2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "The role of thermostats in modeling vapor phase
29 condensation of silicon nanoparticles",
30 journal = "Applied Surface Science",
35 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
37 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
38 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
39 author = "Paul Erhart and Karsten Albe",
43 title = "Modeling the metal-semiconductor interaction:
44 Analytical bond-order potential for platinum-carbon",
45 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
46 journal = "Phys. Rev. B",
53 doi = "10.1103/PhysRevB.65.195124",
54 publisher = "American Physical Society",
55 notes = "derivation of albe bond order formalism",
59 title = "Vibrational absorption of carbon in silicon",
60 journal = "Journal of Physics and Chemistry of Solids",
67 doi = "DOI: 10.1016/0022-3697(65)90166-6",
68 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
69 author = "R. C. Newman and J. B. Willis",
70 notes = "c impurity dissolved as substitutional c in si",
74 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
77 title = "Effect of Carbon on the Lattice Parameter of Silicon",
80 journal = "Journal of Applied Physics",
84 URL = "http://link.aip.org/link/?JAP/39/4365/1",
85 doi = "10.1063/1.1656977",
86 notes = "lattice contraction due to subst c",
90 title = "The solubility of carbon in pulled silicon crystals",
91 journal = "Journal of Physics and Chemistry of Solids",
98 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
100 author = "A. R. Bean and R. C. Newman",
101 notes = "experimental solubility data of carbon in silicon",
105 author = "M. A. Capano and R. J. Trew",
106 title = "Silicon Carbide Electronic Materials and Devices",
107 journal = "MRS Bull.",
114 author = "G. R. Fisher and P. Barnes",
115 title = "Towards a unified view of polytypism in silicon
117 journal = "Philos. Mag. B",
121 notes = "sic polytypes",
125 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
126 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
127 Serre and A. Perez-Rodriguez",
128 title = "Synthesis of nano-sized Si{C} precipitates in Si by
129 simultaneous dual-beam implantation of {C}+ and Si+
131 journal = "Appl. Phys. A: Mater. Sci. Process.",
136 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
137 notes = "dual implantation, sic prec enhanced by vacancies,
138 precipitation by interstitial and substitutional
139 carbon, both mechanisms explained + refs",
143 title = "Carbon-mediated effects in silicon and in
144 silicon-related materials",
145 journal = "Materials Chemistry and Physics",
152 doi = "DOI: 10.1016/0254-0584(95)01673-I",
153 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
154 author = "W. Skorupa and R. A. Yankov",
155 notes = "review of silicon carbon compound",
159 author = "P. S. de Laplace",
160 title = "Th\'eorie analytique des probabilit\'es",
161 series = "Oeuvres Compl\`etes de Laplace",
163 publisher = "Gauthier-Villars",
167 @Article{mattoni2007,
168 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
169 title = "{Atomistic modeling of brittleness in covalent
171 journal = "Phys. Rev. B",
177 doi = "10.1103/PhysRevB.76.224103",
178 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
179 longe(r)-range-interactions, brittle propagation of
180 fracture, more available potentials, universal energy
181 relation (uer), minimum range model (mrm)",
185 title = "Comparative study of silicon empirical interatomic
187 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
188 journal = "Phys. Rev. B",
191 pages = "2250--2279",
195 doi = "10.1103/PhysRevB.46.2250",
196 publisher = "American Physical Society",
197 notes = "comparison of classical potentials for si",
201 title = "Stress relaxation in $a-Si$ induced by ion
203 author = "H. M. Urbassek M. Koster",
204 journal = "Phys. Rev. B",
207 pages = "11219--11224",
211 doi = "10.1103/PhysRevB.62.11219",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
216 @Article{breadmore99,
217 title = "Direct simulation of ion-beam-induced stressing and
218 amorphization of silicon",
219 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
220 journal = "Phys. Rev. B",
223 pages = "12610--12616",
227 doi = "10.1103/PhysRevB.60.12610",
228 publisher = "American Physical Society",
229 notes = "virial derivation for 3-body tersoff potential",
233 title = "First-Principles Calculation of Stress",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. Lett.",
242 doi = "10.1103/PhysRevLett.50.697",
243 publisher = "American Physical Society",
244 notes = "generalization of virial theorem",
248 title = "Quantum-mechanical theory of stress and force",
249 author = "O. H. Nielsen and Richard M. Martin",
250 journal = "Phys. Rev. B",
253 pages = "3780--3791",
257 doi = "10.1103/PhysRevB.32.3780",
258 publisher = "American Physical Society",
259 notes = "dft virial stress and forces",
263 author = "Henri Moissan",
264 title = "Nouvelles recherches sur la météorité de Cañon
266 journal = "Comptes rendus de l'Académie des Sciences",
273 author = "Y. S. Park",
274 title = "Si{C} Materials and Devices",
275 publisher = "Academic Press",
276 address = "San Diego",
281 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
282 Calvin H. Carter Jr. and D. Asbury",
283 title = "Si{C} Seeded Boule Growth",
284 journal = "Materials Science Forum",
288 notes = "modified lely process, micropipes",
292 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
293 Thermodynamical Properties of Lennard-Jones Molecules",
294 author = "Loup Verlet",
295 journal = "Phys. Rev.",
301 doi = "10.1103/PhysRev.159.98",
302 publisher = "American Physical Society",
303 notes = "velocity verlet integration algorithm equation of
307 @Article{berendsen84,
308 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
309 Gunsteren and A. DiNola and J. R. Haak",
311 title = "Molecular dynamics with coupling to an external bath",
314 journal = "J. Chem. Phys.",
317 pages = "3684--3690",
318 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
319 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
320 URL = "http://link.aip.org/link/?JCP/81/3684/1",
321 doi = "10.1063/1.448118",
322 notes = "berendsen thermostat barostat",
326 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
328 title = "Molecular dynamics determination of defect energetics
329 in beta -Si{C} using three representative empirical
331 journal = "Modell. Simul. Mater. Sci. Eng.",
335 URL = "http://stacks.iop.org/0965-0393/3/615",
336 notes = "comparison of tersoff, pearson and eam for defect
337 energetics in sic; (m)eam parameters for sic",
342 title = "Relationship between the embedded-atom method and
344 author = "Donald W. Brenner",
345 journal = "Phys. Rev. Lett.",
352 doi = "10.1103/PhysRevLett.63.1022",
353 publisher = "American Physical Society",
354 notes = "relation of tersoff and eam potential",
358 title = "Molecular-dynamics study of self-interstitials in
360 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
361 journal = "Phys. Rev. B",
364 pages = "9552--9558",
368 doi = "10.1103/PhysRevB.35.9552",
369 publisher = "American Physical Society",
370 notes = "selft-interstitials in silicon, stillinger-weber,
371 calculation of defect formation energy, defect
376 title = "Extended interstitials in silicon and germanium",
377 author = "H. R. Schober",
378 journal = "Phys. Rev. B",
381 pages = "13013--13015",
385 doi = "10.1103/PhysRevB.39.13013",
386 publisher = "American Physical Society",
387 notes = "stillinger-weber silicon 110 stable and metastable
388 dumbbell configuration",
392 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
393 Defect accumulation, topological features, and
395 author = "F. Gao and W. J. Weber",
396 journal = "Phys. Rev. B",
403 doi = "10.1103/PhysRevB.66.024106",
404 publisher = "American Physical Society",
405 notes = "sic intro, si cascade in 3c-sic, amorphization,
406 tersoff modified, pair correlation of amorphous sic, md
410 @Article{devanathan98,
411 title = "Computer simulation of a 10 ke{V} Si displacement
413 journal = "Nucl. Instrum. Methods Phys. Res. B",
419 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
420 author = "R. Devanathan and W. J. Weber and T. Diaz de la
422 notes = "modified tersoff short range potential, ab initio
426 @Article{devanathan98_2,
427 title = "Displacement threshold energies in [beta]-Si{C}",
428 journal = "J. Nucl. Mater.",
434 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
435 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
437 notes = "modified tersoff, ab initio, combined ab initio
441 @Article{kitabatake00,
442 title = "Si{C}/Si heteroepitaxial growth",
443 author = "M. Kitabatake",
444 journal = "Thin Solid Films",
449 notes = "md simulation, sic si heteroepitaxy, mbe",
453 title = "Intrinsic point defects in crystalline silicon:
454 Tight-binding molecular dynamics studies of
455 self-diffusion, interstitial-vacancy recombination, and
457 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
459 journal = "Phys. Rev. B",
462 pages = "14279--14289",
466 doi = "10.1103/PhysRevB.55.14279",
467 publisher = "American Physical Society",
468 notes = "si self interstitial, diffusion, tbmd",
472 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
475 title = "A kinetic Monte--Carlo study of the effective
476 diffusivity of the silicon self-interstitial in the
477 presence of carbon and boron",
480 journal = "J. Appl. Phys.",
483 pages = "1963--1967",
484 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
485 CARBON ADDITIONS; BORON ADDITIONS; elemental
486 semiconductors; self-diffusion",
487 URL = "http://link.aip.org/link/?JAP/84/1963/1",
488 doi = "10.1063/1.368328",
489 notes = "kinetic monte carlo of si self interstitial
494 title = "Barrier to Migration of the Silicon
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. Lett.",
500 pages = "1129--1132",
504 doi = "10.1103/PhysRevLett.52.1129",
505 publisher = "American Physical Society",
506 notes = "si self-interstitial migration barrier",
509 @Article{bar-yam84_2,
510 title = "Electronic structure and total-energy migration
511 barriers of silicon self-interstitials",
512 author = "Y. Bar-Yam and J. D. Joannopoulos",
513 journal = "Phys. Rev. B",
516 pages = "1844--1852",
520 doi = "10.1103/PhysRevB.30.1844",
521 publisher = "American Physical Society",
525 title = "First-principles calculations of self-diffusion
526 constants in silicon",
527 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
528 and D. B. Laks and W. Andreoni and S. T. Pantelides",
529 journal = "Phys. Rev. Lett.",
532 pages = "2435--2438",
536 doi = "10.1103/PhysRevLett.70.2435",
537 publisher = "American Physical Society",
538 notes = "si self int diffusion by ab initio md, formation
539 entropy calculations",
543 title = "Defect migration in crystalline silicon",
544 author = "Lindsey J. Munro and David J. Wales",
545 journal = "Phys. Rev. B",
548 pages = "3969--3980",
552 doi = "10.1103/PhysRevB.59.3969",
553 publisher = "American Physical Society",
554 notes = "eigenvector following method, vacancy and interstiial
555 defect migration mechanisms",
559 title = "Tight-binding theory of native point defects in
561 author = "L. Colombo",
562 journal = "Annu. Rev. Mater. Res.",
567 doi = "10.1146/annurev.matsci.32.111601.103036",
568 publisher = "Annual Reviews",
569 notes = "si self interstitial, tbmd, virial stress",
572 @Article{al-mushadani03,
573 title = "Free-energy calculations of intrinsic point defects in
575 author = "O. K. Al-Mushadani and R. J. Needs",
576 journal = "Phys. Rev. B",
583 doi = "10.1103/PhysRevB.68.235205",
584 publisher = "American Physical Society",
585 notes = "formation energies of intrinisc point defects in
586 silicon, si self interstitials, free energy",
589 @Article{goedecker02,
590 title = "A Fourfold Coordinated Point Defect in Silicon",
591 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
592 journal = "Phys. Rev. Lett.",
599 doi = "10.1103/PhysRevLett.88.235501",
600 publisher = "American Physical Society",
601 notes = "first time ffcd, fourfold coordinated point defect in
606 title = "Ab initio molecular dynamics simulation of
607 self-interstitial diffusion in silicon",
608 author = "Beat Sahli and Wolfgang Fichtner",
609 journal = "Phys. Rev. B",
616 doi = "10.1103/PhysRevB.72.245210",
617 publisher = "American Physical Society",
618 notes = "si self int, diffusion, barrier height, voronoi
623 title = "Ab initio calculations of the interaction between
624 native point defects in silicon",
625 journal = "Mater. Sci. Eng., B",
630 note = "EMRS 2005, Symposium D - Materials Science and Device
631 Issues for Future Technologies",
633 doi = "DOI: 10.1016/j.mseb.2005.08.072",
634 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
635 author = "G. Hobler and G. Kresse",
636 notes = "vasp intrinsic si defect interaction study, capture
641 title = "Ab initio study of self-diffusion in silicon over a
642 wide temperature range: Point defect states and
643 migration mechanisms",
644 author = "Shangyi Ma and Shaoqing Wang",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.81.193203",
653 publisher = "American Physical Society",
654 notes = "si self interstitial diffusion + refs",
658 title = "Atomistic simulations on the thermal stability of the
659 antisite pair in 3{C}- and 4{H}-Si{C}",
660 author = "M. Posselt and F. Gao and W. J. Weber",
661 journal = "Phys. Rev. B",
668 doi = "10.1103/PhysRevB.73.125206",
669 publisher = "American Physical Society",
673 title = "Correlation between self-diffusion in Si and the
674 migration mechanisms of vacancies and
675 self-interstitials: An atomistic study",
676 author = "M. Posselt and F. Gao and H. Bracht",
677 journal = "Phys. Rev. B",
684 doi = "10.1103/PhysRevB.78.035208",
685 publisher = "American Physical Society",
686 notes = "si self-interstitial and vacancy diffusion, stillinger
691 title = "Ab initio and empirical-potential studies of defect
692 properties in $3{C}-Si{C}$",
693 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
695 journal = "Phys. Rev. B",
702 doi = "10.1103/PhysRevB.64.245208",
703 publisher = "American Physical Society",
704 notes = "defects in 3c-sic",
708 title = "Empirical potential approach for defect properties in
710 journal = "Nucl. Instrum. Methods Phys. Res. B",
717 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
718 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
719 author = "Fei Gao and William J. Weber",
720 keywords = "Empirical potential",
721 keywords = "Defect properties",
722 keywords = "Silicon carbide",
723 keywords = "Computer simulation",
724 notes = "sic potential, brenner type, like erhart/albe",
728 title = "Atomistic study of intrinsic defect migration in
730 author = "Fei Gao and William J. Weber and M. Posselt and V.
732 journal = "Phys. Rev. B",
739 doi = "10.1103/PhysRevB.69.245205",
740 publisher = "American Physical Society",
741 notes = "defect migration in sic",
745 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
748 title = "Ab Initio atomic simulations of antisite pair recovery
749 in cubic silicon carbide",
752 journal = "Appl. Phys. Lett.",
758 keywords = "ab initio calculations; silicon compounds; antisite
759 defects; wide band gap semiconductors; molecular
760 dynamics method; density functional theory;
761 electron-hole recombination; photoluminescence;
762 impurities; diffusion",
763 URL = "http://link.aip.org/link/?APL/90/221915/1",
764 doi = "10.1063/1.2743751",
767 @Article{mattoni2002,
768 title = "Self-interstitial trapping by carbon complexes in
769 crystalline silicon",
770 author = "A. Mattoni and F. Bernardini and L. Colombo",
771 journal = "Phys. Rev. B",
778 doi = "10.1103/PhysRevB.66.195214",
779 publisher = "American Physical Society",
780 notes = "c in c-si, diffusion, interstitial configuration +
781 links, interaction of carbon and silicon interstitials,
782 tersoff suitability",
786 title = "Calculations of Silicon Self-Interstitial Defects",
787 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
789 journal = "Phys. Rev. Lett.",
792 pages = "2351--2354",
796 doi = "10.1103/PhysRevLett.83.2351",
797 publisher = "American Physical Society",
798 notes = "nice images of the defects, si defect overview +
803 title = "Identification of the migration path of interstitial
805 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
806 journal = "Phys. Rev. B",
809 pages = "7439--7442",
813 doi = "10.1103/PhysRevB.50.7439",
814 publisher = "American Physical Society",
815 notes = "carbon interstitial migration path shown, 001 c-si
820 title = "Theory of carbon-carbon pairs in silicon",
821 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
822 journal = "Phys. Rev. B",
825 pages = "9845--9850",
829 doi = "10.1103/PhysRevB.58.9845",
830 publisher = "American Physical Society",
831 notes = "c_i c_s pair configuration, theoretical results",
835 title = "Bistable interstitial-carbon--substitutional-carbon
837 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
839 journal = "Phys. Rev. B",
842 pages = "5765--5783",
846 doi = "10.1103/PhysRevB.42.5765",
847 publisher = "American Physical Society",
848 notes = "c_i c_s pair configuration, experimental results",
852 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
853 Shifeng Lu and Xiang-Yang Liu",
855 title = "Ab initio modeling and experimental study of {C}--{B}
859 journal = "Appl. Phys. Lett.",
863 keywords = "silicon; boron; carbon; elemental semiconductors;
864 impurity-defect interactions; ab initio calculations;
865 secondary ion mass spectra; diffusion; interstitials",
866 URL = "http://link.aip.org/link/?APL/80/52/1",
867 doi = "10.1063/1.1430505",
868 notes = "c-c 100 split, lower as a and b states of capaz",
872 title = "Ab initio investigation of carbon-related defects in
874 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
876 journal = "Phys. Rev. B",
879 pages = "12554--12557",
883 doi = "10.1103/PhysRevB.47.12554",
884 publisher = "American Physical Society",
885 notes = "c interstitials in crystalline silicon",
889 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
891 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
892 Sokrates T. Pantelides",
893 journal = "Phys. Rev. Lett.",
896 pages = "1814--1817",
900 doi = "10.1103/PhysRevLett.52.1814",
901 publisher = "American Physical Society",
902 notes = "microscopic theory diffusion silicon dft migration
907 title = "Unified Approach for Molecular Dynamics and
908 Density-Functional Theory",
909 author = "R. Car and M. Parrinello",
910 journal = "Phys. Rev. Lett.",
913 pages = "2471--2474",
917 doi = "10.1103/PhysRevLett.55.2471",
918 publisher = "American Physical Society",
919 notes = "car parrinello method, dft and md",
923 title = "Short-range order, bulk moduli, and physical trends in
924 c-$Si1-x$$Cx$ alloys",
925 author = "P. C. Kelires",
926 journal = "Phys. Rev. B",
929 pages = "8784--8787",
933 doi = "10.1103/PhysRevB.55.8784",
934 publisher = "American Physical Society",
935 notes = "c strained si, montecarlo md, bulk moduli, next
940 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
941 Application to the $Si1-x-yGexCy$ System",
942 author = "P. C. Kelires",
943 journal = "Phys. Rev. Lett.",
946 pages = "1114--1117",
950 doi = "10.1103/PhysRevLett.75.1114",
951 publisher = "American Physical Society",
952 notes = "mc md, strain compensation in si ge by c insertion",
956 title = "Low temperature electron irradiation of silicon
958 journal = "Solid State Communications",
965 doi = "DOI: 10.1016/0038-1098(70)90074-8",
966 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
967 author = "A. R. Bean and R. C. Newman",
971 author = "F. Durand and J. Duby",
972 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
973 title = "Carbon solubility in solid and liquid silicon—{A}
974 review with reference to eutectic equilibrium",
975 journal = "Journal of Phase Equilibria",
976 publisher = "Springer New York",
978 keyword = "Chemistry and Materials Science",
982 URL = "http://dx.doi.org/10.1361/105497199770335956",
983 note = "10.1361/105497199770335956",
985 notes = "better c solubility limit in silicon",
989 title = "{EPR} Observation of the Isolated Interstitial Carbon
991 author = "G. D. Watkins and K. L. Brower",
992 journal = "Phys. Rev. Lett.",
995 pages = "1329--1332",
999 doi = "10.1103/PhysRevLett.36.1329",
1000 publisher = "American Physical Society",
1001 notes = "epr observations of 100 interstitial carbon atom in
1006 title = "{EPR} identification of the single-acceptor state of
1007 interstitial carbon in silicon",
1008 author = "L. W. Song and G. D. Watkins",
1009 journal = "Phys. Rev. B",
1012 pages = "5759--5764",
1016 doi = "10.1103/PhysRevB.42.5759",
1017 publisher = "American Physical Society",
1018 notes = "carbon diffusion in silicon",
1022 author = "A K Tipping and R C Newman",
1023 title = "The diffusion coefficient of interstitial carbon in
1025 journal = "Semicond. Sci. Technol.",
1029 URL = "http://stacks.iop.org/0268-1242/2/315",
1031 notes = "diffusion coefficient of carbon interstitials in
1036 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1039 title = "Annealing behavior of Me{V} implanted carbon in
1043 journal = "Journal of Applied Physics",
1046 pages = "3815--3820",
1047 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1048 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1050 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1051 doi = "10.1063/1.354474",
1052 notes = "c at interstitial location for rt implantation in si",
1056 title = "Carbon incorporation into Si at high concentrations by
1057 ion implantation and solid phase epitaxy",
1058 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1059 Picraux and J. K. Watanabe and J. W. Mayer",
1060 journal = "J. Appl. Phys.",
1065 doi = "10.1063/1.360806",
1066 notes = "strained silicon, carbon supersaturation",
1069 @Article{laveant2002,
1070 title = "Epitaxy of carbon-rich silicon with {MBE}",
1071 journal = "Mater. Sci. Eng., B",
1077 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1078 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1079 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1081 notes = "low c in si, tensile stress to compensate compressive
1082 stress, avoid sic precipitation",
1086 title = "The formation of swirl defects in silicon by
1087 agglomeration of self-interstitials",
1088 journal = "Journal of Crystal Growth",
1095 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1096 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1097 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1098 notes = "b-swirl: si + c interstitial agglomerates, c-si
1103 title = "Microdefects in silicon and their relation to point
1105 journal = "Journal of Crystal Growth",
1112 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1113 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1114 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1115 notes = "swirl review",
1119 author = "P. Werner and S. Eichler and G. Mariani and R.
1120 K{\"{o}}gler and W. Skorupa",
1121 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1122 silicon by transmission electron microscopy",
1125 journal = "Appl. Phys. Lett.",
1129 keywords = "silicon; ion implantation; carbon; crystal defects;
1130 transmission electron microscopy; annealing; positron
1131 annihilation; secondary ion mass spectroscopy; buried
1132 layers; precipitation",
1133 URL = "http://link.aip.org/link/?APL/70/252/1",
1134 doi = "10.1063/1.118381",
1135 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1139 @InProceedings{werner96,
1140 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1142 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1143 International Conference on",
1144 title = "{TEM} investigation of {C}-Si defects in carbon
1151 doi = "10.1109/IIT.1996.586497",
1153 notes = "c-si agglomerates dumbbells",
1157 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1160 title = "Carbon diffusion in silicon",
1163 journal = "Appl. Phys. Lett.",
1166 pages = "2465--2467",
1167 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1168 secondary ion mass spectra; semiconductor epitaxial
1169 layers; annealing; impurity-defect interactions;
1170 impurity distribution",
1171 URL = "http://link.aip.org/link/?APL/73/2465/1",
1172 doi = "10.1063/1.122483",
1173 notes = "c diffusion in si, kick out mechnism",
1177 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1179 title = "Self-interstitial enhanced carbon diffusion in
1183 journal = "Applied Physics Letters",
1187 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1188 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1189 TEMPERATURE; IMPURITIES",
1190 URL = "http://link.aip.org/link/?APL/45/268/1",
1191 doi = "10.1063/1.95167",
1192 notes = "c diffusion due to si self-interstitials",
1196 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1199 title = "Characterization of SiGe/Si heterostructures formed by
1200 Ge[sup + ] and {C}[sup + ] implantation",
1203 journal = "Applied Physics Letters",
1206 pages = "2345--2347",
1207 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1208 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1209 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1210 EPITAXY; CARBON IONS; GERMANIUM IONS",
1211 URL = "http://link.aip.org/link/?APL/57/2345/1",
1212 doi = "10.1063/1.103888",
1216 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1217 Doyle and S. T. Picraux and J. W. Mayer",
1219 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1222 journal = "Applied Physics Letters",
1225 pages = "2786--2788",
1226 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1227 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1228 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1229 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1230 EPITAXY; AMORPHIZATION",
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1232 doi = "10.1063/1.110334",
1236 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1237 Legoues and J. Angilello and F. Cardone",
1239 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1240 strained layer superlattices",
1243 journal = "Applied Physics Letters",
1246 pages = "2758--2760",
1247 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1248 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1249 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1250 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1251 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1252 URL = "http://link.aip.org/link/?APL/60/2758/1",
1253 doi = "10.1063/1.106868",
1257 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1258 Picraux and J. K. Watanabe and J. W. Mayer",
1260 title = "Precipitation and relaxation in strained Si[sub 1 -
1261 y]{C}[sub y]/Si heterostructures",
1264 journal = "J. Appl. Phys.",
1267 pages = "3656--3668",
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1269 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1270 doi = "10.1063/1.357429",
1271 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1272 precipitation by substitutional carbon, coherent prec,
1273 coherent to incoherent transition strain vs interface
1278 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1281 title = "Investigation of the high temperature behavior of
1282 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1285 journal = "J. Appl. Phys.",
1288 pages = "1934--1937",
1289 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1290 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1291 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1292 TEMPERATURE RANGE 04001000 K",
1293 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1294 doi = "10.1063/1.358826",
1298 title = "Prospects for device implementation of wide band gap
1300 author = "J. H. Edgar",
1301 journal = "J. Mater. Res.",
1306 doi = "10.1557/JMR.1992.0235",
1307 notes = "properties wide band gap semiconductor, sic
1311 @Article{zirkelbach2007,
1312 title = "Monte Carlo simulation study of a selforganisation
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1314 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
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1350 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1352 journal = "Comp. Mater. Sci.",
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1364 @Article{zirkelbach09,
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1367 journal = "Mater. Sci. Eng., B",
1372 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1373 Silicon Materials Research for Electronic and
1374 Photovoltaic Applications",
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1381 keywords = "Carbon",
1382 keywords = "Silicon carbide",
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1385 keywords = "Molecular dynamics simulations",
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1390 classical potentials and first-principles methods",
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1392 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1428 author = "J. K. N. Lindner and A. Frohnwieser and B.
1429 Rauschenbach and B. Stritzker",
1430 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1432 journal = "MRS Online Proceedings Library",
1437 doi = "10.1557/PROC-354-171",
1438 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1439 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1440 notes = "first time ibs at moderate temperatures",
1444 title = "Formation of buried epitaxial silicon carbide layers
1445 in silicon by ion beam synthesis",
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1455 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1456 Götz and A. Frohnwieser and B. Rauschenbach and B.
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1461 @Article{calcagno96,
1462 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1464 journal = "Nuclear Instruments and Methods in Physics Research
1465 Section B: Beam Interactions with Materials and Atoms",
1470 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1471 New Trends in Ion Beam Processing of Materials",
1473 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1474 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1475 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1476 Grimaldi and P. Musumeci",
1477 notes = "dose window, graphitic bonds",
1481 title = "Mechanisms of Si{C} Formation in the Ion Beam
1482 Synthesis of 3{C}-Si{C} Layers in Silicon",
1483 journal = "Materials Science Forum",
1488 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1489 URL = "http://www.scientific.net/MSF.264-268.215",
1490 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1491 notes = "intermediate temperature for sharp interface + good
1496 title = "Controlling the density distribution of Si{C}
1497 nanocrystals for the ion beam synthesis of buried Si{C}
1499 journal = "Nucl. Instrum. Methods Phys. Res. B",
1506 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1507 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1508 author = "J. K. N. Lindner and B. Stritzker",
1509 notes = "two-step implantation process",
1512 @Article{lindner99_2,
1513 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1515 journal = "Nucl. Instrum. Methods Phys. Res. B",
1521 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1522 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1523 author = "J. K. N. Lindner and B. Stritzker",
1524 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1528 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1529 Basic physical processes",
1530 journal = "Nucl. Instrum. Methods Phys. Res. B",
1537 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1538 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1539 author = "J{\"{o}}rg K. N. Lindner",
1543 title = "High-dose carbon implantations into silicon:
1544 fundamental studies for new technological tricks",
1545 author = "J. K. N. Lindner",
1546 journal = "Appl. Phys. A",
1550 doi = "10.1007/s00339-002-2062-8",
1551 notes = "ibs, burried sic layers",
1555 title = "On the balance between ion beam induced nanoparticle
1556 formation and displacive precipitate resolution in the
1558 journal = "Mater. Sci. Eng., C",
1563 note = "Current Trends in Nanoscience - from Materials to
1566 doi = "DOI: 10.1016/j.msec.2005.09.099",
1567 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1568 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1570 notes = "c int diffusion barrier",
1574 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1575 application in buffer layer for Ga{N} epitaxial
1577 journal = "Applied Surface Science",
1582 note = "APHYS'03 Special Issue",
1584 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1585 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1586 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1587 and S. Nishio and K. Yasuda and Y. Ishigami",
1588 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1591 @Article{yamamoto04,
1592 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1593 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1594 implantation into Si(1 1 1) substrate",
1595 journal = "Journal of Crystal Growth",
1600 note = "Proceedings of the 11th Biennial (US) Workshop on
1601 Organometallic Vapor Phase Epitaxy (OMVPE)",
1603 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1604 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1605 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1606 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1607 notes = "gan on 3c-sic",
1611 title = "Substrates for gallium nitride epitaxy",
1612 journal = "Materials Science and Engineering: R: Reports",
1619 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1620 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1621 author = "L. Liu and J. H. Edgar",
1622 notes = "gan substrates",
1625 @Article{takeuchi91,
1626 title = "Growth of single crystalline Ga{N} film on Si
1627 substrate using 3{C}-Si{C} as an intermediate layer",
1628 journal = "Journal of Crystal Growth",
1635 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1636 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1637 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1638 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1639 notes = "gan on 3c-sic (first time?)",
1643 author = "B. J. Alder and T. E. Wainwright",
1644 title = "Phase Transition for a Hard Sphere System",
1647 journal = "J. Chem. Phys.",
1650 pages = "1208--1209",
1651 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1652 doi = "10.1063/1.1743957",
1656 author = "B. J. Alder and T. E. Wainwright",
1657 title = "Studies in Molecular Dynamics. {I}. General Method",
1660 journal = "J. Chem. Phys.",
1664 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1668 @Article{horsfield96,
1669 title = "Bond-order potentials: Theory and implementation",
1670 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1671 D. G. Pettifor and M. Aoki",
1672 journal = "Phys. Rev. B",
1675 pages = "12694--12712",
1679 doi = "10.1103/PhysRevB.53.12694",
1680 publisher = "American Physical Society",
1684 title = "Empirical chemical pseudopotential theory of molecular
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1686 author = "G. C. Abell",
1687 journal = "Phys. Rev. B",
1690 pages = "6184--6196",
1694 doi = "10.1103/PhysRevB.31.6184",
1695 publisher = "American Physical Society",
1698 @Article{tersoff_si1,
1699 title = "New empirical model for the structural properties of
1701 author = "J. Tersoff",
1702 journal = "Phys. Rev. Lett.",
1709 doi = "10.1103/PhysRevLett.56.632",
1710 publisher = "American Physical Society",
1714 title = "Development of a many-body Tersoff-type potential for
1716 author = "Brian W. Dodson",
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1720 pages = "2795--2798",
1724 doi = "10.1103/PhysRevB.35.2795",
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1728 @Article{tersoff_si2,
1729 title = "New empirical approach for the structure and energy of
1731 author = "J. Tersoff",
1732 journal = "Phys. Rev. B",
1735 pages = "6991--7000",
1739 doi = "10.1103/PhysRevB.37.6991",
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1743 @Article{tersoff_si3,
1744 title = "Empirical interatomic potential for silicon with
1745 improved elastic properties",
1746 author = "J. Tersoff",
1747 journal = "Phys. Rev. B",
1750 pages = "9902--9905",
1754 doi = "10.1103/PhysRevB.38.9902",
1755 publisher = "American Physical Society",
1759 title = "Empirical Interatomic Potential for Carbon, with
1760 Applications to Amorphous Carbon",
1761 author = "J. Tersoff",
1762 journal = "Phys. Rev. Lett.",
1765 pages = "2879--2882",
1769 doi = "10.1103/PhysRevLett.61.2879",
1770 publisher = "American Physical Society",
1774 title = "Modeling solid-state chemistry: Interatomic potentials
1775 for multicomponent systems",
1776 author = "J. Tersoff",
1777 journal = "Phys. Rev. B",
1780 pages = "5566--5568",
1784 doi = "10.1103/PhysRevB.39.5566",
1785 publisher = "American Physical Society",
1789 title = "Carbon defects and defect reactions in silicon",
1790 author = "J. Tersoff",
1791 journal = "Phys. Rev. Lett.",
1794 pages = "1757--1760",
1798 doi = "10.1103/PhysRevLett.64.1757",
1799 publisher = "American Physical Society",
1803 title = "Point defects and dopant diffusion in silicon",
1804 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1805 journal = "Rev. Mod. Phys.",
1812 doi = "10.1103/RevModPhys.61.289",
1813 publisher = "American Physical Society",
1817 title = "Silicon carbide: synthesis and processing",
1818 journal = "Nucl. Instrum. Methods Phys. Res. B",
1823 note = "Radiation Effects in Insulators",
1825 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1826 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
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1831 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1832 Palmour and J. A. Edmond",
1833 journal = "Proceedings of the IEEE",
1834 title = "Thin film deposition and microelectronic and
1835 optoelectronic device fabrication and characterization
1836 in monocrystalline alpha and beta silicon carbide",
1842 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1843 diode;SiC;dry etching;electrical
1844 contacts;etching;impurity incorporation;optoelectronic
1845 device fabrication;solid-state devices;surface
1846 chemistry;Schottky effect;Schottky gate field effect
1847 transistors;Schottky-barrier
1848 diodes;etching;heterojunction bipolar
1849 transistors;insulated gate field effect
1850 transistors;light emitting diodes;semiconductor
1851 materials;semiconductor thin films;silicon compounds;",
1852 doi = "10.1109/5.90132",
1854 notes = "sic growth methods",
1858 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1859 Lin and B. Sverdlov and M. Burns",
1861 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1862 ZnSe-based semiconductor device technologies",
1865 journal = "J. Appl. Phys.",
1868 pages = "1363--1398",
1869 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1870 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1871 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1873 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1874 doi = "10.1063/1.358463",
1875 notes = "sic intro, properties",
1879 author = "Noch Unbekannt",
1880 title = "How to find references",
1881 journal = "Journal of Applied References",
1888 title = "Atomistic simulation of thermomechanical properties of
1890 author = "Meijie Tang and Sidney Yip",
1891 journal = "Phys. Rev. B",
1894 pages = "15150--15159",
1897 doi = "10.1103/PhysRevB.52.15150",
1898 notes = "modified tersoff, scale cutoff with volume, promising
1899 tersoff reparametrization",
1900 publisher = "American Physical Society",
1904 title = "Silicon carbide as a new {MEMS} technology",
1905 journal = "Sensors and Actuators A: Physical",
1911 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1912 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1913 author = "Pasqualina M. Sarro",
1915 keywords = "Silicon carbide",
1916 keywords = "Micromachining",
1917 keywords = "Mechanical stress",
1921 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1922 semiconductor for high-temperature applications: {A}
1924 journal = "Solid-State Electronics",
1927 pages = "1409--1422",
1930 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1931 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1932 author = "J. B. Casady and R. W. Johnson",
1933 notes = "sic intro",
1936 @Article{giancarli98,
1937 title = "Design requirements for Si{C}/Si{C} composites
1938 structural material in fusion power reactor blankets",
1939 journal = "Fusion Engineering and Design",
1945 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1946 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1947 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1948 Marois and N. B. Morley and J. F. Salavy",
1952 title = "Electrical and optical characterization of Si{C}",
1953 journal = "Physica B: Condensed Matter",
1959 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1960 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1961 author = "G. Pensl and W. J. Choyke",
1965 title = "Investigation of growth processes of ingots of silicon
1966 carbide single crystals",
1967 journal = "J. Cryst. Growth",
1972 notes = "modified lely process",
1974 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1975 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1976 author = "Yu. M. Tairov and V. F. Tsvetkov",
1980 title = "General principles of growing large-size single
1981 crystals of various silicon carbide polytypes",
1982 journal = "Journal of Crystal Growth",
1989 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1990 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1991 author = "Yu.M. Tairov and V. F. Tsvetkov",
1995 title = "Si{C} boule growth by sublimation vapor transport",
1996 journal = "Journal of Crystal Growth",
2003 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2004 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2005 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2006 R. H. Hopkins and W. J. Choyke",
2010 title = "Growth of large Si{C} single crystals",
2011 journal = "Journal of Crystal Growth",
2018 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2019 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2020 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2021 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2026 title = "Control of polytype formation by surface energy
2027 effects during the growth of Si{C} monocrystals by the
2028 sublimation method",
2029 journal = "Journal of Crystal Growth",
2036 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2037 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2038 author = "R. A. Stein and P. Lanig",
2039 notes = "6h and 4h, sublimation technique",
2043 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2046 title = "Production of large-area single-crystal wafers of
2047 cubic Si{C} for semiconductor devices",
2050 journal = "Appl. Phys. Lett.",
2054 keywords = "silicon carbides; layers; chemical vapor deposition;
2056 URL = "http://link.aip.org/link/?APL/42/460/1",
2057 doi = "10.1063/1.93970",
2058 notes = "cvd of 3c-sic on si, sic buffer layer",
2062 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2063 and Hiroyuki Matsunami",
2065 title = "Epitaxial growth and electric characteristics of cubic
2069 journal = "J. Appl. Phys.",
2072 pages = "4889--4893",
2073 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2074 doi = "10.1063/1.338355",
2075 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2080 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2082 title = "Growth and Characterization of Cubic Si{C}
2083 Single-Crystal Films on Si",
2086 journal = "Journal of The Electrochemical Society",
2089 pages = "1558--1565",
2090 keywords = "semiconductor materials; silicon compounds; carbon
2091 compounds; crystal morphology; electron mobility",
2092 URL = "http://link.aip.org/link/?JES/134/1558/1",
2093 doi = "10.1149/1.2100708",
2094 notes = "blue light emitting diodes (led)",
2097 @Article{powell87_2,
2098 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2099 C. M. Chorey and T. T. Cheng and P. Pirouz",
2101 title = "Improved beta-Si{C} heteroepitaxial films using
2102 off-axis Si substrates",
2105 journal = "Applied Physics Letters",
2109 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2110 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2111 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2112 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2113 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2114 URL = "http://link.aip.org/link/?APL/51/823/1",
2115 doi = "10.1063/1.98824",
2116 notes = "improved sic on off-axis si substrates, reduced apbs",
2120 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2121 journal = "Journal of Crystal Growth",
2128 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2129 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2130 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2132 notes = "step-controlled epitaxy model",
2136 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2137 and Hiroyuki Matsunami",
2138 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2142 journal = "J. Appl. Phys.",
2146 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2147 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2149 URL = "http://link.aip.org/link/?JAP/73/726/1",
2150 doi = "10.1063/1.353329",
2151 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2154 @Article{powell90_2,
2155 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2156 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2157 Yoganathan and J. Yang and P. Pirouz",
2159 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2160 vicinal (0001) 6{H}-Si{C} wafers",
2163 journal = "Applied Physics Letters",
2166 pages = "1442--1444",
2167 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2168 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2169 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2170 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2171 URL = "http://link.aip.org/link/?APL/56/1442/1",
2172 doi = "10.1063/1.102492",
2173 notes = "cvd of 6h-sic on 6h-sic",
2177 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2179 title = "Chemical vapor deposition and characterization of
2180 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2184 journal = "Journal of Applied Physics",
2187 pages = "2672--2679",
2188 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2189 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2190 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2191 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2192 PHASE EPITAXY; CRYSTAL ORIENTATION",
2193 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2194 doi = "10.1063/1.341608",
2198 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2199 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2200 Yoganathan and J. Yang and P. Pirouz",
2202 title = "Growth of improved quality 3{C}-Si{C} films on
2203 6{H}-Si{C} substrates",
2206 journal = "Appl. Phys. Lett.",
2209 pages = "1353--1355",
2210 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2211 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2212 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2214 URL = "http://link.aip.org/link/?APL/56/1353/1",
2215 doi = "10.1063/1.102512",
2216 notes = "cvd of 3c-sic on 6h-sic",
2220 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2221 Rozgonyi and K. L. More",
2223 title = "An examination of double positioning boundaries and
2224 interface misfit in beta-Si{C} films on alpha-Si{C}
2228 journal = "Journal of Applied Physics",
2231 pages = "2645--2650",
2232 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2233 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2234 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2235 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2236 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2237 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2238 doi = "10.1063/1.341004",
2242 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2243 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2244 and W. J. Choyke and L. Clemen and M. Yoganathan",
2246 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2247 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2250 journal = "Applied Physics Letters",
2254 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2255 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2256 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2257 URL = "http://link.aip.org/link/?APL/59/333/1",
2258 doi = "10.1063/1.105587",
2262 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2263 Thokala and M. J. Loboda",
2265 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2266 films on 6{H}-Si{C} by chemical vapor deposition from
2270 journal = "J. Appl. Phys.",
2273 pages = "1271--1273",
2274 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2275 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2277 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2278 doi = "10.1063/1.360368",
2279 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2283 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2284 properties of its p-n junction",
2285 journal = "Journal of Crystal Growth",
2292 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2293 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2294 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2296 notes = "first time ssmbe of 3c-sic on 6h-sic",
2300 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2301 [alpha]-Si{C}(0001) at low temperatures by solid-source
2302 molecular beam epitaxy",
2303 journal = "J. Cryst. Growth",
2309 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2310 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2311 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2312 Schr{\"{o}}ter and W. Richter",
2313 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2316 @Article{fissel95_apl,
2317 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2319 title = "Low-temperature growth of Si{C} thin films on Si and
2320 6{H}--Si{C} by solid-source molecular beam epitaxy",
2323 journal = "Appl. Phys. Lett.",
2326 pages = "3182--3184",
2327 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2329 URL = "http://link.aip.org/link/?APL/66/3182/1",
2330 doi = "10.1063/1.113716",
2331 notes = "mbe 3c-sic on si and 6h-sic",
2335 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2336 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2338 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2339 migration enhanced epitaxy controlled to an atomic
2340 level using surface superstructures",
2343 journal = "Applied Physics Letters",
2346 pages = "1204--1206",
2347 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2348 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2350 URL = "http://link.aip.org/link/?APL/68/1204/1",
2351 doi = "10.1063/1.115969",
2352 notes = "ss mbe sic, superstructure, reconstruction",
2356 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2357 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2358 C. M. Bertoni and A. Catellani",
2359 journal = "Phys. Rev. Lett.",
2366 doi = "10.1103/PhysRevLett.91.136101",
2367 publisher = "American Physical Society",
2368 notes = "dft calculations mbe sic growth",
2372 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2374 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2378 journal = "Appl. Phys. Lett.",
2382 URL = "http://link.aip.org/link/?APL/18/509/1",
2383 doi = "10.1063/1.1653516",
2384 notes = "first time sic by ibs, follow cites for precipitation
2389 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2390 and E. V. Lubopytova",
2391 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2392 by ion implantation",
2393 publisher = "Taylor \& Francis",
2395 journal = "Radiation Effects",
2399 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2400 notes = "3c-sic for different temperatures, amorphous, poly,
2401 single crystalline",
2404 @Article{akimchenko80,
2405 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2406 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2407 title = "Structure and optical properties of silicon implanted
2408 by high doses of 70 and 310 ke{V} carbon ions",
2409 publisher = "Taylor \& Francis",
2411 journal = "Radiation Effects",
2415 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2416 notes = "3c-sic nucleation by thermal spikes",
2420 title = "Structure and annealing properties of silicon carbide
2421 thin layers formed by implantation of carbon ions in
2423 journal = "Thin Solid Films",
2430 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2431 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2432 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2437 title = "Characteristics of the synthesis of [beta]-Si{C} by
2438 the implantation of carbon ions into silicon",
2439 journal = "Thin Solid Films",
2446 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2447 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2448 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2453 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2454 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2455 Chater and J. A. Iulner and J. Davis",
2456 title = "Formation mechanisms and structures of insulating
2457 compounds formed in silicon by ion beam synthesis",
2458 publisher = "Taylor \& Francis",
2460 journal = "Radiation Effects",
2464 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2465 notes = "ibs, comparison with sio and sin, higher temp or time,
2466 no c redistribution",
2470 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2471 J. Davis and G. E. Celler",
2473 title = "Formation of buried layers of beta-Si{C} using ion
2474 beam synthesis and incoherent lamp annealing",
2477 journal = "Appl. Phys. Lett.",
2480 pages = "2242--2244",
2481 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2482 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2483 URL = "http://link.aip.org/link/?APL/51/2242/1",
2484 doi = "10.1063/1.98953",
2485 notes = "nice tem images, sic by ibs",
2489 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2490 and M. Olivier and A. M. Papon and G. Rolland",
2492 title = "High-temperature ion beam synthesis of cubic Si{C}",
2495 journal = "Journal of Applied Physics",
2498 pages = "2908--2912",
2499 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2500 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2501 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2502 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2503 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2504 REACTIONS; MONOCRYSTALS",
2505 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2506 doi = "10.1063/1.346092",
2507 notes = "triple energy implantation to overcome high annealing
2512 author = "R. I. Scace and G. A. Slack",
2514 title = "Solubility of Carbon in Silicon and Germanium",
2517 journal = "J. Chem. Phys.",
2520 pages = "1551--1555",
2521 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2522 doi = "10.1063/1.1730236",
2523 notes = "solubility of c in c-si, si-c phase diagram",
2527 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2529 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2530 Laboratories Eindhoven Netherlands Eindhoven
2532 title = "Boron implantations in silicon: {A} comparison of
2533 charge carrier and boron concentration profiles",
2534 journal = "Applied Physics A: Materials Science \& Processing",
2535 publisher = "Springer Berlin / Heidelberg",
2537 keyword = "Physics and Astronomy",
2541 URL = "http://dx.doi.org/10.1007/BF00884267",
2542 note = "10.1007/BF00884267",
2544 notes = "first time ted (only for boron?)",
2548 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2551 title = "Rapid annealing and the anomalous diffusion of ion
2552 implanted boron into silicon",
2555 journal = "Applied Physics Letters",
2559 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2560 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2561 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2562 URL = "http://link.aip.org/link/?APL/50/416/1",
2563 doi = "10.1063/1.98160",
2564 notes = "ted of boron in si",
2568 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2571 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2572 time, and matrix dependence of atomic and electrical
2576 journal = "Journal of Applied Physics",
2579 pages = "6191--6198",
2580 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2581 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2582 CRYSTALS; AMORPHIZATION",
2583 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2584 doi = "10.1063/1.346910",
2585 notes = "ted of boron in si",
2589 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2590 F. W. Saris and W. Vandervorst",
2592 title = "Role of {C} and {B} clusters in transient diffusion of
2596 journal = "Appl. Phys. Lett.",
2599 pages = "1150--1152",
2600 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2601 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2603 URL = "http://link.aip.org/link/?APL/68/1150/1",
2604 doi = "10.1063/1.115706",
2605 notes = "suppression of transient enhanced diffusion (ted)",
2609 title = "Implantation and transient boron diffusion: the role
2610 of the silicon self-interstitial",
2611 journal = "Nucl. Instrum. Methods Phys. Res. B",
2616 note = "Selected Papers of the Tenth International Conference
2617 on Ion Implantation Technology (IIT '94)",
2619 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2620 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2621 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2626 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2627 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2628 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2631 title = "Physical mechanisms of transient enhanced dopant
2632 diffusion in ion-implanted silicon",
2635 journal = "J. Appl. Phys.",
2638 pages = "6031--6050",
2639 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2640 doi = "10.1063/1.364452",
2641 notes = "ted, transient enhanced diffusion, c silicon trap",
2645 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2647 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2648 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2651 journal = "Appl. Phys. Lett.",
2655 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2656 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2657 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2659 URL = "http://link.aip.org/link/?APL/64/324/1",
2660 doi = "10.1063/1.111195",
2661 notes = "beta sic nano crystals in si, mbe, annealing",
2665 author = "Richard A. Soref",
2667 title = "Optical band gap of the ternary semiconductor Si[sub 1
2668 - x - y]Ge[sub x]{C}[sub y]",
2671 journal = "J. Appl. Phys.",
2674 pages = "2470--2472",
2675 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2676 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2678 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2679 doi = "10.1063/1.349403",
2680 notes = "band gap of strained si by c",
2684 author = "E Kasper",
2685 title = "Superlattices of group {IV} elements, a new
2686 possibility to produce direct band gap material",
2687 journal = "Physica Scripta",
2690 URL = "http://stacks.iop.org/1402-4896/T35/232",
2692 notes = "superlattices, convert indirect band gap into a
2697 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2700 title = "Growth and strain compensation effects in the ternary
2701 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2704 journal = "Applied Physics Letters",
2707 pages = "3033--3035",
2708 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2709 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2710 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2711 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2713 URL = "http://link.aip.org/link/?APL/60/3033/1",
2714 doi = "10.1063/1.106774",
2718 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2721 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2725 journal = "J. Vac. Sci. Technol. B",
2728 pages = "1064--1068",
2729 location = "Ottawa (Canada)",
2730 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2731 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2732 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2733 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2734 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2735 doi = "10.1116/1.587008",
2736 notes = "substitutional c in si by mbe",
2739 @Article{powell93_2,
2740 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2741 of the ternary system",
2742 journal = "Journal of Crystal Growth",
2749 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2750 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2751 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2756 author = "H. J. Osten",
2757 title = "Modification of Growth Modes in Lattice-Mismatched
2758 Epitaxial Systems: Si/Ge",
2759 journal = "physica status solidi (a)",
2762 publisher = "WILEY-VCH Verlag",
2764 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2765 doi = "10.1002/pssa.2211450203",
2770 @Article{dietrich94,
2771 title = "Lattice distortion in a strain-compensated
2772 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2773 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2774 Methfessel and P. Zaumseil",
2775 journal = "Phys. Rev. B",
2778 pages = "17185--17190",
2782 doi = "10.1103/PhysRevB.49.17185",
2783 publisher = "American Physical Society",
2787 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2789 title = "Growth of an inverse tetragonal distorted SiGe layer
2790 on Si(001) by adding small amounts of carbon",
2793 journal = "Applied Physics Letters",
2796 pages = "3440--3442",
2797 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2798 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2799 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2801 URL = "http://link.aip.org/link/?APL/64/3440/1",
2802 doi = "10.1063/1.111235",
2803 notes = "inversely strained / distorted heterostructure",
2807 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2808 LeGoues and J. C. Tsang and F. Cardone",
2810 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2811 molecular beam epitaxy",
2814 journal = "Applied Physics Letters",
2818 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2819 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2820 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2821 FILM GROWTH; MICROSTRUCTURE",
2822 URL = "http://link.aip.org/link/?APL/60/356/1",
2823 doi = "10.1063/1.106655",
2827 author = "H. J. Osten and J. Griesche and S. Scalese",
2829 title = "Substitutional carbon incorporation in epitaxial
2830 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2831 molecular beam epitaxy",
2834 journal = "Appl. Phys. Lett.",
2838 keywords = "molecular beam epitaxial growth; semiconductor growth;
2839 wide band gap semiconductors; interstitials; silicon
2841 URL = "http://link.aip.org/link/?APL/74/836/1",
2842 doi = "10.1063/1.123384",
2843 notes = "substitutional c in si by mbe",
2847 author = "M. Born and R. Oppenheimer",
2848 title = "Zur Quantentheorie der Molekeln",
2849 journal = "Annalen der Physik",
2852 publisher = "WILEY-VCH Verlag",
2854 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2855 doi = "10.1002/andp.19273892002",
2860 @Article{hohenberg64,
2861 title = "Inhomogeneous Electron Gas",
2862 author = "P. Hohenberg and W. Kohn",
2863 journal = "Phys. Rev.",
2866 pages = "B864--B871",
2870 doi = "10.1103/PhysRev.136.B864",
2871 publisher = "American Physical Society",
2872 notes = "density functional theory, dft",
2876 title = "Self-Consistent Equations Including Exchange and
2877 Correlation Effects",
2878 author = "W. Kohn and L. J. Sham",
2879 journal = "Phys. Rev.",
2882 pages = "A1133--A1138",
2886 doi = "10.1103/PhysRev.140.A1133",
2887 publisher = "American Physical Society",
2888 notes = "dft, exchange and correlation",
2892 title = {Nobel Lecture: Electronic structure of matter---wave functions and density functionals},
2893 author = {Kohn, W. },
2894 journal = {Rev. Mod. Phys.},
2897 pages = {1253--1266},
2901 doi = {10.1103/RevModPhys.71.1253},
2902 publisher = {American Physical Society}
2906 title = "Strain-stabilized highly concentrated pseudomorphic
2907 $Si1-x$$Cx$ layers in Si",
2908 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2910 journal = "Phys. Rev. Lett.",
2913 pages = "3578--3581",
2917 doi = "10.1103/PhysRevLett.72.3578",
2918 publisher = "American Physical Society",
2919 notes = "high c concentration in si, heterostructure, strained
2924 title = "Phosphorous Doping of Strain-Induced
2925 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2926 by Low-Temperature Chemical Vapor Deposition",
2927 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2928 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2929 journal = "Japanese Journal of Applied Physics",
2931 number = "Part 1, No. 4B",
2932 pages = "2472--2475",
2935 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2936 doi = "10.1143/JJAP.41.2472",
2937 publisher = "The Japan Society of Applied Physics",
2938 notes = "experimental charge carrier mobility in strained si",
2942 title = "Electron Transport Model for Strained Silicon-Carbon
2944 author = "Shu-Tong Chang and Chung-Yi Lin",
2945 journal = "Japanese J. Appl. Phys.",
2948 pages = "2257--2262",
2951 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2952 doi = "10.1143/JJAP.44.2257",
2953 publisher = "The Japan Society of Applied Physics",
2954 notes = "enhance of electron mobility in strained si",
2957 @Article{kissinger94,
2958 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2961 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2962 y] layers on Si(001)",
2965 journal = "Applied Physics Letters",
2968 pages = "3356--3358",
2969 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2970 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2971 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2972 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2973 URL = "http://link.aip.org/link/?APL/65/3356/1",
2974 doi = "10.1063/1.112390",
2975 notes = "strained si influence on optical properties",
2979 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2982 title = "Substitutional versus interstitial carbon
2983 incorporation during pseudomorphic growth of Si[sub 1 -
2984 y]{C}[sub y] on Si(001)",
2987 journal = "Journal of Applied Physics",
2990 pages = "6711--6715",
2991 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2992 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2994 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2995 doi = "10.1063/1.363797",
2996 notes = "mbe substitutional vs interstitial c incorporation",
3000 author = "H. J. Osten and P. Gaworzewski",
3002 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3003 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3007 journal = "J. Appl. Phys.",
3010 pages = "4977--4981",
3011 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3012 semiconductors; semiconductor epitaxial layers; carrier
3013 density; Hall mobility; interstitials; defect states",
3014 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3015 doi = "10.1063/1.366364",
3016 notes = "charge transport in strained si",
3020 title = "Carbon-mediated aggregation of self-interstitials in
3021 silicon: {A} large-scale molecular dynamics study",
3022 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3023 journal = "Phys. Rev. B",
3030 doi = "10.1103/PhysRevB.69.155214",
3031 publisher = "American Physical Society",
3032 notes = "simulation using promising tersoff reparametrization",
3036 title = "Event-Based Relaxation of Continuous Disordered
3038 author = "G. T. Barkema and Normand Mousseau",
3039 journal = "Phys. Rev. Lett.",
3042 pages = "4358--4361",
3046 doi = "10.1103/PhysRevLett.77.4358",
3047 publisher = "American Physical Society",
3048 notes = "activation relaxation technique, art, speed up slow
3053 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3054 Minoukadeh and F. Willaime",
3056 title = "Some improvements of the activation-relaxation
3057 technique method for finding transition pathways on
3058 potential energy surfaces",
3061 journal = "J. Chem. Phys.",
3067 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3068 surfaces; vacancies (crystal)",
3069 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3070 doi = "10.1063/1.3088532",
3071 notes = "improvements to art, refs for methods to find
3072 transition pathways",
3075 @Article{parrinello81,
3076 author = "M. Parrinello and A. Rahman",
3078 title = "Polymorphic transitions in single crystals: {A} new
3079 molecular dynamics method",
3082 journal = "J. Appl. Phys.",
3085 pages = "7182--7190",
3086 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3087 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3088 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3089 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3090 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3092 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3093 doi = "10.1063/1.328693",
3096 @Article{stillinger85,
3097 title = "Computer simulation of local order in condensed phases
3099 author = "Frank H. Stillinger and Thomas A. Weber",
3100 journal = "Phys. Rev. B",
3103 pages = "5262--5271",
3107 doi = "10.1103/PhysRevB.31.5262",
3108 publisher = "American Physical Society",
3112 title = "Empirical potential for hydrocarbons for use in
3113 simulating the chemical vapor deposition of diamond
3115 author = "Donald W. Brenner",
3116 journal = "Phys. Rev. B",
3119 pages = "9458--9471",
3123 doi = "10.1103/PhysRevB.42.9458",
3124 publisher = "American Physical Society",
3125 notes = "brenner hydro carbons",
3129 title = "Modeling of Covalent Bonding in Solids by Inversion of
3130 Cohesive Energy Curves",
3131 author = "Martin Z. Bazant and Efthimios Kaxiras",
3132 journal = "Phys. Rev. Lett.",
3135 pages = "4370--4373",
3139 doi = "10.1103/PhysRevLett.77.4370",
3140 publisher = "American Physical Society",
3141 notes = "first si edip",
3145 title = "Environment-dependent interatomic potential for bulk
3147 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3149 journal = "Phys. Rev. B",
3152 pages = "8542--8552",
3156 doi = "10.1103/PhysRevB.56.8542",
3157 publisher = "American Physical Society",
3158 notes = "second si edip",
3162 title = "Interatomic potential for silicon defects and
3164 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3165 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3166 journal = "Phys. Rev. B",
3169 pages = "2539--2550",
3173 doi = "10.1103/PhysRevB.58.2539",
3174 publisher = "American Physical Society",
3175 notes = "latest si edip, good dislocation explanation",
3179 title = "{PARCAS} molecular dynamics code",
3180 author = "K. Nordlund",
3185 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3187 author = "Arthur F. Voter",
3188 journal = "Phys. Rev. Lett.",
3191 pages = "3908--3911",
3195 doi = "10.1103/PhysRevLett.78.3908",
3196 publisher = "American Physical Society",
3197 notes = "hyperdynamics, accelerated md",
3201 author = "Arthur F. Voter",
3203 title = "A method for accelerating the molecular dynamics
3204 simulation of infrequent events",
3207 journal = "J. Chem. Phys.",
3210 pages = "4665--4677",
3211 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3212 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3213 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3214 energy functions; surface diffusion; reaction kinetics
3215 theory; potential energy surfaces",
3216 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3217 doi = "10.1063/1.473503",
3218 notes = "improved hyperdynamics md",
3221 @Article{sorensen2000,
3222 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3224 title = "Temperature-accelerated dynamics for simulation of
3228 journal = "J. Chem. Phys.",
3231 pages = "9599--9606",
3232 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3233 MOLECULAR DYNAMICS METHOD; surface diffusion",
3234 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3235 doi = "10.1063/1.481576",
3236 notes = "temperature accelerated dynamics, tad",
3240 title = "Parallel replica method for dynamics of infrequent
3242 author = "Arthur F. Voter",
3243 journal = "Phys. Rev. B",
3246 pages = "R13985--R13988",
3250 doi = "10.1103/PhysRevB.57.R13985",
3251 publisher = "American Physical Society",
3252 notes = "parallel replica method, accelerated md",
3256 author = "Xiongwu Wu and Shaomeng Wang",
3258 title = "Enhancing systematic motion in molecular dynamics
3262 journal = "J. Chem. Phys.",
3265 pages = "9401--9410",
3266 keywords = "molecular dynamics method; argon; Lennard-Jones
3267 potential; crystallisation; liquid theory",
3268 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3269 doi = "10.1063/1.478948",
3270 notes = "self guided md, sgmd, accelerated md, enhancing
3274 @Article{choudhary05,
3275 author = "Devashish Choudhary and Paulette Clancy",
3277 title = "Application of accelerated molecular dynamics schemes
3278 to the production of amorphous silicon",
3281 journal = "J. Chem. Phys.",
3287 keywords = "molecular dynamics method; silicon; glass structure;
3288 amorphous semiconductors",
3289 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3290 doi = "10.1063/1.1878733",
3291 notes = "explanation of sgmd and hyper md, applied to amorphous
3296 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3298 title = "Carbon precipitation in silicon: Why is it so
3302 journal = "Appl. Phys. Lett.",
3305 pages = "3336--3338",
3306 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3307 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3309 URL = "http://link.aip.org/link/?APL/62/3336/1",
3310 doi = "10.1063/1.109063",
3311 notes = "interfacial energy of cubic sic and si, si self
3312 interstitials necessary for precipitation, volume
3313 decrease, high interface energy",
3316 @Article{chaussende08,
3317 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3318 journal = "J. Cryst. Growth",
3323 note = "Proceedings of the E-MRS Conference, Symposium G -
3324 Substrates of Wide Bandgap Materials",
3326 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3327 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3328 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3329 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3330 and A. Andreadou and E. K. Polychroniadis and C.
3331 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3332 notes = "3c-sic crystal growth, sic fabrication + links,
3336 @Article{chaussende07,
3337 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3338 title = "Status of Si{C} bulk growth processes",
3339 journal = "Journal of Physics D: Applied Physics",
3343 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3345 notes = "review of sic single crystal growth methods, process
3350 title = "Forces in Molecules",
3351 author = "R. P. Feynman",
3352 journal = "Phys. Rev.",
3359 doi = "10.1103/PhysRev.56.340",
3360 publisher = "American Physical Society",
3361 notes = "hellmann feynman forces",
3365 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3366 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3367 their Contrasting Properties",
3368 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3370 journal = "Phys. Rev. Lett.",
3377 doi = "10.1103/PhysRevLett.84.943",
3378 publisher = "American Physical Society",
3379 notes = "si sio2 and sic sio2 interface",
3382 @Article{djurabekova08,
3383 title = "Atomistic simulation of the interface structure of Si
3384 nanocrystals embedded in amorphous silica",
3385 author = "Flyura Djurabekova and Kai Nordlund",
3386 journal = "Phys. Rev. B",
3393 doi = "10.1103/PhysRevB.77.115325",
3394 publisher = "American Physical Society",
3395 notes = "nc-si in sio2, interface energy, nc construction,
3396 angular distribution, coordination",
3400 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3401 W. Liang and J. Zou",
3403 title = "Nature of interfacial defects and their roles in
3404 strain relaxation at highly lattice mismatched
3405 3{C}-Si{C}/Si (001) interface",
3408 journal = "J. Appl. Phys.",
3414 keywords = "anelastic relaxation; crystal structure; dislocations;
3415 elemental semiconductors; semiconductor growth;
3416 semiconductor thin films; silicon; silicon compounds;
3417 stacking faults; wide band gap semiconductors",
3418 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3419 doi = "10.1063/1.3234380",
3420 notes = "sic/si interface, follow refs, tem image
3421 deconvolution, dislocation defects",
3424 @Article{kitabatake93,
3425 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3428 title = "Simulations and experiments of Si{C} heteroepitaxial
3429 growth on Si(001) surface",
3432 journal = "J. Appl. Phys.",
3435 pages = "4438--4445",
3436 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3437 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3438 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3439 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3440 doi = "10.1063/1.354385",
3441 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3445 @Article{kitabatake97,
3446 author = "Makoto Kitabatake",
3447 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3448 Heteroepitaxial Growth",
3449 publisher = "WILEY-VCH Verlag",
3451 journal = "physica status solidi (b)",
3454 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3455 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3456 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3460 title = "Strain relaxation and thermal stability of the
3461 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3463 journal = "Thin Solid Films",
3470 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3471 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3472 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3473 keywords = "Strain relaxation",
3474 keywords = "Interfaces",
3475 keywords = "Thermal stability",
3476 keywords = "Molecular dynamics",
3477 notes = "tersoff sic/si interface study",
3481 title = "Ab initio Study of Misfit Dislocations at the
3482 $Si{C}/Si(001)$ Interface",
3483 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3485 journal = "Phys. Rev. Lett.",
3492 doi = "10.1103/PhysRevLett.89.156101",
3493 publisher = "American Physical Society",
3494 notes = "sic/si interface study",
3497 @Article{pizzagalli03,
3498 title = "Theoretical investigations of a highly mismatched
3499 interface: Si{C}/Si(001)",
3500 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3502 journal = "Phys. Rev. B",
3509 doi = "10.1103/PhysRevB.68.195302",
3510 publisher = "American Physical Society",
3511 notes = "tersoff md and ab initio sic/si interface study",
3515 title = "Atomic configurations of dislocation core and twin
3516 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3517 electron microscopy",
3518 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3519 H. Zheng and J. W. Liang",
3520 journal = "Phys. Rev. B",
3527 doi = "10.1103/PhysRevB.75.184103",
3528 publisher = "American Physical Society",
3529 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3533 @Article{hornstra58,
3534 title = "Dislocations in the diamond lattice",
3535 journal = "Journal of Physics and Chemistry of Solids",
3542 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3543 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3544 author = "J. Hornstra",
3545 notes = "dislocations in diamond lattice",
3549 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3550 Ion `Hot' Implantation",
3551 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3552 Hirao and Naoki Arai and Tomio Izumi",
3553 journal = "Japanese J. Appl. Phys.",
3555 number = "Part 1, No. 2A",
3559 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3560 doi = "10.1143/JJAP.31.343",
3561 publisher = "The Japan Society of Applied Physics",
3562 notes = "c-c bonds in c implanted si, hot implantation
3563 efficiency, c-c hard to break by thermal annealing",
3566 @Article{eichhorn99,
3567 author = "F. Eichhorn and N. Schell and W. Matz and R.
3570 title = "Strain and Si{C} particle formation in silicon
3571 implanted with carbon ions of medium fluence studied by
3572 synchrotron x-ray diffraction",
3575 journal = "J. Appl. Phys.",
3578 pages = "4184--4187",
3579 keywords = "silicon; carbon; elemental semiconductors; chemical
3580 interdiffusion; ion implantation; X-ray diffraction;
3581 precipitation; semiconductor doping",
3582 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3583 doi = "10.1063/1.371344",
3584 notes = "sic conversion by ibs, detected substitutional carbon,
3585 expansion of si lattice",
3588 @Article{eichhorn02,
3589 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3590 Metzger and W. Matz and R. K{\"{o}}gler",
3592 title = "Structural relation between Si and Si{C} formed by
3593 carbon ion implantation",
3596 journal = "J. Appl. Phys.",
3599 pages = "1287--1292",
3600 keywords = "silicon compounds; wide band gap semiconductors; ion
3601 implantation; annealing; X-ray scattering; transmission
3602 electron microscopy",
3603 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3604 doi = "10.1063/1.1428105",
3605 notes = "3c-sic alignement to si host in ibs depending on
3606 temperature, might explain c into c sub trafo",
3610 author = "G Lucas and M Bertolus and L Pizzagalli",
3611 title = "An environment-dependent interatomic potential for
3612 silicon carbide: calculation of bulk properties,
3613 high-pressure phases, point and extended defects, and
3614 amorphous structures",
3615 journal = "J. Phys.: Condens. Matter",
3619 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3625 author = "J Godet and L Pizzagalli and S Brochard and P
3627 title = "Comparison between classical potentials and ab initio
3628 methods for silicon under large shear",
3629 journal = "J. Phys.: Condens. Matter",
3633 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3635 notes = "comparison of empirical potentials, stillinger weber,
3636 edip, tersoff, ab initio",
3639 @Article{moriguchi98,
3640 title = "Verification of Tersoff's Potential for Static
3641 Structural Analysis of Solids of Group-{IV} Elements",
3642 author = "Koji Moriguchi and Akira Shintani",
3643 journal = "Japanese J. Appl. Phys.",
3645 number = "Part 1, No. 2",
3649 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3650 doi = "10.1143/JJAP.37.414",
3651 publisher = "The Japan Society of Applied Physics",
3652 notes = "tersoff stringent test",
3655 @Article{mazzarolo01,
3656 title = "Low-energy recoils in crystalline silicon: Quantum
3658 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3659 Lulli and Eros Albertazzi",
3660 journal = "Phys. Rev. B",
3667 doi = "10.1103/PhysRevB.63.195207",
3668 publisher = "American Physical Society",
3671 @Article{holmstroem08,
3672 title = "Threshold defect production in silicon determined by
3673 density functional theory molecular dynamics
3675 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3676 journal = "Phys. Rev. B",
3683 doi = "10.1103/PhysRevB.78.045202",
3684 publisher = "American Physical Society",
3685 notes = "threshold displacement comparison empirical and ab
3689 @Article{nordlund97,
3690 title = "Repulsive interatomic potentials calculated using
3691 Hartree-Fock and density-functional theory methods",
3692 journal = "Nucl. Instrum. Methods Phys. Res. B",
3699 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3700 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3701 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3702 notes = "repulsive ab initio potential",
3706 title = "Efficiency of ab-initio total energy calculations for
3707 metals and semiconductors using a plane-wave basis
3709 journal = "Comput. Mater. Sci.",
3716 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3717 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3718 author = "G. Kresse and J. Furthm{\"{u}}ller",
3723 title = "Projector augmented-wave method",
3724 author = "P. E. Bl{\"o}chl",
3725 journal = "Phys. Rev. B",
3728 pages = "17953--17979",
3732 doi = "10.1103/PhysRevB.50.17953",
3733 publisher = "American Physical Society",
3734 notes = "paw method",
3738 title = "Norm-Conserving Pseudopotentials",
3739 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3740 journal = "Phys. Rev. Lett.",
3743 pages = "1494--1497",
3747 doi = "10.1103/PhysRevLett.43.1494",
3748 publisher = "American Physical Society",
3749 notes = "norm-conserving pseudopotentials",
3752 @Article{vanderbilt90,
3753 title = "Soft self-consistent pseudopotentials in a generalized
3754 eigenvalue formalism",
3755 author = "David Vanderbilt",
3756 journal = "Phys. Rev. B",
3759 pages = "7892--7895",
3763 doi = "10.1103/PhysRevB.41.7892",
3764 publisher = "American Physical Society",
3765 notes = "vasp pseudopotentials",
3769 title = "Accurate and simple density functional for the
3770 electronic exchange energy: Generalized gradient
3772 author = "John P. Perdew and Yue Wang",
3773 journal = "Phys. Rev. B",
3776 pages = "8800--8802",
3780 doi = "10.1103/PhysRevB.33.8800",
3781 publisher = "American Physical Society",
3782 notes = "rapid communication gga",
3786 title = "Generalized gradient approximations for exchange and
3787 correlation: {A} look backward and forward",
3788 journal = "Physica B: Condensed Matter",
3795 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3796 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3797 author = "John P. Perdew",
3798 notes = "gga overview",
3802 title = "Atoms, molecules, solids, and surfaces: Applications
3803 of the generalized gradient approximation for exchange
3805 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3806 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3807 and Carlos Fiolhais",
3808 journal = "Phys. Rev. B",
3811 pages = "6671--6687",
3815 doi = "10.1103/PhysRevB.46.6671",
3816 publisher = "American Physical Society",
3817 notes = "gga pw91 (as in vasp)",
3820 @Article{baldereschi73,
3821 title = "Mean-Value Point in the Brillouin Zone",
3822 author = "A. Baldereschi",
3823 journal = "Phys. Rev. B",
3826 pages = "5212--5215",
3830 doi = "10.1103/PhysRevB.7.5212",
3831 publisher = "American Physical Society",
3832 notes = "mean value k point",
3836 title = "Ab initio pseudopotential calculations of dopant
3838 journal = "Comput. Mater. Sci.",
3845 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3846 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3847 author = "Jing Zhu",
3848 keywords = "TED (transient enhanced diffusion)",
3849 keywords = "Boron dopant",
3850 keywords = "Carbon dopant",
3851 keywords = "Defect",
3852 keywords = "ab initio pseudopotential method",
3853 keywords = "Impurity cluster",
3854 notes = "binding of c to si interstitial, c in si defects",
3858 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3860 title = "Si{C} buried layer formation by ion beam synthesis at
3864 journal = "Appl. Phys. Lett.",
3867 pages = "2646--2648",
3868 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3869 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3870 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3871 ELECTRON MICROSCOPY",
3872 URL = "http://link.aip.org/link/?APL/66/2646/1",
3873 doi = "10.1063/1.113112",
3874 notes = "precipitation mechanism by substitutional carbon, si
3875 self interstitials react with further implanted c",
3879 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3880 Kolodzey and A. Hairie",
3882 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3886 journal = "J. Appl. Phys.",
3889 pages = "4631--4633",
3890 keywords = "silicon compounds; precipitation; localised modes;
3891 semiconductor epitaxial layers; infrared spectra;
3892 Fourier transform spectra; thermal stability;
3894 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3895 doi = "10.1063/1.368703",
3896 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3900 author = "R Jones and B J Coomer and P R Briddon",
3901 title = "Quantum mechanical modelling of defects in
3903 journal = "J. Phys.: Condens. Matter",
3907 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3909 notes = "ab inito dft intro, vibrational modes, c defect in
3914 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3915 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3916 J. E. Greene and S. G. Bishop",
3918 title = "Carbon incorporation pathways and lattice sites in
3919 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3920 molecular-beam epitaxy",
3923 journal = "J. Appl. Phys.",
3926 pages = "5716--5727",
3927 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3928 doi = "10.1063/1.1465122",
3929 notes = "c substitutional incorporation pathway, dft and expt",
3933 title = "Dynamic properties of interstitial carbon and
3934 carbon-carbon pair defects in silicon",
3935 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3937 journal = "Phys. Rev. B",
3940 pages = "2188--2194",
3944 doi = "10.1103/PhysRevB.55.2188",
3945 publisher = "American Physical Society",
3946 notes = "ab initio c in si and di-carbon defect, no formation
3947 energies, different migration barriers and paths",
3951 title = "Interstitial carbon and the carbon-carbon pair in
3952 silicon: Semiempirical electronic-structure
3954 author = "Matthew J. Burnard and Gary G. DeLeo",
3955 journal = "Phys. Rev. B",
3958 pages = "10217--10225",
3962 doi = "10.1103/PhysRevB.47.10217",
3963 publisher = "American Physical Society",
3964 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3965 carbon defect, formation energies",
3969 title = "Electronic structure of interstitial carbon in
3971 author = "Morgan Besson and Gary G. DeLeo",
3972 journal = "Phys. Rev. B",
3975 pages = "4028--4033",
3979 doi = "10.1103/PhysRevB.43.4028",
3980 publisher = "American Physical Society",
3984 title = "Review of atomistic simulations of surface diffusion
3985 and growth on semiconductors",
3986 journal = "Comput. Mater. Sci.",
3991 note = "Proceedings of the Workshop on Virtual Molecular Beam
3994 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3995 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3996 author = "Efthimios Kaxiras",
3997 notes = "might contain c 100 db formation energy, overview md,
3998 tight binding, first principles",
4001 @Article{kaukonen98,
4002 title = "Effect of {N} and {B} doping on the growth of {CVD}
4004 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4006 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4007 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4009 journal = "Phys. Rev. B",
4012 pages = "9965--9970",
4016 doi = "10.1103/PhysRevB.57.9965",
4017 publisher = "American Physical Society",
4018 notes = "constrained conjugate gradient relaxation technique
4023 title = "Correlation between the antisite pair and the ${DI}$
4025 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4026 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4028 journal = "Phys. Rev. B",
4035 doi = "10.1103/PhysRevB.67.155203",
4036 publisher = "American Physical Society",
4040 title = "Production and recovery of defects in Si{C} after
4041 irradiation and deformation",
4042 journal = "J. Nucl. Mater.",
4045 pages = "1803--1808",
4049 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4050 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4051 author = "J. Chen and P. Jung and H. Klein",
4055 title = "Accumulation, dynamic annealing and thermal recovery
4056 of ion-beam-induced disorder in silicon carbide",
4057 journal = "Nucl. Instrum. Methods Phys. Res. B",
4064 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4065 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4066 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4069 @Article{bockstedte03,
4070 title = "Ab initio study of the migration of intrinsic defects
4072 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4074 journal = "Phys. Rev. B",
4081 doi = "10.1103/PhysRevB.68.205201",
4082 publisher = "American Physical Society",
4083 notes = "defect migration in sic",
4087 title = "Theoretical study of vacancy diffusion and
4088 vacancy-assisted clustering of antisites in Si{C}",
4089 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4091 journal = "Phys. Rev. B",
4098 doi = "10.1103/PhysRevB.68.155208",
4099 publisher = "American Physical Society",
4103 journal = "Telegrafiya i Telefoniya bez Provodov",
4107 author = "O. V. Lossev",
4111 title = "Luminous carborundum detector and detection effect and
4112 oscillations with crystals",
4113 journal = "Philosophical Magazine Series 7",
4116 pages = "1024--1044",
4118 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4119 author = "O. V. Lossev",
4123 journal = "Physik. Zeitschr.",
4127 author = "O. V. Lossev",
4131 journal = "Physik. Zeitschr.",
4135 author = "O. V. Lossev",
4139 journal = "Physik. Zeitschr.",
4143 author = "O. V. Lossev",
4147 title = "A note on carborundum",
4148 journal = "Electrical World",
4152 author = "H. J. Round",
4155 @Article{vashishath08,
4156 title = "Recent trends in silicon carbide device research",
4157 journal = "Mj. Int. J. Sci. Tech.",
4162 author = "Munish Vashishath and Ashoke K. Chatterjee",
4163 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4164 notes = "sic polytype electronic properties",
4168 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4170 title = "Growth and Properties of beta-Si{C} Single Crystals",
4173 journal = "Journal of Applied Physics",
4177 URL = "http://link.aip.org/link/?JAP/37/333/1",
4178 doi = "10.1063/1.1707837",
4179 notes = "sic melt growth",
4183 author = "A. E. van Arkel and J. H. de Boer",
4184 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4186 publisher = "WILEY-VCH Verlag GmbH",
4188 journal = "Z. Anorg. Chem.",
4191 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4192 doi = "10.1002/zaac.19251480133",
4193 notes = "van arkel apparatus",
4197 author = "K. Moers",
4199 journal = "Z. Anorg. Chem.",
4202 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4207 author = "J. T. Kendall",
4208 title = "Electronic Conduction in Silicon Carbide",
4211 journal = "The Journal of Chemical Physics",
4215 URL = "http://link.aip.org/link/?JCP/21/821/1",
4216 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4221 author = "J. A. Lely",
4223 journal = "Ber. Deut. Keram. Ges.",
4226 notes = "lely sublimation growth process",
4229 @Article{knippenberg63,
4230 author = "W. F. Knippenberg",
4232 journal = "Philips Res. Repts.",
4235 notes = "acheson process",
4238 @Article{hoffmann82,
4239 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4242 title = "Silicon carbide blue light emitting diodes with
4243 improved external quantum efficiency",
4246 journal = "Journal of Applied Physics",
4249 pages = "6962--6967",
4250 keywords = "light emitting diodes; silicon carbides; quantum
4251 efficiency; visible radiation; experimental data;
4252 epitaxy; fabrication; medium temperature; layers;
4253 aluminium; nitrogen; substrates; pn junctions;
4254 electroluminescence; spectra; current density;
4256 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4257 doi = "10.1063/1.330041",
4258 notes = "blue led, sublimation process",
4262 author = "Philip Neudeck",
4263 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4264 Road 44135 Cleveland OH",
4265 title = "Progress in silicon carbide semiconductor electronics
4267 journal = "Journal of Electronic Materials",
4268 publisher = "Springer Boston",
4270 keyword = "Chemistry and Materials Science",
4274 URL = "http://dx.doi.org/10.1007/BF02659688",
4275 note = "10.1007/BF02659688",
4277 notes = "sic data, advantages of 3c sic",
4280 @Article{bhatnagar93,
4281 author = "M. Bhatnagar and B. J. Baliga",
4282 journal = "Electron Devices, IEEE Transactions on",
4283 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4290 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4291 rectifiers;Si;SiC;breakdown voltages;drift region
4292 properties;output characteristics;power MOSFETs;power
4293 semiconductor devices;switching characteristics;thermal
4294 analysis;Schottky-barrier diodes;electric breakdown of
4295 solids;insulated gate field effect transistors;power
4296 transistors;semiconductor materials;silicon;silicon
4297 compounds;solid-state rectifiers;thermal analysis;",
4298 doi = "10.1109/16.199372",
4300 notes = "comparison 3c 6h sic and si devices",
4304 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4305 A. Powell and C. S. Salupo and L. G. Matus",
4306 journal = "Electron Devices, IEEE Transactions on",
4307 title = "Electrical properties of epitaxial 3{C}- and
4308 6{H}-Si{C} p-n junction diodes produced side-by-side on
4309 6{H}-Si{C} substrates",
4315 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4316 C;6H-SiC layers;6H-SiC substrates;CVD
4317 process;SiC;chemical vapor deposition;doping;electrical
4318 properties;epitaxial layers;light
4319 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4320 diodes;polytype;rectification characteristics;reverse
4321 leakage current;reverse voltages;temperature;leakage
4322 currents;power electronics;semiconductor
4323 diodes;semiconductor epitaxial layers;semiconductor
4324 growth;semiconductor materials;silicon
4325 compounds;solid-state rectifiers;substrates;vapour
4326 phase epitaxial growth;",
4327 doi = "10.1109/16.285038",
4329 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4334 author = "N. Schulze and D. L. Barrett and G. Pensl",
4336 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4337 single crystals by physical vapor transport",
4340 journal = "Applied Physics Letters",
4343 pages = "1632--1634",
4344 keywords = "silicon compounds; semiconductor materials;
4345 semiconductor growth; crystal growth from vapour;
4346 photoluminescence; Hall mobility",
4347 URL = "http://link.aip.org/link/?APL/72/1632/1",
4348 doi = "10.1063/1.121136",
4349 notes = "micropipe free 6h-sic pvt growth",
4353 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4355 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4358 journal = "Applied Physics Letters",
4362 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4363 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4364 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4365 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4367 URL = "http://link.aip.org/link/?APL/50/221/1",
4368 doi = "10.1063/1.97667",
4369 notes = "apb 3c-sic heteroepitaxy on si",
4372 @Article{shibahara86,
4373 title = "Surface morphology of cubic Si{C}(100) grown on
4374 Si(100) by chemical vapor deposition",
4375 journal = "Journal of Crystal Growth",
4382 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4383 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4384 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4386 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4389 @Article{desjardins96,
4390 author = "P. Desjardins and J. E. Greene",
4392 title = "Step-flow epitaxial growth on two-domain surfaces",
4395 journal = "Journal of Applied Physics",
4398 pages = "1423--1434",
4399 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4400 FILM GROWTH; SURFACE STRUCTURE",
4401 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4402 doi = "10.1063/1.360980",
4403 notes = "apb model",
4407 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4409 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4410 carbonization of silicon",
4413 journal = "Journal of Applied Physics",
4416 pages = "2070--2073",
4417 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4418 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4420 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4421 doi = "10.1063/1.360184",
4422 notes = "ssmbe of sic on si, lower temperatures",
4426 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4427 {MBE} using surface superstructure",
4428 journal = "Journal of Crystal Growth",
4435 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4436 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4437 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4438 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4439 notes = "gas source mbe of 3c-sic on 6h-sic",
4442 @Article{yoshinobu92,
4443 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4444 and Takashi Fuyuki and Hiroyuki Matsunami",
4446 title = "Lattice-matched epitaxial growth of single crystalline
4447 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4448 molecular beam epitaxy",
4451 journal = "Applied Physics Letters",
4455 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4456 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4457 INTERFACE STRUCTURE",
4458 URL = "http://link.aip.org/link/?APL/60/824/1",
4459 doi = "10.1063/1.107430",
4460 notes = "gas source mbe of 3c-sic on 6h-sic",
4463 @Article{yoshinobu90,
4464 title = "Atomic level control in gas source {MBE} growth of
4466 journal = "Journal of Crystal Growth",
4473 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4474 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4475 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4476 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4477 notes = "gas source mbe of 3c-sic on 3c-sic",
4481 title = "Atomic layer epitaxy controlled by surface
4482 superstructures in Si{C}",
4483 journal = "Thin Solid Films",
4490 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4491 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4492 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4494 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4499 title = "Microscopic mechanisms of accurate layer-by-layer
4500 growth of [beta]-Si{C}",
4501 journal = "Thin Solid Films",
4508 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4509 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4510 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4511 and S. Misawa and E. Sakuma and S. Yoshida",
4512 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4517 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4519 title = "Effects of gas flow ratio on silicon carbide thin film
4520 growth mode and polytype formation during gas-source
4521 molecular beam epitaxy",
4524 journal = "Applied Physics Letters",
4527 pages = "2851--2853",
4528 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4529 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4530 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4532 URL = "http://link.aip.org/link/?APL/65/2851/1",
4533 doi = "10.1063/1.112513",
4534 notes = "gas source mbe of 6h-sic on 6h-sic",
4538 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4539 title = "Heterointerface Control and Epitaxial Growth of
4540 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4541 publisher = "WILEY-VCH Verlag",
4543 journal = "physica status solidi (b)",
4546 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4551 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4552 journal = "Journal of Crystal Growth",
4559 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4560 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4561 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4562 keywords = "Reflection high-energy electron diffraction (RHEED)",
4563 keywords = "Scanning electron microscopy (SEM)",
4564 keywords = "Silicon carbide",
4565 keywords = "Silicon",
4566 keywords = "Island growth",
4567 notes = "lower temperature, 550-700",
4570 @Article{hatayama95,
4571 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4572 on Si using hydrocarbon radicals by gas source
4573 molecular beam epitaxy",
4574 journal = "Journal of Crystal Growth",
4581 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4582 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4583 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4584 and Hiroyuki Matsunami",
4588 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4589 title = "The Preference of Silicon Carbide for Growth in the
4590 Metastable Cubic Form",
4591 journal = "Journal of the American Ceramic Society",
4594 publisher = "Blackwell Publishing Ltd",
4596 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4597 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4598 pages = "2630--2633",
4599 keywords = "silicon carbide, crystal growth, crystal structure,
4600 calculations, stability",
4602 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4603 polytype dft calculation refs",
4606 @Article{allendorf91,
4607 title = "The adsorption of {H}-atoms on polycrystalline
4608 [beta]-silicon carbide",
4609 journal = "Surface Science",
4616 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4617 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4618 author = "Mark D. Allendorf and Duane A. Outka",
4619 notes = "h adsorption on 3c-sic",
4622 @Article{eaglesham93,
4623 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4624 D. P. Adams and S. M. Yalisove",
4626 title = "Effect of {H} on Si molecular-beam epitaxy",
4629 journal = "Journal of Applied Physics",
4632 pages = "6615--6618",
4633 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4634 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4635 DIFFUSION; ADSORPTION",
4636 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4637 doi = "10.1063/1.355101",
4638 notes = "h incorporation on si surface, lower surface
4643 author = "Ronald C. Newman",
4644 title = "Carbon in Crystalline Silicon",
4645 journal = "MRS Online Proceedings Library",
4650 doi = "10.1557/PROC-59-403",
4651 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4652 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4656 title = "The diffusivity of carbon in silicon",
4657 journal = "Journal of Physics and Chemistry of Solids",
4664 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4665 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4666 author = "R. C. Newman and J. Wakefield",
4667 notes = "diffusivity of substitutional c in si",
4671 author = "U. Gösele",
4672 title = "The Role of Carbon and Point Defects in Silicon",
4673 journal = "MRS Online Proceedings Library",
4678 doi = "10.1557/PROC-59-419",
4679 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4680 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4683 @Article{mukashev82,
4684 title = "Defects in Carbon-Implanted Silicon",
4685 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4686 Fukuoka and Haruo Saito",
4687 journal = "Japanese Journal of Applied Physics",
4689 number = "Part 1, No. 2",
4693 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4694 doi = "10.1143/JJAP.21.399",
4695 publisher = "The Japan Society of Applied Physics",
4699 title = "Convergence of supercell calculations for point
4700 defects in semiconductors: Vacancy in silicon",
4701 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4703 journal = "Phys. Rev. B",
4706 pages = "1318--1325",
4710 doi = "10.1103/PhysRevB.58.1318",
4711 publisher = "American Physical Society",
4712 notes = "convergence k point supercell size, vacancy in
4717 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4718 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4719 K{\"{o}}gler and W. Skorupa",
4721 title = "Spectroscopic characterization of phases formed by
4722 high-dose carbon ion implantation in silicon",
4725 journal = "Journal of Applied Physics",
4728 pages = "2978--2984",
4729 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4730 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4731 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4732 DEPENDENCE; PRECIPITATES; ANNEALING",
4733 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4734 doi = "10.1063/1.358714",
4737 @Article{romano-rodriguez96,
4738 title = "Detailed analysis of [beta]-Si{C} formation by high
4739 dose carbon ion implantation in silicon",
4740 journal = "Materials Science and Engineering B",
4745 note = "European Materials Research Society 1995 Spring
4746 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4747 Oxygen in Silicon and in Other Elemental
4750 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4751 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4752 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4753 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4755 keywords = "Silicon",
4756 keywords = "Ion implantation",
4757 notes = "incoherent 3c-sic precipitate",