2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "The role of thermostats in modeling vapor phase
29 condensation of silicon nanoparticles",
30 journal = "Applied Surface Science",
35 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
37 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
38 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
39 author = "Paul Erhart and Karsten Albe",
43 title = "Modeling the metal-semiconductor interaction:
44 Analytical bond-order potential for platinum-carbon",
45 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
46 journal = "Phys. Rev. B",
53 doi = "10.1103/PhysRevB.65.195124",
54 publisher = "American Physical Society",
55 notes = "derivation of albe bond order formalism",
59 title = "Vibrational absorption of carbon in silicon",
60 journal = "Journal of Physics and Chemistry of Solids",
67 doi = "DOI: 10.1016/0022-3697(65)90166-6",
68 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
69 author = "R. C. Newman and J. B. Willis",
70 notes = "c impurity dissolved as substitutional c in si",
74 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
77 title = "Effect of Carbon on the Lattice Parameter of Silicon",
80 journal = "Journal of Applied Physics",
84 URL = "http://link.aip.org/link/?JAP/39/4365/1",
85 doi = "10.1063/1.1656977",
86 notes = "lattice contraction due to subst c",
90 title = "The solubility of carbon in pulled silicon crystals",
91 journal = "Journal of Physics and Chemistry of Solids",
98 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
100 author = "A. R. Bean and R. C. Newman",
101 notes = "experimental solubility data of carbon in silicon",
105 author = "M. A. Capano and R. J. Trew",
106 title = "Silicon Carbide Electronic Materials and Devices",
107 journal = "MRS Bull.",
114 author = "G. R. Fisher and P. Barnes",
115 title = "Towards a unified view of polytypism in silicon
117 journal = "Philos. Mag. B",
121 notes = "sic polytypes",
125 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
126 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
127 Serre and A. Perez-Rodriguez",
128 title = "Synthesis of nano-sized Si{C} precipitates in Si by
129 simultaneous dual-beam implantation of {C}+ and Si+
131 journal = "Appl. Phys. A: Mater. Sci. Process.",
136 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
137 notes = "dual implantation, sic prec enhanced by vacancies,
138 precipitation by interstitial and substitutional
139 carbon, both mechanisms explained + refs",
143 title = "Carbon-mediated effects in silicon and in
144 silicon-related materials",
145 journal = "Materials Chemistry and Physics",
152 doi = "DOI: 10.1016/0254-0584(95)01673-I",
153 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
154 author = "W. Skorupa and R. A. Yankov",
155 notes = "review of silicon carbon compound",
159 author = "P. S. de Laplace",
160 title = "Th\'eorie analytique des probabilit\'es",
161 series = "Oeuvres Compl\`etes de Laplace",
163 publisher = "Gauthier-Villars",
167 @Article{mattoni2007,
168 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
169 title = "{Atomistic modeling of brittleness in covalent
171 journal = "Phys. Rev. B",
177 doi = "10.1103/PhysRevB.76.224103",
178 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
179 longe(r)-range-interactions, brittle propagation of
180 fracture, more available potentials, universal energy
181 relation (uer), minimum range model (mrm)",
185 title = "Comparative study of silicon empirical interatomic
187 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
188 journal = "Phys. Rev. B",
191 pages = "2250--2279",
195 doi = "10.1103/PhysRevB.46.2250",
196 publisher = "American Physical Society",
197 notes = "comparison of classical potentials for si",
201 title = "Stress relaxation in $a-Si$ induced by ion
203 author = "H. M. Urbassek M. Koster",
204 journal = "Phys. Rev. B",
207 pages = "11219--11224",
211 doi = "10.1103/PhysRevB.62.11219",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
216 @Article{breadmore99,
217 title = "Direct simulation of ion-beam-induced stressing and
218 amorphization of silicon",
219 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
220 journal = "Phys. Rev. B",
223 pages = "12610--12616",
227 doi = "10.1103/PhysRevB.60.12610",
228 publisher = "American Physical Society",
229 notes = "virial derivation for 3-body tersoff potential",
233 title = "First-Principles Calculation of Stress",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. Lett.",
242 doi = "10.1103/PhysRevLett.50.697",
243 publisher = "American Physical Society",
244 notes = "generalization of virial theorem",
248 title = "Quantum-mechanical theory of stress and force",
249 author = "O. H. Nielsen and Richard M. Martin",
250 journal = "Phys. Rev. B",
253 pages = "3780--3791",
257 doi = "10.1103/PhysRevB.32.3780",
258 publisher = "American Physical Society",
259 notes = "dft virial stress and forces",
263 author = "Henri Moissan",
264 title = "Nouvelles recherches sur la météorité de Cañon
266 journal = "Comptes rendus de l'Académie des Sciences",
273 author = "Y. S. Park",
274 title = "Si{C} Materials and Devices",
275 publisher = "Academic Press",
276 address = "San Diego",
281 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
282 Calvin H. Carter Jr. and D. Asbury",
283 title = "Si{C} Seeded Boule Growth",
284 journal = "Materials Science Forum",
288 notes = "modified lely process, micropipes",
292 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
293 Thermodynamical Properties of Lennard-Jones Molecules",
294 author = "Loup Verlet",
295 journal = "Phys. Rev.",
301 doi = "10.1103/PhysRev.159.98",
302 publisher = "American Physical Society",
303 notes = "velocity verlet integration algorithm equation of
307 @Article{berendsen84,
308 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
309 Gunsteren and A. DiNola and J. R. Haak",
311 title = "Molecular dynamics with coupling to an external bath",
314 journal = "J. Chem. Phys.",
317 pages = "3684--3690",
318 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
319 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
320 URL = "http://link.aip.org/link/?JCP/81/3684/1",
321 doi = "10.1063/1.448118",
322 notes = "berendsen thermostat barostat",
326 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
328 title = "Molecular dynamics determination of defect energetics
329 in beta -Si{C} using three representative empirical
331 journal = "Modell. Simul. Mater. Sci. Eng.",
335 URL = "http://stacks.iop.org/0965-0393/3/615",
336 notes = "comparison of tersoff, pearson and eam for defect
337 energetics in sic; (m)eam parameters for sic",
342 title = "Relationship between the embedded-atom method and
344 author = "Donald W. Brenner",
345 journal = "Phys. Rev. Lett.",
352 doi = "10.1103/PhysRevLett.63.1022",
353 publisher = "American Physical Society",
354 notes = "relation of tersoff and eam potential",
358 title = "Molecular-dynamics study of self-interstitials in
360 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
361 journal = "Phys. Rev. B",
364 pages = "9552--9558",
368 doi = "10.1103/PhysRevB.35.9552",
369 publisher = "American Physical Society",
370 notes = "selft-interstitials in silicon, stillinger-weber,
371 calculation of defect formation energy, defect
376 title = "Extended interstitials in silicon and germanium",
377 author = "H. R. Schober",
378 journal = "Phys. Rev. B",
381 pages = "13013--13015",
385 doi = "10.1103/PhysRevB.39.13013",
386 publisher = "American Physical Society",
387 notes = "stillinger-weber silicon 110 stable and metastable
388 dumbbell configuration",
392 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
393 Defect accumulation, topological features, and
395 author = "F. Gao and W. J. Weber",
396 journal = "Phys. Rev. B",
403 doi = "10.1103/PhysRevB.66.024106",
404 publisher = "American Physical Society",
405 notes = "sic intro, si cascade in 3c-sic, amorphization,
406 tersoff modified, pair correlation of amorphous sic, md
410 @Article{devanathan98,
411 title = "Computer simulation of a 10 ke{V} Si displacement
413 journal = "Nucl. Instrum. Methods Phys. Res. B",
419 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
420 author = "R. Devanathan and W. J. Weber and T. Diaz de la
422 notes = "modified tersoff short range potential, ab initio
426 @Article{devanathan98_2,
427 title = "Displacement threshold energies in [beta]-Si{C}",
428 journal = "J. Nucl. Mater.",
434 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
435 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
437 notes = "modified tersoff, ab initio, combined ab initio
441 @Article{kitabatake00,
442 title = "Si{C}/Si heteroepitaxial growth",
443 author = "M. Kitabatake",
444 journal = "Thin Solid Films",
449 notes = "md simulation, sic si heteroepitaxy, mbe",
453 title = "Intrinsic point defects in crystalline silicon:
454 Tight-binding molecular dynamics studies of
455 self-diffusion, interstitial-vacancy recombination, and
457 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
459 journal = "Phys. Rev. B",
462 pages = "14279--14289",
466 doi = "10.1103/PhysRevB.55.14279",
467 publisher = "American Physical Society",
468 notes = "si self interstitial, diffusion, tbmd",
472 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
475 title = "A kinetic Monte--Carlo study of the effective
476 diffusivity of the silicon self-interstitial in the
477 presence of carbon and boron",
480 journal = "J. Appl. Phys.",
483 pages = "1963--1967",
484 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
485 CARBON ADDITIONS; BORON ADDITIONS; elemental
486 semiconductors; self-diffusion",
487 URL = "http://link.aip.org/link/?JAP/84/1963/1",
488 doi = "10.1063/1.368328",
489 notes = "kinetic monte carlo of si self interstitial
494 title = "Barrier to Migration of the Silicon
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. Lett.",
500 pages = "1129--1132",
504 doi = "10.1103/PhysRevLett.52.1129",
505 publisher = "American Physical Society",
506 notes = "si self-interstitial migration barrier",
509 @Article{bar-yam84_2,
510 title = "Electronic structure and total-energy migration
511 barriers of silicon self-interstitials",
512 author = "Y. Bar-Yam and J. D. Joannopoulos",
513 journal = "Phys. Rev. B",
516 pages = "1844--1852",
520 doi = "10.1103/PhysRevB.30.1844",
521 publisher = "American Physical Society",
525 title = "First-principles calculations of self-diffusion
526 constants in silicon",
527 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
528 and D. B. Laks and W. Andreoni and S. T. Pantelides",
529 journal = "Phys. Rev. Lett.",
532 pages = "2435--2438",
536 doi = "10.1103/PhysRevLett.70.2435",
537 publisher = "American Physical Society",
538 notes = "si self int diffusion by ab initio md, formation
539 entropy calculations",
543 title = "Tight-binding theory of native point defects in
545 author = "L. Colombo",
546 journal = "Annu. Rev. Mater. Res.",
551 doi = "10.1146/annurev.matsci.32.111601.103036",
552 publisher = "Annual Reviews",
553 notes = "si self interstitial, tbmd, virial stress",
556 @Article{al-mushadani03,
557 title = "Free-energy calculations of intrinsic point defects in
559 author = "O. K. Al-Mushadani and R. J. Needs",
560 journal = "Phys. Rev. B",
567 doi = "10.1103/PhysRevB.68.235205",
568 publisher = "American Physical Society",
569 notes = "formation energies of intrinisc point defects in
570 silicon, si self interstitials, free energy",
573 @Article{goedecker02,
574 title = "A Fourfold Coordinated Point Defect in Silicon",
575 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
576 journal = "Phys. Rev. Lett.",
583 doi = "10.1103/PhysRevLett.88.235501",
584 publisher = "American Physical Society",
585 notes = "first time ffcd, fourfold coordinated point defect in
590 title = "Ab initio molecular dynamics simulation of
591 self-interstitial diffusion in silicon",
592 author = "Beat Sahli and Wolfgang Fichtner",
593 journal = "Phys. Rev. B",
600 doi = "10.1103/PhysRevB.72.245210",
601 publisher = "American Physical Society",
602 notes = "si self int, diffusion, barrier height, voronoi
607 title = "Ab initio calculations of the interaction between
608 native point defects in silicon",
609 journal = "Mater. Sci. Eng., B",
614 note = "EMRS 2005, Symposium D - Materials Science and Device
615 Issues for Future Technologies",
617 doi = "DOI: 10.1016/j.mseb.2005.08.072",
618 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
619 author = "G. Hobler and G. Kresse",
620 notes = "vasp intrinsic si defect interaction study, capture
625 title = "Ab initio study of self-diffusion in silicon over a
626 wide temperature range: Point defect states and
627 migration mechanisms",
628 author = "Shangyi Ma and Shaoqing Wang",
629 journal = "Phys. Rev. B",
636 doi = "10.1103/PhysRevB.81.193203",
637 publisher = "American Physical Society",
638 notes = "si self interstitial diffusion + refs",
642 title = "Atomistic simulations on the thermal stability of the
643 antisite pair in 3{C}- and 4{H}-Si{C}",
644 author = "M. Posselt and F. Gao and W. J. Weber",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.73.125206",
653 publisher = "American Physical Society",
657 title = "Correlation between self-diffusion in Si and the
658 migration mechanisms of vacancies and
659 self-interstitials: An atomistic study",
660 author = "M. Posselt and F. Gao and H. Bracht",
661 journal = "Phys. Rev. B",
668 doi = "10.1103/PhysRevB.78.035208",
669 publisher = "American Physical Society",
670 notes = "si self-interstitial and vacancy diffusion, stillinger
675 title = "Ab initio and empirical-potential studies of defect
676 properties in $3{C}-Si{C}$",
677 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
679 journal = "Phys. Rev. B",
686 doi = "10.1103/PhysRevB.64.245208",
687 publisher = "American Physical Society",
688 notes = "defects in 3c-sic",
692 title = "Empirical potential approach for defect properties in
694 journal = "Nucl. Instrum. Methods Phys. Res. B",
701 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
702 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
703 author = "Fei Gao and William J. Weber",
704 keywords = "Empirical potential",
705 keywords = "Defect properties",
706 keywords = "Silicon carbide",
707 keywords = "Computer simulation",
708 notes = "sic potential, brenner type, like erhart/albe",
712 title = "Atomistic study of intrinsic defect migration in
714 author = "Fei Gao and William J. Weber and M. Posselt and V.
716 journal = "Phys. Rev. B",
723 doi = "10.1103/PhysRevB.69.245205",
724 publisher = "American Physical Society",
725 notes = "defect migration in sic",
729 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
732 title = "Ab Initio atomic simulations of antisite pair recovery
733 in cubic silicon carbide",
736 journal = "Appl. Phys. Lett.",
742 keywords = "ab initio calculations; silicon compounds; antisite
743 defects; wide band gap semiconductors; molecular
744 dynamics method; density functional theory;
745 electron-hole recombination; photoluminescence;
746 impurities; diffusion",
747 URL = "http://link.aip.org/link/?APL/90/221915/1",
748 doi = "10.1063/1.2743751",
751 @Article{mattoni2002,
752 title = "Self-interstitial trapping by carbon complexes in
753 crystalline silicon",
754 author = "A. Mattoni and F. Bernardini and L. Colombo",
755 journal = "Phys. Rev. B",
762 doi = "10.1103/PhysRevB.66.195214",
763 publisher = "American Physical Society",
764 notes = "c in c-si, diffusion, interstitial configuration +
765 links, interaction of carbon and silicon interstitials,
766 tersoff suitability",
770 title = "Calculations of Silicon Self-Interstitial Defects",
771 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
773 journal = "Phys. Rev. Lett.",
776 pages = "2351--2354",
780 doi = "10.1103/PhysRevLett.83.2351",
781 publisher = "American Physical Society",
782 notes = "nice images of the defects, si defect overview +
787 title = "Identification of the migration path of interstitial
789 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
790 journal = "Phys. Rev. B",
793 pages = "7439--7442",
797 doi = "10.1103/PhysRevB.50.7439",
798 publisher = "American Physical Society",
799 notes = "carbon interstitial migration path shown, 001 c-si
804 title = "Theory of carbon-carbon pairs in silicon",
805 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
806 journal = "Phys. Rev. B",
809 pages = "9845--9850",
813 doi = "10.1103/PhysRevB.58.9845",
814 publisher = "American Physical Society",
815 notes = "c_i c_s pair configuration, theoretical results",
819 title = "Bistable interstitial-carbon--substitutional-carbon
821 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
823 journal = "Phys. Rev. B",
826 pages = "5765--5783",
830 doi = "10.1103/PhysRevB.42.5765",
831 publisher = "American Physical Society",
832 notes = "c_i c_s pair configuration, experimental results",
836 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
837 Shifeng Lu and Xiang-Yang Liu",
839 title = "Ab initio modeling and experimental study of {C}--{B}
843 journal = "Appl. Phys. Lett.",
847 keywords = "silicon; boron; carbon; elemental semiconductors;
848 impurity-defect interactions; ab initio calculations;
849 secondary ion mass spectra; diffusion; interstitials",
850 URL = "http://link.aip.org/link/?APL/80/52/1",
851 doi = "10.1063/1.1430505",
852 notes = "c-c 100 split, lower as a and b states of capaz",
856 title = "Ab initio investigation of carbon-related defects in
858 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
860 journal = "Phys. Rev. B",
863 pages = "12554--12557",
867 doi = "10.1103/PhysRevB.47.12554",
868 publisher = "American Physical Society",
869 notes = "c interstitials in crystalline silicon",
873 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
875 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
876 Sokrates T. Pantelides",
877 journal = "Phys. Rev. Lett.",
880 pages = "1814--1817",
884 doi = "10.1103/PhysRevLett.52.1814",
885 publisher = "American Physical Society",
886 notes = "microscopic theory diffusion silicon dft migration
891 title = "Unified Approach for Molecular Dynamics and
892 Density-Functional Theory",
893 author = "R. Car and M. Parrinello",
894 journal = "Phys. Rev. Lett.",
897 pages = "2471--2474",
901 doi = "10.1103/PhysRevLett.55.2471",
902 publisher = "American Physical Society",
903 notes = "car parrinello method, dft and md",
907 title = "Short-range order, bulk moduli, and physical trends in
908 c-$Si1-x$$Cx$ alloys",
909 author = "P. C. Kelires",
910 journal = "Phys. Rev. B",
913 pages = "8784--8787",
917 doi = "10.1103/PhysRevB.55.8784",
918 publisher = "American Physical Society",
919 notes = "c strained si, montecarlo md, bulk moduli, next
924 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
925 Application to the $Si1-x-yGexCy$ System",
926 author = "P. C. Kelires",
927 journal = "Phys. Rev. Lett.",
930 pages = "1114--1117",
934 doi = "10.1103/PhysRevLett.75.1114",
935 publisher = "American Physical Society",
936 notes = "mc md, strain compensation in si ge by c insertion",
940 title = "Low temperature electron irradiation of silicon
942 journal = "Solid State Communications",
949 doi = "DOI: 10.1016/0038-1098(70)90074-8",
950 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
951 author = "A. R. Bean and R. C. Newman",
955 author = "F. Durand and J. Duby",
956 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
957 title = "Carbon solubility in solid and liquid silicon—{A}
958 review with reference to eutectic equilibrium",
959 journal = "Journal of Phase Equilibria",
960 publisher = "Springer New York",
962 keyword = "Chemistry and Materials Science",
966 URL = "http://dx.doi.org/10.1361/105497199770335956",
967 note = "10.1361/105497199770335956",
969 notes = "better c solubility limit in silicon",
973 title = "{EPR} Observation of the Isolated Interstitial Carbon
975 author = "G. D. Watkins and K. L. Brower",
976 journal = "Phys. Rev. Lett.",
979 pages = "1329--1332",
983 doi = "10.1103/PhysRevLett.36.1329",
984 publisher = "American Physical Society",
985 notes = "epr observations of 100 interstitial carbon atom in
990 title = "{EPR} identification of the single-acceptor state of
991 interstitial carbon in silicon",
992 author = "L. W. Song and G. D. Watkins",
993 journal = "Phys. Rev. B",
996 pages = "5759--5764",
1000 doi = "10.1103/PhysRevB.42.5759",
1001 publisher = "American Physical Society",
1002 notes = "carbon diffusion in silicon",
1006 author = "A K Tipping and R C Newman",
1007 title = "The diffusion coefficient of interstitial carbon in
1009 journal = "Semicond. Sci. Technol.",
1013 URL = "http://stacks.iop.org/0268-1242/2/315",
1015 notes = "diffusion coefficient of carbon interstitials in
1020 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1023 title = "Annealing behavior of Me{V} implanted carbon in
1027 journal = "Journal of Applied Physics",
1030 pages = "3815--3820",
1031 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1032 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1034 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1035 doi = "10.1063/1.354474",
1036 notes = "c at interstitial location for rt implantation in si",
1040 title = "Carbon incorporation into Si at high concentrations by
1041 ion implantation and solid phase epitaxy",
1042 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1043 Picraux and J. K. Watanabe and J. W. Mayer",
1044 journal = "J. Appl. Phys.",
1049 doi = "10.1063/1.360806",
1050 notes = "strained silicon, carbon supersaturation",
1053 @Article{laveant2002,
1054 title = "Epitaxy of carbon-rich silicon with {MBE}",
1055 journal = "Mater. Sci. Eng., B",
1061 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1062 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1063 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1065 notes = "low c in si, tensile stress to compensate compressive
1066 stress, avoid sic precipitation",
1070 title = "The formation of swirl defects in silicon by
1071 agglomeration of self-interstitials",
1072 journal = "Journal of Crystal Growth",
1079 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1080 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1081 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1082 notes = "b-swirl: si + c interstitial agglomerates, c-si
1087 title = "Microdefects in silicon and their relation to point
1089 journal = "Journal of Crystal Growth",
1096 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1097 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1098 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1099 notes = "swirl review",
1103 author = "P. Werner and S. Eichler and G. Mariani and R.
1104 K{\"{o}}gler and W. Skorupa",
1105 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1106 silicon by transmission electron microscopy",
1109 journal = "Appl. Phys. Lett.",
1113 keywords = "silicon; ion implantation; carbon; crystal defects;
1114 transmission electron microscopy; annealing; positron
1115 annihilation; secondary ion mass spectroscopy; buried
1116 layers; precipitation",
1117 URL = "http://link.aip.org/link/?APL/70/252/1",
1118 doi = "10.1063/1.118381",
1119 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1123 @InProceedings{werner96,
1124 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1126 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1127 International Conference on",
1128 title = "{TEM} investigation of {C}-Si defects in carbon
1135 doi = "10.1109/IIT.1996.586497",
1137 notes = "c-si agglomerates dumbbells",
1141 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1144 title = "Carbon diffusion in silicon",
1147 journal = "Appl. Phys. Lett.",
1150 pages = "2465--2467",
1151 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1152 secondary ion mass spectra; semiconductor epitaxial
1153 layers; annealing; impurity-defect interactions;
1154 impurity distribution",
1155 URL = "http://link.aip.org/link/?APL/73/2465/1",
1156 doi = "10.1063/1.122483",
1157 notes = "c diffusion in si, kick out mechnism",
1161 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1163 title = "Self-interstitial enhanced carbon diffusion in
1167 journal = "Applied Physics Letters",
1171 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1172 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1173 TEMPERATURE; IMPURITIES",
1174 URL = "http://link.aip.org/link/?APL/45/268/1",
1175 doi = "10.1063/1.95167",
1176 notes = "c diffusion due to si self-interstitials",
1180 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1183 title = "Characterization of SiGe/Si heterostructures formed by
1184 Ge[sup + ] and {C}[sup + ] implantation",
1187 journal = "Applied Physics Letters",
1190 pages = "2345--2347",
1191 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1192 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1193 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1194 EPITAXY; CARBON IONS; GERMANIUM IONS",
1195 URL = "http://link.aip.org/link/?APL/57/2345/1",
1196 doi = "10.1063/1.103888",
1200 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1201 Doyle and S. T. Picraux and J. W. Mayer",
1203 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1206 journal = "Applied Physics Letters",
1209 pages = "2786--2788",
1210 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1211 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1212 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1213 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1214 EPITAXY; AMORPHIZATION",
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1216 doi = "10.1063/1.110334",
1220 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1221 Legoues and J. Angilello and F. Cardone",
1223 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1224 strained layer superlattices",
1227 journal = "Applied Physics Letters",
1230 pages = "2758--2760",
1231 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1232 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1233 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1234 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1235 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1236 URL = "http://link.aip.org/link/?APL/60/2758/1",
1237 doi = "10.1063/1.106868",
1241 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1242 Picraux and J. K. Watanabe and J. W. Mayer",
1244 title = "Precipitation and relaxation in strained Si[sub 1 -
1245 y]{C}[sub y]/Si heterostructures",
1248 journal = "J. Appl. Phys.",
1251 pages = "3656--3668",
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1253 URL = "http://link.aip.org/link/?JAP/76/3656/1",
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1255 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1256 precipitation by substitutional carbon, coherent prec,
1257 coherent to incoherent transition strain vs interface
1262 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1265 title = "Investigation of the high temperature behavior of
1266 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1269 journal = "J. Appl. Phys.",
1272 pages = "1934--1937",
1273 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1274 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
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1276 TEMPERATURE RANGE 04001000 K",
1277 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1278 doi = "10.1063/1.358826",
1282 title = "Prospects for device implementation of wide band gap
1284 author = "J. H. Edgar",
1285 journal = "J. Mater. Res.",
1290 doi = "10.1557/JMR.1992.0235",
1291 notes = "properties wide band gap semiconductor, sic
1295 @Article{zirkelbach2007,
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1334 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
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1356 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1357 Silicon Materials Research for Electronic and
1358 Photovoltaic Applications",
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1365 keywords = "Carbon",
1366 keywords = "Silicon carbide",
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1369 keywords = "Molecular dynamics simulations",
1372 @Article{zirkelbach10,
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1374 classical potentials and first-principles methods",
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1376 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1412 author = "J. K. N. Lindner and A. Frohnwieser and B.
1413 Rauschenbach and B. Stritzker",
1414 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1416 journal = "MRS Online Proceedings Library",
1421 doi = "10.1557/PROC-354-171",
1422 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1423 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1424 notes = "first time ibs at moderate temperatures",
1428 title = "Formation of buried epitaxial silicon carbide layers
1429 in silicon by ion beam synthesis",
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1439 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1440 Götz and A. Frohnwieser and B. Rauschenbach and B.
1442 notes = "dose window",
1445 @Article{calcagno96,
1446 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1448 journal = "Nuclear Instruments and Methods in Physics Research
1449 Section B: Beam Interactions with Materials and Atoms",
1454 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1455 New Trends in Ion Beam Processing of Materials",
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1458 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1459 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1460 Grimaldi and P. Musumeci",
1461 notes = "dose window, graphitic bonds",
1465 title = "Mechanisms of Si{C} Formation in the Ion Beam
1466 Synthesis of 3{C}-Si{C} Layers in Silicon",
1467 journal = "Materials Science Forum",
1472 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1473 URL = "http://www.scientific.net/MSF.264-268.215",
1474 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1475 notes = "intermediate temperature for sharp interface + good
1480 title = "Controlling the density distribution of Si{C}
1481 nanocrystals for the ion beam synthesis of buried Si{C}
1483 journal = "Nucl. Instrum. Methods Phys. Res. B",
1490 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1491 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1492 author = "J. K. N. Lindner and B. Stritzker",
1493 notes = "two-step implantation process",
1496 @Article{lindner99_2,
1497 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1499 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1506 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1507 author = "J. K. N. Lindner and B. Stritzker",
1508 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1512 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1513 Basic physical processes",
1514 journal = "Nucl. Instrum. Methods Phys. Res. B",
1521 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1522 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1523 author = "J{\"{o}}rg K. N. Lindner",
1527 title = "High-dose carbon implantations into silicon:
1528 fundamental studies for new technological tricks",
1529 author = "J. K. N. Lindner",
1530 journal = "Appl. Phys. A",
1534 doi = "10.1007/s00339-002-2062-8",
1535 notes = "ibs, burried sic layers",
1539 title = "On the balance between ion beam induced nanoparticle
1540 formation and displacive precipitate resolution in the
1542 journal = "Mater. Sci. Eng., C",
1547 note = "Current Trends in Nanoscience - from Materials to
1550 doi = "DOI: 10.1016/j.msec.2005.09.099",
1551 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1552 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1554 notes = "c int diffusion barrier",
1558 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1559 application in buffer layer for Ga{N} epitaxial
1561 journal = "Applied Surface Science",
1566 note = "APHYS'03 Special Issue",
1568 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1569 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1570 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1571 and S. Nishio and K. Yasuda and Y. Ishigami",
1572 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1575 @Article{yamamoto04,
1576 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1577 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1578 implantation into Si(1 1 1) substrate",
1579 journal = "Journal of Crystal Growth",
1584 note = "Proceedings of the 11th Biennial (US) Workshop on
1585 Organometallic Vapor Phase Epitaxy (OMVPE)",
1587 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1588 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1589 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1590 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1591 notes = "gan on 3c-sic",
1595 title = "Substrates for gallium nitride epitaxy",
1596 journal = "Materials Science and Engineering: R: Reports",
1603 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1604 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1605 author = "L. Liu and J. H. Edgar",
1606 notes = "gan substrates",
1609 @Article{takeuchi91,
1610 title = "Growth of single crystalline Ga{N} film on Si
1611 substrate using 3{C}-Si{C} as an intermediate layer",
1612 journal = "Journal of Crystal Growth",
1619 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1620 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1621 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1622 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1623 notes = "gan on 3c-sic (first time?)",
1627 author = "B. J. Alder and T. E. Wainwright",
1628 title = "Phase Transition for a Hard Sphere System",
1631 journal = "J. Chem. Phys.",
1634 pages = "1208--1209",
1635 URL = "http://link.aip.org/link/?JCP/27/1208/1",
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1640 author = "B. J. Alder and T. E. Wainwright",
1641 title = "Studies in Molecular Dynamics. {I}. General Method",
1644 journal = "J. Chem. Phys.",
1648 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1652 @Article{horsfield96,
1653 title = "Bond-order potentials: Theory and implementation",
1654 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1655 D. G. Pettifor and M. Aoki",
1656 journal = "Phys. Rev. B",
1659 pages = "12694--12712",
1663 doi = "10.1103/PhysRevB.53.12694",
1664 publisher = "American Physical Society",
1668 title = "Empirical chemical pseudopotential theory of molecular
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1670 author = "G. C. Abell",
1671 journal = "Phys. Rev. B",
1674 pages = "6184--6196",
1678 doi = "10.1103/PhysRevB.31.6184",
1679 publisher = "American Physical Society",
1682 @Article{tersoff_si1,
1683 title = "New empirical model for the structural properties of
1685 author = "J. Tersoff",
1686 journal = "Phys. Rev. Lett.",
1693 doi = "10.1103/PhysRevLett.56.632",
1694 publisher = "American Physical Society",
1698 title = "Development of a many-body Tersoff-type potential for
1700 author = "Brian W. Dodson",
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1713 title = "New empirical approach for the structure and energy of
1715 author = "J. Tersoff",
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1727 @Article{tersoff_si3,
1728 title = "Empirical interatomic potential for silicon with
1729 improved elastic properties",
1730 author = "J. Tersoff",
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1734 pages = "9902--9905",
1738 doi = "10.1103/PhysRevB.38.9902",
1739 publisher = "American Physical Society",
1743 title = "Empirical Interatomic Potential for Carbon, with
1744 Applications to Amorphous Carbon",
1745 author = "J. Tersoff",
1746 journal = "Phys. Rev. Lett.",
1749 pages = "2879--2882",
1753 doi = "10.1103/PhysRevLett.61.2879",
1754 publisher = "American Physical Society",
1758 title = "Modeling solid-state chemistry: Interatomic potentials
1759 for multicomponent systems",
1760 author = "J. Tersoff",
1761 journal = "Phys. Rev. B",
1764 pages = "5566--5568",
1768 doi = "10.1103/PhysRevB.39.5566",
1769 publisher = "American Physical Society",
1773 title = "Carbon defects and defect reactions in silicon",
1774 author = "J. Tersoff",
1775 journal = "Phys. Rev. Lett.",
1778 pages = "1757--1760",
1782 doi = "10.1103/PhysRevLett.64.1757",
1783 publisher = "American Physical Society",
1787 title = "Point defects and dopant diffusion in silicon",
1788 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1789 journal = "Rev. Mod. Phys.",
1796 doi = "10.1103/RevModPhys.61.289",
1797 publisher = "American Physical Society",
1801 title = "Silicon carbide: synthesis and processing",
1802 journal = "Nucl. Instrum. Methods Phys. Res. B",
1807 note = "Radiation Effects in Insulators",
1809 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1815 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1816 Palmour and J. A. Edmond",
1817 journal = "Proceedings of the IEEE",
1818 title = "Thin film deposition and microelectronic and
1819 optoelectronic device fabrication and characterization
1820 in monocrystalline alpha and beta silicon carbide",
1826 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1827 diode;SiC;dry etching;electrical
1828 contacts;etching;impurity incorporation;optoelectronic
1829 device fabrication;solid-state devices;surface
1830 chemistry;Schottky effect;Schottky gate field effect
1831 transistors;Schottky-barrier
1832 diodes;etching;heterojunction bipolar
1833 transistors;insulated gate field effect
1834 transistors;light emitting diodes;semiconductor
1835 materials;semiconductor thin films;silicon compounds;",
1836 doi = "10.1109/5.90132",
1838 notes = "sic growth methods",
1842 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1843 Lin and B. Sverdlov and M. Burns",
1845 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1846 ZnSe-based semiconductor device technologies",
1849 journal = "J. Appl. Phys.",
1852 pages = "1363--1398",
1853 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1854 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1855 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1857 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1858 doi = "10.1063/1.358463",
1859 notes = "sic intro, properties",
1863 author = "Noch Unbekannt",
1864 title = "How to find references",
1865 journal = "Journal of Applied References",
1872 title = "Atomistic simulation of thermomechanical properties of
1874 author = "Meijie Tang and Sidney Yip",
1875 journal = "Phys. Rev. B",
1878 pages = "15150--15159",
1881 doi = "10.1103/PhysRevB.52.15150",
1882 notes = "modified tersoff, scale cutoff with volume, promising
1883 tersoff reparametrization",
1884 publisher = "American Physical Society",
1888 title = "Silicon carbide as a new {MEMS} technology",
1889 journal = "Sensors and Actuators A: Physical",
1895 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1896 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1897 author = "Pasqualina M. Sarro",
1899 keywords = "Silicon carbide",
1900 keywords = "Micromachining",
1901 keywords = "Mechanical stress",
1905 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1906 semiconductor for high-temperature applications: {A}
1908 journal = "Solid-State Electronics",
1911 pages = "1409--1422",
1914 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1915 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1916 author = "J. B. Casady and R. W. Johnson",
1917 notes = "sic intro",
1920 @Article{giancarli98,
1921 title = "Design requirements for Si{C}/Si{C} composites
1922 structural material in fusion power reactor blankets",
1923 journal = "Fusion Engineering and Design",
1929 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1930 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1931 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1932 Marois and N. B. Morley and J. F. Salavy",
1936 title = "Electrical and optical characterization of Si{C}",
1937 journal = "Physica B: Condensed Matter",
1943 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1944 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1945 author = "G. Pensl and W. J. Choyke",
1949 title = "Investigation of growth processes of ingots of silicon
1950 carbide single crystals",
1951 journal = "J. Cryst. Growth",
1956 notes = "modified lely process",
1958 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1959 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1960 author = "Yu. M. Tairov and V. F. Tsvetkov",
1964 title = "General principles of growing large-size single
1965 crystals of various silicon carbide polytypes",
1966 journal = "Journal of Crystal Growth",
1973 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1974 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1975 author = "Yu.M. Tairov and V. F. Tsvetkov",
1979 title = "Si{C} boule growth by sublimation vapor transport",
1980 journal = "Journal of Crystal Growth",
1987 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1988 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1989 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1990 R. H. Hopkins and W. J. Choyke",
1994 title = "Growth of large Si{C} single crystals",
1995 journal = "Journal of Crystal Growth",
2002 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2003 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2004 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2005 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2010 title = "Control of polytype formation by surface energy
2011 effects during the growth of Si{C} monocrystals by the
2012 sublimation method",
2013 journal = "Journal of Crystal Growth",
2020 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2021 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2022 author = "R. A. Stein and P. Lanig",
2023 notes = "6h and 4h, sublimation technique",
2027 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2030 title = "Production of large-area single-crystal wafers of
2031 cubic Si{C} for semiconductor devices",
2034 journal = "Appl. Phys. Lett.",
2038 keywords = "silicon carbides; layers; chemical vapor deposition;
2040 URL = "http://link.aip.org/link/?APL/42/460/1",
2041 doi = "10.1063/1.93970",
2042 notes = "cvd of 3c-sic on si, sic buffer layer",
2046 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2047 and Hiroyuki Matsunami",
2049 title = "Epitaxial growth and electric characteristics of cubic
2053 journal = "J. Appl. Phys.",
2056 pages = "4889--4893",
2057 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2058 doi = "10.1063/1.338355",
2059 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2064 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2066 title = "Growth and Characterization of Cubic Si{C}
2067 Single-Crystal Films on Si",
2070 journal = "Journal of The Electrochemical Society",
2073 pages = "1558--1565",
2074 keywords = "semiconductor materials; silicon compounds; carbon
2075 compounds; crystal morphology; electron mobility",
2076 URL = "http://link.aip.org/link/?JES/134/1558/1",
2077 doi = "10.1149/1.2100708",
2078 notes = "blue light emitting diodes (led)",
2081 @Article{powell87_2,
2082 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2083 C. M. Chorey and T. T. Cheng and P. Pirouz",
2085 title = "Improved beta-Si{C} heteroepitaxial films using
2086 off-axis Si substrates",
2089 journal = "Applied Physics Letters",
2093 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2094 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2095 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2096 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2097 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2098 URL = "http://link.aip.org/link/?APL/51/823/1",
2099 doi = "10.1063/1.98824",
2100 notes = "improved sic on off-axis si substrates, reduced apbs",
2104 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2105 journal = "Journal of Crystal Growth",
2112 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2113 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2114 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2116 notes = "step-controlled epitaxy model",
2120 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2121 and Hiroyuki Matsunami",
2122 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2126 journal = "J. Appl. Phys.",
2130 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2131 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2133 URL = "http://link.aip.org/link/?JAP/73/726/1",
2134 doi = "10.1063/1.353329",
2135 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2138 @Article{powell90_2,
2139 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2140 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2141 Yoganathan and J. Yang and P. Pirouz",
2143 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2144 vicinal (0001) 6{H}-Si{C} wafers",
2147 journal = "Applied Physics Letters",
2150 pages = "1442--1444",
2151 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2152 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2153 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2154 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2155 URL = "http://link.aip.org/link/?APL/56/1442/1",
2156 doi = "10.1063/1.102492",
2157 notes = "cvd of 6h-sic on 6h-sic",
2161 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2163 title = "Chemical vapor deposition and characterization of
2164 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2168 journal = "Journal of Applied Physics",
2171 pages = "2672--2679",
2172 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2173 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2174 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2175 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2176 PHASE EPITAXY; CRYSTAL ORIENTATION",
2177 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2178 doi = "10.1063/1.341608",
2182 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2183 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2184 Yoganathan and J. Yang and P. Pirouz",
2186 title = "Growth of improved quality 3{C}-Si{C} films on
2187 6{H}-Si{C} substrates",
2190 journal = "Appl. Phys. Lett.",
2193 pages = "1353--1355",
2194 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2195 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2196 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2198 URL = "http://link.aip.org/link/?APL/56/1353/1",
2199 doi = "10.1063/1.102512",
2200 notes = "cvd of 3c-sic on 6h-sic",
2204 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2205 Rozgonyi and K. L. More",
2207 title = "An examination of double positioning boundaries and
2208 interface misfit in beta-Si{C} films on alpha-Si{C}
2212 journal = "Journal of Applied Physics",
2215 pages = "2645--2650",
2216 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2217 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2218 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2219 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2220 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2221 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2222 doi = "10.1063/1.341004",
2226 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2227 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2228 and W. J. Choyke and L. Clemen and M. Yoganathan",
2230 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2231 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2234 journal = "Applied Physics Letters",
2238 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2239 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2240 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2241 URL = "http://link.aip.org/link/?APL/59/333/1",
2242 doi = "10.1063/1.105587",
2246 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2247 Thokala and M. J. Loboda",
2249 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2250 films on 6{H}-Si{C} by chemical vapor deposition from
2254 journal = "J. Appl. Phys.",
2257 pages = "1271--1273",
2258 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2259 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2261 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2262 doi = "10.1063/1.360368",
2263 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2267 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2268 properties of its p-n junction",
2269 journal = "Journal of Crystal Growth",
2276 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2277 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2278 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2280 notes = "first time ssmbe of 3c-sic on 6h-sic",
2284 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2285 [alpha]-Si{C}(0001) at low temperatures by solid-source
2286 molecular beam epitaxy",
2287 journal = "J. Cryst. Growth",
2293 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2294 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2295 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2296 Schr{\"{o}}ter and W. Richter",
2297 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2300 @Article{fissel95_apl,
2301 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2303 title = "Low-temperature growth of Si{C} thin films on Si and
2304 6{H}--Si{C} by solid-source molecular beam epitaxy",
2307 journal = "Appl. Phys. Lett.",
2310 pages = "3182--3184",
2311 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2313 URL = "http://link.aip.org/link/?APL/66/3182/1",
2314 doi = "10.1063/1.113716",
2315 notes = "mbe 3c-sic on si and 6h-sic",
2319 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2320 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2322 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2323 migration enhanced epitaxy controlled to an atomic
2324 level using surface superstructures",
2327 journal = "Applied Physics Letters",
2330 pages = "1204--1206",
2331 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2332 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2334 URL = "http://link.aip.org/link/?APL/68/1204/1",
2335 doi = "10.1063/1.115969",
2336 notes = "ss mbe sic, superstructure, reconstruction",
2340 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2341 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2342 C. M. Bertoni and A. Catellani",
2343 journal = "Phys. Rev. Lett.",
2350 doi = "10.1103/PhysRevLett.91.136101",
2351 publisher = "American Physical Society",
2352 notes = "dft calculations mbe sic growth",
2356 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2358 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2362 journal = "Appl. Phys. Lett.",
2366 URL = "http://link.aip.org/link/?APL/18/509/1",
2367 doi = "10.1063/1.1653516",
2368 notes = "first time sic by ibs, follow cites for precipitation
2373 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2374 and E. V. Lubopytova",
2375 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2376 by ion implantation",
2377 publisher = "Taylor \& Francis",
2379 journal = "Radiation Effects",
2383 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2384 notes = "3c-sic for different temperatures, amorphous, poly,
2385 single crystalline",
2388 @Article{akimchenko80,
2389 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2390 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2391 title = "Structure and optical properties of silicon implanted
2392 by high doses of 70 and 310 ke{V} carbon ions",
2393 publisher = "Taylor \& Francis",
2395 journal = "Radiation Effects",
2399 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2400 notes = "3c-sic nucleation by thermal spikes",
2404 title = "Structure and annealing properties of silicon carbide
2405 thin layers formed by implantation of carbon ions in
2407 journal = "Thin Solid Films",
2414 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2415 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2416 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2421 title = "Characteristics of the synthesis of [beta]-Si{C} by
2422 the implantation of carbon ions into silicon",
2423 journal = "Thin Solid Films",
2430 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2431 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2432 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2437 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2438 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2439 Chater and J. A. Iulner and J. Davis",
2440 title = "Formation mechanisms and structures of insulating
2441 compounds formed in silicon by ion beam synthesis",
2442 publisher = "Taylor \& Francis",
2444 journal = "Radiation Effects",
2448 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2449 notes = "ibs, comparison with sio and sin, higher temp or time,
2450 no c redistribution",
2454 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2455 J. Davis and G. E. Celler",
2457 title = "Formation of buried layers of beta-Si{C} using ion
2458 beam synthesis and incoherent lamp annealing",
2461 journal = "Appl. Phys. Lett.",
2464 pages = "2242--2244",
2465 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2466 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2467 URL = "http://link.aip.org/link/?APL/51/2242/1",
2468 doi = "10.1063/1.98953",
2469 notes = "nice tem images, sic by ibs",
2473 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2474 and M. Olivier and A. M. Papon and G. Rolland",
2476 title = "High-temperature ion beam synthesis of cubic Si{C}",
2479 journal = "Journal of Applied Physics",
2482 pages = "2908--2912",
2483 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2484 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2485 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2486 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2487 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2488 REACTIONS; MONOCRYSTALS",
2489 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2490 doi = "10.1063/1.346092",
2491 notes = "triple energy implantation to overcome high annealing
2496 author = "R. I. Scace and G. A. Slack",
2498 title = "Solubility of Carbon in Silicon and Germanium",
2501 journal = "J. Chem. Phys.",
2504 pages = "1551--1555",
2505 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2506 doi = "10.1063/1.1730236",
2507 notes = "solubility of c in c-si, si-c phase diagram",
2511 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2513 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2514 Laboratories Eindhoven Netherlands Eindhoven
2516 title = "Boron implantations in silicon: {A} comparison of
2517 charge carrier and boron concentration profiles",
2518 journal = "Applied Physics A: Materials Science \& Processing",
2519 publisher = "Springer Berlin / Heidelberg",
2521 keyword = "Physics and Astronomy",
2525 URL = "http://dx.doi.org/10.1007/BF00884267",
2526 note = "10.1007/BF00884267",
2528 notes = "first time ted (only for boron?)",
2532 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2535 title = "Rapid annealing and the anomalous diffusion of ion
2536 implanted boron into silicon",
2539 journal = "Applied Physics Letters",
2543 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2544 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2545 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2546 URL = "http://link.aip.org/link/?APL/50/416/1",
2547 doi = "10.1063/1.98160",
2548 notes = "ted of boron in si",
2552 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2555 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2556 time, and matrix dependence of atomic and electrical
2560 journal = "Journal of Applied Physics",
2563 pages = "6191--6198",
2564 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2565 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2566 CRYSTALS; AMORPHIZATION",
2567 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2568 doi = "10.1063/1.346910",
2569 notes = "ted of boron in si",
2573 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2574 F. W. Saris and W. Vandervorst",
2576 title = "Role of {C} and {B} clusters in transient diffusion of
2580 journal = "Appl. Phys. Lett.",
2583 pages = "1150--1152",
2584 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2585 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2587 URL = "http://link.aip.org/link/?APL/68/1150/1",
2588 doi = "10.1063/1.115706",
2589 notes = "suppression of transient enhanced diffusion (ted)",
2593 title = "Implantation and transient boron diffusion: the role
2594 of the silicon self-interstitial",
2595 journal = "Nucl. Instrum. Methods Phys. Res. B",
2600 note = "Selected Papers of the Tenth International Conference
2601 on Ion Implantation Technology (IIT '94)",
2603 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2604 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2605 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2610 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2611 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2612 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2615 title = "Physical mechanisms of transient enhanced dopant
2616 diffusion in ion-implanted silicon",
2619 journal = "J. Appl. Phys.",
2622 pages = "6031--6050",
2623 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2624 doi = "10.1063/1.364452",
2625 notes = "ted, transient enhanced diffusion, c silicon trap",
2629 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2631 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2632 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2635 journal = "Appl. Phys. Lett.",
2639 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2640 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2641 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2643 URL = "http://link.aip.org/link/?APL/64/324/1",
2644 doi = "10.1063/1.111195",
2645 notes = "beta sic nano crystals in si, mbe, annealing",
2649 author = "Richard A. Soref",
2651 title = "Optical band gap of the ternary semiconductor Si[sub 1
2652 - x - y]Ge[sub x]{C}[sub y]",
2655 journal = "J. Appl. Phys.",
2658 pages = "2470--2472",
2659 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2660 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2662 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2663 doi = "10.1063/1.349403",
2664 notes = "band gap of strained si by c",
2668 author = "E Kasper",
2669 title = "Superlattices of group {IV} elements, a new
2670 possibility to produce direct band gap material",
2671 journal = "Physica Scripta",
2674 URL = "http://stacks.iop.org/1402-4896/T35/232",
2676 notes = "superlattices, convert indirect band gap into a
2681 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2684 title = "Growth and strain compensation effects in the ternary
2685 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2688 journal = "Applied Physics Letters",
2691 pages = "3033--3035",
2692 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2693 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2694 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2695 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2697 URL = "http://link.aip.org/link/?APL/60/3033/1",
2698 doi = "10.1063/1.106774",
2702 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2705 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2709 journal = "J. Vac. Sci. Technol. B",
2712 pages = "1064--1068",
2713 location = "Ottawa (Canada)",
2714 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2715 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2716 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2717 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2718 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2719 doi = "10.1116/1.587008",
2720 notes = "substitutional c in si by mbe",
2723 @Article{powell93_2,
2724 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2725 of the ternary system",
2726 journal = "Journal of Crystal Growth",
2733 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2734 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2735 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2740 author = "H. J. Osten",
2741 title = "Modification of Growth Modes in Lattice-Mismatched
2742 Epitaxial Systems: Si/Ge",
2743 journal = "physica status solidi (a)",
2746 publisher = "WILEY-VCH Verlag",
2748 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2749 doi = "10.1002/pssa.2211450203",
2754 @Article{dietrich94,
2755 title = "Lattice distortion in a strain-compensated
2756 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2757 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2758 Methfessel and P. Zaumseil",
2759 journal = "Phys. Rev. B",
2762 pages = "17185--17190",
2766 doi = "10.1103/PhysRevB.49.17185",
2767 publisher = "American Physical Society",
2771 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2773 title = "Growth of an inverse tetragonal distorted SiGe layer
2774 on Si(001) by adding small amounts of carbon",
2777 journal = "Applied Physics Letters",
2780 pages = "3440--3442",
2781 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2782 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2783 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2785 URL = "http://link.aip.org/link/?APL/64/3440/1",
2786 doi = "10.1063/1.111235",
2787 notes = "inversely strained / distorted heterostructure",
2791 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2792 LeGoues and J. C. Tsang and F. Cardone",
2794 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2795 molecular beam epitaxy",
2798 journal = "Applied Physics Letters",
2802 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2803 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2804 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2805 FILM GROWTH; MICROSTRUCTURE",
2806 URL = "http://link.aip.org/link/?APL/60/356/1",
2807 doi = "10.1063/1.106655",
2811 author = "H. J. Osten and J. Griesche and S. Scalese",
2813 title = "Substitutional carbon incorporation in epitaxial
2814 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2815 molecular beam epitaxy",
2818 journal = "Appl. Phys. Lett.",
2822 keywords = "molecular beam epitaxial growth; semiconductor growth;
2823 wide band gap semiconductors; interstitials; silicon
2825 URL = "http://link.aip.org/link/?APL/74/836/1",
2826 doi = "10.1063/1.123384",
2827 notes = "substitutional c in si by mbe",
2830 @Article{hohenberg64,
2831 title = "Inhomogeneous Electron Gas",
2832 author = "P. Hohenberg and W. Kohn",
2833 journal = "Phys. Rev.",
2836 pages = "B864--B871",
2840 doi = "10.1103/PhysRev.136.B864",
2841 publisher = "American Physical Society",
2842 notes = "density functional theory, dft",
2846 title = "Self-Consistent Equations Including Exchange and
2847 Correlation Effects",
2848 author = "W. Kohn and L. J. Sham",
2849 journal = "Phys. Rev.",
2852 pages = "A1133--A1138",
2856 doi = "10.1103/PhysRev.140.A1133",
2857 publisher = "American Physical Society",
2858 notes = "dft, exchange and correlation",
2862 title = "Strain-stabilized highly concentrated pseudomorphic
2863 $Si1-x$$Cx$ layers in Si",
2864 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2866 journal = "Phys. Rev. Lett.",
2869 pages = "3578--3581",
2873 doi = "10.1103/PhysRevLett.72.3578",
2874 publisher = "American Physical Society",
2875 notes = "high c concentration in si, heterostructure, strained
2880 title = "Phosphorous Doping of Strain-Induced
2881 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2882 by Low-Temperature Chemical Vapor Deposition",
2883 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2884 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2885 journal = "Japanese Journal of Applied Physics",
2887 number = "Part 1, No. 4B",
2888 pages = "2472--2475",
2891 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2892 doi = "10.1143/JJAP.41.2472",
2893 publisher = "The Japan Society of Applied Physics",
2894 notes = "experimental charge carrier mobility in strained si",
2898 title = "Electron Transport Model for Strained Silicon-Carbon
2900 author = "Shu-Tong Chang and Chung-Yi Lin",
2901 journal = "Japanese J. Appl. Phys.",
2904 pages = "2257--2262",
2907 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2908 doi = "10.1143/JJAP.44.2257",
2909 publisher = "The Japan Society of Applied Physics",
2910 notes = "enhance of electron mobility in strained si",
2913 @Article{kissinger94,
2914 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2917 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2918 y] layers on Si(001)",
2921 journal = "Applied Physics Letters",
2924 pages = "3356--3358",
2925 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2926 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2927 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2928 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2929 URL = "http://link.aip.org/link/?APL/65/3356/1",
2930 doi = "10.1063/1.112390",
2931 notes = "strained si influence on optical properties",
2935 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2938 title = "Substitutional versus interstitial carbon
2939 incorporation during pseudomorphic growth of Si[sub 1 -
2940 y]{C}[sub y] on Si(001)",
2943 journal = "Journal of Applied Physics",
2946 pages = "6711--6715",
2947 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2948 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2950 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2951 doi = "10.1063/1.363797",
2952 notes = "mbe substitutional vs interstitial c incorporation",
2956 author = "H. J. Osten and P. Gaworzewski",
2958 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2959 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2963 journal = "J. Appl. Phys.",
2966 pages = "4977--4981",
2967 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2968 semiconductors; semiconductor epitaxial layers; carrier
2969 density; Hall mobility; interstitials; defect states",
2970 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2971 doi = "10.1063/1.366364",
2972 notes = "charge transport in strained si",
2976 title = "Carbon-mediated aggregation of self-interstitials in
2977 silicon: {A} large-scale molecular dynamics study",
2978 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2979 journal = "Phys. Rev. B",
2986 doi = "10.1103/PhysRevB.69.155214",
2987 publisher = "American Physical Society",
2988 notes = "simulation using promising tersoff reparametrization",
2992 title = "Event-Based Relaxation of Continuous Disordered
2994 author = "G. T. Barkema and Normand Mousseau",
2995 journal = "Phys. Rev. Lett.",
2998 pages = "4358--4361",
3002 doi = "10.1103/PhysRevLett.77.4358",
3003 publisher = "American Physical Society",
3004 notes = "activation relaxation technique, art, speed up slow
3009 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3010 Minoukadeh and F. Willaime",
3012 title = "Some improvements of the activation-relaxation
3013 technique method for finding transition pathways on
3014 potential energy surfaces",
3017 journal = "J. Chem. Phys.",
3023 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3024 surfaces; vacancies (crystal)",
3025 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3026 doi = "10.1063/1.3088532",
3027 notes = "improvements to art, refs for methods to find
3028 transition pathways",
3031 @Article{parrinello81,
3032 author = "M. Parrinello and A. Rahman",
3034 title = "Polymorphic transitions in single crystals: {A} new
3035 molecular dynamics method",
3038 journal = "J. Appl. Phys.",
3041 pages = "7182--7190",
3042 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3043 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3044 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3045 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3046 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3048 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3049 doi = "10.1063/1.328693",
3052 @Article{stillinger85,
3053 title = "Computer simulation of local order in condensed phases
3055 author = "Frank H. Stillinger and Thomas A. Weber",
3056 journal = "Phys. Rev. B",
3059 pages = "5262--5271",
3063 doi = "10.1103/PhysRevB.31.5262",
3064 publisher = "American Physical Society",
3068 title = "Empirical potential for hydrocarbons for use in
3069 simulating the chemical vapor deposition of diamond
3071 author = "Donald W. Brenner",
3072 journal = "Phys. Rev. B",
3075 pages = "9458--9471",
3079 doi = "10.1103/PhysRevB.42.9458",
3080 publisher = "American Physical Society",
3081 notes = "brenner hydro carbons",
3085 title = "Modeling of Covalent Bonding in Solids by Inversion of
3086 Cohesive Energy Curves",
3087 author = "Martin Z. Bazant and Efthimios Kaxiras",
3088 journal = "Phys. Rev. Lett.",
3091 pages = "4370--4373",
3095 doi = "10.1103/PhysRevLett.77.4370",
3096 publisher = "American Physical Society",
3097 notes = "first si edip",
3101 title = "Environment-dependent interatomic potential for bulk
3103 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3105 journal = "Phys. Rev. B",
3108 pages = "8542--8552",
3112 doi = "10.1103/PhysRevB.56.8542",
3113 publisher = "American Physical Society",
3114 notes = "second si edip",
3118 title = "Interatomic potential for silicon defects and
3120 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3121 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3122 journal = "Phys. Rev. B",
3125 pages = "2539--2550",
3129 doi = "10.1103/PhysRevB.58.2539",
3130 publisher = "American Physical Society",
3131 notes = "latest si edip, good dislocation explanation",
3135 title = "{PARCAS} molecular dynamics code",
3136 author = "K. Nordlund",
3141 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3143 author = "Arthur F. Voter",
3144 journal = "Phys. Rev. Lett.",
3147 pages = "3908--3911",
3151 doi = "10.1103/PhysRevLett.78.3908",
3152 publisher = "American Physical Society",
3153 notes = "hyperdynamics, accelerated md",
3157 author = "Arthur F. Voter",
3159 title = "A method for accelerating the molecular dynamics
3160 simulation of infrequent events",
3163 journal = "J. Chem. Phys.",
3166 pages = "4665--4677",
3167 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3168 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3169 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3170 energy functions; surface diffusion; reaction kinetics
3171 theory; potential energy surfaces",
3172 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3173 doi = "10.1063/1.473503",
3174 notes = "improved hyperdynamics md",
3177 @Article{sorensen2000,
3178 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3180 title = "Temperature-accelerated dynamics for simulation of
3184 journal = "J. Chem. Phys.",
3187 pages = "9599--9606",
3188 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3189 MOLECULAR DYNAMICS METHOD; surface diffusion",
3190 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3191 doi = "10.1063/1.481576",
3192 notes = "temperature accelerated dynamics, tad",
3196 title = "Parallel replica method for dynamics of infrequent
3198 author = "Arthur F. Voter",
3199 journal = "Phys. Rev. B",
3202 pages = "R13985--R13988",
3206 doi = "10.1103/PhysRevB.57.R13985",
3207 publisher = "American Physical Society",
3208 notes = "parallel replica method, accelerated md",
3212 author = "Xiongwu Wu and Shaomeng Wang",
3214 title = "Enhancing systematic motion in molecular dynamics
3218 journal = "J. Chem. Phys.",
3221 pages = "9401--9410",
3222 keywords = "molecular dynamics method; argon; Lennard-Jones
3223 potential; crystallisation; liquid theory",
3224 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3225 doi = "10.1063/1.478948",
3226 notes = "self guided md, sgmd, accelerated md, enhancing
3230 @Article{choudhary05,
3231 author = "Devashish Choudhary and Paulette Clancy",
3233 title = "Application of accelerated molecular dynamics schemes
3234 to the production of amorphous silicon",
3237 journal = "J. Chem. Phys.",
3243 keywords = "molecular dynamics method; silicon; glass structure;
3244 amorphous semiconductors",
3245 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3246 doi = "10.1063/1.1878733",
3247 notes = "explanation of sgmd and hyper md, applied to amorphous
3252 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3254 title = "Carbon precipitation in silicon: Why is it so
3258 journal = "Appl. Phys. Lett.",
3261 pages = "3336--3338",
3262 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3263 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3265 URL = "http://link.aip.org/link/?APL/62/3336/1",
3266 doi = "10.1063/1.109063",
3267 notes = "interfacial energy of cubic sic and si, si self
3268 interstitials necessary for precipitation, volume
3269 decrease, high interface energy",
3272 @Article{chaussende08,
3273 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3274 journal = "J. Cryst. Growth",
3279 note = "Proceedings of the E-MRS Conference, Symposium G -
3280 Substrates of Wide Bandgap Materials",
3282 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3283 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3284 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3285 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3286 and A. Andreadou and E. K. Polychroniadis and C.
3287 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3288 notes = "3c-sic crystal growth, sic fabrication + links,
3292 @Article{chaussende07,
3293 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3294 title = "Status of Si{C} bulk growth processes",
3295 journal = "Journal of Physics D: Applied Physics",
3299 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3301 notes = "review of sic single crystal growth methods, process
3306 title = "Forces in Molecules",
3307 author = "R. P. Feynman",
3308 journal = "Phys. Rev.",
3315 doi = "10.1103/PhysRev.56.340",
3316 publisher = "American Physical Society",
3317 notes = "hellmann feynman forces",
3321 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3322 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3323 their Contrasting Properties",
3324 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3326 journal = "Phys. Rev. Lett.",
3333 doi = "10.1103/PhysRevLett.84.943",
3334 publisher = "American Physical Society",
3335 notes = "si sio2 and sic sio2 interface",
3338 @Article{djurabekova08,
3339 title = "Atomistic simulation of the interface structure of Si
3340 nanocrystals embedded in amorphous silica",
3341 author = "Flyura Djurabekova and Kai Nordlund",
3342 journal = "Phys. Rev. B",
3349 doi = "10.1103/PhysRevB.77.115325",
3350 publisher = "American Physical Society",
3351 notes = "nc-si in sio2, interface energy, nc construction,
3352 angular distribution, coordination",
3356 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3357 W. Liang and J. Zou",
3359 title = "Nature of interfacial defects and their roles in
3360 strain relaxation at highly lattice mismatched
3361 3{C}-Si{C}/Si (001) interface",
3364 journal = "J. Appl. Phys.",
3370 keywords = "anelastic relaxation; crystal structure; dislocations;
3371 elemental semiconductors; semiconductor growth;
3372 semiconductor thin films; silicon; silicon compounds;
3373 stacking faults; wide band gap semiconductors",
3374 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3375 doi = "10.1063/1.3234380",
3376 notes = "sic/si interface, follow refs, tem image
3377 deconvolution, dislocation defects",
3380 @Article{kitabatake93,
3381 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3384 title = "Simulations and experiments of Si{C} heteroepitaxial
3385 growth on Si(001) surface",
3388 journal = "J. Appl. Phys.",
3391 pages = "4438--4445",
3392 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3393 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3394 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3395 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3396 doi = "10.1063/1.354385",
3397 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3401 @Article{kitabatake97,
3402 author = "Makoto Kitabatake",
3403 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3404 Heteroepitaxial Growth",
3405 publisher = "WILEY-VCH Verlag",
3407 journal = "physica status solidi (b)",
3410 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3411 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3412 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3416 title = "Strain relaxation and thermal stability of the
3417 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3419 journal = "Thin Solid Films",
3426 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3427 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3428 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3429 keywords = "Strain relaxation",
3430 keywords = "Interfaces",
3431 keywords = "Thermal stability",
3432 keywords = "Molecular dynamics",
3433 notes = "tersoff sic/si interface study",
3437 title = "Ab initio Study of Misfit Dislocations at the
3438 $Si{C}/Si(001)$ Interface",
3439 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3441 journal = "Phys. Rev. Lett.",
3448 doi = "10.1103/PhysRevLett.89.156101",
3449 publisher = "American Physical Society",
3450 notes = "sic/si interface study",
3453 @Article{pizzagalli03,
3454 title = "Theoretical investigations of a highly mismatched
3455 interface: Si{C}/Si(001)",
3456 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3458 journal = "Phys. Rev. B",
3465 doi = "10.1103/PhysRevB.68.195302",
3466 publisher = "American Physical Society",
3467 notes = "tersoff md and ab initio sic/si interface study",
3471 title = "Atomic configurations of dislocation core and twin
3472 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3473 electron microscopy",
3474 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3475 H. Zheng and J. W. Liang",
3476 journal = "Phys. Rev. B",
3483 doi = "10.1103/PhysRevB.75.184103",
3484 publisher = "American Physical Society",
3485 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3489 @Article{hornstra58,
3490 title = "Dislocations in the diamond lattice",
3491 journal = "Journal of Physics and Chemistry of Solids",
3498 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3499 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3500 author = "J. Hornstra",
3501 notes = "dislocations in diamond lattice",
3505 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3506 Ion `Hot' Implantation",
3507 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3508 Hirao and Naoki Arai and Tomio Izumi",
3509 journal = "Japanese J. Appl. Phys.",
3511 number = "Part 1, No. 2A",
3515 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3516 doi = "10.1143/JJAP.31.343",
3517 publisher = "The Japan Society of Applied Physics",
3518 notes = "c-c bonds in c implanted si, hot implantation
3519 efficiency, c-c hard to break by thermal annealing",
3522 @Article{eichhorn99,
3523 author = "F. Eichhorn and N. Schell and W. Matz and R.
3526 title = "Strain and Si{C} particle formation in silicon
3527 implanted with carbon ions of medium fluence studied by
3528 synchrotron x-ray diffraction",
3531 journal = "J. Appl. Phys.",
3534 pages = "4184--4187",
3535 keywords = "silicon; carbon; elemental semiconductors; chemical
3536 interdiffusion; ion implantation; X-ray diffraction;
3537 precipitation; semiconductor doping",
3538 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3539 doi = "10.1063/1.371344",
3540 notes = "sic conversion by ibs, detected substitutional carbon,
3541 expansion of si lattice",
3544 @Article{eichhorn02,
3545 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3546 Metzger and W. Matz and R. K{\"{o}}gler",
3548 title = "Structural relation between Si and Si{C} formed by
3549 carbon ion implantation",
3552 journal = "J. Appl. Phys.",
3555 pages = "1287--1292",
3556 keywords = "silicon compounds; wide band gap semiconductors; ion
3557 implantation; annealing; X-ray scattering; transmission
3558 electron microscopy",
3559 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3560 doi = "10.1063/1.1428105",
3561 notes = "3c-sic alignement to si host in ibs depending on
3562 temperature, might explain c into c sub trafo",
3566 author = "G Lucas and M Bertolus and L Pizzagalli",
3567 title = "An environment-dependent interatomic potential for
3568 silicon carbide: calculation of bulk properties,
3569 high-pressure phases, point and extended defects, and
3570 amorphous structures",
3571 journal = "J. Phys.: Condens. Matter",
3575 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3581 author = "J Godet and L Pizzagalli and S Brochard and P
3583 title = "Comparison between classical potentials and ab initio
3584 methods for silicon under large shear",
3585 journal = "J. Phys.: Condens. Matter",
3589 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3591 notes = "comparison of empirical potentials, stillinger weber,
3592 edip, tersoff, ab initio",
3595 @Article{moriguchi98,
3596 title = "Verification of Tersoff's Potential for Static
3597 Structural Analysis of Solids of Group-{IV} Elements",
3598 author = "Koji Moriguchi and Akira Shintani",
3599 journal = "Japanese J. Appl. Phys.",
3601 number = "Part 1, No. 2",
3605 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3606 doi = "10.1143/JJAP.37.414",
3607 publisher = "The Japan Society of Applied Physics",
3608 notes = "tersoff stringent test",
3611 @Article{mazzarolo01,
3612 title = "Low-energy recoils in crystalline silicon: Quantum
3614 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3615 Lulli and Eros Albertazzi",
3616 journal = "Phys. Rev. B",
3623 doi = "10.1103/PhysRevB.63.195207",
3624 publisher = "American Physical Society",
3627 @Article{holmstroem08,
3628 title = "Threshold defect production in silicon determined by
3629 density functional theory molecular dynamics
3631 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3632 journal = "Phys. Rev. B",
3639 doi = "10.1103/PhysRevB.78.045202",
3640 publisher = "American Physical Society",
3641 notes = "threshold displacement comparison empirical and ab
3645 @Article{nordlund97,
3646 title = "Repulsive interatomic potentials calculated using
3647 Hartree-Fock and density-functional theory methods",
3648 journal = "Nucl. Instrum. Methods Phys. Res. B",
3655 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3656 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3657 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3658 notes = "repulsive ab initio potential",
3662 title = "Efficiency of ab-initio total energy calculations for
3663 metals and semiconductors using a plane-wave basis
3665 journal = "Comput. Mater. Sci.",
3672 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3673 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3674 author = "G. Kresse and J. Furthm{\"{u}}ller",
3679 title = "Projector augmented-wave method",
3680 author = "P. E. Bl{\"o}chl",
3681 journal = "Phys. Rev. B",
3684 pages = "17953--17979",
3688 doi = "10.1103/PhysRevB.50.17953",
3689 publisher = "American Physical Society",
3690 notes = "paw method",
3694 title = "Norm-Conserving Pseudopotentials",
3695 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3696 journal = "Phys. Rev. Lett.",
3699 pages = "1494--1497",
3703 doi = "10.1103/PhysRevLett.43.1494",
3704 publisher = "American Physical Society",
3705 notes = "norm-conserving pseudopotentials",
3708 @Article{vanderbilt90,
3709 title = "Soft self-consistent pseudopotentials in a generalized
3710 eigenvalue formalism",
3711 author = "David Vanderbilt",
3712 journal = "Phys. Rev. B",
3715 pages = "7892--7895",
3719 doi = "10.1103/PhysRevB.41.7892",
3720 publisher = "American Physical Society",
3721 notes = "vasp pseudopotentials",
3725 title = "Accurate and simple density functional for the
3726 electronic exchange energy: Generalized gradient
3728 author = "John P. Perdew and Yue Wang",
3729 journal = "Phys. Rev. B",
3732 pages = "8800--8802",
3736 doi = "10.1103/PhysRevB.33.8800",
3737 publisher = "American Physical Society",
3738 notes = "rapid communication gga",
3742 title = "Generalized gradient approximations for exchange and
3743 correlation: {A} look backward and forward",
3744 journal = "Physica B: Condensed Matter",
3751 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3752 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3753 author = "John P. Perdew",
3754 notes = "gga overview",
3758 title = "Atoms, molecules, solids, and surfaces: Applications
3759 of the generalized gradient approximation for exchange
3761 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3762 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3763 and Carlos Fiolhais",
3764 journal = "Phys. Rev. B",
3767 pages = "6671--6687",
3771 doi = "10.1103/PhysRevB.46.6671",
3772 publisher = "American Physical Society",
3773 notes = "gga pw91 (as in vasp)",
3776 @Article{baldereschi73,
3777 title = "Mean-Value Point in the Brillouin Zone",
3778 author = "A. Baldereschi",
3779 journal = "Phys. Rev. B",
3782 pages = "5212--5215",
3786 doi = "10.1103/PhysRevB.7.5212",
3787 publisher = "American Physical Society",
3788 notes = "mean value k point",
3792 title = "Ab initio pseudopotential calculations of dopant
3794 journal = "Comput. Mater. Sci.",
3801 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3802 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3803 author = "Jing Zhu",
3804 keywords = "TED (transient enhanced diffusion)",
3805 keywords = "Boron dopant",
3806 keywords = "Carbon dopant",
3807 keywords = "Defect",
3808 keywords = "ab initio pseudopotential method",
3809 keywords = "Impurity cluster",
3810 notes = "binding of c to si interstitial, c in si defects",
3814 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3816 title = "Si{C} buried layer formation by ion beam synthesis at
3820 journal = "Appl. Phys. Lett.",
3823 pages = "2646--2648",
3824 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3825 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3826 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3827 ELECTRON MICROSCOPY",
3828 URL = "http://link.aip.org/link/?APL/66/2646/1",
3829 doi = "10.1063/1.113112",
3830 notes = "precipitation mechanism by substitutional carbon, si
3831 self interstitials react with further implanted c",
3835 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3836 Kolodzey and A. Hairie",
3838 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3842 journal = "J. Appl. Phys.",
3845 pages = "4631--4633",
3846 keywords = "silicon compounds; precipitation; localised modes;
3847 semiconductor epitaxial layers; infrared spectra;
3848 Fourier transform spectra; thermal stability;
3850 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3851 doi = "10.1063/1.368703",
3852 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3856 author = "R Jones and B J Coomer and P R Briddon",
3857 title = "Quantum mechanical modelling of defects in
3859 journal = "J. Phys.: Condens. Matter",
3863 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3865 notes = "ab inito dft intro, vibrational modes, c defect in
3870 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3871 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3872 J. E. Greene and S. G. Bishop",
3874 title = "Carbon incorporation pathways and lattice sites in
3875 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3876 molecular-beam epitaxy",
3879 journal = "J. Appl. Phys.",
3882 pages = "5716--5727",
3883 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3884 doi = "10.1063/1.1465122",
3885 notes = "c substitutional incorporation pathway, dft and expt",
3889 title = "Dynamic properties of interstitial carbon and
3890 carbon-carbon pair defects in silicon",
3891 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3893 journal = "Phys. Rev. B",
3896 pages = "2188--2194",
3900 doi = "10.1103/PhysRevB.55.2188",
3901 publisher = "American Physical Society",
3902 notes = "ab initio c in si and di-carbon defect, no formation
3903 energies, different migration barriers and paths",
3907 title = "Interstitial carbon and the carbon-carbon pair in
3908 silicon: Semiempirical electronic-structure
3910 author = "Matthew J. Burnard and Gary G. DeLeo",
3911 journal = "Phys. Rev. B",
3914 pages = "10217--10225",
3918 doi = "10.1103/PhysRevB.47.10217",
3919 publisher = "American Physical Society",
3920 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3921 carbon defect, formation energies",
3925 title = "Electronic structure of interstitial carbon in
3927 author = "Morgan Besson and Gary G. DeLeo",
3928 journal = "Phys. Rev. B",
3931 pages = "4028--4033",
3935 doi = "10.1103/PhysRevB.43.4028",
3936 publisher = "American Physical Society",
3940 title = "Review of atomistic simulations of surface diffusion
3941 and growth on semiconductors",
3942 journal = "Comput. Mater. Sci.",
3947 note = "Proceedings of the Workshop on Virtual Molecular Beam
3950 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3951 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3952 author = "Efthimios Kaxiras",
3953 notes = "might contain c 100 db formation energy, overview md,
3954 tight binding, first principles",
3957 @Article{kaukonen98,
3958 title = "Effect of {N} and {B} doping on the growth of {CVD}
3960 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3962 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3963 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3965 journal = "Phys. Rev. B",
3968 pages = "9965--9970",
3972 doi = "10.1103/PhysRevB.57.9965",
3973 publisher = "American Physical Society",
3974 notes = "constrained conjugate gradient relaxation technique
3979 title = "Correlation between the antisite pair and the ${DI}$
3981 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3982 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3984 journal = "Phys. Rev. B",
3991 doi = "10.1103/PhysRevB.67.155203",
3992 publisher = "American Physical Society",
3996 title = "Production and recovery of defects in Si{C} after
3997 irradiation and deformation",
3998 journal = "J. Nucl. Mater.",
4001 pages = "1803--1808",
4005 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4006 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4007 author = "J. Chen and P. Jung and H. Klein",
4011 title = "Accumulation, dynamic annealing and thermal recovery
4012 of ion-beam-induced disorder in silicon carbide",
4013 journal = "Nucl. Instrum. Methods Phys. Res. B",
4020 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4021 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4022 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4025 @Article{bockstedte03,
4026 title = "Ab initio study of the migration of intrinsic defects
4028 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4030 journal = "Phys. Rev. B",
4037 doi = "10.1103/PhysRevB.68.205201",
4038 publisher = "American Physical Society",
4039 notes = "defect migration in sic",
4043 title = "Theoretical study of vacancy diffusion and
4044 vacancy-assisted clustering of antisites in Si{C}",
4045 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4047 journal = "Phys. Rev. B",
4054 doi = "10.1103/PhysRevB.68.155208",
4055 publisher = "American Physical Society",
4059 journal = "Telegrafiya i Telefoniya bez Provodov",
4063 author = "O. V. Lossev",
4067 title = "Luminous carborundum detector and detection effect and
4068 oscillations with crystals",
4069 journal = "Philosophical Magazine Series 7",
4072 pages = "1024--1044",
4074 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4075 author = "O. V. Lossev",
4079 journal = "Physik. Zeitschr.",
4083 author = "O. V. Lossev",
4087 journal = "Physik. Zeitschr.",
4091 author = "O. V. Lossev",
4095 journal = "Physik. Zeitschr.",
4099 author = "O. V. Lossev",
4103 title = "A note on carborundum",
4104 journal = "Electrical World",
4108 author = "H. J. Round",
4111 @Article{vashishath08,
4112 title = "Recent trends in silicon carbide device research",
4113 journal = "Mj. Int. J. Sci. Tech.",
4118 author = "Munish Vashishath and Ashoke K. Chatterjee",
4119 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4120 notes = "sic polytype electronic properties",
4124 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4126 title = "Growth and Properties of beta-Si{C} Single Crystals",
4129 journal = "Journal of Applied Physics",
4133 URL = "http://link.aip.org/link/?JAP/37/333/1",
4134 doi = "10.1063/1.1707837",
4135 notes = "sic melt growth",
4139 author = "A. E. van Arkel and J. H. de Boer",
4140 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4142 publisher = "WILEY-VCH Verlag GmbH",
4144 journal = "Z. Anorg. Chem.",
4147 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4148 doi = "10.1002/zaac.19251480133",
4149 notes = "van arkel apparatus",
4153 author = "K. Moers",
4155 journal = "Z. Anorg. Chem.",
4158 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4163 author = "J. T. Kendall",
4164 title = "Electronic Conduction in Silicon Carbide",
4167 journal = "The Journal of Chemical Physics",
4171 URL = "http://link.aip.org/link/?JCP/21/821/1",
4172 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4177 author = "J. A. Lely",
4179 journal = "Ber. Deut. Keram. Ges.",
4182 notes = "lely sublimation growth process",
4185 @Article{knippenberg63,
4186 author = "W. F. Knippenberg",
4188 journal = "Philips Res. Repts.",
4191 notes = "acheson process",
4194 @Article{hoffmann82,
4195 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4198 title = "Silicon carbide blue light emitting diodes with
4199 improved external quantum efficiency",
4202 journal = "Journal of Applied Physics",
4205 pages = "6962--6967",
4206 keywords = "light emitting diodes; silicon carbides; quantum
4207 efficiency; visible radiation; experimental data;
4208 epitaxy; fabrication; medium temperature; layers;
4209 aluminium; nitrogen; substrates; pn junctions;
4210 electroluminescence; spectra; current density;
4212 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4213 doi = "10.1063/1.330041",
4214 notes = "blue led, sublimation process",
4218 author = "Philip Neudeck",
4219 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4220 Road 44135 Cleveland OH",
4221 title = "Progress in silicon carbide semiconductor electronics
4223 journal = "Journal of Electronic Materials",
4224 publisher = "Springer Boston",
4226 keyword = "Chemistry and Materials Science",
4230 URL = "http://dx.doi.org/10.1007/BF02659688",
4231 note = "10.1007/BF02659688",
4233 notes = "sic data, advantages of 3c sic",
4236 @Article{bhatnagar93,
4237 author = "M. Bhatnagar and B. J. Baliga",
4238 journal = "Electron Devices, IEEE Transactions on",
4239 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4246 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4247 rectifiers;Si;SiC;breakdown voltages;drift region
4248 properties;output characteristics;power MOSFETs;power
4249 semiconductor devices;switching characteristics;thermal
4250 analysis;Schottky-barrier diodes;electric breakdown of
4251 solids;insulated gate field effect transistors;power
4252 transistors;semiconductor materials;silicon;silicon
4253 compounds;solid-state rectifiers;thermal analysis;",
4254 doi = "10.1109/16.199372",
4256 notes = "comparison 3c 6h sic and si devices",
4260 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4261 A. Powell and C. S. Salupo and L. G. Matus",
4262 journal = "Electron Devices, IEEE Transactions on",
4263 title = "Electrical properties of epitaxial 3{C}- and
4264 6{H}-Si{C} p-n junction diodes produced side-by-side on
4265 6{H}-Si{C} substrates",
4271 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4272 C;6H-SiC layers;6H-SiC substrates;CVD
4273 process;SiC;chemical vapor deposition;doping;electrical
4274 properties;epitaxial layers;light
4275 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4276 diodes;polytype;rectification characteristics;reverse
4277 leakage current;reverse voltages;temperature;leakage
4278 currents;power electronics;semiconductor
4279 diodes;semiconductor epitaxial layers;semiconductor
4280 growth;semiconductor materials;silicon
4281 compounds;solid-state rectifiers;substrates;vapour
4282 phase epitaxial growth;",
4283 doi = "10.1109/16.285038",
4285 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4290 author = "N. Schulze and D. L. Barrett and G. Pensl",
4292 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4293 single crystals by physical vapor transport",
4296 journal = "Applied Physics Letters",
4299 pages = "1632--1634",
4300 keywords = "silicon compounds; semiconductor materials;
4301 semiconductor growth; crystal growth from vapour;
4302 photoluminescence; Hall mobility",
4303 URL = "http://link.aip.org/link/?APL/72/1632/1",
4304 doi = "10.1063/1.121136",
4305 notes = "micropipe free 6h-sic pvt growth",
4309 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4311 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4314 journal = "Applied Physics Letters",
4318 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4319 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4320 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4321 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4323 URL = "http://link.aip.org/link/?APL/50/221/1",
4324 doi = "10.1063/1.97667",
4325 notes = "apb 3c-sic heteroepitaxy on si",
4328 @Article{shibahara86,
4329 title = "Surface morphology of cubic Si{C}(100) grown on
4330 Si(100) by chemical vapor deposition",
4331 journal = "Journal of Crystal Growth",
4338 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4339 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4340 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4342 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4345 @Article{desjardins96,
4346 author = "P. Desjardins and J. E. Greene",
4348 title = "Step-flow epitaxial growth on two-domain surfaces",
4351 journal = "Journal of Applied Physics",
4354 pages = "1423--1434",
4355 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4356 FILM GROWTH; SURFACE STRUCTURE",
4357 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4358 doi = "10.1063/1.360980",
4359 notes = "apb model",
4363 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4365 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4366 carbonization of silicon",
4369 journal = "Journal of Applied Physics",
4372 pages = "2070--2073",
4373 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4374 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4376 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4377 doi = "10.1063/1.360184",
4378 notes = "ssmbe of sic on si, lower temperatures",
4382 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4383 {MBE} using surface superstructure",
4384 journal = "Journal of Crystal Growth",
4391 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4392 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4393 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4394 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4395 notes = "gas source mbe of 3c-sic on 6h-sic",
4398 @Article{yoshinobu92,
4399 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4400 and Takashi Fuyuki and Hiroyuki Matsunami",
4402 title = "Lattice-matched epitaxial growth of single crystalline
4403 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4404 molecular beam epitaxy",
4407 journal = "Applied Physics Letters",
4411 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4412 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4413 INTERFACE STRUCTURE",
4414 URL = "http://link.aip.org/link/?APL/60/824/1",
4415 doi = "10.1063/1.107430",
4416 notes = "gas source mbe of 3c-sic on 6h-sic",
4419 @Article{yoshinobu90,
4420 title = "Atomic level control in gas source {MBE} growth of
4422 journal = "Journal of Crystal Growth",
4429 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4430 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4431 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4432 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4433 notes = "gas source mbe of 3c-sic on 3c-sic",
4437 title = "Atomic layer epitaxy controlled by surface
4438 superstructures in Si{C}",
4439 journal = "Thin Solid Films",
4446 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4447 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4448 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4450 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4455 title = "Microscopic mechanisms of accurate layer-by-layer
4456 growth of [beta]-Si{C}",
4457 journal = "Thin Solid Films",
4464 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4465 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4466 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4467 and S. Misawa and E. Sakuma and S. Yoshida",
4468 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4473 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4475 title = "Effects of gas flow ratio on silicon carbide thin film
4476 growth mode and polytype formation during gas-source
4477 molecular beam epitaxy",
4480 journal = "Applied Physics Letters",
4483 pages = "2851--2853",
4484 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4485 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4486 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4488 URL = "http://link.aip.org/link/?APL/65/2851/1",
4489 doi = "10.1063/1.112513",
4490 notes = "gas source mbe of 6h-sic on 6h-sic",
4494 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4495 title = "Heterointerface Control and Epitaxial Growth of
4496 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4497 publisher = "WILEY-VCH Verlag",
4499 journal = "physica status solidi (b)",
4502 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4507 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4508 journal = "Journal of Crystal Growth",
4515 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4516 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4517 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4518 keywords = "Reflection high-energy electron diffraction (RHEED)",
4519 keywords = "Scanning electron microscopy (SEM)",
4520 keywords = "Silicon carbide",
4521 keywords = "Silicon",
4522 keywords = "Island growth",
4523 notes = "lower temperature, 550-700",
4526 @Article{hatayama95,
4527 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4528 on Si using hydrocarbon radicals by gas source
4529 molecular beam epitaxy",
4530 journal = "Journal of Crystal Growth",
4537 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4538 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4539 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4540 and Hiroyuki Matsunami",
4544 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4545 title = "The Preference of Silicon Carbide for Growth in the
4546 Metastable Cubic Form",
4547 journal = "Journal of the American Ceramic Society",
4550 publisher = "Blackwell Publishing Ltd",
4552 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4553 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4554 pages = "2630--2633",
4555 keywords = "silicon carbide, crystal growth, crystal structure,
4556 calculations, stability",
4558 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4559 polytype dft calculation refs",
4562 @Article{allendorf91,
4563 title = "The adsorption of {H}-atoms on polycrystalline
4564 [beta]-silicon carbide",
4565 journal = "Surface Science",
4572 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4573 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4574 author = "Mark D. Allendorf and Duane A. Outka",
4575 notes = "h adsorption on 3c-sic",
4578 @Article{eaglesham93,
4579 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4580 D. P. Adams and S. M. Yalisove",
4582 title = "Effect of {H} on Si molecular-beam epitaxy",
4585 journal = "Journal of Applied Physics",
4588 pages = "6615--6618",
4589 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4590 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4591 DIFFUSION; ADSORPTION",
4592 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4593 doi = "10.1063/1.355101",
4594 notes = "h incorporation on si surface, lower surface
4599 author = "Ronald C. Newman",
4600 title = "Carbon in Crystalline Silicon",
4601 journal = "MRS Online Proceedings Library",
4606 doi = "10.1557/PROC-59-403",
4607 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4608 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4612 title = "The diffusivity of carbon in silicon",
4613 journal = "Journal of Physics and Chemistry of Solids",
4620 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4621 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4622 author = "R. C. Newman and J. Wakefield",
4623 notes = "diffusivity of substitutional c in si",
4627 author = "U. Gösele",
4628 title = "The Role of Carbon and Point Defects in Silicon",
4629 journal = "MRS Online Proceedings Library",
4634 doi = "10.1557/PROC-59-419",
4635 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4636 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4639 @Article{mukashev82,
4640 title = "Defects in Carbon-Implanted Silicon",
4641 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4642 Fukuoka and Haruo Saito",
4643 journal = "Japanese Journal of Applied Physics",
4645 number = "Part 1, No. 2",
4649 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4650 doi = "10.1143/JJAP.21.399",
4651 publisher = "The Japan Society of Applied Physics",
4655 title = "Convergence of supercell calculations for point
4656 defects in semiconductors: Vacancy in silicon",
4657 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4659 journal = "Phys. Rev. B",
4662 pages = "1318--1325",
4666 doi = "10.1103/PhysRevB.58.1318",
4667 publisher = "American Physical Society",
4668 notes = "convergence k point supercell size, vacancy in
4673 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4674 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4675 K{\"{o}}gler and W. Skorupa",
4677 title = "Spectroscopic characterization of phases formed by
4678 high-dose carbon ion implantation in silicon",
4681 journal = "Journal of Applied Physics",
4684 pages = "2978--2984",
4685 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4686 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4687 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4688 DEPENDENCE; PRECIPITATES; ANNEALING",
4689 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4690 doi = "10.1063/1.358714",
4693 @Article{romano-rodriguez96,
4694 title = "Detailed analysis of [beta]-Si{C} formation by high
4695 dose carbon ion implantation in silicon",
4696 journal = "Materials Science and Engineering B",
4701 note = "European Materials Research Society 1995 Spring
4702 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4703 Oxygen in Silicon and in Other Elemental
4706 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4707 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4708 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4709 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4711 keywords = "Silicon",
4712 keywords = "Ion implantation",
4713 notes = "incoherent 3c-sic precipitate",