2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
122 notes = "dual implantation, sic prec enhanced by vacancies,
123 precipitation by interstitial and substitutional
124 carbon, both mechanisms explained + refs",
128 title = "Carbon-mediated effects in silicon and in
129 silicon-related materials",
130 journal = "Materials Chemistry and Physics",
137 doi = "DOI: 10.1016/0254-0584(95)01673-I",
138 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
139 author = "W. Skorupa and R. A. Yankov",
140 notes = "review of silicon carbon compound",
144 author = "P. S. de Laplace",
145 title = "Th\'eorie analytique des probabilit\'es",
146 series = "Oeuvres Compl\`etes de Laplace",
148 publisher = "Gauthier-Villars",
152 @Article{mattoni2007,
153 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
154 title = "{Atomistic modeling of brittleness in covalent
156 journal = "Phys. Rev. B",
162 doi = "10.1103/PhysRevB.76.224103",
163 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
164 longe(r)-range-interactions, brittle propagation of
165 fracture, more available potentials, universal energy
166 relation (uer), minimum range model (mrm)",
170 title = "Comparative study of silicon empirical interatomic
172 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
173 journal = "Phys. Rev. B",
176 pages = "2250--2279",
180 doi = "10.1103/PhysRevB.46.2250",
181 publisher = "American Physical Society",
182 notes = "comparison of classical potentials for si",
186 title = "Stress relaxation in $a-Si$ induced by ion
188 author = "H. M. Urbassek M. Koster",
189 journal = "Phys. Rev. B",
192 pages = "11219--11224",
196 doi = "10.1103/PhysRevB.62.11219",
197 publisher = "American Physical Society",
198 notes = "virial derivation for 3-body tersoff potential",
201 @Article{breadmore99,
202 title = "Direct simulation of ion-beam-induced stressing and
203 amorphization of silicon",
204 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
205 journal = "Phys. Rev. B",
208 pages = "12610--12616",
212 doi = "10.1103/PhysRevB.60.12610",
213 publisher = "American Physical Society",
214 notes = "virial derivation for 3-body tersoff potential",
218 title = "First-Principles Calculation of Stress",
219 author = "O. H. Nielsen and Richard M. Martin",
220 journal = "Phys. Rev. Lett.",
227 doi = "10.1103/PhysRevLett.50.697",
228 publisher = "American Physical Society",
229 notes = "generalization of virial theorem",
233 title = "Quantum-mechanical theory of stress and force",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. B",
238 pages = "3780--3791",
242 doi = "10.1103/PhysRevB.32.3780",
243 publisher = "American Physical Society",
244 notes = "dft virial stress and forces",
248 author = "Henri Moissan",
249 title = "Nouvelles recherches sur la météorité de Cañon
251 journal = "Comptes rendus de l'Académie des Sciences",
258 author = "Y. S. Park",
259 title = "Si{C} Materials and Devices",
260 publisher = "Academic Press",
261 address = "San Diego",
266 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
267 Calvin H. Carter Jr. and D. Asbury",
268 title = "Si{C} Seeded Boule Growth",
269 journal = "Materials Science Forum",
273 notes = "modified lely process, micropipes",
277 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
278 Thermodynamical Properties of Lennard-Jones Molecules",
279 author = "Loup Verlet",
280 journal = "Phys. Rev.",
286 doi = "10.1103/PhysRev.159.98",
287 publisher = "American Physical Society",
288 notes = "velocity verlet integration algorithm equation of
292 @Article{berendsen84,
293 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
294 Gunsteren and A. DiNola and J. R. Haak",
296 title = "Molecular dynamics with coupling to an external bath",
299 journal = "J. Chem. Phys.",
302 pages = "3684--3690",
303 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
304 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
305 URL = "http://link.aip.org/link/?JCP/81/3684/1",
306 doi = "10.1063/1.448118",
307 notes = "berendsen thermostat barostat",
311 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
313 title = "Molecular dynamics determination of defect energetics
314 in beta -Si{C} using three representative empirical
316 journal = "Modell. Simul. Mater. Sci. Eng.",
320 URL = "http://stacks.iop.org/0965-0393/3/615",
321 notes = "comparison of tersoff, pearson and eam for defect
322 energetics in sic; (m)eam parameters for sic",
327 title = "Relationship between the embedded-atom method and
329 author = "Donald W. Brenner",
330 journal = "Phys. Rev. Lett.",
337 doi = "10.1103/PhysRevLett.63.1022",
338 publisher = "American Physical Society",
339 notes = "relation of tersoff and eam potential",
343 title = "Molecular-dynamics study of self-interstitials in
345 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
346 journal = "Phys. Rev. B",
349 pages = "9552--9558",
353 doi = "10.1103/PhysRevB.35.9552",
354 publisher = "American Physical Society",
355 notes = "selft-interstitials in silicon, stillinger-weber,
356 calculation of defect formation energy, defect
361 title = "Extended interstitials in silicon and germanium",
362 author = "H. R. Schober",
363 journal = "Phys. Rev. B",
366 pages = "13013--13015",
370 doi = "10.1103/PhysRevB.39.13013",
371 publisher = "American Physical Society",
372 notes = "stillinger-weber silicon 110 stable and metastable
373 dumbbell configuration",
377 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
378 Defect accumulation, topological features, and
380 author = "F. Gao and W. J. Weber",
381 journal = "Phys. Rev. B",
388 doi = "10.1103/PhysRevB.66.024106",
389 publisher = "American Physical Society",
390 notes = "sic intro, si cascade in 3c-sic, amorphization,
391 tersoff modified, pair correlation of amorphous sic, md
395 @Article{devanathan98,
396 title = "Computer simulation of a 10 ke{V} Si displacement
398 journal = "Nucl. Instrum. Methods Phys. Res. B",
404 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
405 author = "R. Devanathan and W. J. Weber and T. Diaz de la
407 notes = "modified tersoff short range potential, ab initio
411 @Article{devanathan98_2,
412 title = "Displacement threshold energies in [beta]-Si{C}",
413 journal = "J. Nucl. Mater.",
419 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
420 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
422 notes = "modified tersoff, ab initio, combined ab initio
426 @Article{kitabatake00,
427 title = "Si{C}/Si heteroepitaxial growth",
428 author = "M. Kitabatake",
429 journal = "Thin Solid Films",
434 notes = "md simulation, sic si heteroepitaxy, mbe",
438 title = "Intrinsic point defects in crystalline silicon:
439 Tight-binding molecular dynamics studies of
440 self-diffusion, interstitial-vacancy recombination, and
442 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
444 journal = "Phys. Rev. B",
447 pages = "14279--14289",
451 doi = "10.1103/PhysRevB.55.14279",
452 publisher = "American Physical Society",
453 notes = "si self interstitial, diffusion, tbmd",
457 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
460 title = "A kinetic Monte--Carlo study of the effective
461 diffusivity of the silicon self-interstitial in the
462 presence of carbon and boron",
465 journal = "J. Appl. Phys.",
468 pages = "1963--1967",
469 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
470 CARBON ADDITIONS; BORON ADDITIONS; elemental
471 semiconductors; self-diffusion",
472 URL = "http://link.aip.org/link/?JAP/84/1963/1",
473 doi = "10.1063/1.368328",
474 notes = "kinetic monte carlo of si self interstitial
479 title = "Barrier to Migration of the Silicon
481 author = "Y. Bar-Yam and J. D. Joannopoulos",
482 journal = "Phys. Rev. Lett.",
485 pages = "1129--1132",
489 doi = "10.1103/PhysRevLett.52.1129",
490 publisher = "American Physical Society",
491 notes = "si self-interstitial migration barrier",
494 @Article{bar-yam84_2,
495 title = "Electronic structure and total-energy migration
496 barriers of silicon self-interstitials",
497 author = "Y. Bar-Yam and J. D. Joannopoulos",
498 journal = "Phys. Rev. B",
501 pages = "1844--1852",
505 doi = "10.1103/PhysRevB.30.1844",
506 publisher = "American Physical Society",
510 title = "First-principles calculations of self-diffusion
511 constants in silicon",
512 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
513 and D. B. Laks and W. Andreoni and S. T. Pantelides",
514 journal = "Phys. Rev. Lett.",
517 pages = "2435--2438",
521 doi = "10.1103/PhysRevLett.70.2435",
522 publisher = "American Physical Society",
523 notes = "si self int diffusion by ab initio md, formation
524 entropy calculations",
528 title = "Tight-binding theory of native point defects in
530 author = "L. Colombo",
531 journal = "Annu. Rev. Mater. Res.",
536 doi = "10.1146/annurev.matsci.32.111601.103036",
537 publisher = "Annual Reviews",
538 notes = "si self interstitial, tbmd, virial stress",
541 @Article{al-mushadani03,
542 title = "Free-energy calculations of intrinsic point defects in
544 author = "O. K. Al-Mushadani and R. J. Needs",
545 journal = "Phys. Rev. B",
552 doi = "10.1103/PhysRevB.68.235205",
553 publisher = "American Physical Society",
554 notes = "formation energies of intrinisc point defects in
555 silicon, si self interstitials, free energy",
558 @Article{goedecker02,
559 title = "A Fourfold Coordinated Point Defect in Silicon",
560 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
561 journal = "Phys. Rev. Lett.",
568 doi = "10.1103/PhysRevLett.88.235501",
569 publisher = "American Physical Society",
570 notes = "first time ffcd, fourfold coordinated point defect in
575 title = "Ab initio molecular dynamics simulation of
576 self-interstitial diffusion in silicon",
577 author = "Beat Sahli and Wolfgang Fichtner",
578 journal = "Phys. Rev. B",
585 doi = "10.1103/PhysRevB.72.245210",
586 publisher = "American Physical Society",
587 notes = "si self int, diffusion, barrier height, voronoi
592 title = "Ab initio calculations of the interaction between
593 native point defects in silicon",
594 journal = "Mater. Sci. Eng., B",
599 note = "EMRS 2005, Symposium D - Materials Science and Device
600 Issues for Future Technologies",
602 doi = "DOI: 10.1016/j.mseb.2005.08.072",
603 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
604 author = "G. Hobler and G. Kresse",
605 notes = "vasp intrinsic si defect interaction study, capture
610 title = "Ab initio study of self-diffusion in silicon over a
611 wide temperature range: Point defect states and
612 migration mechanisms",
613 author = "Shangyi Ma and Shaoqing Wang",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.81.193203",
622 publisher = "American Physical Society",
623 notes = "si self interstitial diffusion + refs",
627 title = "Atomistic simulations on the thermal stability of the
628 antisite pair in 3{C}- and 4{H}-Si{C}",
629 author = "M. Posselt and F. Gao and W. J. Weber",
630 journal = "Phys. Rev. B",
637 doi = "10.1103/PhysRevB.73.125206",
638 publisher = "American Physical Society",
642 title = "Correlation between self-diffusion in Si and the
643 migration mechanisms of vacancies and
644 self-interstitials: An atomistic study",
645 author = "M. Posselt and F. Gao and H. Bracht",
646 journal = "Phys. Rev. B",
653 doi = "10.1103/PhysRevB.78.035208",
654 publisher = "American Physical Society",
655 notes = "si self-interstitial and vacancy diffusion, stillinger
660 title = "Ab initio and empirical-potential studies of defect
661 properties in $3{C}-Si{C}$",
662 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
664 journal = "Phys. Rev. B",
671 doi = "10.1103/PhysRevB.64.245208",
672 publisher = "American Physical Society",
673 notes = "defects in 3c-sic",
677 title = "Empirical potential approach for defect properties in
679 journal = "Nucl. Instrum. Methods Phys. Res. B",
686 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
687 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
688 author = "Fei Gao and William J. Weber",
689 keywords = "Empirical potential",
690 keywords = "Defect properties",
691 keywords = "Silicon carbide",
692 keywords = "Computer simulation",
693 notes = "sic potential, brenner type, like erhart/albe",
697 title = "Atomistic study of intrinsic defect migration in
699 author = "Fei Gao and William J. Weber and M. Posselt and V.
701 journal = "Phys. Rev. B",
708 doi = "10.1103/PhysRevB.69.245205",
709 publisher = "American Physical Society",
710 notes = "defect migration in sic",
714 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
717 title = "Ab Initio atomic simulations of antisite pair recovery
718 in cubic silicon carbide",
721 journal = "Appl. Phys. Lett.",
727 keywords = "ab initio calculations; silicon compounds; antisite
728 defects; wide band gap semiconductors; molecular
729 dynamics method; density functional theory;
730 electron-hole recombination; photoluminescence;
731 impurities; diffusion",
732 URL = "http://link.aip.org/link/?APL/90/221915/1",
733 doi = "10.1063/1.2743751",
736 @Article{mattoni2002,
737 title = "Self-interstitial trapping by carbon complexes in
738 crystalline silicon",
739 author = "A. Mattoni and F. Bernardini and L. Colombo",
740 journal = "Phys. Rev. B",
747 doi = "10.1103/PhysRevB.66.195214",
748 publisher = "American Physical Society",
749 notes = "c in c-si, diffusion, interstitial configuration +
750 links, interaction of carbon and silicon interstitials,
751 tersoff suitability",
755 title = "Calculations of Silicon Self-Interstitial Defects",
756 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
758 journal = "Phys. Rev. Lett.",
761 pages = "2351--2354",
765 doi = "10.1103/PhysRevLett.83.2351",
766 publisher = "American Physical Society",
767 notes = "nice images of the defects, si defect overview +
772 title = "Identification of the migration path of interstitial
774 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
775 journal = "Phys. Rev. B",
778 pages = "7439--7442",
782 doi = "10.1103/PhysRevB.50.7439",
783 publisher = "American Physical Society",
784 notes = "carbon interstitial migration path shown, 001 c-si
789 title = "Theory of carbon-carbon pairs in silicon",
790 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
791 journal = "Phys. Rev. B",
794 pages = "9845--9850",
798 doi = "10.1103/PhysRevB.58.9845",
799 publisher = "American Physical Society",
800 notes = "c_i c_s pair configuration, theoretical results",
804 title = "Bistable interstitial-carbon--substitutional-carbon
806 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
808 journal = "Phys. Rev. B",
811 pages = "5765--5783",
815 doi = "10.1103/PhysRevB.42.5765",
816 publisher = "American Physical Society",
817 notes = "c_i c_s pair configuration, experimental results",
821 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
822 Shifeng Lu and Xiang-Yang Liu",
824 title = "Ab initio modeling and experimental study of {C}--{B}
828 journal = "Appl. Phys. Lett.",
832 keywords = "silicon; boron; carbon; elemental semiconductors;
833 impurity-defect interactions; ab initio calculations;
834 secondary ion mass spectra; diffusion; interstitials",
835 URL = "http://link.aip.org/link/?APL/80/52/1",
836 doi = "10.1063/1.1430505",
837 notes = "c-c 100 split, lower as a and b states of capaz",
841 title = "Ab initio investigation of carbon-related defects in
843 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
845 journal = "Phys. Rev. B",
848 pages = "12554--12557",
852 doi = "10.1103/PhysRevB.47.12554",
853 publisher = "American Physical Society",
854 notes = "c interstitials in crystalline silicon",
858 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
860 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
861 Sokrates T. Pantelides",
862 journal = "Phys. Rev. Lett.",
865 pages = "1814--1817",
869 doi = "10.1103/PhysRevLett.52.1814",
870 publisher = "American Physical Society",
871 notes = "microscopic theory diffusion silicon dft migration
876 title = "Unified Approach for Molecular Dynamics and
877 Density-Functional Theory",
878 author = "R. Car and M. Parrinello",
879 journal = "Phys. Rev. Lett.",
882 pages = "2471--2474",
886 doi = "10.1103/PhysRevLett.55.2471",
887 publisher = "American Physical Society",
888 notes = "car parrinello method, dft and md",
892 title = "Short-range order, bulk moduli, and physical trends in
893 c-$Si1-x$$Cx$ alloys",
894 author = "P. C. Kelires",
895 journal = "Phys. Rev. B",
898 pages = "8784--8787",
902 doi = "10.1103/PhysRevB.55.8784",
903 publisher = "American Physical Society",
904 notes = "c strained si, montecarlo md, bulk moduli, next
909 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
910 Application to the $Si1-x-yGexCy$ System",
911 author = "P. C. Kelires",
912 journal = "Phys. Rev. Lett.",
915 pages = "1114--1117",
919 doi = "10.1103/PhysRevLett.75.1114",
920 publisher = "American Physical Society",
921 notes = "mc md, strain compensation in si ge by c insertion",
925 title = "Low temperature electron irradiation of silicon
927 journal = "Solid State Communications",
934 doi = "DOI: 10.1016/0038-1098(70)90074-8",
935 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
936 author = "A. R. Bean and R. C. Newman",
940 author = "F. Durand and J. Duby",
941 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
942 title = "Carbon solubility in solid and liquid silicon—{A}
943 review with reference to eutectic equilibrium",
944 journal = "Journal of Phase Equilibria",
945 publisher = "Springer New York",
947 keyword = "Chemistry and Materials Science",
951 URL = "http://dx.doi.org/10.1361/105497199770335956",
952 note = "10.1361/105497199770335956",
954 notes = "better c solubility limit in silicon",
958 title = "{EPR} Observation of the Isolated Interstitial Carbon
960 author = "G. D. Watkins and K. L. Brower",
961 journal = "Phys. Rev. Lett.",
964 pages = "1329--1332",
968 doi = "10.1103/PhysRevLett.36.1329",
969 publisher = "American Physical Society",
970 notes = "epr observations of 100 interstitial carbon atom in
975 title = "{EPR} identification of the single-acceptor state of
976 interstitial carbon in silicon",
977 author = "L. W. Song and G. D. Watkins",
978 journal = "Phys. Rev. B",
981 pages = "5759--5764",
985 doi = "10.1103/PhysRevB.42.5759",
986 publisher = "American Physical Society",
987 notes = "carbon diffusion in silicon",
991 author = "A K Tipping and R C Newman",
992 title = "The diffusion coefficient of interstitial carbon in
994 journal = "Semicond. Sci. Technol.",
998 URL = "http://stacks.iop.org/0268-1242/2/315",
1000 notes = "diffusion coefficient of carbon interstitials in
1005 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1008 title = "Annealing behavior of Me{V} implanted carbon in
1012 journal = "Journal of Applied Physics",
1015 pages = "3815--3820",
1016 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1017 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1019 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1020 doi = "10.1063/1.354474",
1021 notes = "c at interstitial location for rt implantation in si",
1025 title = "Carbon incorporation into Si at high concentrations by
1026 ion implantation and solid phase epitaxy",
1027 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1028 Picraux and J. K. Watanabe and J. W. Mayer",
1029 journal = "J. Appl. Phys.",
1034 doi = "10.1063/1.360806",
1035 notes = "strained silicon, carbon supersaturation",
1038 @Article{laveant2002,
1039 title = "Epitaxy of carbon-rich silicon with {MBE}",
1040 journal = "Mater. Sci. Eng., B",
1046 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1047 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1048 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1050 notes = "low c in si, tensile stress to compensate compressive
1051 stress, avoid sic precipitation",
1055 title = "The formation of swirl defects in silicon by
1056 agglomeration of self-interstitials",
1057 journal = "Journal of Crystal Growth",
1064 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1065 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1066 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1067 notes = "b-swirl: si + c interstitial agglomerates, c-si
1072 title = "Microdefects in silicon and their relation to point
1074 journal = "Journal of Crystal Growth",
1081 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1082 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1083 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1084 notes = "swirl review",
1088 author = "P. Werner and S. Eichler and G. Mariani and R.
1089 K{\"{o}}gler and W. Skorupa",
1090 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1091 silicon by transmission electron microscopy",
1094 journal = "Appl. Phys. Lett.",
1098 keywords = "silicon; ion implantation; carbon; crystal defects;
1099 transmission electron microscopy; annealing; positron
1100 annihilation; secondary ion mass spectroscopy; buried
1101 layers; precipitation",
1102 URL = "http://link.aip.org/link/?APL/70/252/1",
1103 doi = "10.1063/1.118381",
1104 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1108 @InProceedings{werner96,
1109 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1111 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1112 International Conference on",
1113 title = "{TEM} investigation of {C}-Si defects in carbon
1120 doi = "10.1109/IIT.1996.586497",
1122 notes = "c-si agglomerates dumbbells",
1126 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1129 title = "Carbon diffusion in silicon",
1132 journal = "Appl. Phys. Lett.",
1135 pages = "2465--2467",
1136 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1137 secondary ion mass spectra; semiconductor epitaxial
1138 layers; annealing; impurity-defect interactions;
1139 impurity distribution",
1140 URL = "http://link.aip.org/link/?APL/73/2465/1",
1141 doi = "10.1063/1.122483",
1142 notes = "c diffusion in si, kick out mechnism",
1146 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1148 title = "Self-interstitial enhanced carbon diffusion in
1152 journal = "Applied Physics Letters",
1156 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1157 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1158 TEMPERATURE; IMPURITIES",
1159 URL = "http://link.aip.org/link/?APL/45/268/1",
1160 doi = "10.1063/1.95167",
1161 notes = "c diffusion due to si self-interstitials",
1165 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1168 title = "Characterization of SiGe/Si heterostructures formed by
1169 Ge[sup + ] and {C}[sup + ] implantation",
1172 journal = "Applied Physics Letters",
1175 pages = "2345--2347",
1176 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1177 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1178 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1179 EPITAXY; CARBON IONS; GERMANIUM IONS",
1180 URL = "http://link.aip.org/link/?APL/57/2345/1",
1181 doi = "10.1063/1.103888",
1185 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1186 Doyle and S. T. Picraux and J. W. Mayer",
1188 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1191 journal = "Applied Physics Letters",
1194 pages = "2786--2788",
1195 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1196 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1197 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1198 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1199 EPITAXY; AMORPHIZATION",
1200 URL = "http://link.aip.org/link/?APL/63/2786/1",
1201 doi = "10.1063/1.110334",
1205 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1206 Picraux and J. K. Watanabe and J. W. Mayer",
1208 title = "Precipitation and relaxation in strained Si[sub 1 -
1209 y]{C}[sub y]/Si heterostructures",
1212 journal = "J. Appl. Phys.",
1215 pages = "3656--3668",
1216 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1217 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1218 doi = "10.1063/1.357429",
1219 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1220 precipitation by substitutional carbon, coherent prec,
1221 coherent to incoherent transition strain vs interface
1226 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1229 title = "Investigation of the high temperature behavior of
1230 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1233 journal = "J. Appl. Phys.",
1236 pages = "1934--1937",
1237 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1238 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1239 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1240 TEMPERATURE RANGE 04001000 K",
1241 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1242 doi = "10.1063/1.358826",
1246 title = "Prospects for device implementation of wide band gap
1248 author = "J. H. Edgar",
1249 journal = "J. Mater. Res.",
1254 doi = "10.1557/JMR.1992.0235",
1255 notes = "properties wide band gap semiconductor, sic
1259 @Article{zirkelbach2007,
1260 title = "Monte Carlo simulation study of a selforganisation
1261 process leading to ordered precipitate structures",
1262 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1264 journal = "Nucl. Instr. and Meth. B",
1271 doi = "doi:10.1016/j.nimb.2006.12.118",
1272 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1276 @Article{zirkelbach2006,
1277 title = "Monte-Carlo simulation study of the self-organization
1278 of nanometric amorphous precipitates in regular arrays
1279 during ion irradiation",
1280 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1282 journal = "Nucl. Instr. and Meth. B",
1289 doi = "doi:10.1016/j.nimb.2005.08.162",
1290 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1294 @Article{zirkelbach2005,
1295 title = "Modelling of a selforganization process leading to
1296 periodic arrays of nanometric amorphous precipitates by
1298 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1300 journal = "Comp. Mater. Sci.",
1307 doi = "doi:10.1016/j.commatsci.2004.12.016",
1308 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1312 @Article{zirkelbach09,
1313 title = "Molecular dynamics simulation of defect formation and
1314 precipitation in heavily carbon doped silicon",
1315 journal = "Mater. Sci. Eng., B",
1320 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1321 Silicon Materials Research for Electronic and
1322 Photovoltaic Applications",
1324 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1325 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1326 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1328 keywords = "Silicon",
1329 keywords = "Carbon",
1330 keywords = "Silicon carbide",
1331 keywords = "Nucleation",
1332 keywords = "Defect formation",
1333 keywords = "Molecular dynamics simulations",
1336 @Article{zirkelbach10,
1337 title = "Defects in carbon implanted silicon calculated by
1338 classical potentials and first-principles methods",
1339 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1340 K. N. Lindner and W. G. Schmidt and E. Rauls",
1341 journal = "Phys. Rev. B",
1348 doi = "10.1103/PhysRevB.82.094110",
1349 publisher = "American Physical Society",
1352 @Article{zirkelbach11a,
1353 title = "First principles study of defects in carbon implanted
1355 journal = "to be published",
1360 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1361 and W. G. Schmidt and E. Rauls",
1364 @Article{zirkelbach11b,
1366 journal = "to be published",
1371 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1372 K. N. Lindner and W. G. Schmidt and E. Rauls",
1376 author = "J. K. N. Lindner and A. Frohnwieser and B.
1377 Rauschenbach and B. Stritzker",
1378 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1380 journal = "MRS Online Proceedings Library",
1385 doi = "10.1557/PROC-354-171",
1386 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1387 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1388 notes = "first time ibs at moderate temperatures",
1392 title = "Formation of buried epitaxial silicon carbide layers
1393 in silicon by ion beam synthesis",
1394 journal = "Materials Chemistry and Physics",
1401 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1402 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1403 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1404 Götz and A. Frohnwieser and B. Rauschenbach and B.
1406 notes = "dose window",
1409 @Article{calcagno96,
1410 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1412 journal = "Nuclear Instruments and Methods in Physics Research
1413 Section B: Beam Interactions with Materials and Atoms",
1418 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1419 New Trends in Ion Beam Processing of Materials",
1421 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1422 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1423 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1424 Grimaldi and P. Musumeci",
1425 notes = "dose window, graphitic bonds",
1429 title = "Mechanisms of Si{C} Formation in the Ion Beam
1430 Synthesis of 3{C}-Si{C} Layers in Silicon",
1431 journal = "Materials Science Forum",
1436 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1437 URL = "http://www.scientific.net/MSF.264-268.215",
1438 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1439 notes = "intermediate temperature for sharp interface + good
1444 title = "Controlling the density distribution of Si{C}
1445 nanocrystals for the ion beam synthesis of buried Si{C}
1447 journal = "Nucl. Instrum. Methods Phys. Res. B",
1454 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1455 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1456 author = "J. K. N. Lindner and B. Stritzker",
1457 notes = "two-step implantation process",
1460 @Article{lindner99_2,
1461 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1463 journal = "Nucl. Instrum. Methods Phys. Res. B",
1469 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1470 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1471 author = "J. K. N. Lindner and B. Stritzker",
1472 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1476 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1477 Basic physical processes",
1478 journal = "Nucl. Instrum. Methods Phys. Res. B",
1485 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1486 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1487 author = "J{\"{o}}rg K. N. Lindner",
1491 title = "High-dose carbon implantations into silicon:
1492 fundamental studies for new technological tricks",
1493 author = "J. K. N. Lindner",
1494 journal = "Appl. Phys. A",
1498 doi = "10.1007/s00339-002-2062-8",
1499 notes = "ibs, burried sic layers",
1503 title = "On the balance between ion beam induced nanoparticle
1504 formation and displacive precipitate resolution in the
1506 journal = "Mater. Sci. Eng., C",
1511 note = "Current Trends in Nanoscience - from Materials to
1514 doi = "DOI: 10.1016/j.msec.2005.09.099",
1515 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1516 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1518 notes = "c int diffusion barrier",
1522 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1523 application in buffer layer for Ga{N} epitaxial
1525 journal = "Applied Surface Science",
1530 note = "APHYS'03 Special Issue",
1532 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1533 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1534 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1535 and S. Nishio and K. Yasuda and Y. Ishigami",
1536 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1539 @Article{yamamoto04,
1540 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1541 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1542 implantation into Si(1 1 1) substrate",
1543 journal = "Journal of Crystal Growth",
1548 note = "Proceedings of the 11th Biennial (US) Workshop on
1549 Organometallic Vapor Phase Epitaxy (OMVPE)",
1551 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1552 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1553 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1554 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1555 notes = "gan on 3c-sic",
1559 title = "Substrates for gallium nitride epitaxy",
1560 journal = "Materials Science and Engineering: R: Reports",
1567 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1568 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1569 author = "L. Liu and J. H. Edgar",
1570 notes = "gan substrates",
1573 @Article{takeuchi91,
1574 title = "Growth of single crystalline Ga{N} film on Si
1575 substrate using 3{C}-Si{C} as an intermediate layer",
1576 journal = "Journal of Crystal Growth",
1583 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1584 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1585 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1586 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1587 notes = "gan on 3c-sic (first time?)",
1591 author = "B. J. Alder and T. E. Wainwright",
1592 title = "Phase Transition for a Hard Sphere System",
1595 journal = "J. Chem. Phys.",
1598 pages = "1208--1209",
1599 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1600 doi = "10.1063/1.1743957",
1604 author = "B. J. Alder and T. E. Wainwright",
1605 title = "Studies in Molecular Dynamics. {I}. General Method",
1608 journal = "J. Chem. Phys.",
1612 URL = "http://link.aip.org/link/?JCP/31/459/1",
1613 doi = "10.1063/1.1730376",
1616 @Article{tersoff_si1,
1617 title = "New empirical model for the structural properties of
1619 author = "J. Tersoff",
1620 journal = "Phys. Rev. Lett.",
1627 doi = "10.1103/PhysRevLett.56.632",
1628 publisher = "American Physical Society",
1631 @Article{tersoff_si2,
1632 title = "New empirical approach for the structure and energy of
1634 author = "J. Tersoff",
1635 journal = "Phys. Rev. B",
1638 pages = "6991--7000",
1642 doi = "10.1103/PhysRevB.37.6991",
1643 publisher = "American Physical Society",
1646 @Article{tersoff_si3,
1647 title = "Empirical interatomic potential for silicon with
1648 improved elastic properties",
1649 author = "J. Tersoff",
1650 journal = "Phys. Rev. B",
1653 pages = "9902--9905",
1657 doi = "10.1103/PhysRevB.38.9902",
1658 publisher = "American Physical Society",
1662 title = "Empirical Interatomic Potential for Carbon, with
1663 Applications to Amorphous Carbon",
1664 author = "J. Tersoff",
1665 journal = "Phys. Rev. Lett.",
1668 pages = "2879--2882",
1672 doi = "10.1103/PhysRevLett.61.2879",
1673 publisher = "American Physical Society",
1677 title = "Modeling solid-state chemistry: Interatomic potentials
1678 for multicomponent systems",
1679 author = "J. Tersoff",
1680 journal = "Phys. Rev. B",
1683 pages = "5566--5568",
1687 doi = "10.1103/PhysRevB.39.5566",
1688 publisher = "American Physical Society",
1692 title = "Carbon defects and defect reactions in silicon",
1693 author = "J. Tersoff",
1694 journal = "Phys. Rev. Lett.",
1697 pages = "1757--1760",
1701 doi = "10.1103/PhysRevLett.64.1757",
1702 publisher = "American Physical Society",
1706 title = "Point defects and dopant diffusion in silicon",
1707 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1708 journal = "Rev. Mod. Phys.",
1715 doi = "10.1103/RevModPhys.61.289",
1716 publisher = "American Physical Society",
1720 title = "Silicon carbide: synthesis and processing",
1721 journal = "Nucl. Instrum. Methods Phys. Res. B",
1726 note = "Radiation Effects in Insulators",
1728 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1729 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1730 author = "W. Wesch",
1734 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1735 Palmour and J. A. Edmond",
1736 journal = "Proceedings of the IEEE",
1737 title = "Thin film deposition and microelectronic and
1738 optoelectronic device fabrication and characterization
1739 in monocrystalline alpha and beta silicon carbide",
1745 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1746 diode;SiC;dry etching;electrical
1747 contacts;etching;impurity incorporation;optoelectronic
1748 device fabrication;solid-state devices;surface
1749 chemistry;Schottky effect;Schottky gate field effect
1750 transistors;Schottky-barrier
1751 diodes;etching;heterojunction bipolar
1752 transistors;insulated gate field effect
1753 transistors;light emitting diodes;semiconductor
1754 materials;semiconductor thin films;silicon compounds;",
1755 doi = "10.1109/5.90132",
1757 notes = "sic growth methods",
1761 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1762 Lin and B. Sverdlov and M. Burns",
1764 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1765 ZnSe-based semiconductor device technologies",
1768 journal = "J. Appl. Phys.",
1771 pages = "1363--1398",
1772 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1773 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1774 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1776 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1777 doi = "10.1063/1.358463",
1778 notes = "sic intro, properties",
1782 author = "Noch Unbekannt",
1783 title = "How to find references",
1784 journal = "Journal of Applied References",
1791 title = "Atomistic simulation of thermomechanical properties of
1793 author = "Meijie Tang and Sidney Yip",
1794 journal = "Phys. Rev. B",
1797 pages = "15150--15159",
1800 doi = "10.1103/PhysRevB.52.15150",
1801 notes = "modified tersoff, scale cutoff with volume, promising
1802 tersoff reparametrization",
1803 publisher = "American Physical Society",
1807 title = "Silicon carbide as a new {MEMS} technology",
1808 journal = "Sensors and Actuators A: Physical",
1814 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1815 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1816 author = "Pasqualina M. Sarro",
1818 keywords = "Silicon carbide",
1819 keywords = "Micromachining",
1820 keywords = "Mechanical stress",
1824 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1825 semiconductor for high-temperature applications: {A}
1827 journal = "Solid-State Electronics",
1830 pages = "1409--1422",
1833 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1834 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1835 author = "J. B. Casady and R. W. Johnson",
1836 notes = "sic intro",
1839 @Article{giancarli98,
1840 title = "Design requirements for Si{C}/Si{C} composites
1841 structural material in fusion power reactor blankets",
1842 journal = "Fusion Engineering and Design",
1848 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1849 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1850 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1851 Marois and N. B. Morley and J. F. Salavy",
1855 title = "Electrical and optical characterization of Si{C}",
1856 journal = "Physica B: Condensed Matter",
1862 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1863 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1864 author = "G. Pensl and W. J. Choyke",
1868 title = "Investigation of growth processes of ingots of silicon
1869 carbide single crystals",
1870 journal = "J. Cryst. Growth",
1875 notes = "modified lely process",
1877 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1878 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1879 author = "Yu. M. Tairov and V. F. Tsvetkov",
1883 title = "General principles of growing large-size single
1884 crystals of various silicon carbide polytypes",
1885 journal = "Journal of Crystal Growth",
1892 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1893 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1894 author = "Yu.M. Tairov and V. F. Tsvetkov",
1898 title = "Si{C} boule growth by sublimation vapor transport",
1899 journal = "Journal of Crystal Growth",
1906 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1907 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1908 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1909 R. H. Hopkins and W. J. Choyke",
1913 title = "Growth of large Si{C} single crystals",
1914 journal = "Journal of Crystal Growth",
1921 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1922 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1923 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1924 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1929 title = "Control of polytype formation by surface energy
1930 effects during the growth of Si{C} monocrystals by the
1931 sublimation method",
1932 journal = "Journal of Crystal Growth",
1939 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1940 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1941 author = "R. A. Stein and P. Lanig",
1942 notes = "6h and 4h, sublimation technique",
1946 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1949 title = "Production of large-area single-crystal wafers of
1950 cubic Si{C} for semiconductor devices",
1953 journal = "Appl. Phys. Lett.",
1957 keywords = "silicon carbides; layers; chemical vapor deposition;
1959 URL = "http://link.aip.org/link/?APL/42/460/1",
1960 doi = "10.1063/1.93970",
1961 notes = "cvd of 3c-sic on si, sic buffer layer",
1965 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1966 and Hiroyuki Matsunami",
1968 title = "Epitaxial growth and electric characteristics of cubic
1972 journal = "J. Appl. Phys.",
1975 pages = "4889--4893",
1976 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1977 doi = "10.1063/1.338355",
1978 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1983 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1985 title = "Growth and Characterization of Cubic Si{C}
1986 Single-Crystal Films on Si",
1989 journal = "Journal of The Electrochemical Society",
1992 pages = "1558--1565",
1993 keywords = "semiconductor materials; silicon compounds; carbon
1994 compounds; crystal morphology; electron mobility",
1995 URL = "http://link.aip.org/link/?JES/134/1558/1",
1996 doi = "10.1149/1.2100708",
1997 notes = "blue light emitting diodes (led)",
2000 @Article{powell87_2,
2001 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2002 C. M. Chorey and T. T. Cheng and P. Pirouz",
2004 title = "Improved beta-Si{C} heteroepitaxial films using
2005 off-axis Si substrates",
2008 journal = "Applied Physics Letters",
2012 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2013 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2014 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2015 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2016 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2017 URL = "http://link.aip.org/link/?APL/51/823/1",
2018 doi = "10.1063/1.98824",
2019 notes = "improved sic on off-axis si substrates, reduced apbs",
2023 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2024 journal = "Journal of Crystal Growth",
2031 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2032 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2033 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2035 notes = "step-controlled epitaxy model",
2039 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2040 and Hiroyuki Matsunami",
2041 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2045 journal = "J. Appl. Phys.",
2049 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2050 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2052 URL = "http://link.aip.org/link/?JAP/73/726/1",
2053 doi = "10.1063/1.353329",
2054 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2057 @Article{powell90_2,
2058 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2059 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2060 Yoganathan and J. Yang and P. Pirouz",
2062 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2063 vicinal (0001) 6{H}-Si{C} wafers",
2066 journal = "Applied Physics Letters",
2069 pages = "1442--1444",
2070 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2071 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2072 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2073 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2074 URL = "http://link.aip.org/link/?APL/56/1442/1",
2075 doi = "10.1063/1.102492",
2076 notes = "cvd of 6h-sic on 6h-sic",
2080 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2082 title = "Chemical vapor deposition and characterization of
2083 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2087 journal = "Journal of Applied Physics",
2090 pages = "2672--2679",
2091 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2092 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2093 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2094 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2095 PHASE EPITAXY; CRYSTAL ORIENTATION",
2096 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2097 doi = "10.1063/1.341608",
2101 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2102 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2103 Yoganathan and J. Yang and P. Pirouz",
2105 title = "Growth of improved quality 3{C}-Si{C} films on
2106 6{H}-Si{C} substrates",
2109 journal = "Appl. Phys. Lett.",
2112 pages = "1353--1355",
2113 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2114 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2115 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2117 URL = "http://link.aip.org/link/?APL/56/1353/1",
2118 doi = "10.1063/1.102512",
2119 notes = "cvd of 3c-sic on 6h-sic",
2123 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2124 Rozgonyi and K. L. More",
2126 title = "An examination of double positioning boundaries and
2127 interface misfit in beta-Si{C} films on alpha-Si{C}
2131 journal = "Journal of Applied Physics",
2134 pages = "2645--2650",
2135 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2136 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2137 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2138 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2139 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2140 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2141 doi = "10.1063/1.341004",
2145 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2146 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2147 and W. J. Choyke and L. Clemen and M. Yoganathan",
2149 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2150 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2153 journal = "Applied Physics Letters",
2157 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2158 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2159 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2160 URL = "http://link.aip.org/link/?APL/59/333/1",
2161 doi = "10.1063/1.105587",
2165 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2166 Thokala and M. J. Loboda",
2168 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2169 films on 6{H}-Si{C} by chemical vapor deposition from
2173 journal = "J. Appl. Phys.",
2176 pages = "1271--1273",
2177 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2178 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2180 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2181 doi = "10.1063/1.360368",
2182 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2186 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2187 properties of its p-n junction",
2188 journal = "Journal of Crystal Growth",
2195 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2196 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2197 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2199 notes = "first time ssmbe of 3c-sic on 6h-sic",
2203 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2204 [alpha]-Si{C}(0001) at low temperatures by solid-source
2205 molecular beam epitaxy",
2206 journal = "J. Cryst. Growth",
2212 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2213 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2214 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2215 Schr{\"{o}}ter and W. Richter",
2216 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2219 @Article{fissel95_apl,
2220 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2222 title = "Low-temperature growth of Si{C} thin films on Si and
2223 6{H}--Si{C} by solid-source molecular beam epitaxy",
2226 journal = "Appl. Phys. Lett.",
2229 pages = "3182--3184",
2230 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2232 URL = "http://link.aip.org/link/?APL/66/3182/1",
2233 doi = "10.1063/1.113716",
2234 notes = "mbe 3c-sic on si and 6h-sic",
2238 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2239 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2241 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2242 migration enhanced epitaxy controlled to an atomic
2243 level using surface superstructures",
2246 journal = "Applied Physics Letters",
2249 pages = "1204--1206",
2250 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2251 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2253 URL = "http://link.aip.org/link/?APL/68/1204/1",
2254 doi = "10.1063/1.115969",
2255 notes = "ss mbe sic, superstructure, reconstruction",
2259 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2260 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2261 C. M. Bertoni and A. Catellani",
2262 journal = "Phys. Rev. Lett.",
2269 doi = "10.1103/PhysRevLett.91.136101",
2270 publisher = "American Physical Society",
2271 notes = "dft calculations mbe sic growth",
2275 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2277 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2281 journal = "Appl. Phys. Lett.",
2285 URL = "http://link.aip.org/link/?APL/18/509/1",
2286 doi = "10.1063/1.1653516",
2287 notes = "first time sic by ibs, follow cites for precipitation
2292 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2293 and E. V. Lubopytova",
2294 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2295 by ion implantation",
2296 publisher = "Taylor \& Francis",
2298 journal = "Radiation Effects",
2302 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2303 notes = "3c-sic for different temperatures, amorphous, poly,
2304 single crystalline",
2307 @Article{akimchenko80,
2308 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2309 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2310 title = "Structure and optical properties of silicon implanted
2311 by high doses of 70 and 310 ke{V} carbon ions",
2312 publisher = "Taylor \& Francis",
2314 journal = "Radiation Effects",
2318 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2319 notes = "3c-sic nucleation by thermal spikes",
2323 title = "Structure and annealing properties of silicon carbide
2324 thin layers formed by implantation of carbon ions in
2326 journal = "Thin Solid Films",
2333 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2334 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2335 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2340 title = "Characteristics of the synthesis of [beta]-Si{C} by
2341 the implantation of carbon ions into silicon",
2342 journal = "Thin Solid Films",
2349 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2350 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2351 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2356 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2357 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2358 Chater and J. A. Iulner and J. Davis",
2359 title = "Formation mechanisms and structures of insulating
2360 compounds formed in silicon by ion beam synthesis",
2361 publisher = "Taylor \& Francis",
2363 journal = "Radiation Effects",
2367 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2368 notes = "ibs, comparison with sio and sin, higher temp or
2373 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2374 J. Davis and G. E. Celler",
2376 title = "Formation of buried layers of beta-Si{C} using ion
2377 beam synthesis and incoherent lamp annealing",
2380 journal = "Appl. Phys. Lett.",
2383 pages = "2242--2244",
2384 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2385 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2386 URL = "http://link.aip.org/link/?APL/51/2242/1",
2387 doi = "10.1063/1.98953",
2388 notes = "nice tem images, sic by ibs",
2392 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2393 and M. Olivier and A. M. Papon and G. Rolland",
2395 title = "High-temperature ion beam synthesis of cubic Si{C}",
2398 journal = "Journal of Applied Physics",
2401 pages = "2908--2912",
2402 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2403 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2404 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2405 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2406 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2407 REACTIONS; MONOCRYSTALS",
2408 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2409 doi = "10.1063/1.346092",
2410 notes = "triple energy implantation to overcome high annealing
2415 author = "R. I. Scace and G. A. Slack",
2417 title = "Solubility of Carbon in Silicon and Germanium",
2420 journal = "J. Chem. Phys.",
2423 pages = "1551--1555",
2424 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2425 doi = "10.1063/1.1730236",
2426 notes = "solubility of c in c-si, si-c phase diagram",
2430 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2432 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2433 Laboratories Eindhoven Netherlands Eindhoven
2435 title = "Boron implantations in silicon: {A} comparison of
2436 charge carrier and boron concentration profiles",
2437 journal = "Applied Physics A: Materials Science \& Processing",
2438 publisher = "Springer Berlin / Heidelberg",
2440 keyword = "Physics and Astronomy",
2444 URL = "http://dx.doi.org/10.1007/BF00884267",
2445 note = "10.1007/BF00884267",
2447 notes = "first time ted (only for boron?)",
2451 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2454 title = "Rapid annealing and the anomalous diffusion of ion
2455 implanted boron into silicon",
2458 journal = "Applied Physics Letters",
2462 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2463 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2464 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2465 URL = "http://link.aip.org/link/?APL/50/416/1",
2466 doi = "10.1063/1.98160",
2467 notes = "ted of boron in si",
2471 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2474 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2475 time, and matrix dependence of atomic and electrical
2479 journal = "Journal of Applied Physics",
2482 pages = "6191--6198",
2483 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2484 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2485 CRYSTALS; AMORPHIZATION",
2486 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2487 doi = "10.1063/1.346910",
2488 notes = "ted of boron in si",
2492 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2493 F. W. Saris and W. Vandervorst",
2495 title = "Role of {C} and {B} clusters in transient diffusion of
2499 journal = "Appl. Phys. Lett.",
2502 pages = "1150--1152",
2503 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2504 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2506 URL = "http://link.aip.org/link/?APL/68/1150/1",
2507 doi = "10.1063/1.115706",
2508 notes = "suppression of transient enhanced diffusion (ted)",
2512 title = "Implantation and transient boron diffusion: the role
2513 of the silicon self-interstitial",
2514 journal = "Nucl. Instrum. Methods Phys. Res. B",
2519 note = "Selected Papers of the Tenth International Conference
2520 on Ion Implantation Technology (IIT '94)",
2522 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2523 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2524 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2529 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2530 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2531 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2534 title = "Physical mechanisms of transient enhanced dopant
2535 diffusion in ion-implanted silicon",
2538 journal = "J. Appl. Phys.",
2541 pages = "6031--6050",
2542 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2543 doi = "10.1063/1.364452",
2544 notes = "ted, transient enhanced diffusion, c silicon trap",
2548 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2550 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2551 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2554 journal = "Appl. Phys. Lett.",
2558 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2559 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2560 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2562 URL = "http://link.aip.org/link/?APL/64/324/1",
2563 doi = "10.1063/1.111195",
2564 notes = "beta sic nano crystals in si, mbe, annealing",
2568 author = "Richard A. Soref",
2570 title = "Optical band gap of the ternary semiconductor Si[sub 1
2571 - x - y]Ge[sub x]{C}[sub y]",
2574 journal = "J. Appl. Phys.",
2577 pages = "2470--2472",
2578 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2579 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2581 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2582 doi = "10.1063/1.349403",
2583 notes = "band gap of strained si by c",
2587 author = "E Kasper",
2588 title = "Superlattices of group {IV} elements, a new
2589 possibility to produce direct band gap material",
2590 journal = "Physica Scripta",
2593 URL = "http://stacks.iop.org/1402-4896/T35/232",
2595 notes = "superlattices, convert indirect band gap into a
2600 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2603 title = "Growth and strain compensation effects in the ternary
2604 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2607 journal = "Applied Physics Letters",
2610 pages = "3033--3035",
2611 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2612 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2613 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2614 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2616 URL = "http://link.aip.org/link/?APL/60/3033/1",
2617 doi = "10.1063/1.106774",
2621 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2624 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2628 journal = "J. Vac. Sci. Technol. B",
2631 pages = "1064--1068",
2632 location = "Ottawa (Canada)",
2633 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2634 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2635 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2636 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2637 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2638 doi = "10.1116/1.587008",
2639 notes = "substitutional c in si by mbe",
2642 @Article{powell93_2,
2643 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2644 of the ternary system",
2645 journal = "Journal of Crystal Growth",
2652 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2653 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2654 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2659 author = "H. J. Osten",
2660 title = "Modification of Growth Modes in Lattice-Mismatched
2661 Epitaxial Systems: Si/Ge",
2662 journal = "physica status solidi (a)",
2665 publisher = "WILEY-VCH Verlag",
2667 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2668 doi = "10.1002/pssa.2211450203",
2673 @Article{dietrich94,
2674 title = "Lattice distortion in a strain-compensated
2675 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2676 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2677 Methfessel and P. Zaumseil",
2678 journal = "Phys. Rev. B",
2681 pages = "17185--17190",
2685 doi = "10.1103/PhysRevB.49.17185",
2686 publisher = "American Physical Society",
2690 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2692 title = "Growth of an inverse tetragonal distorted SiGe layer
2693 on Si(001) by adding small amounts of carbon",
2696 journal = "Applied Physics Letters",
2699 pages = "3440--3442",
2700 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2701 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2702 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2704 URL = "http://link.aip.org/link/?APL/64/3440/1",
2705 doi = "10.1063/1.111235",
2706 notes = "inversely strained / distorted heterostructure",
2710 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2711 LeGoues and J. C. Tsang and F. Cardone",
2713 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2714 molecular beam epitaxy",
2717 journal = "Applied Physics Letters",
2721 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2722 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2723 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2724 FILM GROWTH; MICROSTRUCTURE",
2725 URL = "http://link.aip.org/link/?APL/60/356/1",
2726 doi = "10.1063/1.106655",
2730 author = "H. J. Osten and J. Griesche and S. Scalese",
2732 title = "Substitutional carbon incorporation in epitaxial
2733 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2734 molecular beam epitaxy",
2737 journal = "Appl. Phys. Lett.",
2741 keywords = "molecular beam epitaxial growth; semiconductor growth;
2742 wide band gap semiconductors; interstitials; silicon
2744 URL = "http://link.aip.org/link/?APL/74/836/1",
2745 doi = "10.1063/1.123384",
2746 notes = "substitutional c in si by mbe",
2749 @Article{hohenberg64,
2750 title = "Inhomogeneous Electron Gas",
2751 author = "P. Hohenberg and W. Kohn",
2752 journal = "Phys. Rev.",
2755 pages = "B864--B871",
2759 doi = "10.1103/PhysRev.136.B864",
2760 publisher = "American Physical Society",
2761 notes = "density functional theory, dft",
2765 title = "Self-Consistent Equations Including Exchange and
2766 Correlation Effects",
2767 author = "W. Kohn and L. J. Sham",
2768 journal = "Phys. Rev.",
2771 pages = "A1133--A1138",
2775 doi = "10.1103/PhysRev.140.A1133",
2776 publisher = "American Physical Society",
2777 notes = "dft, exchange and correlation",
2781 title = "Strain-stabilized highly concentrated pseudomorphic
2782 $Si1-x$$Cx$ layers in Si",
2783 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2785 journal = "Phys. Rev. Lett.",
2788 pages = "3578--3581",
2792 doi = "10.1103/PhysRevLett.72.3578",
2793 publisher = "American Physical Society",
2794 notes = "high c concentration in si, heterostructure, strained
2799 title = "Phosphorous Doping of Strain-Induced
2800 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2801 by Low-Temperature Chemical Vapor Deposition",
2802 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2803 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2804 journal = "Japanese Journal of Applied Physics",
2806 number = "Part 1, No. 4B",
2807 pages = "2472--2475",
2810 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2811 doi = "10.1143/JJAP.41.2472",
2812 publisher = "The Japan Society of Applied Physics",
2813 notes = "experimental charge carrier mobility in strained si",
2817 title = "Electron Transport Model for Strained Silicon-Carbon
2819 author = "Shu-Tong Chang and Chung-Yi Lin",
2820 journal = "Japanese J. Appl. Phys.",
2823 pages = "2257--2262",
2826 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2827 doi = "10.1143/JJAP.44.2257",
2828 publisher = "The Japan Society of Applied Physics",
2829 notes = "enhance of electron mobility in strained si",
2832 @Article{kissinger94,
2833 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2836 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2837 y] layers on Si(001)",
2840 journal = "Applied Physics Letters",
2843 pages = "3356--3358",
2844 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2845 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2846 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2847 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2848 URL = "http://link.aip.org/link/?APL/65/3356/1",
2849 doi = "10.1063/1.112390",
2850 notes = "strained si influence on optical properties",
2854 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2857 title = "Substitutional versus interstitial carbon
2858 incorporation during pseudomorphic growth of Si[sub 1 -
2859 y]{C}[sub y] on Si(001)",
2862 journal = "Journal of Applied Physics",
2865 pages = "6711--6715",
2866 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2867 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2869 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2870 doi = "10.1063/1.363797",
2871 notes = "mbe substitutional vs interstitial c incorporation",
2875 author = "H. J. Osten and P. Gaworzewski",
2877 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2878 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2882 journal = "J. Appl. Phys.",
2885 pages = "4977--4981",
2886 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2887 semiconductors; semiconductor epitaxial layers; carrier
2888 density; Hall mobility; interstitials; defect states",
2889 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2890 doi = "10.1063/1.366364",
2891 notes = "charge transport in strained si",
2895 title = "Carbon-mediated aggregation of self-interstitials in
2896 silicon: {A} large-scale molecular dynamics study",
2897 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2898 journal = "Phys. Rev. B",
2905 doi = "10.1103/PhysRevB.69.155214",
2906 publisher = "American Physical Society",
2907 notes = "simulation using promising tersoff reparametrization",
2911 title = "Event-Based Relaxation of Continuous Disordered
2913 author = "G. T. Barkema and Normand Mousseau",
2914 journal = "Phys. Rev. Lett.",
2917 pages = "4358--4361",
2921 doi = "10.1103/PhysRevLett.77.4358",
2922 publisher = "American Physical Society",
2923 notes = "activation relaxation technique, art, speed up slow
2928 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2929 Minoukadeh and F. Willaime",
2931 title = "Some improvements of the activation-relaxation
2932 technique method for finding transition pathways on
2933 potential energy surfaces",
2936 journal = "J. Chem. Phys.",
2942 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2943 surfaces; vacancies (crystal)",
2944 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2945 doi = "10.1063/1.3088532",
2946 notes = "improvements to art, refs for methods to find
2947 transition pathways",
2950 @Article{parrinello81,
2951 author = "M. Parrinello and A. Rahman",
2953 title = "Polymorphic transitions in single crystals: {A} new
2954 molecular dynamics method",
2957 journal = "J. Appl. Phys.",
2960 pages = "7182--7190",
2961 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2962 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2963 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2964 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2965 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2967 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2968 doi = "10.1063/1.328693",
2971 @Article{stillinger85,
2972 title = "Computer simulation of local order in condensed phases
2974 author = "Frank H. Stillinger and Thomas A. Weber",
2975 journal = "Phys. Rev. B",
2978 pages = "5262--5271",
2982 doi = "10.1103/PhysRevB.31.5262",
2983 publisher = "American Physical Society",
2987 title = "Empirical potential for hydrocarbons for use in
2988 simulating the chemical vapor deposition of diamond
2990 author = "Donald W. Brenner",
2991 journal = "Phys. Rev. B",
2994 pages = "9458--9471",
2998 doi = "10.1103/PhysRevB.42.9458",
2999 publisher = "American Physical Society",
3000 notes = "brenner hydro carbons",
3004 title = "Modeling of Covalent Bonding in Solids by Inversion of
3005 Cohesive Energy Curves",
3006 author = "Martin Z. Bazant and Efthimios Kaxiras",
3007 journal = "Phys. Rev. Lett.",
3010 pages = "4370--4373",
3014 doi = "10.1103/PhysRevLett.77.4370",
3015 publisher = "American Physical Society",
3016 notes = "first si edip",
3020 title = "Environment-dependent interatomic potential for bulk
3022 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3024 journal = "Phys. Rev. B",
3027 pages = "8542--8552",
3031 doi = "10.1103/PhysRevB.56.8542",
3032 publisher = "American Physical Society",
3033 notes = "second si edip",
3037 title = "Interatomic potential for silicon defects and
3039 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3040 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3041 journal = "Phys. Rev. B",
3044 pages = "2539--2550",
3048 doi = "10.1103/PhysRevB.58.2539",
3049 publisher = "American Physical Society",
3050 notes = "latest si edip, good dislocation explanation",
3054 title = "{PARCAS} molecular dynamics code",
3055 author = "K. Nordlund",
3060 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3062 author = "Arthur F. Voter",
3063 journal = "Phys. Rev. Lett.",
3066 pages = "3908--3911",
3070 doi = "10.1103/PhysRevLett.78.3908",
3071 publisher = "American Physical Society",
3072 notes = "hyperdynamics, accelerated md",
3076 author = "Arthur F. Voter",
3078 title = "A method for accelerating the molecular dynamics
3079 simulation of infrequent events",
3082 journal = "J. Chem. Phys.",
3085 pages = "4665--4677",
3086 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3087 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3088 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3089 energy functions; surface diffusion; reaction kinetics
3090 theory; potential energy surfaces",
3091 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3092 doi = "10.1063/1.473503",
3093 notes = "improved hyperdynamics md",
3096 @Article{sorensen2000,
3097 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3099 title = "Temperature-accelerated dynamics for simulation of
3103 journal = "J. Chem. Phys.",
3106 pages = "9599--9606",
3107 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3108 MOLECULAR DYNAMICS METHOD; surface diffusion",
3109 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3110 doi = "10.1063/1.481576",
3111 notes = "temperature accelerated dynamics, tad",
3115 title = "Parallel replica method for dynamics of infrequent
3117 author = "Arthur F. Voter",
3118 journal = "Phys. Rev. B",
3121 pages = "R13985--R13988",
3125 doi = "10.1103/PhysRevB.57.R13985",
3126 publisher = "American Physical Society",
3127 notes = "parallel replica method, accelerated md",
3131 author = "Xiongwu Wu and Shaomeng Wang",
3133 title = "Enhancing systematic motion in molecular dynamics
3137 journal = "J. Chem. Phys.",
3140 pages = "9401--9410",
3141 keywords = "molecular dynamics method; argon; Lennard-Jones
3142 potential; crystallisation; liquid theory",
3143 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3144 doi = "10.1063/1.478948",
3145 notes = "self guided md, sgmd, accelerated md, enhancing
3149 @Article{choudhary05,
3150 author = "Devashish Choudhary and Paulette Clancy",
3152 title = "Application of accelerated molecular dynamics schemes
3153 to the production of amorphous silicon",
3156 journal = "J. Chem. Phys.",
3162 keywords = "molecular dynamics method; silicon; glass structure;
3163 amorphous semiconductors",
3164 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3165 doi = "10.1063/1.1878733",
3166 notes = "explanation of sgmd and hyper md, applied to amorphous
3171 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3173 title = "Carbon precipitation in silicon: Why is it so
3177 journal = "Appl. Phys. Lett.",
3180 pages = "3336--3338",
3181 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3182 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3184 URL = "http://link.aip.org/link/?APL/62/3336/1",
3185 doi = "10.1063/1.109063",
3186 notes = "interfacial energy of cubic sic and si, si self
3187 interstitials necessary for precipitation, volume
3188 decrease, high interface energy",
3191 @Article{chaussende08,
3192 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3193 journal = "J. Cryst. Growth",
3198 note = "Proceedings of the E-MRS Conference, Symposium G -
3199 Substrates of Wide Bandgap Materials",
3201 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3202 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3203 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3204 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3205 and A. Andreadou and E. K. Polychroniadis and C.
3206 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3207 notes = "3c-sic crystal growth, sic fabrication + links,
3211 @Article{chaussende07,
3212 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3213 title = "Status of Si{C} bulk growth processes",
3214 journal = "Journal of Physics D: Applied Physics",
3218 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3220 notes = "review of sic single crystal growth methods, process
3225 title = "Forces in Molecules",
3226 author = "R. P. Feynman",
3227 journal = "Phys. Rev.",
3234 doi = "10.1103/PhysRev.56.340",
3235 publisher = "American Physical Society",
3236 notes = "hellmann feynman forces",
3240 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3241 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3242 their Contrasting Properties",
3243 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3245 journal = "Phys. Rev. Lett.",
3252 doi = "10.1103/PhysRevLett.84.943",
3253 publisher = "American Physical Society",
3254 notes = "si sio2 and sic sio2 interface",
3257 @Article{djurabekova08,
3258 title = "Atomistic simulation of the interface structure of Si
3259 nanocrystals embedded in amorphous silica",
3260 author = "Flyura Djurabekova and Kai Nordlund",
3261 journal = "Phys. Rev. B",
3268 doi = "10.1103/PhysRevB.77.115325",
3269 publisher = "American Physical Society",
3270 notes = "nc-si in sio2, interface energy, nc construction,
3271 angular distribution, coordination",
3275 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3276 W. Liang and J. Zou",
3278 title = "Nature of interfacial defects and their roles in
3279 strain relaxation at highly lattice mismatched
3280 3{C}-Si{C}/Si (001) interface",
3283 journal = "J. Appl. Phys.",
3289 keywords = "anelastic relaxation; crystal structure; dislocations;
3290 elemental semiconductors; semiconductor growth;
3291 semiconductor thin films; silicon; silicon compounds;
3292 stacking faults; wide band gap semiconductors",
3293 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3294 doi = "10.1063/1.3234380",
3295 notes = "sic/si interface, follow refs, tem image
3296 deconvolution, dislocation defects",
3299 @Article{kitabatake93,
3300 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3303 title = "Simulations and experiments of Si{C} heteroepitaxial
3304 growth on Si(001) surface",
3307 journal = "J. Appl. Phys.",
3310 pages = "4438--4445",
3311 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3312 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3313 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3314 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3315 doi = "10.1063/1.354385",
3316 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3320 @Article{kitabatake97,
3321 author = "Makoto Kitabatake",
3322 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3323 Heteroepitaxial Growth",
3324 publisher = "WILEY-VCH Verlag",
3326 journal = "physica status solidi (b)",
3329 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3330 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3331 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3335 title = "Strain relaxation and thermal stability of the
3336 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3338 journal = "Thin Solid Films",
3345 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3346 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3347 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3348 keywords = "Strain relaxation",
3349 keywords = "Interfaces",
3350 keywords = "Thermal stability",
3351 keywords = "Molecular dynamics",
3352 notes = "tersoff sic/si interface study",
3356 title = "Ab initio Study of Misfit Dislocations at the
3357 $Si{C}/Si(001)$ Interface",
3358 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3360 journal = "Phys. Rev. Lett.",
3367 doi = "10.1103/PhysRevLett.89.156101",
3368 publisher = "American Physical Society",
3369 notes = "sic/si interface study",
3372 @Article{pizzagalli03,
3373 title = "Theoretical investigations of a highly mismatched
3374 interface: Si{C}/Si(001)",
3375 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3377 journal = "Phys. Rev. B",
3384 doi = "10.1103/PhysRevB.68.195302",
3385 publisher = "American Physical Society",
3386 notes = "tersoff md and ab initio sic/si interface study",
3390 title = "Atomic configurations of dislocation core and twin
3391 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3392 electron microscopy",
3393 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3394 H. Zheng and J. W. Liang",
3395 journal = "Phys. Rev. B",
3402 doi = "10.1103/PhysRevB.75.184103",
3403 publisher = "American Physical Society",
3404 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3408 @Article{hornstra58,
3409 title = "Dislocations in the diamond lattice",
3410 journal = "Journal of Physics and Chemistry of Solids",
3417 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3418 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3419 author = "J. Hornstra",
3420 notes = "dislocations in diamond lattice",
3424 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3425 Ion `Hot' Implantation",
3426 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3427 Hirao and Naoki Arai and Tomio Izumi",
3428 journal = "Japanese J. Appl. Phys.",
3430 number = "Part 1, No. 2A",
3434 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3435 doi = "10.1143/JJAP.31.343",
3436 publisher = "The Japan Society of Applied Physics",
3437 notes = "c-c bonds in c implanted si, hot implantation
3438 efficiency, c-c hard to break by thermal annealing",
3441 @Article{eichhorn99,
3442 author = "F. Eichhorn and N. Schell and W. Matz and R.
3445 title = "Strain and Si{C} particle formation in silicon
3446 implanted with carbon ions of medium fluence studied by
3447 synchrotron x-ray diffraction",
3450 journal = "J. Appl. Phys.",
3453 pages = "4184--4187",
3454 keywords = "silicon; carbon; elemental semiconductors; chemical
3455 interdiffusion; ion implantation; X-ray diffraction;
3456 precipitation; semiconductor doping",
3457 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3458 doi = "10.1063/1.371344",
3459 notes = "sic conversion by ibs, detected substitutional carbon,
3460 expansion of si lattice",
3463 @Article{eichhorn02,
3464 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3465 Metzger and W. Matz and R. K{\"{o}}gler",
3467 title = "Structural relation between Si and Si{C} formed by
3468 carbon ion implantation",
3471 journal = "J. Appl. Phys.",
3474 pages = "1287--1292",
3475 keywords = "silicon compounds; wide band gap semiconductors; ion
3476 implantation; annealing; X-ray scattering; transmission
3477 electron microscopy",
3478 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3479 doi = "10.1063/1.1428105",
3480 notes = "3c-sic alignement to si host in ibs depending on
3481 temperature, might explain c into c sub trafo",
3485 author = "G Lucas and M Bertolus and L Pizzagalli",
3486 title = "An environment-dependent interatomic potential for
3487 silicon carbide: calculation of bulk properties,
3488 high-pressure phases, point and extended defects, and
3489 amorphous structures",
3490 journal = "J. Phys.: Condens. Matter",
3494 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3500 author = "J Godet and L Pizzagalli and S Brochard and P
3502 title = "Comparison between classical potentials and ab initio
3503 methods for silicon under large shear",
3504 journal = "J. Phys.: Condens. Matter",
3508 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3510 notes = "comparison of empirical potentials, stillinger weber,
3511 edip, tersoff, ab initio",
3514 @Article{moriguchi98,
3515 title = "Verification of Tersoff's Potential for Static
3516 Structural Analysis of Solids of Group-{IV} Elements",
3517 author = "Koji Moriguchi and Akira Shintani",
3518 journal = "Japanese J. Appl. Phys.",
3520 number = "Part 1, No. 2",
3524 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3525 doi = "10.1143/JJAP.37.414",
3526 publisher = "The Japan Society of Applied Physics",
3527 notes = "tersoff stringent test",
3530 @Article{mazzarolo01,
3531 title = "Low-energy recoils in crystalline silicon: Quantum
3533 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3534 Lulli and Eros Albertazzi",
3535 journal = "Phys. Rev. B",
3542 doi = "10.1103/PhysRevB.63.195207",
3543 publisher = "American Physical Society",
3546 @Article{holmstroem08,
3547 title = "Threshold defect production in silicon determined by
3548 density functional theory molecular dynamics
3550 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3551 journal = "Phys. Rev. B",
3558 doi = "10.1103/PhysRevB.78.045202",
3559 publisher = "American Physical Society",
3560 notes = "threshold displacement comparison empirical and ab
3564 @Article{nordlund97,
3565 title = "Repulsive interatomic potentials calculated using
3566 Hartree-Fock and density-functional theory methods",
3567 journal = "Nucl. Instrum. Methods Phys. Res. B",
3574 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3575 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3576 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3577 notes = "repulsive ab initio potential",
3581 title = "Efficiency of ab-initio total energy calculations for
3582 metals and semiconductors using a plane-wave basis
3584 journal = "Comput. Mater. Sci.",
3591 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3592 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3593 author = "G. Kresse and J. Furthm{\"{u}}ller",
3598 title = "Projector augmented-wave method",
3599 author = "P. E. Bl{\"o}chl",
3600 journal = "Phys. Rev. B",
3603 pages = "17953--17979",
3607 doi = "10.1103/PhysRevB.50.17953",
3608 publisher = "American Physical Society",
3609 notes = "paw method",
3613 title = "Norm-Conserving Pseudopotentials",
3614 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3615 journal = "Phys. Rev. Lett.",
3618 pages = "1494--1497",
3622 doi = "10.1103/PhysRevLett.43.1494",
3623 publisher = "American Physical Society",
3624 notes = "norm-conserving pseudopotentials",
3627 @Article{vanderbilt90,
3628 title = "Soft self-consistent pseudopotentials in a generalized
3629 eigenvalue formalism",
3630 author = "David Vanderbilt",
3631 journal = "Phys. Rev. B",
3634 pages = "7892--7895",
3638 doi = "10.1103/PhysRevB.41.7892",
3639 publisher = "American Physical Society",
3640 notes = "vasp pseudopotentials",
3644 title = "Accurate and simple density functional for the
3645 electronic exchange energy: Generalized gradient
3647 author = "John P. Perdew and Yue Wang",
3648 journal = "Phys. Rev. B",
3651 pages = "8800--8802",
3655 doi = "10.1103/PhysRevB.33.8800",
3656 publisher = "American Physical Society",
3657 notes = "rapid communication gga",
3661 title = "Generalized gradient approximations for exchange and
3662 correlation: {A} look backward and forward",
3663 journal = "Physica B: Condensed Matter",
3670 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3671 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3672 author = "John P. Perdew",
3673 notes = "gga overview",
3677 title = "Atoms, molecules, solids, and surfaces: Applications
3678 of the generalized gradient approximation for exchange
3680 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3681 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3682 and Carlos Fiolhais",
3683 journal = "Phys. Rev. B",
3686 pages = "6671--6687",
3690 doi = "10.1103/PhysRevB.46.6671",
3691 publisher = "American Physical Society",
3692 notes = "gga pw91 (as in vasp)",
3695 @Article{baldereschi73,
3696 title = "Mean-Value Point in the Brillouin Zone",
3697 author = "A. Baldereschi",
3698 journal = "Phys. Rev. B",
3701 pages = "5212--5215",
3705 doi = "10.1103/PhysRevB.7.5212",
3706 publisher = "American Physical Society",
3707 notes = "mean value k point",
3711 title = "Ab initio pseudopotential calculations of dopant
3713 journal = "Comput. Mater. Sci.",
3720 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3721 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3722 author = "Jing Zhu",
3723 keywords = "TED (transient enhanced diffusion)",
3724 keywords = "Boron dopant",
3725 keywords = "Carbon dopant",
3726 keywords = "Defect",
3727 keywords = "ab initio pseudopotential method",
3728 keywords = "Impurity cluster",
3729 notes = "binding of c to si interstitial, c in si defects",
3733 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3735 title = "Si{C} buried layer formation by ion beam synthesis at
3739 journal = "Appl. Phys. Lett.",
3742 pages = "2646--2648",
3743 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3744 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3745 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3746 ELECTRON MICROSCOPY",
3747 URL = "http://link.aip.org/link/?APL/66/2646/1",
3748 doi = "10.1063/1.113112",
3749 notes = "precipitation mechanism by substitutional carbon, si
3750 self interstitials react with further implanted c",
3754 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3755 Kolodzey and A. Hairie",
3757 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3761 journal = "J. Appl. Phys.",
3764 pages = "4631--4633",
3765 keywords = "silicon compounds; precipitation; localised modes;
3766 semiconductor epitaxial layers; infrared spectra;
3767 Fourier transform spectra; thermal stability;
3769 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3770 doi = "10.1063/1.368703",
3771 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3775 author = "R Jones and B J Coomer and P R Briddon",
3776 title = "Quantum mechanical modelling of defects in
3778 journal = "J. Phys.: Condens. Matter",
3782 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3784 notes = "ab inito dft intro, vibrational modes, c defect in
3789 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3790 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3791 J. E. Greene and S. G. Bishop",
3793 title = "Carbon incorporation pathways and lattice sites in
3794 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3795 molecular-beam epitaxy",
3798 journal = "J. Appl. Phys.",
3801 pages = "5716--5727",
3802 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3803 doi = "10.1063/1.1465122",
3804 notes = "c substitutional incorporation pathway, dft and expt",
3808 title = "Dynamic properties of interstitial carbon and
3809 carbon-carbon pair defects in silicon",
3810 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3812 journal = "Phys. Rev. B",
3815 pages = "2188--2194",
3819 doi = "10.1103/PhysRevB.55.2188",
3820 publisher = "American Physical Society",
3821 notes = "ab initio c in si and di-carbon defect, no formation
3822 energies, different migration barriers and paths",
3826 title = "Interstitial carbon and the carbon-carbon pair in
3827 silicon: Semiempirical electronic-structure
3829 author = "Matthew J. Burnard and Gary G. DeLeo",
3830 journal = "Phys. Rev. B",
3833 pages = "10217--10225",
3837 doi = "10.1103/PhysRevB.47.10217",
3838 publisher = "American Physical Society",
3839 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3840 carbon defect, formation energies",
3844 title = "Electronic structure of interstitial carbon in
3846 author = "Morgan Besson and Gary G. DeLeo",
3847 journal = "Phys. Rev. B",
3850 pages = "4028--4033",
3854 doi = "10.1103/PhysRevB.43.4028",
3855 publisher = "American Physical Society",
3859 title = "Review of atomistic simulations of surface diffusion
3860 and growth on semiconductors",
3861 journal = "Comput. Mater. Sci.",
3866 note = "Proceedings of the Workshop on Virtual Molecular Beam
3869 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3870 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3871 author = "Efthimios Kaxiras",
3872 notes = "might contain c 100 db formation energy, overview md,
3873 tight binding, first principles",
3876 @Article{kaukonen98,
3877 title = "Effect of {N} and {B} doping on the growth of {CVD}
3879 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3881 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3882 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3884 journal = "Phys. Rev. B",
3887 pages = "9965--9970",
3891 doi = "10.1103/PhysRevB.57.9965",
3892 publisher = "American Physical Society",
3893 notes = "constrained conjugate gradient relaxation technique
3898 title = "Correlation between the antisite pair and the ${DI}$
3900 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3901 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3903 journal = "Phys. Rev. B",
3910 doi = "10.1103/PhysRevB.67.155203",
3911 publisher = "American Physical Society",
3915 title = "Production and recovery of defects in Si{C} after
3916 irradiation and deformation",
3917 journal = "J. Nucl. Mater.",
3920 pages = "1803--1808",
3924 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3925 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3926 author = "J. Chen and P. Jung and H. Klein",
3930 title = "Accumulation, dynamic annealing and thermal recovery
3931 of ion-beam-induced disorder in silicon carbide",
3932 journal = "Nucl. Instrum. Methods Phys. Res. B",
3939 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3940 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3941 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3944 @Article{bockstedte03,
3945 title = "Ab initio study of the migration of intrinsic defects
3947 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3949 journal = "Phys. Rev. B",
3956 doi = "10.1103/PhysRevB.68.205201",
3957 publisher = "American Physical Society",
3958 notes = "defect migration in sic",
3962 title = "Theoretical study of vacancy diffusion and
3963 vacancy-assisted clustering of antisites in Si{C}",
3964 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3966 journal = "Phys. Rev. B",
3973 doi = "10.1103/PhysRevB.68.155208",
3974 publisher = "American Physical Society",
3978 journal = "Telegrafiya i Telefoniya bez Provodov",
3982 author = "O. V. Lossev",
3986 title = "Luminous carborundum detector and detection effect and
3987 oscillations with crystals",
3988 journal = "Philosophical Magazine Series 7",
3991 pages = "1024--1044",
3993 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3994 author = "O. V. Lossev",
3998 journal = "Physik. Zeitschr.",
4002 author = "O. V. Lossev",
4006 journal = "Physik. Zeitschr.",
4010 author = "O. V. Lossev",
4014 journal = "Physik. Zeitschr.",
4018 author = "O. V. Lossev",
4022 title = "A note on carborundum",
4023 journal = "Electrical World",
4027 author = "H. J. Round",
4030 @Article{vashishath08,
4031 title = "Recent trends in silicon carbide device research",
4032 journal = "Mj. Int. J. Sci. Tech.",
4037 author = "Munish Vashishath and Ashoke K. Chatterjee",
4038 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4039 notes = "sic polytype electronic properties",
4043 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4045 title = "Growth and Properties of beta-Si{C} Single Crystals",
4048 journal = "Journal of Applied Physics",
4052 URL = "http://link.aip.org/link/?JAP/37/333/1",
4053 doi = "10.1063/1.1707837",
4054 notes = "sic melt growth",
4058 author = "A. E. van Arkel and J. H. de Boer",
4059 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4061 publisher = "WILEY-VCH Verlag GmbH",
4063 journal = "Z. Anorg. Chem.",
4066 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4067 doi = "10.1002/zaac.19251480133",
4068 notes = "van arkel apparatus",
4072 author = "K. Moers",
4074 journal = "Z. Anorg. Chem.",
4077 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4082 author = "J. T. Kendall",
4083 title = "Electronic Conduction in Silicon Carbide",
4086 journal = "The Journal of Chemical Physics",
4090 URL = "http://link.aip.org/link/?JCP/21/821/1",
4091 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4096 author = "J. A. Lely",
4098 journal = "Ber. Deut. Keram. Ges.",
4101 notes = "lely sublimation growth process",
4104 @Article{knippenberg63,
4105 author = "W. F. Knippenberg",
4107 journal = "Philips Res. Repts.",
4110 notes = "acheson process",
4113 @Article{hoffmann82,
4114 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4117 title = "Silicon carbide blue light emitting diodes with
4118 improved external quantum efficiency",
4121 journal = "Journal of Applied Physics",
4124 pages = "6962--6967",
4125 keywords = "light emitting diodes; silicon carbides; quantum
4126 efficiency; visible radiation; experimental data;
4127 epitaxy; fabrication; medium temperature; layers;
4128 aluminium; nitrogen; substrates; pn junctions;
4129 electroluminescence; spectra; current density;
4131 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4132 doi = "10.1063/1.330041",
4133 notes = "blue led, sublimation process",
4137 author = "Philip Neudeck",
4138 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4139 Road 44135 Cleveland OH",
4140 title = "Progress in silicon carbide semiconductor electronics
4142 journal = "Journal of Electronic Materials",
4143 publisher = "Springer Boston",
4145 keyword = "Chemistry and Materials Science",
4149 URL = "http://dx.doi.org/10.1007/BF02659688",
4150 note = "10.1007/BF02659688",
4152 notes = "sic data, advantages of 3c sic",
4155 @Article{bhatnagar93,
4156 author = "M. Bhatnagar and B. J. Baliga",
4157 journal = "Electron Devices, IEEE Transactions on",
4158 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4165 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4166 rectifiers;Si;SiC;breakdown voltages;drift region
4167 properties;output characteristics;power MOSFETs;power
4168 semiconductor devices;switching characteristics;thermal
4169 analysis;Schottky-barrier diodes;electric breakdown of
4170 solids;insulated gate field effect transistors;power
4171 transistors;semiconductor materials;silicon;silicon
4172 compounds;solid-state rectifiers;thermal analysis;",
4173 doi = "10.1109/16.199372",
4175 notes = "comparison 3c 6h sic and si devices",
4179 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4180 A. Powell and C. S. Salupo and L. G. Matus",
4181 journal = "Electron Devices, IEEE Transactions on",
4182 title = "Electrical properties of epitaxial 3{C}- and
4183 6{H}-Si{C} p-n junction diodes produced side-by-side on
4184 6{H}-Si{C} substrates",
4190 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4191 C;6H-SiC layers;6H-SiC substrates;CVD
4192 process;SiC;chemical vapor deposition;doping;electrical
4193 properties;epitaxial layers;light
4194 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4195 diodes;polytype;rectification characteristics;reverse
4196 leakage current;reverse voltages;temperature;leakage
4197 currents;power electronics;semiconductor
4198 diodes;semiconductor epitaxial layers;semiconductor
4199 growth;semiconductor materials;silicon
4200 compounds;solid-state rectifiers;substrates;vapour
4201 phase epitaxial growth;",
4202 doi = "10.1109/16.285038",
4204 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4209 author = "N. Schulze and D. L. Barrett and G. Pensl",
4211 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4212 single crystals by physical vapor transport",
4215 journal = "Applied Physics Letters",
4218 pages = "1632--1634",
4219 keywords = "silicon compounds; semiconductor materials;
4220 semiconductor growth; crystal growth from vapour;
4221 photoluminescence; Hall mobility",
4222 URL = "http://link.aip.org/link/?APL/72/1632/1",
4223 doi = "10.1063/1.121136",
4224 notes = "micropipe free 6h-sic pvt growth",
4228 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4230 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4233 journal = "Applied Physics Letters",
4237 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4238 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4239 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4240 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4242 URL = "http://link.aip.org/link/?APL/50/221/1",
4243 doi = "10.1063/1.97667",
4244 notes = "apb 3c-sic heteroepitaxy on si",
4247 @Article{shibahara86,
4248 title = "Surface morphology of cubic Si{C}(100) grown on
4249 Si(100) by chemical vapor deposition",
4250 journal = "Journal of Crystal Growth",
4257 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4258 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4259 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4261 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4264 @Article{desjardins96,
4265 author = "P. Desjardins and J. E. Greene",
4267 title = "Step-flow epitaxial growth on two-domain surfaces",
4270 journal = "Journal of Applied Physics",
4273 pages = "1423--1434",
4274 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4275 FILM GROWTH; SURFACE STRUCTURE",
4276 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4277 doi = "10.1063/1.360980",
4278 notes = "apb model",
4282 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4284 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4285 carbonization of silicon",
4288 journal = "Journal of Applied Physics",
4291 pages = "2070--2073",
4292 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4293 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4295 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4296 doi = "10.1063/1.360184",
4297 notes = "ssmbe of sic on si, lower temperatures",
4301 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4302 {MBE} using surface superstructure",
4303 journal = "Journal of Crystal Growth",
4310 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4311 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4312 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4313 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4314 notes = "gas source mbe of 3c-sic on 6h-sic",
4317 @Article{yoshinobu92,
4318 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4319 and Takashi Fuyuki and Hiroyuki Matsunami",
4321 title = "Lattice-matched epitaxial growth of single crystalline
4322 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4323 molecular beam epitaxy",
4326 journal = "Applied Physics Letters",
4330 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4331 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4332 INTERFACE STRUCTURE",
4333 URL = "http://link.aip.org/link/?APL/60/824/1",
4334 doi = "10.1063/1.107430",
4335 notes = "gas source mbe of 3c-sic on 6h-sic",
4338 @Article{yoshinobu90,
4339 title = "Atomic level control in gas source {MBE} growth of
4341 journal = "Journal of Crystal Growth",
4348 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4349 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4350 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4351 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4352 notes = "gas source mbe of 3c-sic on 3c-sic",
4356 title = "Atomic layer epitaxy controlled by surface
4357 superstructures in Si{C}",
4358 journal = "Thin Solid Films",
4365 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4366 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4367 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4369 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4374 title = "Microscopic mechanisms of accurate layer-by-layer
4375 growth of [beta]-Si{C}",
4376 journal = "Thin Solid Films",
4383 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4384 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4385 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4386 and S. Misawa and E. Sakuma and S. Yoshida",
4387 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4392 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4394 title = "Effects of gas flow ratio on silicon carbide thin film
4395 growth mode and polytype formation during gas-source
4396 molecular beam epitaxy",
4399 journal = "Applied Physics Letters",
4402 pages = "2851--2853",
4403 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4404 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4405 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4407 URL = "http://link.aip.org/link/?APL/65/2851/1",
4408 doi = "10.1063/1.112513",
4409 notes = "gas source mbe of 6h-sic on 6h-sic",
4413 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4414 title = "Heterointerface Control and Epitaxial Growth of
4415 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4416 publisher = "WILEY-VCH Verlag",
4418 journal = "physica status solidi (b)",
4421 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4426 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4427 journal = "Journal of Crystal Growth",
4434 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4435 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4436 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4437 keywords = "Reflection high-energy electron diffraction (RHEED)",
4438 keywords = "Scanning electron microscopy (SEM)",
4439 keywords = "Silicon carbide",
4440 keywords = "Silicon",
4441 keywords = "Island growth",
4442 notes = "lower temperature, 550-700",
4445 @Article{hatayama95,
4446 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4447 on Si using hydrocarbon radicals by gas source
4448 molecular beam epitaxy",
4449 journal = "Journal of Crystal Growth",
4456 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4457 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4458 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4459 and Hiroyuki Matsunami",
4463 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4464 title = "The Preference of Silicon Carbide for Growth in the
4465 Metastable Cubic Form",
4466 journal = "Journal of the American Ceramic Society",
4469 publisher = "Blackwell Publishing Ltd",
4471 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4472 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4473 pages = "2630--2633",
4474 keywords = "silicon carbide, crystal growth, crystal structure,
4475 calculations, stability",
4477 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4478 polytype dft calculation refs",
4481 @Article{allendorf91,
4482 title = "The adsorption of {H}-atoms on polycrystalline
4483 [beta]-silicon carbide",
4484 journal = "Surface Science",
4491 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4492 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4493 author = "Mark D. Allendorf and Duane A. Outka",
4494 notes = "h adsorption on 3c-sic",
4497 @Article{eaglesham93,
4498 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4499 D. P. Adams and S. M. Yalisove",
4501 title = "Effect of {H} on Si molecular-beam epitaxy",
4504 journal = "Journal of Applied Physics",
4507 pages = "6615--6618",
4508 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4509 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4510 DIFFUSION; ADSORPTION",
4511 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4512 doi = "10.1063/1.355101",
4513 notes = "h incorporation on si surface, lower surface
4518 author = "Ronald C. Newman",
4519 title = "Carbon in Crystalline Silicon",
4520 journal = "MRS Online Proceedings Library",
4525 doi = "10.1557/PROC-59-403",
4526 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4527 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4531 title = "The diffusivity of carbon in silicon",
4532 journal = "Journal of Physics and Chemistry of Solids",
4539 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4540 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4541 author = "R. C. Newman and J. Wakefield",
4542 notes = "diffusivity of substitutional c in si",
4546 author = "U. Gösele",
4547 title = "The Role of Carbon and Point Defects in Silicon",
4548 journal = "MRS Online Proceedings Library",
4553 doi = "10.1557/PROC-59-419",
4554 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4555 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4558 @Article{mukashev82,
4559 title = "Defects in Carbon-Implanted Silicon",
4560 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4561 Fukuoka and Haruo Saito",
4562 journal = "Japanese Journal of Applied Physics",
4564 number = "Part 1, No. 2",
4568 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4569 doi = "10.1143/JJAP.21.399",
4570 publisher = "The Japan Society of Applied Physics",
4574 title = "Convergence of supercell calculations for point
4575 defects in semiconductors: Vacancy in silicon",
4576 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4578 journal = "Phys. Rev. B",
4581 pages = "1318--1325",
4585 doi = "10.1103/PhysRevB.58.1318",
4586 publisher = "American Physical Society",
4587 notes = "convergence k point supercell size, vacancy in
4592 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4593 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4594 K{\"{o}}gler and W. Skorupa",
4596 title = "Spectroscopic characterization of phases formed by
4597 high-dose carbon ion implantation in silicon",
4600 journal = "Journal of Applied Physics",
4603 pages = "2978--2984",
4604 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4605 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4606 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4607 DEPENDENCE; PRECIPITATES; ANNEALING",
4608 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4609 doi = "10.1063/1.358714",
4612 @Article{romano-rodriguez96,
4613 title = "Detailed analysis of [beta]-Si{C} formation by high
4614 dose carbon ion implantation in silicon",
4615 journal = "Materials Science and Engineering B",
4620 note = "European Materials Research Society 1995 Spring
4621 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4622 Oxygen in Silicon and in Other Elemental
4625 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4626 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4627 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4628 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4630 keywords = "Silicon",
4631 keywords = "Ion implantation",
4632 notes = "incoherent 3c-sic precipitate",