2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 notes = "dual implantation, sic prec enhanced by vacancies,
122 precipitation by interstitial and substitutional
123 carbon, both mechanisms explained + refs",
127 title = "Carbon-mediated effects in silicon and in
128 silicon-related materials",
129 journal = "Materials Chemistry and Physics",
136 doi = "DOI: 10.1016/0254-0584(95)01673-I",
137 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
138 author = "W. Skorupa and R. A. Yankov",
139 notes = "review of silicon carbon compound",
143 author = "P. S. de Laplace",
144 title = "Th\'eorie analytique des probabilit\'es",
145 series = "Oeuvres Compl\`etes de Laplace",
147 publisher = "Gauthier-Villars",
151 @Article{mattoni2007,
152 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
153 title = "{Atomistic modeling of brittleness in covalent
155 journal = "Phys. Rev. B",
161 doi = "10.1103/PhysRevB.76.224103",
162 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
163 longe(r)-range-interactions, brittle propagation of
164 fracture, more available potentials, universal energy
165 relation (uer), minimum range model (mrm)",
169 title = "Comparative study of silicon empirical interatomic
171 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
172 journal = "Phys. Rev. B",
175 pages = "2250--2279",
179 doi = "10.1103/PhysRevB.46.2250",
180 publisher = "American Physical Society",
181 notes = "comparison of classical potentials for si",
185 title = "Stress relaxation in $a-Si$ induced by ion
187 author = "H. M. Urbassek M. Koster",
188 journal = "Phys. Rev. B",
191 pages = "11219--11224",
195 doi = "10.1103/PhysRevB.62.11219",
196 publisher = "American Physical Society",
197 notes = "virial derivation for 3-body tersoff potential",
200 @Article{breadmore99,
201 title = "Direct simulation of ion-beam-induced stressing and
202 amorphization of silicon",
203 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
204 journal = "Phys. Rev. B",
207 pages = "12610--12616",
211 doi = "10.1103/PhysRevB.60.12610",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
217 title = "First-Principles Calculation of Stress",
218 author = "O. H. Nielsen and Richard M. Martin",
219 journal = "Phys. Rev. Lett.",
226 doi = "10.1103/PhysRevLett.50.697",
227 publisher = "American Physical Society",
228 notes = "generalization of virial theorem",
232 title = "Quantum-mechanical theory of stress and force",
233 author = "O. H. Nielsen and Richard M. Martin",
234 journal = "Phys. Rev. B",
237 pages = "3780--3791",
241 doi = "10.1103/PhysRevB.32.3780",
242 publisher = "American Physical Society",
243 notes = "dft virial stress and forces",
247 author = "Henri Moissan",
248 title = "Nouvelles recherches sur la météorité de Cañon
250 journal = "Comptes rendus de l'Académie des Sciences",
257 author = "Y. S. Park",
258 title = "Si{C} Materials and Devices",
259 publisher = "Academic Press",
260 address = "San Diego",
265 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
266 Calvin H. Carter Jr. and D. Asbury",
267 title = "Si{C} Seeded Boule Growth",
268 journal = "Materials Science Forum",
272 notes = "modified lely process, micropipes",
276 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
277 Thermodynamical Properties of Lennard-Jones Molecules",
278 author = "Loup Verlet",
279 journal = "Phys. Rev.",
285 doi = "10.1103/PhysRev.159.98",
286 publisher = "American Physical Society",
287 notes = "velocity verlet integration algorithm equation of
291 @Article{berendsen84,
292 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
293 Gunsteren and A. DiNola and J. R. Haak",
295 title = "Molecular dynamics with coupling to an external bath",
298 journal = "J. Chem. Phys.",
301 pages = "3684--3690",
302 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
303 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
304 URL = "http://link.aip.org/link/?JCP/81/3684/1",
305 doi = "10.1063/1.448118",
306 notes = "berendsen thermostat barostat",
310 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
312 title = "Molecular dynamics determination of defect energetics
313 in beta -Si{C} using three representative empirical
315 journal = "Modell. Simul. Mater. Sci. Eng.",
319 URL = "http://stacks.iop.org/0965-0393/3/615",
320 notes = "comparison of tersoff, pearson and eam for defect
321 energetics in sic; (m)eam parameters for sic",
326 title = "Relationship between the embedded-atom method and
328 author = "Donald W. Brenner",
329 journal = "Phys. Rev. Lett.",
336 doi = "10.1103/PhysRevLett.63.1022",
337 publisher = "American Physical Society",
338 notes = "relation of tersoff and eam potential",
342 title = "Molecular-dynamics study of self-interstitials in
344 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
345 journal = "Phys. Rev. B",
348 pages = "9552--9558",
352 doi = "10.1103/PhysRevB.35.9552",
353 publisher = "American Physical Society",
354 notes = "selft-interstitials in silicon, stillinger-weber,
355 calculation of defect formation energy, defect
360 title = "Extended interstitials in silicon and germanium",
361 author = "H. R. Schober",
362 journal = "Phys. Rev. B",
365 pages = "13013--13015",
369 doi = "10.1103/PhysRevB.39.13013",
370 publisher = "American Physical Society",
371 notes = "stillinger-weber silicon 110 stable and metastable
372 dumbbell configuration",
376 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
377 Defect accumulation, topological features, and
379 author = "F. Gao and W. J. Weber",
380 journal = "Phys. Rev. B",
387 doi = "10.1103/PhysRevB.66.024106",
388 publisher = "American Physical Society",
389 notes = "sic intro, si cascade in 3c-sic, amorphization,
390 tersoff modified, pair correlation of amorphous sic, md
394 @Article{devanathan98,
395 title = "Computer simulation of a 10 ke{V} Si displacement
397 journal = "Nucl. Instrum. Methods Phys. Res. B",
403 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
404 author = "R. Devanathan and W. J. Weber and T. Diaz de la
406 notes = "modified tersoff short range potential, ab initio
410 @Article{devanathan98_2,
411 title = "Displacement threshold energies in [beta]-Si{C}",
412 journal = "J. Nucl. Mater.",
418 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
419 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
421 notes = "modified tersoff, ab initio, combined ab initio
425 @Article{kitabatake00,
426 title = "Si{C}/Si heteroepitaxial growth",
427 author = "M. Kitabatake",
428 journal = "Thin Solid Films",
433 notes = "md simulation, sic si heteroepitaxy, mbe",
437 title = "Intrinsic point defects in crystalline silicon:
438 Tight-binding molecular dynamics studies of
439 self-diffusion, interstitial-vacancy recombination, and
441 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
443 journal = "Phys. Rev. B",
446 pages = "14279--14289",
450 doi = "10.1103/PhysRevB.55.14279",
451 publisher = "American Physical Society",
452 notes = "si self interstitial, diffusion, tbmd",
456 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
459 title = "A kinetic Monte--Carlo study of the effective
460 diffusivity of the silicon self-interstitial in the
461 presence of carbon and boron",
464 journal = "J. Appl. Phys.",
467 pages = "1963--1967",
468 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
469 CARBON ADDITIONS; BORON ADDITIONS; elemental
470 semiconductors; self-diffusion",
471 URL = "http://link.aip.org/link/?JAP/84/1963/1",
472 doi = "10.1063/1.368328",
473 notes = "kinetic monte carlo of si self interstitial
478 title = "Barrier to Migration of the Silicon
480 author = "Y. Bar-Yam and J. D. Joannopoulos",
481 journal = "Phys. Rev. Lett.",
484 pages = "1129--1132",
488 doi = "10.1103/PhysRevLett.52.1129",
489 publisher = "American Physical Society",
490 notes = "si self-interstitial migration barrier",
493 @Article{bar-yam84_2,
494 title = "Electronic structure and total-energy migration
495 barriers of silicon self-interstitials",
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. B",
500 pages = "1844--1852",
504 doi = "10.1103/PhysRevB.30.1844",
505 publisher = "American Physical Society",
509 title = "First-principles calculations of self-diffusion
510 constants in silicon",
511 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
512 and D. B. Laks and W. Andreoni and S. T. Pantelides",
513 journal = "Phys. Rev. Lett.",
516 pages = "2435--2438",
520 doi = "10.1103/PhysRevLett.70.2435",
521 publisher = "American Physical Society",
522 notes = "si self int diffusion by ab initio md, formation
523 entropy calculations",
527 title = "Tight-binding theory of native point defects in
529 author = "L. Colombo",
530 journal = "Annu. Rev. Mater. Res.",
535 doi = "10.1146/annurev.matsci.32.111601.103036",
536 publisher = "Annual Reviews",
537 notes = "si self interstitial, tbmd, virial stress",
540 @Article{al-mushadani03,
541 title = "Free-energy calculations of intrinsic point defects in
543 author = "O. K. Al-Mushadani and R. J. Needs",
544 journal = "Phys. Rev. B",
551 doi = "10.1103/PhysRevB.68.235205",
552 publisher = "American Physical Society",
553 notes = "formation energies of intrinisc point defects in
554 silicon, si self interstitials, free energy",
557 @Article{goedecker02,
558 title = "A Fourfold Coordinated Point Defect in Silicon",
559 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
560 journal = "Phys. Rev. Lett.",
567 doi = "10.1103/PhysRevLett.88.235501",
568 publisher = "American Physical Society",
569 notes = "first time ffcd, fourfold coordinated point defect in
574 title = "Ab initio molecular dynamics simulation of
575 self-interstitial diffusion in silicon",
576 author = "Beat Sahli and Wolfgang Fichtner",
577 journal = "Phys. Rev. B",
584 doi = "10.1103/PhysRevB.72.245210",
585 publisher = "American Physical Society",
586 notes = "si self int, diffusion, barrier height, voronoi
591 title = "Ab initio calculations of the interaction between
592 native point defects in silicon",
593 journal = "Mater. Sci. Eng., B",
598 note = "EMRS 2005, Symposium D - Materials Science and Device
599 Issues for Future Technologies",
601 doi = "DOI: 10.1016/j.mseb.2005.08.072",
602 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
603 author = "G. Hobler and G. Kresse",
604 notes = "vasp intrinsic si defect interaction study, capture
609 title = "Ab initio study of self-diffusion in silicon over a
610 wide temperature range: Point defect states and
611 migration mechanisms",
612 author = "Shangyi Ma and Shaoqing Wang",
613 journal = "Phys. Rev. B",
620 doi = "10.1103/PhysRevB.81.193203",
621 publisher = "American Physical Society",
622 notes = "si self interstitial diffusion + refs",
626 title = "Atomistic simulations on the thermal stability of the
627 antisite pair in 3{C}- and 4{H}-Si{C}",
628 author = "M. Posselt and F. Gao and W. J. Weber",
629 journal = "Phys. Rev. B",
636 doi = "10.1103/PhysRevB.73.125206",
637 publisher = "American Physical Society",
641 title = "Correlation between self-diffusion in Si and the
642 migration mechanisms of vacancies and
643 self-interstitials: An atomistic study",
644 author = "M. Posselt and F. Gao and H. Bracht",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.78.035208",
653 publisher = "American Physical Society",
654 notes = "si self-interstitial and vacancy diffusion, stillinger
659 title = "Ab initio and empirical-potential studies of defect
660 properties in $3{C}-Si{C}$",
661 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
663 journal = "Phys. Rev. B",
670 doi = "10.1103/PhysRevB.64.245208",
671 publisher = "American Physical Society",
672 notes = "defects in 3c-sic",
676 title = "Empirical potential approach for defect properties in
678 journal = "Nucl. Instrum. Methods Phys. Res. B",
685 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
686 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
687 author = "Fei Gao and William J. Weber",
688 keywords = "Empirical potential",
689 keywords = "Defect properties",
690 keywords = "Silicon carbide",
691 keywords = "Computer simulation",
692 notes = "sic potential, brenner type, like erhart/albe",
696 title = "Atomistic study of intrinsic defect migration in
698 author = "Fei Gao and William J. Weber and M. Posselt and V.
700 journal = "Phys. Rev. B",
707 doi = "10.1103/PhysRevB.69.245205",
708 publisher = "American Physical Society",
709 notes = "defect migration in sic",
713 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
716 title = "Ab Initio atomic simulations of antisite pair recovery
717 in cubic silicon carbide",
720 journal = "Appl. Phys. Lett.",
726 keywords = "ab initio calculations; silicon compounds; antisite
727 defects; wide band gap semiconductors; molecular
728 dynamics method; density functional theory;
729 electron-hole recombination; photoluminescence;
730 impurities; diffusion",
731 URL = "http://link.aip.org/link/?APL/90/221915/1",
732 doi = "10.1063/1.2743751",
735 @Article{mattoni2002,
736 title = "Self-interstitial trapping by carbon complexes in
737 crystalline silicon",
738 author = "A. Mattoni and F. Bernardini and L. Colombo",
739 journal = "Phys. Rev. B",
746 doi = "10.1103/PhysRevB.66.195214",
747 publisher = "American Physical Society",
748 notes = "c in c-si, diffusion, interstitial configuration +
749 links, interaction of carbon and silicon interstitials,
750 tersoff suitability",
754 title = "Calculations of Silicon Self-Interstitial Defects",
755 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
757 journal = "Phys. Rev. Lett.",
760 pages = "2351--2354",
764 doi = "10.1103/PhysRevLett.83.2351",
765 publisher = "American Physical Society",
766 notes = "nice images of the defects, si defect overview +
771 title = "Identification of the migration path of interstitial
773 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
774 journal = "Phys. Rev. B",
777 pages = "7439--7442",
781 doi = "10.1103/PhysRevB.50.7439",
782 publisher = "American Physical Society",
783 notes = "carbon interstitial migration path shown, 001 c-si
788 title = "Theory of carbon-carbon pairs in silicon",
789 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
790 journal = "Phys. Rev. B",
793 pages = "9845--9850",
797 doi = "10.1103/PhysRevB.58.9845",
798 publisher = "American Physical Society",
799 notes = "c_i c_s pair configuration, theoretical results",
803 title = "Bistable interstitial-carbon--substitutional-carbon
805 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
807 journal = "Phys. Rev. B",
810 pages = "5765--5783",
814 doi = "10.1103/PhysRevB.42.5765",
815 publisher = "American Physical Society",
816 notes = "c_i c_s pair configuration, experimental results",
820 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
821 Shifeng Lu and Xiang-Yang Liu",
823 title = "Ab initio modeling and experimental study of {C}--{B}
827 journal = "Appl. Phys. Lett.",
831 keywords = "silicon; boron; carbon; elemental semiconductors;
832 impurity-defect interactions; ab initio calculations;
833 secondary ion mass spectra; diffusion; interstitials",
834 URL = "http://link.aip.org/link/?APL/80/52/1",
835 doi = "10.1063/1.1430505",
836 notes = "c-c 100 split, lower as a and b states of capaz",
840 title = "Ab initio investigation of carbon-related defects in
842 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
844 journal = "Phys. Rev. B",
847 pages = "12554--12557",
851 doi = "10.1103/PhysRevB.47.12554",
852 publisher = "American Physical Society",
853 notes = "c interstitials in crystalline silicon",
857 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
859 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
860 Sokrates T. Pantelides",
861 journal = "Phys. Rev. Lett.",
864 pages = "1814--1817",
868 doi = "10.1103/PhysRevLett.52.1814",
869 publisher = "American Physical Society",
870 notes = "microscopic theory diffusion silicon dft migration
875 title = "Unified Approach for Molecular Dynamics and
876 Density-Functional Theory",
877 author = "R. Car and M. Parrinello",
878 journal = "Phys. Rev. Lett.",
881 pages = "2471--2474",
885 doi = "10.1103/PhysRevLett.55.2471",
886 publisher = "American Physical Society",
887 notes = "car parrinello method, dft and md",
891 title = "Short-range order, bulk moduli, and physical trends in
892 c-$Si1-x$$Cx$ alloys",
893 author = "P. C. Kelires",
894 journal = "Phys. Rev. B",
897 pages = "8784--8787",
901 doi = "10.1103/PhysRevB.55.8784",
902 publisher = "American Physical Society",
903 notes = "c strained si, montecarlo md, bulk moduli, next
908 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
909 Application to the $Si1-x-yGexCy$ System",
910 author = "P. C. Kelires",
911 journal = "Phys. Rev. Lett.",
914 pages = "1114--1117",
918 doi = "10.1103/PhysRevLett.75.1114",
919 publisher = "American Physical Society",
920 notes = "mc md, strain compensation in si ge by c insertion",
924 title = "Low temperature electron irradiation of silicon
926 journal = "Solid State Communications",
933 doi = "DOI: 10.1016/0038-1098(70)90074-8",
934 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
935 author = "A. R. Bean and R. C. Newman",
939 title = "{EPR} Observation of the Isolated Interstitial Carbon
941 author = "G. D. Watkins and K. L. Brower",
942 journal = "Phys. Rev. Lett.",
945 pages = "1329--1332",
949 doi = "10.1103/PhysRevLett.36.1329",
950 publisher = "American Physical Society",
951 notes = "epr observations of 100 interstitial carbon atom in
956 title = "{EPR} identification of the single-acceptor state of
957 interstitial carbon in silicon",
958 author = "L. W. Song and G. D. Watkins",
959 journal = "Phys. Rev. B",
962 pages = "5759--5764",
966 doi = "10.1103/PhysRevB.42.5759",
967 publisher = "American Physical Society",
968 notes = "carbon diffusion in silicon",
972 author = "A K Tipping and R C Newman",
973 title = "The diffusion coefficient of interstitial carbon in
975 journal = "Semicond. Sci. Technol.",
979 URL = "http://stacks.iop.org/0268-1242/2/315",
981 notes = "diffusion coefficient of carbon interstitials in
986 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
989 title = "Annealing behavior of Me{V} implanted carbon in
993 journal = "Journal of Applied Physics",
996 pages = "3815--3820",
997 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
998 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1000 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1001 doi = "10.1063/1.354474",
1002 notes = "c at interstitial location for rt implantation in si",
1006 title = "Carbon incorporation into Si at high concentrations by
1007 ion implantation and solid phase epitaxy",
1008 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1009 Picraux and J. K. Watanabe and J. W. Mayer",
1010 journal = "J. Appl. Phys.",
1015 doi = "10.1063/1.360806",
1016 notes = "strained silicon, carbon supersaturation",
1019 @Article{laveant2002,
1020 title = "Epitaxy of carbon-rich silicon with {MBE}",
1021 journal = "Mater. Sci. Eng., B",
1027 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1028 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1029 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1031 notes = "low c in si, tensile stress to compensate compressive
1032 stress, avoid sic precipitation",
1036 title = "The formation of swirl defects in silicon by
1037 agglomeration of self-interstitials",
1038 journal = "Journal of Crystal Growth",
1045 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1046 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1047 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1048 notes = "b-swirl: si + c interstitial agglomerates, c-si
1053 title = "Microdefects in silicon and their relation to point
1055 journal = "Journal of Crystal Growth",
1062 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1063 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1064 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1065 notes = "swirl review",
1069 author = "P. Werner and S. Eichler and G. Mariani and R.
1070 K{\"{o}}gler and W. Skorupa",
1071 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1072 silicon by transmission electron microscopy",
1075 journal = "Appl. Phys. Lett.",
1079 keywords = "silicon; ion implantation; carbon; crystal defects;
1080 transmission electron microscopy; annealing; positron
1081 annihilation; secondary ion mass spectroscopy; buried
1082 layers; precipitation",
1083 URL = "http://link.aip.org/link/?APL/70/252/1",
1084 doi = "10.1063/1.118381",
1085 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1089 @InProceedings{werner96,
1090 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1092 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1093 International Conference on",
1094 title = "{TEM} investigation of {C}-Si defects in carbon
1101 doi = "10.1109/IIT.1996.586497",
1103 notes = "c-si agglomerates dumbbells",
1107 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1110 title = "Carbon diffusion in silicon",
1113 journal = "Appl. Phys. Lett.",
1116 pages = "2465--2467",
1117 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1118 secondary ion mass spectra; semiconductor epitaxial
1119 layers; annealing; impurity-defect interactions;
1120 impurity distribution",
1121 URL = "http://link.aip.org/link/?APL/73/2465/1",
1122 doi = "10.1063/1.122483",
1123 notes = "c diffusion in si, kick out mechnism",
1127 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1129 title = "Self-interstitial enhanced carbon diffusion in
1133 journal = "Applied Physics Letters",
1137 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1138 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1139 TEMPERATURE; IMPURITIES",
1140 URL = "http://link.aip.org/link/?APL/45/268/1",
1141 doi = "10.1063/1.95167",
1142 notes = "c diffusion due to si self-interstitials",
1146 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1147 Doyle and S. T. Picraux and J. W. Mayer",
1149 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1152 journal = "Applied Physics Letters",
1155 pages = "2786--2788",
1156 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1157 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1158 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1159 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1160 EPITAXY; AMORPHIZATION",
1161 URL = "http://link.aip.org/link/?APL/63/2786/1",
1162 doi = "10.1063/1.110334",
1166 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1167 Picraux and J. K. Watanabe and J. W. Mayer",
1169 title = "Precipitation and relaxation in strained Si[sub 1 -
1170 y]{C}[sub y]/Si heterostructures",
1173 journal = "J. Appl. Phys.",
1176 pages = "3656--3668",
1177 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1178 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1179 doi = "10.1063/1.357429",
1180 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1181 precipitation by substitutional carbon, coherent prec,
1182 coherent to incoherent transition strain vs interface
1187 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1190 title = "Investigation of the high temperature behavior of
1191 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1194 journal = "J. Appl. Phys.",
1197 pages = "1934--1937",
1198 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1199 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1200 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1201 TEMPERATURE RANGE 04001000 K",
1202 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1203 doi = "10.1063/1.358826",
1207 title = "Prospects for device implementation of wide band gap
1209 author = "J. H. Edgar",
1210 journal = "J. Mater. Res.",
1215 doi = "10.1557/JMR.1992.0235",
1216 notes = "properties wide band gap semiconductor, sic
1220 @Article{zirkelbach2007,
1221 title = "Monte Carlo simulation study of a selforganisation
1222 process leading to ordered precipitate structures",
1223 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1225 journal = "Nucl. Instr. and Meth. B",
1232 doi = "doi:10.1016/j.nimb.2006.12.118",
1233 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1237 @Article{zirkelbach2006,
1238 title = "Monte-Carlo simulation study of the self-organization
1239 of nanometric amorphous precipitates in regular arrays
1240 during ion irradiation",
1241 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1243 journal = "Nucl. Instr. and Meth. B",
1250 doi = "doi:10.1016/j.nimb.2005.08.162",
1251 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1255 @Article{zirkelbach2005,
1256 title = "Modelling of a selforganization process leading to
1257 periodic arrays of nanometric amorphous precipitates by
1259 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1261 journal = "Comp. Mater. Sci.",
1268 doi = "doi:10.1016/j.commatsci.2004.12.016",
1269 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1273 @Article{zirkelbach09,
1274 title = "Molecular dynamics simulation of defect formation and
1275 precipitation in heavily carbon doped silicon",
1276 journal = "Mater. Sci. Eng., B",
1281 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1282 Silicon Materials Research for Electronic and
1283 Photovoltaic Applications",
1285 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1286 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1287 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1289 keywords = "Silicon",
1290 keywords = "Carbon",
1291 keywords = "Silicon carbide",
1292 keywords = "Nucleation",
1293 keywords = "Defect formation",
1294 keywords = "Molecular dynamics simulations",
1297 @Article{zirkelbach10,
1298 title = "Defects in carbon implanted silicon calculated by
1299 classical potentials and first-principles methods",
1300 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1301 K. N. Lindner and W. G. Schmidt and E. Rauls",
1302 journal = "Phys. Rev. B",
1309 doi = "10.1103/PhysRevB.82.094110",
1310 publisher = "American Physical Society",
1313 @Article{zirkelbach11a,
1314 title = "First principles study of defects in carbon implanted
1316 journal = "to be published",
1321 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1322 and W. G. Schmidt and E. Rauls",
1325 @Article{zirkelbach11b,
1327 journal = "to be published",
1332 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1333 K. N. Lindner and W. G. Schmidt and E. Rauls",
1337 author = "J. K. N. Lindner and A. Frohnwieser and B.
1338 Rauschenbach and B. Stritzker",
1339 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1341 journal = "MRS Online Proceedings Library",
1346 doi = "10.1557/PROC-354-171",
1347 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1348 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1349 notes = "first time ibs at moderate temperatures",
1353 title = "Formation of buried epitaxial silicon carbide layers
1354 in silicon by ion beam synthesis",
1355 journal = "Materials Chemistry and Physics",
1362 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1363 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1364 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1365 Götz and A. Frohnwieser and B. Rauschenbach and B.
1367 notes = "dose window",
1370 @Article{calcagno96,
1371 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1373 journal = "Nuclear Instruments and Methods in Physics Research
1374 Section B: Beam Interactions with Materials and Atoms",
1379 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1380 New Trends in Ion Beam Processing of Materials",
1382 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1383 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1384 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1385 Grimaldi and P. Musumeci",
1386 notes = "dose window, graphitic bonds",
1390 title = "Mechanisms of Si{C} Formation in the Ion Beam
1391 Synthesis of 3{C}-Si{C} Layers in Silicon",
1392 journal = "Materials Science Forum",
1397 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1398 URL = "http://www.scientific.net/MSF.264-268.215",
1399 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1400 notes = "intermediate temperature for sharp interface + good
1405 title = "Controlling the density distribution of Si{C}
1406 nanocrystals for the ion beam synthesis of buried Si{C}
1408 journal = "Nucl. Instrum. Methods Phys. Res. B",
1415 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1416 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1417 author = "J. K. N. Lindner and B. Stritzker",
1418 notes = "two-step implantation process",
1421 @Article{lindner99_2,
1422 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1424 journal = "Nucl. Instrum. Methods Phys. Res. B",
1430 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1431 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1432 author = "J. K. N. Lindner and B. Stritzker",
1433 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1437 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1438 Basic physical processes",
1439 journal = "Nucl. Instrum. Methods Phys. Res. B",
1446 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1447 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1448 author = "J{\"{o}}rg K. N. Lindner",
1452 title = "High-dose carbon implantations into silicon:
1453 fundamental studies for new technological tricks",
1454 author = "J. K. N. Lindner",
1455 journal = "Appl. Phys. A",
1459 doi = "10.1007/s00339-002-2062-8",
1460 notes = "ibs, burried sic layers",
1464 title = "On the balance between ion beam induced nanoparticle
1465 formation and displacive precipitate resolution in the
1467 journal = "Mater. Sci. Eng., C",
1472 note = "Current Trends in Nanoscience - from Materials to
1475 doi = "DOI: 10.1016/j.msec.2005.09.099",
1476 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1477 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1479 notes = "c int diffusion barrier",
1483 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1484 application in buffer layer for Ga{N} epitaxial
1486 journal = "Applied Surface Science",
1491 note = "APHYS'03 Special Issue",
1493 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1494 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1495 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1496 and S. Nishio and K. Yasuda and Y. Ishigami",
1497 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1500 @Article{yamamoto04,
1501 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1502 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1503 implantation into Si(1Â 1Â 1) substrate",
1504 journal = "Journal of Crystal Growth",
1509 note = "Proceedings of the 11th Biennial (US) Workshop on
1510 Organometallic Vapor Phase Epitaxy (OMVPE)",
1512 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1513 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1514 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1515 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1516 notes = "gan on 3c-sic",
1520 title = "Substrates for gallium nitride epitaxy",
1521 journal = "Materials Science and Engineering: R: Reports",
1528 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1529 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1530 author = "L. Liu and J. H. Edgar",
1531 notes = "gan substrates",
1534 @Article{takeuchi91,
1535 title = "Growth of single crystalline Ga{N} film on Si
1536 substrate using 3{C}-Si{C} as an intermediate layer",
1537 journal = "Journal of Crystal Growth",
1544 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1545 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1546 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1547 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1548 notes = "gan on 3c-sic (first time?)",
1552 author = "B. J. Alder and T. E. Wainwright",
1553 title = "Phase Transition for a Hard Sphere System",
1556 journal = "J. Chem. Phys.",
1559 pages = "1208--1209",
1560 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1561 doi = "10.1063/1.1743957",
1565 author = "B. J. Alder and T. E. Wainwright",
1566 title = "Studies in Molecular Dynamics. {I}. General Method",
1569 journal = "J. Chem. Phys.",
1573 URL = "http://link.aip.org/link/?JCP/31/459/1",
1574 doi = "10.1063/1.1730376",
1577 @Article{tersoff_si1,
1578 title = "New empirical model for the structural properties of
1580 author = "J. Tersoff",
1581 journal = "Phys. Rev. Lett.",
1588 doi = "10.1103/PhysRevLett.56.632",
1589 publisher = "American Physical Society",
1592 @Article{tersoff_si2,
1593 title = "New empirical approach for the structure and energy of
1595 author = "J. Tersoff",
1596 journal = "Phys. Rev. B",
1599 pages = "6991--7000",
1603 doi = "10.1103/PhysRevB.37.6991",
1604 publisher = "American Physical Society",
1607 @Article{tersoff_si3,
1608 title = "Empirical interatomic potential for silicon with
1609 improved elastic properties",
1610 author = "J. Tersoff",
1611 journal = "Phys. Rev. B",
1614 pages = "9902--9905",
1618 doi = "10.1103/PhysRevB.38.9902",
1619 publisher = "American Physical Society",
1623 title = "Empirical Interatomic Potential for Carbon, with
1624 Applications to Amorphous Carbon",
1625 author = "J. Tersoff",
1626 journal = "Phys. Rev. Lett.",
1629 pages = "2879--2882",
1633 doi = "10.1103/PhysRevLett.61.2879",
1634 publisher = "American Physical Society",
1638 title = "Modeling solid-state chemistry: Interatomic potentials
1639 for multicomponent systems",
1640 author = "J. Tersoff",
1641 journal = "Phys. Rev. B",
1644 pages = "5566--5568",
1648 doi = "10.1103/PhysRevB.39.5566",
1649 publisher = "American Physical Society",
1653 title = "Carbon defects and defect reactions in silicon",
1654 author = "J. Tersoff",
1655 journal = "Phys. Rev. Lett.",
1658 pages = "1757--1760",
1662 doi = "10.1103/PhysRevLett.64.1757",
1663 publisher = "American Physical Society",
1667 title = "Point defects and dopant diffusion in silicon",
1668 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1669 journal = "Rev. Mod. Phys.",
1676 doi = "10.1103/RevModPhys.61.289",
1677 publisher = "American Physical Society",
1681 title = "Silicon carbide: synthesis and processing",
1682 journal = "Nucl. Instrum. Methods Phys. Res. B",
1687 note = "Radiation Effects in Insulators",
1689 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1690 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1691 author = "W. Wesch",
1695 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1696 Palmour and J. A. Edmond",
1697 journal = "Proceedings of the IEEE",
1698 title = "Thin film deposition and microelectronic and
1699 optoelectronic device fabrication and characterization
1700 in monocrystalline alpha and beta silicon carbide",
1706 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1707 diode;SiC;dry etching;electrical
1708 contacts;etching;impurity incorporation;optoelectronic
1709 device fabrication;solid-state devices;surface
1710 chemistry;Schottky effect;Schottky gate field effect
1711 transistors;Schottky-barrier
1712 diodes;etching;heterojunction bipolar
1713 transistors;insulated gate field effect
1714 transistors;light emitting diodes;semiconductor
1715 materials;semiconductor thin films;silicon compounds;",
1716 doi = "10.1109/5.90132",
1718 notes = "sic growth methods",
1722 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1723 Lin and B. Sverdlov and M. Burns",
1725 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1726 ZnSe-based semiconductor device technologies",
1729 journal = "J. Appl. Phys.",
1732 pages = "1363--1398",
1733 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1734 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1735 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1737 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1738 doi = "10.1063/1.358463",
1739 notes = "sic intro, properties",
1743 author = "Noch Unbekannt",
1744 title = "How to find references",
1745 journal = "Journal of Applied References",
1752 title = "Atomistic simulation of thermomechanical properties of
1754 author = "Meijie Tang and Sidney Yip",
1755 journal = "Phys. Rev. B",
1758 pages = "15150--15159",
1761 doi = "10.1103/PhysRevB.52.15150",
1762 notes = "modified tersoff, scale cutoff with volume, promising
1763 tersoff reparametrization",
1764 publisher = "American Physical Society",
1768 title = "Silicon carbide as a new {MEMS} technology",
1769 journal = "Sensors and Actuators A: Physical",
1775 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1776 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1777 author = "Pasqualina M. Sarro",
1779 keywords = "Silicon carbide",
1780 keywords = "Micromachining",
1781 keywords = "Mechanical stress",
1785 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1786 semiconductor for high-temperature applications: {A}
1788 journal = "Solid-State Electronics",
1791 pages = "1409--1422",
1794 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1795 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1796 author = "J. B. Casady and R. W. Johnson",
1797 notes = "sic intro",
1800 @Article{giancarli98,
1801 title = "Design requirements for Si{C}/Si{C} composites
1802 structural material in fusion power reactor blankets",
1803 journal = "Fusion Engineering and Design",
1809 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1810 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1811 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1812 Marois and N. B. Morley and J. F. Salavy",
1816 title = "Electrical and optical characterization of Si{C}",
1817 journal = "Physica B: Condensed Matter",
1823 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1824 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1825 author = "G. Pensl and W. J. Choyke",
1829 title = "Investigation of growth processes of ingots of silicon
1830 carbide single crystals",
1831 journal = "J. Cryst. Growth",
1836 notes = "modified lely process",
1838 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1839 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1840 author = "Yu. M. Tairov and V. F. Tsvetkov",
1844 title = "General principles of growing large-size single
1845 crystals of various silicon carbide polytypes",
1846 journal = "Journal of Crystal Growth",
1853 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1854 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1855 author = "Yu.M. Tairov and V. F. Tsvetkov",
1859 title = "Si{C} boule growth by sublimation vapor transport",
1860 journal = "Journal of Crystal Growth",
1867 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1868 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1869 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1870 R. H. Hopkins and W. J. Choyke",
1874 title = "Growth of large Si{C} single crystals",
1875 journal = "Journal of Crystal Growth",
1882 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1883 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1884 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1885 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1890 title = "Control of polytype formation by surface energy
1891 effects during the growth of Si{C} monocrystals by the
1892 sublimation method",
1893 journal = "Journal of Crystal Growth",
1900 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1901 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1902 author = "R. A. Stein and P. Lanig",
1903 notes = "6h and 4h, sublimation technique",
1907 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1910 title = "Production of large-area single-crystal wafers of
1911 cubic Si{C} for semiconductor devices",
1914 journal = "Appl. Phys. Lett.",
1918 keywords = "silicon carbides; layers; chemical vapor deposition;
1920 URL = "http://link.aip.org/link/?APL/42/460/1",
1921 doi = "10.1063/1.93970",
1922 notes = "cvd of 3c-sic on si, sic buffer layer",
1926 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1927 and Hiroyuki Matsunami",
1929 title = "Epitaxial growth and electric characteristics of cubic
1933 journal = "J. Appl. Phys.",
1936 pages = "4889--4893",
1937 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1938 doi = "10.1063/1.338355",
1939 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1944 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1946 title = "Growth and Characterization of Cubic Si{C}
1947 Single-Crystal Films on Si",
1950 journal = "Journal of The Electrochemical Society",
1953 pages = "1558--1565",
1954 keywords = "semiconductor materials; silicon compounds; carbon
1955 compounds; crystal morphology; electron mobility",
1956 URL = "http://link.aip.org/link/?JES/134/1558/1",
1957 doi = "10.1149/1.2100708",
1958 notes = "blue light emitting diodes (led)",
1961 @Article{powell87_2,
1962 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
1963 C. M. Chorey and T. T. Cheng and P. Pirouz",
1965 title = "Improved beta-Si{C} heteroepitaxial films using
1966 off-axis Si substrates",
1969 journal = "Applied Physics Letters",
1973 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
1974 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
1975 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
1976 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
1977 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
1978 URL = "http://link.aip.org/link/?APL/51/823/1",
1979 doi = "10.1063/1.98824",
1980 notes = "improved sic on off-axis si substrates, reduced apbs",
1984 title = "Crystal growth of Si{C} by step-controlled epitaxy",
1985 journal = "Journal of Crystal Growth",
1992 doi = "DOI: 10.1016/0022-0248(90)90013-B",
1993 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1994 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
1996 notes = "step-controlled epitaxy model",
2000 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2001 and Hiroyuki Matsunami",
2002 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2006 journal = "J. Appl. Phys.",
2010 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2011 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2013 URL = "http://link.aip.org/link/?JAP/73/726/1",
2014 doi = "10.1063/1.353329",
2015 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2018 @Article{powell90_2,
2019 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2020 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2021 Yoganathan and J. Yang and P. Pirouz",
2023 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2024 vicinal (0001) 6{H}-Si{C} wafers",
2027 journal = "Applied Physics Letters",
2030 pages = "1442--1444",
2031 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2032 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2033 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2034 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2035 URL = "http://link.aip.org/link/?APL/56/1442/1",
2036 doi = "10.1063/1.102492",
2037 notes = "cvd of 6h-sic on 6h-sic",
2041 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2043 title = "Chemical vapor deposition and characterization of
2044 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2048 journal = "Journal of Applied Physics",
2051 pages = "2672--2679",
2052 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2053 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2054 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2055 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2056 PHASE EPITAXY; CRYSTAL ORIENTATION",
2057 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2058 doi = "10.1063/1.341608",
2062 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2063 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2064 Yoganathan and J. Yang and P. Pirouz",
2066 title = "Growth of improved quality 3{C}-Si{C} films on
2067 6{H}-Si{C} substrates",
2070 journal = "Appl. Phys. Lett.",
2073 pages = "1353--1355",
2074 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2075 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2076 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2078 URL = "http://link.aip.org/link/?APL/56/1353/1",
2079 doi = "10.1063/1.102512",
2080 notes = "cvd of 3c-sic on 6h-sic",
2084 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2085 Rozgonyi and K. L. More",
2087 title = "An examination of double positioning boundaries and
2088 interface misfit in beta-Si{C} films on alpha-Si{C}
2092 journal = "Journal of Applied Physics",
2095 pages = "2645--2650",
2096 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2097 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2098 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2099 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2100 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2101 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2102 doi = "10.1063/1.341004",
2106 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2107 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2108 and W. J. Choyke and L. Clemen and M. Yoganathan",
2110 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2111 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2114 journal = "Applied Physics Letters",
2118 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2119 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2120 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2121 URL = "http://link.aip.org/link/?APL/59/333/1",
2122 doi = "10.1063/1.105587",
2126 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2127 Thokala and M. J. Loboda",
2129 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2130 films on 6{H}-Si{C} by chemical vapor deposition from
2134 journal = "J. Appl. Phys.",
2137 pages = "1271--1273",
2138 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2139 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2141 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2142 doi = "10.1063/1.360368",
2143 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2147 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2148 properties of its p-n junction",
2149 journal = "Journal of Crystal Growth",
2156 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2157 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2158 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2160 notes = "first time ssmbe of 3c-sic on 6h-sic",
2164 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2165 [alpha]-Si{C}(0001) at low temperatures by solid-source
2166 molecular beam epitaxy",
2167 journal = "J. Cryst. Growth",
2173 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2174 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2175 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2176 Schr{\"{o}}ter and W. Richter",
2177 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2180 @Article{fissel95_apl,
2181 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2183 title = "Low-temperature growth of Si{C} thin films on Si and
2184 6{H}--Si{C} by solid-source molecular beam epitaxy",
2187 journal = "Appl. Phys. Lett.",
2190 pages = "3182--3184",
2191 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2193 URL = "http://link.aip.org/link/?APL/66/3182/1",
2194 doi = "10.1063/1.113716",
2195 notes = "mbe 3c-sic on si and 6h-sic",
2199 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2200 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2202 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2203 migration enhanced epitaxy controlled to an atomic
2204 level using surface superstructures",
2207 journal = "Applied Physics Letters",
2210 pages = "1204--1206",
2211 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2212 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2214 URL = "http://link.aip.org/link/?APL/68/1204/1",
2215 doi = "10.1063/1.115969",
2216 notes = "ss mbe sic, superstructure, reconstruction",
2220 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2221 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2222 C. M. Bertoni and A. Catellani",
2223 journal = "Phys. Rev. Lett.",
2230 doi = "10.1103/PhysRevLett.91.136101",
2231 publisher = "American Physical Society",
2232 notes = "dft calculations mbe sic growth",
2236 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2238 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2242 journal = "Appl. Phys. Lett.",
2246 URL = "http://link.aip.org/link/?APL/18/509/1",
2247 doi = "10.1063/1.1653516",
2248 notes = "first time sic by ibs, follow cites for precipitation
2253 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2254 and E. V. Lubopytova",
2255 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2256 by ion implantation",
2257 publisher = "Taylor \& Francis",
2259 journal = "Radiation Effects",
2263 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2264 notes = "3c-sic for different temperatures, amorphous, poly,
2265 single crystalline",
2268 @Article{akimchenko80,
2269 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2270 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2271 title = "Structure and optical properties of silicon implanted
2272 by high doses of 70 and 310 ke{V} carbon ions",
2273 publisher = "Taylor \& Francis",
2275 journal = "Radiation Effects",
2279 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2280 notes = "3c-sic nucleation by thermal spikes",
2284 title = "Structure and annealing properties of silicon carbide
2285 thin layers formed by implantation of carbon ions in
2287 journal = "Thin Solid Films",
2294 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2295 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2296 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2301 title = "Characteristics of the synthesis of [beta]-Si{C} by
2302 the implantation of carbon ions into silicon",
2303 journal = "Thin Solid Films",
2310 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2311 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2312 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2317 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2318 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2319 Chater and J. A. Iulner and J. Davis",
2320 title = "Formation mechanisms and structures of insulating
2321 compounds formed in silicon by ion beam synthesis",
2322 publisher = "Taylor \& Francis",
2324 journal = "Radiation Effects",
2328 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2329 notes = "ibs, comparison with sio and sin, higher temp or
2334 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2335 J. Davis and G. E. Celler",
2337 title = "Formation of buried layers of beta-Si{C} using ion
2338 beam synthesis and incoherent lamp annealing",
2341 journal = "Appl. Phys. Lett.",
2344 pages = "2242--2244",
2345 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2346 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2347 URL = "http://link.aip.org/link/?APL/51/2242/1",
2348 doi = "10.1063/1.98953",
2349 notes = "nice tem images, sic by ibs",
2353 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2354 and M. Olivier and A. M. Papon and G. Rolland",
2356 title = "High-temperature ion beam synthesis of cubic Si{C}",
2359 journal = "Journal of Applied Physics",
2362 pages = "2908--2912",
2363 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2364 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2365 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2366 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2367 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2368 REACTIONS; MONOCRYSTALS",
2369 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2370 doi = "10.1063/1.346092",
2371 notes = "triple energy implantation to overcome high annealing
2376 author = "R. I. Scace and G. A. Slack",
2378 title = "Solubility of Carbon in Silicon and Germanium",
2381 journal = "J. Chem. Phys.",
2384 pages = "1551--1555",
2385 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2386 doi = "10.1063/1.1730236",
2387 notes = "solubility of c in c-si, si-c phase diagram",
2391 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2393 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2394 Laboratories Eindhoven Netherlands Eindhoven
2396 title = "Boron implantations in silicon: {A} comparison of
2397 charge carrier and boron concentration profiles",
2398 journal = "Applied Physics A: Materials Science \& Processing",
2399 publisher = "Springer Berlin / Heidelberg",
2401 keyword = "Physics and Astronomy",
2405 URL = "http://dx.doi.org/10.1007/BF00884267",
2406 note = "10.1007/BF00884267",
2408 notes = "first time ted (only for boron?)",
2412 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2415 title = "Rapid annealing and the anomalous diffusion of ion
2416 implanted boron into silicon",
2419 journal = "Applied Physics Letters",
2423 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2424 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2425 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2426 URL = "http://link.aip.org/link/?APL/50/416/1",
2427 doi = "10.1063/1.98160",
2428 notes = "ted of boron in si",
2432 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2435 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2436 time, and matrix dependence of atomic and electrical
2440 journal = "Journal of Applied Physics",
2443 pages = "6191--6198",
2444 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2445 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2446 CRYSTALS; AMORPHIZATION",
2447 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2448 doi = "10.1063/1.346910",
2449 notes = "ted of boron in si",
2453 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2454 F. W. Saris and W. Vandervorst",
2456 title = "Role of {C} and {B} clusters in transient diffusion of
2460 journal = "Appl. Phys. Lett.",
2463 pages = "1150--1152",
2464 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2465 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2467 URL = "http://link.aip.org/link/?APL/68/1150/1",
2468 doi = "10.1063/1.115706",
2469 notes = "suppression of transient enhanced diffusion (ted)",
2473 title = "Implantation and transient boron diffusion: the role
2474 of the silicon self-interstitial",
2475 journal = "Nucl. Instrum. Methods Phys. Res. B",
2480 note = "Selected Papers of the Tenth International Conference
2481 on Ion Implantation Technology (IIT '94)",
2483 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2484 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2485 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2490 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2491 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2492 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2495 title = "Physical mechanisms of transient enhanced dopant
2496 diffusion in ion-implanted silicon",
2499 journal = "J. Appl. Phys.",
2502 pages = "6031--6050",
2503 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2504 doi = "10.1063/1.364452",
2505 notes = "ted, transient enhanced diffusion, c silicon trap",
2509 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2511 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2512 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2515 journal = "Appl. Phys. Lett.",
2519 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2520 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2521 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2523 URL = "http://link.aip.org/link/?APL/64/324/1",
2524 doi = "10.1063/1.111195",
2525 notes = "beta sic nano crystals in si, mbe, annealing",
2529 author = "Richard A. Soref",
2531 title = "Optical band gap of the ternary semiconductor Si[sub 1
2532 - x - y]Ge[sub x]{C}[sub y]",
2535 journal = "J. Appl. Phys.",
2538 pages = "2470--2472",
2539 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2540 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2542 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2543 doi = "10.1063/1.349403",
2544 notes = "band gap of strained si by c",
2548 author = "E Kasper",
2549 title = "Superlattices of group {IV} elements, a new
2550 possibility to produce direct band gap material",
2551 journal = "Physica Scripta",
2554 URL = "http://stacks.iop.org/1402-4896/T35/232",
2556 notes = "superlattices, convert indirect band gap into a
2560 @Conference{powell93,
2561 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2564 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2568 journal = "J. Vac. Sci. Technol. B",
2571 pages = "1064--1068",
2572 location = "Ottawa (Canada)",
2573 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2574 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2575 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2576 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2577 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2578 doi = "10.1116/1.587008",
2579 notes = "substitutional c in si by mbe",
2583 author = "H. J. Osten and J. Griesche and S. Scalese",
2585 title = "Substitutional carbon incorporation in epitaxial
2586 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2587 molecular beam epitaxy",
2590 journal = "Appl. Phys. Lett.",
2594 keywords = "molecular beam epitaxial growth; semiconductor growth;
2595 wide band gap semiconductors; interstitials; silicon
2597 URL = "http://link.aip.org/link/?APL/74/836/1",
2598 doi = "10.1063/1.123384",
2599 notes = "substitutional c in si by mbe",
2602 @Article{hohenberg64,
2603 title = "Inhomogeneous Electron Gas",
2604 author = "P. Hohenberg and W. Kohn",
2605 journal = "Phys. Rev.",
2608 pages = "B864--B871",
2612 doi = "10.1103/PhysRev.136.B864",
2613 publisher = "American Physical Society",
2614 notes = "density functional theory, dft",
2618 title = "Self-Consistent Equations Including Exchange and
2619 Correlation Effects",
2620 author = "W. Kohn and L. J. Sham",
2621 journal = "Phys. Rev.",
2624 pages = "A1133--A1138",
2628 doi = "10.1103/PhysRev.140.A1133",
2629 publisher = "American Physical Society",
2630 notes = "dft, exchange and correlation",
2634 title = "Strain-stabilized highly concentrated pseudomorphic
2635 $Si1-x$$Cx$ layers in Si",
2636 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2638 journal = "Phys. Rev. Lett.",
2641 pages = "3578--3581",
2645 doi = "10.1103/PhysRevLett.72.3578",
2646 publisher = "American Physical Society",
2647 notes = "high c concentration in si, heterostructure, strained
2652 title = "Phosphorous Doping of Strain-Induced
2653 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2654 by Low-Temperature Chemical Vapor Deposition",
2655 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2656 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2657 journal = "Japanese Journal of Applied Physics",
2659 number = "Part 1, No. 4B",
2660 pages = "2472--2475",
2663 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2664 doi = "10.1143/JJAP.41.2472",
2665 publisher = "The Japan Society of Applied Physics",
2666 notes = "experimental charge carrier mobility in strained si",
2670 title = "Electron Transport Model for Strained Silicon-Carbon
2672 author = "Shu-Tong Chang and Chung-Yi Lin",
2673 journal = "Japanese J. Appl. Phys.",
2676 pages = "2257--2262",
2679 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2680 doi = "10.1143/JJAP.44.2257",
2681 publisher = "The Japan Society of Applied Physics",
2682 notes = "enhance of electron mobility in strained si",
2686 author = "H. J. Osten and P. Gaworzewski",
2688 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2689 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2693 journal = "J. Appl. Phys.",
2696 pages = "4977--4981",
2697 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2698 semiconductors; semiconductor epitaxial layers; carrier
2699 density; Hall mobility; interstitials; defect states",
2700 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2701 doi = "10.1063/1.366364",
2702 notes = "charge transport in strained si",
2706 title = "Carbon-mediated aggregation of self-interstitials in
2707 silicon: {A} large-scale molecular dynamics study",
2708 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2709 journal = "Phys. Rev. B",
2716 doi = "10.1103/PhysRevB.69.155214",
2717 publisher = "American Physical Society",
2718 notes = "simulation using promising tersoff reparametrization",
2722 title = "Event-Based Relaxation of Continuous Disordered
2724 author = "G. T. Barkema and Normand Mousseau",
2725 journal = "Phys. Rev. Lett.",
2728 pages = "4358--4361",
2732 doi = "10.1103/PhysRevLett.77.4358",
2733 publisher = "American Physical Society",
2734 notes = "activation relaxation technique, art, speed up slow
2739 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2740 Minoukadeh and F. Willaime",
2742 title = "Some improvements of the activation-relaxation
2743 technique method for finding transition pathways on
2744 potential energy surfaces",
2747 journal = "J. Chem. Phys.",
2753 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2754 surfaces; vacancies (crystal)",
2755 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2756 doi = "10.1063/1.3088532",
2757 notes = "improvements to art, refs for methods to find
2758 transition pathways",
2761 @Article{parrinello81,
2762 author = "M. Parrinello and A. Rahman",
2764 title = "Polymorphic transitions in single crystals: {A} new
2765 molecular dynamics method",
2768 journal = "J. Appl. Phys.",
2771 pages = "7182--7190",
2772 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2773 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2774 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2775 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2776 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2778 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2779 doi = "10.1063/1.328693",
2782 @Article{stillinger85,
2783 title = "Computer simulation of local order in condensed phases
2785 author = "Frank H. Stillinger and Thomas A. Weber",
2786 journal = "Phys. Rev. B",
2789 pages = "5262--5271",
2793 doi = "10.1103/PhysRevB.31.5262",
2794 publisher = "American Physical Society",
2798 title = "Empirical potential for hydrocarbons for use in
2799 simulating the chemical vapor deposition of diamond
2801 author = "Donald W. Brenner",
2802 journal = "Phys. Rev. B",
2805 pages = "9458--9471",
2809 doi = "10.1103/PhysRevB.42.9458",
2810 publisher = "American Physical Society",
2811 notes = "brenner hydro carbons",
2815 title = "Modeling of Covalent Bonding in Solids by Inversion of
2816 Cohesive Energy Curves",
2817 author = "Martin Z. Bazant and Efthimios Kaxiras",
2818 journal = "Phys. Rev. Lett.",
2821 pages = "4370--4373",
2825 doi = "10.1103/PhysRevLett.77.4370",
2826 publisher = "American Physical Society",
2827 notes = "first si edip",
2831 title = "Environment-dependent interatomic potential for bulk
2833 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2835 journal = "Phys. Rev. B",
2838 pages = "8542--8552",
2842 doi = "10.1103/PhysRevB.56.8542",
2843 publisher = "American Physical Society",
2844 notes = "second si edip",
2848 title = "Interatomic potential for silicon defects and
2850 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2851 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2852 journal = "Phys. Rev. B",
2855 pages = "2539--2550",
2859 doi = "10.1103/PhysRevB.58.2539",
2860 publisher = "American Physical Society",
2861 notes = "latest si edip, good dislocation explanation",
2865 title = "{PARCAS} molecular dynamics code",
2866 author = "K. Nordlund",
2871 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2873 author = "Arthur F. Voter",
2874 journal = "Phys. Rev. Lett.",
2877 pages = "3908--3911",
2881 doi = "10.1103/PhysRevLett.78.3908",
2882 publisher = "American Physical Society",
2883 notes = "hyperdynamics, accelerated md",
2887 author = "Arthur F. Voter",
2889 title = "A method for accelerating the molecular dynamics
2890 simulation of infrequent events",
2893 journal = "J. Chem. Phys.",
2896 pages = "4665--4677",
2897 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2898 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2899 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2900 energy functions; surface diffusion; reaction kinetics
2901 theory; potential energy surfaces",
2902 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2903 doi = "10.1063/1.473503",
2904 notes = "improved hyperdynamics md",
2907 @Article{sorensen2000,
2908 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2910 title = "Temperature-accelerated dynamics for simulation of
2914 journal = "J. Chem. Phys.",
2917 pages = "9599--9606",
2918 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2919 MOLECULAR DYNAMICS METHOD; surface diffusion",
2920 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2921 doi = "10.1063/1.481576",
2922 notes = "temperature accelerated dynamics, tad",
2926 title = "Parallel replica method for dynamics of infrequent
2928 author = "Arthur F. Voter",
2929 journal = "Phys. Rev. B",
2932 pages = "R13985--R13988",
2936 doi = "10.1103/PhysRevB.57.R13985",
2937 publisher = "American Physical Society",
2938 notes = "parallel replica method, accelerated md",
2942 author = "Xiongwu Wu and Shaomeng Wang",
2944 title = "Enhancing systematic motion in molecular dynamics
2948 journal = "J. Chem. Phys.",
2951 pages = "9401--9410",
2952 keywords = "molecular dynamics method; argon; Lennard-Jones
2953 potential; crystallisation; liquid theory",
2954 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2955 doi = "10.1063/1.478948",
2956 notes = "self guided md, sgmd, accelerated md, enhancing
2960 @Article{choudhary05,
2961 author = "Devashish Choudhary and Paulette Clancy",
2963 title = "Application of accelerated molecular dynamics schemes
2964 to the production of amorphous silicon",
2967 journal = "J. Chem. Phys.",
2973 keywords = "molecular dynamics method; silicon; glass structure;
2974 amorphous semiconductors",
2975 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2976 doi = "10.1063/1.1878733",
2977 notes = "explanation of sgmd and hyper md, applied to amorphous
2982 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2984 title = "Carbon precipitation in silicon: Why is it so
2988 journal = "Appl. Phys. Lett.",
2991 pages = "3336--3338",
2992 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2993 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2995 URL = "http://link.aip.org/link/?APL/62/3336/1",
2996 doi = "10.1063/1.109063",
2997 notes = "interfacial energy of cubic sic and si, si self
2998 interstitials necessary for precipitation, volume
2999 decrease, high interface energy",
3002 @Article{chaussende08,
3003 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3004 journal = "J. Cryst. Growth",
3009 note = "Proceedings of the E-MRS Conference, Symposium G -
3010 Substrates of Wide Bandgap Materials",
3012 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3013 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3014 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3015 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3016 and A. Andreadou and E. K. Polychroniadis and C.
3017 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3018 notes = "3c-sic crystal growth, sic fabrication + links,
3022 @Article{chaussende07,
3023 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3024 title = "Status of Si{C} bulk growth processes",
3025 journal = "Journal of Physics D: Applied Physics",
3029 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3031 notes = "review of sic single crystal growth methods, process
3036 title = "Forces in Molecules",
3037 author = "R. P. Feynman",
3038 journal = "Phys. Rev.",
3045 doi = "10.1103/PhysRev.56.340",
3046 publisher = "American Physical Society",
3047 notes = "hellmann feynman forces",
3051 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3052 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3053 their Contrasting Properties",
3054 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3056 journal = "Phys. Rev. Lett.",
3063 doi = "10.1103/PhysRevLett.84.943",
3064 publisher = "American Physical Society",
3065 notes = "si sio2 and sic sio2 interface",
3068 @Article{djurabekova08,
3069 title = "Atomistic simulation of the interface structure of Si
3070 nanocrystals embedded in amorphous silica",
3071 author = "Flyura Djurabekova and Kai Nordlund",
3072 journal = "Phys. Rev. B",
3079 doi = "10.1103/PhysRevB.77.115325",
3080 publisher = "American Physical Society",
3081 notes = "nc-si in sio2, interface energy, nc construction,
3082 angular distribution, coordination",
3086 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3087 W. Liang and J. Zou",
3089 title = "Nature of interfacial defects and their roles in
3090 strain relaxation at highly lattice mismatched
3091 3{C}-Si{C}/Si (001) interface",
3094 journal = "J. Appl. Phys.",
3100 keywords = "anelastic relaxation; crystal structure; dislocations;
3101 elemental semiconductors; semiconductor growth;
3102 semiconductor thin films; silicon; silicon compounds;
3103 stacking faults; wide band gap semiconductors",
3104 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3105 doi = "10.1063/1.3234380",
3106 notes = "sic/si interface, follow refs, tem image
3107 deconvolution, dislocation defects",
3110 @Article{kitabatake93,
3111 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3114 title = "Simulations and experiments of Si{C} heteroepitaxial
3115 growth on Si(001) surface",
3118 journal = "J. Appl. Phys.",
3121 pages = "4438--4445",
3122 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3123 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3124 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3125 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3126 doi = "10.1063/1.354385",
3127 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3131 @Article{kitabatake97,
3132 author = "Makoto Kitabatake",
3133 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3134 Heteroepitaxial Growth",
3135 publisher = "WILEY-VCH Verlag",
3137 journal = "physica status solidi (b)",
3140 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3141 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3142 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3146 title = "Strain relaxation and thermal stability of the
3147 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3149 journal = "Thin Solid Films",
3156 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3157 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3158 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3159 keywords = "Strain relaxation",
3160 keywords = "Interfaces",
3161 keywords = "Thermal stability",
3162 keywords = "Molecular dynamics",
3163 notes = "tersoff sic/si interface study",
3167 title = "Ab initio Study of Misfit Dislocations at the
3168 $Si{C}/Si(001)$ Interface",
3169 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3171 journal = "Phys. Rev. Lett.",
3178 doi = "10.1103/PhysRevLett.89.156101",
3179 publisher = "American Physical Society",
3180 notes = "sic/si interface study",
3183 @Article{pizzagalli03,
3184 title = "Theoretical investigations of a highly mismatched
3185 interface: Si{C}/Si(001)",
3186 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3188 journal = "Phys. Rev. B",
3195 doi = "10.1103/PhysRevB.68.195302",
3196 publisher = "American Physical Society",
3197 notes = "tersoff md and ab initio sic/si interface study",
3201 title = "Atomic configurations of dislocation core and twin
3202 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3203 electron microscopy",
3204 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3205 H. Zheng and J. W. Liang",
3206 journal = "Phys. Rev. B",
3213 doi = "10.1103/PhysRevB.75.184103",
3214 publisher = "American Physical Society",
3215 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3219 @Article{hornstra58,
3220 title = "Dislocations in the diamond lattice",
3221 journal = "Journal of Physics and Chemistry of Solids",
3228 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3229 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3230 author = "J. Hornstra",
3231 notes = "dislocations in diamond lattice",
3235 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3236 Ion `Hot' Implantation",
3237 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3238 Hirao and Naoki Arai and Tomio Izumi",
3239 journal = "Japanese J. Appl. Phys.",
3241 number = "Part 1, No. 2A",
3245 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3246 doi = "10.1143/JJAP.31.343",
3247 publisher = "The Japan Society of Applied Physics",
3248 notes = "c-c bonds in c implanted si, hot implantation
3249 efficiency, c-c hard to break by thermal annealing",
3252 @Article{eichhorn99,
3253 author = "F. Eichhorn and N. Schell and W. Matz and R.
3256 title = "Strain and Si{C} particle formation in silicon
3257 implanted with carbon ions of medium fluence studied by
3258 synchrotron x-ray diffraction",
3261 journal = "J. Appl. Phys.",
3264 pages = "4184--4187",
3265 keywords = "silicon; carbon; elemental semiconductors; chemical
3266 interdiffusion; ion implantation; X-ray diffraction;
3267 precipitation; semiconductor doping",
3268 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3269 doi = "10.1063/1.371344",
3270 notes = "sic conversion by ibs, detected substitutional carbon,
3271 expansion of si lattice",
3274 @Article{eichhorn02,
3275 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3276 Metzger and W. Matz and R. K{\"{o}}gler",
3278 title = "Structural relation between Si and Si{C} formed by
3279 carbon ion implantation",
3282 journal = "J. Appl. Phys.",
3285 pages = "1287--1292",
3286 keywords = "silicon compounds; wide band gap semiconductors; ion
3287 implantation; annealing; X-ray scattering; transmission
3288 electron microscopy",
3289 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3290 doi = "10.1063/1.1428105",
3291 notes = "3c-sic alignement to si host in ibs depending on
3292 temperature, might explain c into c sub trafo",
3296 author = "G Lucas and M Bertolus and L Pizzagalli",
3297 title = "An environment-dependent interatomic potential for
3298 silicon carbide: calculation of bulk properties,
3299 high-pressure phases, point and extended defects, and
3300 amorphous structures",
3301 journal = "J. Phys.: Condens. Matter",
3305 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3311 author = "J Godet and L Pizzagalli and S Brochard and P
3313 title = "Comparison between classical potentials and ab initio
3314 methods for silicon under large shear",
3315 journal = "J. Phys.: Condens. Matter",
3319 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3321 notes = "comparison of empirical potentials, stillinger weber,
3322 edip, tersoff, ab initio",
3325 @Article{moriguchi98,
3326 title = "Verification of Tersoff's Potential for Static
3327 Structural Analysis of Solids of Group-{IV} Elements",
3328 author = "Koji Moriguchi and Akira Shintani",
3329 journal = "Japanese J. Appl. Phys.",
3331 number = "Part 1, No. 2",
3335 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3336 doi = "10.1143/JJAP.37.414",
3337 publisher = "The Japan Society of Applied Physics",
3338 notes = "tersoff stringent test",
3341 @Article{mazzarolo01,
3342 title = "Low-energy recoils in crystalline silicon: Quantum
3344 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3345 Lulli and Eros Albertazzi",
3346 journal = "Phys. Rev. B",
3353 doi = "10.1103/PhysRevB.63.195207",
3354 publisher = "American Physical Society",
3357 @Article{holmstroem08,
3358 title = "Threshold defect production in silicon determined by
3359 density functional theory molecular dynamics
3361 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3362 journal = "Phys. Rev. B",
3369 doi = "10.1103/PhysRevB.78.045202",
3370 publisher = "American Physical Society",
3371 notes = "threshold displacement comparison empirical and ab
3375 @Article{nordlund97,
3376 title = "Repulsive interatomic potentials calculated using
3377 Hartree-Fock and density-functional theory methods",
3378 journal = "Nucl. Instrum. Methods Phys. Res. B",
3385 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3386 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3387 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3388 notes = "repulsive ab initio potential",
3392 title = "Efficiency of ab-initio total energy calculations for
3393 metals and semiconductors using a plane-wave basis
3395 journal = "Comput. Mater. Sci.",
3402 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3403 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3404 author = "G. Kresse and J. Furthm{\"{u}}ller",
3409 title = "Projector augmented-wave method",
3410 author = "P. E. Bl{\"o}chl",
3411 journal = "Phys. Rev. B",
3414 pages = "17953--17979",
3418 doi = "10.1103/PhysRevB.50.17953",
3419 publisher = "American Physical Society",
3420 notes = "paw method",
3424 title = "Norm-Conserving Pseudopotentials",
3425 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3426 journal = "Phys. Rev. Lett.",
3429 pages = "1494--1497",
3433 doi = "10.1103/PhysRevLett.43.1494",
3434 publisher = "American Physical Society",
3435 notes = "norm-conserving pseudopotentials",
3438 @Article{vanderbilt90,
3439 title = "Soft self-consistent pseudopotentials in a generalized
3440 eigenvalue formalism",
3441 author = "David Vanderbilt",
3442 journal = "Phys. Rev. B",
3445 pages = "7892--7895",
3449 doi = "10.1103/PhysRevB.41.7892",
3450 publisher = "American Physical Society",
3451 notes = "vasp pseudopotentials",
3455 title = "Accurate and simple density functional for the
3456 electronic exchange energy: Generalized gradient
3458 author = "John P. Perdew and Yue Wang",
3459 journal = "Phys. Rev. B",
3462 pages = "8800--8802",
3466 doi = "10.1103/PhysRevB.33.8800",
3467 publisher = "American Physical Society",
3468 notes = "rapid communication gga",
3472 title = "Generalized gradient approximations for exchange and
3473 correlation: {A} look backward and forward",
3474 journal = "Physica B: Condensed Matter",
3481 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3482 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3483 author = "John P. Perdew",
3484 notes = "gga overview",
3488 title = "Atoms, molecules, solids, and surfaces: Applications
3489 of the generalized gradient approximation for exchange
3491 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3492 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3493 and Carlos Fiolhais",
3494 journal = "Phys. Rev. B",
3497 pages = "6671--6687",
3501 doi = "10.1103/PhysRevB.46.6671",
3502 publisher = "American Physical Society",
3503 notes = "gga pw91 (as in vasp)",
3506 @Article{baldereschi73,
3507 title = "Mean-Value Point in the Brillouin Zone",
3508 author = "A. Baldereschi",
3509 journal = "Phys. Rev. B",
3512 pages = "5212--5215",
3516 doi = "10.1103/PhysRevB.7.5212",
3517 publisher = "American Physical Society",
3518 notes = "mean value k point",
3522 title = "Ab initio pseudopotential calculations of dopant
3524 journal = "Comput. Mater. Sci.",
3531 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3532 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3533 author = "Jing Zhu",
3534 keywords = "TED (transient enhanced diffusion)",
3535 keywords = "Boron dopant",
3536 keywords = "Carbon dopant",
3537 keywords = "Defect",
3538 keywords = "ab initio pseudopotential method",
3539 keywords = "Impurity cluster",
3540 notes = "binding of c to si interstitial, c in si defects",
3544 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3546 title = "Si{C} buried layer formation by ion beam synthesis at
3550 journal = "Appl. Phys. Lett.",
3553 pages = "2646--2648",
3554 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3555 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3556 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3557 ELECTRON MICROSCOPY",
3558 URL = "http://link.aip.org/link/?APL/66/2646/1",
3559 doi = "10.1063/1.113112",
3560 notes = "precipitation mechanism by substitutional carbon, si
3561 self interstitials react with further implanted c",
3565 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3566 Kolodzey and A. Hairie",
3568 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3572 journal = "J. Appl. Phys.",
3575 pages = "4631--4633",
3576 keywords = "silicon compounds; precipitation; localised modes;
3577 semiconductor epitaxial layers; infrared spectra;
3578 Fourier transform spectra; thermal stability;
3580 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3581 doi = "10.1063/1.368703",
3582 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3586 author = "R Jones and B J Coomer and P R Briddon",
3587 title = "Quantum mechanical modelling of defects in
3589 journal = "J. Phys.: Condens. Matter",
3593 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3595 notes = "ab inito dft intro, vibrational modes, c defect in
3600 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3601 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3602 J. E. Greene and S. G. Bishop",
3604 title = "Carbon incorporation pathways and lattice sites in
3605 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3606 molecular-beam epitaxy",
3609 journal = "J. Appl. Phys.",
3612 pages = "5716--5727",
3613 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3614 doi = "10.1063/1.1465122",
3615 notes = "c substitutional incorporation pathway, dft and expt",
3619 title = "Dynamic properties of interstitial carbon and
3620 carbon-carbon pair defects in silicon",
3621 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3623 journal = "Phys. Rev. B",
3626 pages = "2188--2194",
3630 doi = "10.1103/PhysRevB.55.2188",
3631 publisher = "American Physical Society",
3632 notes = "ab initio c in si and di-carbon defect, no formation
3633 energies, different migration barriers and paths",
3637 title = "Interstitial carbon and the carbon-carbon pair in
3638 silicon: Semiempirical electronic-structure
3640 author = "Matthew J. Burnard and Gary G. DeLeo",
3641 journal = "Phys. Rev. B",
3644 pages = "10217--10225",
3648 doi = "10.1103/PhysRevB.47.10217",
3649 publisher = "American Physical Society",
3650 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3651 carbon defect, formation energies",
3655 title = "Electronic structure of interstitial carbon in
3657 author = "Morgan Besson and Gary G. DeLeo",
3658 journal = "Phys. Rev. B",
3661 pages = "4028--4033",
3665 doi = "10.1103/PhysRevB.43.4028",
3666 publisher = "American Physical Society",
3670 title = "Review of atomistic simulations of surface diffusion
3671 and growth on semiconductors",
3672 journal = "Comput. Mater. Sci.",
3677 note = "Proceedings of the Workshop on Virtual Molecular Beam
3680 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3681 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3682 author = "Efthimios Kaxiras",
3683 notes = "might contain c 100 db formation energy, overview md,
3684 tight binding, first principles",
3687 @Article{kaukonen98,
3688 title = "Effect of {N} and {B} doping on the growth of {CVD}
3690 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3692 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3693 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3695 journal = "Phys. Rev. B",
3698 pages = "9965--9970",
3702 doi = "10.1103/PhysRevB.57.9965",
3703 publisher = "American Physical Society",
3704 notes = "constrained conjugate gradient relaxation technique
3709 title = "Correlation between the antisite pair and the ${DI}$
3711 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3712 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3714 journal = "Phys. Rev. B",
3721 doi = "10.1103/PhysRevB.67.155203",
3722 publisher = "American Physical Society",
3726 title = "Production and recovery of defects in Si{C} after
3727 irradiation and deformation",
3728 journal = "J. Nucl. Mater.",
3731 pages = "1803--1808",
3735 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3736 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3737 author = "J. Chen and P. Jung and H. Klein",
3741 title = "Accumulation, dynamic annealing and thermal recovery
3742 of ion-beam-induced disorder in silicon carbide",
3743 journal = "Nucl. Instrum. Methods Phys. Res. B",
3750 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3751 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3752 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3755 @Article{bockstedte03,
3756 title = "Ab initio study of the migration of intrinsic defects
3758 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3760 journal = "Phys. Rev. B",
3767 doi = "10.1103/PhysRevB.68.205201",
3768 publisher = "American Physical Society",
3769 notes = "defect migration in sic",
3773 title = "Theoretical study of vacancy diffusion and
3774 vacancy-assisted clustering of antisites in Si{C}",
3775 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3777 journal = "Phys. Rev. B",
3784 doi = "10.1103/PhysRevB.68.155208",
3785 publisher = "American Physical Society",
3789 journal = "Telegrafiya i Telefoniya bez Provodov",
3793 author = "O. V. Lossev",
3797 title = "Luminous carborundum detector and detection effect and
3798 oscillations with crystals",
3799 journal = "Philosophical Magazine Series 7",
3802 pages = "1024--1044",
3804 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3805 author = "O. V. Lossev",
3809 journal = "Physik. Zeitschr.",
3813 author = "O. V. Lossev",
3817 journal = "Physik. Zeitschr.",
3821 author = "O. V. Lossev",
3825 journal = "Physik. Zeitschr.",
3829 author = "O. V. Lossev",
3833 title = "A note on carborundum",
3834 journal = "Electrical World",
3838 author = "H. J. Round",
3841 @Article{vashishath08,
3842 title = "Recent trends in silicon carbide device research",
3843 journal = "Mj. Int. J. Sci. Tech.",
3848 author = "Munish Vashishath and Ashoke K. Chatterjee",
3849 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3850 notes = "sic polytype electronic properties",
3854 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3856 title = "Growth and Properties of beta-Si{C} Single Crystals",
3859 journal = "Journal of Applied Physics",
3863 URL = "http://link.aip.org/link/?JAP/37/333/1",
3864 doi = "10.1063/1.1707837",
3865 notes = "sic melt growth",
3869 author = "A. E. van Arkel and J. H. de Boer",
3870 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3872 publisher = "WILEY-VCH Verlag GmbH",
3874 journal = "Z. Anorg. Chem.",
3877 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3878 doi = "10.1002/zaac.19251480133",
3879 notes = "van arkel apparatus",
3883 author = "K. Moers",
3885 journal = "Z. Anorg. Chem.",
3888 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3893 author = "J. T. Kendall",
3894 title = "Electronic Conduction in Silicon Carbide",
3897 journal = "The Journal of Chemical Physics",
3901 URL = "http://link.aip.org/link/?JCP/21/821/1",
3902 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3907 author = "J. A. Lely",
3909 journal = "Ber. Deut. Keram. Ges.",
3912 notes = "lely sublimation growth process",
3915 @Article{knippenberg63,
3916 author = "W. F. Knippenberg",
3918 journal = "Philips Res. Repts.",
3921 notes = "acheson process",
3924 @Article{hoffmann82,
3925 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3928 title = "Silicon carbide blue light emitting diodes with
3929 improved external quantum efficiency",
3932 journal = "Journal of Applied Physics",
3935 pages = "6962--6967",
3936 keywords = "light emitting diodes; silicon carbides; quantum
3937 efficiency; visible radiation; experimental data;
3938 epitaxy; fabrication; medium temperature; layers;
3939 aluminium; nitrogen; substrates; pn junctions;
3940 electroluminescence; spectra; current density;
3942 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3943 doi = "10.1063/1.330041",
3944 notes = "blue led, sublimation process",
3948 author = "Philip Neudeck",
3949 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3950 Road 44135 Cleveland OH",
3951 title = "Progress in silicon carbide semiconductor electronics
3953 journal = "Journal of Electronic Materials",
3954 publisher = "Springer Boston",
3956 keyword = "Chemistry and Materials Science",
3960 URL = "http://dx.doi.org/10.1007/BF02659688",
3961 note = "10.1007/BF02659688",
3963 notes = "sic data, advantages of 3c sic",
3966 @Article{bhatnagar93,
3967 author = "M. Bhatnagar and B. J. Baliga",
3968 journal = "Electron Devices, IEEE Transactions on",
3969 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3976 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3977 rectifiers;Si;SiC;breakdown voltages;drift region
3978 properties;output characteristics;power MOSFETs;power
3979 semiconductor devices;switching characteristics;thermal
3980 analysis;Schottky-barrier diodes;electric breakdown of
3981 solids;insulated gate field effect transistors;power
3982 transistors;semiconductor materials;silicon;silicon
3983 compounds;solid-state rectifiers;thermal analysis;",
3984 doi = "10.1109/16.199372",
3986 notes = "comparison 3c 6h sic and si devices",
3990 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3991 A. Powell and C. S. Salupo and L. G. Matus",
3992 journal = "Electron Devices, IEEE Transactions on",
3993 title = "Electrical properties of epitaxial 3{C}- and
3994 6{H}-Si{C} p-n junction diodes produced side-by-side on
3995 6{H}-Si{C} substrates",
4001 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4002 C;6H-SiC layers;6H-SiC substrates;CVD
4003 process;SiC;chemical vapor deposition;doping;electrical
4004 properties;epitaxial layers;light
4005 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4006 diodes;polytype;rectification characteristics;reverse
4007 leakage current;reverse voltages;temperature;leakage
4008 currents;power electronics;semiconductor
4009 diodes;semiconductor epitaxial layers;semiconductor
4010 growth;semiconductor materials;silicon
4011 compounds;solid-state rectifiers;substrates;vapour
4012 phase epitaxial growth;",
4013 doi = "10.1109/16.285038",
4015 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4020 author = "N. Schulze and D. L. Barrett and G. Pensl",
4022 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4023 single crystals by physical vapor transport",
4026 journal = "Applied Physics Letters",
4029 pages = "1632--1634",
4030 keywords = "silicon compounds; semiconductor materials;
4031 semiconductor growth; crystal growth from vapour;
4032 photoluminescence; Hall mobility",
4033 URL = "http://link.aip.org/link/?APL/72/1632/1",
4034 doi = "10.1063/1.121136",
4035 notes = "micropipe free 6h-sic pvt growth",
4039 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4041 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4044 journal = "Applied Physics Letters",
4048 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4049 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4050 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4051 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4053 URL = "http://link.aip.org/link/?APL/50/221/1",
4054 doi = "10.1063/1.97667",
4055 notes = "apb 3c-sic heteroepitaxy on si",
4058 @Article{shibahara86,
4059 title = "Surface morphology of cubic Si{C}(100) grown on
4060 Si(100) by chemical vapor deposition",
4061 journal = "Journal of Crystal Growth",
4068 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4069 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4070 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4072 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4075 @Article{desjardins96,
4076 author = "P. Desjardins and J. E. Greene",
4078 title = "Step-flow epitaxial growth on two-domain surfaces",
4081 journal = "Journal of Applied Physics",
4084 pages = "1423--1434",
4085 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4086 FILM GROWTH; SURFACE STRUCTURE",
4087 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4088 doi = "10.1063/1.360980",
4089 notes = "apb model",
4093 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4095 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4096 carbonization of silicon",
4099 journal = "Journal of Applied Physics",
4102 pages = "2070--2073",
4103 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4104 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4106 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4107 doi = "10.1063/1.360184",
4108 notes = "ssmbe of sic on si, lower temperatures",
4112 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4113 {MBE} using surface superstructure",
4114 journal = "Journal of Crystal Growth",
4121 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4122 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4123 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4124 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4125 notes = "gas source mbe of 3c-sic on 6h-sic",
4128 @Article{yoshinobu92,
4129 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4130 and Takashi Fuyuki and Hiroyuki Matsunami",
4132 title = "Lattice-matched epitaxial growth of single crystalline
4133 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4134 molecular beam epitaxy",
4137 journal = "Applied Physics Letters",
4141 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4142 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4143 INTERFACE STRUCTURE",
4144 URL = "http://link.aip.org/link/?APL/60/824/1",
4145 doi = "10.1063/1.107430",
4146 notes = "gas source mbe of 3c-sic on 6h-sic",
4149 @Article{yoshinobu90,
4150 title = "Atomic level control in gas source {MBE} growth of
4152 journal = "Journal of Crystal Growth",
4159 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4160 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4161 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4162 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4163 notes = "gas source mbe of 3c-sic on 3c-sic",
4167 title = "Atomic layer epitaxy controlled by surface
4168 superstructures in Si{C}",
4169 journal = "Thin Solid Films",
4176 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4177 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4178 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4180 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4185 title = "Microscopic mechanisms of accurate layer-by-layer
4186 growth of [beta]-Si{C}",
4187 journal = "Thin Solid Films",
4194 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4195 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4196 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4197 and S. Misawa and E. Sakuma and S. Yoshida",
4198 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4203 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4205 title = "Effects of gas flow ratio on silicon carbide thin film
4206 growth mode and polytype formation during gas-source
4207 molecular beam epitaxy",
4210 journal = "Applied Physics Letters",
4213 pages = "2851--2853",
4214 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4215 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4216 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4218 URL = "http://link.aip.org/link/?APL/65/2851/1",
4219 doi = "10.1063/1.112513",
4220 notes = "gas source mbe of 6h-sic on 6h-sic",
4224 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4225 title = "Heterointerface Control and Epitaxial Growth of
4226 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4227 publisher = "WILEY-VCH Verlag",
4229 journal = "physica status solidi (b)",
4232 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4237 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4238 journal = "Journal of Crystal Growth",
4245 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4246 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4247 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4248 keywords = "Reflection high-energy electron diffraction (RHEED)",
4249 keywords = "Scanning electron microscopy (SEM)",
4250 keywords = "Silicon carbide",
4251 keywords = "Silicon",
4252 keywords = "Island growth",
4253 notes = "lower temperature, 550-700",
4256 @Article{hatayama95,
4257 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4258 on Si using hydrocarbon radicals by gas source
4259 molecular beam epitaxy",
4260 journal = "Journal of Crystal Growth",
4267 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4268 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4269 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4270 and Hiroyuki Matsunami",
4274 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4275 title = "The Preference of Silicon Carbide for Growth in the
4276 Metastable Cubic Form",
4277 journal = "Journal of the American Ceramic Society",
4280 publisher = "Blackwell Publishing Ltd",
4282 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4283 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4284 pages = "2630--2633",
4285 keywords = "silicon carbide, crystal growth, crystal structure,
4286 calculations, stability",
4288 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4289 polytype dft calculation refs",
4292 @Article{allendorf91,
4293 title = "The adsorption of {H}-atoms on polycrystalline
4294 [beta]-silicon carbide",
4295 journal = "Surface Science",
4302 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4303 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4304 author = "Mark D. Allendorf and Duane A. Outka",
4305 notes = "h adsorption on 3c-sic",
4308 @Article{eaglesham93,
4309 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4310 D. P. Adams and S. M. Yalisove",
4312 title = "Effect of {H} on Si molecular-beam epitaxy",
4315 journal = "Journal of Applied Physics",
4318 pages = "6615--6618",
4319 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4320 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4321 DIFFUSION; ADSORPTION",
4322 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4323 doi = "10.1063/1.355101",
4324 notes = "h incorporation on si surface, lower surface
4329 author = "Ronald C. Newman",
4330 title = "Carbon in Crystalline Silicon",
4331 journal = "MRS Online Proceedings Library",
4336 doi = "10.1557/PROC-59-403",
4337 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4338 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4342 title = "The diffusivity of carbon in silicon",
4343 journal = "Journal of Physics and Chemistry of Solids",
4350 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4351 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4352 author = "R. C. Newman and J. Wakefield",
4353 notes = "diffusivity of substitutional c in si",
4357 author = "U. Gösele",
4358 title = "The Role of Carbon and Point Defects in Silicon",
4359 journal = "MRS Online Proceedings Library",
4364 doi = "10.1557/PROC-59-419",
4365 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4366 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4370 title = "Convergence of supercell calculations for point
4371 defects in semiconductors: Vacancy in silicon",
4372 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4374 journal = "Phys. Rev. B",
4377 pages = "1318--1325",
4381 doi = "10.1103/PhysRevB.58.1318",
4382 publisher = "American Physical Society",
4383 notes = "convergence k point supercell size, vacancy in
4388 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4389 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4390 K{\"{o}}gler and W. Skorupa",
4392 title = "Spectroscopic characterization of phases formed by
4393 high-dose carbon ion implantation in silicon",
4396 journal = "Journal of Applied Physics",
4399 pages = "2978--2984",
4400 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4401 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4402 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4403 DEPENDENCE; PRECIPITATES; ANNEALING",
4404 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4405 doi = "10.1063/1.358714",