2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 author = "Henri Moissan",
187 title = "Nouvelles recherches sur la météorité de Cañon
189 journal = "Comptes rendus de l'Académie des Sciences",
196 author = "Y. S. Park",
197 title = "Si{C} Materials and Devices",
198 publisher = "Academic Press",
199 address = "San Diego",
204 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
205 Calvin H. Carter Jr. and D. Asbury",
206 title = "Si{C} Seeded Boule Growth",
207 journal = "Materials Science Forum",
211 notes = "modified lely process, micropipes",
215 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
216 Thermodynamical Properties of Lennard-Jones Molecules",
217 author = "Loup Verlet",
218 journal = "Phys. Rev.",
224 doi = "10.1103/PhysRev.159.98",
225 publisher = "American Physical Society",
226 notes = "velocity verlet integration algorithm equation of
230 @Article{berendsen84,
231 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
232 Gunsteren and A. DiNola and J. R. Haak",
234 title = "Molecular dynamics with coupling to an external bath",
237 journal = "J. Chem. Phys.",
240 pages = "3684--3690",
241 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
242 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
243 URL = "http://link.aip.org/link/?JCP/81/3684/1",
244 doi = "10.1063/1.448118",
245 notes = "berendsen thermostat barostat",
249 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
251 title = "Molecular dynamics determination of defect energetics
252 in beta -Si{C} using three representative empirical
254 journal = "Modell. Simul. Mater. Sci. Eng.",
258 URL = "http://stacks.iop.org/0965-0393/3/615",
259 notes = "comparison of tersoff, pearson and eam for defect
260 energetics in sic; (m)eam parameters for sic",
265 title = "Relationship between the embedded-atom method and
267 author = "Donald W. Brenner",
268 journal = "Phys. Rev. Lett.",
275 doi = "10.1103/PhysRevLett.63.1022",
276 publisher = "American Physical Society",
277 notes = "relation of tersoff and eam potential",
281 title = "Molecular-dynamics study of self-interstitials in
283 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
284 journal = "Phys. Rev. B",
287 pages = "9552--9558",
291 doi = "10.1103/PhysRevB.35.9552",
292 publisher = "American Physical Society",
293 notes = "selft-interstitials in silicon, stillinger-weber,
294 calculation of defect formation energy, defect
299 title = "Extended interstitials in silicon and germanium",
300 author = "H. R. Schober",
301 journal = "Phys. Rev. B",
304 pages = "13013--13015",
308 doi = "10.1103/PhysRevB.39.13013",
309 publisher = "American Physical Society",
310 notes = "stillinger-weber silicon 110 stable and metastable
311 dumbbell configuration",
315 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
316 Defect accumulation, topological features, and
318 author = "F. Gao and W. J. Weber",
319 journal = "Phys. Rev. B",
326 doi = "10.1103/PhysRevB.66.024106",
327 publisher = "American Physical Society",
328 notes = "sic intro, si cascade in 3c-sic, amorphization,
329 tersoff modified, pair correlation of amorphous sic, md
333 @Article{devanathan98,
334 title = "Computer simulation of a 10 ke{V} Si displacement
336 journal = "Nucl. Instrum. Methods Phys. Res. B",
342 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
343 author = "R. Devanathan and W. J. Weber and T. Diaz de la
345 notes = "modified tersoff short range potential, ab initio
349 @Article{devanathan98_2,
350 title = "Displacement threshold energies in [beta]-Si{C}",
351 journal = "J. Nucl. Mater.",
357 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
358 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
360 notes = "modified tersoff, ab initio, combined ab initio
364 @Article{kitabatake00,
365 title = "Si{C}/Si heteroepitaxial growth",
366 author = "M. Kitabatake",
367 journal = "Thin Solid Films",
372 notes = "md simulation, sic si heteroepitaxy, mbe",
376 title = "Intrinsic point defects in crystalline silicon:
377 Tight-binding molecular dynamics studies of
378 self-diffusion, interstitial-vacancy recombination, and
380 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
382 journal = "Phys. Rev. B",
385 pages = "14279--14289",
389 doi = "10.1103/PhysRevB.55.14279",
390 publisher = "American Physical Society",
391 notes = "si self interstitial, diffusion, tbmd",
395 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
398 title = "A kinetic Monte--Carlo study of the effective
399 diffusivity of the silicon self-interstitial in the
400 presence of carbon and boron",
403 journal = "J. Appl. Phys.",
406 pages = "1963--1967",
407 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
408 CARBON ADDITIONS; BORON ADDITIONS; elemental
409 semiconductors; self-diffusion",
410 URL = "http://link.aip.org/link/?JAP/84/1963/1",
411 doi = "10.1063/1.368328",
412 notes = "kinetic monte carlo of si self interstitial
417 title = "Barrier to Migration of the Silicon
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. Lett.",
423 pages = "1129--1132",
427 doi = "10.1103/PhysRevLett.52.1129",
428 publisher = "American Physical Society",
429 notes = "si self-interstitial migration barrier",
432 @Article{bar-yam84_2,
433 title = "Electronic structure and total-energy migration
434 barriers of silicon self-interstitials",
435 author = "Y. Bar-Yam and J. D. Joannopoulos",
436 journal = "Phys. Rev. B",
439 pages = "1844--1852",
443 doi = "10.1103/PhysRevB.30.1844",
444 publisher = "American Physical Society",
448 title = "First-principles calculations of self-diffusion
449 constants in silicon",
450 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
451 and D. B. Laks and W. Andreoni and S. T. Pantelides",
452 journal = "Phys. Rev. Lett.",
455 pages = "2435--2438",
459 doi = "10.1103/PhysRevLett.70.2435",
460 publisher = "American Physical Society",
461 notes = "si self int diffusion by ab initio md, formation
462 entropy calculations",
466 title = "Tight-binding theory of native point defects in
468 author = "L. Colombo",
469 journal = "Annu. Rev. Mater. Res.",
474 doi = "10.1146/annurev.matsci.32.111601.103036",
475 publisher = "Annual Reviews",
476 notes = "si self interstitial, tbmd, virial stress",
479 @Article{al-mushadani03,
480 title = "Free-energy calculations of intrinsic point defects in
482 author = "O. K. Al-Mushadani and R. J. Needs",
483 journal = "Phys. Rev. B",
490 doi = "10.1103/PhysRevB.68.235205",
491 publisher = "American Physical Society",
492 notes = "formation energies of intrinisc point defects in
493 silicon, si self interstitials, free energy",
496 @Article{goedecker02,
497 title = "A Fourfold Coordinated Point Defect in Silicon",
498 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
499 journal = "Phys. Rev. Lett.",
506 doi = "10.1103/PhysRevLett.88.235501",
507 publisher = "American Physical Society",
508 notes = "first time ffcd, fourfold coordinated point defect in
513 title = "Ab initio molecular dynamics simulation of
514 self-interstitial diffusion in silicon",
515 author = "Beat Sahli and Wolfgang Fichtner",
516 journal = "Phys. Rev. B",
523 doi = "10.1103/PhysRevB.72.245210",
524 publisher = "American Physical Society",
525 notes = "si self int, diffusion, barrier height, voronoi
530 title = "Ab initio calculations of the interaction between
531 native point defects in silicon",
532 journal = "Mater. Sci. Eng., B",
537 note = "EMRS 2005, Symposium D - Materials Science and Device
538 Issues for Future Technologies",
540 doi = "DOI: 10.1016/j.mseb.2005.08.072",
541 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
542 author = "G. Hobler and G. Kresse",
543 notes = "vasp intrinsic si defect interaction study, capture
548 title = "Ab initio study of self-diffusion in silicon over a
549 wide temperature range: Point defect states and
550 migration mechanisms",
551 author = "Shangyi Ma and Shaoqing Wang",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.81.193203",
560 publisher = "American Physical Society",
561 notes = "si self interstitial diffusion + refs",
565 title = "Atomistic simulations on the thermal stability of the
566 antisite pair in 3{C}- and 4{H}-Si{C}",
567 author = "M. Posselt and F. Gao and W. J. Weber",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.73.125206",
576 publisher = "American Physical Society",
580 title = "Correlation between self-diffusion in Si and the
581 migration mechanisms of vacancies and
582 self-interstitials: An atomistic study",
583 author = "M. Posselt and F. Gao and H. Bracht",
584 journal = "Phys. Rev. B",
591 doi = "10.1103/PhysRevB.78.035208",
592 publisher = "American Physical Society",
593 notes = "si self-interstitial and vacancy diffusion, stillinger
598 title = "Ab initio and empirical-potential studies of defect
599 properties in $3{C}-Si{C}$",
600 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
602 journal = "Phys. Rev. B",
609 doi = "10.1103/PhysRevB.64.245208",
610 publisher = "American Physical Society",
611 notes = "defects in 3c-sic",
615 title = "Empirical potential approach for defect properties in
617 journal = "Nucl. Instrum. Methods Phys. Res. B",
624 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
625 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
626 author = "Fei Gao and William J. Weber",
627 keywords = "Empirical potential",
628 keywords = "Defect properties",
629 keywords = "Silicon carbide",
630 keywords = "Computer simulation",
631 notes = "sic potential, brenner type, like erhart/albe",
635 title = "Atomistic study of intrinsic defect migration in
637 author = "Fei Gao and William J. Weber and M. Posselt and V.
639 journal = "Phys. Rev. B",
646 doi = "10.1103/PhysRevB.69.245205",
647 publisher = "American Physical Society",
648 notes = "defect migration in sic",
652 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
655 title = "Ab Initio atomic simulations of antisite pair recovery
656 in cubic silicon carbide",
659 journal = "Appl. Phys. Lett.",
665 keywords = "ab initio calculations; silicon compounds; antisite
666 defects; wide band gap semiconductors; molecular
667 dynamics method; density functional theory;
668 electron-hole recombination; photoluminescence;
669 impurities; diffusion",
670 URL = "http://link.aip.org/link/?APL/90/221915/1",
671 doi = "10.1063/1.2743751",
674 @Article{mattoni2002,
675 title = "Self-interstitial trapping by carbon complexes in
676 crystalline silicon",
677 author = "A. Mattoni and F. Bernardini and L. Colombo",
678 journal = "Phys. Rev. B",
685 doi = "10.1103/PhysRevB.66.195214",
686 publisher = "American Physical Society",
687 notes = "c in c-si, diffusion, interstitial configuration +
688 links, interaction of carbon and silicon interstitials,
689 tersoff suitability",
693 title = "Calculations of Silicon Self-Interstitial Defects",
694 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
696 journal = "Phys. Rev. Lett.",
699 pages = "2351--2354",
703 doi = "10.1103/PhysRevLett.83.2351",
704 publisher = "American Physical Society",
705 notes = "nice images of the defects, si defect overview +
710 title = "Identification of the migration path of interstitial
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "7439--7442",
720 doi = "10.1103/PhysRevB.50.7439",
721 publisher = "American Physical Society",
722 notes = "carbon interstitial migration path shown, 001 c-si
727 title = "Theory of carbon-carbon pairs in silicon",
728 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
729 journal = "Phys. Rev. B",
732 pages = "9845--9850",
736 doi = "10.1103/PhysRevB.58.9845",
737 publisher = "American Physical Society",
738 notes = "c_i c_s pair configuration, theoretical results",
742 title = "Bistable interstitial-carbon--substitutional-carbon
744 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
746 journal = "Phys. Rev. B",
749 pages = "5765--5783",
753 doi = "10.1103/PhysRevB.42.5765",
754 publisher = "American Physical Society",
755 notes = "c_i c_s pair configuration, experimental results",
759 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
760 Shifeng Lu and Xiang-Yang Liu",
762 title = "Ab initio modeling and experimental study of {C}--{B}
766 journal = "Appl. Phys. Lett.",
770 keywords = "silicon; boron; carbon; elemental semiconductors;
771 impurity-defect interactions; ab initio calculations;
772 secondary ion mass spectra; diffusion; interstitials",
773 URL = "http://link.aip.org/link/?APL/80/52/1",
774 doi = "10.1063/1.1430505",
775 notes = "c-c 100 split, lower as a and b states of capaz",
779 title = "Ab initio investigation of carbon-related defects in
781 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
783 journal = "Phys. Rev. B",
786 pages = "12554--12557",
790 doi = "10.1103/PhysRevB.47.12554",
791 publisher = "American Physical Society",
792 notes = "c interstitials in crystalline silicon",
796 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
798 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
799 Sokrates T. Pantelides",
800 journal = "Phys. Rev. Lett.",
803 pages = "1814--1817",
807 doi = "10.1103/PhysRevLett.52.1814",
808 publisher = "American Physical Society",
809 notes = "microscopic theory diffusion silicon dft migration
814 title = "Unified Approach for Molecular Dynamics and
815 Density-Functional Theory",
816 author = "R. Car and M. Parrinello",
817 journal = "Phys. Rev. Lett.",
820 pages = "2471--2474",
824 doi = "10.1103/PhysRevLett.55.2471",
825 publisher = "American Physical Society",
826 notes = "car parrinello method, dft and md",
830 title = "Short-range order, bulk moduli, and physical trends in
831 c-$Si1-x$$Cx$ alloys",
832 author = "P. C. Kelires",
833 journal = "Phys. Rev. B",
836 pages = "8784--8787",
840 doi = "10.1103/PhysRevB.55.8784",
841 publisher = "American Physical Society",
842 notes = "c strained si, montecarlo md, bulk moduli, next
847 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
848 Application to the $Si1-x-yGexCy$ System",
849 author = "P. C. Kelires",
850 journal = "Phys. Rev. Lett.",
853 pages = "1114--1117",
857 doi = "10.1103/PhysRevLett.75.1114",
858 publisher = "American Physical Society",
859 notes = "mc md, strain compensation in si ge by c insertion",
863 title = "Low temperature electron irradiation of silicon
865 journal = "Solid State Communications",
872 doi = "DOI: 10.1016/0038-1098(70)90074-8",
873 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
874 author = "A. R. Bean and R. C. Newman",
878 title = "{EPR} Observation of the Isolated Interstitial Carbon
880 author = "G. D. Watkins and K. L. Brower",
881 journal = "Phys. Rev. Lett.",
884 pages = "1329--1332",
888 doi = "10.1103/PhysRevLett.36.1329",
889 publisher = "American Physical Society",
890 notes = "epr observations of 100 interstitial carbon atom in
895 title = "{EPR} identification of the single-acceptor state of
896 interstitial carbon in silicon",
897 author = "L. W. Song and G. D. Watkins",
898 journal = "Phys. Rev. B",
901 pages = "5759--5764",
905 doi = "10.1103/PhysRevB.42.5759",
906 publisher = "American Physical Society",
907 notes = "carbon diffusion in silicon",
911 author = "A K Tipping and R C Newman",
912 title = "The diffusion coefficient of interstitial carbon in
914 journal = "Semicond. Sci. Technol.",
918 URL = "http://stacks.iop.org/0268-1242/2/315",
920 notes = "diffusion coefficient of carbon interstitials in
925 title = "Carbon incorporation into Si at high concentrations by
926 ion implantation and solid phase epitaxy",
927 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
928 Picraux and J. K. Watanabe and J. W. Mayer",
929 journal = "J. Appl. Phys.",
934 doi = "10.1063/1.360806",
935 notes = "strained silicon, carbon supersaturation",
938 @Article{laveant2002,
939 title = "Epitaxy of carbon-rich silicon with {MBE}",
940 journal = "Mater. Sci. Eng., B",
946 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
947 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
948 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
950 notes = "low c in si, tensile stress to compensate compressive
951 stress, avoid sic precipitation",
955 author = "P. Werner and S. Eichler and G. Mariani and R.
956 K{\"{o}}gler and W. Skorupa",
957 title = "Investigation of {C}[sub x]Si defects in {C} implanted
958 silicon by transmission electron microscopy",
961 journal = "Appl. Phys. Lett.",
965 keywords = "silicon; ion implantation; carbon; crystal defects;
966 transmission electron microscopy; annealing; positron
967 annihilation; secondary ion mass spectroscopy; buried
968 layers; precipitation",
969 URL = "http://link.aip.org/link/?APL/70/252/1",
970 doi = "10.1063/1.118381",
971 notes = "si-c complexes, agglomerate, sic in si matrix, sic
975 @InProceedings{werner96,
976 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
978 booktitle = "Ion Implantation Technology. Proceedings of the 11th
979 International Conference on",
980 title = "{TEM} investigation of {C}-Si defects in carbon
987 doi = "10.1109/IIT.1996.586497",
989 notes = "c-si agglomerates dumbbells",
993 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
996 title = "Carbon diffusion in silicon",
999 journal = "Appl. Phys. Lett.",
1002 pages = "2465--2467",
1003 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1004 secondary ion mass spectra; semiconductor epitaxial
1005 layers; annealing; impurity-defect interactions;
1006 impurity distribution",
1007 URL = "http://link.aip.org/link/?APL/73/2465/1",
1008 doi = "10.1063/1.122483",
1009 notes = "c diffusion in si, kick out mechnism",
1013 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1014 Picraux and J. K. Watanabe and J. W. Mayer",
1016 title = "Precipitation and relaxation in strained Si[sub 1 -
1017 y]{C}[sub y]/Si heterostructures",
1020 journal = "J. Appl. Phys.",
1023 pages = "3656--3668",
1024 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1025 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1026 doi = "10.1063/1.357429",
1027 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1028 precipitation by substitutional carbon, coherent prec,
1029 coherent to incoherent transition strain vs interface
1034 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1037 title = "Investigation of the high temperature behavior of
1038 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1041 journal = "J. Appl. Phys.",
1044 pages = "1934--1937",
1045 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1046 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1047 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1048 TEMPERATURE RANGE 04001000 K",
1049 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1050 doi = "10.1063/1.358826",
1054 title = "Prospects for device implementation of wide band gap
1056 author = "J. H. Edgar",
1057 journal = "J. Mater. Res.",
1062 doi = "10.1557/JMR.1992.0235",
1063 notes = "properties wide band gap semiconductor, sic
1067 @Article{zirkelbach2007,
1068 title = "Monte Carlo simulation study of a selforganisation
1069 process leading to ordered precipitate structures",
1070 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1072 journal = "Nucl. Instr. and Meth. B",
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1129 Silicon Materials Research for Electronic and
1130 Photovoltaic Applications",
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1331 author = "B. J. Alder and T. E. Wainwright",
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1478 ZnSe-based semiconductor device technologies",
1481 journal = "J. Appl. Phys.",
1484 pages = "1363--1398",
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1486 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1491 notes = "sic intro, properties",
1495 author = "Noch Unbekannt",
1496 title = "How to find references",
1497 journal = "Journal of Applied References",
1504 title = "Atomistic simulation of thermomechanical properties of
1506 author = "Meijie Tang and Sidney Yip",
1507 journal = "Phys. Rev. B",
1510 pages = "15150--15159",
1513 doi = "10.1103/PhysRevB.52.15150",
1514 notes = "modified tersoff, scale cutoff with volume, promising
1515 tersoff reparametrization",
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1520 title = "Silicon carbide as a new {MEMS} technology",
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1532 keywords = "Micromachining",
1533 keywords = "Mechanical stress",
1537 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1538 semiconductor for high-temperature applications: {A}
1540 journal = "Solid-State Electronics",
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1552 @Article{giancarli98,
1553 title = "Design requirements for Si{C}/Si{C} composites
1554 structural material in fusion power reactor blankets",
1555 journal = "Fusion Engineering and Design",
1561 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1563 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1564 Marois and N. B. Morley and J. F. Salavy",
1568 title = "Electrical and optical characterization of Si{C}",
1569 journal = "Physica B: Condensed Matter",
1575 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1576 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1577 author = "G. Pensl and W. J. Choyke",
1581 title = "Investigation of growth processes of ingots of silicon
1582 carbide single crystals",
1583 journal = "J. Cryst. Growth",
1588 notes = "modified lely process",
1590 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1591 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1592 author = "Yu. M. Tairov and V. F. Tsvetkov",
1596 title = "General principles of growing large-size single
1597 crystals of various silicon carbide polytypes",
1598 journal = "Journal of Crystal Growth",
1605 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1606 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1607 author = "Yu.M. Tairov and V. F. Tsvetkov",
1611 title = "Si{C} boule growth by sublimation vapor transport",
1612 journal = "Journal of Crystal Growth",
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1637 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1642 title = "Control of polytype formation by surface energy
1643 effects during the growth of Si{C} monocrystals by the
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1659 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
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1666 journal = "Appl. Phys. Lett.",
1670 keywords = "silicon carbides; layers; chemical vapor deposition;
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1815 J. Choyke and J. L. Bradshaw and L. Henderson and M.
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1837 Rozgonyi and K. L. More",
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1879 Thokala and M. J. Loboda",
1881 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
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1886 journal = "J. Appl. Phys.",
1889 pages = "1271--1273",
1890 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1891 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1893 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1894 doi = "10.1063/1.360368",
1895 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1899 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1900 [alpha]-Si{C}(0001) at low temperatures by solid-source
1901 molecular beam epitaxy",
1902 journal = "J. Cryst. Growth",
1908 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1909 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1910 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1911 Schr{\"{o}}ter and W. Richter",
1912 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1915 @Article{fissel95_apl,
1916 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1918 title = "Low-temperature growth of Si{C} thin films on Si and
1919 6{H}--Si{C} by solid-source molecular beam epitaxy",
1922 journal = "Appl. Phys. Lett.",
1925 pages = "3182--3184",
1926 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1928 URL = "http://link.aip.org/link/?APL/66/3182/1",
1929 doi = "10.1063/1.113716",
1930 notes = "mbe 3c-sic on si and 6h-sic",
1934 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1936 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1940 journal = "Appl. Phys. Lett.",
1944 URL = "http://link.aip.org/link/?APL/18/509/1",
1945 doi = "10.1063/1.1653516",
1946 notes = "first time sic by ibs, follow cites for precipitation
1951 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1952 J. Davis and G. E. Celler",
1954 title = "Formation of buried layers of beta-Si{C} using ion
1955 beam synthesis and incoherent lamp annealing",
1958 journal = "Appl. Phys. Lett.",
1961 pages = "2242--2244",
1962 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1963 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1964 URL = "http://link.aip.org/link/?APL/51/2242/1",
1965 doi = "10.1063/1.98953",
1966 notes = "nice tem images, sic by ibs",
1970 author = "R. I. Scace and G. A. Slack",
1972 title = "Solubility of Carbon in Silicon and Germanium",
1975 journal = "J. Chem. Phys.",
1978 pages = "1551--1555",
1979 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1980 doi = "10.1063/1.1730236",
1981 notes = "solubility of c in c-si, si-c phase diagram",
1985 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1986 F. W. Saris and W. Vandervorst",
1988 title = "Role of {C} and {B} clusters in transient diffusion of
1992 journal = "Appl. Phys. Lett.",
1995 pages = "1150--1152",
1996 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1997 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1999 URL = "http://link.aip.org/link/?APL/68/1150/1",
2000 doi = "10.1063/1.115706",
2001 notes = "suppression of transient enhanced diffusion (ted)",
2005 title = "Implantation and transient boron diffusion: the role
2006 of the silicon self-interstitial",
2007 journal = "Nucl. Instrum. Methods Phys. Res. B",
2012 note = "Selected Papers of the Tenth International Conference
2013 on Ion Implantation Technology (IIT '94)",
2015 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2016 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2017 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2022 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2023 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2024 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2027 title = "Physical mechanisms of transient enhanced dopant
2028 diffusion in ion-implanted silicon",
2031 journal = "J. Appl. Phys.",
2034 pages = "6031--6050",
2035 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2036 doi = "10.1063/1.364452",
2037 notes = "ted, transient enhanced diffusion, c silicon trap",
2041 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2043 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2044 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2047 journal = "Appl. Phys. Lett.",
2051 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2052 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2053 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2055 URL = "http://link.aip.org/link/?APL/64/324/1",
2056 doi = "10.1063/1.111195",
2057 notes = "beta sic nano crystals in si, mbe, annealing",
2061 author = "Richard A. Soref",
2063 title = "Optical band gap of the ternary semiconductor Si[sub 1
2064 - x - y]Ge[sub x]{C}[sub y]",
2067 journal = "J. Appl. Phys.",
2070 pages = "2470--2472",
2071 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2072 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2074 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2075 doi = "10.1063/1.349403",
2076 notes = "band gap of strained si by c",
2080 author = "E Kasper",
2081 title = "Superlattices of group {IV} elements, a new
2082 possibility to produce direct band gap material",
2083 journal = "Physica Scripta",
2086 URL = "http://stacks.iop.org/1402-4896/T35/232",
2088 notes = "superlattices, convert indirect band gap into a
2093 author = "H. J. Osten and J. Griesche and S. Scalese",
2095 title = "Substitutional carbon incorporation in epitaxial
2096 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2097 molecular beam epitaxy",
2100 journal = "Appl. Phys. Lett.",
2104 keywords = "molecular beam epitaxial growth; semiconductor growth;
2105 wide band gap semiconductors; interstitials; silicon
2107 URL = "http://link.aip.org/link/?APL/74/836/1",
2108 doi = "10.1063/1.123384",
2109 notes = "substitutional c in si",
2112 @Article{hohenberg64,
2113 title = "Inhomogeneous Electron Gas",
2114 author = "P. Hohenberg and W. Kohn",
2115 journal = "Phys. Rev.",
2118 pages = "B864--B871",
2122 doi = "10.1103/PhysRev.136.B864",
2123 publisher = "American Physical Society",
2124 notes = "density functional theory, dft",
2128 title = "Self-Consistent Equations Including Exchange and
2129 Correlation Effects",
2130 author = "W. Kohn and L. J. Sham",
2131 journal = "Phys. Rev.",
2134 pages = "A1133--A1138",
2138 doi = "10.1103/PhysRev.140.A1133",
2139 publisher = "American Physical Society",
2140 notes = "dft, exchange and correlation",
2144 title = "Strain-stabilized highly concentrated pseudomorphic
2145 $Si1-x$$Cx$ layers in Si",
2146 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2148 journal = "Phys. Rev. Lett.",
2151 pages = "3578--3581",
2155 doi = "10.1103/PhysRevLett.72.3578",
2156 publisher = "American Physical Society",
2157 notes = "high c concentration in si, heterostructure, strained
2162 title = "Electron Transport Model for Strained Silicon-Carbon
2164 author = "Shu-Tong Chang and Chung-Yi Lin",
2165 journal = "Japanese J. Appl. Phys.",
2168 pages = "2257--2262",
2171 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2172 doi = "10.1143/JJAP.44.2257",
2173 publisher = "The Japan Society of Applied Physics",
2174 notes = "enhance of electron mobility in starined si",
2178 author = "H. J. Osten and P. Gaworzewski",
2180 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2181 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2185 journal = "J. Appl. Phys.",
2188 pages = "4977--4981",
2189 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2190 semiconductors; semiconductor epitaxial layers; carrier
2191 density; Hall mobility; interstitials; defect states",
2192 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2193 doi = "10.1063/1.366364",
2194 notes = "charge transport in strained si",
2198 title = "Carbon-mediated aggregation of self-interstitials in
2199 silicon: {A} large-scale molecular dynamics study",
2200 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2201 journal = "Phys. Rev. B",
2208 doi = "10.1103/PhysRevB.69.155214",
2209 publisher = "American Physical Society",
2210 notes = "simulation using promising tersoff reparametrization",
2214 title = "Event-Based Relaxation of Continuous Disordered
2216 author = "G. T. Barkema and Normand Mousseau",
2217 journal = "Phys. Rev. Lett.",
2220 pages = "4358--4361",
2224 doi = "10.1103/PhysRevLett.77.4358",
2225 publisher = "American Physical Society",
2226 notes = "activation relaxation technique, art, speed up slow
2231 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2232 Minoukadeh and F. Willaime",
2234 title = "Some improvements of the activation-relaxation
2235 technique method for finding transition pathways on
2236 potential energy surfaces",
2239 journal = "J. Chem. Phys.",
2245 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2246 surfaces; vacancies (crystal)",
2247 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2248 doi = "10.1063/1.3088532",
2249 notes = "improvements to art, refs for methods to find
2250 transition pathways",
2253 @Article{parrinello81,
2254 author = "M. Parrinello and A. Rahman",
2256 title = "Polymorphic transitions in single crystals: {A} new
2257 molecular dynamics method",
2260 journal = "J. Appl. Phys.",
2263 pages = "7182--7190",
2264 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2265 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2266 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2267 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2268 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2270 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2271 doi = "10.1063/1.328693",
2274 @Article{stillinger85,
2275 title = "Computer simulation of local order in condensed phases
2277 author = "Frank H. Stillinger and Thomas A. Weber",
2278 journal = "Phys. Rev. B",
2281 pages = "5262--5271",
2285 doi = "10.1103/PhysRevB.31.5262",
2286 publisher = "American Physical Society",
2290 title = "Empirical potential for hydrocarbons for use in
2291 simulating the chemical vapor deposition of diamond
2293 author = "Donald W. Brenner",
2294 journal = "Phys. Rev. B",
2297 pages = "9458--9471",
2301 doi = "10.1103/PhysRevB.42.9458",
2302 publisher = "American Physical Society",
2303 notes = "brenner hydro carbons",
2307 title = "Modeling of Covalent Bonding in Solids by Inversion of
2308 Cohesive Energy Curves",
2309 author = "Martin Z. Bazant and Efthimios Kaxiras",
2310 journal = "Phys. Rev. Lett.",
2313 pages = "4370--4373",
2317 doi = "10.1103/PhysRevLett.77.4370",
2318 publisher = "American Physical Society",
2319 notes = "first si edip",
2323 title = "Environment-dependent interatomic potential for bulk
2325 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2327 journal = "Phys. Rev. B",
2330 pages = "8542--8552",
2334 doi = "10.1103/PhysRevB.56.8542",
2335 publisher = "American Physical Society",
2336 notes = "second si edip",
2340 title = "Interatomic potential for silicon defects and
2342 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2343 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2344 journal = "Phys. Rev. B",
2347 pages = "2539--2550",
2351 doi = "10.1103/PhysRevB.58.2539",
2352 publisher = "American Physical Society",
2353 notes = "latest si edip, good dislocation explanation",
2357 title = "{PARCAS} molecular dynamics code",
2358 author = "K. Nordlund",
2363 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2365 author = "Arthur F. Voter",
2366 journal = "Phys. Rev. Lett.",
2369 pages = "3908--3911",
2373 doi = "10.1103/PhysRevLett.78.3908",
2374 publisher = "American Physical Society",
2375 notes = "hyperdynamics, accelerated md",
2379 author = "Arthur F. Voter",
2381 title = "A method for accelerating the molecular dynamics
2382 simulation of infrequent events",
2385 journal = "J. Chem. Phys.",
2388 pages = "4665--4677",
2389 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2390 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2391 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2392 energy functions; surface diffusion; reaction kinetics
2393 theory; potential energy surfaces",
2394 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2395 doi = "10.1063/1.473503",
2396 notes = "improved hyperdynamics md",
2399 @Article{sorensen2000,
2400 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2402 title = "Temperature-accelerated dynamics for simulation of
2406 journal = "J. Chem. Phys.",
2409 pages = "9599--9606",
2410 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2411 MOLECULAR DYNAMICS METHOD; surface diffusion",
2412 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2413 doi = "10.1063/1.481576",
2414 notes = "temperature accelerated dynamics, tad",
2418 title = "Parallel replica method for dynamics of infrequent
2420 author = "Arthur F. Voter",
2421 journal = "Phys. Rev. B",
2424 pages = "R13985--R13988",
2428 doi = "10.1103/PhysRevB.57.R13985",
2429 publisher = "American Physical Society",
2430 notes = "parallel replica method, accelerated md",
2434 author = "Xiongwu Wu and Shaomeng Wang",
2436 title = "Enhancing systematic motion in molecular dynamics
2440 journal = "J. Chem. Phys.",
2443 pages = "9401--9410",
2444 keywords = "molecular dynamics method; argon; Lennard-Jones
2445 potential; crystallisation; liquid theory",
2446 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2447 doi = "10.1063/1.478948",
2448 notes = "self guided md, sgmd, accelerated md, enhancing
2452 @Article{choudhary05,
2453 author = "Devashish Choudhary and Paulette Clancy",
2455 title = "Application of accelerated molecular dynamics schemes
2456 to the production of amorphous silicon",
2459 journal = "J. Chem. Phys.",
2465 keywords = "molecular dynamics method; silicon; glass structure;
2466 amorphous semiconductors",
2467 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2468 doi = "10.1063/1.1878733",
2469 notes = "explanation of sgmd and hyper md, applied to amorphous
2474 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2476 title = "Carbon precipitation in silicon: Why is it so
2480 journal = "Appl. Phys. Lett.",
2483 pages = "3336--3338",
2484 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2485 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2487 URL = "http://link.aip.org/link/?APL/62/3336/1",
2488 doi = "10.1063/1.109063",
2489 notes = "interfacial energy of cubic sic and si",
2492 @Article{chaussende08,
2493 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2494 journal = "J. Cryst. Growth",
2499 note = "Proceedings of the E-MRS Conference, Symposium G -
2500 Substrates of Wide Bandgap Materials",
2502 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2503 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2504 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2505 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2506 and A. Andreadou and E. K. Polychroniadis and C.
2507 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2508 notes = "3c-sic crystal growth, sic fabrication + links,
2512 @Article{chaussende07,
2513 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2514 title = "Status of Si{C} bulk growth processes",
2515 journal = "Journal of Physics D: Applied Physics",
2519 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2521 notes = "review of sic single crystal growth methods, process
2526 title = "Forces in Molecules",
2527 author = "R. P. Feynman",
2528 journal = "Phys. Rev.",
2535 doi = "10.1103/PhysRev.56.340",
2536 publisher = "American Physical Society",
2537 notes = "hellmann feynman forces",
2541 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2542 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2543 their Contrasting Properties",
2544 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2546 journal = "Phys. Rev. Lett.",
2553 doi = "10.1103/PhysRevLett.84.943",
2554 publisher = "American Physical Society",
2555 notes = "si sio2 and sic sio2 interface",
2558 @Article{djurabekova08,
2559 title = "Atomistic simulation of the interface structure of Si
2560 nanocrystals embedded in amorphous silica",
2561 author = "Flyura Djurabekova and Kai Nordlund",
2562 journal = "Phys. Rev. B",
2569 doi = "10.1103/PhysRevB.77.115325",
2570 publisher = "American Physical Society",
2571 notes = "nc-si in sio2, interface energy, nc construction,
2572 angular distribution, coordination",
2576 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2577 W. Liang and J. Zou",
2579 title = "Nature of interfacial defects and their roles in
2580 strain relaxation at highly lattice mismatched
2581 3{C}-Si{C}/Si (001) interface",
2584 journal = "J. Appl. Phys.",
2590 keywords = "anelastic relaxation; crystal structure; dislocations;
2591 elemental semiconductors; semiconductor growth;
2592 semiconductor thin films; silicon; silicon compounds;
2593 stacking faults; wide band gap semiconductors",
2594 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2595 doi = "10.1063/1.3234380",
2596 notes = "sic/si interface, follow refs, tem image
2597 deconvolution, dislocation defects",
2600 @Article{kitabatake93,
2601 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2604 title = "Simulations and experiments of Si{C} heteroepitaxial
2605 growth on Si(001) surface",
2608 journal = "J. Appl. Phys.",
2611 pages = "4438--4445",
2612 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2613 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2614 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2615 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2616 doi = "10.1063/1.354385",
2617 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2621 @Article{kitabatake97,
2622 author = "Makoto Kitabatake",
2623 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2624 Heteroepitaxial Growth",
2625 publisher = "WILEY-VCH Verlag",
2627 journal = "physica status solidi (b)",
2630 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2631 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2632 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2636 title = "Strain relaxation and thermal stability of the
2637 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2639 journal = "Thin Solid Films",
2646 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2647 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2648 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2649 keywords = "Strain relaxation",
2650 keywords = "Interfaces",
2651 keywords = "Thermal stability",
2652 keywords = "Molecular dynamics",
2653 notes = "tersoff sic/si interface study",
2657 title = "Ab initio Study of Misfit Dislocations at the
2658 $Si{C}/Si(001)$ Interface",
2659 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2661 journal = "Phys. Rev. Lett.",
2668 doi = "10.1103/PhysRevLett.89.156101",
2669 publisher = "American Physical Society",
2670 notes = "sic/si interface study",
2673 @Article{pizzagalli03,
2674 title = "Theoretical investigations of a highly mismatched
2675 interface: Si{C}/Si(001)",
2676 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2678 journal = "Phys. Rev. B",
2685 doi = "10.1103/PhysRevB.68.195302",
2686 publisher = "American Physical Society",
2687 notes = "tersoff md and ab initio sic/si interface study",
2691 title = "Atomic configurations of dislocation core and twin
2692 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2693 electron microscopy",
2694 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2695 H. Zheng and J. W. Liang",
2696 journal = "Phys. Rev. B",
2703 doi = "10.1103/PhysRevB.75.184103",
2704 publisher = "American Physical Society",
2705 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2709 @Article{hornstra58,
2710 title = "Dislocations in the diamond lattice",
2711 journal = "Journal of Physics and Chemistry of Solids",
2718 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2719 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2720 author = "J. Hornstra",
2721 notes = "dislocations in diamond lattice",
2725 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2726 Ion `Hot' Implantation",
2727 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2728 Hirao and Naoki Arai and Tomio Izumi",
2729 journal = "Japanese Journal of Applied Physics",
2731 number = "Part 1, No. 2A",
2735 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2736 doi = "10.1143/JJAP.31.343",
2737 publisher = "The Japan Society of Applied Physics",
2738 notes = "c-c bonds in c implanted si, hot implantation
2739 efficiency, c-c hard to break by thermal annealing",
2742 @Article{eichhorn99,
2743 author = "F. Eichhorn and N. Schell and W. Matz and R.
2746 title = "Strain and Si{C} particle formation in silicon
2747 implanted with carbon ions of medium fluence studied by
2748 synchrotron x-ray diffraction",
2751 journal = "J. Appl. Phys.",
2754 pages = "4184--4187",
2755 keywords = "silicon; carbon; elemental semiconductors; chemical
2756 interdiffusion; ion implantation; X-ray diffraction;
2757 precipitation; semiconductor doping",
2758 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2759 doi = "10.1063/1.371344",
2760 notes = "sic conversion by ibs, detected substitutional carbon,
2761 expansion of si lattice",
2764 @Article{eichhorn02,
2765 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2766 Metzger and W. Matz and R. K{\"{o}}gler",
2768 title = "Structural relation between Si and Si{C} formed by
2769 carbon ion implantation",
2772 journal = "J. Appl. Phys.",
2775 pages = "1287--1292",
2776 keywords = "silicon compounds; wide band gap semiconductors; ion
2777 implantation; annealing; X-ray scattering; transmission
2778 electron microscopy",
2779 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2780 doi = "10.1063/1.1428105",
2781 notes = "3c-sic alignement to si host in ibs depending on
2782 temperature, might explain c into c sub trafo",
2786 author = "G Lucas and M Bertolus and L Pizzagalli",
2787 title = "An environment-dependent interatomic potential for
2788 silicon carbide: calculation of bulk properties,
2789 high-pressure phases, point and extended defects, and
2790 amorphous structures",
2791 journal = "J. Phys.: Condens. Matter",
2795 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2801 author = "J Godet and L Pizzagalli and S Brochard and P
2803 title = "Comparison between classical potentials and ab initio
2804 methods for silicon under large shear",
2805 journal = "J. Phys.: Condens. Matter",
2809 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2811 notes = "comparison of empirical potentials, stillinger weber,
2812 edip, tersoff, ab initio",
2815 @Article{moriguchi98,
2816 title = "Verification of Tersoff's Potential for Static
2817 Structural Analysis of Solids of Group-{IV} Elements",
2818 author = "Koji Moriguchi and Akira Shintani",
2819 journal = "Japanese J. Appl. Phys.",
2821 number = "Part 1, No. 2",
2825 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2826 doi = "10.1143/JJAP.37.414",
2827 publisher = "The Japan Society of Applied Physics",
2828 notes = "tersoff stringent test",
2831 @Article{mazzarolo01,
2832 title = "Low-energy recoils in crystalline silicon: Quantum
2834 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2835 Lulli and Eros Albertazzi",
2836 journal = "Phys. Rev. B",
2843 doi = "10.1103/PhysRevB.63.195207",
2844 publisher = "American Physical Society",
2847 @Article{holmstroem08,
2848 title = "Threshold defect production in silicon determined by
2849 density functional theory molecular dynamics
2851 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2852 journal = "Phys. Rev. B",
2859 doi = "10.1103/PhysRevB.78.045202",
2860 publisher = "American Physical Society",
2861 notes = "threshold displacement comparison empirical and ab
2865 @Article{nordlund97,
2866 title = "Repulsive interatomic potentials calculated using
2867 Hartree-Fock and density-functional theory methods",
2868 journal = "Nucl. Instrum. Methods Phys. Res. B",
2875 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2876 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2877 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2878 notes = "repulsive ab initio potential",
2882 title = "Efficiency of ab-initio total energy calculations for
2883 metals and semiconductors using a plane-wave basis
2885 journal = "Comput. Mater. Sci.",
2892 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2893 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2894 author = "G. Kresse and J. Furthm{\"{u}}ller",
2899 title = "Projector augmented-wave method",
2900 author = "P. E. Bl{\"o}chl",
2901 journal = "Phys. Rev. B",
2904 pages = "17953--17979",
2908 doi = "10.1103/PhysRevB.50.17953",
2909 publisher = "American Physical Society",
2910 notes = "paw method",
2914 title = "Norm-Conserving Pseudopotentials",
2915 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2916 journal = "Phys. Rev. Lett.",
2919 pages = "1494--1497",
2923 doi = "10.1103/PhysRevLett.43.1494",
2924 publisher = "American Physical Society",
2925 notes = "norm-conserving pseudopotentials",
2928 @Article{vanderbilt90,
2929 title = "Soft self-consistent pseudopotentials in a generalized
2930 eigenvalue formalism",
2931 author = "David Vanderbilt",
2932 journal = "Phys. Rev. B",
2935 pages = "7892--7895",
2939 doi = "10.1103/PhysRevB.41.7892",
2940 publisher = "American Physical Society",
2941 notes = "vasp pseudopotentials",
2945 title = "Accurate and simple density functional for the
2946 electronic exchange energy: Generalized gradient
2948 author = "John P. Perdew and Yue Wang",
2949 journal = "Phys. Rev. B",
2952 pages = "8800--8802",
2956 doi = "10.1103/PhysRevB.33.8800",
2957 publisher = "American Physical Society",
2958 notes = "rapid communication gga",
2962 title = "Generalized gradient approximations for exchange and
2963 correlation: {A} look backward and forward",
2964 journal = "Physica B: Condensed Matter",
2971 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2972 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2973 author = "John P. Perdew",
2974 notes = "gga overview",
2978 title = "Atoms, molecules, solids, and surfaces: Applications
2979 of the generalized gradient approximation for exchange
2981 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2982 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2983 and Carlos Fiolhais",
2984 journal = "Phys. Rev. B",
2987 pages = "6671--6687",
2991 doi = "10.1103/PhysRevB.46.6671",
2992 publisher = "American Physical Society",
2993 notes = "gga pw91 (as in vasp)",
2996 @Article{baldereschi73,
2997 title = "Mean-Value Point in the Brillouin Zone",
2998 author = "A. Baldereschi",
2999 journal = "Phys. Rev. B",
3002 pages = "5212--5215",
3006 doi = "10.1103/PhysRevB.7.5212",
3007 publisher = "American Physical Society",
3008 notes = "mean value k point",
3012 title = "Ab initio pseudopotential calculations of dopant
3014 journal = "Comput. Mater. Sci.",
3021 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3022 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3023 author = "Jing Zhu",
3024 keywords = "TED (transient enhanced diffusion)",
3025 keywords = "Boron dopant",
3026 keywords = "Carbon dopant",
3027 keywords = "Defect",
3028 keywords = "ab initio pseudopotential method",
3029 keywords = "Impurity cluster",
3030 notes = "binding of c to si interstitial, c in si defects",
3034 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3036 title = "Si{C} buried layer formation by ion beam synthesis at
3040 journal = "Appl. Phys. Lett.",
3043 pages = "2646--2648",
3044 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3045 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3046 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3047 ELECTRON MICROSCOPY",
3048 URL = "http://link.aip.org/link/?APL/66/2646/1",
3049 doi = "10.1063/1.113112",
3050 notes = "precipitation mechanism by substitutional carbon, si
3051 self interstitials react with further implanted c",
3055 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3056 Kolodzey and A. Hairie",
3058 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3062 journal = "J. Appl. Phys.",
3065 pages = "4631--4633",
3066 keywords = "silicon compounds; precipitation; localised modes;
3067 semiconductor epitaxial layers; infrared spectra;
3068 Fourier transform spectra; thermal stability;
3070 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3071 doi = "10.1063/1.368703",
3072 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3076 author = "R Jones and B J Coomer and P R Briddon",
3077 title = "Quantum mechanical modelling of defects in
3079 journal = "J. Phys.: Condens. Matter",
3083 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3085 notes = "ab inito init, vibrational modes, c defect in si",
3089 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3090 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3091 J. E. Greene and S. G. Bishop",
3093 title = "Carbon incorporation pathways and lattice sites in
3094 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3095 molecular-beam epitaxy",
3098 journal = "J. Appl. Phys.",
3101 pages = "5716--5727",
3102 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3103 doi = "10.1063/1.1465122",
3104 notes = "c substitutional incorporation pathway, dft and expt",
3108 title = "Dynamic properties of interstitial carbon and
3109 carbon-carbon pair defects in silicon",
3110 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3112 journal = "Phys. Rev. B",
3115 pages = "2188--2194",
3119 doi = "10.1103/PhysRevB.55.2188",
3120 publisher = "American Physical Society",
3121 notes = "ab initio c in si and di-carbon defect, no formation
3122 energies, different migration barriers and paths",
3126 title = "Interstitial carbon and the carbon-carbon pair in
3127 silicon: Semiempirical electronic-structure
3129 author = "Matthew J. Burnard and Gary G. DeLeo",
3130 journal = "Phys. Rev. B",
3133 pages = "10217--10225",
3137 doi = "10.1103/PhysRevB.47.10217",
3138 publisher = "American Physical Society",
3139 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3140 carbon defect, formation energies",
3144 title = "Electronic structure of interstitial carbon in
3146 author = "Morgan Besson and Gary G. DeLeo",
3147 journal = "Phys. Rev. B",
3150 pages = "4028--4033",
3154 doi = "10.1103/PhysRevB.43.4028",
3155 publisher = "American Physical Society",
3159 title = "Review of atomistic simulations of surface diffusion
3160 and growth on semiconductors",
3161 journal = "Comput. Mater. Sci.",
3166 note = "Proceedings of the Workshop on Virtual Molecular Beam
3169 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3170 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3171 author = "Efthimios Kaxiras",
3172 notes = "might contain c 100 db formation energy, overview md,
3173 tight binding, first principles",
3176 @Article{kaukonen98,
3177 title = "Effect of {N} and {B} doping on the growth of {CVD}
3179 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3181 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3182 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3184 journal = "Phys. Rev. B",
3187 pages = "9965--9970",
3191 doi = "10.1103/PhysRevB.57.9965",
3192 publisher = "American Physical Society",
3193 notes = "constrained conjugate gradient relaxation technique
3198 title = "Correlation between the antisite pair and the ${DI}$
3200 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3201 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3203 journal = "Phys. Rev. B",
3210 doi = "10.1103/PhysRevB.67.155203",
3211 publisher = "American Physical Society",
3215 title = "Production and recovery of defects in Si{C} after
3216 irradiation and deformation",
3217 journal = "J. Nucl. Mater.",
3220 pages = "1803--1808",
3224 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3225 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3226 author = "J. Chen and P. Jung and H. Klein",
3230 title = "Accumulation, dynamic annealing and thermal recovery
3231 of ion-beam-induced disorder in silicon carbide",
3232 journal = "Nucl. Instrum. Methods Phys. Res. B",
3239 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3240 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3241 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3244 @Article{bockstedte03,
3245 title = "Ab initio study of the migration of intrinsic defects
3247 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3249 journal = "Phys. Rev. B",
3256 doi = "10.1103/PhysRevB.68.205201",
3257 publisher = "American Physical Society",
3258 notes = "defect migration in sic",
3262 title = "Theoretical study of vacancy diffusion and
3263 vacancy-assisted clustering of antisites in Si{C}",
3264 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3266 journal = "Phys. Rev. B",
3273 doi = "10.1103/PhysRevB.68.155208",
3274 publisher = "American Physical Society",
3278 journal = "Telegrafiya i Telefoniya bez Provodov",
3282 author = "O. V. Lossev",
3286 title = "Luminous carborundum detector and detection effect and
3287 oscillations with crystals",
3288 journal = "Philosophical Magazine Series 7",
3291 pages = "1024--1044",
3293 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3294 author = "O. V. Lossev",
3298 journal = "Physik. Zeitschr.",
3302 author = "O. V. Lossev",
3306 journal = "Physik. Zeitschr.",
3310 author = "O. V. Lossev",
3314 journal = "Physik. Zeitschr.",
3318 author = "O. V. Lossev",
3322 title = "A note on carborundum",
3323 journal = "Electrical World",
3327 author = "H. J. Round",
3330 @Article{vashishath08,
3331 title = "Recent trends in silicon carbide device research",
3332 journal = "Mj. Int. J. Sci. Tech.",
3337 author = "Munish Vashishath and Ashoke K. Chatterjee",
3338 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3339 notes = "sic polytype electronic properties",
3343 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3345 title = "Growth and Properties of beta-Si{C} Single Crystals",
3348 journal = "Journal of Applied Physics",
3352 URL = "http://link.aip.org/link/?JAP/37/333/1",
3353 doi = "10.1063/1.1707837",
3354 notes = "sic melt growth",
3358 author = "A. E. van Arkel and J. H. de Boer",
3359 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3361 publisher = "WILEY-VCH Verlag GmbH",
3363 journal = "Z. Anorg. Chem.",
3366 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3367 doi = "10.1002/zaac.19251480133",
3368 notes = "van arkel apparatus",
3372 author = "K. Moers",
3374 journal = "Z. Anorg. Chem.",
3377 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3382 author = "J. T. Kendall",
3383 title = "Electronic Conduction in Silicon Carbide",
3386 journal = "The Journal of Chemical Physics",
3390 URL = "http://link.aip.org/link/?JCP/21/821/1",
3391 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3396 author = "J. A. Lely",
3398 journal = "Ber. Deut. Keram. Ges.",
3401 notes = "lely sublimation growth process",
3404 @Article{knippenberg63,
3405 author = "W. F. Knippenberg",
3407 journal = "Philips Res. Repts.",
3410 notes = "acheson process",
3413 @Article{hoffmann82,
3414 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3417 title = "Silicon carbide blue light emitting diodes with
3418 improved external quantum efficiency",
3421 journal = "Journal of Applied Physics",
3424 pages = "6962--6967",
3425 keywords = "light emitting diodes; silicon carbides; quantum
3426 efficiency; visible radiation; experimental data;
3427 epitaxy; fabrication; medium temperature; layers;
3428 aluminium; nitrogen; substrates; pn junctions;
3429 electroluminescence; spectra; current density;
3431 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3432 doi = "10.1063/1.330041",
3433 notes = "blue led, sublimation process",
3437 author = "Philip Neudeck",
3438 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3439 Road 44135 Cleveland OH",
3440 title = "Progress in silicon carbide semiconductor electronics
3442 journal = "Journal of Electronic Materials",
3443 publisher = "Springer Boston",
3445 keyword = "Chemistry and Materials Science",
3449 URL = "http://dx.doi.org/10.1007/BF02659688",
3450 note = "10.1007/BF02659688",
3452 notes = "sic data, advantages of 3c sic",
3455 @Article{bhatnagar93,
3456 author = "M. Bhatnagar and B. J. Baliga",
3457 journal = "Electron Devices, IEEE Transactions on",
3458 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3465 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3466 rectifiers;Si;SiC;breakdown voltages;drift region
3467 properties;output characteristics;power MOSFETs;power
3468 semiconductor devices;switching characteristics;thermal
3469 analysis;Schottky-barrier diodes;electric breakdown of
3470 solids;insulated gate field effect transistors;power
3471 transistors;semiconductor materials;silicon;silicon
3472 compounds;solid-state rectifiers;thermal analysis;",
3473 doi = "10.1109/16.199372",
3475 notes = "comparison 3c 6h sic and si devices",
3479 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3480 A. Powell and C. S. Salupo and L. G. Matus",
3481 journal = "Electron Devices, IEEE Transactions on",
3482 title = "Electrical properties of epitaxial 3{C}- and
3483 6{H}-Si{C} p-n junction diodes produced side-by-side on
3484 6{H}-Si{C} substrates",
3490 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3491 C;6H-SiC layers;6H-SiC substrates;CVD
3492 process;SiC;chemical vapor deposition;doping;electrical
3493 properties;epitaxial layers;light
3494 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3495 diodes;polytype;rectification characteristics;reverse
3496 leakage current;reverse voltages;temperature;leakage
3497 currents;power electronics;semiconductor
3498 diodes;semiconductor epitaxial layers;semiconductor
3499 growth;semiconductor materials;silicon
3500 compounds;solid-state rectifiers;substrates;vapour
3501 phase epitaxial growth;",
3502 doi = "10.1109/16.285038",
3504 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3509 author = "N. Schulze and D. L. Barrett and G. Pensl",
3511 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3512 single crystals by physical vapor transport",
3515 journal = "Applied Physics Letters",
3518 pages = "1632--1634",
3519 keywords = "silicon compounds; semiconductor materials;
3520 semiconductor growth; crystal growth from vapour;
3521 photoluminescence; Hall mobility",
3522 URL = "http://link.aip.org/link/?APL/72/1632/1",
3523 doi = "10.1063/1.121136",
3524 notes = "micropipe free 6h-sic pvt growth",
3528 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3530 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3533 journal = "Applied Physics Letters",
3537 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3538 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3539 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3540 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3542 URL = "http://link.aip.org/link/?APL/50/221/1",
3543 doi = "10.1063/1.97667",
3544 notes = "apb 3c-sic heteroepitaxy on si",
3547 @Article{shibahara86,
3548 title = "Surface morphology of cubic Si{C}(100) grown on
3549 Si(100) by chemical vapor deposition",
3550 journal = "Journal of Crystal Growth",
3557 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3558 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3559 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3561 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3564 @Article{desjardins96,
3565 author = "P. Desjardins and J. E. Greene",
3567 title = "Step-flow epitaxial growth on two-domain surfaces",
3570 journal = "Journal of Applied Physics",
3573 pages = "1423--1434",
3574 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3575 FILM GROWTH; SURFACE STRUCTURE",
3576 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3577 doi = "10.1063/1.360980",
3578 notes = "apb model",
3582 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3584 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3585 carbonization of silicon",
3588 journal = "Journal of Applied Physics",
3591 pages = "2070--2073",
3592 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3593 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3595 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3596 doi = "10.1063/1.360184",
3597 notes = "ssmbe of sic on si, lower temperatures",
3601 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3602 title = "Heterointerface Control and Epitaxial Growth of
3603 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3604 publisher = "WILEY-VCH Verlag",
3606 journal = "physica status solidi (b)",
3609 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3614 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3615 journal = "Journal of Crystal Growth",
3622 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3623 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3624 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3625 keywords = "Reflection high-energy electron diffraction (RHEED)",
3626 keywords = "Scanning electron microscopy (SEM)",
3627 keywords = "Silicon carbide",
3628 keywords = "Silicon",
3629 keywords = "Island growth",
3630 notes = "lower temperature, 550-700",
3633 @Article{hatayama95,
3634 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3635 on Si using hydrocarbon radicals by gas source
3636 molecular beam epitaxy",
3637 journal = "Journal of Crystal Growth",
3644 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3645 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3646 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3647 and Hiroyuki Matsunami",