2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Comparative study of silicon empirical interatomic
102 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
103 journal = "Phys. Rev. B",
106 pages = "2250--2279",
110 doi = "10.1103/PhysRevB.46.2250",
111 publisher = "American Physical Society",
112 notes = "comparison of classical potentials for si",
116 title = "Stress relaxation in $a-Si$ induced by ion
118 author = "H. M. Urbassek M. Koster",
119 journal = "Phys. Rev. B",
122 pages = "11219--11224",
126 doi = "10.1103/PhysRevB.62.11219",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
131 @Article{breadmore99,
132 title = "Direct simulation of ion-beam-induced stressing and
133 amorphization of silicon",
134 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
135 journal = "Phys. Rev. B",
138 pages = "12610--12616",
142 doi = "10.1103/PhysRevB.60.12610",
143 publisher = "American Physical Society",
144 notes = "virial derivation for 3-body tersoff potential",
148 author = "Henri Moissan",
149 title = "Nouvelles recherches sur la météorité de Cañon
151 journal = "Comptes rendus de l'Académie des Sciences",
158 author = "Y. S. Park",
159 title = "Si{C} Materials and Devices",
160 publisher = "Academic Press",
161 address = "San Diego",
166 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
167 Calvin H. Carter Jr. and D. Asbury",
168 title = "Si{C} Seeded Boule Growth",
169 journal = "Materials Science Forum",
173 notes = "modified lely process, micropipes",
177 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
178 Thermodynamical Properties of Lennard-Jones Molecules",
179 author = "Loup Verlet",
180 journal = "Phys. Rev.",
186 doi = "10.1103/PhysRev.159.98",
187 publisher = "American Physical Society",
188 notes = "velocity verlet integration algorithm equation of
192 @Article{berendsen84,
193 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
194 Gunsteren and A. DiNola and J. R. Haak",
196 title = "Molecular dynamics with coupling to an external bath",
199 journal = "The Journal of Chemical Physics",
202 pages = "3684--3690",
203 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
204 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
205 URL = "http://link.aip.org/link/?JCP/81/3684/1",
206 doi = "10.1063/1.448118",
207 notes = "berendsen thermostat barostat",
211 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
213 title = "Molecular dynamics determination of defect energetics
214 in beta -Si{C} using three representative empirical
216 journal = "Modelling and Simulation in Materials Science and
221 URL = "http://stacks.iop.org/0965-0393/3/615",
222 notes = "comparison of tersoff, pearson and eam for defect
223 energetics in sic; (m)eam parameters for sic",
228 title = "Relationship between the embedded-atom method and
230 author = "Donald W. Brenner",
231 journal = "Phys. Rev. Lett.",
238 doi = "10.1103/PhysRevLett.63.1022",
239 publisher = "American Physical Society",
240 notes = "relation of tersoff and eam potential",
244 title = "Molecular-dynamics study of self-interstitials in
246 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
247 journal = "Phys. Rev. B",
250 pages = "9552--9558",
254 doi = "10.1103/PhysRevB.35.9552",
255 publisher = "American Physical Society",
256 notes = "selft-interstitials in silicon, stillinger-weber,
257 calculation of defect formation energy, defect
262 title = "Extended interstitials in silicon and germanium",
263 author = "H. R. Schober",
264 journal = "Phys. Rev. B",
267 pages = "13013--13015",
271 doi = "10.1103/PhysRevB.39.13013",
272 publisher = "American Physical Society",
273 notes = "stillinger-weber silicon 110 stable and metastable
274 dumbbell configuration",
278 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
279 Defect accumulation, topological features, and
281 author = "F. Gao and W. J. Weber",
282 journal = "Phys. Rev. B",
289 doi = "10.1103/PhysRevB.66.024106",
290 publisher = "American Physical Society",
291 notes = "sic intro, si cascade in 3c-sic, amorphization,
292 tersoff modified, pair correlation of amorphous sic, md
296 @Article{devanathan98,
297 title = "Computer simulation of a 10 ke{V} Si displacement
299 journal = "Nuclear Instruments and Methods in Physics Research
300 Section B: Beam Interactions with Materials and Atoms",
306 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
307 author = "R. Devanathan and W. J. Weber and T. Diaz de la
309 notes = "modified tersoff short range potential, ab initio
313 @Article{devanathan98_2,
314 title = "Displacement threshold energies in [beta]-Si{C}",
315 journal = "Journal of Nuclear Materials",
321 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
322 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
324 notes = "modified tersoff, ab initio, combined ab initio
329 title = "Si{C}/Si heteroepitaxial growth",
330 author = "M. Kitabatake",
331 journal = "Thin Solid Films",
336 notes = "md simulation, sic si heteroepitaxy, mbe",
340 title = "Intrinsic point defects in crystalline silicon:
341 Tight-binding molecular dynamics studies of
342 self-diffusion, interstitial-vacancy recombination, and
344 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
346 journal = "Phys. Rev. B",
349 pages = "14279--14289",
353 doi = "10.1103/PhysRevB.55.14279",
354 publisher = "American Physical Society",
355 notes = "si self interstitial, diffusion, tbmd",
359 title = "Tight-binding theory of native point defects in
361 author = "L. Colombo",
362 journal = "Annu. Rev. Mater. Res.",
367 doi = "10.1146/annurev.matsci.32.111601.103036",
368 publisher = "Annual Reviews",
369 notes = "si self interstitial, tbmd, virial stress",
373 title = "Ab initio and empirical-potential studies of defect
374 properties in $3{C}-Si{C}$",
375 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
377 journal = "Phys. Rev. B",
384 doi = "10.1103/PhysRevB.64.245208",
385 publisher = "American Physical Society",
386 notes = "defects in 3c-sic",
389 @Article{mattoni2002,
390 title = "Self-interstitial trapping by carbon complexes in
391 crystalline silicon",
392 author = "A. Mattoni and F. Bernardini and L. Colombo",
393 journal = "Phys. Rev. B",
400 doi = "10.1103/PhysRevB.66.195214",
401 publisher = "American Physical Society",
402 notes = "c in c-si, diffusion, interstitial configuration +
403 links, interaction of carbon and silicon
408 title = "Calculations of Silicon Self-Interstitial Defects",
409 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
411 journal = "Phys. Rev. Lett.",
414 pages = "2351--2354",
418 doi = "10.1103/PhysRevLett.83.2351",
419 publisher = "American Physical Society",
420 notes = "nice images of the defects, si defect overview +
425 title = "Identification of the migration path of interstitial
427 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
428 journal = "Phys. Rev. B",
431 pages = "7439--7442",
435 doi = "10.1103/PhysRevB.50.7439",
436 publisher = "American Physical Society",
437 notes = "carbon interstitial migration path shown, 001 c-si
442 title = "Ab initio investigation of carbon-related defects in
444 author = "A. Dal Pino and Andrew M. Rappe and J. D.
446 journal = "Phys. Rev. B",
449 pages = "12554--12557",
453 doi = "10.1103/PhysRevB.47.12554",
454 publisher = "American Physical Society",
455 notes = "c interstitials in crystalline silicon",
459 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
461 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
462 Sokrates T. Pantelides",
463 journal = "Phys. Rev. Lett.",
466 pages = "1814--1817",
470 doi = "10.1103/PhysRevLett.52.1814",
471 publisher = "American Physical Society",
472 notes = "microscopic theory diffusion silicon dft migration
477 title = "Short-range order, bulk moduli, and physical trends in
478 c-$Si1-x$$Cx$ alloys",
479 author = "P. C. Kelires",
480 journal = "Phys. Rev. B",
483 pages = "8784--8787",
487 doi = "10.1103/PhysRevB.55.8784",
488 publisher = "American Physical Society",
489 notes = "c strained si, montecarlo md, bulk moduli, next
494 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
495 Application to the $Si1-x-yGexCy$ System",
496 author = "P. C. Kelires",
497 journal = "Phys. Rev. Lett.",
500 pages = "1114--1117",
504 doi = "10.1103/PhysRevLett.75.1114",
505 publisher = "American Physical Society",
506 notes = "mc md, strain compensation in si ge by c insertion",
510 title = "Low temperature electron irradiation of silicon
512 journal = "Solid State Communications",
519 doi = "DOI: 10.1016/0038-1098(70)90074-8",
520 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
521 author = "A. R. Bean and R. C. Newman",
525 title = "{EPR} Observation of the Isolated Interstitial Carbon
527 author = "G. D. Watkins and K. L. Brower",
528 journal = "Phys. Rev. Lett.",
531 pages = "1329--1332",
535 doi = "10.1103/PhysRevLett.36.1329",
536 publisher = "American Physical Society",
537 notes = "epr observations of 100 interstitial carbon atom in
542 title = "{EPR} identification of the single-acceptor state of
543 interstitial carbon in silicon",
544 author = "G. D. Watkins L. W. Song",
545 journal = "Phys. Rev. B",
548 pages = "5759--5764",
552 doi = "10.1103/PhysRevB.42.5759",
553 publisher = "American Physical Society",
554 notes = "carbon diffusion in silicon",
558 author = "A K Tipping and R C Newman",
559 title = "The diffusion coefficient of interstitial carbon in
561 journal = "Semiconductor Science and Technology",
565 URL = "http://stacks.iop.org/0268-1242/2/315",
567 notes = "diffusion coefficient of carbon interstitials in
572 title = "Carbon incorporation into Si at high concentrations by
573 ion implantation and solid phase epitaxy",
574 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
575 Picraux and J. K. Watanabe and J. W. Mayer",
576 journal = "J. Appl. Phys.",
581 doi = "10.1063/1.360806",
582 notes = "strained silicon, carbon supersaturation",
585 @Article{laveant2002,
586 title = "Epitaxy of carbon-rich silicon with {MBE}",
587 author = "P. Laveant and G. Gerth and P. Werner and U.
589 journal = "Materials Science and Engineering B",
593 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
594 notes = "low c in si, tensile stress to compensate compressive
595 stress, avoid sic precipitation",
599 author = "P. Werner and S. Eichler and G. Mariani and R.
600 K{\"{o}}gler and W. Skorupa",
601 title = "Investigation of {C}[sub x]Si defects in {C} implanted
602 silicon by transmission electron microscopy",
605 journal = "Applied Physics Letters",
609 keywords = "silicon; ion implantation; carbon; crystal defects;
610 transmission electron microscopy; annealing; positron
611 annihilation; secondary ion mass spectroscopy; buried
612 layers; precipitation",
613 URL = "http://link.aip.org/link/?APL/70/252/1",
614 doi = "10.1063/1.118381",
615 notes = "si-c complexes, agglomerate, sic in si matrix, sic
620 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
621 Picraux and J. K. Watanabe and J. W. Mayer",
623 title = "Precipitation and relaxation in strained Si[sub 1 -
624 y]{C}[sub y]/Si heterostructures",
627 journal = "Journal of Applied Physics",
630 pages = "3656--3668",
631 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
632 URL = "http://link.aip.org/link/?JAP/76/3656/1",
633 doi = "10.1063/1.357429",
634 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
638 title = "Prospects for device implementation of wide band gap
640 author = "J. H. Edgar",
641 journal = "J. Mater. Res.",
646 doi = "10.1557/JMR.1992.0235",
647 notes = "properties wide band gap semiconductor, sic
651 @Article{zirkelbach2007,
652 title = "Monte Carlo simulation study of a selforganisation
653 process leading to ordered precipitate structures",
654 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
656 journal = "Nucl. Instr. and Meth. B",
663 doi = "doi:10.1016/j.nimb.2006.12.118",
664 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
668 @Article{zirkelbach2006,
669 title = "Monte-Carlo simulation study of the self-organization
670 of nanometric amorphous precipitates in regular arrays
671 during ion irradiation",
672 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
674 journal = "Nucl. Instr. and Meth. B",
681 doi = "doi:10.1016/j.nimb.2005.08.162",
682 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
686 @Article{zirkelbach2005,
687 title = "Modelling of a selforganization process leading to
688 periodic arrays of nanometric amorphous precipitates by
690 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
692 journal = "Comp. Mater. Sci.",
699 doi = "doi:10.1016/j.commatsci.2004.12.016",
700 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
705 title = "Controlling the density distribution of Si{C}
706 nanocrystals for the ion beam synthesis of buried Si{C}
708 journal = "Nuclear Instruments and Methods in Physics Research
709 Section B: Beam Interactions with Materials and Atoms",
716 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
717 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
718 author = "J. K. N. Lindner and B. Stritzker",
719 notes = "two-step implantation process",
722 @Article{lindner99_2,
723 title = "Mechanisms in the ion beam synthesis of Si{C} layers
725 journal = "Nuclear Instruments and Methods in Physics Research
726 Section B: Beam Interactions with Materials and Atoms",
733 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
734 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
735 author = "J. K. N. Lindner and B. Stritzker",
739 title = "Ion beam synthesis of buried Si{C} layers in silicon:
740 Basic physical processes",
741 journal = "Nuclear Instruments and Methods in Physics Research
742 Section B: Beam Interactions with Materials and Atoms",
749 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
750 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
751 author = "Jörg K. N. Lindner",
755 title = "High-dose carbon implantations into silicon:
756 fundamental studies for new technological tricks",
757 author = "J. K. N. Lindner",
758 journal = "Appl. Phys. A",
762 doi = "10.1007/s00339-002-2062-8",
763 notes = "ibs, burried sic layers",
767 author = "B. J. Alder and T. E. Wainwright",
768 title = "Phase Transition for a Hard Sphere System",
771 journal = "The Journal of Chemical Physics",
774 pages = "1208--1209",
775 URL = "http://link.aip.org/link/?JCP/27/1208/1",
776 doi = "10.1063/1.1743957",
780 author = "B. J. Alder and T. E. Wainwright",
781 title = "Studies in Molecular Dynamics. {I}. General Method",
784 journal = "The Journal of Chemical Physics",
788 URL = "http://link.aip.org/link/?JCP/31/459/1",
789 doi = "10.1063/1.1730376",
792 @Article{tersoff_si1,
793 title = "New empirical model for the structural properties of
795 author = "J. Tersoff",
796 journal = "Phys. Rev. Lett.",
803 doi = "10.1103/PhysRevLett.56.632",
804 publisher = "American Physical Society",
807 @Article{tersoff_si2,
808 title = "New empirical approach for the structure and energy of
810 author = "J. Tersoff",
811 journal = "Phys. Rev. B",
814 pages = "6991--7000",
818 doi = "10.1103/PhysRevB.37.6991",
819 publisher = "American Physical Society",
822 @Article{tersoff_si3,
823 title = "Empirical interatomic potential for silicon with
824 improved elastic properties",
825 author = "J. Tersoff",
826 journal = "Phys. Rev. B",
829 pages = "9902--9905",
833 doi = "10.1103/PhysRevB.38.9902",
834 publisher = "American Physical Society",
838 title = "Empirical Interatomic Potential for Carbon, with
839 Applications to Amorphous Carbon",
840 author = "J. Tersoff",
841 journal = "Phys. Rev. Lett.",
844 pages = "2879--2882",
848 doi = "10.1103/PhysRevLett.61.2879",
849 publisher = "American Physical Society",
853 title = "Modeling solid-state chemistry: Interatomic potentials
854 for multicomponent systems",
855 author = "J. Tersoff",
856 journal = "Phys. Rev. B",
859 pages = "5566--5568",
863 doi = "10.1103/PhysRevB.39.5566",
864 publisher = "American Physical Society",
868 title = "Carbon defects and defect reactions in silicon",
869 author = "J. Tersoff",
870 journal = "Phys. Rev. Lett.",
873 pages = "1757--1760",
877 doi = "10.1103/PhysRevLett.64.1757",
878 publisher = "American Physical Society",
882 title = "Point defects and dopant diffusion in silicon",
883 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
884 journal = "Rev. Mod. Phys.",
891 doi = "10.1103/RevModPhys.61.289",
892 publisher = "American Physical Society",
896 title = "Silicon carbide: synthesis and processing",
897 journal = "Nuclear Instruments and Methods in Physics Research
898 Section B: Beam Interactions with Materials and Atoms",
903 note = "Radiation Effects in Insulators",
905 doi = "DOI: 10.1016/0168-583X(96)00065-1",
906 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
911 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
912 Lin and B. Sverdlov and M. Burns",
914 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
915 ZnSe-based semiconductor device technologies",
918 journal = "Journal of Applied Physics",
921 pages = "1363--1398",
922 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
923 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
924 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
926 URL = "http://link.aip.org/link/?JAP/76/1363/1",
927 doi = "10.1063/1.358463",
931 author = "Noch Unbekannt",
932 title = "How to find references",
933 journal = "Journal of Applied References",
940 title = "Atomistic simulation of thermomechanical properties of
942 author = "Meijie Tang and Sidney Yip",
943 journal = "Phys. Rev. B",
946 pages = "15150--15159",
949 doi = "10.1103/PhysRevB.52.15150",
950 notes = "modified tersoff, scale cutoff with volume, promising
951 tersoff reparametrization",
952 publisher = "American Physical Society",
956 title = "Silicon carbide as a new {MEMS} technology",
957 journal = "Sensors and Actuators A: Physical",
963 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
964 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
965 author = "Pasqualina M. Sarro",
967 keywords = "Silicon carbide",
968 keywords = "Micromachining",
969 keywords = "Mechanical stress",
973 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
974 semiconductor for high-temperature applications: {A}
976 journal = "Solid-State Electronics",
979 pages = "1409--1422",
982 doi = "DOI: 10.1016/0038-1101(96)00045-7",
983 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
984 author = "J. B. Casady and R. W. Johnson",
987 @Article{giancarli98,
988 title = "Design requirements for Si{C}/Si{C} composites
989 structural material in fusion power reactor blankets",
990 journal = "Fusion Engineering and Design",
996 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
997 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
998 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
999 Marois and N. B. Morley and J. F. Salavy",
1003 title = "Electrical and optical characterization of Si{C}",
1004 journal = "Physica B: Condensed Matter",
1010 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1011 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1012 author = "G. Pensl and W. J. Choyke",
1016 title = "Investigation of growth processes of ingots of silicon
1017 carbide single crystals",
1018 journal = "Journal of Crystal Growth",
1023 notes = "modifief lely process",
1025 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1026 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1027 author = "Yu. M. Tairov and V. F. Tsvetkov",
1031 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1033 title = "Growth and Characterization of Cubic Si{C}
1034 Single-Crystal Films on Si",
1037 journal = "Journal of The Electrochemical Society",
1040 pages = "1558--1565",
1041 keywords = "semiconductor materials; silicon compounds; carbon
1042 compounds; crystal morphology; electron mobility",
1043 URL = "http://link.aip.org/link/?JES/134/1558/1",
1044 doi = "10.1149/1.2100708",
1045 notes = "blue light emitting diodes (led)",
1049 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1050 and Hiroyuki Matsunami",
1051 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1055 journal = "Journal of Applied Physics",
1059 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1060 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1062 URL = "http://link.aip.org/link/?JAP/73/726/1",
1063 doi = "10.1063/1.353329",
1067 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1068 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1069 Yoganathan and J. Yang and P. Pirouz",
1071 title = "Growth of improved quality 3{C}-Si{C} films on
1072 6{H}-Si{C} substrates",
1075 journal = "Applied Physics Letters",
1078 pages = "1353--1355",
1079 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1080 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1081 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1083 URL = "http://link.aip.org/link/?APL/56/1353/1",
1084 doi = "10.1063/1.102512",
1088 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1089 Thokala and M. J. Loboda",
1091 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1092 films on 6{H}-Si{C} by chemical vapor deposition from
1096 journal = "Journal of Applied Physics",
1099 pages = "1271--1273",
1100 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1101 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1103 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1104 doi = "10.1063/1.360368",
1105 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1109 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1110 [alpha]-Si{C}(0001) at low temperatures by solid-source
1111 molecular beam epitaxy",
1112 journal = "Journal of Crystal Growth",
1117 notes = "solid source mbe",
1119 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1120 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1121 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1126 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1128 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1132 journal = "Applied Physics Letters",
1136 URL = "http://link.aip.org/link/?APL/18/509/1",
1137 notes = "first time sic by ibs",
1138 doi = "10.1063/1.1653516",
1142 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1143 J. Davis and G. E. Celler",
1145 title = "Formation of buried layers of beta-Si{C} using ion
1146 beam synthesis and incoherent lamp annealing",
1149 journal = "Applied Physics Letters",
1152 pages = "2242--2244",
1153 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1154 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1155 URL = "http://link.aip.org/link/?APL/51/2242/1",
1156 doi = "10.1063/1.98953",
1157 notes = "nice tem images, sic by ibs",
1161 author = "R. I. Scace and G. A. Slack",
1163 title = "Solubility of Carbon in Silicon and Germanium",
1166 journal = "The Journal of Chemical Physics",
1169 pages = "1551--1555",
1170 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1171 doi = "10.1063/1.1730236",
1172 notes = "solubility of c in c-si",
1176 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1177 F. W. Saris and W. Vandervorst",
1179 title = "Role of {C} and {B} clusters in transient diffusion of
1183 journal = "Applied Physics Letters",
1186 pages = "1150--1152",
1187 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1188 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1190 URL = "http://link.aip.org/link/?APL/68/1150/1",
1191 doi = "10.1063/1.115706",
1192 notes = "suppression of transient enhanced diffusion (ted)",
1196 title = "Implantation and transient boron diffusion: the role
1197 of the silicon self-interstitial",
1198 journal = "Nuclear Instruments and Methods in Physics Research
1199 Section B: Beam Interactions with Materials and Atoms",
1204 note = "Selected Papers of the Tenth International Conference
1205 on Ion Implantation Technology (IIT '94)",
1207 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1208 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1209 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1214 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1215 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1216 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1219 title = "Physical mechanisms of transient enhanced dopant
1220 diffusion in ion-implanted silicon",
1223 journal = "Journal of Applied Physics",
1226 pages = "6031--6050",
1227 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1228 doi = "10.1063/1.364452",
1229 notes = "ted, transient enhanced diffusion, c silicon trap",
1233 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1235 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1236 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1239 journal = "Applied Physics Letters",
1243 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1244 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1245 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1247 URL = "http://link.aip.org/link/?APL/64/324/1",
1248 doi = "10.1063/1.111195",
1249 notes = "beta sic nano crystals in si, mbe, annealing",
1253 author = "Richard A. Soref",
1255 title = "Optical band gap of the ternary semiconductor Si[sub 1
1256 - x - y]Ge[sub x]{C}[sub y]",
1259 journal = "Journal of Applied Physics",
1262 pages = "2470--2472",
1263 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1264 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1266 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1267 doi = "10.1063/1.349403",
1268 notes = "band gap of strained si by c",
1272 author = "E Kasper",
1273 title = "Superlattices of group {IV} elements, a new
1274 possibility to produce direct band gap material",
1275 journal = "Physica Scripta",
1278 URL = "http://stacks.iop.org/1402-4896/T35/232",
1280 notes = "superlattices, convert indirect band gap into a
1285 author = "H. J. Osten and J. Griesche and S. Scalese",
1287 title = "Substitutional carbon incorporation in epitaxial
1288 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1289 molecular beam epitaxy",
1292 journal = "Applied Physics Letters",
1296 keywords = "molecular beam epitaxial growth; semiconductor growth;
1297 wide band gap semiconductors; interstitials; silicon
1299 URL = "http://link.aip.org/link/?APL/74/836/1",
1300 doi = "10.1063/1.123384",
1301 notes = "substitutional c in si",
1304 @Article{hohenberg64,
1305 title = "Inhomogeneous Electron Gas",
1306 author = "P. Hohenberg and W. Kohn",
1307 journal = "Phys. Rev.",
1310 pages = "B864--B871",
1314 doi = "10.1103/PhysRev.136.B864",
1315 publisher = "American Physical Society",
1316 notes = "density functional theory, dft",
1320 title = "Self-Consistent Equations Including Exchange and
1321 Correlation Effects",
1322 author = "W. Kohn and L. J. Sham",
1323 journal = "Phys. Rev.",
1326 pages = "A1133--A1138",
1330 doi = "10.1103/PhysRev.140.A1133",
1331 publisher = "American Physical Society",
1332 notes = "dft, exchange and correlation",
1336 title = "Strain-stabilized highly concentrated pseudomorphic
1337 $Si1-x$$Cx$ layers in Si",
1338 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1340 journal = "Phys. Rev. Lett.",
1343 pages = "3578--3581",
1347 doi = "10.1103/PhysRevLett.72.3578",
1348 publisher = "American Physical Society",
1349 notes = "high c concentration in si, heterostructure, starined
1354 title = "Electron Transport Model for Strained Silicon-Carbon
1356 author = "Shu-Tong Chang and Chung-Yi Lin",
1357 journal = "Japanese Journal of Applied Physics",
1360 pages = "2257--2262",
1363 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1364 doi = "10.1143/JJAP.44.2257",
1365 publisher = "The Japan Society of Applied Physics",
1366 notes = "enhance of electron mobility in starined si",
1370 author = "H. J. Osten and P. Gaworzewski",
1372 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1373 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1377 journal = "Journal of Applied Physics",
1380 pages = "4977--4981",
1381 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1382 semiconductors; semiconductor epitaxial layers; carrier
1383 density; Hall mobility; interstitials; defect states",
1384 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1385 doi = "10.1063/1.366364",
1386 notes = "charge transport in strained si",
1390 title = "Carbon-mediated aggregation of self-interstitials in
1391 silicon: {A} large-scale molecular dynamics study",
1392 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1393 journal = "Phys. Rev. B",
1400 doi = "10.1103/PhysRevB.69.155214",
1401 publisher = "American Physical Society",
1402 notes = "simulation using promising tersoff reparametrization",
1406 title = "Event-Based Relaxation of Continuous Disordered
1408 author = "G. T. Barkema and Normand Mousseau",
1409 journal = "Phys. Rev. Lett.",
1412 pages = "4358--4361",
1416 doi = "10.1103/PhysRevLett.77.4358",
1417 publisher = "American Physical Society",
1418 notes = "activation relaxation technique, art, speed up slow
1423 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1424 Minoukadeh and F. Willaime",
1426 title = "Some improvements of the activation-relaxation
1427 technique method for finding transition pathways on
1428 potential energy surfaces",
1431 journal = "The Journal of Chemical Physics",
1437 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1438 surfaces; vacancies (crystal)",
1439 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1440 doi = "10.1063/1.3088532",
1441 notes = "improvements to art, refs for methods to find
1442 transition pathways",
1445 @Article{parrinello81,
1446 author = "M. Parrinello and A. Rahman",
1448 title = "Polymorphic transitions in single crystals: {A} new
1449 molecular dynamics method",
1452 journal = "Journal of Applied Physics",
1455 pages = "7182--7190",
1456 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1457 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1458 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1459 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1460 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1462 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1463 doi = "10.1063/1.328693",
1466 @Article{stillinger85,
1467 title = "Computer simulation of local order in condensed phases
1469 author = "Frank H. Stillinger and Thomas A. Weber",
1470 journal = "Phys. Rev. B",
1473 pages = "5262--5271",
1477 doi = "10.1103/PhysRevB.31.5262",
1478 publisher = "American Physical Society",
1482 title = "Environment-dependent interatomic potential for bulk
1484 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1486 journal = "Phys. Rev. B",
1489 pages = "8542--8552",
1493 doi = "10.1103/PhysRevB.56.8542",
1494 publisher = "American Physical Society",
1498 title = "Interatomic potential for silicon defects and
1500 author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
1501 Kaxiras and V. V. Bulatov and Sidney Yip",
1502 journal = "Phys. Rev. B",
1505 pages = "2539--2550",
1509 doi = "10.1103/PhysRevB.58.2539",
1510 publisher = "American Physical Society",
1514 title = "{PARCAS} molecular dynamics code",
1515 author = "K. Nordlund",
1520 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1522 author = "Arthur F. Voter",
1523 journal = "Phys. Rev. Lett.",
1526 pages = "3908--3911",
1530 doi = "10.1103/PhysRevLett.78.3908",
1531 publisher = "American Physical Society",
1532 notes = "hyperdynamics, accelerated md",
1536 author = "Arthur F. Voter",
1538 title = "A method for accelerating the molecular dynamics
1539 simulation of infrequent events",
1542 journal = "The Journal of Chemical Physics",
1545 pages = "4665--4677",
1546 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1547 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1548 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1549 energy functions; surface diffusion; reaction kinetics
1550 theory; potential energy surfaces",
1551 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1552 doi = "10.1063/1.473503",
1553 notes = "improved hyperdynamics md",
1556 @Article{sorensen2000,
1557 author = "Mads R. S\o rensen and Arthur F. Voter",
1559 title = "Temperature-accelerated dynamics for simulation of
1563 journal = "The Journal of Chemical Physics",
1566 pages = "9599--9606",
1567 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1568 MOLECULAR DYNAMICS METHOD; surface diffusion",
1569 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1570 doi = "10.1063/1.481576",
1571 notes = "temperature accelerated dynamics, tad",
1575 title = "Parallel replica method for dynamics of infrequent
1577 author = "Arthur F. Voter",
1578 journal = "Phys. Rev. B",
1581 pages = "R13985--R13988",
1585 doi = "10.1103/PhysRevB.57.R13985",
1586 publisher = "American Physical Society",
1587 notes = "parallel replica method, accelerated md",
1591 author = "Xiongwu Wu and Shaomeng Wang",
1593 title = "Enhancing systematic motion in molecular dynamics
1597 journal = "The Journal of Chemical Physics",
1600 pages = "9401--9410",
1601 keywords = "molecular dynamics method; argon; Lennard-Jones
1602 potential; crystallisation; liquid theory",
1603 URL = "http://link.aip.org/link/?JCP/110/9401/1",
1604 doi = "10.1063/1.478948",
1605 notes = "self guided md, sgmd, accelerated md, enhancing
1609 @Article{choudhary05,
1610 author = "Devashish Choudhary and Paulette Clancy",
1612 title = "Application of accelerated molecular dynamics schemes
1613 to the production of amorphous silicon",
1616 journal = "The Journal of Chemical Physics",
1622 keywords = "molecular dynamics method; silicon; glass structure;
1623 amorphous semiconductors",
1624 URL = "http://link.aip.org/link/?JCP/122/154509/1",
1625 doi = "10.1063/1.1878733",
1626 notes = "explanation of sgmd and hyper md, applied to amorphous
1631 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
1633 title = "Carbon precipitation in silicon: Why is it so
1637 journal = "Applied Physics Letters",
1640 pages = "3336--3338",
1641 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
1642 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
1644 URL = "http://link.aip.org/link/?APL/62/3336/1",
1645 doi = "10.1063/1.109063",
1646 notes = "interfacial energy of cubic sic and si",
1649 @Article{chaussende08,
1650 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
1651 journal = "Journal of Crystal Growth",
1656 note = "Proceedings of the E-MRS Conference, Symposium G -
1657 Substrates of Wide Bandgap Materials",
1659 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
1660 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
1661 author = "D. Chaussende and F. Mercier and A. Boulle and F.
1662 Conchon and M. Soueidan and G. Ferro and A. Mantzari
1663 and A. Andreadou and E. K. Polychroniadis and C.
1664 Balloud and S. Juillaguet and J. Camassel and M. Pons",
1665 notes = "3c-sic crystal growth, sic fabrication + links,