2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 author = "Henri Moissan",
187 title = "Nouvelles recherches sur la météorité de Cañon
189 journal = "Comptes rendus de l'Académie des Sciences",
196 author = "Y. S. Park",
197 title = "Si{C} Materials and Devices",
198 publisher = "Academic Press",
199 address = "San Diego",
204 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
205 Calvin H. Carter Jr. and D. Asbury",
206 title = "Si{C} Seeded Boule Growth",
207 journal = "Materials Science Forum",
211 notes = "modified lely process, micropipes",
215 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
216 Thermodynamical Properties of Lennard-Jones Molecules",
217 author = "Loup Verlet",
218 journal = "Phys. Rev.",
224 doi = "10.1103/PhysRev.159.98",
225 publisher = "American Physical Society",
226 notes = "velocity verlet integration algorithm equation of
230 @Article{berendsen84,
231 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
232 Gunsteren and A. DiNola and J. R. Haak",
234 title = "Molecular dynamics with coupling to an external bath",
237 journal = "J. Chem. Phys.",
240 pages = "3684--3690",
241 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
242 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
243 URL = "http://link.aip.org/link/?JCP/81/3684/1",
244 doi = "10.1063/1.448118",
245 notes = "berendsen thermostat barostat",
249 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
251 title = "Molecular dynamics determination of defect energetics
252 in beta -Si{C} using three representative empirical
254 journal = "Modell. Simul. Mater. Sci. Eng.",
258 URL = "http://stacks.iop.org/0965-0393/3/615",
259 notes = "comparison of tersoff, pearson and eam for defect
260 energetics in sic; (m)eam parameters for sic",
265 title = "Relationship between the embedded-atom method and
267 author = "Donald W. Brenner",
268 journal = "Phys. Rev. Lett.",
275 doi = "10.1103/PhysRevLett.63.1022",
276 publisher = "American Physical Society",
277 notes = "relation of tersoff and eam potential",
281 title = "Molecular-dynamics study of self-interstitials in
283 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
284 journal = "Phys. Rev. B",
287 pages = "9552--9558",
291 doi = "10.1103/PhysRevB.35.9552",
292 publisher = "American Physical Society",
293 notes = "selft-interstitials in silicon, stillinger-weber,
294 calculation of defect formation energy, defect
299 title = "Extended interstitials in silicon and germanium",
300 author = "H. R. Schober",
301 journal = "Phys. Rev. B",
304 pages = "13013--13015",
308 doi = "10.1103/PhysRevB.39.13013",
309 publisher = "American Physical Society",
310 notes = "stillinger-weber silicon 110 stable and metastable
311 dumbbell configuration",
315 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
316 Defect accumulation, topological features, and
318 author = "F. Gao and W. J. Weber",
319 journal = "Phys. Rev. B",
326 doi = "10.1103/PhysRevB.66.024106",
327 publisher = "American Physical Society",
328 notes = "sic intro, si cascade in 3c-sic, amorphization,
329 tersoff modified, pair correlation of amorphous sic, md
333 @Article{devanathan98,
334 title = "Computer simulation of a 10 ke{V} Si displacement
336 journal = "Nucl. Instrum. Methods Phys. Res. B",
342 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
343 author = "R. Devanathan and W. J. Weber and T. Diaz de la
345 notes = "modified tersoff short range potential, ab initio
349 @Article{devanathan98_2,
350 title = "Displacement threshold energies in [beta]-Si{C}",
351 journal = "J. Nucl. Mater.",
357 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
358 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
360 notes = "modified tersoff, ab initio, combined ab initio
364 @Article{kitabatake00,
365 title = "Si{C}/Si heteroepitaxial growth",
366 author = "M. Kitabatake",
367 journal = "Thin Solid Films",
372 notes = "md simulation, sic si heteroepitaxy, mbe",
376 title = "Intrinsic point defects in crystalline silicon:
377 Tight-binding molecular dynamics studies of
378 self-diffusion, interstitial-vacancy recombination, and
380 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
382 journal = "Phys. Rev. B",
385 pages = "14279--14289",
389 doi = "10.1103/PhysRevB.55.14279",
390 publisher = "American Physical Society",
391 notes = "si self interstitial, diffusion, tbmd",
395 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
398 title = "A kinetic Monte--Carlo study of the effective
399 diffusivity of the silicon self-interstitial in the
400 presence of carbon and boron",
403 journal = "J. Appl. Phys.",
406 pages = "1963--1967",
407 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
408 CARBON ADDITIONS; BORON ADDITIONS; elemental
409 semiconductors; self-diffusion",
410 URL = "http://link.aip.org/link/?JAP/84/1963/1",
411 doi = "10.1063/1.368328",
412 notes = "kinetic monte carlo of si self interstitial
417 title = "Barrier to Migration of the Silicon
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. Lett.",
423 pages = "1129--1132",
427 doi = "10.1103/PhysRevLett.52.1129",
428 publisher = "American Physical Society",
429 notes = "si self-interstitial migration barrier",
432 @Article{bar-yam84_2,
433 title = "Electronic structure and total-energy migration
434 barriers of silicon self-interstitials",
435 author = "Y. Bar-Yam and J. D. Joannopoulos",
436 journal = "Phys. Rev. B",
439 pages = "1844--1852",
443 doi = "10.1103/PhysRevB.30.1844",
444 publisher = "American Physical Society",
448 title = "First-principles calculations of self-diffusion
449 constants in silicon",
450 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
451 and D. B. Laks and W. Andreoni and S. T. Pantelides",
452 journal = "Phys. Rev. Lett.",
455 pages = "2435--2438",
459 doi = "10.1103/PhysRevLett.70.2435",
460 publisher = "American Physical Society",
461 notes = "si self int diffusion by ab initio md, formation
462 entropy calculations",
466 title = "Tight-binding theory of native point defects in
468 author = "L. Colombo",
469 journal = "Annu. Rev. Mater. Res.",
474 doi = "10.1146/annurev.matsci.32.111601.103036",
475 publisher = "Annual Reviews",
476 notes = "si self interstitial, tbmd, virial stress",
479 @Article{al-mushadani03,
480 title = "Free-energy calculations of intrinsic point defects in
482 author = "O. K. Al-Mushadani and R. J. Needs",
483 journal = "Phys. Rev. B",
490 doi = "10.1103/PhysRevB.68.235205",
491 publisher = "American Physical Society",
492 notes = "formation energies of intrinisc point defects in
493 silicon, si self interstitials, free energy",
496 @Article{goedecker02,
497 title = "A Fourfold Coordinated Point Defect in Silicon",
498 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
499 journal = "Phys. Rev. Lett.",
506 doi = "10.1103/PhysRevLett.88.235501",
507 publisher = "American Physical Society",
508 notes = "first time ffcd, fourfold coordinated point defect in
513 title = "Ab initio molecular dynamics simulation of
514 self-interstitial diffusion in silicon",
515 author = "Beat Sahli and Wolfgang Fichtner",
516 journal = "Phys. Rev. B",
523 doi = "10.1103/PhysRevB.72.245210",
524 publisher = "American Physical Society",
525 notes = "si self int, diffusion, barrier height, voronoi
530 title = "Ab initio calculations of the interaction between
531 native point defects in silicon",
532 journal = "Mater. Sci. Eng., B",
537 note = "EMRS 2005, Symposium D - Materials Science and Device
538 Issues for Future Technologies",
540 doi = "DOI: 10.1016/j.mseb.2005.08.072",
541 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
542 author = "G. Hobler and G. Kresse",
543 notes = "vasp intrinsic si defect interaction study, capture
548 title = "Ab initio study of self-diffusion in silicon over a
549 wide temperature range: Point defect states and
550 migration mechanisms",
551 author = "Shangyi Ma and Shaoqing Wang",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.81.193203",
560 publisher = "American Physical Society",
561 notes = "si self interstitial diffusion + refs",
565 title = "Atomistic simulations on the thermal stability of the
566 antisite pair in 3{C}- and 4{H}-Si{C}",
567 author = "M. Posselt and F. Gao and W. J. Weber",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.73.125206",
576 publisher = "American Physical Society",
580 title = "Correlation between self-diffusion in Si and the
581 migration mechanisms of vacancies and
582 self-interstitials: An atomistic study",
583 author = "M. Posselt and F. Gao and H. Bracht",
584 journal = "Phys. Rev. B",
591 doi = "10.1103/PhysRevB.78.035208",
592 publisher = "American Physical Society",
593 notes = "si self-interstitial and vacancy diffusion, stillinger
598 title = "Ab initio and empirical-potential studies of defect
599 properties in $3{C}-Si{C}$",
600 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
602 journal = "Phys. Rev. B",
609 doi = "10.1103/PhysRevB.64.245208",
610 publisher = "American Physical Society",
611 notes = "defects in 3c-sic",
615 title = "Empirical potential approach for defect properties in
617 journal = "Nucl. Instrum. Methods Phys. Res. B",
624 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
625 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
626 author = "Fei Gao and William J. Weber",
627 keywords = "Empirical potential",
628 keywords = "Defect properties",
629 keywords = "Silicon carbide",
630 keywords = "Computer simulation",
631 notes = "sic potential, brenner type, like erhart/albe",
635 title = "Atomistic study of intrinsic defect migration in
637 author = "Fei Gao and William J. Weber and M. Posselt and V.
639 journal = "Phys. Rev. B",
646 doi = "10.1103/PhysRevB.69.245205",
647 publisher = "American Physical Society",
648 notes = "defect migration in sic",
652 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
655 title = "Ab Initio atomic simulations of antisite pair recovery
656 in cubic silicon carbide",
659 journal = "Appl. Phys. Lett.",
665 keywords = "ab initio calculations; silicon compounds; antisite
666 defects; wide band gap semiconductors; molecular
667 dynamics method; density functional theory;
668 electron-hole recombination; photoluminescence;
669 impurities; diffusion",
670 URL = "http://link.aip.org/link/?APL/90/221915/1",
671 doi = "10.1063/1.2743751",
674 @Article{mattoni2002,
675 title = "Self-interstitial trapping by carbon complexes in
676 crystalline silicon",
677 author = "A. Mattoni and F. Bernardini and L. Colombo",
678 journal = "Phys. Rev. B",
685 doi = "10.1103/PhysRevB.66.195214",
686 publisher = "American Physical Society",
687 notes = "c in c-si, diffusion, interstitial configuration +
688 links, interaction of carbon and silicon interstitials,
689 tersoff suitability",
693 title = "Calculations of Silicon Self-Interstitial Defects",
694 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
696 journal = "Phys. Rev. Lett.",
699 pages = "2351--2354",
703 doi = "10.1103/PhysRevLett.83.2351",
704 publisher = "American Physical Society",
705 notes = "nice images of the defects, si defect overview +
710 title = "Identification of the migration path of interstitial
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "7439--7442",
720 doi = "10.1103/PhysRevB.50.7439",
721 publisher = "American Physical Society",
722 notes = "carbon interstitial migration path shown, 001 c-si
727 title = "Theory of carbon-carbon pairs in silicon",
728 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
729 journal = "Phys. Rev. B",
732 pages = "9845--9850",
736 doi = "10.1103/PhysRevB.58.9845",
737 publisher = "American Physical Society",
738 notes = "c_i c_s pair configuration, theoretical results",
742 title = "Bistable interstitial-carbon--substitutional-carbon
744 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
746 journal = "Phys. Rev. B",
749 pages = "5765--5783",
753 doi = "10.1103/PhysRevB.42.5765",
754 publisher = "American Physical Society",
755 notes = "c_i c_s pair configuration, experimental results",
759 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
760 Shifeng Lu and Xiang-Yang Liu",
762 title = "Ab initio modeling and experimental study of {C}--{B}
766 journal = "Appl. Phys. Lett.",
770 keywords = "silicon; boron; carbon; elemental semiconductors;
771 impurity-defect interactions; ab initio calculations;
772 secondary ion mass spectra; diffusion; interstitials",
773 URL = "http://link.aip.org/link/?APL/80/52/1",
774 doi = "10.1063/1.1430505",
775 notes = "c-c 100 split, lower as a and b states of capaz",
779 title = "Ab initio investigation of carbon-related defects in
781 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
783 journal = "Phys. Rev. B",
786 pages = "12554--12557",
790 doi = "10.1103/PhysRevB.47.12554",
791 publisher = "American Physical Society",
792 notes = "c interstitials in crystalline silicon",
796 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
798 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
799 Sokrates T. Pantelides",
800 journal = "Phys. Rev. Lett.",
803 pages = "1814--1817",
807 doi = "10.1103/PhysRevLett.52.1814",
808 publisher = "American Physical Society",
809 notes = "microscopic theory diffusion silicon dft migration
814 title = "Unified Approach for Molecular Dynamics and
815 Density-Functional Theory",
816 author = "R. Car and M. Parrinello",
817 journal = "Phys. Rev. Lett.",
820 pages = "2471--2474",
824 doi = "10.1103/PhysRevLett.55.2471",
825 publisher = "American Physical Society",
826 notes = "car parrinello method, dft and md",
830 title = "Short-range order, bulk moduli, and physical trends in
831 c-$Si1-x$$Cx$ alloys",
832 author = "P. C. Kelires",
833 journal = "Phys. Rev. B",
836 pages = "8784--8787",
840 doi = "10.1103/PhysRevB.55.8784",
841 publisher = "American Physical Society",
842 notes = "c strained si, montecarlo md, bulk moduli, next
847 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
848 Application to the $Si1-x-yGexCy$ System",
849 author = "P. C. Kelires",
850 journal = "Phys. Rev. Lett.",
853 pages = "1114--1117",
857 doi = "10.1103/PhysRevLett.75.1114",
858 publisher = "American Physical Society",
859 notes = "mc md, strain compensation in si ge by c insertion",
863 title = "Low temperature electron irradiation of silicon
865 journal = "Solid State Communications",
872 doi = "DOI: 10.1016/0038-1098(70)90074-8",
873 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
874 author = "A. R. Bean and R. C. Newman",
878 title = "{EPR} Observation of the Isolated Interstitial Carbon
880 author = "G. D. Watkins and K. L. Brower",
881 journal = "Phys. Rev. Lett.",
884 pages = "1329--1332",
888 doi = "10.1103/PhysRevLett.36.1329",
889 publisher = "American Physical Society",
890 notes = "epr observations of 100 interstitial carbon atom in
895 title = "{EPR} identification of the single-acceptor state of
896 interstitial carbon in silicon",
897 author = "L. W. Song and G. D. Watkins",
898 journal = "Phys. Rev. B",
901 pages = "5759--5764",
905 doi = "10.1103/PhysRevB.42.5759",
906 publisher = "American Physical Society",
907 notes = "carbon diffusion in silicon",
911 author = "A K Tipping and R C Newman",
912 title = "The diffusion coefficient of interstitial carbon in
914 journal = "Semicond. Sci. Technol.",
918 URL = "http://stacks.iop.org/0268-1242/2/315",
920 notes = "diffusion coefficient of carbon interstitials in
925 title = "Carbon incorporation into Si at high concentrations by
926 ion implantation and solid phase epitaxy",
927 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
928 Picraux and J. K. Watanabe and J. W. Mayer",
929 journal = "J. Appl. Phys.",
934 doi = "10.1063/1.360806",
935 notes = "strained silicon, carbon supersaturation",
938 @Article{laveant2002,
939 title = "Epitaxy of carbon-rich silicon with {MBE}",
940 journal = "Mater. Sci. Eng., B",
946 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
947 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
948 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
950 notes = "low c in si, tensile stress to compensate compressive
951 stress, avoid sic precipitation",
955 author = "P. Werner and S. Eichler and G. Mariani and R.
956 K{\"{o}}gler and W. Skorupa",
957 title = "Investigation of {C}[sub x]Si defects in {C} implanted
958 silicon by transmission electron microscopy",
961 journal = "Appl. Phys. Lett.",
965 keywords = "silicon; ion implantation; carbon; crystal defects;
966 transmission electron microscopy; annealing; positron
967 annihilation; secondary ion mass spectroscopy; buried
968 layers; precipitation",
969 URL = "http://link.aip.org/link/?APL/70/252/1",
970 doi = "10.1063/1.118381",
971 notes = "si-c complexes, agglomerate, sic in si matrix, sic
975 @InProceedings{werner96,
976 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
978 booktitle = "Ion Implantation Technology. Proceedings of the 11th
979 International Conference on",
980 title = "{TEM} investigation of {C}-Si defects in carbon
987 doi = "10.1109/IIT.1996.586497",
989 notes = "c-si agglomerates dumbbells",
993 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
996 title = "Carbon diffusion in silicon",
999 journal = "Appl. Phys. Lett.",
1002 pages = "2465--2467",
1003 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1004 secondary ion mass spectra; semiconductor epitaxial
1005 layers; annealing; impurity-defect interactions;
1006 impurity distribution",
1007 URL = "http://link.aip.org/link/?APL/73/2465/1",
1008 doi = "10.1063/1.122483",
1009 notes = "c diffusion in si, kick out mechnism",
1013 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1014 Picraux and J. K. Watanabe and J. W. Mayer",
1016 title = "Precipitation and relaxation in strained Si[sub 1 -
1017 y]{C}[sub y]/Si heterostructures",
1020 journal = "J. Appl. Phys.",
1023 pages = "3656--3668",
1024 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1025 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1026 doi = "10.1063/1.357429",
1027 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1028 precipitation by substitutional carbon, coherent prec,
1029 coherent to incoherent transition strain vs interface
1034 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1037 title = "Investigation of the high temperature behavior of
1038 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1041 journal = "J. Appl. Phys.",
1044 pages = "1934--1937",
1045 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1046 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1047 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1048 TEMPERATURE RANGE 04001000 K",
1049 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1050 doi = "10.1063/1.358826",
1054 title = "Prospects for device implementation of wide band gap
1056 author = "J. H. Edgar",
1057 journal = "J. Mater. Res.",
1062 doi = "10.1557/JMR.1992.0235",
1063 notes = "properties wide band gap semiconductor, sic
1067 @Article{zirkelbach2007,
1068 title = "Monte Carlo simulation study of a selforganisation
1069 process leading to ordered precipitate structures",
1070 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1072 journal = "Nucl. Instr. and Meth. B",
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1085 title = "Monte-Carlo simulation study of the self-organization
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1128 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1129 Silicon Materials Research for Electronic and
1130 Photovoltaic Applications",
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1148 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1233 author = "J. K. N. Lindner",
1234 journal = "Appl. Phys. A",
1238 doi = "10.1007/s00339-002-2062-8",
1239 notes = "ibs, burried sic layers",
1243 title = "On the balance between ion beam induced nanoparticle
1244 formation and displacive precipitate resolution in the
1246 journal = "Mater. Sci. Eng., C",
1251 note = "Current Trends in Nanoscience - from Materials to
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1262 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1263 application in buffer layer for Ga{N} epitaxial
1265 journal = "Applied Surface Science",
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1274 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1275 and S. Nishio and K. Yasuda and Y. Ishigami",
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1279 @Article{yamamoto04,
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1281 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1282 implantation into Si(1 1 1) substrate",
1283 journal = "Journal of Crystal Growth",
1288 note = "Proceedings of the 11th Biennial (US) Workshop on
1289 Organometallic Vapor Phase Epitaxy (OMVPE)",
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1299 title = "Substrates for gallium nitride epitaxy",
1300 journal = "Materials Science and Engineering: R: Reports",
1307 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
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1313 @Article{takeuchi91,
1314 title = "Growth of single crystalline Ga{N} film on Si
1315 substrate using 3{C}-Si{C} as an intermediate layer",
1316 journal = "Journal of Crystal Growth",
1323 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1325 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
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1327 notes = "gan on 3c-sic (first time?)",
1331 author = "B. J. Alder and T. E. Wainwright",
1332 title = "Phase Transition for a Hard Sphere System",
1335 journal = "J. Chem. Phys.",
1338 pages = "1208--1209",
1339 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1340 doi = "10.1063/1.1743957",
1344 author = "B. J. Alder and T. E. Wainwright",
1345 title = "Studies in Molecular Dynamics. {I}. General Method",
1348 journal = "J. Chem. Phys.",
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1359 author = "J. Tersoff",
1360 journal = "Phys. Rev. Lett.",
1367 doi = "10.1103/PhysRevLett.56.632",
1368 publisher = "American Physical Society",
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1382 doi = "10.1103/PhysRevB.37.6991",
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1386 @Article{tersoff_si3,
1387 title = "Empirical interatomic potential for silicon with
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1393 pages = "9902--9905",
1397 doi = "10.1103/PhysRevB.38.9902",
1398 publisher = "American Physical Society",
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1405 journal = "Phys. Rev. Lett.",
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1432 title = "Carbon defects and defect reactions in silicon",
1433 author = "J. Tersoff",
1434 journal = "Phys. Rev. Lett.",
1437 pages = "1757--1760",
1441 doi = "10.1103/PhysRevLett.64.1757",
1442 publisher = "American Physical Society",
1446 title = "Point defects and dopant diffusion in silicon",
1447 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1448 journal = "Rev. Mod. Phys.",
1455 doi = "10.1103/RevModPhys.61.289",
1456 publisher = "American Physical Society",
1460 title = "Silicon carbide: synthesis and processing",
1461 journal = "Nucl. Instrum. Methods Phys. Res. B",
1466 note = "Radiation Effects in Insulators",
1468 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1474 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1475 Lin and B. Sverdlov and M. Burns",
1477 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1478 ZnSe-based semiconductor device technologies",
1481 journal = "J. Appl. Phys.",
1484 pages = "1363--1398",
1485 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1486 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1487 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1489 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1490 doi = "10.1063/1.358463",
1491 notes = "sic intro, properties",
1495 author = "Noch Unbekannt",
1496 title = "How to find references",
1497 journal = "Journal of Applied References",
1504 title = "Atomistic simulation of thermomechanical properties of
1506 author = "Meijie Tang and Sidney Yip",
1507 journal = "Phys. Rev. B",
1510 pages = "15150--15159",
1513 doi = "10.1103/PhysRevB.52.15150",
1514 notes = "modified tersoff, scale cutoff with volume, promising
1515 tersoff reparametrization",
1516 publisher = "American Physical Society",
1520 title = "Silicon carbide as a new {MEMS} technology",
1521 journal = "Sensors and Actuators A: Physical",
1527 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1528 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1529 author = "Pasqualina M. Sarro",
1531 keywords = "Silicon carbide",
1532 keywords = "Micromachining",
1533 keywords = "Mechanical stress",
1537 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1538 semiconductor for high-temperature applications: {A}
1540 journal = "Solid-State Electronics",
1543 pages = "1409--1422",
1546 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1547 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1548 author = "J. B. Casady and R. W. Johnson",
1549 notes = "sic intro",
1552 @Article{giancarli98,
1553 title = "Design requirements for Si{C}/Si{C} composites
1554 structural material in fusion power reactor blankets",
1555 journal = "Fusion Engineering and Design",
1561 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1562 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1563 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1564 Marois and N. B. Morley and J. F. Salavy",
1568 title = "Electrical and optical characterization of Si{C}",
1569 journal = "Physica B: Condensed Matter",
1575 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1576 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1577 author = "G. Pensl and W. J. Choyke",
1581 title = "Investigation of growth processes of ingots of silicon
1582 carbide single crystals",
1583 journal = "J. Cryst. Growth",
1588 notes = "modified lely process",
1590 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1591 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1592 author = "Yu. M. Tairov and V. F. Tsvetkov",
1596 title = "General principles of growing large-size single
1597 crystals of various silicon carbide polytypes",
1598 journal = "Journal of Crystal Growth",
1605 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1606 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1607 author = "Yu.M. Tairov and V. F. Tsvetkov",
1611 title = "Si{C} boule growth by sublimation vapor transport",
1612 journal = "Journal of Crystal Growth",
1619 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1620 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1621 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1622 R. H. Hopkins and W. J. Choyke",
1626 title = "Growth of large Si{C} single crystals",
1627 journal = "Journal of Crystal Growth",
1634 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1635 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1636 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1637 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1642 title = "Control of polytype formation by surface energy
1643 effects during the growth of Si{C} monocrystals by the
1644 sublimation method",
1645 journal = "Journal of Crystal Growth",
1652 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1653 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1654 author = "R. A. Stein and P. Lanig",
1655 notes = "6h and 4h, sublimation technique",
1659 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1662 title = "Production of large-area single-crystal wafers of
1663 cubic Si{C} for semiconductor devices",
1666 journal = "Appl. Phys. Lett.",
1670 keywords = "silicon carbides; layers; chemical vapor deposition;
1672 URL = "http://link.aip.org/link/?APL/42/460/1",
1673 doi = "10.1063/1.93970",
1674 notes = "cvd of 3c-sic on si, sic buffer layer",
1678 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1679 and Hiroyuki Matsunami",
1681 title = "Epitaxial growth and electric characteristics of cubic
1685 journal = "J. Appl. Phys.",
1688 pages = "4889--4893",
1689 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1690 doi = "10.1063/1.338355",
1691 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1696 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1698 title = "Growth and Characterization of Cubic Si{C}
1699 Single-Crystal Films on Si",
1702 journal = "Journal of The Electrochemical Society",
1705 pages = "1558--1565",
1706 keywords = "semiconductor materials; silicon compounds; carbon
1707 compounds; crystal morphology; electron mobility",
1708 URL = "http://link.aip.org/link/?JES/134/1558/1",
1709 doi = "10.1149/1.2100708",
1710 notes = "blue light emitting diodes (led)",
1714 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1715 and Hiroyuki Matsunami",
1716 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1720 journal = "J. Appl. Phys.",
1724 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1725 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1727 URL = "http://link.aip.org/link/?JAP/73/726/1",
1728 doi = "10.1063/1.353329",
1729 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1733 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1734 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1735 Yoganathan and J. Yang and P. Pirouz",
1737 title = "Growth of improved quality 3{C}-Si{C} films on
1738 6{H}-Si{C} substrates",
1741 journal = "Appl. Phys. Lett.",
1744 pages = "1353--1355",
1745 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1746 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1747 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1749 URL = "http://link.aip.org/link/?APL/56/1353/1",
1750 doi = "10.1063/1.102512",
1751 notes = "cvd of 3c-sic on 6h-sic",
1755 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1756 Thokala and M. J. Loboda",
1758 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1759 films on 6{H}-Si{C} by chemical vapor deposition from
1763 journal = "J. Appl. Phys.",
1766 pages = "1271--1273",
1767 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1768 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1770 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1771 doi = "10.1063/1.360368",
1772 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1776 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1777 [alpha]-Si{C}(0001) at low temperatures by solid-source
1778 molecular beam epitaxy",
1779 journal = "J. Cryst. Growth",
1785 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1786 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1787 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1788 Schr{\"{o}}ter and W. Richter",
1789 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1792 @Article{fissel95_apl,
1793 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1795 title = "Low-temperature growth of Si{C} thin films on Si and
1796 6{H}--Si{C} by solid-source molecular beam epitaxy",
1799 journal = "Appl. Phys. Lett.",
1802 pages = "3182--3184",
1803 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1805 URL = "http://link.aip.org/link/?APL/66/3182/1",
1806 doi = "10.1063/1.113716",
1807 notes = "mbe 3c-sic on si and 6h-sic",
1811 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1813 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1817 journal = "Appl. Phys. Lett.",
1821 URL = "http://link.aip.org/link/?APL/18/509/1",
1822 doi = "10.1063/1.1653516",
1823 notes = "first time sic by ibs, follow cites for precipitation
1828 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1829 J. Davis and G. E. Celler",
1831 title = "Formation of buried layers of beta-Si{C} using ion
1832 beam synthesis and incoherent lamp annealing",
1835 journal = "Appl. Phys. Lett.",
1838 pages = "2242--2244",
1839 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1840 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1841 URL = "http://link.aip.org/link/?APL/51/2242/1",
1842 doi = "10.1063/1.98953",
1843 notes = "nice tem images, sic by ibs",
1847 author = "R. I. Scace and G. A. Slack",
1849 title = "Solubility of Carbon in Silicon and Germanium",
1852 journal = "J. Chem. Phys.",
1855 pages = "1551--1555",
1856 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1857 doi = "10.1063/1.1730236",
1858 notes = "solubility of c in c-si, si-c phase diagram",
1862 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1863 F. W. Saris and W. Vandervorst",
1865 title = "Role of {C} and {B} clusters in transient diffusion of
1869 journal = "Appl. Phys. Lett.",
1872 pages = "1150--1152",
1873 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1874 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1876 URL = "http://link.aip.org/link/?APL/68/1150/1",
1877 doi = "10.1063/1.115706",
1878 notes = "suppression of transient enhanced diffusion (ted)",
1882 title = "Implantation and transient boron diffusion: the role
1883 of the silicon self-interstitial",
1884 journal = "Nucl. Instrum. Methods Phys. Res. B",
1889 note = "Selected Papers of the Tenth International Conference
1890 on Ion Implantation Technology (IIT '94)",
1892 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1893 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1894 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1899 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1900 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1901 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1904 title = "Physical mechanisms of transient enhanced dopant
1905 diffusion in ion-implanted silicon",
1908 journal = "J. Appl. Phys.",
1911 pages = "6031--6050",
1912 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1913 doi = "10.1063/1.364452",
1914 notes = "ted, transient enhanced diffusion, c silicon trap",
1918 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1920 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1921 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1924 journal = "Appl. Phys. Lett.",
1928 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1929 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1930 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1932 URL = "http://link.aip.org/link/?APL/64/324/1",
1933 doi = "10.1063/1.111195",
1934 notes = "beta sic nano crystals in si, mbe, annealing",
1938 author = "Richard A. Soref",
1940 title = "Optical band gap of the ternary semiconductor Si[sub 1
1941 - x - y]Ge[sub x]{C}[sub y]",
1944 journal = "J. Appl. Phys.",
1947 pages = "2470--2472",
1948 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1949 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1951 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1952 doi = "10.1063/1.349403",
1953 notes = "band gap of strained si by c",
1957 author = "E Kasper",
1958 title = "Superlattices of group {IV} elements, a new
1959 possibility to produce direct band gap material",
1960 journal = "Physica Scripta",
1963 URL = "http://stacks.iop.org/1402-4896/T35/232",
1965 notes = "superlattices, convert indirect band gap into a
1970 author = "H. J. Osten and J. Griesche and S. Scalese",
1972 title = "Substitutional carbon incorporation in epitaxial
1973 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1974 molecular beam epitaxy",
1977 journal = "Appl. Phys. Lett.",
1981 keywords = "molecular beam epitaxial growth; semiconductor growth;
1982 wide band gap semiconductors; interstitials; silicon
1984 URL = "http://link.aip.org/link/?APL/74/836/1",
1985 doi = "10.1063/1.123384",
1986 notes = "substitutional c in si",
1989 @Article{hohenberg64,
1990 title = "Inhomogeneous Electron Gas",
1991 author = "P. Hohenberg and W. Kohn",
1992 journal = "Phys. Rev.",
1995 pages = "B864--B871",
1999 doi = "10.1103/PhysRev.136.B864",
2000 publisher = "American Physical Society",
2001 notes = "density functional theory, dft",
2005 title = "Self-Consistent Equations Including Exchange and
2006 Correlation Effects",
2007 author = "W. Kohn and L. J. Sham",
2008 journal = "Phys. Rev.",
2011 pages = "A1133--A1138",
2015 doi = "10.1103/PhysRev.140.A1133",
2016 publisher = "American Physical Society",
2017 notes = "dft, exchange and correlation",
2021 title = "Strain-stabilized highly concentrated pseudomorphic
2022 $Si1-x$$Cx$ layers in Si",
2023 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2025 journal = "Phys. Rev. Lett.",
2028 pages = "3578--3581",
2032 doi = "10.1103/PhysRevLett.72.3578",
2033 publisher = "American Physical Society",
2034 notes = "high c concentration in si, heterostructure, strained
2039 title = "Electron Transport Model for Strained Silicon-Carbon
2041 author = "Shu-Tong Chang and Chung-Yi Lin",
2042 journal = "Japanese J. Appl. Phys.",
2045 pages = "2257--2262",
2048 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2049 doi = "10.1143/JJAP.44.2257",
2050 publisher = "The Japan Society of Applied Physics",
2051 notes = "enhance of electron mobility in starined si",
2055 author = "H. J. Osten and P. Gaworzewski",
2057 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2058 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2062 journal = "J. Appl. Phys.",
2065 pages = "4977--4981",
2066 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2067 semiconductors; semiconductor epitaxial layers; carrier
2068 density; Hall mobility; interstitials; defect states",
2069 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2070 doi = "10.1063/1.366364",
2071 notes = "charge transport in strained si",
2075 title = "Carbon-mediated aggregation of self-interstitials in
2076 silicon: {A} large-scale molecular dynamics study",
2077 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2078 journal = "Phys. Rev. B",
2085 doi = "10.1103/PhysRevB.69.155214",
2086 publisher = "American Physical Society",
2087 notes = "simulation using promising tersoff reparametrization",
2091 title = "Event-Based Relaxation of Continuous Disordered
2093 author = "G. T. Barkema and Normand Mousseau",
2094 journal = "Phys. Rev. Lett.",
2097 pages = "4358--4361",
2101 doi = "10.1103/PhysRevLett.77.4358",
2102 publisher = "American Physical Society",
2103 notes = "activation relaxation technique, art, speed up slow
2108 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2109 Minoukadeh and F. Willaime",
2111 title = "Some improvements of the activation-relaxation
2112 technique method for finding transition pathways on
2113 potential energy surfaces",
2116 journal = "J. Chem. Phys.",
2122 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2123 surfaces; vacancies (crystal)",
2124 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2125 doi = "10.1063/1.3088532",
2126 notes = "improvements to art, refs for methods to find
2127 transition pathways",
2130 @Article{parrinello81,
2131 author = "M. Parrinello and A. Rahman",
2133 title = "Polymorphic transitions in single crystals: {A} new
2134 molecular dynamics method",
2137 journal = "J. Appl. Phys.",
2140 pages = "7182--7190",
2141 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2142 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2143 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2144 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2145 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2147 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2148 doi = "10.1063/1.328693",
2151 @Article{stillinger85,
2152 title = "Computer simulation of local order in condensed phases
2154 author = "Frank H. Stillinger and Thomas A. Weber",
2155 journal = "Phys. Rev. B",
2158 pages = "5262--5271",
2162 doi = "10.1103/PhysRevB.31.5262",
2163 publisher = "American Physical Society",
2167 title = "Empirical potential for hydrocarbons for use in
2168 simulating the chemical vapor deposition of diamond
2170 author = "Donald W. Brenner",
2171 journal = "Phys. Rev. B",
2174 pages = "9458--9471",
2178 doi = "10.1103/PhysRevB.42.9458",
2179 publisher = "American Physical Society",
2180 notes = "brenner hydro carbons",
2184 title = "Modeling of Covalent Bonding in Solids by Inversion of
2185 Cohesive Energy Curves",
2186 author = "Martin Z. Bazant and Efthimios Kaxiras",
2187 journal = "Phys. Rev. Lett.",
2190 pages = "4370--4373",
2194 doi = "10.1103/PhysRevLett.77.4370",
2195 publisher = "American Physical Society",
2196 notes = "first si edip",
2200 title = "Environment-dependent interatomic potential for bulk
2202 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2204 journal = "Phys. Rev. B",
2207 pages = "8542--8552",
2211 doi = "10.1103/PhysRevB.56.8542",
2212 publisher = "American Physical Society",
2213 notes = "second si edip",
2217 title = "Interatomic potential for silicon defects and
2219 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2220 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2221 journal = "Phys. Rev. B",
2224 pages = "2539--2550",
2228 doi = "10.1103/PhysRevB.58.2539",
2229 publisher = "American Physical Society",
2230 notes = "latest si edip, good dislocation explanation",
2234 title = "{PARCAS} molecular dynamics code",
2235 author = "K. Nordlund",
2240 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2242 author = "Arthur F. Voter",
2243 journal = "Phys. Rev. Lett.",
2246 pages = "3908--3911",
2250 doi = "10.1103/PhysRevLett.78.3908",
2251 publisher = "American Physical Society",
2252 notes = "hyperdynamics, accelerated md",
2256 author = "Arthur F. Voter",
2258 title = "A method for accelerating the molecular dynamics
2259 simulation of infrequent events",
2262 journal = "J. Chem. Phys.",
2265 pages = "4665--4677",
2266 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2267 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2268 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2269 energy functions; surface diffusion; reaction kinetics
2270 theory; potential energy surfaces",
2271 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2272 doi = "10.1063/1.473503",
2273 notes = "improved hyperdynamics md",
2276 @Article{sorensen2000,
2277 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2279 title = "Temperature-accelerated dynamics for simulation of
2283 journal = "J. Chem. Phys.",
2286 pages = "9599--9606",
2287 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2288 MOLECULAR DYNAMICS METHOD; surface diffusion",
2289 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2290 doi = "10.1063/1.481576",
2291 notes = "temperature accelerated dynamics, tad",
2295 title = "Parallel replica method for dynamics of infrequent
2297 author = "Arthur F. Voter",
2298 journal = "Phys. Rev. B",
2301 pages = "R13985--R13988",
2305 doi = "10.1103/PhysRevB.57.R13985",
2306 publisher = "American Physical Society",
2307 notes = "parallel replica method, accelerated md",
2311 author = "Xiongwu Wu and Shaomeng Wang",
2313 title = "Enhancing systematic motion in molecular dynamics
2317 journal = "J. Chem. Phys.",
2320 pages = "9401--9410",
2321 keywords = "molecular dynamics method; argon; Lennard-Jones
2322 potential; crystallisation; liquid theory",
2323 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2324 doi = "10.1063/1.478948",
2325 notes = "self guided md, sgmd, accelerated md, enhancing
2329 @Article{choudhary05,
2330 author = "Devashish Choudhary and Paulette Clancy",
2332 title = "Application of accelerated molecular dynamics schemes
2333 to the production of amorphous silicon",
2336 journal = "J. Chem. Phys.",
2342 keywords = "molecular dynamics method; silicon; glass structure;
2343 amorphous semiconductors",
2344 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2345 doi = "10.1063/1.1878733",
2346 notes = "explanation of sgmd and hyper md, applied to amorphous
2351 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2353 title = "Carbon precipitation in silicon: Why is it so
2357 journal = "Appl. Phys. Lett.",
2360 pages = "3336--3338",
2361 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2362 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2364 URL = "http://link.aip.org/link/?APL/62/3336/1",
2365 doi = "10.1063/1.109063",
2366 notes = "interfacial energy of cubic sic and si",
2369 @Article{chaussende08,
2370 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2371 journal = "J. Cryst. Growth",
2376 note = "Proceedings of the E-MRS Conference, Symposium G -
2377 Substrates of Wide Bandgap Materials",
2379 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2380 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2381 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2382 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2383 and A. Andreadou and E. K. Polychroniadis and C.
2384 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2385 notes = "3c-sic crystal growth, sic fabrication + links,
2389 @Article{chaussende07,
2390 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2391 title = "Status of Si{C} bulk growth processes",
2392 journal = "Journal of Physics D: Applied Physics",
2396 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2398 notes = "review of sic single crystal growth methods, process
2403 title = "Forces in Molecules",
2404 author = "R. P. Feynman",
2405 journal = "Phys. Rev.",
2412 doi = "10.1103/PhysRev.56.340",
2413 publisher = "American Physical Society",
2414 notes = "hellmann feynman forces",
2418 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2419 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2420 their Contrasting Properties",
2421 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2423 journal = "Phys. Rev. Lett.",
2430 doi = "10.1103/PhysRevLett.84.943",
2431 publisher = "American Physical Society",
2432 notes = "si sio2 and sic sio2 interface",
2435 @Article{djurabekova08,
2436 title = "Atomistic simulation of the interface structure of Si
2437 nanocrystals embedded in amorphous silica",
2438 author = "Flyura Djurabekova and Kai Nordlund",
2439 journal = "Phys. Rev. B",
2446 doi = "10.1103/PhysRevB.77.115325",
2447 publisher = "American Physical Society",
2448 notes = "nc-si in sio2, interface energy, nc construction,
2449 angular distribution, coordination",
2453 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2454 W. Liang and J. Zou",
2456 title = "Nature of interfacial defects and their roles in
2457 strain relaxation at highly lattice mismatched
2458 3{C}-Si{C}/Si (001) interface",
2461 journal = "J. Appl. Phys.",
2467 keywords = "anelastic relaxation; crystal structure; dislocations;
2468 elemental semiconductors; semiconductor growth;
2469 semiconductor thin films; silicon; silicon compounds;
2470 stacking faults; wide band gap semiconductors",
2471 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2472 doi = "10.1063/1.3234380",
2473 notes = "sic/si interface, follow refs, tem image
2474 deconvolution, dislocation defects",
2477 @Article{kitabatake93,
2478 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2481 title = "Simulations and experiments of Si{C} heteroepitaxial
2482 growth on Si(001) surface",
2485 journal = "J. Appl. Phys.",
2488 pages = "4438--4445",
2489 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2490 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2491 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2492 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2493 doi = "10.1063/1.354385",
2494 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2499 title = "Strain relaxation and thermal stability of the
2500 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2502 journal = "Thin Solid Films",
2509 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2510 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2511 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2512 keywords = "Strain relaxation",
2513 keywords = "Interfaces",
2514 keywords = "Thermal stability",
2515 keywords = "Molecular dynamics",
2516 notes = "tersoff sic/si interface study",
2520 title = "Ab initio Study of Misfit Dislocations at the
2521 $Si{C}/Si(001)$ Interface",
2522 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2524 journal = "Phys. Rev. Lett.",
2531 doi = "10.1103/PhysRevLett.89.156101",
2532 publisher = "American Physical Society",
2533 notes = "sic/si interface study",
2536 @Article{pizzagalli03,
2537 title = "Theoretical investigations of a highly mismatched
2538 interface: Si{C}/Si(001)",
2539 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2541 journal = "Phys. Rev. B",
2548 doi = "10.1103/PhysRevB.68.195302",
2549 publisher = "American Physical Society",
2550 notes = "tersoff md and ab initio sic/si interface study",
2554 title = "Atomic configurations of dislocation core and twin
2555 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2556 electron microscopy",
2557 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2558 H. Zheng and J. W. Liang",
2559 journal = "Phys. Rev. B",
2566 doi = "10.1103/PhysRevB.75.184103",
2567 publisher = "American Physical Society",
2568 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2572 @Article{hornstra58,
2573 title = "Dislocations in the diamond lattice",
2574 journal = "Journal of Physics and Chemistry of Solids",
2581 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2582 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2583 author = "J. Hornstra",
2584 notes = "dislocations in diamond lattice",
2588 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2589 Ion `Hot' Implantation",
2590 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2591 Hirao and Naoki Arai and Tomio Izumi",
2592 journal = "Japanese Journal of Applied Physics",
2594 number = "Part 1, No. 2A",
2598 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2599 doi = "10.1143/JJAP.31.343",
2600 publisher = "The Japan Society of Applied Physics",
2601 notes = "c-c bonds in c implanted si, hot implantation
2602 efficiency, c-c hard to break by thermal annealing",
2605 @Article{eichhorn99,
2606 author = "F. Eichhorn and N. Schell and W. Matz and R.
2609 title = "Strain and Si{C} particle formation in silicon
2610 implanted with carbon ions of medium fluence studied by
2611 synchrotron x-ray diffraction",
2614 journal = "J. Appl. Phys.",
2617 pages = "4184--4187",
2618 keywords = "silicon; carbon; elemental semiconductors; chemical
2619 interdiffusion; ion implantation; X-ray diffraction;
2620 precipitation; semiconductor doping",
2621 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2622 doi = "10.1063/1.371344",
2623 notes = "sic conversion by ibs, detected substitutional carbon,
2624 expansion of si lattice",
2627 @Article{eichhorn02,
2628 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2629 Metzger and W. Matz and R. K{\"{o}}gler",
2631 title = "Structural relation between Si and Si{C} formed by
2632 carbon ion implantation",
2635 journal = "J. Appl. Phys.",
2638 pages = "1287--1292",
2639 keywords = "silicon compounds; wide band gap semiconductors; ion
2640 implantation; annealing; X-ray scattering; transmission
2641 electron microscopy",
2642 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2643 doi = "10.1063/1.1428105",
2644 notes = "3c-sic alignement to si host in ibs depending on
2645 temperature, might explain c into c sub trafo",
2649 author = "G Lucas and M Bertolus and L Pizzagalli",
2650 title = "An environment-dependent interatomic potential for
2651 silicon carbide: calculation of bulk properties,
2652 high-pressure phases, point and extended defects, and
2653 amorphous structures",
2654 journal = "J. Phys.: Condens. Matter",
2658 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2664 author = "J Godet and L Pizzagalli and S Brochard and P
2666 title = "Comparison between classical potentials and ab initio
2667 methods for silicon under large shear",
2668 journal = "J. Phys.: Condens. Matter",
2672 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2674 notes = "comparison of empirical potentials, stillinger weber,
2675 edip, tersoff, ab initio",
2678 @Article{moriguchi98,
2679 title = "Verification of Tersoff's Potential for Static
2680 Structural Analysis of Solids of Group-{IV} Elements",
2681 author = "Koji Moriguchi and Akira Shintani",
2682 journal = "Japanese J. Appl. Phys.",
2684 number = "Part 1, No. 2",
2688 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2689 doi = "10.1143/JJAP.37.414",
2690 publisher = "The Japan Society of Applied Physics",
2691 notes = "tersoff stringent test",
2694 @Article{mazzarolo01,
2695 title = "Low-energy recoils in crystalline silicon: Quantum
2697 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2698 Lulli and Eros Albertazzi",
2699 journal = "Phys. Rev. B",
2706 doi = "10.1103/PhysRevB.63.195207",
2707 publisher = "American Physical Society",
2710 @Article{holmstroem08,
2711 title = "Threshold defect production in silicon determined by
2712 density functional theory molecular dynamics
2714 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2715 journal = "Phys. Rev. B",
2722 doi = "10.1103/PhysRevB.78.045202",
2723 publisher = "American Physical Society",
2724 notes = "threshold displacement comparison empirical and ab
2728 @Article{nordlund97,
2729 title = "Repulsive interatomic potentials calculated using
2730 Hartree-Fock and density-functional theory methods",
2731 journal = "Nucl. Instrum. Methods Phys. Res. B",
2738 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2739 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2740 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2741 notes = "repulsive ab initio potential",
2745 title = "Efficiency of ab-initio total energy calculations for
2746 metals and semiconductors using a plane-wave basis
2748 journal = "Comput. Mater. Sci.",
2755 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2756 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2757 author = "G. Kresse and J. Furthm{\"{u}}ller",
2762 title = "Projector augmented-wave method",
2763 author = "P. E. Bl{\"o}chl",
2764 journal = "Phys. Rev. B",
2767 pages = "17953--17979",
2771 doi = "10.1103/PhysRevB.50.17953",
2772 publisher = "American Physical Society",
2773 notes = "paw method",
2777 title = "Norm-Conserving Pseudopotentials",
2778 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2779 journal = "Phys. Rev. Lett.",
2782 pages = "1494--1497",
2786 doi = "10.1103/PhysRevLett.43.1494",
2787 publisher = "American Physical Society",
2788 notes = "norm-conserving pseudopotentials",
2791 @Article{vanderbilt90,
2792 title = "Soft self-consistent pseudopotentials in a generalized
2793 eigenvalue formalism",
2794 author = "David Vanderbilt",
2795 journal = "Phys. Rev. B",
2798 pages = "7892--7895",
2802 doi = "10.1103/PhysRevB.41.7892",
2803 publisher = "American Physical Society",
2804 notes = "vasp pseudopotentials",
2808 title = "Accurate and simple density functional for the
2809 electronic exchange energy: Generalized gradient
2811 author = "John P. Perdew and Yue Wang",
2812 journal = "Phys. Rev. B",
2815 pages = "8800--8802",
2819 doi = "10.1103/PhysRevB.33.8800",
2820 publisher = "American Physical Society",
2821 notes = "rapid communication gga",
2825 title = "Generalized gradient approximations for exchange and
2826 correlation: {A} look backward and forward",
2827 journal = "Physica B: Condensed Matter",
2834 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2835 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2836 author = "John P. Perdew",
2837 notes = "gga overview",
2841 title = "Atoms, molecules, solids, and surfaces: Applications
2842 of the generalized gradient approximation for exchange
2844 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2845 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2846 and Carlos Fiolhais",
2847 journal = "Phys. Rev. B",
2850 pages = "6671--6687",
2854 doi = "10.1103/PhysRevB.46.6671",
2855 publisher = "American Physical Society",
2856 notes = "gga pw91 (as in vasp)",
2859 @Article{baldereschi73,
2860 title = "Mean-Value Point in the Brillouin Zone",
2861 author = "A. Baldereschi",
2862 journal = "Phys. Rev. B",
2865 pages = "5212--5215",
2869 doi = "10.1103/PhysRevB.7.5212",
2870 publisher = "American Physical Society",
2871 notes = "mean value k point",
2875 title = "Ab initio pseudopotential calculations of dopant
2877 journal = "Comput. Mater. Sci.",
2884 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2885 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2886 author = "Jing Zhu",
2887 keywords = "TED (transient enhanced diffusion)",
2888 keywords = "Boron dopant",
2889 keywords = "Carbon dopant",
2890 keywords = "Defect",
2891 keywords = "ab initio pseudopotential method",
2892 keywords = "Impurity cluster",
2893 notes = "binding of c to si interstitial, c in si defects",
2897 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2899 title = "Si{C} buried layer formation by ion beam synthesis at
2903 journal = "Appl. Phys. Lett.",
2906 pages = "2646--2648",
2907 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2908 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2909 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2910 ELECTRON MICROSCOPY",
2911 URL = "http://link.aip.org/link/?APL/66/2646/1",
2912 doi = "10.1063/1.113112",
2913 notes = "precipitation mechanism by substitutional carbon, si
2914 self interstitials react with further implanted c",
2918 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2919 Kolodzey and A. Hairie",
2921 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2925 journal = "J. Appl. Phys.",
2928 pages = "4631--4633",
2929 keywords = "silicon compounds; precipitation; localised modes;
2930 semiconductor epitaxial layers; infrared spectra;
2931 Fourier transform spectra; thermal stability;
2933 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2934 doi = "10.1063/1.368703",
2935 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2939 author = "R Jones and B J Coomer and P R Briddon",
2940 title = "Quantum mechanical modelling of defects in
2942 journal = "J. Phys.: Condens. Matter",
2946 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2948 notes = "ab inito init, vibrational modes, c defect in si",
2952 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2953 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2954 J. E. Greene and S. G. Bishop",
2956 title = "Carbon incorporation pathways and lattice sites in
2957 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2958 molecular-beam epitaxy",
2961 journal = "J. Appl. Phys.",
2964 pages = "5716--5727",
2965 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2966 doi = "10.1063/1.1465122",
2967 notes = "c substitutional incorporation pathway, dft and expt",
2971 title = "Dynamic properties of interstitial carbon and
2972 carbon-carbon pair defects in silicon",
2973 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2975 journal = "Phys. Rev. B",
2978 pages = "2188--2194",
2982 doi = "10.1103/PhysRevB.55.2188",
2983 publisher = "American Physical Society",
2984 notes = "ab initio c in si and di-carbon defect, no formation
2985 energies, different migration barriers and paths",
2989 title = "Interstitial carbon and the carbon-carbon pair in
2990 silicon: Semiempirical electronic-structure
2992 author = "Matthew J. Burnard and Gary G. DeLeo",
2993 journal = "Phys. Rev. B",
2996 pages = "10217--10225",
3000 doi = "10.1103/PhysRevB.47.10217",
3001 publisher = "American Physical Society",
3002 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3003 carbon defect, formation energies",
3007 title = "Electronic structure of interstitial carbon in
3009 author = "Morgan Besson and Gary G. DeLeo",
3010 journal = "Phys. Rev. B",
3013 pages = "4028--4033",
3017 doi = "10.1103/PhysRevB.43.4028",
3018 publisher = "American Physical Society",
3022 title = "Review of atomistic simulations of surface diffusion
3023 and growth on semiconductors",
3024 journal = "Comput. Mater. Sci.",
3029 note = "Proceedings of the Workshop on Virtual Molecular Beam
3032 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3033 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3034 author = "Efthimios Kaxiras",
3035 notes = "might contain c 100 db formation energy, overview md,
3036 tight binding, first principles",
3039 @Article{kaukonen98,
3040 title = "Effect of {N} and {B} doping on the growth of {CVD}
3042 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3044 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3045 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3047 journal = "Phys. Rev. B",
3050 pages = "9965--9970",
3054 doi = "10.1103/PhysRevB.57.9965",
3055 publisher = "American Physical Society",
3056 notes = "constrained conjugate gradient relaxation technique
3061 title = "Correlation between the antisite pair and the ${DI}$
3063 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3064 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3066 journal = "Phys. Rev. B",
3073 doi = "10.1103/PhysRevB.67.155203",
3074 publisher = "American Physical Society",
3078 title = "Production and recovery of defects in Si{C} after
3079 irradiation and deformation",
3080 journal = "J. Nucl. Mater.",
3083 pages = "1803--1808",
3087 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3088 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3089 author = "J. Chen and P. Jung and H. Klein",
3093 title = "Accumulation, dynamic annealing and thermal recovery
3094 of ion-beam-induced disorder in silicon carbide",
3095 journal = "Nucl. Instrum. Methods Phys. Res. B",
3102 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3103 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3104 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3107 @Article{bockstedte03,
3108 title = "Ab initio study of the migration of intrinsic defects
3110 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3112 journal = "Phys. Rev. B",
3119 doi = "10.1103/PhysRevB.68.205201",
3120 publisher = "American Physical Society",
3121 notes = "defect migration in sic",
3125 title = "Theoretical study of vacancy diffusion and
3126 vacancy-assisted clustering of antisites in Si{C}",
3127 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3129 journal = "Phys. Rev. B",
3136 doi = "10.1103/PhysRevB.68.155208",
3137 publisher = "American Physical Society",
3141 journal = "Telegrafiya i Telefoniya bez Provodov",
3145 author = "O. V. Lossev",
3149 title = "Luminous carborundum detector and detection effect and
3150 oscillations with crystals",
3151 journal = "Philosophical Magazine Series 7",
3154 pages = "1024--1044",
3156 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3157 author = "O. V. Lossev",
3161 journal = "Physik. Zeitschr.",
3165 author = "O. V. Lossev",
3169 journal = "Physik. Zeitschr.",
3173 author = "O. V. Lossev",
3177 journal = "Physik. Zeitschr.",
3181 author = "O. V. Lossev",
3185 title = "A note on carborundum",
3186 journal = "Electrical World",
3190 author = "H. J. Round",
3193 @Article{vashishath08,
3194 title = "Recent trends in silicon carbide device research",
3195 journal = "Mj. Int. J. Sci. Tech.",
3200 author = "Munish Vashishath and Ashoke K. Chatterjee",
3201 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3202 notes = "sic polytype electronic properties",
3206 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3208 title = "Growth and Properties of beta-Si{C} Single Crystals",
3211 journal = "Journal of Applied Physics",
3215 URL = "http://link.aip.org/link/?JAP/37/333/1",
3216 doi = "10.1063/1.1707837",
3217 notes = "sic melt growth",
3221 author = "A. E. van Arkel and J. H. de Boer",
3222 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3224 publisher = "WILEY-VCH Verlag GmbH",
3226 journal = "Z. Anorg. Chem.",
3229 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3230 doi = "10.1002/zaac.19251480133",
3231 notes = "van arkel apparatus",
3235 author = "K. Moers",
3237 journal = "Z. Anorg. Chem.",
3240 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3245 author = "J. T. Kendall",
3246 title = "Electronic Conduction in Silicon Carbide",
3249 journal = "The Journal of Chemical Physics",
3253 URL = "http://link.aip.org/link/?JCP/21/821/1",
3254 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3259 author = "J. A. Lely",
3261 journal = "Ber. Deut. Keram. Ges.",
3264 notes = "lely sublimation growth process",
3267 @Article{knippenberg63,
3268 author = "W. F. Knippenberg",
3270 journal = "Philips Res. Repts.",
3273 notes = "acheson process",
3276 @Article{hoffmann82,
3277 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3280 title = "Silicon carbide blue light emitting diodes with
3281 improved external quantum efficiency",
3284 journal = "Journal of Applied Physics",
3287 pages = "6962--6967",
3288 keywords = "light emitting diodes; silicon carbides; quantum
3289 efficiency; visible radiation; experimental data;
3290 epitaxy; fabrication; medium temperature; layers;
3291 aluminium; nitrogen; substrates; pn junctions;
3292 electroluminescence; spectra; current density;
3294 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3295 doi = "10.1063/1.330041",
3296 notes = "blue led, sublimation process",
3300 author = "Philip Neudeck",
3301 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3302 Road 44135 Cleveland OH",
3303 title = "Progress in silicon carbide semiconductor electronics
3305 journal = "Journal of Electronic Materials",
3306 publisher = "Springer Boston",
3308 keyword = "Chemistry and Materials Science",
3312 URL = "http://dx.doi.org/10.1007/BF02659688",
3313 note = "10.1007/BF02659688",
3315 notes = "sic data, advantages of 3c sic",
3318 @Article{bhatnagar93,
3319 author = "M. Bhatnagar and B. J. Baliga",
3320 journal = "Electron Devices, IEEE Transactions on",
3321 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3328 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3329 rectifiers;Si;SiC;breakdown voltages;drift region
3330 properties;output characteristics;power MOSFETs;power
3331 semiconductor devices;switching characteristics;thermal
3332 analysis;Schottky-barrier diodes;electric breakdown of
3333 solids;insulated gate field effect transistors;power
3334 transistors;semiconductor materials;silicon;silicon
3335 compounds;solid-state rectifiers;thermal analysis;",
3336 doi = "10.1109/16.199372",
3338 notes = "comparison 3c 6h sic and si devices",
3342 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3343 A. Powell and C. S. Salupo and L. G. Matus",
3344 journal = "Electron Devices, IEEE Transactions on",
3345 title = "Electrical properties of epitaxial 3{C}- and
3346 6{H}-Si{C} p-n junction diodes produced side-by-side on
3347 6{H}-Si{C} substrates",
3353 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3354 C;6H-SiC layers;6H-SiC substrates;CVD
3355 process;SiC;chemical vapor deposition;doping;electrical
3356 properties;epitaxial layers;light
3357 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3358 diodes;polytype;rectification characteristics;reverse
3359 leakage current;reverse voltages;temperature;leakage
3360 currents;power electronics;semiconductor
3361 diodes;semiconductor epitaxial layers;semiconductor
3362 growth;semiconductor materials;silicon
3363 compounds;solid-state rectifiers;substrates;vapour
3364 phase epitaxial growth;",
3365 doi = "10.1109/16.285038",
3367 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3372 author = "N. Schulze and D. L. Barrett and G. Pensl",
3374 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3375 single crystals by physical vapor transport",
3378 journal = "Applied Physics Letters",
3381 pages = "1632--1634",
3382 keywords = "silicon compounds; semiconductor materials;
3383 semiconductor growth; crystal growth from vapour;
3384 photoluminescence; Hall mobility",
3385 URL = "http://link.aip.org/link/?APL/72/1632/1",
3386 doi = "10.1063/1.121136",
3387 notes = "micropipe free 6h-sic pvt growth",