2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 author = "Henri Moissan",
187 title = "Nouvelles recherches sur la météorité de Cañon
189 journal = "Comptes rendus de l'Académie des Sciences",
196 author = "Y. S. Park",
197 title = "Si{C} Materials and Devices",
198 publisher = "Academic Press",
199 address = "San Diego",
204 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
205 Calvin H. Carter Jr. and D. Asbury",
206 title = "Si{C} Seeded Boule Growth",
207 journal = "Materials Science Forum",
211 notes = "modified lely process, micropipes",
215 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
216 Thermodynamical Properties of Lennard-Jones Molecules",
217 author = "Loup Verlet",
218 journal = "Phys. Rev.",
224 doi = "10.1103/PhysRev.159.98",
225 publisher = "American Physical Society",
226 notes = "velocity verlet integration algorithm equation of
230 @Article{berendsen84,
231 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
232 Gunsteren and A. DiNola and J. R. Haak",
234 title = "Molecular dynamics with coupling to an external bath",
237 journal = "J. Chem. Phys.",
240 pages = "3684--3690",
241 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
242 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
243 URL = "http://link.aip.org/link/?JCP/81/3684/1",
244 doi = "10.1063/1.448118",
245 notes = "berendsen thermostat barostat",
249 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
251 title = "Molecular dynamics determination of defect energetics
252 in beta -Si{C} using three representative empirical
254 journal = "Modell. Simul. Mater. Sci. Eng.",
258 URL = "http://stacks.iop.org/0965-0393/3/615",
259 notes = "comparison of tersoff, pearson and eam for defect
260 energetics in sic; (m)eam parameters for sic",
265 title = "Relationship between the embedded-atom method and
267 author = "Donald W. Brenner",
268 journal = "Phys. Rev. Lett.",
275 doi = "10.1103/PhysRevLett.63.1022",
276 publisher = "American Physical Society",
277 notes = "relation of tersoff and eam potential",
281 title = "Molecular-dynamics study of self-interstitials in
283 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
284 journal = "Phys. Rev. B",
287 pages = "9552--9558",
291 doi = "10.1103/PhysRevB.35.9552",
292 publisher = "American Physical Society",
293 notes = "selft-interstitials in silicon, stillinger-weber,
294 calculation of defect formation energy, defect
299 title = "Extended interstitials in silicon and germanium",
300 author = "H. R. Schober",
301 journal = "Phys. Rev. B",
304 pages = "13013--13015",
308 doi = "10.1103/PhysRevB.39.13013",
309 publisher = "American Physical Society",
310 notes = "stillinger-weber silicon 110 stable and metastable
311 dumbbell configuration",
315 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
316 Defect accumulation, topological features, and
318 author = "F. Gao and W. J. Weber",
319 journal = "Phys. Rev. B",
326 doi = "10.1103/PhysRevB.66.024106",
327 publisher = "American Physical Society",
328 notes = "sic intro, si cascade in 3c-sic, amorphization,
329 tersoff modified, pair correlation of amorphous sic, md
333 @Article{devanathan98,
334 title = "Computer simulation of a 10 ke{V} Si displacement
336 journal = "Nucl. Instrum. Methods Phys. Res. B",
342 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
343 author = "R. Devanathan and W. J. Weber and T. Diaz de la
345 notes = "modified tersoff short range potential, ab initio
349 @Article{devanathan98_2,
350 title = "Displacement threshold energies in [beta]-Si{C}",
351 journal = "J. Nucl. Mater.",
357 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
358 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
360 notes = "modified tersoff, ab initio, combined ab initio
364 @Article{kitabatake00,
365 title = "Si{C}/Si heteroepitaxial growth",
366 author = "M. Kitabatake",
367 journal = "Thin Solid Films",
372 notes = "md simulation, sic si heteroepitaxy, mbe",
376 title = "Intrinsic point defects in crystalline silicon:
377 Tight-binding molecular dynamics studies of
378 self-diffusion, interstitial-vacancy recombination, and
380 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
382 journal = "Phys. Rev. B",
385 pages = "14279--14289",
389 doi = "10.1103/PhysRevB.55.14279",
390 publisher = "American Physical Society",
391 notes = "si self interstitial, diffusion, tbmd",
395 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
398 title = "A kinetic Monte--Carlo study of the effective
399 diffusivity of the silicon self-interstitial in the
400 presence of carbon and boron",
403 journal = "J. Appl. Phys.",
406 pages = "1963--1967",
407 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
408 CARBON ADDITIONS; BORON ADDITIONS; elemental
409 semiconductors; self-diffusion",
410 URL = "http://link.aip.org/link/?JAP/84/1963/1",
411 doi = "10.1063/1.368328",
412 notes = "kinetic monte carlo of si self interstitial
417 title = "Barrier to Migration of the Silicon
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. Lett.",
423 pages = "1129--1132",
427 doi = "10.1103/PhysRevLett.52.1129",
428 publisher = "American Physical Society",
429 notes = "si self-interstitial migration barrier",
432 @Article{bar-yam84_2,
433 title = "Electronic structure and total-energy migration
434 barriers of silicon self-interstitials",
435 author = "Y. Bar-Yam and J. D. Joannopoulos",
436 journal = "Phys. Rev. B",
439 pages = "1844--1852",
443 doi = "10.1103/PhysRevB.30.1844",
444 publisher = "American Physical Society",
448 title = "First-principles calculations of self-diffusion
449 constants in silicon",
450 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
451 and D. B. Laks and W. Andreoni and S. T. Pantelides",
452 journal = "Phys. Rev. Lett.",
455 pages = "2435--2438",
459 doi = "10.1103/PhysRevLett.70.2435",
460 publisher = "American Physical Society",
461 notes = "si self int diffusion by ab initio md, formation
462 entropy calculations",
466 title = "Tight-binding theory of native point defects in
468 author = "L. Colombo",
469 journal = "Annu. Rev. Mater. Res.",
474 doi = "10.1146/annurev.matsci.32.111601.103036",
475 publisher = "Annual Reviews",
476 notes = "si self interstitial, tbmd, virial stress",
479 @Article{al-mushadani03,
480 title = "Free-energy calculations of intrinsic point defects in
482 author = "O. K. Al-Mushadani and R. J. Needs",
483 journal = "Phys. Rev. B",
490 doi = "10.1103/PhysRevB.68.235205",
491 publisher = "American Physical Society",
492 notes = "formation energies of intrinisc point defects in
493 silicon, si self interstitials, free energy",
496 @Article{goedecker02,
497 title = "A Fourfold Coordinated Point Defect in Silicon",
498 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
499 journal = "Phys. Rev. Lett.",
506 doi = "10.1103/PhysRevLett.88.235501",
507 publisher = "American Physical Society",
508 notes = "first time ffcd, fourfold coordinated point defect in
513 title = "Ab initio molecular dynamics simulation of
514 self-interstitial diffusion in silicon",
515 author = "Beat Sahli and Wolfgang Fichtner",
516 journal = "Phys. Rev. B",
523 doi = "10.1103/PhysRevB.72.245210",
524 publisher = "American Physical Society",
525 notes = "si self int, diffusion, barrier height, voronoi
530 title = "Ab initio calculations of the interaction between
531 native point defects in silicon",
532 journal = "Mater. Sci. Eng., B",
537 note = "EMRS 2005, Symposium D - Materials Science and Device
538 Issues for Future Technologies",
540 doi = "DOI: 10.1016/j.mseb.2005.08.072",
541 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
542 author = "G. Hobler and G. Kresse",
543 notes = "vasp intrinsic si defect interaction study, capture
548 title = "Ab initio study of self-diffusion in silicon over a
549 wide temperature range: Point defect states and
550 migration mechanisms",
551 author = "Shangyi Ma and Shaoqing Wang",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.81.193203",
560 publisher = "American Physical Society",
561 notes = "si self interstitial diffusion + refs",
565 title = "Atomistic simulations on the thermal stability of the
566 antisite pair in 3{C}- and 4{H}-Si{C}",
567 author = "M. Posselt and F. Gao and W. J. Weber",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.73.125206",
576 publisher = "American Physical Society",
580 title = "Correlation between self-diffusion in Si and the
581 migration mechanisms of vacancies and
582 self-interstitials: An atomistic study",
583 author = "M. Posselt and F. Gao and H. Bracht",
584 journal = "Phys. Rev. B",
591 doi = "10.1103/PhysRevB.78.035208",
592 publisher = "American Physical Society",
593 notes = "si self-interstitial and vacancy diffusion, stillinger
598 title = "Ab initio and empirical-potential studies of defect
599 properties in $3{C}-Si{C}$",
600 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
602 journal = "Phys. Rev. B",
609 doi = "10.1103/PhysRevB.64.245208",
610 publisher = "American Physical Society",
611 notes = "defects in 3c-sic",
615 title = "Empirical potential approach for defect properties in
617 journal = "Nucl. Instrum. Methods Phys. Res. B",
624 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
625 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
626 author = "Fei Gao and William J. Weber",
627 keywords = "Empirical potential",
628 keywords = "Defect properties",
629 keywords = "Silicon carbide",
630 keywords = "Computer simulation",
631 notes = "sic potential, brenner type, like erhart/albe",
635 title = "Atomistic study of intrinsic defect migration in
637 author = "Fei Gao and William J. Weber and M. Posselt and V.
639 journal = "Phys. Rev. B",
646 doi = "10.1103/PhysRevB.69.245205",
647 publisher = "American Physical Society",
648 notes = "defect migration in sic",
652 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
655 title = "Ab Initio atomic simulations of antisite pair recovery
656 in cubic silicon carbide",
659 journal = "Appl. Phys. Lett.",
665 keywords = "ab initio calculations; silicon compounds; antisite
666 defects; wide band gap semiconductors; molecular
667 dynamics method; density functional theory;
668 electron-hole recombination; photoluminescence;
669 impurities; diffusion",
670 URL = "http://link.aip.org/link/?APL/90/221915/1",
671 doi = "10.1063/1.2743751",
674 @Article{mattoni2002,
675 title = "Self-interstitial trapping by carbon complexes in
676 crystalline silicon",
677 author = "A. Mattoni and F. Bernardini and L. Colombo",
678 journal = "Phys. Rev. B",
685 doi = "10.1103/PhysRevB.66.195214",
686 publisher = "American Physical Society",
687 notes = "c in c-si, diffusion, interstitial configuration +
688 links, interaction of carbon and silicon interstitials,
689 tersoff suitability",
693 title = "Calculations of Silicon Self-Interstitial Defects",
694 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
696 journal = "Phys. Rev. Lett.",
699 pages = "2351--2354",
703 doi = "10.1103/PhysRevLett.83.2351",
704 publisher = "American Physical Society",
705 notes = "nice images of the defects, si defect overview +
710 title = "Identification of the migration path of interstitial
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "7439--7442",
720 doi = "10.1103/PhysRevB.50.7439",
721 publisher = "American Physical Society",
722 notes = "carbon interstitial migration path shown, 001 c-si
727 title = "Theory of carbon-carbon pairs in silicon",
728 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
729 journal = "Phys. Rev. B",
732 pages = "9845--9850",
736 doi = "10.1103/PhysRevB.58.9845",
737 publisher = "American Physical Society",
738 notes = "c_i c_s pair configuration, theoretical results",
742 title = "Bistable interstitial-carbon--substitutional-carbon
744 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
746 journal = "Phys. Rev. B",
749 pages = "5765--5783",
753 doi = "10.1103/PhysRevB.42.5765",
754 publisher = "American Physical Society",
755 notes = "c_i c_s pair configuration, experimental results",
759 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
760 Shifeng Lu and Xiang-Yang Liu",
762 title = "Ab initio modeling and experimental study of {C}--{B}
766 journal = "Appl. Phys. Lett.",
770 keywords = "silicon; boron; carbon; elemental semiconductors;
771 impurity-defect interactions; ab initio calculations;
772 secondary ion mass spectra; diffusion; interstitials",
773 URL = "http://link.aip.org/link/?APL/80/52/1",
774 doi = "10.1063/1.1430505",
775 notes = "c-c 100 split, lower as a and b states of capaz",
779 title = "Ab initio investigation of carbon-related defects in
781 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
783 journal = "Phys. Rev. B",
786 pages = "12554--12557",
790 doi = "10.1103/PhysRevB.47.12554",
791 publisher = "American Physical Society",
792 notes = "c interstitials in crystalline silicon",
796 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
798 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
799 Sokrates T. Pantelides",
800 journal = "Phys. Rev. Lett.",
803 pages = "1814--1817",
807 doi = "10.1103/PhysRevLett.52.1814",
808 publisher = "American Physical Society",
809 notes = "microscopic theory diffusion silicon dft migration
814 title = "Unified Approach for Molecular Dynamics and
815 Density-Functional Theory",
816 author = "R. Car and M. Parrinello",
817 journal = "Phys. Rev. Lett.",
820 pages = "2471--2474",
824 doi = "10.1103/PhysRevLett.55.2471",
825 publisher = "American Physical Society",
826 notes = "car parrinello method, dft and md",
830 title = "Short-range order, bulk moduli, and physical trends in
831 c-$Si1-x$$Cx$ alloys",
832 author = "P. C. Kelires",
833 journal = "Phys. Rev. B",
836 pages = "8784--8787",
840 doi = "10.1103/PhysRevB.55.8784",
841 publisher = "American Physical Society",
842 notes = "c strained si, montecarlo md, bulk moduli, next
847 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
848 Application to the $Si1-x-yGexCy$ System",
849 author = "P. C. Kelires",
850 journal = "Phys. Rev. Lett.",
853 pages = "1114--1117",
857 doi = "10.1103/PhysRevLett.75.1114",
858 publisher = "American Physical Society",
859 notes = "mc md, strain compensation in si ge by c insertion",
863 title = "Low temperature electron irradiation of silicon
865 journal = "Solid State Communications",
872 doi = "DOI: 10.1016/0038-1098(70)90074-8",
873 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
874 author = "A. R. Bean and R. C. Newman",
878 title = "{EPR} Observation of the Isolated Interstitial Carbon
880 author = "G. D. Watkins and K. L. Brower",
881 journal = "Phys. Rev. Lett.",
884 pages = "1329--1332",
888 doi = "10.1103/PhysRevLett.36.1329",
889 publisher = "American Physical Society",
890 notes = "epr observations of 100 interstitial carbon atom in
895 title = "{EPR} identification of the single-acceptor state of
896 interstitial carbon in silicon",
897 author = "L. W. Song and G. D. Watkins",
898 journal = "Phys. Rev. B",
901 pages = "5759--5764",
905 doi = "10.1103/PhysRevB.42.5759",
906 publisher = "American Physical Society",
907 notes = "carbon diffusion in silicon",
911 author = "A K Tipping and R C Newman",
912 title = "The diffusion coefficient of interstitial carbon in
914 journal = "Semicond. Sci. Technol.",
918 URL = "http://stacks.iop.org/0268-1242/2/315",
920 notes = "diffusion coefficient of carbon interstitials in
925 title = "Carbon incorporation into Si at high concentrations by
926 ion implantation and solid phase epitaxy",
927 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
928 Picraux and J. K. Watanabe and J. W. Mayer",
929 journal = "J. Appl. Phys.",
934 doi = "10.1063/1.360806",
935 notes = "strained silicon, carbon supersaturation",
938 @Article{laveant2002,
939 title = "Epitaxy of carbon-rich silicon with {MBE}",
940 journal = "Mater. Sci. Eng., B",
946 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
947 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
948 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
950 notes = "low c in si, tensile stress to compensate compressive
951 stress, avoid sic precipitation",
955 author = "P. Werner and S. Eichler and G. Mariani and R.
956 K{\"{o}}gler and W. Skorupa",
957 title = "Investigation of {C}[sub x]Si defects in {C} implanted
958 silicon by transmission electron microscopy",
961 journal = "Appl. Phys. Lett.",
965 keywords = "silicon; ion implantation; carbon; crystal defects;
966 transmission electron microscopy; annealing; positron
967 annihilation; secondary ion mass spectroscopy; buried
968 layers; precipitation",
969 URL = "http://link.aip.org/link/?APL/70/252/1",
970 doi = "10.1063/1.118381",
971 notes = "si-c complexes, agglomerate, sic in si matrix, sic
975 @InProceedings{werner96,
976 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
978 booktitle = "Ion Implantation Technology. Proceedings of the 11th
979 International Conference on",
980 title = "{TEM} investigation of {C}-Si defects in carbon
987 doi = "10.1109/IIT.1996.586497",
989 notes = "c-si agglomerates dumbbells",
993 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
996 title = "Carbon diffusion in silicon",
999 journal = "Appl. Phys. Lett.",
1002 pages = "2465--2467",
1003 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1004 secondary ion mass spectra; semiconductor epitaxial
1005 layers; annealing; impurity-defect interactions;
1006 impurity distribution",
1007 URL = "http://link.aip.org/link/?APL/73/2465/1",
1008 doi = "10.1063/1.122483",
1009 notes = "c diffusion in si, kick out mechnism",
1013 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1014 Picraux and J. K. Watanabe and J. W. Mayer",
1016 title = "Precipitation and relaxation in strained Si[sub 1 -
1017 y]{C}[sub y]/Si heterostructures",
1020 journal = "J. Appl. Phys.",
1023 pages = "3656--3668",
1024 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1025 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1026 doi = "10.1063/1.357429",
1027 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1028 precipitation by substitutional carbon, coherent prec,
1029 coherent to incoherent transition strain vs interface
1034 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1037 title = "Investigation of the high temperature behavior of
1038 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1041 journal = "J. Appl. Phys.",
1044 pages = "1934--1937",
1045 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1046 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1047 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1048 TEMPERATURE RANGE 04001000 K",
1049 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1050 doi = "10.1063/1.358826",
1054 title = "Prospects for device implementation of wide band gap
1056 author = "J. H. Edgar",
1057 journal = "J. Mater. Res.",
1062 doi = "10.1557/JMR.1992.0235",
1063 notes = "properties wide band gap semiconductor, sic
1067 @Article{zirkelbach2007,
1068 title = "Monte Carlo simulation study of a selforganisation
1069 process leading to ordered precipitate structures",
1070 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1072 journal = "Nucl. Instr. and Meth. B",
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1085 title = "Monte-Carlo simulation study of the self-organization
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1128 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1129 Silicon Materials Research for Electronic and
1130 Photovoltaic Applications",
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1148 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1184 title = "Controlling the density distribution of Si{C}
1185 nanocrystals for the ion beam synthesis of buried Si{C}
1187 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1200 @Article{lindner99_2,
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1231 title = "High-dose carbon implantations into silicon:
1232 fundamental studies for new technological tricks",
1233 author = "J. K. N. Lindner",
1234 journal = "Appl. Phys. A",
1238 doi = "10.1007/s00339-002-2062-8",
1239 notes = "ibs, burried sic layers",
1243 title = "On the balance between ion beam induced nanoparticle
1244 formation and displacive precipitate resolution in the
1246 journal = "Mater. Sci. Eng., C",
1251 note = "Current Trends in Nanoscience - from Materials to
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1258 notes = "c int diffusion barrier",
1262 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1263 application in buffer layer for Ga{N} epitaxial
1265 journal = "Applied Surface Science",
1270 note = "APHYS'03 Special Issue",
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1274 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1275 and S. Nishio and K. Yasuda and Y. Ishigami",
1276 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1279 @Article{yamamoto04,
1280 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1281 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1282 implantation into Si(1 1 1) substrate",
1283 journal = "Journal of Crystal Growth",
1288 note = "Proceedings of the 11th Biennial (US) Workshop on
1289 Organometallic Vapor Phase Epitaxy (OMVPE)",
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1294 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1295 notes = "gan on 3c-sic",
1299 title = "Substrates for gallium nitride epitaxy",
1300 journal = "Materials Science and Engineering: R: Reports",
1307 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1308 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1309 author = "L. Liu and J. H. Edgar",
1310 notes = "gan substrates",
1313 @Article{takeuchi91,
1314 title = "Growth of single crystalline Ga{N} film on Si
1315 substrate using 3{C}-Si{C} as an intermediate layer",
1316 journal = "Journal of Crystal Growth",
1323 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1325 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1326 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1327 notes = "gan on 3c-sic (first time?)",
1331 author = "B. J. Alder and T. E. Wainwright",
1332 title = "Phase Transition for a Hard Sphere System",
1335 journal = "J. Chem. Phys.",
1338 pages = "1208--1209",
1339 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1340 doi = "10.1063/1.1743957",
1344 author = "B. J. Alder and T. E. Wainwright",
1345 title = "Studies in Molecular Dynamics. {I}. General Method",
1348 journal = "J. Chem. Phys.",
1352 URL = "http://link.aip.org/link/?JCP/31/459/1",
1353 doi = "10.1063/1.1730376",
1356 @Article{tersoff_si1,
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1359 author = "J. Tersoff",
1360 journal = "Phys. Rev. Lett.",
1367 doi = "10.1103/PhysRevLett.56.632",
1368 publisher = "American Physical Society",
1371 @Article{tersoff_si2,
1372 title = "New empirical approach for the structure and energy of
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1378 pages = "6991--7000",
1382 doi = "10.1103/PhysRevB.37.6991",
1383 publisher = "American Physical Society",
1386 @Article{tersoff_si3,
1387 title = "Empirical interatomic potential for silicon with
1388 improved elastic properties",
1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. B",
1393 pages = "9902--9905",
1397 doi = "10.1103/PhysRevB.38.9902",
1398 publisher = "American Physical Society",
1402 title = "Empirical Interatomic Potential for Carbon, with
1403 Applications to Amorphous Carbon",
1404 author = "J. Tersoff",
1405 journal = "Phys. Rev. Lett.",
1408 pages = "2879--2882",
1412 doi = "10.1103/PhysRevLett.61.2879",
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1417 title = "Modeling solid-state chemistry: Interatomic potentials
1418 for multicomponent systems",
1419 author = "J. Tersoff",
1420 journal = "Phys. Rev. B",
1423 pages = "5566--5568",
1427 doi = "10.1103/PhysRevB.39.5566",
1428 publisher = "American Physical Society",
1432 title = "Carbon defects and defect reactions in silicon",
1433 author = "J. Tersoff",
1434 journal = "Phys. Rev. Lett.",
1437 pages = "1757--1760",
1441 doi = "10.1103/PhysRevLett.64.1757",
1442 publisher = "American Physical Society",
1446 title = "Point defects and dopant diffusion in silicon",
1447 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1448 journal = "Rev. Mod. Phys.",
1455 doi = "10.1103/RevModPhys.61.289",
1456 publisher = "American Physical Society",
1460 title = "Silicon carbide: synthesis and processing",
1461 journal = "Nucl. Instrum. Methods Phys. Res. B",
1466 note = "Radiation Effects in Insulators",
1468 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1469 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1470 author = "W. Wesch",
1474 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1475 Lin and B. Sverdlov and M. Burns",
1477 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1478 ZnSe-based semiconductor device technologies",
1481 journal = "J. Appl. Phys.",
1484 pages = "1363--1398",
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1486 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1487 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1489 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1490 doi = "10.1063/1.358463",
1491 notes = "sic intro, properties",
1495 author = "P. G. Neudeck",
1496 title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
1497 {ELECTRONICS} {TECHNOLOGY}",
1498 journal = "Journal of Electronic Materials",
1507 author = "Noch Unbekannt",
1508 title = "How to find references",
1509 journal = "Journal of Applied References",
1516 title = "Atomistic simulation of thermomechanical properties of
1518 author = "Meijie Tang and Sidney Yip",
1519 journal = "Phys. Rev. B",
1522 pages = "15150--15159",
1525 doi = "10.1103/PhysRevB.52.15150",
1526 notes = "modified tersoff, scale cutoff with volume, promising
1527 tersoff reparametrization",
1528 publisher = "American Physical Society",
1532 title = "Silicon carbide as a new {MEMS} technology",
1533 journal = "Sensors and Actuators A: Physical",
1539 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1540 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1541 author = "Pasqualina M. Sarro",
1543 keywords = "Silicon carbide",
1544 keywords = "Micromachining",
1545 keywords = "Mechanical stress",
1549 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1550 semiconductor for high-temperature applications: {A}
1552 journal = "Solid-State Electronics",
1555 pages = "1409--1422",
1558 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1559 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1560 author = "J. B. Casady and R. W. Johnson",
1561 notes = "sic intro",
1564 @Article{giancarli98,
1565 title = "Design requirements for Si{C}/Si{C} composites
1566 structural material in fusion power reactor blankets",
1567 journal = "Fusion Engineering and Design",
1573 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1574 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1575 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1576 Marois and N. B. Morley and J. F. Salavy",
1580 title = "Electrical and optical characterization of Si{C}",
1581 journal = "Physica B: Condensed Matter",
1587 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1588 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1589 author = "G. Pensl and W. J. Choyke",
1593 title = "Investigation of growth processes of ingots of silicon
1594 carbide single crystals",
1595 journal = "J. Cryst. Growth",
1600 notes = "modified lely process",
1602 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1603 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1604 author = "Yu. M. Tairov and V. F. Tsvetkov",
1608 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1611 title = "Production of large-area single-crystal wafers of
1612 cubic Si{C} for semiconductor devices",
1615 journal = "Appl. Phys. Lett.",
1619 keywords = "silicon carbides; layers; chemical vapor deposition;
1621 URL = "http://link.aip.org/link/?APL/42/460/1",
1622 doi = "10.1063/1.93970",
1623 notes = "cvd of 3c-sic on si, sic buffer layer",
1627 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1628 and Hiroyuki Matsunami",
1630 title = "Epitaxial growth and electric characteristics of cubic
1634 journal = "J. Appl. Phys.",
1637 pages = "4889--4893",
1638 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1639 doi = "10.1063/1.338355",
1640 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1645 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1647 title = "Growth and Characterization of Cubic Si{C}
1648 Single-Crystal Films on Si",
1651 journal = "Journal of The Electrochemical Society",
1654 pages = "1558--1565",
1655 keywords = "semiconductor materials; silicon compounds; carbon
1656 compounds; crystal morphology; electron mobility",
1657 URL = "http://link.aip.org/link/?JES/134/1558/1",
1658 doi = "10.1149/1.2100708",
1659 notes = "blue light emitting diodes (led)",
1663 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1664 and Hiroyuki Matsunami",
1665 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1669 journal = "J. Appl. Phys.",
1673 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1674 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1676 URL = "http://link.aip.org/link/?JAP/73/726/1",
1677 doi = "10.1063/1.353329",
1678 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1682 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1683 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1684 Yoganathan and J. Yang and P. Pirouz",
1686 title = "Growth of improved quality 3{C}-Si{C} films on
1687 6{H}-Si{C} substrates",
1690 journal = "Appl. Phys. Lett.",
1693 pages = "1353--1355",
1694 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1695 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1696 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1698 URL = "http://link.aip.org/link/?APL/56/1353/1",
1699 doi = "10.1063/1.102512",
1700 notes = "cvd of 3c-sic on 6h-sic",
1704 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1705 Thokala and M. J. Loboda",
1707 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1708 films on 6{H}-Si{C} by chemical vapor deposition from
1712 journal = "J. Appl. Phys.",
1715 pages = "1271--1273",
1716 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1717 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1719 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1720 doi = "10.1063/1.360368",
1721 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1725 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1726 [alpha]-Si{C}(0001) at low temperatures by solid-source
1727 molecular beam epitaxy",
1728 journal = "J. Cryst. Growth",
1734 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1735 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1736 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1737 Schr{\"{o}}ter and W. Richter",
1738 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1741 @Article{fissel95_apl,
1742 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1744 title = "Low-temperature growth of Si{C} thin films on Si and
1745 6{H}--Si{C} by solid-source molecular beam epitaxy",
1748 journal = "Appl. Phys. Lett.",
1751 pages = "3182--3184",
1752 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1754 URL = "http://link.aip.org/link/?APL/66/3182/1",
1755 doi = "10.1063/1.113716",
1756 notes = "mbe 3c-sic on si and 6h-sic",
1760 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1762 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1766 journal = "Appl. Phys. Lett.",
1770 URL = "http://link.aip.org/link/?APL/18/509/1",
1771 doi = "10.1063/1.1653516",
1772 notes = "first time sic by ibs, follow cites for precipitation
1777 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1778 J. Davis and G. E. Celler",
1780 title = "Formation of buried layers of beta-Si{C} using ion
1781 beam synthesis and incoherent lamp annealing",
1784 journal = "Appl. Phys. Lett.",
1787 pages = "2242--2244",
1788 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1789 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1790 URL = "http://link.aip.org/link/?APL/51/2242/1",
1791 doi = "10.1063/1.98953",
1792 notes = "nice tem images, sic by ibs",
1796 author = "R. I. Scace and G. A. Slack",
1798 title = "Solubility of Carbon in Silicon and Germanium",
1801 journal = "J. Chem. Phys.",
1804 pages = "1551--1555",
1805 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1806 doi = "10.1063/1.1730236",
1807 notes = "solubility of c in c-si, si-c phase diagram",
1811 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1812 F. W. Saris and W. Vandervorst",
1814 title = "Role of {C} and {B} clusters in transient diffusion of
1818 journal = "Appl. Phys. Lett.",
1821 pages = "1150--1152",
1822 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1823 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1825 URL = "http://link.aip.org/link/?APL/68/1150/1",
1826 doi = "10.1063/1.115706",
1827 notes = "suppression of transient enhanced diffusion (ted)",
1831 title = "Implantation and transient boron diffusion: the role
1832 of the silicon self-interstitial",
1833 journal = "Nucl. Instrum. Methods Phys. Res. B",
1838 note = "Selected Papers of the Tenth International Conference
1839 on Ion Implantation Technology (IIT '94)",
1841 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1842 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1843 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1848 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1849 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1850 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1853 title = "Physical mechanisms of transient enhanced dopant
1854 diffusion in ion-implanted silicon",
1857 journal = "J. Appl. Phys.",
1860 pages = "6031--6050",
1861 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1862 doi = "10.1063/1.364452",
1863 notes = "ted, transient enhanced diffusion, c silicon trap",
1867 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1869 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1870 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1873 journal = "Appl. Phys. Lett.",
1877 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1878 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1879 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1881 URL = "http://link.aip.org/link/?APL/64/324/1",
1882 doi = "10.1063/1.111195",
1883 notes = "beta sic nano crystals in si, mbe, annealing",
1887 author = "Richard A. Soref",
1889 title = "Optical band gap of the ternary semiconductor Si[sub 1
1890 - x - y]Ge[sub x]{C}[sub y]",
1893 journal = "J. Appl. Phys.",
1896 pages = "2470--2472",
1897 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1898 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1900 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1901 doi = "10.1063/1.349403",
1902 notes = "band gap of strained si by c",
1906 author = "E Kasper",
1907 title = "Superlattices of group {IV} elements, a new
1908 possibility to produce direct band gap material",
1909 journal = "Physica Scripta",
1912 URL = "http://stacks.iop.org/1402-4896/T35/232",
1914 notes = "superlattices, convert indirect band gap into a
1919 author = "H. J. Osten and J. Griesche and S. Scalese",
1921 title = "Substitutional carbon incorporation in epitaxial
1922 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1923 molecular beam epitaxy",
1926 journal = "Appl. Phys. Lett.",
1930 keywords = "molecular beam epitaxial growth; semiconductor growth;
1931 wide band gap semiconductors; interstitials; silicon
1933 URL = "http://link.aip.org/link/?APL/74/836/1",
1934 doi = "10.1063/1.123384",
1935 notes = "substitutional c in si",
1938 @Article{hohenberg64,
1939 title = "Inhomogeneous Electron Gas",
1940 author = "P. Hohenberg and W. Kohn",
1941 journal = "Phys. Rev.",
1944 pages = "B864--B871",
1948 doi = "10.1103/PhysRev.136.B864",
1949 publisher = "American Physical Society",
1950 notes = "density functional theory, dft",
1954 title = "Self-Consistent Equations Including Exchange and
1955 Correlation Effects",
1956 author = "W. Kohn and L. J. Sham",
1957 journal = "Phys. Rev.",
1960 pages = "A1133--A1138",
1964 doi = "10.1103/PhysRev.140.A1133",
1965 publisher = "American Physical Society",
1966 notes = "dft, exchange and correlation",
1970 title = "Strain-stabilized highly concentrated pseudomorphic
1971 $Si1-x$$Cx$ layers in Si",
1972 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1974 journal = "Phys. Rev. Lett.",
1977 pages = "3578--3581",
1981 doi = "10.1103/PhysRevLett.72.3578",
1982 publisher = "American Physical Society",
1983 notes = "high c concentration in si, heterostructure, strained
1988 title = "Electron Transport Model for Strained Silicon-Carbon
1990 author = "Shu-Tong Chang and Chung-Yi Lin",
1991 journal = "Japanese J. Appl. Phys.",
1994 pages = "2257--2262",
1997 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1998 doi = "10.1143/JJAP.44.2257",
1999 publisher = "The Japan Society of Applied Physics",
2000 notes = "enhance of electron mobility in starined si",
2004 author = "H. J. Osten and P. Gaworzewski",
2006 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2007 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2011 journal = "J. Appl. Phys.",
2014 pages = "4977--4981",
2015 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2016 semiconductors; semiconductor epitaxial layers; carrier
2017 density; Hall mobility; interstitials; defect states",
2018 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2019 doi = "10.1063/1.366364",
2020 notes = "charge transport in strained si",
2024 title = "Carbon-mediated aggregation of self-interstitials in
2025 silicon: {A} large-scale molecular dynamics study",
2026 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2027 journal = "Phys. Rev. B",
2034 doi = "10.1103/PhysRevB.69.155214",
2035 publisher = "American Physical Society",
2036 notes = "simulation using promising tersoff reparametrization",
2040 title = "Event-Based Relaxation of Continuous Disordered
2042 author = "G. T. Barkema and Normand Mousseau",
2043 journal = "Phys. Rev. Lett.",
2046 pages = "4358--4361",
2050 doi = "10.1103/PhysRevLett.77.4358",
2051 publisher = "American Physical Society",
2052 notes = "activation relaxation technique, art, speed up slow
2057 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2058 Minoukadeh and F. Willaime",
2060 title = "Some improvements of the activation-relaxation
2061 technique method for finding transition pathways on
2062 potential energy surfaces",
2065 journal = "J. Chem. Phys.",
2071 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2072 surfaces; vacancies (crystal)",
2073 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2074 doi = "10.1063/1.3088532",
2075 notes = "improvements to art, refs for methods to find
2076 transition pathways",
2079 @Article{parrinello81,
2080 author = "M. Parrinello and A. Rahman",
2082 title = "Polymorphic transitions in single crystals: {A} new
2083 molecular dynamics method",
2086 journal = "J. Appl. Phys.",
2089 pages = "7182--7190",
2090 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2091 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2092 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2093 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2094 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2096 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2097 doi = "10.1063/1.328693",
2100 @Article{stillinger85,
2101 title = "Computer simulation of local order in condensed phases
2103 author = "Frank H. Stillinger and Thomas A. Weber",
2104 journal = "Phys. Rev. B",
2107 pages = "5262--5271",
2111 doi = "10.1103/PhysRevB.31.5262",
2112 publisher = "American Physical Society",
2116 title = "Empirical potential for hydrocarbons for use in
2117 simulating the chemical vapor deposition of diamond
2119 author = "Donald W. Brenner",
2120 journal = "Phys. Rev. B",
2123 pages = "9458--9471",
2127 doi = "10.1103/PhysRevB.42.9458",
2128 publisher = "American Physical Society",
2129 notes = "brenner hydro carbons",
2133 title = "Modeling of Covalent Bonding in Solids by Inversion of
2134 Cohesive Energy Curves",
2135 author = "Martin Z. Bazant and Efthimios Kaxiras",
2136 journal = "Phys. Rev. Lett.",
2139 pages = "4370--4373",
2143 doi = "10.1103/PhysRevLett.77.4370",
2144 publisher = "American Physical Society",
2145 notes = "first si edip",
2149 title = "Environment-dependent interatomic potential for bulk
2151 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2153 journal = "Phys. Rev. B",
2156 pages = "8542--8552",
2160 doi = "10.1103/PhysRevB.56.8542",
2161 publisher = "American Physical Society",
2162 notes = "second si edip",
2166 title = "Interatomic potential for silicon defects and
2168 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2169 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2170 journal = "Phys. Rev. B",
2173 pages = "2539--2550",
2177 doi = "10.1103/PhysRevB.58.2539",
2178 publisher = "American Physical Society",
2179 notes = "latest si edip, good dislocation explanation",
2183 title = "{PARCAS} molecular dynamics code",
2184 author = "K. Nordlund",
2189 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2191 author = "Arthur F. Voter",
2192 journal = "Phys. Rev. Lett.",
2195 pages = "3908--3911",
2199 doi = "10.1103/PhysRevLett.78.3908",
2200 publisher = "American Physical Society",
2201 notes = "hyperdynamics, accelerated md",
2205 author = "Arthur F. Voter",
2207 title = "A method for accelerating the molecular dynamics
2208 simulation of infrequent events",
2211 journal = "J. Chem. Phys.",
2214 pages = "4665--4677",
2215 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2216 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2217 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2218 energy functions; surface diffusion; reaction kinetics
2219 theory; potential energy surfaces",
2220 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2221 doi = "10.1063/1.473503",
2222 notes = "improved hyperdynamics md",
2225 @Article{sorensen2000,
2226 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2228 title = "Temperature-accelerated dynamics for simulation of
2232 journal = "J. Chem. Phys.",
2235 pages = "9599--9606",
2236 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2237 MOLECULAR DYNAMICS METHOD; surface diffusion",
2238 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2239 doi = "10.1063/1.481576",
2240 notes = "temperature accelerated dynamics, tad",
2244 title = "Parallel replica method for dynamics of infrequent
2246 author = "Arthur F. Voter",
2247 journal = "Phys. Rev. B",
2250 pages = "R13985--R13988",
2254 doi = "10.1103/PhysRevB.57.R13985",
2255 publisher = "American Physical Society",
2256 notes = "parallel replica method, accelerated md",
2260 author = "Xiongwu Wu and Shaomeng Wang",
2262 title = "Enhancing systematic motion in molecular dynamics
2266 journal = "J. Chem. Phys.",
2269 pages = "9401--9410",
2270 keywords = "molecular dynamics method; argon; Lennard-Jones
2271 potential; crystallisation; liquid theory",
2272 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2273 doi = "10.1063/1.478948",
2274 notes = "self guided md, sgmd, accelerated md, enhancing
2278 @Article{choudhary05,
2279 author = "Devashish Choudhary and Paulette Clancy",
2281 title = "Application of accelerated molecular dynamics schemes
2282 to the production of amorphous silicon",
2285 journal = "J. Chem. Phys.",
2291 keywords = "molecular dynamics method; silicon; glass structure;
2292 amorphous semiconductors",
2293 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2294 doi = "10.1063/1.1878733",
2295 notes = "explanation of sgmd and hyper md, applied to amorphous
2300 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2302 title = "Carbon precipitation in silicon: Why is it so
2306 journal = "Appl. Phys. Lett.",
2309 pages = "3336--3338",
2310 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2311 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2313 URL = "http://link.aip.org/link/?APL/62/3336/1",
2314 doi = "10.1063/1.109063",
2315 notes = "interfacial energy of cubic sic and si",
2318 @Article{chaussende08,
2319 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2320 journal = "J. Cryst. Growth",
2325 note = "Proceedings of the E-MRS Conference, Symposium G -
2326 Substrates of Wide Bandgap Materials",
2328 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2329 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2330 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2331 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2332 and A. Andreadou and E. K. Polychroniadis and C.
2333 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2334 notes = "3c-sic crystal growth, sic fabrication + links,
2339 title = "Forces in Molecules",
2340 author = "R. P. Feynman",
2341 journal = "Phys. Rev.",
2348 doi = "10.1103/PhysRev.56.340",
2349 publisher = "American Physical Society",
2350 notes = "hellmann feynman forces",
2354 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2355 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2356 their Contrasting Properties",
2357 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2359 journal = "Phys. Rev. Lett.",
2366 doi = "10.1103/PhysRevLett.84.943",
2367 publisher = "American Physical Society",
2368 notes = "si sio2 and sic sio2 interface",
2371 @Article{djurabekova08,
2372 title = "Atomistic simulation of the interface structure of Si
2373 nanocrystals embedded in amorphous silica",
2374 author = "Flyura Djurabekova and Kai Nordlund",
2375 journal = "Phys. Rev. B",
2382 doi = "10.1103/PhysRevB.77.115325",
2383 publisher = "American Physical Society",
2384 notes = "nc-si in sio2, interface energy, nc construction,
2385 angular distribution, coordination",
2389 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2390 W. Liang and J. Zou",
2392 title = "Nature of interfacial defects and their roles in
2393 strain relaxation at highly lattice mismatched
2394 3{C}-Si{C}/Si (001) interface",
2397 journal = "J. Appl. Phys.",
2403 keywords = "anelastic relaxation; crystal structure; dislocations;
2404 elemental semiconductors; semiconductor growth;
2405 semiconductor thin films; silicon; silicon compounds;
2406 stacking faults; wide band gap semiconductors",
2407 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2408 doi = "10.1063/1.3234380",
2409 notes = "sic/si interface, follow refs, tem image
2410 deconvolution, dislocation defects",
2413 @Article{kitabatake93,
2414 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2417 title = "Simulations and experiments of Si{C} heteroepitaxial
2418 growth on Si(001) surface",
2421 journal = "J. Appl. Phys.",
2424 pages = "4438--4445",
2425 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2426 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2427 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2428 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2429 doi = "10.1063/1.354385",
2430 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2435 title = "Strain relaxation and thermal stability of the
2436 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2438 journal = "Thin Solid Films",
2445 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2446 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2447 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2448 keywords = "Strain relaxation",
2449 keywords = "Interfaces",
2450 keywords = "Thermal stability",
2451 keywords = "Molecular dynamics",
2452 notes = "tersoff sic/si interface study",
2456 title = "Ab initio Study of Misfit Dislocations at the
2457 $Si{C}/Si(001)$ Interface",
2458 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2460 journal = "Phys. Rev. Lett.",
2467 doi = "10.1103/PhysRevLett.89.156101",
2468 publisher = "American Physical Society",
2469 notes = "sic/si interface study",
2472 @Article{pizzagalli03,
2473 title = "Theoretical investigations of a highly mismatched
2474 interface: Si{C}/Si(001)",
2475 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2477 journal = "Phys. Rev. B",
2484 doi = "10.1103/PhysRevB.68.195302",
2485 publisher = "American Physical Society",
2486 notes = "tersoff md and ab initio sic/si interface study",
2490 title = "Atomic configurations of dislocation core and twin
2491 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2492 electron microscopy",
2493 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2494 H. Zheng and J. W. Liang",
2495 journal = "Phys. Rev. B",
2502 doi = "10.1103/PhysRevB.75.184103",
2503 publisher = "American Physical Society",
2504 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2508 @Article{hornstra58,
2509 title = "Dislocations in the diamond lattice",
2510 journal = "Journal of Physics and Chemistry of Solids",
2517 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2518 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2519 author = "J. Hornstra",
2520 notes = "dislocations in diamond lattice",
2524 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2525 Ion `Hot' Implantation",
2526 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2527 Hirao and Naoki Arai and Tomio Izumi",
2528 journal = "Japanese Journal of Applied Physics",
2530 number = "Part 1, No. 2A",
2534 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2535 doi = "10.1143/JJAP.31.343",
2536 publisher = "The Japan Society of Applied Physics",
2537 notes = "c-c bonds in c implanted si, hot implantation
2538 efficiency, c-c hard to break by thermal annealing",
2541 @Article{eichhorn99,
2542 author = "F. Eichhorn and N. Schell and W. Matz and R.
2545 title = "Strain and Si{C} particle formation in silicon
2546 implanted with carbon ions of medium fluence studied by
2547 synchrotron x-ray diffraction",
2550 journal = "J. Appl. Phys.",
2553 pages = "4184--4187",
2554 keywords = "silicon; carbon; elemental semiconductors; chemical
2555 interdiffusion; ion implantation; X-ray diffraction;
2556 precipitation; semiconductor doping",
2557 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2558 doi = "10.1063/1.371344",
2559 notes = "sic conversion by ibs, detected substitutional carbon,
2560 expansion of si lattice",
2563 @Article{eichhorn02,
2564 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2565 Metzger and W. Matz and R. K{\"{o}}gler",
2567 title = "Structural relation between Si and Si{C} formed by
2568 carbon ion implantation",
2571 journal = "J. Appl. Phys.",
2574 pages = "1287--1292",
2575 keywords = "silicon compounds; wide band gap semiconductors; ion
2576 implantation; annealing; X-ray scattering; transmission
2577 electron microscopy",
2578 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2579 doi = "10.1063/1.1428105",
2580 notes = "3c-sic alignement to si host in ibs depending on
2581 temperature, might explain c into c sub trafo",
2585 author = "G Lucas and M Bertolus and L Pizzagalli",
2586 title = "An environment-dependent interatomic potential for
2587 silicon carbide: calculation of bulk properties,
2588 high-pressure phases, point and extended defects, and
2589 amorphous structures",
2590 journal = "J. Phys.: Condens. Matter",
2594 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2600 author = "J Godet and L Pizzagalli and S Brochard and P
2602 title = "Comparison between classical potentials and ab initio
2603 methods for silicon under large shear",
2604 journal = "J. Phys.: Condens. Matter",
2608 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2610 notes = "comparison of empirical potentials, stillinger weber,
2611 edip, tersoff, ab initio",
2614 @Article{moriguchi98,
2615 title = "Verification of Tersoff's Potential for Static
2616 Structural Analysis of Solids of Group-{IV} Elements",
2617 author = "Koji Moriguchi and Akira Shintani",
2618 journal = "Japanese J. Appl. Phys.",
2620 number = "Part 1, No. 2",
2624 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2625 doi = "10.1143/JJAP.37.414",
2626 publisher = "The Japan Society of Applied Physics",
2627 notes = "tersoff stringent test",
2630 @Article{mazzarolo01,
2631 title = "Low-energy recoils in crystalline silicon: Quantum
2633 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2634 Lulli and Eros Albertazzi",
2635 journal = "Phys. Rev. B",
2642 doi = "10.1103/PhysRevB.63.195207",
2643 publisher = "American Physical Society",
2646 @Article{holmstroem08,
2647 title = "Threshold defect production in silicon determined by
2648 density functional theory molecular dynamics
2650 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2651 journal = "Phys. Rev. B",
2658 doi = "10.1103/PhysRevB.78.045202",
2659 publisher = "American Physical Society",
2660 notes = "threshold displacement comparison empirical and ab
2664 @Article{nordlund97,
2665 title = "Repulsive interatomic potentials calculated using
2666 Hartree-Fock and density-functional theory methods",
2667 journal = "Nucl. Instrum. Methods Phys. Res. B",
2674 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2675 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2676 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2677 notes = "repulsive ab initio potential",
2681 title = "Efficiency of ab-initio total energy calculations for
2682 metals and semiconductors using a plane-wave basis
2684 journal = "Comput. Mater. Sci.",
2691 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2692 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2693 author = "G. Kresse and J. Furthm{\"{u}}ller",
2698 title = "Projector augmented-wave method",
2699 author = "P. E. Bl{\"o}chl",
2700 journal = "Phys. Rev. B",
2703 pages = "17953--17979",
2707 doi = "10.1103/PhysRevB.50.17953",
2708 publisher = "American Physical Society",
2709 notes = "paw method",
2713 title = "Norm-Conserving Pseudopotentials",
2714 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2715 journal = "Phys. Rev. Lett.",
2718 pages = "1494--1497",
2722 doi = "10.1103/PhysRevLett.43.1494",
2723 publisher = "American Physical Society",
2724 notes = "norm-conserving pseudopotentials",
2727 @Article{vanderbilt90,
2728 title = "Soft self-consistent pseudopotentials in a generalized
2729 eigenvalue formalism",
2730 author = "David Vanderbilt",
2731 journal = "Phys. Rev. B",
2734 pages = "7892--7895",
2738 doi = "10.1103/PhysRevB.41.7892",
2739 publisher = "American Physical Society",
2740 notes = "vasp pseudopotentials",
2744 title = "Accurate and simple density functional for the
2745 electronic exchange energy: Generalized gradient
2747 author = "John P. Perdew and Yue Wang",
2748 journal = "Phys. Rev. B",
2751 pages = "8800--8802",
2755 doi = "10.1103/PhysRevB.33.8800",
2756 publisher = "American Physical Society",
2757 notes = "rapid communication gga",
2761 title = "Generalized gradient approximations for exchange and
2762 correlation: {A} look backward and forward",
2763 journal = "Physica B: Condensed Matter",
2770 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2771 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2772 author = "John P. Perdew",
2773 notes = "gga overview",
2777 title = "Atoms, molecules, solids, and surfaces: Applications
2778 of the generalized gradient approximation for exchange
2780 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2781 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2782 and Carlos Fiolhais",
2783 journal = "Phys. Rev. B",
2786 pages = "6671--6687",
2790 doi = "10.1103/PhysRevB.46.6671",
2791 publisher = "American Physical Society",
2792 notes = "gga pw91 (as in vasp)",
2795 @Article{baldereschi73,
2796 title = "Mean-Value Point in the Brillouin Zone",
2797 author = "A. Baldereschi",
2798 journal = "Phys. Rev. B",
2801 pages = "5212--5215",
2805 doi = "10.1103/PhysRevB.7.5212",
2806 publisher = "American Physical Society",
2807 notes = "mean value k point",
2811 title = "Ab initio pseudopotential calculations of dopant
2813 journal = "Comput. Mater. Sci.",
2820 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2821 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2822 author = "Jing Zhu",
2823 keywords = "TED (transient enhanced diffusion)",
2824 keywords = "Boron dopant",
2825 keywords = "Carbon dopant",
2826 keywords = "Defect",
2827 keywords = "ab initio pseudopotential method",
2828 keywords = "Impurity cluster",
2829 notes = "binding of c to si interstitial, c in si defects",
2833 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2835 title = "Si{C} buried layer formation by ion beam synthesis at
2839 journal = "Appl. Phys. Lett.",
2842 pages = "2646--2648",
2843 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2844 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2845 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2846 ELECTRON MICROSCOPY",
2847 URL = "http://link.aip.org/link/?APL/66/2646/1",
2848 doi = "10.1063/1.113112",
2849 notes = "precipitation mechanism by substitutional carbon, si
2850 self interstitials react with further implanted c",
2854 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2855 Kolodzey and A. Hairie",
2857 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2861 journal = "J. Appl. Phys.",
2864 pages = "4631--4633",
2865 keywords = "silicon compounds; precipitation; localised modes;
2866 semiconductor epitaxial layers; infrared spectra;
2867 Fourier transform spectra; thermal stability;
2869 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2870 doi = "10.1063/1.368703",
2871 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2875 author = "R Jones and B J Coomer and P R Briddon",
2876 title = "Quantum mechanical modelling of defects in
2878 journal = "J. Phys.: Condens. Matter",
2882 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2884 notes = "ab inito init, vibrational modes, c defect in si",
2888 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2889 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2890 J. E. Greene and S. G. Bishop",
2892 title = "Carbon incorporation pathways and lattice sites in
2893 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2894 molecular-beam epitaxy",
2897 journal = "J. Appl. Phys.",
2900 pages = "5716--5727",
2901 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2902 doi = "10.1063/1.1465122",
2903 notes = "c substitutional incorporation pathway, dft and expt",
2907 title = "Dynamic properties of interstitial carbon and
2908 carbon-carbon pair defects in silicon",
2909 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2911 journal = "Phys. Rev. B",
2914 pages = "2188--2194",
2918 doi = "10.1103/PhysRevB.55.2188",
2919 publisher = "American Physical Society",
2920 notes = "ab initio c in si and di-carbon defect, no formation
2921 energies, different migration barriers and paths",
2925 title = "Interstitial carbon and the carbon-carbon pair in
2926 silicon: Semiempirical electronic-structure
2928 author = "Matthew J. Burnard and Gary G. DeLeo",
2929 journal = "Phys. Rev. B",
2932 pages = "10217--10225",
2936 doi = "10.1103/PhysRevB.47.10217",
2937 publisher = "American Physical Society",
2938 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
2939 carbon defect, formation energies",
2943 title = "Electronic structure of interstitial carbon in
2945 author = "Morgan Besson and Gary G. DeLeo",
2946 journal = "Phys. Rev. B",
2949 pages = "4028--4033",
2953 doi = "10.1103/PhysRevB.43.4028",
2954 publisher = "American Physical Society",
2958 title = "Review of atomistic simulations of surface diffusion
2959 and growth on semiconductors",
2960 journal = "Comput. Mater. Sci.",
2965 note = "Proceedings of the Workshop on Virtual Molecular Beam
2968 doi = "DOI: 10.1016/0927-0256(96)00030-4",
2969 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
2970 author = "Efthimios Kaxiras",
2971 notes = "might contain c 100 db formation energy, overview md,
2972 tight binding, first principles",
2975 @Article{kaukonen98,
2976 title = "Effect of {N} and {B} doping on the growth of {CVD}
2978 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
2980 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
2981 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
2983 journal = "Phys. Rev. B",
2986 pages = "9965--9970",
2990 doi = "10.1103/PhysRevB.57.9965",
2991 publisher = "American Physical Society",
2992 notes = "constrained conjugate gradient relaxation technique
2997 title = "Correlation between the antisite pair and the ${DI}$
2999 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3000 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3002 journal = "Phys. Rev. B",
3009 doi = "10.1103/PhysRevB.67.155203",
3010 publisher = "American Physical Society",
3014 title = "Production and recovery of defects in Si{C} after
3015 irradiation and deformation",
3016 journal = "J. Nucl. Mater.",
3019 pages = "1803--1808",
3023 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3024 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3025 author = "J. Chen and P. Jung and H. Klein",
3029 title = "Accumulation, dynamic annealing and thermal recovery
3030 of ion-beam-induced disorder in silicon carbide",
3031 journal = "Nucl. Instrum. Methods Phys. Res. B",
3038 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3039 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3040 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3043 @Article{bockstedte03,
3044 title = "Ab initio study of the migration of intrinsic defects
3046 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3048 journal = "Phys. Rev. B",
3055 doi = "10.1103/PhysRevB.68.205201",
3056 publisher = "American Physical Society",
3057 notes = "defect migration in sic",
3061 title = "Theoretical study of vacancy diffusion and
3062 vacancy-assisted clustering of antisites in Si{C}",
3063 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3065 journal = "Phys. Rev. B",
3072 doi = "10.1103/PhysRevB.68.155208",
3073 publisher = "American Physical Society",
3077 journal = "Telegrafiya i Telefoniya bez Provodov",
3081 author = "O. V. Lossev",
3085 title = "Luminous carborundum detector and detection effect and
3086 oscillations with crystals",
3087 journal = "Philosophical Magazine Series 7",
3090 pages = "1024--1044",
3092 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3093 author = "O. V. Lossev",
3097 journal = "Physik. Zeitschr.",
3101 author = "O. V. Lossev",
3105 journal = "Physik. Zeitschr.",
3109 author = "O. V. Lossev",
3113 journal = "Physik. Zeitschr.",
3117 author = "O. V. Lossev",
3121 title = "A note on carborundum",
3122 journal = "Electrical World",
3126 author = "H. J. Round",
3129 @Article{vashishath08,
3130 title = "Recent trends in silicon carbide device research",
3131 journal = "Mj. Int. J. Sci. Tech.",
3136 author = "Munish Vashishath and Ashoke K. Chatterjee",
3137 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3138 notes = "sic polytype electronic properties",
3142 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3144 title = "Growth and Properties of beta-Si{C} Single Crystals",
3147 journal = "Journal of Applied Physics",
3151 URL = "http://link.aip.org/link/?JAP/37/333/1",
3152 doi = "10.1063/1.1707837",
3153 notes = "sic melt growth",
3157 author = "A. E. van Arkel and J. H. de Boer",
3158 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3160 publisher = "WILEY-VCH Verlag GmbH",
3162 journal = "Z. Anorg. Chem.",
3165 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3166 doi = "10.1002/zaac.19251480133",
3167 notes = "van arkel apparatus",
3171 author = "K. Moers",
3173 journal = "Z. Anorg. Chem.",
3176 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3181 author = "J. T. Kendall",
3182 title = "Electronic Conduction in Silicon Carbide",
3185 journal = "The Journal of Chemical Physics",
3189 URL = "http://link.aip.org/link/?JCP/21/821/1",
3190 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3195 author = "J. A. Lely",
3197 journal = "Ber. Deut. Keram. Ges.",
3200 notes = "lely sublimation growth process",