2 % bibliography database
5 % molecular dynamics: basics / potential
8 author = {Paul Erhart and Karsten Albe},
9 title = {Analytical potential for atomistic simulations of silicon, carbon,
13 journal = {Phys. Rev. B},
19 notes = {alble reparametrization, analytical bond oder potential (ABOP)},
20 keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
21 wide band gap semiconductors; elasticity; enthalpy;
22 point defects; crystallographic shear; atomic forces},
23 url = {http://link.aps.org/abstract/PRB/v71/e035211},
24 doi = {10.1103/PhysRevB.71.035211}
28 title = {Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon},
30 author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
31 journal = {Phys. Rev. B},
38 doi = {10.1103/PhysRevB.65.195124},
39 publisher = {American Physical Society},
40 notes = {derivation of albe bond order formalism},
44 title = {Stress relaxation in $a-Si$ induced by ion bombardment},
45 author = {M. Koster, H. M. Urbassek},
46 journal = {Phys. Rev. B},
49 pages = {11219--11224},
53 doi = {10.1103/PhysRevB.62.11219},
54 publisher = {American Physical Society},
55 notes = {virial derivation for 3-body tersoff potential}
59 title = {Direct simulation of ion-beam-induced stressing
60 and amorphization of silicon},
61 author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
62 journal = {Phys. Rev. B},
65 pages = {12610--12616},
69 doi = {10.1103/PhysRevB.60.12610},
70 publisher = {American Physical Society},
71 notes = {virial derivation for 3-body tersoff potential}
75 title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
76 author = {Verlet, Loup },
77 journal = {Phys. Rev.},
83 doi = {10.1103/PhysRev.159.98},
84 publisher = {American Physical Society},
85 notes = {velocity verlet integration algorithm equation of motion}
88 @article{berendsen:3684,
89 author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
90 and A. DiNola and J. R. Haak},
92 title = {Molecular dynamics with coupling to an external bath},
95 journal = {The Journal of Chemical Physics},
99 keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
100 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
101 url = {http://link.aip.org/link/?JCP/81/3684/1},
102 doi = {10.1063/1.448118},
103 notes = {berendsen thermostat barostat}
106 % molecular dynamics: applications
109 title = {Molecular-dynamics study of self-interstitials in silicon},
110 author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
111 journal = {Phys. Rev. B},
114 pages = {9552--9558},
118 doi = {10.1103/PhysRevB.35.9552},
119 publisher = {American Physical Society},
120 notes = {selft-interstitials in silicon, stillinger-weber,
121 calculation of defect formation energy, defect interstitial types}
125 title = {Extended interstitials in silicon and germanium},
126 author = {H. R. Schober},
127 journal = {Phys. Rev. B},
130 pages = {13013--13015},
134 doi = {10.1103/PhysRevB.39.13013},
135 publisher = {American Physical Society},
136 notes = {stillinger-weber silicon 110 stable and metastable dumbbell
141 title = {Cascade overlap and amorphization in $3C-SiC:$
142 Defect accumulation, topological features, and disordering},
143 author = {Gao, F. and Weber, W. J.},
144 journal = {Phys. Rev. B},
151 doi = {10.1103/PhysRevB.66.024106},
152 publisher = {American Physical Society},
153 note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
154 pair correlation of amorphous sic, md result analyze}
158 title = {SiC/Si heteroepitaxial growth},
159 author = {M. Kitabatake},
160 journal = {Thin Solid Films},
165 notes = {md simulation, sic si heteroepitaxy, mbe}
171 title = {Intrinsic point defects in crystalline silicon:
172 Tight-binding molecular dynamics studiesof self-diffusion,
173 interstitial-vacancy recombination, and formation volumes},
174 author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
175 journal = {Phys. Rev. B},
178 pages = {14279--14289},
182 doi = {10.1103/PhysRevB.55.14279},
183 publisher = {American Physical Society},
184 notes = {si self interstitial, diffusion, tbmd}
188 title = {Tight-binding theory of native point defects in silicon},
189 author = {L. Colombo},
190 journal = {Annu. Rev. Mater. Res.},
195 doi = {10.1146/annurev.matsci.32.111601.103036},
196 publisher = {Annual Reviews},
197 notes = {si self interstitial, tbmd, virial stress}
203 title = {Ab initio and empirical-potential studies of defect properties
205 author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
206 journal = {Phys. Rev. B},
213 doi = {10.1103/PhysRevB.64.245208},
214 publisher = {American Physical Society},
215 notes = {defects in 3c-sic}
221 title = {Calculations of Silicon Self-Interstitial Defects},
222 author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
223 Itoh, S. and Ihara, S. },
224 journal = {Phys. Rev. Lett.},
227 pages = {2351--2354},
231 doi = {10.1103/PhysRevLett.83.2351},
232 publisher = {American Physical Society},
233 notes = {nice images of the defects}
236 @Article{PhysRevB.50.7439,
237 title = {Identification of the migration path of interstitial carbon
239 author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
240 journal = {Phys. Rev. B},
243 pages = {7439--7442},
247 doi = {10.1103/PhysRevB.50.7439},
248 publisher = {American Physical Society},
249 notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
252 % experimental stuff - interstitials
255 title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
256 author = {G. D. Watkins and K. L. Brower},
257 journal = {Phys. Rev. Lett.},
260 pages = {1329--1332},
264 doi = {10.1103/PhysRevLett.36.1329},
265 publisher = {American Physical Society},
266 notes = {epr observations of 100 interstitial carbon atom in silicon}
270 title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
271 author = {L. W. Song, G. D. Watkins},
272 journal = {Phys. Rev. B},
275 pages = {5759--5764},
279 doi = {10.1103/PhysRevB.42.5759},
280 publisher = {American Physical Society}
283 % experimental stuff - strained silicon
286 title = {Carbon incorporation into Si at high concentrations
287 by ion implantation and solid phase epitaxy},
288 author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
289 J. K. Watanabe and J. W. Mayer},
290 journal = {J. Appl. Phys.},
295 doi = {10.1063/1.360806},
296 notes = {strained silicon, carbon supersaturation}
299 @article{laveant2002,
300 title = {Epitaxy of carbon-rich silicon with MBE},
301 author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
302 journal = {Materials Science and Engineering B},
306 keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
307 notes = {low c in si, tensile stress to compensate compressive stress,
308 avoid sic precipitation}}
311 % sic formation mechanism
314 author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
315 title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
318 journal = {Applied Physics Letters},
322 keywords = {silicon; ion implantation; carbon; crystal defects;
323 transmission electron microscopy; annealing;
324 positron annihilation; secondary ion mass spectroscopy;
325 buried layers; precipitation},
326 url = {http://link.aip.org/link/?APL/70/252/1},
327 doi = {10.1063/1.118381},
328 notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
332 author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
333 J. K. Watanabe and J. W. Mayer},
335 title = {Precipitation and relaxation in strained
336 Si[sub 1 - y]C[sub y]/Si heterostructures},
339 journal = {Journal of Applied Physics},
343 keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
344 url = {http://link.aip.org/link/?JAP/76/3656/1},
345 doi = {10.1063/1.357429},
346 notes = {strained si-c to 3c-sic, carbon nucleation + refs}
352 title = {Prospects for device implementation of wide band gap semiconductors},
353 author = {J. H. Edgar},
354 journal = {J. Mater. Res.},
359 doi = {10.1557/JMR.1992.0235},
360 notes = {properties wide band gap semiconductor, sic polytypes}
363 % my own publications
365 @article{zirkelbach2007,
366 title = {Monte Carlo simulation study of a selforganisation process
367 leading to ordered precipitate structures},
368 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
369 journal = {Nucl. Instr. and Meth. B},
376 doi = {doi:10.1016/j.nimb.2006.12.118},
377 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
380 @article{zirkelbach2006,
381 title = {Monte-Carlo simulation study of the self-organization of nanometric
382 amorphous precipitates in regular arrays during ion irradiation},
383 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
384 journal = {Nucl. Instr. and Meth. B},
391 doi = {doi:10.1016/j.nimb.2005.08.162},
392 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
395 @article{zirkelbach2005,
396 title = {Modelling of a selforganization process leading to periodic arrays
397 of nanometric amorphous precipitates by ion irradiation},
398 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
399 journal = {Comp. Mater. Sci.},
406 doi = {doi:10.1016/j.commatsci.2004.12.016},
407 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
413 title = {High-dose carbon implantations into silicon:
414 fundamental studies for new technological tricks},
415 author = {J. K. N. Lindner},
416 journal = {Appl. Phys. A},
420 doi = {10.1007/s00339-002-2062-8},
421 notes = {ibs, burried sic layers}