2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Comparative study of silicon empirical interatomic
102 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
103 journal = "Phys. Rev. B",
106 pages = "2250--2279",
110 doi = "10.1103/PhysRevB.46.2250",
111 publisher = "American Physical Society",
112 notes = "comparison of classical potentials for si",
116 title = "Stress relaxation in $a-Si$ induced by ion
118 author = "H. M. Urbassek M. Koster",
119 journal = "Phys. Rev. B",
122 pages = "11219--11224",
126 doi = "10.1103/PhysRevB.62.11219",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
131 @Article{breadmore99,
132 title = "Direct simulation of ion-beam-induced stressing and
133 amorphization of silicon",
134 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
135 journal = "Phys. Rev. B",
138 pages = "12610--12616",
142 doi = "10.1103/PhysRevB.60.12610",
143 publisher = "American Physical Society",
144 notes = "virial derivation for 3-body tersoff potential",
148 author = "Henri Moissan",
149 title = "Nouvelles recherches sur la météorité de Cañon
151 journal = "Comptes rendus de l'Académie des Sciences",
158 author = "Y. S. Park",
159 title = "Si{C} Materials and Devices",
160 publisher = "Academic Press",
161 address = "San Diego",
166 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
167 Calvin H. Carter Jr. and D. Asbury",
168 title = "Si{C} Seeded Boule Growth",
169 journal = "Materials Science Forum",
173 notes = "modified lely process, micropipes",
177 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
178 Thermodynamical Properties of Lennard-Jones Molecules",
179 author = "Loup Verlet",
180 journal = "Phys. Rev.",
186 doi = "10.1103/PhysRev.159.98",
187 publisher = "American Physical Society",
188 notes = "velocity verlet integration algorithm equation of
192 @Article{berendsen84,
193 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
194 Gunsteren and A. DiNola and J. R. Haak",
196 title = "Molecular dynamics with coupling to an external bath",
199 journal = "The Journal of Chemical Physics",
202 pages = "3684--3690",
203 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
204 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
205 URL = "http://link.aip.org/link/?JCP/81/3684/1",
206 doi = "10.1063/1.448118",
207 notes = "berendsen thermostat barostat",
211 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
213 title = "Molecular dynamics determination of defect energetics
214 in beta -Si{C} using three representative empirical
216 journal = "Modelling and Simulation in Materials Science and
221 URL = "http://stacks.iop.org/0965-0393/3/615",
222 notes = "comparison of tersoff, pearson and eam for defect
223 energetics in sic; (m)eam parameters for sic",
228 title = "Relationship between the embedded-atom method and
230 author = "Donald W. Brenner",
231 journal = "Phys. Rev. Lett.",
238 doi = "10.1103/PhysRevLett.63.1022",
239 publisher = "American Physical Society",
240 notes = "relation of tersoff and eam potential",
244 title = "Molecular-dynamics study of self-interstitials in
246 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
247 journal = "Phys. Rev. B",
250 pages = "9552--9558",
254 doi = "10.1103/PhysRevB.35.9552",
255 publisher = "American Physical Society",
256 notes = "selft-interstitials in silicon, stillinger-weber,
257 calculation of defect formation energy, defect
262 title = "Extended interstitials in silicon and germanium",
263 author = "H. R. Schober",
264 journal = "Phys. Rev. B",
267 pages = "13013--13015",
271 doi = "10.1103/PhysRevB.39.13013",
272 publisher = "American Physical Society",
273 notes = "stillinger-weber silicon 110 stable and metastable
274 dumbbell configuration",
278 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
279 Defect accumulation, topological features, and
281 author = "F. Gao and W. J. Weber",
282 journal = "Phys. Rev. B",
289 doi = "10.1103/PhysRevB.66.024106",
290 publisher = "American Physical Society",
291 notes = "sic intro, si cascade in 3c-sic, amorphization,
292 tersoff modified, pair correlation of amorphous sic, md
296 @Article{devanathan98,
297 title = "Computer simulation of a 10 ke{V} Si displacement
299 journal = "Nuclear Instruments and Methods in Physics Research
300 Section B: Beam Interactions with Materials and Atoms",
306 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
307 author = "R. Devanathan and W. J. Weber and T. Diaz de la
309 notes = "modified tersoff short range potential, ab initio
313 @Article{devanathan98_2,
314 title = "Displacement threshold energies in [beta]-Si{C}",
315 journal = "Journal of Nuclear Materials",
321 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
322 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
324 notes = "modified tersoff, ab initio, combined ab initio
329 title = "Si{C}/Si heteroepitaxial growth",
330 author = "M. Kitabatake",
331 journal = "Thin Solid Films",
336 notes = "md simulation, sic si heteroepitaxy, mbe",
340 title = "Intrinsic point defects in crystalline silicon:
341 Tight-binding molecular dynamics studies of
342 self-diffusion, interstitial-vacancy recombination, and
344 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
346 journal = "Phys. Rev. B",
349 pages = "14279--14289",
353 doi = "10.1103/PhysRevB.55.14279",
354 publisher = "American Physical Society",
355 notes = "si self interstitial, diffusion, tbmd",
359 title = "Tight-binding theory of native point defects in
361 author = "L. Colombo",
362 journal = "Annu. Rev. Mater. Res.",
367 doi = "10.1146/annurev.matsci.32.111601.103036",
368 publisher = "Annual Reviews",
369 notes = "si self interstitial, tbmd, virial stress",
372 @Article{al-mushadani03,
373 title = "Free-energy calculations of intrinsic point defects in
375 author = "O. K. Al-Mushadani and R. J. Needs",
376 journal = "Phys. Rev. B",
383 doi = "10.1103/PhysRevB.68.235205",
384 publisher = "American Physical Society",
385 notes = "formation energies of intrinisc point defects in
386 silicon, si self interstitials",
390 title = "Ab initio study of self-diffusion in silicon over a
391 wide temperature range: Point defect states and
392 migration mechanisms",
393 author = "Shangyi Ma and Shaoqing Wang",
394 journal = "Phys. Rev. B",
401 doi = "10.1103/PhysRevB.81.193203",
402 publisher = "American Physical Society",
403 notes = "si self interstitial diffusion + refs",
407 title = "Ab initio and empirical-potential studies of defect
408 properties in $3{C}-Si{C}$",
409 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
411 journal = "Phys. Rev. B",
418 doi = "10.1103/PhysRevB.64.245208",
419 publisher = "American Physical Society",
420 notes = "defects in 3c-sic",
423 @Article{mattoni2002,
424 title = "Self-interstitial trapping by carbon complexes in
425 crystalline silicon",
426 author = "A. Mattoni and F. Bernardini and L. Colombo",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.195214",
435 publisher = "American Physical Society",
436 notes = "c in c-si, diffusion, interstitial configuration +
437 links, interaction of carbon and silicon
442 title = "Calculations of Silicon Self-Interstitial Defects",
443 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
445 journal = "Phys. Rev. Lett.",
448 pages = "2351--2354",
452 doi = "10.1103/PhysRevLett.83.2351",
453 publisher = "American Physical Society",
454 notes = "nice images of the defects, si defect overview +
459 title = "Identification of the migration path of interstitial
461 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
462 journal = "Phys. Rev. B",
465 pages = "7439--7442",
469 doi = "10.1103/PhysRevB.50.7439",
470 publisher = "American Physical Society",
471 notes = "carbon interstitial migration path shown, 001 c-si
476 title = "Ab initio investigation of carbon-related defects in
478 author = "A. Dal Pino and Andrew M. Rappe and J. D.
480 journal = "Phys. Rev. B",
483 pages = "12554--12557",
487 doi = "10.1103/PhysRevB.47.12554",
488 publisher = "American Physical Society",
489 notes = "c interstitials in crystalline silicon",
493 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
495 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
496 Sokrates T. Pantelides",
497 journal = "Phys. Rev. Lett.",
500 pages = "1814--1817",
504 doi = "10.1103/PhysRevLett.52.1814",
505 publisher = "American Physical Society",
506 notes = "microscopic theory diffusion silicon dft migration
511 title = "Short-range order, bulk moduli, and physical trends in
512 c-$Si1-x$$Cx$ alloys",
513 author = "P. C. Kelires",
514 journal = "Phys. Rev. B",
517 pages = "8784--8787",
521 doi = "10.1103/PhysRevB.55.8784",
522 publisher = "American Physical Society",
523 notes = "c strained si, montecarlo md, bulk moduli, next
528 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
529 Application to the $Si1-x-yGexCy$ System",
530 author = "P. C. Kelires",
531 journal = "Phys. Rev. Lett.",
534 pages = "1114--1117",
538 doi = "10.1103/PhysRevLett.75.1114",
539 publisher = "American Physical Society",
540 notes = "mc md, strain compensation in si ge by c insertion",
544 title = "Low temperature electron irradiation of silicon
546 journal = "Solid State Communications",
553 doi = "DOI: 10.1016/0038-1098(70)90074-8",
554 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
555 author = "A. R. Bean and R. C. Newman",
559 title = "{EPR} Observation of the Isolated Interstitial Carbon
561 author = "G. D. Watkins and K. L. Brower",
562 journal = "Phys. Rev. Lett.",
565 pages = "1329--1332",
569 doi = "10.1103/PhysRevLett.36.1329",
570 publisher = "American Physical Society",
571 notes = "epr observations of 100 interstitial carbon atom in
576 title = "{EPR} identification of the single-acceptor state of
577 interstitial carbon in silicon",
578 author = "G. D. Watkins L. W. Song",
579 journal = "Phys. Rev. B",
582 pages = "5759--5764",
586 doi = "10.1103/PhysRevB.42.5759",
587 publisher = "American Physical Society",
588 notes = "carbon diffusion in silicon",
592 author = "A K Tipping and R C Newman",
593 title = "The diffusion coefficient of interstitial carbon in
595 journal = "Semiconductor Science and Technology",
599 URL = "http://stacks.iop.org/0268-1242/2/315",
601 notes = "diffusion coefficient of carbon interstitials in
606 title = "Carbon incorporation into Si at high concentrations by
607 ion implantation and solid phase epitaxy",
608 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
609 Picraux and J. K. Watanabe and J. W. Mayer",
610 journal = "J. Appl. Phys.",
615 doi = "10.1063/1.360806",
616 notes = "strained silicon, carbon supersaturation",
619 @Article{laveant2002,
620 title = "Epitaxy of carbon-rich silicon with {MBE}",
621 author = "P. Laveant and G. Gerth and P. Werner and U.
623 journal = "Materials Science and Engineering B",
627 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
628 notes = "low c in si, tensile stress to compensate compressive
629 stress, avoid sic precipitation",
633 author = "P. Werner and S. Eichler and G. Mariani and R.
634 K{\"{o}}gler and W. Skorupa",
635 title = "Investigation of {C}[sub x]Si defects in {C} implanted
636 silicon by transmission electron microscopy",
639 journal = "Applied Physics Letters",
643 keywords = "silicon; ion implantation; carbon; crystal defects;
644 transmission electron microscopy; annealing; positron
645 annihilation; secondary ion mass spectroscopy; buried
646 layers; precipitation",
647 URL = "http://link.aip.org/link/?APL/70/252/1",
648 doi = "10.1063/1.118381",
649 notes = "si-c complexes, agglomerate, sic in si matrix, sic
654 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
655 Picraux and J. K. Watanabe and J. W. Mayer",
657 title = "Precipitation and relaxation in strained Si[sub 1 -
658 y]{C}[sub y]/Si heterostructures",
661 journal = "Journal of Applied Physics",
664 pages = "3656--3668",
665 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
666 URL = "http://link.aip.org/link/?JAP/76/3656/1",
667 doi = "10.1063/1.357429",
668 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
672 title = "Prospects for device implementation of wide band gap
674 author = "J. H. Edgar",
675 journal = "J. Mater. Res.",
680 doi = "10.1557/JMR.1992.0235",
681 notes = "properties wide band gap semiconductor, sic
685 @Article{zirkelbach2007,
686 title = "Monte Carlo simulation study of a selforganisation
687 process leading to ordered precipitate structures",
688 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
690 journal = "Nucl. Instr. and Meth. B",
697 doi = "doi:10.1016/j.nimb.2006.12.118",
698 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
702 @Article{zirkelbach2006,
703 title = "Monte-Carlo simulation study of the self-organization
704 of nanometric amorphous precipitates in regular arrays
705 during ion irradiation",
706 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
708 journal = "Nucl. Instr. and Meth. B",
715 doi = "doi:10.1016/j.nimb.2005.08.162",
716 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
720 @Article{zirkelbach2005,
721 title = "Modelling of a selforganization process leading to
722 periodic arrays of nanometric amorphous precipitates by
724 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
726 journal = "Comp. Mater. Sci.",
733 doi = "doi:10.1016/j.commatsci.2004.12.016",
734 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
739 title = "Controlling the density distribution of Si{C}
740 nanocrystals for the ion beam synthesis of buried Si{C}
742 journal = "Nuclear Instruments and Methods in Physics Research
743 Section B: Beam Interactions with Materials and Atoms",
750 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
751 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
752 author = "J. K. N. Lindner and B. Stritzker",
753 notes = "two-step implantation process",
756 @Article{lindner99_2,
757 title = "Mechanisms in the ion beam synthesis of Si{C} layers
759 journal = "Nuclear Instruments and Methods in Physics Research
760 Section B: Beam Interactions with Materials and Atoms",
767 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
768 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
769 author = "J. K. N. Lindner and B. Stritzker",
773 title = "Ion beam synthesis of buried Si{C} layers in silicon:
774 Basic physical processes",
775 journal = "Nuclear Instruments and Methods in Physics Research
776 Section B: Beam Interactions with Materials and Atoms",
783 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
784 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
785 author = "Jörg K. N. Lindner",
789 title = "High-dose carbon implantations into silicon:
790 fundamental studies for new technological tricks",
791 author = "J. K. N. Lindner",
792 journal = "Appl. Phys. A",
796 doi = "10.1007/s00339-002-2062-8",
797 notes = "ibs, burried sic layers",
801 author = "B. J. Alder and T. E. Wainwright",
802 title = "Phase Transition for a Hard Sphere System",
805 journal = "The Journal of Chemical Physics",
808 pages = "1208--1209",
809 URL = "http://link.aip.org/link/?JCP/27/1208/1",
810 doi = "10.1063/1.1743957",
814 author = "B. J. Alder and T. E. Wainwright",
815 title = "Studies in Molecular Dynamics. {I}. General Method",
818 journal = "The Journal of Chemical Physics",
822 URL = "http://link.aip.org/link/?JCP/31/459/1",
823 doi = "10.1063/1.1730376",
826 @Article{tersoff_si1,
827 title = "New empirical model for the structural properties of
829 author = "J. Tersoff",
830 journal = "Phys. Rev. Lett.",
837 doi = "10.1103/PhysRevLett.56.632",
838 publisher = "American Physical Society",
841 @Article{tersoff_si2,
842 title = "New empirical approach for the structure and energy of
844 author = "J. Tersoff",
845 journal = "Phys. Rev. B",
848 pages = "6991--7000",
852 doi = "10.1103/PhysRevB.37.6991",
853 publisher = "American Physical Society",
856 @Article{tersoff_si3,
857 title = "Empirical interatomic potential for silicon with
858 improved elastic properties",
859 author = "J. Tersoff",
860 journal = "Phys. Rev. B",
863 pages = "9902--9905",
867 doi = "10.1103/PhysRevB.38.9902",
868 publisher = "American Physical Society",
872 title = "Empirical Interatomic Potential for Carbon, with
873 Applications to Amorphous Carbon",
874 author = "J. Tersoff",
875 journal = "Phys. Rev. Lett.",
878 pages = "2879--2882",
882 doi = "10.1103/PhysRevLett.61.2879",
883 publisher = "American Physical Society",
887 title = "Modeling solid-state chemistry: Interatomic potentials
888 for multicomponent systems",
889 author = "J. Tersoff",
890 journal = "Phys. Rev. B",
893 pages = "5566--5568",
897 doi = "10.1103/PhysRevB.39.5566",
898 publisher = "American Physical Society",
902 title = "Carbon defects and defect reactions in silicon",
903 author = "J. Tersoff",
904 journal = "Phys. Rev. Lett.",
907 pages = "1757--1760",
911 doi = "10.1103/PhysRevLett.64.1757",
912 publisher = "American Physical Society",
916 title = "Point defects and dopant diffusion in silicon",
917 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
918 journal = "Rev. Mod. Phys.",
925 doi = "10.1103/RevModPhys.61.289",
926 publisher = "American Physical Society",
930 title = "Silicon carbide: synthesis and processing",
931 journal = "Nuclear Instruments and Methods in Physics Research
932 Section B: Beam Interactions with Materials and Atoms",
937 note = "Radiation Effects in Insulators",
939 doi = "DOI: 10.1016/0168-583X(96)00065-1",
940 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
945 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
946 Lin and B. Sverdlov and M. Burns",
948 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
949 ZnSe-based semiconductor device technologies",
952 journal = "Journal of Applied Physics",
955 pages = "1363--1398",
956 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
957 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
958 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
960 URL = "http://link.aip.org/link/?JAP/76/1363/1",
961 doi = "10.1063/1.358463",
965 author = "Noch Unbekannt",
966 title = "How to find references",
967 journal = "Journal of Applied References",
974 title = "Atomistic simulation of thermomechanical properties of
976 author = "Meijie Tang and Sidney Yip",
977 journal = "Phys. Rev. B",
980 pages = "15150--15159",
983 doi = "10.1103/PhysRevB.52.15150",
984 notes = "modified tersoff, scale cutoff with volume, promising
985 tersoff reparametrization",
986 publisher = "American Physical Society",
990 title = "Silicon carbide as a new {MEMS} technology",
991 journal = "Sensors and Actuators A: Physical",
997 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
998 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
999 author = "Pasqualina M. Sarro",
1001 keywords = "Silicon carbide",
1002 keywords = "Micromachining",
1003 keywords = "Mechanical stress",
1007 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1008 semiconductor for high-temperature applications: {A}
1010 journal = "Solid-State Electronics",
1013 pages = "1409--1422",
1016 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1017 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1018 author = "J. B. Casady and R. W. Johnson",
1021 @Article{giancarli98,
1022 title = "Design requirements for Si{C}/Si{C} composites
1023 structural material in fusion power reactor blankets",
1024 journal = "Fusion Engineering and Design",
1030 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1031 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1032 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1033 Marois and N. B. Morley and J. F. Salavy",
1037 title = "Electrical and optical characterization of Si{C}",
1038 journal = "Physica B: Condensed Matter",
1044 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1045 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1046 author = "G. Pensl and W. J. Choyke",
1050 title = "Investigation of growth processes of ingots of silicon
1051 carbide single crystals",
1052 journal = "Journal of Crystal Growth",
1057 notes = "modifief lely process",
1059 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1060 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1061 author = "Yu. M. Tairov and V. F. Tsvetkov",
1065 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1068 title = "Production of large-area single-crystal wafers of
1069 cubic Si{C} for semiconductor devices",
1072 journal = "Applied Physics Letters",
1076 keywords = "silicon carbides; layers; chemical vapor deposition;
1078 URL = "http://link.aip.org/link/?APL/42/460/1",
1079 doi = "10.1063/1.93970",
1080 notes = "cvd of 3c-sic on si, sic buffer layer",
1083 @Article{nishino:4889,
1084 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1085 and Hiroyuki Matsunami",
1087 title = "Epitaxial growth and electric characteristics of cubic
1091 journal = "Journal of Applied Physics",
1094 pages = "4889--4893",
1095 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1096 doi = "10.1063/1.338355",
1097 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1102 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1104 title = "Growth and Characterization of Cubic Si{C}
1105 Single-Crystal Films on Si",
1108 journal = "Journal of The Electrochemical Society",
1111 pages = "1558--1565",
1112 keywords = "semiconductor materials; silicon compounds; carbon
1113 compounds; crystal morphology; electron mobility",
1114 URL = "http://link.aip.org/link/?JES/134/1558/1",
1115 doi = "10.1149/1.2100708",
1116 notes = "blue light emitting diodes (led)",
1120 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1121 and Hiroyuki Matsunami",
1122 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1126 journal = "Journal of Applied Physics",
1130 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1131 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1133 URL = "http://link.aip.org/link/?JAP/73/726/1",
1134 doi = "10.1063/1.353329",
1135 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1139 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1140 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1141 Yoganathan and J. Yang and P. Pirouz",
1143 title = "Growth of improved quality 3{C}-Si{C} films on
1144 6{H}-Si{C} substrates",
1147 journal = "Applied Physics Letters",
1150 pages = "1353--1355",
1151 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1152 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1153 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1155 URL = "http://link.aip.org/link/?APL/56/1353/1",
1156 doi = "10.1063/1.102512",
1157 notes = "cvd of 3c-sic on 6h-sic",
1161 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1162 Thokala and M. J. Loboda",
1164 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1165 films on 6{H}-Si{C} by chemical vapor deposition from
1169 journal = "Journal of Applied Physics",
1172 pages = "1271--1273",
1173 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1174 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1176 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1177 doi = "10.1063/1.360368",
1178 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1182 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1183 [alpha]-Si{C}(0001) at low temperatures by solid-source
1184 molecular beam epitaxy",
1185 journal = "Journal of Crystal Growth",
1190 notes = "solid source mbe",
1192 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1193 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1194 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1199 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1201 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1205 journal = "Applied Physics Letters",
1209 URL = "http://link.aip.org/link/?APL/18/509/1",
1210 notes = "first time sic by ibs",
1211 doi = "10.1063/1.1653516",
1215 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1216 J. Davis and G. E. Celler",
1218 title = "Formation of buried layers of beta-Si{C} using ion
1219 beam synthesis and incoherent lamp annealing",
1222 journal = "Applied Physics Letters",
1225 pages = "2242--2244",
1226 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1227 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1228 URL = "http://link.aip.org/link/?APL/51/2242/1",
1229 doi = "10.1063/1.98953",
1230 notes = "nice tem images, sic by ibs",
1234 author = "R. I. Scace and G. A. Slack",
1236 title = "Solubility of Carbon in Silicon and Germanium",
1239 journal = "The Journal of Chemical Physics",
1242 pages = "1551--1555",
1243 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1244 doi = "10.1063/1.1730236",
1245 notes = "solubility of c in c-si",
1249 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1250 F. W. Saris and W. Vandervorst",
1252 title = "Role of {C} and {B} clusters in transient diffusion of
1256 journal = "Applied Physics Letters",
1259 pages = "1150--1152",
1260 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1261 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1263 URL = "http://link.aip.org/link/?APL/68/1150/1",
1264 doi = "10.1063/1.115706",
1265 notes = "suppression of transient enhanced diffusion (ted)",
1269 title = "Implantation and transient boron diffusion: the role
1270 of the silicon self-interstitial",
1271 journal = "Nuclear Instruments and Methods in Physics Research
1272 Section B: Beam Interactions with Materials and Atoms",
1277 note = "Selected Papers of the Tenth International Conference
1278 on Ion Implantation Technology (IIT '94)",
1280 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1281 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1282 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1287 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1288 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1289 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1292 title = "Physical mechanisms of transient enhanced dopant
1293 diffusion in ion-implanted silicon",
1296 journal = "Journal of Applied Physics",
1299 pages = "6031--6050",
1300 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1301 doi = "10.1063/1.364452",
1302 notes = "ted, transient enhanced diffusion, c silicon trap",
1306 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1308 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1309 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1312 journal = "Applied Physics Letters",
1316 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1317 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1318 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1320 URL = "http://link.aip.org/link/?APL/64/324/1",
1321 doi = "10.1063/1.111195",
1322 notes = "beta sic nano crystals in si, mbe, annealing",
1326 author = "Richard A. Soref",
1328 title = "Optical band gap of the ternary semiconductor Si[sub 1
1329 - x - y]Ge[sub x]{C}[sub y]",
1332 journal = "Journal of Applied Physics",
1335 pages = "2470--2472",
1336 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1337 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1339 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1340 doi = "10.1063/1.349403",
1341 notes = "band gap of strained si by c",
1345 author = "E Kasper",
1346 title = "Superlattices of group {IV} elements, a new
1347 possibility to produce direct band gap material",
1348 journal = "Physica Scripta",
1351 URL = "http://stacks.iop.org/1402-4896/T35/232",
1353 notes = "superlattices, convert indirect band gap into a
1358 author = "H. J. Osten and J. Griesche and S. Scalese",
1360 title = "Substitutional carbon incorporation in epitaxial
1361 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1362 molecular beam epitaxy",
1365 journal = "Applied Physics Letters",
1369 keywords = "molecular beam epitaxial growth; semiconductor growth;
1370 wide band gap semiconductors; interstitials; silicon
1372 URL = "http://link.aip.org/link/?APL/74/836/1",
1373 doi = "10.1063/1.123384",
1374 notes = "substitutional c in si",
1377 @Article{hohenberg64,
1378 title = "Inhomogeneous Electron Gas",
1379 author = "P. Hohenberg and W. Kohn",
1380 journal = "Phys. Rev.",
1383 pages = "B864--B871",
1387 doi = "10.1103/PhysRev.136.B864",
1388 publisher = "American Physical Society",
1389 notes = "density functional theory, dft",
1393 title = "Self-Consistent Equations Including Exchange and
1394 Correlation Effects",
1395 author = "W. Kohn and L. J. Sham",
1396 journal = "Phys. Rev.",
1399 pages = "A1133--A1138",
1403 doi = "10.1103/PhysRev.140.A1133",
1404 publisher = "American Physical Society",
1405 notes = "dft, exchange and correlation",
1409 title = "Strain-stabilized highly concentrated pseudomorphic
1410 $Si1-x$$Cx$ layers in Si",
1411 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1413 journal = "Phys. Rev. Lett.",
1416 pages = "3578--3581",
1420 doi = "10.1103/PhysRevLett.72.3578",
1421 publisher = "American Physical Society",
1422 notes = "high c concentration in si, heterostructure, starined
1427 title = "Electron Transport Model for Strained Silicon-Carbon
1429 author = "Shu-Tong Chang and Chung-Yi Lin",
1430 journal = "Japanese Journal of Applied Physics",
1433 pages = "2257--2262",
1436 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1437 doi = "10.1143/JJAP.44.2257",
1438 publisher = "The Japan Society of Applied Physics",
1439 notes = "enhance of electron mobility in starined si",
1443 author = "H. J. Osten and P. Gaworzewski",
1445 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1446 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1450 journal = "Journal of Applied Physics",
1453 pages = "4977--4981",
1454 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1455 semiconductors; semiconductor epitaxial layers; carrier
1456 density; Hall mobility; interstitials; defect states",
1457 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1458 doi = "10.1063/1.366364",
1459 notes = "charge transport in strained si",
1463 title = "Carbon-mediated aggregation of self-interstitials in
1464 silicon: {A} large-scale molecular dynamics study",
1465 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1466 journal = "Phys. Rev. B",
1473 doi = "10.1103/PhysRevB.69.155214",
1474 publisher = "American Physical Society",
1475 notes = "simulation using promising tersoff reparametrization",
1479 title = "Event-Based Relaxation of Continuous Disordered
1481 author = "G. T. Barkema and Normand Mousseau",
1482 journal = "Phys. Rev. Lett.",
1485 pages = "4358--4361",
1489 doi = "10.1103/PhysRevLett.77.4358",
1490 publisher = "American Physical Society",
1491 notes = "activation relaxation technique, art, speed up slow
1496 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1497 Minoukadeh and F. Willaime",
1499 title = "Some improvements of the activation-relaxation
1500 technique method for finding transition pathways on
1501 potential energy surfaces",
1504 journal = "The Journal of Chemical Physics",
1510 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1511 surfaces; vacancies (crystal)",
1512 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1513 doi = "10.1063/1.3088532",
1514 notes = "improvements to art, refs for methods to find
1515 transition pathways",
1518 @Article{parrinello81,
1519 author = "M. Parrinello and A. Rahman",
1521 title = "Polymorphic transitions in single crystals: {A} new
1522 molecular dynamics method",
1525 journal = "Journal of Applied Physics",
1528 pages = "7182--7190",
1529 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1530 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1531 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1532 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1533 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1535 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1536 doi = "10.1063/1.328693",
1539 @Article{stillinger85,
1540 title = "Computer simulation of local order in condensed phases
1542 author = "Frank H. Stillinger and Thomas A. Weber",
1543 journal = "Phys. Rev. B",
1546 pages = "5262--5271",
1550 doi = "10.1103/PhysRevB.31.5262",
1551 publisher = "American Physical Society",
1555 title = "Environment-dependent interatomic potential for bulk
1557 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1559 journal = "Phys. Rev. B",
1562 pages = "8542--8552",
1566 doi = "10.1103/PhysRevB.56.8542",
1567 publisher = "American Physical Society",
1571 title = "Interatomic potential for silicon defects and
1573 author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
1574 Kaxiras and V. V. Bulatov and Sidney Yip",
1575 journal = "Phys. Rev. B",
1578 pages = "2539--2550",
1582 doi = "10.1103/PhysRevB.58.2539",
1583 publisher = "American Physical Society",
1587 title = "{PARCAS} molecular dynamics code",
1588 author = "K. Nordlund",
1593 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1595 author = "Arthur F. Voter",
1596 journal = "Phys. Rev. Lett.",
1599 pages = "3908--3911",
1603 doi = "10.1103/PhysRevLett.78.3908",
1604 publisher = "American Physical Society",
1605 notes = "hyperdynamics, accelerated md",
1609 author = "Arthur F. Voter",
1611 title = "A method for accelerating the molecular dynamics
1612 simulation of infrequent events",
1615 journal = "The Journal of Chemical Physics",
1618 pages = "4665--4677",
1619 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1620 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1621 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1622 energy functions; surface diffusion; reaction kinetics
1623 theory; potential energy surfaces",
1624 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1625 doi = "10.1063/1.473503",
1626 notes = "improved hyperdynamics md",
1629 @Article{sorensen2000,
1630 author = "Mads R. S\o rensen and Arthur F. Voter",
1632 title = "Temperature-accelerated dynamics for simulation of
1636 journal = "The Journal of Chemical Physics",
1639 pages = "9599--9606",
1640 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1641 MOLECULAR DYNAMICS METHOD; surface diffusion",
1642 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1643 doi = "10.1063/1.481576",
1644 notes = "temperature accelerated dynamics, tad",
1648 title = "Parallel replica method for dynamics of infrequent
1650 author = "Arthur F. Voter",
1651 journal = "Phys. Rev. B",
1654 pages = "R13985--R13988",
1658 doi = "10.1103/PhysRevB.57.R13985",
1659 publisher = "American Physical Society",
1660 notes = "parallel replica method, accelerated md",
1664 author = "Xiongwu Wu and Shaomeng Wang",
1666 title = "Enhancing systematic motion in molecular dynamics
1670 journal = "The Journal of Chemical Physics",
1673 pages = "9401--9410",
1674 keywords = "molecular dynamics method; argon; Lennard-Jones
1675 potential; crystallisation; liquid theory",
1676 URL = "http://link.aip.org/link/?JCP/110/9401/1",
1677 doi = "10.1063/1.478948",
1678 notes = "self guided md, sgmd, accelerated md, enhancing
1682 @Article{choudhary05,
1683 author = "Devashish Choudhary and Paulette Clancy",
1685 title = "Application of accelerated molecular dynamics schemes
1686 to the production of amorphous silicon",
1689 journal = "The Journal of Chemical Physics",
1695 keywords = "molecular dynamics method; silicon; glass structure;
1696 amorphous semiconductors",
1697 URL = "http://link.aip.org/link/?JCP/122/154509/1",
1698 doi = "10.1063/1.1878733",
1699 notes = "explanation of sgmd and hyper md, applied to amorphous
1704 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
1706 title = "Carbon precipitation in silicon: Why is it so
1710 journal = "Applied Physics Letters",
1713 pages = "3336--3338",
1714 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
1715 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
1717 URL = "http://link.aip.org/link/?APL/62/3336/1",
1718 doi = "10.1063/1.109063",
1719 notes = "interfacial energy of cubic sic and si",
1722 @Article{chaussende08,
1723 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
1724 journal = "Journal of Crystal Growth",
1729 note = "Proceedings of the E-MRS Conference, Symposium G -
1730 Substrates of Wide Bandgap Materials",
1732 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
1733 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
1734 author = "D. Chaussende and F. Mercier and A. Boulle and F.
1735 Conchon and M. Soueidan and G. Ferro and A. Mantzari
1736 and A. Andreadou and E. K. Polychroniadis and C.
1737 Balloud and S. Juillaguet and J. Camassel and M. Pons",
1738 notes = "3c-sic crystal growth, sic fabrication + links,
1743 title = "Forces in Molecules",
1744 author = "R. P. Feynman",
1745 journal = "Phys. Rev.",
1752 doi = "10.1103/PhysRev.56.340",
1753 publisher = "American Physical Society",
1754 notes = "hellmann feynman forces",
1758 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
1759 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
1760 their Contrasting Properties",
1761 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
1763 journal = "Phys. Rev. Lett.",
1770 doi = "10.1103/PhysRevLett.84.943",
1771 publisher = "American Physical Society",
1772 notes = "si sio2 and sic sio2 interface",
1775 @Article{djurabekova08,
1776 title = "Atomistic simulation of the interface structure of Si
1777 nanocrystals embedded in amorphous silica",
1778 author = "Flyura Djurabekova and Kai Nordlund",
1779 journal = "Phys. Rev. B",
1786 doi = "10.1103/PhysRevB.77.115325",
1787 publisher = "American Physical Society",
1788 notes = "nc-si in sio2, interface energy, nc construction,
1789 angular distribution, coordination",
1792 @Article{wen:073522,
1793 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
1794 W. Liang and J. Zou",
1796 title = "Nature of interfacial defects and their roles in
1797 strain relaxation at highly lattice mismatched
1798 3{C}-Si{C}/Si (001) interface",
1801 journal = "Journal of Applied Physics",
1807 keywords = "anelastic relaxation; crystal structure; dislocations;
1808 elemental semiconductors; semiconductor growth;
1809 semiconductor thin films; silicon; silicon compounds;
1810 stacking faults; wide band gap semiconductors",
1811 URL = "http://link.aip.org/link/?JAP/106/073522/1",
1812 doi = "10.1063/1.3234380",
1813 notes = "sic/si interface, follow refs",
1816 @Article{kitabatake93,
1817 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
1820 title = "Simulations and experiments of Si{C} heteroepitaxial
1821 growth on Si(001) surface",
1824 journal = "Journal of Applied Physics",
1827 pages = "4438--4445",
1828 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
1829 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
1830 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
1831 URL = "http://link.aip.org/link/?JAP/74/4438/1",
1832 doi = "10.1063/1.354385",
1833 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
1837 @Article{pizzagalli03,
1838 title = "Theoretical investigations of a highly mismatched
1839 interface: Si{C}/Si(001)",
1840 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
1842 journal = "Phys. Rev. B",
1849 doi = "10.1103/PhysRevB.68.195302",
1850 publisher = "American Physical Society",
1851 notes = "tersoff md and ab initio sic/si interface study",