2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
122 notes = "dual implantation, sic prec enhanced by vacancies,
123 precipitation by interstitial and substitutional
124 carbon, both mechanisms explained + refs",
128 title = "Carbon-mediated effects in silicon and in
129 silicon-related materials",
130 journal = "Materials Chemistry and Physics",
137 doi = "DOI: 10.1016/0254-0584(95)01673-I",
138 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
139 author = "W. Skorupa and R. A. Yankov",
140 notes = "review of silicon carbon compound",
144 author = "P. S. de Laplace",
145 title = "Th\'eorie analytique des probabilit\'es",
146 series = "Oeuvres Compl\`etes de Laplace",
148 publisher = "Gauthier-Villars",
152 @Article{mattoni2007,
153 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
154 title = "{Atomistic modeling of brittleness in covalent
156 journal = "Phys. Rev. B",
162 doi = "10.1103/PhysRevB.76.224103",
163 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
164 longe(r)-range-interactions, brittle propagation of
165 fracture, more available potentials, universal energy
166 relation (uer), minimum range model (mrm)",
170 title = "Comparative study of silicon empirical interatomic
172 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
173 journal = "Phys. Rev. B",
176 pages = "2250--2279",
180 doi = "10.1103/PhysRevB.46.2250",
181 publisher = "American Physical Society",
182 notes = "comparison of classical potentials for si",
186 title = "Stress relaxation in $a-Si$ induced by ion
188 author = "H. M. Urbassek M. Koster",
189 journal = "Phys. Rev. B",
192 pages = "11219--11224",
196 doi = "10.1103/PhysRevB.62.11219",
197 publisher = "American Physical Society",
198 notes = "virial derivation for 3-body tersoff potential",
201 @Article{breadmore99,
202 title = "Direct simulation of ion-beam-induced stressing and
203 amorphization of silicon",
204 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
205 journal = "Phys. Rev. B",
208 pages = "12610--12616",
212 doi = "10.1103/PhysRevB.60.12610",
213 publisher = "American Physical Society",
214 notes = "virial derivation for 3-body tersoff potential",
218 title = "First-Principles Calculation of Stress",
219 author = "O. H. Nielsen and Richard M. Martin",
220 journal = "Phys. Rev. Lett.",
227 doi = "10.1103/PhysRevLett.50.697",
228 publisher = "American Physical Society",
229 notes = "generalization of virial theorem",
233 title = "Quantum-mechanical theory of stress and force",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. B",
238 pages = "3780--3791",
242 doi = "10.1103/PhysRevB.32.3780",
243 publisher = "American Physical Society",
244 notes = "dft virial stress and forces",
248 author = "Henri Moissan",
249 title = "Nouvelles recherches sur la météorité de Cañon
251 journal = "Comptes rendus de l'Académie des Sciences",
258 author = "Y. S. Park",
259 title = "Si{C} Materials and Devices",
260 publisher = "Academic Press",
261 address = "San Diego",
266 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
267 Calvin H. Carter Jr. and D. Asbury",
268 title = "Si{C} Seeded Boule Growth",
269 journal = "Materials Science Forum",
273 notes = "modified lely process, micropipes",
277 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
278 Thermodynamical Properties of Lennard-Jones Molecules",
279 author = "Loup Verlet",
280 journal = "Phys. Rev.",
286 doi = "10.1103/PhysRev.159.98",
287 publisher = "American Physical Society",
288 notes = "velocity verlet integration algorithm equation of
292 @Article{berendsen84,
293 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
294 Gunsteren and A. DiNola and J. R. Haak",
296 title = "Molecular dynamics with coupling to an external bath",
299 journal = "J. Chem. Phys.",
302 pages = "3684--3690",
303 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
304 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
305 URL = "http://link.aip.org/link/?JCP/81/3684/1",
306 doi = "10.1063/1.448118",
307 notes = "berendsen thermostat barostat",
311 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
313 title = "Molecular dynamics determination of defect energetics
314 in beta -Si{C} using three representative empirical
316 journal = "Modell. Simul. Mater. Sci. Eng.",
320 URL = "http://stacks.iop.org/0965-0393/3/615",
321 notes = "comparison of tersoff, pearson and eam for defect
322 energetics in sic; (m)eam parameters for sic",
327 title = "Relationship between the embedded-atom method and
329 author = "Donald W. Brenner",
330 journal = "Phys. Rev. Lett.",
337 doi = "10.1103/PhysRevLett.63.1022",
338 publisher = "American Physical Society",
339 notes = "relation of tersoff and eam potential",
343 title = "Molecular-dynamics study of self-interstitials in
345 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
346 journal = "Phys. Rev. B",
349 pages = "9552--9558",
353 doi = "10.1103/PhysRevB.35.9552",
354 publisher = "American Physical Society",
355 notes = "selft-interstitials in silicon, stillinger-weber,
356 calculation of defect formation energy, defect
361 title = "Extended interstitials in silicon and germanium",
362 author = "H. R. Schober",
363 journal = "Phys. Rev. B",
366 pages = "13013--13015",
370 doi = "10.1103/PhysRevB.39.13013",
371 publisher = "American Physical Society",
372 notes = "stillinger-weber silicon 110 stable and metastable
373 dumbbell configuration",
377 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
378 Defect accumulation, topological features, and
380 author = "F. Gao and W. J. Weber",
381 journal = "Phys. Rev. B",
388 doi = "10.1103/PhysRevB.66.024106",
389 publisher = "American Physical Society",
390 notes = "sic intro, si cascade in 3c-sic, amorphization,
391 tersoff modified, pair correlation of amorphous sic, md
395 @Article{devanathan98,
396 title = "Computer simulation of a 10 ke{V} Si displacement
398 journal = "Nucl. Instrum. Methods Phys. Res. B",
404 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
405 author = "R. Devanathan and W. J. Weber and T. Diaz de la
407 notes = "modified tersoff short range potential, ab initio
411 @Article{devanathan98_2,
412 title = "Displacement threshold energies in [beta]-Si{C}",
413 journal = "J. Nucl. Mater.",
419 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
420 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
422 notes = "modified tersoff, ab initio, combined ab initio
426 @Article{kitabatake00,
427 title = "Si{C}/Si heteroepitaxial growth",
428 author = "M. Kitabatake",
429 journal = "Thin Solid Films",
434 notes = "md simulation, sic si heteroepitaxy, mbe",
438 title = "Intrinsic point defects in crystalline silicon:
439 Tight-binding molecular dynamics studies of
440 self-diffusion, interstitial-vacancy recombination, and
442 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
444 journal = "Phys. Rev. B",
447 pages = "14279--14289",
451 doi = "10.1103/PhysRevB.55.14279",
452 publisher = "American Physical Society",
453 notes = "si self interstitial, diffusion, tbmd",
457 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
460 title = "A kinetic Monte--Carlo study of the effective
461 diffusivity of the silicon self-interstitial in the
462 presence of carbon and boron",
465 journal = "J. Appl. Phys.",
468 pages = "1963--1967",
469 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
470 CARBON ADDITIONS; BORON ADDITIONS; elemental
471 semiconductors; self-diffusion",
472 URL = "http://link.aip.org/link/?JAP/84/1963/1",
473 doi = "10.1063/1.368328",
474 notes = "kinetic monte carlo of si self interstitial
479 title = "Barrier to Migration of the Silicon
481 author = "Y. Bar-Yam and J. D. Joannopoulos",
482 journal = "Phys. Rev. Lett.",
485 pages = "1129--1132",
489 doi = "10.1103/PhysRevLett.52.1129",
490 publisher = "American Physical Society",
491 notes = "si self-interstitial migration barrier",
494 @Article{bar-yam84_2,
495 title = "Electronic structure and total-energy migration
496 barriers of silicon self-interstitials",
497 author = "Y. Bar-Yam and J. D. Joannopoulos",
498 journal = "Phys. Rev. B",
501 pages = "1844--1852",
505 doi = "10.1103/PhysRevB.30.1844",
506 publisher = "American Physical Society",
510 title = "First-principles calculations of self-diffusion
511 constants in silicon",
512 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
513 and D. B. Laks and W. Andreoni and S. T. Pantelides",
514 journal = "Phys. Rev. Lett.",
517 pages = "2435--2438",
521 doi = "10.1103/PhysRevLett.70.2435",
522 publisher = "American Physical Society",
523 notes = "si self int diffusion by ab initio md, formation
524 entropy calculations",
528 title = "Tight-binding theory of native point defects in
530 author = "L. Colombo",
531 journal = "Annu. Rev. Mater. Res.",
536 doi = "10.1146/annurev.matsci.32.111601.103036",
537 publisher = "Annual Reviews",
538 notes = "si self interstitial, tbmd, virial stress",
541 @Article{al-mushadani03,
542 title = "Free-energy calculations of intrinsic point defects in
544 author = "O. K. Al-Mushadani and R. J. Needs",
545 journal = "Phys. Rev. B",
552 doi = "10.1103/PhysRevB.68.235205",
553 publisher = "American Physical Society",
554 notes = "formation energies of intrinisc point defects in
555 silicon, si self interstitials, free energy",
558 @Article{goedecker02,
559 title = "A Fourfold Coordinated Point Defect in Silicon",
560 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
561 journal = "Phys. Rev. Lett.",
568 doi = "10.1103/PhysRevLett.88.235501",
569 publisher = "American Physical Society",
570 notes = "first time ffcd, fourfold coordinated point defect in
575 title = "Ab initio molecular dynamics simulation of
576 self-interstitial diffusion in silicon",
577 author = "Beat Sahli and Wolfgang Fichtner",
578 journal = "Phys. Rev. B",
585 doi = "10.1103/PhysRevB.72.245210",
586 publisher = "American Physical Society",
587 notes = "si self int, diffusion, barrier height, voronoi
592 title = "Ab initio calculations of the interaction between
593 native point defects in silicon",
594 journal = "Mater. Sci. Eng., B",
599 note = "EMRS 2005, Symposium D - Materials Science and Device
600 Issues for Future Technologies",
602 doi = "DOI: 10.1016/j.mseb.2005.08.072",
603 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
604 author = "G. Hobler and G. Kresse",
605 notes = "vasp intrinsic si defect interaction study, capture
610 title = "Ab initio study of self-diffusion in silicon over a
611 wide temperature range: Point defect states and
612 migration mechanisms",
613 author = "Shangyi Ma and Shaoqing Wang",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.81.193203",
622 publisher = "American Physical Society",
623 notes = "si self interstitial diffusion + refs",
627 title = "Atomistic simulations on the thermal stability of the
628 antisite pair in 3{C}- and 4{H}-Si{C}",
629 author = "M. Posselt and F. Gao and W. J. Weber",
630 journal = "Phys. Rev. B",
637 doi = "10.1103/PhysRevB.73.125206",
638 publisher = "American Physical Society",
642 title = "Correlation between self-diffusion in Si and the
643 migration mechanisms of vacancies and
644 self-interstitials: An atomistic study",
645 author = "M. Posselt and F. Gao and H. Bracht",
646 journal = "Phys. Rev. B",
653 doi = "10.1103/PhysRevB.78.035208",
654 publisher = "American Physical Society",
655 notes = "si self-interstitial and vacancy diffusion, stillinger
660 title = "Ab initio and empirical-potential studies of defect
661 properties in $3{C}-Si{C}$",
662 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
664 journal = "Phys. Rev. B",
671 doi = "10.1103/PhysRevB.64.245208",
672 publisher = "American Physical Society",
673 notes = "defects in 3c-sic",
677 title = "Empirical potential approach for defect properties in
679 journal = "Nucl. Instrum. Methods Phys. Res. B",
686 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
687 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
688 author = "Fei Gao and William J. Weber",
689 keywords = "Empirical potential",
690 keywords = "Defect properties",
691 keywords = "Silicon carbide",
692 keywords = "Computer simulation",
693 notes = "sic potential, brenner type, like erhart/albe",
697 title = "Atomistic study of intrinsic defect migration in
699 author = "Fei Gao and William J. Weber and M. Posselt and V.
701 journal = "Phys. Rev. B",
708 doi = "10.1103/PhysRevB.69.245205",
709 publisher = "American Physical Society",
710 notes = "defect migration in sic",
714 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
717 title = "Ab Initio atomic simulations of antisite pair recovery
718 in cubic silicon carbide",
721 journal = "Appl. Phys. Lett.",
727 keywords = "ab initio calculations; silicon compounds; antisite
728 defects; wide band gap semiconductors; molecular
729 dynamics method; density functional theory;
730 electron-hole recombination; photoluminescence;
731 impurities; diffusion",
732 URL = "http://link.aip.org/link/?APL/90/221915/1",
733 doi = "10.1063/1.2743751",
736 @Article{mattoni2002,
737 title = "Self-interstitial trapping by carbon complexes in
738 crystalline silicon",
739 author = "A. Mattoni and F. Bernardini and L. Colombo",
740 journal = "Phys. Rev. B",
747 doi = "10.1103/PhysRevB.66.195214",
748 publisher = "American Physical Society",
749 notes = "c in c-si, diffusion, interstitial configuration +
750 links, interaction of carbon and silicon interstitials,
751 tersoff suitability",
755 title = "Calculations of Silicon Self-Interstitial Defects",
756 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
758 journal = "Phys. Rev. Lett.",
761 pages = "2351--2354",
765 doi = "10.1103/PhysRevLett.83.2351",
766 publisher = "American Physical Society",
767 notes = "nice images of the defects, si defect overview +
772 title = "Identification of the migration path of interstitial
774 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
775 journal = "Phys. Rev. B",
778 pages = "7439--7442",
782 doi = "10.1103/PhysRevB.50.7439",
783 publisher = "American Physical Society",
784 notes = "carbon interstitial migration path shown, 001 c-si
789 title = "Theory of carbon-carbon pairs in silicon",
790 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
791 journal = "Phys. Rev. B",
794 pages = "9845--9850",
798 doi = "10.1103/PhysRevB.58.9845",
799 publisher = "American Physical Society",
800 notes = "c_i c_s pair configuration, theoretical results",
804 title = "Bistable interstitial-carbon--substitutional-carbon
806 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
808 journal = "Phys. Rev. B",
811 pages = "5765--5783",
815 doi = "10.1103/PhysRevB.42.5765",
816 publisher = "American Physical Society",
817 notes = "c_i c_s pair configuration, experimental results",
821 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
822 Shifeng Lu and Xiang-Yang Liu",
824 title = "Ab initio modeling and experimental study of {C}--{B}
828 journal = "Appl. Phys. Lett.",
832 keywords = "silicon; boron; carbon; elemental semiconductors;
833 impurity-defect interactions; ab initio calculations;
834 secondary ion mass spectra; diffusion; interstitials",
835 URL = "http://link.aip.org/link/?APL/80/52/1",
836 doi = "10.1063/1.1430505",
837 notes = "c-c 100 split, lower as a and b states of capaz",
841 title = "Ab initio investigation of carbon-related defects in
843 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
845 journal = "Phys. Rev. B",
848 pages = "12554--12557",
852 doi = "10.1103/PhysRevB.47.12554",
853 publisher = "American Physical Society",
854 notes = "c interstitials in crystalline silicon",
858 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
860 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
861 Sokrates T. Pantelides",
862 journal = "Phys. Rev. Lett.",
865 pages = "1814--1817",
869 doi = "10.1103/PhysRevLett.52.1814",
870 publisher = "American Physical Society",
871 notes = "microscopic theory diffusion silicon dft migration
876 title = "Unified Approach for Molecular Dynamics and
877 Density-Functional Theory",
878 author = "R. Car and M. Parrinello",
879 journal = "Phys. Rev. Lett.",
882 pages = "2471--2474",
886 doi = "10.1103/PhysRevLett.55.2471",
887 publisher = "American Physical Society",
888 notes = "car parrinello method, dft and md",
892 title = "Short-range order, bulk moduli, and physical trends in
893 c-$Si1-x$$Cx$ alloys",
894 author = "P. C. Kelires",
895 journal = "Phys. Rev. B",
898 pages = "8784--8787",
902 doi = "10.1103/PhysRevB.55.8784",
903 publisher = "American Physical Society",
904 notes = "c strained si, montecarlo md, bulk moduli, next
909 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
910 Application to the $Si1-x-yGexCy$ System",
911 author = "P. C. Kelires",
912 journal = "Phys. Rev. Lett.",
915 pages = "1114--1117",
919 doi = "10.1103/PhysRevLett.75.1114",
920 publisher = "American Physical Society",
921 notes = "mc md, strain compensation in si ge by c insertion",
925 title = "Low temperature electron irradiation of silicon
927 journal = "Solid State Communications",
934 doi = "DOI: 10.1016/0038-1098(70)90074-8",
935 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
936 author = "A. R. Bean and R. C. Newman",
940 author = "F. Durand and J. Duby",
941 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
942 title = "Carbon solubility in solid and liquid silicon—{A}
943 review with reference to eutectic equilibrium",
944 journal = "Journal of Phase Equilibria",
945 publisher = "Springer New York",
947 keyword = "Chemistry and Materials Science",
951 URL = "http://dx.doi.org/10.1361/105497199770335956",
952 note = "10.1361/105497199770335956",
954 notes = "better c solubility limit in silicon",
958 title = "{EPR} Observation of the Isolated Interstitial Carbon
960 author = "G. D. Watkins and K. L. Brower",
961 journal = "Phys. Rev. Lett.",
964 pages = "1329--1332",
968 doi = "10.1103/PhysRevLett.36.1329",
969 publisher = "American Physical Society",
970 notes = "epr observations of 100 interstitial carbon atom in
975 title = "{EPR} identification of the single-acceptor state of
976 interstitial carbon in silicon",
977 author = "L. W. Song and G. D. Watkins",
978 journal = "Phys. Rev. B",
981 pages = "5759--5764",
985 doi = "10.1103/PhysRevB.42.5759",
986 publisher = "American Physical Society",
987 notes = "carbon diffusion in silicon",
991 author = "A K Tipping and R C Newman",
992 title = "The diffusion coefficient of interstitial carbon in
994 journal = "Semicond. Sci. Technol.",
998 URL = "http://stacks.iop.org/0268-1242/2/315",
1000 notes = "diffusion coefficient of carbon interstitials in
1005 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1008 title = "Annealing behavior of Me{V} implanted carbon in
1012 journal = "Journal of Applied Physics",
1015 pages = "3815--3820",
1016 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1017 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1019 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1020 doi = "10.1063/1.354474",
1021 notes = "c at interstitial location for rt implantation in si",
1025 title = "Carbon incorporation into Si at high concentrations by
1026 ion implantation and solid phase epitaxy",
1027 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1028 Picraux and J. K. Watanabe and J. W. Mayer",
1029 journal = "J. Appl. Phys.",
1034 doi = "10.1063/1.360806",
1035 notes = "strained silicon, carbon supersaturation",
1038 @Article{laveant2002,
1039 title = "Epitaxy of carbon-rich silicon with {MBE}",
1040 journal = "Mater. Sci. Eng., B",
1046 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1047 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1048 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1050 notes = "low c in si, tensile stress to compensate compressive
1051 stress, avoid sic precipitation",
1055 title = "The formation of swirl defects in silicon by
1056 agglomeration of self-interstitials",
1057 journal = "Journal of Crystal Growth",
1064 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1065 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1066 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1067 notes = "b-swirl: si + c interstitial agglomerates, c-si
1072 title = "Microdefects in silicon and their relation to point
1074 journal = "Journal of Crystal Growth",
1081 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1082 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1083 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1084 notes = "swirl review",
1088 author = "P. Werner and S. Eichler and G. Mariani and R.
1089 K{\"{o}}gler and W. Skorupa",
1090 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1091 silicon by transmission electron microscopy",
1094 journal = "Appl. Phys. Lett.",
1098 keywords = "silicon; ion implantation; carbon; crystal defects;
1099 transmission electron microscopy; annealing; positron
1100 annihilation; secondary ion mass spectroscopy; buried
1101 layers; precipitation",
1102 URL = "http://link.aip.org/link/?APL/70/252/1",
1103 doi = "10.1063/1.118381",
1104 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1108 @InProceedings{werner96,
1109 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1111 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1112 International Conference on",
1113 title = "{TEM} investigation of {C}-Si defects in carbon
1120 doi = "10.1109/IIT.1996.586497",
1122 notes = "c-si agglomerates dumbbells",
1126 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1129 title = "Carbon diffusion in silicon",
1132 journal = "Appl. Phys. Lett.",
1135 pages = "2465--2467",
1136 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1137 secondary ion mass spectra; semiconductor epitaxial
1138 layers; annealing; impurity-defect interactions;
1139 impurity distribution",
1140 URL = "http://link.aip.org/link/?APL/73/2465/1",
1141 doi = "10.1063/1.122483",
1142 notes = "c diffusion in si, kick out mechnism",
1146 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1148 title = "Self-interstitial enhanced carbon diffusion in
1152 journal = "Applied Physics Letters",
1156 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1157 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1158 TEMPERATURE; IMPURITIES",
1159 URL = "http://link.aip.org/link/?APL/45/268/1",
1160 doi = "10.1063/1.95167",
1161 notes = "c diffusion due to si self-interstitials",
1165 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1168 title = "Characterization of SiGe/Si heterostructures formed by
1169 Ge[sup + ] and {C}[sup + ] implantation",
1172 journal = "Applied Physics Letters",
1175 pages = "2345--2347",
1176 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1177 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1178 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1179 EPITAXY; CARBON IONS; GERMANIUM IONS",
1180 URL = "http://link.aip.org/link/?APL/57/2345/1",
1181 doi = "10.1063/1.103888",
1185 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1186 Doyle and S. T. Picraux and J. W. Mayer",
1188 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1191 journal = "Applied Physics Letters",
1194 pages = "2786--2788",
1195 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1196 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1197 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1198 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1199 EPITAXY; AMORPHIZATION",
1200 URL = "http://link.aip.org/link/?APL/63/2786/1",
1201 doi = "10.1063/1.110334",
1205 author = {M. S. Goorsky and S. S. Iyer and K. Eberl and F. Legoues and J. Angilello and F. Cardone},
1207 title = {Thermal stability of Si[sub 1 - x]C[sub x]/Si strained layer superlattices},
1210 journal = {Applied Physics Letters},
1213 pages = {2758-2760},
1214 keywords = {SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS},
1215 url = {http://link.aip.org/link/?APL/60/2758/1},
1216 doi = {10.1063/1.106868}
1220 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1221 Picraux and J. K. Watanabe and J. W. Mayer",
1223 title = "Precipitation and relaxation in strained Si[sub 1 -
1224 y]{C}[sub y]/Si heterostructures",
1227 journal = "J. Appl. Phys.",
1230 pages = "3656--3668",
1231 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
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1234 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1235 precipitation by substitutional carbon, coherent prec,
1236 coherent to incoherent transition strain vs interface
1241 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1244 title = "Investigation of the high temperature behavior of
1245 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1248 journal = "J. Appl. Phys.",
1251 pages = "1934--1937",
1252 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1253 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1254 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1255 TEMPERATURE RANGE 04001000 K",
1256 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1257 doi = "10.1063/1.358826",
1261 title = "Prospects for device implementation of wide band gap
1263 author = "J. H. Edgar",
1264 journal = "J. Mater. Res.",
1269 doi = "10.1557/JMR.1992.0235",
1270 notes = "properties wide band gap semiconductor, sic
1274 @Article{zirkelbach2007,
1275 title = "Monte Carlo simulation study of a selforganisation
1276 process leading to ordered precipitate structures",
1277 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1279 journal = "Nucl. Instr. and Meth. B",
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1291 @Article{zirkelbach2006,
1292 title = "Monte-Carlo simulation study of the self-organization
1293 of nanometric amorphous precipitates in regular arrays
1294 during ion irradiation",
1295 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1297 journal = "Nucl. Instr. and Meth. B",
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1309 @Article{zirkelbach2005,
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1313 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1315 journal = "Comp. Mater. Sci.",
1322 doi = "doi:10.1016/j.commatsci.2004.12.016",
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1327 @Article{zirkelbach09,
1328 title = "Molecular dynamics simulation of defect formation and
1329 precipitation in heavily carbon doped silicon",
1330 journal = "Mater. Sci. Eng., B",
1335 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1336 Silicon Materials Research for Electronic and
1337 Photovoltaic Applications",
1339 doi = "DOI: 10.1016/j.mseb.2008.10.010",
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1343 keywords = "Silicon",
1344 keywords = "Carbon",
1345 keywords = "Silicon carbide",
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1347 keywords = "Defect formation",
1348 keywords = "Molecular dynamics simulations",
1351 @Article{zirkelbach10,
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1353 classical potentials and first-principles methods",
1354 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1355 K. N. Lindner and W. G. Schmidt and E. Rauls",
1356 journal = "Phys. Rev. B",
1363 doi = "10.1103/PhysRevB.82.094110",
1364 publisher = "American Physical Society",
1367 @Article{zirkelbach11a,
1368 title = "First principles study of defects in carbon implanted
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1375 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
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1379 @Article{zirkelbach11b,
1381 journal = "to be published",
1386 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1387 K. N. Lindner and W. G. Schmidt and E. Rauls",
1391 author = "J. K. N. Lindner and A. Frohnwieser and B.
1392 Rauschenbach and B. Stritzker",
1393 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1395 journal = "MRS Online Proceedings Library",
1400 doi = "10.1557/PROC-354-171",
1401 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1402 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1403 notes = "first time ibs at moderate temperatures",
1407 title = "Formation of buried epitaxial silicon carbide layers
1408 in silicon by ion beam synthesis",
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1418 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1419 Götz and A. Frohnwieser and B. Rauschenbach and B.
1421 notes = "dose window",
1424 @Article{calcagno96,
1425 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1427 journal = "Nuclear Instruments and Methods in Physics Research
1428 Section B: Beam Interactions with Materials and Atoms",
1433 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1434 New Trends in Ion Beam Processing of Materials",
1436 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1437 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1438 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1439 Grimaldi and P. Musumeci",
1440 notes = "dose window, graphitic bonds",
1444 title = "Mechanisms of Si{C} Formation in the Ion Beam
1445 Synthesis of 3{C}-Si{C} Layers in Silicon",
1446 journal = "Materials Science Forum",
1451 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1452 URL = "http://www.scientific.net/MSF.264-268.215",
1453 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1454 notes = "intermediate temperature for sharp interface + good
1459 title = "Controlling the density distribution of Si{C}
1460 nanocrystals for the ion beam synthesis of buried Si{C}
1462 journal = "Nucl. Instrum. Methods Phys. Res. B",
1469 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1470 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1471 author = "J. K. N. Lindner and B. Stritzker",
1472 notes = "two-step implantation process",
1475 @Article{lindner99_2,
1476 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1478 journal = "Nucl. Instrum. Methods Phys. Res. B",
1484 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1485 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1486 author = "J. K. N. Lindner and B. Stritzker",
1487 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1491 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1492 Basic physical processes",
1493 journal = "Nucl. Instrum. Methods Phys. Res. B",
1500 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1501 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1502 author = "J{\"{o}}rg K. N. Lindner",
1506 title = "High-dose carbon implantations into silicon:
1507 fundamental studies for new technological tricks",
1508 author = "J. K. N. Lindner",
1509 journal = "Appl. Phys. A",
1513 doi = "10.1007/s00339-002-2062-8",
1514 notes = "ibs, burried sic layers",
1518 title = "On the balance between ion beam induced nanoparticle
1519 formation and displacive precipitate resolution in the
1521 journal = "Mater. Sci. Eng., C",
1526 note = "Current Trends in Nanoscience - from Materials to
1529 doi = "DOI: 10.1016/j.msec.2005.09.099",
1530 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1531 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1533 notes = "c int diffusion barrier",
1537 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1538 application in buffer layer for Ga{N} epitaxial
1540 journal = "Applied Surface Science",
1545 note = "APHYS'03 Special Issue",
1547 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1548 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1549 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1550 and S. Nishio and K. Yasuda and Y. Ishigami",
1551 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1554 @Article{yamamoto04,
1555 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1556 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1557 implantation into Si(1 1 1) substrate",
1558 journal = "Journal of Crystal Growth",
1563 note = "Proceedings of the 11th Biennial (US) Workshop on
1564 Organometallic Vapor Phase Epitaxy (OMVPE)",
1566 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1567 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1568 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1569 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1570 notes = "gan on 3c-sic",
1574 title = "Substrates for gallium nitride epitaxy",
1575 journal = "Materials Science and Engineering: R: Reports",
1582 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1583 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1584 author = "L. Liu and J. H. Edgar",
1585 notes = "gan substrates",
1588 @Article{takeuchi91,
1589 title = "Growth of single crystalline Ga{N} film on Si
1590 substrate using 3{C}-Si{C} as an intermediate layer",
1591 journal = "Journal of Crystal Growth",
1598 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1599 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1600 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1601 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1602 notes = "gan on 3c-sic (first time?)",
1606 author = "B. J. Alder and T. E. Wainwright",
1607 title = "Phase Transition for a Hard Sphere System",
1610 journal = "J. Chem. Phys.",
1613 pages = "1208--1209",
1614 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1615 doi = "10.1063/1.1743957",
1619 author = "B. J. Alder and T. E. Wainwright",
1620 title = "Studies in Molecular Dynamics. {I}. General Method",
1623 journal = "J. Chem. Phys.",
1627 URL = "http://link.aip.org/link/?JCP/31/459/1",
1628 doi = "10.1063/1.1730376",
1632 title = {Empirical chemical pseudopotential theory of molecular and metallic bonding},
1633 author = {Abell, G. C.},
1634 journal = {Phys. Rev. B},
1637 pages = {6184--6196},
1641 doi = {10.1103/PhysRevB.31.6184},
1642 publisher = {American Physical Society}
1645 @Article{tersoff_si1,
1646 title = "New empirical model for the structural properties of
1648 author = "J. Tersoff",
1649 journal = "Phys. Rev. Lett.",
1656 doi = "10.1103/PhysRevLett.56.632",
1657 publisher = "American Physical Society",
1660 @Article{tersoff_si2,
1661 title = "New empirical approach for the structure and energy of
1663 author = "J. Tersoff",
1664 journal = "Phys. Rev. B",
1667 pages = "6991--7000",
1671 doi = "10.1103/PhysRevB.37.6991",
1672 publisher = "American Physical Society",
1675 @Article{tersoff_si3,
1676 title = "Empirical interatomic potential for silicon with
1677 improved elastic properties",
1678 author = "J. Tersoff",
1679 journal = "Phys. Rev. B",
1682 pages = "9902--9905",
1686 doi = "10.1103/PhysRevB.38.9902",
1687 publisher = "American Physical Society",
1691 title = "Empirical Interatomic Potential for Carbon, with
1692 Applications to Amorphous Carbon",
1693 author = "J. Tersoff",
1694 journal = "Phys. Rev. Lett.",
1697 pages = "2879--2882",
1701 doi = "10.1103/PhysRevLett.61.2879",
1702 publisher = "American Physical Society",
1706 title = "Modeling solid-state chemistry: Interatomic potentials
1707 for multicomponent systems",
1708 author = "J. Tersoff",
1709 journal = "Phys. Rev. B",
1712 pages = "5566--5568",
1716 doi = "10.1103/PhysRevB.39.5566",
1717 publisher = "American Physical Society",
1721 title = "Carbon defects and defect reactions in silicon",
1722 author = "J. Tersoff",
1723 journal = "Phys. Rev. Lett.",
1726 pages = "1757--1760",
1730 doi = "10.1103/PhysRevLett.64.1757",
1731 publisher = "American Physical Society",
1735 title = "Point defects and dopant diffusion in silicon",
1736 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1737 journal = "Rev. Mod. Phys.",
1744 doi = "10.1103/RevModPhys.61.289",
1745 publisher = "American Physical Society",
1749 title = "Silicon carbide: synthesis and processing",
1750 journal = "Nucl. Instrum. Methods Phys. Res. B",
1755 note = "Radiation Effects in Insulators",
1757 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1758 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1759 author = "W. Wesch",
1763 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1764 Palmour and J. A. Edmond",
1765 journal = "Proceedings of the IEEE",
1766 title = "Thin film deposition and microelectronic and
1767 optoelectronic device fabrication and characterization
1768 in monocrystalline alpha and beta silicon carbide",
1774 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1775 diode;SiC;dry etching;electrical
1776 contacts;etching;impurity incorporation;optoelectronic
1777 device fabrication;solid-state devices;surface
1778 chemistry;Schottky effect;Schottky gate field effect
1779 transistors;Schottky-barrier
1780 diodes;etching;heterojunction bipolar
1781 transistors;insulated gate field effect
1782 transistors;light emitting diodes;semiconductor
1783 materials;semiconductor thin films;silicon compounds;",
1784 doi = "10.1109/5.90132",
1786 notes = "sic growth methods",
1790 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1791 Lin and B. Sverdlov and M. Burns",
1793 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1794 ZnSe-based semiconductor device technologies",
1797 journal = "J. Appl. Phys.",
1800 pages = "1363--1398",
1801 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1802 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1803 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1805 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1806 doi = "10.1063/1.358463",
1807 notes = "sic intro, properties",
1811 author = "Noch Unbekannt",
1812 title = "How to find references",
1813 journal = "Journal of Applied References",
1820 title = "Atomistic simulation of thermomechanical properties of
1822 author = "Meijie Tang and Sidney Yip",
1823 journal = "Phys. Rev. B",
1826 pages = "15150--15159",
1829 doi = "10.1103/PhysRevB.52.15150",
1830 notes = "modified tersoff, scale cutoff with volume, promising
1831 tersoff reparametrization",
1832 publisher = "American Physical Society",
1836 title = "Silicon carbide as a new {MEMS} technology",
1837 journal = "Sensors and Actuators A: Physical",
1843 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1844 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1845 author = "Pasqualina M. Sarro",
1847 keywords = "Silicon carbide",
1848 keywords = "Micromachining",
1849 keywords = "Mechanical stress",
1853 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1854 semiconductor for high-temperature applications: {A}
1856 journal = "Solid-State Electronics",
1859 pages = "1409--1422",
1862 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1863 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1864 author = "J. B. Casady and R. W. Johnson",
1865 notes = "sic intro",
1868 @Article{giancarli98,
1869 title = "Design requirements for Si{C}/Si{C} composites
1870 structural material in fusion power reactor blankets",
1871 journal = "Fusion Engineering and Design",
1877 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1878 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1879 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1880 Marois and N. B. Morley and J. F. Salavy",
1884 title = "Electrical and optical characterization of Si{C}",
1885 journal = "Physica B: Condensed Matter",
1891 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1892 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1893 author = "G. Pensl and W. J. Choyke",
1897 title = "Investigation of growth processes of ingots of silicon
1898 carbide single crystals",
1899 journal = "J. Cryst. Growth",
1904 notes = "modified lely process",
1906 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1907 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1908 author = "Yu. M. Tairov and V. F. Tsvetkov",
1912 title = "General principles of growing large-size single
1913 crystals of various silicon carbide polytypes",
1914 journal = "Journal of Crystal Growth",
1921 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1922 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1923 author = "Yu.M. Tairov and V. F. Tsvetkov",
1927 title = "Si{C} boule growth by sublimation vapor transport",
1928 journal = "Journal of Crystal Growth",
1935 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1936 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1937 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1938 R. H. Hopkins and W. J. Choyke",
1942 title = "Growth of large Si{C} single crystals",
1943 journal = "Journal of Crystal Growth",
1950 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1951 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1952 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1953 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1958 title = "Control of polytype formation by surface energy
1959 effects during the growth of Si{C} monocrystals by the
1960 sublimation method",
1961 journal = "Journal of Crystal Growth",
1968 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1969 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1970 author = "R. A. Stein and P. Lanig",
1971 notes = "6h and 4h, sublimation technique",
1975 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1978 title = "Production of large-area single-crystal wafers of
1979 cubic Si{C} for semiconductor devices",
1982 journal = "Appl. Phys. Lett.",
1986 keywords = "silicon carbides; layers; chemical vapor deposition;
1988 URL = "http://link.aip.org/link/?APL/42/460/1",
1989 doi = "10.1063/1.93970",
1990 notes = "cvd of 3c-sic on si, sic buffer layer",
1994 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1995 and Hiroyuki Matsunami",
1997 title = "Epitaxial growth and electric characteristics of cubic
2001 journal = "J. Appl. Phys.",
2004 pages = "4889--4893",
2005 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2006 doi = "10.1063/1.338355",
2007 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2012 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2014 title = "Growth and Characterization of Cubic Si{C}
2015 Single-Crystal Films on Si",
2018 journal = "Journal of The Electrochemical Society",
2021 pages = "1558--1565",
2022 keywords = "semiconductor materials; silicon compounds; carbon
2023 compounds; crystal morphology; electron mobility",
2024 URL = "http://link.aip.org/link/?JES/134/1558/1",
2025 doi = "10.1149/1.2100708",
2026 notes = "blue light emitting diodes (led)",
2029 @Article{powell87_2,
2030 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2031 C. M. Chorey and T. T. Cheng and P. Pirouz",
2033 title = "Improved beta-Si{C} heteroepitaxial films using
2034 off-axis Si substrates",
2037 journal = "Applied Physics Letters",
2041 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2042 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2043 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2044 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2045 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2046 URL = "http://link.aip.org/link/?APL/51/823/1",
2047 doi = "10.1063/1.98824",
2048 notes = "improved sic on off-axis si substrates, reduced apbs",
2052 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2053 journal = "Journal of Crystal Growth",
2060 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2061 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2062 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2064 notes = "step-controlled epitaxy model",
2068 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2069 and Hiroyuki Matsunami",
2070 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2074 journal = "J. Appl. Phys.",
2078 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2079 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2081 URL = "http://link.aip.org/link/?JAP/73/726/1",
2082 doi = "10.1063/1.353329",
2083 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2086 @Article{powell90_2,
2087 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2088 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2089 Yoganathan and J. Yang and P. Pirouz",
2091 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2092 vicinal (0001) 6{H}-Si{C} wafers",
2095 journal = "Applied Physics Letters",
2098 pages = "1442--1444",
2099 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2100 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2101 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2102 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2103 URL = "http://link.aip.org/link/?APL/56/1442/1",
2104 doi = "10.1063/1.102492",
2105 notes = "cvd of 6h-sic on 6h-sic",
2109 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2111 title = "Chemical vapor deposition and characterization of
2112 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2116 journal = "Journal of Applied Physics",
2119 pages = "2672--2679",
2120 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2121 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2122 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2123 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2124 PHASE EPITAXY; CRYSTAL ORIENTATION",
2125 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2126 doi = "10.1063/1.341608",
2130 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2131 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2132 Yoganathan and J. Yang and P. Pirouz",
2134 title = "Growth of improved quality 3{C}-Si{C} films on
2135 6{H}-Si{C} substrates",
2138 journal = "Appl. Phys. Lett.",
2141 pages = "1353--1355",
2142 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2143 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2144 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2146 URL = "http://link.aip.org/link/?APL/56/1353/1",
2147 doi = "10.1063/1.102512",
2148 notes = "cvd of 3c-sic on 6h-sic",
2152 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2153 Rozgonyi and K. L. More",
2155 title = "An examination of double positioning boundaries and
2156 interface misfit in beta-Si{C} films on alpha-Si{C}
2160 journal = "Journal of Applied Physics",
2163 pages = "2645--2650",
2164 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2165 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2166 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2167 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2168 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2169 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2170 doi = "10.1063/1.341004",
2174 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2175 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2176 and W. J. Choyke and L. Clemen and M. Yoganathan",
2178 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2179 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2182 journal = "Applied Physics Letters",
2186 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2187 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2188 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2189 URL = "http://link.aip.org/link/?APL/59/333/1",
2190 doi = "10.1063/1.105587",
2194 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2195 Thokala and M. J. Loboda",
2197 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2198 films on 6{H}-Si{C} by chemical vapor deposition from
2202 journal = "J. Appl. Phys.",
2205 pages = "1271--1273",
2206 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2207 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2209 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2210 doi = "10.1063/1.360368",
2211 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2215 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2216 properties of its p-n junction",
2217 journal = "Journal of Crystal Growth",
2224 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2225 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2226 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2228 notes = "first time ssmbe of 3c-sic on 6h-sic",
2232 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2233 [alpha]-Si{C}(0001) at low temperatures by solid-source
2234 molecular beam epitaxy",
2235 journal = "J. Cryst. Growth",
2241 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2242 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2243 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2244 Schr{\"{o}}ter and W. Richter",
2245 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2248 @Article{fissel95_apl,
2249 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2251 title = "Low-temperature growth of Si{C} thin films on Si and
2252 6{H}--Si{C} by solid-source molecular beam epitaxy",
2255 journal = "Appl. Phys. Lett.",
2258 pages = "3182--3184",
2259 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2261 URL = "http://link.aip.org/link/?APL/66/3182/1",
2262 doi = "10.1063/1.113716",
2263 notes = "mbe 3c-sic on si and 6h-sic",
2267 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2268 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2270 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2271 migration enhanced epitaxy controlled to an atomic
2272 level using surface superstructures",
2275 journal = "Applied Physics Letters",
2278 pages = "1204--1206",
2279 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2280 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2282 URL = "http://link.aip.org/link/?APL/68/1204/1",
2283 doi = "10.1063/1.115969",
2284 notes = "ss mbe sic, superstructure, reconstruction",
2288 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2289 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2290 C. M. Bertoni and A. Catellani",
2291 journal = "Phys. Rev. Lett.",
2298 doi = "10.1103/PhysRevLett.91.136101",
2299 publisher = "American Physical Society",
2300 notes = "dft calculations mbe sic growth",
2304 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2306 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2310 journal = "Appl. Phys. Lett.",
2314 URL = "http://link.aip.org/link/?APL/18/509/1",
2315 doi = "10.1063/1.1653516",
2316 notes = "first time sic by ibs, follow cites for precipitation
2321 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2322 and E. V. Lubopytova",
2323 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2324 by ion implantation",
2325 publisher = "Taylor \& Francis",
2327 journal = "Radiation Effects",
2331 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2332 notes = "3c-sic for different temperatures, amorphous, poly,
2333 single crystalline",
2336 @Article{akimchenko80,
2337 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2338 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2339 title = "Structure and optical properties of silicon implanted
2340 by high doses of 70 and 310 ke{V} carbon ions",
2341 publisher = "Taylor \& Francis",
2343 journal = "Radiation Effects",
2347 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2348 notes = "3c-sic nucleation by thermal spikes",
2352 title = "Structure and annealing properties of silicon carbide
2353 thin layers formed by implantation of carbon ions in
2355 journal = "Thin Solid Films",
2362 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2363 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2364 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2369 title = "Characteristics of the synthesis of [beta]-Si{C} by
2370 the implantation of carbon ions into silicon",
2371 journal = "Thin Solid Films",
2378 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2379 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2380 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2385 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2386 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2387 Chater and J. A. Iulner and J. Davis",
2388 title = "Formation mechanisms and structures of insulating
2389 compounds formed in silicon by ion beam synthesis",
2390 publisher = "Taylor \& Francis",
2392 journal = "Radiation Effects",
2396 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2397 notes = "ibs, comparison with sio and sin, higher temp or
2398 time, no c redistribution",
2402 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2403 J. Davis and G. E. Celler",
2405 title = "Formation of buried layers of beta-Si{C} using ion
2406 beam synthesis and incoherent lamp annealing",
2409 journal = "Appl. Phys. Lett.",
2412 pages = "2242--2244",
2413 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2414 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2415 URL = "http://link.aip.org/link/?APL/51/2242/1",
2416 doi = "10.1063/1.98953",
2417 notes = "nice tem images, sic by ibs",
2421 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2422 and M. Olivier and A. M. Papon and G. Rolland",
2424 title = "High-temperature ion beam synthesis of cubic Si{C}",
2427 journal = "Journal of Applied Physics",
2430 pages = "2908--2912",
2431 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2432 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2433 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2434 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2435 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2436 REACTIONS; MONOCRYSTALS",
2437 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2438 doi = "10.1063/1.346092",
2439 notes = "triple energy implantation to overcome high annealing
2444 author = "R. I. Scace and G. A. Slack",
2446 title = "Solubility of Carbon in Silicon and Germanium",
2449 journal = "J. Chem. Phys.",
2452 pages = "1551--1555",
2453 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2454 doi = "10.1063/1.1730236",
2455 notes = "solubility of c in c-si, si-c phase diagram",
2459 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2461 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2462 Laboratories Eindhoven Netherlands Eindhoven
2464 title = "Boron implantations in silicon: {A} comparison of
2465 charge carrier and boron concentration profiles",
2466 journal = "Applied Physics A: Materials Science \& Processing",
2467 publisher = "Springer Berlin / Heidelberg",
2469 keyword = "Physics and Astronomy",
2473 URL = "http://dx.doi.org/10.1007/BF00884267",
2474 note = "10.1007/BF00884267",
2476 notes = "first time ted (only for boron?)",
2480 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2483 title = "Rapid annealing and the anomalous diffusion of ion
2484 implanted boron into silicon",
2487 journal = "Applied Physics Letters",
2491 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2492 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2493 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2494 URL = "http://link.aip.org/link/?APL/50/416/1",
2495 doi = "10.1063/1.98160",
2496 notes = "ted of boron in si",
2500 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2503 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2504 time, and matrix dependence of atomic and electrical
2508 journal = "Journal of Applied Physics",
2511 pages = "6191--6198",
2512 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2513 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2514 CRYSTALS; AMORPHIZATION",
2515 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2516 doi = "10.1063/1.346910",
2517 notes = "ted of boron in si",
2521 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2522 F. W. Saris and W. Vandervorst",
2524 title = "Role of {C} and {B} clusters in transient diffusion of
2528 journal = "Appl. Phys. Lett.",
2531 pages = "1150--1152",
2532 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2533 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2535 URL = "http://link.aip.org/link/?APL/68/1150/1",
2536 doi = "10.1063/1.115706",
2537 notes = "suppression of transient enhanced diffusion (ted)",
2541 title = "Implantation and transient boron diffusion: the role
2542 of the silicon self-interstitial",
2543 journal = "Nucl. Instrum. Methods Phys. Res. B",
2548 note = "Selected Papers of the Tenth International Conference
2549 on Ion Implantation Technology (IIT '94)",
2551 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2552 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2553 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2558 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2559 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2560 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2563 title = "Physical mechanisms of transient enhanced dopant
2564 diffusion in ion-implanted silicon",
2567 journal = "J. Appl. Phys.",
2570 pages = "6031--6050",
2571 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2572 doi = "10.1063/1.364452",
2573 notes = "ted, transient enhanced diffusion, c silicon trap",
2577 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2579 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2580 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2583 journal = "Appl. Phys. Lett.",
2587 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2588 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2589 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2591 URL = "http://link.aip.org/link/?APL/64/324/1",
2592 doi = "10.1063/1.111195",
2593 notes = "beta sic nano crystals in si, mbe, annealing",
2597 author = "Richard A. Soref",
2599 title = "Optical band gap of the ternary semiconductor Si[sub 1
2600 - x - y]Ge[sub x]{C}[sub y]",
2603 journal = "J. Appl. Phys.",
2606 pages = "2470--2472",
2607 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2608 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2610 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2611 doi = "10.1063/1.349403",
2612 notes = "band gap of strained si by c",
2616 author = "E Kasper",
2617 title = "Superlattices of group {IV} elements, a new
2618 possibility to produce direct band gap material",
2619 journal = "Physica Scripta",
2622 URL = "http://stacks.iop.org/1402-4896/T35/232",
2624 notes = "superlattices, convert indirect band gap into a
2629 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2632 title = "Growth and strain compensation effects in the ternary
2633 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2636 journal = "Applied Physics Letters",
2639 pages = "3033--3035",
2640 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2641 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2642 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2643 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2645 URL = "http://link.aip.org/link/?APL/60/3033/1",
2646 doi = "10.1063/1.106774",
2650 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2653 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2657 journal = "J. Vac. Sci. Technol. B",
2660 pages = "1064--1068",
2661 location = "Ottawa (Canada)",
2662 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2663 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2664 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2665 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2666 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2667 doi = "10.1116/1.587008",
2668 notes = "substitutional c in si by mbe",
2671 @Article{powell93_2,
2672 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2673 of the ternary system",
2674 journal = "Journal of Crystal Growth",
2681 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2682 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2683 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2688 author = "H. J. Osten",
2689 title = "Modification of Growth Modes in Lattice-Mismatched
2690 Epitaxial Systems: Si/Ge",
2691 journal = "physica status solidi (a)",
2694 publisher = "WILEY-VCH Verlag",
2696 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2697 doi = "10.1002/pssa.2211450203",
2702 @Article{dietrich94,
2703 title = "Lattice distortion in a strain-compensated
2704 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2705 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2706 Methfessel and P. Zaumseil",
2707 journal = "Phys. Rev. B",
2710 pages = "17185--17190",
2714 doi = "10.1103/PhysRevB.49.17185",
2715 publisher = "American Physical Society",
2719 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2721 title = "Growth of an inverse tetragonal distorted SiGe layer
2722 on Si(001) by adding small amounts of carbon",
2725 journal = "Applied Physics Letters",
2728 pages = "3440--3442",
2729 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2730 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2731 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2733 URL = "http://link.aip.org/link/?APL/64/3440/1",
2734 doi = "10.1063/1.111235",
2735 notes = "inversely strained / distorted heterostructure",
2739 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2740 LeGoues and J. C. Tsang and F. Cardone",
2742 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2743 molecular beam epitaxy",
2746 journal = "Applied Physics Letters",
2750 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2751 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2752 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2753 FILM GROWTH; MICROSTRUCTURE",
2754 URL = "http://link.aip.org/link/?APL/60/356/1",
2755 doi = "10.1063/1.106655",
2759 author = "H. J. Osten and J. Griesche and S. Scalese",
2761 title = "Substitutional carbon incorporation in epitaxial
2762 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2763 molecular beam epitaxy",
2766 journal = "Appl. Phys. Lett.",
2770 keywords = "molecular beam epitaxial growth; semiconductor growth;
2771 wide band gap semiconductors; interstitials; silicon
2773 URL = "http://link.aip.org/link/?APL/74/836/1",
2774 doi = "10.1063/1.123384",
2775 notes = "substitutional c in si by mbe",
2778 @Article{hohenberg64,
2779 title = "Inhomogeneous Electron Gas",
2780 author = "P. Hohenberg and W. Kohn",
2781 journal = "Phys. Rev.",
2784 pages = "B864--B871",
2788 doi = "10.1103/PhysRev.136.B864",
2789 publisher = "American Physical Society",
2790 notes = "density functional theory, dft",
2794 title = "Self-Consistent Equations Including Exchange and
2795 Correlation Effects",
2796 author = "W. Kohn and L. J. Sham",
2797 journal = "Phys. Rev.",
2800 pages = "A1133--A1138",
2804 doi = "10.1103/PhysRev.140.A1133",
2805 publisher = "American Physical Society",
2806 notes = "dft, exchange and correlation",
2810 title = "Strain-stabilized highly concentrated pseudomorphic
2811 $Si1-x$$Cx$ layers in Si",
2812 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2814 journal = "Phys. Rev. Lett.",
2817 pages = "3578--3581",
2821 doi = "10.1103/PhysRevLett.72.3578",
2822 publisher = "American Physical Society",
2823 notes = "high c concentration in si, heterostructure, strained
2828 title = "Phosphorous Doping of Strain-Induced
2829 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2830 by Low-Temperature Chemical Vapor Deposition",
2831 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2832 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2833 journal = "Japanese Journal of Applied Physics",
2835 number = "Part 1, No. 4B",
2836 pages = "2472--2475",
2839 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2840 doi = "10.1143/JJAP.41.2472",
2841 publisher = "The Japan Society of Applied Physics",
2842 notes = "experimental charge carrier mobility in strained si",
2846 title = "Electron Transport Model for Strained Silicon-Carbon
2848 author = "Shu-Tong Chang and Chung-Yi Lin",
2849 journal = "Japanese J. Appl. Phys.",
2852 pages = "2257--2262",
2855 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2856 doi = "10.1143/JJAP.44.2257",
2857 publisher = "The Japan Society of Applied Physics",
2858 notes = "enhance of electron mobility in strained si",
2861 @Article{kissinger94,
2862 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2865 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2866 y] layers on Si(001)",
2869 journal = "Applied Physics Letters",
2872 pages = "3356--3358",
2873 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2874 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2875 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2876 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2877 URL = "http://link.aip.org/link/?APL/65/3356/1",
2878 doi = "10.1063/1.112390",
2879 notes = "strained si influence on optical properties",
2883 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2886 title = "Substitutional versus interstitial carbon
2887 incorporation during pseudomorphic growth of Si[sub 1 -
2888 y]{C}[sub y] on Si(001)",
2891 journal = "Journal of Applied Physics",
2894 pages = "6711--6715",
2895 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2896 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2898 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2899 doi = "10.1063/1.363797",
2900 notes = "mbe substitutional vs interstitial c incorporation",
2904 author = "H. J. Osten and P. Gaworzewski",
2906 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2907 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2911 journal = "J. Appl. Phys.",
2914 pages = "4977--4981",
2915 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2916 semiconductors; semiconductor epitaxial layers; carrier
2917 density; Hall mobility; interstitials; defect states",
2918 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2919 doi = "10.1063/1.366364",
2920 notes = "charge transport in strained si",
2924 title = "Carbon-mediated aggregation of self-interstitials in
2925 silicon: {A} large-scale molecular dynamics study",
2926 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2927 journal = "Phys. Rev. B",
2934 doi = "10.1103/PhysRevB.69.155214",
2935 publisher = "American Physical Society",
2936 notes = "simulation using promising tersoff reparametrization",
2940 title = "Event-Based Relaxation of Continuous Disordered
2942 author = "G. T. Barkema and Normand Mousseau",
2943 journal = "Phys. Rev. Lett.",
2946 pages = "4358--4361",
2950 doi = "10.1103/PhysRevLett.77.4358",
2951 publisher = "American Physical Society",
2952 notes = "activation relaxation technique, art, speed up slow
2957 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2958 Minoukadeh and F. Willaime",
2960 title = "Some improvements of the activation-relaxation
2961 technique method for finding transition pathways on
2962 potential energy surfaces",
2965 journal = "J. Chem. Phys.",
2971 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2972 surfaces; vacancies (crystal)",
2973 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2974 doi = "10.1063/1.3088532",
2975 notes = "improvements to art, refs for methods to find
2976 transition pathways",
2979 @Article{parrinello81,
2980 author = "M. Parrinello and A. Rahman",
2982 title = "Polymorphic transitions in single crystals: {A} new
2983 molecular dynamics method",
2986 journal = "J. Appl. Phys.",
2989 pages = "7182--7190",
2990 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2991 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2992 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2993 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2994 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2996 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2997 doi = "10.1063/1.328693",
3000 @Article{stillinger85,
3001 title = "Computer simulation of local order in condensed phases
3003 author = "Frank H. Stillinger and Thomas A. Weber",
3004 journal = "Phys. Rev. B",
3007 pages = "5262--5271",
3011 doi = "10.1103/PhysRevB.31.5262",
3012 publisher = "American Physical Society",
3016 title = "Empirical potential for hydrocarbons for use in
3017 simulating the chemical vapor deposition of diamond
3019 author = "Donald W. Brenner",
3020 journal = "Phys. Rev. B",
3023 pages = "9458--9471",
3027 doi = "10.1103/PhysRevB.42.9458",
3028 publisher = "American Physical Society",
3029 notes = "brenner hydro carbons",
3033 title = "Modeling of Covalent Bonding in Solids by Inversion of
3034 Cohesive Energy Curves",
3035 author = "Martin Z. Bazant and Efthimios Kaxiras",
3036 journal = "Phys. Rev. Lett.",
3039 pages = "4370--4373",
3043 doi = "10.1103/PhysRevLett.77.4370",
3044 publisher = "American Physical Society",
3045 notes = "first si edip",
3049 title = "Environment-dependent interatomic potential for bulk
3051 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3053 journal = "Phys. Rev. B",
3056 pages = "8542--8552",
3060 doi = "10.1103/PhysRevB.56.8542",
3061 publisher = "American Physical Society",
3062 notes = "second si edip",
3066 title = "Interatomic potential for silicon defects and
3068 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3069 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3070 journal = "Phys. Rev. B",
3073 pages = "2539--2550",
3077 doi = "10.1103/PhysRevB.58.2539",
3078 publisher = "American Physical Society",
3079 notes = "latest si edip, good dislocation explanation",
3083 title = "{PARCAS} molecular dynamics code",
3084 author = "K. Nordlund",
3089 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3091 author = "Arthur F. Voter",
3092 journal = "Phys. Rev. Lett.",
3095 pages = "3908--3911",
3099 doi = "10.1103/PhysRevLett.78.3908",
3100 publisher = "American Physical Society",
3101 notes = "hyperdynamics, accelerated md",
3105 author = "Arthur F. Voter",
3107 title = "A method for accelerating the molecular dynamics
3108 simulation of infrequent events",
3111 journal = "J. Chem. Phys.",
3114 pages = "4665--4677",
3115 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3116 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3117 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3118 energy functions; surface diffusion; reaction kinetics
3119 theory; potential energy surfaces",
3120 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3121 doi = "10.1063/1.473503",
3122 notes = "improved hyperdynamics md",
3125 @Article{sorensen2000,
3126 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3128 title = "Temperature-accelerated dynamics for simulation of
3132 journal = "J. Chem. Phys.",
3135 pages = "9599--9606",
3136 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3137 MOLECULAR DYNAMICS METHOD; surface diffusion",
3138 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3139 doi = "10.1063/1.481576",
3140 notes = "temperature accelerated dynamics, tad",
3144 title = "Parallel replica method for dynamics of infrequent
3146 author = "Arthur F. Voter",
3147 journal = "Phys. Rev. B",
3150 pages = "R13985--R13988",
3154 doi = "10.1103/PhysRevB.57.R13985",
3155 publisher = "American Physical Society",
3156 notes = "parallel replica method, accelerated md",
3160 author = "Xiongwu Wu and Shaomeng Wang",
3162 title = "Enhancing systematic motion in molecular dynamics
3166 journal = "J. Chem. Phys.",
3169 pages = "9401--9410",
3170 keywords = "molecular dynamics method; argon; Lennard-Jones
3171 potential; crystallisation; liquid theory",
3172 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3173 doi = "10.1063/1.478948",
3174 notes = "self guided md, sgmd, accelerated md, enhancing
3178 @Article{choudhary05,
3179 author = "Devashish Choudhary and Paulette Clancy",
3181 title = "Application of accelerated molecular dynamics schemes
3182 to the production of amorphous silicon",
3185 journal = "J. Chem. Phys.",
3191 keywords = "molecular dynamics method; silicon; glass structure;
3192 amorphous semiconductors",
3193 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3194 doi = "10.1063/1.1878733",
3195 notes = "explanation of sgmd and hyper md, applied to amorphous
3200 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3202 title = "Carbon precipitation in silicon: Why is it so
3206 journal = "Appl. Phys. Lett.",
3209 pages = "3336--3338",
3210 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3211 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3213 URL = "http://link.aip.org/link/?APL/62/3336/1",
3214 doi = "10.1063/1.109063",
3215 notes = "interfacial energy of cubic sic and si, si self
3216 interstitials necessary for precipitation, volume
3217 decrease, high interface energy",
3220 @Article{chaussende08,
3221 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3222 journal = "J. Cryst. Growth",
3227 note = "Proceedings of the E-MRS Conference, Symposium G -
3228 Substrates of Wide Bandgap Materials",
3230 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3231 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3232 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3233 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3234 and A. Andreadou and E. K. Polychroniadis and C.
3235 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3236 notes = "3c-sic crystal growth, sic fabrication + links,
3240 @Article{chaussende07,
3241 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3242 title = "Status of Si{C} bulk growth processes",
3243 journal = "Journal of Physics D: Applied Physics",
3247 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3249 notes = "review of sic single crystal growth methods, process
3254 title = "Forces in Molecules",
3255 author = "R. P. Feynman",
3256 journal = "Phys. Rev.",
3263 doi = "10.1103/PhysRev.56.340",
3264 publisher = "American Physical Society",
3265 notes = "hellmann feynman forces",
3269 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3270 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3271 their Contrasting Properties",
3272 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3274 journal = "Phys. Rev. Lett.",
3281 doi = "10.1103/PhysRevLett.84.943",
3282 publisher = "American Physical Society",
3283 notes = "si sio2 and sic sio2 interface",
3286 @Article{djurabekova08,
3287 title = "Atomistic simulation of the interface structure of Si
3288 nanocrystals embedded in amorphous silica",
3289 author = "Flyura Djurabekova and Kai Nordlund",
3290 journal = "Phys. Rev. B",
3297 doi = "10.1103/PhysRevB.77.115325",
3298 publisher = "American Physical Society",
3299 notes = "nc-si in sio2, interface energy, nc construction,
3300 angular distribution, coordination",
3304 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3305 W. Liang and J. Zou",
3307 title = "Nature of interfacial defects and their roles in
3308 strain relaxation at highly lattice mismatched
3309 3{C}-Si{C}/Si (001) interface",
3312 journal = "J. Appl. Phys.",
3318 keywords = "anelastic relaxation; crystal structure; dislocations;
3319 elemental semiconductors; semiconductor growth;
3320 semiconductor thin films; silicon; silicon compounds;
3321 stacking faults; wide band gap semiconductors",
3322 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3323 doi = "10.1063/1.3234380",
3324 notes = "sic/si interface, follow refs, tem image
3325 deconvolution, dislocation defects",
3328 @Article{kitabatake93,
3329 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3332 title = "Simulations and experiments of Si{C} heteroepitaxial
3333 growth on Si(001) surface",
3336 journal = "J. Appl. Phys.",
3339 pages = "4438--4445",
3340 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3341 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3342 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3343 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3344 doi = "10.1063/1.354385",
3345 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3349 @Article{kitabatake97,
3350 author = "Makoto Kitabatake",
3351 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3352 Heteroepitaxial Growth",
3353 publisher = "WILEY-VCH Verlag",
3355 journal = "physica status solidi (b)",
3358 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3359 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3360 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3364 title = "Strain relaxation and thermal stability of the
3365 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3367 journal = "Thin Solid Films",
3374 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3375 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3376 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3377 keywords = "Strain relaxation",
3378 keywords = "Interfaces",
3379 keywords = "Thermal stability",
3380 keywords = "Molecular dynamics",
3381 notes = "tersoff sic/si interface study",
3385 title = "Ab initio Study of Misfit Dislocations at the
3386 $Si{C}/Si(001)$ Interface",
3387 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3389 journal = "Phys. Rev. Lett.",
3396 doi = "10.1103/PhysRevLett.89.156101",
3397 publisher = "American Physical Society",
3398 notes = "sic/si interface study",
3401 @Article{pizzagalli03,
3402 title = "Theoretical investigations of a highly mismatched
3403 interface: Si{C}/Si(001)",
3404 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3406 journal = "Phys. Rev. B",
3413 doi = "10.1103/PhysRevB.68.195302",
3414 publisher = "American Physical Society",
3415 notes = "tersoff md and ab initio sic/si interface study",
3419 title = "Atomic configurations of dislocation core and twin
3420 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3421 electron microscopy",
3422 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3423 H. Zheng and J. W. Liang",
3424 journal = "Phys. Rev. B",
3431 doi = "10.1103/PhysRevB.75.184103",
3432 publisher = "American Physical Society",
3433 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3437 @Article{hornstra58,
3438 title = "Dislocations in the diamond lattice",
3439 journal = "Journal of Physics and Chemistry of Solids",
3446 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3447 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3448 author = "J. Hornstra",
3449 notes = "dislocations in diamond lattice",
3453 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3454 Ion `Hot' Implantation",
3455 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3456 Hirao and Naoki Arai and Tomio Izumi",
3457 journal = "Japanese J. Appl. Phys.",
3459 number = "Part 1, No. 2A",
3463 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3464 doi = "10.1143/JJAP.31.343",
3465 publisher = "The Japan Society of Applied Physics",
3466 notes = "c-c bonds in c implanted si, hot implantation
3467 efficiency, c-c hard to break by thermal annealing",
3470 @Article{eichhorn99,
3471 author = "F. Eichhorn and N. Schell and W. Matz and R.
3474 title = "Strain and Si{C} particle formation in silicon
3475 implanted with carbon ions of medium fluence studied by
3476 synchrotron x-ray diffraction",
3479 journal = "J. Appl. Phys.",
3482 pages = "4184--4187",
3483 keywords = "silicon; carbon; elemental semiconductors; chemical
3484 interdiffusion; ion implantation; X-ray diffraction;
3485 precipitation; semiconductor doping",
3486 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3487 doi = "10.1063/1.371344",
3488 notes = "sic conversion by ibs, detected substitutional carbon,
3489 expansion of si lattice",
3492 @Article{eichhorn02,
3493 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3494 Metzger and W. Matz and R. K{\"{o}}gler",
3496 title = "Structural relation between Si and Si{C} formed by
3497 carbon ion implantation",
3500 journal = "J. Appl. Phys.",
3503 pages = "1287--1292",
3504 keywords = "silicon compounds; wide band gap semiconductors; ion
3505 implantation; annealing; X-ray scattering; transmission
3506 electron microscopy",
3507 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3508 doi = "10.1063/1.1428105",
3509 notes = "3c-sic alignement to si host in ibs depending on
3510 temperature, might explain c into c sub trafo",
3514 author = "G Lucas and M Bertolus and L Pizzagalli",
3515 title = "An environment-dependent interatomic potential for
3516 silicon carbide: calculation of bulk properties,
3517 high-pressure phases, point and extended defects, and
3518 amorphous structures",
3519 journal = "J. Phys.: Condens. Matter",
3523 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3529 author = "J Godet and L Pizzagalli and S Brochard and P
3531 title = "Comparison between classical potentials and ab initio
3532 methods for silicon under large shear",
3533 journal = "J. Phys.: Condens. Matter",
3537 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3539 notes = "comparison of empirical potentials, stillinger weber,
3540 edip, tersoff, ab initio",
3543 @Article{moriguchi98,
3544 title = "Verification of Tersoff's Potential for Static
3545 Structural Analysis of Solids of Group-{IV} Elements",
3546 author = "Koji Moriguchi and Akira Shintani",
3547 journal = "Japanese J. Appl. Phys.",
3549 number = "Part 1, No. 2",
3553 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3554 doi = "10.1143/JJAP.37.414",
3555 publisher = "The Japan Society of Applied Physics",
3556 notes = "tersoff stringent test",
3559 @Article{mazzarolo01,
3560 title = "Low-energy recoils in crystalline silicon: Quantum
3562 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3563 Lulli and Eros Albertazzi",
3564 journal = "Phys. Rev. B",
3571 doi = "10.1103/PhysRevB.63.195207",
3572 publisher = "American Physical Society",
3575 @Article{holmstroem08,
3576 title = "Threshold defect production in silicon determined by
3577 density functional theory molecular dynamics
3579 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3580 journal = "Phys. Rev. B",
3587 doi = "10.1103/PhysRevB.78.045202",
3588 publisher = "American Physical Society",
3589 notes = "threshold displacement comparison empirical and ab
3593 @Article{nordlund97,
3594 title = "Repulsive interatomic potentials calculated using
3595 Hartree-Fock and density-functional theory methods",
3596 journal = "Nucl. Instrum. Methods Phys. Res. B",
3603 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3604 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3605 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3606 notes = "repulsive ab initio potential",
3610 title = "Efficiency of ab-initio total energy calculations for
3611 metals and semiconductors using a plane-wave basis
3613 journal = "Comput. Mater. Sci.",
3620 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3621 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3622 author = "G. Kresse and J. Furthm{\"{u}}ller",
3627 title = "Projector augmented-wave method",
3628 author = "P. E. Bl{\"o}chl",
3629 journal = "Phys. Rev. B",
3632 pages = "17953--17979",
3636 doi = "10.1103/PhysRevB.50.17953",
3637 publisher = "American Physical Society",
3638 notes = "paw method",
3642 title = "Norm-Conserving Pseudopotentials",
3643 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3644 journal = "Phys. Rev. Lett.",
3647 pages = "1494--1497",
3651 doi = "10.1103/PhysRevLett.43.1494",
3652 publisher = "American Physical Society",
3653 notes = "norm-conserving pseudopotentials",
3656 @Article{vanderbilt90,
3657 title = "Soft self-consistent pseudopotentials in a generalized
3658 eigenvalue formalism",
3659 author = "David Vanderbilt",
3660 journal = "Phys. Rev. B",
3663 pages = "7892--7895",
3667 doi = "10.1103/PhysRevB.41.7892",
3668 publisher = "American Physical Society",
3669 notes = "vasp pseudopotentials",
3673 title = "Accurate and simple density functional for the
3674 electronic exchange energy: Generalized gradient
3676 author = "John P. Perdew and Yue Wang",
3677 journal = "Phys. Rev. B",
3680 pages = "8800--8802",
3684 doi = "10.1103/PhysRevB.33.8800",
3685 publisher = "American Physical Society",
3686 notes = "rapid communication gga",
3690 title = "Generalized gradient approximations for exchange and
3691 correlation: {A} look backward and forward",
3692 journal = "Physica B: Condensed Matter",
3699 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3700 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3701 author = "John P. Perdew",
3702 notes = "gga overview",
3706 title = "Atoms, molecules, solids, and surfaces: Applications
3707 of the generalized gradient approximation for exchange
3709 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3710 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3711 and Carlos Fiolhais",
3712 journal = "Phys. Rev. B",
3715 pages = "6671--6687",
3719 doi = "10.1103/PhysRevB.46.6671",
3720 publisher = "American Physical Society",
3721 notes = "gga pw91 (as in vasp)",
3724 @Article{baldereschi73,
3725 title = "Mean-Value Point in the Brillouin Zone",
3726 author = "A. Baldereschi",
3727 journal = "Phys. Rev. B",
3730 pages = "5212--5215",
3734 doi = "10.1103/PhysRevB.7.5212",
3735 publisher = "American Physical Society",
3736 notes = "mean value k point",
3740 title = "Ab initio pseudopotential calculations of dopant
3742 journal = "Comput. Mater. Sci.",
3749 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3750 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3751 author = "Jing Zhu",
3752 keywords = "TED (transient enhanced diffusion)",
3753 keywords = "Boron dopant",
3754 keywords = "Carbon dopant",
3755 keywords = "Defect",
3756 keywords = "ab initio pseudopotential method",
3757 keywords = "Impurity cluster",
3758 notes = "binding of c to si interstitial, c in si defects",
3762 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3764 title = "Si{C} buried layer formation by ion beam synthesis at
3768 journal = "Appl. Phys. Lett.",
3771 pages = "2646--2648",
3772 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3773 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3774 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3775 ELECTRON MICROSCOPY",
3776 URL = "http://link.aip.org/link/?APL/66/2646/1",
3777 doi = "10.1063/1.113112",
3778 notes = "precipitation mechanism by substitutional carbon, si
3779 self interstitials react with further implanted c",
3783 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3784 Kolodzey and A. Hairie",
3786 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3790 journal = "J. Appl. Phys.",
3793 pages = "4631--4633",
3794 keywords = "silicon compounds; precipitation; localised modes;
3795 semiconductor epitaxial layers; infrared spectra;
3796 Fourier transform spectra; thermal stability;
3798 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3799 doi = "10.1063/1.368703",
3800 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3804 author = "R Jones and B J Coomer and P R Briddon",
3805 title = "Quantum mechanical modelling of defects in
3807 journal = "J. Phys.: Condens. Matter",
3811 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3813 notes = "ab inito dft intro, vibrational modes, c defect in
3818 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3819 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3820 J. E. Greene and S. G. Bishop",
3822 title = "Carbon incorporation pathways and lattice sites in
3823 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3824 molecular-beam epitaxy",
3827 journal = "J. Appl. Phys.",
3830 pages = "5716--5727",
3831 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3832 doi = "10.1063/1.1465122",
3833 notes = "c substitutional incorporation pathway, dft and expt",
3837 title = "Dynamic properties of interstitial carbon and
3838 carbon-carbon pair defects in silicon",
3839 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3841 journal = "Phys. Rev. B",
3844 pages = "2188--2194",
3848 doi = "10.1103/PhysRevB.55.2188",
3849 publisher = "American Physical Society",
3850 notes = "ab initio c in si and di-carbon defect, no formation
3851 energies, different migration barriers and paths",
3855 title = "Interstitial carbon and the carbon-carbon pair in
3856 silicon: Semiempirical electronic-structure
3858 author = "Matthew J. Burnard and Gary G. DeLeo",
3859 journal = "Phys. Rev. B",
3862 pages = "10217--10225",
3866 doi = "10.1103/PhysRevB.47.10217",
3867 publisher = "American Physical Society",
3868 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3869 carbon defect, formation energies",
3873 title = "Electronic structure of interstitial carbon in
3875 author = "Morgan Besson and Gary G. DeLeo",
3876 journal = "Phys. Rev. B",
3879 pages = "4028--4033",
3883 doi = "10.1103/PhysRevB.43.4028",
3884 publisher = "American Physical Society",
3888 title = "Review of atomistic simulations of surface diffusion
3889 and growth on semiconductors",
3890 journal = "Comput. Mater. Sci.",
3895 note = "Proceedings of the Workshop on Virtual Molecular Beam
3898 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3899 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3900 author = "Efthimios Kaxiras",
3901 notes = "might contain c 100 db formation energy, overview md,
3902 tight binding, first principles",
3905 @Article{kaukonen98,
3906 title = "Effect of {N} and {B} doping on the growth of {CVD}
3908 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3910 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3911 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3913 journal = "Phys. Rev. B",
3916 pages = "9965--9970",
3920 doi = "10.1103/PhysRevB.57.9965",
3921 publisher = "American Physical Society",
3922 notes = "constrained conjugate gradient relaxation technique
3927 title = "Correlation between the antisite pair and the ${DI}$
3929 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3930 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3932 journal = "Phys. Rev. B",
3939 doi = "10.1103/PhysRevB.67.155203",
3940 publisher = "American Physical Society",
3944 title = "Production and recovery of defects in Si{C} after
3945 irradiation and deformation",
3946 journal = "J. Nucl. Mater.",
3949 pages = "1803--1808",
3953 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3954 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3955 author = "J. Chen and P. Jung and H. Klein",
3959 title = "Accumulation, dynamic annealing and thermal recovery
3960 of ion-beam-induced disorder in silicon carbide",
3961 journal = "Nucl. Instrum. Methods Phys. Res. B",
3968 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3969 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3970 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3973 @Article{bockstedte03,
3974 title = "Ab initio study of the migration of intrinsic defects
3976 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3978 journal = "Phys. Rev. B",
3985 doi = "10.1103/PhysRevB.68.205201",
3986 publisher = "American Physical Society",
3987 notes = "defect migration in sic",
3991 title = "Theoretical study of vacancy diffusion and
3992 vacancy-assisted clustering of antisites in Si{C}",
3993 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3995 journal = "Phys. Rev. B",
4002 doi = "10.1103/PhysRevB.68.155208",
4003 publisher = "American Physical Society",
4007 journal = "Telegrafiya i Telefoniya bez Provodov",
4011 author = "O. V. Lossev",
4015 title = "Luminous carborundum detector and detection effect and
4016 oscillations with crystals",
4017 journal = "Philosophical Magazine Series 7",
4020 pages = "1024--1044",
4022 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4023 author = "O. V. Lossev",
4027 journal = "Physik. Zeitschr.",
4031 author = "O. V. Lossev",
4035 journal = "Physik. Zeitschr.",
4039 author = "O. V. Lossev",
4043 journal = "Physik. Zeitschr.",
4047 author = "O. V. Lossev",
4051 title = "A note on carborundum",
4052 journal = "Electrical World",
4056 author = "H. J. Round",
4059 @Article{vashishath08,
4060 title = "Recent trends in silicon carbide device research",
4061 journal = "Mj. Int. J. Sci. Tech.",
4066 author = "Munish Vashishath and Ashoke K. Chatterjee",
4067 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4068 notes = "sic polytype electronic properties",
4072 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4074 title = "Growth and Properties of beta-Si{C} Single Crystals",
4077 journal = "Journal of Applied Physics",
4081 URL = "http://link.aip.org/link/?JAP/37/333/1",
4082 doi = "10.1063/1.1707837",
4083 notes = "sic melt growth",
4087 author = "A. E. van Arkel and J. H. de Boer",
4088 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4090 publisher = "WILEY-VCH Verlag GmbH",
4092 journal = "Z. Anorg. Chem.",
4095 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4096 doi = "10.1002/zaac.19251480133",
4097 notes = "van arkel apparatus",
4101 author = "K. Moers",
4103 journal = "Z. Anorg. Chem.",
4106 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4111 author = "J. T. Kendall",
4112 title = "Electronic Conduction in Silicon Carbide",
4115 journal = "The Journal of Chemical Physics",
4119 URL = "http://link.aip.org/link/?JCP/21/821/1",
4120 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4125 author = "J. A. Lely",
4127 journal = "Ber. Deut. Keram. Ges.",
4130 notes = "lely sublimation growth process",
4133 @Article{knippenberg63,
4134 author = "W. F. Knippenberg",
4136 journal = "Philips Res. Repts.",
4139 notes = "acheson process",
4142 @Article{hoffmann82,
4143 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4146 title = "Silicon carbide blue light emitting diodes with
4147 improved external quantum efficiency",
4150 journal = "Journal of Applied Physics",
4153 pages = "6962--6967",
4154 keywords = "light emitting diodes; silicon carbides; quantum
4155 efficiency; visible radiation; experimental data;
4156 epitaxy; fabrication; medium temperature; layers;
4157 aluminium; nitrogen; substrates; pn junctions;
4158 electroluminescence; spectra; current density;
4160 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4161 doi = "10.1063/1.330041",
4162 notes = "blue led, sublimation process",
4166 author = "Philip Neudeck",
4167 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4168 Road 44135 Cleveland OH",
4169 title = "Progress in silicon carbide semiconductor electronics
4171 journal = "Journal of Electronic Materials",
4172 publisher = "Springer Boston",
4174 keyword = "Chemistry and Materials Science",
4178 URL = "http://dx.doi.org/10.1007/BF02659688",
4179 note = "10.1007/BF02659688",
4181 notes = "sic data, advantages of 3c sic",
4184 @Article{bhatnagar93,
4185 author = "M. Bhatnagar and B. J. Baliga",
4186 journal = "Electron Devices, IEEE Transactions on",
4187 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4194 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4195 rectifiers;Si;SiC;breakdown voltages;drift region
4196 properties;output characteristics;power MOSFETs;power
4197 semiconductor devices;switching characteristics;thermal
4198 analysis;Schottky-barrier diodes;electric breakdown of
4199 solids;insulated gate field effect transistors;power
4200 transistors;semiconductor materials;silicon;silicon
4201 compounds;solid-state rectifiers;thermal analysis;",
4202 doi = "10.1109/16.199372",
4204 notes = "comparison 3c 6h sic and si devices",
4208 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4209 A. Powell and C. S. Salupo and L. G. Matus",
4210 journal = "Electron Devices, IEEE Transactions on",
4211 title = "Electrical properties of epitaxial 3{C}- and
4212 6{H}-Si{C} p-n junction diodes produced side-by-side on
4213 6{H}-Si{C} substrates",
4219 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4220 C;6H-SiC layers;6H-SiC substrates;CVD
4221 process;SiC;chemical vapor deposition;doping;electrical
4222 properties;epitaxial layers;light
4223 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4224 diodes;polytype;rectification characteristics;reverse
4225 leakage current;reverse voltages;temperature;leakage
4226 currents;power electronics;semiconductor
4227 diodes;semiconductor epitaxial layers;semiconductor
4228 growth;semiconductor materials;silicon
4229 compounds;solid-state rectifiers;substrates;vapour
4230 phase epitaxial growth;",
4231 doi = "10.1109/16.285038",
4233 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4238 author = "N. Schulze and D. L. Barrett and G. Pensl",
4240 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4241 single crystals by physical vapor transport",
4244 journal = "Applied Physics Letters",
4247 pages = "1632--1634",
4248 keywords = "silicon compounds; semiconductor materials;
4249 semiconductor growth; crystal growth from vapour;
4250 photoluminescence; Hall mobility",
4251 URL = "http://link.aip.org/link/?APL/72/1632/1",
4252 doi = "10.1063/1.121136",
4253 notes = "micropipe free 6h-sic pvt growth",
4257 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4259 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4262 journal = "Applied Physics Letters",
4266 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4267 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4268 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4269 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4271 URL = "http://link.aip.org/link/?APL/50/221/1",
4272 doi = "10.1063/1.97667",
4273 notes = "apb 3c-sic heteroepitaxy on si",
4276 @Article{shibahara86,
4277 title = "Surface morphology of cubic Si{C}(100) grown on
4278 Si(100) by chemical vapor deposition",
4279 journal = "Journal of Crystal Growth",
4286 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4287 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4288 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4290 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4293 @Article{desjardins96,
4294 author = "P. Desjardins and J. E. Greene",
4296 title = "Step-flow epitaxial growth on two-domain surfaces",
4299 journal = "Journal of Applied Physics",
4302 pages = "1423--1434",
4303 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4304 FILM GROWTH; SURFACE STRUCTURE",
4305 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4306 doi = "10.1063/1.360980",
4307 notes = "apb model",
4311 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4313 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4314 carbonization of silicon",
4317 journal = "Journal of Applied Physics",
4320 pages = "2070--2073",
4321 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4322 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4324 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4325 doi = "10.1063/1.360184",
4326 notes = "ssmbe of sic on si, lower temperatures",
4330 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4331 {MBE} using surface superstructure",
4332 journal = "Journal of Crystal Growth",
4339 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4340 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4341 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4342 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4343 notes = "gas source mbe of 3c-sic on 6h-sic",
4346 @Article{yoshinobu92,
4347 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4348 and Takashi Fuyuki and Hiroyuki Matsunami",
4350 title = "Lattice-matched epitaxial growth of single crystalline
4351 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4352 molecular beam epitaxy",
4355 journal = "Applied Physics Letters",
4359 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4360 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4361 INTERFACE STRUCTURE",
4362 URL = "http://link.aip.org/link/?APL/60/824/1",
4363 doi = "10.1063/1.107430",
4364 notes = "gas source mbe of 3c-sic on 6h-sic",
4367 @Article{yoshinobu90,
4368 title = "Atomic level control in gas source {MBE} growth of
4370 journal = "Journal of Crystal Growth",
4377 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4378 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4379 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4380 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4381 notes = "gas source mbe of 3c-sic on 3c-sic",
4385 title = "Atomic layer epitaxy controlled by surface
4386 superstructures in Si{C}",
4387 journal = "Thin Solid Films",
4394 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4395 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4396 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4398 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4403 title = "Microscopic mechanisms of accurate layer-by-layer
4404 growth of [beta]-Si{C}",
4405 journal = "Thin Solid Films",
4412 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4413 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4414 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4415 and S. Misawa and E. Sakuma and S. Yoshida",
4416 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4421 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4423 title = "Effects of gas flow ratio on silicon carbide thin film
4424 growth mode and polytype formation during gas-source
4425 molecular beam epitaxy",
4428 journal = "Applied Physics Letters",
4431 pages = "2851--2853",
4432 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4433 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4434 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4436 URL = "http://link.aip.org/link/?APL/65/2851/1",
4437 doi = "10.1063/1.112513",
4438 notes = "gas source mbe of 6h-sic on 6h-sic",
4442 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4443 title = "Heterointerface Control and Epitaxial Growth of
4444 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4445 publisher = "WILEY-VCH Verlag",
4447 journal = "physica status solidi (b)",
4450 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4455 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4456 journal = "Journal of Crystal Growth",
4463 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4464 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4465 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4466 keywords = "Reflection high-energy electron diffraction (RHEED)",
4467 keywords = "Scanning electron microscopy (SEM)",
4468 keywords = "Silicon carbide",
4469 keywords = "Silicon",
4470 keywords = "Island growth",
4471 notes = "lower temperature, 550-700",
4474 @Article{hatayama95,
4475 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4476 on Si using hydrocarbon radicals by gas source
4477 molecular beam epitaxy",
4478 journal = "Journal of Crystal Growth",
4485 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4486 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4487 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4488 and Hiroyuki Matsunami",
4492 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4493 title = "The Preference of Silicon Carbide for Growth in the
4494 Metastable Cubic Form",
4495 journal = "Journal of the American Ceramic Society",
4498 publisher = "Blackwell Publishing Ltd",
4500 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4501 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4502 pages = "2630--2633",
4503 keywords = "silicon carbide, crystal growth, crystal structure,
4504 calculations, stability",
4506 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4507 polytype dft calculation refs",
4510 @Article{allendorf91,
4511 title = "The adsorption of {H}-atoms on polycrystalline
4512 [beta]-silicon carbide",
4513 journal = "Surface Science",
4520 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4521 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4522 author = "Mark D. Allendorf and Duane A. Outka",
4523 notes = "h adsorption on 3c-sic",
4526 @Article{eaglesham93,
4527 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4528 D. P. Adams and S. M. Yalisove",
4530 title = "Effect of {H} on Si molecular-beam epitaxy",
4533 journal = "Journal of Applied Physics",
4536 pages = "6615--6618",
4537 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4538 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4539 DIFFUSION; ADSORPTION",
4540 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4541 doi = "10.1063/1.355101",
4542 notes = "h incorporation on si surface, lower surface
4547 author = "Ronald C. Newman",
4548 title = "Carbon in Crystalline Silicon",
4549 journal = "MRS Online Proceedings Library",
4554 doi = "10.1557/PROC-59-403",
4555 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4556 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4560 title = "The diffusivity of carbon in silicon",
4561 journal = "Journal of Physics and Chemistry of Solids",
4568 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4569 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4570 author = "R. C. Newman and J. Wakefield",
4571 notes = "diffusivity of substitutional c in si",
4575 author = "U. Gösele",
4576 title = "The Role of Carbon and Point Defects in Silicon",
4577 journal = "MRS Online Proceedings Library",
4582 doi = "10.1557/PROC-59-419",
4583 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4584 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4587 @Article{mukashev82,
4588 title = "Defects in Carbon-Implanted Silicon",
4589 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4590 Fukuoka and Haruo Saito",
4591 journal = "Japanese Journal of Applied Physics",
4593 number = "Part 1, No. 2",
4597 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4598 doi = "10.1143/JJAP.21.399",
4599 publisher = "The Japan Society of Applied Physics",
4603 title = "Convergence of supercell calculations for point
4604 defects in semiconductors: Vacancy in silicon",
4605 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4607 journal = "Phys. Rev. B",
4610 pages = "1318--1325",
4614 doi = "10.1103/PhysRevB.58.1318",
4615 publisher = "American Physical Society",
4616 notes = "convergence k point supercell size, vacancy in
4621 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4622 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4623 K{\"{o}}gler and W. Skorupa",
4625 title = "Spectroscopic characterization of phases formed by
4626 high-dose carbon ion implantation in silicon",
4629 journal = "Journal of Applied Physics",
4632 pages = "2978--2984",
4633 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4634 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4635 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4636 DEPENDENCE; PRECIPITATES; ANNEALING",
4637 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4638 doi = "10.1063/1.358714",
4641 @Article{romano-rodriguez96,
4642 title = "Detailed analysis of [beta]-Si{C} formation by high
4643 dose carbon ion implantation in silicon",
4644 journal = "Materials Science and Engineering B",
4649 note = "European Materials Research Society 1995 Spring
4650 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4651 Oxygen in Silicon and in Other Elemental
4654 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4655 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4656 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4657 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4659 keywords = "Silicon",
4660 keywords = "Ion implantation",
4661 notes = "incoherent 3c-sic precipitate",