2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 notes = "dual implantation, sic prec enhanced by vacancies,
122 precipitation by interstitial and substitutional
123 carbon, both mechanisms explained + refs",
127 title = "Carbon-mediated effects in silicon and in
128 silicon-related materials",
129 journal = "Materials Chemistry and Physics",
136 doi = "DOI: 10.1016/0254-0584(95)01673-I",
137 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
138 author = "W. Skorupa and R. A. Yankov",
139 notes = "review of silicon carbon compound",
143 author = "P. S. de Laplace",
144 title = "Th\'eorie analytique des probabilit\'es",
145 series = "Oeuvres Compl\`etes de Laplace",
147 publisher = "Gauthier-Villars",
151 @Article{mattoni2007,
152 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
153 title = "{Atomistic modeling of brittleness in covalent
155 journal = "Phys. Rev. B",
161 doi = "10.1103/PhysRevB.76.224103",
162 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
163 longe(r)-range-interactions, brittle propagation of
164 fracture, more available potentials, universal energy
165 relation (uer), minimum range model (mrm)",
169 title = "Comparative study of silicon empirical interatomic
171 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
172 journal = "Phys. Rev. B",
175 pages = "2250--2279",
179 doi = "10.1103/PhysRevB.46.2250",
180 publisher = "American Physical Society",
181 notes = "comparison of classical potentials for si",
185 title = "Stress relaxation in $a-Si$ induced by ion
187 author = "H. M. Urbassek M. Koster",
188 journal = "Phys. Rev. B",
191 pages = "11219--11224",
195 doi = "10.1103/PhysRevB.62.11219",
196 publisher = "American Physical Society",
197 notes = "virial derivation for 3-body tersoff potential",
200 @Article{breadmore99,
201 title = "Direct simulation of ion-beam-induced stressing and
202 amorphization of silicon",
203 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
204 journal = "Phys. Rev. B",
207 pages = "12610--12616",
211 doi = "10.1103/PhysRevB.60.12610",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
217 title = "First-Principles Calculation of Stress",
218 author = "O. H. Nielsen and Richard M. Martin",
219 journal = "Phys. Rev. Lett.",
226 doi = "10.1103/PhysRevLett.50.697",
227 publisher = "American Physical Society",
228 notes = "generalization of virial theorem",
232 title = "Quantum-mechanical theory of stress and force",
233 author = "O. H. Nielsen and Richard M. Martin",
234 journal = "Phys. Rev. B",
237 pages = "3780--3791",
241 doi = "10.1103/PhysRevB.32.3780",
242 publisher = "American Physical Society",
243 notes = "dft virial stress and forces",
247 author = "Henri Moissan",
248 title = "Nouvelles recherches sur la météorité de Cañon
250 journal = "Comptes rendus de l'Académie des Sciences",
257 author = "Y. S. Park",
258 title = "Si{C} Materials and Devices",
259 publisher = "Academic Press",
260 address = "San Diego",
265 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
266 Calvin H. Carter Jr. and D. Asbury",
267 title = "Si{C} Seeded Boule Growth",
268 journal = "Materials Science Forum",
272 notes = "modified lely process, micropipes",
276 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
277 Thermodynamical Properties of Lennard-Jones Molecules",
278 author = "Loup Verlet",
279 journal = "Phys. Rev.",
285 doi = "10.1103/PhysRev.159.98",
286 publisher = "American Physical Society",
287 notes = "velocity verlet integration algorithm equation of
291 @Article{berendsen84,
292 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
293 Gunsteren and A. DiNola and J. R. Haak",
295 title = "Molecular dynamics with coupling to an external bath",
298 journal = "J. Chem. Phys.",
301 pages = "3684--3690",
302 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
303 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
304 URL = "http://link.aip.org/link/?JCP/81/3684/1",
305 doi = "10.1063/1.448118",
306 notes = "berendsen thermostat barostat",
310 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
312 title = "Molecular dynamics determination of defect energetics
313 in beta -Si{C} using three representative empirical
315 journal = "Modell. Simul. Mater. Sci. Eng.",
319 URL = "http://stacks.iop.org/0965-0393/3/615",
320 notes = "comparison of tersoff, pearson and eam for defect
321 energetics in sic; (m)eam parameters for sic",
326 title = "Relationship between the embedded-atom method and
328 author = "Donald W. Brenner",
329 journal = "Phys. Rev. Lett.",
336 doi = "10.1103/PhysRevLett.63.1022",
337 publisher = "American Physical Society",
338 notes = "relation of tersoff and eam potential",
342 title = "Molecular-dynamics study of self-interstitials in
344 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
345 journal = "Phys. Rev. B",
348 pages = "9552--9558",
352 doi = "10.1103/PhysRevB.35.9552",
353 publisher = "American Physical Society",
354 notes = "selft-interstitials in silicon, stillinger-weber,
355 calculation of defect formation energy, defect
360 title = "Extended interstitials in silicon and germanium",
361 author = "H. R. Schober",
362 journal = "Phys. Rev. B",
365 pages = "13013--13015",
369 doi = "10.1103/PhysRevB.39.13013",
370 publisher = "American Physical Society",
371 notes = "stillinger-weber silicon 110 stable and metastable
372 dumbbell configuration",
376 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
377 Defect accumulation, topological features, and
379 author = "F. Gao and W. J. Weber",
380 journal = "Phys. Rev. B",
387 doi = "10.1103/PhysRevB.66.024106",
388 publisher = "American Physical Society",
389 notes = "sic intro, si cascade in 3c-sic, amorphization,
390 tersoff modified, pair correlation of amorphous sic, md
394 @Article{devanathan98,
395 title = "Computer simulation of a 10 ke{V} Si displacement
397 journal = "Nucl. Instrum. Methods Phys. Res. B",
403 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
404 author = "R. Devanathan and W. J. Weber and T. Diaz de la
406 notes = "modified tersoff short range potential, ab initio
410 @Article{devanathan98_2,
411 title = "Displacement threshold energies in [beta]-Si{C}",
412 journal = "J. Nucl. Mater.",
418 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
419 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
421 notes = "modified tersoff, ab initio, combined ab initio
425 @Article{kitabatake00,
426 title = "Si{C}/Si heteroepitaxial growth",
427 author = "M. Kitabatake",
428 journal = "Thin Solid Films",
433 notes = "md simulation, sic si heteroepitaxy, mbe",
437 title = "Intrinsic point defects in crystalline silicon:
438 Tight-binding molecular dynamics studies of
439 self-diffusion, interstitial-vacancy recombination, and
441 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
443 journal = "Phys. Rev. B",
446 pages = "14279--14289",
450 doi = "10.1103/PhysRevB.55.14279",
451 publisher = "American Physical Society",
452 notes = "si self interstitial, diffusion, tbmd",
456 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
459 title = "A kinetic Monte--Carlo study of the effective
460 diffusivity of the silicon self-interstitial in the
461 presence of carbon and boron",
464 journal = "J. Appl. Phys.",
467 pages = "1963--1967",
468 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
469 CARBON ADDITIONS; BORON ADDITIONS; elemental
470 semiconductors; self-diffusion",
471 URL = "http://link.aip.org/link/?JAP/84/1963/1",
472 doi = "10.1063/1.368328",
473 notes = "kinetic monte carlo of si self interstitial
478 title = "Barrier to Migration of the Silicon
480 author = "Y. Bar-Yam and J. D. Joannopoulos",
481 journal = "Phys. Rev. Lett.",
484 pages = "1129--1132",
488 doi = "10.1103/PhysRevLett.52.1129",
489 publisher = "American Physical Society",
490 notes = "si self-interstitial migration barrier",
493 @Article{bar-yam84_2,
494 title = "Electronic structure and total-energy migration
495 barriers of silicon self-interstitials",
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. B",
500 pages = "1844--1852",
504 doi = "10.1103/PhysRevB.30.1844",
505 publisher = "American Physical Society",
509 title = "First-principles calculations of self-diffusion
510 constants in silicon",
511 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
512 and D. B. Laks and W. Andreoni and S. T. Pantelides",
513 journal = "Phys. Rev. Lett.",
516 pages = "2435--2438",
520 doi = "10.1103/PhysRevLett.70.2435",
521 publisher = "American Physical Society",
522 notes = "si self int diffusion by ab initio md, formation
523 entropy calculations",
527 title = "Tight-binding theory of native point defects in
529 author = "L. Colombo",
530 journal = "Annu. Rev. Mater. Res.",
535 doi = "10.1146/annurev.matsci.32.111601.103036",
536 publisher = "Annual Reviews",
537 notes = "si self interstitial, tbmd, virial stress",
540 @Article{al-mushadani03,
541 title = "Free-energy calculations of intrinsic point defects in
543 author = "O. K. Al-Mushadani and R. J. Needs",
544 journal = "Phys. Rev. B",
551 doi = "10.1103/PhysRevB.68.235205",
552 publisher = "American Physical Society",
553 notes = "formation energies of intrinisc point defects in
554 silicon, si self interstitials, free energy",
557 @Article{goedecker02,
558 title = "A Fourfold Coordinated Point Defect in Silicon",
559 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
560 journal = "Phys. Rev. Lett.",
567 doi = "10.1103/PhysRevLett.88.235501",
568 publisher = "American Physical Society",
569 notes = "first time ffcd, fourfold coordinated point defect in
574 title = "Ab initio molecular dynamics simulation of
575 self-interstitial diffusion in silicon",
576 author = "Beat Sahli and Wolfgang Fichtner",
577 journal = "Phys. Rev. B",
584 doi = "10.1103/PhysRevB.72.245210",
585 publisher = "American Physical Society",
586 notes = "si self int, diffusion, barrier height, voronoi
591 title = "Ab initio calculations of the interaction between
592 native point defects in silicon",
593 journal = "Mater. Sci. Eng., B",
598 note = "EMRS 2005, Symposium D - Materials Science and Device
599 Issues for Future Technologies",
601 doi = "DOI: 10.1016/j.mseb.2005.08.072",
602 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
603 author = "G. Hobler and G. Kresse",
604 notes = "vasp intrinsic si defect interaction study, capture
609 title = "Ab initio study of self-diffusion in silicon over a
610 wide temperature range: Point defect states and
611 migration mechanisms",
612 author = "Shangyi Ma and Shaoqing Wang",
613 journal = "Phys. Rev. B",
620 doi = "10.1103/PhysRevB.81.193203",
621 publisher = "American Physical Society",
622 notes = "si self interstitial diffusion + refs",
626 title = "Atomistic simulations on the thermal stability of the
627 antisite pair in 3{C}- and 4{H}-Si{C}",
628 author = "M. Posselt and F. Gao and W. J. Weber",
629 journal = "Phys. Rev. B",
636 doi = "10.1103/PhysRevB.73.125206",
637 publisher = "American Physical Society",
641 title = "Correlation between self-diffusion in Si and the
642 migration mechanisms of vacancies and
643 self-interstitials: An atomistic study",
644 author = "M. Posselt and F. Gao and H. Bracht",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.78.035208",
653 publisher = "American Physical Society",
654 notes = "si self-interstitial and vacancy diffusion, stillinger
659 title = "Ab initio and empirical-potential studies of defect
660 properties in $3{C}-Si{C}$",
661 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
663 journal = "Phys. Rev. B",
670 doi = "10.1103/PhysRevB.64.245208",
671 publisher = "American Physical Society",
672 notes = "defects in 3c-sic",
676 title = "Empirical potential approach for defect properties in
678 journal = "Nucl. Instrum. Methods Phys. Res. B",
685 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
686 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
687 author = "Fei Gao and William J. Weber",
688 keywords = "Empirical potential",
689 keywords = "Defect properties",
690 keywords = "Silicon carbide",
691 keywords = "Computer simulation",
692 notes = "sic potential, brenner type, like erhart/albe",
696 title = "Atomistic study of intrinsic defect migration in
698 author = "Fei Gao and William J. Weber and M. Posselt and V.
700 journal = "Phys. Rev. B",
707 doi = "10.1103/PhysRevB.69.245205",
708 publisher = "American Physical Society",
709 notes = "defect migration in sic",
713 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
716 title = "Ab Initio atomic simulations of antisite pair recovery
717 in cubic silicon carbide",
720 journal = "Appl. Phys. Lett.",
726 keywords = "ab initio calculations; silicon compounds; antisite
727 defects; wide band gap semiconductors; molecular
728 dynamics method; density functional theory;
729 electron-hole recombination; photoluminescence;
730 impurities; diffusion",
731 URL = "http://link.aip.org/link/?APL/90/221915/1",
732 doi = "10.1063/1.2743751",
735 @Article{mattoni2002,
736 title = "Self-interstitial trapping by carbon complexes in
737 crystalline silicon",
738 author = "A. Mattoni and F. Bernardini and L. Colombo",
739 journal = "Phys. Rev. B",
746 doi = "10.1103/PhysRevB.66.195214",
747 publisher = "American Physical Society",
748 notes = "c in c-si, diffusion, interstitial configuration +
749 links, interaction of carbon and silicon interstitials,
750 tersoff suitability",
754 title = "Calculations of Silicon Self-Interstitial Defects",
755 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
757 journal = "Phys. Rev. Lett.",
760 pages = "2351--2354",
764 doi = "10.1103/PhysRevLett.83.2351",
765 publisher = "American Physical Society",
766 notes = "nice images of the defects, si defect overview +
771 title = "Identification of the migration path of interstitial
773 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
774 journal = "Phys. Rev. B",
777 pages = "7439--7442",
781 doi = "10.1103/PhysRevB.50.7439",
782 publisher = "American Physical Society",
783 notes = "carbon interstitial migration path shown, 001 c-si
788 title = "Theory of carbon-carbon pairs in silicon",
789 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
790 journal = "Phys. Rev. B",
793 pages = "9845--9850",
797 doi = "10.1103/PhysRevB.58.9845",
798 publisher = "American Physical Society",
799 notes = "c_i c_s pair configuration, theoretical results",
803 title = "Bistable interstitial-carbon--substitutional-carbon
805 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
807 journal = "Phys. Rev. B",
810 pages = "5765--5783",
814 doi = "10.1103/PhysRevB.42.5765",
815 publisher = "American Physical Society",
816 notes = "c_i c_s pair configuration, experimental results",
820 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
821 Shifeng Lu and Xiang-Yang Liu",
823 title = "Ab initio modeling and experimental study of {C}--{B}
827 journal = "Appl. Phys. Lett.",
831 keywords = "silicon; boron; carbon; elemental semiconductors;
832 impurity-defect interactions; ab initio calculations;
833 secondary ion mass spectra; diffusion; interstitials",
834 URL = "http://link.aip.org/link/?APL/80/52/1",
835 doi = "10.1063/1.1430505",
836 notes = "c-c 100 split, lower as a and b states of capaz",
840 title = "Ab initio investigation of carbon-related defects in
842 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
844 journal = "Phys. Rev. B",
847 pages = "12554--12557",
851 doi = "10.1103/PhysRevB.47.12554",
852 publisher = "American Physical Society",
853 notes = "c interstitials in crystalline silicon",
857 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
859 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
860 Sokrates T. Pantelides",
861 journal = "Phys. Rev. Lett.",
864 pages = "1814--1817",
868 doi = "10.1103/PhysRevLett.52.1814",
869 publisher = "American Physical Society",
870 notes = "microscopic theory diffusion silicon dft migration
875 title = "Unified Approach for Molecular Dynamics and
876 Density-Functional Theory",
877 author = "R. Car and M. Parrinello",
878 journal = "Phys. Rev. Lett.",
881 pages = "2471--2474",
885 doi = "10.1103/PhysRevLett.55.2471",
886 publisher = "American Physical Society",
887 notes = "car parrinello method, dft and md",
891 title = "Short-range order, bulk moduli, and physical trends in
892 c-$Si1-x$$Cx$ alloys",
893 author = "P. C. Kelires",
894 journal = "Phys. Rev. B",
897 pages = "8784--8787",
901 doi = "10.1103/PhysRevB.55.8784",
902 publisher = "American Physical Society",
903 notes = "c strained si, montecarlo md, bulk moduli, next
908 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
909 Application to the $Si1-x-yGexCy$ System",
910 author = "P. C. Kelires",
911 journal = "Phys. Rev. Lett.",
914 pages = "1114--1117",
918 doi = "10.1103/PhysRevLett.75.1114",
919 publisher = "American Physical Society",
920 notes = "mc md, strain compensation in si ge by c insertion",
924 title = "Low temperature electron irradiation of silicon
926 journal = "Solid State Communications",
933 doi = "DOI: 10.1016/0038-1098(70)90074-8",
934 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
935 author = "A. R. Bean and R. C. Newman",
939 title = "{EPR} Observation of the Isolated Interstitial Carbon
941 author = "G. D. Watkins and K. L. Brower",
942 journal = "Phys. Rev. Lett.",
945 pages = "1329--1332",
949 doi = "10.1103/PhysRevLett.36.1329",
950 publisher = "American Physical Society",
951 notes = "epr observations of 100 interstitial carbon atom in
956 title = "{EPR} identification of the single-acceptor state of
957 interstitial carbon in silicon",
958 author = "L. W. Song and G. D. Watkins",
959 journal = "Phys. Rev. B",
962 pages = "5759--5764",
966 doi = "10.1103/PhysRevB.42.5759",
967 publisher = "American Physical Society",
968 notes = "carbon diffusion in silicon",
972 author = "A K Tipping and R C Newman",
973 title = "The diffusion coefficient of interstitial carbon in
975 journal = "Semicond. Sci. Technol.",
979 URL = "http://stacks.iop.org/0268-1242/2/315",
981 notes = "diffusion coefficient of carbon interstitials in
986 title = "Carbon incorporation into Si at high concentrations by
987 ion implantation and solid phase epitaxy",
988 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
989 Picraux and J. K. Watanabe and J. W. Mayer",
990 journal = "J. Appl. Phys.",
995 doi = "10.1063/1.360806",
996 notes = "strained silicon, carbon supersaturation",
999 @Article{laveant2002,
1000 title = "Epitaxy of carbon-rich silicon with {MBE}",
1001 journal = "Mater. Sci. Eng., B",
1007 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1008 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1009 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1011 notes = "low c in si, tensile stress to compensate compressive
1012 stress, avoid sic precipitation",
1016 title = "The formation of swirl defects in silicon by
1017 agglomeration of self-interstitials",
1018 journal = "Journal of Crystal Growth",
1025 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1026 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1027 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1028 notes = "b-swirl: si + c interstitial agglomerates, c-si
1033 title = "Microdefects in silicon and their relation to point
1035 journal = "Journal of Crystal Growth",
1042 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1043 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1044 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1045 notes = "swirl review",
1049 author = "P. Werner and S. Eichler and G. Mariani and R.
1050 K{\"{o}}gler and W. Skorupa",
1051 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1052 silicon by transmission electron microscopy",
1055 journal = "Appl. Phys. Lett.",
1059 keywords = "silicon; ion implantation; carbon; crystal defects;
1060 transmission electron microscopy; annealing; positron
1061 annihilation; secondary ion mass spectroscopy; buried
1062 layers; precipitation",
1063 URL = "http://link.aip.org/link/?APL/70/252/1",
1064 doi = "10.1063/1.118381",
1065 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1069 @InProceedings{werner96,
1070 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1072 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1073 International Conference on",
1074 title = "{TEM} investigation of {C}-Si defects in carbon
1081 doi = "10.1109/IIT.1996.586497",
1083 notes = "c-si agglomerates dumbbells",
1087 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1090 title = "Carbon diffusion in silicon",
1093 journal = "Appl. Phys. Lett.",
1096 pages = "2465--2467",
1097 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1098 secondary ion mass spectra; semiconductor epitaxial
1099 layers; annealing; impurity-defect interactions;
1100 impurity distribution",
1101 URL = "http://link.aip.org/link/?APL/73/2465/1",
1102 doi = "10.1063/1.122483",
1103 notes = "c diffusion in si, kick out mechnism",
1107 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1109 title = "Self-interstitial enhanced carbon diffusion in
1113 journal = "Applied Physics Letters",
1117 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1118 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1119 TEMPERATURE; IMPURITIES",
1120 URL = "http://link.aip.org/link/?APL/45/268/1",
1121 doi = "10.1063/1.95167",
1122 notes = "c diffusion due to si self-interstitials",
1126 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1127 Picraux and J. K. Watanabe and J. W. Mayer",
1129 title = "Precipitation and relaxation in strained Si[sub 1 -
1130 y]{C}[sub y]/Si heterostructures",
1133 journal = "J. Appl. Phys.",
1136 pages = "3656--3668",
1137 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1138 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1139 doi = "10.1063/1.357429",
1140 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1141 precipitation by substitutional carbon, coherent prec,
1142 coherent to incoherent transition strain vs interface
1147 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1150 title = "Investigation of the high temperature behavior of
1151 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1154 journal = "J. Appl. Phys.",
1157 pages = "1934--1937",
1158 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1159 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1160 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1161 TEMPERATURE RANGE 04001000 K",
1162 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1163 doi = "10.1063/1.358826",
1167 title = "Prospects for device implementation of wide band gap
1169 author = "J. H. Edgar",
1170 journal = "J. Mater. Res.",
1175 doi = "10.1557/JMR.1992.0235",
1176 notes = "properties wide band gap semiconductor, sic
1180 @Article{zirkelbach2007,
1181 title = "Monte Carlo simulation study of a selforganisation
1182 process leading to ordered precipitate structures",
1183 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1185 journal = "Nucl. Instr. and Meth. B",
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1193 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1197 @Article{zirkelbach2006,
1198 title = "Monte-Carlo simulation study of the self-organization
1199 of nanometric amorphous precipitates in regular arrays
1200 during ion irradiation",
1201 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1203 journal = "Nucl. Instr. and Meth. B",
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1215 @Article{zirkelbach2005,
1216 title = "Modelling of a selforganization process leading to
1217 periodic arrays of nanometric amorphous precipitates by
1219 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1221 journal = "Comp. Mater. Sci.",
1228 doi = "doi:10.1016/j.commatsci.2004.12.016",
1229 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1233 @Article{zirkelbach09,
1234 title = "Molecular dynamics simulation of defect formation and
1235 precipitation in heavily carbon doped silicon",
1236 journal = "Mater. Sci. Eng., B",
1241 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1242 Silicon Materials Research for Electronic and
1243 Photovoltaic Applications",
1245 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1246 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1247 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1249 keywords = "Silicon",
1250 keywords = "Carbon",
1251 keywords = "Silicon carbide",
1252 keywords = "Nucleation",
1253 keywords = "Defect formation",
1254 keywords = "Molecular dynamics simulations",
1257 @Article{zirkelbach10,
1258 title = "Defects in carbon implanted silicon calculated by
1259 classical potentials and first-principles methods",
1260 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1261 K. N. Lindner and W. G. Schmidt and E. Rauls",
1262 journal = "Phys. Rev. B",
1269 doi = "10.1103/PhysRevB.82.094110",
1270 publisher = "American Physical Society",
1273 @Article{zirkelbach11a,
1274 title = "First principles study of defects in carbon implanted
1276 journal = "to be published",
1281 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1282 and W. G. Schmidt and E. Rauls",
1285 @Article{zirkelbach11b,
1287 journal = "to be published",
1292 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1293 K. N. Lindner and W. G. Schmidt and E. Rauls",
1297 author = "J. K. N. Lindner and A. Frohnwieser and B.
1298 Rauschenbach and B. Stritzker",
1299 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1301 journal = "MRS Online Proceedings Library",
1306 doi = "10.1557/PROC-354-171",
1307 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1308 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1309 notes = "first time ibs at moderate temperatures",
1313 title = "Formation of buried epitaxial silicon carbide layers
1314 in silicon by ion beam synthesis",
1315 journal = "Materials Chemistry and Physics",
1322 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1323 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1324 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1325 Götz and A. Frohnwieser and B. Rauschenbach and B.
1327 notes = "dose window",
1330 @Article{calcagno96,
1331 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1333 journal = "Nuclear Instruments and Methods in Physics Research
1334 Section B: Beam Interactions with Materials and Atoms",
1339 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1340 New Trends in Ion Beam Processing of Materials",
1342 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1343 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1344 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1345 Grimaldi and P. Musumeci",
1346 notes = "dose window, graphitic bonds",
1350 title = "Mechanisms of Si{C} Formation in the Ion Beam
1351 Synthesis of 3{C}-Si{C} Layers in Silicon",
1352 journal = "Materials Science Forum",
1357 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1358 URL = "http://www.scientific.net/MSF.264-268.215",
1359 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1360 notes = "intermediate temperature for sharp interface + good
1365 title = "Controlling the density distribution of Si{C}
1366 nanocrystals for the ion beam synthesis of buried Si{C}
1368 journal = "Nucl. Instrum. Methods Phys. Res. B",
1375 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1376 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1377 author = "J. K. N. Lindner and B. Stritzker",
1378 notes = "two-step implantation process",
1381 @Article{lindner99_2,
1382 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1384 journal = "Nucl. Instrum. Methods Phys. Res. B",
1390 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1391 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1392 author = "J. K. N. Lindner and B. Stritzker",
1393 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1397 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1398 Basic physical processes",
1399 journal = "Nucl. Instrum. Methods Phys. Res. B",
1406 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1407 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1408 author = "J{\"{o}}rg K. N. Lindner",
1412 title = "High-dose carbon implantations into silicon:
1413 fundamental studies for new technological tricks",
1414 author = "J. K. N. Lindner",
1415 journal = "Appl. Phys. A",
1419 doi = "10.1007/s00339-002-2062-8",
1420 notes = "ibs, burried sic layers",
1424 title = "On the balance between ion beam induced nanoparticle
1425 formation and displacive precipitate resolution in the
1427 journal = "Mater. Sci. Eng., C",
1432 note = "Current Trends in Nanoscience - from Materials to
1435 doi = "DOI: 10.1016/j.msec.2005.09.099",
1436 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1437 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1439 notes = "c int diffusion barrier",
1443 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1444 application in buffer layer for Ga{N} epitaxial
1446 journal = "Applied Surface Science",
1451 note = "APHYS'03 Special Issue",
1453 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1454 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1455 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1456 and S. Nishio and K. Yasuda and Y. Ishigami",
1457 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1460 @Article{yamamoto04,
1461 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1462 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1463 implantation into Si(1Â 1Â 1) substrate",
1464 journal = "Journal of Crystal Growth",
1469 note = "Proceedings of the 11th Biennial (US) Workshop on
1470 Organometallic Vapor Phase Epitaxy (OMVPE)",
1472 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1473 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1474 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1475 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1476 notes = "gan on 3c-sic",
1480 title = "Substrates for gallium nitride epitaxy",
1481 journal = "Materials Science and Engineering: R: Reports",
1488 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1489 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1490 author = "L. Liu and J. H. Edgar",
1491 notes = "gan substrates",
1494 @Article{takeuchi91,
1495 title = "Growth of single crystalline Ga{N} film on Si
1496 substrate using 3{C}-Si{C} as an intermediate layer",
1497 journal = "Journal of Crystal Growth",
1504 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1505 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1506 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1507 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1508 notes = "gan on 3c-sic (first time?)",
1512 author = "B. J. Alder and T. E. Wainwright",
1513 title = "Phase Transition for a Hard Sphere System",
1516 journal = "J. Chem. Phys.",
1519 pages = "1208--1209",
1520 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1521 doi = "10.1063/1.1743957",
1525 author = "B. J. Alder and T. E. Wainwright",
1526 title = "Studies in Molecular Dynamics. {I}. General Method",
1529 journal = "J. Chem. Phys.",
1533 URL = "http://link.aip.org/link/?JCP/31/459/1",
1534 doi = "10.1063/1.1730376",
1537 @Article{tersoff_si1,
1538 title = "New empirical model for the structural properties of
1540 author = "J. Tersoff",
1541 journal = "Phys. Rev. Lett.",
1548 doi = "10.1103/PhysRevLett.56.632",
1549 publisher = "American Physical Society",
1552 @Article{tersoff_si2,
1553 title = "New empirical approach for the structure and energy of
1555 author = "J. Tersoff",
1556 journal = "Phys. Rev. B",
1559 pages = "6991--7000",
1563 doi = "10.1103/PhysRevB.37.6991",
1564 publisher = "American Physical Society",
1567 @Article{tersoff_si3,
1568 title = "Empirical interatomic potential for silicon with
1569 improved elastic properties",
1570 author = "J. Tersoff",
1571 journal = "Phys. Rev. B",
1574 pages = "9902--9905",
1578 doi = "10.1103/PhysRevB.38.9902",
1579 publisher = "American Physical Society",
1583 title = "Empirical Interatomic Potential for Carbon, with
1584 Applications to Amorphous Carbon",
1585 author = "J. Tersoff",
1586 journal = "Phys. Rev. Lett.",
1589 pages = "2879--2882",
1593 doi = "10.1103/PhysRevLett.61.2879",
1594 publisher = "American Physical Society",
1598 title = "Modeling solid-state chemistry: Interatomic potentials
1599 for multicomponent systems",
1600 author = "J. Tersoff",
1601 journal = "Phys. Rev. B",
1604 pages = "5566--5568",
1608 doi = "10.1103/PhysRevB.39.5566",
1609 publisher = "American Physical Society",
1613 title = "Carbon defects and defect reactions in silicon",
1614 author = "J. Tersoff",
1615 journal = "Phys. Rev. Lett.",
1618 pages = "1757--1760",
1622 doi = "10.1103/PhysRevLett.64.1757",
1623 publisher = "American Physical Society",
1627 title = "Point defects and dopant diffusion in silicon",
1628 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1629 journal = "Rev. Mod. Phys.",
1636 doi = "10.1103/RevModPhys.61.289",
1637 publisher = "American Physical Society",
1641 title = "Silicon carbide: synthesis and processing",
1642 journal = "Nucl. Instrum. Methods Phys. Res. B",
1647 note = "Radiation Effects in Insulators",
1649 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1650 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1651 author = "W. Wesch",
1655 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1656 Palmour and J. A. Edmond",
1657 journal = "Proceedings of the IEEE",
1658 title = "Thin film deposition and microelectronic and
1659 optoelectronic device fabrication and characterization
1660 in monocrystalline alpha and beta silicon carbide",
1666 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1667 diode;SiC;dry etching;electrical
1668 contacts;etching;impurity incorporation;optoelectronic
1669 device fabrication;solid-state devices;surface
1670 chemistry;Schottky effect;Schottky gate field effect
1671 transistors;Schottky-barrier
1672 diodes;etching;heterojunction bipolar
1673 transistors;insulated gate field effect
1674 transistors;light emitting diodes;semiconductor
1675 materials;semiconductor thin films;silicon compounds;",
1676 doi = "10.1109/5.90132",
1678 notes = "sic growth methods",
1682 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1683 Lin and B. Sverdlov and M. Burns",
1685 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1686 ZnSe-based semiconductor device technologies",
1689 journal = "J. Appl. Phys.",
1692 pages = "1363--1398",
1693 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1694 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1695 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1697 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1698 doi = "10.1063/1.358463",
1699 notes = "sic intro, properties",
1703 author = "Noch Unbekannt",
1704 title = "How to find references",
1705 journal = "Journal of Applied References",
1712 title = "Atomistic simulation of thermomechanical properties of
1714 author = "Meijie Tang and Sidney Yip",
1715 journal = "Phys. Rev. B",
1718 pages = "15150--15159",
1721 doi = "10.1103/PhysRevB.52.15150",
1722 notes = "modified tersoff, scale cutoff with volume, promising
1723 tersoff reparametrization",
1724 publisher = "American Physical Society",
1728 title = "Silicon carbide as a new {MEMS} technology",
1729 journal = "Sensors and Actuators A: Physical",
1735 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1736 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1737 author = "Pasqualina M. Sarro",
1739 keywords = "Silicon carbide",
1740 keywords = "Micromachining",
1741 keywords = "Mechanical stress",
1745 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1746 semiconductor for high-temperature applications: {A}
1748 journal = "Solid-State Electronics",
1751 pages = "1409--1422",
1754 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1755 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1756 author = "J. B. Casady and R. W. Johnson",
1757 notes = "sic intro",
1760 @Article{giancarli98,
1761 title = "Design requirements for Si{C}/Si{C} composites
1762 structural material in fusion power reactor blankets",
1763 journal = "Fusion Engineering and Design",
1769 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1770 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1771 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1772 Marois and N. B. Morley and J. F. Salavy",
1776 title = "Electrical and optical characterization of Si{C}",
1777 journal = "Physica B: Condensed Matter",
1783 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1784 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1785 author = "G. Pensl and W. J. Choyke",
1789 title = "Investigation of growth processes of ingots of silicon
1790 carbide single crystals",
1791 journal = "J. Cryst. Growth",
1796 notes = "modified lely process",
1798 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1799 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1800 author = "Yu. M. Tairov and V. F. Tsvetkov",
1804 title = "General principles of growing large-size single
1805 crystals of various silicon carbide polytypes",
1806 journal = "Journal of Crystal Growth",
1813 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1814 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1815 author = "Yu.M. Tairov and V. F. Tsvetkov",
1819 title = "Si{C} boule growth by sublimation vapor transport",
1820 journal = "Journal of Crystal Growth",
1827 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1828 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1829 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1830 R. H. Hopkins and W. J. Choyke",
1834 title = "Growth of large Si{C} single crystals",
1835 journal = "Journal of Crystal Growth",
1842 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1843 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1844 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1845 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1850 title = "Control of polytype formation by surface energy
1851 effects during the growth of Si{C} monocrystals by the
1852 sublimation method",
1853 journal = "Journal of Crystal Growth",
1860 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1861 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1862 author = "R. A. Stein and P. Lanig",
1863 notes = "6h and 4h, sublimation technique",
1867 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1870 title = "Production of large-area single-crystal wafers of
1871 cubic Si{C} for semiconductor devices",
1874 journal = "Appl. Phys. Lett.",
1878 keywords = "silicon carbides; layers; chemical vapor deposition;
1880 URL = "http://link.aip.org/link/?APL/42/460/1",
1881 doi = "10.1063/1.93970",
1882 notes = "cvd of 3c-sic on si, sic buffer layer",
1886 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1887 and Hiroyuki Matsunami",
1889 title = "Epitaxial growth and electric characteristics of cubic
1893 journal = "J. Appl. Phys.",
1896 pages = "4889--4893",
1897 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1898 doi = "10.1063/1.338355",
1899 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1904 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1906 title = "Growth and Characterization of Cubic Si{C}
1907 Single-Crystal Films on Si",
1910 journal = "Journal of The Electrochemical Society",
1913 pages = "1558--1565",
1914 keywords = "semiconductor materials; silicon compounds; carbon
1915 compounds; crystal morphology; electron mobility",
1916 URL = "http://link.aip.org/link/?JES/134/1558/1",
1917 doi = "10.1149/1.2100708",
1918 notes = "blue light emitting diodes (led)",
1921 @Article{powell87_2,
1922 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
1923 C. M. Chorey and T. T. Cheng and P. Pirouz",
1925 title = "Improved beta-Si{C} heteroepitaxial films using
1926 off-axis Si substrates",
1929 journal = "Applied Physics Letters",
1933 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
1934 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
1935 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
1936 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
1937 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
1938 URL = "http://link.aip.org/link/?APL/51/823/1",
1939 doi = "10.1063/1.98824",
1940 notes = "improved sic on off-axis si substrates, reduced apbs",
1944 title = "Crystal growth of Si{C} by step-controlled epitaxy",
1945 journal = "Journal of Crystal Growth",
1952 doi = "DOI: 10.1016/0022-0248(90)90013-B",
1953 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1954 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
1956 notes = "step-controlled epitaxy model",
1960 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1961 and Hiroyuki Matsunami",
1962 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1966 journal = "J. Appl. Phys.",
1970 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1971 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1973 URL = "http://link.aip.org/link/?JAP/73/726/1",
1974 doi = "10.1063/1.353329",
1975 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1978 @Article{powell90_2,
1979 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1980 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1981 Yoganathan and J. Yang and P. Pirouz",
1983 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
1984 vicinal (0001) 6{H}-Si{C} wafers",
1987 journal = "Applied Physics Letters",
1990 pages = "1442--1444",
1991 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1992 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
1993 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
1994 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
1995 URL = "http://link.aip.org/link/?APL/56/1442/1",
1996 doi = "10.1063/1.102492",
1997 notes = "cvd of 6h-sic on 6h-sic",
2001 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2003 title = "Chemical vapor deposition and characterization of
2004 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2008 journal = "Journal of Applied Physics",
2011 pages = "2672--2679",
2012 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2013 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2014 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2015 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2016 PHASE EPITAXY; CRYSTAL ORIENTATION",
2017 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2018 doi = "10.1063/1.341608",
2022 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2023 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2024 Yoganathan and J. Yang and P. Pirouz",
2026 title = "Growth of improved quality 3{C}-Si{C} films on
2027 6{H}-Si{C} substrates",
2030 journal = "Appl. Phys. Lett.",
2033 pages = "1353--1355",
2034 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2035 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2036 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2038 URL = "http://link.aip.org/link/?APL/56/1353/1",
2039 doi = "10.1063/1.102512",
2040 notes = "cvd of 3c-sic on 6h-sic",
2044 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2045 Rozgonyi and K. L. More",
2047 title = "An examination of double positioning boundaries and
2048 interface misfit in beta-Si{C} films on alpha-Si{C}
2052 journal = "Journal of Applied Physics",
2055 pages = "2645--2650",
2056 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2057 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2058 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2059 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2060 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2061 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2062 doi = "10.1063/1.341004",
2066 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2067 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2068 and W. J. Choyke and L. Clemen and M. Yoganathan",
2070 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2071 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2074 journal = "Applied Physics Letters",
2078 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2079 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2080 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2081 URL = "http://link.aip.org/link/?APL/59/333/1",
2082 doi = "10.1063/1.105587",
2086 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2087 Thokala and M. J. Loboda",
2089 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2090 films on 6{H}-Si{C} by chemical vapor deposition from
2094 journal = "J. Appl. Phys.",
2097 pages = "1271--1273",
2098 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2099 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2101 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2102 doi = "10.1063/1.360368",
2103 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2107 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2108 properties of its p-n junction",
2109 journal = "Journal of Crystal Growth",
2116 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2117 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2118 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2120 notes = "first time ssmbe of 3c-sic on 6h-sic",
2124 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2125 [alpha]-Si{C}(0001) at low temperatures by solid-source
2126 molecular beam epitaxy",
2127 journal = "J. Cryst. Growth",
2133 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2134 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2135 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2136 Schr{\"{o}}ter and W. Richter",
2137 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2140 @Article{fissel95_apl,
2141 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2143 title = "Low-temperature growth of Si{C} thin films on Si and
2144 6{H}--Si{C} by solid-source molecular beam epitaxy",
2147 journal = "Appl. Phys. Lett.",
2150 pages = "3182--3184",
2151 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2153 URL = "http://link.aip.org/link/?APL/66/3182/1",
2154 doi = "10.1063/1.113716",
2155 notes = "mbe 3c-sic on si and 6h-sic",
2159 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2160 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2162 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2163 migration enhanced epitaxy controlled to an atomic
2164 level using surface superstructures",
2167 journal = "Applied Physics Letters",
2170 pages = "1204--1206",
2171 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2172 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2174 URL = "http://link.aip.org/link/?APL/68/1204/1",
2175 doi = "10.1063/1.115969",
2176 notes = "ss mbe sic, superstructure, reconstruction",
2180 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2181 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2182 C. M. Bertoni and A. Catellani",
2183 journal = "Phys. Rev. Lett.",
2190 doi = "10.1103/PhysRevLett.91.136101",
2191 publisher = "American Physical Society",
2192 notes = "dft calculations mbe sic growth",
2196 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2198 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2202 journal = "Appl. Phys. Lett.",
2206 URL = "http://link.aip.org/link/?APL/18/509/1",
2207 doi = "10.1063/1.1653516",
2208 notes = "first time sic by ibs, follow cites for precipitation
2213 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2214 and E. V. Lubopytova",
2215 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2216 by ion implantation",
2217 publisher = "Taylor \& Francis",
2219 journal = "Radiation Effects",
2223 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2224 notes = "3c-sic for different temperatures, amorphous, poly,
2225 single crystalline",
2228 @Article{akimchenko80,
2229 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2230 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2231 title = "Structure and optical properties of silicon implanted
2232 by high doses of 70 and 310 ke{V} carbon ions",
2233 publisher = "Taylor \& Francis",
2235 journal = "Radiation Effects",
2239 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2240 notes = "3c-sic nucleation by thermal spikes",
2244 title = "Structure and annealing properties of silicon carbide
2245 thin layers formed by implantation of carbon ions in
2247 journal = "Thin Solid Films",
2254 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2255 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2256 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2261 title = "Characteristics of the synthesis of [beta]-Si{C} by
2262 the implantation of carbon ions into silicon",
2263 journal = "Thin Solid Films",
2270 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2271 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2272 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2277 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2278 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2279 Chater and J. A. Iulner and J. Davis",
2280 title = "Formation mechanisms and structures of insulating
2281 compounds formed in silicon by ion beam synthesis",
2282 publisher = "Taylor \& Francis",
2284 journal = "Radiation Effects",
2288 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2289 notes = "ibs, comparison with sio and sin, higher temp or
2294 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2295 J. Davis and G. E. Celler",
2297 title = "Formation of buried layers of beta-Si{C} using ion
2298 beam synthesis and incoherent lamp annealing",
2301 journal = "Appl. Phys. Lett.",
2304 pages = "2242--2244",
2305 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2306 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2307 URL = "http://link.aip.org/link/?APL/51/2242/1",
2308 doi = "10.1063/1.98953",
2309 notes = "nice tem images, sic by ibs",
2313 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2314 and M. Olivier and A. M. Papon and G. Rolland",
2316 title = "High-temperature ion beam synthesis of cubic Si{C}",
2319 journal = "Journal of Applied Physics",
2322 pages = "2908--2912",
2323 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2324 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2325 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2326 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2327 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2328 REACTIONS; MONOCRYSTALS",
2329 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2330 doi = "10.1063/1.346092",
2331 notes = "triple energy implantation to overcome high annealing
2336 author = "R. I. Scace and G. A. Slack",
2338 title = "Solubility of Carbon in Silicon and Germanium",
2341 journal = "J. Chem. Phys.",
2344 pages = "1551--1555",
2345 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2346 doi = "10.1063/1.1730236",
2347 notes = "solubility of c in c-si, si-c phase diagram",
2351 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2352 F. W. Saris and W. Vandervorst",
2354 title = "Role of {C} and {B} clusters in transient diffusion of
2358 journal = "Appl. Phys. Lett.",
2361 pages = "1150--1152",
2362 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2363 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2365 URL = "http://link.aip.org/link/?APL/68/1150/1",
2366 doi = "10.1063/1.115706",
2367 notes = "suppression of transient enhanced diffusion (ted)",
2371 title = "Implantation and transient boron diffusion: the role
2372 of the silicon self-interstitial",
2373 journal = "Nucl. Instrum. Methods Phys. Res. B",
2378 note = "Selected Papers of the Tenth International Conference
2379 on Ion Implantation Technology (IIT '94)",
2381 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2382 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2383 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2388 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2389 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2390 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2393 title = "Physical mechanisms of transient enhanced dopant
2394 diffusion in ion-implanted silicon",
2397 journal = "J. Appl. Phys.",
2400 pages = "6031--6050",
2401 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2402 doi = "10.1063/1.364452",
2403 notes = "ted, transient enhanced diffusion, c silicon trap",
2407 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2409 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2410 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2413 journal = "Appl. Phys. Lett.",
2417 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2418 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2419 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2421 URL = "http://link.aip.org/link/?APL/64/324/1",
2422 doi = "10.1063/1.111195",
2423 notes = "beta sic nano crystals in si, mbe, annealing",
2427 author = "Richard A. Soref",
2429 title = "Optical band gap of the ternary semiconductor Si[sub 1
2430 - x - y]Ge[sub x]{C}[sub y]",
2433 journal = "J. Appl. Phys.",
2436 pages = "2470--2472",
2437 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2438 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2440 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2441 doi = "10.1063/1.349403",
2442 notes = "band gap of strained si by c",
2446 author = "E Kasper",
2447 title = "Superlattices of group {IV} elements, a new
2448 possibility to produce direct band gap material",
2449 journal = "Physica Scripta",
2452 URL = "http://stacks.iop.org/1402-4896/T35/232",
2454 notes = "superlattices, convert indirect band gap into a
2459 author = "H. J. Osten and J. Griesche and S. Scalese",
2461 title = "Substitutional carbon incorporation in epitaxial
2462 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2463 molecular beam epitaxy",
2466 journal = "Appl. Phys. Lett.",
2470 keywords = "molecular beam epitaxial growth; semiconductor growth;
2471 wide band gap semiconductors; interstitials; silicon
2473 URL = "http://link.aip.org/link/?APL/74/836/1",
2474 doi = "10.1063/1.123384",
2475 notes = "substitutional c in si",
2478 @Article{hohenberg64,
2479 title = "Inhomogeneous Electron Gas",
2480 author = "P. Hohenberg and W. Kohn",
2481 journal = "Phys. Rev.",
2484 pages = "B864--B871",
2488 doi = "10.1103/PhysRev.136.B864",
2489 publisher = "American Physical Society",
2490 notes = "density functional theory, dft",
2494 title = "Self-Consistent Equations Including Exchange and
2495 Correlation Effects",
2496 author = "W. Kohn and L. J. Sham",
2497 journal = "Phys. Rev.",
2500 pages = "A1133--A1138",
2504 doi = "10.1103/PhysRev.140.A1133",
2505 publisher = "American Physical Society",
2506 notes = "dft, exchange and correlation",
2510 title = "Strain-stabilized highly concentrated pseudomorphic
2511 $Si1-x$$Cx$ layers in Si",
2512 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2514 journal = "Phys. Rev. Lett.",
2517 pages = "3578--3581",
2521 doi = "10.1103/PhysRevLett.72.3578",
2522 publisher = "American Physical Society",
2523 notes = "high c concentration in si, heterostructure, strained
2528 title = "Electron Transport Model for Strained Silicon-Carbon
2530 author = "Shu-Tong Chang and Chung-Yi Lin",
2531 journal = "Japanese J. Appl. Phys.",
2534 pages = "2257--2262",
2537 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2538 doi = "10.1143/JJAP.44.2257",
2539 publisher = "The Japan Society of Applied Physics",
2540 notes = "enhance of electron mobility in starined si",
2544 author = "H. J. Osten and P. Gaworzewski",
2546 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2547 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2551 journal = "J. Appl. Phys.",
2554 pages = "4977--4981",
2555 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2556 semiconductors; semiconductor epitaxial layers; carrier
2557 density; Hall mobility; interstitials; defect states",
2558 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2559 doi = "10.1063/1.366364",
2560 notes = "charge transport in strained si",
2564 title = "Carbon-mediated aggregation of self-interstitials in
2565 silicon: {A} large-scale molecular dynamics study",
2566 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2567 journal = "Phys. Rev. B",
2574 doi = "10.1103/PhysRevB.69.155214",
2575 publisher = "American Physical Society",
2576 notes = "simulation using promising tersoff reparametrization",
2580 title = "Event-Based Relaxation of Continuous Disordered
2582 author = "G. T. Barkema and Normand Mousseau",
2583 journal = "Phys. Rev. Lett.",
2586 pages = "4358--4361",
2590 doi = "10.1103/PhysRevLett.77.4358",
2591 publisher = "American Physical Society",
2592 notes = "activation relaxation technique, art, speed up slow
2597 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2598 Minoukadeh and F. Willaime",
2600 title = "Some improvements of the activation-relaxation
2601 technique method for finding transition pathways on
2602 potential energy surfaces",
2605 journal = "J. Chem. Phys.",
2611 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2612 surfaces; vacancies (crystal)",
2613 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2614 doi = "10.1063/1.3088532",
2615 notes = "improvements to art, refs for methods to find
2616 transition pathways",
2619 @Article{parrinello81,
2620 author = "M. Parrinello and A. Rahman",
2622 title = "Polymorphic transitions in single crystals: {A} new
2623 molecular dynamics method",
2626 journal = "J. Appl. Phys.",
2629 pages = "7182--7190",
2630 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2631 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2632 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2633 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2634 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2636 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2637 doi = "10.1063/1.328693",
2640 @Article{stillinger85,
2641 title = "Computer simulation of local order in condensed phases
2643 author = "Frank H. Stillinger and Thomas A. Weber",
2644 journal = "Phys. Rev. B",
2647 pages = "5262--5271",
2651 doi = "10.1103/PhysRevB.31.5262",
2652 publisher = "American Physical Society",
2656 title = "Empirical potential for hydrocarbons for use in
2657 simulating the chemical vapor deposition of diamond
2659 author = "Donald W. Brenner",
2660 journal = "Phys. Rev. B",
2663 pages = "9458--9471",
2667 doi = "10.1103/PhysRevB.42.9458",
2668 publisher = "American Physical Society",
2669 notes = "brenner hydro carbons",
2673 title = "Modeling of Covalent Bonding in Solids by Inversion of
2674 Cohesive Energy Curves",
2675 author = "Martin Z. Bazant and Efthimios Kaxiras",
2676 journal = "Phys. Rev. Lett.",
2679 pages = "4370--4373",
2683 doi = "10.1103/PhysRevLett.77.4370",
2684 publisher = "American Physical Society",
2685 notes = "first si edip",
2689 title = "Environment-dependent interatomic potential for bulk
2691 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2693 journal = "Phys. Rev. B",
2696 pages = "8542--8552",
2700 doi = "10.1103/PhysRevB.56.8542",
2701 publisher = "American Physical Society",
2702 notes = "second si edip",
2706 title = "Interatomic potential for silicon defects and
2708 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2709 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2710 journal = "Phys. Rev. B",
2713 pages = "2539--2550",
2717 doi = "10.1103/PhysRevB.58.2539",
2718 publisher = "American Physical Society",
2719 notes = "latest si edip, good dislocation explanation",
2723 title = "{PARCAS} molecular dynamics code",
2724 author = "K. Nordlund",
2729 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2731 author = "Arthur F. Voter",
2732 journal = "Phys. Rev. Lett.",
2735 pages = "3908--3911",
2739 doi = "10.1103/PhysRevLett.78.3908",
2740 publisher = "American Physical Society",
2741 notes = "hyperdynamics, accelerated md",
2745 author = "Arthur F. Voter",
2747 title = "A method for accelerating the molecular dynamics
2748 simulation of infrequent events",
2751 journal = "J. Chem. Phys.",
2754 pages = "4665--4677",
2755 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2756 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2757 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2758 energy functions; surface diffusion; reaction kinetics
2759 theory; potential energy surfaces",
2760 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2761 doi = "10.1063/1.473503",
2762 notes = "improved hyperdynamics md",
2765 @Article{sorensen2000,
2766 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2768 title = "Temperature-accelerated dynamics for simulation of
2772 journal = "J. Chem. Phys.",
2775 pages = "9599--9606",
2776 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2777 MOLECULAR DYNAMICS METHOD; surface diffusion",
2778 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2779 doi = "10.1063/1.481576",
2780 notes = "temperature accelerated dynamics, tad",
2784 title = "Parallel replica method for dynamics of infrequent
2786 author = "Arthur F. Voter",
2787 journal = "Phys. Rev. B",
2790 pages = "R13985--R13988",
2794 doi = "10.1103/PhysRevB.57.R13985",
2795 publisher = "American Physical Society",
2796 notes = "parallel replica method, accelerated md",
2800 author = "Xiongwu Wu and Shaomeng Wang",
2802 title = "Enhancing systematic motion in molecular dynamics
2806 journal = "J. Chem. Phys.",
2809 pages = "9401--9410",
2810 keywords = "molecular dynamics method; argon; Lennard-Jones
2811 potential; crystallisation; liquid theory",
2812 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2813 doi = "10.1063/1.478948",
2814 notes = "self guided md, sgmd, accelerated md, enhancing
2818 @Article{choudhary05,
2819 author = "Devashish Choudhary and Paulette Clancy",
2821 title = "Application of accelerated molecular dynamics schemes
2822 to the production of amorphous silicon",
2825 journal = "J. Chem. Phys.",
2831 keywords = "molecular dynamics method; silicon; glass structure;
2832 amorphous semiconductors",
2833 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2834 doi = "10.1063/1.1878733",
2835 notes = "explanation of sgmd and hyper md, applied to amorphous
2840 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2842 title = "Carbon precipitation in silicon: Why is it so
2846 journal = "Appl. Phys. Lett.",
2849 pages = "3336--3338",
2850 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2851 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2853 URL = "http://link.aip.org/link/?APL/62/3336/1",
2854 doi = "10.1063/1.109063",
2855 notes = "interfacial energy of cubic sic and si, si self
2856 interstitials necessary for precipitation, volume
2857 decrease, high interface energy",
2860 @Article{chaussende08,
2861 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2862 journal = "J. Cryst. Growth",
2867 note = "Proceedings of the E-MRS Conference, Symposium G -
2868 Substrates of Wide Bandgap Materials",
2870 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2871 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2872 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2873 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2874 and A. Andreadou and E. K. Polychroniadis and C.
2875 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2876 notes = "3c-sic crystal growth, sic fabrication + links,
2880 @Article{chaussende07,
2881 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2882 title = "Status of Si{C} bulk growth processes",
2883 journal = "Journal of Physics D: Applied Physics",
2887 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2889 notes = "review of sic single crystal growth methods, process
2894 title = "Forces in Molecules",
2895 author = "R. P. Feynman",
2896 journal = "Phys. Rev.",
2903 doi = "10.1103/PhysRev.56.340",
2904 publisher = "American Physical Society",
2905 notes = "hellmann feynman forces",
2909 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2910 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2911 their Contrasting Properties",
2912 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2914 journal = "Phys. Rev. Lett.",
2921 doi = "10.1103/PhysRevLett.84.943",
2922 publisher = "American Physical Society",
2923 notes = "si sio2 and sic sio2 interface",
2926 @Article{djurabekova08,
2927 title = "Atomistic simulation of the interface structure of Si
2928 nanocrystals embedded in amorphous silica",
2929 author = "Flyura Djurabekova and Kai Nordlund",
2930 journal = "Phys. Rev. B",
2937 doi = "10.1103/PhysRevB.77.115325",
2938 publisher = "American Physical Society",
2939 notes = "nc-si in sio2, interface energy, nc construction,
2940 angular distribution, coordination",
2944 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2945 W. Liang and J. Zou",
2947 title = "Nature of interfacial defects and their roles in
2948 strain relaxation at highly lattice mismatched
2949 3{C}-Si{C}/Si (001) interface",
2952 journal = "J. Appl. Phys.",
2958 keywords = "anelastic relaxation; crystal structure; dislocations;
2959 elemental semiconductors; semiconductor growth;
2960 semiconductor thin films; silicon; silicon compounds;
2961 stacking faults; wide band gap semiconductors",
2962 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2963 doi = "10.1063/1.3234380",
2964 notes = "sic/si interface, follow refs, tem image
2965 deconvolution, dislocation defects",
2968 @Article{kitabatake93,
2969 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2972 title = "Simulations and experiments of Si{C} heteroepitaxial
2973 growth on Si(001) surface",
2976 journal = "J. Appl. Phys.",
2979 pages = "4438--4445",
2980 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2981 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2982 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2983 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2984 doi = "10.1063/1.354385",
2985 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2989 @Article{kitabatake97,
2990 author = "Makoto Kitabatake",
2991 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2992 Heteroepitaxial Growth",
2993 publisher = "WILEY-VCH Verlag",
2995 journal = "physica status solidi (b)",
2998 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2999 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3000 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3004 title = "Strain relaxation and thermal stability of the
3005 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3007 journal = "Thin Solid Films",
3014 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3015 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3016 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3017 keywords = "Strain relaxation",
3018 keywords = "Interfaces",
3019 keywords = "Thermal stability",
3020 keywords = "Molecular dynamics",
3021 notes = "tersoff sic/si interface study",
3025 title = "Ab initio Study of Misfit Dislocations at the
3026 $Si{C}/Si(001)$ Interface",
3027 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3029 journal = "Phys. Rev. Lett.",
3036 doi = "10.1103/PhysRevLett.89.156101",
3037 publisher = "American Physical Society",
3038 notes = "sic/si interface study",
3041 @Article{pizzagalli03,
3042 title = "Theoretical investigations of a highly mismatched
3043 interface: Si{C}/Si(001)",
3044 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3046 journal = "Phys. Rev. B",
3053 doi = "10.1103/PhysRevB.68.195302",
3054 publisher = "American Physical Society",
3055 notes = "tersoff md and ab initio sic/si interface study",
3059 title = "Atomic configurations of dislocation core and twin
3060 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3061 electron microscopy",
3062 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3063 H. Zheng and J. W. Liang",
3064 journal = "Phys. Rev. B",
3071 doi = "10.1103/PhysRevB.75.184103",
3072 publisher = "American Physical Society",
3073 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3077 @Article{hornstra58,
3078 title = "Dislocations in the diamond lattice",
3079 journal = "Journal of Physics and Chemistry of Solids",
3086 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3087 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3088 author = "J. Hornstra",
3089 notes = "dislocations in diamond lattice",
3093 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3094 Ion `Hot' Implantation",
3095 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3096 Hirao and Naoki Arai and Tomio Izumi",
3097 journal = "Japanese J. Appl. Phys.",
3099 number = "Part 1, No. 2A",
3103 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3104 doi = "10.1143/JJAP.31.343",
3105 publisher = "The Japan Society of Applied Physics",
3106 notes = "c-c bonds in c implanted si, hot implantation
3107 efficiency, c-c hard to break by thermal annealing",
3110 @Article{eichhorn99,
3111 author = "F. Eichhorn and N. Schell and W. Matz and R.
3114 title = "Strain and Si{C} particle formation in silicon
3115 implanted with carbon ions of medium fluence studied by
3116 synchrotron x-ray diffraction",
3119 journal = "J. Appl. Phys.",
3122 pages = "4184--4187",
3123 keywords = "silicon; carbon; elemental semiconductors; chemical
3124 interdiffusion; ion implantation; X-ray diffraction;
3125 precipitation; semiconductor doping",
3126 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3127 doi = "10.1063/1.371344",
3128 notes = "sic conversion by ibs, detected substitutional carbon,
3129 expansion of si lattice",
3132 @Article{eichhorn02,
3133 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3134 Metzger and W. Matz and R. K{\"{o}}gler",
3136 title = "Structural relation between Si and Si{C} formed by
3137 carbon ion implantation",
3140 journal = "J. Appl. Phys.",
3143 pages = "1287--1292",
3144 keywords = "silicon compounds; wide band gap semiconductors; ion
3145 implantation; annealing; X-ray scattering; transmission
3146 electron microscopy",
3147 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3148 doi = "10.1063/1.1428105",
3149 notes = "3c-sic alignement to si host in ibs depending on
3150 temperature, might explain c into c sub trafo",
3154 author = "G Lucas and M Bertolus and L Pizzagalli",
3155 title = "An environment-dependent interatomic potential for
3156 silicon carbide: calculation of bulk properties,
3157 high-pressure phases, point and extended defects, and
3158 amorphous structures",
3159 journal = "J. Phys.: Condens. Matter",
3163 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3169 author = "J Godet and L Pizzagalli and S Brochard and P
3171 title = "Comparison between classical potentials and ab initio
3172 methods for silicon under large shear",
3173 journal = "J. Phys.: Condens. Matter",
3177 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3179 notes = "comparison of empirical potentials, stillinger weber,
3180 edip, tersoff, ab initio",
3183 @Article{moriguchi98,
3184 title = "Verification of Tersoff's Potential for Static
3185 Structural Analysis of Solids of Group-{IV} Elements",
3186 author = "Koji Moriguchi and Akira Shintani",
3187 journal = "Japanese J. Appl. Phys.",
3189 number = "Part 1, No. 2",
3193 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3194 doi = "10.1143/JJAP.37.414",
3195 publisher = "The Japan Society of Applied Physics",
3196 notes = "tersoff stringent test",
3199 @Article{mazzarolo01,
3200 title = "Low-energy recoils in crystalline silicon: Quantum
3202 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3203 Lulli and Eros Albertazzi",
3204 journal = "Phys. Rev. B",
3211 doi = "10.1103/PhysRevB.63.195207",
3212 publisher = "American Physical Society",
3215 @Article{holmstroem08,
3216 title = "Threshold defect production in silicon determined by
3217 density functional theory molecular dynamics
3219 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3220 journal = "Phys. Rev. B",
3227 doi = "10.1103/PhysRevB.78.045202",
3228 publisher = "American Physical Society",
3229 notes = "threshold displacement comparison empirical and ab
3233 @Article{nordlund97,
3234 title = "Repulsive interatomic potentials calculated using
3235 Hartree-Fock and density-functional theory methods",
3236 journal = "Nucl. Instrum. Methods Phys. Res. B",
3243 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3244 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3245 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3246 notes = "repulsive ab initio potential",
3250 title = "Efficiency of ab-initio total energy calculations for
3251 metals and semiconductors using a plane-wave basis
3253 journal = "Comput. Mater. Sci.",
3260 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3261 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3262 author = "G. Kresse and J. Furthm{\"{u}}ller",
3267 title = "Projector augmented-wave method",
3268 author = "P. E. Bl{\"o}chl",
3269 journal = "Phys. Rev. B",
3272 pages = "17953--17979",
3276 doi = "10.1103/PhysRevB.50.17953",
3277 publisher = "American Physical Society",
3278 notes = "paw method",
3282 title = "Norm-Conserving Pseudopotentials",
3283 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3284 journal = "Phys. Rev. Lett.",
3287 pages = "1494--1497",
3291 doi = "10.1103/PhysRevLett.43.1494",
3292 publisher = "American Physical Society",
3293 notes = "norm-conserving pseudopotentials",
3296 @Article{vanderbilt90,
3297 title = "Soft self-consistent pseudopotentials in a generalized
3298 eigenvalue formalism",
3299 author = "David Vanderbilt",
3300 journal = "Phys. Rev. B",
3303 pages = "7892--7895",
3307 doi = "10.1103/PhysRevB.41.7892",
3308 publisher = "American Physical Society",
3309 notes = "vasp pseudopotentials",
3313 title = "Accurate and simple density functional for the
3314 electronic exchange energy: Generalized gradient
3316 author = "John P. Perdew and Yue Wang",
3317 journal = "Phys. Rev. B",
3320 pages = "8800--8802",
3324 doi = "10.1103/PhysRevB.33.8800",
3325 publisher = "American Physical Society",
3326 notes = "rapid communication gga",
3330 title = "Generalized gradient approximations for exchange and
3331 correlation: {A} look backward and forward",
3332 journal = "Physica B: Condensed Matter",
3339 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3340 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3341 author = "John P. Perdew",
3342 notes = "gga overview",
3346 title = "Atoms, molecules, solids, and surfaces: Applications
3347 of the generalized gradient approximation for exchange
3349 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3350 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3351 and Carlos Fiolhais",
3352 journal = "Phys. Rev. B",
3355 pages = "6671--6687",
3359 doi = "10.1103/PhysRevB.46.6671",
3360 publisher = "American Physical Society",
3361 notes = "gga pw91 (as in vasp)",
3364 @Article{baldereschi73,
3365 title = "Mean-Value Point in the Brillouin Zone",
3366 author = "A. Baldereschi",
3367 journal = "Phys. Rev. B",
3370 pages = "5212--5215",
3374 doi = "10.1103/PhysRevB.7.5212",
3375 publisher = "American Physical Society",
3376 notes = "mean value k point",
3380 title = "Ab initio pseudopotential calculations of dopant
3382 journal = "Comput. Mater. Sci.",
3389 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3390 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3391 author = "Jing Zhu",
3392 keywords = "TED (transient enhanced diffusion)",
3393 keywords = "Boron dopant",
3394 keywords = "Carbon dopant",
3395 keywords = "Defect",
3396 keywords = "ab initio pseudopotential method",
3397 keywords = "Impurity cluster",
3398 notes = "binding of c to si interstitial, c in si defects",
3402 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3404 title = "Si{C} buried layer formation by ion beam synthesis at
3408 journal = "Appl. Phys. Lett.",
3411 pages = "2646--2648",
3412 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3413 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3414 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3415 ELECTRON MICROSCOPY",
3416 URL = "http://link.aip.org/link/?APL/66/2646/1",
3417 doi = "10.1063/1.113112",
3418 notes = "precipitation mechanism by substitutional carbon, si
3419 self interstitials react with further implanted c",
3423 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3424 Kolodzey and A. Hairie",
3426 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3430 journal = "J. Appl. Phys.",
3433 pages = "4631--4633",
3434 keywords = "silicon compounds; precipitation; localised modes;
3435 semiconductor epitaxial layers; infrared spectra;
3436 Fourier transform spectra; thermal stability;
3438 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3439 doi = "10.1063/1.368703",
3440 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3444 author = "R Jones and B J Coomer and P R Briddon",
3445 title = "Quantum mechanical modelling of defects in
3447 journal = "J. Phys.: Condens. Matter",
3451 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3453 notes = "ab inito dft intro, vibrational modes, c defect in
3458 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3459 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3460 J. E. Greene and S. G. Bishop",
3462 title = "Carbon incorporation pathways and lattice sites in
3463 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3464 molecular-beam epitaxy",
3467 journal = "J. Appl. Phys.",
3470 pages = "5716--5727",
3471 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3472 doi = "10.1063/1.1465122",
3473 notes = "c substitutional incorporation pathway, dft and expt",
3477 title = "Dynamic properties of interstitial carbon and
3478 carbon-carbon pair defects in silicon",
3479 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3481 journal = "Phys. Rev. B",
3484 pages = "2188--2194",
3488 doi = "10.1103/PhysRevB.55.2188",
3489 publisher = "American Physical Society",
3490 notes = "ab initio c in si and di-carbon defect, no formation
3491 energies, different migration barriers and paths",
3495 title = "Interstitial carbon and the carbon-carbon pair in
3496 silicon: Semiempirical electronic-structure
3498 author = "Matthew J. Burnard and Gary G. DeLeo",
3499 journal = "Phys. Rev. B",
3502 pages = "10217--10225",
3506 doi = "10.1103/PhysRevB.47.10217",
3507 publisher = "American Physical Society",
3508 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3509 carbon defect, formation energies",
3513 title = "Electronic structure of interstitial carbon in
3515 author = "Morgan Besson and Gary G. DeLeo",
3516 journal = "Phys. Rev. B",
3519 pages = "4028--4033",
3523 doi = "10.1103/PhysRevB.43.4028",
3524 publisher = "American Physical Society",
3528 title = "Review of atomistic simulations of surface diffusion
3529 and growth on semiconductors",
3530 journal = "Comput. Mater. Sci.",
3535 note = "Proceedings of the Workshop on Virtual Molecular Beam
3538 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3539 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3540 author = "Efthimios Kaxiras",
3541 notes = "might contain c 100 db formation energy, overview md,
3542 tight binding, first principles",
3545 @Article{kaukonen98,
3546 title = "Effect of {N} and {B} doping on the growth of {CVD}
3548 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3550 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3551 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3553 journal = "Phys. Rev. B",
3556 pages = "9965--9970",
3560 doi = "10.1103/PhysRevB.57.9965",
3561 publisher = "American Physical Society",
3562 notes = "constrained conjugate gradient relaxation technique
3567 title = "Correlation between the antisite pair and the ${DI}$
3569 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3570 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3572 journal = "Phys. Rev. B",
3579 doi = "10.1103/PhysRevB.67.155203",
3580 publisher = "American Physical Society",
3584 title = "Production and recovery of defects in Si{C} after
3585 irradiation and deformation",
3586 journal = "J. Nucl. Mater.",
3589 pages = "1803--1808",
3593 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3594 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3595 author = "J. Chen and P. Jung and H. Klein",
3599 title = "Accumulation, dynamic annealing and thermal recovery
3600 of ion-beam-induced disorder in silicon carbide",
3601 journal = "Nucl. Instrum. Methods Phys. Res. B",
3608 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3609 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3610 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3613 @Article{bockstedte03,
3614 title = "Ab initio study of the migration of intrinsic defects
3616 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3618 journal = "Phys. Rev. B",
3625 doi = "10.1103/PhysRevB.68.205201",
3626 publisher = "American Physical Society",
3627 notes = "defect migration in sic",
3631 title = "Theoretical study of vacancy diffusion and
3632 vacancy-assisted clustering of antisites in Si{C}",
3633 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3635 journal = "Phys. Rev. B",
3642 doi = "10.1103/PhysRevB.68.155208",
3643 publisher = "American Physical Society",
3647 journal = "Telegrafiya i Telefoniya bez Provodov",
3651 author = "O. V. Lossev",
3655 title = "Luminous carborundum detector and detection effect and
3656 oscillations with crystals",
3657 journal = "Philosophical Magazine Series 7",
3660 pages = "1024--1044",
3662 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3663 author = "O. V. Lossev",
3667 journal = "Physik. Zeitschr.",
3671 author = "O. V. Lossev",
3675 journal = "Physik. Zeitschr.",
3679 author = "O. V. Lossev",
3683 journal = "Physik. Zeitschr.",
3687 author = "O. V. Lossev",
3691 title = "A note on carborundum",
3692 journal = "Electrical World",
3696 author = "H. J. Round",
3699 @Article{vashishath08,
3700 title = "Recent trends in silicon carbide device research",
3701 journal = "Mj. Int. J. Sci. Tech.",
3706 author = "Munish Vashishath and Ashoke K. Chatterjee",
3707 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3708 notes = "sic polytype electronic properties",
3712 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3714 title = "Growth and Properties of beta-Si{C} Single Crystals",
3717 journal = "Journal of Applied Physics",
3721 URL = "http://link.aip.org/link/?JAP/37/333/1",
3722 doi = "10.1063/1.1707837",
3723 notes = "sic melt growth",
3727 author = "A. E. van Arkel and J. H. de Boer",
3728 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3730 publisher = "WILEY-VCH Verlag GmbH",
3732 journal = "Z. Anorg. Chem.",
3735 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3736 doi = "10.1002/zaac.19251480133",
3737 notes = "van arkel apparatus",
3741 author = "K. Moers",
3743 journal = "Z. Anorg. Chem.",
3746 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3751 author = "J. T. Kendall",
3752 title = "Electronic Conduction in Silicon Carbide",
3755 journal = "The Journal of Chemical Physics",
3759 URL = "http://link.aip.org/link/?JCP/21/821/1",
3760 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3765 author = "J. A. Lely",
3767 journal = "Ber. Deut. Keram. Ges.",
3770 notes = "lely sublimation growth process",
3773 @Article{knippenberg63,
3774 author = "W. F. Knippenberg",
3776 journal = "Philips Res. Repts.",
3779 notes = "acheson process",
3782 @Article{hoffmann82,
3783 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3786 title = "Silicon carbide blue light emitting diodes with
3787 improved external quantum efficiency",
3790 journal = "Journal of Applied Physics",
3793 pages = "6962--6967",
3794 keywords = "light emitting diodes; silicon carbides; quantum
3795 efficiency; visible radiation; experimental data;
3796 epitaxy; fabrication; medium temperature; layers;
3797 aluminium; nitrogen; substrates; pn junctions;
3798 electroluminescence; spectra; current density;
3800 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3801 doi = "10.1063/1.330041",
3802 notes = "blue led, sublimation process",
3806 author = "Philip Neudeck",
3807 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3808 Road 44135 Cleveland OH",
3809 title = "Progress in silicon carbide semiconductor electronics
3811 journal = "Journal of Electronic Materials",
3812 publisher = "Springer Boston",
3814 keyword = "Chemistry and Materials Science",
3818 URL = "http://dx.doi.org/10.1007/BF02659688",
3819 note = "10.1007/BF02659688",
3821 notes = "sic data, advantages of 3c sic",
3824 @Article{bhatnagar93,
3825 author = "M. Bhatnagar and B. J. Baliga",
3826 journal = "Electron Devices, IEEE Transactions on",
3827 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3834 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3835 rectifiers;Si;SiC;breakdown voltages;drift region
3836 properties;output characteristics;power MOSFETs;power
3837 semiconductor devices;switching characteristics;thermal
3838 analysis;Schottky-barrier diodes;electric breakdown of
3839 solids;insulated gate field effect transistors;power
3840 transistors;semiconductor materials;silicon;silicon
3841 compounds;solid-state rectifiers;thermal analysis;",
3842 doi = "10.1109/16.199372",
3844 notes = "comparison 3c 6h sic and si devices",
3848 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3849 A. Powell and C. S. Salupo and L. G. Matus",
3850 journal = "Electron Devices, IEEE Transactions on",
3851 title = "Electrical properties of epitaxial 3{C}- and
3852 6{H}-Si{C} p-n junction diodes produced side-by-side on
3853 6{H}-Si{C} substrates",
3859 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3860 C;6H-SiC layers;6H-SiC substrates;CVD
3861 process;SiC;chemical vapor deposition;doping;electrical
3862 properties;epitaxial layers;light
3863 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3864 diodes;polytype;rectification characteristics;reverse
3865 leakage current;reverse voltages;temperature;leakage
3866 currents;power electronics;semiconductor
3867 diodes;semiconductor epitaxial layers;semiconductor
3868 growth;semiconductor materials;silicon
3869 compounds;solid-state rectifiers;substrates;vapour
3870 phase epitaxial growth;",
3871 doi = "10.1109/16.285038",
3873 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3878 author = "N. Schulze and D. L. Barrett and G. Pensl",
3880 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3881 single crystals by physical vapor transport",
3884 journal = "Applied Physics Letters",
3887 pages = "1632--1634",
3888 keywords = "silicon compounds; semiconductor materials;
3889 semiconductor growth; crystal growth from vapour;
3890 photoluminescence; Hall mobility",
3891 URL = "http://link.aip.org/link/?APL/72/1632/1",
3892 doi = "10.1063/1.121136",
3893 notes = "micropipe free 6h-sic pvt growth",
3897 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3899 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3902 journal = "Applied Physics Letters",
3906 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3907 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3908 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3909 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3911 URL = "http://link.aip.org/link/?APL/50/221/1",
3912 doi = "10.1063/1.97667",
3913 notes = "apb 3c-sic heteroepitaxy on si",
3916 @Article{shibahara86,
3917 title = "Surface morphology of cubic Si{C}(100) grown on
3918 Si(100) by chemical vapor deposition",
3919 journal = "Journal of Crystal Growth",
3926 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3927 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3928 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3930 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3933 @Article{desjardins96,
3934 author = "P. Desjardins and J. E. Greene",
3936 title = "Step-flow epitaxial growth on two-domain surfaces",
3939 journal = "Journal of Applied Physics",
3942 pages = "1423--1434",
3943 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3944 FILM GROWTH; SURFACE STRUCTURE",
3945 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3946 doi = "10.1063/1.360980",
3947 notes = "apb model",
3951 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3953 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3954 carbonization of silicon",
3957 journal = "Journal of Applied Physics",
3960 pages = "2070--2073",
3961 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3962 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3964 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3965 doi = "10.1063/1.360184",
3966 notes = "ssmbe of sic on si, lower temperatures",
3970 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3971 {MBE} using surface superstructure",
3972 journal = "Journal of Crystal Growth",
3979 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3980 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3981 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3982 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3983 notes = "gas source mbe of 3c-sic on 6h-sic",
3986 @Article{yoshinobu92,
3987 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3988 and Takashi Fuyuki and Hiroyuki Matsunami",
3990 title = "Lattice-matched epitaxial growth of single crystalline
3991 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3992 molecular beam epitaxy",
3995 journal = "Applied Physics Letters",
3999 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4000 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4001 INTERFACE STRUCTURE",
4002 URL = "http://link.aip.org/link/?APL/60/824/1",
4003 doi = "10.1063/1.107430",
4004 notes = "gas source mbe of 3c-sic on 6h-sic",
4007 @Article{yoshinobu90,
4008 title = "Atomic level control in gas source {MBE} growth of
4010 journal = "Journal of Crystal Growth",
4017 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4018 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4019 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4020 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4021 notes = "gas source mbe of 3c-sic on 3c-sic",
4025 title = "Atomic layer epitaxy controlled by surface
4026 superstructures in Si{C}",
4027 journal = "Thin Solid Films",
4034 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4035 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4036 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4038 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4043 title = "Microscopic mechanisms of accurate layer-by-layer
4044 growth of [beta]-Si{C}",
4045 journal = "Thin Solid Films",
4052 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4053 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4054 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4055 and S. Misawa and E. Sakuma and S. Yoshida",
4056 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4061 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4063 title = "Effects of gas flow ratio on silicon carbide thin film
4064 growth mode and polytype formation during gas-source
4065 molecular beam epitaxy",
4068 journal = "Applied Physics Letters",
4071 pages = "2851--2853",
4072 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4073 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4074 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4076 URL = "http://link.aip.org/link/?APL/65/2851/1",
4077 doi = "10.1063/1.112513",
4078 notes = "gas source mbe of 6h-sic on 6h-sic",
4082 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4083 title = "Heterointerface Control and Epitaxial Growth of
4084 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4085 publisher = "WILEY-VCH Verlag",
4087 journal = "physica status solidi (b)",
4090 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4095 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4096 journal = "Journal of Crystal Growth",
4103 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4104 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4105 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4106 keywords = "Reflection high-energy electron diffraction (RHEED)",
4107 keywords = "Scanning electron microscopy (SEM)",
4108 keywords = "Silicon carbide",
4109 keywords = "Silicon",
4110 keywords = "Island growth",
4111 notes = "lower temperature, 550-700",
4114 @Article{hatayama95,
4115 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4116 on Si using hydrocarbon radicals by gas source
4117 molecular beam epitaxy",
4118 journal = "Journal of Crystal Growth",
4125 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4126 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4127 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4128 and Hiroyuki Matsunami",
4132 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4133 title = "The Preference of Silicon Carbide for Growth in the
4134 Metastable Cubic Form",
4135 journal = "Journal of the American Ceramic Society",
4138 publisher = "Blackwell Publishing Ltd",
4140 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4141 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4142 pages = "2630--2633",
4143 keywords = "silicon carbide, crystal growth, crystal structure,
4144 calculations, stability",
4146 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4147 polytype dft calculation refs",
4150 @Article{allendorf91,
4151 title = "The adsorption of {H}-atoms on polycrystalline
4152 [beta]-silicon carbide",
4153 journal = "Surface Science",
4160 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4161 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4162 author = "Mark D. Allendorf and Duane A. Outka",
4163 notes = "h adsorption on 3c-sic",
4166 @Article{eaglesham93,
4167 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4168 D. P. Adams and S. M. Yalisove",
4170 title = "Effect of {H} on Si molecular-beam epitaxy",
4173 journal = "Journal of Applied Physics",
4176 pages = "6615--6618",
4177 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4178 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4179 DIFFUSION; ADSORPTION",
4180 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4181 doi = "10.1063/1.355101",
4182 notes = "h incorporation on si surface, lower surface
4187 author = "Ronald C. Newman",
4188 title = "Carbon in Crystalline Silicon",
4189 journal = "MRS Online Proceedings Library",
4194 doi = "10.1557/PROC-59-403",
4195 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4196 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4200 title = "The diffusivity of carbon in silicon",
4201 journal = "Journal of Physics and Chemistry of Solids",
4208 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4209 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4210 author = "R. C. Newman and J. Wakefield",
4211 notes = "diffusivity of substitutional c in si",
4215 author = "U. Gösele",
4216 title = "The Role of Carbon and Point Defects in Silicon",
4217 journal = "MRS Online Proceedings Library",
4222 doi = "10.1557/PROC-59-419",
4223 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4224 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4228 title = "Convergence of supercell calculations for point
4229 defects in semiconductors: Vacancy in silicon",
4230 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4232 journal = "Phys. Rev. B",
4235 pages = "1318--1325",
4239 doi = "10.1103/PhysRevB.58.1318",
4240 publisher = "American Physical Society",
4241 notes = "convergence k point supercell size, vacancy in
4246 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4247 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4248 K{\"{o}}gler and W. Skorupa",
4250 title = "Spectroscopic characterization of phases formed by
4251 high-dose carbon ion implantation in silicon",
4254 journal = "Journal of Applied Physics",
4257 pages = "2978--2984",
4258 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4259 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4260 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4261 DEPENDENCE; PRECIPITATES; ANNEALING",
4262 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4263 doi = "10.1063/1.358714",