2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
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1159 Silicon Materials Research for Electronic and
1160 Photovoltaic Applications",
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1215 Rauschenbach and B. Stritzker",
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1223 doi = "10.1557/PROC-354-171",
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1230 title = "Formation of buried epitaxial silicon carbide layers
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1256 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
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1267 title = "Mechanisms of Si{C} Formation in the Ion Beam
1268 Synthesis of 3{C}-Si{C} Layers in Silicon",
1269 journal = "Materials Science Forum",
1274 doi = "10.4028/www.scientific.net/MSF.264-268.215",
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1283 nanocrystals for the ion beam synthesis of buried Si{C}
1285 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1298 @Article{lindner99_2,
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1323 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
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1329 title = "High-dose carbon implantations into silicon:
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1331 author = "J. K. N. Lindner",
1332 journal = "Appl. Phys. A",
1336 doi = "10.1007/s00339-002-2062-8",
1337 notes = "ibs, burried sic layers",
1341 title = "On the balance between ion beam induced nanoparticle
1342 formation and displacive precipitate resolution in the
1344 journal = "Mater. Sci. Eng., C",
1349 note = "Current Trends in Nanoscience - from Materials to
1352 doi = "DOI: 10.1016/j.msec.2005.09.099",
1353 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
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1356 notes = "c int diffusion barrier",
1360 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1361 application in buffer layer for Ga{N} epitaxial
1363 journal = "Applied Surface Science",
1368 note = "APHYS'03 Special Issue",
1370 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1371 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
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1377 @Article{yamamoto04,
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1379 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1380 implantation into Si(1Â 1Â 1) substrate",
1381 journal = "Journal of Crystal Growth",
1386 note = "Proceedings of the 11th Biennial (US) Workshop on
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1392 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1393 notes = "gan on 3c-sic",
1397 title = "Substrates for gallium nitride epitaxy",
1398 journal = "Materials Science and Engineering: R: Reports",
1405 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
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1411 @Article{takeuchi91,
1412 title = "Growth of single crystalline Ga{N} film on Si
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1414 journal = "Journal of Crystal Growth",
1421 doi = "DOI: 10.1016/0022-0248(91)90817-O",
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1424 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1425 notes = "gan on 3c-sic (first time?)",
1429 author = "B. J. Alder and T. E. Wainwright",
1430 title = "Phase Transition for a Hard Sphere System",
1433 journal = "J. Chem. Phys.",
1436 pages = "1208--1209",
1437 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1438 doi = "10.1063/1.1743957",
1442 author = "B. J. Alder and T. E. Wainwright",
1443 title = "Studies in Molecular Dynamics. {I}. General Method",
1446 journal = "J. Chem. Phys.",
1450 URL = "http://link.aip.org/link/?JCP/31/459/1",
1451 doi = "10.1063/1.1730376",
1454 @Article{tersoff_si1,
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1457 author = "J. Tersoff",
1458 journal = "Phys. Rev. Lett.",
1465 doi = "10.1103/PhysRevLett.56.632",
1466 publisher = "American Physical Society",
1469 @Article{tersoff_si2,
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1476 pages = "6991--7000",
1480 doi = "10.1103/PhysRevB.37.6991",
1481 publisher = "American Physical Society",
1484 @Article{tersoff_si3,
1485 title = "Empirical interatomic potential for silicon with
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1487 author = "J. Tersoff",
1488 journal = "Phys. Rev. B",
1491 pages = "9902--9905",
1495 doi = "10.1103/PhysRevB.38.9902",
1496 publisher = "American Physical Society",
1500 title = "Empirical Interatomic Potential for Carbon, with
1501 Applications to Amorphous Carbon",
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1503 journal = "Phys. Rev. Lett.",
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1510 doi = "10.1103/PhysRevLett.61.2879",
1511 publisher = "American Physical Society",
1515 title = "Modeling solid-state chemistry: Interatomic potentials
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1517 author = "J. Tersoff",
1518 journal = "Phys. Rev. B",
1521 pages = "5566--5568",
1525 doi = "10.1103/PhysRevB.39.5566",
1526 publisher = "American Physical Society",
1530 title = "Carbon defects and defect reactions in silicon",
1531 author = "J. Tersoff",
1532 journal = "Phys. Rev. Lett.",
1535 pages = "1757--1760",
1539 doi = "10.1103/PhysRevLett.64.1757",
1540 publisher = "American Physical Society",
1544 title = "Point defects and dopant diffusion in silicon",
1545 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1546 journal = "Rev. Mod. Phys.",
1553 doi = "10.1103/RevModPhys.61.289",
1554 publisher = "American Physical Society",
1558 title = "Silicon carbide: synthesis and processing",
1559 journal = "Nucl. Instrum. Methods Phys. Res. B",
1564 note = "Radiation Effects in Insulators",
1566 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1567 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
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1572 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1573 Palmour and J. A. Edmond",
1574 journal = "Proceedings of the IEEE",
1575 title = "Thin film deposition and microelectronic and
1576 optoelectronic device fabrication and characterization
1577 in monocrystalline alpha and beta silicon carbide",
1583 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1584 diode;SiC;dry etching;electrical
1585 contacts;etching;impurity incorporation;optoelectronic
1586 device fabrication;solid-state devices;surface
1587 chemistry;Schottky effect;Schottky gate field effect
1588 transistors;Schottky-barrier
1589 diodes;etching;heterojunction bipolar
1590 transistors;insulated gate field effect
1591 transistors;light emitting diodes;semiconductor
1592 materials;semiconductor thin films;silicon compounds;",
1593 doi = "10.1109/5.90132",
1595 notes = "sic growth methods",
1599 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1600 Lin and B. Sverdlov and M. Burns",
1602 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1603 ZnSe-based semiconductor device technologies",
1606 journal = "J. Appl. Phys.",
1609 pages = "1363--1398",
1610 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1611 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1612 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1614 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1615 doi = "10.1063/1.358463",
1616 notes = "sic intro, properties",
1620 author = "Noch Unbekannt",
1621 title = "How to find references",
1622 journal = "Journal of Applied References",
1629 title = "Atomistic simulation of thermomechanical properties of
1631 author = "Meijie Tang and Sidney Yip",
1632 journal = "Phys. Rev. B",
1635 pages = "15150--15159",
1638 doi = "10.1103/PhysRevB.52.15150",
1639 notes = "modified tersoff, scale cutoff with volume, promising
1640 tersoff reparametrization",
1641 publisher = "American Physical Society",
1645 title = "Silicon carbide as a new {MEMS} technology",
1646 journal = "Sensors and Actuators A: Physical",
1652 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1653 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1654 author = "Pasqualina M. Sarro",
1656 keywords = "Silicon carbide",
1657 keywords = "Micromachining",
1658 keywords = "Mechanical stress",
1662 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1663 semiconductor for high-temperature applications: {A}
1665 journal = "Solid-State Electronics",
1668 pages = "1409--1422",
1671 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1672 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1673 author = "J. B. Casady and R. W. Johnson",
1674 notes = "sic intro",
1677 @Article{giancarli98,
1678 title = "Design requirements for Si{C}/Si{C} composites
1679 structural material in fusion power reactor blankets",
1680 journal = "Fusion Engineering and Design",
1686 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1687 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1688 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1689 Marois and N. B. Morley and J. F. Salavy",
1693 title = "Electrical and optical characterization of Si{C}",
1694 journal = "Physica B: Condensed Matter",
1700 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1701 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1702 author = "G. Pensl and W. J. Choyke",
1706 title = "Investigation of growth processes of ingots of silicon
1707 carbide single crystals",
1708 journal = "J. Cryst. Growth",
1713 notes = "modified lely process",
1715 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1716 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1717 author = "Yu. M. Tairov and V. F. Tsvetkov",
1721 title = "General principles of growing large-size single
1722 crystals of various silicon carbide polytypes",
1723 journal = "Journal of Crystal Growth",
1730 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1731 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1732 author = "Yu.M. Tairov and V. F. Tsvetkov",
1736 title = "Si{C} boule growth by sublimation vapor transport",
1737 journal = "Journal of Crystal Growth",
1744 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1745 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1746 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1747 R. H. Hopkins and W. J. Choyke",
1751 title = "Growth of large Si{C} single crystals",
1752 journal = "Journal of Crystal Growth",
1759 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1760 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1761 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1762 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1767 title = "Control of polytype formation by surface energy
1768 effects during the growth of Si{C} monocrystals by the
1769 sublimation method",
1770 journal = "Journal of Crystal Growth",
1777 doi = "DOI: 10.1016/0022-0248(93)90397-F",
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1779 author = "R. A. Stein and P. Lanig",
1780 notes = "6h and 4h, sublimation technique",
1784 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1787 title = "Production of large-area single-crystal wafers of
1788 cubic Si{C} for semiconductor devices",
1791 journal = "Appl. Phys. Lett.",
1795 keywords = "silicon carbides; layers; chemical vapor deposition;
1797 URL = "http://link.aip.org/link/?APL/42/460/1",
1798 doi = "10.1063/1.93970",
1799 notes = "cvd of 3c-sic on si, sic buffer layer",
1803 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1804 and Hiroyuki Matsunami",
1806 title = "Epitaxial growth and electric characteristics of cubic
1810 journal = "J. Appl. Phys.",
1813 pages = "4889--4893",
1814 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1815 doi = "10.1063/1.338355",
1816 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1821 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1823 title = "Growth and Characterization of Cubic Si{C}
1824 Single-Crystal Films on Si",
1827 journal = "Journal of The Electrochemical Society",
1830 pages = "1558--1565",
1831 keywords = "semiconductor materials; silicon compounds; carbon
1832 compounds; crystal morphology; electron mobility",
1833 URL = "http://link.aip.org/link/?JES/134/1558/1",
1834 doi = "10.1149/1.2100708",
1835 notes = "blue light emitting diodes (led)",
1838 @Article{powell87_2,
1839 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
1840 C. M. Chorey and T. T. Cheng and P. Pirouz",
1842 title = "Improved beta-Si{C} heteroepitaxial films using
1843 off-axis Si substrates",
1846 journal = "Applied Physics Letters",
1850 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
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1853 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
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1856 doi = "10.1063/1.98824",
1857 notes = "improved sic on off-axis si substrates, reduced apbs",
1861 title = "Crystal growth of Si{C} by step-controlled epitaxy",
1862 journal = "Journal of Crystal Growth",
1869 doi = "DOI: 10.1016/0022-0248(90)90013-B",
1870 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1871 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
1873 notes = "step-controlled epitaxy model",
1877 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1878 and Hiroyuki Matsunami",
1879 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1883 journal = "J. Appl. Phys.",
1887 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1888 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1890 URL = "http://link.aip.org/link/?JAP/73/726/1",
1891 doi = "10.1063/1.353329",
1892 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1895 @Article{powell90_2,
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1897 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1898 Yoganathan and J. Yang and P. Pirouz",
1900 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
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1904 journal = "Applied Physics Letters",
1907 pages = "1442--1444",
1908 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1909 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
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1911 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
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1913 doi = "10.1063/1.102492",
1914 notes = "cvd of 6h-sic on 6h-sic",
1918 author = "H. S. Kong and J. T. Glass and R. F. Davis",
1920 title = "Chemical vapor deposition and characterization of
1921 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
1925 journal = "Journal of Applied Physics",
1928 pages = "2672--2679",
1929 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
1930 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
1931 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
1932 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
1933 PHASE EPITAXY; CRYSTAL ORIENTATION",
1934 URL = "http://link.aip.org/link/?JAP/64/2672/1",
1935 doi = "10.1063/1.341608",
1939 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1940 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1941 Yoganathan and J. Yang and P. Pirouz",
1943 title = "Growth of improved quality 3{C}-Si{C} films on
1944 6{H}-Si{C} substrates",
1947 journal = "Appl. Phys. Lett.",
1950 pages = "1353--1355",
1951 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1952 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1953 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1955 URL = "http://link.aip.org/link/?APL/56/1353/1",
1956 doi = "10.1063/1.102512",
1957 notes = "cvd of 3c-sic on 6h-sic",
1961 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
1962 Rozgonyi and K. L. More",
1964 title = "An examination of double positioning boundaries and
1965 interface misfit in beta-Si{C} films on alpha-Si{C}
1969 journal = "Journal of Applied Physics",
1972 pages = "2645--2650",
1973 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
1974 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1975 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1976 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1977 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1978 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1979 doi = "10.1063/1.341004",
1983 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1984 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1985 and W. J. Choyke and L. Clemen and M. Yoganathan",
1987 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1988 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1991 journal = "Applied Physics Letters",
1995 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1996 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1997 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1998 URL = "http://link.aip.org/link/?APL/59/333/1",
1999 doi = "10.1063/1.105587",
2003 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2004 Thokala and M. J. Loboda",
2006 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2007 films on 6{H}-Si{C} by chemical vapor deposition from
2011 journal = "J. Appl. Phys.",
2014 pages = "1271--1273",
2015 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2016 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2018 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2019 doi = "10.1063/1.360368",
2020 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2024 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2025 properties of its p-n junction",
2026 journal = "Journal of Crystal Growth",
2033 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2034 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2035 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2037 notes = "first time ssmbe of 3c-sic on 6h-sic",
2041 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2042 [alpha]-Si{C}(0001) at low temperatures by solid-source
2043 molecular beam epitaxy",
2044 journal = "J. Cryst. Growth",
2050 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2051 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2052 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2053 Schr{\"{o}}ter and W. Richter",
2054 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2057 @Article{fissel95_apl,
2058 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2060 title = "Low-temperature growth of Si{C} thin films on Si and
2061 6{H}--Si{C} by solid-source molecular beam epitaxy",
2064 journal = "Appl. Phys. Lett.",
2067 pages = "3182--3184",
2068 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2070 URL = "http://link.aip.org/link/?APL/66/3182/1",
2071 doi = "10.1063/1.113716",
2072 notes = "mbe 3c-sic on si and 6h-sic",
2076 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2077 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2079 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2080 migration enhanced epitaxy controlled to an atomic
2081 level using surface superstructures",
2084 journal = "Applied Physics Letters",
2087 pages = "1204--1206",
2088 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2089 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2091 URL = "http://link.aip.org/link/?APL/68/1204/1",
2092 doi = "10.1063/1.115969",
2093 notes = "ss mbe sic, superstructure, reconstruction",
2097 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2098 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2099 C. M. Bertoni and A. Catellani",
2100 journal = "Phys. Rev. Lett.",
2107 doi = "10.1103/PhysRevLett.91.136101",
2108 publisher = "American Physical Society",
2109 notes = "dft calculations mbe sic growth",
2113 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2115 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2119 journal = "Appl. Phys. Lett.",
2123 URL = "http://link.aip.org/link/?APL/18/509/1",
2124 doi = "10.1063/1.1653516",
2125 notes = "first time sic by ibs, follow cites for precipitation
2130 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2131 and E. V. Lubopytova",
2132 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2133 by ion implantation",
2134 publisher = "Taylor \& Francis",
2136 journal = "Radiation Effects",
2140 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2141 notes = "3c-sic for different temperatures, amorphous, poly,
2142 single crystalline",
2145 @Article{akimchenko80,
2146 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2147 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2148 title = "Structure and optical properties of silicon implanted
2149 by high doses of 70 and 310 ke{V} carbon ions",
2150 publisher = "Taylor \& Francis",
2152 journal = "Radiation Effects",
2156 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2157 notes = "3c-sic nucleation by thermal spikes",
2161 title = "Structure and annealing properties of silicon carbide
2162 thin layers formed by implantation of carbon ions in
2164 journal = "Thin Solid Films",
2171 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2172 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2173 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2178 title = "Characteristics of the synthesis of [beta]-Si{C} by
2179 the implantation of carbon ions into silicon",
2180 journal = "Thin Solid Films",
2187 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2188 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2189 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2194 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2195 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2196 Chater and J. A. Iulner and J. Davis",
2197 title = "Formation mechanisms and structures of insulating
2198 compounds formed in silicon by ion beam synthesis",
2199 publisher = "Taylor \& Francis",
2201 journal = "Radiation Effects",
2205 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2206 notes = "ibs, comparison with sio and sin, higher temp or
2211 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2212 J. Davis and G. E. Celler",
2214 title = "Formation of buried layers of beta-Si{C} using ion
2215 beam synthesis and incoherent lamp annealing",
2218 journal = "Appl. Phys. Lett.",
2221 pages = "2242--2244",
2222 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2223 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2224 URL = "http://link.aip.org/link/?APL/51/2242/1",
2225 doi = "10.1063/1.98953",
2226 notes = "nice tem images, sic by ibs",
2230 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2231 and M. Olivier and A. M. Papon and G. Rolland",
2233 title = "High-temperature ion beam synthesis of cubic Si{C}",
2236 journal = "Journal of Applied Physics",
2239 pages = "2908--2912",
2240 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2241 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2242 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2243 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2244 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2245 REACTIONS; MONOCRYSTALS",
2246 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2247 doi = "10.1063/1.346092",
2248 notes = "triple energy implantation to overcome high annealing
2253 author = "R. I. Scace and G. A. Slack",
2255 title = "Solubility of Carbon in Silicon and Germanium",
2258 journal = "J. Chem. Phys.",
2261 pages = "1551--1555",
2262 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2263 doi = "10.1063/1.1730236",
2264 notes = "solubility of c in c-si, si-c phase diagram",
2268 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2269 F. W. Saris and W. Vandervorst",
2271 title = "Role of {C} and {B} clusters in transient diffusion of
2275 journal = "Appl. Phys. Lett.",
2278 pages = "1150--1152",
2279 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2280 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2282 URL = "http://link.aip.org/link/?APL/68/1150/1",
2283 doi = "10.1063/1.115706",
2284 notes = "suppression of transient enhanced diffusion (ted)",
2288 title = "Implantation and transient boron diffusion: the role
2289 of the silicon self-interstitial",
2290 journal = "Nucl. Instrum. Methods Phys. Res. B",
2295 note = "Selected Papers of the Tenth International Conference
2296 on Ion Implantation Technology (IIT '94)",
2298 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2299 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2300 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2305 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2306 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2307 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2310 title = "Physical mechanisms of transient enhanced dopant
2311 diffusion in ion-implanted silicon",
2314 journal = "J. Appl. Phys.",
2317 pages = "6031--6050",
2318 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2319 doi = "10.1063/1.364452",
2320 notes = "ted, transient enhanced diffusion, c silicon trap",
2324 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2326 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2327 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2330 journal = "Appl. Phys. Lett.",
2334 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2335 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2336 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2338 URL = "http://link.aip.org/link/?APL/64/324/1",
2339 doi = "10.1063/1.111195",
2340 notes = "beta sic nano crystals in si, mbe, annealing",
2344 author = "Richard A. Soref",
2346 title = "Optical band gap of the ternary semiconductor Si[sub 1
2347 - x - y]Ge[sub x]{C}[sub y]",
2350 journal = "J. Appl. Phys.",
2353 pages = "2470--2472",
2354 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2355 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2357 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2358 doi = "10.1063/1.349403",
2359 notes = "band gap of strained si by c",
2363 author = "E Kasper",
2364 title = "Superlattices of group {IV} elements, a new
2365 possibility to produce direct band gap material",
2366 journal = "Physica Scripta",
2369 URL = "http://stacks.iop.org/1402-4896/T35/232",
2371 notes = "superlattices, convert indirect band gap into a
2376 author = "H. J. Osten and J. Griesche and S. Scalese",
2378 title = "Substitutional carbon incorporation in epitaxial
2379 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2380 molecular beam epitaxy",
2383 journal = "Appl. Phys. Lett.",
2387 keywords = "molecular beam epitaxial growth; semiconductor growth;
2388 wide band gap semiconductors; interstitials; silicon
2390 URL = "http://link.aip.org/link/?APL/74/836/1",
2391 doi = "10.1063/1.123384",
2392 notes = "substitutional c in si",
2395 @Article{hohenberg64,
2396 title = "Inhomogeneous Electron Gas",
2397 author = "P. Hohenberg and W. Kohn",
2398 journal = "Phys. Rev.",
2401 pages = "B864--B871",
2405 doi = "10.1103/PhysRev.136.B864",
2406 publisher = "American Physical Society",
2407 notes = "density functional theory, dft",
2411 title = "Self-Consistent Equations Including Exchange and
2412 Correlation Effects",
2413 author = "W. Kohn and L. J. Sham",
2414 journal = "Phys. Rev.",
2417 pages = "A1133--A1138",
2421 doi = "10.1103/PhysRev.140.A1133",
2422 publisher = "American Physical Society",
2423 notes = "dft, exchange and correlation",
2427 title = "Strain-stabilized highly concentrated pseudomorphic
2428 $Si1-x$$Cx$ layers in Si",
2429 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2431 journal = "Phys. Rev. Lett.",
2434 pages = "3578--3581",
2438 doi = "10.1103/PhysRevLett.72.3578",
2439 publisher = "American Physical Society",
2440 notes = "high c concentration in si, heterostructure, strained
2445 title = "Electron Transport Model for Strained Silicon-Carbon
2447 author = "Shu-Tong Chang and Chung-Yi Lin",
2448 journal = "Japanese J. Appl. Phys.",
2451 pages = "2257--2262",
2454 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2455 doi = "10.1143/JJAP.44.2257",
2456 publisher = "The Japan Society of Applied Physics",
2457 notes = "enhance of electron mobility in starined si",
2461 author = "H. J. Osten and P. Gaworzewski",
2463 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2464 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2468 journal = "J. Appl. Phys.",
2471 pages = "4977--4981",
2472 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2473 semiconductors; semiconductor epitaxial layers; carrier
2474 density; Hall mobility; interstitials; defect states",
2475 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2476 doi = "10.1063/1.366364",
2477 notes = "charge transport in strained si",
2481 title = "Carbon-mediated aggregation of self-interstitials in
2482 silicon: {A} large-scale molecular dynamics study",
2483 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2484 journal = "Phys. Rev. B",
2491 doi = "10.1103/PhysRevB.69.155214",
2492 publisher = "American Physical Society",
2493 notes = "simulation using promising tersoff reparametrization",
2497 title = "Event-Based Relaxation of Continuous Disordered
2499 author = "G. T. Barkema and Normand Mousseau",
2500 journal = "Phys. Rev. Lett.",
2503 pages = "4358--4361",
2507 doi = "10.1103/PhysRevLett.77.4358",
2508 publisher = "American Physical Society",
2509 notes = "activation relaxation technique, art, speed up slow
2514 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2515 Minoukadeh and F. Willaime",
2517 title = "Some improvements of the activation-relaxation
2518 technique method for finding transition pathways on
2519 potential energy surfaces",
2522 journal = "J. Chem. Phys.",
2528 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2529 surfaces; vacancies (crystal)",
2530 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2531 doi = "10.1063/1.3088532",
2532 notes = "improvements to art, refs for methods to find
2533 transition pathways",
2536 @Article{parrinello81,
2537 author = "M. Parrinello and A. Rahman",
2539 title = "Polymorphic transitions in single crystals: {A} new
2540 molecular dynamics method",
2543 journal = "J. Appl. Phys.",
2546 pages = "7182--7190",
2547 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2548 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2549 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2550 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2551 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2553 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2554 doi = "10.1063/1.328693",
2557 @Article{stillinger85,
2558 title = "Computer simulation of local order in condensed phases
2560 author = "Frank H. Stillinger and Thomas A. Weber",
2561 journal = "Phys. Rev. B",
2564 pages = "5262--5271",
2568 doi = "10.1103/PhysRevB.31.5262",
2569 publisher = "American Physical Society",
2573 title = "Empirical potential for hydrocarbons for use in
2574 simulating the chemical vapor deposition of diamond
2576 author = "Donald W. Brenner",
2577 journal = "Phys. Rev. B",
2580 pages = "9458--9471",
2584 doi = "10.1103/PhysRevB.42.9458",
2585 publisher = "American Physical Society",
2586 notes = "brenner hydro carbons",
2590 title = "Modeling of Covalent Bonding in Solids by Inversion of
2591 Cohesive Energy Curves",
2592 author = "Martin Z. Bazant and Efthimios Kaxiras",
2593 journal = "Phys. Rev. Lett.",
2596 pages = "4370--4373",
2600 doi = "10.1103/PhysRevLett.77.4370",
2601 publisher = "American Physical Society",
2602 notes = "first si edip",
2606 title = "Environment-dependent interatomic potential for bulk
2608 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2610 journal = "Phys. Rev. B",
2613 pages = "8542--8552",
2617 doi = "10.1103/PhysRevB.56.8542",
2618 publisher = "American Physical Society",
2619 notes = "second si edip",
2623 title = "Interatomic potential for silicon defects and
2625 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2626 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2627 journal = "Phys. Rev. B",
2630 pages = "2539--2550",
2634 doi = "10.1103/PhysRevB.58.2539",
2635 publisher = "American Physical Society",
2636 notes = "latest si edip, good dislocation explanation",
2640 title = "{PARCAS} molecular dynamics code",
2641 author = "K. Nordlund",
2646 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2648 author = "Arthur F. Voter",
2649 journal = "Phys. Rev. Lett.",
2652 pages = "3908--3911",
2656 doi = "10.1103/PhysRevLett.78.3908",
2657 publisher = "American Physical Society",
2658 notes = "hyperdynamics, accelerated md",
2662 author = "Arthur F. Voter",
2664 title = "A method for accelerating the molecular dynamics
2665 simulation of infrequent events",
2668 journal = "J. Chem. Phys.",
2671 pages = "4665--4677",
2672 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2673 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2674 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2675 energy functions; surface diffusion; reaction kinetics
2676 theory; potential energy surfaces",
2677 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2678 doi = "10.1063/1.473503",
2679 notes = "improved hyperdynamics md",
2682 @Article{sorensen2000,
2683 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2685 title = "Temperature-accelerated dynamics for simulation of
2689 journal = "J. Chem. Phys.",
2692 pages = "9599--9606",
2693 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2694 MOLECULAR DYNAMICS METHOD; surface diffusion",
2695 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2696 doi = "10.1063/1.481576",
2697 notes = "temperature accelerated dynamics, tad",
2701 title = "Parallel replica method for dynamics of infrequent
2703 author = "Arthur F. Voter",
2704 journal = "Phys. Rev. B",
2707 pages = "R13985--R13988",
2711 doi = "10.1103/PhysRevB.57.R13985",
2712 publisher = "American Physical Society",
2713 notes = "parallel replica method, accelerated md",
2717 author = "Xiongwu Wu and Shaomeng Wang",
2719 title = "Enhancing systematic motion in molecular dynamics
2723 journal = "J. Chem. Phys.",
2726 pages = "9401--9410",
2727 keywords = "molecular dynamics method; argon; Lennard-Jones
2728 potential; crystallisation; liquid theory",
2729 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2730 doi = "10.1063/1.478948",
2731 notes = "self guided md, sgmd, accelerated md, enhancing
2735 @Article{choudhary05,
2736 author = "Devashish Choudhary and Paulette Clancy",
2738 title = "Application of accelerated molecular dynamics schemes
2739 to the production of amorphous silicon",
2742 journal = "J. Chem. Phys.",
2748 keywords = "molecular dynamics method; silicon; glass structure;
2749 amorphous semiconductors",
2750 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2751 doi = "10.1063/1.1878733",
2752 notes = "explanation of sgmd and hyper md, applied to amorphous
2757 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2759 title = "Carbon precipitation in silicon: Why is it so
2763 journal = "Appl. Phys. Lett.",
2766 pages = "3336--3338",
2767 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2768 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2770 URL = "http://link.aip.org/link/?APL/62/3336/1",
2771 doi = "10.1063/1.109063",
2772 notes = "interfacial energy of cubic sic and si, si self
2773 interstitials necessary for precipitation, volume
2774 decrease, high interface energy",
2777 @Article{chaussende08,
2778 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2779 journal = "J. Cryst. Growth",
2784 note = "Proceedings of the E-MRS Conference, Symposium G -
2785 Substrates of Wide Bandgap Materials",
2787 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2788 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2789 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2790 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2791 and A. Andreadou and E. K. Polychroniadis and C.
2792 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2793 notes = "3c-sic crystal growth, sic fabrication + links,
2797 @Article{chaussende07,
2798 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2799 title = "Status of Si{C} bulk growth processes",
2800 journal = "Journal of Physics D: Applied Physics",
2804 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2806 notes = "review of sic single crystal growth methods, process
2811 title = "Forces in Molecules",
2812 author = "R. P. Feynman",
2813 journal = "Phys. Rev.",
2820 doi = "10.1103/PhysRev.56.340",
2821 publisher = "American Physical Society",
2822 notes = "hellmann feynman forces",
2826 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2827 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2828 their Contrasting Properties",
2829 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2831 journal = "Phys. Rev. Lett.",
2838 doi = "10.1103/PhysRevLett.84.943",
2839 publisher = "American Physical Society",
2840 notes = "si sio2 and sic sio2 interface",
2843 @Article{djurabekova08,
2844 title = "Atomistic simulation of the interface structure of Si
2845 nanocrystals embedded in amorphous silica",
2846 author = "Flyura Djurabekova and Kai Nordlund",
2847 journal = "Phys. Rev. B",
2854 doi = "10.1103/PhysRevB.77.115325",
2855 publisher = "American Physical Society",
2856 notes = "nc-si in sio2, interface energy, nc construction,
2857 angular distribution, coordination",
2861 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2862 W. Liang and J. Zou",
2864 title = "Nature of interfacial defects and their roles in
2865 strain relaxation at highly lattice mismatched
2866 3{C}-Si{C}/Si (001) interface",
2869 journal = "J. Appl. Phys.",
2875 keywords = "anelastic relaxation; crystal structure; dislocations;
2876 elemental semiconductors; semiconductor growth;
2877 semiconductor thin films; silicon; silicon compounds;
2878 stacking faults; wide band gap semiconductors",
2879 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2880 doi = "10.1063/1.3234380",
2881 notes = "sic/si interface, follow refs, tem image
2882 deconvolution, dislocation defects",
2885 @Article{kitabatake93,
2886 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2889 title = "Simulations and experiments of Si{C} heteroepitaxial
2890 growth on Si(001) surface",
2893 journal = "J. Appl. Phys.",
2896 pages = "4438--4445",
2897 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2898 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2899 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2900 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2901 doi = "10.1063/1.354385",
2902 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2906 @Article{kitabatake97,
2907 author = "Makoto Kitabatake",
2908 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2909 Heteroepitaxial Growth",
2910 publisher = "WILEY-VCH Verlag",
2912 journal = "physica status solidi (b)",
2915 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2916 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2917 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2921 title = "Strain relaxation and thermal stability of the
2922 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2924 journal = "Thin Solid Films",
2931 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2932 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2933 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2934 keywords = "Strain relaxation",
2935 keywords = "Interfaces",
2936 keywords = "Thermal stability",
2937 keywords = "Molecular dynamics",
2938 notes = "tersoff sic/si interface study",
2942 title = "Ab initio Study of Misfit Dislocations at the
2943 $Si{C}/Si(001)$ Interface",
2944 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2946 journal = "Phys. Rev. Lett.",
2953 doi = "10.1103/PhysRevLett.89.156101",
2954 publisher = "American Physical Society",
2955 notes = "sic/si interface study",
2958 @Article{pizzagalli03,
2959 title = "Theoretical investigations of a highly mismatched
2960 interface: Si{C}/Si(001)",
2961 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2963 journal = "Phys. Rev. B",
2970 doi = "10.1103/PhysRevB.68.195302",
2971 publisher = "American Physical Society",
2972 notes = "tersoff md and ab initio sic/si interface study",
2976 title = "Atomic configurations of dislocation core and twin
2977 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2978 electron microscopy",
2979 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2980 H. Zheng and J. W. Liang",
2981 journal = "Phys. Rev. B",
2988 doi = "10.1103/PhysRevB.75.184103",
2989 publisher = "American Physical Society",
2990 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2994 @Article{hornstra58,
2995 title = "Dislocations in the diamond lattice",
2996 journal = "Journal of Physics and Chemistry of Solids",
3003 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3004 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3005 author = "J. Hornstra",
3006 notes = "dislocations in diamond lattice",
3010 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3011 Ion `Hot' Implantation",
3012 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3013 Hirao and Naoki Arai and Tomio Izumi",
3014 journal = "Japanese J. Appl. Phys.",
3016 number = "Part 1, No. 2A",
3020 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3021 doi = "10.1143/JJAP.31.343",
3022 publisher = "The Japan Society of Applied Physics",
3023 notes = "c-c bonds in c implanted si, hot implantation
3024 efficiency, c-c hard to break by thermal annealing",
3027 @Article{eichhorn99,
3028 author = "F. Eichhorn and N. Schell and W. Matz and R.
3031 title = "Strain and Si{C} particle formation in silicon
3032 implanted with carbon ions of medium fluence studied by
3033 synchrotron x-ray diffraction",
3036 journal = "J. Appl. Phys.",
3039 pages = "4184--4187",
3040 keywords = "silicon; carbon; elemental semiconductors; chemical
3041 interdiffusion; ion implantation; X-ray diffraction;
3042 precipitation; semiconductor doping",
3043 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3044 doi = "10.1063/1.371344",
3045 notes = "sic conversion by ibs, detected substitutional carbon,
3046 expansion of si lattice",
3049 @Article{eichhorn02,
3050 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3051 Metzger and W. Matz and R. K{\"{o}}gler",
3053 title = "Structural relation between Si and Si{C} formed by
3054 carbon ion implantation",
3057 journal = "J. Appl. Phys.",
3060 pages = "1287--1292",
3061 keywords = "silicon compounds; wide band gap semiconductors; ion
3062 implantation; annealing; X-ray scattering; transmission
3063 electron microscopy",
3064 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3065 doi = "10.1063/1.1428105",
3066 notes = "3c-sic alignement to si host in ibs depending on
3067 temperature, might explain c into c sub trafo",
3071 author = "G Lucas and M Bertolus and L Pizzagalli",
3072 title = "An environment-dependent interatomic potential for
3073 silicon carbide: calculation of bulk properties,
3074 high-pressure phases, point and extended defects, and
3075 amorphous structures",
3076 journal = "J. Phys.: Condens. Matter",
3080 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3086 author = "J Godet and L Pizzagalli and S Brochard and P
3088 title = "Comparison between classical potentials and ab initio
3089 methods for silicon under large shear",
3090 journal = "J. Phys.: Condens. Matter",
3094 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3096 notes = "comparison of empirical potentials, stillinger weber,
3097 edip, tersoff, ab initio",
3100 @Article{moriguchi98,
3101 title = "Verification of Tersoff's Potential for Static
3102 Structural Analysis of Solids of Group-{IV} Elements",
3103 author = "Koji Moriguchi and Akira Shintani",
3104 journal = "Japanese J. Appl. Phys.",
3106 number = "Part 1, No. 2",
3110 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3111 doi = "10.1143/JJAP.37.414",
3112 publisher = "The Japan Society of Applied Physics",
3113 notes = "tersoff stringent test",
3116 @Article{mazzarolo01,
3117 title = "Low-energy recoils in crystalline silicon: Quantum
3119 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3120 Lulli and Eros Albertazzi",
3121 journal = "Phys. Rev. B",
3128 doi = "10.1103/PhysRevB.63.195207",
3129 publisher = "American Physical Society",
3132 @Article{holmstroem08,
3133 title = "Threshold defect production in silicon determined by
3134 density functional theory molecular dynamics
3136 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3137 journal = "Phys. Rev. B",
3144 doi = "10.1103/PhysRevB.78.045202",
3145 publisher = "American Physical Society",
3146 notes = "threshold displacement comparison empirical and ab
3150 @Article{nordlund97,
3151 title = "Repulsive interatomic potentials calculated using
3152 Hartree-Fock and density-functional theory methods",
3153 journal = "Nucl. Instrum. Methods Phys. Res. B",
3160 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3161 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3162 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3163 notes = "repulsive ab initio potential",
3167 title = "Efficiency of ab-initio total energy calculations for
3168 metals and semiconductors using a plane-wave basis
3170 journal = "Comput. Mater. Sci.",
3177 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3178 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3179 author = "G. Kresse and J. Furthm{\"{u}}ller",
3184 title = "Projector augmented-wave method",
3185 author = "P. E. Bl{\"o}chl",
3186 journal = "Phys. Rev. B",
3189 pages = "17953--17979",
3193 doi = "10.1103/PhysRevB.50.17953",
3194 publisher = "American Physical Society",
3195 notes = "paw method",
3199 title = "Norm-Conserving Pseudopotentials",
3200 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3201 journal = "Phys. Rev. Lett.",
3204 pages = "1494--1497",
3208 doi = "10.1103/PhysRevLett.43.1494",
3209 publisher = "American Physical Society",
3210 notes = "norm-conserving pseudopotentials",
3213 @Article{vanderbilt90,
3214 title = "Soft self-consistent pseudopotentials in a generalized
3215 eigenvalue formalism",
3216 author = "David Vanderbilt",
3217 journal = "Phys. Rev. B",
3220 pages = "7892--7895",
3224 doi = "10.1103/PhysRevB.41.7892",
3225 publisher = "American Physical Society",
3226 notes = "vasp pseudopotentials",
3230 title = "Accurate and simple density functional for the
3231 electronic exchange energy: Generalized gradient
3233 author = "John P. Perdew and Yue Wang",
3234 journal = "Phys. Rev. B",
3237 pages = "8800--8802",
3241 doi = "10.1103/PhysRevB.33.8800",
3242 publisher = "American Physical Society",
3243 notes = "rapid communication gga",
3247 title = "Generalized gradient approximations for exchange and
3248 correlation: {A} look backward and forward",
3249 journal = "Physica B: Condensed Matter",
3256 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3257 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3258 author = "John P. Perdew",
3259 notes = "gga overview",
3263 title = "Atoms, molecules, solids, and surfaces: Applications
3264 of the generalized gradient approximation for exchange
3266 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3267 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3268 and Carlos Fiolhais",
3269 journal = "Phys. Rev. B",
3272 pages = "6671--6687",
3276 doi = "10.1103/PhysRevB.46.6671",
3277 publisher = "American Physical Society",
3278 notes = "gga pw91 (as in vasp)",
3281 @Article{baldereschi73,
3282 title = "Mean-Value Point in the Brillouin Zone",
3283 author = "A. Baldereschi",
3284 journal = "Phys. Rev. B",
3287 pages = "5212--5215",
3291 doi = "10.1103/PhysRevB.7.5212",
3292 publisher = "American Physical Society",
3293 notes = "mean value k point",
3297 title = "Ab initio pseudopotential calculations of dopant
3299 journal = "Comput. Mater. Sci.",
3306 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3307 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3308 author = "Jing Zhu",
3309 keywords = "TED (transient enhanced diffusion)",
3310 keywords = "Boron dopant",
3311 keywords = "Carbon dopant",
3312 keywords = "Defect",
3313 keywords = "ab initio pseudopotential method",
3314 keywords = "Impurity cluster",
3315 notes = "binding of c to si interstitial, c in si defects",
3319 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3321 title = "Si{C} buried layer formation by ion beam synthesis at
3325 journal = "Appl. Phys. Lett.",
3328 pages = "2646--2648",
3329 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3330 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3331 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3332 ELECTRON MICROSCOPY",
3333 URL = "http://link.aip.org/link/?APL/66/2646/1",
3334 doi = "10.1063/1.113112",
3335 notes = "precipitation mechanism by substitutional carbon, si
3336 self interstitials react with further implanted c",
3340 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3341 Kolodzey and A. Hairie",
3343 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3347 journal = "J. Appl. Phys.",
3350 pages = "4631--4633",
3351 keywords = "silicon compounds; precipitation; localised modes;
3352 semiconductor epitaxial layers; infrared spectra;
3353 Fourier transform spectra; thermal stability;
3355 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3356 doi = "10.1063/1.368703",
3357 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3361 author = "R Jones and B J Coomer and P R Briddon",
3362 title = "Quantum mechanical modelling of defects in
3364 journal = "J. Phys.: Condens. Matter",
3368 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3370 notes = "ab inito dft intro, vibrational modes, c defect in
3375 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3376 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3377 J. E. Greene and S. G. Bishop",
3379 title = "Carbon incorporation pathways and lattice sites in
3380 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3381 molecular-beam epitaxy",
3384 journal = "J. Appl. Phys.",
3387 pages = "5716--5727",
3388 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3389 doi = "10.1063/1.1465122",
3390 notes = "c substitutional incorporation pathway, dft and expt",
3394 title = "Dynamic properties of interstitial carbon and
3395 carbon-carbon pair defects in silicon",
3396 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3398 journal = "Phys. Rev. B",
3401 pages = "2188--2194",
3405 doi = "10.1103/PhysRevB.55.2188",
3406 publisher = "American Physical Society",
3407 notes = "ab initio c in si and di-carbon defect, no formation
3408 energies, different migration barriers and paths",
3412 title = "Interstitial carbon and the carbon-carbon pair in
3413 silicon: Semiempirical electronic-structure
3415 author = "Matthew J. Burnard and Gary G. DeLeo",
3416 journal = "Phys. Rev. B",
3419 pages = "10217--10225",
3423 doi = "10.1103/PhysRevB.47.10217",
3424 publisher = "American Physical Society",
3425 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3426 carbon defect, formation energies",
3430 title = "Electronic structure of interstitial carbon in
3432 author = "Morgan Besson and Gary G. DeLeo",
3433 journal = "Phys. Rev. B",
3436 pages = "4028--4033",
3440 doi = "10.1103/PhysRevB.43.4028",
3441 publisher = "American Physical Society",
3445 title = "Review of atomistic simulations of surface diffusion
3446 and growth on semiconductors",
3447 journal = "Comput. Mater. Sci.",
3452 note = "Proceedings of the Workshop on Virtual Molecular Beam
3455 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3456 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3457 author = "Efthimios Kaxiras",
3458 notes = "might contain c 100 db formation energy, overview md,
3459 tight binding, first principles",
3462 @Article{kaukonen98,
3463 title = "Effect of {N} and {B} doping on the growth of {CVD}
3465 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3467 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3468 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3470 journal = "Phys. Rev. B",
3473 pages = "9965--9970",
3477 doi = "10.1103/PhysRevB.57.9965",
3478 publisher = "American Physical Society",
3479 notes = "constrained conjugate gradient relaxation technique
3484 title = "Correlation between the antisite pair and the ${DI}$
3486 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3487 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3489 journal = "Phys. Rev. B",
3496 doi = "10.1103/PhysRevB.67.155203",
3497 publisher = "American Physical Society",
3501 title = "Production and recovery of defects in Si{C} after
3502 irradiation and deformation",
3503 journal = "J. Nucl. Mater.",
3506 pages = "1803--1808",
3510 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3511 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3512 author = "J. Chen and P. Jung and H. Klein",
3516 title = "Accumulation, dynamic annealing and thermal recovery
3517 of ion-beam-induced disorder in silicon carbide",
3518 journal = "Nucl. Instrum. Methods Phys. Res. B",
3525 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3526 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3527 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3530 @Article{bockstedte03,
3531 title = "Ab initio study of the migration of intrinsic defects
3533 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3535 journal = "Phys. Rev. B",
3542 doi = "10.1103/PhysRevB.68.205201",
3543 publisher = "American Physical Society",
3544 notes = "defect migration in sic",
3548 title = "Theoretical study of vacancy diffusion and
3549 vacancy-assisted clustering of antisites in Si{C}",
3550 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3552 journal = "Phys. Rev. B",
3559 doi = "10.1103/PhysRevB.68.155208",
3560 publisher = "American Physical Society",
3564 journal = "Telegrafiya i Telefoniya bez Provodov",
3568 author = "O. V. Lossev",
3572 title = "Luminous carborundum detector and detection effect and
3573 oscillations with crystals",
3574 journal = "Philosophical Magazine Series 7",
3577 pages = "1024--1044",
3579 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3580 author = "O. V. Lossev",
3584 journal = "Physik. Zeitschr.",
3588 author = "O. V. Lossev",
3592 journal = "Physik. Zeitschr.",
3596 author = "O. V. Lossev",
3600 journal = "Physik. Zeitschr.",
3604 author = "O. V. Lossev",
3608 title = "A note on carborundum",
3609 journal = "Electrical World",
3613 author = "H. J. Round",
3616 @Article{vashishath08,
3617 title = "Recent trends in silicon carbide device research",
3618 journal = "Mj. Int. J. Sci. Tech.",
3623 author = "Munish Vashishath and Ashoke K. Chatterjee",
3624 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3625 notes = "sic polytype electronic properties",
3629 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3631 title = "Growth and Properties of beta-Si{C} Single Crystals",
3634 journal = "Journal of Applied Physics",
3638 URL = "http://link.aip.org/link/?JAP/37/333/1",
3639 doi = "10.1063/1.1707837",
3640 notes = "sic melt growth",
3644 author = "A. E. van Arkel and J. H. de Boer",
3645 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3647 publisher = "WILEY-VCH Verlag GmbH",
3649 journal = "Z. Anorg. Chem.",
3652 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3653 doi = "10.1002/zaac.19251480133",
3654 notes = "van arkel apparatus",
3658 author = "K. Moers",
3660 journal = "Z. Anorg. Chem.",
3663 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3668 author = "J. T. Kendall",
3669 title = "Electronic Conduction in Silicon Carbide",
3672 journal = "The Journal of Chemical Physics",
3676 URL = "http://link.aip.org/link/?JCP/21/821/1",
3677 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3682 author = "J. A. Lely",
3684 journal = "Ber. Deut. Keram. Ges.",
3687 notes = "lely sublimation growth process",
3690 @Article{knippenberg63,
3691 author = "W. F. Knippenberg",
3693 journal = "Philips Res. Repts.",
3696 notes = "acheson process",
3699 @Article{hoffmann82,
3700 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3703 title = "Silicon carbide blue light emitting diodes with
3704 improved external quantum efficiency",
3707 journal = "Journal of Applied Physics",
3710 pages = "6962--6967",
3711 keywords = "light emitting diodes; silicon carbides; quantum
3712 efficiency; visible radiation; experimental data;
3713 epitaxy; fabrication; medium temperature; layers;
3714 aluminium; nitrogen; substrates; pn junctions;
3715 electroluminescence; spectra; current density;
3717 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3718 doi = "10.1063/1.330041",
3719 notes = "blue led, sublimation process",
3723 author = "Philip Neudeck",
3724 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3725 Road 44135 Cleveland OH",
3726 title = "Progress in silicon carbide semiconductor electronics
3728 journal = "Journal of Electronic Materials",
3729 publisher = "Springer Boston",
3731 keyword = "Chemistry and Materials Science",
3735 URL = "http://dx.doi.org/10.1007/BF02659688",
3736 note = "10.1007/BF02659688",
3738 notes = "sic data, advantages of 3c sic",
3741 @Article{bhatnagar93,
3742 author = "M. Bhatnagar and B. J. Baliga",
3743 journal = "Electron Devices, IEEE Transactions on",
3744 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3751 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3752 rectifiers;Si;SiC;breakdown voltages;drift region
3753 properties;output characteristics;power MOSFETs;power
3754 semiconductor devices;switching characteristics;thermal
3755 analysis;Schottky-barrier diodes;electric breakdown of
3756 solids;insulated gate field effect transistors;power
3757 transistors;semiconductor materials;silicon;silicon
3758 compounds;solid-state rectifiers;thermal analysis;",
3759 doi = "10.1109/16.199372",
3761 notes = "comparison 3c 6h sic and si devices",
3765 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3766 A. Powell and C. S. Salupo and L. G. Matus",
3767 journal = "Electron Devices, IEEE Transactions on",
3768 title = "Electrical properties of epitaxial 3{C}- and
3769 6{H}-Si{C} p-n junction diodes produced side-by-side on
3770 6{H}-Si{C} substrates",
3776 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3777 C;6H-SiC layers;6H-SiC substrates;CVD
3778 process;SiC;chemical vapor deposition;doping;electrical
3779 properties;epitaxial layers;light
3780 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3781 diodes;polytype;rectification characteristics;reverse
3782 leakage current;reverse voltages;temperature;leakage
3783 currents;power electronics;semiconductor
3784 diodes;semiconductor epitaxial layers;semiconductor
3785 growth;semiconductor materials;silicon
3786 compounds;solid-state rectifiers;substrates;vapour
3787 phase epitaxial growth;",
3788 doi = "10.1109/16.285038",
3790 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3795 author = "N. Schulze and D. L. Barrett and G. Pensl",
3797 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3798 single crystals by physical vapor transport",
3801 journal = "Applied Physics Letters",
3804 pages = "1632--1634",
3805 keywords = "silicon compounds; semiconductor materials;
3806 semiconductor growth; crystal growth from vapour;
3807 photoluminescence; Hall mobility",
3808 URL = "http://link.aip.org/link/?APL/72/1632/1",
3809 doi = "10.1063/1.121136",
3810 notes = "micropipe free 6h-sic pvt growth",
3814 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3816 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3819 journal = "Applied Physics Letters",
3823 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3824 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3825 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3826 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3828 URL = "http://link.aip.org/link/?APL/50/221/1",
3829 doi = "10.1063/1.97667",
3830 notes = "apb 3c-sic heteroepitaxy on si",
3833 @Article{shibahara86,
3834 title = "Surface morphology of cubic Si{C}(100) grown on
3835 Si(100) by chemical vapor deposition",
3836 journal = "Journal of Crystal Growth",
3843 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3844 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3845 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3847 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3850 @Article{desjardins96,
3851 author = "P. Desjardins and J. E. Greene",
3853 title = "Step-flow epitaxial growth on two-domain surfaces",
3856 journal = "Journal of Applied Physics",
3859 pages = "1423--1434",
3860 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3861 FILM GROWTH; SURFACE STRUCTURE",
3862 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3863 doi = "10.1063/1.360980",
3864 notes = "apb model",
3868 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3870 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3871 carbonization of silicon",
3874 journal = "Journal of Applied Physics",
3877 pages = "2070--2073",
3878 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3879 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3881 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3882 doi = "10.1063/1.360184",
3883 notes = "ssmbe of sic on si, lower temperatures",
3887 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3888 {MBE} using surface superstructure",
3889 journal = "Journal of Crystal Growth",
3896 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3897 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3898 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3899 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3900 notes = "gas source mbe of 3c-sic on 6h-sic",
3903 @Article{yoshinobu92,
3904 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3905 and Takashi Fuyuki and Hiroyuki Matsunami",
3907 title = "Lattice-matched epitaxial growth of single crystalline
3908 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3909 molecular beam epitaxy",
3912 journal = "Applied Physics Letters",
3916 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3917 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3918 INTERFACE STRUCTURE",
3919 URL = "http://link.aip.org/link/?APL/60/824/1",
3920 doi = "10.1063/1.107430",
3921 notes = "gas source mbe of 3c-sic on 6h-sic",
3924 @Article{yoshinobu90,
3925 title = "Atomic level control in gas source {MBE} growth of
3927 journal = "Journal of Crystal Growth",
3934 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3935 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3936 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3937 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3938 notes = "gas source mbe of 3c-sic on 3c-sic",
3942 title = "Atomic layer epitaxy controlled by surface
3943 superstructures in Si{C}",
3944 journal = "Thin Solid Films",
3951 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3952 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3953 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3955 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3960 title = "Microscopic mechanisms of accurate layer-by-layer
3961 growth of [beta]-Si{C}",
3962 journal = "Thin Solid Films",
3969 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3970 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3971 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3972 and S. Misawa and E. Sakuma and S. Yoshida",
3973 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3978 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3980 title = "Effects of gas flow ratio on silicon carbide thin film
3981 growth mode and polytype formation during gas-source
3982 molecular beam epitaxy",
3985 journal = "Applied Physics Letters",
3988 pages = "2851--2853",
3989 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3990 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3991 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3993 URL = "http://link.aip.org/link/?APL/65/2851/1",
3994 doi = "10.1063/1.112513",
3995 notes = "gas source mbe of 6h-sic on 6h-sic",
3999 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4000 title = "Heterointerface Control and Epitaxial Growth of
4001 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4002 publisher = "WILEY-VCH Verlag",
4004 journal = "physica status solidi (b)",
4007 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4012 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4013 journal = "Journal of Crystal Growth",
4020 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4021 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4022 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4023 keywords = "Reflection high-energy electron diffraction (RHEED)",
4024 keywords = "Scanning electron microscopy (SEM)",
4025 keywords = "Silicon carbide",
4026 keywords = "Silicon",
4027 keywords = "Island growth",
4028 notes = "lower temperature, 550-700",
4031 @Article{hatayama95,
4032 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4033 on Si using hydrocarbon radicals by gas source
4034 molecular beam epitaxy",
4035 journal = "Journal of Crystal Growth",
4042 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4043 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4044 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4045 and Hiroyuki Matsunami",
4049 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4050 title = "The Preference of Silicon Carbide for Growth in the
4051 Metastable Cubic Form",
4052 journal = "Journal of the American Ceramic Society",
4055 publisher = "Blackwell Publishing Ltd",
4057 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4058 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4059 pages = "2630--2633",
4060 keywords = "silicon carbide, crystal growth, crystal structure,
4061 calculations, stability",
4063 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4064 polytype dft calculation refs",
4067 @Article{allendorf91,
4068 title = "The adsorption of {H}-atoms on polycrystalline
4069 [beta]-silicon carbide",
4070 journal = "Surface Science",
4077 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4078 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4079 author = "Mark D. Allendorf and Duane A. Outka",
4080 notes = "h adsorption on 3c-sic",
4083 @Article{eaglesham93,
4084 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4085 D. P. Adams and S. M. Yalisove",
4087 title = "Effect of {H} on Si molecular-beam epitaxy",
4090 journal = "Journal of Applied Physics",
4093 pages = "6615--6618",
4094 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4095 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4096 DIFFUSION; ADSORPTION",
4097 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4098 doi = "10.1063/1.355101",
4099 notes = "h incorporation on si surface, lower surface
4104 author = "Ronald C. Newman",
4105 title = "Carbon in Crystalline Silicon",
4106 journal = "MRS Online Proceedings Library",
4111 doi = "10.1557/PROC-59-403",
4112 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4113 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4117 author = "U. Gösele",
4118 title = "The Role of Carbon and Point Defects in Silicon",
4119 journal = "MRS Online Proceedings Library",
4124 doi = "10.1557/PROC-59-419",
4125 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4126 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4130 title = "Convergence of supercell calculations for point
4131 defects in semiconductors: Vacancy in silicon",
4132 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4134 journal = "Phys. Rev. B",
4137 pages = "1318--1325",
4141 doi = "10.1103/PhysRevB.58.1318",
4142 publisher = "American Physical Society",
4143 notes = "convergence k point supercell size, vacancy in
4148 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4149 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4150 K{\"{o}}gler and W. Skorupa",
4152 title = "Spectroscopic characterization of phases formed by
4153 high-dose carbon ion implantation in silicon",
4156 journal = "Journal of Applied Physics",
4159 pages = "2978--2984",
4160 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4161 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4162 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4163 DEPENDENCE; PRECIPITATES; ANNEALING",
4164 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4165 doi = "10.1063/1.358714",