2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Comparative study of silicon empirical interatomic
102 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
103 journal = "Phys. Rev. B",
106 pages = "2250--2279",
110 doi = "10.1103/PhysRevB.46.2250",
111 publisher = "American Physical Society",
112 notes = "comparison of classical potentials for si",
116 title = "Stress relaxation in $a-Si$ induced by ion
118 author = "H. M. Urbassek M. Koster",
119 journal = "Phys. Rev. B",
122 pages = "11219--11224",
126 doi = "10.1103/PhysRevB.62.11219",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
131 @Article{breadmore99,
132 title = "Direct simulation of ion-beam-induced stressing and
133 amorphization of silicon",
134 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
135 journal = "Phys. Rev. B",
138 pages = "12610--12616",
142 doi = "10.1103/PhysRevB.60.12610",
143 publisher = "American Physical Society",
144 notes = "virial derivation for 3-body tersoff potential",
148 author = "Henri Moissan",
149 title = "Nouvelles recherches sur la météorité de Cañon
151 journal = "Comptes rendus de l'Académie des Sciences",
158 author = "Y. S. Park",
159 title = "Si{C} Materials and Devices",
160 publisher = "Academic Press",
161 address = "San Diego",
166 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
167 Calvin H. Carter Jr. and D. Asbury",
168 title = "Si{C} Seeded Boule Growth",
169 journal = "Materials Science Forum",
173 notes = "modified lely process, micropipes",
177 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
178 Thermodynamical Properties of Lennard-Jones Molecules",
179 author = "Loup Verlet",
180 journal = "Phys. Rev.",
186 doi = "10.1103/PhysRev.159.98",
187 publisher = "American Physical Society",
188 notes = "velocity verlet integration algorithm equation of
192 @Article{berendsen84,
193 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
194 Gunsteren and A. DiNola and J. R. Haak",
196 title = "Molecular dynamics with coupling to an external bath",
199 journal = "The Journal of Chemical Physics",
202 pages = "3684--3690",
203 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
204 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
205 URL = "http://link.aip.org/link/?JCP/81/3684/1",
206 doi = "10.1063/1.448118",
207 notes = "berendsen thermostat barostat",
211 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
213 title = "Molecular dynamics determination of defect energetics
214 in beta -Si{C} using three representative empirical
216 journal = "Modelling and Simulation in Materials Science and
221 URL = "http://stacks.iop.org/0965-0393/3/615",
222 notes = "comparison of tersoff, pearson and eam for defect
223 energetics in sic; (m)eam parameters for sic",
228 title = "Relationship between the embedded-atom method and
230 author = "Donald W. Brenner",
231 journal = "Phys. Rev. Lett.",
238 doi = "10.1103/PhysRevLett.63.1022",
239 publisher = "American Physical Society",
240 notes = "relation of tersoff and eam potential",
244 title = "Molecular-dynamics study of self-interstitials in
246 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
247 journal = "Phys. Rev. B",
250 pages = "9552--9558",
254 doi = "10.1103/PhysRevB.35.9552",
255 publisher = "American Physical Society",
256 notes = "selft-interstitials in silicon, stillinger-weber,
257 calculation of defect formation energy, defect
262 title = "Extended interstitials in silicon and germanium",
263 author = "H. R. Schober",
264 journal = "Phys. Rev. B",
267 pages = "13013--13015",
271 doi = "10.1103/PhysRevB.39.13013",
272 publisher = "American Physical Society",
273 notes = "stillinger-weber silicon 110 stable and metastable
274 dumbbell configuration",
278 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
279 Defect accumulation, topological features, and
281 author = "F. Gao and W. J. Weber",
282 journal = "Phys. Rev. B",
289 doi = "10.1103/PhysRevB.66.024106",
290 publisher = "American Physical Society",
291 notes = "sic intro, si cascade in 3c-sic, amorphization,
292 tersoff modified, pair correlation of amorphous sic, md
296 @Article{devanathan98,
297 title = "Computer simulation of a 10 ke{V} Si displacement
299 journal = "Nuclear Instruments and Methods in Physics Research
300 Section B: Beam Interactions with Materials and Atoms",
306 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
307 author = "R. Devanathan and W. J. Weber and T. Diaz de la
309 notes = "modified tersoff short range potential, ab initio
313 @Article{devanathan98_2,
314 title = "Displacement threshold energies in [beta]-Si{C}",
315 journal = "Journal of Nuclear Materials",
321 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
322 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
324 notes = "modified tersoff, ab initio, combined ab initio
329 title = "Si{C}/Si heteroepitaxial growth",
330 author = "M. Kitabatake",
331 journal = "Thin Solid Films",
336 notes = "md simulation, sic si heteroepitaxy, mbe",
340 title = "Intrinsic point defects in crystalline silicon:
341 Tight-binding molecular dynamics studies of
342 self-diffusion, interstitial-vacancy recombination, and
344 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
346 journal = "Phys. Rev. B",
349 pages = "14279--14289",
353 doi = "10.1103/PhysRevB.55.14279",
354 publisher = "American Physical Society",
355 notes = "si self interstitial, diffusion, tbmd",
359 title = "Tight-binding theory of native point defects in
361 author = "L. Colombo",
362 journal = "Annu. Rev. Mater. Res.",
367 doi = "10.1146/annurev.matsci.32.111601.103036",
368 publisher = "Annual Reviews",
369 notes = "si self interstitial, tbmd, virial stress",
372 @Article{al-mushadani03,
373 title = "Free-energy calculations of intrinsic point defects in
375 author = "O. K. Al-Mushadani and R. J. Needs",
376 journal = "Phys. Rev. B",
383 doi = "10.1103/PhysRevB.68.235205",
384 publisher = "American Physical Society",
385 notes = "formation energies of intrinisc point defects in
386 silicon, si self interstitials",
390 title = "Ab initio study of self-diffusion in silicon over a
391 wide temperature range: Point defect states and
392 migration mechanisms",
393 author = "Shangyi Ma and Shaoqing Wang",
394 journal = "Phys. Rev. B",
401 doi = "10.1103/PhysRevB.81.193203",
402 publisher = "American Physical Society",
403 notes = "si self interstitial diffusion + refs",
407 title = "Ab initio and empirical-potential studies of defect
408 properties in $3{C}-Si{C}$",
409 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
411 journal = "Phys. Rev. B",
418 doi = "10.1103/PhysRevB.64.245208",
419 publisher = "American Physical Society",
420 notes = "defects in 3c-sic",
423 @Article{mattoni2002,
424 title = "Self-interstitial trapping by carbon complexes in
425 crystalline silicon",
426 author = "A. Mattoni and F. Bernardini and L. Colombo",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.195214",
435 publisher = "American Physical Society",
436 notes = "c in c-si, diffusion, interstitial configuration +
437 links, interaction of carbon and silicon
442 title = "Calculations of Silicon Self-Interstitial Defects",
443 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
445 journal = "Phys. Rev. Lett.",
448 pages = "2351--2354",
452 doi = "10.1103/PhysRevLett.83.2351",
453 publisher = "American Physical Society",
454 notes = "nice images of the defects, si defect overview +
459 title = "Identification of the migration path of interstitial
461 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
462 journal = "Phys. Rev. B",
465 pages = "7439--7442",
469 doi = "10.1103/PhysRevB.50.7439",
470 publisher = "American Physical Society",
471 notes = "carbon interstitial migration path shown, 001 c-si
476 title = "Ab initio investigation of carbon-related defects in
478 author = "A. Dal Pino and Andrew M. Rappe and J. D.
480 journal = "Phys. Rev. B",
483 pages = "12554--12557",
487 doi = "10.1103/PhysRevB.47.12554",
488 publisher = "American Physical Society",
489 notes = "c interstitials in crystalline silicon",
493 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
495 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
496 Sokrates T. Pantelides",
497 journal = "Phys. Rev. Lett.",
500 pages = "1814--1817",
504 doi = "10.1103/PhysRevLett.52.1814",
505 publisher = "American Physical Society",
506 notes = "microscopic theory diffusion silicon dft migration
511 title = "Short-range order, bulk moduli, and physical trends in
512 c-$Si1-x$$Cx$ alloys",
513 author = "P. C. Kelires",
514 journal = "Phys. Rev. B",
517 pages = "8784--8787",
521 doi = "10.1103/PhysRevB.55.8784",
522 publisher = "American Physical Society",
523 notes = "c strained si, montecarlo md, bulk moduli, next
528 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
529 Application to the $Si1-x-yGexCy$ System",
530 author = "P. C. Kelires",
531 journal = "Phys. Rev. Lett.",
534 pages = "1114--1117",
538 doi = "10.1103/PhysRevLett.75.1114",
539 publisher = "American Physical Society",
540 notes = "mc md, strain compensation in si ge by c insertion",
544 title = "Low temperature electron irradiation of silicon
546 journal = "Solid State Communications",
553 doi = "DOI: 10.1016/0038-1098(70)90074-8",
554 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
555 author = "A. R. Bean and R. C. Newman",
559 title = "{EPR} Observation of the Isolated Interstitial Carbon
561 author = "G. D. Watkins and K. L. Brower",
562 journal = "Phys. Rev. Lett.",
565 pages = "1329--1332",
569 doi = "10.1103/PhysRevLett.36.1329",
570 publisher = "American Physical Society",
571 notes = "epr observations of 100 interstitial carbon atom in
576 title = "{EPR} identification of the single-acceptor state of
577 interstitial carbon in silicon",
578 author = "G. D. Watkins L. W. Song",
579 journal = "Phys. Rev. B",
582 pages = "5759--5764",
586 doi = "10.1103/PhysRevB.42.5759",
587 publisher = "American Physical Society",
588 notes = "carbon diffusion in silicon",
592 author = "A K Tipping and R C Newman",
593 title = "The diffusion coefficient of interstitial carbon in
595 journal = "Semiconductor Science and Technology",
599 URL = "http://stacks.iop.org/0268-1242/2/315",
601 notes = "diffusion coefficient of carbon interstitials in
606 title = "Carbon incorporation into Si at high concentrations by
607 ion implantation and solid phase epitaxy",
608 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
609 Picraux and J. K. Watanabe and J. W. Mayer",
610 journal = "J. Appl. Phys.",
615 doi = "10.1063/1.360806",
616 notes = "strained silicon, carbon supersaturation",
619 @Article{laveant2002,
620 title = "Epitaxy of carbon-rich silicon with {MBE}",
621 author = "P. Laveant and G. Gerth and P. Werner and U.
623 journal = "Materials Science and Engineering B",
627 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
628 notes = "low c in si, tensile stress to compensate compressive
629 stress, avoid sic precipitation",
633 author = "P. Werner and S. Eichler and G. Mariani and R.
634 K{\"{o}}gler and W. Skorupa",
635 title = "Investigation of {C}[sub x]Si defects in {C} implanted
636 silicon by transmission electron microscopy",
639 journal = "Applied Physics Letters",
643 keywords = "silicon; ion implantation; carbon; crystal defects;
644 transmission electron microscopy; annealing; positron
645 annihilation; secondary ion mass spectroscopy; buried
646 layers; precipitation",
647 URL = "http://link.aip.org/link/?APL/70/252/1",
648 doi = "10.1063/1.118381",
649 notes = "si-c complexes, agglomerate, sic in si matrix, sic
653 @InProceedings{werner96,
654 author = "P. Werner and R. Koegler and W. Skorupa and D.
656 booktitle = "Ion Implantation Technology. Proceedings of the 11th
657 International Conference on",
658 title = "{TEM} investigation of {C}-Si defects in carbon
665 keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
666 atom/radiation induced defect interaction;C depth
667 distribution;C precipitation;C-Si defects;C-Si
668 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
669 energy ion implantation;ion implantation;metastable
670 agglomerates;microdefects;positron annihilation
671 spectroscopy;rapid thermal annealing;secondary ion mass
672 spectrometry;vacancy clusters;buried
673 layers;carbon;elemental semiconductors;impurity-defect
674 interactions;ion implantation;positron
675 annihilation;precipitation;rapid thermal
676 annealing;secondary ion mass
677 spectra;silicon;transmission electron
678 microscopy;vacancies (crystal);",
679 doi = "10.1109/IIT.1996.586497",
681 notes = "c-si agglomerates dumbbells",
685 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
686 Picraux and J. K. Watanabe and J. W. Mayer",
688 title = "Precipitation and relaxation in strained Si[sub 1 -
689 y]{C}[sub y]/Si heterostructures",
692 journal = "Journal of Applied Physics",
695 pages = "3656--3668",
696 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
697 URL = "http://link.aip.org/link/?JAP/76/3656/1",
698 doi = "10.1063/1.357429",
699 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
703 title = "Prospects for device implementation of wide band gap
705 author = "J. H. Edgar",
706 journal = "J. Mater. Res.",
711 doi = "10.1557/JMR.1992.0235",
712 notes = "properties wide band gap semiconductor, sic
716 @Article{zirkelbach2007,
717 title = "Monte Carlo simulation study of a selforganisation
718 process leading to ordered precipitate structures",
719 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
721 journal = "Nucl. Instr. and Meth. B",
728 doi = "doi:10.1016/j.nimb.2006.12.118",
729 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
733 @Article{zirkelbach2006,
734 title = "Monte-Carlo simulation study of the self-organization
735 of nanometric amorphous precipitates in regular arrays
736 during ion irradiation",
737 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
739 journal = "Nucl. Instr. and Meth. B",
746 doi = "doi:10.1016/j.nimb.2005.08.162",
747 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
751 @Article{zirkelbach2005,
752 title = "Modelling of a selforganization process leading to
753 periodic arrays of nanometric amorphous precipitates by
755 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
757 journal = "Comp. Mater. Sci.",
764 doi = "doi:10.1016/j.commatsci.2004.12.016",
765 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
770 title = "Controlling the density distribution of Si{C}
771 nanocrystals for the ion beam synthesis of buried Si{C}
773 journal = "Nuclear Instruments and Methods in Physics Research
774 Section B: Beam Interactions with Materials and Atoms",
781 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
782 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
783 author = "J. K. N. Lindner and B. Stritzker",
784 notes = "two-step implantation process",
787 @Article{lindner99_2,
788 title = "Mechanisms in the ion beam synthesis of Si{C} layers
790 journal = "Nuclear Instruments and Methods in Physics Research
791 Section B: Beam Interactions with Materials and Atoms",
797 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
798 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
799 author = "J. K. N. Lindner and B. Stritzker",
800 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
804 title = "Ion beam synthesis of buried Si{C} layers in silicon:
805 Basic physical processes",
806 journal = "Nuclear Instruments and Methods in Physics Research
807 Section B: Beam Interactions with Materials and Atoms",
814 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
815 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
816 author = "Jörg K. N. Lindner",
820 title = "High-dose carbon implantations into silicon:
821 fundamental studies for new technological tricks",
822 author = "J. K. N. Lindner",
823 journal = "Appl. Phys. A",
827 doi = "10.1007/s00339-002-2062-8",
828 notes = "ibs, burried sic layers",
832 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
833 application in buffer layer for Ga{N} epitaxial
835 journal = "Applied Surface Science",
840 note = "APHYS'03 Special Issue",
842 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
843 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
844 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
845 and S. Nishio and K. Yasuda and Y. Ishigami",
846 notes = "gan on 3c-sic",
850 author = "B. J. Alder and T. E. Wainwright",
851 title = "Phase Transition for a Hard Sphere System",
854 journal = "The Journal of Chemical Physics",
857 pages = "1208--1209",
858 URL = "http://link.aip.org/link/?JCP/27/1208/1",
859 doi = "10.1063/1.1743957",
863 author = "B. J. Alder and T. E. Wainwright",
864 title = "Studies in Molecular Dynamics. {I}. General Method",
867 journal = "The Journal of Chemical Physics",
871 URL = "http://link.aip.org/link/?JCP/31/459/1",
872 doi = "10.1063/1.1730376",
875 @Article{tersoff_si1,
876 title = "New empirical model for the structural properties of
878 author = "J. Tersoff",
879 journal = "Phys. Rev. Lett.",
886 doi = "10.1103/PhysRevLett.56.632",
887 publisher = "American Physical Society",
890 @Article{tersoff_si2,
891 title = "New empirical approach for the structure and energy of
893 author = "J. Tersoff",
894 journal = "Phys. Rev. B",
897 pages = "6991--7000",
901 doi = "10.1103/PhysRevB.37.6991",
902 publisher = "American Physical Society",
905 @Article{tersoff_si3,
906 title = "Empirical interatomic potential for silicon with
907 improved elastic properties",
908 author = "J. Tersoff",
909 journal = "Phys. Rev. B",
912 pages = "9902--9905",
916 doi = "10.1103/PhysRevB.38.9902",
917 publisher = "American Physical Society",
921 title = "Empirical Interatomic Potential for Carbon, with
922 Applications to Amorphous Carbon",
923 author = "J. Tersoff",
924 journal = "Phys. Rev. Lett.",
927 pages = "2879--2882",
931 doi = "10.1103/PhysRevLett.61.2879",
932 publisher = "American Physical Society",
936 title = "Modeling solid-state chemistry: Interatomic potentials
937 for multicomponent systems",
938 author = "J. Tersoff",
939 journal = "Phys. Rev. B",
942 pages = "5566--5568",
946 doi = "10.1103/PhysRevB.39.5566",
947 publisher = "American Physical Society",
951 title = "Carbon defects and defect reactions in silicon",
952 author = "J. Tersoff",
953 journal = "Phys. Rev. Lett.",
956 pages = "1757--1760",
960 doi = "10.1103/PhysRevLett.64.1757",
961 publisher = "American Physical Society",
965 title = "Point defects and dopant diffusion in silicon",
966 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
967 journal = "Rev. Mod. Phys.",
974 doi = "10.1103/RevModPhys.61.289",
975 publisher = "American Physical Society",
979 title = "Silicon carbide: synthesis and processing",
980 journal = "Nuclear Instruments and Methods in Physics Research
981 Section B: Beam Interactions with Materials and Atoms",
986 note = "Radiation Effects in Insulators",
988 doi = "DOI: 10.1016/0168-583X(96)00065-1",
989 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
994 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
995 Lin and B. Sverdlov and M. Burns",
997 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
998 ZnSe-based semiconductor device technologies",
1001 journal = "Journal of Applied Physics",
1004 pages = "1363--1398",
1005 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1006 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1007 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1009 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1010 doi = "10.1063/1.358463",
1014 author = "Noch Unbekannt",
1015 title = "How to find references",
1016 journal = "Journal of Applied References",
1023 title = "Atomistic simulation of thermomechanical properties of
1025 author = "Meijie Tang and Sidney Yip",
1026 journal = "Phys. Rev. B",
1029 pages = "15150--15159",
1032 doi = "10.1103/PhysRevB.52.15150",
1033 notes = "modified tersoff, scale cutoff with volume, promising
1034 tersoff reparametrization",
1035 publisher = "American Physical Society",
1039 title = "Silicon carbide as a new {MEMS} technology",
1040 journal = "Sensors and Actuators A: Physical",
1046 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1047 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1048 author = "Pasqualina M. Sarro",
1050 keywords = "Silicon carbide",
1051 keywords = "Micromachining",
1052 keywords = "Mechanical stress",
1056 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1057 semiconductor for high-temperature applications: {A}
1059 journal = "Solid-State Electronics",
1062 pages = "1409--1422",
1065 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1066 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1067 author = "J. B. Casady and R. W. Johnson",
1070 @Article{giancarli98,
1071 title = "Design requirements for Si{C}/Si{C} composites
1072 structural material in fusion power reactor blankets",
1073 journal = "Fusion Engineering and Design",
1079 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1080 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1081 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1082 Marois and N. B. Morley and J. F. Salavy",
1086 title = "Electrical and optical characterization of Si{C}",
1087 journal = "Physica B: Condensed Matter",
1093 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1094 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1095 author = "G. Pensl and W. J. Choyke",
1099 title = "Investigation of growth processes of ingots of silicon
1100 carbide single crystals",
1101 journal = "Journal of Crystal Growth",
1106 notes = "modifief lely process",
1108 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1109 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1110 author = "Yu. M. Tairov and V. F. Tsvetkov",
1114 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1117 title = "Production of large-area single-crystal wafers of
1118 cubic Si{C} for semiconductor devices",
1121 journal = "Applied Physics Letters",
1125 keywords = "silicon carbides; layers; chemical vapor deposition;
1127 URL = "http://link.aip.org/link/?APL/42/460/1",
1128 doi = "10.1063/1.93970",
1129 notes = "cvd of 3c-sic on si, sic buffer layer",
1133 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1134 and Hiroyuki Matsunami",
1136 title = "Epitaxial growth and electric characteristics of cubic
1140 journal = "Journal of Applied Physics",
1143 pages = "4889--4893",
1144 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1145 doi = "10.1063/1.338355",
1146 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1151 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1153 title = "Growth and Characterization of Cubic Si{C}
1154 Single-Crystal Films on Si",
1157 journal = "Journal of The Electrochemical Society",
1160 pages = "1558--1565",
1161 keywords = "semiconductor materials; silicon compounds; carbon
1162 compounds; crystal morphology; electron mobility",
1163 URL = "http://link.aip.org/link/?JES/134/1558/1",
1164 doi = "10.1149/1.2100708",
1165 notes = "blue light emitting diodes (led)",
1169 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1170 and Hiroyuki Matsunami",
1171 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1175 journal = "Journal of Applied Physics",
1179 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1180 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1182 URL = "http://link.aip.org/link/?JAP/73/726/1",
1183 doi = "10.1063/1.353329",
1184 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1188 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1189 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1190 Yoganathan and J. Yang and P. Pirouz",
1192 title = "Growth of improved quality 3{C}-Si{C} films on
1193 6{H}-Si{C} substrates",
1196 journal = "Applied Physics Letters",
1199 pages = "1353--1355",
1200 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1201 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1202 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1204 URL = "http://link.aip.org/link/?APL/56/1353/1",
1205 doi = "10.1063/1.102512",
1206 notes = "cvd of 3c-sic on 6h-sic",
1210 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1211 Thokala and M. J. Loboda",
1213 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1214 films on 6{H}-Si{C} by chemical vapor deposition from
1218 journal = "Journal of Applied Physics",
1221 pages = "1271--1273",
1222 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1223 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1225 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1226 doi = "10.1063/1.360368",
1227 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1231 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1232 [alpha]-Si{C}(0001) at low temperatures by solid-source
1233 molecular beam epitaxy",
1234 journal = "Journal of Crystal Growth",
1240 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1241 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1242 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1244 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1247 @Article{fissel95_apl,
1248 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1250 title = "Low-temperature growth of Si{C} thin films on Si and
1251 6{H}--Si{C} by solid-source molecular beam epitaxy",
1254 journal = "Applied Physics Letters",
1257 pages = "3182--3184",
1258 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1260 URL = "http://link.aip.org/link/?APL/66/3182/1",
1261 doi = "10.1063/1.113716",
1262 notes = "mbe 3c-sic on si and 6h-sic",
1266 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1268 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1272 journal = "Applied Physics Letters",
1276 URL = "http://link.aip.org/link/?APL/18/509/1",
1277 doi = "10.1063/1.1653516",
1278 notes = "first time sic by ibs, follow cites for precipitation
1283 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1284 J. Davis and G. E. Celler",
1286 title = "Formation of buried layers of beta-Si{C} using ion
1287 beam synthesis and incoherent lamp annealing",
1290 journal = "Applied Physics Letters",
1293 pages = "2242--2244",
1294 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1295 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1296 URL = "http://link.aip.org/link/?APL/51/2242/1",
1297 doi = "10.1063/1.98953",
1298 notes = "nice tem images, sic by ibs",
1302 author = "R. I. Scace and G. A. Slack",
1304 title = "Solubility of Carbon in Silicon and Germanium",
1307 journal = "The Journal of Chemical Physics",
1310 pages = "1551--1555",
1311 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1312 doi = "10.1063/1.1730236",
1313 notes = "solubility of c in c-si",
1317 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1318 F. W. Saris and W. Vandervorst",
1320 title = "Role of {C} and {B} clusters in transient diffusion of
1324 journal = "Applied Physics Letters",
1327 pages = "1150--1152",
1328 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1329 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1331 URL = "http://link.aip.org/link/?APL/68/1150/1",
1332 doi = "10.1063/1.115706",
1333 notes = "suppression of transient enhanced diffusion (ted)",
1337 title = "Implantation and transient boron diffusion: the role
1338 of the silicon self-interstitial",
1339 journal = "Nuclear Instruments and Methods in Physics Research
1340 Section B: Beam Interactions with Materials and Atoms",
1345 note = "Selected Papers of the Tenth International Conference
1346 on Ion Implantation Technology (IIT '94)",
1348 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1349 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1350 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1355 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1356 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1357 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1360 title = "Physical mechanisms of transient enhanced dopant
1361 diffusion in ion-implanted silicon",
1364 journal = "Journal of Applied Physics",
1367 pages = "6031--6050",
1368 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1369 doi = "10.1063/1.364452",
1370 notes = "ted, transient enhanced diffusion, c silicon trap",
1374 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1376 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1377 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1380 journal = "Applied Physics Letters",
1384 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1385 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1386 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1388 URL = "http://link.aip.org/link/?APL/64/324/1",
1389 doi = "10.1063/1.111195",
1390 notes = "beta sic nano crystals in si, mbe, annealing",
1394 author = "Richard A. Soref",
1396 title = "Optical band gap of the ternary semiconductor Si[sub 1
1397 - x - y]Ge[sub x]{C}[sub y]",
1400 journal = "Journal of Applied Physics",
1403 pages = "2470--2472",
1404 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1405 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1407 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1408 doi = "10.1063/1.349403",
1409 notes = "band gap of strained si by c",
1413 author = "E Kasper",
1414 title = "Superlattices of group {IV} elements, a new
1415 possibility to produce direct band gap material",
1416 journal = "Physica Scripta",
1419 URL = "http://stacks.iop.org/1402-4896/T35/232",
1421 notes = "superlattices, convert indirect band gap into a
1426 author = "H. J. Osten and J. Griesche and S. Scalese",
1428 title = "Substitutional carbon incorporation in epitaxial
1429 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1430 molecular beam epitaxy",
1433 journal = "Applied Physics Letters",
1437 keywords = "molecular beam epitaxial growth; semiconductor growth;
1438 wide band gap semiconductors; interstitials; silicon
1440 URL = "http://link.aip.org/link/?APL/74/836/1",
1441 doi = "10.1063/1.123384",
1442 notes = "substitutional c in si",
1445 @Article{hohenberg64,
1446 title = "Inhomogeneous Electron Gas",
1447 author = "P. Hohenberg and W. Kohn",
1448 journal = "Phys. Rev.",
1451 pages = "B864--B871",
1455 doi = "10.1103/PhysRev.136.B864",
1456 publisher = "American Physical Society",
1457 notes = "density functional theory, dft",
1461 title = "Self-Consistent Equations Including Exchange and
1462 Correlation Effects",
1463 author = "W. Kohn and L. J. Sham",
1464 journal = "Phys. Rev.",
1467 pages = "A1133--A1138",
1471 doi = "10.1103/PhysRev.140.A1133",
1472 publisher = "American Physical Society",
1473 notes = "dft, exchange and correlation",
1477 title = "Strain-stabilized highly concentrated pseudomorphic
1478 $Si1-x$$Cx$ layers in Si",
1479 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1481 journal = "Phys. Rev. Lett.",
1484 pages = "3578--3581",
1488 doi = "10.1103/PhysRevLett.72.3578",
1489 publisher = "American Physical Society",
1490 notes = "high c concentration in si, heterostructure, starined
1495 title = "Electron Transport Model for Strained Silicon-Carbon
1497 author = "Shu-Tong Chang and Chung-Yi Lin",
1498 journal = "Japanese Journal of Applied Physics",
1501 pages = "2257--2262",
1504 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1505 doi = "10.1143/JJAP.44.2257",
1506 publisher = "The Japan Society of Applied Physics",
1507 notes = "enhance of electron mobility in starined si",
1511 author = "H. J. Osten and P. Gaworzewski",
1513 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1514 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1518 journal = "Journal of Applied Physics",
1521 pages = "4977--4981",
1522 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1523 semiconductors; semiconductor epitaxial layers; carrier
1524 density; Hall mobility; interstitials; defect states",
1525 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1526 doi = "10.1063/1.366364",
1527 notes = "charge transport in strained si",
1531 title = "Carbon-mediated aggregation of self-interstitials in
1532 silicon: {A} large-scale molecular dynamics study",
1533 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1534 journal = "Phys. Rev. B",
1541 doi = "10.1103/PhysRevB.69.155214",
1542 publisher = "American Physical Society",
1543 notes = "simulation using promising tersoff reparametrization",
1547 title = "Event-Based Relaxation of Continuous Disordered
1549 author = "G. T. Barkema and Normand Mousseau",
1550 journal = "Phys. Rev. Lett.",
1553 pages = "4358--4361",
1557 doi = "10.1103/PhysRevLett.77.4358",
1558 publisher = "American Physical Society",
1559 notes = "activation relaxation technique, art, speed up slow
1564 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1565 Minoukadeh and F. Willaime",
1567 title = "Some improvements of the activation-relaxation
1568 technique method for finding transition pathways on
1569 potential energy surfaces",
1572 journal = "The Journal of Chemical Physics",
1578 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1579 surfaces; vacancies (crystal)",
1580 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1581 doi = "10.1063/1.3088532",
1582 notes = "improvements to art, refs for methods to find
1583 transition pathways",
1586 @Article{parrinello81,
1587 author = "M. Parrinello and A. Rahman",
1589 title = "Polymorphic transitions in single crystals: {A} new
1590 molecular dynamics method",
1593 journal = "Journal of Applied Physics",
1596 pages = "7182--7190",
1597 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1598 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1599 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1600 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1601 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1603 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1604 doi = "10.1063/1.328693",
1607 @Article{stillinger85,
1608 title = "Computer simulation of local order in condensed phases
1610 author = "Frank H. Stillinger and Thomas A. Weber",
1611 journal = "Phys. Rev. B",
1614 pages = "5262--5271",
1618 doi = "10.1103/PhysRevB.31.5262",
1619 publisher = "American Physical Society",
1623 title = "Empirical potential for hydrocarbons for use in
1624 simulating the chemical vapor deposition of diamond
1626 author = "Donald W. Brenner",
1627 journal = "Phys. Rev. B",
1630 pages = "9458--9471",
1634 doi = "10.1103/PhysRevB.42.9458",
1635 publisher = "American Physical Society",
1636 notes = "brenner hydro carbons",
1640 title = "Modeling of Covalent Bonding in Solids by Inversion of
1641 Cohesive Energy Curves",
1642 author = "Martin Z. Bazant and Efthimios Kaxiras",
1643 journal = "Phys. Rev. Lett.",
1646 pages = "4370--4373",
1650 doi = "10.1103/PhysRevLett.77.4370",
1651 publisher = "American Physical Society",
1652 notes = "first si edip",
1656 title = "Environment-dependent interatomic potential for bulk
1658 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1660 journal = "Phys. Rev. B",
1663 pages = "8542--8552",
1667 doi = "10.1103/PhysRevB.56.8542",
1668 publisher = "American Physical Society",
1669 notes = "second si edip",
1673 title = "Interatomic potential for silicon defects and
1675 author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
1676 Kaxiras and V. V. Bulatov and Sidney Yip",
1677 journal = "Phys. Rev. B",
1680 pages = "2539--2550",
1684 doi = "10.1103/PhysRevB.58.2539",
1685 publisher = "American Physical Society",
1686 notes = "latest si edip",
1690 title = "{PARCAS} molecular dynamics code",
1691 author = "K. Nordlund",
1696 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1698 author = "Arthur F. Voter",
1699 journal = "Phys. Rev. Lett.",
1702 pages = "3908--3911",
1706 doi = "10.1103/PhysRevLett.78.3908",
1707 publisher = "American Physical Society",
1708 notes = "hyperdynamics, accelerated md",
1712 author = "Arthur F. Voter",
1714 title = "A method for accelerating the molecular dynamics
1715 simulation of infrequent events",
1718 journal = "The Journal of Chemical Physics",
1721 pages = "4665--4677",
1722 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1723 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1724 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1725 energy functions; surface diffusion; reaction kinetics
1726 theory; potential energy surfaces",
1727 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1728 doi = "10.1063/1.473503",
1729 notes = "improved hyperdynamics md",
1732 @Article{sorensen2000,
1733 author = "Mads R. S\o rensen and Arthur F. Voter",
1735 title = "Temperature-accelerated dynamics for simulation of
1739 journal = "The Journal of Chemical Physics",
1742 pages = "9599--9606",
1743 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1744 MOLECULAR DYNAMICS METHOD; surface diffusion",
1745 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1746 doi = "10.1063/1.481576",
1747 notes = "temperature accelerated dynamics, tad",
1751 title = "Parallel replica method for dynamics of infrequent
1753 author = "Arthur F. Voter",
1754 journal = "Phys. Rev. B",
1757 pages = "R13985--R13988",
1761 doi = "10.1103/PhysRevB.57.R13985",
1762 publisher = "American Physical Society",
1763 notes = "parallel replica method, accelerated md",
1767 author = "Xiongwu Wu and Shaomeng Wang",
1769 title = "Enhancing systematic motion in molecular dynamics
1773 journal = "The Journal of Chemical Physics",
1776 pages = "9401--9410",
1777 keywords = "molecular dynamics method; argon; Lennard-Jones
1778 potential; crystallisation; liquid theory",
1779 URL = "http://link.aip.org/link/?JCP/110/9401/1",
1780 doi = "10.1063/1.478948",
1781 notes = "self guided md, sgmd, accelerated md, enhancing
1785 @Article{choudhary05,
1786 author = "Devashish Choudhary and Paulette Clancy",
1788 title = "Application of accelerated molecular dynamics schemes
1789 to the production of amorphous silicon",
1792 journal = "The Journal of Chemical Physics",
1798 keywords = "molecular dynamics method; silicon; glass structure;
1799 amorphous semiconductors",
1800 URL = "http://link.aip.org/link/?JCP/122/154509/1",
1801 doi = "10.1063/1.1878733",
1802 notes = "explanation of sgmd and hyper md, applied to amorphous
1807 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
1809 title = "Carbon precipitation in silicon: Why is it so
1813 journal = "Applied Physics Letters",
1816 pages = "3336--3338",
1817 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
1818 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
1820 URL = "http://link.aip.org/link/?APL/62/3336/1",
1821 doi = "10.1063/1.109063",
1822 notes = "interfacial energy of cubic sic and si",
1825 @Article{chaussende08,
1826 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
1827 journal = "Journal of Crystal Growth",
1832 note = "Proceedings of the E-MRS Conference, Symposium G -
1833 Substrates of Wide Bandgap Materials",
1835 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
1836 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
1837 author = "D. Chaussende and F. Mercier and A. Boulle and F.
1838 Conchon and M. Soueidan and G. Ferro and A. Mantzari
1839 and A. Andreadou and E. K. Polychroniadis and C.
1840 Balloud and S. Juillaguet and J. Camassel and M. Pons",
1841 notes = "3c-sic crystal growth, sic fabrication + links,
1846 title = "Forces in Molecules",
1847 author = "R. P. Feynman",
1848 journal = "Phys. Rev.",
1855 doi = "10.1103/PhysRev.56.340",
1856 publisher = "American Physical Society",
1857 notes = "hellmann feynman forces",
1861 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
1862 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
1863 their Contrasting Properties",
1864 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
1866 journal = "Phys. Rev. Lett.",
1873 doi = "10.1103/PhysRevLett.84.943",
1874 publisher = "American Physical Society",
1875 notes = "si sio2 and sic sio2 interface",
1878 @Article{djurabekova08,
1879 title = "Atomistic simulation of the interface structure of Si
1880 nanocrystals embedded in amorphous silica",
1881 author = "Flyura Djurabekova and Kai Nordlund",
1882 journal = "Phys. Rev. B",
1889 doi = "10.1103/PhysRevB.77.115325",
1890 publisher = "American Physical Society",
1891 notes = "nc-si in sio2, interface energy, nc construction,
1892 angular distribution, coordination",
1896 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
1897 W. Liang and J. Zou",
1899 title = "Nature of interfacial defects and their roles in
1900 strain relaxation at highly lattice mismatched
1901 3{C}-Si{C}/Si (001) interface",
1904 journal = "Journal of Applied Physics",
1910 keywords = "anelastic relaxation; crystal structure; dislocations;
1911 elemental semiconductors; semiconductor growth;
1912 semiconductor thin films; silicon; silicon compounds;
1913 stacking faults; wide band gap semiconductors",
1914 URL = "http://link.aip.org/link/?JAP/106/073522/1",
1915 doi = "10.1063/1.3234380",
1916 notes = "sic/si interface, follow refs, tem image
1920 @Article{kitabatake93,
1921 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
1924 title = "Simulations and experiments of Si{C} heteroepitaxial
1925 growth on Si(001) surface",
1928 journal = "Journal of Applied Physics",
1931 pages = "4438--4445",
1932 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
1933 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
1934 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
1935 URL = "http://link.aip.org/link/?JAP/74/4438/1",
1936 doi = "10.1063/1.354385",
1937 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
1941 @Article{pizzagalli03,
1942 title = "Theoretical investigations of a highly mismatched
1943 interface: Si{C}/Si(001)",
1944 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
1946 journal = "Phys. Rev. B",
1953 doi = "10.1103/PhysRevB.68.195302",
1954 publisher = "American Physical Society",
1955 notes = "tersoff md and ab initio sic/si interface study",
1959 title = "Atomic configurations of dislocation core and twin
1960 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
1961 electron microscopy",
1962 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
1963 H. Zheng and J. W. Liang",
1964 journal = "Phys. Rev. B",
1971 doi = "10.1103/PhysRevB.75.184103",
1972 publisher = "American Physical Society",
1973 notes = "hrem image deconvolution on 3c-sic on si, distinguish
1977 @Article{hornstra58,
1978 title = "Dislocations in the diamond lattice",
1979 journal = "Journal of Physics and Chemistry of Solids",
1986 doi = "DOI: 10.1016/0022-3697(58)90138-0",
1987 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
1988 author = "J. Hornstra",
1989 notes = "dislocations in diamond lattice",
1992 @Article{eichhorn99,
1993 author = "F. Eichhorn and N. Schell and W. Matz and R.
1996 title = "Strain and Si{C} particle formation in silicon
1997 implanted with carbon ions of medium fluence studied by
1998 synchrotron x-ray diffraction",
2001 journal = "Journal of Applied Physics",
2004 pages = "4184--4187",
2005 keywords = "silicon; carbon; elemental semiconductors; chemical
2006 interdiffusion; ion implantation; X-ray diffraction;
2007 precipitation; semiconductor doping",
2008 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2009 doi = "10.1063/1.371344",
2010 notes = "sic conversion by ibs, detected substitutional
2014 @Article{eichhorn02,
2015 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2016 Metzger and W. Matz and R. K{\"{o}}gler",
2018 title = "Structural relation between Si and Si{C} formed by
2019 carbon ion implantation",
2022 journal = "Journal of Applied Physics",
2025 pages = "1287--1292",
2026 keywords = "silicon compounds; wide band gap semiconductors; ion
2027 implantation; annealing; X-ray scattering; transmission
2028 electron microscopy",
2029 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2030 doi = "10.1063/1.1428105",
2031 notes = "3c-sic alignement to si host in ibs depending on
2032 temperature, might explain c int to c sub trafo",
2036 author = "G Lucas and M Bertolus and L Pizzagalli",
2037 title = "An environment-dependent interatomic potential for
2038 silicon carbide: calculation of bulk properties,
2039 high-pressure phases, point and extended defects, and
2040 amorphous structures",
2041 journal = "Journal of Physics: Condensed Matter",
2045 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",