2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1080 doi = "10.1063/1.358826",
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1159 Silicon Materials Research for Electronic and
1160 Photovoltaic Applications",
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1264 journal = "Appl. Phys. A",
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1273 title = "On the balance between ion beam induced nanoparticle
1274 formation and displacive precipitate resolution in the
1276 journal = "Mater. Sci. Eng., C",
1281 note = "Current Trends in Nanoscience - from Materials to
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1293 application in buffer layer for Ga{N} epitaxial
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1300 note = "APHYS'03 Special Issue",
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1304 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
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1309 @Article{yamamoto04,
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1311 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1312 implantation into Si(1Â 1Â 1) substrate",
1313 journal = "Journal of Crystal Growth",
1318 note = "Proceedings of the 11th Biennial (US) Workshop on
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1329 title = "Substrates for gallium nitride epitaxy",
1330 journal = "Materials Science and Engineering: R: Reports",
1337 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
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1343 @Article{takeuchi91,
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1353 doi = "DOI: 10.1016/0022-0248(91)90817-O",
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1355 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1356 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1357 notes = "gan on 3c-sic (first time?)",
1361 author = "B. J. Alder and T. E. Wainwright",
1362 title = "Phase Transition for a Hard Sphere System",
1365 journal = "J. Chem. Phys.",
1368 pages = "1208--1209",
1369 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1370 doi = "10.1063/1.1743957",
1374 author = "B. J. Alder and T. E. Wainwright",
1375 title = "Studies in Molecular Dynamics. {I}. General Method",
1378 journal = "J. Chem. Phys.",
1382 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1386 @Article{tersoff_si1,
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1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. Lett.",
1397 doi = "10.1103/PhysRevLett.56.632",
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1432 title = "Empirical Interatomic Potential for Carbon, with
1433 Applications to Amorphous Carbon",
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1435 journal = "Phys. Rev. Lett.",
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1450 journal = "Phys. Rev. B",
1453 pages = "5566--5568",
1457 doi = "10.1103/PhysRevB.39.5566",
1458 publisher = "American Physical Society",
1462 title = "Carbon defects and defect reactions in silicon",
1463 author = "J. Tersoff",
1464 journal = "Phys. Rev. Lett.",
1467 pages = "1757--1760",
1471 doi = "10.1103/PhysRevLett.64.1757",
1472 publisher = "American Physical Society",
1476 title = "Point defects and dopant diffusion in silicon",
1477 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1478 journal = "Rev. Mod. Phys.",
1485 doi = "10.1103/RevModPhys.61.289",
1486 publisher = "American Physical Society",
1490 title = "Silicon carbide: synthesis and processing",
1491 journal = "Nucl. Instrum. Methods Phys. Res. B",
1496 note = "Radiation Effects in Insulators",
1498 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1504 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
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1506 journal = "Proceedings of the IEEE",
1507 title = "Thin film deposition and microelectronic and
1508 optoelectronic device fabrication and characterization
1509 in monocrystalline alpha and beta silicon carbide",
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1518 device fabrication;solid-state devices;surface
1519 chemistry;Schottky effect;Schottky gate field effect
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1525 doi = "10.1109/5.90132",
1527 notes = "sic growth methods",
1531 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1532 Lin and B. Sverdlov and M. Burns",
1534 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1535 ZnSe-based semiconductor device technologies",
1538 journal = "J. Appl. Phys.",
1541 pages = "1363--1398",
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1543 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1548 notes = "sic intro, properties",
1552 author = "Noch Unbekannt",
1553 title = "How to find references",
1554 journal = "Journal of Applied References",
1561 title = "Atomistic simulation of thermomechanical properties of
1563 author = "Meijie Tang and Sidney Yip",
1564 journal = "Phys. Rev. B",
1567 pages = "15150--15159",
1570 doi = "10.1103/PhysRevB.52.15150",
1571 notes = "modified tersoff, scale cutoff with volume, promising
1572 tersoff reparametrization",
1573 publisher = "American Physical Society",
1577 title = "Silicon carbide as a new {MEMS} technology",
1578 journal = "Sensors and Actuators A: Physical",
1584 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1585 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1586 author = "Pasqualina M. Sarro",
1588 keywords = "Silicon carbide",
1589 keywords = "Micromachining",
1590 keywords = "Mechanical stress",
1594 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1595 semiconductor for high-temperature applications: {A}
1597 journal = "Solid-State Electronics",
1600 pages = "1409--1422",
1603 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1604 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1605 author = "J. B. Casady and R. W. Johnson",
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1609 @Article{giancarli98,
1610 title = "Design requirements for Si{C}/Si{C} composites
1611 structural material in fusion power reactor blankets",
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1618 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1620 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1621 Marois and N. B. Morley and J. F. Salavy",
1625 title = "Electrical and optical characterization of Si{C}",
1626 journal = "Physica B: Condensed Matter",
1632 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1633 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1634 author = "G. Pensl and W. J. Choyke",
1638 title = "Investigation of growth processes of ingots of silicon
1639 carbide single crystals",
1640 journal = "J. Cryst. Growth",
1645 notes = "modified lely process",
1647 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1648 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1649 author = "Yu. M. Tairov and V. F. Tsvetkov",
1653 title = "General principles of growing large-size single
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1655 journal = "Journal of Crystal Growth",
1662 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1663 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1664 author = "Yu.M. Tairov and V. F. Tsvetkov",
1668 title = "Si{C} boule growth by sublimation vapor transport",
1669 journal = "Journal of Crystal Growth",
1676 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1677 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
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1679 R. H. Hopkins and W. J. Choyke",
1683 title = "Growth of large Si{C} single crystals",
1684 journal = "Journal of Crystal Growth",
1691 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
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1694 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1699 title = "Control of polytype formation by surface energy
1700 effects during the growth of Si{C} monocrystals by the
1701 sublimation method",
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1709 doi = "DOI: 10.1016/0022-0248(93)90397-F",
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1716 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1719 title = "Production of large-area single-crystal wafers of
1720 cubic Si{C} for semiconductor devices",
1723 journal = "Appl. Phys. Lett.",
1727 keywords = "silicon carbides; layers; chemical vapor deposition;
1729 URL = "http://link.aip.org/link/?APL/42/460/1",
1730 doi = "10.1063/1.93970",
1731 notes = "cvd of 3c-sic on si, sic buffer layer",
1735 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1736 and Hiroyuki Matsunami",
1738 title = "Epitaxial growth and electric characteristics of cubic
1742 journal = "J. Appl. Phys.",
1745 pages = "4889--4893",
1746 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1747 doi = "10.1063/1.338355",
1748 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1753 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1755 title = "Growth and Characterization of Cubic Si{C}
1756 Single-Crystal Films on Si",
1759 journal = "Journal of The Electrochemical Society",
1762 pages = "1558--1565",
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1767 notes = "blue light emitting diodes (led)",
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1774 title = "Improved beta-Si{C} heteroepitaxial films using
1775 off-axis Si substrates",
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1788 doi = "10.1063/1.98824",
1789 notes = "improved sic on off-axis si substrates, reduced apbs",
1793 title = "Crystal growth of Si{C} by step-controlled epitaxy",
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1802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1803 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
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1809 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1811 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1815 journal = "J. Appl. Phys.",
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1820 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1822 URL = "http://link.aip.org/link/?JAP/73/726/1",
1823 doi = "10.1063/1.353329",
1824 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
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1829 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1830 Yoganathan and J. Yang and P. Pirouz",
1832 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
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1836 journal = "Applied Physics Letters",
1839 pages = "1442--1444",
1840 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
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1850 author = "H. S. Kong and J. T. Glass and R. F. Davis",
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1872 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1873 Yoganathan and J. Yang and P. Pirouz",
1875 title = "Growth of improved quality 3{C}-Si{C} films on
1876 6{H}-Si{C} substrates",
1879 journal = "Appl. Phys. Lett.",
1882 pages = "1353--1355",
1883 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
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1894 Rozgonyi and K. L. More",
1896 title = "An examination of double positioning boundaries and
1897 interface misfit in beta-Si{C} films on alpha-Si{C}
1901 journal = "Journal of Applied Physics",
1904 pages = "2645--2650",
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1906 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1907 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1908 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1909 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1910 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1911 doi = "10.1063/1.341004",
1915 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1916 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1917 and W. J. Choyke and L. Clemen and M. Yoganathan",
1919 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1920 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1923 journal = "Applied Physics Letters",
1927 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1928 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1929 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1930 URL = "http://link.aip.org/link/?APL/59/333/1",
1931 doi = "10.1063/1.105587",
1935 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1936 Thokala and M. J. Loboda",
1938 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1939 films on 6{H}-Si{C} by chemical vapor deposition from
1943 journal = "J. Appl. Phys.",
1946 pages = "1271--1273",
1947 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1948 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1950 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1951 doi = "10.1063/1.360368",
1952 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1956 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
1957 properties of its p-n junction",
1958 journal = "Journal of Crystal Growth",
1965 doi = "DOI: 10.1016/0022-0248(87)90449-0",
1966 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
1967 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
1969 notes = "first time ssmbe of 3c-sic on 6h-sic",
1973 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1974 [alpha]-Si{C}(0001) at low temperatures by solid-source
1975 molecular beam epitaxy",
1976 journal = "J. Cryst. Growth",
1982 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1983 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1984 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1985 Schr{\"{o}}ter and W. Richter",
1986 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1989 @Article{fissel95_apl,
1990 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1992 title = "Low-temperature growth of Si{C} thin films on Si and
1993 6{H}--Si{C} by solid-source molecular beam epitaxy",
1996 journal = "Appl. Phys. Lett.",
1999 pages = "3182--3184",
2000 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2002 URL = "http://link.aip.org/link/?APL/66/3182/1",
2003 doi = "10.1063/1.113716",
2004 notes = "mbe 3c-sic on si and 6h-sic",
2008 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2009 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2011 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2012 migration enhanced epitaxy controlled to an atomic
2013 level using surface superstructures",
2016 journal = "Applied Physics Letters",
2019 pages = "1204--1206",
2020 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2021 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2023 URL = "http://link.aip.org/link/?APL/68/1204/1",
2024 doi = "10.1063/1.115969",
2025 notes = "ss mbe sic, superstructure, reconstruction",
2029 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2030 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2031 C. M. Bertoni and A. Catellani",
2032 journal = "Phys. Rev. Lett.",
2039 doi = "10.1103/PhysRevLett.91.136101",
2040 publisher = "American Physical Society",
2041 notes = "dft calculations mbe sic growth",
2045 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2047 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2051 journal = "Appl. Phys. Lett.",
2055 URL = "http://link.aip.org/link/?APL/18/509/1",
2056 doi = "10.1063/1.1653516",
2057 notes = "first time sic by ibs, follow cites for precipitation
2062 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2063 J. Davis and G. E. Celler",
2065 title = "Formation of buried layers of beta-Si{C} using ion
2066 beam synthesis and incoherent lamp annealing",
2069 journal = "Appl. Phys. Lett.",
2072 pages = "2242--2244",
2073 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2074 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2075 URL = "http://link.aip.org/link/?APL/51/2242/1",
2076 doi = "10.1063/1.98953",
2077 notes = "nice tem images, sic by ibs",
2081 author = "R. I. Scace and G. A. Slack",
2083 title = "Solubility of Carbon in Silicon and Germanium",
2086 journal = "J. Chem. Phys.",
2089 pages = "1551--1555",
2090 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2091 doi = "10.1063/1.1730236",
2092 notes = "solubility of c in c-si, si-c phase diagram",
2096 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2097 F. W. Saris and W. Vandervorst",
2099 title = "Role of {C} and {B} clusters in transient diffusion of
2103 journal = "Appl. Phys. Lett.",
2106 pages = "1150--1152",
2107 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2108 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2110 URL = "http://link.aip.org/link/?APL/68/1150/1",
2111 doi = "10.1063/1.115706",
2112 notes = "suppression of transient enhanced diffusion (ted)",
2116 title = "Implantation and transient boron diffusion: the role
2117 of the silicon self-interstitial",
2118 journal = "Nucl. Instrum. Methods Phys. Res. B",
2123 note = "Selected Papers of the Tenth International Conference
2124 on Ion Implantation Technology (IIT '94)",
2126 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2127 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2128 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2133 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2134 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2135 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2138 title = "Physical mechanisms of transient enhanced dopant
2139 diffusion in ion-implanted silicon",
2142 journal = "J. Appl. Phys.",
2145 pages = "6031--6050",
2146 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2147 doi = "10.1063/1.364452",
2148 notes = "ted, transient enhanced diffusion, c silicon trap",
2152 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2154 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2155 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2158 journal = "Appl. Phys. Lett.",
2162 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2163 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2164 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2166 URL = "http://link.aip.org/link/?APL/64/324/1",
2167 doi = "10.1063/1.111195",
2168 notes = "beta sic nano crystals in si, mbe, annealing",
2172 author = "Richard A. Soref",
2174 title = "Optical band gap of the ternary semiconductor Si[sub 1
2175 - x - y]Ge[sub x]{C}[sub y]",
2178 journal = "J. Appl. Phys.",
2181 pages = "2470--2472",
2182 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2183 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2185 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2186 doi = "10.1063/1.349403",
2187 notes = "band gap of strained si by c",
2191 author = "E Kasper",
2192 title = "Superlattices of group {IV} elements, a new
2193 possibility to produce direct band gap material",
2194 journal = "Physica Scripta",
2197 URL = "http://stacks.iop.org/1402-4896/T35/232",
2199 notes = "superlattices, convert indirect band gap into a
2204 author = "H. J. Osten and J. Griesche and S. Scalese",
2206 title = "Substitutional carbon incorporation in epitaxial
2207 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2208 molecular beam epitaxy",
2211 journal = "Appl. Phys. Lett.",
2215 keywords = "molecular beam epitaxial growth; semiconductor growth;
2216 wide band gap semiconductors; interstitials; silicon
2218 URL = "http://link.aip.org/link/?APL/74/836/1",
2219 doi = "10.1063/1.123384",
2220 notes = "substitutional c in si",
2223 @Article{hohenberg64,
2224 title = "Inhomogeneous Electron Gas",
2225 author = "P. Hohenberg and W. Kohn",
2226 journal = "Phys. Rev.",
2229 pages = "B864--B871",
2233 doi = "10.1103/PhysRev.136.B864",
2234 publisher = "American Physical Society",
2235 notes = "density functional theory, dft",
2239 title = "Self-Consistent Equations Including Exchange and
2240 Correlation Effects",
2241 author = "W. Kohn and L. J. Sham",
2242 journal = "Phys. Rev.",
2245 pages = "A1133--A1138",
2249 doi = "10.1103/PhysRev.140.A1133",
2250 publisher = "American Physical Society",
2251 notes = "dft, exchange and correlation",
2255 title = "Strain-stabilized highly concentrated pseudomorphic
2256 $Si1-x$$Cx$ layers in Si",
2257 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2259 journal = "Phys. Rev. Lett.",
2262 pages = "3578--3581",
2266 doi = "10.1103/PhysRevLett.72.3578",
2267 publisher = "American Physical Society",
2268 notes = "high c concentration in si, heterostructure, strained
2273 title = "Electron Transport Model for Strained Silicon-Carbon
2275 author = "Shu-Tong Chang and Chung-Yi Lin",
2276 journal = "Japanese J. Appl. Phys.",
2279 pages = "2257--2262",
2282 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2283 doi = "10.1143/JJAP.44.2257",
2284 publisher = "The Japan Society of Applied Physics",
2285 notes = "enhance of electron mobility in starined si",
2289 author = "H. J. Osten and P. Gaworzewski",
2291 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2292 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2296 journal = "J. Appl. Phys.",
2299 pages = "4977--4981",
2300 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2301 semiconductors; semiconductor epitaxial layers; carrier
2302 density; Hall mobility; interstitials; defect states",
2303 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2304 doi = "10.1063/1.366364",
2305 notes = "charge transport in strained si",
2309 title = "Carbon-mediated aggregation of self-interstitials in
2310 silicon: {A} large-scale molecular dynamics study",
2311 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2312 journal = "Phys. Rev. B",
2319 doi = "10.1103/PhysRevB.69.155214",
2320 publisher = "American Physical Society",
2321 notes = "simulation using promising tersoff reparametrization",
2325 title = "Event-Based Relaxation of Continuous Disordered
2327 author = "G. T. Barkema and Normand Mousseau",
2328 journal = "Phys. Rev. Lett.",
2331 pages = "4358--4361",
2335 doi = "10.1103/PhysRevLett.77.4358",
2336 publisher = "American Physical Society",
2337 notes = "activation relaxation technique, art, speed up slow
2342 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2343 Minoukadeh and F. Willaime",
2345 title = "Some improvements of the activation-relaxation
2346 technique method for finding transition pathways on
2347 potential energy surfaces",
2350 journal = "J. Chem. Phys.",
2356 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2357 surfaces; vacancies (crystal)",
2358 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2359 doi = "10.1063/1.3088532",
2360 notes = "improvements to art, refs for methods to find
2361 transition pathways",
2364 @Article{parrinello81,
2365 author = "M. Parrinello and A. Rahman",
2367 title = "Polymorphic transitions in single crystals: {A} new
2368 molecular dynamics method",
2371 journal = "J. Appl. Phys.",
2374 pages = "7182--7190",
2375 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2376 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2377 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2378 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2379 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2381 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2382 doi = "10.1063/1.328693",
2385 @Article{stillinger85,
2386 title = "Computer simulation of local order in condensed phases
2388 author = "Frank H. Stillinger and Thomas A. Weber",
2389 journal = "Phys. Rev. B",
2392 pages = "5262--5271",
2396 doi = "10.1103/PhysRevB.31.5262",
2397 publisher = "American Physical Society",
2401 title = "Empirical potential for hydrocarbons for use in
2402 simulating the chemical vapor deposition of diamond
2404 author = "Donald W. Brenner",
2405 journal = "Phys. Rev. B",
2408 pages = "9458--9471",
2412 doi = "10.1103/PhysRevB.42.9458",
2413 publisher = "American Physical Society",
2414 notes = "brenner hydro carbons",
2418 title = "Modeling of Covalent Bonding in Solids by Inversion of
2419 Cohesive Energy Curves",
2420 author = "Martin Z. Bazant and Efthimios Kaxiras",
2421 journal = "Phys. Rev. Lett.",
2424 pages = "4370--4373",
2428 doi = "10.1103/PhysRevLett.77.4370",
2429 publisher = "American Physical Society",
2430 notes = "first si edip",
2434 title = "Environment-dependent interatomic potential for bulk
2436 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2438 journal = "Phys. Rev. B",
2441 pages = "8542--8552",
2445 doi = "10.1103/PhysRevB.56.8542",
2446 publisher = "American Physical Society",
2447 notes = "second si edip",
2451 title = "Interatomic potential for silicon defects and
2453 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2454 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2455 journal = "Phys. Rev. B",
2458 pages = "2539--2550",
2462 doi = "10.1103/PhysRevB.58.2539",
2463 publisher = "American Physical Society",
2464 notes = "latest si edip, good dislocation explanation",
2468 title = "{PARCAS} molecular dynamics code",
2469 author = "K. Nordlund",
2474 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2476 author = "Arthur F. Voter",
2477 journal = "Phys. Rev. Lett.",
2480 pages = "3908--3911",
2484 doi = "10.1103/PhysRevLett.78.3908",
2485 publisher = "American Physical Society",
2486 notes = "hyperdynamics, accelerated md",
2490 author = "Arthur F. Voter",
2492 title = "A method for accelerating the molecular dynamics
2493 simulation of infrequent events",
2496 journal = "J. Chem. Phys.",
2499 pages = "4665--4677",
2500 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2501 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2502 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2503 energy functions; surface diffusion; reaction kinetics
2504 theory; potential energy surfaces",
2505 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2506 doi = "10.1063/1.473503",
2507 notes = "improved hyperdynamics md",
2510 @Article{sorensen2000,
2511 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2513 title = "Temperature-accelerated dynamics for simulation of
2517 journal = "J. Chem. Phys.",
2520 pages = "9599--9606",
2521 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2522 MOLECULAR DYNAMICS METHOD; surface diffusion",
2523 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2524 doi = "10.1063/1.481576",
2525 notes = "temperature accelerated dynamics, tad",
2529 title = "Parallel replica method for dynamics of infrequent
2531 author = "Arthur F. Voter",
2532 journal = "Phys. Rev. B",
2535 pages = "R13985--R13988",
2539 doi = "10.1103/PhysRevB.57.R13985",
2540 publisher = "American Physical Society",
2541 notes = "parallel replica method, accelerated md",
2545 author = "Xiongwu Wu and Shaomeng Wang",
2547 title = "Enhancing systematic motion in molecular dynamics
2551 journal = "J. Chem. Phys.",
2554 pages = "9401--9410",
2555 keywords = "molecular dynamics method; argon; Lennard-Jones
2556 potential; crystallisation; liquid theory",
2557 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2558 doi = "10.1063/1.478948",
2559 notes = "self guided md, sgmd, accelerated md, enhancing
2563 @Article{choudhary05,
2564 author = "Devashish Choudhary and Paulette Clancy",
2566 title = "Application of accelerated molecular dynamics schemes
2567 to the production of amorphous silicon",
2570 journal = "J. Chem. Phys.",
2576 keywords = "molecular dynamics method; silicon; glass structure;
2577 amorphous semiconductors",
2578 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2579 doi = "10.1063/1.1878733",
2580 notes = "explanation of sgmd and hyper md, applied to amorphous
2585 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2587 title = "Carbon precipitation in silicon: Why is it so
2591 journal = "Appl. Phys. Lett.",
2594 pages = "3336--3338",
2595 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2596 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2598 URL = "http://link.aip.org/link/?APL/62/3336/1",
2599 doi = "10.1063/1.109063",
2600 notes = "interfacial energy of cubic sic and si",
2603 @Article{chaussende08,
2604 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2605 journal = "J. Cryst. Growth",
2610 note = "Proceedings of the E-MRS Conference, Symposium G -
2611 Substrates of Wide Bandgap Materials",
2613 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2614 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2615 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2616 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2617 and A. Andreadou and E. K. Polychroniadis and C.
2618 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2619 notes = "3c-sic crystal growth, sic fabrication + links,
2623 @Article{chaussende07,
2624 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2625 title = "Status of Si{C} bulk growth processes",
2626 journal = "Journal of Physics D: Applied Physics",
2630 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2632 notes = "review of sic single crystal growth methods, process
2637 title = "Forces in Molecules",
2638 author = "R. P. Feynman",
2639 journal = "Phys. Rev.",
2646 doi = "10.1103/PhysRev.56.340",
2647 publisher = "American Physical Society",
2648 notes = "hellmann feynman forces",
2652 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2653 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2654 their Contrasting Properties",
2655 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2657 journal = "Phys. Rev. Lett.",
2664 doi = "10.1103/PhysRevLett.84.943",
2665 publisher = "American Physical Society",
2666 notes = "si sio2 and sic sio2 interface",
2669 @Article{djurabekova08,
2670 title = "Atomistic simulation of the interface structure of Si
2671 nanocrystals embedded in amorphous silica",
2672 author = "Flyura Djurabekova and Kai Nordlund",
2673 journal = "Phys. Rev. B",
2680 doi = "10.1103/PhysRevB.77.115325",
2681 publisher = "American Physical Society",
2682 notes = "nc-si in sio2, interface energy, nc construction,
2683 angular distribution, coordination",
2687 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2688 W. Liang and J. Zou",
2690 title = "Nature of interfacial defects and their roles in
2691 strain relaxation at highly lattice mismatched
2692 3{C}-Si{C}/Si (001) interface",
2695 journal = "J. Appl. Phys.",
2701 keywords = "anelastic relaxation; crystal structure; dislocations;
2702 elemental semiconductors; semiconductor growth;
2703 semiconductor thin films; silicon; silicon compounds;
2704 stacking faults; wide band gap semiconductors",
2705 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2706 doi = "10.1063/1.3234380",
2707 notes = "sic/si interface, follow refs, tem image
2708 deconvolution, dislocation defects",
2711 @Article{kitabatake93,
2712 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2715 title = "Simulations and experiments of Si{C} heteroepitaxial
2716 growth on Si(001) surface",
2719 journal = "J. Appl. Phys.",
2722 pages = "4438--4445",
2723 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2724 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2725 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2726 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2727 doi = "10.1063/1.354385",
2728 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2732 @Article{kitabatake97,
2733 author = "Makoto Kitabatake",
2734 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2735 Heteroepitaxial Growth",
2736 publisher = "WILEY-VCH Verlag",
2738 journal = "physica status solidi (b)",
2741 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2742 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2743 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2747 title = "Strain relaxation and thermal stability of the
2748 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2750 journal = "Thin Solid Films",
2757 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2758 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2759 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2760 keywords = "Strain relaxation",
2761 keywords = "Interfaces",
2762 keywords = "Thermal stability",
2763 keywords = "Molecular dynamics",
2764 notes = "tersoff sic/si interface study",
2768 title = "Ab initio Study of Misfit Dislocations at the
2769 $Si{C}/Si(001)$ Interface",
2770 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2772 journal = "Phys. Rev. Lett.",
2779 doi = "10.1103/PhysRevLett.89.156101",
2780 publisher = "American Physical Society",
2781 notes = "sic/si interface study",
2784 @Article{pizzagalli03,
2785 title = "Theoretical investigations of a highly mismatched
2786 interface: Si{C}/Si(001)",
2787 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2789 journal = "Phys. Rev. B",
2796 doi = "10.1103/PhysRevB.68.195302",
2797 publisher = "American Physical Society",
2798 notes = "tersoff md and ab initio sic/si interface study",
2802 title = "Atomic configurations of dislocation core and twin
2803 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2804 electron microscopy",
2805 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2806 H. Zheng and J. W. Liang",
2807 journal = "Phys. Rev. B",
2814 doi = "10.1103/PhysRevB.75.184103",
2815 publisher = "American Physical Society",
2816 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2820 @Article{hornstra58,
2821 title = "Dislocations in the diamond lattice",
2822 journal = "Journal of Physics and Chemistry of Solids",
2829 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2830 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2831 author = "J. Hornstra",
2832 notes = "dislocations in diamond lattice",
2836 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2837 Ion `Hot' Implantation",
2838 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2839 Hirao and Naoki Arai and Tomio Izumi",
2840 journal = "Japanese Journal of Applied Physics",
2842 number = "Part 1, No. 2A",
2846 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2847 doi = "10.1143/JJAP.31.343",
2848 publisher = "The Japan Society of Applied Physics",
2849 notes = "c-c bonds in c implanted si, hot implantation
2850 efficiency, c-c hard to break by thermal annealing",
2853 @Article{eichhorn99,
2854 author = "F. Eichhorn and N. Schell and W. Matz and R.
2857 title = "Strain and Si{C} particle formation in silicon
2858 implanted with carbon ions of medium fluence studied by
2859 synchrotron x-ray diffraction",
2862 journal = "J. Appl. Phys.",
2865 pages = "4184--4187",
2866 keywords = "silicon; carbon; elemental semiconductors; chemical
2867 interdiffusion; ion implantation; X-ray diffraction;
2868 precipitation; semiconductor doping",
2869 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2870 doi = "10.1063/1.371344",
2871 notes = "sic conversion by ibs, detected substitutional carbon,
2872 expansion of si lattice",
2875 @Article{eichhorn02,
2876 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2877 Metzger and W. Matz and R. K{\"{o}}gler",
2879 title = "Structural relation between Si and Si{C} formed by
2880 carbon ion implantation",
2883 journal = "J. Appl. Phys.",
2886 pages = "1287--1292",
2887 keywords = "silicon compounds; wide band gap semiconductors; ion
2888 implantation; annealing; X-ray scattering; transmission
2889 electron microscopy",
2890 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2891 doi = "10.1063/1.1428105",
2892 notes = "3c-sic alignement to si host in ibs depending on
2893 temperature, might explain c into c sub trafo",
2897 author = "G Lucas and M Bertolus and L Pizzagalli",
2898 title = "An environment-dependent interatomic potential for
2899 silicon carbide: calculation of bulk properties,
2900 high-pressure phases, point and extended defects, and
2901 amorphous structures",
2902 journal = "J. Phys.: Condens. Matter",
2906 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2912 author = "J Godet and L Pizzagalli and S Brochard and P
2914 title = "Comparison between classical potentials and ab initio
2915 methods for silicon under large shear",
2916 journal = "J. Phys.: Condens. Matter",
2920 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2922 notes = "comparison of empirical potentials, stillinger weber,
2923 edip, tersoff, ab initio",
2926 @Article{moriguchi98,
2927 title = "Verification of Tersoff's Potential for Static
2928 Structural Analysis of Solids of Group-{IV} Elements",
2929 author = "Koji Moriguchi and Akira Shintani",
2930 journal = "Japanese J. Appl. Phys.",
2932 number = "Part 1, No. 2",
2936 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2937 doi = "10.1143/JJAP.37.414",
2938 publisher = "The Japan Society of Applied Physics",
2939 notes = "tersoff stringent test",
2942 @Article{mazzarolo01,
2943 title = "Low-energy recoils in crystalline silicon: Quantum
2945 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2946 Lulli and Eros Albertazzi",
2947 journal = "Phys. Rev. B",
2954 doi = "10.1103/PhysRevB.63.195207",
2955 publisher = "American Physical Society",
2958 @Article{holmstroem08,
2959 title = "Threshold defect production in silicon determined by
2960 density functional theory molecular dynamics
2962 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2963 journal = "Phys. Rev. B",
2970 doi = "10.1103/PhysRevB.78.045202",
2971 publisher = "American Physical Society",
2972 notes = "threshold displacement comparison empirical and ab
2976 @Article{nordlund97,
2977 title = "Repulsive interatomic potentials calculated using
2978 Hartree-Fock and density-functional theory methods",
2979 journal = "Nucl. Instrum. Methods Phys. Res. B",
2986 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2987 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2988 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2989 notes = "repulsive ab initio potential",
2993 title = "Efficiency of ab-initio total energy calculations for
2994 metals and semiconductors using a plane-wave basis
2996 journal = "Comput. Mater. Sci.",
3003 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3004 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3005 author = "G. Kresse and J. Furthm{\"{u}}ller",
3010 title = "Projector augmented-wave method",
3011 author = "P. E. Bl{\"o}chl",
3012 journal = "Phys. Rev. B",
3015 pages = "17953--17979",
3019 doi = "10.1103/PhysRevB.50.17953",
3020 publisher = "American Physical Society",
3021 notes = "paw method",
3025 title = "Norm-Conserving Pseudopotentials",
3026 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3027 journal = "Phys. Rev. Lett.",
3030 pages = "1494--1497",
3034 doi = "10.1103/PhysRevLett.43.1494",
3035 publisher = "American Physical Society",
3036 notes = "norm-conserving pseudopotentials",
3039 @Article{vanderbilt90,
3040 title = "Soft self-consistent pseudopotentials in a generalized
3041 eigenvalue formalism",
3042 author = "David Vanderbilt",
3043 journal = "Phys. Rev. B",
3046 pages = "7892--7895",
3050 doi = "10.1103/PhysRevB.41.7892",
3051 publisher = "American Physical Society",
3052 notes = "vasp pseudopotentials",
3056 title = "Accurate and simple density functional for the
3057 electronic exchange energy: Generalized gradient
3059 author = "John P. Perdew and Yue Wang",
3060 journal = "Phys. Rev. B",
3063 pages = "8800--8802",
3067 doi = "10.1103/PhysRevB.33.8800",
3068 publisher = "American Physical Society",
3069 notes = "rapid communication gga",
3073 title = "Generalized gradient approximations for exchange and
3074 correlation: {A} look backward and forward",
3075 journal = "Physica B: Condensed Matter",
3082 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3083 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3084 author = "John P. Perdew",
3085 notes = "gga overview",
3089 title = "Atoms, molecules, solids, and surfaces: Applications
3090 of the generalized gradient approximation for exchange
3092 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3093 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3094 and Carlos Fiolhais",
3095 journal = "Phys. Rev. B",
3098 pages = "6671--6687",
3102 doi = "10.1103/PhysRevB.46.6671",
3103 publisher = "American Physical Society",
3104 notes = "gga pw91 (as in vasp)",
3107 @Article{baldereschi73,
3108 title = "Mean-Value Point in the Brillouin Zone",
3109 author = "A. Baldereschi",
3110 journal = "Phys. Rev. B",
3113 pages = "5212--5215",
3117 doi = "10.1103/PhysRevB.7.5212",
3118 publisher = "American Physical Society",
3119 notes = "mean value k point",
3123 title = "Ab initio pseudopotential calculations of dopant
3125 journal = "Comput. Mater. Sci.",
3132 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3133 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3134 author = "Jing Zhu",
3135 keywords = "TED (transient enhanced diffusion)",
3136 keywords = "Boron dopant",
3137 keywords = "Carbon dopant",
3138 keywords = "Defect",
3139 keywords = "ab initio pseudopotential method",
3140 keywords = "Impurity cluster",
3141 notes = "binding of c to si interstitial, c in si defects",
3145 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3147 title = "Si{C} buried layer formation by ion beam synthesis at
3151 journal = "Appl. Phys. Lett.",
3154 pages = "2646--2648",
3155 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3156 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3157 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3158 ELECTRON MICROSCOPY",
3159 URL = "http://link.aip.org/link/?APL/66/2646/1",
3160 doi = "10.1063/1.113112",
3161 notes = "precipitation mechanism by substitutional carbon, si
3162 self interstitials react with further implanted c",
3166 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3167 Kolodzey and A. Hairie",
3169 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3173 journal = "J. Appl. Phys.",
3176 pages = "4631--4633",
3177 keywords = "silicon compounds; precipitation; localised modes;
3178 semiconductor epitaxial layers; infrared spectra;
3179 Fourier transform spectra; thermal stability;
3181 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3182 doi = "10.1063/1.368703",
3183 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3187 author = "R Jones and B J Coomer and P R Briddon",
3188 title = "Quantum mechanical modelling of defects in
3190 journal = "J. Phys.: Condens. Matter",
3194 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3196 notes = "ab inito init, vibrational modes, c defect in si",
3200 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3201 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3202 J. E. Greene and S. G. Bishop",
3204 title = "Carbon incorporation pathways and lattice sites in
3205 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3206 molecular-beam epitaxy",
3209 journal = "J. Appl. Phys.",
3212 pages = "5716--5727",
3213 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3214 doi = "10.1063/1.1465122",
3215 notes = "c substitutional incorporation pathway, dft and expt",
3219 title = "Dynamic properties of interstitial carbon and
3220 carbon-carbon pair defects in silicon",
3221 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3223 journal = "Phys. Rev. B",
3226 pages = "2188--2194",
3230 doi = "10.1103/PhysRevB.55.2188",
3231 publisher = "American Physical Society",
3232 notes = "ab initio c in si and di-carbon defect, no formation
3233 energies, different migration barriers and paths",
3237 title = "Interstitial carbon and the carbon-carbon pair in
3238 silicon: Semiempirical electronic-structure
3240 author = "Matthew J. Burnard and Gary G. DeLeo",
3241 journal = "Phys. Rev. B",
3244 pages = "10217--10225",
3248 doi = "10.1103/PhysRevB.47.10217",
3249 publisher = "American Physical Society",
3250 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3251 carbon defect, formation energies",
3255 title = "Electronic structure of interstitial carbon in
3257 author = "Morgan Besson and Gary G. DeLeo",
3258 journal = "Phys. Rev. B",
3261 pages = "4028--4033",
3265 doi = "10.1103/PhysRevB.43.4028",
3266 publisher = "American Physical Society",
3270 title = "Review of atomistic simulations of surface diffusion
3271 and growth on semiconductors",
3272 journal = "Comput. Mater. Sci.",
3277 note = "Proceedings of the Workshop on Virtual Molecular Beam
3280 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3281 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3282 author = "Efthimios Kaxiras",
3283 notes = "might contain c 100 db formation energy, overview md,
3284 tight binding, first principles",
3287 @Article{kaukonen98,
3288 title = "Effect of {N} and {B} doping on the growth of {CVD}
3290 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3292 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3293 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3295 journal = "Phys. Rev. B",
3298 pages = "9965--9970",
3302 doi = "10.1103/PhysRevB.57.9965",
3303 publisher = "American Physical Society",
3304 notes = "constrained conjugate gradient relaxation technique
3309 title = "Correlation between the antisite pair and the ${DI}$
3311 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3312 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3314 journal = "Phys. Rev. B",
3321 doi = "10.1103/PhysRevB.67.155203",
3322 publisher = "American Physical Society",
3326 title = "Production and recovery of defects in Si{C} after
3327 irradiation and deformation",
3328 journal = "J. Nucl. Mater.",
3331 pages = "1803--1808",
3335 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3336 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3337 author = "J. Chen and P. Jung and H. Klein",
3341 title = "Accumulation, dynamic annealing and thermal recovery
3342 of ion-beam-induced disorder in silicon carbide",
3343 journal = "Nucl. Instrum. Methods Phys. Res. B",
3350 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3351 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3352 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3355 @Article{bockstedte03,
3356 title = "Ab initio study of the migration of intrinsic defects
3358 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3360 journal = "Phys. Rev. B",
3367 doi = "10.1103/PhysRevB.68.205201",
3368 publisher = "American Physical Society",
3369 notes = "defect migration in sic",
3373 title = "Theoretical study of vacancy diffusion and
3374 vacancy-assisted clustering of antisites in Si{C}",
3375 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3377 journal = "Phys. Rev. B",
3384 doi = "10.1103/PhysRevB.68.155208",
3385 publisher = "American Physical Society",
3389 journal = "Telegrafiya i Telefoniya bez Provodov",
3393 author = "O. V. Lossev",
3397 title = "Luminous carborundum detector and detection effect and
3398 oscillations with crystals",
3399 journal = "Philosophical Magazine Series 7",
3402 pages = "1024--1044",
3404 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3405 author = "O. V. Lossev",
3409 journal = "Physik. Zeitschr.",
3413 author = "O. V. Lossev",
3417 journal = "Physik. Zeitschr.",
3421 author = "O. V. Lossev",
3425 journal = "Physik. Zeitschr.",
3429 author = "O. V. Lossev",
3433 title = "A note on carborundum",
3434 journal = "Electrical World",
3438 author = "H. J. Round",
3441 @Article{vashishath08,
3442 title = "Recent trends in silicon carbide device research",
3443 journal = "Mj. Int. J. Sci. Tech.",
3448 author = "Munish Vashishath and Ashoke K. Chatterjee",
3449 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3450 notes = "sic polytype electronic properties",
3454 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3456 title = "Growth and Properties of beta-Si{C} Single Crystals",
3459 journal = "Journal of Applied Physics",
3463 URL = "http://link.aip.org/link/?JAP/37/333/1",
3464 doi = "10.1063/1.1707837",
3465 notes = "sic melt growth",
3469 author = "A. E. van Arkel and J. H. de Boer",
3470 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3472 publisher = "WILEY-VCH Verlag GmbH",
3474 journal = "Z. Anorg. Chem.",
3477 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3478 doi = "10.1002/zaac.19251480133",
3479 notes = "van arkel apparatus",
3483 author = "K. Moers",
3485 journal = "Z. Anorg. Chem.",
3488 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3493 author = "J. T. Kendall",
3494 title = "Electronic Conduction in Silicon Carbide",
3497 journal = "The Journal of Chemical Physics",
3501 URL = "http://link.aip.org/link/?JCP/21/821/1",
3502 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3507 author = "J. A. Lely",
3509 journal = "Ber. Deut. Keram. Ges.",
3512 notes = "lely sublimation growth process",
3515 @Article{knippenberg63,
3516 author = "W. F. Knippenberg",
3518 journal = "Philips Res. Repts.",
3521 notes = "acheson process",
3524 @Article{hoffmann82,
3525 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3528 title = "Silicon carbide blue light emitting diodes with
3529 improved external quantum efficiency",
3532 journal = "Journal of Applied Physics",
3535 pages = "6962--6967",
3536 keywords = "light emitting diodes; silicon carbides; quantum
3537 efficiency; visible radiation; experimental data;
3538 epitaxy; fabrication; medium temperature; layers;
3539 aluminium; nitrogen; substrates; pn junctions;
3540 electroluminescence; spectra; current density;
3542 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3543 doi = "10.1063/1.330041",
3544 notes = "blue led, sublimation process",
3548 author = "Philip Neudeck",
3549 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3550 Road 44135 Cleveland OH",
3551 title = "Progress in silicon carbide semiconductor electronics
3553 journal = "Journal of Electronic Materials",
3554 publisher = "Springer Boston",
3556 keyword = "Chemistry and Materials Science",
3560 URL = "http://dx.doi.org/10.1007/BF02659688",
3561 note = "10.1007/BF02659688",
3563 notes = "sic data, advantages of 3c sic",
3566 @Article{bhatnagar93,
3567 author = "M. Bhatnagar and B. J. Baliga",
3568 journal = "Electron Devices, IEEE Transactions on",
3569 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3576 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3577 rectifiers;Si;SiC;breakdown voltages;drift region
3578 properties;output characteristics;power MOSFETs;power
3579 semiconductor devices;switching characteristics;thermal
3580 analysis;Schottky-barrier diodes;electric breakdown of
3581 solids;insulated gate field effect transistors;power
3582 transistors;semiconductor materials;silicon;silicon
3583 compounds;solid-state rectifiers;thermal analysis;",
3584 doi = "10.1109/16.199372",
3586 notes = "comparison 3c 6h sic and si devices",
3590 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3591 A. Powell and C. S. Salupo and L. G. Matus",
3592 journal = "Electron Devices, IEEE Transactions on",
3593 title = "Electrical properties of epitaxial 3{C}- and
3594 6{H}-Si{C} p-n junction diodes produced side-by-side on
3595 6{H}-Si{C} substrates",
3601 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3602 C;6H-SiC layers;6H-SiC substrates;CVD
3603 process;SiC;chemical vapor deposition;doping;electrical
3604 properties;epitaxial layers;light
3605 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3606 diodes;polytype;rectification characteristics;reverse
3607 leakage current;reverse voltages;temperature;leakage
3608 currents;power electronics;semiconductor
3609 diodes;semiconductor epitaxial layers;semiconductor
3610 growth;semiconductor materials;silicon
3611 compounds;solid-state rectifiers;substrates;vapour
3612 phase epitaxial growth;",
3613 doi = "10.1109/16.285038",
3615 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3620 author = "N. Schulze and D. L. Barrett and G. Pensl",
3622 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3623 single crystals by physical vapor transport",
3626 journal = "Applied Physics Letters",
3629 pages = "1632--1634",
3630 keywords = "silicon compounds; semiconductor materials;
3631 semiconductor growth; crystal growth from vapour;
3632 photoluminescence; Hall mobility",
3633 URL = "http://link.aip.org/link/?APL/72/1632/1",
3634 doi = "10.1063/1.121136",
3635 notes = "micropipe free 6h-sic pvt growth",
3639 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3641 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3644 journal = "Applied Physics Letters",
3648 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3649 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3650 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3651 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3653 URL = "http://link.aip.org/link/?APL/50/221/1",
3654 doi = "10.1063/1.97667",
3655 notes = "apb 3c-sic heteroepitaxy on si",
3658 @Article{shibahara86,
3659 title = "Surface morphology of cubic Si{C}(100) grown on
3660 Si(100) by chemical vapor deposition",
3661 journal = "Journal of Crystal Growth",
3668 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3669 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3670 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3672 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3675 @Article{desjardins96,
3676 author = "P. Desjardins and J. E. Greene",
3678 title = "Step-flow epitaxial growth on two-domain surfaces",
3681 journal = "Journal of Applied Physics",
3684 pages = "1423--1434",
3685 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3686 FILM GROWTH; SURFACE STRUCTURE",
3687 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3688 doi = "10.1063/1.360980",
3689 notes = "apb model",
3693 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3695 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3696 carbonization of silicon",
3699 journal = "Journal of Applied Physics",
3702 pages = "2070--2073",
3703 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3704 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3706 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3707 doi = "10.1063/1.360184",
3708 notes = "ssmbe of sic on si, lower temperatures",
3712 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3713 {MBE} using surface superstructure",
3714 journal = "Journal of Crystal Growth",
3721 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3722 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3723 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3724 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3725 notes = "gas source mbe of 3c-sic on 6h-sic",
3728 @Article{yoshinobu92,
3729 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3730 and Takashi Fuyuki and Hiroyuki Matsunami",
3732 title = "Lattice-matched epitaxial growth of single crystalline
3733 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3734 molecular beam epitaxy",
3737 journal = "Applied Physics Letters",
3741 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3742 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3743 INTERFACE STRUCTURE",
3744 URL = "http://link.aip.org/link/?APL/60/824/1",
3745 doi = "10.1063/1.107430",
3746 notes = "gas source mbe of 3c-sic on 6h-sic",
3749 @Article{yoshinobu90,
3750 title = "Atomic level control in gas source {MBE} growth of
3752 journal = "Journal of Crystal Growth",
3759 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3760 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3761 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3762 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3763 notes = "gas source mbe of 3c-sic on 3c-sic",
3767 title = "Atomic layer epitaxy controlled by surface
3768 superstructures in Si{C}",
3769 journal = "Thin Solid Films",
3776 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3777 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3778 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3780 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3785 title = "Microscopic mechanisms of accurate layer-by-layer
3786 growth of [beta]-Si{C}",
3787 journal = "Thin Solid Films",
3794 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3795 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3796 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3797 and S. Misawa and E. Sakuma and S. Yoshida",
3798 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3803 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3805 title = "Effects of gas flow ratio on silicon carbide thin film
3806 growth mode and polytype formation during gas-source
3807 molecular beam epitaxy",
3810 journal = "Applied Physics Letters",
3813 pages = "2851--2853",
3814 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3815 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3816 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3818 URL = "http://link.aip.org/link/?APL/65/2851/1",
3819 doi = "10.1063/1.112513",
3820 notes = "gas source mbe of 6h-sic on 6h-sic",
3824 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3825 title = "Heterointerface Control and Epitaxial Growth of
3826 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3827 publisher = "WILEY-VCH Verlag",
3829 journal = "physica status solidi (b)",
3832 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3837 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3838 journal = "Journal of Crystal Growth",
3845 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3846 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3847 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3848 keywords = "Reflection high-energy electron diffraction (RHEED)",
3849 keywords = "Scanning electron microscopy (SEM)",
3850 keywords = "Silicon carbide",
3851 keywords = "Silicon",
3852 keywords = "Island growth",
3853 notes = "lower temperature, 550-700",
3856 @Article{hatayama95,
3857 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3858 on Si using hydrocarbon radicals by gas source
3859 molecular beam epitaxy",
3860 journal = "Journal of Crystal Growth",
3867 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3868 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3869 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3870 and Hiroyuki Matsunami",
3874 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3875 title = "The Preference of Silicon Carbide for Growth in the
3876 Metastable Cubic Form",
3877 journal = "Journal of the American Ceramic Society",
3880 publisher = "Blackwell Publishing Ltd",
3882 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
3883 doi = "10.1111/j.1151-2916.1991.tb06811.x",
3884 pages = "2630--2633",
3885 keywords = "silicon carbide, crystal growth, crystal structure,
3886 calculations, stability",
3888 notes = "3c-sic metastable, 3c-sic preferred growth, sic
3889 polytype dft calculation refs",
3892 @Article{allendorf91,
3893 title = "The adsorption of {H}-atoms on polycrystalline
3894 [beta]-silicon carbide",
3895 journal = "Surface Science",
3902 doi = "DOI: 10.1016/0039-6028(91)90912-C",
3903 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
3904 author = "Mark D. Allendorf and Duane A. Outka",
3905 notes = "h adsorption on 3c-sic",
3908 @Article{eaglesham93,
3909 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
3910 D. P. Adams and S. M. Yalisove",
3912 title = "Effect of {H} on Si molecular-beam epitaxy",
3915 journal = "Journal of Applied Physics",
3918 pages = "6615--6618",
3919 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
3920 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
3921 DIFFUSION; ADSORPTION",
3922 URL = "http://link.aip.org/link/?JAP/74/6615/1",
3923 doi = "10.1063/1.355101",
3924 notes = "h incorporation on si surface, lower surface