2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Annalen der Physik",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
19 @Article{albe_sic_pot,
20 author = "Paul Erhart and Karsten Albe",
21 title = "Analytical potential for atomistic simulations of
22 silicon, carbon, and silicon carbide",
25 journal = "Phys. Rev. B",
31 notes = "alble reparametrization, analytical bond oder
33 keywords = "silicon; elemental semiconductors; carbon; silicon
34 compounds; wide band gap semiconductors; elasticity;
35 enthalpy; point defects; crystallographic shear; atomic
37 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
38 doi = "10.1103/PhysRevB.71.035211",
42 title = "The role of thermostats in modeling vapor phase
43 condensation of silicon nanoparticles",
44 journal = "Applied Surface Science",
49 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
51 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
52 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
53 author = "Paul Erhart and Karsten Albe",
57 title = "Modeling the metal-semiconductor interaction:
58 Analytical bond-order potential for platinum-carbon",
59 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
60 journal = "Phys. Rev. B",
67 doi = "10.1103/PhysRevB.65.195124",
68 publisher = "American Physical Society",
69 notes = "derivation of albe bond order formalism",
73 title = "Vibrational absorption of carbon in silicon",
74 journal = "Journal of Physics and Chemistry of Solids",
81 doi = "DOI: 10.1016/0022-3697(65)90166-6",
82 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
83 author = "R. C. Newman and J. B. Willis",
84 notes = "c impurity dissolved as substitutional c in si",
88 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
91 title = "Effect of Carbon on the Lattice Parameter of Silicon",
94 journal = "Journal of Applied Physics",
98 URL = "http://link.aip.org/link/?JAP/39/4365/1",
99 doi = "10.1063/1.1656977",
100 notes = "lattice contraction due to subst c",
104 title = "The solubility of carbon in pulled silicon crystals",
105 journal = "Journal of Physics and Chemistry of Solids",
108 pages = "1211--1219",
112 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
113 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
114 author = "A. R. Bean and R. C. Newman",
115 notes = "experimental solubility data of carbon in silicon",
119 author = "M. A. Capano and R. J. Trew",
120 title = "Silicon Carbide Electronic Materials and Devices",
121 journal = "MRS Bull.",
128 author = "G. R. Fisher and P. Barnes",
129 title = "Towards a unified view of polytypism in silicon
131 journal = "Philos. Mag. B",
135 notes = "sic polytypes",
139 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
140 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
141 Serre and A. Perez-Rodriguez",
142 title = "Synthesis of nano-sized Si{C} precipitates in Si by
143 simultaneous dual-beam implantation of {C}+ and Si+
145 journal = "Appl. Phys. A: Mater. Sci. Process.",
150 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
151 notes = "dual implantation, sic prec enhanced by vacancies,
152 precipitation by interstitial and substitutional
153 carbon, both mechanisms explained + refs",
157 title = "Carbon-mediated effects in silicon and in
158 silicon-related materials",
159 journal = "Materials Chemistry and Physics",
166 doi = "DOI: 10.1016/0254-0584(95)01673-I",
167 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
168 author = "W. Skorupa and R. A. Yankov",
169 notes = "review of silicon carbon compound",
173 author = "P. S. de Laplace",
174 title = "Th\'eorie analytique des probabilit\'es",
175 series = "Oeuvres Compl\`etes de Laplace",
177 publisher = "Gauthier-Villars",
181 @Article{mattoni2007,
182 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
183 title = "{Atomistic modeling of brittleness in covalent
185 journal = "Phys. Rev. B",
191 doi = "10.1103/PhysRevB.76.224103",
192 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
193 longe(r)-range-interactions, brittle propagation of
194 fracture, more available potentials, universal energy
195 relation (uer), minimum range model (mrm)",
199 title = "Comparative study of silicon empirical interatomic
201 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
202 journal = "Phys. Rev. B",
205 pages = "2250--2279",
209 doi = "10.1103/PhysRevB.46.2250",
210 publisher = "American Physical Society",
211 notes = "comparison of classical potentials for si",
215 title = "Stress relaxation in $a-Si$ induced by ion
217 author = "H. M. Urbassek M. Koster",
218 journal = "Phys. Rev. B",
221 pages = "11219--11224",
225 doi = "10.1103/PhysRevB.62.11219",
226 publisher = "American Physical Society",
227 notes = "virial derivation for 3-body tersoff potential",
230 @Article{breadmore99,
231 title = "Direct simulation of ion-beam-induced stressing and
232 amorphization of silicon",
233 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
234 journal = "Phys. Rev. B",
237 pages = "12610--12616",
241 doi = "10.1103/PhysRevB.60.12610",
242 publisher = "American Physical Society",
243 notes = "virial derivation for 3-body tersoff potential",
247 title = "First-Principles Calculation of Stress",
248 author = "O. H. Nielsen and Richard M. Martin",
249 journal = "Phys. Rev. Lett.",
256 doi = "10.1103/PhysRevLett.50.697",
257 publisher = "American Physical Society",
258 notes = "generalization of virial theorem",
262 title = "Quantum-mechanical theory of stress and force",
263 author = "O. H. Nielsen and Richard M. Martin",
264 journal = "Phys. Rev. B",
267 pages = "3780--3791",
271 doi = "10.1103/PhysRevB.32.3780",
272 publisher = "American Physical Society",
273 notes = "dft virial stress and forces",
277 author = "Henri Moissan",
278 title = "Nouvelles recherches sur la météorité de Cañon
280 journal = "Comptes rendus de l'Académie des Sciences",
287 author = "Y. S. Park",
288 title = "Si{C} Materials and Devices",
289 publisher = "Academic Press",
290 address = "San Diego",
295 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
296 Calvin H. Carter Jr. and D. Asbury",
297 title = "Si{C} Seeded Boule Growth",
298 journal = "Materials Science Forum",
302 notes = "modified lely process, micropipes",
306 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
307 Thermodynamical Properties of Lennard-Jones Molecules",
308 author = "Loup Verlet",
309 journal = "Phys. Rev.",
315 doi = "10.1103/PhysRev.159.98",
316 publisher = "American Physical Society",
317 notes = "velocity verlet integration algorithm equation of
321 @Article{berendsen84,
322 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
323 Gunsteren and A. DiNola and J. R. Haak",
325 title = "Molecular dynamics with coupling to an external bath",
328 journal = "J. Chem. Phys.",
331 pages = "3684--3690",
332 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
333 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
334 URL = "http://link.aip.org/link/?JCP/81/3684/1",
335 doi = "10.1063/1.448118",
336 notes = "berendsen thermostat barostat",
340 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
342 title = "Molecular dynamics determination of defect energetics
343 in beta -Si{C} using three representative empirical
345 journal = "Modell. Simul. Mater. Sci. Eng.",
349 URL = "http://stacks.iop.org/0965-0393/3/615",
350 notes = "comparison of tersoff, pearson and eam for defect
351 energetics in sic; (m)eam parameters for sic",
356 title = "Relationship between the embedded-atom method and
358 author = "Donald W. Brenner",
359 journal = "Phys. Rev. Lett.",
366 doi = "10.1103/PhysRevLett.63.1022",
367 publisher = "American Physical Society",
368 notes = "relation of tersoff and eam potential",
372 title = "Molecular-dynamics study of self-interstitials in
374 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
375 journal = "Phys. Rev. B",
378 pages = "9552--9558",
382 doi = "10.1103/PhysRevB.35.9552",
383 publisher = "American Physical Society",
384 notes = "selft-interstitials in silicon, stillinger-weber,
385 calculation of defect formation energy, defect
390 title = "Extended interstitials in silicon and germanium",
391 author = "H. R. Schober",
392 journal = "Phys. Rev. B",
395 pages = "13013--13015",
399 doi = "10.1103/PhysRevB.39.13013",
400 publisher = "American Physical Society",
401 notes = "stillinger-weber silicon 110 stable and metastable
402 dumbbell configuration",
406 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
407 Defect accumulation, topological features, and
409 author = "F. Gao and W. J. Weber",
410 journal = "Phys. Rev. B",
417 doi = "10.1103/PhysRevB.66.024106",
418 publisher = "American Physical Society",
419 notes = "sic intro, si cascade in 3c-sic, amorphization,
420 tersoff modified, pair correlation of amorphous sic, md
424 @Article{devanathan98,
425 title = "Computer simulation of a 10 ke{V} Si displacement
427 journal = "Nucl. Instrum. Methods Phys. Res. B",
433 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
434 author = "R. Devanathan and W. J. Weber and T. Diaz de la
436 notes = "modified tersoff short range potential, ab initio
440 @Article{devanathan98_2,
441 title = "Displacement threshold energies in [beta]-Si{C}",
442 journal = "J. Nucl. Mater.",
448 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
449 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
451 notes = "modified tersoff, ab initio, combined ab initio
455 @Article{kitabatake00,
456 title = "Si{C}/Si heteroepitaxial growth",
457 author = "M. Kitabatake",
458 journal = "Thin Solid Films",
463 notes = "md simulation, sic si heteroepitaxy, mbe",
467 title = "Intrinsic point defects in crystalline silicon:
468 Tight-binding molecular dynamics studies of
469 self-diffusion, interstitial-vacancy recombination, and
471 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
473 journal = "Phys. Rev. B",
476 pages = "14279--14289",
480 doi = "10.1103/PhysRevB.55.14279",
481 publisher = "American Physical Society",
482 notes = "si self interstitial, diffusion, tbmd",
486 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
489 title = "A kinetic Monte--Carlo study of the effective
490 diffusivity of the silicon self-interstitial in the
491 presence of carbon and boron",
494 journal = "J. Appl. Phys.",
497 pages = "1963--1967",
498 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
499 CARBON ADDITIONS; BORON ADDITIONS; elemental
500 semiconductors; self-diffusion",
501 URL = "http://link.aip.org/link/?JAP/84/1963/1",
502 doi = "10.1063/1.368328",
503 notes = "kinetic monte carlo of si self interstitial
508 title = "Barrier to Migration of the Silicon
510 author = "Y. Bar-Yam and J. D. Joannopoulos",
511 journal = "Phys. Rev. Lett.",
514 pages = "1129--1132",
518 doi = "10.1103/PhysRevLett.52.1129",
519 publisher = "American Physical Society",
520 notes = "si self-interstitial migration barrier",
523 @Article{bar-yam84_2,
524 title = "Electronic structure and total-energy migration
525 barriers of silicon self-interstitials",
526 author = "Y. Bar-Yam and J. D. Joannopoulos",
527 journal = "Phys. Rev. B",
530 pages = "1844--1852",
534 doi = "10.1103/PhysRevB.30.1844",
535 publisher = "American Physical Society",
539 title = "First-principles calculations of self-diffusion
540 constants in silicon",
541 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
542 and D. B. Laks and W. Andreoni and S. T. Pantelides",
543 journal = "Phys. Rev. Lett.",
546 pages = "2435--2438",
550 doi = "10.1103/PhysRevLett.70.2435",
551 publisher = "American Physical Society",
552 notes = "si self int diffusion by ab initio md, formation
553 entropy calculations",
557 title = "Defect migration in crystalline silicon",
558 author = "Lindsey J. Munro and David J. Wales",
559 journal = "Phys. Rev. B",
562 pages = "3969--3980",
566 doi = "10.1103/PhysRevB.59.3969",
567 publisher = "American Physical Society",
568 notes = "eigenvector following method, vacancy and interstiial
569 defect migration mechanisms",
573 title = "Tight-binding theory of native point defects in
575 author = "L. Colombo",
576 journal = "Annu. Rev. Mater. Res.",
581 doi = "10.1146/annurev.matsci.32.111601.103036",
582 publisher = "Annual Reviews",
583 notes = "si self interstitial, tbmd, virial stress",
586 @Article{al-mushadani03,
587 title = "Free-energy calculations of intrinsic point defects in
589 author = "O. K. Al-Mushadani and R. J. Needs",
590 journal = "Phys. Rev. B",
597 doi = "10.1103/PhysRevB.68.235205",
598 publisher = "American Physical Society",
599 notes = "formation energies of intrinisc point defects in
600 silicon, si self interstitials, free energy",
603 @Article{goedecker02,
604 title = "A Fourfold Coordinated Point Defect in Silicon",
605 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
606 journal = "Phys. Rev. Lett.",
613 doi = "10.1103/PhysRevLett.88.235501",
614 publisher = "American Physical Society",
615 notes = "first time ffcd, fourfold coordinated point defect in
620 title = "Ab initio molecular dynamics simulation of
621 self-interstitial diffusion in silicon",
622 author = "Beat Sahli and Wolfgang Fichtner",
623 journal = "Phys. Rev. B",
630 doi = "10.1103/PhysRevB.72.245210",
631 publisher = "American Physical Society",
632 notes = "si self int, diffusion, barrier height, voronoi
637 title = "Ab initio calculations of the interaction between
638 native point defects in silicon",
639 journal = "Mater. Sci. Eng., B",
644 note = "EMRS 2005, Symposium D - Materials Science and Device
645 Issues for Future Technologies",
647 doi = "DOI: 10.1016/j.mseb.2005.08.072",
648 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
649 author = "G. Hobler and G. Kresse",
650 notes = "vasp intrinsic si defect interaction study, capture
655 title = "Ab initio study of self-diffusion in silicon over a
656 wide temperature range: Point defect states and
657 migration mechanisms",
658 author = "Shangyi Ma and Shaoqing Wang",
659 journal = "Phys. Rev. B",
666 doi = "10.1103/PhysRevB.81.193203",
667 publisher = "American Physical Society",
668 notes = "si self interstitial diffusion + refs",
672 title = "Atomistic simulations on the thermal stability of the
673 antisite pair in 3{C}- and 4{H}-Si{C}",
674 author = "M. Posselt and F. Gao and W. J. Weber",
675 journal = "Phys. Rev. B",
682 doi = "10.1103/PhysRevB.73.125206",
683 publisher = "American Physical Society",
687 title = "Correlation between self-diffusion in Si and the
688 migration mechanisms of vacancies and
689 self-interstitials: An atomistic study",
690 author = "M. Posselt and F. Gao and H. Bracht",
691 journal = "Phys. Rev. B",
698 doi = "10.1103/PhysRevB.78.035208",
699 publisher = "American Physical Society",
700 notes = "si self-interstitial and vacancy diffusion, stillinger
705 title = "Ab initio and empirical-potential studies of defect
706 properties in $3{C}-Si{C}$",
707 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
709 journal = "Phys. Rev. B",
716 doi = "10.1103/PhysRevB.64.245208",
717 publisher = "American Physical Society",
718 notes = "defects in 3c-sic",
722 title = "Empirical potential approach for defect properties in
724 journal = "Nucl. Instrum. Methods Phys. Res. B",
731 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
732 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
733 author = "Fei Gao and William J. Weber",
734 keywords = "Empirical potential",
735 keywords = "Defect properties",
736 keywords = "Silicon carbide",
737 keywords = "Computer simulation",
738 notes = "sic potential, brenner type, like erhart/albe",
742 title = "Atomistic study of intrinsic defect migration in
744 author = "Fei Gao and William J. Weber and M. Posselt and V.
746 journal = "Phys. Rev. B",
753 doi = "10.1103/PhysRevB.69.245205",
754 publisher = "American Physical Society",
755 notes = "defect migration in sic",
759 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
762 title = "Ab Initio atomic simulations of antisite pair recovery
763 in cubic silicon carbide",
766 journal = "Appl. Phys. Lett.",
772 keywords = "ab initio calculations; silicon compounds; antisite
773 defects; wide band gap semiconductors; molecular
774 dynamics method; density functional theory;
775 electron-hole recombination; photoluminescence;
776 impurities; diffusion",
777 URL = "http://link.aip.org/link/?APL/90/221915/1",
778 doi = "10.1063/1.2743751",
781 @Article{mattoni2002,
782 title = "Self-interstitial trapping by carbon complexes in
783 crystalline silicon",
784 author = "A. Mattoni and F. Bernardini and L. Colombo",
785 journal = "Phys. Rev. B",
792 doi = "10.1103/PhysRevB.66.195214",
793 publisher = "American Physical Society",
794 notes = "c in c-si, diffusion, interstitial configuration +
795 links, interaction of carbon and silicon interstitials,
796 tersoff suitability",
800 title = "Calculations of Silicon Self-Interstitial Defects",
801 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
803 journal = "Phys. Rev. Lett.",
806 pages = "2351--2354",
810 doi = "10.1103/PhysRevLett.83.2351",
811 publisher = "American Physical Society",
812 notes = "nice images of the defects, si defect overview +
817 title = "Identification of the migration path of interstitial
819 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
820 journal = "Phys. Rev. B",
823 pages = "7439--7442",
827 doi = "10.1103/PhysRevB.50.7439",
828 publisher = "American Physical Society",
829 notes = "carbon interstitial migration path shown, 001 c-si
834 title = "Theory of carbon-carbon pairs in silicon",
835 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
836 journal = "Phys. Rev. B",
839 pages = "9845--9850",
843 doi = "10.1103/PhysRevB.58.9845",
844 publisher = "American Physical Society",
845 notes = "c_i c_s pair configuration, theoretical results",
849 title = "Bistable interstitial-carbon--substitutional-carbon
851 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
853 journal = "Phys. Rev. B",
856 pages = "5765--5783",
860 doi = "10.1103/PhysRevB.42.5765",
861 publisher = "American Physical Society",
862 notes = "c_i c_s pair configuration, experimental results",
866 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
867 Shifeng Lu and Xiang-Yang Liu",
869 title = "Ab initio modeling and experimental study of {C}--{B}
873 journal = "Appl. Phys. Lett.",
877 keywords = "silicon; boron; carbon; elemental semiconductors;
878 impurity-defect interactions; ab initio calculations;
879 secondary ion mass spectra; diffusion; interstitials",
880 URL = "http://link.aip.org/link/?APL/80/52/1",
881 doi = "10.1063/1.1430505",
882 notes = "c-c 100 split, lower as a and b states of capaz",
886 title = "Ab initio investigation of carbon-related defects in
888 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
890 journal = "Phys. Rev. B",
893 pages = "12554--12557",
897 doi = "10.1103/PhysRevB.47.12554",
898 publisher = "American Physical Society",
899 notes = "c interstitials in crystalline silicon",
903 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
905 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
906 Sokrates T. Pantelides",
907 journal = "Phys. Rev. Lett.",
910 pages = "1814--1817",
914 doi = "10.1103/PhysRevLett.52.1814",
915 publisher = "American Physical Society",
916 notes = "microscopic theory diffusion silicon dft migration
921 title = "Unified Approach for Molecular Dynamics and
922 Density-Functional Theory",
923 author = "R. Car and M. Parrinello",
924 journal = "Phys. Rev. Lett.",
927 pages = "2471--2474",
931 doi = "10.1103/PhysRevLett.55.2471",
932 publisher = "American Physical Society",
933 notes = "car parrinello method, dft and md",
937 title = "Short-range order, bulk moduli, and physical trends in
938 c-$Si1-x$$Cx$ alloys",
939 author = "P. C. Kelires",
940 journal = "Phys. Rev. B",
943 pages = "8784--8787",
947 doi = "10.1103/PhysRevB.55.8784",
948 publisher = "American Physical Society",
949 notes = "c strained si, montecarlo md, bulk moduli, next
954 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
955 Application to the $Si1-x-yGexCy$ System",
956 author = "P. C. Kelires",
957 journal = "Phys. Rev. Lett.",
960 pages = "1114--1117",
964 doi = "10.1103/PhysRevLett.75.1114",
965 publisher = "American Physical Society",
966 notes = "mc md, strain compensation in si ge by c insertion",
970 title = "Low temperature electron irradiation of silicon
972 journal = "Solid State Communications",
979 doi = "DOI: 10.1016/0038-1098(70)90074-8",
980 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
981 author = "A. R. Bean and R. C. Newman",
985 author = "F. Durand and J. Duby",
986 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
987 title = "Carbon solubility in solid and liquid silicon—{A}
988 review with reference to eutectic equilibrium",
989 journal = "Journal of Phase Equilibria",
990 publisher = "Springer New York",
992 keyword = "Chemistry and Materials Science",
996 URL = "http://dx.doi.org/10.1361/105497199770335956",
997 note = "10.1361/105497199770335956",
999 notes = "better c solubility limit in silicon",
1003 title = "{EPR} Observation of the Isolated Interstitial Carbon
1005 author = "G. D. Watkins and K. L. Brower",
1006 journal = "Phys. Rev. Lett.",
1009 pages = "1329--1332",
1013 doi = "10.1103/PhysRevLett.36.1329",
1014 publisher = "American Physical Society",
1015 notes = "epr observations of 100 interstitial carbon atom in
1020 title = "{EPR} identification of the single-acceptor state of
1021 interstitial carbon in silicon",
1022 author = "L. W. Song and G. D. Watkins",
1023 journal = "Phys. Rev. B",
1026 pages = "5759--5764",
1030 doi = "10.1103/PhysRevB.42.5759",
1031 publisher = "American Physical Society",
1032 notes = "carbon diffusion in silicon",
1036 author = "A K Tipping and R C Newman",
1037 title = "The diffusion coefficient of interstitial carbon in
1039 journal = "Semicond. Sci. Technol.",
1043 URL = "http://stacks.iop.org/0268-1242/2/315",
1045 notes = "diffusion coefficient of carbon interstitials in
1050 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1053 title = "Annealing behavior of Me{V} implanted carbon in
1057 journal = "Journal of Applied Physics",
1060 pages = "3815--3820",
1061 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1062 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1064 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1065 doi = "10.1063/1.354474",
1066 notes = "c at interstitial location for rt implantation in si",
1070 title = "Carbon incorporation into Si at high concentrations by
1071 ion implantation and solid phase epitaxy",
1072 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1073 Picraux and J. K. Watanabe and J. W. Mayer",
1074 journal = "J. Appl. Phys.",
1079 doi = "10.1063/1.360806",
1080 notes = "strained silicon, carbon supersaturation",
1083 @Article{laveant2002,
1084 title = "Epitaxy of carbon-rich silicon with {MBE}",
1085 journal = "Mater. Sci. Eng., B",
1091 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1092 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1093 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1095 notes = "low c in si, tensile stress to compensate compressive
1096 stress, avoid sic precipitation",
1100 title = "The formation of swirl defects in silicon by
1101 agglomeration of self-interstitials",
1102 journal = "Journal of Crystal Growth",
1109 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1110 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1111 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1112 notes = "b-swirl: si + c interstitial agglomerates, c-si
1117 title = "Microdefects in silicon and their relation to point
1119 journal = "Journal of Crystal Growth",
1126 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1127 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1128 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1129 notes = "swirl review",
1133 author = "P. Werner and S. Eichler and G. Mariani and R.
1134 K{\"{o}}gler and W. Skorupa",
1135 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1136 silicon by transmission electron microscopy",
1139 journal = "Appl. Phys. Lett.",
1143 keywords = "silicon; ion implantation; carbon; crystal defects;
1144 transmission electron microscopy; annealing; positron
1145 annihilation; secondary ion mass spectroscopy; buried
1146 layers; precipitation",
1147 URL = "http://link.aip.org/link/?APL/70/252/1",
1148 doi = "10.1063/1.118381",
1149 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1153 @InProceedings{werner96,
1154 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1156 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1157 International Conference on",
1158 title = "{TEM} investigation of {C}-Si defects in carbon
1165 doi = "10.1109/IIT.1996.586497",
1167 notes = "c-si agglomerates dumbbells",
1171 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1174 title = "Carbon diffusion in silicon",
1177 journal = "Appl. Phys. Lett.",
1180 pages = "2465--2467",
1181 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1182 secondary ion mass spectra; semiconductor epitaxial
1183 layers; annealing; impurity-defect interactions;
1184 impurity distribution",
1185 URL = "http://link.aip.org/link/?APL/73/2465/1",
1186 doi = "10.1063/1.122483",
1187 notes = "c diffusion in si, kick out mechnism",
1191 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1193 title = "Self-interstitial enhanced carbon diffusion in
1197 journal = "Applied Physics Letters",
1201 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1202 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1203 TEMPERATURE; IMPURITIES",
1204 URL = "http://link.aip.org/link/?APL/45/268/1",
1205 doi = "10.1063/1.95167",
1206 notes = "c diffusion due to si self-interstitials",
1210 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1213 title = "Characterization of SiGe/Si heterostructures formed by
1214 Ge[sup + ] and {C}[sup + ] implantation",
1217 journal = "Applied Physics Letters",
1220 pages = "2345--2347",
1221 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1222 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1223 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1224 EPITAXY; CARBON IONS; GERMANIUM IONS",
1225 URL = "http://link.aip.org/link/?APL/57/2345/1",
1226 doi = "10.1063/1.103888",
1230 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1231 Doyle and S. T. Picraux and J. W. Mayer",
1233 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1236 journal = "Applied Physics Letters",
1239 pages = "2786--2788",
1240 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1241 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1242 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1243 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1244 EPITAXY; AMORPHIZATION",
1245 URL = "http://link.aip.org/link/?APL/63/2786/1",
1246 doi = "10.1063/1.110334",
1250 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1251 Legoues and J. Angilello and F. Cardone",
1253 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1254 strained layer superlattices",
1257 journal = "Applied Physics Letters",
1260 pages = "2758--2760",
1261 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1262 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1263 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1264 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1265 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1266 URL = "http://link.aip.org/link/?APL/60/2758/1",
1267 doi = "10.1063/1.106868",
1271 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1272 Picraux and J. K. Watanabe and J. W. Mayer",
1274 title = "Precipitation and relaxation in strained Si[sub 1 -
1275 y]{C}[sub y]/Si heterostructures",
1278 journal = "J. Appl. Phys.",
1281 pages = "3656--3668",
1282 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1283 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1284 doi = "10.1063/1.357429",
1285 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1286 precipitation by substitutional carbon, coherent prec,
1287 coherent to incoherent transition strain vs interface
1292 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1295 title = "Investigation of the high temperature behavior of
1296 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1299 journal = "J. Appl. Phys.",
1302 pages = "1934--1937",
1303 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1304 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1305 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1306 TEMPERATURE RANGE 04001000 K",
1307 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1308 doi = "10.1063/1.358826",
1312 title = "Prospects for device implementation of wide band gap
1314 author = "J. H. Edgar",
1315 journal = "J. Mater. Res.",
1320 doi = "10.1557/JMR.1992.0235",
1321 notes = "properties wide band gap semiconductor, sic
1325 @Article{zirkelbach2007,
1326 title = "Monte Carlo simulation study of a selforganisation
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1328 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
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1342 @Article{zirkelbach2006,
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1346 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1348 journal = "Nucl. Instr. and Meth. B",
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1364 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1366 journal = "Comp. Mater. Sci.",
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1378 @Article{zirkelbach09,
1379 title = "Molecular dynamics simulation of defect formation and
1380 precipitation in heavily carbon doped silicon",
1381 journal = "Mater. Sci. Eng., B",
1386 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1387 Silicon Materials Research for Electronic and
1388 Photovoltaic Applications",
1390 doi = "DOI: 10.1016/j.mseb.2008.10.010",
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1395 keywords = "Carbon",
1396 keywords = "Silicon carbide",
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1406 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1418 @Article{zirkelbach11a,
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1426 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
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1430 @Article{zirkelbach11b,
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1442 author = "J. K. N. Lindner and A. Frohnwieser and B.
1443 Rauschenbach and B. Stritzker",
1444 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1446 journal = "MRS Online Proceedings Library",
1451 doi = "10.1557/PROC-354-171",
1452 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1453 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1454 notes = "first time ibs at moderate temperatures",
1458 title = "Formation of buried epitaxial silicon carbide layers
1459 in silicon by ion beam synthesis",
1460 journal = "Materials Chemistry and Physics",
1467 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1468 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1469 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1470 Götz and A. Frohnwieser and B. Rauschenbach and B.
1472 notes = "dose window",
1475 @Article{calcagno96,
1476 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1478 journal = "Nuclear Instruments and Methods in Physics Research
1479 Section B: Beam Interactions with Materials and Atoms",
1484 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1485 New Trends in Ion Beam Processing of Materials",
1487 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1488 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1489 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1490 Grimaldi and P. Musumeci",
1491 notes = "dose window, graphitic bonds",
1495 title = "Mechanisms of Si{C} Formation in the Ion Beam
1496 Synthesis of 3{C}-Si{C} Layers in Silicon",
1497 journal = "Materials Science Forum",
1502 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1503 URL = "http://www.scientific.net/MSF.264-268.215",
1504 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1505 notes = "intermediate temperature for sharp interface + good
1510 title = "Controlling the density distribution of Si{C}
1511 nanocrystals for the ion beam synthesis of buried Si{C}
1513 journal = "Nucl. Instrum. Methods Phys. Res. B",
1520 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1521 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1522 author = "J. K. N. Lindner and B. Stritzker",
1523 notes = "two-step implantation process",
1526 @Article{lindner99_2,
1527 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1529 journal = "Nucl. Instrum. Methods Phys. Res. B",
1535 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1536 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1537 author = "J. K. N. Lindner and B. Stritzker",
1538 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1542 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1543 Basic physical processes",
1544 journal = "Nucl. Instrum. Methods Phys. Res. B",
1551 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1552 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1553 author = "J{\"{o}}rg K. N. Lindner",
1557 title = "High-dose carbon implantations into silicon:
1558 fundamental studies for new technological tricks",
1559 author = "J. K. N. Lindner",
1560 journal = "Appl. Phys. A",
1564 doi = "10.1007/s00339-002-2062-8",
1565 notes = "ibs, burried sic layers",
1569 title = "On the balance between ion beam induced nanoparticle
1570 formation and displacive precipitate resolution in the
1572 journal = "Mater. Sci. Eng., C",
1577 note = "Current Trends in Nanoscience - from Materials to
1580 doi = "DOI: 10.1016/j.msec.2005.09.099",
1581 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1582 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1584 notes = "c int diffusion barrier",
1588 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1589 application in buffer layer for Ga{N} epitaxial
1591 journal = "Applied Surface Science",
1596 note = "APHYS'03 Special Issue",
1598 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1599 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1600 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1601 and S. Nishio and K. Yasuda and Y. Ishigami",
1602 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1605 @Article{yamamoto04,
1606 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1607 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1608 implantation into Si(1 1 1) substrate",
1609 journal = "Journal of Crystal Growth",
1614 note = "Proceedings of the 11th Biennial (US) Workshop on
1615 Organometallic Vapor Phase Epitaxy (OMVPE)",
1617 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1618 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1619 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1620 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1621 notes = "gan on 3c-sic",
1625 title = "Substrates for gallium nitride epitaxy",
1626 journal = "Materials Science and Engineering: R: Reports",
1633 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1634 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1635 author = "L. Liu and J. H. Edgar",
1636 notes = "gan substrates",
1639 @Article{takeuchi91,
1640 title = "Growth of single crystalline Ga{N} film on Si
1641 substrate using 3{C}-Si{C} as an intermediate layer",
1642 journal = "Journal of Crystal Growth",
1649 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1650 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1651 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1652 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1653 notes = "gan on 3c-sic (first time?)",
1657 author = "B. J. Alder and T. E. Wainwright",
1658 title = "Phase Transition for a Hard Sphere System",
1661 journal = "J. Chem. Phys.",
1664 pages = "1208--1209",
1665 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1666 doi = "10.1063/1.1743957",
1670 author = "B. J. Alder and T. E. Wainwright",
1671 title = "Studies in Molecular Dynamics. {I}. General Method",
1674 journal = "J. Chem. Phys.",
1678 URL = "http://link.aip.org/link/?JCP/31/459/1",
1679 doi = "10.1063/1.1730376",
1682 @Article{horsfield96,
1683 title = "Bond-order potentials: Theory and implementation",
1684 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1685 D. G. Pettifor and M. Aoki",
1686 journal = "Phys. Rev. B",
1689 pages = "12694--12712",
1693 doi = "10.1103/PhysRevB.53.12694",
1694 publisher = "American Physical Society",
1698 title = "Empirical chemical pseudopotential theory of molecular
1699 and metallic bonding",
1700 author = "G. C. Abell",
1701 journal = "Phys. Rev. B",
1704 pages = "6184--6196",
1708 doi = "10.1103/PhysRevB.31.6184",
1709 publisher = "American Physical Society",
1712 @Article{tersoff_si1,
1713 title = "New empirical model for the structural properties of
1715 author = "J. Tersoff",
1716 journal = "Phys. Rev. Lett.",
1723 doi = "10.1103/PhysRevLett.56.632",
1724 publisher = "American Physical Society",
1728 title = "Development of a many-body Tersoff-type potential for
1730 author = "Brian W. Dodson",
1731 journal = "Phys. Rev. B",
1734 pages = "2795--2798",
1738 doi = "10.1103/PhysRevB.35.2795",
1739 publisher = "American Physical Society",
1742 @Article{tersoff_si2,
1743 title = "New empirical approach for the structure and energy of
1745 author = "J. Tersoff",
1746 journal = "Phys. Rev. B",
1749 pages = "6991--7000",
1753 doi = "10.1103/PhysRevB.37.6991",
1754 publisher = "American Physical Society",
1757 @Article{tersoff_si3,
1758 title = "Empirical interatomic potential for silicon with
1759 improved elastic properties",
1760 author = "J. Tersoff",
1761 journal = "Phys. Rev. B",
1764 pages = "9902--9905",
1768 doi = "10.1103/PhysRevB.38.9902",
1769 publisher = "American Physical Society",
1773 title = "Empirical Interatomic Potential for Carbon, with
1774 Applications to Amorphous Carbon",
1775 author = "J. Tersoff",
1776 journal = "Phys. Rev. Lett.",
1779 pages = "2879--2882",
1783 doi = "10.1103/PhysRevLett.61.2879",
1784 publisher = "American Physical Society",
1788 title = "Modeling solid-state chemistry: Interatomic potentials
1789 for multicomponent systems",
1790 author = "J. Tersoff",
1791 journal = "Phys. Rev. B",
1794 pages = "5566--5568",
1798 doi = "10.1103/PhysRevB.39.5566",
1799 publisher = "American Physical Society",
1803 title = "Carbon defects and defect reactions in silicon",
1804 author = "J. Tersoff",
1805 journal = "Phys. Rev. Lett.",
1808 pages = "1757--1760",
1812 doi = "10.1103/PhysRevLett.64.1757",
1813 publisher = "American Physical Society",
1817 title = "Point defects and dopant diffusion in silicon",
1818 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1819 journal = "Rev. Mod. Phys.",
1826 doi = "10.1103/RevModPhys.61.289",
1827 publisher = "American Physical Society",
1831 title = "Silicon carbide: synthesis and processing",
1832 journal = "Nucl. Instrum. Methods Phys. Res. B",
1837 note = "Radiation Effects in Insulators",
1839 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1840 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1841 author = "W. Wesch",
1845 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1846 Palmour and J. A. Edmond",
1847 journal = "Proceedings of the IEEE",
1848 title = "Thin film deposition and microelectronic and
1849 optoelectronic device fabrication and characterization
1850 in monocrystalline alpha and beta silicon carbide",
1856 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1857 diode;SiC;dry etching;electrical
1858 contacts;etching;impurity incorporation;optoelectronic
1859 device fabrication;solid-state devices;surface
1860 chemistry;Schottky effect;Schottky gate field effect
1861 transistors;Schottky-barrier
1862 diodes;etching;heterojunction bipolar
1863 transistors;insulated gate field effect
1864 transistors;light emitting diodes;semiconductor
1865 materials;semiconductor thin films;silicon compounds;",
1866 doi = "10.1109/5.90132",
1868 notes = "sic growth methods",
1872 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1873 Lin and B. Sverdlov and M. Burns",
1875 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1876 ZnSe-based semiconductor device technologies",
1879 journal = "J. Appl. Phys.",
1882 pages = "1363--1398",
1883 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1884 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1885 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1887 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1888 doi = "10.1063/1.358463",
1889 notes = "sic intro, properties",
1893 author = "Noch Unbekannt",
1894 title = "How to find references",
1895 journal = "Journal of Applied References",
1902 title = "Atomistic simulation of thermomechanical properties of
1904 author = "Meijie Tang and Sidney Yip",
1905 journal = "Phys. Rev. B",
1908 pages = "15150--15159",
1911 doi = "10.1103/PhysRevB.52.15150",
1912 notes = "modified tersoff, scale cutoff with volume, promising
1913 tersoff reparametrization",
1914 publisher = "American Physical Society",
1918 title = "Silicon carbide as a new {MEMS} technology",
1919 journal = "Sensors and Actuators A: Physical",
1925 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1926 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1927 author = "Pasqualina M. Sarro",
1929 keywords = "Silicon carbide",
1930 keywords = "Micromachining",
1931 keywords = "Mechanical stress",
1935 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1936 semiconductor for high-temperature applications: {A}
1938 journal = "Solid-State Electronics",
1941 pages = "1409--1422",
1944 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1945 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1946 author = "J. B. Casady and R. W. Johnson",
1947 notes = "sic intro",
1950 @Article{giancarli98,
1951 title = "Design requirements for Si{C}/Si{C} composites
1952 structural material in fusion power reactor blankets",
1953 journal = "Fusion Engineering and Design",
1959 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1960 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1961 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1962 Marois and N. B. Morley and J. F. Salavy",
1966 title = "Electrical and optical characterization of Si{C}",
1967 journal = "Physica B: Condensed Matter",
1973 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1974 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1975 author = "G. Pensl and W. J. Choyke",
1979 title = "Investigation of growth processes of ingots of silicon
1980 carbide single crystals",
1981 journal = "J. Cryst. Growth",
1986 notes = "modified lely process",
1988 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1989 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1990 author = "Yu. M. Tairov and V. F. Tsvetkov",
1994 title = "General principles of growing large-size single
1995 crystals of various silicon carbide polytypes",
1996 journal = "Journal of Crystal Growth",
2003 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2004 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2005 author = "Yu.M. Tairov and V. F. Tsvetkov",
2009 title = "Si{C} boule growth by sublimation vapor transport",
2010 journal = "Journal of Crystal Growth",
2017 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2018 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2019 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2020 R. H. Hopkins and W. J. Choyke",
2024 title = "Growth of large Si{C} single crystals",
2025 journal = "Journal of Crystal Growth",
2032 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2033 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2034 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2035 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2040 title = "Control of polytype formation by surface energy
2041 effects during the growth of Si{C} monocrystals by the
2042 sublimation method",
2043 journal = "Journal of Crystal Growth",
2050 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2051 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2052 author = "R. A. Stein and P. Lanig",
2053 notes = "6h and 4h, sublimation technique",
2057 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2060 title = "Production of large-area single-crystal wafers of
2061 cubic Si{C} for semiconductor devices",
2064 journal = "Appl. Phys. Lett.",
2068 keywords = "silicon carbides; layers; chemical vapor deposition;
2070 URL = "http://link.aip.org/link/?APL/42/460/1",
2071 doi = "10.1063/1.93970",
2072 notes = "cvd of 3c-sic on si, sic buffer layer",
2076 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2077 and Hiroyuki Matsunami",
2079 title = "Epitaxial growth and electric characteristics of cubic
2083 journal = "J. Appl. Phys.",
2086 pages = "4889--4893",
2087 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2088 doi = "10.1063/1.338355",
2089 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2094 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2096 title = "Growth and Characterization of Cubic Si{C}
2097 Single-Crystal Films on Si",
2100 journal = "Journal of The Electrochemical Society",
2103 pages = "1558--1565",
2104 keywords = "semiconductor materials; silicon compounds; carbon
2105 compounds; crystal morphology; electron mobility",
2106 URL = "http://link.aip.org/link/?JES/134/1558/1",
2107 doi = "10.1149/1.2100708",
2108 notes = "blue light emitting diodes (led)",
2111 @Article{powell87_2,
2112 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2113 C. M. Chorey and T. T. Cheng and P. Pirouz",
2115 title = "Improved beta-Si{C} heteroepitaxial films using
2116 off-axis Si substrates",
2119 journal = "Applied Physics Letters",
2123 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2124 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2125 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2126 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2127 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2128 URL = "http://link.aip.org/link/?APL/51/823/1",
2129 doi = "10.1063/1.98824",
2130 notes = "improved sic on off-axis si substrates, reduced apbs",
2134 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2135 journal = "Journal of Crystal Growth",
2142 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2143 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2144 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2146 notes = "step-controlled epitaxy model",
2150 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2151 and Hiroyuki Matsunami",
2152 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2156 journal = "J. Appl. Phys.",
2160 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2161 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2163 URL = "http://link.aip.org/link/?JAP/73/726/1",
2164 doi = "10.1063/1.353329",
2165 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2168 @Article{powell90_2,
2169 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2170 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2171 Yoganathan and J. Yang and P. Pirouz",
2173 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2174 vicinal (0001) 6{H}-Si{C} wafers",
2177 journal = "Applied Physics Letters",
2180 pages = "1442--1444",
2181 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2182 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2183 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2184 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2185 URL = "http://link.aip.org/link/?APL/56/1442/1",
2186 doi = "10.1063/1.102492",
2187 notes = "cvd of 6h-sic on 6h-sic",
2191 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2193 title = "Chemical vapor deposition and characterization of
2194 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2198 journal = "Journal of Applied Physics",
2201 pages = "2672--2679",
2202 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2203 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2204 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2205 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2206 PHASE EPITAXY; CRYSTAL ORIENTATION",
2207 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2208 doi = "10.1063/1.341608",
2212 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2213 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2214 Yoganathan and J. Yang and P. Pirouz",
2216 title = "Growth of improved quality 3{C}-Si{C} films on
2217 6{H}-Si{C} substrates",
2220 journal = "Appl. Phys. Lett.",
2223 pages = "1353--1355",
2224 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2225 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2226 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2228 URL = "http://link.aip.org/link/?APL/56/1353/1",
2229 doi = "10.1063/1.102512",
2230 notes = "cvd of 3c-sic on 6h-sic",
2234 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2235 Rozgonyi and K. L. More",
2237 title = "An examination of double positioning boundaries and
2238 interface misfit in beta-Si{C} films on alpha-Si{C}
2242 journal = "Journal of Applied Physics",
2245 pages = "2645--2650",
2246 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2247 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2248 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2249 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2250 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2251 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2252 doi = "10.1063/1.341004",
2256 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2257 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2258 and W. J. Choyke and L. Clemen and M. Yoganathan",
2260 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2261 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2264 journal = "Applied Physics Letters",
2268 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2269 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2270 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2271 URL = "http://link.aip.org/link/?APL/59/333/1",
2272 doi = "10.1063/1.105587",
2276 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2277 Thokala and M. J. Loboda",
2279 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2280 films on 6{H}-Si{C} by chemical vapor deposition from
2284 journal = "J. Appl. Phys.",
2287 pages = "1271--1273",
2288 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2289 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2291 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2292 doi = "10.1063/1.360368",
2293 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2297 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2298 properties of its p-n junction",
2299 journal = "Journal of Crystal Growth",
2306 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2307 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2308 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2310 notes = "first time ssmbe of 3c-sic on 6h-sic",
2314 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2315 [alpha]-Si{C}(0001) at low temperatures by solid-source
2316 molecular beam epitaxy",
2317 journal = "J. Cryst. Growth",
2323 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2325 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2326 Schr{\"{o}}ter and W. Richter",
2327 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2330 @Article{fissel95_apl,
2331 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2333 title = "Low-temperature growth of Si{C} thin films on Si and
2334 6{H}--Si{C} by solid-source molecular beam epitaxy",
2337 journal = "Appl. Phys. Lett.",
2340 pages = "3182--3184",
2341 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2343 URL = "http://link.aip.org/link/?APL/66/3182/1",
2344 doi = "10.1063/1.113716",
2345 notes = "mbe 3c-sic on si and 6h-sic",
2349 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2350 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2352 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2353 migration enhanced epitaxy controlled to an atomic
2354 level using surface superstructures",
2357 journal = "Applied Physics Letters",
2360 pages = "1204--1206",
2361 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2362 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2364 URL = "http://link.aip.org/link/?APL/68/1204/1",
2365 doi = "10.1063/1.115969",
2366 notes = "ss mbe sic, superstructure, reconstruction",
2370 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2371 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2372 C. M. Bertoni and A. Catellani",
2373 journal = "Phys. Rev. Lett.",
2380 doi = "10.1103/PhysRevLett.91.136101",
2381 publisher = "American Physical Society",
2382 notes = "dft calculations mbe sic growth",
2386 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2388 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2392 journal = "Appl. Phys. Lett.",
2396 URL = "http://link.aip.org/link/?APL/18/509/1",
2397 doi = "10.1063/1.1653516",
2398 notes = "first time sic by ibs, follow cites for precipitation
2403 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2404 and E. V. Lubopytova",
2405 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2406 by ion implantation",
2407 publisher = "Taylor \& Francis",
2409 journal = "Radiation Effects",
2413 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2414 notes = "3c-sic for different temperatures, amorphous, poly,
2415 single crystalline",
2418 @Article{akimchenko80,
2419 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2420 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2421 title = "Structure and optical properties of silicon implanted
2422 by high doses of 70 and 310 ke{V} carbon ions",
2423 publisher = "Taylor \& Francis",
2425 journal = "Radiation Effects",
2429 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2430 notes = "3c-sic nucleation by thermal spikes",
2434 title = "Structure and annealing properties of silicon carbide
2435 thin layers formed by implantation of carbon ions in
2437 journal = "Thin Solid Films",
2444 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2445 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2446 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2451 title = "Characteristics of the synthesis of [beta]-Si{C} by
2452 the implantation of carbon ions into silicon",
2453 journal = "Thin Solid Films",
2460 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2461 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2462 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2467 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2468 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2469 Chater and J. A. Iulner and J. Davis",
2470 title = "Formation mechanisms and structures of insulating
2471 compounds formed in silicon by ion beam synthesis",
2472 publisher = "Taylor \& Francis",
2474 journal = "Radiation Effects",
2478 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2479 notes = "ibs, comparison with sio and sin, higher temp or time,
2480 no c redistribution",
2484 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2485 J. Davis and G. E. Celler",
2487 title = "Formation of buried layers of beta-Si{C} using ion
2488 beam synthesis and incoherent lamp annealing",
2491 journal = "Appl. Phys. Lett.",
2494 pages = "2242--2244",
2495 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2496 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2497 URL = "http://link.aip.org/link/?APL/51/2242/1",
2498 doi = "10.1063/1.98953",
2499 notes = "nice tem images, sic by ibs",
2503 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2504 and M. Olivier and A. M. Papon and G. Rolland",
2506 title = "High-temperature ion beam synthesis of cubic Si{C}",
2509 journal = "Journal of Applied Physics",
2512 pages = "2908--2912",
2513 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2514 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2515 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2516 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2517 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2518 REACTIONS; MONOCRYSTALS",
2519 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2520 doi = "10.1063/1.346092",
2521 notes = "triple energy implantation to overcome high annealing
2526 author = "R. I. Scace and G. A. Slack",
2528 title = "Solubility of Carbon in Silicon and Germanium",
2531 journal = "J. Chem. Phys.",
2534 pages = "1551--1555",
2535 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2536 doi = "10.1063/1.1730236",
2537 notes = "solubility of c in c-si, si-c phase diagram",
2541 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2543 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2544 Laboratories Eindhoven Netherlands Eindhoven
2546 title = "Boron implantations in silicon: {A} comparison of
2547 charge carrier and boron concentration profiles",
2548 journal = "Applied Physics A: Materials Science \& Processing",
2549 publisher = "Springer Berlin / Heidelberg",
2551 keyword = "Physics and Astronomy",
2555 URL = "http://dx.doi.org/10.1007/BF00884267",
2556 note = "10.1007/BF00884267",
2558 notes = "first time ted (only for boron?)",
2562 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2565 title = "Rapid annealing and the anomalous diffusion of ion
2566 implanted boron into silicon",
2569 journal = "Applied Physics Letters",
2573 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2574 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2575 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2576 URL = "http://link.aip.org/link/?APL/50/416/1",
2577 doi = "10.1063/1.98160",
2578 notes = "ted of boron in si",
2582 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2585 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2586 time, and matrix dependence of atomic and electrical
2590 journal = "Journal of Applied Physics",
2593 pages = "6191--6198",
2594 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2595 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2596 CRYSTALS; AMORPHIZATION",
2597 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2598 doi = "10.1063/1.346910",
2599 notes = "ted of boron in si",
2603 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2604 F. W. Saris and W. Vandervorst",
2606 title = "Role of {C} and {B} clusters in transient diffusion of
2610 journal = "Appl. Phys. Lett.",
2613 pages = "1150--1152",
2614 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2615 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2617 URL = "http://link.aip.org/link/?APL/68/1150/1",
2618 doi = "10.1063/1.115706",
2619 notes = "suppression of transient enhanced diffusion (ted)",
2623 title = "Implantation and transient boron diffusion: the role
2624 of the silicon self-interstitial",
2625 journal = "Nucl. Instrum. Methods Phys. Res. B",
2630 note = "Selected Papers of the Tenth International Conference
2631 on Ion Implantation Technology (IIT '94)",
2633 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2634 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2635 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2640 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2641 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2642 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2645 title = "Physical mechanisms of transient enhanced dopant
2646 diffusion in ion-implanted silicon",
2649 journal = "J. Appl. Phys.",
2652 pages = "6031--6050",
2653 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2654 doi = "10.1063/1.364452",
2655 notes = "ted, transient enhanced diffusion, c silicon trap",
2659 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2661 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2662 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2665 journal = "Appl. Phys. Lett.",
2669 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2670 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2671 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2673 URL = "http://link.aip.org/link/?APL/64/324/1",
2674 doi = "10.1063/1.111195",
2675 notes = "beta sic nano crystals in si, mbe, annealing",
2679 author = "Richard A. Soref",
2681 title = "Optical band gap of the ternary semiconductor Si[sub 1
2682 - x - y]Ge[sub x]{C}[sub y]",
2685 journal = "J. Appl. Phys.",
2688 pages = "2470--2472",
2689 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2690 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2692 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2693 doi = "10.1063/1.349403",
2694 notes = "band gap of strained si by c",
2698 author = "E Kasper",
2699 title = "Superlattices of group {IV} elements, a new
2700 possibility to produce direct band gap material",
2701 journal = "Physica Scripta",
2704 URL = "http://stacks.iop.org/1402-4896/T35/232",
2706 notes = "superlattices, convert indirect band gap into a
2711 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2714 title = "Growth and strain compensation effects in the ternary
2715 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2718 journal = "Applied Physics Letters",
2721 pages = "3033--3035",
2722 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2723 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2724 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2725 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2727 URL = "http://link.aip.org/link/?APL/60/3033/1",
2728 doi = "10.1063/1.106774",
2732 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2735 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2739 journal = "J. Vac. Sci. Technol. B",
2742 pages = "1064--1068",
2743 location = "Ottawa (Canada)",
2744 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2745 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2746 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2747 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2748 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2749 doi = "10.1116/1.587008",
2750 notes = "substitutional c in si by mbe",
2753 @Article{powell93_2,
2754 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2755 of the ternary system",
2756 journal = "Journal of Crystal Growth",
2763 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2764 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2765 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2770 author = "H. J. Osten",
2771 title = "Modification of Growth Modes in Lattice-Mismatched
2772 Epitaxial Systems: Si/Ge",
2773 journal = "physica status solidi (a)",
2776 publisher = "WILEY-VCH Verlag",
2778 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2779 doi = "10.1002/pssa.2211450203",
2784 @Article{dietrich94,
2785 title = "Lattice distortion in a strain-compensated
2786 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2787 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2788 Methfessel and P. Zaumseil",
2789 journal = "Phys. Rev. B",
2792 pages = "17185--17190",
2796 doi = "10.1103/PhysRevB.49.17185",
2797 publisher = "American Physical Society",
2801 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2803 title = "Growth of an inverse tetragonal distorted SiGe layer
2804 on Si(001) by adding small amounts of carbon",
2807 journal = "Applied Physics Letters",
2810 pages = "3440--3442",
2811 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2812 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2813 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2815 URL = "http://link.aip.org/link/?APL/64/3440/1",
2816 doi = "10.1063/1.111235",
2817 notes = "inversely strained / distorted heterostructure",
2821 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2822 LeGoues and J. C. Tsang and F. Cardone",
2824 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2825 molecular beam epitaxy",
2828 journal = "Applied Physics Letters",
2832 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2833 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2834 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2835 FILM GROWTH; MICROSTRUCTURE",
2836 URL = "http://link.aip.org/link/?APL/60/356/1",
2837 doi = "10.1063/1.106655",
2841 author = "H. J. Osten and J. Griesche and S. Scalese",
2843 title = "Substitutional carbon incorporation in epitaxial
2844 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2845 molecular beam epitaxy",
2848 journal = "Appl. Phys. Lett.",
2852 keywords = "molecular beam epitaxial growth; semiconductor growth;
2853 wide band gap semiconductors; interstitials; silicon
2855 URL = "http://link.aip.org/link/?APL/74/836/1",
2856 doi = "10.1063/1.123384",
2857 notes = "substitutional c in si by mbe",
2861 author = "M. Born and R. Oppenheimer",
2862 title = "Zur Quantentheorie der Molekeln",
2863 journal = "Annalen der Physik",
2866 publisher = "WILEY-VCH Verlag",
2868 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2869 doi = "10.1002/andp.19273892002",
2874 @Article{hohenberg64,
2875 title = "Inhomogeneous Electron Gas",
2876 author = "P. Hohenberg and W. Kohn",
2877 journal = "Phys. Rev.",
2880 pages = "B864--B871",
2884 doi = "10.1103/PhysRev.136.B864",
2885 publisher = "American Physical Society",
2886 notes = "density functional theory, dft",
2890 title = "The calculation of atomic fields",
2891 author = "L. H. Thomas",
2892 journal = "Mathematical Proceedings of the Cambridge
2893 Philosophical Society",
2897 doi = "10.1017/S0305004100011683",
2902 author = "E. Fermi",
2903 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
2911 title = "The Wave Mechanics of an Atom with a Non-Coulomb
2912 Central Field. Part {I}. Theory and Methods",
2913 author = "D. R. Hartree",
2914 journal = "Mathematical Proceedings of the Cambridge
2915 Philosophical Society",
2919 doi = "10.1017/S0305004100011919",
2923 title = {The Theory of Complex Spectra},
2924 author = {Slater, J. C.},
2925 journal = {Phys. Rev.},
2928 pages = {1293--1322},
2932 doi = {10.1103/PhysRev.34.1293},
2933 publisher = {American Physical Society}
2937 title = "Self-Consistent Equations Including Exchange and
2938 Correlation Effects",
2939 author = "W. Kohn and L. J. Sham",
2940 journal = "Phys. Rev.",
2943 pages = "A1133--A1138",
2947 doi = "10.1103/PhysRev.140.A1133",
2948 publisher = "American Physical Society",
2949 notes = "dft, exchange and correlation",
2953 title = "Nobel Lecture: Electronic structure of matter---wave
2954 functions and density functionals",
2956 journal = "Rev. Mod. Phys.",
2959 pages = "1253--1266",
2963 doi = "10.1103/RevModPhys.71.1253",
2964 publisher = "American Physical Society",
2968 title = "Electron densities in search of Hamiltonians",
2969 author = "Mel Levy",
2970 journal = "Phys. Rev. A",
2973 pages = "1200--1208",
2977 doi = "10.1103/PhysRevA.26.1200",
2978 publisher = "American Physical Society",
2982 title = "Strain-stabilized highly concentrated pseudomorphic
2983 $Si1-x$$Cx$ layers in Si",
2984 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2986 journal = "Phys. Rev. Lett.",
2989 pages = "3578--3581",
2993 doi = "10.1103/PhysRevLett.72.3578",
2994 publisher = "American Physical Society",
2995 notes = "high c concentration in si, heterostructure, strained
3000 title = "Phosphorous Doping of Strain-Induced
3001 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3002 by Low-Temperature Chemical Vapor Deposition",
3003 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3004 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3005 journal = "Japanese Journal of Applied Physics",
3007 number = "Part 1, No. 4B",
3008 pages = "2472--2475",
3011 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3012 doi = "10.1143/JJAP.41.2472",
3013 publisher = "The Japan Society of Applied Physics",
3014 notes = "experimental charge carrier mobility in strained si",
3018 title = "Electron Transport Model for Strained Silicon-Carbon
3020 author = "Shu-Tong Chang and Chung-Yi Lin",
3021 journal = "Japanese J. Appl. Phys.",
3024 pages = "2257--2262",
3027 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3028 doi = "10.1143/JJAP.44.2257",
3029 publisher = "The Japan Society of Applied Physics",
3030 notes = "enhance of electron mobility in strained si",
3033 @Article{kissinger94,
3034 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3037 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3038 y] layers on Si(001)",
3041 journal = "Applied Physics Letters",
3044 pages = "3356--3358",
3045 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3046 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3047 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3048 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3049 URL = "http://link.aip.org/link/?APL/65/3356/1",
3050 doi = "10.1063/1.112390",
3051 notes = "strained si influence on optical properties",
3055 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3058 title = "Substitutional versus interstitial carbon
3059 incorporation during pseudomorphic growth of Si[sub 1 -
3060 y]{C}[sub y] on Si(001)",
3063 journal = "Journal of Applied Physics",
3066 pages = "6711--6715",
3067 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3068 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3070 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3071 doi = "10.1063/1.363797",
3072 notes = "mbe substitutional vs interstitial c incorporation",
3076 author = "H. J. Osten and P. Gaworzewski",
3078 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3079 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3083 journal = "J. Appl. Phys.",
3086 pages = "4977--4981",
3087 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3088 semiconductors; semiconductor epitaxial layers; carrier
3089 density; Hall mobility; interstitials; defect states",
3090 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3091 doi = "10.1063/1.366364",
3092 notes = "charge transport in strained si",
3096 title = "Carbon-mediated aggregation of self-interstitials in
3097 silicon: {A} large-scale molecular dynamics study",
3098 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3099 journal = "Phys. Rev. B",
3106 doi = "10.1103/PhysRevB.69.155214",
3107 publisher = "American Physical Society",
3108 notes = "simulation using promising tersoff reparametrization",
3112 title = "Event-Based Relaxation of Continuous Disordered
3114 author = "G. T. Barkema and Normand Mousseau",
3115 journal = "Phys. Rev. Lett.",
3118 pages = "4358--4361",
3122 doi = "10.1103/PhysRevLett.77.4358",
3123 publisher = "American Physical Society",
3124 notes = "activation relaxation technique, art, speed up slow
3129 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3130 Minoukadeh and F. Willaime",
3132 title = "Some improvements of the activation-relaxation
3133 technique method for finding transition pathways on
3134 potential energy surfaces",
3137 journal = "J. Chem. Phys.",
3143 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3144 surfaces; vacancies (crystal)",
3145 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3146 doi = "10.1063/1.3088532",
3147 notes = "improvements to art, refs for methods to find
3148 transition pathways",
3151 @Article{parrinello81,
3152 author = "M. Parrinello and A. Rahman",
3154 title = "Polymorphic transitions in single crystals: {A} new
3155 molecular dynamics method",
3158 journal = "J. Appl. Phys.",
3161 pages = "7182--7190",
3162 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3163 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3164 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3165 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3166 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3168 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3169 doi = "10.1063/1.328693",
3172 @Article{stillinger85,
3173 title = "Computer simulation of local order in condensed phases
3175 author = "Frank H. Stillinger and Thomas A. Weber",
3176 journal = "Phys. Rev. B",
3179 pages = "5262--5271",
3183 doi = "10.1103/PhysRevB.31.5262",
3184 publisher = "American Physical Society",
3188 title = "Empirical potential for hydrocarbons for use in
3189 simulating the chemical vapor deposition of diamond
3191 author = "Donald W. Brenner",
3192 journal = "Phys. Rev. B",
3195 pages = "9458--9471",
3199 doi = "10.1103/PhysRevB.42.9458",
3200 publisher = "American Physical Society",
3201 notes = "brenner hydro carbons",
3205 title = "Modeling of Covalent Bonding in Solids by Inversion of
3206 Cohesive Energy Curves",
3207 author = "Martin Z. Bazant and Efthimios Kaxiras",
3208 journal = "Phys. Rev. Lett.",
3211 pages = "4370--4373",
3215 doi = "10.1103/PhysRevLett.77.4370",
3216 publisher = "American Physical Society",
3217 notes = "first si edip",
3221 title = "Environment-dependent interatomic potential for bulk
3223 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3225 journal = "Phys. Rev. B",
3228 pages = "8542--8552",
3232 doi = "10.1103/PhysRevB.56.8542",
3233 publisher = "American Physical Society",
3234 notes = "second si edip",
3238 title = "Interatomic potential for silicon defects and
3240 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3241 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3242 journal = "Phys. Rev. B",
3245 pages = "2539--2550",
3249 doi = "10.1103/PhysRevB.58.2539",
3250 publisher = "American Physical Society",
3251 notes = "latest si edip, good dislocation explanation",
3255 title = "{PARCAS} molecular dynamics code",
3256 author = "K. Nordlund",
3261 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3263 author = "Arthur F. Voter",
3264 journal = "Phys. Rev. Lett.",
3267 pages = "3908--3911",
3271 doi = "10.1103/PhysRevLett.78.3908",
3272 publisher = "American Physical Society",
3273 notes = "hyperdynamics, accelerated md",
3277 author = "Arthur F. Voter",
3279 title = "A method for accelerating the molecular dynamics
3280 simulation of infrequent events",
3283 journal = "J. Chem. Phys.",
3286 pages = "4665--4677",
3287 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3288 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3289 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3290 energy functions; surface diffusion; reaction kinetics
3291 theory; potential energy surfaces",
3292 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3293 doi = "10.1063/1.473503",
3294 notes = "improved hyperdynamics md",
3297 @Article{sorensen2000,
3298 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3300 title = "Temperature-accelerated dynamics for simulation of
3304 journal = "J. Chem. Phys.",
3307 pages = "9599--9606",
3308 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3309 MOLECULAR DYNAMICS METHOD; surface diffusion",
3310 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3311 doi = "10.1063/1.481576",
3312 notes = "temperature accelerated dynamics, tad",
3316 title = "Parallel replica method for dynamics of infrequent
3318 author = "Arthur F. Voter",
3319 journal = "Phys. Rev. B",
3322 pages = "R13985--R13988",
3326 doi = "10.1103/PhysRevB.57.R13985",
3327 publisher = "American Physical Society",
3328 notes = "parallel replica method, accelerated md",
3332 author = "Xiongwu Wu and Shaomeng Wang",
3334 title = "Enhancing systematic motion in molecular dynamics
3338 journal = "J. Chem. Phys.",
3341 pages = "9401--9410",
3342 keywords = "molecular dynamics method; argon; Lennard-Jones
3343 potential; crystallisation; liquid theory",
3344 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3345 doi = "10.1063/1.478948",
3346 notes = "self guided md, sgmd, accelerated md, enhancing
3350 @Article{choudhary05,
3351 author = "Devashish Choudhary and Paulette Clancy",
3353 title = "Application of accelerated molecular dynamics schemes
3354 to the production of amorphous silicon",
3357 journal = "J. Chem. Phys.",
3363 keywords = "molecular dynamics method; silicon; glass structure;
3364 amorphous semiconductors",
3365 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3366 doi = "10.1063/1.1878733",
3367 notes = "explanation of sgmd and hyper md, applied to amorphous
3372 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3374 title = "Carbon precipitation in silicon: Why is it so
3378 journal = "Appl. Phys. Lett.",
3381 pages = "3336--3338",
3382 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3383 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3385 URL = "http://link.aip.org/link/?APL/62/3336/1",
3386 doi = "10.1063/1.109063",
3387 notes = "interfacial energy of cubic sic and si, si self
3388 interstitials necessary for precipitation, volume
3389 decrease, high interface energy",
3392 @Article{chaussende08,
3393 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3394 journal = "J. Cryst. Growth",
3399 note = "Proceedings of the E-MRS Conference, Symposium G -
3400 Substrates of Wide Bandgap Materials",
3402 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3403 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3404 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3405 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3406 and A. Andreadou and E. K. Polychroniadis and C.
3407 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3408 notes = "3c-sic crystal growth, sic fabrication + links,
3412 @Article{chaussende07,
3413 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3414 title = "Status of Si{C} bulk growth processes",
3415 journal = "Journal of Physics D: Applied Physics",
3419 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3421 notes = "review of sic single crystal growth methods, process
3426 title = "Forces in Molecules",
3427 author = "R. P. Feynman",
3428 journal = "Phys. Rev.",
3435 doi = "10.1103/PhysRev.56.340",
3436 publisher = "American Physical Society",
3437 notes = "hellmann feynman forces",
3441 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3442 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3443 their Contrasting Properties",
3444 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3446 journal = "Phys. Rev. Lett.",
3453 doi = "10.1103/PhysRevLett.84.943",
3454 publisher = "American Physical Society",
3455 notes = "si sio2 and sic sio2 interface",
3458 @Article{djurabekova08,
3459 title = "Atomistic simulation of the interface structure of Si
3460 nanocrystals embedded in amorphous silica",
3461 author = "Flyura Djurabekova and Kai Nordlund",
3462 journal = "Phys. Rev. B",
3469 doi = "10.1103/PhysRevB.77.115325",
3470 publisher = "American Physical Society",
3471 notes = "nc-si in sio2, interface energy, nc construction,
3472 angular distribution, coordination",
3476 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3477 W. Liang and J. Zou",
3479 title = "Nature of interfacial defects and their roles in
3480 strain relaxation at highly lattice mismatched
3481 3{C}-Si{C}/Si (001) interface",
3484 journal = "J. Appl. Phys.",
3490 keywords = "anelastic relaxation; crystal structure; dislocations;
3491 elemental semiconductors; semiconductor growth;
3492 semiconductor thin films; silicon; silicon compounds;
3493 stacking faults; wide band gap semiconductors",
3494 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3495 doi = "10.1063/1.3234380",
3496 notes = "sic/si interface, follow refs, tem image
3497 deconvolution, dislocation defects",
3500 @Article{kitabatake93,
3501 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3504 title = "Simulations and experiments of Si{C} heteroepitaxial
3505 growth on Si(001) surface",
3508 journal = "J. Appl. Phys.",
3511 pages = "4438--4445",
3512 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3513 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3514 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3515 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3516 doi = "10.1063/1.354385",
3517 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3521 @Article{kitabatake97,
3522 author = "Makoto Kitabatake",
3523 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3524 Heteroepitaxial Growth",
3525 publisher = "WILEY-VCH Verlag",
3527 journal = "physica status solidi (b)",
3530 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3531 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3532 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3536 title = "Strain relaxation and thermal stability of the
3537 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3539 journal = "Thin Solid Films",
3546 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3547 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3548 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3549 keywords = "Strain relaxation",
3550 keywords = "Interfaces",
3551 keywords = "Thermal stability",
3552 keywords = "Molecular dynamics",
3553 notes = "tersoff sic/si interface study",
3557 title = "Ab initio Study of Misfit Dislocations at the
3558 $Si{C}/Si(001)$ Interface",
3559 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3561 journal = "Phys. Rev. Lett.",
3568 doi = "10.1103/PhysRevLett.89.156101",
3569 publisher = "American Physical Society",
3570 notes = "sic/si interface study",
3573 @Article{pizzagalli03,
3574 title = "Theoretical investigations of a highly mismatched
3575 interface: Si{C}/Si(001)",
3576 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3578 journal = "Phys. Rev. B",
3585 doi = "10.1103/PhysRevB.68.195302",
3586 publisher = "American Physical Society",
3587 notes = "tersoff md and ab initio sic/si interface study",
3591 title = "Atomic configurations of dislocation core and twin
3592 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3593 electron microscopy",
3594 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3595 H. Zheng and J. W. Liang",
3596 journal = "Phys. Rev. B",
3603 doi = "10.1103/PhysRevB.75.184103",
3604 publisher = "American Physical Society",
3605 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3609 @Article{hornstra58,
3610 title = "Dislocations in the diamond lattice",
3611 journal = "Journal of Physics and Chemistry of Solids",
3618 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3619 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3620 author = "J. Hornstra",
3621 notes = "dislocations in diamond lattice",
3625 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3626 Ion `Hot' Implantation",
3627 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3628 Hirao and Naoki Arai and Tomio Izumi",
3629 journal = "Japanese J. Appl. Phys.",
3631 number = "Part 1, No. 2A",
3635 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3636 doi = "10.1143/JJAP.31.343",
3637 publisher = "The Japan Society of Applied Physics",
3638 notes = "c-c bonds in c implanted si, hot implantation
3639 efficiency, c-c hard to break by thermal annealing",
3642 @Article{eichhorn99,
3643 author = "F. Eichhorn and N. Schell and W. Matz and R.
3646 title = "Strain and Si{C} particle formation in silicon
3647 implanted with carbon ions of medium fluence studied by
3648 synchrotron x-ray diffraction",
3651 journal = "J. Appl. Phys.",
3654 pages = "4184--4187",
3655 keywords = "silicon; carbon; elemental semiconductors; chemical
3656 interdiffusion; ion implantation; X-ray diffraction;
3657 precipitation; semiconductor doping",
3658 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3659 doi = "10.1063/1.371344",
3660 notes = "sic conversion by ibs, detected substitutional carbon,
3661 expansion of si lattice",
3664 @Article{eichhorn02,
3665 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3666 Metzger and W. Matz and R. K{\"{o}}gler",
3668 title = "Structural relation between Si and Si{C} formed by
3669 carbon ion implantation",
3672 journal = "J. Appl. Phys.",
3675 pages = "1287--1292",
3676 keywords = "silicon compounds; wide band gap semiconductors; ion
3677 implantation; annealing; X-ray scattering; transmission
3678 electron microscopy",
3679 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3680 doi = "10.1063/1.1428105",
3681 notes = "3c-sic alignement to si host in ibs depending on
3682 temperature, might explain c into c sub trafo",
3686 author = "G Lucas and M Bertolus and L Pizzagalli",
3687 title = "An environment-dependent interatomic potential for
3688 silicon carbide: calculation of bulk properties,
3689 high-pressure phases, point and extended defects, and
3690 amorphous structures",
3691 journal = "J. Phys.: Condens. Matter",
3695 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3701 author = "J Godet and L Pizzagalli and S Brochard and P
3703 title = "Comparison between classical potentials and ab initio
3704 methods for silicon under large shear",
3705 journal = "J. Phys.: Condens. Matter",
3709 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3711 notes = "comparison of empirical potentials, stillinger weber,
3712 edip, tersoff, ab initio",
3715 @Article{moriguchi98,
3716 title = "Verification of Tersoff's Potential for Static
3717 Structural Analysis of Solids of Group-{IV} Elements",
3718 author = "Koji Moriguchi and Akira Shintani",
3719 journal = "Japanese J. Appl. Phys.",
3721 number = "Part 1, No. 2",
3725 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3726 doi = "10.1143/JJAP.37.414",
3727 publisher = "The Japan Society of Applied Physics",
3728 notes = "tersoff stringent test",
3731 @Article{mazzarolo01,
3732 title = "Low-energy recoils in crystalline silicon: Quantum
3734 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3735 Lulli and Eros Albertazzi",
3736 journal = "Phys. Rev. B",
3743 doi = "10.1103/PhysRevB.63.195207",
3744 publisher = "American Physical Society",
3747 @Article{holmstroem08,
3748 title = "Threshold defect production in silicon determined by
3749 density functional theory molecular dynamics
3751 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3752 journal = "Phys. Rev. B",
3759 doi = "10.1103/PhysRevB.78.045202",
3760 publisher = "American Physical Society",
3761 notes = "threshold displacement comparison empirical and ab
3765 @Article{nordlund97,
3766 title = "Repulsive interatomic potentials calculated using
3767 Hartree-Fock and density-functional theory methods",
3768 journal = "Nucl. Instrum. Methods Phys. Res. B",
3775 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3776 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3777 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3778 notes = "repulsive ab initio potential",
3782 title = "Efficiency of ab-initio total energy calculations for
3783 metals and semiconductors using a plane-wave basis
3785 journal = "Comput. Mater. Sci.",
3792 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3793 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3794 author = "G. Kresse and J. Furthm{\"{u}}ller",
3799 title = "Projector augmented-wave method",
3800 author = "P. E. Bl{\"o}chl",
3801 journal = "Phys. Rev. B",
3804 pages = "17953--17979",
3808 doi = "10.1103/PhysRevB.50.17953",
3809 publisher = "American Physical Society",
3810 notes = "paw method",
3814 title = "Norm-Conserving Pseudopotentials",
3815 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3816 journal = "Phys. Rev. Lett.",
3819 pages = "1494--1497",
3823 doi = "10.1103/PhysRevLett.43.1494",
3824 publisher = "American Physical Society",
3825 notes = "norm-conserving pseudopotentials",
3828 @Article{vanderbilt90,
3829 title = "Soft self-consistent pseudopotentials in a generalized
3830 eigenvalue formalism",
3831 author = "David Vanderbilt",
3832 journal = "Phys. Rev. B",
3835 pages = "7892--7895",
3839 doi = "10.1103/PhysRevB.41.7892",
3840 publisher = "American Physical Society",
3841 notes = "vasp pseudopotentials",
3845 title = "Accurate and simple density functional for the
3846 electronic exchange energy: Generalized gradient
3848 author = "John P. Perdew and Yue Wang",
3849 journal = "Phys. Rev. B",
3852 pages = "8800--8802",
3856 doi = "10.1103/PhysRevB.33.8800",
3857 publisher = "American Physical Society",
3858 notes = "rapid communication gga",
3862 title = "Generalized gradient approximations for exchange and
3863 correlation: {A} look backward and forward",
3864 journal = "Physica B: Condensed Matter",
3871 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3872 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3873 author = "John P. Perdew",
3874 notes = "gga overview",
3878 title = "Atoms, molecules, solids, and surfaces: Applications
3879 of the generalized gradient approximation for exchange
3881 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3882 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3883 and Carlos Fiolhais",
3884 journal = "Phys. Rev. B",
3887 pages = "6671--6687",
3891 doi = "10.1103/PhysRevB.46.6671",
3892 publisher = "American Physical Society",
3893 notes = "gga pw91 (as in vasp)",
3896 @Article{baldereschi73,
3897 title = "Mean-Value Point in the Brillouin Zone",
3898 author = "A. Baldereschi",
3899 journal = "Phys. Rev. B",
3902 pages = "5212--5215",
3906 doi = "10.1103/PhysRevB.7.5212",
3907 publisher = "American Physical Society",
3908 notes = "mean value k point",
3912 title = "Ab initio pseudopotential calculations of dopant
3914 journal = "Comput. Mater. Sci.",
3921 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3922 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3923 author = "Jing Zhu",
3924 keywords = "TED (transient enhanced diffusion)",
3925 keywords = "Boron dopant",
3926 keywords = "Carbon dopant",
3927 keywords = "Defect",
3928 keywords = "ab initio pseudopotential method",
3929 keywords = "Impurity cluster",
3930 notes = "binding of c to si interstitial, c in si defects",
3934 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3936 title = "Si{C} buried layer formation by ion beam synthesis at
3940 journal = "Appl. Phys. Lett.",
3943 pages = "2646--2648",
3944 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3945 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3946 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3947 ELECTRON MICROSCOPY",
3948 URL = "http://link.aip.org/link/?APL/66/2646/1",
3949 doi = "10.1063/1.113112",
3950 notes = "precipitation mechanism by substitutional carbon, si
3951 self interstitials react with further implanted c",
3955 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3956 Kolodzey and A. Hairie",
3958 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3962 journal = "J. Appl. Phys.",
3965 pages = "4631--4633",
3966 keywords = "silicon compounds; precipitation; localised modes;
3967 semiconductor epitaxial layers; infrared spectra;
3968 Fourier transform spectra; thermal stability;
3970 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3971 doi = "10.1063/1.368703",
3972 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3976 author = "R Jones and B J Coomer and P R Briddon",
3977 title = "Quantum mechanical modelling of defects in
3979 journal = "J. Phys.: Condens. Matter",
3983 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3985 notes = "ab inito dft intro, vibrational modes, c defect in
3990 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3991 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3992 J. E. Greene and S. G. Bishop",
3994 title = "Carbon incorporation pathways and lattice sites in
3995 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3996 molecular-beam epitaxy",
3999 journal = "J. Appl. Phys.",
4002 pages = "5716--5727",
4003 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4004 doi = "10.1063/1.1465122",
4005 notes = "c substitutional incorporation pathway, dft and expt",
4009 title = "Dynamic properties of interstitial carbon and
4010 carbon-carbon pair defects in silicon",
4011 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4013 journal = "Phys. Rev. B",
4016 pages = "2188--2194",
4020 doi = "10.1103/PhysRevB.55.2188",
4021 publisher = "American Physical Society",
4022 notes = "ab initio c in si and di-carbon defect, no formation
4023 energies, different migration barriers and paths",
4027 title = "Interstitial carbon and the carbon-carbon pair in
4028 silicon: Semiempirical electronic-structure
4030 author = "Matthew J. Burnard and Gary G. DeLeo",
4031 journal = "Phys. Rev. B",
4034 pages = "10217--10225",
4038 doi = "10.1103/PhysRevB.47.10217",
4039 publisher = "American Physical Society",
4040 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4041 carbon defect, formation energies",
4045 title = "Electronic structure of interstitial carbon in
4047 author = "Morgan Besson and Gary G. DeLeo",
4048 journal = "Phys. Rev. B",
4051 pages = "4028--4033",
4055 doi = "10.1103/PhysRevB.43.4028",
4056 publisher = "American Physical Society",
4060 title = "Review of atomistic simulations of surface diffusion
4061 and growth on semiconductors",
4062 journal = "Comput. Mater. Sci.",
4067 note = "Proceedings of the Workshop on Virtual Molecular Beam
4070 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4071 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4072 author = "Efthimios Kaxiras",
4073 notes = "might contain c 100 db formation energy, overview md,
4074 tight binding, first principles",
4077 @Article{kaukonen98,
4078 title = "Effect of {N} and {B} doping on the growth of {CVD}
4080 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4082 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4083 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4085 journal = "Phys. Rev. B",
4088 pages = "9965--9970",
4092 doi = "10.1103/PhysRevB.57.9965",
4093 publisher = "American Physical Society",
4094 notes = "constrained conjugate gradient relaxation technique
4099 title = "Correlation between the antisite pair and the ${DI}$
4101 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4102 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4104 journal = "Phys. Rev. B",
4111 doi = "10.1103/PhysRevB.67.155203",
4112 publisher = "American Physical Society",
4116 title = "Production and recovery of defects in Si{C} after
4117 irradiation and deformation",
4118 journal = "J. Nucl. Mater.",
4121 pages = "1803--1808",
4125 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4126 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4127 author = "J. Chen and P. Jung and H. Klein",
4131 title = "Accumulation, dynamic annealing and thermal recovery
4132 of ion-beam-induced disorder in silicon carbide",
4133 journal = "Nucl. Instrum. Methods Phys. Res. B",
4140 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4141 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4142 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4145 @Article{bockstedte03,
4146 title = "Ab initio study of the migration of intrinsic defects
4148 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4150 journal = "Phys. Rev. B",
4157 doi = "10.1103/PhysRevB.68.205201",
4158 publisher = "American Physical Society",
4159 notes = "defect migration in sic",
4163 title = "Theoretical study of vacancy diffusion and
4164 vacancy-assisted clustering of antisites in Si{C}",
4165 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4167 journal = "Phys. Rev. B",
4174 doi = "10.1103/PhysRevB.68.155208",
4175 publisher = "American Physical Society",
4179 journal = "Telegrafiya i Telefoniya bez Provodov",
4183 author = "O. V. Lossev",
4187 title = "Luminous carborundum detector and detection effect and
4188 oscillations with crystals",
4189 journal = "Philosophical Magazine Series 7",
4192 pages = "1024--1044",
4194 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4195 author = "O. V. Lossev",
4199 journal = "Physik. Zeitschr.",
4203 author = "O. V. Lossev",
4207 journal = "Physik. Zeitschr.",
4211 author = "O. V. Lossev",
4215 journal = "Physik. Zeitschr.",
4219 author = "O. V. Lossev",
4223 title = "A note on carborundum",
4224 journal = "Electrical World",
4228 author = "H. J. Round",
4231 @Article{vashishath08,
4232 title = "Recent trends in silicon carbide device research",
4233 journal = "Mj. Int. J. Sci. Tech.",
4238 author = "Munish Vashishath and Ashoke K. Chatterjee",
4239 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4240 notes = "sic polytype electronic properties",
4244 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4246 title = "Growth and Properties of beta-Si{C} Single Crystals",
4249 journal = "Journal of Applied Physics",
4253 URL = "http://link.aip.org/link/?JAP/37/333/1",
4254 doi = "10.1063/1.1707837",
4255 notes = "sic melt growth",
4259 author = "A. E. van Arkel and J. H. de Boer",
4260 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4262 publisher = "WILEY-VCH Verlag GmbH",
4264 journal = "Z. Anorg. Chem.",
4267 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4268 doi = "10.1002/zaac.19251480133",
4269 notes = "van arkel apparatus",
4273 author = "K. Moers",
4275 journal = "Z. Anorg. Chem.",
4278 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4283 author = "J. T. Kendall",
4284 title = "Electronic Conduction in Silicon Carbide",
4287 journal = "The Journal of Chemical Physics",
4291 URL = "http://link.aip.org/link/?JCP/21/821/1",
4292 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4297 author = "J. A. Lely",
4299 journal = "Ber. Deut. Keram. Ges.",
4302 notes = "lely sublimation growth process",
4305 @Article{knippenberg63,
4306 author = "W. F. Knippenberg",
4308 journal = "Philips Res. Repts.",
4311 notes = "acheson process",
4314 @Article{hoffmann82,
4315 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4318 title = "Silicon carbide blue light emitting diodes with
4319 improved external quantum efficiency",
4322 journal = "Journal of Applied Physics",
4325 pages = "6962--6967",
4326 keywords = "light emitting diodes; silicon carbides; quantum
4327 efficiency; visible radiation; experimental data;
4328 epitaxy; fabrication; medium temperature; layers;
4329 aluminium; nitrogen; substrates; pn junctions;
4330 electroluminescence; spectra; current density;
4332 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4333 doi = "10.1063/1.330041",
4334 notes = "blue led, sublimation process",
4338 author = "Philip Neudeck",
4339 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4340 Road 44135 Cleveland OH",
4341 title = "Progress in silicon carbide semiconductor electronics
4343 journal = "Journal of Electronic Materials",
4344 publisher = "Springer Boston",
4346 keyword = "Chemistry and Materials Science",
4350 URL = "http://dx.doi.org/10.1007/BF02659688",
4351 note = "10.1007/BF02659688",
4353 notes = "sic data, advantages of 3c sic",
4356 @Article{bhatnagar93,
4357 author = "M. Bhatnagar and B. J. Baliga",
4358 journal = "Electron Devices, IEEE Transactions on",
4359 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4366 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4367 rectifiers;Si;SiC;breakdown voltages;drift region
4368 properties;output characteristics;power MOSFETs;power
4369 semiconductor devices;switching characteristics;thermal
4370 analysis;Schottky-barrier diodes;electric breakdown of
4371 solids;insulated gate field effect transistors;power
4372 transistors;semiconductor materials;silicon;silicon
4373 compounds;solid-state rectifiers;thermal analysis;",
4374 doi = "10.1109/16.199372",
4376 notes = "comparison 3c 6h sic and si devices",
4380 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4381 A. Powell and C. S. Salupo and L. G. Matus",
4382 journal = "Electron Devices, IEEE Transactions on",
4383 title = "Electrical properties of epitaxial 3{C}- and
4384 6{H}-Si{C} p-n junction diodes produced side-by-side on
4385 6{H}-Si{C} substrates",
4391 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4392 C;6H-SiC layers;6H-SiC substrates;CVD
4393 process;SiC;chemical vapor deposition;doping;electrical
4394 properties;epitaxial layers;light
4395 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4396 diodes;polytype;rectification characteristics;reverse
4397 leakage current;reverse voltages;temperature;leakage
4398 currents;power electronics;semiconductor
4399 diodes;semiconductor epitaxial layers;semiconductor
4400 growth;semiconductor materials;silicon
4401 compounds;solid-state rectifiers;substrates;vapour
4402 phase epitaxial growth;",
4403 doi = "10.1109/16.285038",
4405 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4410 author = "N. Schulze and D. L. Barrett and G. Pensl",
4412 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4413 single crystals by physical vapor transport",
4416 journal = "Applied Physics Letters",
4419 pages = "1632--1634",
4420 keywords = "silicon compounds; semiconductor materials;
4421 semiconductor growth; crystal growth from vapour;
4422 photoluminescence; Hall mobility",
4423 URL = "http://link.aip.org/link/?APL/72/1632/1",
4424 doi = "10.1063/1.121136",
4425 notes = "micropipe free 6h-sic pvt growth",
4429 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4431 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4434 journal = "Applied Physics Letters",
4438 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4439 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4440 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4441 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4443 URL = "http://link.aip.org/link/?APL/50/221/1",
4444 doi = "10.1063/1.97667",
4445 notes = "apb 3c-sic heteroepitaxy on si",
4448 @Article{shibahara86,
4449 title = "Surface morphology of cubic Si{C}(100) grown on
4450 Si(100) by chemical vapor deposition",
4451 journal = "Journal of Crystal Growth",
4458 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4459 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4460 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4462 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4465 @Article{desjardins96,
4466 author = "P. Desjardins and J. E. Greene",
4468 title = "Step-flow epitaxial growth on two-domain surfaces",
4471 journal = "Journal of Applied Physics",
4474 pages = "1423--1434",
4475 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4476 FILM GROWTH; SURFACE STRUCTURE",
4477 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4478 doi = "10.1063/1.360980",
4479 notes = "apb model",
4483 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4485 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4486 carbonization of silicon",
4489 journal = "Journal of Applied Physics",
4492 pages = "2070--2073",
4493 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4494 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4496 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4497 doi = "10.1063/1.360184",
4498 notes = "ssmbe of sic on si, lower temperatures",
4502 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4503 {MBE} using surface superstructure",
4504 journal = "Journal of Crystal Growth",
4511 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4512 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4513 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4514 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4515 notes = "gas source mbe of 3c-sic on 6h-sic",
4518 @Article{yoshinobu92,
4519 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4520 and Takashi Fuyuki and Hiroyuki Matsunami",
4522 title = "Lattice-matched epitaxial growth of single crystalline
4523 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4524 molecular beam epitaxy",
4527 journal = "Applied Physics Letters",
4531 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4532 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4533 INTERFACE STRUCTURE",
4534 URL = "http://link.aip.org/link/?APL/60/824/1",
4535 doi = "10.1063/1.107430",
4536 notes = "gas source mbe of 3c-sic on 6h-sic",
4539 @Article{yoshinobu90,
4540 title = "Atomic level control in gas source {MBE} growth of
4542 journal = "Journal of Crystal Growth",
4549 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4550 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4551 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4552 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4553 notes = "gas source mbe of 3c-sic on 3c-sic",
4557 title = "Atomic layer epitaxy controlled by surface
4558 superstructures in Si{C}",
4559 journal = "Thin Solid Films",
4566 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4567 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4568 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4570 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4575 title = "Microscopic mechanisms of accurate layer-by-layer
4576 growth of [beta]-Si{C}",
4577 journal = "Thin Solid Films",
4584 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4585 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4586 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4587 and S. Misawa and E. Sakuma and S. Yoshida",
4588 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4593 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4595 title = "Effects of gas flow ratio on silicon carbide thin film
4596 growth mode and polytype formation during gas-source
4597 molecular beam epitaxy",
4600 journal = "Applied Physics Letters",
4603 pages = "2851--2853",
4604 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4605 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4606 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4608 URL = "http://link.aip.org/link/?APL/65/2851/1",
4609 doi = "10.1063/1.112513",
4610 notes = "gas source mbe of 6h-sic on 6h-sic",
4614 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4615 title = "Heterointerface Control and Epitaxial Growth of
4616 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4617 publisher = "WILEY-VCH Verlag",
4619 journal = "physica status solidi (b)",
4622 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4627 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4628 journal = "Journal of Crystal Growth",
4635 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4636 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4637 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4638 keywords = "Reflection high-energy electron diffraction (RHEED)",
4639 keywords = "Scanning electron microscopy (SEM)",
4640 keywords = "Silicon carbide",
4641 keywords = "Silicon",
4642 keywords = "Island growth",
4643 notes = "lower temperature, 550-700",
4646 @Article{hatayama95,
4647 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4648 on Si using hydrocarbon radicals by gas source
4649 molecular beam epitaxy",
4650 journal = "Journal of Crystal Growth",
4657 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4658 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4659 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4660 and Hiroyuki Matsunami",
4664 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4665 title = "The Preference of Silicon Carbide for Growth in the
4666 Metastable Cubic Form",
4667 journal = "Journal of the American Ceramic Society",
4670 publisher = "Blackwell Publishing Ltd",
4672 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4673 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4674 pages = "2630--2633",
4675 keywords = "silicon carbide, crystal growth, crystal structure,
4676 calculations, stability",
4678 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4679 polytype dft calculation refs",
4682 @Article{allendorf91,
4683 title = "The adsorption of {H}-atoms on polycrystalline
4684 [beta]-silicon carbide",
4685 journal = "Surface Science",
4692 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4693 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4694 author = "Mark D. Allendorf and Duane A. Outka",
4695 notes = "h adsorption on 3c-sic",
4698 @Article{eaglesham93,
4699 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4700 D. P. Adams and S. M. Yalisove",
4702 title = "Effect of {H} on Si molecular-beam epitaxy",
4705 journal = "Journal of Applied Physics",
4708 pages = "6615--6618",
4709 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4710 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4711 DIFFUSION; ADSORPTION",
4712 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4713 doi = "10.1063/1.355101",
4714 notes = "h incorporation on si surface, lower surface
4719 author = "Ronald C. Newman",
4720 title = "Carbon in Crystalline Silicon",
4721 journal = "MRS Online Proceedings Library",
4726 doi = "10.1557/PROC-59-403",
4727 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4728 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4732 title = "The diffusivity of carbon in silicon",
4733 journal = "Journal of Physics and Chemistry of Solids",
4740 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4741 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4742 author = "R. C. Newman and J. Wakefield",
4743 notes = "diffusivity of substitutional c in si",
4747 author = "U. Gösele",
4748 title = "The Role of Carbon and Point Defects in Silicon",
4749 journal = "MRS Online Proceedings Library",
4754 doi = "10.1557/PROC-59-419",
4755 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4756 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4759 @Article{mukashev82,
4760 title = "Defects in Carbon-Implanted Silicon",
4761 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4762 Fukuoka and Haruo Saito",
4763 journal = "Japanese Journal of Applied Physics",
4765 number = "Part 1, No. 2",
4769 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4770 doi = "10.1143/JJAP.21.399",
4771 publisher = "The Japan Society of Applied Physics",
4775 title = "Convergence of supercell calculations for point
4776 defects in semiconductors: Vacancy in silicon",
4777 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4779 journal = "Phys. Rev. B",
4782 pages = "1318--1325",
4786 doi = "10.1103/PhysRevB.58.1318",
4787 publisher = "American Physical Society",
4788 notes = "convergence k point supercell size, vacancy in
4793 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4794 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4795 K{\"{o}}gler and W. Skorupa",
4797 title = "Spectroscopic characterization of phases formed by
4798 high-dose carbon ion implantation in silicon",
4801 journal = "Journal of Applied Physics",
4804 pages = "2978--2984",
4805 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4806 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4807 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4808 DEPENDENCE; PRECIPITATES; ANNEALING",
4809 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4810 doi = "10.1063/1.358714",
4813 @Article{romano-rodriguez96,
4814 title = "Detailed analysis of [beta]-Si{C} formation by high
4815 dose carbon ion implantation in silicon",
4816 journal = "Materials Science and Engineering B",
4821 note = "European Materials Research Society 1995 Spring
4822 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4823 Oxygen in Silicon and in Other Elemental
4826 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4827 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4828 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4829 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4831 keywords = "Silicon",
4832 keywords = "Ion implantation",
4833 notes = "incoherent 3c-sic precipitate",