2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philosophical Magazine Part B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Applied Physics A: Materials Science \& Processing",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 author = "P. S. de Laplace",
97 title = "Th\'eorie analytique des probabilit\'es",
98 series = "Oeuvres Compl\`etes de Laplace",
100 publisher = "Gauthier-Villars",
104 @Article{mattoni2007,
105 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
106 title = "{Atomistic modeling of brittleness in covalent
108 journal = "Phys. Rev. B",
114 doi = "10.1103/PhysRevB.76.224103",
115 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
116 longe(r)-range-interactions, brittle propagation of
117 fracture, more available potentials, universal energy
118 relation (uer), minimum range model (mrm)",
122 title = "Comparative study of silicon empirical interatomic
124 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
125 journal = "Phys. Rev. B",
128 pages = "2250--2279",
132 doi = "10.1103/PhysRevB.46.2250",
133 publisher = "American Physical Society",
134 notes = "comparison of classical potentials for si",
138 title = "Stress relaxation in $a-Si$ induced by ion
140 author = "H. M. Urbassek M. Koster",
141 journal = "Phys. Rev. B",
144 pages = "11219--11224",
148 doi = "10.1103/PhysRevB.62.11219",
149 publisher = "American Physical Society",
150 notes = "virial derivation for 3-body tersoff potential",
153 @Article{breadmore99,
154 title = "Direct simulation of ion-beam-induced stressing and
155 amorphization of silicon",
156 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
157 journal = "Phys. Rev. B",
160 pages = "12610--12616",
164 doi = "10.1103/PhysRevB.60.12610",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
170 author = "Henri Moissan",
171 title = "Nouvelles recherches sur la météorité de Cañon
173 journal = "Comptes rendus de l'Académie des Sciences",
180 author = "Y. S. Park",
181 title = "Si{C} Materials and Devices",
182 publisher = "Academic Press",
183 address = "San Diego",
188 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
189 Calvin H. Carter Jr. and D. Asbury",
190 title = "Si{C} Seeded Boule Growth",
191 journal = "Materials Science Forum",
195 notes = "modified lely process, micropipes",
199 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
200 Thermodynamical Properties of Lennard-Jones Molecules",
201 author = "Loup Verlet",
202 journal = "Phys. Rev.",
208 doi = "10.1103/PhysRev.159.98",
209 publisher = "American Physical Society",
210 notes = "velocity verlet integration algorithm equation of
214 @Article{berendsen84,
215 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
216 Gunsteren and A. DiNola and J. R. Haak",
218 title = "Molecular dynamics with coupling to an external bath",
221 journal = "The Journal of Chemical Physics",
224 pages = "3684--3690",
225 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
226 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
227 URL = "http://link.aip.org/link/?JCP/81/3684/1",
228 doi = "10.1063/1.448118",
229 notes = "berendsen thermostat barostat",
233 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
235 title = "Molecular dynamics determination of defect energetics
236 in beta -Si{C} using three representative empirical
238 journal = "Modelling and Simulation in Materials Science and
243 URL = "http://stacks.iop.org/0965-0393/3/615",
244 notes = "comparison of tersoff, pearson and eam for defect
245 energetics in sic; (m)eam parameters for sic",
250 title = "Relationship between the embedded-atom method and
252 author = "Donald W. Brenner",
253 journal = "Phys. Rev. Lett.",
260 doi = "10.1103/PhysRevLett.63.1022",
261 publisher = "American Physical Society",
262 notes = "relation of tersoff and eam potential",
266 title = "Molecular-dynamics study of self-interstitials in
268 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
269 journal = "Phys. Rev. B",
272 pages = "9552--9558",
276 doi = "10.1103/PhysRevB.35.9552",
277 publisher = "American Physical Society",
278 notes = "selft-interstitials in silicon, stillinger-weber,
279 calculation of defect formation energy, defect
284 title = "Extended interstitials in silicon and germanium",
285 author = "H. R. Schober",
286 journal = "Phys. Rev. B",
289 pages = "13013--13015",
293 doi = "10.1103/PhysRevB.39.13013",
294 publisher = "American Physical Society",
295 notes = "stillinger-weber silicon 110 stable and metastable
296 dumbbell configuration",
300 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
301 Defect accumulation, topological features, and
303 author = "F. Gao and W. J. Weber",
304 journal = "Phys. Rev. B",
311 doi = "10.1103/PhysRevB.66.024106",
312 publisher = "American Physical Society",
313 notes = "sic intro, si cascade in 3c-sic, amorphization,
314 tersoff modified, pair correlation of amorphous sic, md
318 @Article{devanathan98,
319 title = "Computer simulation of a 10 ke{V} Si displacement
321 journal = "Nuclear Instruments and Methods in Physics Research
322 Section B: Beam Interactions with Materials and Atoms",
328 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
329 author = "R. Devanathan and W. J. Weber and T. Diaz de la
331 notes = "modified tersoff short range potential, ab initio
335 @Article{devanathan98_2,
336 title = "Displacement threshold energies in [beta]-Si{C}",
337 journal = "Journal of Nuclear Materials",
343 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
344 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
346 notes = "modified tersoff, ab initio, combined ab initio
350 @Article{kitabatake00,
351 title = "Si{C}/Si heteroepitaxial growth",
352 author = "M. Kitabatake",
353 journal = "Thin Solid Films",
358 notes = "md simulation, sic si heteroepitaxy, mbe",
362 title = "Intrinsic point defects in crystalline silicon:
363 Tight-binding molecular dynamics studies of
364 self-diffusion, interstitial-vacancy recombination, and
366 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
368 journal = "Phys. Rev. B",
371 pages = "14279--14289",
375 doi = "10.1103/PhysRevB.55.14279",
376 publisher = "American Physical Society",
377 notes = "si self interstitial, diffusion, tbmd",
381 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
384 title = "A kinetic Monte--Carlo study of the effective
385 diffusivity of the silicon self-interstitial in the
386 presence of carbon and boron",
389 journal = "Journal of Applied Physics",
392 pages = "1963--1967",
393 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
394 CARBON ADDITIONS; BORON ADDITIONS; elemental
395 semiconductors; self-diffusion",
396 URL = "http://link.aip.org/link/?JAP/84/1963/1",
397 doi = "10.1063/1.368328",
398 notes = "kinetic monte carlo of si self interstitial
403 title = "Barrier to Migration of the Silicon
405 author = "Y. Bar-Yam and J. D. Joannopoulos",
406 journal = "Phys. Rev. Lett.",
409 pages = "1129--1132",
413 doi = "10.1103/PhysRevLett.52.1129",
414 publisher = "American Physical Society",
415 notes = "si self-interstitial migration barrier",
418 @Article{bar-yam84_2,
419 title = "Electronic structure and total-energy migration
420 barriers of silicon self-interstitials",
421 author = "Y. Bar-Yam and J. D. Joannopoulos",
422 journal = "Phys. Rev. B",
425 pages = "1844--1852",
429 doi = "10.1103/PhysRevB.30.1844",
430 publisher = "American Physical Society",
434 title = "Tight-binding theory of native point defects in
436 author = "L. Colombo",
437 journal = "Annu. Rev. Mater. Res.",
442 doi = "10.1146/annurev.matsci.32.111601.103036",
443 publisher = "Annual Reviews",
444 notes = "si self interstitial, tbmd, virial stress",
447 @Article{al-mushadani03,
448 title = "Free-energy calculations of intrinsic point defects in
450 author = "O. K. Al-Mushadani and R. J. Needs",
451 journal = "Phys. Rev. B",
458 doi = "10.1103/PhysRevB.68.235205",
459 publisher = "American Physical Society",
460 notes = "formation energies of intrinisc point defects in
461 silicon, si self interstitials, free energy",
465 title = "Ab initio study of self-diffusion in silicon over a
466 wide temperature range: Point defect states and
467 migration mechanisms",
468 author = "Shangyi Ma and Shaoqing Wang",
469 journal = "Phys. Rev. B",
476 doi = "10.1103/PhysRevB.81.193203",
477 publisher = "American Physical Society",
478 notes = "si self interstitial diffusion + refs",
482 title = "Atomistic simulations on the thermal stability of the
483 antisite pair in 3{C}- and 4{H}-Si{C}",
484 author = "M. Posselt and F. Gao and W. J. Weber",
485 journal = "Phys. Rev. B",
492 doi = "10.1103/PhysRevB.73.125206",
493 publisher = "American Physical Society",
497 title = "Correlation between self-diffusion in Si and the
498 migration mechanisms of vacancies and
499 self-interstitials: An atomistic study",
500 author = "M. Posselt and F. Gao and H. Bracht",
501 journal = "Phys. Rev. B",
508 doi = "10.1103/PhysRevB.78.035208",
509 publisher = "American Physical Society",
510 notes = "si self-interstitial and vacancy diffusion, stillinger
515 title = "Ab initio and empirical-potential studies of defect
516 properties in $3{C}-Si{C}$",
517 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
519 journal = "Phys. Rev. B",
526 doi = "10.1103/PhysRevB.64.245208",
527 publisher = "American Physical Society",
528 notes = "defects in 3c-sic",
532 title = "Empirical potential approach for defect properties in
534 journal = "Nuclear Instruments and Methods in Physics Research
535 Section B: Beam Interactions with Materials and Atoms",
542 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
543 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
544 author = "Fei Gao and William J. Weber",
545 keywords = "Empirical potential",
546 keywords = "Defect properties",
547 keywords = "Silicon carbide",
548 keywords = "Computer simulation",
549 notes = "sic potential, brenner type, like erhart/albe",
553 title = "Atomistic study of intrinsic defect migration in
555 author = "Fei Gao and William J. Weber and M. Posselt and V.
557 journal = "Phys. Rev. B",
564 doi = "10.1103/PhysRevB.69.245205",
565 publisher = "American Physical Society",
566 notes = "defect migration in sic",
570 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
573 title = "Ab Initio atomic simulations of antisite pair recovery
574 in cubic silicon carbide",
577 journal = "Applied Physics Letters",
583 keywords = "ab initio calculations; silicon compounds; antisite
584 defects; wide band gap semiconductors; molecular
585 dynamics method; density functional theory;
586 electron-hole recombination; photoluminescence;
587 impurities; diffusion",
588 URL = "http://link.aip.org/link/?APL/90/221915/1",
589 doi = "10.1063/1.2743751",
592 @Article{mattoni2002,
593 title = "Self-interstitial trapping by carbon complexes in
594 crystalline silicon",
595 author = "A. Mattoni and F. Bernardini and L. Colombo",
596 journal = "Phys. Rev. B",
603 doi = "10.1103/PhysRevB.66.195214",
604 publisher = "American Physical Society",
605 notes = "c in c-si, diffusion, interstitial configuration +
606 links, interaction of carbon and silicon interstitials,
607 tersoff suitability",
611 title = "Calculations of Silicon Self-Interstitial Defects",
612 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
614 journal = "Phys. Rev. Lett.",
617 pages = "2351--2354",
621 doi = "10.1103/PhysRevLett.83.2351",
622 publisher = "American Physical Society",
623 notes = "nice images of the defects, si defect overview +
628 title = "Identification of the migration path of interstitial
630 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
631 journal = "Phys. Rev. B",
634 pages = "7439--7442",
638 doi = "10.1103/PhysRevB.50.7439",
639 publisher = "American Physical Society",
640 notes = "carbon interstitial migration path shown, 001 c-si
645 title = "Theory of carbon-carbon pairs in silicon",
646 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
647 journal = "Phys. Rev. B",
650 pages = "9845--9850",
654 doi = "10.1103/PhysRevB.58.9845",
655 publisher = "American Physical Society",
656 notes = "carbon pairs in si",
660 title = "Ab initio investigation of carbon-related defects in
662 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
664 journal = "Phys. Rev. B",
667 pages = "12554--12557",
671 doi = "10.1103/PhysRevB.47.12554",
672 publisher = "American Physical Society",
673 notes = "c interstitials in crystalline silicon",
677 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
679 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
680 Sokrates T. Pantelides",
681 journal = "Phys. Rev. Lett.",
684 pages = "1814--1817",
688 doi = "10.1103/PhysRevLett.52.1814",
689 publisher = "American Physical Society",
690 notes = "microscopic theory diffusion silicon dft migration
695 title = "Unified Approach for Molecular Dynamics and
696 Density-Functional Theory",
697 author = "R. Car and M. Parrinello",
698 journal = "Phys. Rev. Lett.",
701 pages = "2471--2474",
705 doi = "10.1103/PhysRevLett.55.2471",
706 publisher = "American Physical Society",
707 notes = "car parrinello method, dft and md",
711 title = "Short-range order, bulk moduli, and physical trends in
712 c-$Si1-x$$Cx$ alloys",
713 author = "P. C. Kelires",
714 journal = "Phys. Rev. B",
717 pages = "8784--8787",
721 doi = "10.1103/PhysRevB.55.8784",
722 publisher = "American Physical Society",
723 notes = "c strained si, montecarlo md, bulk moduli, next
728 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
729 Application to the $Si1-x-yGexCy$ System",
730 author = "P. C. Kelires",
731 journal = "Phys. Rev. Lett.",
734 pages = "1114--1117",
738 doi = "10.1103/PhysRevLett.75.1114",
739 publisher = "American Physical Society",
740 notes = "mc md, strain compensation in si ge by c insertion",
744 title = "Low temperature electron irradiation of silicon
746 journal = "Solid State Communications",
753 doi = "DOI: 10.1016/0038-1098(70)90074-8",
754 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
755 author = "A. R. Bean and R. C. Newman",
759 title = "{EPR} Observation of the Isolated Interstitial Carbon
761 author = "G. D. Watkins and K. L. Brower",
762 journal = "Phys. Rev. Lett.",
765 pages = "1329--1332",
769 doi = "10.1103/PhysRevLett.36.1329",
770 publisher = "American Physical Society",
771 notes = "epr observations of 100 interstitial carbon atom in
776 title = "{EPR} identification of the single-acceptor state of
777 interstitial carbon in silicon",
778 author = "L. W. Song and G. D. Watkins",
779 journal = "Phys. Rev. B",
782 pages = "5759--5764",
786 doi = "10.1103/PhysRevB.42.5759",
787 publisher = "American Physical Society",
788 notes = "carbon diffusion in silicon",
792 author = "A K Tipping and R C Newman",
793 title = "The diffusion coefficient of interstitial carbon in
795 journal = "Semiconductor Science and Technology",
799 URL = "http://stacks.iop.org/0268-1242/2/315",
801 notes = "diffusion coefficient of carbon interstitials in
806 title = "Carbon incorporation into Si at high concentrations by
807 ion implantation and solid phase epitaxy",
808 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
809 Picraux and J. K. Watanabe and J. W. Mayer",
810 journal = "J. Appl. Phys.",
815 doi = "10.1063/1.360806",
816 notes = "strained silicon, carbon supersaturation",
819 @Article{laveant2002,
820 title = "Epitaxy of carbon-rich silicon with {MBE}",
821 journal = "Materials Science and Engineering B",
827 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
828 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
829 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
831 notes = "low c in si, tensile stress to compensate compressive
832 stress, avoid sic precipitation",
836 author = "P. Werner and S. Eichler and G. Mariani and R.
837 K{\"{o}}gler and W. Skorupa",
838 title = "Investigation of {C}[sub x]Si defects in {C} implanted
839 silicon by transmission electron microscopy",
842 journal = "Applied Physics Letters",
846 keywords = "silicon; ion implantation; carbon; crystal defects;
847 transmission electron microscopy; annealing; positron
848 annihilation; secondary ion mass spectroscopy; buried
849 layers; precipitation",
850 URL = "http://link.aip.org/link/?APL/70/252/1",
851 doi = "10.1063/1.118381",
852 notes = "si-c complexes, agglomerate, sic in si matrix, sic
856 @InProceedings{werner96,
857 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
859 booktitle = "Ion Implantation Technology. Proceedings of the 11th
860 International Conference on",
861 title = "{TEM} investigation of {C}-Si defects in carbon
868 keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
869 atom/radiation induced defect interaction;C depth
870 distribution;C precipitation;C-Si defects;C-Si
871 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
872 energy ion implantation;ion implantation;metastable
873 agglomerates;microdefects;positron annihilation
874 spectroscopy;rapid thermal annealing;secondary ion mass
875 spectrometry;vacancy clusters;buried
876 layers;carbon;elemental semiconductors;impurity-defect
877 interactions;ion implantation;positron
878 annihilation;precipitation;rapid thermal
879 annealing;secondary ion mass
880 spectra;silicon;transmission electron
881 microscopy;vacancies (crystal);",
882 doi = "10.1109/IIT.1996.586497",
884 notes = "c-si agglomerates dumbbells",
888 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
889 Picraux and J. K. Watanabe and J. W. Mayer",
891 title = "Precipitation and relaxation in strained Si[sub 1 -
892 y]{C}[sub y]/Si heterostructures",
895 journal = "Journal of Applied Physics",
898 pages = "3656--3668",
899 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
900 URL = "http://link.aip.org/link/?JAP/76/3656/1",
901 doi = "10.1063/1.357429",
902 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
903 precipitation by substitutional carbon, coherent prec,
904 coherent to incoherent transition strain vs interface
909 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
912 title = "Investigation of the high temperature behavior of
913 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
916 journal = "Journal of Applied Physics",
919 pages = "1934--1937",
920 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
921 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
922 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
923 TEMPERATURE RANGE 04001000 K",
924 URL = "http://link.aip.org/link/?JAP/77/1934/1",
925 doi = "10.1063/1.358826",
929 title = "Prospects for device implementation of wide band gap
931 author = "J. H. Edgar",
932 journal = "J. Mater. Res.",
937 doi = "10.1557/JMR.1992.0235",
938 notes = "properties wide band gap semiconductor, sic
942 @Article{zirkelbach2007,
943 title = "Monte Carlo simulation study of a selforganisation
944 process leading to ordered precipitate structures",
945 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
947 journal = "Nucl. Instr. and Meth. B",
954 doi = "doi:10.1016/j.nimb.2006.12.118",
955 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
959 @Article{zirkelbach2006,
960 title = "Monte-Carlo simulation study of the self-organization
961 of nanometric amorphous precipitates in regular arrays
962 during ion irradiation",
963 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
965 journal = "Nucl. Instr. and Meth. B",
972 doi = "doi:10.1016/j.nimb.2005.08.162",
973 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
977 @Article{zirkelbach2005,
978 title = "Modelling of a selforganization process leading to
979 periodic arrays of nanometric amorphous precipitates by
981 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
983 journal = "Comp. Mater. Sci.",
990 doi = "doi:10.1016/j.commatsci.2004.12.016",
991 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
996 title = "Controlling the density distribution of Si{C}
997 nanocrystals for the ion beam synthesis of buried Si{C}
999 journal = "Nuclear Instruments and Methods in Physics Research
1000 Section B: Beam Interactions with Materials and Atoms",
1007 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1008 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1009 author = "J. K. N. Lindner and B. Stritzker",
1010 notes = "two-step implantation process",
1013 @Article{lindner99_2,
1014 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1016 journal = "Nuclear Instruments and Methods in Physics Research
1017 Section B: Beam Interactions with Materials and Atoms",
1023 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1024 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1025 author = "J. K. N. Lindner and B. Stritzker",
1026 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1030 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1031 Basic physical processes",
1032 journal = "Nuclear Instruments and Methods in Physics Research
1033 Section B: Beam Interactions with Materials and Atoms",
1040 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1041 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1042 author = "J{\"{o}}rg K. N. Lindner",
1046 title = "High-dose carbon implantations into silicon:
1047 fundamental studies for new technological tricks",
1048 author = "J. K. N. Lindner",
1049 journal = "Appl. Phys. A",
1053 doi = "10.1007/s00339-002-2062-8",
1054 notes = "ibs, burried sic layers",
1058 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1059 application in buffer layer for Ga{N} epitaxial
1061 journal = "Applied Surface Science",
1066 note = "APHYS'03 Special Issue",
1068 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1069 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1070 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1071 and S. Nishio and K. Yasuda and Y. Ishigami",
1072 notes = "gan on 3c-sic",
1076 author = "B. J. Alder and T. E. Wainwright",
1077 title = "Phase Transition for a Hard Sphere System",
1080 journal = "The Journal of Chemical Physics",
1083 pages = "1208--1209",
1084 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1085 doi = "10.1063/1.1743957",
1089 author = "B. J. Alder and T. E. Wainwright",
1090 title = "Studies in Molecular Dynamics. {I}. General Method",
1093 journal = "The Journal of Chemical Physics",
1097 URL = "http://link.aip.org/link/?JCP/31/459/1",
1098 doi = "10.1063/1.1730376",
1101 @Article{tersoff_si1,
1102 title = "New empirical model for the structural properties of
1104 author = "J. Tersoff",
1105 journal = "Phys. Rev. Lett.",
1112 doi = "10.1103/PhysRevLett.56.632",
1113 publisher = "American Physical Society",
1116 @Article{tersoff_si2,
1117 title = "New empirical approach for the structure and energy of
1119 author = "J. Tersoff",
1120 journal = "Phys. Rev. B",
1123 pages = "6991--7000",
1127 doi = "10.1103/PhysRevB.37.6991",
1128 publisher = "American Physical Society",
1131 @Article{tersoff_si3,
1132 title = "Empirical interatomic potential for silicon with
1133 improved elastic properties",
1134 author = "J. Tersoff",
1135 journal = "Phys. Rev. B",
1138 pages = "9902--9905",
1142 doi = "10.1103/PhysRevB.38.9902",
1143 publisher = "American Physical Society",
1147 title = "Empirical Interatomic Potential for Carbon, with
1148 Applications to Amorphous Carbon",
1149 author = "J. Tersoff",
1150 journal = "Phys. Rev. Lett.",
1153 pages = "2879--2882",
1157 doi = "10.1103/PhysRevLett.61.2879",
1158 publisher = "American Physical Society",
1162 title = "Modeling solid-state chemistry: Interatomic potentials
1163 for multicomponent systems",
1164 author = "J. Tersoff",
1165 journal = "Phys. Rev. B",
1168 pages = "5566--5568",
1172 doi = "10.1103/PhysRevB.39.5566",
1173 publisher = "American Physical Society",
1177 title = "Carbon defects and defect reactions in silicon",
1178 author = "J. Tersoff",
1179 journal = "Phys. Rev. Lett.",
1182 pages = "1757--1760",
1186 doi = "10.1103/PhysRevLett.64.1757",
1187 publisher = "American Physical Society",
1191 title = "Point defects and dopant diffusion in silicon",
1192 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1193 journal = "Rev. Mod. Phys.",
1200 doi = "10.1103/RevModPhys.61.289",
1201 publisher = "American Physical Society",
1205 title = "Silicon carbide: synthesis and processing",
1206 journal = "Nuclear Instruments and Methods in Physics Research
1207 Section B: Beam Interactions with Materials and Atoms",
1212 note = "Radiation Effects in Insulators",
1214 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1215 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1216 author = "W. Wesch",
1220 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1221 Lin and B. Sverdlov and M. Burns",
1223 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1224 ZnSe-based semiconductor device technologies",
1227 journal = "Journal of Applied Physics",
1230 pages = "1363--1398",
1231 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1232 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1233 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1235 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1236 doi = "10.1063/1.358463",
1237 notes = "sic intro, properties",
1241 author = "P. G. Neudeck",
1242 title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
1243 {ELECTRONICS} {TECHNOLOGY}",
1244 journal = "Journal of Electronic Materials",
1253 author = "Noch Unbekannt",
1254 title = "How to find references",
1255 journal = "Journal of Applied References",
1262 title = "Atomistic simulation of thermomechanical properties of
1264 author = "Meijie Tang and Sidney Yip",
1265 journal = "Phys. Rev. B",
1268 pages = "15150--15159",
1271 doi = "10.1103/PhysRevB.52.15150",
1272 notes = "modified tersoff, scale cutoff with volume, promising
1273 tersoff reparametrization",
1274 publisher = "American Physical Society",
1278 title = "Silicon carbide as a new {MEMS} technology",
1279 journal = "Sensors and Actuators A: Physical",
1285 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1286 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1287 author = "Pasqualina M. Sarro",
1289 keywords = "Silicon carbide",
1290 keywords = "Micromachining",
1291 keywords = "Mechanical stress",
1295 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1296 semiconductor for high-temperature applications: {A}
1298 journal = "Solid-State Electronics",
1301 pages = "1409--1422",
1304 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1305 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1306 author = "J. B. Casady and R. W. Johnson",
1307 notes = "sic intro",
1310 @Article{giancarli98,
1311 title = "Design requirements for Si{C}/Si{C} composites
1312 structural material in fusion power reactor blankets",
1313 journal = "Fusion Engineering and Design",
1319 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1320 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1321 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1322 Marois and N. B. Morley and J. F. Salavy",
1326 title = "Electrical and optical characterization of Si{C}",
1327 journal = "Physica B: Condensed Matter",
1333 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1334 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1335 author = "G. Pensl and W. J. Choyke",
1339 title = "Investigation of growth processes of ingots of silicon
1340 carbide single crystals",
1341 journal = "Journal of Crystal Growth",
1346 notes = "modified lely process",
1348 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1349 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1350 author = "Yu. M. Tairov and V. F. Tsvetkov",
1354 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1357 title = "Production of large-area single-crystal wafers of
1358 cubic Si{C} for semiconductor devices",
1361 journal = "Applied Physics Letters",
1365 keywords = "silicon carbides; layers; chemical vapor deposition;
1367 URL = "http://link.aip.org/link/?APL/42/460/1",
1368 doi = "10.1063/1.93970",
1369 notes = "cvd of 3c-sic on si, sic buffer layer",
1373 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1374 and Hiroyuki Matsunami",
1376 title = "Epitaxial growth and electric characteristics of cubic
1380 journal = "Journal of Applied Physics",
1383 pages = "4889--4893",
1384 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1385 doi = "10.1063/1.338355",
1386 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1391 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1393 title = "Growth and Characterization of Cubic Si{C}
1394 Single-Crystal Films on Si",
1397 journal = "Journal of The Electrochemical Society",
1400 pages = "1558--1565",
1401 keywords = "semiconductor materials; silicon compounds; carbon
1402 compounds; crystal morphology; electron mobility",
1403 URL = "http://link.aip.org/link/?JES/134/1558/1",
1404 doi = "10.1149/1.2100708",
1405 notes = "blue light emitting diodes (led)",
1409 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1410 and Hiroyuki Matsunami",
1411 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1415 journal = "Journal of Applied Physics",
1419 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1420 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1422 URL = "http://link.aip.org/link/?JAP/73/726/1",
1423 doi = "10.1063/1.353329",
1424 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1428 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1429 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1430 Yoganathan and J. Yang and P. Pirouz",
1432 title = "Growth of improved quality 3{C}-Si{C} films on
1433 6{H}-Si{C} substrates",
1436 journal = "Applied Physics Letters",
1439 pages = "1353--1355",
1440 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1441 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1442 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1444 URL = "http://link.aip.org/link/?APL/56/1353/1",
1445 doi = "10.1063/1.102512",
1446 notes = "cvd of 3c-sic on 6h-sic",
1450 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1451 Thokala and M. J. Loboda",
1453 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1454 films on 6{H}-Si{C} by chemical vapor deposition from
1458 journal = "Journal of Applied Physics",
1461 pages = "1271--1273",
1462 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1463 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1465 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1466 doi = "10.1063/1.360368",
1467 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1471 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1472 [alpha]-Si{C}(0001) at low temperatures by solid-source
1473 molecular beam epitaxy",
1474 journal = "Journal of Crystal Growth",
1480 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1481 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1482 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1483 Schr{\"{o}}ter and W. Richter",
1484 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1487 @Article{fissel95_apl,
1488 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1490 title = "Low-temperature growth of Si{C} thin films on Si and
1491 6{H}--Si{C} by solid-source molecular beam epitaxy",
1494 journal = "Applied Physics Letters",
1497 pages = "3182--3184",
1498 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1500 URL = "http://link.aip.org/link/?APL/66/3182/1",
1501 doi = "10.1063/1.113716",
1502 notes = "mbe 3c-sic on si and 6h-sic",
1506 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1508 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1512 journal = "Applied Physics Letters",
1516 URL = "http://link.aip.org/link/?APL/18/509/1",
1517 doi = "10.1063/1.1653516",
1518 notes = "first time sic by ibs, follow cites for precipitation
1523 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1524 J. Davis and G. E. Celler",
1526 title = "Formation of buried layers of beta-Si{C} using ion
1527 beam synthesis and incoherent lamp annealing",
1530 journal = "Applied Physics Letters",
1533 pages = "2242--2244",
1534 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1535 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1536 URL = "http://link.aip.org/link/?APL/51/2242/1",
1537 doi = "10.1063/1.98953",
1538 notes = "nice tem images, sic by ibs",
1542 author = "R. I. Scace and G. A. Slack",
1544 title = "Solubility of Carbon in Silicon and Germanium",
1547 journal = "The Journal of Chemical Physics",
1550 pages = "1551--1555",
1551 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1552 doi = "10.1063/1.1730236",
1553 notes = "solubility of c in c-si, si-c phase diagram",
1557 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1558 F. W. Saris and W. Vandervorst",
1560 title = "Role of {C} and {B} clusters in transient diffusion of
1564 journal = "Applied Physics Letters",
1567 pages = "1150--1152",
1568 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1569 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1571 URL = "http://link.aip.org/link/?APL/68/1150/1",
1572 doi = "10.1063/1.115706",
1573 notes = "suppression of transient enhanced diffusion (ted)",
1577 title = "Implantation and transient boron diffusion: the role
1578 of the silicon self-interstitial",
1579 journal = "Nuclear Instruments and Methods in Physics Research
1580 Section B: Beam Interactions with Materials and Atoms",
1585 note = "Selected Papers of the Tenth International Conference
1586 on Ion Implantation Technology (IIT '94)",
1588 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1589 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1590 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1595 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1596 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1597 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1600 title = "Physical mechanisms of transient enhanced dopant
1601 diffusion in ion-implanted silicon",
1604 journal = "Journal of Applied Physics",
1607 pages = "6031--6050",
1608 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1609 doi = "10.1063/1.364452",
1610 notes = "ted, transient enhanced diffusion, c silicon trap",
1614 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1616 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1617 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1620 journal = "Applied Physics Letters",
1624 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1625 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1626 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1628 URL = "http://link.aip.org/link/?APL/64/324/1",
1629 doi = "10.1063/1.111195",
1630 notes = "beta sic nano crystals in si, mbe, annealing",
1634 author = "Richard A. Soref",
1636 title = "Optical band gap of the ternary semiconductor Si[sub 1
1637 - x - y]Ge[sub x]{C}[sub y]",
1640 journal = "Journal of Applied Physics",
1643 pages = "2470--2472",
1644 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1645 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1647 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1648 doi = "10.1063/1.349403",
1649 notes = "band gap of strained si by c",
1653 author = "E Kasper",
1654 title = "Superlattices of group {IV} elements, a new
1655 possibility to produce direct band gap material",
1656 journal = "Physica Scripta",
1659 URL = "http://stacks.iop.org/1402-4896/T35/232",
1661 notes = "superlattices, convert indirect band gap into a
1666 author = "H. J. Osten and J. Griesche and S. Scalese",
1668 title = "Substitutional carbon incorporation in epitaxial
1669 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1670 molecular beam epitaxy",
1673 journal = "Applied Physics Letters",
1677 keywords = "molecular beam epitaxial growth; semiconductor growth;
1678 wide band gap semiconductors; interstitials; silicon
1680 URL = "http://link.aip.org/link/?APL/74/836/1",
1681 doi = "10.1063/1.123384",
1682 notes = "substitutional c in si",
1685 @Article{hohenberg64,
1686 title = "Inhomogeneous Electron Gas",
1687 author = "P. Hohenberg and W. Kohn",
1688 journal = "Phys. Rev.",
1691 pages = "B864--B871",
1695 doi = "10.1103/PhysRev.136.B864",
1696 publisher = "American Physical Society",
1697 notes = "density functional theory, dft",
1701 title = "Self-Consistent Equations Including Exchange and
1702 Correlation Effects",
1703 author = "W. Kohn and L. J. Sham",
1704 journal = "Phys. Rev.",
1707 pages = "A1133--A1138",
1711 doi = "10.1103/PhysRev.140.A1133",
1712 publisher = "American Physical Society",
1713 notes = "dft, exchange and correlation",
1717 title = "Strain-stabilized highly concentrated pseudomorphic
1718 $Si1-x$$Cx$ layers in Si",
1719 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1721 journal = "Phys. Rev. Lett.",
1724 pages = "3578--3581",
1728 doi = "10.1103/PhysRevLett.72.3578",
1729 publisher = "American Physical Society",
1730 notes = "high c concentration in si, heterostructure, starined
1735 title = "Electron Transport Model for Strained Silicon-Carbon
1737 author = "Shu-Tong Chang and Chung-Yi Lin",
1738 journal = "Japanese Journal of Applied Physics",
1741 pages = "2257--2262",
1744 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1745 doi = "10.1143/JJAP.44.2257",
1746 publisher = "The Japan Society of Applied Physics",
1747 notes = "enhance of electron mobility in starined si",
1751 author = "H. J. Osten and P. Gaworzewski",
1753 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1754 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1758 journal = "Journal of Applied Physics",
1761 pages = "4977--4981",
1762 keywords = "silicon compounds; Ge-Si alloys; wide band gap
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1765 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1766 doi = "10.1063/1.366364",
1767 notes = "charge transport in strained si",
1771 title = "Carbon-mediated aggregation of self-interstitials in
1772 silicon: {A} large-scale molecular dynamics study",
1773 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1774 journal = "Phys. Rev. B",
1781 doi = "10.1103/PhysRevB.69.155214",
1782 publisher = "American Physical Society",
1783 notes = "simulation using promising tersoff reparametrization",
1787 title = "Event-Based Relaxation of Continuous Disordered
1789 author = "G. T. Barkema and Normand Mousseau",
1790 journal = "Phys. Rev. Lett.",
1793 pages = "4358--4361",
1797 doi = "10.1103/PhysRevLett.77.4358",
1798 publisher = "American Physical Society",
1799 notes = "activation relaxation technique, art, speed up slow
1804 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1805 Minoukadeh and F. Willaime",
1807 title = "Some improvements of the activation-relaxation
1808 technique method for finding transition pathways on
1809 potential energy surfaces",
1812 journal = "The Journal of Chemical Physics",
1818 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1819 surfaces; vacancies (crystal)",
1820 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1821 doi = "10.1063/1.3088532",
1822 notes = "improvements to art, refs for methods to find
1823 transition pathways",
1826 @Article{parrinello81,
1827 author = "M. Parrinello and A. Rahman",
1829 title = "Polymorphic transitions in single crystals: {A} new
1830 molecular dynamics method",
1833 journal = "Journal of Applied Physics",
1836 pages = "7182--7190",
1837 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1838 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1839 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1840 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1841 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1843 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1844 doi = "10.1063/1.328693",
1847 @Article{stillinger85,
1848 title = "Computer simulation of local order in condensed phases
1850 author = "Frank H. Stillinger and Thomas A. Weber",
1851 journal = "Phys. Rev. B",
1854 pages = "5262--5271",
1858 doi = "10.1103/PhysRevB.31.5262",
1859 publisher = "American Physical Society",
1863 title = "Empirical potential for hydrocarbons for use in
1864 simulating the chemical vapor deposition of diamond
1866 author = "Donald W. Brenner",
1867 journal = "Phys. Rev. B",
1870 pages = "9458--9471",
1874 doi = "10.1103/PhysRevB.42.9458",
1875 publisher = "American Physical Society",
1876 notes = "brenner hydro carbons",
1880 title = "Modeling of Covalent Bonding in Solids by Inversion of
1881 Cohesive Energy Curves",
1882 author = "Martin Z. Bazant and Efthimios Kaxiras",
1883 journal = "Phys. Rev. Lett.",
1886 pages = "4370--4373",
1890 doi = "10.1103/PhysRevLett.77.4370",
1891 publisher = "American Physical Society",
1892 notes = "first si edip",
1896 title = "Environment-dependent interatomic potential for bulk
1898 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1900 journal = "Phys. Rev. B",
1903 pages = "8542--8552",
1907 doi = "10.1103/PhysRevB.56.8542",
1908 publisher = "American Physical Society",
1909 notes = "second si edip",
1913 title = "Interatomic potential for silicon defects and
1915 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
1916 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
1917 journal = "Phys. Rev. B",
1920 pages = "2539--2550",
1924 doi = "10.1103/PhysRevB.58.2539",
1925 publisher = "American Physical Society",
1926 notes = "latest si edip, good dislocation explanation",
1930 title = "{PARCAS} molecular dynamics code",
1931 author = "K. Nordlund",
1936 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1938 author = "Arthur F. Voter",
1939 journal = "Phys. Rev. Lett.",
1942 pages = "3908--3911",
1946 doi = "10.1103/PhysRevLett.78.3908",
1947 publisher = "American Physical Society",
1948 notes = "hyperdynamics, accelerated md",
1952 author = "Arthur F. Voter",
1954 title = "A method for accelerating the molecular dynamics
1955 simulation of infrequent events",
1958 journal = "The Journal of Chemical Physics",
1961 pages = "4665--4677",
1962 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1963 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1964 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1965 energy functions; surface diffusion; reaction kinetics
1966 theory; potential energy surfaces",
1967 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1968 doi = "10.1063/1.473503",
1969 notes = "improved hyperdynamics md",
1972 @Article{sorensen2000,
1973 author = "Mads R. S\o rensen and Arthur F. Voter",
1975 title = "Temperature-accelerated dynamics for simulation of
1979 journal = "The Journal of Chemical Physics",
1982 pages = "9599--9606",
1983 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1984 MOLECULAR DYNAMICS METHOD; surface diffusion",
1985 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1986 doi = "10.1063/1.481576",
1987 notes = "temperature accelerated dynamics, tad",
1991 title = "Parallel replica method for dynamics of infrequent
1993 author = "Arthur F. Voter",
1994 journal = "Phys. Rev. B",
1997 pages = "R13985--R13988",
2001 doi = "10.1103/PhysRevB.57.R13985",
2002 publisher = "American Physical Society",
2003 notes = "parallel replica method, accelerated md",
2007 author = "Xiongwu Wu and Shaomeng Wang",
2009 title = "Enhancing systematic motion in molecular dynamics
2013 journal = "The Journal of Chemical Physics",
2016 pages = "9401--9410",
2017 keywords = "molecular dynamics method; argon; Lennard-Jones
2018 potential; crystallisation; liquid theory",
2019 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2020 doi = "10.1063/1.478948",
2021 notes = "self guided md, sgmd, accelerated md, enhancing
2025 @Article{choudhary05,
2026 author = "Devashish Choudhary and Paulette Clancy",
2028 title = "Application of accelerated molecular dynamics schemes
2029 to the production of amorphous silicon",
2032 journal = "The Journal of Chemical Physics",
2038 keywords = "molecular dynamics method; silicon; glass structure;
2039 amorphous semiconductors",
2040 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2041 doi = "10.1063/1.1878733",
2042 notes = "explanation of sgmd and hyper md, applied to amorphous
2047 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2049 title = "Carbon precipitation in silicon: Why is it so
2053 journal = "Applied Physics Letters",
2056 pages = "3336--3338",
2057 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2058 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2060 URL = "http://link.aip.org/link/?APL/62/3336/1",
2061 doi = "10.1063/1.109063",
2062 notes = "interfacial energy of cubic sic and si",
2065 @Article{chaussende08,
2066 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2067 journal = "Journal of Crystal Growth",
2072 note = "Proceedings of the E-MRS Conference, Symposium G -
2073 Substrates of Wide Bandgap Materials",
2075 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2076 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2077 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2078 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2079 and A. Andreadou and E. K. Polychroniadis and C.
2080 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2081 notes = "3c-sic crystal growth, sic fabrication + links,
2086 title = "Forces in Molecules",
2087 author = "R. P. Feynman",
2088 journal = "Phys. Rev.",
2095 doi = "10.1103/PhysRev.56.340",
2096 publisher = "American Physical Society",
2097 notes = "hellmann feynman forces",
2101 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2102 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2103 their Contrasting Properties",
2104 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2106 journal = "Phys. Rev. Lett.",
2113 doi = "10.1103/PhysRevLett.84.943",
2114 publisher = "American Physical Society",
2115 notes = "si sio2 and sic sio2 interface",
2118 @Article{djurabekova08,
2119 title = "Atomistic simulation of the interface structure of Si
2120 nanocrystals embedded in amorphous silica",
2121 author = "Flyura Djurabekova and Kai Nordlund",
2122 journal = "Phys. Rev. B",
2129 doi = "10.1103/PhysRevB.77.115325",
2130 publisher = "American Physical Society",
2131 notes = "nc-si in sio2, interface energy, nc construction,
2132 angular distribution, coordination",
2136 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2137 W. Liang and J. Zou",
2139 title = "Nature of interfacial defects and their roles in
2140 strain relaxation at highly lattice mismatched
2141 3{C}-Si{C}/Si (001) interface",
2144 journal = "Journal of Applied Physics",
2150 keywords = "anelastic relaxation; crystal structure; dislocations;
2151 elemental semiconductors; semiconductor growth;
2152 semiconductor thin films; silicon; silicon compounds;
2153 stacking faults; wide band gap semiconductors",
2154 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2155 doi = "10.1063/1.3234380",
2156 notes = "sic/si interface, follow refs, tem image
2157 deconvolution, dislocation defects",
2160 @Article{kitabatake93,
2161 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2164 title = "Simulations and experiments of Si{C} heteroepitaxial
2165 growth on Si(001) surface",
2168 journal = "Journal of Applied Physics",
2171 pages = "4438--4445",
2172 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2173 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2174 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2175 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2176 doi = "10.1063/1.354385",
2177 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2182 title = "Strain relaxation and thermal stability of the
2183 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2185 journal = "Thin Solid Films",
2192 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2193 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2194 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2195 keywords = "Strain relaxation",
2196 keywords = "Interfaces",
2197 keywords = "Thermal stability",
2198 keywords = "Molecular dynamics",
2199 notes = "tersoff sic/si interface study",
2203 title = "Ab initio Study of Misfit Dislocations at the
2204 $Si{C}/Si(001)$ Interface",
2205 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2207 journal = "Phys. Rev. Lett.",
2214 doi = "10.1103/PhysRevLett.89.156101",
2215 publisher = "American Physical Society",
2216 notes = "sic/si interface study",
2219 @Article{pizzagalli03,
2220 title = "Theoretical investigations of a highly mismatched
2221 interface: Si{C}/Si(001)",
2222 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2224 journal = "Phys. Rev. B",
2231 doi = "10.1103/PhysRevB.68.195302",
2232 publisher = "American Physical Society",
2233 notes = "tersoff md and ab initio sic/si interface study",
2237 title = "Atomic configurations of dislocation core and twin
2238 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2239 electron microscopy",
2240 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2241 H. Zheng and J. W. Liang",
2242 journal = "Phys. Rev. B",
2249 doi = "10.1103/PhysRevB.75.184103",
2250 publisher = "American Physical Society",
2251 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2255 @Article{hornstra58,
2256 title = "Dislocations in the diamond lattice",
2257 journal = "Journal of Physics and Chemistry of Solids",
2264 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2265 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2266 author = "J. Hornstra",
2267 notes = "dislocations in diamond lattice",
2270 @Article{eichhorn99,
2271 author = "F. Eichhorn and N. Schell and W. Matz and R.
2274 title = "Strain and Si{C} particle formation in silicon
2275 implanted with carbon ions of medium fluence studied by
2276 synchrotron x-ray diffraction",
2279 journal = "Journal of Applied Physics",
2282 pages = "4184--4187",
2283 keywords = "silicon; carbon; elemental semiconductors; chemical
2284 interdiffusion; ion implantation; X-ray diffraction;
2285 precipitation; semiconductor doping",
2286 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2287 doi = "10.1063/1.371344",
2288 notes = "sic conversion by ibs, detected substitutional carbon,
2289 expansion of si lattice",
2292 @Article{eichhorn02,
2293 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2294 Metzger and W. Matz and R. K{\"{o}}gler",
2296 title = "Structural relation between Si and Si{C} formed by
2297 carbon ion implantation",
2300 journal = "Journal of Applied Physics",
2303 pages = "1287--1292",
2304 keywords = "silicon compounds; wide band gap semiconductors; ion
2305 implantation; annealing; X-ray scattering; transmission
2306 electron microscopy",
2307 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2308 doi = "10.1063/1.1428105",
2309 notes = "3c-sic alignement to si host in ibs depending on
2310 temperature, might explain c int to c sub trafo",
2314 author = "G Lucas and M Bertolus and L Pizzagalli",
2315 title = "An environment-dependent interatomic potential for
2316 silicon carbide: calculation of bulk properties,
2317 high-pressure phases, point and extended defects, and
2318 amorphous structures",
2319 journal = "Journal of Physics: Condensed Matter",
2323 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2329 author = "J Godet and L Pizzagalli and S Brochard and P
2331 title = "Comparison between classical potentials and ab initio
2332 methods for silicon under large shear",
2333 journal = "Journal of Physics: Condensed Matter",
2337 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2339 notes = "comparison of empirical potentials, stillinger weber,
2340 edip, tersoff, ab initio",
2343 @Article{moriguchi98,
2344 title = "Verification of Tersoff's Potential for Static
2345 Structural Analysis of Solids of Group-{IV} Elements",
2346 author = "Koji Moriguchi and Akira Shintani",
2347 journal = "Japanese Journal of Applied Physics",
2349 number = "Part 1, No. 2",
2353 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2354 doi = "10.1143/JJAP.37.414",
2355 publisher = "The Japan Society of Applied Physics",
2356 notes = "tersoff stringent test",
2359 @Article{mazzarolo01,
2360 title = "Low-energy recoils in crystalline silicon: Quantum
2362 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2363 Lulli and Eros Albertazzi",
2364 journal = "Phys. Rev. B",
2371 doi = "10.1103/PhysRevB.63.195207",
2372 publisher = "American Physical Society",
2375 @Article{holmstroem08,
2376 title = "Threshold defect production in silicon determined by
2377 density functional theory molecular dynamics
2379 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2380 journal = "Phys. Rev. B",
2387 doi = "10.1103/PhysRevB.78.045202",
2388 publisher = "American Physical Society",
2389 notes = "threshold displacement comparison empirical and ab
2393 @Article{nordlund97,
2394 title = "Repulsive interatomic potentials calculated using
2395 Hartree-Fock and density-functional theory methods",
2396 journal = "Nuclear Instruments and Methods in Physics Research
2397 Section B: Beam Interactions with Materials and Atoms",
2404 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2405 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2406 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2407 notes = "repulsive ab initio potential",
2411 title = "Efficiency of ab-initio total energy calculations for
2412 metals and semiconductors using a plane-wave basis
2414 journal = "Computational Materials Science",
2421 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2422 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2423 author = "G. Kresse and J. Furthm{\"{u}}ller",
2428 title = "Projector augmented-wave method",
2429 author = "P. E. Bl{\"o}chl",
2430 journal = "Phys. Rev. B",
2433 pages = "17953--17979",
2437 doi = "10.1103/PhysRevB.50.17953",
2438 publisher = "American Physical Society",
2439 notes = "paw method",
2443 title = "Norm-Conserving Pseudopotentials",
2444 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2445 journal = "Phys. Rev. Lett.",
2448 pages = "1494--1497",
2452 doi = "10.1103/PhysRevLett.43.1494",
2453 publisher = "American Physical Society",
2454 notes = "norm-conserving pseudopotentials",
2457 @Article{vanderbilt90,
2458 title = "Soft self-consistent pseudopotentials in a generalized
2459 eigenvalue formalism",
2460 author = "David Vanderbilt",
2461 journal = "Phys. Rev. B",
2464 pages = "7892--7895",
2468 doi = "10.1103/PhysRevB.41.7892",
2469 publisher = "American Physical Society",
2470 notes = "vasp pseudopotentials",
2474 title = "Accurate and simple density functional for the
2475 electronic exchange energy: Generalized gradient
2477 author = "John P. Perdew and Wang Yue",
2478 journal = "Phys. Rev. B",
2481 pages = "8800--8802",
2485 doi = "10.1103/PhysRevB.33.8800",
2486 publisher = "American Physical Society",
2487 notes = "rapid communication gga",
2491 title = "Generalized gradient approximations for exchange and
2492 correlation: {A} look backward and forward",
2493 journal = "Physica B: Condensed Matter",
2500 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2501 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2502 author = "John P. Perdew",
2503 notes = "gga overview",
2507 title = "Atoms, molecules, solids, and surfaces: Applications
2508 of the generalized gradient approximation for exchange
2510 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2511 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2512 and Carlos Fiolhais",
2513 journal = "Phys. Rev. B",
2516 pages = "6671--6687",
2520 doi = "10.1103/PhysRevB.46.6671",
2521 publisher = "American Physical Society",
2522 notes = "gga pw91 (as in vasp)",
2525 @Article{baldereschi73,
2526 title = "Mean-Value Point in the Brillouin Zone",
2527 author = "A. Baldereschi",
2528 journal = "Phys. Rev. B",
2531 pages = "5212--5215",
2535 doi = "10.1103/PhysRevB.7.5212",
2536 publisher = "American Physical Society",
2537 notes = "mean value k point",
2541 title = "Ab initio pseudopotential calculations of dopant
2543 journal = "Computational Materials Science",
2550 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2551 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2552 author = "Jing Zhu",
2553 keywords = "TED (transient enhanced diffusion)",
2554 keywords = "Boron dopant",
2555 keywords = "Carbon dopant",
2556 keywords = "Defect",
2557 keywords = "ab initio pseudopotential method",
2558 keywords = "Impurity cluster",
2559 notes = "binding of c to si interstitial, c in si defects",
2563 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2565 title = "Si{C} buried layer formation by ion beam synthesis at
2569 journal = "Applied Physics Letters",
2572 pages = "2646--2648",
2573 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2574 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2575 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2576 ELECTRON MICROSCOPY",
2577 URL = "http://link.aip.org/link/?APL/66/2646/1",
2578 doi = "10.1063/1.113112",
2579 notes = "precipitation mechanism by substitutional carbon, si
2580 self interstitials react with further implanted c",
2584 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2585 Kolodzey and A. Hairie",
2587 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2591 journal = "Journal of Applied Physics",
2594 pages = "4631--4633",
2595 keywords = "silicon compounds; precipitation; localised modes;
2596 semiconductor epitaxial layers; infrared spectra;
2597 Fourier transform spectra; thermal stability;
2599 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2600 doi = "10.1063/1.368703",
2601 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2605 author = "R Jones and B J Coomer and P R Briddon",
2606 title = "Quantum mechanical modelling of defects in
2608 journal = "Journal of Physics: Condensed Matter",
2612 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2614 notes = "ab inito init, vibrational modes, c defect in si",
2618 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2619 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2620 J. E. Greene and S. G. Bishop",
2622 title = "Carbon incorporation pathways and lattice sites in
2623 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2624 molecular-beam epitaxy",
2627 journal = "Journal of Applied Physics",
2630 pages = "5716--5727",
2631 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2632 doi = "10.1063/1.1465122",
2633 notes = "c substitutional incorporation pathway, dft and expt",
2637 title = "Dynamic properties of interstitial carbon and
2638 carbon-carbon pair defects in silicon",
2639 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2641 journal = "Phys. Rev. B",
2644 pages = "2188--2194",
2648 doi = "10.1103/PhysRevB.55.2188",
2649 publisher = "American Physical Society",
2650 notes = "ab initio c in si and di-carbon defect, no formation
2651 energies, different migration barriers and paths",
2655 title = "Interstitial carbon and the carbon-carbon pair in
2656 silicon: Semiempirical electronic-structure
2658 author = "Matthew J. Burnard and Gary G. DeLeo",
2659 journal = "Phys. Rev. B",
2662 pages = "10217--10225",
2666 doi = "10.1103/PhysRevB.47.10217",
2667 publisher = "American Physical Society",
2668 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
2669 carbon defect, formation energies",
2673 title = "Review of atomistic simulations of surface diffusion
2674 and growth on semiconductors",
2675 journal = "Computational Materials Science",
2680 note = "Proceedings of the Workshop on Virtual Molecular Beam
2683 doi = "DOI: 10.1016/0927-0256(96)00030-4",
2684 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
2685 author = "Efthimios Kaxiras",
2686 notes = "might contain c 100 db formation energy, overview md,
2687 tight binding, first principles",
2690 @Article{kaukonen98,
2691 title = "Effect of {N} and {B} doping on the growth of {CVD}
2693 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
2695 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
2696 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
2698 journal = "Phys. Rev. B",
2701 pages = "9965--9970",
2705 doi = "10.1103/PhysRevB.57.9965",
2706 publisher = "American Physical Society",
2707 notes = "constrained conjugate gradient relaxation technique
2712 title = "Correlation between the antisite pair and the ${DI}$
2714 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
2715 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
2717 journal = "Phys. Rev. B",
2724 doi = "10.1103/PhysRevB.67.155203",
2725 publisher = "American Physical Society",
2729 title = "Production and recovery of defects in Si{C} after
2730 irradiation and deformation",
2731 journal = "Journal of Nuclear Materials",
2734 pages = "1803--1808",
2738 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
2739 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
2740 author = "J. Chen and P. Jung and H. Klein",
2744 title = "Accumulation, dynamic annealing and thermal recovery
2745 of ion-beam-induced disorder in silicon carbide",
2746 journal = "Nuclear Instruments and Methods in Physics Research
2747 Section B: Beam Interactions with Materials and Atoms",
2754 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
2755 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
2756 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
2757 keywords = "Amorphization",
2758 keywords = "Irradiation effects",
2759 keywords = "Thermal recovery",
2760 keywords = "Silicon carbide",
2763 @Article{bockstedte03,
2764 title = "Ab initio study of the migration of intrinsic defects
2766 author = "Michel Bockstedte and Alexander Mattausch and Oleg
2768 journal = "Phys. Rev. B",
2775 doi = "10.1103/PhysRevB.68.205201",
2776 publisher = "American Physical Society",
2777 notes = "defect migration in sic",
2781 title = "Theoretical study of vacancy diffusion and
2782 vacancy-assisted clustering of antisites in Si{C}",
2783 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
2785 journal = "Phys. Rev. B",
2792 doi = "10.1103/PhysRevB.68.155208",
2793 publisher = "American Physical Society",