2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 title = "Combined ab initio and classical potential simulation
1539 study on the silicon carbide precipitation in silicon",
1540 journal = "accepted for publication in Phys. Rev. B",
1545 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1546 K. N. Lindner and W. G. Schmidt and E. Rauls",
1547 abstract = "Atomistic simulations on the silicon carbide
1548 precipitation in bulk silicon employing both, classical
1549 potential and first-principles methods are presented.
1550 The calculations aim at a comprehensive, microscopic
1551 understanding of the precipitation mechanism in the
1552 context of controversial discussions in the literature.
1553 For the quantum-mechanical treatment, basic processes
1554 assumed in the precipitation process are calculated in
1555 feasible systems of small size. The migration mechanism
1556 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1557 1 0> self-interstitial in otherwise defect-free silicon
1558 are investigated using density functional theory
1559 calculations. The influence of a nearby vacancy,
1560 another carbon interstitial and a substitutional defect
1561 as well as a silicon self-interstitial has been
1562 investigated systematically. Interactions of various
1563 combinations of defects have been characterized
1564 including a couple of selected migration pathways
1565 within these configurations. Almost all of the
1566 investigated pairs of defects tend to agglomerate
1567 allowing for a reduction in strain. The formation of
1568 structures involving strong carbon-carbon bonds turns
1569 out to be very unlikely. In contrast, substitutional
1570 carbon occurs in all probability. A long range capture
1571 radius has been observed for pairs of interstitial
1572 carbon as well as interstitial carbon and vacancies. A
1573 rather small capture radius is predicted for
1574 substitutional carbon and silicon self-interstitials.
1575 Initial assumptions regarding the precipitation
1576 mechanism of silicon carbide in bulk silicon are
1577 established and conformability to experimental findings
1578 is discussed. Furthermore, results of the accurate
1579 first-principles calculations on defects and carbon
1580 diffusion in silicon are compared to results of
1581 classical potential simulations revealing significant
1582 limitations of the latter method. An approach to work
1583 around this problem is proposed. Finally, results of
1584 the classical potential molecular dynamics simulations
1585 of large systems are examined, which reinforce previous
1586 assumptions and give further insight into basic
1587 processes involved in the silicon carbide transition.",
1591 author = "J. K. N. Lindner and A. Frohnwieser and B.
1592 Rauschenbach and B. Stritzker",
1593 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1595 journal = "MRS Proc.",
1600 doi = "10.1557/PROC-354-171",
1601 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1602 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1603 notes = "first time ibs at moderate temperatures",
1607 title = "Formation of buried epitaxial silicon carbide layers
1608 in silicon by ion beam synthesis",
1609 journal = "Mater. Chem. Phys.",
1616 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1617 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1618 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1619 Götz and A. Frohnwieser and B. Rauschenbach and B.
1621 notes = "dose window",
1624 @Article{calcagno96,
1625 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1627 journal = "Nucl. Instrum. Methods Phys. Res. B",
1632 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1633 New Trends in Ion Beam Processing of Materials",
1635 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1636 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1637 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1638 Grimaldi and P. Musumeci",
1639 notes = "dose window, graphitic bonds",
1643 title = "Mechanisms of Si{C} Formation in the Ion Beam
1644 Synthesis of 3{C}-Si{C} Layers in Silicon",
1645 journal = "Mater. Sci. Forum",
1650 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1651 URL = "http://www.scientific.net/MSF.264-268.215",
1652 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1653 notes = "intermediate temperature for sharp interface + good
1658 title = "Controlling the density distribution of Si{C}
1659 nanocrystals for the ion beam synthesis of buried Si{C}
1661 journal = "Nucl. Instrum. Methods Phys. Res. B",
1668 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1669 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1670 author = "J. K. N. Lindner and B. Stritzker",
1671 notes = "two-step implantation process",
1674 @Article{lindner99_2,
1675 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1677 journal = "Nucl. Instrum. Methods Phys. Res. B",
1683 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1684 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1685 author = "J. K. N. Lindner and B. Stritzker",
1686 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1690 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1691 Basic physical processes",
1692 journal = "Nucl. Instrum. Methods Phys. Res. B",
1699 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1700 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1701 author = "J{\"{o}}rg K. N. Lindner",
1705 title = "High-dose carbon implantations into silicon:
1706 fundamental studies for new technological tricks",
1707 author = "J. K. N. Lindner",
1708 journal = "Appl. Phys. A",
1712 doi = "10.1007/s00339-002-2062-8",
1713 notes = "ibs, burried sic layers",
1717 title = "On the balance between ion beam induced nanoparticle
1718 formation and displacive precipitate resolution in the
1720 journal = "Mater. Sci. Eng., C",
1725 note = "Current Trends in Nanoscience - from Materials to
1728 doi = "DOI: 10.1016/j.msec.2005.09.099",
1729 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1730 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1732 notes = "c int diffusion barrier",
1736 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1737 application in buffer layer for Ga{N} epitaxial
1739 journal = "Appl. Surf. Sci.",
1744 note = "APHYS'03 Special Issue",
1746 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1747 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1748 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1749 and S. Nishio and K. Yasuda and Y. Ishigami",
1750 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1753 @Article{yamamoto04,
1754 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1755 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1756 implantation into Si(1 1 1) substrate",
1757 journal = "J. Cryst. Growth",
1762 note = "Proceedings of the 11th Biennial (US) Workshop on
1763 Organometallic Vapor Phase Epitaxy (OMVPE)",
1765 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1766 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1767 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1768 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1769 notes = "gan on 3c-sic",
1773 title = "Substrates for gallium nitride epitaxy",
1774 journal = "Mater. Sci. Eng., R",
1781 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1782 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1783 author = "L. Liu and J. H. Edgar",
1784 notes = "gan substrates",
1787 @Article{takeuchi91,
1788 title = "Growth of single crystalline Ga{N} film on Si
1789 substrate using 3{C}-Si{C} as an intermediate layer",
1790 journal = "J. Cryst. Growth",
1797 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1798 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1799 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1800 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1801 notes = "gan on 3c-sic (first time?)",
1805 author = "B. J. Alder and T. E. Wainwright",
1806 title = "Phase Transition for a Hard Sphere System",
1809 journal = "J. Chem. Phys.",
1812 pages = "1208--1209",
1813 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1814 doi = "10.1063/1.1743957",
1818 author = "B. J. Alder and T. E. Wainwright",
1819 title = "Studies in Molecular Dynamics. {I}. General Method",
1822 journal = "J. Chem. Phys.",
1826 URL = "http://link.aip.org/link/?JCP/31/459/1",
1827 doi = "10.1063/1.1730376",
1830 @Article{horsfield96,
1831 title = "Bond-order potentials: Theory and implementation",
1832 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1833 D. G. Pettifor and M. Aoki",
1834 journal = "Phys. Rev. B",
1837 pages = "12694--12712",
1841 doi = "10.1103/PhysRevB.53.12694",
1842 publisher = "American Physical Society",
1846 title = "Empirical chemical pseudopotential theory of molecular
1847 and metallic bonding",
1848 author = "G. C. Abell",
1849 journal = "Phys. Rev. B",
1852 pages = "6184--6196",
1856 doi = "10.1103/PhysRevB.31.6184",
1857 publisher = "American Physical Society",
1860 @Article{tersoff_si1,
1861 title = "New empirical model for the structural properties of
1863 author = "J. Tersoff",
1864 journal = "Phys. Rev. Lett.",
1871 doi = "10.1103/PhysRevLett.56.632",
1872 publisher = "American Physical Society",
1876 title = "Development of a many-body Tersoff-type potential for
1878 author = "Brian W. Dodson",
1879 journal = "Phys. Rev. B",
1882 pages = "2795--2798",
1886 doi = "10.1103/PhysRevB.35.2795",
1887 publisher = "American Physical Society",
1890 @Article{tersoff_si2,
1891 title = "New empirical approach for the structure and energy of
1893 author = "J. Tersoff",
1894 journal = "Phys. Rev. B",
1897 pages = "6991--7000",
1901 doi = "10.1103/PhysRevB.37.6991",
1902 publisher = "American Physical Society",
1905 @Article{tersoff_si3,
1906 title = "Empirical interatomic potential for silicon with
1907 improved elastic properties",
1908 author = "J. Tersoff",
1909 journal = "Phys. Rev. B",
1912 pages = "9902--9905",
1916 doi = "10.1103/PhysRevB.38.9902",
1917 publisher = "American Physical Society",
1921 title = "Empirical Interatomic Potential for Carbon, with
1922 Applications to Amorphous Carbon",
1923 author = "J. Tersoff",
1924 journal = "Phys. Rev. Lett.",
1927 pages = "2879--2882",
1931 doi = "10.1103/PhysRevLett.61.2879",
1932 publisher = "American Physical Society",
1936 title = "Modeling solid-state chemistry: Interatomic potentials
1937 for multicomponent systems",
1938 author = "J. Tersoff",
1939 journal = "Phys. Rev. B",
1942 pages = "5566--5568",
1946 doi = "10.1103/PhysRevB.39.5566",
1947 publisher = "American Physical Society",
1951 title = "Carbon defects and defect reactions in silicon",
1952 author = "J. Tersoff",
1953 journal = "Phys. Rev. Lett.",
1956 pages = "1757--1760",
1960 doi = "10.1103/PhysRevLett.64.1757",
1961 publisher = "American Physical Society",
1965 title = "Point defects and dopant diffusion in silicon",
1966 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1967 journal = "Rev. Mod. Phys.",
1974 doi = "10.1103/RevModPhys.61.289",
1975 publisher = "American Physical Society",
1979 title = "Silicon carbide: synthesis and processing",
1980 journal = "Nucl. Instrum. Methods Phys. Res. B",
1985 note = "Radiation Effects in Insulators",
1987 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1988 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1989 author = "W. Wesch",
1993 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1994 Palmour and J. A. Edmond",
1995 journal = "Proc. IEEE",
1996 title = "Thin film deposition and microelectronic and
1997 optoelectronic device fabrication and characterization
1998 in monocrystalline alpha and beta silicon carbide",
2004 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2005 diode;SiC;dry etching;electrical
2006 contacts;etching;impurity incorporation;optoelectronic
2007 device fabrication;solid-state devices;surface
2008 chemistry;Schottky effect;Schottky gate field effect
2009 transistors;Schottky-barrier
2010 diodes;etching;heterojunction bipolar
2011 transistors;insulated gate field effect
2012 transistors;light emitting diodes;semiconductor
2013 materials;semiconductor thin films;silicon compounds;",
2014 doi = "10.1109/5.90132",
2016 notes = "sic growth methods",
2020 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2021 Lin and B. Sverdlov and M. Burns",
2023 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2024 ZnSe-based semiconductor device technologies",
2027 journal = "J. Appl. Phys.",
2030 pages = "1363--1398",
2031 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2032 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2033 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2035 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2036 doi = "10.1063/1.358463",
2037 notes = "sic intro, properties",
2041 author = "Noch Unbekannt",
2042 title = "How to find references",
2043 journal = "Journal of Applied References",
2050 title = "Atomistic simulation of thermomechanical properties of
2052 author = "Meijie Tang and Sidney Yip",
2053 journal = "Phys. Rev. B",
2056 pages = "15150--15159",
2059 doi = "10.1103/PhysRevB.52.15150",
2060 notes = "modified tersoff, scale cutoff with volume, promising
2061 tersoff reparametrization",
2062 publisher = "American Physical Society",
2066 title = "Silicon carbide as a new {MEMS} technology",
2067 journal = "Seonsor. Actuator. A",
2073 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2074 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2075 author = "Pasqualina M. Sarro",
2077 keywords = "Silicon carbide",
2078 keywords = "Micromachining",
2079 keywords = "Mechanical stress",
2083 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2084 semiconductor for high-temperature applications: {A}
2086 journal = "Solid-State Electron.",
2089 pages = "1409--1422",
2092 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2093 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2094 author = "J. B. Casady and R. W. Johnson",
2095 notes = "sic intro",
2098 @Article{giancarli98,
2099 title = "Design requirements for Si{C}/Si{C} composites
2100 structural material in fusion power reactor blankets",
2101 journal = "Fusion Eng. Des.",
2107 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2108 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2109 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2110 Marois and N. B. Morley and J. F. Salavy",
2114 title = "Electrical and optical characterization of Si{C}",
2115 journal = "Physica B",
2121 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2122 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2123 author = "G. Pensl and W. J. Choyke",
2127 title = "Investigation of growth processes of ingots of silicon
2128 carbide single crystals",
2129 journal = "J. Cryst. Growth",
2134 notes = "modified lely process",
2136 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2137 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2138 author = "Yu. M. Tairov and V. F. Tsvetkov",
2142 title = "General principles of growing large-size single
2143 crystals of various silicon carbide polytypes",
2144 journal = "J. Cryst. Growth",
2151 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2152 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2153 author = "Yu.M. Tairov and V. F. Tsvetkov",
2157 title = "Si{C} boule growth by sublimation vapor transport",
2158 journal = "J. Cryst. Growth",
2165 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2166 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2167 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2168 R. H. Hopkins and W. J. Choyke",
2172 title = "Growth of large Si{C} single crystals",
2173 journal = "J. Cryst. Growth",
2180 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2181 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2182 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2183 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2188 title = "Control of polytype formation by surface energy
2189 effects during the growth of Si{C} monocrystals by the
2190 sublimation method",
2191 journal = "J. Cryst. Growth",
2198 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2199 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2200 author = "R. A. Stein and P. Lanig",
2201 notes = "6h and 4h, sublimation technique",
2205 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2208 title = "Production of large-area single-crystal wafers of
2209 cubic Si{C} for semiconductor devices",
2212 journal = "Appl. Phys. Lett.",
2216 keywords = "silicon carbides; layers; chemical vapor deposition;
2218 URL = "http://link.aip.org/link/?APL/42/460/1",
2219 doi = "10.1063/1.93970",
2220 notes = "cvd of 3c-sic on si, sic buffer layer",
2224 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2225 and Hiroyuki Matsunami",
2227 title = "Epitaxial growth and electric characteristics of cubic
2231 journal = "J. Appl. Phys.",
2234 pages = "4889--4893",
2235 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2236 doi = "10.1063/1.338355",
2237 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2242 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2244 title = "Growth and Characterization of Cubic Si{C}
2245 Single-Crystal Films on Si",
2248 journal = "J. Electrochem. Soc.",
2251 pages = "1558--1565",
2252 keywords = "semiconductor materials; silicon compounds; carbon
2253 compounds; crystal morphology; electron mobility",
2254 URL = "http://link.aip.org/link/?JES/134/1558/1",
2255 doi = "10.1149/1.2100708",
2256 notes = "blue light emitting diodes (led)",
2259 @Article{powell87_2,
2260 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2261 C. M. Chorey and T. T. Cheng and P. Pirouz",
2263 title = "Improved beta-Si{C} heteroepitaxial films using
2264 off-axis Si substrates",
2267 journal = "Appl. Phys. Lett.",
2271 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2272 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2273 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2274 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2275 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2276 URL = "http://link.aip.org/link/?APL/51/823/1",
2277 doi = "10.1063/1.98824",
2278 notes = "improved sic on off-axis si substrates, reduced apbs",
2282 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2283 journal = "J. Cryst. Growth",
2290 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2291 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2292 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2294 notes = "step-controlled epitaxy model",
2298 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2299 and Hiroyuki Matsunami",
2300 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2304 journal = "J. Appl. Phys.",
2308 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2309 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2311 URL = "http://link.aip.org/link/?JAP/73/726/1",
2312 doi = "10.1063/1.353329",
2313 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2316 @Article{powell90_2,
2317 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2318 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2319 Yoganathan and J. Yang and P. Pirouz",
2321 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2322 vicinal (0001) 6{H}-Si{C} wafers",
2325 journal = "Appl. Phys. Lett.",
2328 pages = "1442--1444",
2329 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2330 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2331 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2332 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2333 URL = "http://link.aip.org/link/?APL/56/1442/1",
2334 doi = "10.1063/1.102492",
2335 notes = "cvd of 6h-sic on 6h-sic",
2339 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2341 title = "Chemical vapor deposition and characterization of
2342 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2346 journal = "J. Appl. Phys.",
2349 pages = "2672--2679",
2350 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2351 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2352 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2353 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2354 PHASE EPITAXY; CRYSTAL ORIENTATION",
2355 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2356 doi = "10.1063/1.341608",
2360 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2361 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2362 Yoganathan and J. Yang and P. Pirouz",
2364 title = "Growth of improved quality 3{C}-Si{C} films on
2365 6{H}-Si{C} substrates",
2368 journal = "Appl. Phys. Lett.",
2371 pages = "1353--1355",
2372 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2373 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2374 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2376 URL = "http://link.aip.org/link/?APL/56/1353/1",
2377 doi = "10.1063/1.102512",
2378 notes = "cvd of 3c-sic on 6h-sic",
2382 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2383 Rozgonyi and K. L. More",
2385 title = "An examination of double positioning boundaries and
2386 interface misfit in beta-Si{C} films on alpha-Si{C}
2390 journal = "J. Appl. Phys.",
2393 pages = "2645--2650",
2394 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2395 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2396 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2397 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2398 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2399 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2400 doi = "10.1063/1.341004",
2404 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2405 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2406 and W. J. Choyke and L. Clemen and M. Yoganathan",
2408 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2409 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2412 journal = "Appl. Phys. Lett.",
2416 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2417 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2418 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2419 URL = "http://link.aip.org/link/?APL/59/333/1",
2420 doi = "10.1063/1.105587",
2424 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2425 Thokala and M. J. Loboda",
2427 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2428 films on 6{H}-Si{C} by chemical vapor deposition from
2432 journal = "J. Appl. Phys.",
2435 pages = "1271--1273",
2436 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2437 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2439 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2440 doi = "10.1063/1.360368",
2441 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2445 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2446 properties of its p-n junction",
2447 journal = "J. Cryst. Growth",
2454 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2455 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2456 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2458 notes = "first time ssmbe of 3c-sic on 6h-sic",
2462 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2463 [alpha]-Si{C}(0001) at low temperatures by solid-source
2464 molecular beam epitaxy",
2465 journal = "J. Cryst. Growth",
2471 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2472 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2473 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2474 Schr{\"{o}}ter and W. Richter",
2475 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2478 @Article{fissel95_apl,
2479 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2481 title = "Low-temperature growth of Si{C} thin films on Si and
2482 6{H}--Si{C} by solid-source molecular beam epitaxy",
2485 journal = "Appl. Phys. Lett.",
2488 pages = "3182--3184",
2489 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2491 URL = "http://link.aip.org/link/?APL/66/3182/1",
2492 doi = "10.1063/1.113716",
2493 notes = "mbe 3c-sic on si and 6h-sic",
2497 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2498 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2500 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2501 migration enhanced epitaxy controlled to an atomic
2502 level using surface superstructures",
2505 journal = "Appl. Phys. Lett.",
2508 pages = "1204--1206",
2509 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2510 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2512 URL = "http://link.aip.org/link/?APL/68/1204/1",
2513 doi = "10.1063/1.115969",
2514 notes = "ss mbe sic, superstructure, reconstruction",
2518 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2519 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2520 C. M. Bertoni and A. Catellani",
2521 journal = "Phys. Rev. Lett.",
2528 doi = "10.1103/PhysRevLett.91.136101",
2529 publisher = "American Physical Society",
2530 notes = "dft calculations mbe sic growth",
2534 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2536 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2540 journal = "Appl. Phys. Lett.",
2544 URL = "http://link.aip.org/link/?APL/18/509/1",
2545 doi = "10.1063/1.1653516",
2546 notes = "first time sic by ibs, follow cites for precipitation
2551 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2552 and E. V. Lubopytova",
2553 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2554 by ion implantation",
2555 publisher = "Taylor \& Francis",
2557 journal = "Radiat. Eff.",
2561 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2562 notes = "3c-sic for different temperatures, amorphous, poly,
2563 single crystalline",
2566 @Article{akimchenko80,
2567 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2568 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2569 title = "Structure and optical properties of silicon implanted
2570 by high doses of 70 and 310 ke{V} carbon ions",
2571 publisher = "Taylor \& Francis",
2573 journal = "Radiat. Eff.",
2577 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2578 notes = "3c-sic nucleation by thermal spikes",
2582 title = "Structure and annealing properties of silicon carbide
2583 thin layers formed by implantation of carbon ions in
2585 journal = "Thin Solid Films",
2592 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2593 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2594 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2599 title = "Characteristics of the synthesis of [beta]-Si{C} by
2600 the implantation of carbon ions into silicon",
2601 journal = "Thin Solid Films",
2608 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2609 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2610 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2615 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2616 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2617 Chater and J. A. Iulner and J. Davis",
2618 title = "Formation mechanisms and structures of insulating
2619 compounds formed in silicon by ion beam synthesis",
2620 publisher = "Taylor \& Francis",
2622 journal = "Radiat. Eff.",
2626 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2627 notes = "ibs, comparison with sio and sin, higher temp or time,
2628 no c redistribution",
2632 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2633 J. Davis and G. E. Celler",
2635 title = "Formation of buried layers of beta-Si{C} using ion
2636 beam synthesis and incoherent lamp annealing",
2639 journal = "Appl. Phys. Lett.",
2642 pages = "2242--2244",
2643 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2644 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2645 URL = "http://link.aip.org/link/?APL/51/2242/1",
2646 doi = "10.1063/1.98953",
2647 notes = "nice tem images, sic by ibs",
2651 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2652 and M. Olivier and A. M. Papon and G. Rolland",
2654 title = "High-temperature ion beam synthesis of cubic Si{C}",
2657 journal = "J. Appl. Phys.",
2660 pages = "2908--2912",
2661 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2662 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2663 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2664 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2665 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2666 REACTIONS; MONOCRYSTALS",
2667 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2668 doi = "10.1063/1.346092",
2669 notes = "triple energy implantation to overcome high annealing
2674 author = "R. I. Scace and G. A. Slack",
2676 title = "Solubility of Carbon in Silicon and Germanium",
2679 journal = "J. Chem. Phys.",
2682 pages = "1551--1555",
2683 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2684 doi = "10.1063/1.1730236",
2685 notes = "solubility of c in c-si, si-c phase diagram",
2689 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2691 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2692 Laboratories Eindhoven Netherlands Eindhoven
2694 title = "Boron implantations in silicon: {A} comparison of
2695 charge carrier and boron concentration profiles",
2696 journal = "Appl. Phys. A",
2697 publisher = "Springer Berlin / Heidelberg",
2699 keyword = "Physics and Astronomy",
2703 URL = "http://dx.doi.org/10.1007/BF00884267",
2704 note = "10.1007/BF00884267",
2706 notes = "first time ted (only for boron?)",
2710 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2713 title = "Rapid annealing and the anomalous diffusion of ion
2714 implanted boron into silicon",
2717 journal = "Appl. Phys. Lett.",
2721 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2722 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2723 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2724 URL = "http://link.aip.org/link/?APL/50/416/1",
2725 doi = "10.1063/1.98160",
2726 notes = "ted of boron in si",
2730 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2733 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2734 time, and matrix dependence of atomic and electrical
2738 journal = "J. Appl. Phys.",
2741 pages = "6191--6198",
2742 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2743 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2744 CRYSTALS; AMORPHIZATION",
2745 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2746 doi = "10.1063/1.346910",
2747 notes = "ted of boron in si",
2751 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2752 F. W. Saris and W. Vandervorst",
2754 title = "Role of {C} and {B} clusters in transient diffusion of
2758 journal = "Appl. Phys. Lett.",
2761 pages = "1150--1152",
2762 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2763 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2765 URL = "http://link.aip.org/link/?APL/68/1150/1",
2766 doi = "10.1063/1.115706",
2767 notes = "suppression of transient enhanced diffusion (ted)",
2771 title = "Implantation and transient boron diffusion: the role
2772 of the silicon self-interstitial",
2773 journal = "Nucl. Instrum. Methods Phys. Res. B",
2778 note = "Selected Papers of the Tenth International Conference
2779 on Ion Implantation Technology (IIT '94)",
2781 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2782 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2783 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2788 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2789 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2790 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2793 title = "Physical mechanisms of transient enhanced dopant
2794 diffusion in ion-implanted silicon",
2797 journal = "J. Appl. Phys.",
2800 pages = "6031--6050",
2801 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2802 doi = "10.1063/1.364452",
2803 notes = "ted, transient enhanced diffusion, c silicon trap",
2807 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2809 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2810 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2813 journal = "Appl. Phys. Lett.",
2817 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2818 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2819 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2821 URL = "http://link.aip.org/link/?APL/64/324/1",
2822 doi = "10.1063/1.111195",
2823 notes = "beta sic nano crystals in si, mbe, annealing",
2827 author = "Richard A. Soref",
2829 title = "Optical band gap of the ternary semiconductor Si[sub 1
2830 - x - y]Ge[sub x]{C}[sub y]",
2833 journal = "J. Appl. Phys.",
2836 pages = "2470--2472",
2837 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2838 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2840 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2841 doi = "10.1063/1.349403",
2842 notes = "band gap of strained si by c",
2846 author = "E Kasper",
2847 title = "Superlattices of group {IV} elements, a new
2848 possibility to produce direct band gap material",
2849 journal = "Phys. Scr.",
2852 URL = "http://stacks.iop.org/1402-4896/T35/232",
2854 notes = "superlattices, convert indirect band gap into a
2859 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2862 title = "Growth and strain compensation effects in the ternary
2863 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2866 journal = "Appl. Phys. Lett.",
2869 pages = "3033--3035",
2870 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2871 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2872 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2873 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2875 URL = "http://link.aip.org/link/?APL/60/3033/1",
2876 doi = "10.1063/1.106774",
2880 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2883 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2887 journal = "J. Vac. Sci. Technol. B",
2890 pages = "1064--1068",
2891 location = "Ottawa (Canada)",
2892 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2893 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2894 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2895 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2896 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2897 doi = "10.1116/1.587008",
2898 notes = "substitutional c in si by mbe",
2901 @Article{powell93_2,
2902 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2903 of the ternary system",
2904 journal = "J. Cryst. Growth",
2911 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2912 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2913 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2918 author = "H. J. Osten",
2919 title = "Modification of Growth Modes in Lattice-Mismatched
2920 Epitaxial Systems: Si/Ge",
2921 journal = "phys. status solidi (a)",
2924 publisher = "WILEY-VCH Verlag",
2926 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2927 doi = "10.1002/pssa.2211450203",
2932 @Article{dietrich94,
2933 title = "Lattice distortion in a strain-compensated
2934 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2935 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2936 Methfessel and P. Zaumseil",
2937 journal = "Phys. Rev. B",
2940 pages = "17185--17190",
2944 doi = "10.1103/PhysRevB.49.17185",
2945 publisher = "American Physical Society",
2949 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2951 title = "Growth of an inverse tetragonal distorted SiGe layer
2952 on Si(001) by adding small amounts of carbon",
2955 journal = "Appl. Phys. Lett.",
2958 pages = "3440--3442",
2959 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2960 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2961 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2963 URL = "http://link.aip.org/link/?APL/64/3440/1",
2964 doi = "10.1063/1.111235",
2965 notes = "inversely strained / distorted heterostructure",
2969 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2970 LeGoues and J. C. Tsang and F. Cardone",
2972 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2973 molecular beam epitaxy",
2976 journal = "Appl. Phys. Lett.",
2980 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2981 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2982 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2983 FILM GROWTH; MICROSTRUCTURE",
2984 URL = "http://link.aip.org/link/?APL/60/356/1",
2985 doi = "10.1063/1.106655",
2989 author = "H. J. Osten and J. Griesche and S. Scalese",
2991 title = "Substitutional carbon incorporation in epitaxial
2992 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2993 molecular beam epitaxy",
2996 journal = "Appl. Phys. Lett.",
3000 keywords = "molecular beam epitaxial growth; semiconductor growth;
3001 wide band gap semiconductors; interstitials; silicon
3003 URL = "http://link.aip.org/link/?APL/74/836/1",
3004 doi = "10.1063/1.123384",
3005 notes = "substitutional c in si by mbe",
3009 author = "M. Born and R. Oppenheimer",
3010 title = "Zur Quantentheorie der Molekeln",
3011 journal = "Ann. Phys. (Leipzig)",
3014 publisher = "WILEY-VCH Verlag",
3016 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3017 doi = "10.1002/andp.19273892002",
3022 @Article{hohenberg64,
3023 title = "Inhomogeneous Electron Gas",
3024 author = "P. Hohenberg and W. Kohn",
3025 journal = "Phys. Rev.",
3028 pages = "B864--B871",
3032 doi = "10.1103/PhysRev.136.B864",
3033 publisher = "American Physical Society",
3034 notes = "density functional theory, dft",
3038 title = "The calculation of atomic fields",
3039 author = "L. H. Thomas",
3040 journal = "Proc. Cambridge Philos. Soc.",
3044 doi = "10.1017/S0305004100011683",
3049 author = "E. Fermi",
3050 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3058 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3059 Central Field. Part {I}. Theory and Methods",
3060 author = "D. R. Hartree",
3061 journal = "Proc. Cambridge Philos. Soc.",
3065 doi = "10.1017/S0305004100011919",
3069 title = "The Theory of Complex Spectra",
3070 author = "J. C. Slater",
3071 journal = "Phys. Rev.",
3074 pages = "1293--1322",
3078 doi = "10.1103/PhysRev.34.1293",
3079 publisher = "American Physical Society",
3083 title = "Self-Consistent Equations Including Exchange and
3084 Correlation Effects",
3085 author = "W. Kohn and L. J. Sham",
3086 journal = "Phys. Rev.",
3089 pages = "A1133--A1138",
3093 doi = "10.1103/PhysRev.140.A1133",
3094 publisher = "American Physical Society",
3095 notes = "dft, exchange and correlation",
3099 title = "Density Functional and Density Matrix Method Scaling
3100 Linearly with the Number of Atoms",
3102 journal = "Phys. Rev. Lett.",
3105 pages = "3168--3171",
3109 doi = "10.1103/PhysRevLett.76.3168",
3110 publisher = "American Physical Society",
3114 title = "Edge Electron Gas",
3115 author = "Walter Kohn and Ann E. Mattsson",
3116 journal = "Phys. Rev. Lett.",
3119 pages = "3487--3490",
3123 doi = "10.1103/PhysRevLett.81.3487",
3124 publisher = "American Physical Society",
3128 title = "Nobel Lecture: Electronic structure of matter---wave
3129 functions and density functionals",
3131 journal = "Rev. Mod. Phys.",
3134 pages = "1253--1266",
3138 doi = "10.1103/RevModPhys.71.1253",
3139 publisher = "American Physical Society",
3143 title = "Iterative minimization techniques for ab initio
3144 total-energy calculations: molecular dynamics and
3145 conjugate gradients",
3146 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3147 Arias and J. D. Joannopoulos",
3148 journal = "Rev. Mod. Phys.",
3151 pages = "1045--1097",
3155 doi = "10.1103/RevModPhys.64.1045",
3156 publisher = "American Physical Society",
3160 title = "Electron densities in search of Hamiltonians",
3161 author = "Mel Levy",
3162 journal = "Phys. Rev. A",
3165 pages = "1200--1208",
3169 doi = "10.1103/PhysRevA.26.1200",
3170 publisher = "American Physical Society",
3174 title = "Strain-stabilized highly concentrated pseudomorphic
3175 $Si1-x$$Cx$ layers in Si",
3176 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3178 journal = "Phys. Rev. Lett.",
3181 pages = "3578--3581",
3185 doi = "10.1103/PhysRevLett.72.3578",
3186 publisher = "American Physical Society",
3187 notes = "high c concentration in si, heterostructure, strained
3192 title = "Phosphorous Doping of Strain-Induced
3193 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3194 by Low-Temperature Chemical Vapor Deposition",
3195 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3196 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3197 journal = "Japanese J. Appl. Phys.",
3199 number = "Part 1, No. 4B",
3200 pages = "2472--2475",
3203 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3204 doi = "10.1143/JJAP.41.2472",
3205 publisher = "The Japan Society of Applied Physics",
3206 notes = "experimental charge carrier mobility in strained si",
3210 title = "Electron Transport Model for Strained Silicon-Carbon
3212 author = "Shu-Tong Chang and Chung-Yi Lin",
3213 journal = "Japanese J. Appl. Phys.",
3216 pages = "2257--2262",
3219 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3220 doi = "10.1143/JJAP.44.2257",
3221 publisher = "The Japan Society of Applied Physics",
3222 notes = "enhance of electron mobility in strained si",
3225 @Article{kissinger94,
3226 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3229 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3230 y] layers on Si(001)",
3233 journal = "Appl. Phys. Lett.",
3236 pages = "3356--3358",
3237 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3238 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3239 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3240 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3241 URL = "http://link.aip.org/link/?APL/65/3356/1",
3242 doi = "10.1063/1.112390",
3243 notes = "strained si influence on optical properties",
3247 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3250 title = "Substitutional versus interstitial carbon
3251 incorporation during pseudomorphic growth of Si[sub 1 -
3252 y]{C}[sub y] on Si(001)",
3255 journal = "J. Appl. Phys.",
3258 pages = "6711--6715",
3259 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3260 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3262 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3263 doi = "10.1063/1.363797",
3264 notes = "mbe substitutional vs interstitial c incorporation",
3268 author = "H. J. Osten and P. Gaworzewski",
3270 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3271 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3275 journal = "J. Appl. Phys.",
3278 pages = "4977--4981",
3279 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3280 semiconductors; semiconductor epitaxial layers; carrier
3281 density; Hall mobility; interstitials; defect states",
3282 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3283 doi = "10.1063/1.366364",
3284 notes = "charge transport in strained si",
3288 title = "Carbon-mediated aggregation of self-interstitials in
3289 silicon: {A} large-scale molecular dynamics study",
3290 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3291 journal = "Phys. Rev. B",
3298 doi = "10.1103/PhysRevB.69.155214",
3299 publisher = "American Physical Society",
3300 notes = "simulation using promising tersoff reparametrization",
3304 title = "Event-Based Relaxation of Continuous Disordered
3306 author = "G. T. Barkema and Normand Mousseau",
3307 journal = "Phys. Rev. Lett.",
3310 pages = "4358--4361",
3314 doi = "10.1103/PhysRevLett.77.4358",
3315 publisher = "American Physical Society",
3316 notes = "activation relaxation technique, art, speed up slow
3321 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3322 Minoukadeh and F. Willaime",
3324 title = "Some improvements of the activation-relaxation
3325 technique method for finding transition pathways on
3326 potential energy surfaces",
3329 journal = "J. Chem. Phys.",
3335 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3336 surfaces; vacancies (crystal)",
3337 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3338 doi = "10.1063/1.3088532",
3339 notes = "improvements to art, refs for methods to find
3340 transition pathways",
3343 @Article{parrinello81,
3344 author = "M. Parrinello and A. Rahman",
3346 title = "Polymorphic transitions in single crystals: {A} new
3347 molecular dynamics method",
3350 journal = "J. Appl. Phys.",
3353 pages = "7182--7190",
3354 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3355 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3356 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3357 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3358 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3360 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3361 doi = "10.1063/1.328693",
3364 @Article{stillinger85,
3365 title = "Computer simulation of local order in condensed phases
3367 author = "Frank H. Stillinger and Thomas A. Weber",
3368 journal = "Phys. Rev. B",
3371 pages = "5262--5271",
3375 doi = "10.1103/PhysRevB.31.5262",
3376 publisher = "American Physical Society",
3380 title = "Empirical potential for hydrocarbons for use in
3381 simulating the chemical vapor deposition of diamond
3383 author = "Donald W. Brenner",
3384 journal = "Phys. Rev. B",
3387 pages = "9458--9471",
3391 doi = "10.1103/PhysRevB.42.9458",
3392 publisher = "American Physical Society",
3393 notes = "brenner hydro carbons",
3397 title = "Modeling of Covalent Bonding in Solids by Inversion of
3398 Cohesive Energy Curves",
3399 author = "Martin Z. Bazant and Efthimios Kaxiras",
3400 journal = "Phys. Rev. Lett.",
3403 pages = "4370--4373",
3407 doi = "10.1103/PhysRevLett.77.4370",
3408 publisher = "American Physical Society",
3409 notes = "first si edip",
3413 title = "Environment-dependent interatomic potential for bulk
3415 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3417 journal = "Phys. Rev. B",
3420 pages = "8542--8552",
3424 doi = "10.1103/PhysRevB.56.8542",
3425 publisher = "American Physical Society",
3426 notes = "second si edip",
3430 title = "Interatomic potential for silicon defects and
3432 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3433 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3434 journal = "Phys. Rev. B",
3437 pages = "2539--2550",
3441 doi = "10.1103/PhysRevB.58.2539",
3442 publisher = "American Physical Society",
3443 notes = "latest si edip, good dislocation explanation",
3447 title = "{PARCAS} molecular dynamics code",
3448 author = "K. Nordlund",
3453 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3455 author = "Arthur F. Voter",
3456 journal = "Phys. Rev. Lett.",
3459 pages = "3908--3911",
3463 doi = "10.1103/PhysRevLett.78.3908",
3464 publisher = "American Physical Society",
3465 notes = "hyperdynamics, accelerated md",
3469 author = "Arthur F. Voter",
3471 title = "A method for accelerating the molecular dynamics
3472 simulation of infrequent events",
3475 journal = "J. Chem. Phys.",
3478 pages = "4665--4677",
3479 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3480 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3481 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3482 energy functions; surface diffusion; reaction kinetics
3483 theory; potential energy surfaces",
3484 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3485 doi = "10.1063/1.473503",
3486 notes = "improved hyperdynamics md",
3489 @Article{sorensen2000,
3490 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3492 title = "Temperature-accelerated dynamics for simulation of
3496 journal = "J. Chem. Phys.",
3499 pages = "9599--9606",
3500 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3501 MOLECULAR DYNAMICS METHOD; surface diffusion",
3502 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3503 doi = "10.1063/1.481576",
3504 notes = "temperature accelerated dynamics, tad",
3508 title = "Parallel replica method for dynamics of infrequent
3510 author = "Arthur F. Voter",
3511 journal = "Phys. Rev. B",
3514 pages = "R13985--R13988",
3518 doi = "10.1103/PhysRevB.57.R13985",
3519 publisher = "American Physical Society",
3520 notes = "parallel replica method, accelerated md",
3524 author = "Xiongwu Wu and Shaomeng Wang",
3526 title = "Enhancing systematic motion in molecular dynamics
3530 journal = "J. Chem. Phys.",
3533 pages = "9401--9410",
3534 keywords = "molecular dynamics method; argon; Lennard-Jones
3535 potential; crystallisation; liquid theory",
3536 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3537 doi = "10.1063/1.478948",
3538 notes = "self guided md, sgmd, accelerated md, enhancing
3542 @Article{choudhary05,
3543 author = "Devashish Choudhary and Paulette Clancy",
3545 title = "Application of accelerated molecular dynamics schemes
3546 to the production of amorphous silicon",
3549 journal = "J. Chem. Phys.",
3555 keywords = "molecular dynamics method; silicon; glass structure;
3556 amorphous semiconductors",
3557 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3558 doi = "10.1063/1.1878733",
3559 notes = "explanation of sgmd and hyper md, applied to amorphous
3564 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3566 title = "Carbon precipitation in silicon: Why is it so
3570 journal = "Appl. Phys. Lett.",
3573 pages = "3336--3338",
3574 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3575 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3577 URL = "http://link.aip.org/link/?APL/62/3336/1",
3578 doi = "10.1063/1.109063",
3579 notes = "interfacial energy of cubic sic and si, si self
3580 interstitials necessary for precipitation, volume
3581 decrease, high interface energy",
3584 @Article{chaussende08,
3585 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3586 journal = "J. Cryst. Growth",
3591 note = "Proceedings of the E-MRS Conference, Symposium G -
3592 Substrates of Wide Bandgap Materials",
3594 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3595 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3596 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3597 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3598 and A. Andreadou and E. K. Polychroniadis and C.
3599 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3600 notes = "3c-sic crystal growth, sic fabrication + links,
3604 @Article{chaussende07,
3605 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3606 title = "Status of Si{C} bulk growth processes",
3607 journal = "J. Phys. D",
3611 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3613 notes = "review of sic single crystal growth methods, process
3618 title = "Forces in Molecules",
3619 author = "R. P. Feynman",
3620 journal = "Phys. Rev.",
3627 doi = "10.1103/PhysRev.56.340",
3628 publisher = "American Physical Society",
3629 notes = "hellmann feynman forces",
3633 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3634 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3635 their Contrasting Properties",
3636 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3638 journal = "Phys. Rev. Lett.",
3645 doi = "10.1103/PhysRevLett.84.943",
3646 publisher = "American Physical Society",
3647 notes = "si sio2 and sic sio2 interface",
3650 @Article{djurabekova08,
3651 title = "Atomistic simulation of the interface structure of Si
3652 nanocrystals embedded in amorphous silica",
3653 author = "Flyura Djurabekova and Kai Nordlund",
3654 journal = "Phys. Rev. B",
3661 doi = "10.1103/PhysRevB.77.115325",
3662 publisher = "American Physical Society",
3663 notes = "nc-si in sio2, interface energy, nc construction,
3664 angular distribution, coordination",
3668 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3669 W. Liang and J. Zou",
3671 title = "Nature of interfacial defects and their roles in
3672 strain relaxation at highly lattice mismatched
3673 3{C}-Si{C}/Si (001) interface",
3676 journal = "J. Appl. Phys.",
3682 keywords = "anelastic relaxation; crystal structure; dislocations;
3683 elemental semiconductors; semiconductor growth;
3684 semiconductor thin films; silicon; silicon compounds;
3685 stacking faults; wide band gap semiconductors",
3686 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3687 doi = "10.1063/1.3234380",
3688 notes = "sic/si interface, follow refs, tem image
3689 deconvolution, dislocation defects",
3692 @Article{kitabatake93,
3693 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3696 title = "Simulations and experiments of Si{C} heteroepitaxial
3697 growth on Si(001) surface",
3700 journal = "J. Appl. Phys.",
3703 pages = "4438--4445",
3704 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3705 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3706 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3707 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3708 doi = "10.1063/1.354385",
3709 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3713 @Article{kitabatake97,
3714 author = "Makoto Kitabatake",
3715 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3716 Heteroepitaxial Growth",
3717 publisher = "WILEY-VCH Verlag",
3719 journal = "phys. status solidi (b)",
3722 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3723 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3724 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3728 title = "Strain relaxation and thermal stability of the
3729 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3731 journal = "Thin Solid Films",
3738 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3739 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3740 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3741 keywords = "Strain relaxation",
3742 keywords = "Interfaces",
3743 keywords = "Thermal stability",
3744 keywords = "Molecular dynamics",
3745 notes = "tersoff sic/si interface study",
3749 title = "Ab initio Study of Misfit Dislocations at the
3750 $Si{C}/Si(001)$ Interface",
3751 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3753 journal = "Phys. Rev. Lett.",
3760 doi = "10.1103/PhysRevLett.89.156101",
3761 publisher = "American Physical Society",
3762 notes = "sic/si interface study",
3765 @Article{pizzagalli03,
3766 title = "Theoretical investigations of a highly mismatched
3767 interface: Si{C}/Si(001)",
3768 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3770 journal = "Phys. Rev. B",
3777 doi = "10.1103/PhysRevB.68.195302",
3778 publisher = "American Physical Society",
3779 notes = "tersoff md and ab initio sic/si interface study",
3783 title = "Atomic configurations of dislocation core and twin
3784 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3785 electron microscopy",
3786 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3787 H. Zheng and J. W. Liang",
3788 journal = "Phys. Rev. B",
3795 doi = "10.1103/PhysRevB.75.184103",
3796 publisher = "American Physical Society",
3797 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3801 @Article{hornstra58,
3802 title = "Dislocations in the diamond lattice",
3803 journal = "J. Phys. Chem. Solids",
3810 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3811 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3812 author = "J. Hornstra",
3813 notes = "dislocations in diamond lattice",
3817 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3818 Ion `Hot' Implantation",
3819 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3820 Hirao and Naoki Arai and Tomio Izumi",
3821 journal = "Japanese J. Appl. Phys.",
3823 number = "Part 1, No. 2A",
3827 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3828 doi = "10.1143/JJAP.31.343",
3829 publisher = "The Japan Society of Applied Physics",
3830 notes = "c-c bonds in c implanted si, hot implantation
3831 efficiency, c-c hard to break by thermal annealing",
3834 @Article{eichhorn99,
3835 author = "F. Eichhorn and N. Schell and W. Matz and R.
3838 title = "Strain and Si{C} particle formation in silicon
3839 implanted with carbon ions of medium fluence studied by
3840 synchrotron x-ray diffraction",
3843 journal = "J. Appl. Phys.",
3846 pages = "4184--4187",
3847 keywords = "silicon; carbon; elemental semiconductors; chemical
3848 interdiffusion; ion implantation; X-ray diffraction;
3849 precipitation; semiconductor doping",
3850 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3851 doi = "10.1063/1.371344",
3852 notes = "sic conversion by ibs, detected substitutional carbon,
3853 expansion of si lattice",
3856 @Article{eichhorn02,
3857 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3858 Metzger and W. Matz and R. K{\"{o}}gler",
3860 title = "Structural relation between Si and Si{C} formed by
3861 carbon ion implantation",
3864 journal = "J. Appl. Phys.",
3867 pages = "1287--1292",
3868 keywords = "silicon compounds; wide band gap semiconductors; ion
3869 implantation; annealing; X-ray scattering; transmission
3870 electron microscopy",
3871 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3872 doi = "10.1063/1.1428105",
3873 notes = "3c-sic alignement to si host in ibs depending on
3874 temperature, might explain c into c sub trafo",
3878 author = "G Lucas and M Bertolus and L Pizzagalli",
3879 title = "An environment-dependent interatomic potential for
3880 silicon carbide: calculation of bulk properties,
3881 high-pressure phases, point and extended defects, and
3882 amorphous structures",
3883 journal = "J. Phys.: Condens. Matter",
3887 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3893 author = "J Godet and L Pizzagalli and S Brochard and P
3895 title = "Comparison between classical potentials and ab initio
3896 methods for silicon under large shear",
3897 journal = "J. Phys.: Condens. Matter",
3901 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3903 notes = "comparison of empirical potentials, stillinger weber,
3904 edip, tersoff, ab initio",
3907 @Article{moriguchi98,
3908 title = "Verification of Tersoff's Potential for Static
3909 Structural Analysis of Solids of Group-{IV} Elements",
3910 author = "Koji Moriguchi and Akira Shintani",
3911 journal = "Japanese J. Appl. Phys.",
3913 number = "Part 1, No. 2",
3917 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3918 doi = "10.1143/JJAP.37.414",
3919 publisher = "The Japan Society of Applied Physics",
3920 notes = "tersoff stringent test",
3923 @Article{mazzarolo01,
3924 title = "Low-energy recoils in crystalline silicon: Quantum
3926 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3927 Lulli and Eros Albertazzi",
3928 journal = "Phys. Rev. B",
3935 doi = "10.1103/PhysRevB.63.195207",
3936 publisher = "American Physical Society",
3939 @Article{holmstroem08,
3940 title = "Threshold defect production in silicon determined by
3941 density functional theory molecular dynamics
3943 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3944 journal = "Phys. Rev. B",
3951 doi = "10.1103/PhysRevB.78.045202",
3952 publisher = "American Physical Society",
3953 notes = "threshold displacement comparison empirical and ab
3957 @Article{nordlund97,
3958 title = "Repulsive interatomic potentials calculated using
3959 Hartree-Fock and density-functional theory methods",
3960 journal = "Nucl. Instrum. Methods Phys. Res. B",
3967 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3968 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3969 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3970 notes = "repulsive ab initio potential",
3974 title = "Efficiency of ab-initio total energy calculations for
3975 metals and semiconductors using a plane-wave basis
3977 journal = "Comput. Mater. Sci.",
3984 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3985 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3986 author = "G. Kresse and J. Furthm{\"{u}}ller",
3991 title = "Projector augmented-wave method",
3992 author = "P. E. Bl{\"o}chl",
3993 journal = "Phys. Rev. B",
3996 pages = "17953--17979",
4000 doi = "10.1103/PhysRevB.50.17953",
4001 publisher = "American Physical Society",
4002 notes = "paw method",
4005 @InCollection{cohen70,
4006 title = "The Fitting of Pseudopotentials to Experimental Data
4007 and Their Subsequent Application",
4008 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4010 publisher = "Academic Press",
4014 series = "Solid State Physics",
4016 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4017 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4018 author = "Marvin L. Cohen and Volker Heine",
4022 title = "Norm-Conserving Pseudopotentials",
4023 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4024 journal = "Phys. Rev. Lett.",
4027 pages = "1494--1497",
4031 doi = "10.1103/PhysRevLett.43.1494",
4032 publisher = "American Physical Society",
4033 notes = "norm-conserving pseudopotentials",
4036 @Article{troullier91,
4037 title = "Efficient pseudopotentials for plane-wave
4039 author = "N. Troullier and Jos\'e Luriaas Martins",
4040 journal = "Phys. Rev. B",
4043 pages = "1993--2006",
4047 doi = "10.1103/PhysRevB.43.1993",
4048 publisher = "American Physical Society",
4051 @Article{vanderbilt90,
4052 title = "Soft self-consistent pseudopotentials in a generalized
4053 eigenvalue formalism",
4054 author = "David Vanderbilt",
4055 journal = "Phys. Rev. B",
4058 pages = "7892--7895",
4062 doi = "10.1103/PhysRevB.41.7892",
4063 publisher = "American Physical Society",
4064 notes = "vasp pseudopotentials",
4067 @Article{ceperley80,
4068 title = "Ground State of the Electron Gas by a Stochastic
4070 author = "D. M. Ceperley and B. J. Alder",
4071 journal = "Phys. Rev. Lett.",
4078 doi = "10.1103/PhysRevLett.45.566",
4079 publisher = "American Physical Society",
4083 title = "Self-interaction correction to density-functional
4084 approximations for many-electron systems",
4085 author = "J. P. Perdew and Alex Zunger",
4086 journal = "Phys. Rev. B",
4089 pages = "5048--5079",
4093 doi = "10.1103/PhysRevB.23.5048",
4094 publisher = "American Physical Society",
4098 title = "Accurate and simple density functional for the
4099 electronic exchange energy: Generalized gradient
4101 author = "John P. Perdew and Yue Wang",
4102 journal = "Phys. Rev. B",
4105 pages = "8800--8802",
4109 doi = "10.1103/PhysRevB.33.8800",
4110 publisher = "American Physical Society",
4111 notes = "rapid communication gga",
4115 title = "Generalized gradient approximations for exchange and
4116 correlation: {A} look backward and forward",
4117 journal = "Physica B",
4124 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4125 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4126 author = "John P. Perdew",
4127 notes = "gga overview",
4131 title = "Atoms, molecules, solids, and surfaces: Applications
4132 of the generalized gradient approximation for exchange
4134 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4135 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4136 and Carlos Fiolhais",
4137 journal = "Phys. Rev. B",
4140 pages = "6671--6687",
4144 doi = "10.1103/PhysRevB.46.6671",
4145 publisher = "American Physical Society",
4146 notes = "gga pw91 (as in vasp)",
4150 title = "Special Points in the Brillouin Zone",
4151 author = "D. J. Chadi and Marvin L. Cohen",
4152 journal = "Phys. Rev. B",
4155 pages = "5747--5753",
4159 doi = "10.1103/PhysRevB.8.5747",
4160 publisher = "American Physical Society",
4163 @Article{baldereschi73,
4164 title = "Mean-Value Point in the Brillouin Zone",
4165 author = "A. Baldereschi",
4166 journal = "Phys. Rev. B",
4169 pages = "5212--5215",
4173 doi = "10.1103/PhysRevB.7.5212",
4174 publisher = "American Physical Society",
4175 notes = "mean value k point",
4178 @Article{monkhorst76,
4179 title = "Special points for Brillouin-zone integrations",
4180 author = "Hendrik J. Monkhorst and James D. Pack",
4181 journal = "Phys. Rev. B",
4184 pages = "5188--5192",
4188 doi = "10.1103/PhysRevB.13.5188",
4189 publisher = "American Physical Society",
4193 title = "Ab initio pseudopotential calculations of dopant
4195 journal = "Comput. Mater. Sci.",
4202 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4203 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4204 author = "Jing Zhu",
4205 keywords = "TED (transient enhanced diffusion)",
4206 keywords = "Boron dopant",
4207 keywords = "Carbon dopant",
4208 keywords = "Defect",
4209 keywords = "ab initio pseudopotential method",
4210 keywords = "Impurity cluster",
4211 notes = "binding of c to si interstitial, c in si defects",
4215 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4217 title = "Si{C} buried layer formation by ion beam synthesis at
4221 journal = "Appl. Phys. Lett.",
4224 pages = "2646--2648",
4225 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4226 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4227 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4228 ELECTRON MICROSCOPY",
4229 URL = "http://link.aip.org/link/?APL/66/2646/1",
4230 doi = "10.1063/1.113112",
4231 notes = "precipitation mechanism by substitutional carbon, si
4232 self interstitials react with further implanted c",
4236 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4237 Kolodzey and A. Hairie",
4239 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4243 journal = "J. Appl. Phys.",
4246 pages = "4631--4633",
4247 keywords = "silicon compounds; precipitation; localised modes;
4248 semiconductor epitaxial layers; infrared spectra;
4249 Fourier transform spectra; thermal stability;
4251 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4252 doi = "10.1063/1.368703",
4253 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4257 author = "R Jones and B J Coomer and P R Briddon",
4258 title = "Quantum mechanical modelling of defects in
4260 journal = "J. Phys.: Condens. Matter",
4264 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4266 notes = "ab inito dft intro, vibrational modes, c defect in
4271 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4272 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4273 J. E. Greene and S. G. Bishop",
4275 title = "Carbon incorporation pathways and lattice sites in
4276 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4277 molecular-beam epitaxy",
4280 journal = "J. Appl. Phys.",
4283 pages = "5716--5727",
4284 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4285 doi = "10.1063/1.1465122",
4286 notes = "c substitutional incorporation pathway, dft and expt",
4290 title = "Dynamic properties of interstitial carbon and
4291 carbon-carbon pair defects in silicon",
4292 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4294 journal = "Phys. Rev. B",
4297 pages = "2188--2194",
4301 doi = "10.1103/PhysRevB.55.2188",
4302 publisher = "American Physical Society",
4303 notes = "ab initio c in si and di-carbon defect, no formation
4304 energies, different migration barriers and paths",
4308 title = "Interstitial carbon and the carbon-carbon pair in
4309 silicon: Semiempirical electronic-structure
4311 author = "Matthew J. Burnard and Gary G. DeLeo",
4312 journal = "Phys. Rev. B",
4315 pages = "10217--10225",
4319 doi = "10.1103/PhysRevB.47.10217",
4320 publisher = "American Physical Society",
4321 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4322 carbon defect, formation energies",
4326 title = "Electronic structure of interstitial carbon in
4328 author = "Morgan Besson and Gary G. DeLeo",
4329 journal = "Phys. Rev. B",
4332 pages = "4028--4033",
4336 doi = "10.1103/PhysRevB.43.4028",
4337 publisher = "American Physical Society",
4341 title = "Review of atomistic simulations of surface diffusion
4342 and growth on semiconductors",
4343 journal = "Comput. Mater. Sci.",
4348 note = "Proceedings of the Workshop on Virtual Molecular Beam
4351 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4352 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4353 author = "Efthimios Kaxiras",
4354 notes = "might contain c 100 db formation energy, overview md,
4355 tight binding, first principles",
4358 @Article{kaukonen98,
4359 title = "Effect of {N} and {B} doping on the growth of {CVD}
4361 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4363 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4364 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4366 journal = "Phys. Rev. B",
4369 pages = "9965--9970",
4373 doi = "10.1103/PhysRevB.57.9965",
4374 publisher = "American Physical Society",
4375 notes = "constrained conjugate gradient relaxation technique
4380 title = "Correlation between the antisite pair and the ${DI}$
4382 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4383 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4385 journal = "Phys. Rev. B",
4392 doi = "10.1103/PhysRevB.67.155203",
4393 publisher = "American Physical Society",
4397 title = "Production and recovery of defects in Si{C} after
4398 irradiation and deformation",
4399 journal = "J. Nucl. Mater.",
4402 pages = "1803--1808",
4406 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4407 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4408 author = "J. Chen and P. Jung and H. Klein",
4412 title = "Accumulation, dynamic annealing and thermal recovery
4413 of ion-beam-induced disorder in silicon carbide",
4414 journal = "Nucl. Instrum. Methods Phys. Res. B",
4421 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4422 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4423 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4426 @Article{bockstedte03,
4427 title = "Ab initio study of the migration of intrinsic defects
4429 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4431 journal = "Phys. Rev. B",
4438 doi = "10.1103/PhysRevB.68.205201",
4439 publisher = "American Physical Society",
4440 notes = "defect migration in sic",
4444 title = "Theoretical study of vacancy diffusion and
4445 vacancy-assisted clustering of antisites in Si{C}",
4446 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4448 journal = "Phys. Rev. B",
4455 doi = "10.1103/PhysRevB.68.155208",
4456 publisher = "American Physical Society",
4460 journal = "Telegrafiya i Telefoniya bez Provodov",
4464 author = "O. V. Lossev",
4468 title = "Luminous carborundum detector and detection effect and
4469 oscillations with crystals",
4470 journal = "Philos. Mag. Series 7",
4473 pages = "1024--1044",
4475 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4476 author = "O. V. Lossev",
4480 journal = "Physik. Zeitschr.",
4484 author = "O. V. Lossev",
4488 journal = "Physik. Zeitschr.",
4492 author = "O. V. Lossev",
4496 journal = "Physik. Zeitschr.",
4500 author = "O. V. Lossev",
4504 title = "A note on carborundum",
4505 journal = "Electrical World",
4509 author = "H. J. Round",
4512 @Article{vashishath08,
4513 title = "Recent trends in silicon carbide device research",
4514 journal = "Mj. Int. J. Sci. Tech.",
4519 author = "Munish Vashishath and Ashoke K. Chatterjee",
4520 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4521 notes = "sic polytype electronic properties",
4525 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4527 title = "Growth and Properties of beta-Si{C} Single Crystals",
4530 journal = "J. Appl. Phys.",
4534 URL = "http://link.aip.org/link/?JAP/37/333/1",
4535 doi = "10.1063/1.1707837",
4536 notes = "sic melt growth",
4540 author = "A. E. van Arkel and J. H. de Boer",
4541 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4543 publisher = "WILEY-VCH Verlag GmbH",
4545 journal = "Z. Anorg. Chem.",
4548 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4549 doi = "10.1002/zaac.19251480133",
4550 notes = "van arkel apparatus",
4554 author = "K. Moers",
4556 journal = "Z. Anorg. Chem.",
4559 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4564 author = "J. T. Kendall",
4565 title = "Electronic Conduction in Silicon Carbide",
4568 journal = "J. Chem. Phys.",
4572 URL = "http://link.aip.org/link/?JCP/21/821/1",
4573 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4578 author = "J. A. Lely",
4580 journal = "Ber. Deut. Keram. Ges.",
4583 notes = "lely sublimation growth process",
4586 @Article{knippenberg63,
4587 author = "W. F. Knippenberg",
4589 journal = "Philips Res. Repts.",
4592 notes = "acheson process",
4595 @Article{hoffmann82,
4596 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4599 title = "Silicon carbide blue light emitting diodes with
4600 improved external quantum efficiency",
4603 journal = "J. Appl. Phys.",
4606 pages = "6962--6967",
4607 keywords = "light emitting diodes; silicon carbides; quantum
4608 efficiency; visible radiation; experimental data;
4609 epitaxy; fabrication; medium temperature; layers;
4610 aluminium; nitrogen; substrates; pn junctions;
4611 electroluminescence; spectra; current density;
4613 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4614 doi = "10.1063/1.330041",
4615 notes = "blue led, sublimation process",
4619 author = "Philip Neudeck",
4620 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4621 Road 44135 Cleveland OH",
4622 title = "Progress in silicon carbide semiconductor electronics
4624 journal = "Journal of Electronic Materials",
4625 publisher = "Springer Boston",
4627 keyword = "Chemistry and Materials Science",
4631 URL = "http://dx.doi.org/10.1007/BF02659688",
4632 note = "10.1007/BF02659688",
4634 notes = "sic data, advantages of 3c sic",
4637 @Article{bhatnagar93,
4638 author = "M. Bhatnagar and B. J. Baliga",
4639 journal = "Electron Devices, IEEE Transactions on",
4640 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4647 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4648 rectifiers;Si;SiC;breakdown voltages;drift region
4649 properties;output characteristics;power MOSFETs;power
4650 semiconductor devices;switching characteristics;thermal
4651 analysis;Schottky-barrier diodes;electric breakdown of
4652 solids;insulated gate field effect transistors;power
4653 transistors;semiconductor materials;silicon;silicon
4654 compounds;solid-state rectifiers;thermal analysis;",
4655 doi = "10.1109/16.199372",
4657 notes = "comparison 3c 6h sic and si devices",
4661 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4662 A. Powell and C. S. Salupo and L. G. Matus",
4663 journal = "Electron Devices, IEEE Transactions on",
4664 title = "Electrical properties of epitaxial 3{C}- and
4665 6{H}-Si{C} p-n junction diodes produced side-by-side on
4666 6{H}-Si{C} substrates",
4672 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4673 C;6H-SiC layers;6H-SiC substrates;CVD
4674 process;SiC;chemical vapor deposition;doping;electrical
4675 properties;epitaxial layers;light
4676 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4677 diodes;polytype;rectification characteristics;reverse
4678 leakage current;reverse voltages;temperature;leakage
4679 currents;power electronics;semiconductor
4680 diodes;semiconductor epitaxial layers;semiconductor
4681 growth;semiconductor materials;silicon
4682 compounds;solid-state rectifiers;substrates;vapour
4683 phase epitaxial growth;",
4684 doi = "10.1109/16.285038",
4686 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4691 author = "N. Schulze and D. L. Barrett and G. Pensl",
4693 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4694 single crystals by physical vapor transport",
4697 journal = "Appl. Phys. Lett.",
4700 pages = "1632--1634",
4701 keywords = "silicon compounds; semiconductor materials;
4702 semiconductor growth; crystal growth from vapour;
4703 photoluminescence; Hall mobility",
4704 URL = "http://link.aip.org/link/?APL/72/1632/1",
4705 doi = "10.1063/1.121136",
4706 notes = "micropipe free 6h-sic pvt growth",
4710 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4712 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4715 journal = "Appl. Phys. Lett.",
4719 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4720 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4721 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4722 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4724 URL = "http://link.aip.org/link/?APL/50/221/1",
4725 doi = "10.1063/1.97667",
4726 notes = "apb 3c-sic heteroepitaxy on si",
4729 @Article{shibahara86,
4730 title = "Surface morphology of cubic Si{C}(100) grown on
4731 Si(100) by chemical vapor deposition",
4732 journal = "J. Cryst. Growth",
4739 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4740 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4741 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4743 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4746 @Article{desjardins96,
4747 author = "P. Desjardins and J. E. Greene",
4749 title = "Step-flow epitaxial growth on two-domain surfaces",
4752 journal = "J. Appl. Phys.",
4755 pages = "1423--1434",
4756 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4757 FILM GROWTH; SURFACE STRUCTURE",
4758 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4759 doi = "10.1063/1.360980",
4760 notes = "apb model",
4764 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4766 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4767 carbonization of silicon",
4770 journal = "J. Appl. Phys.",
4773 pages = "2070--2073",
4774 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4775 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4777 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4778 doi = "10.1063/1.360184",
4779 notes = "ssmbe of sic on si, lower temperatures",
4783 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4784 {MBE} using surface superstructure",
4785 journal = "J. Cryst. Growth",
4792 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4793 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4794 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4795 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4796 notes = "gas source mbe of 3c-sic on 6h-sic",
4799 @Article{yoshinobu92,
4800 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4801 and Takashi Fuyuki and Hiroyuki Matsunami",
4803 title = "Lattice-matched epitaxial growth of single crystalline
4804 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4805 molecular beam epitaxy",
4808 journal = "Appl. Phys. Lett.",
4812 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4813 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4814 INTERFACE STRUCTURE",
4815 URL = "http://link.aip.org/link/?APL/60/824/1",
4816 doi = "10.1063/1.107430",
4817 notes = "gas source mbe of 3c-sic on 6h-sic",
4820 @Article{yoshinobu90,
4821 title = "Atomic level control in gas source {MBE} growth of
4823 journal = "J. Cryst. Growth",
4830 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4831 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4832 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4833 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4834 notes = "gas source mbe of 3c-sic on 3c-sic",
4838 title = "Atomic layer epitaxy controlled by surface
4839 superstructures in Si{C}",
4840 journal = "Thin Solid Films",
4847 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4848 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4849 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4851 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4856 title = "Microscopic mechanisms of accurate layer-by-layer
4857 growth of [beta]-Si{C}",
4858 journal = "Thin Solid Films",
4865 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4866 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4867 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4868 and S. Misawa and E. Sakuma and S. Yoshida",
4869 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4874 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4876 title = "Effects of gas flow ratio on silicon carbide thin film
4877 growth mode and polytype formation during gas-source
4878 molecular beam epitaxy",
4881 journal = "Appl. Phys. Lett.",
4884 pages = "2851--2853",
4885 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4886 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4887 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4889 URL = "http://link.aip.org/link/?APL/65/2851/1",
4890 doi = "10.1063/1.112513",
4891 notes = "gas source mbe of 6h-sic on 6h-sic",
4895 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4896 title = "Heterointerface Control and Epitaxial Growth of
4897 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4898 publisher = "WILEY-VCH Verlag",
4900 journal = "phys. status solidi (b)",
4903 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4908 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4909 journal = "J. Cryst. Growth",
4916 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4917 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4918 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4919 keywords = "Reflection high-energy electron diffraction (RHEED)",
4920 keywords = "Scanning electron microscopy (SEM)",
4921 keywords = "Silicon carbide",
4922 keywords = "Silicon",
4923 keywords = "Island growth",
4924 notes = "lower temperature, 550-700",
4927 @Article{hatayama95,
4928 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4929 on Si using hydrocarbon radicals by gas source
4930 molecular beam epitaxy",
4931 journal = "J. Cryst. Growth",
4938 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4939 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4940 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4941 and Hiroyuki Matsunami",
4945 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4946 title = "The Preference of Silicon Carbide for Growth in the
4947 Metastable Cubic Form",
4948 journal = "J. Am. Ceram. Soc.",
4951 publisher = "Blackwell Publishing Ltd",
4953 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4954 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4955 pages = "2630--2633",
4956 keywords = "silicon carbide, crystal growth, crystal structure,
4957 calculations, stability",
4959 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4960 polytype dft calculation refs",
4963 @Article{allendorf91,
4964 title = "The adsorption of {H}-atoms on polycrystalline
4965 [beta]-silicon carbide",
4966 journal = "Surf. Sci.",
4973 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4974 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4975 author = "Mark D. Allendorf and Duane A. Outka",
4976 notes = "h adsorption on 3c-sic",
4979 @Article{eaglesham93,
4980 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4981 D. P. Adams and S. M. Yalisove",
4983 title = "Effect of {H} on Si molecular-beam epitaxy",
4986 journal = "J. Appl. Phys.",
4989 pages = "6615--6618",
4990 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4991 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4992 DIFFUSION; ADSORPTION",
4993 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4994 doi = "10.1063/1.355101",
4995 notes = "h incorporation on si surface, lower surface
5000 author = "Ronald C. Newman",
5001 title = "Carbon in Crystalline Silicon",
5002 journal = "MRS Proc.",
5007 doi = "10.1557/PROC-59-403",
5008 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5009 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5013 title = "The diffusivity of carbon in silicon",
5014 journal = "J. Phys. Chem. Solids",
5021 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5022 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5023 author = "R. C. Newman and J. Wakefield",
5024 notes = "diffusivity of substitutional c in si",
5028 author = "U. Gösele",
5029 title = "The Role of Carbon and Point Defects in Silicon",
5030 journal = "MRS Proc.",
5035 doi = "10.1557/PROC-59-419",
5036 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5037 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5040 @Article{mukashev82,
5041 title = "Defects in Carbon-Implanted Silicon",
5042 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5043 Fukuoka and Haruo Saito",
5044 journal = "Japanese J. Appl. Phys.",
5046 number = "Part 1, No. 2",
5050 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5051 doi = "10.1143/JJAP.21.399",
5052 publisher = "The Japan Society of Applied Physics",
5056 title = "Convergence of supercell calculations for point
5057 defects in semiconductors: Vacancy in silicon",
5058 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5060 journal = "Phys. Rev. B",
5063 pages = "1318--1325",
5067 doi = "10.1103/PhysRevB.58.1318",
5068 publisher = "American Physical Society",
5069 notes = "convergence k point supercell size, vacancy in
5074 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5075 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5076 K{\"{o}}gler and W. Skorupa",
5078 title = "Spectroscopic characterization of phases formed by
5079 high-dose carbon ion implantation in silicon",
5082 journal = "J. Appl. Phys.",
5085 pages = "2978--2984",
5086 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5087 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5088 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5089 DEPENDENCE; PRECIPITATES; ANNEALING",
5090 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5091 doi = "10.1063/1.358714",
5094 @Article{romano-rodriguez96,
5095 title = "Detailed analysis of [beta]-Si{C} formation by high
5096 dose carbon ion implantation in silicon",
5097 journal = "Materials Science and Engineering B",
5102 note = "European Materials Research Society 1995 Spring
5103 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5104 Oxygen in Silicon and in Other Elemental
5107 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5108 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5109 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5110 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5112 keywords = "Silicon",
5113 keywords = "Ion implantation",
5114 notes = "incoherent 3c-sic precipitate",
5117 @Article{davidson75,
5118 title = "The iterative calculation of a few of the lowest
5119 eigenvalues and corresponding eigenvectors of large
5120 real-symmetric matrices",
5121 journal = "J. Comput. Phys.",
5128 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5129 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5130 author = "Ernest R. Davidson",
5134 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5136 author = "T. W. Adorno",
5137 ISBN = "978-3-518-01236-9",
5138 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5140 publisher = "Suhrkamp",