2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 author = "Henri Moissan",
187 title = "Nouvelles recherches sur la météorité de Cañon
189 journal = "Comptes rendus de l'Académie des Sciences",
196 author = "Y. S. Park",
197 title = "Si{C} Materials and Devices",
198 publisher = "Academic Press",
199 address = "San Diego",
204 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
205 Calvin H. Carter Jr. and D. Asbury",
206 title = "Si{C} Seeded Boule Growth",
207 journal = "Materials Science Forum",
211 notes = "modified lely process, micropipes",
215 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
216 Thermodynamical Properties of Lennard-Jones Molecules",
217 author = "Loup Verlet",
218 journal = "Phys. Rev.",
224 doi = "10.1103/PhysRev.159.98",
225 publisher = "American Physical Society",
226 notes = "velocity verlet integration algorithm equation of
230 @Article{berendsen84,
231 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
232 Gunsteren and A. DiNola and J. R. Haak",
234 title = "Molecular dynamics with coupling to an external bath",
237 journal = "J. Chem. Phys.",
240 pages = "3684--3690",
241 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
242 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
243 URL = "http://link.aip.org/link/?JCP/81/3684/1",
244 doi = "10.1063/1.448118",
245 notes = "berendsen thermostat barostat",
249 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
251 title = "Molecular dynamics determination of defect energetics
252 in beta -Si{C} using three representative empirical
254 journal = "Modell. Simul. Mater. Sci. Eng.",
258 URL = "http://stacks.iop.org/0965-0393/3/615",
259 notes = "comparison of tersoff, pearson and eam for defect
260 energetics in sic; (m)eam parameters for sic",
265 title = "Relationship between the embedded-atom method and
267 author = "Donald W. Brenner",
268 journal = "Phys. Rev. Lett.",
275 doi = "10.1103/PhysRevLett.63.1022",
276 publisher = "American Physical Society",
277 notes = "relation of tersoff and eam potential",
281 title = "Molecular-dynamics study of self-interstitials in
283 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
284 journal = "Phys. Rev. B",
287 pages = "9552--9558",
291 doi = "10.1103/PhysRevB.35.9552",
292 publisher = "American Physical Society",
293 notes = "selft-interstitials in silicon, stillinger-weber,
294 calculation of defect formation energy, defect
299 title = "Extended interstitials in silicon and germanium",
300 author = "H. R. Schober",
301 journal = "Phys. Rev. B",
304 pages = "13013--13015",
308 doi = "10.1103/PhysRevB.39.13013",
309 publisher = "American Physical Society",
310 notes = "stillinger-weber silicon 110 stable and metastable
311 dumbbell configuration",
315 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
316 Defect accumulation, topological features, and
318 author = "F. Gao and W. J. Weber",
319 journal = "Phys. Rev. B",
326 doi = "10.1103/PhysRevB.66.024106",
327 publisher = "American Physical Society",
328 notes = "sic intro, si cascade in 3c-sic, amorphization,
329 tersoff modified, pair correlation of amorphous sic, md
333 @Article{devanathan98,
334 title = "Computer simulation of a 10 ke{V} Si displacement
336 journal = "Nucl. Instrum. Methods Phys. Res. B",
342 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
343 author = "R. Devanathan and W. J. Weber and T. Diaz de la
345 notes = "modified tersoff short range potential, ab initio
349 @Article{devanathan98_2,
350 title = "Displacement threshold energies in [beta]-Si{C}",
351 journal = "J. Nucl. Mater.",
357 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
358 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
360 notes = "modified tersoff, ab initio, combined ab initio
364 @Article{kitabatake00,
365 title = "Si{C}/Si heteroepitaxial growth",
366 author = "M. Kitabatake",
367 journal = "Thin Solid Films",
372 notes = "md simulation, sic si heteroepitaxy, mbe",
376 title = "Intrinsic point defects in crystalline silicon:
377 Tight-binding molecular dynamics studies of
378 self-diffusion, interstitial-vacancy recombination, and
380 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
382 journal = "Phys. Rev. B",
385 pages = "14279--14289",
389 doi = "10.1103/PhysRevB.55.14279",
390 publisher = "American Physical Society",
391 notes = "si self interstitial, diffusion, tbmd",
395 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
398 title = "A kinetic Monte--Carlo study of the effective
399 diffusivity of the silicon self-interstitial in the
400 presence of carbon and boron",
403 journal = "J. Appl. Phys.",
406 pages = "1963--1967",
407 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
408 CARBON ADDITIONS; BORON ADDITIONS; elemental
409 semiconductors; self-diffusion",
410 URL = "http://link.aip.org/link/?JAP/84/1963/1",
411 doi = "10.1063/1.368328",
412 notes = "kinetic monte carlo of si self interstitial
417 title = "Barrier to Migration of the Silicon
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. Lett.",
423 pages = "1129--1132",
427 doi = "10.1103/PhysRevLett.52.1129",
428 publisher = "American Physical Society",
429 notes = "si self-interstitial migration barrier",
432 @Article{bar-yam84_2,
433 title = "Electronic structure and total-energy migration
434 barriers of silicon self-interstitials",
435 author = "Y. Bar-Yam and J. D. Joannopoulos",
436 journal = "Phys. Rev. B",
439 pages = "1844--1852",
443 doi = "10.1103/PhysRevB.30.1844",
444 publisher = "American Physical Society",
448 title = "First-principles calculations of self-diffusion
449 constants in silicon",
450 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
451 and D. B. Laks and W. Andreoni and S. T. Pantelides",
452 journal = "Phys. Rev. Lett.",
455 pages = "2435--2438",
459 doi = "10.1103/PhysRevLett.70.2435",
460 publisher = "American Physical Society",
461 notes = "si self int diffusion by ab initio md, formation
462 entropy calculations",
466 title = "Tight-binding theory of native point defects in
468 author = "L. Colombo",
469 journal = "Annu. Rev. Mater. Res.",
474 doi = "10.1146/annurev.matsci.32.111601.103036",
475 publisher = "Annual Reviews",
476 notes = "si self interstitial, tbmd, virial stress",
479 @Article{al-mushadani03,
480 title = "Free-energy calculations of intrinsic point defects in
482 author = "O. K. Al-Mushadani and R. J. Needs",
483 journal = "Phys. Rev. B",
490 doi = "10.1103/PhysRevB.68.235205",
491 publisher = "American Physical Society",
492 notes = "formation energies of intrinisc point defects in
493 silicon, si self interstitials, free energy",
496 @Article{goedecker02,
497 title = "A Fourfold Coordinated Point Defect in Silicon",
498 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
499 journal = "Phys. Rev. Lett.",
506 doi = "10.1103/PhysRevLett.88.235501",
507 publisher = "American Physical Society",
508 notes = "first time ffcd, fourfold coordinated point defect in
513 title = "Ab initio molecular dynamics simulation of
514 self-interstitial diffusion in silicon",
515 author = "Beat Sahli and Wolfgang Fichtner",
516 journal = "Phys. Rev. B",
523 doi = "10.1103/PhysRevB.72.245210",
524 publisher = "American Physical Society",
525 notes = "si self int, diffusion, barrier height, voronoi
530 title = "Ab initio calculations of the interaction between
531 native point defects in silicon",
532 journal = "Mater. Sci. Eng., B",
537 note = "EMRS 2005, Symposium D - Materials Science and Device
538 Issues for Future Technologies",
540 doi = "DOI: 10.1016/j.mseb.2005.08.072",
541 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
542 author = "G. Hobler and G. Kresse",
543 notes = "vasp intrinsic si defect interaction study, capture
548 title = "Ab initio study of self-diffusion in silicon over a
549 wide temperature range: Point defect states and
550 migration mechanisms",
551 author = "Shangyi Ma and Shaoqing Wang",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.81.193203",
560 publisher = "American Physical Society",
561 notes = "si self interstitial diffusion + refs",
565 title = "Atomistic simulations on the thermal stability of the
566 antisite pair in 3{C}- and 4{H}-Si{C}",
567 author = "M. Posselt and F. Gao and W. J. Weber",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.73.125206",
576 publisher = "American Physical Society",
580 title = "Correlation between self-diffusion in Si and the
581 migration mechanisms of vacancies and
582 self-interstitials: An atomistic study",
583 author = "M. Posselt and F. Gao and H. Bracht",
584 journal = "Phys. Rev. B",
591 doi = "10.1103/PhysRevB.78.035208",
592 publisher = "American Physical Society",
593 notes = "si self-interstitial and vacancy diffusion, stillinger
598 title = "Ab initio and empirical-potential studies of defect
599 properties in $3{C}-Si{C}$",
600 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
602 journal = "Phys. Rev. B",
609 doi = "10.1103/PhysRevB.64.245208",
610 publisher = "American Physical Society",
611 notes = "defects in 3c-sic",
615 title = "Empirical potential approach for defect properties in
617 journal = "Nucl. Instrum. Methods Phys. Res. B",
624 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
625 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
626 author = "Fei Gao and William J. Weber",
627 keywords = "Empirical potential",
628 keywords = "Defect properties",
629 keywords = "Silicon carbide",
630 keywords = "Computer simulation",
631 notes = "sic potential, brenner type, like erhart/albe",
635 title = "Atomistic study of intrinsic defect migration in
637 author = "Fei Gao and William J. Weber and M. Posselt and V.
639 journal = "Phys. Rev. B",
646 doi = "10.1103/PhysRevB.69.245205",
647 publisher = "American Physical Society",
648 notes = "defect migration in sic",
652 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
655 title = "Ab Initio atomic simulations of antisite pair recovery
656 in cubic silicon carbide",
659 journal = "Appl. Phys. Lett.",
665 keywords = "ab initio calculations; silicon compounds; antisite
666 defects; wide band gap semiconductors; molecular
667 dynamics method; density functional theory;
668 electron-hole recombination; photoluminescence;
669 impurities; diffusion",
670 URL = "http://link.aip.org/link/?APL/90/221915/1",
671 doi = "10.1063/1.2743751",
674 @Article{mattoni2002,
675 title = "Self-interstitial trapping by carbon complexes in
676 crystalline silicon",
677 author = "A. Mattoni and F. Bernardini and L. Colombo",
678 journal = "Phys. Rev. B",
685 doi = "10.1103/PhysRevB.66.195214",
686 publisher = "American Physical Society",
687 notes = "c in c-si, diffusion, interstitial configuration +
688 links, interaction of carbon and silicon interstitials,
689 tersoff suitability",
693 title = "Calculations of Silicon Self-Interstitial Defects",
694 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
696 journal = "Phys. Rev. Lett.",
699 pages = "2351--2354",
703 doi = "10.1103/PhysRevLett.83.2351",
704 publisher = "American Physical Society",
705 notes = "nice images of the defects, si defect overview +
710 title = "Identification of the migration path of interstitial
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "7439--7442",
720 doi = "10.1103/PhysRevB.50.7439",
721 publisher = "American Physical Society",
722 notes = "carbon interstitial migration path shown, 001 c-si
727 title = "Theory of carbon-carbon pairs in silicon",
728 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
729 journal = "Phys. Rev. B",
732 pages = "9845--9850",
736 doi = "10.1103/PhysRevB.58.9845",
737 publisher = "American Physical Society",
738 notes = "c_i c_s pair configuration, theoretical results",
742 title = "Bistable interstitial-carbon--substitutional-carbon
744 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
746 journal = "Phys. Rev. B",
749 pages = "5765--5783",
753 doi = "10.1103/PhysRevB.42.5765",
754 publisher = "American Physical Society",
755 notes = "c_i c_s pair configuration, experimental results",
759 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
760 Shifeng Lu and Xiang-Yang Liu",
762 title = "Ab initio modeling and experimental study of {C}--{B}
766 journal = "Appl. Phys. Lett.",
770 keywords = "silicon; boron; carbon; elemental semiconductors;
771 impurity-defect interactions; ab initio calculations;
772 secondary ion mass spectra; diffusion; interstitials",
773 URL = "http://link.aip.org/link/?APL/80/52/1",
774 doi = "10.1063/1.1430505",
775 notes = "c-c 100 split, lower as a and b states of capaz",
779 title = "Ab initio investigation of carbon-related defects in
781 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
783 journal = "Phys. Rev. B",
786 pages = "12554--12557",
790 doi = "10.1103/PhysRevB.47.12554",
791 publisher = "American Physical Society",
792 notes = "c interstitials in crystalline silicon",
796 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
798 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
799 Sokrates T. Pantelides",
800 journal = "Phys. Rev. Lett.",
803 pages = "1814--1817",
807 doi = "10.1103/PhysRevLett.52.1814",
808 publisher = "American Physical Society",
809 notes = "microscopic theory diffusion silicon dft migration
814 title = "Unified Approach for Molecular Dynamics and
815 Density-Functional Theory",
816 author = "R. Car and M. Parrinello",
817 journal = "Phys. Rev. Lett.",
820 pages = "2471--2474",
824 doi = "10.1103/PhysRevLett.55.2471",
825 publisher = "American Physical Society",
826 notes = "car parrinello method, dft and md",
830 title = "Short-range order, bulk moduli, and physical trends in
831 c-$Si1-x$$Cx$ alloys",
832 author = "P. C. Kelires",
833 journal = "Phys. Rev. B",
836 pages = "8784--8787",
840 doi = "10.1103/PhysRevB.55.8784",
841 publisher = "American Physical Society",
842 notes = "c strained si, montecarlo md, bulk moduli, next
847 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
848 Application to the $Si1-x-yGexCy$ System",
849 author = "P. C. Kelires",
850 journal = "Phys. Rev. Lett.",
853 pages = "1114--1117",
857 doi = "10.1103/PhysRevLett.75.1114",
858 publisher = "American Physical Society",
859 notes = "mc md, strain compensation in si ge by c insertion",
863 title = "Low temperature electron irradiation of silicon
865 journal = "Solid State Communications",
872 doi = "DOI: 10.1016/0038-1098(70)90074-8",
873 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
874 author = "A. R. Bean and R. C. Newman",
878 title = "{EPR} Observation of the Isolated Interstitial Carbon
880 author = "G. D. Watkins and K. L. Brower",
881 journal = "Phys. Rev. Lett.",
884 pages = "1329--1332",
888 doi = "10.1103/PhysRevLett.36.1329",
889 publisher = "American Physical Society",
890 notes = "epr observations of 100 interstitial carbon atom in
895 title = "{EPR} identification of the single-acceptor state of
896 interstitial carbon in silicon",
897 author = "L. W. Song and G. D. Watkins",
898 journal = "Phys. Rev. B",
901 pages = "5759--5764",
905 doi = "10.1103/PhysRevB.42.5759",
906 publisher = "American Physical Society",
907 notes = "carbon diffusion in silicon",
911 author = "A K Tipping and R C Newman",
912 title = "The diffusion coefficient of interstitial carbon in
914 journal = "Semicond. Sci. Technol.",
918 URL = "http://stacks.iop.org/0268-1242/2/315",
920 notes = "diffusion coefficient of carbon interstitials in
925 title = "Carbon incorporation into Si at high concentrations by
926 ion implantation and solid phase epitaxy",
927 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
928 Picraux and J. K. Watanabe and J. W. Mayer",
929 journal = "J. Appl. Phys.",
934 doi = "10.1063/1.360806",
935 notes = "strained silicon, carbon supersaturation",
938 @Article{laveant2002,
939 title = "Epitaxy of carbon-rich silicon with {MBE}",
940 journal = "Mater. Sci. Eng., B",
946 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
947 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
948 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
950 notes = "low c in si, tensile stress to compensate compressive
951 stress, avoid sic precipitation",
955 author = "P. Werner and S. Eichler and G. Mariani and R.
956 K{\"{o}}gler and W. Skorupa",
957 title = "Investigation of {C}[sub x]Si defects in {C} implanted
958 silicon by transmission electron microscopy",
961 journal = "Appl. Phys. Lett.",
965 keywords = "silicon; ion implantation; carbon; crystal defects;
966 transmission electron microscopy; annealing; positron
967 annihilation; secondary ion mass spectroscopy; buried
968 layers; precipitation",
969 URL = "http://link.aip.org/link/?APL/70/252/1",
970 doi = "10.1063/1.118381",
971 notes = "si-c complexes, agglomerate, sic in si matrix, sic
975 @InProceedings{werner96,
976 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
978 booktitle = "Ion Implantation Technology. Proceedings of the 11th
979 International Conference on",
980 title = "{TEM} investigation of {C}-Si defects in carbon
987 doi = "10.1109/IIT.1996.586497",
989 notes = "c-si agglomerates dumbbells",
993 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
996 title = "Carbon diffusion in silicon",
999 journal = "Appl. Phys. Lett.",
1002 pages = "2465--2467",
1003 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1004 secondary ion mass spectra; semiconductor epitaxial
1005 layers; annealing; impurity-defect interactions;
1006 impurity distribution",
1007 URL = "http://link.aip.org/link/?APL/73/2465/1",
1008 doi = "10.1063/1.122483",
1009 notes = "c diffusion in si, kick out mechnism",
1013 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1014 Picraux and J. K. Watanabe and J. W. Mayer",
1016 title = "Precipitation and relaxation in strained Si[sub 1 -
1017 y]{C}[sub y]/Si heterostructures",
1020 journal = "J. Appl. Phys.",
1023 pages = "3656--3668",
1024 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1025 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1026 doi = "10.1063/1.357429",
1027 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1028 precipitation by substitutional carbon, coherent prec,
1029 coherent to incoherent transition strain vs interface
1034 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1037 title = "Investigation of the high temperature behavior of
1038 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1041 journal = "J. Appl. Phys.",
1044 pages = "1934--1937",
1045 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1046 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1047 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1048 TEMPERATURE RANGE 04001000 K",
1049 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1050 doi = "10.1063/1.358826",
1054 title = "Prospects for device implementation of wide band gap
1056 author = "J. H. Edgar",
1057 journal = "J. Mater. Res.",
1062 doi = "10.1557/JMR.1992.0235",
1063 notes = "properties wide band gap semiconductor, sic
1067 @Article{zirkelbach2007,
1068 title = "Monte Carlo simulation study of a selforganisation
1069 process leading to ordered precipitate structures",
1070 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1072 journal = "Nucl. Instr. and Meth. B",
1079 doi = "doi:10.1016/j.nimb.2006.12.118",
1080 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1084 @Article{zirkelbach2006,
1085 title = "Monte-Carlo simulation study of the self-organization
1086 of nanometric amorphous precipitates in regular arrays
1087 during ion irradiation",
1088 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1090 journal = "Nucl. Instr. and Meth. B",
1097 doi = "doi:10.1016/j.nimb.2005.08.162",
1098 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1102 @Article{zirkelbach2005,
1103 title = "Modelling of a selforganization process leading to
1104 periodic arrays of nanometric amorphous precipitates by
1106 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1108 journal = "Comp. Mater. Sci.",
1115 doi = "doi:10.1016/j.commatsci.2004.12.016",
1116 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1120 @Article{zirkelbach09,
1121 title = "Molecular dynamics simulation of defect formation and
1122 precipitation in heavily carbon doped silicon",
1123 journal = "Mater. Sci. Eng., B",
1128 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1129 Silicon Materials Research for Electronic and
1130 Photovoltaic Applications",
1132 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1133 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1134 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1136 keywords = "Silicon",
1137 keywords = "Carbon",
1138 keywords = "Silicon carbide",
1139 keywords = "Nucleation",
1140 keywords = "Defect formation",
1141 keywords = "Molecular dynamics simulations",
1144 @Article{zirkelbach10a,
1145 title = "Defects in carbon implanted silicon calculated by
1146 classical potentials and first-principles methods",
1147 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1148 K. N. Lindner and W. G. Schmidt and E. Rauls",
1149 journal = "Phys. Rev. B",
1156 doi = "10.1103/PhysRevB.82.094110",
1157 publisher = "American Physical Society",
1160 @Article{zirkelbach10b,
1161 title = "First principles study of defects in carbon implanted
1163 journal = "to be published",
1168 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1169 K. N. Lindner and W. G. Schmidt and E. Rauls",
1172 @Article{zirkelbach10c,
1174 journal = "to be published",
1179 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1180 K. N. Lindner and W. G. Schmidt and E. Rauls",
1184 title = "Controlling the density distribution of Si{C}
1185 nanocrystals for the ion beam synthesis of buried Si{C}
1187 journal = "Nucl. Instrum. Methods Phys. Res. B",
1194 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1195 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1196 author = "J. K. N. Lindner and B. Stritzker",
1197 notes = "two-step implantation process",
1200 @Article{lindner99_2,
1201 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1203 journal = "Nucl. Instrum. Methods Phys. Res. B",
1209 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1210 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1211 author = "J. K. N. Lindner and B. Stritzker",
1212 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1216 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1217 Basic physical processes",
1218 journal = "Nucl. Instrum. Methods Phys. Res. B",
1225 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1226 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1227 author = "J{\"{o}}rg K. N. Lindner",
1231 title = "High-dose carbon implantations into silicon:
1232 fundamental studies for new technological tricks",
1233 author = "J. K. N. Lindner",
1234 journal = "Appl. Phys. A",
1238 doi = "10.1007/s00339-002-2062-8",
1239 notes = "ibs, burried sic layers",
1243 title = "On the balance between ion beam induced nanoparticle
1244 formation and displacive precipitate resolution in the
1246 journal = "Mater. Sci. Eng., C",
1251 note = "Current Trends in Nanoscience - from Materials to
1254 doi = "DOI: 10.1016/j.msec.2005.09.099",
1255 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1256 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1258 notes = "c int diffusion barrier",
1262 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1263 application in buffer layer for Ga{N} epitaxial
1265 journal = "Applied Surface Science",
1270 note = "APHYS'03 Special Issue",
1272 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1273 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1274 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1275 and S. Nishio and K. Yasuda and Y. Ishigami",
1276 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1279 @Article{yamamoto04,
1280 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1281 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1282 implantation into Si(1 1 1) substrate",
1283 journal = "Journal of Crystal Growth",
1288 note = "Proceedings of the 11th Biennial (US) Workshop on
1289 Organometallic Vapor Phase Epitaxy (OMVPE)",
1291 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1292 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1293 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1294 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1295 notes = "gan on 3c-sic",
1299 title = "Substrates for gallium nitride epitaxy",
1300 journal = "Materials Science and Engineering: R: Reports",
1307 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1308 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1309 author = "L. Liu and J. H. Edgar",
1310 notes = "gan substrates",
1313 @Article{takeuchi91,
1314 title = "Growth of single crystalline Ga{N} film on Si
1315 substrate using 3{C}-Si{C} as an intermediate layer",
1316 journal = "Journal of Crystal Growth",
1323 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1325 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1326 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1327 notes = "gan on 3c-sic (first time?)",
1331 author = "B. J. Alder and T. E. Wainwright",
1332 title = "Phase Transition for a Hard Sphere System",
1335 journal = "J. Chem. Phys.",
1338 pages = "1208--1209",
1339 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1340 doi = "10.1063/1.1743957",
1344 author = "B. J. Alder and T. E. Wainwright",
1345 title = "Studies in Molecular Dynamics. {I}. General Method",
1348 journal = "J. Chem. Phys.",
1352 URL = "http://link.aip.org/link/?JCP/31/459/1",
1353 doi = "10.1063/1.1730376",
1356 @Article{tersoff_si1,
1357 title = "New empirical model for the structural properties of
1359 author = "J. Tersoff",
1360 journal = "Phys. Rev. Lett.",
1367 doi = "10.1103/PhysRevLett.56.632",
1368 publisher = "American Physical Society",
1371 @Article{tersoff_si2,
1372 title = "New empirical approach for the structure and energy of
1374 author = "J. Tersoff",
1375 journal = "Phys. Rev. B",
1378 pages = "6991--7000",
1382 doi = "10.1103/PhysRevB.37.6991",
1383 publisher = "American Physical Society",
1386 @Article{tersoff_si3,
1387 title = "Empirical interatomic potential for silicon with
1388 improved elastic properties",
1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. B",
1393 pages = "9902--9905",
1397 doi = "10.1103/PhysRevB.38.9902",
1398 publisher = "American Physical Society",
1402 title = "Empirical Interatomic Potential for Carbon, with
1403 Applications to Amorphous Carbon",
1404 author = "J. Tersoff",
1405 journal = "Phys. Rev. Lett.",
1408 pages = "2879--2882",
1412 doi = "10.1103/PhysRevLett.61.2879",
1413 publisher = "American Physical Society",
1417 title = "Modeling solid-state chemistry: Interatomic potentials
1418 for multicomponent systems",
1419 author = "J. Tersoff",
1420 journal = "Phys. Rev. B",
1423 pages = "5566--5568",
1427 doi = "10.1103/PhysRevB.39.5566",
1428 publisher = "American Physical Society",
1432 title = "Carbon defects and defect reactions in silicon",
1433 author = "J. Tersoff",
1434 journal = "Phys. Rev. Lett.",
1437 pages = "1757--1760",
1441 doi = "10.1103/PhysRevLett.64.1757",
1442 publisher = "American Physical Society",
1446 title = "Point defects and dopant diffusion in silicon",
1447 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1448 journal = "Rev. Mod. Phys.",
1455 doi = "10.1103/RevModPhys.61.289",
1456 publisher = "American Physical Society",
1460 title = "Silicon carbide: synthesis and processing",
1461 journal = "Nucl. Instrum. Methods Phys. Res. B",
1466 note = "Radiation Effects in Insulators",
1468 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1469 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1470 author = "W. Wesch",
1474 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1475 Lin and B. Sverdlov and M. Burns",
1477 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1478 ZnSe-based semiconductor device technologies",
1481 journal = "J. Appl. Phys.",
1484 pages = "1363--1398",
1485 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1486 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1487 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1489 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1490 doi = "10.1063/1.358463",
1491 notes = "sic intro, properties",
1495 author = "Noch Unbekannt",
1496 title = "How to find references",
1497 journal = "Journal of Applied References",
1504 title = "Atomistic simulation of thermomechanical properties of
1506 author = "Meijie Tang and Sidney Yip",
1507 journal = "Phys. Rev. B",
1510 pages = "15150--15159",
1513 doi = "10.1103/PhysRevB.52.15150",
1514 notes = "modified tersoff, scale cutoff with volume, promising
1515 tersoff reparametrization",
1516 publisher = "American Physical Society",
1520 title = "Silicon carbide as a new {MEMS} technology",
1521 journal = "Sensors and Actuators A: Physical",
1527 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1528 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1529 author = "Pasqualina M. Sarro",
1531 keywords = "Silicon carbide",
1532 keywords = "Micromachining",
1533 keywords = "Mechanical stress",
1537 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1538 semiconductor for high-temperature applications: {A}
1540 journal = "Solid-State Electronics",
1543 pages = "1409--1422",
1546 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1547 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1548 author = "J. B. Casady and R. W. Johnson",
1549 notes = "sic intro",
1552 @Article{giancarli98,
1553 title = "Design requirements for Si{C}/Si{C} composites
1554 structural material in fusion power reactor blankets",
1555 journal = "Fusion Engineering and Design",
1561 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1562 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1563 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1564 Marois and N. B. Morley and J. F. Salavy",
1568 title = "Electrical and optical characterization of Si{C}",
1569 journal = "Physica B: Condensed Matter",
1575 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1576 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1577 author = "G. Pensl and W. J. Choyke",
1581 title = "Investigation of growth processes of ingots of silicon
1582 carbide single crystals",
1583 journal = "J. Cryst. Growth",
1588 notes = "modified lely process",
1590 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1591 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1592 author = "Yu. M. Tairov and V. F. Tsvetkov",
1596 title = "General principles of growing large-size single
1597 crystals of various silicon carbide polytypes",
1598 journal = "Journal of Crystal Growth",
1605 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1606 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1607 author = "Yu.M. Tairov and V. F. Tsvetkov",
1611 title = "Si{C} boule growth by sublimation vapor transport",
1612 journal = "Journal of Crystal Growth",
1619 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1620 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1621 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1622 R. H. Hopkins and W. J. Choyke",
1626 title = "Growth of large Si{C} single crystals",
1627 journal = "Journal of Crystal Growth",
1634 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1635 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1636 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1637 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1642 title = "Control of polytype formation by surface energy
1643 effects during the growth of Si{C} monocrystals by the
1644 sublimation method",
1645 journal = "Journal of Crystal Growth",
1652 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1653 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1654 author = "R. A. Stein and P. Lanig",
1655 notes = "6h and 4h, sublimation technique",
1659 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1662 title = "Production of large-area single-crystal wafers of
1663 cubic Si{C} for semiconductor devices",
1666 journal = "Appl. Phys. Lett.",
1670 keywords = "silicon carbides; layers; chemical vapor deposition;
1672 URL = "http://link.aip.org/link/?APL/42/460/1",
1673 doi = "10.1063/1.93970",
1674 notes = "cvd of 3c-sic on si, sic buffer layer",
1678 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1679 and Hiroyuki Matsunami",
1681 title = "Epitaxial growth and electric characteristics of cubic
1685 journal = "J. Appl. Phys.",
1688 pages = "4889--4893",
1689 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1690 doi = "10.1063/1.338355",
1691 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1696 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1698 title = "Growth and Characterization of Cubic Si{C}
1699 Single-Crystal Films on Si",
1702 journal = "Journal of The Electrochemical Society",
1705 pages = "1558--1565",
1706 keywords = "semiconductor materials; silicon compounds; carbon
1707 compounds; crystal morphology; electron mobility",
1708 URL = "http://link.aip.org/link/?JES/134/1558/1",
1709 doi = "10.1149/1.2100708",
1710 notes = "blue light emitting diodes (led)",
1713 @Article{powell87_2,
1714 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
1715 C. M. Chorey and T. T. Cheng and P. Pirouz",
1717 title = "Improved beta-Si{C} heteroepitaxial films using
1718 off-axis Si substrates",
1721 journal = "Applied Physics Letters",
1725 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
1726 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
1727 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
1728 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
1729 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
1730 URL = "http://link.aip.org/link/?APL/51/823/1",
1731 doi = "10.1063/1.98824",
1732 notes = "improved sic on off-axis si substrates, reduced apbs",
1736 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1737 and Hiroyuki Matsunami",
1738 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1742 journal = "J. Appl. Phys.",
1746 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1747 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1749 URL = "http://link.aip.org/link/?JAP/73/726/1",
1750 doi = "10.1063/1.353329",
1751 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1754 @Article{powell90_2,
1755 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1756 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1757 Yoganathan and J. Yang and P. Pirouz",
1759 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
1760 vicinal (0001) 6{H}-Si{C} wafers",
1763 journal = "Applied Physics Letters",
1766 pages = "1442--1444",
1767 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1768 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
1769 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
1770 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
1771 URL = "http://link.aip.org/link/?APL/56/1442/1",
1772 doi = "10.1063/1.102492",
1773 notes = "cvd of 6h-sic on 6h-sic",
1777 author = "H. S. Kong and J. T. Glass and R. F. Davis",
1779 title = "Chemical vapor deposition and characterization of
1780 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
1784 journal = "Journal of Applied Physics",
1787 pages = "2672--2679",
1788 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
1789 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
1790 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
1791 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
1792 PHASE EPITAXY; CRYSTAL ORIENTATION",
1793 URL = "http://link.aip.org/link/?JAP/64/2672/1",
1794 doi = "10.1063/1.341608",
1798 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1799 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1800 Yoganathan and J. Yang and P. Pirouz",
1802 title = "Growth of improved quality 3{C}-Si{C} films on
1803 6{H}-Si{C} substrates",
1806 journal = "Appl. Phys. Lett.",
1809 pages = "1353--1355",
1810 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1811 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1812 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1814 URL = "http://link.aip.org/link/?APL/56/1353/1",
1815 doi = "10.1063/1.102512",
1816 notes = "cvd of 3c-sic on 6h-sic",
1820 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
1821 Rozgonyi and K. L. More",
1823 title = "An examination of double positioning boundaries and
1824 interface misfit in beta-Si{C} films on alpha-Si{C}
1828 journal = "Journal of Applied Physics",
1831 pages = "2645--2650",
1832 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
1833 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1834 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1835 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1836 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1837 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1838 doi = "10.1063/1.341004",
1842 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1843 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1844 and W. J. Choyke and L. Clemen and M. Yoganathan",
1846 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1847 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1850 journal = "Applied Physics Letters",
1854 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1855 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1856 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1857 URL = "http://link.aip.org/link/?APL/59/333/1",
1858 doi = "10.1063/1.105587",
1862 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1863 Thokala and M. J. Loboda",
1865 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1866 films on 6{H}-Si{C} by chemical vapor deposition from
1870 journal = "J. Appl. Phys.",
1873 pages = "1271--1273",
1874 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1875 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1877 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1878 doi = "10.1063/1.360368",
1879 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1883 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1884 [alpha]-Si{C}(0001) at low temperatures by solid-source
1885 molecular beam epitaxy",
1886 journal = "J. Cryst. Growth",
1892 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1893 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1894 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1895 Schr{\"{o}}ter and W. Richter",
1896 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1899 @Article{fissel95_apl,
1900 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1902 title = "Low-temperature growth of Si{C} thin films on Si and
1903 6{H}--Si{C} by solid-source molecular beam epitaxy",
1906 journal = "Appl. Phys. Lett.",
1909 pages = "3182--3184",
1910 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1912 URL = "http://link.aip.org/link/?APL/66/3182/1",
1913 doi = "10.1063/1.113716",
1914 notes = "mbe 3c-sic on si and 6h-sic",
1918 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1920 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1924 journal = "Appl. Phys. Lett.",
1928 URL = "http://link.aip.org/link/?APL/18/509/1",
1929 doi = "10.1063/1.1653516",
1930 notes = "first time sic by ibs, follow cites for precipitation
1935 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1936 J. Davis and G. E. Celler",
1938 title = "Formation of buried layers of beta-Si{C} using ion
1939 beam synthesis and incoherent lamp annealing",
1942 journal = "Appl. Phys. Lett.",
1945 pages = "2242--2244",
1946 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1947 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1948 URL = "http://link.aip.org/link/?APL/51/2242/1",
1949 doi = "10.1063/1.98953",
1950 notes = "nice tem images, sic by ibs",
1954 author = "R. I. Scace and G. A. Slack",
1956 title = "Solubility of Carbon in Silicon and Germanium",
1959 journal = "J. Chem. Phys.",
1962 pages = "1551--1555",
1963 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1964 doi = "10.1063/1.1730236",
1965 notes = "solubility of c in c-si, si-c phase diagram",
1969 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1970 F. W. Saris and W. Vandervorst",
1972 title = "Role of {C} and {B} clusters in transient diffusion of
1976 journal = "Appl. Phys. Lett.",
1979 pages = "1150--1152",
1980 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1981 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1983 URL = "http://link.aip.org/link/?APL/68/1150/1",
1984 doi = "10.1063/1.115706",
1985 notes = "suppression of transient enhanced diffusion (ted)",
1989 title = "Implantation and transient boron diffusion: the role
1990 of the silicon self-interstitial",
1991 journal = "Nucl. Instrum. Methods Phys. Res. B",
1996 note = "Selected Papers of the Tenth International Conference
1997 on Ion Implantation Technology (IIT '94)",
1999 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2000 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2001 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2006 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2007 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2008 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2011 title = "Physical mechanisms of transient enhanced dopant
2012 diffusion in ion-implanted silicon",
2015 journal = "J. Appl. Phys.",
2018 pages = "6031--6050",
2019 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2020 doi = "10.1063/1.364452",
2021 notes = "ted, transient enhanced diffusion, c silicon trap",
2025 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2027 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2028 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2031 journal = "Appl. Phys. Lett.",
2035 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2036 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2037 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2039 URL = "http://link.aip.org/link/?APL/64/324/1",
2040 doi = "10.1063/1.111195",
2041 notes = "beta sic nano crystals in si, mbe, annealing",
2045 author = "Richard A. Soref",
2047 title = "Optical band gap of the ternary semiconductor Si[sub 1
2048 - x - y]Ge[sub x]{C}[sub y]",
2051 journal = "J. Appl. Phys.",
2054 pages = "2470--2472",
2055 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2056 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2058 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2059 doi = "10.1063/1.349403",
2060 notes = "band gap of strained si by c",
2064 author = "E Kasper",
2065 title = "Superlattices of group {IV} elements, a new
2066 possibility to produce direct band gap material",
2067 journal = "Physica Scripta",
2070 URL = "http://stacks.iop.org/1402-4896/T35/232",
2072 notes = "superlattices, convert indirect band gap into a
2077 author = "H. J. Osten and J. Griesche and S. Scalese",
2079 title = "Substitutional carbon incorporation in epitaxial
2080 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2081 molecular beam epitaxy",
2084 journal = "Appl. Phys. Lett.",
2088 keywords = "molecular beam epitaxial growth; semiconductor growth;
2089 wide band gap semiconductors; interstitials; silicon
2091 URL = "http://link.aip.org/link/?APL/74/836/1",
2092 doi = "10.1063/1.123384",
2093 notes = "substitutional c in si",
2096 @Article{hohenberg64,
2097 title = "Inhomogeneous Electron Gas",
2098 author = "P. Hohenberg and W. Kohn",
2099 journal = "Phys. Rev.",
2102 pages = "B864--B871",
2106 doi = "10.1103/PhysRev.136.B864",
2107 publisher = "American Physical Society",
2108 notes = "density functional theory, dft",
2112 title = "Self-Consistent Equations Including Exchange and
2113 Correlation Effects",
2114 author = "W. Kohn and L. J. Sham",
2115 journal = "Phys. Rev.",
2118 pages = "A1133--A1138",
2122 doi = "10.1103/PhysRev.140.A1133",
2123 publisher = "American Physical Society",
2124 notes = "dft, exchange and correlation",
2128 title = "Strain-stabilized highly concentrated pseudomorphic
2129 $Si1-x$$Cx$ layers in Si",
2130 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2132 journal = "Phys. Rev. Lett.",
2135 pages = "3578--3581",
2139 doi = "10.1103/PhysRevLett.72.3578",
2140 publisher = "American Physical Society",
2141 notes = "high c concentration in si, heterostructure, strained
2146 title = "Electron Transport Model for Strained Silicon-Carbon
2148 author = "Shu-Tong Chang and Chung-Yi Lin",
2149 journal = "Japanese J. Appl. Phys.",
2152 pages = "2257--2262",
2155 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2156 doi = "10.1143/JJAP.44.2257",
2157 publisher = "The Japan Society of Applied Physics",
2158 notes = "enhance of electron mobility in starined si",
2162 author = "H. J. Osten and P. Gaworzewski",
2164 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2165 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2169 journal = "J. Appl. Phys.",
2172 pages = "4977--4981",
2173 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2174 semiconductors; semiconductor epitaxial layers; carrier
2175 density; Hall mobility; interstitials; defect states",
2176 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2177 doi = "10.1063/1.366364",
2178 notes = "charge transport in strained si",
2182 title = "Carbon-mediated aggregation of self-interstitials in
2183 silicon: {A} large-scale molecular dynamics study",
2184 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2185 journal = "Phys. Rev. B",
2192 doi = "10.1103/PhysRevB.69.155214",
2193 publisher = "American Physical Society",
2194 notes = "simulation using promising tersoff reparametrization",
2198 title = "Event-Based Relaxation of Continuous Disordered
2200 author = "G. T. Barkema and Normand Mousseau",
2201 journal = "Phys. Rev. Lett.",
2204 pages = "4358--4361",
2208 doi = "10.1103/PhysRevLett.77.4358",
2209 publisher = "American Physical Society",
2210 notes = "activation relaxation technique, art, speed up slow
2215 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2216 Minoukadeh and F. Willaime",
2218 title = "Some improvements of the activation-relaxation
2219 technique method for finding transition pathways on
2220 potential energy surfaces",
2223 journal = "J. Chem. Phys.",
2229 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2230 surfaces; vacancies (crystal)",
2231 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2232 doi = "10.1063/1.3088532",
2233 notes = "improvements to art, refs for methods to find
2234 transition pathways",
2237 @Article{parrinello81,
2238 author = "M. Parrinello and A. Rahman",
2240 title = "Polymorphic transitions in single crystals: {A} new
2241 molecular dynamics method",
2244 journal = "J. Appl. Phys.",
2247 pages = "7182--7190",
2248 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2249 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2250 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2251 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2252 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2254 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2255 doi = "10.1063/1.328693",
2258 @Article{stillinger85,
2259 title = "Computer simulation of local order in condensed phases
2261 author = "Frank H. Stillinger and Thomas A. Weber",
2262 journal = "Phys. Rev. B",
2265 pages = "5262--5271",
2269 doi = "10.1103/PhysRevB.31.5262",
2270 publisher = "American Physical Society",
2274 title = "Empirical potential for hydrocarbons for use in
2275 simulating the chemical vapor deposition of diamond
2277 author = "Donald W. Brenner",
2278 journal = "Phys. Rev. B",
2281 pages = "9458--9471",
2285 doi = "10.1103/PhysRevB.42.9458",
2286 publisher = "American Physical Society",
2287 notes = "brenner hydro carbons",
2291 title = "Modeling of Covalent Bonding in Solids by Inversion of
2292 Cohesive Energy Curves",
2293 author = "Martin Z. Bazant and Efthimios Kaxiras",
2294 journal = "Phys. Rev. Lett.",
2297 pages = "4370--4373",
2301 doi = "10.1103/PhysRevLett.77.4370",
2302 publisher = "American Physical Society",
2303 notes = "first si edip",
2307 title = "Environment-dependent interatomic potential for bulk
2309 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2311 journal = "Phys. Rev. B",
2314 pages = "8542--8552",
2318 doi = "10.1103/PhysRevB.56.8542",
2319 publisher = "American Physical Society",
2320 notes = "second si edip",
2324 title = "Interatomic potential for silicon defects and
2326 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2327 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2328 journal = "Phys. Rev. B",
2331 pages = "2539--2550",
2335 doi = "10.1103/PhysRevB.58.2539",
2336 publisher = "American Physical Society",
2337 notes = "latest si edip, good dislocation explanation",
2341 title = "{PARCAS} molecular dynamics code",
2342 author = "K. Nordlund",
2347 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2349 author = "Arthur F. Voter",
2350 journal = "Phys. Rev. Lett.",
2353 pages = "3908--3911",
2357 doi = "10.1103/PhysRevLett.78.3908",
2358 publisher = "American Physical Society",
2359 notes = "hyperdynamics, accelerated md",
2363 author = "Arthur F. Voter",
2365 title = "A method for accelerating the molecular dynamics
2366 simulation of infrequent events",
2369 journal = "J. Chem. Phys.",
2372 pages = "4665--4677",
2373 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2374 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2375 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2376 energy functions; surface diffusion; reaction kinetics
2377 theory; potential energy surfaces",
2378 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2379 doi = "10.1063/1.473503",
2380 notes = "improved hyperdynamics md",
2383 @Article{sorensen2000,
2384 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2386 title = "Temperature-accelerated dynamics for simulation of
2390 journal = "J. Chem. Phys.",
2393 pages = "9599--9606",
2394 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2395 MOLECULAR DYNAMICS METHOD; surface diffusion",
2396 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2397 doi = "10.1063/1.481576",
2398 notes = "temperature accelerated dynamics, tad",
2402 title = "Parallel replica method for dynamics of infrequent
2404 author = "Arthur F. Voter",
2405 journal = "Phys. Rev. B",
2408 pages = "R13985--R13988",
2412 doi = "10.1103/PhysRevB.57.R13985",
2413 publisher = "American Physical Society",
2414 notes = "parallel replica method, accelerated md",
2418 author = "Xiongwu Wu and Shaomeng Wang",
2420 title = "Enhancing systematic motion in molecular dynamics
2424 journal = "J. Chem. Phys.",
2427 pages = "9401--9410",
2428 keywords = "molecular dynamics method; argon; Lennard-Jones
2429 potential; crystallisation; liquid theory",
2430 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2431 doi = "10.1063/1.478948",
2432 notes = "self guided md, sgmd, accelerated md, enhancing
2436 @Article{choudhary05,
2437 author = "Devashish Choudhary and Paulette Clancy",
2439 title = "Application of accelerated molecular dynamics schemes
2440 to the production of amorphous silicon",
2443 journal = "J. Chem. Phys.",
2449 keywords = "molecular dynamics method; silicon; glass structure;
2450 amorphous semiconductors",
2451 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2452 doi = "10.1063/1.1878733",
2453 notes = "explanation of sgmd and hyper md, applied to amorphous
2458 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2460 title = "Carbon precipitation in silicon: Why is it so
2464 journal = "Appl. Phys. Lett.",
2467 pages = "3336--3338",
2468 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2469 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2471 URL = "http://link.aip.org/link/?APL/62/3336/1",
2472 doi = "10.1063/1.109063",
2473 notes = "interfacial energy of cubic sic and si",
2476 @Article{chaussende08,
2477 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2478 journal = "J. Cryst. Growth",
2483 note = "Proceedings of the E-MRS Conference, Symposium G -
2484 Substrates of Wide Bandgap Materials",
2486 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2487 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2488 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2489 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2490 and A. Andreadou and E. K. Polychroniadis and C.
2491 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2492 notes = "3c-sic crystal growth, sic fabrication + links,
2496 @Article{chaussende07,
2497 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2498 title = "Status of Si{C} bulk growth processes",
2499 journal = "Journal of Physics D: Applied Physics",
2503 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2505 notes = "review of sic single crystal growth methods, process
2510 title = "Forces in Molecules",
2511 author = "R. P. Feynman",
2512 journal = "Phys. Rev.",
2519 doi = "10.1103/PhysRev.56.340",
2520 publisher = "American Physical Society",
2521 notes = "hellmann feynman forces",
2525 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2526 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2527 their Contrasting Properties",
2528 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2530 journal = "Phys. Rev. Lett.",
2537 doi = "10.1103/PhysRevLett.84.943",
2538 publisher = "American Physical Society",
2539 notes = "si sio2 and sic sio2 interface",
2542 @Article{djurabekova08,
2543 title = "Atomistic simulation of the interface structure of Si
2544 nanocrystals embedded in amorphous silica",
2545 author = "Flyura Djurabekova and Kai Nordlund",
2546 journal = "Phys. Rev. B",
2553 doi = "10.1103/PhysRevB.77.115325",
2554 publisher = "American Physical Society",
2555 notes = "nc-si in sio2, interface energy, nc construction,
2556 angular distribution, coordination",
2560 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2561 W. Liang and J. Zou",
2563 title = "Nature of interfacial defects and their roles in
2564 strain relaxation at highly lattice mismatched
2565 3{C}-Si{C}/Si (001) interface",
2568 journal = "J. Appl. Phys.",
2574 keywords = "anelastic relaxation; crystal structure; dislocations;
2575 elemental semiconductors; semiconductor growth;
2576 semiconductor thin films; silicon; silicon compounds;
2577 stacking faults; wide band gap semiconductors",
2578 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2579 doi = "10.1063/1.3234380",
2580 notes = "sic/si interface, follow refs, tem image
2581 deconvolution, dislocation defects",
2584 @Article{kitabatake93,
2585 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2588 title = "Simulations and experiments of Si{C} heteroepitaxial
2589 growth on Si(001) surface",
2592 journal = "J. Appl. Phys.",
2595 pages = "4438--4445",
2596 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2597 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2598 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2599 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2600 doi = "10.1063/1.354385",
2601 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2605 @Article{kitabatake97,
2606 author = "Makoto Kitabatake",
2607 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2608 Heteroepitaxial Growth",
2609 publisher = "WILEY-VCH Verlag",
2611 journal = "physica status solidi (b)",
2614 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2615 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2616 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2620 title = "Strain relaxation and thermal stability of the
2621 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2623 journal = "Thin Solid Films",
2630 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2631 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2632 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2633 keywords = "Strain relaxation",
2634 keywords = "Interfaces",
2635 keywords = "Thermal stability",
2636 keywords = "Molecular dynamics",
2637 notes = "tersoff sic/si interface study",
2641 title = "Ab initio Study of Misfit Dislocations at the
2642 $Si{C}/Si(001)$ Interface",
2643 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2645 journal = "Phys. Rev. Lett.",
2652 doi = "10.1103/PhysRevLett.89.156101",
2653 publisher = "American Physical Society",
2654 notes = "sic/si interface study",
2657 @Article{pizzagalli03,
2658 title = "Theoretical investigations of a highly mismatched
2659 interface: Si{C}/Si(001)",
2660 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2662 journal = "Phys. Rev. B",
2669 doi = "10.1103/PhysRevB.68.195302",
2670 publisher = "American Physical Society",
2671 notes = "tersoff md and ab initio sic/si interface study",
2675 title = "Atomic configurations of dislocation core and twin
2676 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2677 electron microscopy",
2678 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2679 H. Zheng and J. W. Liang",
2680 journal = "Phys. Rev. B",
2687 doi = "10.1103/PhysRevB.75.184103",
2688 publisher = "American Physical Society",
2689 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2693 @Article{hornstra58,
2694 title = "Dislocations in the diamond lattice",
2695 journal = "Journal of Physics and Chemistry of Solids",
2702 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2703 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2704 author = "J. Hornstra",
2705 notes = "dislocations in diamond lattice",
2709 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2710 Ion `Hot' Implantation",
2711 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2712 Hirao and Naoki Arai and Tomio Izumi",
2713 journal = "Japanese Journal of Applied Physics",
2715 number = "Part 1, No. 2A",
2719 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2720 doi = "10.1143/JJAP.31.343",
2721 publisher = "The Japan Society of Applied Physics",
2722 notes = "c-c bonds in c implanted si, hot implantation
2723 efficiency, c-c hard to break by thermal annealing",
2726 @Article{eichhorn99,
2727 author = "F. Eichhorn and N. Schell and W. Matz and R.
2730 title = "Strain and Si{C} particle formation in silicon
2731 implanted with carbon ions of medium fluence studied by
2732 synchrotron x-ray diffraction",
2735 journal = "J. Appl. Phys.",
2738 pages = "4184--4187",
2739 keywords = "silicon; carbon; elemental semiconductors; chemical
2740 interdiffusion; ion implantation; X-ray diffraction;
2741 precipitation; semiconductor doping",
2742 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2743 doi = "10.1063/1.371344",
2744 notes = "sic conversion by ibs, detected substitutional carbon,
2745 expansion of si lattice",
2748 @Article{eichhorn02,
2749 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2750 Metzger and W. Matz and R. K{\"{o}}gler",
2752 title = "Structural relation between Si and Si{C} formed by
2753 carbon ion implantation",
2756 journal = "J. Appl. Phys.",
2759 pages = "1287--1292",
2760 keywords = "silicon compounds; wide band gap semiconductors; ion
2761 implantation; annealing; X-ray scattering; transmission
2762 electron microscopy",
2763 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2764 doi = "10.1063/1.1428105",
2765 notes = "3c-sic alignement to si host in ibs depending on
2766 temperature, might explain c into c sub trafo",
2770 author = "G Lucas and M Bertolus and L Pizzagalli",
2771 title = "An environment-dependent interatomic potential for
2772 silicon carbide: calculation of bulk properties,
2773 high-pressure phases, point and extended defects, and
2774 amorphous structures",
2775 journal = "J. Phys.: Condens. Matter",
2779 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2785 author = "J Godet and L Pizzagalli and S Brochard and P
2787 title = "Comparison between classical potentials and ab initio
2788 methods for silicon under large shear",
2789 journal = "J. Phys.: Condens. Matter",
2793 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2795 notes = "comparison of empirical potentials, stillinger weber,
2796 edip, tersoff, ab initio",
2799 @Article{moriguchi98,
2800 title = "Verification of Tersoff's Potential for Static
2801 Structural Analysis of Solids of Group-{IV} Elements",
2802 author = "Koji Moriguchi and Akira Shintani",
2803 journal = "Japanese J. Appl. Phys.",
2805 number = "Part 1, No. 2",
2809 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2810 doi = "10.1143/JJAP.37.414",
2811 publisher = "The Japan Society of Applied Physics",
2812 notes = "tersoff stringent test",
2815 @Article{mazzarolo01,
2816 title = "Low-energy recoils in crystalline silicon: Quantum
2818 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2819 Lulli and Eros Albertazzi",
2820 journal = "Phys. Rev. B",
2827 doi = "10.1103/PhysRevB.63.195207",
2828 publisher = "American Physical Society",
2831 @Article{holmstroem08,
2832 title = "Threshold defect production in silicon determined by
2833 density functional theory molecular dynamics
2835 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2836 journal = "Phys. Rev. B",
2843 doi = "10.1103/PhysRevB.78.045202",
2844 publisher = "American Physical Society",
2845 notes = "threshold displacement comparison empirical and ab
2849 @Article{nordlund97,
2850 title = "Repulsive interatomic potentials calculated using
2851 Hartree-Fock and density-functional theory methods",
2852 journal = "Nucl. Instrum. Methods Phys. Res. B",
2859 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2860 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2861 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2862 notes = "repulsive ab initio potential",
2866 title = "Efficiency of ab-initio total energy calculations for
2867 metals and semiconductors using a plane-wave basis
2869 journal = "Comput. Mater. Sci.",
2876 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2877 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2878 author = "G. Kresse and J. Furthm{\"{u}}ller",
2883 title = "Projector augmented-wave method",
2884 author = "P. E. Bl{\"o}chl",
2885 journal = "Phys. Rev. B",
2888 pages = "17953--17979",
2892 doi = "10.1103/PhysRevB.50.17953",
2893 publisher = "American Physical Society",
2894 notes = "paw method",
2898 title = "Norm-Conserving Pseudopotentials",
2899 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2900 journal = "Phys. Rev. Lett.",
2903 pages = "1494--1497",
2907 doi = "10.1103/PhysRevLett.43.1494",
2908 publisher = "American Physical Society",
2909 notes = "norm-conserving pseudopotentials",
2912 @Article{vanderbilt90,
2913 title = "Soft self-consistent pseudopotentials in a generalized
2914 eigenvalue formalism",
2915 author = "David Vanderbilt",
2916 journal = "Phys. Rev. B",
2919 pages = "7892--7895",
2923 doi = "10.1103/PhysRevB.41.7892",
2924 publisher = "American Physical Society",
2925 notes = "vasp pseudopotentials",
2929 title = "Accurate and simple density functional for the
2930 electronic exchange energy: Generalized gradient
2932 author = "John P. Perdew and Yue Wang",
2933 journal = "Phys. Rev. B",
2936 pages = "8800--8802",
2940 doi = "10.1103/PhysRevB.33.8800",
2941 publisher = "American Physical Society",
2942 notes = "rapid communication gga",
2946 title = "Generalized gradient approximations for exchange and
2947 correlation: {A} look backward and forward",
2948 journal = "Physica B: Condensed Matter",
2955 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2956 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2957 author = "John P. Perdew",
2958 notes = "gga overview",
2962 title = "Atoms, molecules, solids, and surfaces: Applications
2963 of the generalized gradient approximation for exchange
2965 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2966 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2967 and Carlos Fiolhais",
2968 journal = "Phys. Rev. B",
2971 pages = "6671--6687",
2975 doi = "10.1103/PhysRevB.46.6671",
2976 publisher = "American Physical Society",
2977 notes = "gga pw91 (as in vasp)",
2980 @Article{baldereschi73,
2981 title = "Mean-Value Point in the Brillouin Zone",
2982 author = "A. Baldereschi",
2983 journal = "Phys. Rev. B",
2986 pages = "5212--5215",
2990 doi = "10.1103/PhysRevB.7.5212",
2991 publisher = "American Physical Society",
2992 notes = "mean value k point",
2996 title = "Ab initio pseudopotential calculations of dopant
2998 journal = "Comput. Mater. Sci.",
3005 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3006 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3007 author = "Jing Zhu",
3008 keywords = "TED (transient enhanced diffusion)",
3009 keywords = "Boron dopant",
3010 keywords = "Carbon dopant",
3011 keywords = "Defect",
3012 keywords = "ab initio pseudopotential method",
3013 keywords = "Impurity cluster",
3014 notes = "binding of c to si interstitial, c in si defects",
3018 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3020 title = "Si{C} buried layer formation by ion beam synthesis at
3024 journal = "Appl. Phys. Lett.",
3027 pages = "2646--2648",
3028 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3029 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3030 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3031 ELECTRON MICROSCOPY",
3032 URL = "http://link.aip.org/link/?APL/66/2646/1",
3033 doi = "10.1063/1.113112",
3034 notes = "precipitation mechanism by substitutional carbon, si
3035 self interstitials react with further implanted c",
3039 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3040 Kolodzey and A. Hairie",
3042 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3046 journal = "J. Appl. Phys.",
3049 pages = "4631--4633",
3050 keywords = "silicon compounds; precipitation; localised modes;
3051 semiconductor epitaxial layers; infrared spectra;
3052 Fourier transform spectra; thermal stability;
3054 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3055 doi = "10.1063/1.368703",
3056 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3060 author = "R Jones and B J Coomer and P R Briddon",
3061 title = "Quantum mechanical modelling of defects in
3063 journal = "J. Phys.: Condens. Matter",
3067 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3069 notes = "ab inito init, vibrational modes, c defect in si",
3073 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3074 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3075 J. E. Greene and S. G. Bishop",
3077 title = "Carbon incorporation pathways and lattice sites in
3078 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3079 molecular-beam epitaxy",
3082 journal = "J. Appl. Phys.",
3085 pages = "5716--5727",
3086 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3087 doi = "10.1063/1.1465122",
3088 notes = "c substitutional incorporation pathway, dft and expt",
3092 title = "Dynamic properties of interstitial carbon and
3093 carbon-carbon pair defects in silicon",
3094 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3096 journal = "Phys. Rev. B",
3099 pages = "2188--2194",
3103 doi = "10.1103/PhysRevB.55.2188",
3104 publisher = "American Physical Society",
3105 notes = "ab initio c in si and di-carbon defect, no formation
3106 energies, different migration barriers and paths",
3110 title = "Interstitial carbon and the carbon-carbon pair in
3111 silicon: Semiempirical electronic-structure
3113 author = "Matthew J. Burnard and Gary G. DeLeo",
3114 journal = "Phys. Rev. B",
3117 pages = "10217--10225",
3121 doi = "10.1103/PhysRevB.47.10217",
3122 publisher = "American Physical Society",
3123 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3124 carbon defect, formation energies",
3128 title = "Electronic structure of interstitial carbon in
3130 author = "Morgan Besson and Gary G. DeLeo",
3131 journal = "Phys. Rev. B",
3134 pages = "4028--4033",
3138 doi = "10.1103/PhysRevB.43.4028",
3139 publisher = "American Physical Society",
3143 title = "Review of atomistic simulations of surface diffusion
3144 and growth on semiconductors",
3145 journal = "Comput. Mater. Sci.",
3150 note = "Proceedings of the Workshop on Virtual Molecular Beam
3153 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3154 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3155 author = "Efthimios Kaxiras",
3156 notes = "might contain c 100 db formation energy, overview md,
3157 tight binding, first principles",
3160 @Article{kaukonen98,
3161 title = "Effect of {N} and {B} doping on the growth of {CVD}
3163 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3165 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3166 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3168 journal = "Phys. Rev. B",
3171 pages = "9965--9970",
3175 doi = "10.1103/PhysRevB.57.9965",
3176 publisher = "American Physical Society",
3177 notes = "constrained conjugate gradient relaxation technique
3182 title = "Correlation between the antisite pair and the ${DI}$
3184 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3185 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3187 journal = "Phys. Rev. B",
3194 doi = "10.1103/PhysRevB.67.155203",
3195 publisher = "American Physical Society",
3199 title = "Production and recovery of defects in Si{C} after
3200 irradiation and deformation",
3201 journal = "J. Nucl. Mater.",
3204 pages = "1803--1808",
3208 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3209 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3210 author = "J. Chen and P. Jung and H. Klein",
3214 title = "Accumulation, dynamic annealing and thermal recovery
3215 of ion-beam-induced disorder in silicon carbide",
3216 journal = "Nucl. Instrum. Methods Phys. Res. B",
3223 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3224 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3225 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3228 @Article{bockstedte03,
3229 title = "Ab initio study of the migration of intrinsic defects
3231 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3233 journal = "Phys. Rev. B",
3240 doi = "10.1103/PhysRevB.68.205201",
3241 publisher = "American Physical Society",
3242 notes = "defect migration in sic",
3246 title = "Theoretical study of vacancy diffusion and
3247 vacancy-assisted clustering of antisites in Si{C}",
3248 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3250 journal = "Phys. Rev. B",
3257 doi = "10.1103/PhysRevB.68.155208",
3258 publisher = "American Physical Society",
3262 journal = "Telegrafiya i Telefoniya bez Provodov",
3266 author = "O. V. Lossev",
3270 title = "Luminous carborundum detector and detection effect and
3271 oscillations with crystals",
3272 journal = "Philosophical Magazine Series 7",
3275 pages = "1024--1044",
3277 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3278 author = "O. V. Lossev",
3282 journal = "Physik. Zeitschr.",
3286 author = "O. V. Lossev",
3290 journal = "Physik. Zeitschr.",
3294 author = "O. V. Lossev",
3298 journal = "Physik. Zeitschr.",
3302 author = "O. V. Lossev",
3306 title = "A note on carborundum",
3307 journal = "Electrical World",
3311 author = "H. J. Round",
3314 @Article{vashishath08,
3315 title = "Recent trends in silicon carbide device research",
3316 journal = "Mj. Int. J. Sci. Tech.",
3321 author = "Munish Vashishath and Ashoke K. Chatterjee",
3322 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3323 notes = "sic polytype electronic properties",
3327 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3329 title = "Growth and Properties of beta-Si{C} Single Crystals",
3332 journal = "Journal of Applied Physics",
3336 URL = "http://link.aip.org/link/?JAP/37/333/1",
3337 doi = "10.1063/1.1707837",
3338 notes = "sic melt growth",
3342 author = "A. E. van Arkel and J. H. de Boer",
3343 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3345 publisher = "WILEY-VCH Verlag GmbH",
3347 journal = "Z. Anorg. Chem.",
3350 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3351 doi = "10.1002/zaac.19251480133",
3352 notes = "van arkel apparatus",
3356 author = "K. Moers",
3358 journal = "Z. Anorg. Chem.",
3361 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3366 author = "J. T. Kendall",
3367 title = "Electronic Conduction in Silicon Carbide",
3370 journal = "The Journal of Chemical Physics",
3374 URL = "http://link.aip.org/link/?JCP/21/821/1",
3375 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3380 author = "J. A. Lely",
3382 journal = "Ber. Deut. Keram. Ges.",
3385 notes = "lely sublimation growth process",
3388 @Article{knippenberg63,
3389 author = "W. F. Knippenberg",
3391 journal = "Philips Res. Repts.",
3394 notes = "acheson process",
3397 @Article{hoffmann82,
3398 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3401 title = "Silicon carbide blue light emitting diodes with
3402 improved external quantum efficiency",
3405 journal = "Journal of Applied Physics",
3408 pages = "6962--6967",
3409 keywords = "light emitting diodes; silicon carbides; quantum
3410 efficiency; visible radiation; experimental data;
3411 epitaxy; fabrication; medium temperature; layers;
3412 aluminium; nitrogen; substrates; pn junctions;
3413 electroluminescence; spectra; current density;
3415 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3416 doi = "10.1063/1.330041",
3417 notes = "blue led, sublimation process",
3421 author = "Philip Neudeck",
3422 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3423 Road 44135 Cleveland OH",
3424 title = "Progress in silicon carbide semiconductor electronics
3426 journal = "Journal of Electronic Materials",
3427 publisher = "Springer Boston",
3429 keyword = "Chemistry and Materials Science",
3433 URL = "http://dx.doi.org/10.1007/BF02659688",
3434 note = "10.1007/BF02659688",
3436 notes = "sic data, advantages of 3c sic",
3439 @Article{bhatnagar93,
3440 author = "M. Bhatnagar and B. J. Baliga",
3441 journal = "Electron Devices, IEEE Transactions on",
3442 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3449 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3450 rectifiers;Si;SiC;breakdown voltages;drift region
3451 properties;output characteristics;power MOSFETs;power
3452 semiconductor devices;switching characteristics;thermal
3453 analysis;Schottky-barrier diodes;electric breakdown of
3454 solids;insulated gate field effect transistors;power
3455 transistors;semiconductor materials;silicon;silicon
3456 compounds;solid-state rectifiers;thermal analysis;",
3457 doi = "10.1109/16.199372",
3459 notes = "comparison 3c 6h sic and si devices",
3463 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3464 A. Powell and C. S. Salupo and L. G. Matus",
3465 journal = "Electron Devices, IEEE Transactions on",
3466 title = "Electrical properties of epitaxial 3{C}- and
3467 6{H}-Si{C} p-n junction diodes produced side-by-side on
3468 6{H}-Si{C} substrates",
3474 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3475 C;6H-SiC layers;6H-SiC substrates;CVD
3476 process;SiC;chemical vapor deposition;doping;electrical
3477 properties;epitaxial layers;light
3478 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3479 diodes;polytype;rectification characteristics;reverse
3480 leakage current;reverse voltages;temperature;leakage
3481 currents;power electronics;semiconductor
3482 diodes;semiconductor epitaxial layers;semiconductor
3483 growth;semiconductor materials;silicon
3484 compounds;solid-state rectifiers;substrates;vapour
3485 phase epitaxial growth;",
3486 doi = "10.1109/16.285038",
3488 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3493 author = "N. Schulze and D. L. Barrett and G. Pensl",
3495 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3496 single crystals by physical vapor transport",
3499 journal = "Applied Physics Letters",
3502 pages = "1632--1634",
3503 keywords = "silicon compounds; semiconductor materials;
3504 semiconductor growth; crystal growth from vapour;
3505 photoluminescence; Hall mobility",
3506 URL = "http://link.aip.org/link/?APL/72/1632/1",
3507 doi = "10.1063/1.121136",
3508 notes = "micropipe free 6h-sic pvt growth",
3512 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3514 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3517 journal = "Applied Physics Letters",
3521 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3522 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3523 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3524 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3526 URL = "http://link.aip.org/link/?APL/50/221/1",
3527 doi = "10.1063/1.97667",
3528 notes = "apb 3c-sic heteroepitaxy on si",
3531 @Article{shibahara86,
3532 title = "Surface morphology of cubic Si{C}(100) grown on
3533 Si(100) by chemical vapor deposition",
3534 journal = "Journal of Crystal Growth",
3541 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3542 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3543 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3545 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3548 @Article{desjardins96,
3549 author = "P. Desjardins and J. E. Greene",
3551 title = "Step-flow epitaxial growth on two-domain surfaces",
3554 journal = "Journal of Applied Physics",
3557 pages = "1423--1434",
3558 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3559 FILM GROWTH; SURFACE STRUCTURE",
3560 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3561 doi = "10.1063/1.360980",
3562 notes = "apb model",
3566 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3568 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3569 carbonization of silicon",
3572 journal = "Journal of Applied Physics",
3575 pages = "2070--2073",
3576 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3577 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3579 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3580 doi = "10.1063/1.360184",
3581 notes = "ssmbe of sic on si, lower temperatures",
3585 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3586 title = "Heterointerface Control and Epitaxial Growth of
3587 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3588 publisher = "WILEY-VCH Verlag",
3590 journal = "physica status solidi (b)",
3593 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3598 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3599 journal = "Journal of Crystal Growth",
3606 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3607 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3608 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3609 keywords = "Reflection high-energy electron diffraction (RHEED)",
3610 keywords = "Scanning electron microscopy (SEM)",
3611 keywords = "Silicon carbide",
3612 keywords = "Silicon",
3613 keywords = "Island growth",
3614 notes = "lower temperature, 550-700",
3617 @Article{hatayama95,
3618 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3619 on Si using hydrocarbon radicals by gas source
3620 molecular beam epitaxy",
3621 journal = "Journal of Crystal Growth",
3628 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3629 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3630 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3631 and Hiroyuki Matsunami",