2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 journal = "Phys. Rev. B",
1540 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
1541 publisher = "American Physical Society",
1542 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1543 K. N. Lindner and W. G. Schmidt and E. Rauls",
1544 title = "Combined \textit{ab initio} and classical potential
1545 simulation study on silicon carbide precipitation in
1551 doi = "10.1103/PhysRevB.84.064126",
1553 abstract = "Atomistic simulations on the silicon carbide
1554 precipitation in bulk silicon employing both, classical
1555 potential and first-principles methods are presented.
1556 The calculations aim at a comprehensive, microscopic
1557 understanding of the precipitation mechanism in the
1558 context of controversial discussions in the literature.
1559 For the quantum-mechanical treatment, basic processes
1560 assumed in the precipitation process are calculated in
1561 feasible systems of small size. The migration mechanism
1562 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1563 1 0> self-interstitial in otherwise defect-free silicon
1564 are investigated using density functional theory
1565 calculations. The influence of a nearby vacancy,
1566 another carbon interstitial and a substitutional defect
1567 as well as a silicon self-interstitial has been
1568 investigated systematically. Interactions of various
1569 combinations of defects have been characterized
1570 including a couple of selected migration pathways
1571 within these configurations. Almost all of the
1572 investigated pairs of defects tend to agglomerate
1573 allowing for a reduction in strain. The formation of
1574 structures involving strong carbon-carbon bonds turns
1575 out to be very unlikely. In contrast, substitutional
1576 carbon occurs in all probability. A long range capture
1577 radius has been observed for pairs of interstitial
1578 carbon as well as interstitial carbon and vacancies. A
1579 rather small capture radius is predicted for
1580 substitutional carbon and silicon self-interstitials.
1581 Initial assumptions regarding the precipitation
1582 mechanism of silicon carbide in bulk silicon are
1583 established and conformability to experimental findings
1584 is discussed. Furthermore, results of the accurate
1585 first-principles calculations on defects and carbon
1586 diffusion in silicon are compared to results of
1587 classical potential simulations revealing significant
1588 limitations of the latter method. An approach to work
1589 around this problem is proposed. Finally, results of
1590 the classical potential molecular dynamics simulations
1591 of large systems are examined, which reinforce previous
1592 assumptions and give further insight into basic
1593 processes involved in the silicon carbide transition.",
1597 author = "J. K. N. Lindner and A. Frohnwieser and B.
1598 Rauschenbach and B. Stritzker",
1599 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1601 journal = "MRS Proc.",
1606 doi = "10.1557/PROC-354-171",
1607 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1608 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1609 notes = "first time ibs at moderate temperatures",
1613 title = "Formation of buried epitaxial silicon carbide layers
1614 in silicon by ion beam synthesis",
1615 journal = "Mater. Chem. Phys.",
1622 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1623 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1624 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1625 Götz and A. Frohnwieser and B. Rauschenbach and B.
1627 notes = "dose window",
1630 @Article{calcagno96,
1631 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1633 journal = "Nucl. Instrum. Methods Phys. Res. B",
1638 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1639 New Trends in Ion Beam Processing of Materials",
1641 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1642 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1643 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1644 Grimaldi and P. Musumeci",
1645 notes = "dose window, graphitic bonds",
1649 title = "Mechanisms of Si{C} Formation in the Ion Beam
1650 Synthesis of 3{C}-Si{C} Layers in Silicon",
1651 journal = "Mater. Sci. Forum",
1656 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1657 URL = "http://www.scientific.net/MSF.264-268.215",
1658 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1659 notes = "intermediate temperature for sharp interface + good
1664 title = "Controlling the density distribution of Si{C}
1665 nanocrystals for the ion beam synthesis of buried Si{C}
1667 journal = "Nucl. Instrum. Methods Phys. Res. B",
1674 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1675 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1676 author = "J. K. N. Lindner and B. Stritzker",
1677 notes = "two-step implantation process",
1680 @Article{lindner99_2,
1681 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1683 journal = "Nucl. Instrum. Methods Phys. Res. B",
1689 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1690 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1691 author = "J. K. N. Lindner and B. Stritzker",
1692 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1696 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1697 Basic physical processes",
1698 journal = "Nucl. Instrum. Methods Phys. Res. B",
1705 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1706 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1707 author = "J{\"{o}}rg K. N. Lindner",
1711 title = "High-dose carbon implantations into silicon:
1712 fundamental studies for new technological tricks",
1713 author = "J. K. N. Lindner",
1714 journal = "Appl. Phys. A",
1718 doi = "10.1007/s00339-002-2062-8",
1719 notes = "ibs, burried sic layers",
1723 title = "On the balance between ion beam induced nanoparticle
1724 formation and displacive precipitate resolution in the
1726 journal = "Mater. Sci. Eng., C",
1731 note = "Current Trends in Nanoscience - from Materials to
1734 doi = "DOI: 10.1016/j.msec.2005.09.099",
1735 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1736 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1738 notes = "c int diffusion barrier",
1741 @Article{haeberlen10,
1742 title = "Structural characterization of cubic and hexagonal
1743 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
1744 journal = "Journal of Crystal Growth",
1751 doi = "10.1016/j.jcrysgro.2009.12.048",
1752 URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
1753 author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
1754 K. N. Lindner and B. Stritzker",
1758 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1759 application in buffer layer for Ga{N} epitaxial
1761 journal = "Appl. Surf. Sci.",
1766 note = "APHYS'03 Special Issue",
1768 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1769 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1770 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1771 and S. Nishio and K. Yasuda and Y. Ishigami",
1772 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1775 @Article{yamamoto04,
1776 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1777 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1778 implantation into Si(1 1 1) substrate",
1779 journal = "J. Cryst. Growth",
1784 note = "Proceedings of the 11th Biennial (US) Workshop on
1785 Organometallic Vapor Phase Epitaxy (OMVPE)",
1787 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1788 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1789 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1790 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1791 notes = "gan on 3c-sic",
1795 title = "Substrates for gallium nitride epitaxy",
1796 journal = "Mater. Sci. Eng., R",
1803 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1804 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1805 author = "L. Liu and J. H. Edgar",
1806 notes = "gan substrates",
1809 @Article{takeuchi91,
1810 title = "Growth of single crystalline Ga{N} film on Si
1811 substrate using 3{C}-Si{C} as an intermediate layer",
1812 journal = "J. Cryst. Growth",
1819 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1820 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1821 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1822 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1823 notes = "gan on 3c-sic (first time?)",
1827 author = "B. J. Alder and T. E. Wainwright",
1828 title = "Phase Transition for a Hard Sphere System",
1831 journal = "J. Chem. Phys.",
1834 pages = "1208--1209",
1835 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1836 doi = "10.1063/1.1743957",
1840 author = "B. J. Alder and T. E. Wainwright",
1841 title = "Studies in Molecular Dynamics. {I}. General Method",
1844 journal = "J. Chem. Phys.",
1848 URL = "http://link.aip.org/link/?JCP/31/459/1",
1849 doi = "10.1063/1.1730376",
1852 @Article{horsfield96,
1853 title = "Bond-order potentials: Theory and implementation",
1854 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1855 D. G. Pettifor and M. Aoki",
1856 journal = "Phys. Rev. B",
1859 pages = "12694--12712",
1863 doi = "10.1103/PhysRevB.53.12694",
1864 publisher = "American Physical Society",
1868 title = "Empirical chemical pseudopotential theory of molecular
1869 and metallic bonding",
1870 author = "G. C. Abell",
1871 journal = "Phys. Rev. B",
1874 pages = "6184--6196",
1878 doi = "10.1103/PhysRevB.31.6184",
1879 publisher = "American Physical Society",
1882 @Article{tersoff_si1,
1883 title = "New empirical model for the structural properties of
1885 author = "J. Tersoff",
1886 journal = "Phys. Rev. Lett.",
1893 doi = "10.1103/PhysRevLett.56.632",
1894 publisher = "American Physical Society",
1898 title = "Development of a many-body Tersoff-type potential for
1900 author = "Brian W. Dodson",
1901 journal = "Phys. Rev. B",
1904 pages = "2795--2798",
1908 doi = "10.1103/PhysRevB.35.2795",
1909 publisher = "American Physical Society",
1912 @Article{tersoff_si2,
1913 title = "New empirical approach for the structure and energy of
1915 author = "J. Tersoff",
1916 journal = "Phys. Rev. B",
1919 pages = "6991--7000",
1923 doi = "10.1103/PhysRevB.37.6991",
1924 publisher = "American Physical Society",
1927 @Article{tersoff_si3,
1928 title = "Empirical interatomic potential for silicon with
1929 improved elastic properties",
1930 author = "J. Tersoff",
1931 journal = "Phys. Rev. B",
1934 pages = "9902--9905",
1938 doi = "10.1103/PhysRevB.38.9902",
1939 publisher = "American Physical Society",
1943 title = "Empirical Interatomic Potential for Carbon, with
1944 Applications to Amorphous Carbon",
1945 author = "J. Tersoff",
1946 journal = "Phys. Rev. Lett.",
1949 pages = "2879--2882",
1953 doi = "10.1103/PhysRevLett.61.2879",
1954 publisher = "American Physical Society",
1958 title = "Modeling solid-state chemistry: Interatomic potentials
1959 for multicomponent systems",
1960 author = "J. Tersoff",
1961 journal = "Phys. Rev. B",
1964 pages = "5566--5568",
1968 doi = "10.1103/PhysRevB.39.5566",
1969 publisher = "American Physical Society",
1973 title = "Carbon defects and defect reactions in silicon",
1974 author = "J. Tersoff",
1975 journal = "Phys. Rev. Lett.",
1978 pages = "1757--1760",
1982 doi = "10.1103/PhysRevLett.64.1757",
1983 publisher = "American Physical Society",
1987 title = "Point defects and dopant diffusion in silicon",
1988 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1989 journal = "Rev. Mod. Phys.",
1996 doi = "10.1103/RevModPhys.61.289",
1997 publisher = "American Physical Society",
2001 title = "Silicon carbide: synthesis and processing",
2002 journal = "Nucl. Instrum. Methods Phys. Res. B",
2007 note = "Radiation Effects in Insulators",
2009 doi = "DOI: 10.1016/0168-583X(96)00065-1",
2010 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
2011 author = "W. Wesch",
2015 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
2016 Palmour and J. A. Edmond",
2017 journal = "Proc. IEEE",
2018 title = "Thin film deposition and microelectronic and
2019 optoelectronic device fabrication and characterization
2020 in monocrystalline alpha and beta silicon carbide",
2026 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2027 diode;SiC;dry etching;electrical
2028 contacts;etching;impurity incorporation;optoelectronic
2029 device fabrication;solid-state devices;surface
2030 chemistry;Schottky effect;Schottky gate field effect
2031 transistors;Schottky-barrier
2032 diodes;etching;heterojunction bipolar
2033 transistors;insulated gate field effect
2034 transistors;light emitting diodes;semiconductor
2035 materials;semiconductor thin films;silicon compounds;",
2036 doi = "10.1109/5.90132",
2038 notes = "sic growth methods",
2042 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2043 Lin and B. Sverdlov and M. Burns",
2045 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2046 ZnSe-based semiconductor device technologies",
2049 journal = "J. Appl. Phys.",
2052 pages = "1363--1398",
2053 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2054 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2055 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2057 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2058 doi = "10.1063/1.358463",
2059 notes = "sic intro, properties",
2063 author = "Noch Unbekannt",
2064 title = "How to find references",
2065 journal = "Journal of Applied References",
2072 title = "Atomistic simulation of thermomechanical properties of
2074 author = "Meijie Tang and Sidney Yip",
2075 journal = "Phys. Rev. B",
2078 pages = "15150--15159",
2081 doi = "10.1103/PhysRevB.52.15150",
2082 notes = "modified tersoff, scale cutoff with volume, promising
2083 tersoff reparametrization",
2084 publisher = "American Physical Society",
2088 title = "Silicon carbide as a new {MEMS} technology",
2089 journal = "Seonsor. Actuator. A",
2095 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2096 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2097 author = "Pasqualina M. Sarro",
2099 keywords = "Silicon carbide",
2100 keywords = "Micromachining",
2101 keywords = "Mechanical stress",
2105 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2106 semiconductor for high-temperature applications: {A}
2108 journal = "Solid-State Electron.",
2111 pages = "1409--1422",
2114 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2115 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2116 author = "J. B. Casady and R. W. Johnson",
2117 notes = "sic intro",
2120 @Article{giancarli98,
2121 title = "Design requirements for Si{C}/Si{C} composites
2122 structural material in fusion power reactor blankets",
2123 journal = "Fusion Eng. Des.",
2129 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2130 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2131 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2132 Marois and N. B. Morley and J. F. Salavy",
2136 title = "Electrical and optical characterization of Si{C}",
2137 journal = "Physica B",
2143 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2144 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2145 author = "G. Pensl and W. J. Choyke",
2149 title = "Investigation of growth processes of ingots of silicon
2150 carbide single crystals",
2151 journal = "J. Cryst. Growth",
2156 notes = "modified lely process",
2158 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2159 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2160 author = "Yu. M. Tairov and V. F. Tsvetkov",
2164 title = "General principles of growing large-size single
2165 crystals of various silicon carbide polytypes",
2166 journal = "J. Cryst. Growth",
2173 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2174 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2175 author = "Yu.M. Tairov and V. F. Tsvetkov",
2179 title = "Si{C} boule growth by sublimation vapor transport",
2180 journal = "J. Cryst. Growth",
2187 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2188 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2189 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2190 R. H. Hopkins and W. J. Choyke",
2194 title = "Growth of large Si{C} single crystals",
2195 journal = "J. Cryst. Growth",
2202 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2203 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2204 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2205 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2210 title = "Control of polytype formation by surface energy
2211 effects during the growth of Si{C} monocrystals by the
2212 sublimation method",
2213 journal = "J. Cryst. Growth",
2220 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2221 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2222 author = "R. A. Stein and P. Lanig",
2223 notes = "6h and 4h, sublimation technique",
2227 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2230 title = "Production of large-area single-crystal wafers of
2231 cubic Si{C} for semiconductor devices",
2234 journal = "Appl. Phys. Lett.",
2238 keywords = "silicon carbides; layers; chemical vapor deposition;
2240 URL = "http://link.aip.org/link/?APL/42/460/1",
2241 doi = "10.1063/1.93970",
2242 notes = "cvd of 3c-sic on si, sic buffer layer",
2246 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2247 and Hiroyuki Matsunami",
2249 title = "Epitaxial growth and electric characteristics of cubic
2253 journal = "J. Appl. Phys.",
2256 pages = "4889--4893",
2257 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2258 doi = "10.1063/1.338355",
2259 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2264 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2266 title = "Growth and Characterization of Cubic Si{C}
2267 Single-Crystal Films on Si",
2270 journal = "J. Electrochem. Soc.",
2273 pages = "1558--1565",
2274 keywords = "semiconductor materials; silicon compounds; carbon
2275 compounds; crystal morphology; electron mobility",
2276 URL = "http://link.aip.org/link/?JES/134/1558/1",
2277 doi = "10.1149/1.2100708",
2278 notes = "blue light emitting diodes (led)",
2281 @Article{powell87_2,
2282 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2283 C. M. Chorey and T. T. Cheng and P. Pirouz",
2285 title = "Improved beta-Si{C} heteroepitaxial films using
2286 off-axis Si substrates",
2289 journal = "Appl. Phys. Lett.",
2293 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2294 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2295 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2296 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2297 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2298 URL = "http://link.aip.org/link/?APL/51/823/1",
2299 doi = "10.1063/1.98824",
2300 notes = "improved sic on off-axis si substrates, reduced apbs",
2304 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2305 journal = "J. Cryst. Growth",
2312 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2313 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2314 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2316 notes = "step-controlled epitaxy model",
2320 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2321 and Hiroyuki Matsunami",
2322 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2326 journal = "J. Appl. Phys.",
2330 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2331 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2333 URL = "http://link.aip.org/link/?JAP/73/726/1",
2334 doi = "10.1063/1.353329",
2335 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
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2339 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2340 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2341 Yoganathan and J. Yang and P. Pirouz",
2343 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2344 vicinal (0001) 6{H}-Si{C} wafers",
2347 journal = "Appl. Phys. Lett.",
2350 pages = "1442--1444",
2351 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
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2354 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2355 URL = "http://link.aip.org/link/?APL/56/1442/1",
2356 doi = "10.1063/1.102492",
2357 notes = "cvd of 6h-sic on 6h-sic",
2361 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2363 title = "Chemical vapor deposition and characterization of
2364 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2368 journal = "J. Appl. Phys.",
2371 pages = "2672--2679",
2372 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2373 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2374 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2375 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
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2378 doi = "10.1063/1.341608",
2382 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2383 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2384 Yoganathan and J. Yang and P. Pirouz",
2386 title = "Growth of improved quality 3{C}-Si{C} films on
2387 6{H}-Si{C} substrates",
2390 journal = "Appl. Phys. Lett.",
2393 pages = "1353--1355",
2394 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2395 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2396 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2398 URL = "http://link.aip.org/link/?APL/56/1353/1",
2399 doi = "10.1063/1.102512",
2400 notes = "cvd of 3c-sic on 6h-sic",
2404 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2405 Rozgonyi and K. L. More",
2407 title = "An examination of double positioning boundaries and
2408 interface misfit in beta-Si{C} films on alpha-Si{C}
2412 journal = "J. Appl. Phys.",
2415 pages = "2645--2650",
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2422 doi = "10.1063/1.341004",
2426 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2427 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2428 and W. J. Choyke and L. Clemen and M. Yoganathan",
2430 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2431 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2434 journal = "Appl. Phys. Lett.",
2438 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
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2441 URL = "http://link.aip.org/link/?APL/59/333/1",
2442 doi = "10.1063/1.105587",
2446 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2447 Thokala and M. J. Loboda",
2449 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2450 films on 6{H}-Si{C} by chemical vapor deposition from
2454 journal = "J. Appl. Phys.",
2457 pages = "1271--1273",
2458 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
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2461 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2462 doi = "10.1063/1.360368",
2463 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2467 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2468 properties of its p-n junction",
2469 journal = "J. Cryst. Growth",
2476 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2477 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2478 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2480 notes = "first time ssmbe of 3c-sic on 6h-sic",
2484 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2485 [alpha]-Si{C}(0001) at low temperatures by solid-source
2486 molecular beam epitaxy",
2487 journal = "J. Cryst. Growth",
2493 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2494 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2495 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2496 Schr{\"{o}}ter and W. Richter",
2497 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2500 @Article{fissel95_apl,
2501 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2503 title = "Low-temperature growth of Si{C} thin films on Si and
2504 6{H}--Si{C} by solid-source molecular beam epitaxy",
2507 journal = "Appl. Phys. Lett.",
2510 pages = "3182--3184",
2511 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2513 URL = "http://link.aip.org/link/?APL/66/3182/1",
2514 doi = "10.1063/1.113716",
2515 notes = "mbe 3c-sic on si and 6h-sic",
2519 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2520 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2522 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
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2524 level using surface superstructures",
2527 journal = "Appl. Phys. Lett.",
2530 pages = "1204--1206",
2531 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
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2535 doi = "10.1063/1.115969",
2536 notes = "ss mbe sic, superstructure, reconstruction",
2540 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2541 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2542 C. M. Bertoni and A. Catellani",
2543 journal = "Phys. Rev. Lett.",
2550 doi = "10.1103/PhysRevLett.91.136101",
2551 publisher = "American Physical Society",
2552 notes = "dft calculations mbe sic growth",
2556 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2558 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2562 journal = "Appl. Phys. Lett.",
2566 URL = "http://link.aip.org/link/?APL/18/509/1",
2567 doi = "10.1063/1.1653516",
2568 notes = "first time sic by ibs, follow cites for precipitation
2573 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2574 and E. V. Lubopytova",
2575 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2576 by ion implantation",
2577 publisher = "Taylor \& Francis",
2579 journal = "Radiat. Eff.",
2583 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2584 notes = "3c-sic for different temperatures, amorphous, poly,
2585 single crystalline",
2588 @Article{akimchenko80,
2589 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2590 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2591 title = "Structure and optical properties of silicon implanted
2592 by high doses of 70 and 310 ke{V} carbon ions",
2593 publisher = "Taylor \& Francis",
2595 journal = "Radiat. Eff.",
2599 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2600 notes = "3c-sic nucleation by thermal spikes",
2604 title = "Structure and annealing properties of silicon carbide
2605 thin layers formed by implantation of carbon ions in
2607 journal = "Thin Solid Films",
2614 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2615 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2616 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2621 title = "Characteristics of the synthesis of [beta]-Si{C} by
2622 the implantation of carbon ions into silicon",
2623 journal = "Thin Solid Films",
2630 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2631 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2632 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2637 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2638 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2639 Chater and J. A. Iulner and J. Davis",
2640 title = "Formation mechanisms and structures of insulating
2641 compounds formed in silicon by ion beam synthesis",
2642 publisher = "Taylor \& Francis",
2644 journal = "Radiat. Eff.",
2648 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2649 notes = "ibs, comparison with sio and sin, higher temp or time,
2650 no c redistribution",
2654 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2655 J. Davis and G. E. Celler",
2657 title = "Formation of buried layers of beta-Si{C} using ion
2658 beam synthesis and incoherent lamp annealing",
2661 journal = "Appl. Phys. Lett.",
2664 pages = "2242--2244",
2665 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2666 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2667 URL = "http://link.aip.org/link/?APL/51/2242/1",
2668 doi = "10.1063/1.98953",
2669 notes = "nice tem images, sic by ibs",
2673 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2674 and M. Olivier and A. M. Papon and G. Rolland",
2676 title = "High-temperature ion beam synthesis of cubic Si{C}",
2679 journal = "J. Appl. Phys.",
2682 pages = "2908--2912",
2683 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2684 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2685 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2686 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2687 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2688 REACTIONS; MONOCRYSTALS",
2689 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2690 doi = "10.1063/1.346092",
2691 notes = "triple energy implantation to overcome high annealing
2696 author = "R. I. Scace and G. A. Slack",
2698 title = "Solubility of Carbon in Silicon and Germanium",
2701 journal = "J. Chem. Phys.",
2704 pages = "1551--1555",
2705 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2706 doi = "10.1063/1.1730236",
2707 notes = "solubility of c in c-si, si-c phase diagram",
2711 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2713 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2714 Laboratories Eindhoven Netherlands Eindhoven
2716 title = "Boron implantations in silicon: {A} comparison of
2717 charge carrier and boron concentration profiles",
2718 journal = "Appl. Phys. A",
2719 publisher = "Springer Berlin / Heidelberg",
2721 keyword = "Physics and Astronomy",
2725 URL = "http://dx.doi.org/10.1007/BF00884267",
2726 note = "10.1007/BF00884267",
2728 notes = "first time ted (only for boron?)",
2732 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2735 title = "Rapid annealing and the anomalous diffusion of ion
2736 implanted boron into silicon",
2739 journal = "Appl. Phys. Lett.",
2743 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2744 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2745 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2746 URL = "http://link.aip.org/link/?APL/50/416/1",
2747 doi = "10.1063/1.98160",
2748 notes = "ted of boron in si",
2752 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2755 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2756 time, and matrix dependence of atomic and electrical
2760 journal = "J. Appl. Phys.",
2763 pages = "6191--6198",
2764 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2765 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2766 CRYSTALS; AMORPHIZATION",
2767 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2768 doi = "10.1063/1.346910",
2769 notes = "ted of boron in si",
2773 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2774 F. W. Saris and W. Vandervorst",
2776 title = "Role of {C} and {B} clusters in transient diffusion of
2780 journal = "Appl. Phys. Lett.",
2783 pages = "1150--1152",
2784 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2785 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2787 URL = "http://link.aip.org/link/?APL/68/1150/1",
2788 doi = "10.1063/1.115706",
2789 notes = "suppression of transient enhanced diffusion (ted)",
2793 title = "Implantation and transient boron diffusion: the role
2794 of the silicon self-interstitial",
2795 journal = "Nucl. Instrum. Methods Phys. Res. B",
2800 note = "Selected Papers of the Tenth International Conference
2801 on Ion Implantation Technology (IIT '94)",
2803 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2804 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2805 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2810 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2811 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2812 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2815 title = "Physical mechanisms of transient enhanced dopant
2816 diffusion in ion-implanted silicon",
2819 journal = "J. Appl. Phys.",
2822 pages = "6031--6050",
2823 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2824 doi = "10.1063/1.364452",
2825 notes = "ted, transient enhanced diffusion, c silicon trap",
2829 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2831 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2832 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2835 journal = "Appl. Phys. Lett.",
2839 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2840 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2841 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2843 URL = "http://link.aip.org/link/?APL/64/324/1",
2844 doi = "10.1063/1.111195",
2845 notes = "beta sic nano crystals in si, mbe, annealing",
2849 author = "Richard A. Soref",
2851 title = "Optical band gap of the ternary semiconductor Si[sub 1
2852 - x - y]Ge[sub x]{C}[sub y]",
2855 journal = "J. Appl. Phys.",
2858 pages = "2470--2472",
2859 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2860 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2862 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2863 doi = "10.1063/1.349403",
2864 notes = "band gap of strained si by c",
2868 author = "E Kasper",
2869 title = "Superlattices of group {IV} elements, a new
2870 possibility to produce direct band gap material",
2871 journal = "Phys. Scr.",
2874 URL = "http://stacks.iop.org/1402-4896/T35/232",
2876 notes = "superlattices, convert indirect band gap into a
2881 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2884 title = "Growth and strain compensation effects in the ternary
2885 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2888 journal = "Appl. Phys. Lett.",
2891 pages = "3033--3035",
2892 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2893 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2894 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2895 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2897 URL = "http://link.aip.org/link/?APL/60/3033/1",
2898 doi = "10.1063/1.106774",
2902 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2905 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2909 journal = "J. Vac. Sci. Technol. B",
2912 pages = "1064--1068",
2913 location = "Ottawa (Canada)",
2914 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2915 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2916 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2917 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2918 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2919 doi = "10.1116/1.587008",
2920 notes = "substitutional c in si by mbe",
2923 @Article{powell93_2,
2924 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2925 of the ternary system",
2926 journal = "J. Cryst. Growth",
2933 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2934 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2935 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2940 author = "H. J. Osten",
2941 title = "Modification of Growth Modes in Lattice-Mismatched
2942 Epitaxial Systems: Si/Ge",
2943 journal = "phys. status solidi (a)",
2946 publisher = "WILEY-VCH Verlag",
2948 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2949 doi = "10.1002/pssa.2211450203",
2954 @Article{dietrich94,
2955 title = "Lattice distortion in a strain-compensated
2956 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2957 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2958 Methfessel and P. Zaumseil",
2959 journal = "Phys. Rev. B",
2962 pages = "17185--17190",
2966 doi = "10.1103/PhysRevB.49.17185",
2967 publisher = "American Physical Society",
2971 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2973 title = "Growth of an inverse tetragonal distorted SiGe layer
2974 on Si(001) by adding small amounts of carbon",
2977 journal = "Appl. Phys. Lett.",
2980 pages = "3440--3442",
2981 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2982 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2983 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2985 URL = "http://link.aip.org/link/?APL/64/3440/1",
2986 doi = "10.1063/1.111235",
2987 notes = "inversely strained / distorted heterostructure",
2991 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2992 LeGoues and J. C. Tsang and F. Cardone",
2994 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2995 molecular beam epitaxy",
2998 journal = "Appl. Phys. Lett.",
3002 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
3003 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
3004 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
3005 FILM GROWTH; MICROSTRUCTURE",
3006 URL = "http://link.aip.org/link/?APL/60/356/1",
3007 doi = "10.1063/1.106655",
3011 author = "H. J. Osten and J. Griesche and S. Scalese",
3013 title = "Substitutional carbon incorporation in epitaxial
3014 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
3015 molecular beam epitaxy",
3018 journal = "Appl. Phys. Lett.",
3022 keywords = "molecular beam epitaxial growth; semiconductor growth;
3023 wide band gap semiconductors; interstitials; silicon
3025 URL = "http://link.aip.org/link/?APL/74/836/1",
3026 doi = "10.1063/1.123384",
3027 notes = "substitutional c in si by mbe",
3031 author = "M. Born and R. Oppenheimer",
3032 title = "Zur Quantentheorie der Molekeln",
3033 journal = "Ann. Phys. (Leipzig)",
3036 publisher = "WILEY-VCH Verlag",
3038 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3039 doi = "10.1002/andp.19273892002",
3044 @Article{hohenberg64,
3045 title = "Inhomogeneous Electron Gas",
3046 author = "P. Hohenberg and W. Kohn",
3047 journal = "Phys. Rev.",
3050 pages = "B864--B871",
3054 doi = "10.1103/PhysRev.136.B864",
3055 publisher = "American Physical Society",
3056 notes = "density functional theory, dft",
3060 title = "The calculation of atomic fields",
3061 author = "L. H. Thomas",
3062 journal = "Proc. Cambridge Philos. Soc.",
3066 doi = "10.1017/S0305004100011683",
3071 author = "E. Fermi",
3072 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3080 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3081 Central Field. Part {I}. Theory and Methods",
3082 author = "D. R. Hartree",
3083 journal = "Proc. Cambridge Philos. Soc.",
3087 doi = "10.1017/S0305004100011919",
3091 title = "The Theory of Complex Spectra",
3092 author = "J. C. Slater",
3093 journal = "Phys. Rev.",
3096 pages = "1293--1322",
3100 doi = "10.1103/PhysRev.34.1293",
3101 publisher = "American Physical Society",
3105 title = "Self-Consistent Equations Including Exchange and
3106 Correlation Effects",
3107 author = "W. Kohn and L. J. Sham",
3108 journal = "Phys. Rev.",
3111 pages = "A1133--A1138",
3115 doi = "10.1103/PhysRev.140.A1133",
3116 publisher = "American Physical Society",
3117 notes = "dft, exchange and correlation",
3121 title = "Density Functional and Density Matrix Method Scaling
3122 Linearly with the Number of Atoms",
3124 journal = "Phys. Rev. Lett.",
3127 pages = "3168--3171",
3131 doi = "10.1103/PhysRevLett.76.3168",
3132 publisher = "American Physical Society",
3136 title = "Edge Electron Gas",
3137 author = "Walter Kohn and Ann E. Mattsson",
3138 journal = "Phys. Rev. Lett.",
3141 pages = "3487--3490",
3145 doi = "10.1103/PhysRevLett.81.3487",
3146 publisher = "American Physical Society",
3150 title = "Nobel Lecture: Electronic structure of matter---wave
3151 functions and density functionals",
3153 journal = "Rev. Mod. Phys.",
3156 pages = "1253--1266",
3160 doi = "10.1103/RevModPhys.71.1253",
3161 publisher = "American Physical Society",
3165 title = "Iterative minimization techniques for ab initio
3166 total-energy calculations: molecular dynamics and
3167 conjugate gradients",
3168 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3169 Arias and J. D. Joannopoulos",
3170 journal = "Rev. Mod. Phys.",
3173 pages = "1045--1097",
3177 doi = "10.1103/RevModPhys.64.1045",
3178 publisher = "American Physical Society",
3182 title = "Electron densities in search of Hamiltonians",
3183 author = "Mel Levy",
3184 journal = "Phys. Rev. A",
3187 pages = "1200--1208",
3191 doi = "10.1103/PhysRevA.26.1200",
3192 publisher = "American Physical Society",
3196 title = "Strain-stabilized highly concentrated pseudomorphic
3197 $Si1-x$$Cx$ layers in Si",
3198 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3200 journal = "Phys. Rev. Lett.",
3203 pages = "3578--3581",
3207 doi = "10.1103/PhysRevLett.72.3578",
3208 publisher = "American Physical Society",
3209 notes = "high c concentration in si, heterostructure, strained
3214 title = "Phosphorous Doping of Strain-Induced
3215 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3216 by Low-Temperature Chemical Vapor Deposition",
3217 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3218 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3219 journal = "Japanese J. Appl. Phys.",
3221 number = "Part 1, No. 4B",
3222 pages = "2472--2475",
3225 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3226 doi = "10.1143/JJAP.41.2472",
3227 publisher = "The Japan Society of Applied Physics",
3228 notes = "experimental charge carrier mobility in strained si",
3232 title = "Electron Transport Model for Strained Silicon-Carbon
3234 author = "Shu-Tong Chang and Chung-Yi Lin",
3235 journal = "Japanese J. Appl. Phys.",
3238 pages = "2257--2262",
3241 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3242 doi = "10.1143/JJAP.44.2257",
3243 publisher = "The Japan Society of Applied Physics",
3244 notes = "enhance of electron mobility in strained si",
3247 @Article{kissinger94,
3248 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3251 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3252 y] layers on Si(001)",
3255 journal = "Appl. Phys. Lett.",
3258 pages = "3356--3358",
3259 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3260 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3261 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3262 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3263 URL = "http://link.aip.org/link/?APL/65/3356/1",
3264 doi = "10.1063/1.112390",
3265 notes = "strained si influence on optical properties",
3269 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3272 title = "Substitutional versus interstitial carbon
3273 incorporation during pseudomorphic growth of Si[sub 1 -
3274 y]{C}[sub y] on Si(001)",
3277 journal = "J. Appl. Phys.",
3280 pages = "6711--6715",
3281 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3282 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3284 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3285 doi = "10.1063/1.363797",
3286 notes = "mbe substitutional vs interstitial c incorporation",
3290 author = "H. J. Osten and P. Gaworzewski",
3292 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3293 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3297 journal = "J. Appl. Phys.",
3300 pages = "4977--4981",
3301 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3302 semiconductors; semiconductor epitaxial layers; carrier
3303 density; Hall mobility; interstitials; defect states",
3304 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3305 doi = "10.1063/1.366364",
3306 notes = "charge transport in strained si",
3310 title = "Carbon-mediated aggregation of self-interstitials in
3311 silicon: {A} large-scale molecular dynamics study",
3312 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3313 journal = "Phys. Rev. B",
3320 doi = "10.1103/PhysRevB.69.155214",
3321 publisher = "American Physical Society",
3322 notes = "simulation using promising tersoff reparametrization",
3326 title = "Event-Based Relaxation of Continuous Disordered
3328 author = "G. T. Barkema and Normand Mousseau",
3329 journal = "Phys. Rev. Lett.",
3332 pages = "4358--4361",
3336 doi = "10.1103/PhysRevLett.77.4358",
3337 publisher = "American Physical Society",
3338 notes = "activation relaxation technique, art, speed up slow
3343 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3344 Minoukadeh and F. Willaime",
3346 title = "Some improvements of the activation-relaxation
3347 technique method for finding transition pathways on
3348 potential energy surfaces",
3351 journal = "J. Chem. Phys.",
3357 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3358 surfaces; vacancies (crystal)",
3359 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3360 doi = "10.1063/1.3088532",
3361 notes = "improvements to art, refs for methods to find
3362 transition pathways",
3365 @Article{parrinello81,
3366 author = "M. Parrinello and A. Rahman",
3368 title = "Polymorphic transitions in single crystals: {A} new
3369 molecular dynamics method",
3372 journal = "J. Appl. Phys.",
3375 pages = "7182--7190",
3376 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3377 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3378 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3379 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3380 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3382 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3383 doi = "10.1063/1.328693",
3386 @Article{stillinger85,
3387 title = "Computer simulation of local order in condensed phases
3389 author = "Frank H. Stillinger and Thomas A. Weber",
3390 journal = "Phys. Rev. B",
3393 pages = "5262--5271",
3397 doi = "10.1103/PhysRevB.31.5262",
3398 publisher = "American Physical Society",
3402 title = "Empirical potential for hydrocarbons for use in
3403 simulating the chemical vapor deposition of diamond
3405 author = "Donald W. Brenner",
3406 journal = "Phys. Rev. B",
3409 pages = "9458--9471",
3413 doi = "10.1103/PhysRevB.42.9458",
3414 publisher = "American Physical Society",
3415 notes = "brenner hydro carbons",
3419 title = "Modeling of Covalent Bonding in Solids by Inversion of
3420 Cohesive Energy Curves",
3421 author = "Martin Z. Bazant and Efthimios Kaxiras",
3422 journal = "Phys. Rev. Lett.",
3425 pages = "4370--4373",
3429 doi = "10.1103/PhysRevLett.77.4370",
3430 publisher = "American Physical Society",
3431 notes = "first si edip",
3435 title = "Environment-dependent interatomic potential for bulk
3437 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3439 journal = "Phys. Rev. B",
3442 pages = "8542--8552",
3446 doi = "10.1103/PhysRevB.56.8542",
3447 publisher = "American Physical Society",
3448 notes = "second si edip",
3452 title = "Interatomic potential for silicon defects and
3454 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3455 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3456 journal = "Phys. Rev. B",
3459 pages = "2539--2550",
3463 doi = "10.1103/PhysRevB.58.2539",
3464 publisher = "American Physical Society",
3465 notes = "latest si edip, good dislocation explanation",
3469 journal = "{PARCAS} molecular dynamics code",
3470 author = "K. Nordlund",
3475 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3477 author = "Arthur F. Voter",
3478 journal = "Phys. Rev. Lett.",
3481 pages = "3908--3911",
3485 doi = "10.1103/PhysRevLett.78.3908",
3486 publisher = "American Physical Society",
3487 notes = "hyperdynamics, accelerated md",
3491 author = "Arthur F. Voter",
3493 title = "A method for accelerating the molecular dynamics
3494 simulation of infrequent events",
3497 journal = "J. Chem. Phys.",
3500 pages = "4665--4677",
3501 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3502 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3503 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3504 energy functions; surface diffusion; reaction kinetics
3505 theory; potential energy surfaces",
3506 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3507 doi = "10.1063/1.473503",
3508 notes = "improved hyperdynamics md",
3511 @Article{sorensen2000,
3512 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3514 title = "Temperature-accelerated dynamics for simulation of
3518 journal = "J. Chem. Phys.",
3521 pages = "9599--9606",
3522 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3523 MOLECULAR DYNAMICS METHOD; surface diffusion",
3524 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3525 doi = "10.1063/1.481576",
3526 notes = "temperature accelerated dynamics, tad",
3530 title = "Parallel replica method for dynamics of infrequent
3532 author = "Arthur F. Voter",
3533 journal = "Phys. Rev. B",
3536 pages = "R13985--R13988",
3540 doi = "10.1103/PhysRevB.57.R13985",
3541 publisher = "American Physical Society",
3542 notes = "parallel replica method, accelerated md",
3546 author = "Xiongwu Wu and Shaomeng Wang",
3548 title = "Enhancing systematic motion in molecular dynamics
3552 journal = "J. Chem. Phys.",
3555 pages = "9401--9410",
3556 keywords = "molecular dynamics method; argon; Lennard-Jones
3557 potential; crystallisation; liquid theory",
3558 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3559 doi = "10.1063/1.478948",
3560 notes = "self guided md, sgmd, accelerated md, enhancing
3564 @Article{choudhary05,
3565 author = "Devashish Choudhary and Paulette Clancy",
3567 title = "Application of accelerated molecular dynamics schemes
3568 to the production of amorphous silicon",
3571 journal = "J. Chem. Phys.",
3577 keywords = "molecular dynamics method; silicon; glass structure;
3578 amorphous semiconductors",
3579 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3580 doi = "10.1063/1.1878733",
3581 notes = "explanation of sgmd and hyper md, applied to amorphous
3586 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3588 title = "Carbon precipitation in silicon: Why is it so
3592 journal = "Appl. Phys. Lett.",
3595 pages = "3336--3338",
3596 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3597 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3599 URL = "http://link.aip.org/link/?APL/62/3336/1",
3600 doi = "10.1063/1.109063",
3601 notes = "interfacial energy of cubic sic and si, si self
3602 interstitials necessary for precipitation, volume
3603 decrease, high interface energy",
3606 @Article{chaussende08,
3607 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3608 journal = "J. Cryst. Growth",
3613 note = "Proceedings of the E-MRS Conference, Symposium G -
3614 Substrates of Wide Bandgap Materials",
3616 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3617 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3618 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3619 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3620 and A. Andreadou and E. K. Polychroniadis and C.
3621 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3622 notes = "3c-sic crystal growth, sic fabrication + links,
3626 @Article{chaussende07,
3627 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3628 title = "Status of Si{C} bulk growth processes",
3629 journal = "J. Phys. D",
3633 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3635 notes = "review of sic single crystal growth methods, process
3640 title = "Forces in Molecules",
3641 author = "R. P. Feynman",
3642 journal = "Phys. Rev.",
3649 doi = "10.1103/PhysRev.56.340",
3650 publisher = "American Physical Society",
3651 notes = "hellmann feynman forces",
3655 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3656 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3657 their Contrasting Properties",
3658 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3660 journal = "Phys. Rev. Lett.",
3667 doi = "10.1103/PhysRevLett.84.943",
3668 publisher = "American Physical Society",
3669 notes = "si sio2 and sic sio2 interface",
3672 @Article{djurabekova08,
3673 title = "Atomistic simulation of the interface structure of Si
3674 nanocrystals embedded in amorphous silica",
3675 author = "Flyura Djurabekova and Kai Nordlund",
3676 journal = "Phys. Rev. B",
3683 doi = "10.1103/PhysRevB.77.115325",
3684 publisher = "American Physical Society",
3685 notes = "nc-si in sio2, interface energy, nc construction,
3686 angular distribution, coordination",
3690 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3691 W. Liang and J. Zou",
3693 title = "Nature of interfacial defects and their roles in
3694 strain relaxation at highly lattice mismatched
3695 3{C}-Si{C}/Si (001) interface",
3698 journal = "J. Appl. Phys.",
3704 keywords = "anelastic relaxation; crystal structure; dislocations;
3705 elemental semiconductors; semiconductor growth;
3706 semiconductor thin films; silicon; silicon compounds;
3707 stacking faults; wide band gap semiconductors",
3708 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3709 doi = "10.1063/1.3234380",
3710 notes = "sic/si interface, follow refs, tem image
3711 deconvolution, dislocation defects",
3714 @Article{kitabatake93,
3715 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3718 title = "Simulations and experiments of Si{C} heteroepitaxial
3719 growth on Si(001) surface",
3722 journal = "J. Appl. Phys.",
3725 pages = "4438--4445",
3726 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3727 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3728 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3729 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3730 doi = "10.1063/1.354385",
3731 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3735 @Article{kitabatake97,
3736 author = "Makoto Kitabatake",
3737 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3738 Heteroepitaxial Growth",
3739 publisher = "WILEY-VCH Verlag",
3741 journal = "phys. status solidi (b)",
3744 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3745 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3746 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3750 title = "Strain relaxation and thermal stability of the
3751 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3753 journal = "Thin Solid Films",
3760 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3761 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3762 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3763 keywords = "Strain relaxation",
3764 keywords = "Interfaces",
3765 keywords = "Thermal stability",
3766 keywords = "Molecular dynamics",
3767 notes = "tersoff sic/si interface study",
3771 title = "Ab initio Study of Misfit Dislocations at the
3772 $Si{C}/Si(001)$ Interface",
3773 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3775 journal = "Phys. Rev. Lett.",
3782 doi = "10.1103/PhysRevLett.89.156101",
3783 publisher = "American Physical Society",
3784 notes = "sic/si interface study",
3787 @Article{pizzagalli03,
3788 title = "Theoretical investigations of a highly mismatched
3789 interface: Si{C}/Si(001)",
3790 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3792 journal = "Phys. Rev. B",
3799 doi = "10.1103/PhysRevB.68.195302",
3800 publisher = "American Physical Society",
3801 notes = "tersoff md and ab initio sic/si interface study",
3805 title = "Atomic configurations of dislocation core and twin
3806 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3807 electron microscopy",
3808 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3809 H. Zheng and J. W. Liang",
3810 journal = "Phys. Rev. B",
3817 doi = "10.1103/PhysRevB.75.184103",
3818 publisher = "American Physical Society",
3819 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3823 @Article{hornstra58,
3824 title = "Dislocations in the diamond lattice",
3825 journal = "J. Phys. Chem. Solids",
3832 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3833 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3834 author = "J. Hornstra",
3835 notes = "dislocations in diamond lattice",
3839 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3840 Ion `Hot' Implantation",
3841 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3842 Hirao and Naoki Arai and Tomio Izumi",
3843 journal = "Japanese J. Appl. Phys.",
3845 number = "Part 1, No. 2A",
3849 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3850 doi = "10.1143/JJAP.31.343",
3851 publisher = "The Japan Society of Applied Physics",
3852 notes = "c-c bonds in c implanted si, hot implantation
3853 efficiency, c-c hard to break by thermal annealing",
3856 @Article{eichhorn99,
3857 author = "F. Eichhorn and N. Schell and W. Matz and R.
3860 title = "Strain and Si{C} particle formation in silicon
3861 implanted with carbon ions of medium fluence studied by
3862 synchrotron x-ray diffraction",
3865 journal = "J. Appl. Phys.",
3868 pages = "4184--4187",
3869 keywords = "silicon; carbon; elemental semiconductors; chemical
3870 interdiffusion; ion implantation; X-ray diffraction;
3871 precipitation; semiconductor doping",
3872 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3873 doi = "10.1063/1.371344",
3874 notes = "sic conversion by ibs, detected substitutional carbon,
3875 expansion of si lattice",
3878 @Article{eichhorn02,
3879 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3880 Metzger and W. Matz and R. K{\"{o}}gler",
3882 title = "Structural relation between Si and Si{C} formed by
3883 carbon ion implantation",
3886 journal = "J. Appl. Phys.",
3889 pages = "1287--1292",
3890 keywords = "silicon compounds; wide band gap semiconductors; ion
3891 implantation; annealing; X-ray scattering; transmission
3892 electron microscopy",
3893 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3894 doi = "10.1063/1.1428105",
3895 notes = "3c-sic alignement to si host in ibs depending on
3896 temperature, might explain c into c sub trafo",
3900 author = "G Lucas and M Bertolus and L Pizzagalli",
3901 title = "An environment-dependent interatomic potential for
3902 silicon carbide: calculation of bulk properties,
3903 high-pressure phases, point and extended defects, and
3904 amorphous structures",
3905 journal = "J. Phys.: Condens. Matter",
3909 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3915 author = "J Godet and L Pizzagalli and S Brochard and P
3917 title = "Comparison between classical potentials and ab initio
3918 methods for silicon under large shear",
3919 journal = "J. Phys.: Condens. Matter",
3923 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3925 notes = "comparison of empirical potentials, stillinger weber,
3926 edip, tersoff, ab initio",
3929 @Article{moriguchi98,
3930 title = "Verification of Tersoff's Potential for Static
3931 Structural Analysis of Solids of Group-{IV} Elements",
3932 author = "Koji Moriguchi and Akira Shintani",
3933 journal = "Japanese J. Appl. Phys.",
3935 number = "Part 1, No. 2",
3939 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3940 doi = "10.1143/JJAP.37.414",
3941 publisher = "The Japan Society of Applied Physics",
3942 notes = "tersoff stringent test",
3945 @Article{mazzarolo01,
3946 title = "Low-energy recoils in crystalline silicon: Quantum
3948 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3949 Lulli and Eros Albertazzi",
3950 journal = "Phys. Rev. B",
3957 doi = "10.1103/PhysRevB.63.195207",
3958 publisher = "American Physical Society",
3961 @Article{holmstroem08,
3962 title = "Threshold defect production in silicon determined by
3963 density functional theory molecular dynamics
3965 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3966 journal = "Phys. Rev. B",
3973 doi = "10.1103/PhysRevB.78.045202",
3974 publisher = "American Physical Society",
3975 notes = "threshold displacement comparison empirical and ab
3979 @Article{nordlund97,
3980 title = "Repulsive interatomic potentials calculated using
3981 Hartree-Fock and density-functional theory methods",
3982 journal = "Nucl. Instrum. Methods Phys. Res. B",
3989 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3990 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3991 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3992 notes = "repulsive ab initio potential",
3996 title = "Efficiency of ab-initio total energy calculations for
3997 metals and semiconductors using a plane-wave basis
3999 journal = "Comput. Mater. Sci.",
4006 doi = "DOI: 10.1016/0927-0256(96)00008-0",
4007 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
4008 author = "G. Kresse and J. Furthm{\"{u}}ller",
4013 title = "Projector augmented-wave method",
4014 author = "P. E. Bl{\"o}chl",
4015 journal = "Phys. Rev. B",
4018 pages = "17953--17979",
4022 doi = "10.1103/PhysRevB.50.17953",
4023 publisher = "American Physical Society",
4024 notes = "paw method",
4027 @InCollection{cohen70,
4028 title = "The Fitting of Pseudopotentials to Experimental Data
4029 and Their Subsequent Application",
4030 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4031 publisher = "Academic Press",
4035 series = "Solid State Physics",
4037 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4038 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4039 author = "Marvin L. Cohen and Volker Heine",
4043 title = "Norm-Conserving Pseudopotentials",
4044 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4045 journal = "Phys. Rev. Lett.",
4048 pages = "1494--1497",
4052 doi = "10.1103/PhysRevLett.43.1494",
4053 publisher = "American Physical Society",
4054 notes = "norm-conserving pseudopotentials",
4057 @Article{troullier91,
4058 title = "Efficient pseudopotentials for plane-wave
4060 author = "N. Troullier and Jos\'e Luriaas Martins",
4061 journal = "Phys. Rev. B",
4064 pages = "1993--2006",
4068 doi = "10.1103/PhysRevB.43.1993",
4069 publisher = "American Physical Society",
4072 @Article{vanderbilt90,
4073 title = "Soft self-consistent pseudopotentials in a generalized
4074 eigenvalue formalism",
4075 author = "David Vanderbilt",
4076 journal = "Phys. Rev. B",
4079 pages = "7892--7895",
4083 doi = "10.1103/PhysRevB.41.7892",
4084 publisher = "American Physical Society",
4085 notes = "vasp pseudopotentials",
4088 @Article{ceperley80,
4089 title = "Ground State of the Electron Gas by a Stochastic
4091 author = "D. M. Ceperley and B. J. Alder",
4092 journal = "Phys. Rev. Lett.",
4099 doi = "10.1103/PhysRevLett.45.566",
4100 publisher = "American Physical Society",
4104 title = "Self-interaction correction to density-functional
4105 approximations for many-electron systems",
4106 author = "J. P. Perdew and Alex Zunger",
4107 journal = "Phys. Rev. B",
4110 pages = "5048--5079",
4114 doi = "10.1103/PhysRevB.23.5048",
4115 publisher = "American Physical Society",
4119 title = "Accurate and simple density functional for the
4120 electronic exchange energy: Generalized gradient
4122 author = "John P. Perdew and Yue Wang",
4123 journal = "Phys. Rev. B",
4126 pages = "8800--8802",
4130 doi = "10.1103/PhysRevB.33.8800",
4131 publisher = "American Physical Society",
4132 notes = "rapid communication gga",
4136 title = "Generalized gradient approximations for exchange and
4137 correlation: {A} look backward and forward",
4138 journal = "Physica B",
4145 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4146 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4147 author = "John P. Perdew",
4148 notes = "gga overview",
4152 title = "Atoms, molecules, solids, and surfaces: Applications
4153 of the generalized gradient approximation for exchange
4155 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4156 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4157 and Carlos Fiolhais",
4158 journal = "Phys. Rev. B",
4161 pages = "6671--6687",
4165 doi = "10.1103/PhysRevB.46.6671",
4166 publisher = "American Physical Society",
4167 notes = "gga pw91 (as in vasp)",
4171 title = "Special Points in the Brillouin Zone",
4172 author = "D. J. Chadi and Marvin L. Cohen",
4173 journal = "Phys. Rev. B",
4176 pages = "5747--5753",
4180 doi = "10.1103/PhysRevB.8.5747",
4181 publisher = "American Physical Society",
4184 @Article{baldereschi73,
4185 title = "Mean-Value Point in the Brillouin Zone",
4186 author = "A. Baldereschi",
4187 journal = "Phys. Rev. B",
4190 pages = "5212--5215",
4194 doi = "10.1103/PhysRevB.7.5212",
4195 publisher = "American Physical Society",
4196 notes = "mean value k point",
4199 @Article{monkhorst76,
4200 title = "Special points for Brillouin-zone integrations",
4201 author = "Hendrik J. Monkhorst and James D. Pack",
4202 journal = "Phys. Rev. B",
4205 pages = "5188--5192",
4209 doi = "10.1103/PhysRevB.13.5188",
4210 publisher = "American Physical Society",
4214 title = "Ab initio pseudopotential calculations of dopant
4216 journal = "Comput. Mater. Sci.",
4223 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4224 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4225 author = "Jing Zhu",
4226 keywords = "TED (transient enhanced diffusion)",
4227 keywords = "Boron dopant",
4228 keywords = "Carbon dopant",
4229 keywords = "Defect",
4230 keywords = "ab initio pseudopotential method",
4231 keywords = "Impurity cluster",
4232 notes = "binding of c to si interstitial, c in si defects",
4236 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4238 title = "Si{C} buried layer formation by ion beam synthesis at
4242 journal = "Appl. Phys. Lett.",
4245 pages = "2646--2648",
4246 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4247 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4248 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4249 ELECTRON MICROSCOPY",
4250 URL = "http://link.aip.org/link/?APL/66/2646/1",
4251 doi = "10.1063/1.113112",
4252 notes = "precipitation mechanism by substitutional carbon, si
4253 self interstitials react with further implanted c",
4257 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4258 Kolodzey and A. Hairie",
4260 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4264 journal = "J. Appl. Phys.",
4267 pages = "4631--4633",
4268 keywords = "silicon compounds; precipitation; localised modes;
4269 semiconductor epitaxial layers; infrared spectra;
4270 Fourier transform spectra; thermal stability;
4272 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4273 doi = "10.1063/1.368703",
4274 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4278 author = "R Jones and B J Coomer and P R Briddon",
4279 title = "Quantum mechanical modelling of defects in
4281 journal = "J. Phys.: Condens. Matter",
4285 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4287 notes = "ab inito dft intro, vibrational modes, c defect in
4292 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4293 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4294 J. E. Greene and S. G. Bishop",
4296 title = "Carbon incorporation pathways and lattice sites in
4297 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4298 molecular-beam epitaxy",
4301 journal = "J. Appl. Phys.",
4304 pages = "5716--5727",
4305 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4306 doi = "10.1063/1.1465122",
4307 notes = "c substitutional incorporation pathway, dft and expt",
4311 title = "Dynamic properties of interstitial carbon and
4312 carbon-carbon pair defects in silicon",
4313 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4315 journal = "Phys. Rev. B",
4318 pages = "2188--2194",
4322 doi = "10.1103/PhysRevB.55.2188",
4323 publisher = "American Physical Society",
4324 notes = "ab initio c in si and di-carbon defect, no formation
4325 energies, different migration barriers and paths",
4329 title = "Interstitial carbon and the carbon-carbon pair in
4330 silicon: Semiempirical electronic-structure
4332 author = "Matthew J. Burnard and Gary G. DeLeo",
4333 journal = "Phys. Rev. B",
4336 pages = "10217--10225",
4340 doi = "10.1103/PhysRevB.47.10217",
4341 publisher = "American Physical Society",
4342 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4343 carbon defect, formation energies",
4347 title = "Electronic structure of interstitial carbon in
4349 author = "Morgan Besson and Gary G. DeLeo",
4350 journal = "Phys. Rev. B",
4353 pages = "4028--4033",
4357 doi = "10.1103/PhysRevB.43.4028",
4358 publisher = "American Physical Society",
4362 title = "Review of atomistic simulations of surface diffusion
4363 and growth on semiconductors",
4364 journal = "Comput. Mater. Sci.",
4369 note = "Proceedings of the Workshop on Virtual Molecular Beam
4372 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4373 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4374 author = "Efthimios Kaxiras",
4375 notes = "might contain c 100 db formation energy, overview md,
4376 tight binding, first principles",
4379 @Article{kaukonen98,
4380 title = "Effect of {N} and {B} doping on the growth of {CVD}
4382 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4384 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4385 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4387 journal = "Phys. Rev. B",
4390 pages = "9965--9970",
4394 doi = "10.1103/PhysRevB.57.9965",
4395 publisher = "American Physical Society",
4396 notes = "constrained conjugate gradient relaxation technique
4401 title = "Correlation between the antisite pair and the ${DI}$
4403 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4404 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4406 journal = "Phys. Rev. B",
4413 doi = "10.1103/PhysRevB.67.155203",
4414 publisher = "American Physical Society",
4418 title = "Production and recovery of defects in Si{C} after
4419 irradiation and deformation",
4420 journal = "J. Nucl. Mater.",
4423 pages = "1803--1808",
4427 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4428 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4429 author = "J. Chen and P. Jung and H. Klein",
4433 title = "Accumulation, dynamic annealing and thermal recovery
4434 of ion-beam-induced disorder in silicon carbide",
4435 journal = "Nucl. Instrum. Methods Phys. Res. B",
4442 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4443 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4444 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4447 @Article{bockstedte03,
4448 title = "Ab initio study of the migration of intrinsic defects
4450 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4452 journal = "Phys. Rev. B",
4459 doi = "10.1103/PhysRevB.68.205201",
4460 publisher = "American Physical Society",
4461 notes = "defect migration in sic",
4465 title = "Theoretical study of vacancy diffusion and
4466 vacancy-assisted clustering of antisites in Si{C}",
4467 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4469 journal = "Phys. Rev. B",
4476 doi = "10.1103/PhysRevB.68.155208",
4477 publisher = "American Physical Society",
4481 journal = "Telegrafiya i Telefoniya bez Provodov",
4485 author = "O. V. Lossev",
4489 title = "Luminous carborundum detector and detection effect and
4490 oscillations with crystals",
4491 journal = "Philos. Mag. Series 7",
4494 pages = "1024--1044",
4496 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4497 author = "O. V. Lossev",
4501 journal = "Physik. Zeitschr.",
4505 author = "O. V. Lossev",
4509 journal = "Physik. Zeitschr.",
4513 author = "O. V. Lossev",
4517 journal = "Physik. Zeitschr.",
4521 author = "O. V. Lossev",
4525 title = "A note on carborundum",
4526 journal = "Electrical World",
4530 author = "H. J. Round",
4533 @Article{vashishath08,
4534 title = "Recent trends in silicon carbide device research",
4535 journal = "Mj. Int. J. Sci. Tech.",
4540 author = "Munish Vashishath and Ashoke K. Chatterjee",
4541 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4542 notes = "sic polytype electronic properties",
4546 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4548 title = "Growth and Properties of beta-Si{C} Single Crystals",
4551 journal = "J. Appl. Phys.",
4555 URL = "http://link.aip.org/link/?JAP/37/333/1",
4556 doi = "10.1063/1.1707837",
4557 notes = "sic melt growth",
4561 author = "A. E. van Arkel and J. H. de Boer",
4562 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4564 publisher = "WILEY-VCH Verlag GmbH",
4566 journal = "Z. Anorg. Chem.",
4569 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4570 doi = "10.1002/zaac.19251480133",
4571 notes = "van arkel apparatus",
4575 author = "K. Moers",
4577 journal = "Z. Anorg. Chem.",
4580 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4585 author = "J. T. Kendall",
4586 title = "Electronic Conduction in Silicon Carbide",
4589 journal = "J. Chem. Phys.",
4593 URL = "http://link.aip.org/link/?JCP/21/821/1",
4594 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4599 author = "J. A. Lely",
4601 journal = "Ber. Deut. Keram. Ges.",
4604 notes = "lely sublimation growth process",
4607 @Article{knippenberg63,
4608 author = "W. F. Knippenberg",
4610 journal = "Philips Res. Repts.",
4613 notes = "acheson process",
4616 @Article{hoffmann82,
4617 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4620 title = "Silicon carbide blue light emitting diodes with
4621 improved external quantum efficiency",
4624 journal = "J. Appl. Phys.",
4627 pages = "6962--6967",
4628 keywords = "light emitting diodes; silicon carbides; quantum
4629 efficiency; visible radiation; experimental data;
4630 epitaxy; fabrication; medium temperature; layers;
4631 aluminium; nitrogen; substrates; pn junctions;
4632 electroluminescence; spectra; current density;
4634 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4635 doi = "10.1063/1.330041",
4636 notes = "blue led, sublimation process",
4640 author = "Philip Neudeck",
4641 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4642 Road 44135 Cleveland OH",
4643 title = "Progress in silicon carbide semiconductor electronics
4645 journal = "Journal of Electronic Materials",
4646 publisher = "Springer Boston",
4648 keyword = "Chemistry and Materials Science",
4652 URL = "http://dx.doi.org/10.1007/BF02659688",
4653 note = "10.1007/BF02659688",
4655 notes = "sic data, advantages of 3c sic",
4658 @Article{bhatnagar93,
4659 author = "M. Bhatnagar and B. J. Baliga",
4660 journal = "Electron Devices, IEEE Transactions on",
4661 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4668 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4669 rectifiers;Si;SiC;breakdown voltages;drift region
4670 properties;output characteristics;power MOSFETs;power
4671 semiconductor devices;switching characteristics;thermal
4672 analysis;Schottky-barrier diodes;electric breakdown of
4673 solids;insulated gate field effect transistors;power
4674 transistors;semiconductor materials;silicon;silicon
4675 compounds;solid-state rectifiers;thermal analysis;",
4676 doi = "10.1109/16.199372",
4678 notes = "comparison 3c 6h sic and si devices",
4682 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4683 A. Powell and C. S. Salupo and L. G. Matus",
4684 journal = "Electron Devices, IEEE Transactions on",
4685 title = "Electrical properties of epitaxial 3{C}- and
4686 6{H}-Si{C} p-n junction diodes produced side-by-side on
4687 6{H}-Si{C} substrates",
4693 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4694 C;6H-SiC layers;6H-SiC substrates;CVD
4695 process;SiC;chemical vapor deposition;doping;electrical
4696 properties;epitaxial layers;light
4697 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4698 diodes;polytype;rectification characteristics;reverse
4699 leakage current;reverse voltages;temperature;leakage
4700 currents;power electronics;semiconductor
4701 diodes;semiconductor epitaxial layers;semiconductor
4702 growth;semiconductor materials;silicon
4703 compounds;solid-state rectifiers;substrates;vapour
4704 phase epitaxial growth;",
4705 doi = "10.1109/16.285038",
4707 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4712 author = "N. Schulze and D. L. Barrett and G. Pensl",
4714 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4715 single crystals by physical vapor transport",
4718 journal = "Appl. Phys. Lett.",
4721 pages = "1632--1634",
4722 keywords = "silicon compounds; semiconductor materials;
4723 semiconductor growth; crystal growth from vapour;
4724 photoluminescence; Hall mobility",
4725 URL = "http://link.aip.org/link/?APL/72/1632/1",
4726 doi = "10.1063/1.121136",
4727 notes = "micropipe free 6h-sic pvt growth",
4731 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4733 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4736 journal = "Appl. Phys. Lett.",
4740 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4741 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4742 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4743 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4745 URL = "http://link.aip.org/link/?APL/50/221/1",
4746 doi = "10.1063/1.97667",
4747 notes = "apb 3c-sic heteroepitaxy on si",
4750 @Article{shibahara86,
4751 title = "Surface morphology of cubic Si{C}(100) grown on
4752 Si(100) by chemical vapor deposition",
4753 journal = "J. Cryst. Growth",
4760 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4761 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4762 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4764 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4767 @Article{desjardins96,
4768 author = "P. Desjardins and J. E. Greene",
4770 title = "Step-flow epitaxial growth on two-domain surfaces",
4773 journal = "J. Appl. Phys.",
4776 pages = "1423--1434",
4777 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4778 FILM GROWTH; SURFACE STRUCTURE",
4779 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4780 doi = "10.1063/1.360980",
4781 notes = "apb model",
4785 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4787 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4788 carbonization of silicon",
4791 journal = "J. Appl. Phys.",
4794 pages = "2070--2073",
4795 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4796 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4798 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4799 doi = "10.1063/1.360184",
4800 notes = "ssmbe of sic on si, lower temperatures",
4804 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4805 {MBE} using surface superstructure",
4806 journal = "J. Cryst. Growth",
4813 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4814 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4815 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4816 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4817 notes = "gas source mbe of 3c-sic on 6h-sic",
4820 @Article{yoshinobu92,
4821 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4822 and Takashi Fuyuki and Hiroyuki Matsunami",
4824 title = "Lattice-matched epitaxial growth of single crystalline
4825 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4826 molecular beam epitaxy",
4829 journal = "Appl. Phys. Lett.",
4833 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4834 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4835 INTERFACE STRUCTURE",
4836 URL = "http://link.aip.org/link/?APL/60/824/1",
4837 doi = "10.1063/1.107430",
4838 notes = "gas source mbe of 3c-sic on 6h-sic",
4841 @Article{yoshinobu90,
4842 title = "Atomic level control in gas source {MBE} growth of
4844 journal = "J. Cryst. Growth",
4851 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4852 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4853 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4854 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4855 notes = "gas source mbe of 3c-sic on 3c-sic",
4859 title = "Atomic layer epitaxy controlled by surface
4860 superstructures in Si{C}",
4861 journal = "Thin Solid Films",
4868 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4869 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4870 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4872 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4877 title = "Microscopic mechanisms of accurate layer-by-layer
4878 growth of [beta]-Si{C}",
4879 journal = "Thin Solid Films",
4886 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4887 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4888 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4889 and S. Misawa and E. Sakuma and S. Yoshida",
4890 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4895 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4897 title = "Effects of gas flow ratio on silicon carbide thin film
4898 growth mode and polytype formation during gas-source
4899 molecular beam epitaxy",
4902 journal = "Appl. Phys. Lett.",
4905 pages = "2851--2853",
4906 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4907 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4908 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4910 URL = "http://link.aip.org/link/?APL/65/2851/1",
4911 doi = "10.1063/1.112513",
4912 notes = "gas source mbe of 6h-sic on 6h-sic",
4916 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4917 title = "Heterointerface Control and Epitaxial Growth of
4918 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4919 publisher = "WILEY-VCH Verlag",
4921 journal = "phys. status solidi (b)",
4924 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4929 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4930 journal = "J. Cryst. Growth",
4937 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4938 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4939 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4940 keywords = "Reflection high-energy electron diffraction (RHEED)",
4941 keywords = "Scanning electron microscopy (SEM)",
4942 keywords = "Silicon carbide",
4943 keywords = "Silicon",
4944 keywords = "Island growth",
4945 notes = "lower temperature, 550-700",
4948 @Article{hatayama95,
4949 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4950 on Si using hydrocarbon radicals by gas source
4951 molecular beam epitaxy",
4952 journal = "J. Cryst. Growth",
4959 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4960 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4961 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4962 and Hiroyuki Matsunami",
4966 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4967 title = "The Preference of Silicon Carbide for Growth in the
4968 Metastable Cubic Form",
4969 journal = "J. Am. Ceram. Soc.",
4972 publisher = "Blackwell Publishing Ltd",
4974 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4975 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4976 pages = "2630--2633",
4977 keywords = "silicon carbide, crystal growth, crystal structure,
4978 calculations, stability",
4980 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4981 polytype dft calculation refs",
4984 @Article{allendorf91,
4985 title = "The adsorption of {H}-atoms on polycrystalline
4986 [beta]-silicon carbide",
4987 journal = "Surf. Sci.",
4994 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4995 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4996 author = "Mark D. Allendorf and Duane A. Outka",
4997 notes = "h adsorption on 3c-sic",
5000 @Article{eaglesham93,
5001 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
5002 D. P. Adams and S. M. Yalisove",
5004 title = "Effect of {H} on Si molecular-beam epitaxy",
5007 journal = "J. Appl. Phys.",
5010 pages = "6615--6618",
5011 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
5012 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
5013 DIFFUSION; ADSORPTION",
5014 URL = "http://link.aip.org/link/?JAP/74/6615/1",
5015 doi = "10.1063/1.355101",
5016 notes = "h incorporation on si surface, lower surface
5021 author = "Ronald C. Newman",
5022 title = "Carbon in Crystalline Silicon",
5023 journal = "MRS Proc.",
5028 doi = "10.1557/PROC-59-403",
5029 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5030 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5034 title = "The diffusivity of carbon in silicon",
5035 journal = "J. Phys. Chem. Solids",
5042 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5043 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5044 author = "R. C. Newman and J. Wakefield",
5045 notes = "diffusivity of substitutional c in si",
5049 author = "U. Gösele",
5050 title = "The Role of Carbon and Point Defects in Silicon",
5051 journal = "MRS Proc.",
5056 doi = "10.1557/PROC-59-419",
5057 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5058 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5061 @Article{mukashev82,
5062 title = "Defects in Carbon-Implanted Silicon",
5063 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5064 Fukuoka and Haruo Saito",
5065 journal = "Japanese J. Appl. Phys.",
5067 number = "Part 1, No. 2",
5071 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5072 doi = "10.1143/JJAP.21.399",
5073 publisher = "The Japan Society of Applied Physics",
5077 title = "Convergence of supercell calculations for point
5078 defects in semiconductors: Vacancy in silicon",
5079 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5081 journal = "Phys. Rev. B",
5084 pages = "1318--1325",
5088 doi = "10.1103/PhysRevB.58.1318",
5089 publisher = "American Physical Society",
5090 notes = "convergence k point supercell size, vacancy in
5095 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5096 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5097 K{\"{o}}gler and W. Skorupa",
5099 title = "Spectroscopic characterization of phases formed by
5100 high-dose carbon ion implantation in silicon",
5103 journal = "J. Appl. Phys.",
5106 pages = "2978--2984",
5107 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5108 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5109 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5110 DEPENDENCE; PRECIPITATES; ANNEALING",
5111 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5112 doi = "10.1063/1.358714",
5115 @Article{romano-rodriguez96,
5116 title = "Detailed analysis of [beta]-Si{C} formation by high
5117 dose carbon ion implantation in silicon",
5118 journal = "Materials Science and Engineering B",
5123 note = "European Materials Research Society 1995 Spring
5124 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5125 Oxygen in Silicon and in Other Elemental
5128 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5129 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5130 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5131 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5133 keywords = "Silicon",
5134 keywords = "Ion implantation",
5135 notes = "incoherent 3c-sic precipitate",
5138 @Article{davidson75,
5139 title = "The iterative calculation of a few of the lowest
5140 eigenvalues and corresponding eigenvectors of large
5141 real-symmetric matrices",
5142 journal = "J. Comput. Phys.",
5149 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5150 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5151 author = "Ernest R. Davidson",
5155 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5157 author = "T. W. Adorno",
5158 ISBN = "978-3-518-01236-9",
5159 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5161 publisher = "Suhrkamp",
5164 @Misc{attenberger03,
5165 author = "Wilfried ATTENBERGER and Jörg LINDNER and Bernd
5167 title = "A {METHOD} {FOR} {FORMING} {A} {LAYERED}
5168 {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING}
5173 note = "WO 2003/034484 A3R4",
5175 howpublished = "Patent Application",
5177 URL = "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
5178 filing_num = "EP0211423",
5183 ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
5184 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
5185 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
5187 abstract = "The following invention provides a method for forming
5188 a layered semiconductor structure having a layer (5) of
5189 a first semiconductor material on a substrate (1; 1')
5190 of at least one second semiconductor material,
5191 comprising the steps of: providing said substrate (1;
5192 1'); burying said layer (5) of said first semiconductor
5193 material in said substrate (1; 1'), said buried layer
5194 (5) having an upper surface (105) and a lower surface
5195 (105) and dividing said substrate (1; 1') into an upper
5196 part (1a) and a lower part (1b; 1b', 1c); creating a
5197 buried damage layer (10; 10'; 10'', 100'') which at
5198 least partly adjoins and/or at least partly includes
5199 said upper surface (105) of said buried layer (5); and
5200 removing said upper part (1a) of said substrate (1; 1')
5201 and said buried damage layer (10; 10'; 10'', 100'') for
5202 exposing said buried layer (5). The invention also
5203 provides a corresponding layered semiconductor