2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 journal = "Phys. Rev. B",
1540 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
1541 publisher = "American Physical Society",
1542 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1543 K. N. Lindner and W. G. Schmidt and E. Rauls",
1544 title = "Combined \textit{ab initio} and classical potential
1545 simulation study on silicon carbide precipitation in
1551 doi = "10.1103/PhysRevB.84.064126",
1553 abstract = "Atomistic simulations on the silicon carbide
1554 precipitation in bulk silicon employing both, classical
1555 potential and first-principles methods are presented.
1556 The calculations aim at a comprehensive, microscopic
1557 understanding of the precipitation mechanism in the
1558 context of controversial discussions in the literature.
1559 For the quantum-mechanical treatment, basic processes
1560 assumed in the precipitation process are calculated in
1561 feasible systems of small size. The migration mechanism
1562 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1563 1 0> self-interstitial in otherwise defect-free silicon
1564 are investigated using density functional theory
1565 calculations. The influence of a nearby vacancy,
1566 another carbon interstitial and a substitutional defect
1567 as well as a silicon self-interstitial has been
1568 investigated systematically. Interactions of various
1569 combinations of defects have been characterized
1570 including a couple of selected migration pathways
1571 within these configurations. Almost all of the
1572 investigated pairs of defects tend to agglomerate
1573 allowing for a reduction in strain. The formation of
1574 structures involving strong carbon-carbon bonds turns
1575 out to be very unlikely. In contrast, substitutional
1576 carbon occurs in all probability. A long range capture
1577 radius has been observed for pairs of interstitial
1578 carbon as well as interstitial carbon and vacancies. A
1579 rather small capture radius is predicted for
1580 substitutional carbon and silicon self-interstitials.
1581 Initial assumptions regarding the precipitation
1582 mechanism of silicon carbide in bulk silicon are
1583 established and conformability to experimental findings
1584 is discussed. Furthermore, results of the accurate
1585 first-principles calculations on defects and carbon
1586 diffusion in silicon are compared to results of
1587 classical potential simulations revealing significant
1588 limitations of the latter method. An approach to work
1589 around this problem is proposed. Finally, results of
1590 the classical potential molecular dynamics simulations
1591 of large systems are examined, which reinforce previous
1592 assumptions and give further insight into basic
1593 processes involved in the silicon carbide transition.",
1597 author = "J. K. N. Lindner and A. Frohnwieser and B.
1598 Rauschenbach and B. Stritzker",
1599 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1601 journal = "MRS Proc.",
1606 doi = "10.1557/PROC-354-171",
1607 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1608 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1609 notes = "first time ibs at moderate temperatures",
1613 title = "Formation of buried epitaxial silicon carbide layers
1614 in silicon by ion beam synthesis",
1615 journal = "Mater. Chem. Phys.",
1622 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1623 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1624 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1625 Götz and A. Frohnwieser and B. Rauschenbach and B.
1627 notes = "dose window",
1630 @Article{calcagno96,
1631 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1633 journal = "Nucl. Instrum. Methods Phys. Res. B",
1638 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1639 New Trends in Ion Beam Processing of Materials",
1641 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1642 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1643 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1644 Grimaldi and P. Musumeci",
1645 notes = "dose window, graphitic bonds",
1649 title = "Mechanisms of Si{C} Formation in the Ion Beam
1650 Synthesis of 3{C}-Si{C} Layers in Silicon",
1651 journal = "Mater. Sci. Forum",
1656 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1657 URL = "http://www.scientific.net/MSF.264-268.215",
1658 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1659 notes = "intermediate temperature for sharp interface + good
1664 title = "Controlling the density distribution of Si{C}
1665 nanocrystals for the ion beam synthesis of buried Si{C}
1667 journal = "Nucl. Instrum. Methods Phys. Res. B",
1674 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1675 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1676 author = "J. K. N. Lindner and B. Stritzker",
1677 notes = "two-step implantation process",
1680 @Article{lindner99_2,
1681 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1683 journal = "Nucl. Instrum. Methods Phys. Res. B",
1689 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1690 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1691 author = "J. K. N. Lindner and B. Stritzker",
1692 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1696 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1697 Basic physical processes",
1698 journal = "Nucl. Instrum. Methods Phys. Res. B",
1705 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1706 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1707 author = "J{\"{o}}rg K. N. Lindner",
1711 title = "High-dose carbon implantations into silicon:
1712 fundamental studies for new technological tricks",
1713 author = "J. K. N. Lindner",
1714 journal = "Appl. Phys. A",
1718 doi = "10.1007/s00339-002-2062-8",
1719 notes = "ibs, burried sic layers",
1723 title = "On the balance between ion beam induced nanoparticle
1724 formation and displacive precipitate resolution in the
1726 journal = "Mater. Sci. Eng., C",
1731 note = "Current Trends in Nanoscience - from Materials to
1734 doi = "DOI: 10.1016/j.msec.2005.09.099",
1735 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1736 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1738 notes = "c int diffusion barrier",
1742 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1743 application in buffer layer for Ga{N} epitaxial
1745 journal = "Appl. Surf. Sci.",
1750 note = "APHYS'03 Special Issue",
1752 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1753 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1754 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1755 and S. Nishio and K. Yasuda and Y. Ishigami",
1756 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1759 @Article{yamamoto04,
1760 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1761 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1762 implantation into Si(1 1 1) substrate",
1763 journal = "J. Cryst. Growth",
1768 note = "Proceedings of the 11th Biennial (US) Workshop on
1769 Organometallic Vapor Phase Epitaxy (OMVPE)",
1771 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1772 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1773 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1774 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1775 notes = "gan on 3c-sic",
1779 title = "Substrates for gallium nitride epitaxy",
1780 journal = "Mater. Sci. Eng., R",
1787 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1788 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1789 author = "L. Liu and J. H. Edgar",
1790 notes = "gan substrates",
1793 @Article{takeuchi91,
1794 title = "Growth of single crystalline Ga{N} film on Si
1795 substrate using 3{C}-Si{C} as an intermediate layer",
1796 journal = "J. Cryst. Growth",
1803 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1804 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1805 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1806 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1807 notes = "gan on 3c-sic (first time?)",
1811 author = "B. J. Alder and T. E. Wainwright",
1812 title = "Phase Transition for a Hard Sphere System",
1815 journal = "J. Chem. Phys.",
1818 pages = "1208--1209",
1819 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1820 doi = "10.1063/1.1743957",
1824 author = "B. J. Alder and T. E. Wainwright",
1825 title = "Studies in Molecular Dynamics. {I}. General Method",
1828 journal = "J. Chem. Phys.",
1832 URL = "http://link.aip.org/link/?JCP/31/459/1",
1833 doi = "10.1063/1.1730376",
1836 @Article{horsfield96,
1837 title = "Bond-order potentials: Theory and implementation",
1838 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1839 D. G. Pettifor and M. Aoki",
1840 journal = "Phys. Rev. B",
1843 pages = "12694--12712",
1847 doi = "10.1103/PhysRevB.53.12694",
1848 publisher = "American Physical Society",
1852 title = "Empirical chemical pseudopotential theory of molecular
1853 and metallic bonding",
1854 author = "G. C. Abell",
1855 journal = "Phys. Rev. B",
1858 pages = "6184--6196",
1862 doi = "10.1103/PhysRevB.31.6184",
1863 publisher = "American Physical Society",
1866 @Article{tersoff_si1,
1867 title = "New empirical model for the structural properties of
1869 author = "J. Tersoff",
1870 journal = "Phys. Rev. Lett.",
1877 doi = "10.1103/PhysRevLett.56.632",
1878 publisher = "American Physical Society",
1882 title = "Development of a many-body Tersoff-type potential for
1884 author = "Brian W. Dodson",
1885 journal = "Phys. Rev. B",
1888 pages = "2795--2798",
1892 doi = "10.1103/PhysRevB.35.2795",
1893 publisher = "American Physical Society",
1896 @Article{tersoff_si2,
1897 title = "New empirical approach for the structure and energy of
1899 author = "J. Tersoff",
1900 journal = "Phys. Rev. B",
1903 pages = "6991--7000",
1907 doi = "10.1103/PhysRevB.37.6991",
1908 publisher = "American Physical Society",
1911 @Article{tersoff_si3,
1912 title = "Empirical interatomic potential for silicon with
1913 improved elastic properties",
1914 author = "J. Tersoff",
1915 journal = "Phys. Rev. B",
1918 pages = "9902--9905",
1922 doi = "10.1103/PhysRevB.38.9902",
1923 publisher = "American Physical Society",
1927 title = "Empirical Interatomic Potential for Carbon, with
1928 Applications to Amorphous Carbon",
1929 author = "J. Tersoff",
1930 journal = "Phys. Rev. Lett.",
1933 pages = "2879--2882",
1937 doi = "10.1103/PhysRevLett.61.2879",
1938 publisher = "American Physical Society",
1942 title = "Modeling solid-state chemistry: Interatomic potentials
1943 for multicomponent systems",
1944 author = "J. Tersoff",
1945 journal = "Phys. Rev. B",
1948 pages = "5566--5568",
1952 doi = "10.1103/PhysRevB.39.5566",
1953 publisher = "American Physical Society",
1957 title = "Carbon defects and defect reactions in silicon",
1958 author = "J. Tersoff",
1959 journal = "Phys. Rev. Lett.",
1962 pages = "1757--1760",
1966 doi = "10.1103/PhysRevLett.64.1757",
1967 publisher = "American Physical Society",
1971 title = "Point defects and dopant diffusion in silicon",
1972 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1973 journal = "Rev. Mod. Phys.",
1980 doi = "10.1103/RevModPhys.61.289",
1981 publisher = "American Physical Society",
1985 title = "Silicon carbide: synthesis and processing",
1986 journal = "Nucl. Instrum. Methods Phys. Res. B",
1991 note = "Radiation Effects in Insulators",
1993 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1994 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1995 author = "W. Wesch",
1999 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
2000 Palmour and J. A. Edmond",
2001 journal = "Proc. IEEE",
2002 title = "Thin film deposition and microelectronic and
2003 optoelectronic device fabrication and characterization
2004 in monocrystalline alpha and beta silicon carbide",
2010 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2011 diode;SiC;dry etching;electrical
2012 contacts;etching;impurity incorporation;optoelectronic
2013 device fabrication;solid-state devices;surface
2014 chemistry;Schottky effect;Schottky gate field effect
2015 transistors;Schottky-barrier
2016 diodes;etching;heterojunction bipolar
2017 transistors;insulated gate field effect
2018 transistors;light emitting diodes;semiconductor
2019 materials;semiconductor thin films;silicon compounds;",
2020 doi = "10.1109/5.90132",
2022 notes = "sic growth methods",
2026 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2027 Lin and B. Sverdlov and M. Burns",
2029 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2030 ZnSe-based semiconductor device technologies",
2033 journal = "J. Appl. Phys.",
2036 pages = "1363--1398",
2037 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2038 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2039 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2041 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2042 doi = "10.1063/1.358463",
2043 notes = "sic intro, properties",
2047 author = "Noch Unbekannt",
2048 title = "How to find references",
2049 journal = "Journal of Applied References",
2056 title = "Atomistic simulation of thermomechanical properties of
2058 author = "Meijie Tang and Sidney Yip",
2059 journal = "Phys. Rev. B",
2062 pages = "15150--15159",
2065 doi = "10.1103/PhysRevB.52.15150",
2066 notes = "modified tersoff, scale cutoff with volume, promising
2067 tersoff reparametrization",
2068 publisher = "American Physical Society",
2072 title = "Silicon carbide as a new {MEMS} technology",
2073 journal = "Seonsor. Actuator. A",
2079 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2080 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2081 author = "Pasqualina M. Sarro",
2083 keywords = "Silicon carbide",
2084 keywords = "Micromachining",
2085 keywords = "Mechanical stress",
2089 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2090 semiconductor for high-temperature applications: {A}
2092 journal = "Solid-State Electron.",
2095 pages = "1409--1422",
2098 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2099 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2100 author = "J. B. Casady and R. W. Johnson",
2101 notes = "sic intro",
2104 @Article{giancarli98,
2105 title = "Design requirements for Si{C}/Si{C} composites
2106 structural material in fusion power reactor blankets",
2107 journal = "Fusion Eng. Des.",
2113 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2114 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2115 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2116 Marois and N. B. Morley and J. F. Salavy",
2120 title = "Electrical and optical characterization of Si{C}",
2121 journal = "Physica B",
2127 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2128 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2129 author = "G. Pensl and W. J. Choyke",
2133 title = "Investigation of growth processes of ingots of silicon
2134 carbide single crystals",
2135 journal = "J. Cryst. Growth",
2140 notes = "modified lely process",
2142 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2143 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2144 author = "Yu. M. Tairov and V. F. Tsvetkov",
2148 title = "General principles of growing large-size single
2149 crystals of various silicon carbide polytypes",
2150 journal = "J. Cryst. Growth",
2157 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2158 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2159 author = "Yu.M. Tairov and V. F. Tsvetkov",
2163 title = "Si{C} boule growth by sublimation vapor transport",
2164 journal = "J. Cryst. Growth",
2171 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2173 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2174 R. H. Hopkins and W. J. Choyke",
2178 title = "Growth of large Si{C} single crystals",
2179 journal = "J. Cryst. Growth",
2186 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2187 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2188 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2189 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2194 title = "Control of polytype formation by surface energy
2195 effects during the growth of Si{C} monocrystals by the
2196 sublimation method",
2197 journal = "J. Cryst. Growth",
2204 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2205 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2206 author = "R. A. Stein and P. Lanig",
2207 notes = "6h and 4h, sublimation technique",
2211 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2214 title = "Production of large-area single-crystal wafers of
2215 cubic Si{C} for semiconductor devices",
2218 journal = "Appl. Phys. Lett.",
2222 keywords = "silicon carbides; layers; chemical vapor deposition;
2224 URL = "http://link.aip.org/link/?APL/42/460/1",
2225 doi = "10.1063/1.93970",
2226 notes = "cvd of 3c-sic on si, sic buffer layer",
2230 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2231 and Hiroyuki Matsunami",
2233 title = "Epitaxial growth and electric characteristics of cubic
2237 journal = "J. Appl. Phys.",
2240 pages = "4889--4893",
2241 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2242 doi = "10.1063/1.338355",
2243 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2248 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2250 title = "Growth and Characterization of Cubic Si{C}
2251 Single-Crystal Films on Si",
2254 journal = "J. Electrochem. Soc.",
2257 pages = "1558--1565",
2258 keywords = "semiconductor materials; silicon compounds; carbon
2259 compounds; crystal morphology; electron mobility",
2260 URL = "http://link.aip.org/link/?JES/134/1558/1",
2261 doi = "10.1149/1.2100708",
2262 notes = "blue light emitting diodes (led)",
2265 @Article{powell87_2,
2266 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2267 C. M. Chorey and T. T. Cheng and P. Pirouz",
2269 title = "Improved beta-Si{C} heteroepitaxial films using
2270 off-axis Si substrates",
2273 journal = "Appl. Phys. Lett.",
2277 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2278 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2279 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2280 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2281 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2282 URL = "http://link.aip.org/link/?APL/51/823/1",
2283 doi = "10.1063/1.98824",
2284 notes = "improved sic on off-axis si substrates, reduced apbs",
2288 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2289 journal = "J. Cryst. Growth",
2296 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2297 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2298 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2300 notes = "step-controlled epitaxy model",
2304 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2305 and Hiroyuki Matsunami",
2306 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2310 journal = "J. Appl. Phys.",
2314 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2315 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2317 URL = "http://link.aip.org/link/?JAP/73/726/1",
2318 doi = "10.1063/1.353329",
2319 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2322 @Article{powell90_2,
2323 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2324 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2325 Yoganathan and J. Yang and P. Pirouz",
2327 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2328 vicinal (0001) 6{H}-Si{C} wafers",
2331 journal = "Appl. Phys. Lett.",
2334 pages = "1442--1444",
2335 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2336 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2337 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2338 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2339 URL = "http://link.aip.org/link/?APL/56/1442/1",
2340 doi = "10.1063/1.102492",
2341 notes = "cvd of 6h-sic on 6h-sic",
2345 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2347 title = "Chemical vapor deposition and characterization of
2348 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2352 journal = "J. Appl. Phys.",
2355 pages = "2672--2679",
2356 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2357 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2358 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2359 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2360 PHASE EPITAXY; CRYSTAL ORIENTATION",
2361 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2362 doi = "10.1063/1.341608",
2366 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2367 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2368 Yoganathan and J. Yang and P. Pirouz",
2370 title = "Growth of improved quality 3{C}-Si{C} films on
2371 6{H}-Si{C} substrates",
2374 journal = "Appl. Phys. Lett.",
2377 pages = "1353--1355",
2378 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2379 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2380 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2382 URL = "http://link.aip.org/link/?APL/56/1353/1",
2383 doi = "10.1063/1.102512",
2384 notes = "cvd of 3c-sic on 6h-sic",
2388 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2389 Rozgonyi and K. L. More",
2391 title = "An examination of double positioning boundaries and
2392 interface misfit in beta-Si{C} films on alpha-Si{C}
2396 journal = "J. Appl. Phys.",
2399 pages = "2645--2650",
2400 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2401 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2402 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2403 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2404 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2405 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2406 doi = "10.1063/1.341004",
2410 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2411 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2412 and W. J. Choyke and L. Clemen and M. Yoganathan",
2414 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2415 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2418 journal = "Appl. Phys. Lett.",
2422 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2423 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2424 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2425 URL = "http://link.aip.org/link/?APL/59/333/1",
2426 doi = "10.1063/1.105587",
2430 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2431 Thokala and M. J. Loboda",
2433 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2434 films on 6{H}-Si{C} by chemical vapor deposition from
2438 journal = "J. Appl. Phys.",
2441 pages = "1271--1273",
2442 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2443 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2445 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2446 doi = "10.1063/1.360368",
2447 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2451 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2452 properties of its p-n junction",
2453 journal = "J. Cryst. Growth",
2460 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2461 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2462 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2464 notes = "first time ssmbe of 3c-sic on 6h-sic",
2468 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2469 [alpha]-Si{C}(0001) at low temperatures by solid-source
2470 molecular beam epitaxy",
2471 journal = "J. Cryst. Growth",
2477 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2478 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2479 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2480 Schr{\"{o}}ter and W. Richter",
2481 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2484 @Article{fissel95_apl,
2485 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2487 title = "Low-temperature growth of Si{C} thin films on Si and
2488 6{H}--Si{C} by solid-source molecular beam epitaxy",
2491 journal = "Appl. Phys. Lett.",
2494 pages = "3182--3184",
2495 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2497 URL = "http://link.aip.org/link/?APL/66/3182/1",
2498 doi = "10.1063/1.113716",
2499 notes = "mbe 3c-sic on si and 6h-sic",
2503 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2504 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2506 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2507 migration enhanced epitaxy controlled to an atomic
2508 level using surface superstructures",
2511 journal = "Appl. Phys. Lett.",
2514 pages = "1204--1206",
2515 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2516 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2518 URL = "http://link.aip.org/link/?APL/68/1204/1",
2519 doi = "10.1063/1.115969",
2520 notes = "ss mbe sic, superstructure, reconstruction",
2524 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2525 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2526 C. M. Bertoni and A. Catellani",
2527 journal = "Phys. Rev. Lett.",
2534 doi = "10.1103/PhysRevLett.91.136101",
2535 publisher = "American Physical Society",
2536 notes = "dft calculations mbe sic growth",
2540 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2542 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2546 journal = "Appl. Phys. Lett.",
2550 URL = "http://link.aip.org/link/?APL/18/509/1",
2551 doi = "10.1063/1.1653516",
2552 notes = "first time sic by ibs, follow cites for precipitation
2557 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2558 and E. V. Lubopytova",
2559 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2560 by ion implantation",
2561 publisher = "Taylor \& Francis",
2563 journal = "Radiat. Eff.",
2567 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2568 notes = "3c-sic for different temperatures, amorphous, poly,
2569 single crystalline",
2572 @Article{akimchenko80,
2573 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2574 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2575 title = "Structure and optical properties of silicon implanted
2576 by high doses of 70 and 310 ke{V} carbon ions",
2577 publisher = "Taylor \& Francis",
2579 journal = "Radiat. Eff.",
2583 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2584 notes = "3c-sic nucleation by thermal spikes",
2588 title = "Structure and annealing properties of silicon carbide
2589 thin layers formed by implantation of carbon ions in
2591 journal = "Thin Solid Films",
2598 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2599 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2600 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2605 title = "Characteristics of the synthesis of [beta]-Si{C} by
2606 the implantation of carbon ions into silicon",
2607 journal = "Thin Solid Films",
2614 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2615 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2616 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2621 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2622 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2623 Chater and J. A. Iulner and J. Davis",
2624 title = "Formation mechanisms and structures of insulating
2625 compounds formed in silicon by ion beam synthesis",
2626 publisher = "Taylor \& Francis",
2628 journal = "Radiat. Eff.",
2632 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2633 notes = "ibs, comparison with sio and sin, higher temp or time,
2634 no c redistribution",
2638 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2639 J. Davis and G. E. Celler",
2641 title = "Formation of buried layers of beta-Si{C} using ion
2642 beam synthesis and incoherent lamp annealing",
2645 journal = "Appl. Phys. Lett.",
2648 pages = "2242--2244",
2649 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2650 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2651 URL = "http://link.aip.org/link/?APL/51/2242/1",
2652 doi = "10.1063/1.98953",
2653 notes = "nice tem images, sic by ibs",
2657 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2658 and M. Olivier and A. M. Papon and G. Rolland",
2660 title = "High-temperature ion beam synthesis of cubic Si{C}",
2663 journal = "J. Appl. Phys.",
2666 pages = "2908--2912",
2667 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2668 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2669 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2670 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2671 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2672 REACTIONS; MONOCRYSTALS",
2673 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2674 doi = "10.1063/1.346092",
2675 notes = "triple energy implantation to overcome high annealing
2680 author = "R. I. Scace and G. A. Slack",
2682 title = "Solubility of Carbon in Silicon and Germanium",
2685 journal = "J. Chem. Phys.",
2688 pages = "1551--1555",
2689 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2690 doi = "10.1063/1.1730236",
2691 notes = "solubility of c in c-si, si-c phase diagram",
2695 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2697 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2698 Laboratories Eindhoven Netherlands Eindhoven
2700 title = "Boron implantations in silicon: {A} comparison of
2701 charge carrier and boron concentration profiles",
2702 journal = "Appl. Phys. A",
2703 publisher = "Springer Berlin / Heidelberg",
2705 keyword = "Physics and Astronomy",
2709 URL = "http://dx.doi.org/10.1007/BF00884267",
2710 note = "10.1007/BF00884267",
2712 notes = "first time ted (only for boron?)",
2716 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2719 title = "Rapid annealing and the anomalous diffusion of ion
2720 implanted boron into silicon",
2723 journal = "Appl. Phys. Lett.",
2727 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2728 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2729 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2730 URL = "http://link.aip.org/link/?APL/50/416/1",
2731 doi = "10.1063/1.98160",
2732 notes = "ted of boron in si",
2736 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2739 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2740 time, and matrix dependence of atomic and electrical
2744 journal = "J. Appl. Phys.",
2747 pages = "6191--6198",
2748 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2749 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2750 CRYSTALS; AMORPHIZATION",
2751 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2752 doi = "10.1063/1.346910",
2753 notes = "ted of boron in si",
2757 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2758 F. W. Saris and W. Vandervorst",
2760 title = "Role of {C} and {B} clusters in transient diffusion of
2764 journal = "Appl. Phys. Lett.",
2767 pages = "1150--1152",
2768 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2769 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2771 URL = "http://link.aip.org/link/?APL/68/1150/1",
2772 doi = "10.1063/1.115706",
2773 notes = "suppression of transient enhanced diffusion (ted)",
2777 title = "Implantation and transient boron diffusion: the role
2778 of the silicon self-interstitial",
2779 journal = "Nucl. Instrum. Methods Phys. Res. B",
2784 note = "Selected Papers of the Tenth International Conference
2785 on Ion Implantation Technology (IIT '94)",
2787 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2788 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2789 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2794 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2795 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2796 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2799 title = "Physical mechanisms of transient enhanced dopant
2800 diffusion in ion-implanted silicon",
2803 journal = "J. Appl. Phys.",
2806 pages = "6031--6050",
2807 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2808 doi = "10.1063/1.364452",
2809 notes = "ted, transient enhanced diffusion, c silicon trap",
2813 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2815 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2816 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2819 journal = "Appl. Phys. Lett.",
2823 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2824 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2825 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2827 URL = "http://link.aip.org/link/?APL/64/324/1",
2828 doi = "10.1063/1.111195",
2829 notes = "beta sic nano crystals in si, mbe, annealing",
2833 author = "Richard A. Soref",
2835 title = "Optical band gap of the ternary semiconductor Si[sub 1
2836 - x - y]Ge[sub x]{C}[sub y]",
2839 journal = "J. Appl. Phys.",
2842 pages = "2470--2472",
2843 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2844 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2846 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2847 doi = "10.1063/1.349403",
2848 notes = "band gap of strained si by c",
2852 author = "E Kasper",
2853 title = "Superlattices of group {IV} elements, a new
2854 possibility to produce direct band gap material",
2855 journal = "Phys. Scr.",
2858 URL = "http://stacks.iop.org/1402-4896/T35/232",
2860 notes = "superlattices, convert indirect band gap into a
2865 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2868 title = "Growth and strain compensation effects in the ternary
2869 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2872 journal = "Appl. Phys. Lett.",
2875 pages = "3033--3035",
2876 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2877 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2878 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2879 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2881 URL = "http://link.aip.org/link/?APL/60/3033/1",
2882 doi = "10.1063/1.106774",
2886 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2889 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2893 journal = "J. Vac. Sci. Technol. B",
2896 pages = "1064--1068",
2897 location = "Ottawa (Canada)",
2898 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2899 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2900 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2901 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2902 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2903 doi = "10.1116/1.587008",
2904 notes = "substitutional c in si by mbe",
2907 @Article{powell93_2,
2908 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2909 of the ternary system",
2910 journal = "J. Cryst. Growth",
2917 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2918 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2919 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2924 author = "H. J. Osten",
2925 title = "Modification of Growth Modes in Lattice-Mismatched
2926 Epitaxial Systems: Si/Ge",
2927 journal = "phys. status solidi (a)",
2930 publisher = "WILEY-VCH Verlag",
2932 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2933 doi = "10.1002/pssa.2211450203",
2938 @Article{dietrich94,
2939 title = "Lattice distortion in a strain-compensated
2940 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2941 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2942 Methfessel and P. Zaumseil",
2943 journal = "Phys. Rev. B",
2946 pages = "17185--17190",
2950 doi = "10.1103/PhysRevB.49.17185",
2951 publisher = "American Physical Society",
2955 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2957 title = "Growth of an inverse tetragonal distorted SiGe layer
2958 on Si(001) by adding small amounts of carbon",
2961 journal = "Appl. Phys. Lett.",
2964 pages = "3440--3442",
2965 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2966 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2967 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2969 URL = "http://link.aip.org/link/?APL/64/3440/1",
2970 doi = "10.1063/1.111235",
2971 notes = "inversely strained / distorted heterostructure",
2975 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2976 LeGoues and J. C. Tsang and F. Cardone",
2978 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2979 molecular beam epitaxy",
2982 journal = "Appl. Phys. Lett.",
2986 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2987 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2988 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2989 FILM GROWTH; MICROSTRUCTURE",
2990 URL = "http://link.aip.org/link/?APL/60/356/1",
2991 doi = "10.1063/1.106655",
2995 author = "H. J. Osten and J. Griesche and S. Scalese",
2997 title = "Substitutional carbon incorporation in epitaxial
2998 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2999 molecular beam epitaxy",
3002 journal = "Appl. Phys. Lett.",
3006 keywords = "molecular beam epitaxial growth; semiconductor growth;
3007 wide band gap semiconductors; interstitials; silicon
3009 URL = "http://link.aip.org/link/?APL/74/836/1",
3010 doi = "10.1063/1.123384",
3011 notes = "substitutional c in si by mbe",
3015 author = "M. Born and R. Oppenheimer",
3016 title = "Zur Quantentheorie der Molekeln",
3017 journal = "Ann. Phys. (Leipzig)",
3020 publisher = "WILEY-VCH Verlag",
3022 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3023 doi = "10.1002/andp.19273892002",
3028 @Article{hohenberg64,
3029 title = "Inhomogeneous Electron Gas",
3030 author = "P. Hohenberg and W. Kohn",
3031 journal = "Phys. Rev.",
3034 pages = "B864--B871",
3038 doi = "10.1103/PhysRev.136.B864",
3039 publisher = "American Physical Society",
3040 notes = "density functional theory, dft",
3044 title = "The calculation of atomic fields",
3045 author = "L. H. Thomas",
3046 journal = "Proc. Cambridge Philos. Soc.",
3050 doi = "10.1017/S0305004100011683",
3055 author = "E. Fermi",
3056 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3064 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3065 Central Field. Part {I}. Theory and Methods",
3066 author = "D. R. Hartree",
3067 journal = "Proc. Cambridge Philos. Soc.",
3071 doi = "10.1017/S0305004100011919",
3075 title = "The Theory of Complex Spectra",
3076 author = "J. C. Slater",
3077 journal = "Phys. Rev.",
3080 pages = "1293--1322",
3084 doi = "10.1103/PhysRev.34.1293",
3085 publisher = "American Physical Society",
3089 title = "Self-Consistent Equations Including Exchange and
3090 Correlation Effects",
3091 author = "W. Kohn and L. J. Sham",
3092 journal = "Phys. Rev.",
3095 pages = "A1133--A1138",
3099 doi = "10.1103/PhysRev.140.A1133",
3100 publisher = "American Physical Society",
3101 notes = "dft, exchange and correlation",
3105 title = "Density Functional and Density Matrix Method Scaling
3106 Linearly with the Number of Atoms",
3108 journal = "Phys. Rev. Lett.",
3111 pages = "3168--3171",
3115 doi = "10.1103/PhysRevLett.76.3168",
3116 publisher = "American Physical Society",
3120 title = "Edge Electron Gas",
3121 author = "Walter Kohn and Ann E. Mattsson",
3122 journal = "Phys. Rev. Lett.",
3125 pages = "3487--3490",
3129 doi = "10.1103/PhysRevLett.81.3487",
3130 publisher = "American Physical Society",
3134 title = "Nobel Lecture: Electronic structure of matter---wave
3135 functions and density functionals",
3137 journal = "Rev. Mod. Phys.",
3140 pages = "1253--1266",
3144 doi = "10.1103/RevModPhys.71.1253",
3145 publisher = "American Physical Society",
3149 title = "Iterative minimization techniques for ab initio
3150 total-energy calculations: molecular dynamics and
3151 conjugate gradients",
3152 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3153 Arias and J. D. Joannopoulos",
3154 journal = "Rev. Mod. Phys.",
3157 pages = "1045--1097",
3161 doi = "10.1103/RevModPhys.64.1045",
3162 publisher = "American Physical Society",
3166 title = "Electron densities in search of Hamiltonians",
3167 author = "Mel Levy",
3168 journal = "Phys. Rev. A",
3171 pages = "1200--1208",
3175 doi = "10.1103/PhysRevA.26.1200",
3176 publisher = "American Physical Society",
3180 title = "Strain-stabilized highly concentrated pseudomorphic
3181 $Si1-x$$Cx$ layers in Si",
3182 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3184 journal = "Phys. Rev. Lett.",
3187 pages = "3578--3581",
3191 doi = "10.1103/PhysRevLett.72.3578",
3192 publisher = "American Physical Society",
3193 notes = "high c concentration in si, heterostructure, strained
3198 title = "Phosphorous Doping of Strain-Induced
3199 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3200 by Low-Temperature Chemical Vapor Deposition",
3201 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3202 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3203 journal = "Japanese J. Appl. Phys.",
3205 number = "Part 1, No. 4B",
3206 pages = "2472--2475",
3209 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3210 doi = "10.1143/JJAP.41.2472",
3211 publisher = "The Japan Society of Applied Physics",
3212 notes = "experimental charge carrier mobility in strained si",
3216 title = "Electron Transport Model for Strained Silicon-Carbon
3218 author = "Shu-Tong Chang and Chung-Yi Lin",
3219 journal = "Japanese J. Appl. Phys.",
3222 pages = "2257--2262",
3225 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3226 doi = "10.1143/JJAP.44.2257",
3227 publisher = "The Japan Society of Applied Physics",
3228 notes = "enhance of electron mobility in strained si",
3231 @Article{kissinger94,
3232 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3235 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3236 y] layers on Si(001)",
3239 journal = "Appl. Phys. Lett.",
3242 pages = "3356--3358",
3243 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3244 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3245 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3246 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3247 URL = "http://link.aip.org/link/?APL/65/3356/1",
3248 doi = "10.1063/1.112390",
3249 notes = "strained si influence on optical properties",
3253 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3256 title = "Substitutional versus interstitial carbon
3257 incorporation during pseudomorphic growth of Si[sub 1 -
3258 y]{C}[sub y] on Si(001)",
3261 journal = "J. Appl. Phys.",
3264 pages = "6711--6715",
3265 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3266 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3268 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3269 doi = "10.1063/1.363797",
3270 notes = "mbe substitutional vs interstitial c incorporation",
3274 author = "H. J. Osten and P. Gaworzewski",
3276 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3277 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3281 journal = "J. Appl. Phys.",
3284 pages = "4977--4981",
3285 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3286 semiconductors; semiconductor epitaxial layers; carrier
3287 density; Hall mobility; interstitials; defect states",
3288 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3289 doi = "10.1063/1.366364",
3290 notes = "charge transport in strained si",
3294 title = "Carbon-mediated aggregation of self-interstitials in
3295 silicon: {A} large-scale molecular dynamics study",
3296 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3297 journal = "Phys. Rev. B",
3304 doi = "10.1103/PhysRevB.69.155214",
3305 publisher = "American Physical Society",
3306 notes = "simulation using promising tersoff reparametrization",
3310 title = "Event-Based Relaxation of Continuous Disordered
3312 author = "G. T. Barkema and Normand Mousseau",
3313 journal = "Phys. Rev. Lett.",
3316 pages = "4358--4361",
3320 doi = "10.1103/PhysRevLett.77.4358",
3321 publisher = "American Physical Society",
3322 notes = "activation relaxation technique, art, speed up slow
3327 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3328 Minoukadeh and F. Willaime",
3330 title = "Some improvements of the activation-relaxation
3331 technique method for finding transition pathways on
3332 potential energy surfaces",
3335 journal = "J. Chem. Phys.",
3341 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3342 surfaces; vacancies (crystal)",
3343 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3344 doi = "10.1063/1.3088532",
3345 notes = "improvements to art, refs for methods to find
3346 transition pathways",
3349 @Article{parrinello81,
3350 author = "M. Parrinello and A. Rahman",
3352 title = "Polymorphic transitions in single crystals: {A} new
3353 molecular dynamics method",
3356 journal = "J. Appl. Phys.",
3359 pages = "7182--7190",
3360 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3361 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3362 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3363 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3364 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3366 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3367 doi = "10.1063/1.328693",
3370 @Article{stillinger85,
3371 title = "Computer simulation of local order in condensed phases
3373 author = "Frank H. Stillinger and Thomas A. Weber",
3374 journal = "Phys. Rev. B",
3377 pages = "5262--5271",
3381 doi = "10.1103/PhysRevB.31.5262",
3382 publisher = "American Physical Society",
3386 title = "Empirical potential for hydrocarbons for use in
3387 simulating the chemical vapor deposition of diamond
3389 author = "Donald W. Brenner",
3390 journal = "Phys. Rev. B",
3393 pages = "9458--9471",
3397 doi = "10.1103/PhysRevB.42.9458",
3398 publisher = "American Physical Society",
3399 notes = "brenner hydro carbons",
3403 title = "Modeling of Covalent Bonding in Solids by Inversion of
3404 Cohesive Energy Curves",
3405 author = "Martin Z. Bazant and Efthimios Kaxiras",
3406 journal = "Phys. Rev. Lett.",
3409 pages = "4370--4373",
3413 doi = "10.1103/PhysRevLett.77.4370",
3414 publisher = "American Physical Society",
3415 notes = "first si edip",
3419 title = "Environment-dependent interatomic potential for bulk
3421 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3423 journal = "Phys. Rev. B",
3426 pages = "8542--8552",
3430 doi = "10.1103/PhysRevB.56.8542",
3431 publisher = "American Physical Society",
3432 notes = "second si edip",
3436 title = "Interatomic potential for silicon defects and
3438 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3439 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3440 journal = "Phys. Rev. B",
3443 pages = "2539--2550",
3447 doi = "10.1103/PhysRevB.58.2539",
3448 publisher = "American Physical Society",
3449 notes = "latest si edip, good dislocation explanation",
3453 journal = "{PARCAS} molecular dynamics code",
3454 author = "K. Nordlund",
3459 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3461 author = "Arthur F. Voter",
3462 journal = "Phys. Rev. Lett.",
3465 pages = "3908--3911",
3469 doi = "10.1103/PhysRevLett.78.3908",
3470 publisher = "American Physical Society",
3471 notes = "hyperdynamics, accelerated md",
3475 author = "Arthur F. Voter",
3477 title = "A method for accelerating the molecular dynamics
3478 simulation of infrequent events",
3481 journal = "J. Chem. Phys.",
3484 pages = "4665--4677",
3485 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3486 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3487 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3488 energy functions; surface diffusion; reaction kinetics
3489 theory; potential energy surfaces",
3490 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3491 doi = "10.1063/1.473503",
3492 notes = "improved hyperdynamics md",
3495 @Article{sorensen2000,
3496 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3498 title = "Temperature-accelerated dynamics for simulation of
3502 journal = "J. Chem. Phys.",
3505 pages = "9599--9606",
3506 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3507 MOLECULAR DYNAMICS METHOD; surface diffusion",
3508 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3509 doi = "10.1063/1.481576",
3510 notes = "temperature accelerated dynamics, tad",
3514 title = "Parallel replica method for dynamics of infrequent
3516 author = "Arthur F. Voter",
3517 journal = "Phys. Rev. B",
3520 pages = "R13985--R13988",
3524 doi = "10.1103/PhysRevB.57.R13985",
3525 publisher = "American Physical Society",
3526 notes = "parallel replica method, accelerated md",
3530 author = "Xiongwu Wu and Shaomeng Wang",
3532 title = "Enhancing systematic motion in molecular dynamics
3536 journal = "J. Chem. Phys.",
3539 pages = "9401--9410",
3540 keywords = "molecular dynamics method; argon; Lennard-Jones
3541 potential; crystallisation; liquid theory",
3542 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3543 doi = "10.1063/1.478948",
3544 notes = "self guided md, sgmd, accelerated md, enhancing
3548 @Article{choudhary05,
3549 author = "Devashish Choudhary and Paulette Clancy",
3551 title = "Application of accelerated molecular dynamics schemes
3552 to the production of amorphous silicon",
3555 journal = "J. Chem. Phys.",
3561 keywords = "molecular dynamics method; silicon; glass structure;
3562 amorphous semiconductors",
3563 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3564 doi = "10.1063/1.1878733",
3565 notes = "explanation of sgmd and hyper md, applied to amorphous
3570 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3572 title = "Carbon precipitation in silicon: Why is it so
3576 journal = "Appl. Phys. Lett.",
3579 pages = "3336--3338",
3580 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3581 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3583 URL = "http://link.aip.org/link/?APL/62/3336/1",
3584 doi = "10.1063/1.109063",
3585 notes = "interfacial energy of cubic sic and si, si self
3586 interstitials necessary for precipitation, volume
3587 decrease, high interface energy",
3590 @Article{chaussende08,
3591 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3592 journal = "J. Cryst. Growth",
3597 note = "Proceedings of the E-MRS Conference, Symposium G -
3598 Substrates of Wide Bandgap Materials",
3600 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3601 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3602 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3603 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3604 and A. Andreadou and E. K. Polychroniadis and C.
3605 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3606 notes = "3c-sic crystal growth, sic fabrication + links,
3610 @Article{chaussende07,
3611 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3612 title = "Status of Si{C} bulk growth processes",
3613 journal = "J. Phys. D",
3617 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3619 notes = "review of sic single crystal growth methods, process
3624 title = "Forces in Molecules",
3625 author = "R. P. Feynman",
3626 journal = "Phys. Rev.",
3633 doi = "10.1103/PhysRev.56.340",
3634 publisher = "American Physical Society",
3635 notes = "hellmann feynman forces",
3639 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3640 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3641 their Contrasting Properties",
3642 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3644 journal = "Phys. Rev. Lett.",
3651 doi = "10.1103/PhysRevLett.84.943",
3652 publisher = "American Physical Society",
3653 notes = "si sio2 and sic sio2 interface",
3656 @Article{djurabekova08,
3657 title = "Atomistic simulation of the interface structure of Si
3658 nanocrystals embedded in amorphous silica",
3659 author = "Flyura Djurabekova and Kai Nordlund",
3660 journal = "Phys. Rev. B",
3667 doi = "10.1103/PhysRevB.77.115325",
3668 publisher = "American Physical Society",
3669 notes = "nc-si in sio2, interface energy, nc construction,
3670 angular distribution, coordination",
3674 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3675 W. Liang and J. Zou",
3677 title = "Nature of interfacial defects and their roles in
3678 strain relaxation at highly lattice mismatched
3679 3{C}-Si{C}/Si (001) interface",
3682 journal = "J. Appl. Phys.",
3688 keywords = "anelastic relaxation; crystal structure; dislocations;
3689 elemental semiconductors; semiconductor growth;
3690 semiconductor thin films; silicon; silicon compounds;
3691 stacking faults; wide band gap semiconductors",
3692 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3693 doi = "10.1063/1.3234380",
3694 notes = "sic/si interface, follow refs, tem image
3695 deconvolution, dislocation defects",
3698 @Article{kitabatake93,
3699 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3702 title = "Simulations and experiments of Si{C} heteroepitaxial
3703 growth on Si(001) surface",
3706 journal = "J. Appl. Phys.",
3709 pages = "4438--4445",
3710 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3711 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3712 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3713 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3714 doi = "10.1063/1.354385",
3715 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3719 @Article{kitabatake97,
3720 author = "Makoto Kitabatake",
3721 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3722 Heteroepitaxial Growth",
3723 publisher = "WILEY-VCH Verlag",
3725 journal = "phys. status solidi (b)",
3728 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3729 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3730 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3734 title = "Strain relaxation and thermal stability of the
3735 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3737 journal = "Thin Solid Films",
3744 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3745 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3746 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3747 keywords = "Strain relaxation",
3748 keywords = "Interfaces",
3749 keywords = "Thermal stability",
3750 keywords = "Molecular dynamics",
3751 notes = "tersoff sic/si interface study",
3755 title = "Ab initio Study of Misfit Dislocations at the
3756 $Si{C}/Si(001)$ Interface",
3757 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3759 journal = "Phys. Rev. Lett.",
3766 doi = "10.1103/PhysRevLett.89.156101",
3767 publisher = "American Physical Society",
3768 notes = "sic/si interface study",
3771 @Article{pizzagalli03,
3772 title = "Theoretical investigations of a highly mismatched
3773 interface: Si{C}/Si(001)",
3774 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3776 journal = "Phys. Rev. B",
3783 doi = "10.1103/PhysRevB.68.195302",
3784 publisher = "American Physical Society",
3785 notes = "tersoff md and ab initio sic/si interface study",
3789 title = "Atomic configurations of dislocation core and twin
3790 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3791 electron microscopy",
3792 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3793 H. Zheng and J. W. Liang",
3794 journal = "Phys. Rev. B",
3801 doi = "10.1103/PhysRevB.75.184103",
3802 publisher = "American Physical Society",
3803 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3807 @Article{hornstra58,
3808 title = "Dislocations in the diamond lattice",
3809 journal = "J. Phys. Chem. Solids",
3816 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3817 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3818 author = "J. Hornstra",
3819 notes = "dislocations in diamond lattice",
3823 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3824 Ion `Hot' Implantation",
3825 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3826 Hirao and Naoki Arai and Tomio Izumi",
3827 journal = "Japanese J. Appl. Phys.",
3829 number = "Part 1, No. 2A",
3833 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3834 doi = "10.1143/JJAP.31.343",
3835 publisher = "The Japan Society of Applied Physics",
3836 notes = "c-c bonds in c implanted si, hot implantation
3837 efficiency, c-c hard to break by thermal annealing",
3840 @Article{eichhorn99,
3841 author = "F. Eichhorn and N. Schell and W. Matz and R.
3844 title = "Strain and Si{C} particle formation in silicon
3845 implanted with carbon ions of medium fluence studied by
3846 synchrotron x-ray diffraction",
3849 journal = "J. Appl. Phys.",
3852 pages = "4184--4187",
3853 keywords = "silicon; carbon; elemental semiconductors; chemical
3854 interdiffusion; ion implantation; X-ray diffraction;
3855 precipitation; semiconductor doping",
3856 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3857 doi = "10.1063/1.371344",
3858 notes = "sic conversion by ibs, detected substitutional carbon,
3859 expansion of si lattice",
3862 @Article{eichhorn02,
3863 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3864 Metzger and W. Matz and R. K{\"{o}}gler",
3866 title = "Structural relation between Si and Si{C} formed by
3867 carbon ion implantation",
3870 journal = "J. Appl. Phys.",
3873 pages = "1287--1292",
3874 keywords = "silicon compounds; wide band gap semiconductors; ion
3875 implantation; annealing; X-ray scattering; transmission
3876 electron microscopy",
3877 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3878 doi = "10.1063/1.1428105",
3879 notes = "3c-sic alignement to si host in ibs depending on
3880 temperature, might explain c into c sub trafo",
3884 author = "G Lucas and M Bertolus and L Pizzagalli",
3885 title = "An environment-dependent interatomic potential for
3886 silicon carbide: calculation of bulk properties,
3887 high-pressure phases, point and extended defects, and
3888 amorphous structures",
3889 journal = "J. Phys.: Condens. Matter",
3893 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3899 author = "J Godet and L Pizzagalli and S Brochard and P
3901 title = "Comparison between classical potentials and ab initio
3902 methods for silicon under large shear",
3903 journal = "J. Phys.: Condens. Matter",
3907 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3909 notes = "comparison of empirical potentials, stillinger weber,
3910 edip, tersoff, ab initio",
3913 @Article{moriguchi98,
3914 title = "Verification of Tersoff's Potential for Static
3915 Structural Analysis of Solids of Group-{IV} Elements",
3916 author = "Koji Moriguchi and Akira Shintani",
3917 journal = "Japanese J. Appl. Phys.",
3919 number = "Part 1, No. 2",
3923 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3924 doi = "10.1143/JJAP.37.414",
3925 publisher = "The Japan Society of Applied Physics",
3926 notes = "tersoff stringent test",
3929 @Article{mazzarolo01,
3930 title = "Low-energy recoils in crystalline silicon: Quantum
3932 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3933 Lulli and Eros Albertazzi",
3934 journal = "Phys. Rev. B",
3941 doi = "10.1103/PhysRevB.63.195207",
3942 publisher = "American Physical Society",
3945 @Article{holmstroem08,
3946 title = "Threshold defect production in silicon determined by
3947 density functional theory molecular dynamics
3949 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3950 journal = "Phys. Rev. B",
3957 doi = "10.1103/PhysRevB.78.045202",
3958 publisher = "American Physical Society",
3959 notes = "threshold displacement comparison empirical and ab
3963 @Article{nordlund97,
3964 title = "Repulsive interatomic potentials calculated using
3965 Hartree-Fock and density-functional theory methods",
3966 journal = "Nucl. Instrum. Methods Phys. Res. B",
3973 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3974 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3975 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3976 notes = "repulsive ab initio potential",
3980 title = "Efficiency of ab-initio total energy calculations for
3981 metals and semiconductors using a plane-wave basis
3983 journal = "Comput. Mater. Sci.",
3990 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3991 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3992 author = "G. Kresse and J. Furthm{\"{u}}ller",
3997 title = "Projector augmented-wave method",
3998 author = "P. E. Bl{\"o}chl",
3999 journal = "Phys. Rev. B",
4002 pages = "17953--17979",
4006 doi = "10.1103/PhysRevB.50.17953",
4007 publisher = "American Physical Society",
4008 notes = "paw method",
4011 @InCollection{cohen70,
4012 title = "The Fitting of Pseudopotentials to Experimental Data
4013 and Their Subsequent Application",
4014 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4015 publisher = "Academic Press",
4019 series = "Solid State Physics",
4021 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4022 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4023 author = "Marvin L. Cohen and Volker Heine",
4027 title = "Norm-Conserving Pseudopotentials",
4028 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4029 journal = "Phys. Rev. Lett.",
4032 pages = "1494--1497",
4036 doi = "10.1103/PhysRevLett.43.1494",
4037 publisher = "American Physical Society",
4038 notes = "norm-conserving pseudopotentials",
4041 @Article{troullier91,
4042 title = "Efficient pseudopotentials for plane-wave
4044 author = "N. Troullier and Jos\'e Luriaas Martins",
4045 journal = "Phys. Rev. B",
4048 pages = "1993--2006",
4052 doi = "10.1103/PhysRevB.43.1993",
4053 publisher = "American Physical Society",
4056 @Article{vanderbilt90,
4057 title = "Soft self-consistent pseudopotentials in a generalized
4058 eigenvalue formalism",
4059 author = "David Vanderbilt",
4060 journal = "Phys. Rev. B",
4063 pages = "7892--7895",
4067 doi = "10.1103/PhysRevB.41.7892",
4068 publisher = "American Physical Society",
4069 notes = "vasp pseudopotentials",
4072 @Article{ceperley80,
4073 title = "Ground State of the Electron Gas by a Stochastic
4075 author = "D. M. Ceperley and B. J. Alder",
4076 journal = "Phys. Rev. Lett.",
4083 doi = "10.1103/PhysRevLett.45.566",
4084 publisher = "American Physical Society",
4088 title = "Self-interaction correction to density-functional
4089 approximations for many-electron systems",
4090 author = "J. P. Perdew and Alex Zunger",
4091 journal = "Phys. Rev. B",
4094 pages = "5048--5079",
4098 doi = "10.1103/PhysRevB.23.5048",
4099 publisher = "American Physical Society",
4103 title = "Accurate and simple density functional for the
4104 electronic exchange energy: Generalized gradient
4106 author = "John P. Perdew and Yue Wang",
4107 journal = "Phys. Rev. B",
4110 pages = "8800--8802",
4114 doi = "10.1103/PhysRevB.33.8800",
4115 publisher = "American Physical Society",
4116 notes = "rapid communication gga",
4120 title = "Generalized gradient approximations for exchange and
4121 correlation: {A} look backward and forward",
4122 journal = "Physica B",
4129 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4130 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4131 author = "John P. Perdew",
4132 notes = "gga overview",
4136 title = "Atoms, molecules, solids, and surfaces: Applications
4137 of the generalized gradient approximation for exchange
4139 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4140 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4141 and Carlos Fiolhais",
4142 journal = "Phys. Rev. B",
4145 pages = "6671--6687",
4149 doi = "10.1103/PhysRevB.46.6671",
4150 publisher = "American Physical Society",
4151 notes = "gga pw91 (as in vasp)",
4155 title = "Special Points in the Brillouin Zone",
4156 author = "D. J. Chadi and Marvin L. Cohen",
4157 journal = "Phys. Rev. B",
4160 pages = "5747--5753",
4164 doi = "10.1103/PhysRevB.8.5747",
4165 publisher = "American Physical Society",
4168 @Article{baldereschi73,
4169 title = "Mean-Value Point in the Brillouin Zone",
4170 author = "A. Baldereschi",
4171 journal = "Phys. Rev. B",
4174 pages = "5212--5215",
4178 doi = "10.1103/PhysRevB.7.5212",
4179 publisher = "American Physical Society",
4180 notes = "mean value k point",
4183 @Article{monkhorst76,
4184 title = "Special points for Brillouin-zone integrations",
4185 author = "Hendrik J. Monkhorst and James D. Pack",
4186 journal = "Phys. Rev. B",
4189 pages = "5188--5192",
4193 doi = "10.1103/PhysRevB.13.5188",
4194 publisher = "American Physical Society",
4198 title = "Ab initio pseudopotential calculations of dopant
4200 journal = "Comput. Mater. Sci.",
4207 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4208 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4209 author = "Jing Zhu",
4210 keywords = "TED (transient enhanced diffusion)",
4211 keywords = "Boron dopant",
4212 keywords = "Carbon dopant",
4213 keywords = "Defect",
4214 keywords = "ab initio pseudopotential method",
4215 keywords = "Impurity cluster",
4216 notes = "binding of c to si interstitial, c in si defects",
4220 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4222 title = "Si{C} buried layer formation by ion beam synthesis at
4226 journal = "Appl. Phys. Lett.",
4229 pages = "2646--2648",
4230 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4231 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4232 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4233 ELECTRON MICROSCOPY",
4234 URL = "http://link.aip.org/link/?APL/66/2646/1",
4235 doi = "10.1063/1.113112",
4236 notes = "precipitation mechanism by substitutional carbon, si
4237 self interstitials react with further implanted c",
4241 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4242 Kolodzey and A. Hairie",
4244 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4248 journal = "J. Appl. Phys.",
4251 pages = "4631--4633",
4252 keywords = "silicon compounds; precipitation; localised modes;
4253 semiconductor epitaxial layers; infrared spectra;
4254 Fourier transform spectra; thermal stability;
4256 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4257 doi = "10.1063/1.368703",
4258 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4262 author = "R Jones and B J Coomer and P R Briddon",
4263 title = "Quantum mechanical modelling of defects in
4265 journal = "J. Phys.: Condens. Matter",
4269 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4271 notes = "ab inito dft intro, vibrational modes, c defect in
4276 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4277 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4278 J. E. Greene and S. G. Bishop",
4280 title = "Carbon incorporation pathways and lattice sites in
4281 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4282 molecular-beam epitaxy",
4285 journal = "J. Appl. Phys.",
4288 pages = "5716--5727",
4289 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4290 doi = "10.1063/1.1465122",
4291 notes = "c substitutional incorporation pathway, dft and expt",
4295 title = "Dynamic properties of interstitial carbon and
4296 carbon-carbon pair defects in silicon",
4297 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4299 journal = "Phys. Rev. B",
4302 pages = "2188--2194",
4306 doi = "10.1103/PhysRevB.55.2188",
4307 publisher = "American Physical Society",
4308 notes = "ab initio c in si and di-carbon defect, no formation
4309 energies, different migration barriers and paths",
4313 title = "Interstitial carbon and the carbon-carbon pair in
4314 silicon: Semiempirical electronic-structure
4316 author = "Matthew J. Burnard and Gary G. DeLeo",
4317 journal = "Phys. Rev. B",
4320 pages = "10217--10225",
4324 doi = "10.1103/PhysRevB.47.10217",
4325 publisher = "American Physical Society",
4326 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4327 carbon defect, formation energies",
4331 title = "Electronic structure of interstitial carbon in
4333 author = "Morgan Besson and Gary G. DeLeo",
4334 journal = "Phys. Rev. B",
4337 pages = "4028--4033",
4341 doi = "10.1103/PhysRevB.43.4028",
4342 publisher = "American Physical Society",
4346 title = "Review of atomistic simulations of surface diffusion
4347 and growth on semiconductors",
4348 journal = "Comput. Mater. Sci.",
4353 note = "Proceedings of the Workshop on Virtual Molecular Beam
4356 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4357 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4358 author = "Efthimios Kaxiras",
4359 notes = "might contain c 100 db formation energy, overview md,
4360 tight binding, first principles",
4363 @Article{kaukonen98,
4364 title = "Effect of {N} and {B} doping on the growth of {CVD}
4366 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4368 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4369 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4371 journal = "Phys. Rev. B",
4374 pages = "9965--9970",
4378 doi = "10.1103/PhysRevB.57.9965",
4379 publisher = "American Physical Society",
4380 notes = "constrained conjugate gradient relaxation technique
4385 title = "Correlation between the antisite pair and the ${DI}$
4387 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4388 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4390 journal = "Phys. Rev. B",
4397 doi = "10.1103/PhysRevB.67.155203",
4398 publisher = "American Physical Society",
4402 title = "Production and recovery of defects in Si{C} after
4403 irradiation and deformation",
4404 journal = "J. Nucl. Mater.",
4407 pages = "1803--1808",
4411 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4412 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4413 author = "J. Chen and P. Jung and H. Klein",
4417 title = "Accumulation, dynamic annealing and thermal recovery
4418 of ion-beam-induced disorder in silicon carbide",
4419 journal = "Nucl. Instrum. Methods Phys. Res. B",
4426 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4427 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4428 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4431 @Article{bockstedte03,
4432 title = "Ab initio study of the migration of intrinsic defects
4434 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4436 journal = "Phys. Rev. B",
4443 doi = "10.1103/PhysRevB.68.205201",
4444 publisher = "American Physical Society",
4445 notes = "defect migration in sic",
4449 title = "Theoretical study of vacancy diffusion and
4450 vacancy-assisted clustering of antisites in Si{C}",
4451 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4453 journal = "Phys. Rev. B",
4460 doi = "10.1103/PhysRevB.68.155208",
4461 publisher = "American Physical Society",
4465 journal = "Telegrafiya i Telefoniya bez Provodov",
4469 author = "O. V. Lossev",
4473 title = "Luminous carborundum detector and detection effect and
4474 oscillations with crystals",
4475 journal = "Philos. Mag. Series 7",
4478 pages = "1024--1044",
4480 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4481 author = "O. V. Lossev",
4485 journal = "Physik. Zeitschr.",
4489 author = "O. V. Lossev",
4493 journal = "Physik. Zeitschr.",
4497 author = "O. V. Lossev",
4501 journal = "Physik. Zeitschr.",
4505 author = "O. V. Lossev",
4509 title = "A note on carborundum",
4510 journal = "Electrical World",
4514 author = "H. J. Round",
4517 @Article{vashishath08,
4518 title = "Recent trends in silicon carbide device research",
4519 journal = "Mj. Int. J. Sci. Tech.",
4524 author = "Munish Vashishath and Ashoke K. Chatterjee",
4525 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4526 notes = "sic polytype electronic properties",
4530 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4532 title = "Growth and Properties of beta-Si{C} Single Crystals",
4535 journal = "J. Appl. Phys.",
4539 URL = "http://link.aip.org/link/?JAP/37/333/1",
4540 doi = "10.1063/1.1707837",
4541 notes = "sic melt growth",
4545 author = "A. E. van Arkel and J. H. de Boer",
4546 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4548 publisher = "WILEY-VCH Verlag GmbH",
4550 journal = "Z. Anorg. Chem.",
4553 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4554 doi = "10.1002/zaac.19251480133",
4555 notes = "van arkel apparatus",
4559 author = "K. Moers",
4561 journal = "Z. Anorg. Chem.",
4564 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4569 author = "J. T. Kendall",
4570 title = "Electronic Conduction in Silicon Carbide",
4573 journal = "J. Chem. Phys.",
4577 URL = "http://link.aip.org/link/?JCP/21/821/1",
4578 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4583 author = "J. A. Lely",
4585 journal = "Ber. Deut. Keram. Ges.",
4588 notes = "lely sublimation growth process",
4591 @Article{knippenberg63,
4592 author = "W. F. Knippenberg",
4594 journal = "Philips Res. Repts.",
4597 notes = "acheson process",
4600 @Article{hoffmann82,
4601 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4604 title = "Silicon carbide blue light emitting diodes with
4605 improved external quantum efficiency",
4608 journal = "J. Appl. Phys.",
4611 pages = "6962--6967",
4612 keywords = "light emitting diodes; silicon carbides; quantum
4613 efficiency; visible radiation; experimental data;
4614 epitaxy; fabrication; medium temperature; layers;
4615 aluminium; nitrogen; substrates; pn junctions;
4616 electroluminescence; spectra; current density;
4618 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4619 doi = "10.1063/1.330041",
4620 notes = "blue led, sublimation process",
4624 author = "Philip Neudeck",
4625 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4626 Road 44135 Cleveland OH",
4627 title = "Progress in silicon carbide semiconductor electronics
4629 journal = "Journal of Electronic Materials",
4630 publisher = "Springer Boston",
4632 keyword = "Chemistry and Materials Science",
4636 URL = "http://dx.doi.org/10.1007/BF02659688",
4637 note = "10.1007/BF02659688",
4639 notes = "sic data, advantages of 3c sic",
4642 @Article{bhatnagar93,
4643 author = "M. Bhatnagar and B. J. Baliga",
4644 journal = "Electron Devices, IEEE Transactions on",
4645 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4652 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4653 rectifiers;Si;SiC;breakdown voltages;drift region
4654 properties;output characteristics;power MOSFETs;power
4655 semiconductor devices;switching characteristics;thermal
4656 analysis;Schottky-barrier diodes;electric breakdown of
4657 solids;insulated gate field effect transistors;power
4658 transistors;semiconductor materials;silicon;silicon
4659 compounds;solid-state rectifiers;thermal analysis;",
4660 doi = "10.1109/16.199372",
4662 notes = "comparison 3c 6h sic and si devices",
4666 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4667 A. Powell and C. S. Salupo and L. G. Matus",
4668 journal = "Electron Devices, IEEE Transactions on",
4669 title = "Electrical properties of epitaxial 3{C}- and
4670 6{H}-Si{C} p-n junction diodes produced side-by-side on
4671 6{H}-Si{C} substrates",
4677 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4678 C;6H-SiC layers;6H-SiC substrates;CVD
4679 process;SiC;chemical vapor deposition;doping;electrical
4680 properties;epitaxial layers;light
4681 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4682 diodes;polytype;rectification characteristics;reverse
4683 leakage current;reverse voltages;temperature;leakage
4684 currents;power electronics;semiconductor
4685 diodes;semiconductor epitaxial layers;semiconductor
4686 growth;semiconductor materials;silicon
4687 compounds;solid-state rectifiers;substrates;vapour
4688 phase epitaxial growth;",
4689 doi = "10.1109/16.285038",
4691 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4696 author = "N. Schulze and D. L. Barrett and G. Pensl",
4698 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4699 single crystals by physical vapor transport",
4702 journal = "Appl. Phys. Lett.",
4705 pages = "1632--1634",
4706 keywords = "silicon compounds; semiconductor materials;
4707 semiconductor growth; crystal growth from vapour;
4708 photoluminescence; Hall mobility",
4709 URL = "http://link.aip.org/link/?APL/72/1632/1",
4710 doi = "10.1063/1.121136",
4711 notes = "micropipe free 6h-sic pvt growth",
4715 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4717 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4720 journal = "Appl. Phys. Lett.",
4724 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4725 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4726 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4727 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4729 URL = "http://link.aip.org/link/?APL/50/221/1",
4730 doi = "10.1063/1.97667",
4731 notes = "apb 3c-sic heteroepitaxy on si",
4734 @Article{shibahara86,
4735 title = "Surface morphology of cubic Si{C}(100) grown on
4736 Si(100) by chemical vapor deposition",
4737 journal = "J. Cryst. Growth",
4744 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4745 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4746 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4748 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4751 @Article{desjardins96,
4752 author = "P. Desjardins and J. E. Greene",
4754 title = "Step-flow epitaxial growth on two-domain surfaces",
4757 journal = "J. Appl. Phys.",
4760 pages = "1423--1434",
4761 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4762 FILM GROWTH; SURFACE STRUCTURE",
4763 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4764 doi = "10.1063/1.360980",
4765 notes = "apb model",
4769 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4771 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4772 carbonization of silicon",
4775 journal = "J. Appl. Phys.",
4778 pages = "2070--2073",
4779 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4780 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4782 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4783 doi = "10.1063/1.360184",
4784 notes = "ssmbe of sic on si, lower temperatures",
4788 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4789 {MBE} using surface superstructure",
4790 journal = "J. Cryst. Growth",
4797 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4798 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4799 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4800 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4801 notes = "gas source mbe of 3c-sic on 6h-sic",
4804 @Article{yoshinobu92,
4805 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4806 and Takashi Fuyuki and Hiroyuki Matsunami",
4808 title = "Lattice-matched epitaxial growth of single crystalline
4809 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4810 molecular beam epitaxy",
4813 journal = "Appl. Phys. Lett.",
4817 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4818 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4819 INTERFACE STRUCTURE",
4820 URL = "http://link.aip.org/link/?APL/60/824/1",
4821 doi = "10.1063/1.107430",
4822 notes = "gas source mbe of 3c-sic on 6h-sic",
4825 @Article{yoshinobu90,
4826 title = "Atomic level control in gas source {MBE} growth of
4828 journal = "J. Cryst. Growth",
4835 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4836 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4837 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4838 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4839 notes = "gas source mbe of 3c-sic on 3c-sic",
4843 title = "Atomic layer epitaxy controlled by surface
4844 superstructures in Si{C}",
4845 journal = "Thin Solid Films",
4852 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4853 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4854 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4856 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4861 title = "Microscopic mechanisms of accurate layer-by-layer
4862 growth of [beta]-Si{C}",
4863 journal = "Thin Solid Films",
4870 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4871 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4872 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4873 and S. Misawa and E. Sakuma and S. Yoshida",
4874 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4879 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4881 title = "Effects of gas flow ratio on silicon carbide thin film
4882 growth mode and polytype formation during gas-source
4883 molecular beam epitaxy",
4886 journal = "Appl. Phys. Lett.",
4889 pages = "2851--2853",
4890 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4891 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4892 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4894 URL = "http://link.aip.org/link/?APL/65/2851/1",
4895 doi = "10.1063/1.112513",
4896 notes = "gas source mbe of 6h-sic on 6h-sic",
4900 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4901 title = "Heterointerface Control and Epitaxial Growth of
4902 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4903 publisher = "WILEY-VCH Verlag",
4905 journal = "phys. status solidi (b)",
4908 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4913 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4914 journal = "J. Cryst. Growth",
4921 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4922 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4923 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4924 keywords = "Reflection high-energy electron diffraction (RHEED)",
4925 keywords = "Scanning electron microscopy (SEM)",
4926 keywords = "Silicon carbide",
4927 keywords = "Silicon",
4928 keywords = "Island growth",
4929 notes = "lower temperature, 550-700",
4932 @Article{hatayama95,
4933 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4934 on Si using hydrocarbon radicals by gas source
4935 molecular beam epitaxy",
4936 journal = "J. Cryst. Growth",
4943 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4944 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4945 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4946 and Hiroyuki Matsunami",
4950 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4951 title = "The Preference of Silicon Carbide for Growth in the
4952 Metastable Cubic Form",
4953 journal = "J. Am. Ceram. Soc.",
4956 publisher = "Blackwell Publishing Ltd",
4958 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4959 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4960 pages = "2630--2633",
4961 keywords = "silicon carbide, crystal growth, crystal structure,
4962 calculations, stability",
4964 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4965 polytype dft calculation refs",
4968 @Article{allendorf91,
4969 title = "The adsorption of {H}-atoms on polycrystalline
4970 [beta]-silicon carbide",
4971 journal = "Surf. Sci.",
4978 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4979 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4980 author = "Mark D. Allendorf and Duane A. Outka",
4981 notes = "h adsorption on 3c-sic",
4984 @Article{eaglesham93,
4985 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4986 D. P. Adams and S. M. Yalisove",
4988 title = "Effect of {H} on Si molecular-beam epitaxy",
4991 journal = "J. Appl. Phys.",
4994 pages = "6615--6618",
4995 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4996 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4997 DIFFUSION; ADSORPTION",
4998 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4999 doi = "10.1063/1.355101",
5000 notes = "h incorporation on si surface, lower surface
5005 author = "Ronald C. Newman",
5006 title = "Carbon in Crystalline Silicon",
5007 journal = "MRS Proc.",
5012 doi = "10.1557/PROC-59-403",
5013 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5014 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5018 title = "The diffusivity of carbon in silicon",
5019 journal = "J. Phys. Chem. Solids",
5026 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5027 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5028 author = "R. C. Newman and J. Wakefield",
5029 notes = "diffusivity of substitutional c in si",
5033 author = "U. Gösele",
5034 title = "The Role of Carbon and Point Defects in Silicon",
5035 journal = "MRS Proc.",
5040 doi = "10.1557/PROC-59-419",
5041 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5042 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5045 @Article{mukashev82,
5046 title = "Defects in Carbon-Implanted Silicon",
5047 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5048 Fukuoka and Haruo Saito",
5049 journal = "Japanese J. Appl. Phys.",
5051 number = "Part 1, No. 2",
5055 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5056 doi = "10.1143/JJAP.21.399",
5057 publisher = "The Japan Society of Applied Physics",
5061 title = "Convergence of supercell calculations for point
5062 defects in semiconductors: Vacancy in silicon",
5063 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5065 journal = "Phys. Rev. B",
5068 pages = "1318--1325",
5072 doi = "10.1103/PhysRevB.58.1318",
5073 publisher = "American Physical Society",
5074 notes = "convergence k point supercell size, vacancy in
5079 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5080 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5081 K{\"{o}}gler and W. Skorupa",
5083 title = "Spectroscopic characterization of phases formed by
5084 high-dose carbon ion implantation in silicon",
5087 journal = "J. Appl. Phys.",
5090 pages = "2978--2984",
5091 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5092 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5093 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5094 DEPENDENCE; PRECIPITATES; ANNEALING",
5095 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5096 doi = "10.1063/1.358714",
5099 @Article{romano-rodriguez96,
5100 title = "Detailed analysis of [beta]-Si{C} formation by high
5101 dose carbon ion implantation in silicon",
5102 journal = "Materials Science and Engineering B",
5107 note = "European Materials Research Society 1995 Spring
5108 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5109 Oxygen in Silicon and in Other Elemental
5112 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5113 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5114 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5115 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5117 keywords = "Silicon",
5118 keywords = "Ion implantation",
5119 notes = "incoherent 3c-sic precipitate",
5122 @Article{davidson75,
5123 title = "The iterative calculation of a few of the lowest
5124 eigenvalues and corresponding eigenvectors of large
5125 real-symmetric matrices",
5126 journal = "J. Comput. Phys.",
5133 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5134 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5135 author = "Ernest R. Davidson",
5139 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5141 author = "T. W. Adorno",
5142 ISBN = "978-3-518-01236-9",
5143 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5145 publisher = "Suhrkamp",