2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 journal = "Phys. Rev. B",
1540 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
1541 publisher = "American Physical Society",
1542 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1543 K. N. Lindner and W. G. Schmidt and E. Rauls",
1544 title = "Combined \textit{ab initio} and classical potential
1545 simulation study on silicon carbide precipitation in
1551 doi = "10.1103/PhysRevB.84.064126",
1553 abstract = "Atomistic simulations on the silicon carbide
1554 precipitation in bulk silicon employing both, classical
1555 potential and first-principles methods are presented.
1556 The calculations aim at a comprehensive, microscopic
1557 understanding of the precipitation mechanism in the
1558 context of controversial discussions in the literature.
1559 For the quantum-mechanical treatment, basic processes
1560 assumed in the precipitation process are calculated in
1561 feasible systems of small size. The migration mechanism
1562 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1563 1 0> self-interstitial in otherwise defect-free silicon
1564 are investigated using density functional theory
1565 calculations. The influence of a nearby vacancy,
1566 another carbon interstitial and a substitutional defect
1567 as well as a silicon self-interstitial has been
1568 investigated systematically. Interactions of various
1569 combinations of defects have been characterized
1570 including a couple of selected migration pathways
1571 within these configurations. Almost all of the
1572 investigated pairs of defects tend to agglomerate
1573 allowing for a reduction in strain. The formation of
1574 structures involving strong carbon-carbon bonds turns
1575 out to be very unlikely. In contrast, substitutional
1576 carbon occurs in all probability. A long range capture
1577 radius has been observed for pairs of interstitial
1578 carbon as well as interstitial carbon and vacancies. A
1579 rather small capture radius is predicted for
1580 substitutional carbon and silicon self-interstitials.
1581 Initial assumptions regarding the precipitation
1582 mechanism of silicon carbide in bulk silicon are
1583 established and conformability to experimental findings
1584 is discussed. Furthermore, results of the accurate
1585 first-principles calculations on defects and carbon
1586 diffusion in silicon are compared to results of
1587 classical potential simulations revealing significant
1588 limitations of the latter method. An approach to work
1589 around this problem is proposed. Finally, results of
1590 the classical potential molecular dynamics simulations
1591 of large systems are examined, which reinforce previous
1592 assumptions and give further insight into basic
1593 processes involved in the silicon carbide transition.",
1597 author = "J. K. N. Lindner and A. Frohnwieser and B.
1598 Rauschenbach and B. Stritzker",
1599 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1601 journal = "MRS Proc.",
1606 doi = "10.1557/PROC-354-171",
1607 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1608 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1609 notes = "first time ibs at moderate temperatures",
1613 title = "Formation of buried epitaxial silicon carbide layers
1614 in silicon by ion beam synthesis",
1615 journal = "Mater. Chem. Phys.",
1622 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1623 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1624 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1625 Götz and A. Frohnwieser and B. Rauschenbach and B.
1627 notes = "dose window",
1630 @Article{calcagno96,
1631 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1633 journal = "Nucl. Instrum. Methods Phys. Res. B",
1638 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1639 New Trends in Ion Beam Processing of Materials",
1641 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1642 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1643 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1644 Grimaldi and P. Musumeci",
1645 notes = "dose window, graphitic bonds",
1649 title = "Mechanisms of Si{C} Formation in the Ion Beam
1650 Synthesis of 3{C}-Si{C} Layers in Silicon",
1651 journal = "Mater. Sci. Forum",
1656 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1657 URL = "http://www.scientific.net/MSF.264-268.215",
1658 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1659 notes = "intermediate temperature for sharp interface + good
1664 title = "Controlling the density distribution of Si{C}
1665 nanocrystals for the ion beam synthesis of buried Si{C}
1667 journal = "Nucl. Instrum. Methods Phys. Res. B",
1674 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1675 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1676 author = "J. K. N. Lindner and B. Stritzker",
1677 notes = "two-step implantation process",
1680 @Article{lindner99_2,
1681 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1683 journal = "Nucl. Instrum. Methods Phys. Res. B",
1689 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1690 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1691 author = "J. K. N. Lindner and B. Stritzker",
1692 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1696 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1697 Basic physical processes",
1698 journal = "Nucl. Instrum. Methods Phys. Res. B",
1705 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1706 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1707 author = "J{\"{o}}rg K. N. Lindner",
1711 title = "High-dose carbon implantations into silicon:
1712 fundamental studies for new technological tricks",
1713 author = "J. K. N. Lindner",
1714 journal = "Appl. Phys. A",
1718 doi = "10.1007/s00339-002-2062-8",
1719 notes = "ibs, burried sic layers",
1723 title = "On the balance between ion beam induced nanoparticle
1724 formation and displacive precipitate resolution in the
1726 journal = "Mater. Sci. Eng., C",
1731 note = "Current Trends in Nanoscience - from Materials to
1734 doi = "DOI: 10.1016/j.msec.2005.09.099",
1735 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1736 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1738 notes = "c int diffusion barrier",
1741 @Article{haeberlen10,
1742 title = "Structural characterization of cubic and hexagonal
1743 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
1744 journal = "Journal of Crystal Growth",
1751 doi = "10.1016/j.jcrysgro.2009.12.048",
1752 URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
1753 author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
1754 K. N. Lindner and B. Stritzker",
1758 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1759 application in buffer layer for Ga{N} epitaxial
1761 journal = "Appl. Surf. Sci.",
1766 note = "APHYS'03 Special Issue",
1768 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1769 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1770 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1771 and S. Nishio and K. Yasuda and Y. Ishigami",
1772 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1775 @Article{yamamoto04,
1776 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1777 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1778 implantation into Si(1 1 1) substrate",
1779 journal = "J. Cryst. Growth",
1784 note = "Proceedings of the 11th Biennial (US) Workshop on
1785 Organometallic Vapor Phase Epitaxy (OMVPE)",
1787 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1788 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1789 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1790 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1791 notes = "gan on 3c-sic",
1795 title = "Substrates for gallium nitride epitaxy",
1796 journal = "Mater. Sci. Eng., R",
1803 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1804 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1805 author = "L. Liu and J. H. Edgar",
1806 notes = "gan substrates",
1809 @Article{takeuchi91,
1810 title = "Growth of single crystalline Ga{N} film on Si
1811 substrate using 3{C}-Si{C} as an intermediate layer",
1812 journal = "J. Cryst. Growth",
1819 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1820 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1821 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1822 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1823 notes = "gan on 3c-sic (first time?)",
1827 author = "B. J. Alder and T. E. Wainwright",
1828 title = "Phase Transition for a Hard Sphere System",
1831 journal = "J. Chem. Phys.",
1834 pages = "1208--1209",
1835 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1836 doi = "10.1063/1.1743957",
1840 author = "B. J. Alder and T. E. Wainwright",
1841 title = "Studies in Molecular Dynamics. {I}. General Method",
1844 journal = "J. Chem. Phys.",
1848 URL = "http://link.aip.org/link/?JCP/31/459/1",
1849 doi = "10.1063/1.1730376",
1852 @Article{horsfield96,
1853 title = "Bond-order potentials: Theory and implementation",
1854 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1855 D. G. Pettifor and M. Aoki",
1856 journal = "Phys. Rev. B",
1859 pages = "12694--12712",
1863 doi = "10.1103/PhysRevB.53.12694",
1864 publisher = "American Physical Society",
1868 title = "Empirical chemical pseudopotential theory of molecular
1869 and metallic bonding",
1870 author = "G. C. Abell",
1871 journal = "Phys. Rev. B",
1874 pages = "6184--6196",
1878 doi = "10.1103/PhysRevB.31.6184",
1879 publisher = "American Physical Society",
1882 @Article{tersoff_si1,
1883 title = "New empirical model for the structural properties of
1885 author = "J. Tersoff",
1886 journal = "Phys. Rev. Lett.",
1893 doi = "10.1103/PhysRevLett.56.632",
1894 publisher = "American Physical Society",
1898 title = "Development of a many-body Tersoff-type potential for
1900 author = "Brian W. Dodson",
1901 journal = "Phys. Rev. B",
1904 pages = "2795--2798",
1908 doi = "10.1103/PhysRevB.35.2795",
1909 publisher = "American Physical Society",
1912 @Article{tersoff_si2,
1913 title = "New empirical approach for the structure and energy of
1915 author = "J. Tersoff",
1916 journal = "Phys. Rev. B",
1919 pages = "6991--7000",
1923 doi = "10.1103/PhysRevB.37.6991",
1924 publisher = "American Physical Society",
1927 @Article{tersoff_si3,
1928 title = "Empirical interatomic potential for silicon with
1929 improved elastic properties",
1930 author = "J. Tersoff",
1931 journal = "Phys. Rev. B",
1934 pages = "9902--9905",
1938 doi = "10.1103/PhysRevB.38.9902",
1939 publisher = "American Physical Society",
1943 title = "Empirical Interatomic Potential for Carbon, with
1944 Applications to Amorphous Carbon",
1945 author = "J. Tersoff",
1946 journal = "Phys. Rev. Lett.",
1949 pages = "2879--2882",
1953 doi = "10.1103/PhysRevLett.61.2879",
1954 publisher = "American Physical Society",
1958 title = "Modeling solid-state chemistry: Interatomic potentials
1959 for multicomponent systems",
1960 author = "J. Tersoff",
1961 journal = "Phys. Rev. B",
1964 pages = "5566--5568",
1968 doi = "10.1103/PhysRevB.39.5566",
1969 publisher = "American Physical Society",
1973 title = "Carbon defects and defect reactions in silicon",
1974 author = "J. Tersoff",
1975 journal = "Phys. Rev. Lett.",
1978 pages = "1757--1760",
1982 doi = "10.1103/PhysRevLett.64.1757",
1983 publisher = "American Physical Society",
1987 title = "Point defects and dopant diffusion in silicon",
1988 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1989 journal = "Rev. Mod. Phys.",
1996 doi = "10.1103/RevModPhys.61.289",
1997 publisher = "American Physical Society",
2001 title = "Silicon carbide: synthesis and processing",
2002 journal = "Nucl. Instrum. Methods Phys. Res. B",
2007 note = "Radiation Effects in Insulators",
2009 doi = "DOI: 10.1016/0168-583X(96)00065-1",
2010 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
2011 author = "W. Wesch",
2015 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
2016 Palmour and J. A. Edmond",
2017 journal = "Proc. IEEE",
2018 title = "Thin film deposition and microelectronic and
2019 optoelectronic device fabrication and characterization
2020 in monocrystalline alpha and beta silicon carbide",
2026 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2027 diode;SiC;dry etching;electrical
2028 contacts;etching;impurity incorporation;optoelectronic
2029 device fabrication;solid-state devices;surface
2030 chemistry;Schottky effect;Schottky gate field effect
2031 transistors;Schottky-barrier
2032 diodes;etching;heterojunction bipolar
2033 transistors;insulated gate field effect
2034 transistors;light emitting diodes;semiconductor
2035 materials;semiconductor thin films;silicon compounds;",
2036 doi = "10.1109/5.90132",
2038 notes = "sic growth methods",
2042 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2043 Lin and B. Sverdlov and M. Burns",
2045 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2046 ZnSe-based semiconductor device technologies",
2049 journal = "J. Appl. Phys.",
2052 pages = "1363--1398",
2053 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2054 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2055 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2057 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2058 doi = "10.1063/1.358463",
2059 notes = "sic intro, properties",
2063 author = "Noch Unbekannt",
2064 title = "How to find references",
2065 journal = "Journal of Applied References",
2072 title = "Atomistic simulation of thermomechanical properties of
2074 author = "Meijie Tang and Sidney Yip",
2075 journal = "Phys. Rev. B",
2078 pages = "15150--15159",
2081 doi = "10.1103/PhysRevB.52.15150",
2082 notes = "modified tersoff, scale cutoff with volume, promising
2083 tersoff reparametrization",
2084 publisher = "American Physical Society",
2088 title = "Silicon carbide as a new {MEMS} technology",
2089 journal = "Seonsor. Actuator. A",
2095 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2096 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2097 author = "Pasqualina M. Sarro",
2099 keywords = "Silicon carbide",
2100 keywords = "Micromachining",
2101 keywords = "Mechanical stress",
2105 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2106 semiconductor for high-temperature applications: {A}
2108 journal = "Solid-State Electron.",
2111 pages = "1409--1422",
2114 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2115 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2116 author = "J. B. Casady and R. W. Johnson",
2117 notes = "sic intro",
2120 @Article{giancarli98,
2121 title = "Design requirements for Si{C}/Si{C} composites
2122 structural material in fusion power reactor blankets",
2123 journal = "Fusion Eng. Des.",
2129 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2130 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2131 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2132 Marois and N. B. Morley and J. F. Salavy",
2136 title = "Electrical and optical characterization of Si{C}",
2137 journal = "Physica B",
2143 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2144 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2145 author = "G. Pensl and W. J. Choyke",
2149 title = "Investigation of growth processes of ingots of silicon
2150 carbide single crystals",
2151 journal = "J. Cryst. Growth",
2156 notes = "modified lely process",
2158 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2159 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2160 author = "Yu. M. Tairov and V. F. Tsvetkov",
2164 title = "General principles of growing large-size single
2165 crystals of various silicon carbide polytypes",
2166 journal = "J. Cryst. Growth",
2173 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2174 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2175 author = "Yu.M. Tairov and V. F. Tsvetkov",
2179 title = "Si{C} boule growth by sublimation vapor transport",
2180 journal = "J. Cryst. Growth",
2187 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2188 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2189 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2190 R. H. Hopkins and W. J. Choyke",
2194 title = "Growth of large Si{C} single crystals",
2195 journal = "J. Cryst. Growth",
2202 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2203 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2204 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2205 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2210 title = "Control of polytype formation by surface energy
2211 effects during the growth of Si{C} monocrystals by the
2212 sublimation method",
2213 journal = "J. Cryst. Growth",
2220 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2221 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2222 author = "R. A. Stein and P. Lanig",
2223 notes = "6h and 4h, sublimation technique",
2227 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2230 title = "Production of large-area single-crystal wafers of
2231 cubic Si{C} for semiconductor devices",
2234 journal = "Appl. Phys. Lett.",
2238 keywords = "silicon carbides; layers; chemical vapor deposition;
2240 URL = "http://link.aip.org/link/?APL/42/460/1",
2241 doi = "10.1063/1.93970",
2242 notes = "cvd of 3c-sic on si, sic buffer layer",
2245 @Article{nagasawa06,
2246 author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
2247 title = "Reducing Planar Defects in 3{C}¿Si{C}",
2248 journal = "Chemical Vapor Deposition",
2251 publisher = "WILEY-VCH Verlag",
2253 URL = "http://dx.doi.org/10.1002/cvde.200506466",
2254 doi = "10.1002/cvde.200506466",
2256 keywords = "Defect structures, Epitaxy, Silicon carbide",
2258 notes = "cvd on si",
2262 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2263 and Hiroyuki Matsunami",
2265 title = "Epitaxial growth and electric characteristics of cubic
2269 journal = "J. Appl. Phys.",
2272 pages = "4889--4893",
2273 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2274 doi = "10.1063/1.338355",
2275 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2280 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2282 title = "Growth and Characterization of Cubic Si{C}
2283 Single-Crystal Films on Si",
2286 journal = "J. Electrochem. Soc.",
2289 pages = "1558--1565",
2290 keywords = "semiconductor materials; silicon compounds; carbon
2291 compounds; crystal morphology; electron mobility",
2292 URL = "http://link.aip.org/link/?JES/134/1558/1",
2293 doi = "10.1149/1.2100708",
2294 notes = "blue light emitting diodes (led)",
2297 @Article{powell87_2,
2298 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2299 C. M. Chorey and T. T. Cheng and P. Pirouz",
2301 title = "Improved beta-Si{C} heteroepitaxial films using
2302 off-axis Si substrates",
2305 journal = "Appl. Phys. Lett.",
2309 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2310 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2311 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2312 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2313 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2314 URL = "http://link.aip.org/link/?APL/51/823/1",
2315 doi = "10.1063/1.98824",
2316 notes = "improved sic on off-axis si substrates, reduced apbs",
2320 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2321 journal = "J. Cryst. Growth",
2328 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2329 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2330 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2332 notes = "step-controlled epitaxy model",
2336 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2337 and Hiroyuki Matsunami",
2338 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2342 journal = "J. Appl. Phys.",
2346 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2347 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2349 URL = "http://link.aip.org/link/?JAP/73/726/1",
2350 doi = "10.1063/1.353329",
2351 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2354 @Article{powell90_2,
2355 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2356 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2357 Yoganathan and J. Yang and P. Pirouz",
2359 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2360 vicinal (0001) 6{H}-Si{C} wafers",
2363 journal = "Appl. Phys. Lett.",
2366 pages = "1442--1444",
2367 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2368 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2369 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2370 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2371 URL = "http://link.aip.org/link/?APL/56/1442/1",
2372 doi = "10.1063/1.102492",
2373 notes = "cvd of 6h-sic on 6h-sic",
2377 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2379 title = "Chemical vapor deposition and characterization of
2380 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2384 journal = "J. Appl. Phys.",
2387 pages = "2672--2679",
2388 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2389 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2390 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2391 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2392 PHASE EPITAXY; CRYSTAL ORIENTATION",
2393 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2394 doi = "10.1063/1.341608",
2398 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2399 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2400 Yoganathan and J. Yang and P. Pirouz",
2402 title = "Growth of improved quality 3{C}-Si{C} films on
2403 6{H}-Si{C} substrates",
2406 journal = "Appl. Phys. Lett.",
2409 pages = "1353--1355",
2410 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2411 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2412 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2414 URL = "http://link.aip.org/link/?APL/56/1353/1",
2415 doi = "10.1063/1.102512",
2416 notes = "cvd of 3c-sic on 6h-sic",
2420 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2421 Rozgonyi and K. L. More",
2423 title = "An examination of double positioning boundaries and
2424 interface misfit in beta-Si{C} films on alpha-Si{C}
2428 journal = "J. Appl. Phys.",
2431 pages = "2645--2650",
2432 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2433 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2434 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2435 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2436 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2437 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2438 doi = "10.1063/1.341004",
2442 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2443 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2444 and W. J. Choyke and L. Clemen and M. Yoganathan",
2446 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2447 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2450 journal = "Appl. Phys. Lett.",
2454 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2455 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2456 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2457 URL = "http://link.aip.org/link/?APL/59/333/1",
2458 doi = "10.1063/1.105587",
2462 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2463 Thokala and M. J. Loboda",
2465 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2466 films on 6{H}-Si{C} by chemical vapor deposition from
2470 journal = "J. Appl. Phys.",
2473 pages = "1271--1273",
2474 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2475 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2477 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2478 doi = "10.1063/1.360368",
2479 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2483 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2484 properties of its p-n junction",
2485 journal = "J. Cryst. Growth",
2492 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2493 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2494 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2496 notes = "first time ssmbe of 3c-sic on 6h-sic",
2500 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2501 [alpha]-Si{C}(0001) at low temperatures by solid-source
2502 molecular beam epitaxy",
2503 journal = "J. Cryst. Growth",
2509 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2510 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2511 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2512 Schr{\"{o}}ter and W. Richter",
2513 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2516 @Article{fissel95_apl,
2517 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2519 title = "Low-temperature growth of Si{C} thin films on Si and
2520 6{H}--Si{C} by solid-source molecular beam epitaxy",
2523 journal = "Appl. Phys. Lett.",
2526 pages = "3182--3184",
2527 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2529 URL = "http://link.aip.org/link/?APL/66/3182/1",
2530 doi = "10.1063/1.113716",
2531 notes = "mbe 3c-sic on si and 6h-sic",
2535 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2536 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2538 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2539 migration enhanced epitaxy controlled to an atomic
2540 level using surface superstructures",
2543 journal = "Appl. Phys. Lett.",
2546 pages = "1204--1206",
2547 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2548 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2550 URL = "http://link.aip.org/link/?APL/68/1204/1",
2551 doi = "10.1063/1.115969",
2552 notes = "ss mbe sic, superstructure, reconstruction",
2556 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2557 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2558 C. M. Bertoni and A. Catellani",
2559 journal = "Phys. Rev. Lett.",
2566 doi = "10.1103/PhysRevLett.91.136101",
2567 publisher = "American Physical Society",
2568 notes = "dft calculations mbe sic growth",
2572 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2574 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2578 journal = "Appl. Phys. Lett.",
2582 URL = "http://link.aip.org/link/?APL/18/509/1",
2583 doi = "10.1063/1.1653516",
2584 notes = "first time sic by ibs, follow cites for precipitation
2589 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2590 and E. V. Lubopytova",
2591 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2592 by ion implantation",
2593 publisher = "Taylor \& Francis",
2595 journal = "Radiat. Eff.",
2599 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2600 notes = "3c-sic for different temperatures, amorphous, poly,
2601 single crystalline",
2604 @Article{akimchenko80,
2605 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2606 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2607 title = "Structure and optical properties of silicon implanted
2608 by high doses of 70 and 310 ke{V} carbon ions",
2609 publisher = "Taylor \& Francis",
2611 journal = "Radiat. Eff.",
2615 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2616 notes = "3c-sic nucleation by thermal spikes",
2620 title = "Structure and annealing properties of silicon carbide
2621 thin layers formed by implantation of carbon ions in
2623 journal = "Thin Solid Films",
2630 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2631 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2632 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2637 title = "Characteristics of the synthesis of [beta]-Si{C} by
2638 the implantation of carbon ions into silicon",
2639 journal = "Thin Solid Films",
2646 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2647 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2648 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2653 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2654 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2655 Chater and J. A. Iulner and J. Davis",
2656 title = "Formation mechanisms and structures of insulating
2657 compounds formed in silicon by ion beam synthesis",
2658 publisher = "Taylor \& Francis",
2660 journal = "Radiat. Eff.",
2664 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2665 notes = "ibs, comparison with sio and sin, higher temp or time,
2666 no c redistribution",
2670 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2671 J. Davis and G. E. Celler",
2673 title = "Formation of buried layers of beta-Si{C} using ion
2674 beam synthesis and incoherent lamp annealing",
2677 journal = "Appl. Phys. Lett.",
2680 pages = "2242--2244",
2681 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2682 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2683 URL = "http://link.aip.org/link/?APL/51/2242/1",
2684 doi = "10.1063/1.98953",
2685 notes = "nice tem images, sic by ibs",
2689 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2690 and M. Olivier and A. M. Papon and G. Rolland",
2692 title = "High-temperature ion beam synthesis of cubic Si{C}",
2695 journal = "J. Appl. Phys.",
2698 pages = "2908--2912",
2699 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2700 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2701 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2702 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2703 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2704 REACTIONS; MONOCRYSTALS",
2705 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2706 doi = "10.1063/1.346092",
2707 notes = "triple energy implantation to overcome high annealing
2712 author = "R. I. Scace and G. A. Slack",
2714 title = "Solubility of Carbon in Silicon and Germanium",
2717 journal = "J. Chem. Phys.",
2720 pages = "1551--1555",
2721 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2722 doi = "10.1063/1.1730236",
2723 notes = "solubility of c in c-si, si-c phase diagram",
2727 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2729 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2730 Laboratories Eindhoven Netherlands Eindhoven
2732 title = "Boron implantations in silicon: {A} comparison of
2733 charge carrier and boron concentration profiles",
2734 journal = "Appl. Phys. A",
2735 publisher = "Springer Berlin / Heidelberg",
2737 keyword = "Physics and Astronomy",
2741 URL = "http://dx.doi.org/10.1007/BF00884267",
2742 note = "10.1007/BF00884267",
2744 notes = "first time ted (only for boron?)",
2748 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2751 title = "Rapid annealing and the anomalous diffusion of ion
2752 implanted boron into silicon",
2755 journal = "Appl. Phys. Lett.",
2759 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2760 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2761 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2762 URL = "http://link.aip.org/link/?APL/50/416/1",
2763 doi = "10.1063/1.98160",
2764 notes = "ted of boron in si",
2768 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2771 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2772 time, and matrix dependence of atomic and electrical
2776 journal = "J. Appl. Phys.",
2779 pages = "6191--6198",
2780 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2781 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2782 CRYSTALS; AMORPHIZATION",
2783 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2784 doi = "10.1063/1.346910",
2785 notes = "ted of boron in si",
2789 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2790 F. W. Saris and W. Vandervorst",
2792 title = "Role of {C} and {B} clusters in transient diffusion of
2796 journal = "Appl. Phys. Lett.",
2799 pages = "1150--1152",
2800 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2801 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2803 URL = "http://link.aip.org/link/?APL/68/1150/1",
2804 doi = "10.1063/1.115706",
2805 notes = "suppression of transient enhanced diffusion (ted)",
2809 title = "Implantation and transient boron diffusion: the role
2810 of the silicon self-interstitial",
2811 journal = "Nucl. Instrum. Methods Phys. Res. B",
2816 note = "Selected Papers of the Tenth International Conference
2817 on Ion Implantation Technology (IIT '94)",
2819 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2820 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2821 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2826 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2827 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2828 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2831 title = "Physical mechanisms of transient enhanced dopant
2832 diffusion in ion-implanted silicon",
2835 journal = "J. Appl. Phys.",
2838 pages = "6031--6050",
2839 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2840 doi = "10.1063/1.364452",
2841 notes = "ted, transient enhanced diffusion, c silicon trap",
2845 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2847 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2848 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2851 journal = "Appl. Phys. Lett.",
2855 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2856 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2857 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2859 URL = "http://link.aip.org/link/?APL/64/324/1",
2860 doi = "10.1063/1.111195",
2861 notes = "beta sic nano crystals in si, mbe, annealing",
2865 author = "Richard A. Soref",
2867 title = "Optical band gap of the ternary semiconductor Si[sub 1
2868 - x - y]Ge[sub x]{C}[sub y]",
2871 journal = "J. Appl. Phys.",
2874 pages = "2470--2472",
2875 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2876 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2878 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2879 doi = "10.1063/1.349403",
2880 notes = "band gap of strained si by c",
2884 author = "E Kasper",
2885 title = "Superlattices of group {IV} elements, a new
2886 possibility to produce direct band gap material",
2887 journal = "Phys. Scr.",
2890 URL = "http://stacks.iop.org/1402-4896/T35/232",
2892 notes = "superlattices, convert indirect band gap into a
2897 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2900 title = "Growth and strain compensation effects in the ternary
2901 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2904 journal = "Appl. Phys. Lett.",
2907 pages = "3033--3035",
2908 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2909 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2910 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2911 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2913 URL = "http://link.aip.org/link/?APL/60/3033/1",
2914 doi = "10.1063/1.106774",
2918 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2921 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2925 journal = "J. Vac. Sci. Technol. B",
2928 pages = "1064--1068",
2929 location = "Ottawa (Canada)",
2930 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2931 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2932 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2933 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2934 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2935 doi = "10.1116/1.587008",
2936 notes = "substitutional c in si by mbe",
2939 @Article{powell93_2,
2940 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2941 of the ternary system",
2942 journal = "J. Cryst. Growth",
2949 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2950 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2951 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2956 author = "H. J. Osten",
2957 title = "Modification of Growth Modes in Lattice-Mismatched
2958 Epitaxial Systems: Si/Ge",
2959 journal = "phys. status solidi (a)",
2962 publisher = "WILEY-VCH Verlag",
2964 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2965 doi = "10.1002/pssa.2211450203",
2970 @Article{dietrich94,
2971 title = "Lattice distortion in a strain-compensated
2972 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2973 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2974 Methfessel and P. Zaumseil",
2975 journal = "Phys. Rev. B",
2978 pages = "17185--17190",
2982 doi = "10.1103/PhysRevB.49.17185",
2983 publisher = "American Physical Society",
2987 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2989 title = "Growth of an inverse tetragonal distorted SiGe layer
2990 on Si(001) by adding small amounts of carbon",
2993 journal = "Appl. Phys. Lett.",
2996 pages = "3440--3442",
2997 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2998 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2999 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
3001 URL = "http://link.aip.org/link/?APL/64/3440/1",
3002 doi = "10.1063/1.111235",
3003 notes = "inversely strained / distorted heterostructure",
3007 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
3008 LeGoues and J. C. Tsang and F. Cardone",
3010 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
3011 molecular beam epitaxy",
3014 journal = "Appl. Phys. Lett.",
3018 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
3019 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
3020 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
3021 FILM GROWTH; MICROSTRUCTURE",
3022 URL = "http://link.aip.org/link/?APL/60/356/1",
3023 doi = "10.1063/1.106655",
3027 author = "H. J. Osten and J. Griesche and S. Scalese",
3029 title = "Substitutional carbon incorporation in epitaxial
3030 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
3031 molecular beam epitaxy",
3034 journal = "Appl. Phys. Lett.",
3038 keywords = "molecular beam epitaxial growth; semiconductor growth;
3039 wide band gap semiconductors; interstitials; silicon
3041 URL = "http://link.aip.org/link/?APL/74/836/1",
3042 doi = "10.1063/1.123384",
3043 notes = "substitutional c in si by mbe",
3047 author = "M. Born and R. Oppenheimer",
3048 title = "Zur Quantentheorie der Molekeln",
3049 journal = "Ann. Phys. (Leipzig)",
3052 publisher = "WILEY-VCH Verlag",
3054 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3055 doi = "10.1002/andp.19273892002",
3060 @Article{hohenberg64,
3061 title = "Inhomogeneous Electron Gas",
3062 author = "P. Hohenberg and W. Kohn",
3063 journal = "Phys. Rev.",
3066 pages = "B864--B871",
3070 doi = "10.1103/PhysRev.136.B864",
3071 publisher = "American Physical Society",
3072 notes = "density functional theory, dft",
3076 title = "The calculation of atomic fields",
3077 author = "L. H. Thomas",
3078 journal = "Proc. Cambridge Philos. Soc.",
3082 doi = "10.1017/S0305004100011683",
3087 author = "E. Fermi",
3088 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3096 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3097 Central Field. Part {I}. Theory and Methods",
3098 author = "D. R. Hartree",
3099 journal = "Proc. Cambridge Philos. Soc.",
3103 doi = "10.1017/S0305004100011919",
3107 title = "The Theory of Complex Spectra",
3108 author = "J. C. Slater",
3109 journal = "Phys. Rev.",
3112 pages = "1293--1322",
3116 doi = "10.1103/PhysRev.34.1293",
3117 publisher = "American Physical Society",
3121 title = "Self-Consistent Equations Including Exchange and
3122 Correlation Effects",
3123 author = "W. Kohn and L. J. Sham",
3124 journal = "Phys. Rev.",
3127 pages = "A1133--A1138",
3131 doi = "10.1103/PhysRev.140.A1133",
3132 publisher = "American Physical Society",
3133 notes = "dft, exchange and correlation",
3137 title = "Density Functional and Density Matrix Method Scaling
3138 Linearly with the Number of Atoms",
3140 journal = "Phys. Rev. Lett.",
3143 pages = "3168--3171",
3147 doi = "10.1103/PhysRevLett.76.3168",
3148 publisher = "American Physical Society",
3152 title = "Edge Electron Gas",
3153 author = "Walter Kohn and Ann E. Mattsson",
3154 journal = "Phys. Rev. Lett.",
3157 pages = "3487--3490",
3161 doi = "10.1103/PhysRevLett.81.3487",
3162 publisher = "American Physical Society",
3166 title = "Nobel Lecture: Electronic structure of matter---wave
3167 functions and density functionals",
3169 journal = "Rev. Mod. Phys.",
3172 pages = "1253--1266",
3176 doi = "10.1103/RevModPhys.71.1253",
3177 publisher = "American Physical Society",
3181 title = "Iterative minimization techniques for ab initio
3182 total-energy calculations: molecular dynamics and
3183 conjugate gradients",
3184 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3185 Arias and J. D. Joannopoulos",
3186 journal = "Rev. Mod. Phys.",
3189 pages = "1045--1097",
3193 doi = "10.1103/RevModPhys.64.1045",
3194 publisher = "American Physical Society",
3198 title = "Electron densities in search of Hamiltonians",
3199 author = "Mel Levy",
3200 journal = "Phys. Rev. A",
3203 pages = "1200--1208",
3207 doi = "10.1103/PhysRevA.26.1200",
3208 publisher = "American Physical Society",
3212 title = "Strain-stabilized highly concentrated pseudomorphic
3213 $Si1-x$$Cx$ layers in Si",
3214 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3216 journal = "Phys. Rev. Lett.",
3219 pages = "3578--3581",
3223 doi = "10.1103/PhysRevLett.72.3578",
3224 publisher = "American Physical Society",
3225 notes = "high c concentration in si, heterostructure, strained
3230 title = "Phosphorous Doping of Strain-Induced
3231 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3232 by Low-Temperature Chemical Vapor Deposition",
3233 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3234 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3235 journal = "Japanese J. Appl. Phys.",
3237 number = "Part 1, No. 4B",
3238 pages = "2472--2475",
3241 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3242 doi = "10.1143/JJAP.41.2472",
3243 publisher = "The Japan Society of Applied Physics",
3244 notes = "experimental charge carrier mobility in strained si",
3248 title = "Electron Transport Model for Strained Silicon-Carbon
3250 author = "Shu-Tong Chang and Chung-Yi Lin",
3251 journal = "Japanese J. Appl. Phys.",
3254 pages = "2257--2262",
3257 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3258 doi = "10.1143/JJAP.44.2257",
3259 publisher = "The Japan Society of Applied Physics",
3260 notes = "enhance of electron mobility in strained si",
3263 @Article{kissinger94,
3264 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3267 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3268 y] layers on Si(001)",
3271 journal = "Appl. Phys. Lett.",
3274 pages = "3356--3358",
3275 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3276 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3277 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3278 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3279 URL = "http://link.aip.org/link/?APL/65/3356/1",
3280 doi = "10.1063/1.112390",
3281 notes = "strained si influence on optical properties",
3285 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3288 title = "Substitutional versus interstitial carbon
3289 incorporation during pseudomorphic growth of Si[sub 1 -
3290 y]{C}[sub y] on Si(001)",
3293 journal = "J. Appl. Phys.",
3296 pages = "6711--6715",
3297 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3298 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3300 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3301 doi = "10.1063/1.363797",
3302 notes = "mbe substitutional vs interstitial c incorporation",
3306 author = "H. J. Osten and P. Gaworzewski",
3308 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3309 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3313 journal = "J. Appl. Phys.",
3316 pages = "4977--4981",
3317 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3318 semiconductors; semiconductor epitaxial layers; carrier
3319 density; Hall mobility; interstitials; defect states",
3320 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3321 doi = "10.1063/1.366364",
3322 notes = "charge transport in strained si",
3326 title = "Carbon-mediated aggregation of self-interstitials in
3327 silicon: {A} large-scale molecular dynamics study",
3328 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3329 journal = "Phys. Rev. B",
3336 doi = "10.1103/PhysRevB.69.155214",
3337 publisher = "American Physical Society",
3338 notes = "simulation using promising tersoff reparametrization",
3342 title = "Event-Based Relaxation of Continuous Disordered
3344 author = "G. T. Barkema and Normand Mousseau",
3345 journal = "Phys. Rev. Lett.",
3348 pages = "4358--4361",
3352 doi = "10.1103/PhysRevLett.77.4358",
3353 publisher = "American Physical Society",
3354 notes = "activation relaxation technique, art, speed up slow
3359 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3360 Minoukadeh and F. Willaime",
3362 title = "Some improvements of the activation-relaxation
3363 technique method for finding transition pathways on
3364 potential energy surfaces",
3367 journal = "J. Chem. Phys.",
3373 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3374 surfaces; vacancies (crystal)",
3375 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3376 doi = "10.1063/1.3088532",
3377 notes = "improvements to art, refs for methods to find
3378 transition pathways",
3381 @Article{parrinello81,
3382 author = "M. Parrinello and A. Rahman",
3384 title = "Polymorphic transitions in single crystals: {A} new
3385 molecular dynamics method",
3388 journal = "J. Appl. Phys.",
3391 pages = "7182--7190",
3392 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3393 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3394 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3395 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3396 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3398 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3399 doi = "10.1063/1.328693",
3402 @Article{stillinger85,
3403 title = "Computer simulation of local order in condensed phases
3405 author = "Frank H. Stillinger and Thomas A. Weber",
3406 journal = "Phys. Rev. B",
3409 pages = "5262--5271",
3413 doi = "10.1103/PhysRevB.31.5262",
3414 publisher = "American Physical Society",
3418 title = "Empirical potential for hydrocarbons for use in
3419 simulating the chemical vapor deposition of diamond
3421 author = "Donald W. Brenner",
3422 journal = "Phys. Rev. B",
3425 pages = "9458--9471",
3429 doi = "10.1103/PhysRevB.42.9458",
3430 publisher = "American Physical Society",
3431 notes = "brenner hydro carbons",
3435 title = "Modeling of Covalent Bonding in Solids by Inversion of
3436 Cohesive Energy Curves",
3437 author = "Martin Z. Bazant and Efthimios Kaxiras",
3438 journal = "Phys. Rev. Lett.",
3441 pages = "4370--4373",
3445 doi = "10.1103/PhysRevLett.77.4370",
3446 publisher = "American Physical Society",
3447 notes = "first si edip",
3451 title = "Environment-dependent interatomic potential for bulk
3453 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3455 journal = "Phys. Rev. B",
3458 pages = "8542--8552",
3462 doi = "10.1103/PhysRevB.56.8542",
3463 publisher = "American Physical Society",
3464 notes = "second si edip",
3468 title = "Interatomic potential for silicon defects and
3470 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3471 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3472 journal = "Phys. Rev. B",
3475 pages = "2539--2550",
3479 doi = "10.1103/PhysRevB.58.2539",
3480 publisher = "American Physical Society",
3481 notes = "latest si edip, good dislocation explanation",
3485 journal = "{PARCAS} molecular dynamics code",
3486 author = "K. Nordlund",
3491 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3493 author = "Arthur F. Voter",
3494 journal = "Phys. Rev. Lett.",
3497 pages = "3908--3911",
3501 doi = "10.1103/PhysRevLett.78.3908",
3502 publisher = "American Physical Society",
3503 notes = "hyperdynamics, accelerated md",
3507 author = "Arthur F. Voter",
3509 title = "A method for accelerating the molecular dynamics
3510 simulation of infrequent events",
3513 journal = "J. Chem. Phys.",
3516 pages = "4665--4677",
3517 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3518 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3519 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3520 energy functions; surface diffusion; reaction kinetics
3521 theory; potential energy surfaces",
3522 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3523 doi = "10.1063/1.473503",
3524 notes = "improved hyperdynamics md",
3527 @Article{sorensen2000,
3528 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3530 title = "Temperature-accelerated dynamics for simulation of
3534 journal = "J. Chem. Phys.",
3537 pages = "9599--9606",
3538 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3539 MOLECULAR DYNAMICS METHOD; surface diffusion",
3540 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3541 doi = "10.1063/1.481576",
3542 notes = "temperature accelerated dynamics, tad",
3546 title = "Parallel replica method for dynamics of infrequent
3548 author = "Arthur F. Voter",
3549 journal = "Phys. Rev. B",
3552 pages = "R13985--R13988",
3556 doi = "10.1103/PhysRevB.57.R13985",
3557 publisher = "American Physical Society",
3558 notes = "parallel replica method, accelerated md",
3562 author = "Xiongwu Wu and Shaomeng Wang",
3564 title = "Enhancing systematic motion in molecular dynamics
3568 journal = "J. Chem. Phys.",
3571 pages = "9401--9410",
3572 keywords = "molecular dynamics method; argon; Lennard-Jones
3573 potential; crystallisation; liquid theory",
3574 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3575 doi = "10.1063/1.478948",
3576 notes = "self guided md, sgmd, accelerated md, enhancing
3580 @Article{choudhary05,
3581 author = "Devashish Choudhary and Paulette Clancy",
3583 title = "Application of accelerated molecular dynamics schemes
3584 to the production of amorphous silicon",
3587 journal = "J. Chem. Phys.",
3593 keywords = "molecular dynamics method; silicon; glass structure;
3594 amorphous semiconductors",
3595 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3596 doi = "10.1063/1.1878733",
3597 notes = "explanation of sgmd and hyper md, applied to amorphous
3602 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3604 title = "Carbon precipitation in silicon: Why is it so
3608 journal = "Appl. Phys. Lett.",
3611 pages = "3336--3338",
3612 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3613 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3615 URL = "http://link.aip.org/link/?APL/62/3336/1",
3616 doi = "10.1063/1.109063",
3617 notes = "interfacial energy of cubic sic and si, si self
3618 interstitials necessary for precipitation, volume
3619 decrease, high interface energy",
3622 @Article{chaussende08,
3623 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3624 journal = "J. Cryst. Growth",
3629 note = "Proceedings of the E-MRS Conference, Symposium G -
3630 Substrates of Wide Bandgap Materials",
3632 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3633 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3634 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3635 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3636 and A. Andreadou and E. K. Polychroniadis and C.
3637 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3638 notes = "3c-sic crystal growth, sic fabrication + links,
3642 @Article{chaussende07,
3643 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3644 title = "Status of Si{C} bulk growth processes",
3645 journal = "J. Phys. D",
3649 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3651 notes = "review of sic single crystal growth methods, process
3656 title = "Forces in Molecules",
3657 author = "R. P. Feynman",
3658 journal = "Phys. Rev.",
3665 doi = "10.1103/PhysRev.56.340",
3666 publisher = "American Physical Society",
3667 notes = "hellmann feynman forces",
3671 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3672 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3673 their Contrasting Properties",
3674 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3676 journal = "Phys. Rev. Lett.",
3683 doi = "10.1103/PhysRevLett.84.943",
3684 publisher = "American Physical Society",
3685 notes = "si sio2 and sic sio2 interface",
3688 @Article{djurabekova08,
3689 title = "Atomistic simulation of the interface structure of Si
3690 nanocrystals embedded in amorphous silica",
3691 author = "Flyura Djurabekova and Kai Nordlund",
3692 journal = "Phys. Rev. B",
3699 doi = "10.1103/PhysRevB.77.115325",
3700 publisher = "American Physical Society",
3701 notes = "nc-si in sio2, interface energy, nc construction,
3702 angular distribution, coordination",
3706 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3707 W. Liang and J. Zou",
3709 title = "Nature of interfacial defects and their roles in
3710 strain relaxation at highly lattice mismatched
3711 3{C}-Si{C}/Si (001) interface",
3714 journal = "J. Appl. Phys.",
3720 keywords = "anelastic relaxation; crystal structure; dislocations;
3721 elemental semiconductors; semiconductor growth;
3722 semiconductor thin films; silicon; silicon compounds;
3723 stacking faults; wide band gap semiconductors",
3724 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3725 doi = "10.1063/1.3234380",
3726 notes = "sic/si interface, follow refs, tem image
3727 deconvolution, dislocation defects",
3730 @Article{kitabatake93,
3731 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3734 title = "Simulations and experiments of Si{C} heteroepitaxial
3735 growth on Si(001) surface",
3738 journal = "J. Appl. Phys.",
3741 pages = "4438--4445",
3742 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3743 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3744 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3745 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3746 doi = "10.1063/1.354385",
3747 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3751 @Article{kitabatake97,
3752 author = "Makoto Kitabatake",
3753 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3754 Heteroepitaxial Growth",
3755 publisher = "WILEY-VCH Verlag",
3757 journal = "phys. status solidi (b)",
3760 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3761 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3762 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3766 title = "Strain relaxation and thermal stability of the
3767 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3769 journal = "Thin Solid Films",
3776 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3777 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3778 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3779 keywords = "Strain relaxation",
3780 keywords = "Interfaces",
3781 keywords = "Thermal stability",
3782 keywords = "Molecular dynamics",
3783 notes = "tersoff sic/si interface study",
3787 title = "Ab initio Study of Misfit Dislocations at the
3788 $Si{C}/Si(001)$ Interface",
3789 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3791 journal = "Phys. Rev. Lett.",
3798 doi = "10.1103/PhysRevLett.89.156101",
3799 publisher = "American Physical Society",
3800 notes = "sic/si interface study",
3803 @Article{pizzagalli03,
3804 title = "Theoretical investigations of a highly mismatched
3805 interface: Si{C}/Si(001)",
3806 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3808 journal = "Phys. Rev. B",
3815 doi = "10.1103/PhysRevB.68.195302",
3816 publisher = "American Physical Society",
3817 notes = "tersoff md and ab initio sic/si interface study",
3821 title = "Atomic configurations of dislocation core and twin
3822 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3823 electron microscopy",
3824 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3825 H. Zheng and J. W. Liang",
3826 journal = "Phys. Rev. B",
3833 doi = "10.1103/PhysRevB.75.184103",
3834 publisher = "American Physical Society",
3835 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3839 @Article{hornstra58,
3840 title = "Dislocations in the diamond lattice",
3841 journal = "J. Phys. Chem. Solids",
3848 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3849 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3850 author = "J. Hornstra",
3851 notes = "dislocations in diamond lattice",
3855 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3856 Ion `Hot' Implantation",
3857 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3858 Hirao and Naoki Arai and Tomio Izumi",
3859 journal = "Japanese J. Appl. Phys.",
3861 number = "Part 1, No. 2A",
3865 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3866 doi = "10.1143/JJAP.31.343",
3867 publisher = "The Japan Society of Applied Physics",
3868 notes = "c-c bonds in c implanted si, hot implantation
3869 efficiency, c-c hard to break by thermal annealing",
3872 @Article{eichhorn99,
3873 author = "F. Eichhorn and N. Schell and W. Matz and R.
3876 title = "Strain and Si{C} particle formation in silicon
3877 implanted with carbon ions of medium fluence studied by
3878 synchrotron x-ray diffraction",
3881 journal = "J. Appl. Phys.",
3884 pages = "4184--4187",
3885 keywords = "silicon; carbon; elemental semiconductors; chemical
3886 interdiffusion; ion implantation; X-ray diffraction;
3887 precipitation; semiconductor doping",
3888 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3889 doi = "10.1063/1.371344",
3890 notes = "sic conversion by ibs, detected substitutional carbon,
3891 expansion of si lattice",
3894 @Article{eichhorn02,
3895 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3896 Metzger and W. Matz and R. K{\"{o}}gler",
3898 title = "Structural relation between Si and Si{C} formed by
3899 carbon ion implantation",
3902 journal = "J. Appl. Phys.",
3905 pages = "1287--1292",
3906 keywords = "silicon compounds; wide band gap semiconductors; ion
3907 implantation; annealing; X-ray scattering; transmission
3908 electron microscopy",
3909 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3910 doi = "10.1063/1.1428105",
3911 notes = "3c-sic alignement to si host in ibs depending on
3912 temperature, might explain c into c sub trafo",
3916 author = "G Lucas and M Bertolus and L Pizzagalli",
3917 title = "An environment-dependent interatomic potential for
3918 silicon carbide: calculation of bulk properties,
3919 high-pressure phases, point and extended defects, and
3920 amorphous structures",
3921 journal = "J. Phys.: Condens. Matter",
3925 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3931 author = "J Godet and L Pizzagalli and S Brochard and P
3933 title = "Comparison between classical potentials and ab initio
3934 methods for silicon under large shear",
3935 journal = "J. Phys.: Condens. Matter",
3939 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3941 notes = "comparison of empirical potentials, stillinger weber,
3942 edip, tersoff, ab initio",
3945 @Article{moriguchi98,
3946 title = "Verification of Tersoff's Potential for Static
3947 Structural Analysis of Solids of Group-{IV} Elements",
3948 author = "Koji Moriguchi and Akira Shintani",
3949 journal = "Japanese J. Appl. Phys.",
3951 number = "Part 1, No. 2",
3955 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3956 doi = "10.1143/JJAP.37.414",
3957 publisher = "The Japan Society of Applied Physics",
3958 notes = "tersoff stringent test",
3961 @Article{mazzarolo01,
3962 title = "Low-energy recoils in crystalline silicon: Quantum
3964 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3965 Lulli and Eros Albertazzi",
3966 journal = "Phys. Rev. B",
3973 doi = "10.1103/PhysRevB.63.195207",
3974 publisher = "American Physical Society",
3977 @Article{holmstroem08,
3978 title = "Threshold defect production in silicon determined by
3979 density functional theory molecular dynamics
3981 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3982 journal = "Phys. Rev. B",
3989 doi = "10.1103/PhysRevB.78.045202",
3990 publisher = "American Physical Society",
3991 notes = "threshold displacement comparison empirical and ab
3995 @Article{nordlund97,
3996 title = "Repulsive interatomic potentials calculated using
3997 Hartree-Fock and density-functional theory methods",
3998 journal = "Nucl. Instrum. Methods Phys. Res. B",
4005 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
4006 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
4007 author = "K. Nordlund and N. Runeberg and D. Sundholm",
4008 notes = "repulsive ab initio potential",
4012 title = "Efficiency of ab-initio total energy calculations for
4013 metals and semiconductors using a plane-wave basis
4015 journal = "Comput. Mater. Sci.",
4022 doi = "DOI: 10.1016/0927-0256(96)00008-0",
4023 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
4024 author = "G. Kresse and J. Furthm{\"{u}}ller",
4029 title = "Projector augmented-wave method",
4030 author = "P. E. Bl{\"o}chl",
4031 journal = "Phys. Rev. B",
4034 pages = "17953--17979",
4038 doi = "10.1103/PhysRevB.50.17953",
4039 publisher = "American Physical Society",
4040 notes = "paw method",
4043 @InCollection{cohen70,
4044 title = "The Fitting of Pseudopotentials to Experimental Data
4045 and Their Subsequent Application",
4046 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4047 publisher = "Academic Press",
4051 series = "Solid State Physics",
4053 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4054 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4055 author = "Marvin L. Cohen and Volker Heine",
4059 title = "Norm-Conserving Pseudopotentials",
4060 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4061 journal = "Phys. Rev. Lett.",
4064 pages = "1494--1497",
4068 doi = "10.1103/PhysRevLett.43.1494",
4069 publisher = "American Physical Society",
4070 notes = "norm-conserving pseudopotentials",
4073 @Article{troullier91,
4074 title = "Efficient pseudopotentials for plane-wave
4076 author = "N. Troullier and Jos\'e Luriaas Martins",
4077 journal = "Phys. Rev. B",
4080 pages = "1993--2006",
4084 doi = "10.1103/PhysRevB.43.1993",
4085 publisher = "American Physical Society",
4088 @Article{vanderbilt90,
4089 title = "Soft self-consistent pseudopotentials in a generalized
4090 eigenvalue formalism",
4091 author = "David Vanderbilt",
4092 journal = "Phys. Rev. B",
4095 pages = "7892--7895",
4099 doi = "10.1103/PhysRevB.41.7892",
4100 publisher = "American Physical Society",
4101 notes = "vasp pseudopotentials",
4104 @Article{ceperley80,
4105 title = "Ground State of the Electron Gas by a Stochastic
4107 author = "D. M. Ceperley and B. J. Alder",
4108 journal = "Phys. Rev. Lett.",
4115 doi = "10.1103/PhysRevLett.45.566",
4116 publisher = "American Physical Society",
4120 title = "Self-interaction correction to density-functional
4121 approximations for many-electron systems",
4122 author = "J. P. Perdew and Alex Zunger",
4123 journal = "Phys. Rev. B",
4126 pages = "5048--5079",
4130 doi = "10.1103/PhysRevB.23.5048",
4131 publisher = "American Physical Society",
4135 title = "Accurate and simple density functional for the
4136 electronic exchange energy: Generalized gradient
4138 author = "John P. Perdew and Yue Wang",
4139 journal = "Phys. Rev. B",
4142 pages = "8800--8802",
4146 doi = "10.1103/PhysRevB.33.8800",
4147 publisher = "American Physical Society",
4148 notes = "rapid communication gga",
4152 title = "Generalized gradient approximations for exchange and
4153 correlation: {A} look backward and forward",
4154 journal = "Physica B",
4161 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4162 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4163 author = "John P. Perdew",
4164 notes = "gga overview",
4168 title = "Atoms, molecules, solids, and surfaces: Applications
4169 of the generalized gradient approximation for exchange
4171 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4172 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4173 and Carlos Fiolhais",
4174 journal = "Phys. Rev. B",
4177 pages = "6671--6687",
4181 doi = "10.1103/PhysRevB.46.6671",
4182 publisher = "American Physical Society",
4183 notes = "gga pw91 (as in vasp)",
4187 title = "Special Points in the Brillouin Zone",
4188 author = "D. J. Chadi and Marvin L. Cohen",
4189 journal = "Phys. Rev. B",
4192 pages = "5747--5753",
4196 doi = "10.1103/PhysRevB.8.5747",
4197 publisher = "American Physical Society",
4200 @Article{baldereschi73,
4201 title = "Mean-Value Point in the Brillouin Zone",
4202 author = "A. Baldereschi",
4203 journal = "Phys. Rev. B",
4206 pages = "5212--5215",
4210 doi = "10.1103/PhysRevB.7.5212",
4211 publisher = "American Physical Society",
4212 notes = "mean value k point",
4215 @Article{monkhorst76,
4216 title = "Special points for Brillouin-zone integrations",
4217 author = "Hendrik J. Monkhorst and James D. Pack",
4218 journal = "Phys. Rev. B",
4221 pages = "5188--5192",
4225 doi = "10.1103/PhysRevB.13.5188",
4226 publisher = "American Physical Society",
4230 title = "Ab initio pseudopotential calculations of dopant
4232 journal = "Comput. Mater. Sci.",
4239 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4240 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4241 author = "Jing Zhu",
4242 keywords = "TED (transient enhanced diffusion)",
4243 keywords = "Boron dopant",
4244 keywords = "Carbon dopant",
4245 keywords = "Defect",
4246 keywords = "ab initio pseudopotential method",
4247 keywords = "Impurity cluster",
4248 notes = "binding of c to si interstitial, c in si defects",
4252 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4254 title = "Si{C} buried layer formation by ion beam synthesis at
4258 journal = "Appl. Phys. Lett.",
4261 pages = "2646--2648",
4262 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4263 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4264 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4265 ELECTRON MICROSCOPY",
4266 URL = "http://link.aip.org/link/?APL/66/2646/1",
4267 doi = "10.1063/1.113112",
4268 notes = "precipitation mechanism by substitutional carbon, si
4269 self interstitials react with further implanted c",
4273 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4274 Kolodzey and A. Hairie",
4276 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4280 journal = "J. Appl. Phys.",
4283 pages = "4631--4633",
4284 keywords = "silicon compounds; precipitation; localised modes;
4285 semiconductor epitaxial layers; infrared spectra;
4286 Fourier transform spectra; thermal stability;
4288 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4289 doi = "10.1063/1.368703",
4290 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4294 author = "R Jones and B J Coomer and P R Briddon",
4295 title = "Quantum mechanical modelling of defects in
4297 journal = "J. Phys.: Condens. Matter",
4301 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4303 notes = "ab inito dft intro, vibrational modes, c defect in
4308 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4309 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4310 J. E. Greene and S. G. Bishop",
4312 title = "Carbon incorporation pathways and lattice sites in
4313 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4314 molecular-beam epitaxy",
4317 journal = "J. Appl. Phys.",
4320 pages = "5716--5727",
4321 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4322 doi = "10.1063/1.1465122",
4323 notes = "c substitutional incorporation pathway, dft and expt",
4327 title = "Dynamic properties of interstitial carbon and
4328 carbon-carbon pair defects in silicon",
4329 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4331 journal = "Phys. Rev. B",
4334 pages = "2188--2194",
4338 doi = "10.1103/PhysRevB.55.2188",
4339 publisher = "American Physical Society",
4340 notes = "ab initio c in si and di-carbon defect, no formation
4341 energies, different migration barriers and paths",
4345 title = "Interstitial carbon and the carbon-carbon pair in
4346 silicon: Semiempirical electronic-structure
4348 author = "Matthew J. Burnard and Gary G. DeLeo",
4349 journal = "Phys. Rev. B",
4352 pages = "10217--10225",
4356 doi = "10.1103/PhysRevB.47.10217",
4357 publisher = "American Physical Society",
4358 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4359 carbon defect, formation energies",
4363 title = "Electronic structure of interstitial carbon in
4365 author = "Morgan Besson and Gary G. DeLeo",
4366 journal = "Phys. Rev. B",
4369 pages = "4028--4033",
4373 doi = "10.1103/PhysRevB.43.4028",
4374 publisher = "American Physical Society",
4378 title = "Review of atomistic simulations of surface diffusion
4379 and growth on semiconductors",
4380 journal = "Comput. Mater. Sci.",
4385 note = "Proceedings of the Workshop on Virtual Molecular Beam
4388 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4389 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4390 author = "Efthimios Kaxiras",
4391 notes = "might contain c 100 db formation energy, overview md,
4392 tight binding, first principles",
4395 @Article{kaukonen98,
4396 title = "Effect of {N} and {B} doping on the growth of {CVD}
4398 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4400 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4401 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4403 journal = "Phys. Rev. B",
4406 pages = "9965--9970",
4410 doi = "10.1103/PhysRevB.57.9965",
4411 publisher = "American Physical Society",
4412 notes = "constrained conjugate gradient relaxation technique
4417 title = "Correlation between the antisite pair and the ${DI}$
4419 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4420 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4422 journal = "Phys. Rev. B",
4429 doi = "10.1103/PhysRevB.67.155203",
4430 publisher = "American Physical Society",
4434 title = "Production and recovery of defects in Si{C} after
4435 irradiation and deformation",
4436 journal = "J. Nucl. Mater.",
4439 pages = "1803--1808",
4443 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4444 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4445 author = "J. Chen and P. Jung and H. Klein",
4449 title = "Accumulation, dynamic annealing and thermal recovery
4450 of ion-beam-induced disorder in silicon carbide",
4451 journal = "Nucl. Instrum. Methods Phys. Res. B",
4458 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4459 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4460 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4463 @Article{bockstedte03,
4464 title = "Ab initio study of the migration of intrinsic defects
4466 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4468 journal = "Phys. Rev. B",
4475 doi = "10.1103/PhysRevB.68.205201",
4476 publisher = "American Physical Society",
4477 notes = "defect migration in sic",
4481 title = "Theoretical study of vacancy diffusion and
4482 vacancy-assisted clustering of antisites in Si{C}",
4483 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4485 journal = "Phys. Rev. B",
4492 doi = "10.1103/PhysRevB.68.155208",
4493 publisher = "American Physical Society",
4497 journal = "Telegrafiya i Telefoniya bez Provodov",
4501 author = "O. V. Lossev",
4505 title = "Luminous carborundum detector and detection effect and
4506 oscillations with crystals",
4507 journal = "Philos. Mag. Series 7",
4510 pages = "1024--1044",
4512 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4513 author = "O. V. Lossev",
4517 journal = "Physik. Zeitschr.",
4521 author = "O. V. Lossev",
4525 journal = "Physik. Zeitschr.",
4529 author = "O. V. Lossev",
4533 journal = "Physik. Zeitschr.",
4537 author = "O. V. Lossev",
4541 title = "A note on carborundum",
4542 journal = "Electrical World",
4546 author = "H. J. Round",
4549 @Article{vashishath08,
4550 title = "Recent trends in silicon carbide device research",
4551 journal = "Mj. Int. J. Sci. Tech.",
4556 author = "Munish Vashishath and Ashoke K. Chatterjee",
4557 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4558 notes = "sic polytype electronic properties",
4562 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4564 title = "Growth and Properties of beta-Si{C} Single Crystals",
4567 journal = "J. Appl. Phys.",
4571 URL = "http://link.aip.org/link/?JAP/37/333/1",
4572 doi = "10.1063/1.1707837",
4573 notes = "sic melt growth",
4577 author = "A. E. van Arkel and J. H. de Boer",
4578 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4580 publisher = "WILEY-VCH Verlag GmbH",
4582 journal = "Z. Anorg. Chem.",
4585 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4586 doi = "10.1002/zaac.19251480133",
4587 notes = "van arkel apparatus",
4591 author = "K. Moers",
4593 journal = "Z. Anorg. Chem.",
4596 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4601 author = "J. T. Kendall",
4602 title = "Electronic Conduction in Silicon Carbide",
4605 journal = "J. Chem. Phys.",
4609 URL = "http://link.aip.org/link/?JCP/21/821/1",
4610 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4615 author = "J. A. Lely",
4617 journal = "Ber. Deut. Keram. Ges.",
4620 notes = "lely sublimation growth process",
4623 @Article{knippenberg63,
4624 author = "W. F. Knippenberg",
4626 journal = "Philips Res. Repts.",
4629 notes = "acheson process",
4632 @Article{hoffmann82,
4633 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4636 title = "Silicon carbide blue light emitting diodes with
4637 improved external quantum efficiency",
4640 journal = "J. Appl. Phys.",
4643 pages = "6962--6967",
4644 keywords = "light emitting diodes; silicon carbides; quantum
4645 efficiency; visible radiation; experimental data;
4646 epitaxy; fabrication; medium temperature; layers;
4647 aluminium; nitrogen; substrates; pn junctions;
4648 electroluminescence; spectra; current density;
4650 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4651 doi = "10.1063/1.330041",
4652 notes = "blue led, sublimation process",
4656 author = "Philip Neudeck",
4657 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4658 Road 44135 Cleveland OH",
4659 title = "Progress in silicon carbide semiconductor electronics
4661 journal = "Journal of Electronic Materials",
4662 publisher = "Springer Boston",
4664 keyword = "Chemistry and Materials Science",
4668 URL = "http://dx.doi.org/10.1007/BF02659688",
4669 note = "10.1007/BF02659688",
4671 notes = "sic data, advantages of 3c sic",
4674 @InProceedings{pribble02,
4675 author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
4676 R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
4677 and J. J. Sumakeris and A. W. Saxler and J. W.
4679 booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S
4681 title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
4682 power amplifier design",
4687 pages = "1819--1822",
4688 doi = "10.1109/MWSYM.2002.1012216",
4693 @InProceedings{temcamani01,
4694 author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
4695 Brylinski and P. Bannelier and B. Darges and J. P.
4697 booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S
4699 title = "Silicon carbide {MESFET}s performances and application
4700 in broadcast power amplifiers",
4706 doi = "10.1109/MWSYM.2001.966976",
4712 author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
4713 and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
4714 Kimoto and Hiroyuki Matsunami",
4715 title = "Traps at the Si{C}/Si{O2}-Interface",
4716 journal = "MRS Online Proceedings Library",
4721 doi = "10.1557/PROC-640-H3.2",
4722 URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
4723 eprint = "http://journals.cambridge.org/article_S1946427400647061",
4726 @Article{bhatnagar93,
4727 author = "M. Bhatnagar and B. J. Baliga",
4728 journal = "Electron Devices, IEEE Transactions on",
4729 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4736 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4737 rectifiers;Si;SiC;breakdown voltages;drift region
4738 properties;output characteristics;power MOSFETs;power
4739 semiconductor devices;switching characteristics;thermal
4740 analysis;Schottky-barrier diodes;electric breakdown of
4741 solids;insulated gate field effect transistors;power
4742 transistors;semiconductor materials;silicon;silicon
4743 compounds;solid-state rectifiers;thermal analysis;",
4744 doi = "10.1109/16.199372",
4746 notes = "comparison 3c 6h sic and si devices",
4750 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4751 A. Powell and C. S. Salupo and L. G. Matus",
4752 journal = "Electron Devices, IEEE Transactions on",
4753 title = "Electrical properties of epitaxial 3{C}- and
4754 6{H}-Si{C} p-n junction diodes produced side-by-side on
4755 6{H}-Si{C} substrates",
4761 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4762 C;6H-SiC layers;6H-SiC substrates;CVD
4763 process;SiC;chemical vapor deposition;doping;electrical
4764 properties;epitaxial layers;light
4765 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4766 diodes;polytype;rectification characteristics;reverse
4767 leakage current;reverse voltages;temperature;leakage
4768 currents;power electronics;semiconductor
4769 diodes;semiconductor epitaxial layers;semiconductor
4770 growth;semiconductor materials;silicon
4771 compounds;solid-state rectifiers;substrates;vapour
4772 phase epitaxial growth;",
4773 doi = "10.1109/16.285038",
4775 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4780 author = "N. Schulze and D. L. Barrett and G. Pensl",
4782 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4783 single crystals by physical vapor transport",
4786 journal = "Appl. Phys. Lett.",
4789 pages = "1632--1634",
4790 keywords = "silicon compounds; semiconductor materials;
4791 semiconductor growth; crystal growth from vapour;
4792 photoluminescence; Hall mobility",
4793 URL = "http://link.aip.org/link/?APL/72/1632/1",
4794 doi = "10.1063/1.121136",
4795 notes = "micropipe free 6h-sic pvt growth",
4799 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4801 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4804 journal = "Appl. Phys. Lett.",
4808 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4809 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4810 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4811 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4813 URL = "http://link.aip.org/link/?APL/50/221/1",
4814 doi = "10.1063/1.97667",
4815 notes = "apb 3c-sic heteroepitaxy on si",
4818 @Article{shibahara86,
4819 title = "Surface morphology of cubic Si{C}(100) grown on
4820 Si(100) by chemical vapor deposition",
4821 journal = "J. Cryst. Growth",
4828 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4829 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4830 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4832 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4835 @Article{desjardins96,
4836 author = "P. Desjardins and J. E. Greene",
4838 title = "Step-flow epitaxial growth on two-domain surfaces",
4841 journal = "J. Appl. Phys.",
4844 pages = "1423--1434",
4845 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4846 FILM GROWTH; SURFACE STRUCTURE",
4847 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4848 doi = "10.1063/1.360980",
4849 notes = "apb model",
4853 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4855 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4856 carbonization of silicon",
4859 journal = "J. Appl. Phys.",
4862 pages = "2070--2073",
4863 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4864 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4866 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4867 doi = "10.1063/1.360184",
4868 notes = "ssmbe of sic on si, lower temperatures",
4872 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4873 {MBE} using surface superstructure",
4874 journal = "J. Cryst. Growth",
4881 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4882 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4883 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4884 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4885 notes = "gas source mbe of 3c-sic on 6h-sic",
4888 @Article{yoshinobu92,
4889 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4890 and Takashi Fuyuki and Hiroyuki Matsunami",
4892 title = "Lattice-matched epitaxial growth of single crystalline
4893 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4894 molecular beam epitaxy",
4897 journal = "Appl. Phys. Lett.",
4901 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4902 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4903 INTERFACE STRUCTURE",
4904 URL = "http://link.aip.org/link/?APL/60/824/1",
4905 doi = "10.1063/1.107430",
4906 notes = "gas source mbe of 3c-sic on 6h-sic",
4909 @Article{yoshinobu90,
4910 title = "Atomic level control in gas source {MBE} growth of
4912 journal = "J. Cryst. Growth",
4919 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4920 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4921 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4922 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4923 notes = "gas source mbe of 3c-sic on 3c-sic",
4927 title = "Atomic layer epitaxy controlled by surface
4928 superstructures in Si{C}",
4929 journal = "Thin Solid Films",
4936 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4937 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4938 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4940 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4945 title = "Microscopic mechanisms of accurate layer-by-layer
4946 growth of [beta]-Si{C}",
4947 journal = "Thin Solid Films",
4954 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4955 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4956 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4957 and S. Misawa and E. Sakuma and S. Yoshida",
4958 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4963 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4965 title = "Effects of gas flow ratio on silicon carbide thin film
4966 growth mode and polytype formation during gas-source
4967 molecular beam epitaxy",
4970 journal = "Appl. Phys. Lett.",
4973 pages = "2851--2853",
4974 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4975 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4976 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4978 URL = "http://link.aip.org/link/?APL/65/2851/1",
4979 doi = "10.1063/1.112513",
4980 notes = "gas source mbe of 6h-sic on 6h-sic",
4984 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4985 title = "Heterointerface Control and Epitaxial Growth of
4986 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4987 publisher = "WILEY-VCH Verlag",
4989 journal = "phys. status solidi (b)",
4992 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4997 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4998 journal = "J. Cryst. Growth",
5005 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
5006 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
5007 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
5008 keywords = "Reflection high-energy electron diffraction (RHEED)",
5009 keywords = "Scanning electron microscopy (SEM)",
5010 keywords = "Silicon carbide",
5011 keywords = "Silicon",
5012 keywords = "Island growth",
5013 notes = "lower temperature, 550-700",
5016 @Article{hatayama95,
5017 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
5018 on Si using hydrocarbon radicals by gas source
5019 molecular beam epitaxy",
5020 journal = "J. Cryst. Growth",
5027 doi = "DOI: 10.1016/0022-0248(95)80077-P",
5028 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
5029 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
5030 and Hiroyuki Matsunami",
5034 author = "Volker Heine and Ching Cheng and Richard J. Needs",
5035 title = "The Preference of Silicon Carbide for Growth in the
5036 Metastable Cubic Form",
5037 journal = "J. Am. Ceram. Soc.",
5040 publisher = "Blackwell Publishing Ltd",
5042 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
5043 doi = "10.1111/j.1151-2916.1991.tb06811.x",
5044 pages = "2630--2633",
5045 keywords = "silicon carbide, crystal growth, crystal structure,
5046 calculations, stability",
5048 notes = "3c-sic metastable, 3c-sic preferred growth, sic
5049 polytype dft calculation refs",
5052 @Article{allendorf91,
5053 title = "The adsorption of {H}-atoms on polycrystalline
5054 [beta]-silicon carbide",
5055 journal = "Surf. Sci.",
5062 doi = "DOI: 10.1016/0039-6028(91)90912-C",
5063 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
5064 author = "Mark D. Allendorf and Duane A. Outka",
5065 notes = "h adsorption on 3c-sic",
5068 @Article{eaglesham93,
5069 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
5070 D. P. Adams and S. M. Yalisove",
5072 title = "Effect of {H} on Si molecular-beam epitaxy",
5075 journal = "J. Appl. Phys.",
5078 pages = "6615--6618",
5079 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
5080 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
5081 DIFFUSION; ADSORPTION",
5082 URL = "http://link.aip.org/link/?JAP/74/6615/1",
5083 doi = "10.1063/1.355101",
5084 notes = "h incorporation on si surface, lower surface
5089 author = "Ronald C. Newman",
5090 title = "Carbon in Crystalline Silicon",
5091 journal = "MRS Proc.",
5096 doi = "10.1557/PROC-59-403",
5097 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5098 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5102 title = "The diffusivity of carbon in silicon",
5103 journal = "J. Phys. Chem. Solids",
5110 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5111 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5112 author = "R. C. Newman and J. Wakefield",
5113 notes = "diffusivity of substitutional c in si",
5117 author = "U. Gösele",
5118 title = "The Role of Carbon and Point Defects in Silicon",
5119 journal = "MRS Proc.",
5124 doi = "10.1557/PROC-59-419",
5125 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5126 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5129 @Article{mukashev82,
5130 title = "Defects in Carbon-Implanted Silicon",
5131 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5132 Fukuoka and Haruo Saito",
5133 journal = "Japanese J. Appl. Phys.",
5135 number = "Part 1, No. 2",
5139 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5140 doi = "10.1143/JJAP.21.399",
5141 publisher = "The Japan Society of Applied Physics",
5145 title = "Convergence of supercell calculations for point
5146 defects in semiconductors: Vacancy in silicon",
5147 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5149 journal = "Phys. Rev. B",
5152 pages = "1318--1325",
5156 doi = "10.1103/PhysRevB.58.1318",
5157 publisher = "American Physical Society",
5158 notes = "convergence k point supercell size, vacancy in
5163 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5164 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5165 K{\"{o}}gler and W. Skorupa",
5167 title = "Spectroscopic characterization of phases formed by
5168 high-dose carbon ion implantation in silicon",
5171 journal = "J. Appl. Phys.",
5174 pages = "2978--2984",
5175 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5176 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5177 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5178 DEPENDENCE; PRECIPITATES; ANNEALING",
5179 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5180 doi = "10.1063/1.358714",
5183 @Article{romano-rodriguez96,
5184 title = "Detailed analysis of [beta]-Si{C} formation by high
5185 dose carbon ion implantation in silicon",
5186 journal = "Materials Science and Engineering B",
5191 note = "European Materials Research Society 1995 Spring
5192 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5193 Oxygen in Silicon and in Other Elemental
5196 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5197 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5198 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5199 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5201 keywords = "Silicon",
5202 keywords = "Ion implantation",
5203 notes = "incoherent 3c-sic precipitate",
5206 @Article{davidson75,
5207 title = "The iterative calculation of a few of the lowest
5208 eigenvalues and corresponding eigenvectors of large
5209 real-symmetric matrices",
5210 journal = "J. Comput. Phys.",
5217 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5218 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5219 author = "Ernest R. Davidson",
5223 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5225 author = "T. W. Adorno",
5226 ISBN = "978-3-518-01236-9",
5227 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5229 publisher = "Suhrkamp",
5232 @Misc{attenberger03,
5233 author = "Wilfried Attenberger and Jörg Lindner and Bernd
5235 title = "A {method} {for} {forming} {a} {layered}
5236 {semiconductor} {structure} {and} {corresponding}
5241 note = "WO 2003/034484 A3R4",
5243 howpublished = "Patent Application",
5245 URL = "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
5246 filing_num = "EP0211423",
5251 ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
5252 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
5253 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
5255 abstract = "The following invention provides a method for forming
5256 a layered semiconductor structure having a layer (5) of
5257 a first semiconductor material on a substrate (1; 1')
5258 of at least one second semiconductor material,
5259 comprising the steps of: providing said substrate (1;
5260 1'); burying said layer (5) of said first semiconductor
5261 material in said substrate (1; 1'), said buried layer
5262 (5) having an upper surface (105) and a lower surface
5263 (105) and dividing said substrate (1; 1') into an upper
5264 part (1a) and a lower part (1b; 1b', 1c); creating a
5265 buried damage layer (10; 10'; 10'', 100'') which at
5266 least partly adjoins and/or at least partly includes
5267 said upper surface (105) of said buried layer (5); and
5268 removing said upper part (1a) of said substrate (1; 1')
5269 and said buried damage layer (10; 10'; 10'', 100'') for
5270 exposing said buried layer (5). The invention also
5271 provides a corresponding layered semiconductor