2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
122 notes = "dual implantation, sic prec enhanced by vacancies,
123 precipitation by interstitial and substitutional
124 carbon, both mechanisms explained + refs",
128 title = "Carbon-mediated effects in silicon and in
129 silicon-related materials",
130 journal = "Materials Chemistry and Physics",
137 doi = "DOI: 10.1016/0254-0584(95)01673-I",
138 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
139 author = "W. Skorupa and R. A. Yankov",
140 notes = "review of silicon carbon compound",
144 author = "P. S. de Laplace",
145 title = "Th\'eorie analytique des probabilit\'es",
146 series = "Oeuvres Compl\`etes de Laplace",
148 publisher = "Gauthier-Villars",
152 @Article{mattoni2007,
153 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
154 title = "{Atomistic modeling of brittleness in covalent
156 journal = "Phys. Rev. B",
162 doi = "10.1103/PhysRevB.76.224103",
163 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
164 longe(r)-range-interactions, brittle propagation of
165 fracture, more available potentials, universal energy
166 relation (uer), minimum range model (mrm)",
170 title = "Comparative study of silicon empirical interatomic
172 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
173 journal = "Phys. Rev. B",
176 pages = "2250--2279",
180 doi = "10.1103/PhysRevB.46.2250",
181 publisher = "American Physical Society",
182 notes = "comparison of classical potentials for si",
186 title = "Stress relaxation in $a-Si$ induced by ion
188 author = "H. M. Urbassek M. Koster",
189 journal = "Phys. Rev. B",
192 pages = "11219--11224",
196 doi = "10.1103/PhysRevB.62.11219",
197 publisher = "American Physical Society",
198 notes = "virial derivation for 3-body tersoff potential",
201 @Article{breadmore99,
202 title = "Direct simulation of ion-beam-induced stressing and
203 amorphization of silicon",
204 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
205 journal = "Phys. Rev. B",
208 pages = "12610--12616",
212 doi = "10.1103/PhysRevB.60.12610",
213 publisher = "American Physical Society",
214 notes = "virial derivation for 3-body tersoff potential",
218 title = "First-Principles Calculation of Stress",
219 author = "O. H. Nielsen and Richard M. Martin",
220 journal = "Phys. Rev. Lett.",
227 doi = "10.1103/PhysRevLett.50.697",
228 publisher = "American Physical Society",
229 notes = "generalization of virial theorem",
233 title = "Quantum-mechanical theory of stress and force",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. B",
238 pages = "3780--3791",
242 doi = "10.1103/PhysRevB.32.3780",
243 publisher = "American Physical Society",
244 notes = "dft virial stress and forces",
248 author = "Henri Moissan",
249 title = "Nouvelles recherches sur la météorité de Cañon
251 journal = "Comptes rendus de l'Académie des Sciences",
258 author = "Y. S. Park",
259 title = "Si{C} Materials and Devices",
260 publisher = "Academic Press",
261 address = "San Diego",
266 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
267 Calvin H. Carter Jr. and D. Asbury",
268 title = "Si{C} Seeded Boule Growth",
269 journal = "Materials Science Forum",
273 notes = "modified lely process, micropipes",
277 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
278 Thermodynamical Properties of Lennard-Jones Molecules",
279 author = "Loup Verlet",
280 journal = "Phys. Rev.",
286 doi = "10.1103/PhysRev.159.98",
287 publisher = "American Physical Society",
288 notes = "velocity verlet integration algorithm equation of
292 @Article{berendsen84,
293 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
294 Gunsteren and A. DiNola and J. R. Haak",
296 title = "Molecular dynamics with coupling to an external bath",
299 journal = "J. Chem. Phys.",
302 pages = "3684--3690",
303 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
304 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
305 URL = "http://link.aip.org/link/?JCP/81/3684/1",
306 doi = "10.1063/1.448118",
307 notes = "berendsen thermostat barostat",
311 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
313 title = "Molecular dynamics determination of defect energetics
314 in beta -Si{C} using three representative empirical
316 journal = "Modell. Simul. Mater. Sci. Eng.",
320 URL = "http://stacks.iop.org/0965-0393/3/615",
321 notes = "comparison of tersoff, pearson and eam for defect
322 energetics in sic; (m)eam parameters for sic",
327 title = "Relationship between the embedded-atom method and
329 author = "Donald W. Brenner",
330 journal = "Phys. Rev. Lett.",
337 doi = "10.1103/PhysRevLett.63.1022",
338 publisher = "American Physical Society",
339 notes = "relation of tersoff and eam potential",
343 title = "Molecular-dynamics study of self-interstitials in
345 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
346 journal = "Phys. Rev. B",
349 pages = "9552--9558",
353 doi = "10.1103/PhysRevB.35.9552",
354 publisher = "American Physical Society",
355 notes = "selft-interstitials in silicon, stillinger-weber,
356 calculation of defect formation energy, defect
361 title = "Extended interstitials in silicon and germanium",
362 author = "H. R. Schober",
363 journal = "Phys. Rev. B",
366 pages = "13013--13015",
370 doi = "10.1103/PhysRevB.39.13013",
371 publisher = "American Physical Society",
372 notes = "stillinger-weber silicon 110 stable and metastable
373 dumbbell configuration",
377 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
378 Defect accumulation, topological features, and
380 author = "F. Gao and W. J. Weber",
381 journal = "Phys. Rev. B",
388 doi = "10.1103/PhysRevB.66.024106",
389 publisher = "American Physical Society",
390 notes = "sic intro, si cascade in 3c-sic, amorphization,
391 tersoff modified, pair correlation of amorphous sic, md
395 @Article{devanathan98,
396 title = "Computer simulation of a 10 ke{V} Si displacement
398 journal = "Nucl. Instrum. Methods Phys. Res. B",
404 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
405 author = "R. Devanathan and W. J. Weber and T. Diaz de la
407 notes = "modified tersoff short range potential, ab initio
411 @Article{devanathan98_2,
412 title = "Displacement threshold energies in [beta]-Si{C}",
413 journal = "J. Nucl. Mater.",
419 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
420 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
422 notes = "modified tersoff, ab initio, combined ab initio
426 @Article{kitabatake00,
427 title = "Si{C}/Si heteroepitaxial growth",
428 author = "M. Kitabatake",
429 journal = "Thin Solid Films",
434 notes = "md simulation, sic si heteroepitaxy, mbe",
438 title = "Intrinsic point defects in crystalline silicon:
439 Tight-binding molecular dynamics studies of
440 self-diffusion, interstitial-vacancy recombination, and
442 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
444 journal = "Phys. Rev. B",
447 pages = "14279--14289",
451 doi = "10.1103/PhysRevB.55.14279",
452 publisher = "American Physical Society",
453 notes = "si self interstitial, diffusion, tbmd",
457 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
460 title = "A kinetic Monte--Carlo study of the effective
461 diffusivity of the silicon self-interstitial in the
462 presence of carbon and boron",
465 journal = "J. Appl. Phys.",
468 pages = "1963--1967",
469 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
470 CARBON ADDITIONS; BORON ADDITIONS; elemental
471 semiconductors; self-diffusion",
472 URL = "http://link.aip.org/link/?JAP/84/1963/1",
473 doi = "10.1063/1.368328",
474 notes = "kinetic monte carlo of si self interstitial
479 title = "Barrier to Migration of the Silicon
481 author = "Y. Bar-Yam and J. D. Joannopoulos",
482 journal = "Phys. Rev. Lett.",
485 pages = "1129--1132",
489 doi = "10.1103/PhysRevLett.52.1129",
490 publisher = "American Physical Society",
491 notes = "si self-interstitial migration barrier",
494 @Article{bar-yam84_2,
495 title = "Electronic structure and total-energy migration
496 barriers of silicon self-interstitials",
497 author = "Y. Bar-Yam and J. D. Joannopoulos",
498 journal = "Phys. Rev. B",
501 pages = "1844--1852",
505 doi = "10.1103/PhysRevB.30.1844",
506 publisher = "American Physical Society",
510 title = "First-principles calculations of self-diffusion
511 constants in silicon",
512 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
513 and D. B. Laks and W. Andreoni and S. T. Pantelides",
514 journal = "Phys. Rev. Lett.",
517 pages = "2435--2438",
521 doi = "10.1103/PhysRevLett.70.2435",
522 publisher = "American Physical Society",
523 notes = "si self int diffusion by ab initio md, formation
524 entropy calculations",
528 title = "Tight-binding theory of native point defects in
530 author = "L. Colombo",
531 journal = "Annu. Rev. Mater. Res.",
536 doi = "10.1146/annurev.matsci.32.111601.103036",
537 publisher = "Annual Reviews",
538 notes = "si self interstitial, tbmd, virial stress",
541 @Article{al-mushadani03,
542 title = "Free-energy calculations of intrinsic point defects in
544 author = "O. K. Al-Mushadani and R. J. Needs",
545 journal = "Phys. Rev. B",
552 doi = "10.1103/PhysRevB.68.235205",
553 publisher = "American Physical Society",
554 notes = "formation energies of intrinisc point defects in
555 silicon, si self interstitials, free energy",
558 @Article{goedecker02,
559 title = "A Fourfold Coordinated Point Defect in Silicon",
560 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
561 journal = "Phys. Rev. Lett.",
568 doi = "10.1103/PhysRevLett.88.235501",
569 publisher = "American Physical Society",
570 notes = "first time ffcd, fourfold coordinated point defect in
575 title = "Ab initio molecular dynamics simulation of
576 self-interstitial diffusion in silicon",
577 author = "Beat Sahli and Wolfgang Fichtner",
578 journal = "Phys. Rev. B",
585 doi = "10.1103/PhysRevB.72.245210",
586 publisher = "American Physical Society",
587 notes = "si self int, diffusion, barrier height, voronoi
592 title = "Ab initio calculations of the interaction between
593 native point defects in silicon",
594 journal = "Mater. Sci. Eng., B",
599 note = "EMRS 2005, Symposium D - Materials Science and Device
600 Issues for Future Technologies",
602 doi = "DOI: 10.1016/j.mseb.2005.08.072",
603 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
604 author = "G. Hobler and G. Kresse",
605 notes = "vasp intrinsic si defect interaction study, capture
610 title = "Ab initio study of self-diffusion in silicon over a
611 wide temperature range: Point defect states and
612 migration mechanisms",
613 author = "Shangyi Ma and Shaoqing Wang",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.81.193203",
622 publisher = "American Physical Society",
623 notes = "si self interstitial diffusion + refs",
627 title = "Atomistic simulations on the thermal stability of the
628 antisite pair in 3{C}- and 4{H}-Si{C}",
629 author = "M. Posselt and F. Gao and W. J. Weber",
630 journal = "Phys. Rev. B",
637 doi = "10.1103/PhysRevB.73.125206",
638 publisher = "American Physical Society",
642 title = "Correlation between self-diffusion in Si and the
643 migration mechanisms of vacancies and
644 self-interstitials: An atomistic study",
645 author = "M. Posselt and F. Gao and H. Bracht",
646 journal = "Phys. Rev. B",
653 doi = "10.1103/PhysRevB.78.035208",
654 publisher = "American Physical Society",
655 notes = "si self-interstitial and vacancy diffusion, stillinger
660 title = "Ab initio and empirical-potential studies of defect
661 properties in $3{C}-Si{C}$",
662 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
664 journal = "Phys. Rev. B",
671 doi = "10.1103/PhysRevB.64.245208",
672 publisher = "American Physical Society",
673 notes = "defects in 3c-sic",
677 title = "Empirical potential approach for defect properties in
679 journal = "Nucl. Instrum. Methods Phys. Res. B",
686 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
687 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
688 author = "Fei Gao and William J. Weber",
689 keywords = "Empirical potential",
690 keywords = "Defect properties",
691 keywords = "Silicon carbide",
692 keywords = "Computer simulation",
693 notes = "sic potential, brenner type, like erhart/albe",
697 title = "Atomistic study of intrinsic defect migration in
699 author = "Fei Gao and William J. Weber and M. Posselt and V.
701 journal = "Phys. Rev. B",
708 doi = "10.1103/PhysRevB.69.245205",
709 publisher = "American Physical Society",
710 notes = "defect migration in sic",
714 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
717 title = "Ab Initio atomic simulations of antisite pair recovery
718 in cubic silicon carbide",
721 journal = "Appl. Phys. Lett.",
727 keywords = "ab initio calculations; silicon compounds; antisite
728 defects; wide band gap semiconductors; molecular
729 dynamics method; density functional theory;
730 electron-hole recombination; photoluminescence;
731 impurities; diffusion",
732 URL = "http://link.aip.org/link/?APL/90/221915/1",
733 doi = "10.1063/1.2743751",
736 @Article{mattoni2002,
737 title = "Self-interstitial trapping by carbon complexes in
738 crystalline silicon",
739 author = "A. Mattoni and F. Bernardini and L. Colombo",
740 journal = "Phys. Rev. B",
747 doi = "10.1103/PhysRevB.66.195214",
748 publisher = "American Physical Society",
749 notes = "c in c-si, diffusion, interstitial configuration +
750 links, interaction of carbon and silicon interstitials,
751 tersoff suitability",
755 title = "Calculations of Silicon Self-Interstitial Defects",
756 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
758 journal = "Phys. Rev. Lett.",
761 pages = "2351--2354",
765 doi = "10.1103/PhysRevLett.83.2351",
766 publisher = "American Physical Society",
767 notes = "nice images of the defects, si defect overview +
772 title = "Identification of the migration path of interstitial
774 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
775 journal = "Phys. Rev. B",
778 pages = "7439--7442",
782 doi = "10.1103/PhysRevB.50.7439",
783 publisher = "American Physical Society",
784 notes = "carbon interstitial migration path shown, 001 c-si
789 title = "Theory of carbon-carbon pairs in silicon",
790 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
791 journal = "Phys. Rev. B",
794 pages = "9845--9850",
798 doi = "10.1103/PhysRevB.58.9845",
799 publisher = "American Physical Society",
800 notes = "c_i c_s pair configuration, theoretical results",
804 title = "Bistable interstitial-carbon--substitutional-carbon
806 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
808 journal = "Phys. Rev. B",
811 pages = "5765--5783",
815 doi = "10.1103/PhysRevB.42.5765",
816 publisher = "American Physical Society",
817 notes = "c_i c_s pair configuration, experimental results",
821 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
822 Shifeng Lu and Xiang-Yang Liu",
824 title = "Ab initio modeling and experimental study of {C}--{B}
828 journal = "Appl. Phys. Lett.",
832 keywords = "silicon; boron; carbon; elemental semiconductors;
833 impurity-defect interactions; ab initio calculations;
834 secondary ion mass spectra; diffusion; interstitials",
835 URL = "http://link.aip.org/link/?APL/80/52/1",
836 doi = "10.1063/1.1430505",
837 notes = "c-c 100 split, lower as a and b states of capaz",
841 title = "Ab initio investigation of carbon-related defects in
843 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
845 journal = "Phys. Rev. B",
848 pages = "12554--12557",
852 doi = "10.1103/PhysRevB.47.12554",
853 publisher = "American Physical Society",
854 notes = "c interstitials in crystalline silicon",
858 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
860 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
861 Sokrates T. Pantelides",
862 journal = "Phys. Rev. Lett.",
865 pages = "1814--1817",
869 doi = "10.1103/PhysRevLett.52.1814",
870 publisher = "American Physical Society",
871 notes = "microscopic theory diffusion silicon dft migration
876 title = "Unified Approach for Molecular Dynamics and
877 Density-Functional Theory",
878 author = "R. Car and M. Parrinello",
879 journal = "Phys. Rev. Lett.",
882 pages = "2471--2474",
886 doi = "10.1103/PhysRevLett.55.2471",
887 publisher = "American Physical Society",
888 notes = "car parrinello method, dft and md",
892 title = "Short-range order, bulk moduli, and physical trends in
893 c-$Si1-x$$Cx$ alloys",
894 author = "P. C. Kelires",
895 journal = "Phys. Rev. B",
898 pages = "8784--8787",
902 doi = "10.1103/PhysRevB.55.8784",
903 publisher = "American Physical Society",
904 notes = "c strained si, montecarlo md, bulk moduli, next
909 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
910 Application to the $Si1-x-yGexCy$ System",
911 author = "P. C. Kelires",
912 journal = "Phys. Rev. Lett.",
915 pages = "1114--1117",
919 doi = "10.1103/PhysRevLett.75.1114",
920 publisher = "American Physical Society",
921 notes = "mc md, strain compensation in si ge by c insertion",
925 title = "Low temperature electron irradiation of silicon
927 journal = "Solid State Communications",
934 doi = "DOI: 10.1016/0038-1098(70)90074-8",
935 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
936 author = "A. R. Bean and R. C. Newman",
940 author = "F. Durand and J. Duby",
941 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
942 title = "Carbon solubility in solid and liquid silicon—{A}
943 review with reference to eutectic equilibrium",
944 journal = "Journal of Phase Equilibria",
945 publisher = "Springer New York",
947 keyword = "Chemistry and Materials Science",
951 URL = "http://dx.doi.org/10.1361/105497199770335956",
952 note = "10.1361/105497199770335956",
954 notes = "better c solubility limit in silicon",
958 title = "{EPR} Observation of the Isolated Interstitial Carbon
960 author = "G. D. Watkins and K. L. Brower",
961 journal = "Phys. Rev. Lett.",
964 pages = "1329--1332",
968 doi = "10.1103/PhysRevLett.36.1329",
969 publisher = "American Physical Society",
970 notes = "epr observations of 100 interstitial carbon atom in
975 title = "{EPR} identification of the single-acceptor state of
976 interstitial carbon in silicon",
977 author = "L. W. Song and G. D. Watkins",
978 journal = "Phys. Rev. B",
981 pages = "5759--5764",
985 doi = "10.1103/PhysRevB.42.5759",
986 publisher = "American Physical Society",
987 notes = "carbon diffusion in silicon",
991 author = "A K Tipping and R C Newman",
992 title = "The diffusion coefficient of interstitial carbon in
994 journal = "Semicond. Sci. Technol.",
998 URL = "http://stacks.iop.org/0268-1242/2/315",
1000 notes = "diffusion coefficient of carbon interstitials in
1005 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1008 title = "Annealing behavior of Me{V} implanted carbon in
1012 journal = "Journal of Applied Physics",
1015 pages = "3815--3820",
1016 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1017 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1019 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1020 doi = "10.1063/1.354474",
1021 notes = "c at interstitial location for rt implantation in si",
1025 title = "Carbon incorporation into Si at high concentrations by
1026 ion implantation and solid phase epitaxy",
1027 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1028 Picraux and J. K. Watanabe and J. W. Mayer",
1029 journal = "J. Appl. Phys.",
1034 doi = "10.1063/1.360806",
1035 notes = "strained silicon, carbon supersaturation",
1038 @Article{laveant2002,
1039 title = "Epitaxy of carbon-rich silicon with {MBE}",
1040 journal = "Mater. Sci. Eng., B",
1046 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1047 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1048 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1050 notes = "low c in si, tensile stress to compensate compressive
1051 stress, avoid sic precipitation",
1055 title = "The formation of swirl defects in silicon by
1056 agglomeration of self-interstitials",
1057 journal = "Journal of Crystal Growth",
1064 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1065 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1066 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1067 notes = "b-swirl: si + c interstitial agglomerates, c-si
1072 title = "Microdefects in silicon and their relation to point
1074 journal = "Journal of Crystal Growth",
1081 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1082 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1083 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1084 notes = "swirl review",
1088 author = "P. Werner and S. Eichler and G. Mariani and R.
1089 K{\"{o}}gler and W. Skorupa",
1090 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1091 silicon by transmission electron microscopy",
1094 journal = "Appl. Phys. Lett.",
1098 keywords = "silicon; ion implantation; carbon; crystal defects;
1099 transmission electron microscopy; annealing; positron
1100 annihilation; secondary ion mass spectroscopy; buried
1101 layers; precipitation",
1102 URL = "http://link.aip.org/link/?APL/70/252/1",
1103 doi = "10.1063/1.118381",
1104 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1108 @InProceedings{werner96,
1109 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1111 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1112 International Conference on",
1113 title = "{TEM} investigation of {C}-Si defects in carbon
1120 doi = "10.1109/IIT.1996.586497",
1122 notes = "c-si agglomerates dumbbells",
1126 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1129 title = "Carbon diffusion in silicon",
1132 journal = "Appl. Phys. Lett.",
1135 pages = "2465--2467",
1136 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1137 secondary ion mass spectra; semiconductor epitaxial
1138 layers; annealing; impurity-defect interactions;
1139 impurity distribution",
1140 URL = "http://link.aip.org/link/?APL/73/2465/1",
1141 doi = "10.1063/1.122483",
1142 notes = "c diffusion in si, kick out mechnism",
1146 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1148 title = "Self-interstitial enhanced carbon diffusion in
1152 journal = "Applied Physics Letters",
1156 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1157 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1158 TEMPERATURE; IMPURITIES",
1159 URL = "http://link.aip.org/link/?APL/45/268/1",
1160 doi = "10.1063/1.95167",
1161 notes = "c diffusion due to si self-interstitials",
1165 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1168 title = "Characterization of SiGe/Si heterostructures formed by
1169 Ge[sup + ] and {C}[sup + ] implantation",
1172 journal = "Applied Physics Letters",
1175 pages = "2345--2347",
1176 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1177 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1178 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1179 EPITAXY; CARBON IONS; GERMANIUM IONS",
1180 URL = "http://link.aip.org/link/?APL/57/2345/1",
1181 doi = "10.1063/1.103888",
1185 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1186 Doyle and S. T. Picraux and J. W. Mayer",
1188 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1191 journal = "Applied Physics Letters",
1194 pages = "2786--2788",
1195 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1196 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1197 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1198 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1199 EPITAXY; AMORPHIZATION",
1200 URL = "http://link.aip.org/link/?APL/63/2786/1",
1201 doi = "10.1063/1.110334",
1205 author = {M. S. Goorsky and S. S. Iyer and K. Eberl and F. Legoues and J. Angilello and F. Cardone},
1207 title = {Thermal stability of Si[sub 1 - x]C[sub x]/Si strained layer superlattices},
1210 journal = {Applied Physics Letters},
1213 pages = {2758-2760},
1214 keywords = {SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS},
1215 url = {http://link.aip.org/link/?APL/60/2758/1},
1216 doi = {10.1063/1.106868}
1220 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1221 Picraux and J. K. Watanabe and J. W. Mayer",
1223 title = "Precipitation and relaxation in strained Si[sub 1 -
1224 y]{C}[sub y]/Si heterostructures",
1227 journal = "J. Appl. Phys.",
1230 pages = "3656--3668",
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1232 URL = "http://link.aip.org/link/?JAP/76/3656/1",
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1234 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1235 precipitation by substitutional carbon, coherent prec,
1236 coherent to incoherent transition strain vs interface
1241 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1244 title = "Investigation of the high temperature behavior of
1245 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1248 journal = "J. Appl. Phys.",
1251 pages = "1934--1937",
1252 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1253 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1254 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1255 TEMPERATURE RANGE 04001000 K",
1256 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1257 doi = "10.1063/1.358826",
1261 title = "Prospects for device implementation of wide band gap
1263 author = "J. H. Edgar",
1264 journal = "J. Mater. Res.",
1269 doi = "10.1557/JMR.1992.0235",
1270 notes = "properties wide band gap semiconductor, sic
1274 @Article{zirkelbach2007,
1275 title = "Monte Carlo simulation study of a selforganisation
1276 process leading to ordered precipitate structures",
1277 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1279 journal = "Nucl. Instr. and Meth. B",
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1291 @Article{zirkelbach2006,
1292 title = "Monte-Carlo simulation study of the self-organization
1293 of nanometric amorphous precipitates in regular arrays
1294 during ion irradiation",
1295 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1297 journal = "Nucl. Instr. and Meth. B",
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1309 @Article{zirkelbach2005,
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1313 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1315 journal = "Comp. Mater. Sci.",
1322 doi = "doi:10.1016/j.commatsci.2004.12.016",
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1327 @Article{zirkelbach09,
1328 title = "Molecular dynamics simulation of defect formation and
1329 precipitation in heavily carbon doped silicon",
1330 journal = "Mater. Sci. Eng., B",
1335 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1336 Silicon Materials Research for Electronic and
1337 Photovoltaic Applications",
1339 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1340 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
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1343 keywords = "Silicon",
1344 keywords = "Carbon",
1345 keywords = "Silicon carbide",
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1347 keywords = "Defect formation",
1348 keywords = "Molecular dynamics simulations",
1351 @Article{zirkelbach10,
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1353 classical potentials and first-principles methods",
1354 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1355 K. N. Lindner and W. G. Schmidt and E. Rauls",
1356 journal = "Phys. Rev. B",
1363 doi = "10.1103/PhysRevB.82.094110",
1364 publisher = "American Physical Society",
1367 @Article{zirkelbach11a,
1368 title = "First principles study of defects in carbon implanted
1370 journal = "to be published",
1375 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1376 and W. G. Schmidt and E. Rauls",
1379 @Article{zirkelbach11b,
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1386 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1387 K. N. Lindner and W. G. Schmidt and E. Rauls",
1391 author = "J. K. N. Lindner and A. Frohnwieser and B.
1392 Rauschenbach and B. Stritzker",
1393 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1395 journal = "MRS Online Proceedings Library",
1400 doi = "10.1557/PROC-354-171",
1401 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1402 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1403 notes = "first time ibs at moderate temperatures",
1407 title = "Formation of buried epitaxial silicon carbide layers
1408 in silicon by ion beam synthesis",
1409 journal = "Materials Chemistry and Physics",
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1417 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1418 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1419 Götz and A. Frohnwieser and B. Rauschenbach and B.
1421 notes = "dose window",
1424 @Article{calcagno96,
1425 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1427 journal = "Nuclear Instruments and Methods in Physics Research
1428 Section B: Beam Interactions with Materials and Atoms",
1433 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1434 New Trends in Ion Beam Processing of Materials",
1436 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1437 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1438 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1439 Grimaldi and P. Musumeci",
1440 notes = "dose window, graphitic bonds",
1444 title = "Mechanisms of Si{C} Formation in the Ion Beam
1445 Synthesis of 3{C}-Si{C} Layers in Silicon",
1446 journal = "Materials Science Forum",
1451 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1452 URL = "http://www.scientific.net/MSF.264-268.215",
1453 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1454 notes = "intermediate temperature for sharp interface + good
1459 title = "Controlling the density distribution of Si{C}
1460 nanocrystals for the ion beam synthesis of buried Si{C}
1462 journal = "Nucl. Instrum. Methods Phys. Res. B",
1469 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1470 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1471 author = "J. K. N. Lindner and B. Stritzker",
1472 notes = "two-step implantation process",
1475 @Article{lindner99_2,
1476 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1478 journal = "Nucl. Instrum. Methods Phys. Res. B",
1484 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1485 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1486 author = "J. K. N. Lindner and B. Stritzker",
1487 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1491 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1492 Basic physical processes",
1493 journal = "Nucl. Instrum. Methods Phys. Res. B",
1500 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1501 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1502 author = "J{\"{o}}rg K. N. Lindner",
1506 title = "High-dose carbon implantations into silicon:
1507 fundamental studies for new technological tricks",
1508 author = "J. K. N. Lindner",
1509 journal = "Appl. Phys. A",
1513 doi = "10.1007/s00339-002-2062-8",
1514 notes = "ibs, burried sic layers",
1518 title = "On the balance between ion beam induced nanoparticle
1519 formation and displacive precipitate resolution in the
1521 journal = "Mater. Sci. Eng., C",
1526 note = "Current Trends in Nanoscience - from Materials to
1529 doi = "DOI: 10.1016/j.msec.2005.09.099",
1530 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1531 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1533 notes = "c int diffusion barrier",
1537 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1538 application in buffer layer for Ga{N} epitaxial
1540 journal = "Applied Surface Science",
1545 note = "APHYS'03 Special Issue",
1547 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1548 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1549 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1550 and S. Nishio and K. Yasuda and Y. Ishigami",
1551 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1554 @Article{yamamoto04,
1555 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1556 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1557 implantation into Si(1 1 1) substrate",
1558 journal = "Journal of Crystal Growth",
1563 note = "Proceedings of the 11th Biennial (US) Workshop on
1564 Organometallic Vapor Phase Epitaxy (OMVPE)",
1566 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1567 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1568 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1569 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1570 notes = "gan on 3c-sic",
1574 title = "Substrates for gallium nitride epitaxy",
1575 journal = "Materials Science and Engineering: R: Reports",
1582 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1583 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1584 author = "L. Liu and J. H. Edgar",
1585 notes = "gan substrates",
1588 @Article{takeuchi91,
1589 title = "Growth of single crystalline Ga{N} film on Si
1590 substrate using 3{C}-Si{C} as an intermediate layer",
1591 journal = "Journal of Crystal Growth",
1598 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1599 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1600 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1601 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1602 notes = "gan on 3c-sic (first time?)",
1606 author = "B. J. Alder and T. E. Wainwright",
1607 title = "Phase Transition for a Hard Sphere System",
1610 journal = "J. Chem. Phys.",
1613 pages = "1208--1209",
1614 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1615 doi = "10.1063/1.1743957",
1619 author = "B. J. Alder and T. E. Wainwright",
1620 title = "Studies in Molecular Dynamics. {I}. General Method",
1623 journal = "J. Chem. Phys.",
1627 URL = "http://link.aip.org/link/?JCP/31/459/1",
1628 doi = "10.1063/1.1730376",
1631 @Article{tersoff_si1,
1632 title = "New empirical model for the structural properties of
1634 author = "J. Tersoff",
1635 journal = "Phys. Rev. Lett.",
1642 doi = "10.1103/PhysRevLett.56.632",
1643 publisher = "American Physical Society",
1646 @Article{tersoff_si2,
1647 title = "New empirical approach for the structure and energy of
1649 author = "J. Tersoff",
1650 journal = "Phys. Rev. B",
1653 pages = "6991--7000",
1657 doi = "10.1103/PhysRevB.37.6991",
1658 publisher = "American Physical Society",
1661 @Article{tersoff_si3,
1662 title = "Empirical interatomic potential for silicon with
1663 improved elastic properties",
1664 author = "J. Tersoff",
1665 journal = "Phys. Rev. B",
1668 pages = "9902--9905",
1672 doi = "10.1103/PhysRevB.38.9902",
1673 publisher = "American Physical Society",
1677 title = "Empirical Interatomic Potential for Carbon, with
1678 Applications to Amorphous Carbon",
1679 author = "J. Tersoff",
1680 journal = "Phys. Rev. Lett.",
1683 pages = "2879--2882",
1687 doi = "10.1103/PhysRevLett.61.2879",
1688 publisher = "American Physical Society",
1692 title = "Modeling solid-state chemistry: Interatomic potentials
1693 for multicomponent systems",
1694 author = "J. Tersoff",
1695 journal = "Phys. Rev. B",
1698 pages = "5566--5568",
1702 doi = "10.1103/PhysRevB.39.5566",
1703 publisher = "American Physical Society",
1707 title = "Carbon defects and defect reactions in silicon",
1708 author = "J. Tersoff",
1709 journal = "Phys. Rev. Lett.",
1712 pages = "1757--1760",
1716 doi = "10.1103/PhysRevLett.64.1757",
1717 publisher = "American Physical Society",
1721 title = "Point defects and dopant diffusion in silicon",
1722 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1723 journal = "Rev. Mod. Phys.",
1730 doi = "10.1103/RevModPhys.61.289",
1731 publisher = "American Physical Society",
1735 title = "Silicon carbide: synthesis and processing",
1736 journal = "Nucl. Instrum. Methods Phys. Res. B",
1741 note = "Radiation Effects in Insulators",
1743 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1744 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1745 author = "W. Wesch",
1749 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1750 Palmour and J. A. Edmond",
1751 journal = "Proceedings of the IEEE",
1752 title = "Thin film deposition and microelectronic and
1753 optoelectronic device fabrication and characterization
1754 in monocrystalline alpha and beta silicon carbide",
1760 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1761 diode;SiC;dry etching;electrical
1762 contacts;etching;impurity incorporation;optoelectronic
1763 device fabrication;solid-state devices;surface
1764 chemistry;Schottky effect;Schottky gate field effect
1765 transistors;Schottky-barrier
1766 diodes;etching;heterojunction bipolar
1767 transistors;insulated gate field effect
1768 transistors;light emitting diodes;semiconductor
1769 materials;semiconductor thin films;silicon compounds;",
1770 doi = "10.1109/5.90132",
1772 notes = "sic growth methods",
1776 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1777 Lin and B. Sverdlov and M. Burns",
1779 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1780 ZnSe-based semiconductor device technologies",
1783 journal = "J. Appl. Phys.",
1786 pages = "1363--1398",
1787 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1788 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1789 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1791 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1792 doi = "10.1063/1.358463",
1793 notes = "sic intro, properties",
1797 author = "Noch Unbekannt",
1798 title = "How to find references",
1799 journal = "Journal of Applied References",
1806 title = "Atomistic simulation of thermomechanical properties of
1808 author = "Meijie Tang and Sidney Yip",
1809 journal = "Phys. Rev. B",
1812 pages = "15150--15159",
1815 doi = "10.1103/PhysRevB.52.15150",
1816 notes = "modified tersoff, scale cutoff with volume, promising
1817 tersoff reparametrization",
1818 publisher = "American Physical Society",
1822 title = "Silicon carbide as a new {MEMS} technology",
1823 journal = "Sensors and Actuators A: Physical",
1829 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1830 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1831 author = "Pasqualina M. Sarro",
1833 keywords = "Silicon carbide",
1834 keywords = "Micromachining",
1835 keywords = "Mechanical stress",
1839 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1840 semiconductor for high-temperature applications: {A}
1842 journal = "Solid-State Electronics",
1845 pages = "1409--1422",
1848 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1849 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1850 author = "J. B. Casady and R. W. Johnson",
1851 notes = "sic intro",
1854 @Article{giancarli98,
1855 title = "Design requirements for Si{C}/Si{C} composites
1856 structural material in fusion power reactor blankets",
1857 journal = "Fusion Engineering and Design",
1863 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1864 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1865 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1866 Marois and N. B. Morley and J. F. Salavy",
1870 title = "Electrical and optical characterization of Si{C}",
1871 journal = "Physica B: Condensed Matter",
1877 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1878 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1879 author = "G. Pensl and W. J. Choyke",
1883 title = "Investigation of growth processes of ingots of silicon
1884 carbide single crystals",
1885 journal = "J. Cryst. Growth",
1890 notes = "modified lely process",
1892 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1893 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1894 author = "Yu. M. Tairov and V. F. Tsvetkov",
1898 title = "General principles of growing large-size single
1899 crystals of various silicon carbide polytypes",
1900 journal = "Journal of Crystal Growth",
1907 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1908 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1909 author = "Yu.M. Tairov and V. F. Tsvetkov",
1913 title = "Si{C} boule growth by sublimation vapor transport",
1914 journal = "Journal of Crystal Growth",
1921 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1922 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1923 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1924 R. H. Hopkins and W. J. Choyke",
1928 title = "Growth of large Si{C} single crystals",
1929 journal = "Journal of Crystal Growth",
1936 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1937 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1938 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1939 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1944 title = "Control of polytype formation by surface energy
1945 effects during the growth of Si{C} monocrystals by the
1946 sublimation method",
1947 journal = "Journal of Crystal Growth",
1954 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1955 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1956 author = "R. A. Stein and P. Lanig",
1957 notes = "6h and 4h, sublimation technique",
1961 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1964 title = "Production of large-area single-crystal wafers of
1965 cubic Si{C} for semiconductor devices",
1968 journal = "Appl. Phys. Lett.",
1972 keywords = "silicon carbides; layers; chemical vapor deposition;
1974 URL = "http://link.aip.org/link/?APL/42/460/1",
1975 doi = "10.1063/1.93970",
1976 notes = "cvd of 3c-sic on si, sic buffer layer",
1980 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1981 and Hiroyuki Matsunami",
1983 title = "Epitaxial growth and electric characteristics of cubic
1987 journal = "J. Appl. Phys.",
1990 pages = "4889--4893",
1991 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1992 doi = "10.1063/1.338355",
1993 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1998 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2000 title = "Growth and Characterization of Cubic Si{C}
2001 Single-Crystal Films on Si",
2004 journal = "Journal of The Electrochemical Society",
2007 pages = "1558--1565",
2008 keywords = "semiconductor materials; silicon compounds; carbon
2009 compounds; crystal morphology; electron mobility",
2010 URL = "http://link.aip.org/link/?JES/134/1558/1",
2011 doi = "10.1149/1.2100708",
2012 notes = "blue light emitting diodes (led)",
2015 @Article{powell87_2,
2016 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2017 C. M. Chorey and T. T. Cheng and P. Pirouz",
2019 title = "Improved beta-Si{C} heteroepitaxial films using
2020 off-axis Si substrates",
2023 journal = "Applied Physics Letters",
2027 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2028 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2029 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2030 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2031 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2032 URL = "http://link.aip.org/link/?APL/51/823/1",
2033 doi = "10.1063/1.98824",
2034 notes = "improved sic on off-axis si substrates, reduced apbs",
2038 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2039 journal = "Journal of Crystal Growth",
2046 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2047 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2048 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2050 notes = "step-controlled epitaxy model",
2054 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2055 and Hiroyuki Matsunami",
2056 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2060 journal = "J. Appl. Phys.",
2064 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2065 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2067 URL = "http://link.aip.org/link/?JAP/73/726/1",
2068 doi = "10.1063/1.353329",
2069 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2072 @Article{powell90_2,
2073 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2074 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2075 Yoganathan and J. Yang and P. Pirouz",
2077 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2078 vicinal (0001) 6{H}-Si{C} wafers",
2081 journal = "Applied Physics Letters",
2084 pages = "1442--1444",
2085 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2086 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2087 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2088 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2089 URL = "http://link.aip.org/link/?APL/56/1442/1",
2090 doi = "10.1063/1.102492",
2091 notes = "cvd of 6h-sic on 6h-sic",
2095 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2097 title = "Chemical vapor deposition and characterization of
2098 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2102 journal = "Journal of Applied Physics",
2105 pages = "2672--2679",
2106 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2107 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2108 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2109 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2110 PHASE EPITAXY; CRYSTAL ORIENTATION",
2111 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2112 doi = "10.1063/1.341608",
2116 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2117 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2118 Yoganathan and J. Yang and P. Pirouz",
2120 title = "Growth of improved quality 3{C}-Si{C} films on
2121 6{H}-Si{C} substrates",
2124 journal = "Appl. Phys. Lett.",
2127 pages = "1353--1355",
2128 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2129 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2130 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2132 URL = "http://link.aip.org/link/?APL/56/1353/1",
2133 doi = "10.1063/1.102512",
2134 notes = "cvd of 3c-sic on 6h-sic",
2138 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2139 Rozgonyi and K. L. More",
2141 title = "An examination of double positioning boundaries and
2142 interface misfit in beta-Si{C} films on alpha-Si{C}
2146 journal = "Journal of Applied Physics",
2149 pages = "2645--2650",
2150 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2151 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2152 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2153 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2154 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2155 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2156 doi = "10.1063/1.341004",
2160 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2161 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2162 and W. J. Choyke and L. Clemen and M. Yoganathan",
2164 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2165 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2168 journal = "Applied Physics Letters",
2172 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2173 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2174 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2175 URL = "http://link.aip.org/link/?APL/59/333/1",
2176 doi = "10.1063/1.105587",
2180 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2181 Thokala and M. J. Loboda",
2183 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2184 films on 6{H}-Si{C} by chemical vapor deposition from
2188 journal = "J. Appl. Phys.",
2191 pages = "1271--1273",
2192 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2193 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2195 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2196 doi = "10.1063/1.360368",
2197 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2201 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2202 properties of its p-n junction",
2203 journal = "Journal of Crystal Growth",
2210 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2211 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2212 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2214 notes = "first time ssmbe of 3c-sic on 6h-sic",
2218 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2219 [alpha]-Si{C}(0001) at low temperatures by solid-source
2220 molecular beam epitaxy",
2221 journal = "J. Cryst. Growth",
2227 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2228 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2229 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2230 Schr{\"{o}}ter and W. Richter",
2231 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2234 @Article{fissel95_apl,
2235 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2237 title = "Low-temperature growth of Si{C} thin films on Si and
2238 6{H}--Si{C} by solid-source molecular beam epitaxy",
2241 journal = "Appl. Phys. Lett.",
2244 pages = "3182--3184",
2245 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2247 URL = "http://link.aip.org/link/?APL/66/3182/1",
2248 doi = "10.1063/1.113716",
2249 notes = "mbe 3c-sic on si and 6h-sic",
2253 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2254 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2256 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2257 migration enhanced epitaxy controlled to an atomic
2258 level using surface superstructures",
2261 journal = "Applied Physics Letters",
2264 pages = "1204--1206",
2265 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2266 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2268 URL = "http://link.aip.org/link/?APL/68/1204/1",
2269 doi = "10.1063/1.115969",
2270 notes = "ss mbe sic, superstructure, reconstruction",
2274 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2275 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2276 C. M. Bertoni and A. Catellani",
2277 journal = "Phys. Rev. Lett.",
2284 doi = "10.1103/PhysRevLett.91.136101",
2285 publisher = "American Physical Society",
2286 notes = "dft calculations mbe sic growth",
2290 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2292 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2296 journal = "Appl. Phys. Lett.",
2300 URL = "http://link.aip.org/link/?APL/18/509/1",
2301 doi = "10.1063/1.1653516",
2302 notes = "first time sic by ibs, follow cites for precipitation
2307 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2308 and E. V. Lubopytova",
2309 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2310 by ion implantation",
2311 publisher = "Taylor \& Francis",
2313 journal = "Radiation Effects",
2317 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2318 notes = "3c-sic for different temperatures, amorphous, poly,
2319 single crystalline",
2322 @Article{akimchenko80,
2323 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2324 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2325 title = "Structure and optical properties of silicon implanted
2326 by high doses of 70 and 310 ke{V} carbon ions",
2327 publisher = "Taylor \& Francis",
2329 journal = "Radiation Effects",
2333 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2334 notes = "3c-sic nucleation by thermal spikes",
2338 title = "Structure and annealing properties of silicon carbide
2339 thin layers formed by implantation of carbon ions in
2341 journal = "Thin Solid Films",
2348 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2349 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2350 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2355 title = "Characteristics of the synthesis of [beta]-Si{C} by
2356 the implantation of carbon ions into silicon",
2357 journal = "Thin Solid Films",
2364 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2365 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2366 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2371 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2372 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2373 Chater and J. A. Iulner and J. Davis",
2374 title = "Formation mechanisms and structures of insulating
2375 compounds formed in silicon by ion beam synthesis",
2376 publisher = "Taylor \& Francis",
2378 journal = "Radiation Effects",
2382 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2383 notes = "ibs, comparison with sio and sin, higher temp or
2384 time, no c redistribution",
2388 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2389 J. Davis and G. E. Celler",
2391 title = "Formation of buried layers of beta-Si{C} using ion
2392 beam synthesis and incoherent lamp annealing",
2395 journal = "Appl. Phys. Lett.",
2398 pages = "2242--2244",
2399 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2400 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2401 URL = "http://link.aip.org/link/?APL/51/2242/1",
2402 doi = "10.1063/1.98953",
2403 notes = "nice tem images, sic by ibs",
2407 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2408 and M. Olivier and A. M. Papon and G. Rolland",
2410 title = "High-temperature ion beam synthesis of cubic Si{C}",
2413 journal = "Journal of Applied Physics",
2416 pages = "2908--2912",
2417 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2418 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2419 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2420 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2421 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2422 REACTIONS; MONOCRYSTALS",
2423 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2424 doi = "10.1063/1.346092",
2425 notes = "triple energy implantation to overcome high annealing
2430 author = "R. I. Scace and G. A. Slack",
2432 title = "Solubility of Carbon in Silicon and Germanium",
2435 journal = "J. Chem. Phys.",
2438 pages = "1551--1555",
2439 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2440 doi = "10.1063/1.1730236",
2441 notes = "solubility of c in c-si, si-c phase diagram",
2445 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2447 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2448 Laboratories Eindhoven Netherlands Eindhoven
2450 title = "Boron implantations in silicon: {A} comparison of
2451 charge carrier and boron concentration profiles",
2452 journal = "Applied Physics A: Materials Science \& Processing",
2453 publisher = "Springer Berlin / Heidelberg",
2455 keyword = "Physics and Astronomy",
2459 URL = "http://dx.doi.org/10.1007/BF00884267",
2460 note = "10.1007/BF00884267",
2462 notes = "first time ted (only for boron?)",
2466 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2469 title = "Rapid annealing and the anomalous diffusion of ion
2470 implanted boron into silicon",
2473 journal = "Applied Physics Letters",
2477 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2478 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2479 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2480 URL = "http://link.aip.org/link/?APL/50/416/1",
2481 doi = "10.1063/1.98160",
2482 notes = "ted of boron in si",
2486 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2489 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2490 time, and matrix dependence of atomic and electrical
2494 journal = "Journal of Applied Physics",
2497 pages = "6191--6198",
2498 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2499 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2500 CRYSTALS; AMORPHIZATION",
2501 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2502 doi = "10.1063/1.346910",
2503 notes = "ted of boron in si",
2507 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2508 F. W. Saris and W. Vandervorst",
2510 title = "Role of {C} and {B} clusters in transient diffusion of
2514 journal = "Appl. Phys. Lett.",
2517 pages = "1150--1152",
2518 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2519 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2521 URL = "http://link.aip.org/link/?APL/68/1150/1",
2522 doi = "10.1063/1.115706",
2523 notes = "suppression of transient enhanced diffusion (ted)",
2527 title = "Implantation and transient boron diffusion: the role
2528 of the silicon self-interstitial",
2529 journal = "Nucl. Instrum. Methods Phys. Res. B",
2534 note = "Selected Papers of the Tenth International Conference
2535 on Ion Implantation Technology (IIT '94)",
2537 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2538 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2539 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2544 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2545 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2546 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2549 title = "Physical mechanisms of transient enhanced dopant
2550 diffusion in ion-implanted silicon",
2553 journal = "J. Appl. Phys.",
2556 pages = "6031--6050",
2557 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2558 doi = "10.1063/1.364452",
2559 notes = "ted, transient enhanced diffusion, c silicon trap",
2563 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2565 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2566 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2569 journal = "Appl. Phys. Lett.",
2573 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2574 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2575 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2577 URL = "http://link.aip.org/link/?APL/64/324/1",
2578 doi = "10.1063/1.111195",
2579 notes = "beta sic nano crystals in si, mbe, annealing",
2583 author = "Richard A. Soref",
2585 title = "Optical band gap of the ternary semiconductor Si[sub 1
2586 - x - y]Ge[sub x]{C}[sub y]",
2589 journal = "J. Appl. Phys.",
2592 pages = "2470--2472",
2593 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2594 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2596 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2597 doi = "10.1063/1.349403",
2598 notes = "band gap of strained si by c",
2602 author = "E Kasper",
2603 title = "Superlattices of group {IV} elements, a new
2604 possibility to produce direct band gap material",
2605 journal = "Physica Scripta",
2608 URL = "http://stacks.iop.org/1402-4896/T35/232",
2610 notes = "superlattices, convert indirect band gap into a
2615 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2618 title = "Growth and strain compensation effects in the ternary
2619 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2622 journal = "Applied Physics Letters",
2625 pages = "3033--3035",
2626 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2627 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2628 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2629 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2631 URL = "http://link.aip.org/link/?APL/60/3033/1",
2632 doi = "10.1063/1.106774",
2636 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2639 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2643 journal = "J. Vac. Sci. Technol. B",
2646 pages = "1064--1068",
2647 location = "Ottawa (Canada)",
2648 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2649 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2650 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2651 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2652 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2653 doi = "10.1116/1.587008",
2654 notes = "substitutional c in si by mbe",
2657 @Article{powell93_2,
2658 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2659 of the ternary system",
2660 journal = "Journal of Crystal Growth",
2667 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2668 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2669 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2674 author = "H. J. Osten",
2675 title = "Modification of Growth Modes in Lattice-Mismatched
2676 Epitaxial Systems: Si/Ge",
2677 journal = "physica status solidi (a)",
2680 publisher = "WILEY-VCH Verlag",
2682 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2683 doi = "10.1002/pssa.2211450203",
2688 @Article{dietrich94,
2689 title = "Lattice distortion in a strain-compensated
2690 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2691 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2692 Methfessel and P. Zaumseil",
2693 journal = "Phys. Rev. B",
2696 pages = "17185--17190",
2700 doi = "10.1103/PhysRevB.49.17185",
2701 publisher = "American Physical Society",
2705 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2707 title = "Growth of an inverse tetragonal distorted SiGe layer
2708 on Si(001) by adding small amounts of carbon",
2711 journal = "Applied Physics Letters",
2714 pages = "3440--3442",
2715 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2716 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2717 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2719 URL = "http://link.aip.org/link/?APL/64/3440/1",
2720 doi = "10.1063/1.111235",
2721 notes = "inversely strained / distorted heterostructure",
2725 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2726 LeGoues and J. C. Tsang and F. Cardone",
2728 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2729 molecular beam epitaxy",
2732 journal = "Applied Physics Letters",
2736 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2737 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2738 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2739 FILM GROWTH; MICROSTRUCTURE",
2740 URL = "http://link.aip.org/link/?APL/60/356/1",
2741 doi = "10.1063/1.106655",
2745 author = "H. J. Osten and J. Griesche and S. Scalese",
2747 title = "Substitutional carbon incorporation in epitaxial
2748 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2749 molecular beam epitaxy",
2752 journal = "Appl. Phys. Lett.",
2756 keywords = "molecular beam epitaxial growth; semiconductor growth;
2757 wide band gap semiconductors; interstitials; silicon
2759 URL = "http://link.aip.org/link/?APL/74/836/1",
2760 doi = "10.1063/1.123384",
2761 notes = "substitutional c in si by mbe",
2764 @Article{hohenberg64,
2765 title = "Inhomogeneous Electron Gas",
2766 author = "P. Hohenberg and W. Kohn",
2767 journal = "Phys. Rev.",
2770 pages = "B864--B871",
2774 doi = "10.1103/PhysRev.136.B864",
2775 publisher = "American Physical Society",
2776 notes = "density functional theory, dft",
2780 title = "Self-Consistent Equations Including Exchange and
2781 Correlation Effects",
2782 author = "W. Kohn and L. J. Sham",
2783 journal = "Phys. Rev.",
2786 pages = "A1133--A1138",
2790 doi = "10.1103/PhysRev.140.A1133",
2791 publisher = "American Physical Society",
2792 notes = "dft, exchange and correlation",
2796 title = "Strain-stabilized highly concentrated pseudomorphic
2797 $Si1-x$$Cx$ layers in Si",
2798 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2800 journal = "Phys. Rev. Lett.",
2803 pages = "3578--3581",
2807 doi = "10.1103/PhysRevLett.72.3578",
2808 publisher = "American Physical Society",
2809 notes = "high c concentration in si, heterostructure, strained
2814 title = "Phosphorous Doping of Strain-Induced
2815 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2816 by Low-Temperature Chemical Vapor Deposition",
2817 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2818 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2819 journal = "Japanese Journal of Applied Physics",
2821 number = "Part 1, No. 4B",
2822 pages = "2472--2475",
2825 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2826 doi = "10.1143/JJAP.41.2472",
2827 publisher = "The Japan Society of Applied Physics",
2828 notes = "experimental charge carrier mobility in strained si",
2832 title = "Electron Transport Model for Strained Silicon-Carbon
2834 author = "Shu-Tong Chang and Chung-Yi Lin",
2835 journal = "Japanese J. Appl. Phys.",
2838 pages = "2257--2262",
2841 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2842 doi = "10.1143/JJAP.44.2257",
2843 publisher = "The Japan Society of Applied Physics",
2844 notes = "enhance of electron mobility in strained si",
2847 @Article{kissinger94,
2848 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2851 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2852 y] layers on Si(001)",
2855 journal = "Applied Physics Letters",
2858 pages = "3356--3358",
2859 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2860 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2861 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2862 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2863 URL = "http://link.aip.org/link/?APL/65/3356/1",
2864 doi = "10.1063/1.112390",
2865 notes = "strained si influence on optical properties",
2869 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2872 title = "Substitutional versus interstitial carbon
2873 incorporation during pseudomorphic growth of Si[sub 1 -
2874 y]{C}[sub y] on Si(001)",
2877 journal = "Journal of Applied Physics",
2880 pages = "6711--6715",
2881 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2882 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2884 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2885 doi = "10.1063/1.363797",
2886 notes = "mbe substitutional vs interstitial c incorporation",
2890 author = "H. J. Osten and P. Gaworzewski",
2892 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2893 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2897 journal = "J. Appl. Phys.",
2900 pages = "4977--4981",
2901 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2902 semiconductors; semiconductor epitaxial layers; carrier
2903 density; Hall mobility; interstitials; defect states",
2904 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2905 doi = "10.1063/1.366364",
2906 notes = "charge transport in strained si",
2910 title = "Carbon-mediated aggregation of self-interstitials in
2911 silicon: {A} large-scale molecular dynamics study",
2912 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2913 journal = "Phys. Rev. B",
2920 doi = "10.1103/PhysRevB.69.155214",
2921 publisher = "American Physical Society",
2922 notes = "simulation using promising tersoff reparametrization",
2926 title = "Event-Based Relaxation of Continuous Disordered
2928 author = "G. T. Barkema and Normand Mousseau",
2929 journal = "Phys. Rev. Lett.",
2932 pages = "4358--4361",
2936 doi = "10.1103/PhysRevLett.77.4358",
2937 publisher = "American Physical Society",
2938 notes = "activation relaxation technique, art, speed up slow
2943 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2944 Minoukadeh and F. Willaime",
2946 title = "Some improvements of the activation-relaxation
2947 technique method for finding transition pathways on
2948 potential energy surfaces",
2951 journal = "J. Chem. Phys.",
2957 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2958 surfaces; vacancies (crystal)",
2959 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2960 doi = "10.1063/1.3088532",
2961 notes = "improvements to art, refs for methods to find
2962 transition pathways",
2965 @Article{parrinello81,
2966 author = "M. Parrinello and A. Rahman",
2968 title = "Polymorphic transitions in single crystals: {A} new
2969 molecular dynamics method",
2972 journal = "J. Appl. Phys.",
2975 pages = "7182--7190",
2976 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2977 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2978 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2979 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2980 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2982 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2983 doi = "10.1063/1.328693",
2986 @Article{stillinger85,
2987 title = "Computer simulation of local order in condensed phases
2989 author = "Frank H. Stillinger and Thomas A. Weber",
2990 journal = "Phys. Rev. B",
2993 pages = "5262--5271",
2997 doi = "10.1103/PhysRevB.31.5262",
2998 publisher = "American Physical Society",
3002 title = "Empirical potential for hydrocarbons for use in
3003 simulating the chemical vapor deposition of diamond
3005 author = "Donald W. Brenner",
3006 journal = "Phys. Rev. B",
3009 pages = "9458--9471",
3013 doi = "10.1103/PhysRevB.42.9458",
3014 publisher = "American Physical Society",
3015 notes = "brenner hydro carbons",
3019 title = "Modeling of Covalent Bonding in Solids by Inversion of
3020 Cohesive Energy Curves",
3021 author = "Martin Z. Bazant and Efthimios Kaxiras",
3022 journal = "Phys. Rev. Lett.",
3025 pages = "4370--4373",
3029 doi = "10.1103/PhysRevLett.77.4370",
3030 publisher = "American Physical Society",
3031 notes = "first si edip",
3035 title = "Environment-dependent interatomic potential for bulk
3037 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3039 journal = "Phys. Rev. B",
3042 pages = "8542--8552",
3046 doi = "10.1103/PhysRevB.56.8542",
3047 publisher = "American Physical Society",
3048 notes = "second si edip",
3052 title = "Interatomic potential for silicon defects and
3054 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3055 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3056 journal = "Phys. Rev. B",
3059 pages = "2539--2550",
3063 doi = "10.1103/PhysRevB.58.2539",
3064 publisher = "American Physical Society",
3065 notes = "latest si edip, good dislocation explanation",
3069 title = "{PARCAS} molecular dynamics code",
3070 author = "K. Nordlund",
3075 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3077 author = "Arthur F. Voter",
3078 journal = "Phys. Rev. Lett.",
3081 pages = "3908--3911",
3085 doi = "10.1103/PhysRevLett.78.3908",
3086 publisher = "American Physical Society",
3087 notes = "hyperdynamics, accelerated md",
3091 author = "Arthur F. Voter",
3093 title = "A method for accelerating the molecular dynamics
3094 simulation of infrequent events",
3097 journal = "J. Chem. Phys.",
3100 pages = "4665--4677",
3101 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3102 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3103 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3104 energy functions; surface diffusion; reaction kinetics
3105 theory; potential energy surfaces",
3106 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3107 doi = "10.1063/1.473503",
3108 notes = "improved hyperdynamics md",
3111 @Article{sorensen2000,
3112 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3114 title = "Temperature-accelerated dynamics for simulation of
3118 journal = "J. Chem. Phys.",
3121 pages = "9599--9606",
3122 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3123 MOLECULAR DYNAMICS METHOD; surface diffusion",
3124 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3125 doi = "10.1063/1.481576",
3126 notes = "temperature accelerated dynamics, tad",
3130 title = "Parallel replica method for dynamics of infrequent
3132 author = "Arthur F. Voter",
3133 journal = "Phys. Rev. B",
3136 pages = "R13985--R13988",
3140 doi = "10.1103/PhysRevB.57.R13985",
3141 publisher = "American Physical Society",
3142 notes = "parallel replica method, accelerated md",
3146 author = "Xiongwu Wu and Shaomeng Wang",
3148 title = "Enhancing systematic motion in molecular dynamics
3152 journal = "J. Chem. Phys.",
3155 pages = "9401--9410",
3156 keywords = "molecular dynamics method; argon; Lennard-Jones
3157 potential; crystallisation; liquid theory",
3158 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3159 doi = "10.1063/1.478948",
3160 notes = "self guided md, sgmd, accelerated md, enhancing
3164 @Article{choudhary05,
3165 author = "Devashish Choudhary and Paulette Clancy",
3167 title = "Application of accelerated molecular dynamics schemes
3168 to the production of amorphous silicon",
3171 journal = "J. Chem. Phys.",
3177 keywords = "molecular dynamics method; silicon; glass structure;
3178 amorphous semiconductors",
3179 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3180 doi = "10.1063/1.1878733",
3181 notes = "explanation of sgmd and hyper md, applied to amorphous
3186 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3188 title = "Carbon precipitation in silicon: Why is it so
3192 journal = "Appl. Phys. Lett.",
3195 pages = "3336--3338",
3196 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3197 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3199 URL = "http://link.aip.org/link/?APL/62/3336/1",
3200 doi = "10.1063/1.109063",
3201 notes = "interfacial energy of cubic sic and si, si self
3202 interstitials necessary for precipitation, volume
3203 decrease, high interface energy",
3206 @Article{chaussende08,
3207 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3208 journal = "J. Cryst. Growth",
3213 note = "Proceedings of the E-MRS Conference, Symposium G -
3214 Substrates of Wide Bandgap Materials",
3216 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3217 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3218 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3219 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3220 and A. Andreadou and E. K. Polychroniadis and C.
3221 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3222 notes = "3c-sic crystal growth, sic fabrication + links,
3226 @Article{chaussende07,
3227 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3228 title = "Status of Si{C} bulk growth processes",
3229 journal = "Journal of Physics D: Applied Physics",
3233 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3235 notes = "review of sic single crystal growth methods, process
3240 title = "Forces in Molecules",
3241 author = "R. P. Feynman",
3242 journal = "Phys. Rev.",
3249 doi = "10.1103/PhysRev.56.340",
3250 publisher = "American Physical Society",
3251 notes = "hellmann feynman forces",
3255 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3256 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3257 their Contrasting Properties",
3258 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3260 journal = "Phys. Rev. Lett.",
3267 doi = "10.1103/PhysRevLett.84.943",
3268 publisher = "American Physical Society",
3269 notes = "si sio2 and sic sio2 interface",
3272 @Article{djurabekova08,
3273 title = "Atomistic simulation of the interface structure of Si
3274 nanocrystals embedded in amorphous silica",
3275 author = "Flyura Djurabekova and Kai Nordlund",
3276 journal = "Phys. Rev. B",
3283 doi = "10.1103/PhysRevB.77.115325",
3284 publisher = "American Physical Society",
3285 notes = "nc-si in sio2, interface energy, nc construction,
3286 angular distribution, coordination",
3290 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3291 W. Liang and J. Zou",
3293 title = "Nature of interfacial defects and their roles in
3294 strain relaxation at highly lattice mismatched
3295 3{C}-Si{C}/Si (001) interface",
3298 journal = "J. Appl. Phys.",
3304 keywords = "anelastic relaxation; crystal structure; dislocations;
3305 elemental semiconductors; semiconductor growth;
3306 semiconductor thin films; silicon; silicon compounds;
3307 stacking faults; wide band gap semiconductors",
3308 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3309 doi = "10.1063/1.3234380",
3310 notes = "sic/si interface, follow refs, tem image
3311 deconvolution, dislocation defects",
3314 @Article{kitabatake93,
3315 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3318 title = "Simulations and experiments of Si{C} heteroepitaxial
3319 growth on Si(001) surface",
3322 journal = "J. Appl. Phys.",
3325 pages = "4438--4445",
3326 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3327 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3328 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3329 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3330 doi = "10.1063/1.354385",
3331 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3335 @Article{kitabatake97,
3336 author = "Makoto Kitabatake",
3337 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3338 Heteroepitaxial Growth",
3339 publisher = "WILEY-VCH Verlag",
3341 journal = "physica status solidi (b)",
3344 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3345 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3346 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3350 title = "Strain relaxation and thermal stability of the
3351 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3353 journal = "Thin Solid Films",
3360 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3361 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3362 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3363 keywords = "Strain relaxation",
3364 keywords = "Interfaces",
3365 keywords = "Thermal stability",
3366 keywords = "Molecular dynamics",
3367 notes = "tersoff sic/si interface study",
3371 title = "Ab initio Study of Misfit Dislocations at the
3372 $Si{C}/Si(001)$ Interface",
3373 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3375 journal = "Phys. Rev. Lett.",
3382 doi = "10.1103/PhysRevLett.89.156101",
3383 publisher = "American Physical Society",
3384 notes = "sic/si interface study",
3387 @Article{pizzagalli03,
3388 title = "Theoretical investigations of a highly mismatched
3389 interface: Si{C}/Si(001)",
3390 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3392 journal = "Phys. Rev. B",
3399 doi = "10.1103/PhysRevB.68.195302",
3400 publisher = "American Physical Society",
3401 notes = "tersoff md and ab initio sic/si interface study",
3405 title = "Atomic configurations of dislocation core and twin
3406 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3407 electron microscopy",
3408 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3409 H. Zheng and J. W. Liang",
3410 journal = "Phys. Rev. B",
3417 doi = "10.1103/PhysRevB.75.184103",
3418 publisher = "American Physical Society",
3419 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3423 @Article{hornstra58,
3424 title = "Dislocations in the diamond lattice",
3425 journal = "Journal of Physics and Chemistry of Solids",
3432 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3433 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3434 author = "J. Hornstra",
3435 notes = "dislocations in diamond lattice",
3439 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3440 Ion `Hot' Implantation",
3441 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3442 Hirao and Naoki Arai and Tomio Izumi",
3443 journal = "Japanese J. Appl. Phys.",
3445 number = "Part 1, No. 2A",
3449 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3450 doi = "10.1143/JJAP.31.343",
3451 publisher = "The Japan Society of Applied Physics",
3452 notes = "c-c bonds in c implanted si, hot implantation
3453 efficiency, c-c hard to break by thermal annealing",
3456 @Article{eichhorn99,
3457 author = "F. Eichhorn and N. Schell and W. Matz and R.
3460 title = "Strain and Si{C} particle formation in silicon
3461 implanted with carbon ions of medium fluence studied by
3462 synchrotron x-ray diffraction",
3465 journal = "J. Appl. Phys.",
3468 pages = "4184--4187",
3469 keywords = "silicon; carbon; elemental semiconductors; chemical
3470 interdiffusion; ion implantation; X-ray diffraction;
3471 precipitation; semiconductor doping",
3472 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3473 doi = "10.1063/1.371344",
3474 notes = "sic conversion by ibs, detected substitutional carbon,
3475 expansion of si lattice",
3478 @Article{eichhorn02,
3479 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3480 Metzger and W. Matz and R. K{\"{o}}gler",
3482 title = "Structural relation between Si and Si{C} formed by
3483 carbon ion implantation",
3486 journal = "J. Appl. Phys.",
3489 pages = "1287--1292",
3490 keywords = "silicon compounds; wide band gap semiconductors; ion
3491 implantation; annealing; X-ray scattering; transmission
3492 electron microscopy",
3493 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3494 doi = "10.1063/1.1428105",
3495 notes = "3c-sic alignement to si host in ibs depending on
3496 temperature, might explain c into c sub trafo",
3500 author = "G Lucas and M Bertolus and L Pizzagalli",
3501 title = "An environment-dependent interatomic potential for
3502 silicon carbide: calculation of bulk properties,
3503 high-pressure phases, point and extended defects, and
3504 amorphous structures",
3505 journal = "J. Phys.: Condens. Matter",
3509 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3515 author = "J Godet and L Pizzagalli and S Brochard and P
3517 title = "Comparison between classical potentials and ab initio
3518 methods for silicon under large shear",
3519 journal = "J. Phys.: Condens. Matter",
3523 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3525 notes = "comparison of empirical potentials, stillinger weber,
3526 edip, tersoff, ab initio",
3529 @Article{moriguchi98,
3530 title = "Verification of Tersoff's Potential for Static
3531 Structural Analysis of Solids of Group-{IV} Elements",
3532 author = "Koji Moriguchi and Akira Shintani",
3533 journal = "Japanese J. Appl. Phys.",
3535 number = "Part 1, No. 2",
3539 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3540 doi = "10.1143/JJAP.37.414",
3541 publisher = "The Japan Society of Applied Physics",
3542 notes = "tersoff stringent test",
3545 @Article{mazzarolo01,
3546 title = "Low-energy recoils in crystalline silicon: Quantum
3548 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3549 Lulli and Eros Albertazzi",
3550 journal = "Phys. Rev. B",
3557 doi = "10.1103/PhysRevB.63.195207",
3558 publisher = "American Physical Society",
3561 @Article{holmstroem08,
3562 title = "Threshold defect production in silicon determined by
3563 density functional theory molecular dynamics
3565 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3566 journal = "Phys. Rev. B",
3573 doi = "10.1103/PhysRevB.78.045202",
3574 publisher = "American Physical Society",
3575 notes = "threshold displacement comparison empirical and ab
3579 @Article{nordlund97,
3580 title = "Repulsive interatomic potentials calculated using
3581 Hartree-Fock and density-functional theory methods",
3582 journal = "Nucl. Instrum. Methods Phys. Res. B",
3589 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3590 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3591 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3592 notes = "repulsive ab initio potential",
3596 title = "Efficiency of ab-initio total energy calculations for
3597 metals and semiconductors using a plane-wave basis
3599 journal = "Comput. Mater. Sci.",
3606 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3607 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3608 author = "G. Kresse and J. Furthm{\"{u}}ller",
3613 title = "Projector augmented-wave method",
3614 author = "P. E. Bl{\"o}chl",
3615 journal = "Phys. Rev. B",
3618 pages = "17953--17979",
3622 doi = "10.1103/PhysRevB.50.17953",
3623 publisher = "American Physical Society",
3624 notes = "paw method",
3628 title = "Norm-Conserving Pseudopotentials",
3629 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3630 journal = "Phys. Rev. Lett.",
3633 pages = "1494--1497",
3637 doi = "10.1103/PhysRevLett.43.1494",
3638 publisher = "American Physical Society",
3639 notes = "norm-conserving pseudopotentials",
3642 @Article{vanderbilt90,
3643 title = "Soft self-consistent pseudopotentials in a generalized
3644 eigenvalue formalism",
3645 author = "David Vanderbilt",
3646 journal = "Phys. Rev. B",
3649 pages = "7892--7895",
3653 doi = "10.1103/PhysRevB.41.7892",
3654 publisher = "American Physical Society",
3655 notes = "vasp pseudopotentials",
3659 title = "Accurate and simple density functional for the
3660 electronic exchange energy: Generalized gradient
3662 author = "John P. Perdew and Yue Wang",
3663 journal = "Phys. Rev. B",
3666 pages = "8800--8802",
3670 doi = "10.1103/PhysRevB.33.8800",
3671 publisher = "American Physical Society",
3672 notes = "rapid communication gga",
3676 title = "Generalized gradient approximations for exchange and
3677 correlation: {A} look backward and forward",
3678 journal = "Physica B: Condensed Matter",
3685 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3686 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3687 author = "John P. Perdew",
3688 notes = "gga overview",
3692 title = "Atoms, molecules, solids, and surfaces: Applications
3693 of the generalized gradient approximation for exchange
3695 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3696 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3697 and Carlos Fiolhais",
3698 journal = "Phys. Rev. B",
3701 pages = "6671--6687",
3705 doi = "10.1103/PhysRevB.46.6671",
3706 publisher = "American Physical Society",
3707 notes = "gga pw91 (as in vasp)",
3710 @Article{baldereschi73,
3711 title = "Mean-Value Point in the Brillouin Zone",
3712 author = "A. Baldereschi",
3713 journal = "Phys. Rev. B",
3716 pages = "5212--5215",
3720 doi = "10.1103/PhysRevB.7.5212",
3721 publisher = "American Physical Society",
3722 notes = "mean value k point",
3726 title = "Ab initio pseudopotential calculations of dopant
3728 journal = "Comput. Mater. Sci.",
3735 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3736 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3737 author = "Jing Zhu",
3738 keywords = "TED (transient enhanced diffusion)",
3739 keywords = "Boron dopant",
3740 keywords = "Carbon dopant",
3741 keywords = "Defect",
3742 keywords = "ab initio pseudopotential method",
3743 keywords = "Impurity cluster",
3744 notes = "binding of c to si interstitial, c in si defects",
3748 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3750 title = "Si{C} buried layer formation by ion beam synthesis at
3754 journal = "Appl. Phys. Lett.",
3757 pages = "2646--2648",
3758 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3759 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3760 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3761 ELECTRON MICROSCOPY",
3762 URL = "http://link.aip.org/link/?APL/66/2646/1",
3763 doi = "10.1063/1.113112",
3764 notes = "precipitation mechanism by substitutional carbon, si
3765 self interstitials react with further implanted c",
3769 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3770 Kolodzey and A. Hairie",
3772 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3776 journal = "J. Appl. Phys.",
3779 pages = "4631--4633",
3780 keywords = "silicon compounds; precipitation; localised modes;
3781 semiconductor epitaxial layers; infrared spectra;
3782 Fourier transform spectra; thermal stability;
3784 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3785 doi = "10.1063/1.368703",
3786 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3790 author = "R Jones and B J Coomer and P R Briddon",
3791 title = "Quantum mechanical modelling of defects in
3793 journal = "J. Phys.: Condens. Matter",
3797 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3799 notes = "ab inito dft intro, vibrational modes, c defect in
3804 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3805 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3806 J. E. Greene and S. G. Bishop",
3808 title = "Carbon incorporation pathways and lattice sites in
3809 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3810 molecular-beam epitaxy",
3813 journal = "J. Appl. Phys.",
3816 pages = "5716--5727",
3817 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3818 doi = "10.1063/1.1465122",
3819 notes = "c substitutional incorporation pathway, dft and expt",
3823 title = "Dynamic properties of interstitial carbon and
3824 carbon-carbon pair defects in silicon",
3825 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3827 journal = "Phys. Rev. B",
3830 pages = "2188--2194",
3834 doi = "10.1103/PhysRevB.55.2188",
3835 publisher = "American Physical Society",
3836 notes = "ab initio c in si and di-carbon defect, no formation
3837 energies, different migration barriers and paths",
3841 title = "Interstitial carbon and the carbon-carbon pair in
3842 silicon: Semiempirical electronic-structure
3844 author = "Matthew J. Burnard and Gary G. DeLeo",
3845 journal = "Phys. Rev. B",
3848 pages = "10217--10225",
3852 doi = "10.1103/PhysRevB.47.10217",
3853 publisher = "American Physical Society",
3854 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3855 carbon defect, formation energies",
3859 title = "Electronic structure of interstitial carbon in
3861 author = "Morgan Besson and Gary G. DeLeo",
3862 journal = "Phys. Rev. B",
3865 pages = "4028--4033",
3869 doi = "10.1103/PhysRevB.43.4028",
3870 publisher = "American Physical Society",
3874 title = "Review of atomistic simulations of surface diffusion
3875 and growth on semiconductors",
3876 journal = "Comput. Mater. Sci.",
3881 note = "Proceedings of the Workshop on Virtual Molecular Beam
3884 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3885 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3886 author = "Efthimios Kaxiras",
3887 notes = "might contain c 100 db formation energy, overview md,
3888 tight binding, first principles",
3891 @Article{kaukonen98,
3892 title = "Effect of {N} and {B} doping on the growth of {CVD}
3894 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3896 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3897 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3899 journal = "Phys. Rev. B",
3902 pages = "9965--9970",
3906 doi = "10.1103/PhysRevB.57.9965",
3907 publisher = "American Physical Society",
3908 notes = "constrained conjugate gradient relaxation technique
3913 title = "Correlation between the antisite pair and the ${DI}$
3915 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3916 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3918 journal = "Phys. Rev. B",
3925 doi = "10.1103/PhysRevB.67.155203",
3926 publisher = "American Physical Society",
3930 title = "Production and recovery of defects in Si{C} after
3931 irradiation and deformation",
3932 journal = "J. Nucl. Mater.",
3935 pages = "1803--1808",
3939 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3940 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3941 author = "J. Chen and P. Jung and H. Klein",
3945 title = "Accumulation, dynamic annealing and thermal recovery
3946 of ion-beam-induced disorder in silicon carbide",
3947 journal = "Nucl. Instrum. Methods Phys. Res. B",
3954 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3955 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3956 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3959 @Article{bockstedte03,
3960 title = "Ab initio study of the migration of intrinsic defects
3962 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3964 journal = "Phys. Rev. B",
3971 doi = "10.1103/PhysRevB.68.205201",
3972 publisher = "American Physical Society",
3973 notes = "defect migration in sic",
3977 title = "Theoretical study of vacancy diffusion and
3978 vacancy-assisted clustering of antisites in Si{C}",
3979 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3981 journal = "Phys. Rev. B",
3988 doi = "10.1103/PhysRevB.68.155208",
3989 publisher = "American Physical Society",
3993 journal = "Telegrafiya i Telefoniya bez Provodov",
3997 author = "O. V. Lossev",
4001 title = "Luminous carborundum detector and detection effect and
4002 oscillations with crystals",
4003 journal = "Philosophical Magazine Series 7",
4006 pages = "1024--1044",
4008 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4009 author = "O. V. Lossev",
4013 journal = "Physik. Zeitschr.",
4017 author = "O. V. Lossev",
4021 journal = "Physik. Zeitschr.",
4025 author = "O. V. Lossev",
4029 journal = "Physik. Zeitschr.",
4033 author = "O. V. Lossev",
4037 title = "A note on carborundum",
4038 journal = "Electrical World",
4042 author = "H. J. Round",
4045 @Article{vashishath08,
4046 title = "Recent trends in silicon carbide device research",
4047 journal = "Mj. Int. J. Sci. Tech.",
4052 author = "Munish Vashishath and Ashoke K. Chatterjee",
4053 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4054 notes = "sic polytype electronic properties",
4058 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4060 title = "Growth and Properties of beta-Si{C} Single Crystals",
4063 journal = "Journal of Applied Physics",
4067 URL = "http://link.aip.org/link/?JAP/37/333/1",
4068 doi = "10.1063/1.1707837",
4069 notes = "sic melt growth",
4073 author = "A. E. van Arkel and J. H. de Boer",
4074 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4076 publisher = "WILEY-VCH Verlag GmbH",
4078 journal = "Z. Anorg. Chem.",
4081 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4082 doi = "10.1002/zaac.19251480133",
4083 notes = "van arkel apparatus",
4087 author = "K. Moers",
4089 journal = "Z. Anorg. Chem.",
4092 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4097 author = "J. T. Kendall",
4098 title = "Electronic Conduction in Silicon Carbide",
4101 journal = "The Journal of Chemical Physics",
4105 URL = "http://link.aip.org/link/?JCP/21/821/1",
4106 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4111 author = "J. A. Lely",
4113 journal = "Ber. Deut. Keram. Ges.",
4116 notes = "lely sublimation growth process",
4119 @Article{knippenberg63,
4120 author = "W. F. Knippenberg",
4122 journal = "Philips Res. Repts.",
4125 notes = "acheson process",
4128 @Article{hoffmann82,
4129 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4132 title = "Silicon carbide blue light emitting diodes with
4133 improved external quantum efficiency",
4136 journal = "Journal of Applied Physics",
4139 pages = "6962--6967",
4140 keywords = "light emitting diodes; silicon carbides; quantum
4141 efficiency; visible radiation; experimental data;
4142 epitaxy; fabrication; medium temperature; layers;
4143 aluminium; nitrogen; substrates; pn junctions;
4144 electroluminescence; spectra; current density;
4146 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4147 doi = "10.1063/1.330041",
4148 notes = "blue led, sublimation process",
4152 author = "Philip Neudeck",
4153 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4154 Road 44135 Cleveland OH",
4155 title = "Progress in silicon carbide semiconductor electronics
4157 journal = "Journal of Electronic Materials",
4158 publisher = "Springer Boston",
4160 keyword = "Chemistry and Materials Science",
4164 URL = "http://dx.doi.org/10.1007/BF02659688",
4165 note = "10.1007/BF02659688",
4167 notes = "sic data, advantages of 3c sic",
4170 @Article{bhatnagar93,
4171 author = "M. Bhatnagar and B. J. Baliga",
4172 journal = "Electron Devices, IEEE Transactions on",
4173 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4180 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4181 rectifiers;Si;SiC;breakdown voltages;drift region
4182 properties;output characteristics;power MOSFETs;power
4183 semiconductor devices;switching characteristics;thermal
4184 analysis;Schottky-barrier diodes;electric breakdown of
4185 solids;insulated gate field effect transistors;power
4186 transistors;semiconductor materials;silicon;silicon
4187 compounds;solid-state rectifiers;thermal analysis;",
4188 doi = "10.1109/16.199372",
4190 notes = "comparison 3c 6h sic and si devices",
4194 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4195 A. Powell and C. S. Salupo and L. G. Matus",
4196 journal = "Electron Devices, IEEE Transactions on",
4197 title = "Electrical properties of epitaxial 3{C}- and
4198 6{H}-Si{C} p-n junction diodes produced side-by-side on
4199 6{H}-Si{C} substrates",
4205 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4206 C;6H-SiC layers;6H-SiC substrates;CVD
4207 process;SiC;chemical vapor deposition;doping;electrical
4208 properties;epitaxial layers;light
4209 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4210 diodes;polytype;rectification characteristics;reverse
4211 leakage current;reverse voltages;temperature;leakage
4212 currents;power electronics;semiconductor
4213 diodes;semiconductor epitaxial layers;semiconductor
4214 growth;semiconductor materials;silicon
4215 compounds;solid-state rectifiers;substrates;vapour
4216 phase epitaxial growth;",
4217 doi = "10.1109/16.285038",
4219 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4224 author = "N. Schulze and D. L. Barrett and G. Pensl",
4226 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4227 single crystals by physical vapor transport",
4230 journal = "Applied Physics Letters",
4233 pages = "1632--1634",
4234 keywords = "silicon compounds; semiconductor materials;
4235 semiconductor growth; crystal growth from vapour;
4236 photoluminescence; Hall mobility",
4237 URL = "http://link.aip.org/link/?APL/72/1632/1",
4238 doi = "10.1063/1.121136",
4239 notes = "micropipe free 6h-sic pvt growth",
4243 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4245 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4248 journal = "Applied Physics Letters",
4252 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4253 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4254 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4255 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4257 URL = "http://link.aip.org/link/?APL/50/221/1",
4258 doi = "10.1063/1.97667",
4259 notes = "apb 3c-sic heteroepitaxy on si",
4262 @Article{shibahara86,
4263 title = "Surface morphology of cubic Si{C}(100) grown on
4264 Si(100) by chemical vapor deposition",
4265 journal = "Journal of Crystal Growth",
4272 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4273 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4274 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4276 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4279 @Article{desjardins96,
4280 author = "P. Desjardins and J. E. Greene",
4282 title = "Step-flow epitaxial growth on two-domain surfaces",
4285 journal = "Journal of Applied Physics",
4288 pages = "1423--1434",
4289 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4290 FILM GROWTH; SURFACE STRUCTURE",
4291 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4292 doi = "10.1063/1.360980",
4293 notes = "apb model",
4297 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4299 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4300 carbonization of silicon",
4303 journal = "Journal of Applied Physics",
4306 pages = "2070--2073",
4307 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4308 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4310 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4311 doi = "10.1063/1.360184",
4312 notes = "ssmbe of sic on si, lower temperatures",
4316 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4317 {MBE} using surface superstructure",
4318 journal = "Journal of Crystal Growth",
4325 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4326 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4327 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4328 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4329 notes = "gas source mbe of 3c-sic on 6h-sic",
4332 @Article{yoshinobu92,
4333 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4334 and Takashi Fuyuki and Hiroyuki Matsunami",
4336 title = "Lattice-matched epitaxial growth of single crystalline
4337 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4338 molecular beam epitaxy",
4341 journal = "Applied Physics Letters",
4345 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4346 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4347 INTERFACE STRUCTURE",
4348 URL = "http://link.aip.org/link/?APL/60/824/1",
4349 doi = "10.1063/1.107430",
4350 notes = "gas source mbe of 3c-sic on 6h-sic",
4353 @Article{yoshinobu90,
4354 title = "Atomic level control in gas source {MBE} growth of
4356 journal = "Journal of Crystal Growth",
4363 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4364 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4365 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4366 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4367 notes = "gas source mbe of 3c-sic on 3c-sic",
4371 title = "Atomic layer epitaxy controlled by surface
4372 superstructures in Si{C}",
4373 journal = "Thin Solid Films",
4380 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4381 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4382 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4384 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4389 title = "Microscopic mechanisms of accurate layer-by-layer
4390 growth of [beta]-Si{C}",
4391 journal = "Thin Solid Films",
4398 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4399 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4400 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4401 and S. Misawa and E. Sakuma and S. Yoshida",
4402 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4407 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4409 title = "Effects of gas flow ratio on silicon carbide thin film
4410 growth mode and polytype formation during gas-source
4411 molecular beam epitaxy",
4414 journal = "Applied Physics Letters",
4417 pages = "2851--2853",
4418 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4419 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4420 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4422 URL = "http://link.aip.org/link/?APL/65/2851/1",
4423 doi = "10.1063/1.112513",
4424 notes = "gas source mbe of 6h-sic on 6h-sic",
4428 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4429 title = "Heterointerface Control and Epitaxial Growth of
4430 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4431 publisher = "WILEY-VCH Verlag",
4433 journal = "physica status solidi (b)",
4436 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4441 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4442 journal = "Journal of Crystal Growth",
4449 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4450 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4451 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4452 keywords = "Reflection high-energy electron diffraction (RHEED)",
4453 keywords = "Scanning electron microscopy (SEM)",
4454 keywords = "Silicon carbide",
4455 keywords = "Silicon",
4456 keywords = "Island growth",
4457 notes = "lower temperature, 550-700",
4460 @Article{hatayama95,
4461 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4462 on Si using hydrocarbon radicals by gas source
4463 molecular beam epitaxy",
4464 journal = "Journal of Crystal Growth",
4471 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4472 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4473 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4474 and Hiroyuki Matsunami",
4478 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4479 title = "The Preference of Silicon Carbide for Growth in the
4480 Metastable Cubic Form",
4481 journal = "Journal of the American Ceramic Society",
4484 publisher = "Blackwell Publishing Ltd",
4486 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4487 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4488 pages = "2630--2633",
4489 keywords = "silicon carbide, crystal growth, crystal structure,
4490 calculations, stability",
4492 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4493 polytype dft calculation refs",
4496 @Article{allendorf91,
4497 title = "The adsorption of {H}-atoms on polycrystalline
4498 [beta]-silicon carbide",
4499 journal = "Surface Science",
4506 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4507 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4508 author = "Mark D. Allendorf and Duane A. Outka",
4509 notes = "h adsorption on 3c-sic",
4512 @Article{eaglesham93,
4513 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4514 D. P. Adams and S. M. Yalisove",
4516 title = "Effect of {H} on Si molecular-beam epitaxy",
4519 journal = "Journal of Applied Physics",
4522 pages = "6615--6618",
4523 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4524 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4525 DIFFUSION; ADSORPTION",
4526 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4527 doi = "10.1063/1.355101",
4528 notes = "h incorporation on si surface, lower surface
4533 author = "Ronald C. Newman",
4534 title = "Carbon in Crystalline Silicon",
4535 journal = "MRS Online Proceedings Library",
4540 doi = "10.1557/PROC-59-403",
4541 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4542 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4546 title = "The diffusivity of carbon in silicon",
4547 journal = "Journal of Physics and Chemistry of Solids",
4554 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4555 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4556 author = "R. C. Newman and J. Wakefield",
4557 notes = "diffusivity of substitutional c in si",
4561 author = "U. Gösele",
4562 title = "The Role of Carbon and Point Defects in Silicon",
4563 journal = "MRS Online Proceedings Library",
4568 doi = "10.1557/PROC-59-419",
4569 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4570 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4573 @Article{mukashev82,
4574 title = "Defects in Carbon-Implanted Silicon",
4575 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4576 Fukuoka and Haruo Saito",
4577 journal = "Japanese Journal of Applied Physics",
4579 number = "Part 1, No. 2",
4583 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4584 doi = "10.1143/JJAP.21.399",
4585 publisher = "The Japan Society of Applied Physics",
4589 title = "Convergence of supercell calculations for point
4590 defects in semiconductors: Vacancy in silicon",
4591 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4593 journal = "Phys. Rev. B",
4596 pages = "1318--1325",
4600 doi = "10.1103/PhysRevB.58.1318",
4601 publisher = "American Physical Society",
4602 notes = "convergence k point supercell size, vacancy in
4607 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4608 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4609 K{\"{o}}gler and W. Skorupa",
4611 title = "Spectroscopic characterization of phases formed by
4612 high-dose carbon ion implantation in silicon",
4615 journal = "Journal of Applied Physics",
4618 pages = "2978--2984",
4619 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4620 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4621 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4622 DEPENDENCE; PRECIPITATES; ANNEALING",
4623 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4624 doi = "10.1063/1.358714",
4627 @Article{romano-rodriguez96,
4628 title = "Detailed analysis of [beta]-Si{C} formation by high
4629 dose carbon ion implantation in silicon",
4630 journal = "Materials Science and Engineering B",
4635 note = "European Materials Research Society 1995 Spring
4636 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4637 Oxygen in Silicon and in Other Elemental
4640 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4641 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4642 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4643 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4645 keywords = "Silicon",
4646 keywords = "Ion implantation",
4647 notes = "incoherent 3c-sic precipitate",