A. Frohnwieser and B.
1398 Rauschenbach and B. Stritzker",
1399 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1401 journal = "MRS Online Proceedings Library",
1406 doi = "10.1557/PROC-354-171",
1407 URL = "http://dx.doi.org/10.1557/PROC-354-171",
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1409 notes = "first time ibs at moderate temperatures",
1413 title = "Formation of buried epitaxial silicon carbide layers
1414 in silicon by ion beam synthesis",
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1424 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1425 Götz and A. Frohnwieser and B. Rauschenbach and B.
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1430 @Article{calcagno96,
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1433 journal = "Nuclear Instruments and Methods in Physics Research
1434 Section B: Beam Interactions with Materials and Atoms",
1439 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1440 New Trends in Ion Beam Processing of Materials",
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1444 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1445 Grimaldi and P. Musumeci",
1446 notes = "dose window, graphitic bonds",
1450 title = "Mechanisms of Si{C} Formation in the Ion Beam
1451 Synthesis of 3{C}-Si{C} Layers in Silicon",
1452 journal = "Materials Science Forum",
1457 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1458 URL = "http://www.scientific.net/MSF.264-268.215",
1459 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1460 notes = "intermediate temperature for sharp interface + good
1465 title = "Controlling the density distribution of Si{C}
1466 nanocrystals for the ion beam synthesis of buried Si{C}
1468 journal = "Nucl. Instrum. Methods Phys. Res. B",
1475 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1476 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1477 author = "J. K. N. Lindner and B. Stritzker",
1478 notes = "two-step implantation process",
1481 @Article{lindner99_2,
1482 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1484 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1491 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1492 author = "J. K. N. Lindner and B. Stritzker",
1493 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1497 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1498 Basic physical processes",
1499 journal = "Nucl. Instrum. Methods Phys. Res. B",
1506 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1507 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1508 author = "J{\"{o}}rg K. N. Lindner",
1512 title = "High-dose carbon implantations into silicon:
1513 fundamental studies for new technological tricks",
1514 author = "J. K. N. Lindner",
1515 journal = "Appl. Phys. A",
1519 doi = "10.1007/s00339-002-2062-8",
1520 notes = "ibs, burried sic layers",
1524 title = "On the balance between ion beam induced nanoparticle
1525 formation and displacive precipitate resolution in the
1527 journal = "Mater. Sci. Eng., C",
1532 note = "Current Trends in Nanoscience - from Materials to
1535 doi = "DOI: 10.1016/j.msec.2005.09.099",
1536 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1537 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1539 notes = "c int diffusion barrier",
1543 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1544 application in buffer layer for Ga{N} epitaxial
1546 journal = "Applied Surface Science",
1551 note = "APHYS'03 Special Issue",
1553 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1554 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1555 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1556 and S. Nishio and K. Yasuda and Y. Ishigami",
1557 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1560 @Article{yamamoto04,
1561 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1562 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1563 implantation into Si(1 1 1) substrate",
1564 journal = "Journal of Crystal Growth",
1569 note = "Proceedings of the 11th Biennial (US) Workshop on
1570 Organometallic Vapor Phase Epitaxy (OMVPE)",
1572 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1573 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1574 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1575 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1576 notes = "gan on 3c-sic",
1580 title = "Substrates for gallium nitride epitaxy",
1581 journal = "Materials Science and Engineering: R: Reports",
1588 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1589 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1590 author = "L. Liu and J. H. Edgar",
1591 notes = "gan substrates",
1594 @Article{takeuchi91,
1595 title = "Growth of single crystalline Ga{N} film on Si
1596 substrate using 3{C}-Si{C} as an intermediate layer",
1597 journal = "Journal of Crystal Growth",
1604 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1605 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1606 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1607 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1608 notes = "gan on 3c-sic (first time?)",
1612 author = "B. J. Alder and T. E. Wainwright",
1613 title = "Phase Transition for a Hard Sphere System",
1616 journal = "J. Chem. Phys.",
1619 pages = "1208--1209",
1620 URL = "http://link.aip.org/link/?JCP/27/1208/1",
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1625 author = "B. J. Alder and T. E. Wainwright",
1626 title = "Studies in Molecular Dynamics. {I}. General Method",
1629 journal = "J. Chem. Phys.",
1633 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1637 @Article{horsfield96,
1638 title = "Bond-order potentials: Theory and implementation",
1639 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1640 D. G. Pettifor and M. Aoki",
1641 journal = "Phys. Rev. B",
1644 pages = "12694--12712",
1648 doi = "10.1103/PhysRevB.53.12694",
1649 publisher = "American Physical Society",
1653 title = "Empirical chemical pseudopotential theory of molecular
1654 and metallic bonding",
1655 author = "G. C. Abell",
1656 journal = "Phys. Rev. B",
1659 pages = "6184--6196",
1663 doi = "10.1103/PhysRevB.31.6184",
1664 publisher = "American Physical Society",
1667 @Article{tersoff_si1,
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1670 author = "J. Tersoff",
1671 journal = "Phys. Rev. Lett.",
1678 doi = "10.1103/PhysRevLett.56.632",
1679 publisher = "American Physical Society",
1683 title = "Development of a many-body Tersoff-type potential for
1685 author = "Brian W. Dodson",
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1697 @Article{tersoff_si2,
1698 title = "New empirical approach for the structure and energy of
1700 author = "J. Tersoff",
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1713 title = "Empirical interatomic potential for silicon with
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1719 pages = "9902--9905",
1723 doi = "10.1103/PhysRevB.38.9902",
1724 publisher = "American Physical Society",
1728 title = "Empirical Interatomic Potential for Carbon, with
1729 Applications to Amorphous Carbon",
1730 author = "J. Tersoff",
1731 journal = "Phys. Rev. Lett.",
1734 pages = "2879--2882",
1738 doi = "10.1103/PhysRevLett.61.2879",
1739 publisher = "American Physical Society",
1743 title = "Modeling solid-state chemistry: Interatomic potentials
1744 for multicomponent systems",
1745 author = "J. Tersoff",
1746 journal = "Phys. Rev. B",
1749 pages = "5566--5568",
1753 doi = "10.1103/PhysRevB.39.5566",
1754 publisher = "American Physical Society",
1758 title = "Carbon defects and defect reactions in silicon",
1759 author = "J. Tersoff",
1760 journal = "Phys. Rev. Lett.",
1763 pages = "1757--1760",
1767 doi = "10.1103/PhysRevLett.64.1757",
1768 publisher = "American Physical Society",
1772 title = "Point defects and dopant diffusion in silicon",
1773 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1774 journal = "Rev. Mod. Phys.",
1781 doi = "10.1103/RevModPhys.61.289",
1782 publisher = "American Physical Society",
1786 title = "Silicon carbide: synthesis and processing",
1787 journal = "Nucl. Instrum. Methods Phys. Res. B",
1792 note = "Radiation Effects in Insulators",
1794 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1800 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1801 Palmour and J. A. Edmond",
1802 journal = "Proceedings of the IEEE",
1803 title = "Thin film deposition and microelectronic and
1804 optoelectronic device fabrication and characterization
1805 in monocrystalline alpha and beta silicon carbide",
1811 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1812 diode;SiC;dry etching;electrical
1813 contacts;etching;impurity incorporation;optoelectronic
1814 device fabrication;solid-state devices;surface
1815 chemistry;Schottky effect;Schottky gate field effect
1816 transistors;Schottky-barrier
1817 diodes;etching;heterojunction bipolar
1818 transistors;insulated gate field effect
1819 transistors;light emitting diodes;semiconductor
1820 materials;semiconductor thin films;silicon compounds;",
1821 doi = "10.1109/5.90132",
1823 notes = "sic growth methods",
1827 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1828 Lin and B. Sverdlov and M. Burns",
1830 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1831 ZnSe-based semiconductor device technologies",
1834 journal = "J. Appl. Phys.",
1837 pages = "1363--1398",
1838 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1839 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1840 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1842 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1843 doi = "10.1063/1.358463",
1844 notes = "sic intro, properties",
1848 author = "Noch Unbekannt",
1849 title = "How to find references",
1850 journal = "Journal of Applied References",
1857 title = "Atomistic simulation of thermomechanical properties of
1859 author = "Meijie Tang and Sidney Yip",
1860 journal = "Phys. Rev. B",
1863 pages = "15150--15159",
1866 doi = "10.1103/PhysRevB.52.15150",
1867 notes = "modified tersoff, scale cutoff with volume, promising
1868 tersoff reparametrization",
1869 publisher = "American Physical Society",
1873 title = "Silicon carbide as a new {MEMS} technology",
1874 journal = "Sensors and Actuators A: Physical",
1880 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1881 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1882 author = "Pasqualina M. Sarro",
1884 keywords = "Silicon carbide",
1885 keywords = "Micromachining",
1886 keywords = "Mechanical stress",
1890 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1891 semiconductor for high-temperature applications: {A}
1893 journal = "Solid-State Electronics",
1896 pages = "1409--1422",
1899 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1900 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1901 author = "J. B. Casady and R. W. Johnson",
1902 notes = "sic intro",
1905 @Article{giancarli98,
1906 title = "Design requirements for Si{C}/Si{C} composites
1907 structural material in fusion power reactor blankets",
1908 journal = "Fusion Engineering and Design",
1914 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1915 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1916 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1917 Marois and N. B. Morley and J. F. Salavy",
1921 title = "Electrical and optical characterization of Si{C}",
1922 journal = "Physica B: Condensed Matter",
1928 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1929 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1930 author = "G. Pensl and W. J. Choyke",
1934 title = "Investigation of growth processes of ingots of silicon
1935 carbide single crystals",
1936 journal = "J. Cryst. Growth",
1941 notes = "modified lely process",
1943 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1944 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1945 author = "Yu. M. Tairov and V. F. Tsvetkov",
1949 title = "General principles of growing large-size single
1950 crystals of various silicon carbide polytypes",
1951 journal = "Journal of Crystal Growth",
1958 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1959 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1960 author = "Yu.M. Tairov and V. F. Tsvetkov",
1964 title = "Si{C} boule growth by sublimation vapor transport",
1965 journal = "Journal of Crystal Growth",
1972 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1973 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1974 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1975 R. H. Hopkins and W. J. Choyke",
1979 title = "Growth of large Si{C} single crystals",
1980 journal = "Journal of Crystal Growth",
1987 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1988 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1989 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1990 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1995 title = "Control of polytype formation by surface energy
1996 effects during the growth of Si{C} monocrystals by the
1997 sublimation method",
1998 journal = "Journal of Crystal Growth",
2005 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2006 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2007 author = "R. A. Stein and P. Lanig",
2008 notes = "6h and 4h, sublimation technique",
2012 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2015 title = "Production of large-area single-crystal wafers of
2016 cubic Si{C} for semiconductor devices",
2019 journal = "Appl. Phys. Lett.",
2023 keywords = "silicon carbides; layers; chemical vapor deposition;
2025 URL = "http://link.aip.org/link/?APL/42/460/1",
2026 doi = "10.1063/1.93970",
2027 notes = "cvd of 3c-sic on si, sic buffer layer",
2031 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2032 and Hiroyuki Matsunami",
2034 title = "Epitaxial growth and electric characteristics of cubic
2038 journal = "J. Appl. Phys.",
2041 pages = "4889--4893",
2042 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2043 doi = "10.1063/1.338355",
2044 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2049 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2051 title = "Growth and Characterization of Cubic Si{C}
2052 Single-Crystal Films on Si",
2055 journal = "Journal of The Electrochemical Society",
2058 pages = "1558--1565",
2059 keywords = "semiconductor materials; silicon compounds; carbon
2060 compounds; crystal morphology; electron mobility",
2061 URL = "http://link.aip.org/link/?JES/134/1558/1",
2062 doi = "10.1149/1.2100708",
2063 notes = "blue light emitting diodes (led)",
2066 @Article{powell87_2,
2067 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2068 C. M. Chorey and T. T. Cheng and P. Pirouz",
2070 title = "Improved beta-Si{C} heteroepitaxial films using
2071 off-axis Si substrates",
2074 journal = "Applied Physics Letters",
2078 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2079 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2080 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2081 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2082 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2083 URL = "http://link.aip.org/link/?APL/51/823/1",
2084 doi = "10.1063/1.98824",
2085 notes = "improved sic on off-axis si substrates, reduced apbs",
2089 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2090 journal = "Journal of Crystal Growth",
2097 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2098 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2099 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2101 notes = "step-controlled epitaxy model",
2105 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2106 and Hiroyuki Matsunami",
2107 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2111 journal = "J. Appl. Phys.",
2115 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2116 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2118 URL = "http://link.aip.org/link/?JAP/73/726/1",
2119 doi = "10.1063/1.353329",
2120 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2123 @Article{powell90_2,
2124 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2125 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2126 Yoganathan and J. Yang and P. Pirouz",
2128 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2129 vicinal (0001) 6{H}-Si{C} wafers",
2132 journal = "Applied Physics Letters",
2135 pages = "1442--1444",
2136 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2137 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2138 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2139 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2140 URL = "http://link.aip.org/link/?APL/56/1442/1",
2141 doi = "10.1063/1.102492",
2142 notes = "cvd of 6h-sic on 6h-sic",
2146 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2148 title = "Chemical vapor deposition and characterization of
2149 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2153 journal = "Journal of Applied Physics",
2156 pages = "2672--2679",
2157 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2158 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2159 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2160 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2161 PHASE EPITAXY; CRYSTAL ORIENTATION",
2162 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2163 doi = "10.1063/1.341608",
2167 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2168 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2169 Yoganathan and J. Yang and P. Pirouz",
2171 title = "Growth of improved quality 3{C}-Si{C} films on
2172 6{H}-Si{C} substrates",
2175 journal = "Appl. Phys. Lett.",
2178 pages = "1353--1355",
2179 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2180 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2181 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2183 URL = "http://link.aip.org/link/?APL/56/1353/1",
2184 doi = "10.1063/1.102512",
2185 notes = "cvd of 3c-sic on 6h-sic",
2189 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2190 Rozgonyi and K. L. More",
2192 title = "An examination of double positioning boundaries and
2193 interface misfit in beta-Si{C} films on alpha-Si{C}
2197 journal = "Journal of Applied Physics",
2200 pages = "2645--2650",
2201 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2202 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2203 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2204 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2205 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2206 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2207 doi = "10.1063/1.341004",
2211 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2212 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2213 and W. J. Choyke and L. Clemen and M. Yoganathan",
2215 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2216 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2219 journal = "Applied Physics Letters",
2223 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2224 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2225 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2226 URL = "http://link.aip.org/link/?APL/59/333/1",
2227 doi = "10.1063/1.105587",
2231 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2232 Thokala and M. J. Loboda",
2234 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2235 films on 6{H}-Si{C} by chemical vapor deposition from
2239 journal = "J. Appl. Phys.",
2242 pages = "1271--1273",
2243 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2244 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2246 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2247 doi = "10.1063/1.360368",
2248 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2252 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2253 properties of its p-n junction",
2254 journal = "Journal of Crystal Growth",
2261 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2262 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2263 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2265 notes = "first time ssmbe of 3c-sic on 6h-sic",
2269 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2270 [alpha]-Si{C}(0001) at low temperatures by solid-source
2271 molecular beam epitaxy",
2272 journal = "J. Cryst. Growth",
2278 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2279 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2280 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2281 Schr{\"{o}}ter and W. Richter",
2282 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2285 @Article{fissel95_apl,
2286 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2288 title = "Low-temperature growth of Si{C} thin films on Si and
2289 6{H}--Si{C} by solid-source molecular beam epitaxy",
2292 journal = "Appl. Phys. Lett.",
2295 pages = "3182--3184",
2296 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2298 URL = "http://link.aip.org/link/?APL/66/3182/1",
2299 doi = "10.1063/1.113716",
2300 notes = "mbe 3c-sic on si and 6h-sic",
2304 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2305 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2307 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2308 migration enhanced epitaxy controlled to an atomic
2309 level using surface superstructures",
2312 journal = "Applied Physics Letters",
2315 pages = "1204--1206",
2316 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2317 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2319 URL = "http://link.aip.org/link/?APL/68/1204/1",
2320 doi = "10.1063/1.115969",
2321 notes = "ss mbe sic, superstructure, reconstruction",
2325 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2326 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2327 C. M. Bertoni and A. Catellani",
2328 journal = "Phys. Rev. Lett.",
2335 doi = "10.1103/PhysRevLett.91.136101",
2336 publisher = "American Physical Society",
2337 notes = "dft calculations mbe sic growth",
2341 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2343 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2347 journal = "Appl. Phys. Lett.",
2351 URL = "http://link.aip.org/link/?APL/18/509/1",
2352 doi = "10.1063/1.1653516",
2353 notes = "first time sic by ibs, follow cites for precipitation
2358 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2359 and E. V. Lubopytova",
2360 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2361 by ion implantation",
2362 publisher = "Taylor \& Francis",
2364 journal = "Radiation Effects",
2368 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2369 notes = "3c-sic for different temperatures, amorphous, poly,
2370 single crystalline",
2373 @Article{akimchenko80,
2374 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2375 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2376 title = "Structure and optical properties of silicon implanted
2377 by high doses of 70 and 310 ke{V} carbon ions",
2378 publisher = "Taylor \& Francis",
2380 journal = "Radiation Effects",
2384 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2385 notes = "3c-sic nucleation by thermal spikes",
2389 title = "Structure and annealing properties of silicon carbide
2390 thin layers formed by implantation of carbon ions in
2392 journal = "Thin Solid Films",
2399 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2400 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2401 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2406 title = "Characteristics of the synthesis of [beta]-Si{C} by
2407 the implantation of carbon ions into silicon",
2408 journal = "Thin Solid Films",
2415 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2416 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2417 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2422 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2423 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2424 Chater and J. A. Iulner and J. Davis",
2425 title = "Formation mechanisms and structures of insulating
2426 compounds formed in silicon by ion beam synthesis",
2427 publisher = "Taylor \& Francis",
2429 journal = "Radiation Effects",
2433 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2434 notes = "ibs, comparison with sio and sin, higher temp or time,
2435 no c redistribution",
2439 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2440 J. Davis and G. E. Celler",
2442 title = "Formation of buried layers of beta-Si{C} using ion
2443 beam synthesis and incoherent lamp annealing",
2446 journal = "Appl. Phys. Lett.",
2449 pages = "2242--2244",
2450 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2451 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2452 URL = "http://link.aip.org/link/?APL/51/2242/1",
2453 doi = "10.1063/1.98953",
2454 notes = "nice tem images, sic by ibs",
2458 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2459 and M. Olivier and A. M. Papon and G. Rolland",
2461 title = "High-temperature ion beam synthesis of cubic Si{C}",
2464 journal = "Journal of Applied Physics",
2467 pages = "2908--2912",
2468 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2469 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2470 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2471 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2472 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2473 REACTIONS; MONOCRYSTALS",
2474 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2475 doi = "10.1063/1.346092",
2476 notes = "triple energy implantation to overcome high annealing
2481 author = "R. I. Scace and G. A. Slack",
2483 title = "Solubility of Carbon in Silicon and Germanium",
2486 journal = "J. Chem. Phys.",
2489 pages = "1551--1555",
2490 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2491 doi = "10.1063/1.1730236",
2492 notes = "solubility of c in c-si, si-c phase diagram",
2496 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2498 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2499 Laboratories Eindhoven Netherlands Eindhoven
2501 title = "Boron implantations in silicon: {A} comparison of
2502 charge carrier and boron concentration profiles",
2503 journal = "Applied Physics A: Materials Science \& Processing",
2504 publisher = "Springer Berlin / Heidelberg",
2506 keyword = "Physics and Astronomy",
2510 URL = "http://dx.doi.org/10.1007/BF00884267",
2511 note = "10.1007/BF00884267",
2513 notes = "first time ted (only for boron?)",
2517 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2520 title = "Rapid annealing and the anomalous diffusion of ion
2521 implanted boron into silicon",
2524 journal = "Applied Physics Letters",
2528 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2529 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2530 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2531 URL = "http://link.aip.org/link/?APL/50/416/1",
2532 doi = "10.1063/1.98160",
2533 notes = "ted of boron in si",
2537 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2540 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2541 time, and matrix dependence of atomic and electrical
2545 journal = "Journal of Applied Physics",
2548 pages = "6191--6198",
2549 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2550 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2551 CRYSTALS; AMORPHIZATION",
2552 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2553 doi = "10.1063/1.346910",
2554 notes = "ted of boron in si",
2558 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2559 F. W. Saris and W. Vandervorst",
2561 title = "Role of {C} and {B} clusters in transient diffusion of
2565 journal = "Appl. Phys. Lett.",
2568 pages = "1150--1152",
2569 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2570 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2572 URL = "http://link.aip.org/link/?APL/68/1150/1",
2573 doi = "10.1063/1.115706",
2574 notes = "suppression of transient enhanced diffusion (ted)",
2578 title = "Implantation and transient boron diffusion: the role
2579 of the silicon self-interstitial",
2580 journal = "Nucl. Instrum. Methods Phys. Res. B",
2585 note = "Selected Papers of the Tenth International Conference
2586 on Ion Implantation Technology (IIT '94)",
2588 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2589 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2590 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2595 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2596 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2597 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2600 title = "Physical mechanisms of transient enhanced dopant
2601 diffusion in ion-implanted silicon",
2604 journal = "J. Appl. Phys.",
2607 pages = "6031--6050",
2608 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2609 doi = "10.1063/1.364452",
2610 notes = "ted, transient enhanced diffusion, c silicon trap",
2614 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2616 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2617 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2620 journal = "Appl. Phys. Lett.",
2624 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2625 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2626 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2628 URL = "http://link.aip.org/link/?APL/64/324/1",
2629 doi = "10.1063/1.111195",
2630 notes = "beta sic nano crystals in si, mbe, annealing",
2634 author = "Richard A. Soref",
2636 title = "Optical band gap of the ternary semiconductor Si[sub 1
2637 - x - y]Ge[sub x]{C}[sub y]",
2640 journal = "J. Appl. Phys.",
2643 pages = "2470--2472",
2644 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2645 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2647 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2648 doi = "10.1063/1.349403",
2649 notes = "band gap of strained si by c",
2653 author = "E Kasper",
2654 title = "Superlattices of group {IV} elements, a new
2655 possibility to produce direct band gap material",
2656 journal = "Physica Scripta",
2659 URL = "http://stacks.iop.org/1402-4896/T35/232",
2661 notes = "superlattices, convert indirect band gap into a
2666 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2669 title = "Growth and strain compensation effects in the ternary
2670 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2673 journal = "Applied Physics Letters",
2676 pages = "3033--3035",
2677 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2678 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2679 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2680 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2682 URL = "http://link.aip.org/link/?APL/60/3033/1",
2683 doi = "10.1063/1.106774",
2687 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2690 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2694 journal = "J. Vac. Sci. Technol. B",
2697 pages = "1064--1068",
2698 location = "Ottawa (Canada)",
2699 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2700 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2701 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2702 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2703 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2704 doi = "10.1116/1.587008",
2705 notes = "substitutional c in si by mbe",
2708 @Article{powell93_2,
2709 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2710 of the ternary system",
2711 journal = "Journal of Crystal Growth",
2718 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2719 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2720 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2725 author = "H. J. Osten",
2726 title = "Modification of Growth Modes in Lattice-Mismatched
2727 Epitaxial Systems: Si/Ge",
2728 journal = "physica status solidi (a)",
2731 publisher = "WILEY-VCH Verlag",
2733 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2734 doi = "10.1002/pssa.2211450203",
2739 @Article{dietrich94,
2740 title = "Lattice distortion in a strain-compensated
2741 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2742 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2743 Methfessel and P. Zaumseil",
2744 journal = "Phys. Rev. B",
2747 pages = "17185--17190",
2751 doi = "10.1103/PhysRevB.49.17185",
2752 publisher = "American Physical Society",
2756 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2758 title = "Growth of an inverse tetragonal distorted SiGe layer
2759 on Si(001) by adding small amounts of carbon",
2762 journal = "Applied Physics Letters",
2765 pages = "3440--3442",
2766 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2767 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2768 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2770 URL = "http://link.aip.org/link/?APL/64/3440/1",
2771 doi = "10.1063/1.111235",
2772 notes = "inversely strained / distorted heterostructure",
2776 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2777 LeGoues and J. C. Tsang and F. Cardone",
2779 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2780 molecular beam epitaxy",
2783 journal = "Applied Physics Letters",
2787 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2788 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2789 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2790 FILM GROWTH; MICROSTRUCTURE",
2791 URL = "http://link.aip.org/link/?APL/60/356/1",
2792 doi = "10.1063/1.106655",
2796 author = "H. J. Osten and J. Griesche and S. Scalese",
2798 title = "Substitutional carbon incorporation in epitaxial
2799 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2800 molecular beam epitaxy",
2803 journal = "Appl. Phys. Lett.",
2807 keywords = "molecular beam epitaxial growth; semiconductor growth;
2808 wide band gap semiconductors; interstitials; silicon
2810 URL = "http://link.aip.org/link/?APL/74/836/1",
2811 doi = "10.1063/1.123384",
2812 notes = "substitutional c in si by mbe",
2815 @Article{hohenberg64,
2816 title = "Inhomogeneous Electron Gas",
2817 author = "P. Hohenberg and W. Kohn",
2818 journal = "Phys. Rev.",
2821 pages = "B864--B871",
2825 doi = "10.1103/PhysRev.136.B864",
2826 publisher = "American Physical Society",
2827 notes = "density functional theory, dft",
2831 title = "Self-Consistent Equations Including Exchange and
2832 Correlation Effects",
2833 author = "W. Kohn and L. J. Sham",
2834 journal = "Phys. Rev.",
2837 pages = "A1133--A1138",
2841 doi = "10.1103/PhysRev.140.A1133",
2842 publisher = "American Physical Society",
2843 notes = "dft, exchange and correlation",
2847 title = "Strain-stabilized highly concentrated pseudomorphic
2848 $Si1-x$$Cx$ layers in Si",
2849 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2851 journal = "Phys. Rev. Lett.",
2854 pages = "3578--3581",
2858 doi = "10.1103/PhysRevLett.72.3578",
2859 publisher = "American Physical Society",
2860 notes = "high c concentration in si, heterostructure, strained
2865 title = "Phosphorous Doping of Strain-Induced
2866 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2867 by Low-Temperature Chemical Vapor Deposition",
2868 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2869 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2870 journal = "Japanese Journal of Applied Physics",
2872 number = "Part 1, No. 4B",
2873 pages = "2472--2475",
2876 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2877 doi = "10.1143/JJAP.41.2472",
2878 publisher = "The Japan Society of Applied Physics",
2879 notes = "experimental charge carrier mobility in strained si",
2883 title = "Electron Transport Model for Strained Silicon-Carbon
2885 author = "Shu-Tong Chang and Chung-Yi Lin",
2886 journal = "Japanese J. Appl. Phys.",
2889 pages = "2257--2262",
2892 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2893 doi = "10.1143/JJAP.44.2257",
2894 publisher = "The Japan Society of Applied Physics",
2895 notes = "enhance of electron mobility in strained si",
2898 @Article{kissinger94,
2899 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2902 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2903 y] layers on Si(001)",
2906 journal = "Applied Physics Letters",
2909 pages = "3356--3358",
2910 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2911 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2912 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2913 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2914 URL = "http://link.aip.org/link/?APL/65/3356/1",
2915 doi = "10.1063/1.112390",
2916 notes = "strained si influence on optical properties",
2920 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2923 title = "Substitutional versus interstitial carbon
2924 incorporation during pseudomorphic growth of Si[sub 1 -
2925 y]{C}[sub y] on Si(001)",
2928 journal = "Journal of Applied Physics",
2931 pages = "6711--6715",
2932 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2933 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2935 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2936 doi = "10.1063/1.363797",
2937 notes = "mbe substitutional vs interstitial c incorporation",
2941 author = "H. J. Osten and P. Gaworzewski",
2943 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2944 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2948 journal = "J. Appl. Phys.",
2951 pages = "4977--4981",
2952 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2953 semiconductors; semiconductor epitaxial layers; carrier
2954 density; Hall mobility; interstitials; defect states",
2955 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2956 doi = "10.1063/1.366364",
2957 notes = "charge transport in strained si",
2961 title = "Carbon-mediated aggregation of self-interstitials in
2962 silicon: {A} large-scale molecular dynamics study",
2963 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2964 journal = "Phys. Rev. B",
2971 doi = "10.1103/PhysRevB.69.155214",
2972 publisher = "American Physical Society",
2973 notes = "simulation using promising tersoff reparametrization",
2977 title = "Event-Based Relaxation of Continuous Disordered
2979 author = "G. T. Barkema and Normand Mousseau",
2980 journal = "Phys. Rev. Lett.",
2983 pages = "4358--4361",
2987 doi = "10.1103/PhysRevLett.77.4358",
2988 publisher = "American Physical Society",
2989 notes = "activation relaxation technique, art, speed up slow
2994 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2995 Minoukadeh and F. Willaime",
2997 title = "Some improvements of the activation-relaxation
2998 technique method for finding transition pathways on
2999 potential energy surfaces",
3002 journal = "J. Chem. Phys.",
3008 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3009 surfaces; vacancies (crystal)",
3010 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3011 doi = "10.1063/1.3088532",
3012 notes = "improvements to art, refs for methods to find
3013 transition pathways",
3016 @Article{parrinello81,
3017 author = "M. Parrinello and A. Rahman",
3019 title = "Polymorphic transitions in single crystals: {A} new
3020 molecular dynamics method",
3023 journal = "J. Appl. Phys.",
3026 pages = "7182--7190",
3027 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3028 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3029 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3030 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3031 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3033 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3034 doi = "10.1063/1.328693",
3037 @Article{stillinger85,
3038 title = "Computer simulation of local order in condensed phases
3040 author = "Frank H. Stillinger and Thomas A. Weber",
3041 journal = "Phys. Rev. B",
3044 pages = "5262--5271",
3048 doi = "10.1103/PhysRevB.31.5262",
3049 publisher = "American Physical Society",
3053 title = "Empirical potential for hydrocarbons for use in
3054 simulating the chemical vapor deposition of diamond
3056 author = "Donald W. Brenner",
3057 journal = "Phys. Rev. B",
3060 pages = "9458--9471",
3064 doi = "10.1103/PhysRevB.42.9458",
3065 publisher = "American Physical Society",
3066 notes = "brenner hydro carbons",
3070 title = "Modeling of Covalent Bonding in Solids by Inversion of
3071 Cohesive Energy Curves",
3072 author = "Martin Z. Bazant and Efthimios Kaxiras",
3073 journal = "Phys. Rev. Lett.",
3076 pages = "4370--4373",
3080 doi = "10.1103/PhysRevLett.77.4370",
3081 publisher = "American Physical Society",
3082 notes = "first si edip",
3086 title = "Environment-dependent interatomic potential for bulk
3088 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3090 journal = "Phys. Rev. B",
3093 pages = "8542--8552",
3097 doi = "10.1103/PhysRevB.56.8542",
3098 publisher = "American Physical Society",
3099 notes = "second si edip",
3103 title = "Interatomic potential for silicon defects and
3105 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3106 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3107 journal = "Phys. Rev. B",
3110 pages = "2539--2550",
3114 doi = "10.1103/PhysRevB.58.2539",
3115 publisher = "American Physical Society",
3116 notes = "latest si edip, good dislocation explanation",
3120 title = "{PARCAS} molecular dynamics code",
3121 author = "K. Nordlund",
3126 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3128 author = "Arthur F. Voter",
3129 journal = "Phys. Rev. Lett.",
3132 pages = "3908--3911",
3136 doi = "10.1103/PhysRevLett.78.3908",
3137 publisher = "American Physical Society",
3138 notes = "hyperdynamics, accelerated md",
3142 author = "Arthur F. Voter",
3144 title = "A method for accelerating the molecular dynamics
3145 simulation of infrequent events",
3148 journal = "J. Chem. Phys.",
3151 pages = "4665--4677",
3152 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3153 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3154 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3155 energy functions; surface diffusion; reaction kinetics
3156 theory; potential energy surfaces",
3157 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3158 doi = "10.1063/1.473503",
3159 notes = "improved hyperdynamics md",
3162 @Article{sorensen2000,
3163 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3165 title = "Temperature-accelerated dynamics for simulation of
3169 journal = "J. Chem. Phys.",
3172 pages = "9599--9606",
3173 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3174 MOLECULAR DYNAMICS METHOD; surface diffusion",
3175 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3176 doi = "10.1063/1.481576",
3177 notes = "temperature accelerated dynamics, tad",
3181 title = "Parallel replica method for dynamics of infrequent
3183 author = "Arthur F. Voter",
3184 journal = "Phys. Rev. B",
3187 pages = "R13985--R13988",
3191 doi = "10.1103/PhysRevB.57.R13985",
3192 publisher = "American Physical Society",
3193 notes = "parallel replica method, accelerated md",
3197 author = "Xiongwu Wu and Shaomeng Wang",
3199 title = "Enhancing systematic motion in molecular dynamics
3203 journal = "J. Chem. Phys.",
3206 pages = "9401--9410",
3207 keywords = "molecular dynamics method; argon; Lennard-Jones
3208 potential; crystallisation; liquid theory",
3209 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3210 doi = "10.1063/1.478948",
3211 notes = "self guided md, sgmd, accelerated md, enhancing
3215 @Article{choudhary05,
3216 author = "Devashish Choudhary and Paulette Clancy",
3218 title = "Application of accelerated molecular dynamics schemes
3219 to the production of amorphous silicon",
3222 journal = "J. Chem. Phys.",
3228 keywords = "molecular dynamics method; silicon; glass structure;
3229 amorphous semiconductors",
3230 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3231 doi = "10.1063/1.1878733",
3232 notes = "explanation of sgmd and hyper md, applied to amorphous
3237 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3239 title = "Carbon precipitation in silicon: Why is it so
3243 journal = "Appl. Phys. Lett.",
3246 pages = "3336--3338",
3247 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3248 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3250 URL = "http://link.aip.org/link/?APL/62/3336/1",
3251 doi = "10.1063/1.109063",
3252 notes = "interfacial energy of cubic sic and si, si self
3253 interstitials necessary for precipitation, volume
3254 decrease, high interface energy",
3257 @Article{chaussende08,
3258 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3259 journal = "J. Cryst. Growth",
3264 note = "Proceedings of the E-MRS Conference, Symposium G -
3265 Substrates of Wide Bandgap Materials",
3267 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3268 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3269 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3270 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3271 and A. Andreadou and E. K. Polychroniadis and C.
3272 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3273 notes = "3c-sic crystal growth, sic fabrication + links,
3277 @Article{chaussende07,
3278 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3279 title = "Status of Si{C} bulk growth processes",
3280 journal = "Journal of Physics D: Applied Physics",
3284 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3286 notes = "review of sic single crystal growth methods, process
3291 title = "Forces in Molecules",
3292 author = "R. P. Feynman",
3293 journal = "Phys. Rev.",
3300 doi = "10.1103/PhysRev.56.340",
3301 publisher = "American Physical Society",
3302 notes = "hellmann feynman forces",
3306 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3307 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3308 their Contrasting Properties",
3309 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3311 journal = "Phys. Rev. Lett.",
3318 doi = "10.1103/PhysRevLett.84.943",
3319 publisher = "American Physical Society",
3320 notes = "si sio2 and sic sio2 interface",
3323 @Article{djurabekova08,
3324 title = "Atomistic simulation of the interface structure of Si
3325 nanocrystals embedded in amorphous silica",
3326 author = "Flyura Djurabekova and Kai Nordlund",
3327 journal = "Phys. Rev. B",
3334 doi = "10.1103/PhysRevB.77.115325",
3335 publisher = "American Physical Society",
3336 notes = "nc-si in sio2, interface energy, nc construction,
3337 angular distribution, coordination",
3341 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3342 W. Liang and J. Zou",
3344 title = "Nature of interfacial defects and their roles in
3345 strain relaxation at highly lattice mismatched
3346 3{C}-Si{C}/Si (001) interface",
3349 journal = "J. Appl. Phys.",
3355 keywords = "anelastic relaxation; crystal structure; dislocations;
3356 elemental semiconductors; semiconductor growth;
3357 semiconductor thin films; silicon; silicon compounds;
3358 stacking faults; wide band gap semiconductors",
3359 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3360 doi = "10.1063/1.3234380",
3361 notes = "sic/si interface, follow refs, tem image
3362 deconvolution, dislocation defects",
3365 @Article{kitabatake93,
3366 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3369 title = "Simulations and experiments of Si{C} heteroepitaxial
3370 growth on Si(001) surface",
3373 journal = "J. Appl. Phys.",
3376 pages = "4438--4445",
3377 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3378 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3379 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3380 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3381 doi = "10.1063/1.354385",
3382 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3386 @Article{kitabatake97,
3387 author = "Makoto Kitabatake",
3388 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3389 Heteroepitaxial Growth",
3390 publisher = "WILEY-VCH Verlag",
3392 journal = "physica status solidi (b)",
3395 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3396 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3397 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3401 title = "Strain relaxation and thermal stability of the
3402 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3404 journal = "Thin Solid Films",
3411 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3412 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3413 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3414 keywords = "Strain relaxation",
3415 keywords = "Interfaces",
3416 keywords = "Thermal stability",
3417 keywords = "Molecular dynamics",
3418 notes = "tersoff sic/si interface study",
3422 title = "Ab initio Study of Misfit Dislocations at the
3423 $Si{C}/Si(001)$ Interface",
3424 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3426 journal = "Phys. Rev. Lett.",
3433 doi = "10.1103/PhysRevLett.89.156101",
3434 publisher = "American Physical Society",
3435 notes = "sic/si interface study",
3438 @Article{pizzagalli03,
3439 title = "Theoretical investigations of a highly mismatched
3440 interface: Si{C}/Si(001)",
3441 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3443 journal = "Phys. Rev. B",
3450 doi = "10.1103/PhysRevB.68.195302",
3451 publisher = "American Physical Society",
3452 notes = "tersoff md and ab initio sic/si interface study",
3456 title = "Atomic configurations of dislocation core and twin
3457 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3458 electron microscopy",
3459 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3460 H. Zheng and J. W. Liang",
3461 journal = "Phys. Rev. B",
3468 doi = "10.1103/PhysRevB.75.184103",
3469 publisher = "American Physical Society",
3470 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3474 @Article{hornstra58,
3475 title = "Dislocations in the diamond lattice",
3476 journal = "Journal of Physics and Chemistry of Solids",
3483 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3484 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3485 author = "J. Hornstra",
3486 notes = "dislocations in diamond lattice",
3490 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3491 Ion `Hot' Implantation",
3492 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3493 Hirao and Naoki Arai and Tomio Izumi",
3494 journal = "Japanese J. Appl. Phys.",
3496 number = "Part 1, No. 2A",
3500 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3501 doi = "10.1143/JJAP.31.343",
3502 publisher = "The Japan Society of Applied Physics",
3503 notes = "c-c bonds in c implanted si, hot implantation
3504 efficiency, c-c hard to break by thermal annealing",
3507 @Article{eichhorn99,
3508 author = "F. Eichhorn and N. Schell and W. Matz and R.
3511 title = "Strain and Si{C} particle formation in silicon
3512 implanted with carbon ions of medium fluence studied by
3513 synchrotron x-ray diffraction",
3516 journal = "J. Appl. Phys.",
3519 pages = "4184--4187",
3520 keywords = "silicon; carbon; elemental semiconductors; chemical
3521 interdiffusion; ion implantation; X-ray diffraction;
3522 precipitation; semiconductor doping",
3523 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3524 doi = "10.1063/1.371344",
3525 notes = "sic conversion by ibs, detected substitutional carbon,
3526 expansion of si lattice",
3529 @Article{eichhorn02,
3530 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3531 Metzger and W. Matz and R. K{\"{o}}gler",
3533 title = "Structural relation between Si and Si{C} formed by
3534 carbon ion implantation",
3537 journal = "J. Appl. Phys.",
3540 pages = "1287--1292",
3541 keywords = "silicon compounds; wide band gap semiconductors; ion
3542 implantation; annealing; X-ray scattering; transmission
3543 electron microscopy",
3544 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3545 doi = "10.1063/1.1428105",
3546 notes = "3c-sic alignement to si host in ibs depending on
3547 temperature, might explain c into c sub trafo",
3551 author = "G Lucas and M Bertolus and L Pizzagalli",
3552 title = "An environment-dependent interatomic potential for
3553 silicon carbide: calculation of bulk properties,
3554 high-pressure phases, point and extended defects, and
3555 amorphous structures",
3556 journal = "J. Phys.: Condens. Matter",
3560 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3566 author = "J Godet and L Pizzagalli and S Brochard and P
3568 title = "Comparison between classical potentials and ab initio
3569 methods for silicon under large shear",
3570 journal = "J. Phys.: Condens. Matter",
3574 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3576 notes = "comparison of empirical potentials, stillinger weber,
3577 edip, tersoff, ab initio",
3580 @Article{moriguchi98,
3581 title = "Verification of Tersoff's Potential for Static
3582 Structural Analysis of Solids of Group-{IV} Elements",
3583 author = "Koji Moriguchi and Akira Shintani",
3584 journal = "Japanese J. Appl. Phys.",
3586 number = "Part 1, No. 2",
3590 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3591 doi = "10.1143/JJAP.37.414",
3592 publisher = "The Japan Society of Applied Physics",
3593 notes = "tersoff stringent test",
3596 @Article{mazzarolo01,
3597 title = "Low-energy recoils in crystalline silicon: Quantum
3599 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3600 Lulli and Eros Albertazzi",
3601 journal = "Phys. Rev. B",
3608 doi = "10.1103/PhysRevB.63.195207",
3609 publisher = "American Physical Society",
3612 @Article{holmstroem08,
3613 title = "Threshold defect production in silicon determined by
3614 density functional theory molecular dynamics
3616 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3617 journal = "Phys. Rev. B",
3624 doi = "10.1103/PhysRevB.78.045202",
3625 publisher = "American Physical Society",
3626 notes = "threshold displacement comparison empirical and ab
3630 @Article{nordlund97,
3631 title = "Repulsive interatomic potentials calculated using
3632 Hartree-Fock and density-functional theory methods",
3633 journal = "Nucl. Instrum. Methods Phys. Res. B",
3640 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3641 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3642 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3643 notes = "repulsive ab initio potential",
3647 title = "Efficiency of ab-initio total energy calculations for
3648 metals and semiconductors using a plane-wave basis
3650 journal = "Comput. Mater. Sci.",
3657 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3658 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3659 author = "G. Kresse and J. Furthm{\"{u}}ller",
3664 title = "Projector augmented-wave method",
3665 author = "P. E. Bl{\"o}chl",
3666 journal = "Phys. Rev. B",
3669 pages = "17953--17979",
3673 doi = "10.1103/PhysRevB.50.17953",
3674 publisher = "American Physical Society",
3675 notes = "paw method",
3679 title = "Norm-Conserving Pseudopotentials",
3680 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3681 journal = "Phys. Rev. Lett.",
3684 pages = "1494--1497",
3688 doi = "10.1103/PhysRevLett.43.1494",
3689 publisher = "American Physical Society",
3690 notes = "norm-conserving pseudopotentials",
3693 @Article{vanderbilt90,
3694 title = "Soft self-consistent pseudopotentials in a generalized
3695 eigenvalue formalism",
3696 author = "David Vanderbilt",
3697 journal = "Phys. Rev. B",
3700 pages = "7892--7895",
3704 doi = "10.1103/PhysRevB.41.7892",
3705 publisher = "American Physical Society",
3706 notes = "vasp pseudopotentials",
3710 title = "Accurate and simple density functional for the
3711 electronic exchange energy: Generalized gradient
3713 author = "John P. Perdew and Yue Wang",
3714 journal = "Phys. Rev. B",
3717 pages = "8800--8802",
3721 doi = "10.1103/PhysRevB.33.8800",
3722 publisher = "American Physical Society",
3723 notes = "rapid communication gga",
3727 title = "Generalized gradient approximations for exchange and
3728 correlation: {A} look backward and forward",
3729 journal = "Physica B: Condensed Matter",
3736 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3737 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3738 author = "John P. Perdew",
3739 notes = "gga overview",
3743 title = "Atoms, molecules, solids, and surfaces: Applications
3744 of the generalized gradient approximation for exchange
3746 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3747 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3748 and Carlos Fiolhais",
3749 journal = "Phys. Rev. B",
3752 pages = "6671--6687",
3756 doi = "10.1103/PhysRevB.46.6671",
3757 publisher = "American Physical Society",
3758 notes = "gga pw91 (as in vasp)",
3761 @Article{baldereschi73,
3762 title = "Mean-Value Point in the Brillouin Zone",
3763 author = "A. Baldereschi",
3764 journal = "Phys. Rev. B",
3767 pages = "5212--5215",
3771 doi = "10.1103/PhysRevB.7.5212",
3772 publisher = "American Physical Society",
3773 notes = "mean value k point",
3777 title = "Ab initio pseudopotential calculations of dopant
3779 journal = "Comput. Mater. Sci.",
3786 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3787 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3788 author = "Jing Zhu",
3789 keywords = "TED (transient enhanced diffusion)",
3790 keywords = "Boron dopant",
3791 keywords = "Carbon dopant",
3792 keywords = "Defect",
3793 keywords = "ab initio pseudopotential method",
3794 keywords = "Impurity cluster",
3795 notes = "binding of c to si interstitial, c in si defects",
3799 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3801 title = "Si{C} buried layer formation by ion beam synthesis at
3805 journal = "Appl. Phys. Lett.",
3808 pages = "2646--2648",
3809 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3810 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3811 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3812 ELECTRON MICROSCOPY",
3813 URL = "http://link.aip.org/link/?APL/66/2646/1",
3814 doi = "10.1063/1.113112",
3815 notes = "precipitation mechanism by substitutional carbon, si
3816 self interstitials react with further implanted c",
3820 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3821 Kolodzey and A. Hairie",
3823 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3827 journal = "J. Appl. Phys.",
3830 pages = "4631--4633",
3831 keywords = "silicon compounds; precipitation; localised modes;
3832 semiconductor epitaxial layers; infrared spectra;
3833 Fourier transform spectra; thermal stability;
3835 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3836 doi = "10.1063/1.368703",
3837 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3841 author = "R Jones and B J Coomer and P R Briddon",
3842 title = "Quantum mechanical modelling of defects in
3844 journal = "J. Phys.: Condens. Matter",
3848 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3850 notes = "ab inito dft intro, vibrational modes, c defect in
3855 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3856 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3857 J. E. Greene and S. G. Bishop",
3859 title = "Carbon incorporation pathways and lattice sites in
3860 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3861 molecular-beam epitaxy",
3864 journal = "J. Appl. Phys.",
3867 pages = "5716--5727",
3868 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3869 doi = "10.1063/1.1465122",
3870 notes = "c substitutional incorporation pathway, dft and expt",
3874 title = "Dynamic properties of interstitial carbon and
3875 carbon-carbon pair defects in silicon",
3876 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3878 journal = "Phys. Rev. B",
3881 pages = "2188--2194",
3885 doi = "10.1103/PhysRevB.55.2188",
3886 publisher = "American Physical Society",
3887 notes = "ab initio c in si and di-carbon defect, no formation
3888 energies, different migration barriers and paths",
3892 title = "Interstitial carbon and the carbon-carbon pair in
3893 silicon: Semiempirical electronic-structure
3895 author = "Matthew J. Burnard and Gary G. DeLeo",
3896 journal = "Phys. Rev. B",
3899 pages = "10217--10225",
3903 doi = "10.1103/PhysRevB.47.10217",
3904 publisher = "American Physical Society",
3905 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3906 carbon defect, formation energies",
3910 title = "Electronic structure of interstitial carbon in
3912 author = "Morgan Besson and Gary G. DeLeo",
3913 journal = "Phys. Rev. B",
3916 pages = "4028--4033",
3920 doi = "10.1103/PhysRevB.43.4028",
3921 publisher = "American Physical Society",
3925 title = "Review of atomistic simulations of surface diffusion
3926 and growth on semiconductors",
3927 journal = "Comput. Mater. Sci.",
3932 note = "Proceedings of the Workshop on Virtual Molecular Beam
3935 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3936 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3937 author = "Efthimios Kaxiras",
3938 notes = "might contain c 100 db formation energy, overview md,
3939 tight binding, first principles",
3942 @Article{kaukonen98,
3943 title = "Effect of {N} and {B} doping on the growth of {CVD}
3945 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3947 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3948 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3950 journal = "Phys. Rev. B",
3953 pages = "9965--9970",
3957 doi = "10.1103/PhysRevB.57.9965",
3958 publisher = "American Physical Society",
3959 notes = "constrained conjugate gradient relaxation technique
3964 title = "Correlation between the antisite pair and the ${DI}$
3966 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3967 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3969 journal = "Phys. Rev. B",
3976 doi = "10.1103/PhysRevB.67.155203",
3977 publisher = "American Physical Society",
3981 title = "Production and recovery of defects in Si{C} after
3982 irradiation and deformation",
3983 journal = "J. Nucl. Mater.",
3986 pages = "1803--1808",
3990 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3991 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3992 author = "J. Chen and P. Jung and H. Klein",
3996 title = "Accumulation, dynamic annealing and thermal recovery
3997 of ion-beam-induced disorder in silicon carbide",
3998 journal = "Nucl. Instrum. Methods Phys. Res. B",
4005 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4006 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4007 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4010 @Article{bockstedte03,
4011 title = "Ab initio study of the migration of intrinsic defects
4013 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4015 journal = "Phys. Rev. B",
4022 doi = "10.1103/PhysRevB.68.205201",
4023 publisher = "American Physical Society",
4024 notes = "defect migration in sic",
4028 title = "Theoretical study of vacancy diffusion and
4029 vacancy-assisted clustering of antisites in Si{C}",
4030 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4032 journal = "Phys. Rev. B",
4039 doi = "10.1103/PhysRevB.68.155208",
4040 publisher = "American Physical Society",
4044 journal = "Telegrafiya i Telefoniya bez Provodov",
4048 author = "O. V. Lossev",
4052 title = "Luminous carborundum detector and detection effect and
4053 oscillations with crystals",
4054 journal = "Philosophical Magazine Series 7",
4057 pages = "1024--1044",
4059 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4060 author = "O. V. Lossev",
4064 journal = "Physik. Zeitschr.",
4068 author = "O. V. Lossev",
4072 journal = "Physik. Zeitschr.",
4076 author = "O. V. Lossev",
4080 journal = "Physik. Zeitschr.",
4084 author = "O. V. Lossev",
4088 title = "A note on carborundum",
4089 journal = "Electrical World",
4093 author = "H. J. Round",
4096 @Article{vashishath08,
4097 title = "Recent trends in silicon carbide device research",
4098 journal = "Mj. Int. J. Sci. Tech.",
4103 author = "Munish Vashishath and Ashoke K. Chatterjee",
4104 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4105 notes = "sic polytype electronic properties",
4109 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4111 title = "Growth and Properties of beta-Si{C} Single Crystals",
4114 journal = "Journal of Applied Physics",
4118 URL = "http://link.aip.org/link/?JAP/37/333/1",
4119 doi = "10.1063/1.1707837",
4120 notes = "sic melt growth",
4124 author = "A. E. van Arkel and J. H. de Boer",
4125 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4127 publisher = "WILEY-VCH Verlag GmbH",
4129 journal = "Z. Anorg. Chem.",
4132 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4133 doi = "10.1002/zaac.19251480133",
4134 notes = "van arkel apparatus",
4138 author = "K. Moers",
4140 journal = "Z. Anorg. Chem.",
4143 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4148 author = "J. T. Kendall",
4149 title = "Electronic Conduction in Silicon Carbide",
4152 journal = "The Journal of Chemical Physics",
4156 URL = "http://link.aip.org/link/?JCP/21/821/1",
4157 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4162 author = "J. A. Lely",
4164 journal = "Ber. Deut. Keram. Ges.",
4167 notes = "lely sublimation growth process",
4170 @Article{knippenberg63,
4171 author = "W. F. Knippenberg",
4173 journal = "Philips Res. Repts.",
4176 notes = "acheson process",
4179 @Article{hoffmann82,
4180 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4183 title = "Silicon carbide blue light emitting diodes with
4184 improved external quantum efficiency",
4187 journal = "Journal of Applied Physics",
4190 pages = "6962--6967",
4191 keywords = "light emitting diodes; silicon carbides; quantum
4192 efficiency; visible radiation; experimental data;
4193 epitaxy; fabrication; medium temperature; layers;
4194 aluminium; nitrogen; substrates; pn junctions;
4195 electroluminescence; spectra; current density;
4197 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4198 doi = "10.1063/1.330041",
4199 notes = "blue led, sublimation process",
4203 author = "Philip Neudeck",
4204 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4205 Road 44135 Cleveland OH",
4206 title = "Progress in silicon carbide semiconductor electronics
4208 journal = "Journal of Electronic Materials",
4209 publisher = "Springer Boston",
4211 keyword = "Chemistry and Materials Science",
4215 URL = "http://dx.doi.org/10.1007/BF02659688",
4216 note = "10.1007/BF02659688",
4218 notes = "sic data, advantages of 3c sic",
4221 @Article{bhatnagar93,
4222 author = "M. Bhatnagar and B. J. Baliga",
4223 journal = "Electron Devices, IEEE Transactions on",
4224 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4231 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4232 rectifiers;Si;SiC;breakdown voltages;drift region
4233 properties;output characteristics;power MOSFETs;power
4234 semiconductor devices;switching characteristics;thermal
4235 analysis;Schottky-barrier diodes;electric breakdown of
4236 solids;insulated gate field effect transistors;power
4237 transistors;semiconductor materials;silicon;silicon
4238 compounds;solid-state rectifiers;thermal analysis;",
4239 doi = "10.1109/16.199372",
4241 notes = "comparison 3c 6h sic and si devices",
4245 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4246 A. Powell and C. S. Salupo and L. G. Matus",
4247 journal = "Electron Devices, IEEE Transactions on",
4248 title = "Electrical properties of epitaxial 3{C}- and
4249 6{H}-Si{C} p-n junction diodes produced side-by-side on
4250 6{H}-Si{C} substrates",
4256 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4257 C;6H-SiC layers;6H-SiC substrates;CVD
4258 process;SiC;chemical vapor deposition;doping;electrical
4259 properties;epitaxial layers;light
4260 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4261 diodes;polytype;rectification characteristics;reverse
4262 leakage current;reverse voltages;temperature;leakage
4263 currents;power electronics;semiconductor
4264 diodes;semiconductor epitaxial layers;semiconductor
4265 growth;semiconductor materials;silicon
4266 compounds;solid-state rectifiers;substrates;vapour
4267 phase epitaxial growth;",
4268 doi = "10.1109/16.285038",
4270 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4275 author = "N. Schulze and D. L. Barrett and G. Pensl",
4277 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4278 single crystals by physical vapor transport",
4281 journal = "Applied Physics Letters",
4284 pages = "1632--1634",
4285 keywords = "silicon compounds; semiconductor materials;
4286 semiconductor growth; crystal growth from vapour;
4287 photoluminescence; Hall mobility",
4288 URL = "http://link.aip.org/link/?APL/72/1632/1",
4289 doi = "10.1063/1.121136",
4290 notes = "micropipe free 6h-sic pvt growth",
4294 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4296 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4299 journal = "Applied Physics Letters",
4303 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4304 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4305 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4306 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4308 URL = "http://link.aip.org/link/?APL/50/221/1",
4309 doi = "10.1063/1.97667",
4310 notes = "apb 3c-sic heteroepitaxy on si",
4313 @Article{shibahara86,
4314 title = "Surface morphology of cubic Si{C}(100) grown on
4315 Si(100) by chemical vapor deposition",
4316 journal = "Journal of Crystal Growth",
4323 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4325 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4327 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4330 @Article{desjardins96,
4331 author = "P. Desjardins and J. E. Greene",
4333 title = "Step-flow epitaxial growth on two-domain surfaces",
4336 journal = "Journal of Applied Physics",
4339 pages = "1423--1434",
4340 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4341 FILM GROWTH; SURFACE STRUCTURE",
4342 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4343 doi = "10.1063/1.360980",
4344 notes = "apb model",
4348 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4350 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4351 carbonization of silicon",
4354 journal = "Journal of Applied Physics",
4357 pages = "2070--2073",
4358 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4359 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4361 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4362 doi = "10.1063/1.360184",
4363 notes = "ssmbe of sic on si, lower temperatures",
4367 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4368 {MBE} using surface superstructure",
4369 journal = "Journal of Crystal Growth",
4376 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4377 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4378 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4379 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4380 notes = "gas source mbe of 3c-sic on 6h-sic",
4383 @Article{yoshinobu92,
4384 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4385 and Takashi Fuyuki and Hiroyuki Matsunami",
4387 title = "Lattice-matched epitaxial growth of single crystalline
4388 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4389 molecular beam epitaxy",
4392 journal = "Applied Physics Letters",
4396 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4397 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4398 INTERFACE STRUCTURE",
4399 URL = "http://link.aip.org/link/?APL/60/824/1",
4400 doi = "10.1063/1.107430",
4401 notes = "gas source mbe of 3c-sic on 6h-sic",
4404 @Article{yoshinobu90,
4405 title = "Atomic level control in gas source {MBE} growth of
4407 journal = "Journal of Crystal Growth",
4414 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4415 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4416 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4417 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4418 notes = "gas source mbe of 3c-sic on 3c-sic",
4422 title = "Atomic layer epitaxy controlled by surface
4423 superstructures in Si{C}",
4424 journal = "Thin Solid Films",
4431 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4432 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4433 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4435 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4440 title = "Microscopic mechanisms of accurate layer-by-layer
4441 growth of [beta]-Si{C}",
4442 journal = "Thin Solid Films",
4449 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4450 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4451 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4452 and S. Misawa and E. Sakuma and S. Yoshida",
4453 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4458 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4460 title = "Effects of gas flow ratio on silicon carbide thin film
4461 growth mode and polytype formation during gas-source
4462 molecular beam epitaxy",
4465 journal = "Applied Physics Letters",
4468 pages = "2851--2853",
4469 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4470 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4471 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4473 URL = "http://link.aip.org/link/?APL/65/2851/1",
4474 doi = "10.1063/1.112513",
4475 notes = "gas source mbe of 6h-sic on 6h-sic",
4479 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4480 title = "Heterointerface Control and Epitaxial Growth of
4481 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4482 publisher = "WILEY-VCH Verlag",
4484 journal = "physica status solidi (b)",
4487 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4492 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4493 journal = "Journal of Crystal Growth",
4500 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4501 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4502 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4503 keywords = "Reflection high-energy electron diffraction (RHEED)",
4504 keywords = "Scanning electron microscopy (SEM)",
4505 keywords = "Silicon carbide",
4506 keywords = "Silicon",
4507 keywords = "Island growth",
4508 notes = "lower temperature, 550-700",
4511 @Article{hatayama95,
4512 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4513 on Si using hydrocarbon radicals by gas source
4514 molecular beam epitaxy",
4515 journal = "Journal of Crystal Growth",
4522 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4523 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4524 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4525 and Hiroyuki Matsunami",
4529 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4530 title = "The Preference of Silicon Carbide for Growth in the
4531 Metastable Cubic Form",
4532 journal = "Journal of the American Ceramic Society",
4535 publisher = "Blackwell Publishing Ltd",
4537 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4538 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4539 pages = "2630--2633",
4540 keywords = "silicon carbide, crystal growth, crystal structure,
4541 calculations, stability",
4543 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4544 polytype dft calculation refs",
4547 @Article{allendorf91,
4548 title = "The adsorption of {H}-atoms on polycrystalline
4549 [beta]-silicon carbide",
4550 journal = "Surface Science",
4557 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4558 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4559 author = "Mark D. Allendorf and Duane A. Outka",
4560 notes = "h adsorption on 3c-sic",
4563 @Article{eaglesham93,
4564 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4565 D. P. Adams and S. M. Yalisove",
4567 title = "Effect of {H} on Si molecular-beam epitaxy",
4570 journal = "Journal of Applied Physics",
4573 pages = "6615--6618",
4574 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4575 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4576 DIFFUSION; ADSORPTION",
4577 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4578 doi = "10.1063/1.355101",
4579 notes = "h incorporation on si surface, lower surface
4584 author = "Ronald C. Newman",
4585 title = "Carbon in Crystalline Silicon",
4586 journal = "MRS Online Proceedings Library",
4591 doi = "10.1557/PROC-59-403",
4592 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4593 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4597 title = "The diffusivity of carbon in silicon",
4598 journal = "Journal of Physics and Chemistry of Solids",
4605 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4606 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4607 author = "R. C. Newman and J. Wakefield",
4608 notes = "diffusivity of substitutional c in si",
4612 author = "U. Gösele",
4613 title = "The Role of Carbon and Point Defects in Silicon",
4614 journal = "MRS Online Proceedings Library",
4619 doi = "10.1557/PROC-59-419",
4620 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4621 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4624 @Article{mukashev82,
4625 title = "Defects in Carbon-Implanted Silicon",
4626 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4627 Fukuoka and Haruo Saito",
4628 journal = "Japanese Journal of Applied Physics",
4630 number = "Part 1, No. 2",
4634 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4635 doi = "10.1143/JJAP.21.399",
4636 publisher = "The Japan Society of Applied Physics",
4640 title = "Convergence of supercell calculations for point
4641 defects in semiconductors: Vacancy in silicon",
4642 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4644 journal = "Phys. Rev. B",
4647 pages = "1318--1325",
4651 doi = "10.1103/PhysRevB.58.1318",
4652 publisher = "American Physical Society",
4653 notes = "convergence k point supercell size, vacancy in
4658 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4659 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4660 K{\"{o}}gler and W. Skorupa",
4662 title = "Spectroscopic characterization of phases formed by
4663 high-dose carbon ion implantation in silicon",
4666 journal = "Journal of Applied Physics",
4669 pages = "2978--2984",
4670 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4671 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4672 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4673 DEPENDENCE; PRECIPITATES; ANNEALING",
4674 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4675 doi = "10.1063/1.358714",
4678 @Article{romano-rodriguez96,
4679 title = "Detailed analysis of [beta]-Si{C} formation by high
4680 dose carbon ion implantation in silicon",
4681 journal = "Materials Science and Engineering B",
4686 note = "European Materials Research Society 1995 Spring
4687 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4688 Oxygen in Silicon and in Other Elemental
4691 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4692 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4693 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4694 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4696 keywords = "Silicon",
4697 keywords = "Ion implantation",
4698 notes = "incoherent 3c-sic precipitate",