2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "Vibrational absorption of carbon in silicon",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/0022-3697(65)90166-6",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
54 author = "R. C. Newman and J. B. Willis",
55 notes = "c impurity dissolved as substitutional c in si",
59 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
62 title = "Effect of Carbon on the Lattice Parameter of Silicon",
65 journal = "Journal of Applied Physics",
69 URL = "http://link.aip.org/link/?JAP/39/4365/1",
70 doi = "10.1063/1.1656977",
71 notes = "lattice contraction due to subst c",
75 title = "The solubility of carbon in pulled silicon crystals",
76 journal = "Journal of Physics and Chemistry of Solids",
83 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
84 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
85 author = "A. R. Bean and R. C. Newman",
86 notes = "experimental solubility data of carbon in silicon",
90 author = "M. A. Capano and R. J. Trew",
91 title = "Silicon Carbide Electronic Materials and Devices",
92 journal = "MRS Bull.",
99 author = "G. R. Fisher and P. Barnes",
100 title = "Towards a unified view of polytypism in silicon
102 journal = "Philos. Mag. B",
106 notes = "sic polytypes",
110 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
111 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
112 Serre and A. Perez-Rodriguez",
113 title = "Synthesis of nano-sized Si{C} precipitates in Si by
114 simultaneous dual-beam implantation of {C}+ and Si+
116 journal = "Appl. Phys. A: Mater. Sci. Process.",
121 notes = "dual implantation, sic prec enhanced by vacancies,
122 precipitation by interstitial and substitutional
123 carbon, both mechanisms explained + refs",
127 title = "Carbon-mediated effects in silicon and in
128 silicon-related materials",
129 journal = "Materials Chemistry and Physics",
136 doi = "DOI: 10.1016/0254-0584(95)01673-I",
137 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
138 author = "W. Skorupa and R. A. Yankov",
139 notes = "review of silicon carbon compound",
143 author = "P. S. de Laplace",
144 title = "Th\'eorie analytique des probabilit\'es",
145 series = "Oeuvres Compl\`etes de Laplace",
147 publisher = "Gauthier-Villars",
151 @Article{mattoni2007,
152 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
153 title = "{Atomistic modeling of brittleness in covalent
155 journal = "Phys. Rev. B",
161 doi = "10.1103/PhysRevB.76.224103",
162 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
163 longe(r)-range-interactions, brittle propagation of
164 fracture, more available potentials, universal energy
165 relation (uer), minimum range model (mrm)",
169 title = "Comparative study of silicon empirical interatomic
171 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
172 journal = "Phys. Rev. B",
175 pages = "2250--2279",
179 doi = "10.1103/PhysRevB.46.2250",
180 publisher = "American Physical Society",
181 notes = "comparison of classical potentials for si",
185 title = "Stress relaxation in $a-Si$ induced by ion
187 author = "H. M. Urbassek M. Koster",
188 journal = "Phys. Rev. B",
191 pages = "11219--11224",
195 doi = "10.1103/PhysRevB.62.11219",
196 publisher = "American Physical Society",
197 notes = "virial derivation for 3-body tersoff potential",
200 @Article{breadmore99,
201 title = "Direct simulation of ion-beam-induced stressing and
202 amorphization of silicon",
203 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
204 journal = "Phys. Rev. B",
207 pages = "12610--12616",
211 doi = "10.1103/PhysRevB.60.12610",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
217 title = "First-Principles Calculation of Stress",
218 author = "O. H. Nielsen and Richard M. Martin",
219 journal = "Phys. Rev. Lett.",
226 doi = "10.1103/PhysRevLett.50.697",
227 publisher = "American Physical Society",
228 notes = "generalization of virial theorem",
232 title = "Quantum-mechanical theory of stress and force",
233 author = "O. H. Nielsen and Richard M. Martin",
234 journal = "Phys. Rev. B",
237 pages = "3780--3791",
241 doi = "10.1103/PhysRevB.32.3780",
242 publisher = "American Physical Society",
243 notes = "dft virial stress and forces",
247 author = "Henri Moissan",
248 title = "Nouvelles recherches sur la météorité de Cañon
250 journal = "Comptes rendus de l'Académie des Sciences",
257 author = "Y. S. Park",
258 title = "Si{C} Materials and Devices",
259 publisher = "Academic Press",
260 address = "San Diego",
265 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
266 Calvin H. Carter Jr. and D. Asbury",
267 title = "Si{C} Seeded Boule Growth",
268 journal = "Materials Science Forum",
272 notes = "modified lely process, micropipes",
276 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
277 Thermodynamical Properties of Lennard-Jones Molecules",
278 author = "Loup Verlet",
279 journal = "Phys. Rev.",
285 doi = "10.1103/PhysRev.159.98",
286 publisher = "American Physical Society",
287 notes = "velocity verlet integration algorithm equation of
291 @Article{berendsen84,
292 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
293 Gunsteren and A. DiNola and J. R. Haak",
295 title = "Molecular dynamics with coupling to an external bath",
298 journal = "J. Chem. Phys.",
301 pages = "3684--3690",
302 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
303 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
304 URL = "http://link.aip.org/link/?JCP/81/3684/1",
305 doi = "10.1063/1.448118",
306 notes = "berendsen thermostat barostat",
310 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
312 title = "Molecular dynamics determination of defect energetics
313 in beta -Si{C} using three representative empirical
315 journal = "Modell. Simul. Mater. Sci. Eng.",
319 URL = "http://stacks.iop.org/0965-0393/3/615",
320 notes = "comparison of tersoff, pearson and eam for defect
321 energetics in sic; (m)eam parameters for sic",
326 title = "Relationship between the embedded-atom method and
328 author = "Donald W. Brenner",
329 journal = "Phys. Rev. Lett.",
336 doi = "10.1103/PhysRevLett.63.1022",
337 publisher = "American Physical Society",
338 notes = "relation of tersoff and eam potential",
342 title = "Molecular-dynamics study of self-interstitials in
344 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
345 journal = "Phys. Rev. B",
348 pages = "9552--9558",
352 doi = "10.1103/PhysRevB.35.9552",
353 publisher = "American Physical Society",
354 notes = "selft-interstitials in silicon, stillinger-weber,
355 calculation of defect formation energy, defect
360 title = "Extended interstitials in silicon and germanium",
361 author = "H. R. Schober",
362 journal = "Phys. Rev. B",
365 pages = "13013--13015",
369 doi = "10.1103/PhysRevB.39.13013",
370 publisher = "American Physical Society",
371 notes = "stillinger-weber silicon 110 stable and metastable
372 dumbbell configuration",
376 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
377 Defect accumulation, topological features, and
379 author = "F. Gao and W. J. Weber",
380 journal = "Phys. Rev. B",
387 doi = "10.1103/PhysRevB.66.024106",
388 publisher = "American Physical Society",
389 notes = "sic intro, si cascade in 3c-sic, amorphization,
390 tersoff modified, pair correlation of amorphous sic, md
394 @Article{devanathan98,
395 title = "Computer simulation of a 10 ke{V} Si displacement
397 journal = "Nucl. Instrum. Methods Phys. Res. B",
403 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
404 author = "R. Devanathan and W. J. Weber and T. Diaz de la
406 notes = "modified tersoff short range potential, ab initio
410 @Article{devanathan98_2,
411 title = "Displacement threshold energies in [beta]-Si{C}",
412 journal = "J. Nucl. Mater.",
418 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
419 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
421 notes = "modified tersoff, ab initio, combined ab initio
425 @Article{kitabatake00,
426 title = "Si{C}/Si heteroepitaxial growth",
427 author = "M. Kitabatake",
428 journal = "Thin Solid Films",
433 notes = "md simulation, sic si heteroepitaxy, mbe",
437 title = "Intrinsic point defects in crystalline silicon:
438 Tight-binding molecular dynamics studies of
439 self-diffusion, interstitial-vacancy recombination, and
441 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
443 journal = "Phys. Rev. B",
446 pages = "14279--14289",
450 doi = "10.1103/PhysRevB.55.14279",
451 publisher = "American Physical Society",
452 notes = "si self interstitial, diffusion, tbmd",
456 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
459 title = "A kinetic Monte--Carlo study of the effective
460 diffusivity of the silicon self-interstitial in the
461 presence of carbon and boron",
464 journal = "J. Appl. Phys.",
467 pages = "1963--1967",
468 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
469 CARBON ADDITIONS; BORON ADDITIONS; elemental
470 semiconductors; self-diffusion",
471 URL = "http://link.aip.org/link/?JAP/84/1963/1",
472 doi = "10.1063/1.368328",
473 notes = "kinetic monte carlo of si self interstitial
478 title = "Barrier to Migration of the Silicon
480 author = "Y. Bar-Yam and J. D. Joannopoulos",
481 journal = "Phys. Rev. Lett.",
484 pages = "1129--1132",
488 doi = "10.1103/PhysRevLett.52.1129",
489 publisher = "American Physical Society",
490 notes = "si self-interstitial migration barrier",
493 @Article{bar-yam84_2,
494 title = "Electronic structure and total-energy migration
495 barriers of silicon self-interstitials",
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. B",
500 pages = "1844--1852",
504 doi = "10.1103/PhysRevB.30.1844",
505 publisher = "American Physical Society",
509 title = "First-principles calculations of self-diffusion
510 constants in silicon",
511 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
512 and D. B. Laks and W. Andreoni and S. T. Pantelides",
513 journal = "Phys. Rev. Lett.",
516 pages = "2435--2438",
520 doi = "10.1103/PhysRevLett.70.2435",
521 publisher = "American Physical Society",
522 notes = "si self int diffusion by ab initio md, formation
523 entropy calculations",
527 title = "Tight-binding theory of native point defects in
529 author = "L. Colombo",
530 journal = "Annu. Rev. Mater. Res.",
535 doi = "10.1146/annurev.matsci.32.111601.103036",
536 publisher = "Annual Reviews",
537 notes = "si self interstitial, tbmd, virial stress",
540 @Article{al-mushadani03,
541 title = "Free-energy calculations of intrinsic point defects in
543 author = "O. K. Al-Mushadani and R. J. Needs",
544 journal = "Phys. Rev. B",
551 doi = "10.1103/PhysRevB.68.235205",
552 publisher = "American Physical Society",
553 notes = "formation energies of intrinisc point defects in
554 silicon, si self interstitials, free energy",
557 @Article{goedecker02,
558 title = "A Fourfold Coordinated Point Defect in Silicon",
559 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
560 journal = "Phys. Rev. Lett.",
567 doi = "10.1103/PhysRevLett.88.235501",
568 publisher = "American Physical Society",
569 notes = "first time ffcd, fourfold coordinated point defect in
574 title = "Ab initio molecular dynamics simulation of
575 self-interstitial diffusion in silicon",
576 author = "Beat Sahli and Wolfgang Fichtner",
577 journal = "Phys. Rev. B",
584 doi = "10.1103/PhysRevB.72.245210",
585 publisher = "American Physical Society",
586 notes = "si self int, diffusion, barrier height, voronoi
591 title = "Ab initio calculations of the interaction between
592 native point defects in silicon",
593 journal = "Mater. Sci. Eng., B",
598 note = "EMRS 2005, Symposium D - Materials Science and Device
599 Issues for Future Technologies",
601 doi = "DOI: 10.1016/j.mseb.2005.08.072",
602 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
603 author = "G. Hobler and G. Kresse",
604 notes = "vasp intrinsic si defect interaction study, capture
609 title = "Ab initio study of self-diffusion in silicon over a
610 wide temperature range: Point defect states and
611 migration mechanisms",
612 author = "Shangyi Ma and Shaoqing Wang",
613 journal = "Phys. Rev. B",
620 doi = "10.1103/PhysRevB.81.193203",
621 publisher = "American Physical Society",
622 notes = "si self interstitial diffusion + refs",
626 title = "Atomistic simulations on the thermal stability of the
627 antisite pair in 3{C}- and 4{H}-Si{C}",
628 author = "M. Posselt and F. Gao and W. J. Weber",
629 journal = "Phys. Rev. B",
636 doi = "10.1103/PhysRevB.73.125206",
637 publisher = "American Physical Society",
641 title = "Correlation between self-diffusion in Si and the
642 migration mechanisms of vacancies and
643 self-interstitials: An atomistic study",
644 author = "M. Posselt and F. Gao and H. Bracht",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.78.035208",
653 publisher = "American Physical Society",
654 notes = "si self-interstitial and vacancy diffusion, stillinger
659 title = "Ab initio and empirical-potential studies of defect
660 properties in $3{C}-Si{C}$",
661 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
663 journal = "Phys. Rev. B",
670 doi = "10.1103/PhysRevB.64.245208",
671 publisher = "American Physical Society",
672 notes = "defects in 3c-sic",
676 title = "Empirical potential approach for defect properties in
678 journal = "Nucl. Instrum. Methods Phys. Res. B",
685 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
686 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
687 author = "Fei Gao and William J. Weber",
688 keywords = "Empirical potential",
689 keywords = "Defect properties",
690 keywords = "Silicon carbide",
691 keywords = "Computer simulation",
692 notes = "sic potential, brenner type, like erhart/albe",
696 title = "Atomistic study of intrinsic defect migration in
698 author = "Fei Gao and William J. Weber and M. Posselt and V.
700 journal = "Phys. Rev. B",
707 doi = "10.1103/PhysRevB.69.245205",
708 publisher = "American Physical Society",
709 notes = "defect migration in sic",
713 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
716 title = "Ab Initio atomic simulations of antisite pair recovery
717 in cubic silicon carbide",
720 journal = "Appl. Phys. Lett.",
726 keywords = "ab initio calculations; silicon compounds; antisite
727 defects; wide band gap semiconductors; molecular
728 dynamics method; density functional theory;
729 electron-hole recombination; photoluminescence;
730 impurities; diffusion",
731 URL = "http://link.aip.org/link/?APL/90/221915/1",
732 doi = "10.1063/1.2743751",
735 @Article{mattoni2002,
736 title = "Self-interstitial trapping by carbon complexes in
737 crystalline silicon",
738 author = "A. Mattoni and F. Bernardini and L. Colombo",
739 journal = "Phys. Rev. B",
746 doi = "10.1103/PhysRevB.66.195214",
747 publisher = "American Physical Society",
748 notes = "c in c-si, diffusion, interstitial configuration +
749 links, interaction of carbon and silicon interstitials,
750 tersoff suitability",
754 title = "Calculations of Silicon Self-Interstitial Defects",
755 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
757 journal = "Phys. Rev. Lett.",
760 pages = "2351--2354",
764 doi = "10.1103/PhysRevLett.83.2351",
765 publisher = "American Physical Society",
766 notes = "nice images of the defects, si defect overview +
771 title = "Identification of the migration path of interstitial
773 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
774 journal = "Phys. Rev. B",
777 pages = "7439--7442",
781 doi = "10.1103/PhysRevB.50.7439",
782 publisher = "American Physical Society",
783 notes = "carbon interstitial migration path shown, 001 c-si
788 title = "Theory of carbon-carbon pairs in silicon",
789 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
790 journal = "Phys. Rev. B",
793 pages = "9845--9850",
797 doi = "10.1103/PhysRevB.58.9845",
798 publisher = "American Physical Society",
799 notes = "c_i c_s pair configuration, theoretical results",
803 title = "Bistable interstitial-carbon--substitutional-carbon
805 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
807 journal = "Phys. Rev. B",
810 pages = "5765--5783",
814 doi = "10.1103/PhysRevB.42.5765",
815 publisher = "American Physical Society",
816 notes = "c_i c_s pair configuration, experimental results",
820 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
821 Shifeng Lu and Xiang-Yang Liu",
823 title = "Ab initio modeling and experimental study of {C}--{B}
827 journal = "Appl. Phys. Lett.",
831 keywords = "silicon; boron; carbon; elemental semiconductors;
832 impurity-defect interactions; ab initio calculations;
833 secondary ion mass spectra; diffusion; interstitials",
834 URL = "http://link.aip.org/link/?APL/80/52/1",
835 doi = "10.1063/1.1430505",
836 notes = "c-c 100 split, lower as a and b states of capaz",
840 title = "Ab initio investigation of carbon-related defects in
842 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
844 journal = "Phys. Rev. B",
847 pages = "12554--12557",
851 doi = "10.1103/PhysRevB.47.12554",
852 publisher = "American Physical Society",
853 notes = "c interstitials in crystalline silicon",
857 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
859 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
860 Sokrates T. Pantelides",
861 journal = "Phys. Rev. Lett.",
864 pages = "1814--1817",
868 doi = "10.1103/PhysRevLett.52.1814",
869 publisher = "American Physical Society",
870 notes = "microscopic theory diffusion silicon dft migration
875 title = "Unified Approach for Molecular Dynamics and
876 Density-Functional Theory",
877 author = "R. Car and M. Parrinello",
878 journal = "Phys. Rev. Lett.",
881 pages = "2471--2474",
885 doi = "10.1103/PhysRevLett.55.2471",
886 publisher = "American Physical Society",
887 notes = "car parrinello method, dft and md",
891 title = "Short-range order, bulk moduli, and physical trends in
892 c-$Si1-x$$Cx$ alloys",
893 author = "P. C. Kelires",
894 journal = "Phys. Rev. B",
897 pages = "8784--8787",
901 doi = "10.1103/PhysRevB.55.8784",
902 publisher = "American Physical Society",
903 notes = "c strained si, montecarlo md, bulk moduli, next
908 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
909 Application to the $Si1-x-yGexCy$ System",
910 author = "P. C. Kelires",
911 journal = "Phys. Rev. Lett.",
914 pages = "1114--1117",
918 doi = "10.1103/PhysRevLett.75.1114",
919 publisher = "American Physical Society",
920 notes = "mc md, strain compensation in si ge by c insertion",
924 title = "Low temperature electron irradiation of silicon
926 journal = "Solid State Communications",
933 doi = "DOI: 10.1016/0038-1098(70)90074-8",
934 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
935 author = "A. R. Bean and R. C. Newman",
939 title = "{EPR} Observation of the Isolated Interstitial Carbon
941 author = "G. D. Watkins and K. L. Brower",
942 journal = "Phys. Rev. Lett.",
945 pages = "1329--1332",
949 doi = "10.1103/PhysRevLett.36.1329",
950 publisher = "American Physical Society",
951 notes = "epr observations of 100 interstitial carbon atom in
956 title = "{EPR} identification of the single-acceptor state of
957 interstitial carbon in silicon",
958 author = "L. W. Song and G. D. Watkins",
959 journal = "Phys. Rev. B",
962 pages = "5759--5764",
966 doi = "10.1103/PhysRevB.42.5759",
967 publisher = "American Physical Society",
968 notes = "carbon diffusion in silicon",
972 author = "A K Tipping and R C Newman",
973 title = "The diffusion coefficient of interstitial carbon in
975 journal = "Semicond. Sci. Technol.",
979 URL = "http://stacks.iop.org/0268-1242/2/315",
981 notes = "diffusion coefficient of carbon interstitials in
986 title = "Carbon incorporation into Si at high concentrations by
987 ion implantation and solid phase epitaxy",
988 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
989 Picraux and J. K. Watanabe and J. W. Mayer",
990 journal = "J. Appl. Phys.",
995 doi = "10.1063/1.360806",
996 notes = "strained silicon, carbon supersaturation",
999 @Article{laveant2002,
1000 title = "Epitaxy of carbon-rich silicon with {MBE}",
1001 journal = "Mater. Sci. Eng., B",
1007 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1008 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1009 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1011 notes = "low c in si, tensile stress to compensate compressive
1012 stress, avoid sic precipitation",
1016 title = "The formation of swirl defects in silicon by
1017 agglomeration of self-interstitials",
1018 journal = "Journal of Crystal Growth",
1025 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1026 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1027 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1028 notes = "b-swirl: si + c interstitial agglomerates, c-si
1033 title = "Microdefects in silicon and their relation to point
1035 journal = "Journal of Crystal Growth",
1042 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1043 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1044 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1045 notes = "swirl review",
1049 author = "P. Werner and S. Eichler and G. Mariani and R.
1050 K{\"{o}}gler and W. Skorupa",
1051 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1052 silicon by transmission electron microscopy",
1055 journal = "Appl. Phys. Lett.",
1059 keywords = "silicon; ion implantation; carbon; crystal defects;
1060 transmission electron microscopy; annealing; positron
1061 annihilation; secondary ion mass spectroscopy; buried
1062 layers; precipitation",
1063 URL = "http://link.aip.org/link/?APL/70/252/1",
1064 doi = "10.1063/1.118381",
1065 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1069 @InProceedings{werner96,
1070 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1072 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1073 International Conference on",
1074 title = "{TEM} investigation of {C}-Si defects in carbon
1081 doi = "10.1109/IIT.1996.586497",
1083 notes = "c-si agglomerates dumbbells",
1087 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1090 title = "Carbon diffusion in silicon",
1093 journal = "Appl. Phys. Lett.",
1096 pages = "2465--2467",
1097 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1098 secondary ion mass spectra; semiconductor epitaxial
1099 layers; annealing; impurity-defect interactions;
1100 impurity distribution",
1101 URL = "http://link.aip.org/link/?APL/73/2465/1",
1102 doi = "10.1063/1.122483",
1103 notes = "c diffusion in si, kick out mechnism",
1107 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1109 title = "Self-interstitial enhanced carbon diffusion in
1113 journal = "Applied Physics Letters",
1117 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1118 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1119 TEMPERATURE; IMPURITIES",
1120 URL = "http://link.aip.org/link/?APL/45/268/1",
1121 doi = "10.1063/1.95167",
1122 notes = "c diffusion due to si self-interstitials",
1126 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1127 Picraux and J. K. Watanabe and J. W. Mayer",
1129 title = "Precipitation and relaxation in strained Si[sub 1 -
1130 y]{C}[sub y]/Si heterostructures",
1133 journal = "J. Appl. Phys.",
1136 pages = "3656--3668",
1137 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1138 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1139 doi = "10.1063/1.357429",
1140 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1141 precipitation by substitutional carbon, coherent prec,
1142 coherent to incoherent transition strain vs interface
1147 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1150 title = "Investigation of the high temperature behavior of
1151 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1154 journal = "J. Appl. Phys.",
1157 pages = "1934--1937",
1158 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1159 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1160 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1161 TEMPERATURE RANGE 04001000 K",
1162 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1163 doi = "10.1063/1.358826",
1167 title = "Prospects for device implementation of wide band gap
1169 author = "J. H. Edgar",
1170 journal = "J. Mater. Res.",
1175 doi = "10.1557/JMR.1992.0235",
1176 notes = "properties wide band gap semiconductor, sic
1180 @Article{zirkelbach2007,
1181 title = "Monte Carlo simulation study of a selforganisation
1182 process leading to ordered precipitate structures",
1183 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1185 journal = "Nucl. Instr. and Meth. B",
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1193 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1197 @Article{zirkelbach2006,
1198 title = "Monte-Carlo simulation study of the self-organization
1199 of nanometric amorphous precipitates in regular arrays
1200 during ion irradiation",
1201 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1203 journal = "Nucl. Instr. and Meth. B",
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1215 @Article{zirkelbach2005,
1216 title = "Modelling of a selforganization process leading to
1217 periodic arrays of nanometric amorphous precipitates by
1219 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1221 journal = "Comp. Mater. Sci.",
1228 doi = "doi:10.1016/j.commatsci.2004.12.016",
1229 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1233 @Article{zirkelbach09,
1234 title = "Molecular dynamics simulation of defect formation and
1235 precipitation in heavily carbon doped silicon",
1236 journal = "Mater. Sci. Eng., B",
1241 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1242 Silicon Materials Research for Electronic and
1243 Photovoltaic Applications",
1245 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1246 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1247 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1249 keywords = "Silicon",
1250 keywords = "Carbon",
1251 keywords = "Silicon carbide",
1252 keywords = "Nucleation",
1253 keywords = "Defect formation",
1254 keywords = "Molecular dynamics simulations",
1257 @Article{zirkelbach10,
1258 title = "Defects in carbon implanted silicon calculated by
1259 classical potentials and first-principles methods",
1260 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1261 K. N. Lindner and W. G. Schmidt and E. Rauls",
1262 journal = "Phys. Rev. B",
1269 doi = "10.1103/PhysRevB.82.094110",
1270 publisher = "American Physical Society",
1273 @Article{zirkelbach11a,
1274 title = "First principles study of defects in carbon implanted
1276 journal = "to be published",
1281 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1282 and W. G. Schmidt and E. Rauls",
1285 @Article{zirkelbach11b,
1287 journal = "to be published",
1292 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1293 K. N. Lindner and W. G. Schmidt and E. Rauls",
1297 author = "J. K. N. Lindner and A. Frohnwieser and B.
1298 Rauschenbach and B. Stritzker",
1299 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1301 journal = "MRS Online Proceedings Library",
1306 doi = "10.1557/PROC-354-171",
1307 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1308 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1309 notes = "first time ibs at moderate temperatures",
1313 title = "Formation of buried epitaxial silicon carbide layers
1314 in silicon by ion beam synthesis",
1315 journal = "Materials Chemistry and Physics",
1322 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1323 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1324 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1325 Götz and A. Frohnwieser and B. Rauschenbach and B.
1327 notes = "dose window",
1330 @Article{calcagno96,
1331 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1333 journal = "Nuclear Instruments and Methods in Physics Research
1334 Section B: Beam Interactions with Materials and Atoms",
1339 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1340 New Trends in Ion Beam Processing of Materials",
1342 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1343 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1344 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1345 Grimaldi and P. Musumeci",
1346 notes = "dose window, graphitic bonds",
1350 title = "Mechanisms of Si{C} Formation in the Ion Beam
1351 Synthesis of 3{C}-Si{C} Layers in Silicon",
1352 journal = "Materials Science Forum",
1357 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1358 URL = "http://www.scientific.net/MSF.264-268.215",
1359 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1360 notes = "intermediate temperature for sharp interface + good
1365 title = "Controlling the density distribution of Si{C}
1366 nanocrystals for the ion beam synthesis of buried Si{C}
1368 journal = "Nucl. Instrum. Methods Phys. Res. B",
1375 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1376 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1377 author = "J. K. N. Lindner and B. Stritzker",
1378 notes = "two-step implantation process",
1381 @Article{lindner99_2,
1382 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1384 journal = "Nucl. Instrum. Methods Phys. Res. B",
1390 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1391 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1392 author = "J. K. N. Lindner and B. Stritzker",
1393 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1397 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1398 Basic physical processes",
1399 journal = "Nucl. Instrum. Methods Phys. Res. B",
1406 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1407 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1408 author = "J{\"{o}}rg K. N. Lindner",
1412 title = "High-dose carbon implantations into silicon:
1413 fundamental studies for new technological tricks",
1414 author = "J. K. N. Lindner",
1415 journal = "Appl. Phys. A",
1419 doi = "10.1007/s00339-002-2062-8",
1420 notes = "ibs, burried sic layers",
1424 title = "On the balance between ion beam induced nanoparticle
1425 formation and displacive precipitate resolution in the
1427 journal = "Mater. Sci. Eng., C",
1432 note = "Current Trends in Nanoscience - from Materials to
1435 doi = "DOI: 10.1016/j.msec.2005.09.099",
1436 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1437 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1439 notes = "c int diffusion barrier",
1443 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1444 application in buffer layer for Ga{N} epitaxial
1446 journal = "Applied Surface Science",
1451 note = "APHYS'03 Special Issue",
1453 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1454 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1455 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1456 and S. Nishio and K. Yasuda and Y. Ishigami",
1457 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1460 @Article{yamamoto04,
1461 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1462 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1463 implantation into Si(1Â 1Â 1) substrate",
1464 journal = "Journal of Crystal Growth",
1469 note = "Proceedings of the 11th Biennial (US) Workshop on
1470 Organometallic Vapor Phase Epitaxy (OMVPE)",
1472 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1473 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1474 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1475 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1476 notes = "gan on 3c-sic",
1480 title = "Substrates for gallium nitride epitaxy",
1481 journal = "Materials Science and Engineering: R: Reports",
1488 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1489 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1490 author = "L. Liu and J. H. Edgar",
1491 notes = "gan substrates",
1494 @Article{takeuchi91,
1495 title = "Growth of single crystalline Ga{N} film on Si
1496 substrate using 3{C}-Si{C} as an intermediate layer",
1497 journal = "Journal of Crystal Growth",
1504 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1505 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1506 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1507 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1508 notes = "gan on 3c-sic (first time?)",
1512 author = "B. J. Alder and T. E. Wainwright",
1513 title = "Phase Transition for a Hard Sphere System",
1516 journal = "J. Chem. Phys.",
1519 pages = "1208--1209",
1520 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1521 doi = "10.1063/1.1743957",
1525 author = "B. J. Alder and T. E. Wainwright",
1526 title = "Studies in Molecular Dynamics. {I}. General Method",
1529 journal = "J. Chem. Phys.",
1533 URL = "http://link.aip.org/link/?JCP/31/459/1",
1534 doi = "10.1063/1.1730376",
1537 @Article{tersoff_si1,
1538 title = "New empirical model for the structural properties of
1540 author = "J. Tersoff",
1541 journal = "Phys. Rev. Lett.",
1548 doi = "10.1103/PhysRevLett.56.632",
1549 publisher = "American Physical Society",
1552 @Article{tersoff_si2,
1553 title = "New empirical approach for the structure and energy of
1555 author = "J. Tersoff",
1556 journal = "Phys. Rev. B",
1559 pages = "6991--7000",
1563 doi = "10.1103/PhysRevB.37.6991",
1564 publisher = "American Physical Society",
1567 @Article{tersoff_si3,
1568 title = "Empirical interatomic potential for silicon with
1569 improved elastic properties",
1570 author = "J. Tersoff",
1571 journal = "Phys. Rev. B",
1574 pages = "9902--9905",
1578 doi = "10.1103/PhysRevB.38.9902",
1579 publisher = "American Physical Society",
1583 title = "Empirical Interatomic Potential for Carbon, with
1584 Applications to Amorphous Carbon",
1585 author = "J. Tersoff",
1586 journal = "Phys. Rev. Lett.",
1589 pages = "2879--2882",
1593 doi = "10.1103/PhysRevLett.61.2879",
1594 publisher = "American Physical Society",
1598 title = "Modeling solid-state chemistry: Interatomic potentials
1599 for multicomponent systems",
1600 author = "J. Tersoff",
1601 journal = "Phys. Rev. B",
1604 pages = "5566--5568",
1608 doi = "10.1103/PhysRevB.39.5566",
1609 publisher = "American Physical Society",
1613 title = "Carbon defects and defect reactions in silicon",
1614 author = "J. Tersoff",
1615 journal = "Phys. Rev. Lett.",
1618 pages = "1757--1760",
1622 doi = "10.1103/PhysRevLett.64.1757",
1623 publisher = "American Physical Society",
1627 title = "Point defects and dopant diffusion in silicon",
1628 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1629 journal = "Rev. Mod. Phys.",
1636 doi = "10.1103/RevModPhys.61.289",
1637 publisher = "American Physical Society",
1641 title = "Silicon carbide: synthesis and processing",
1642 journal = "Nucl. Instrum. Methods Phys. Res. B",
1647 note = "Radiation Effects in Insulators",
1649 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1650 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1651 author = "W. Wesch",
1655 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1656 Palmour and J. A. Edmond",
1657 journal = "Proceedings of the IEEE",
1658 title = "Thin film deposition and microelectronic and
1659 optoelectronic device fabrication and characterization
1660 in monocrystalline alpha and beta silicon carbide",
1666 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1667 diode;SiC;dry etching;electrical
1668 contacts;etching;impurity incorporation;optoelectronic
1669 device fabrication;solid-state devices;surface
1670 chemistry;Schottky effect;Schottky gate field effect
1671 transistors;Schottky-barrier
1672 diodes;etching;heterojunction bipolar
1673 transistors;insulated gate field effect
1674 transistors;light emitting diodes;semiconductor
1675 materials;semiconductor thin films;silicon compounds;",
1676 doi = "10.1109/5.90132",
1678 notes = "sic growth methods",
1682 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1683 Lin and B. Sverdlov and M. Burns",
1685 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1686 ZnSe-based semiconductor device technologies",
1689 journal = "J. Appl. Phys.",
1692 pages = "1363--1398",
1693 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1694 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1695 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1697 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1698 doi = "10.1063/1.358463",
1699 notes = "sic intro, properties",
1703 author = "Noch Unbekannt",
1704 title = "How to find references",
1705 journal = "Journal of Applied References",
1712 title = "Atomistic simulation of thermomechanical properties of
1714 author = "Meijie Tang and Sidney Yip",
1715 journal = "Phys. Rev. B",
1718 pages = "15150--15159",
1721 doi = "10.1103/PhysRevB.52.15150",
1722 notes = "modified tersoff, scale cutoff with volume, promising
1723 tersoff reparametrization",
1724 publisher = "American Physical Society",
1728 title = "Silicon carbide as a new {MEMS} technology",
1729 journal = "Sensors and Actuators A: Physical",
1735 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1736 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1737 author = "Pasqualina M. Sarro",
1739 keywords = "Silicon carbide",
1740 keywords = "Micromachining",
1741 keywords = "Mechanical stress",
1745 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1746 semiconductor for high-temperature applications: {A}
1748 journal = "Solid-State Electronics",
1751 pages = "1409--1422",
1754 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1755 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1756 author = "J. B. Casady and R. W. Johnson",
1757 notes = "sic intro",
1760 @Article{giancarli98,
1761 title = "Design requirements for Si{C}/Si{C} composites
1762 structural material in fusion power reactor blankets",
1763 journal = "Fusion Engineering and Design",
1769 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1770 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1771 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1772 Marois and N. B. Morley and J. F. Salavy",
1776 title = "Electrical and optical characterization of Si{C}",
1777 journal = "Physica B: Condensed Matter",
1783 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1784 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1785 author = "G. Pensl and W. J. Choyke",
1789 title = "Investigation of growth processes of ingots of silicon
1790 carbide single crystals",
1791 journal = "J. Cryst. Growth",
1796 notes = "modified lely process",
1798 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1799 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1800 author = "Yu. M. Tairov and V. F. Tsvetkov",
1804 title = "General principles of growing large-size single
1805 crystals of various silicon carbide polytypes",
1806 journal = "Journal of Crystal Growth",
1813 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1814 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1815 author = "Yu.M. Tairov and V. F. Tsvetkov",
1819 title = "Si{C} boule growth by sublimation vapor transport",
1820 journal = "Journal of Crystal Growth",
1827 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1828 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1829 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1830 R. H. Hopkins and W. J. Choyke",
1834 title = "Growth of large Si{C} single crystals",
1835 journal = "Journal of Crystal Growth",
1842 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
1843 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
1844 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
1845 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1850 title = "Control of polytype formation by surface energy
1851 effects during the growth of Si{C} monocrystals by the
1852 sublimation method",
1853 journal = "Journal of Crystal Growth",
1860 doi = "DOI: 10.1016/0022-0248(93)90397-F",
1861 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
1862 author = "R. A. Stein and P. Lanig",
1863 notes = "6h and 4h, sublimation technique",
1867 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1870 title = "Production of large-area single-crystal wafers of
1871 cubic Si{C} for semiconductor devices",
1874 journal = "Appl. Phys. Lett.",
1878 keywords = "silicon carbides; layers; chemical vapor deposition;
1880 URL = "http://link.aip.org/link/?APL/42/460/1",
1881 doi = "10.1063/1.93970",
1882 notes = "cvd of 3c-sic on si, sic buffer layer",
1886 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1887 and Hiroyuki Matsunami",
1889 title = "Epitaxial growth and electric characteristics of cubic
1893 journal = "J. Appl. Phys.",
1896 pages = "4889--4893",
1897 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1898 doi = "10.1063/1.338355",
1899 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1904 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1906 title = "Growth and Characterization of Cubic Si{C}
1907 Single-Crystal Films on Si",
1910 journal = "Journal of The Electrochemical Society",
1913 pages = "1558--1565",
1914 keywords = "semiconductor materials; silicon compounds; carbon
1915 compounds; crystal morphology; electron mobility",
1916 URL = "http://link.aip.org/link/?JES/134/1558/1",
1917 doi = "10.1149/1.2100708",
1918 notes = "blue light emitting diodes (led)",
1921 @Article{powell87_2,
1922 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
1923 C. M. Chorey and T. T. Cheng and P. Pirouz",
1925 title = "Improved beta-Si{C} heteroepitaxial films using
1926 off-axis Si substrates",
1929 journal = "Applied Physics Letters",
1933 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
1934 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
1935 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
1936 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
1937 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
1938 URL = "http://link.aip.org/link/?APL/51/823/1",
1939 doi = "10.1063/1.98824",
1940 notes = "improved sic on off-axis si substrates, reduced apbs",
1944 title = "Crystal growth of Si{C} by step-controlled epitaxy",
1945 journal = "Journal of Crystal Growth",
1952 doi = "DOI: 10.1016/0022-0248(90)90013-B",
1953 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1954 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
1956 notes = "step-controlled epitaxy model",
1960 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1961 and Hiroyuki Matsunami",
1962 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1966 journal = "J. Appl. Phys.",
1970 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1971 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1973 URL = "http://link.aip.org/link/?JAP/73/726/1",
1974 doi = "10.1063/1.353329",
1975 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1978 @Article{powell90_2,
1979 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1980 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1981 Yoganathan and J. Yang and P. Pirouz",
1983 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
1984 vicinal (0001) 6{H}-Si{C} wafers",
1987 journal = "Applied Physics Letters",
1990 pages = "1442--1444",
1991 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1992 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
1993 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
1994 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
1995 URL = "http://link.aip.org/link/?APL/56/1442/1",
1996 doi = "10.1063/1.102492",
1997 notes = "cvd of 6h-sic on 6h-sic",
2001 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2003 title = "Chemical vapor deposition and characterization of
2004 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2008 journal = "Journal of Applied Physics",
2011 pages = "2672--2679",
2012 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2013 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2014 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2015 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2016 PHASE EPITAXY; CRYSTAL ORIENTATION",
2017 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2018 doi = "10.1063/1.341608",
2022 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2023 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2024 Yoganathan and J. Yang and P. Pirouz",
2026 title = "Growth of improved quality 3{C}-Si{C} films on
2027 6{H}-Si{C} substrates",
2030 journal = "Appl. Phys. Lett.",
2033 pages = "1353--1355",
2034 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2035 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2036 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2038 URL = "http://link.aip.org/link/?APL/56/1353/1",
2039 doi = "10.1063/1.102512",
2040 notes = "cvd of 3c-sic on 6h-sic",
2044 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2045 Rozgonyi and K. L. More",
2047 title = "An examination of double positioning boundaries and
2048 interface misfit in beta-Si{C} films on alpha-Si{C}
2052 journal = "Journal of Applied Physics",
2055 pages = "2645--2650",
2056 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2057 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2058 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2059 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2060 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2061 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2062 doi = "10.1063/1.341004",
2066 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2067 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2068 and W. J. Choyke and L. Clemen and M. Yoganathan",
2070 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2071 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2074 journal = "Applied Physics Letters",
2078 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2079 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2080 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2081 URL = "http://link.aip.org/link/?APL/59/333/1",
2082 doi = "10.1063/1.105587",
2086 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2087 Thokala and M. J. Loboda",
2089 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2090 films on 6{H}-Si{C} by chemical vapor deposition from
2094 journal = "J. Appl. Phys.",
2097 pages = "1271--1273",
2098 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2099 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2101 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2102 doi = "10.1063/1.360368",
2103 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2107 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2108 properties of its p-n junction",
2109 journal = "Journal of Crystal Growth",
2116 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2117 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2118 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2120 notes = "first time ssmbe of 3c-sic on 6h-sic",
2124 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2125 [alpha]-Si{C}(0001) at low temperatures by solid-source
2126 molecular beam epitaxy",
2127 journal = "J. Cryst. Growth",
2133 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2134 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2135 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2136 Schr{\"{o}}ter and W. Richter",
2137 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2140 @Article{fissel95_apl,
2141 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2143 title = "Low-temperature growth of Si{C} thin films on Si and
2144 6{H}--Si{C} by solid-source molecular beam epitaxy",
2147 journal = "Appl. Phys. Lett.",
2150 pages = "3182--3184",
2151 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2153 URL = "http://link.aip.org/link/?APL/66/3182/1",
2154 doi = "10.1063/1.113716",
2155 notes = "mbe 3c-sic on si and 6h-sic",
2159 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2160 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2162 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2163 migration enhanced epitaxy controlled to an atomic
2164 level using surface superstructures",
2167 journal = "Applied Physics Letters",
2170 pages = "1204--1206",
2171 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2172 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2174 URL = "http://link.aip.org/link/?APL/68/1204/1",
2175 doi = "10.1063/1.115969",
2176 notes = "ss mbe sic, superstructure, reconstruction",
2180 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2181 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2182 C. M. Bertoni and A. Catellani",
2183 journal = "Phys. Rev. Lett.",
2190 doi = "10.1103/PhysRevLett.91.136101",
2191 publisher = "American Physical Society",
2192 notes = "dft calculations mbe sic growth",
2196 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2198 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2202 journal = "Appl. Phys. Lett.",
2206 URL = "http://link.aip.org/link/?APL/18/509/1",
2207 doi = "10.1063/1.1653516",
2208 notes = "first time sic by ibs, follow cites for precipitation
2213 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2214 and E. V. Lubopytova",
2215 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2216 by ion implantation",
2217 publisher = "Taylor \& Francis",
2219 journal = "Radiation Effects",
2223 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2224 notes = "3c-sic for different temperatures, amorphous, poly,
2225 single crystalline",
2228 @Article{akimchenko80,
2229 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2230 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2231 title = "Structure and optical properties of silicon implanted
2232 by high doses of 70 and 310 ke{V} carbon ions",
2233 publisher = "Taylor \& Francis",
2235 journal = "Radiation Effects",
2239 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2240 notes = "3c-sic nucleation by thermal spikes",
2244 title = "Structure and annealing properties of silicon carbide
2245 thin layers formed by implantation of carbon ions in
2247 journal = "Thin Solid Films",
2254 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2255 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2256 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2261 title = "Characteristics of the synthesis of [beta]-Si{C} by
2262 the implantation of carbon ions into silicon",
2263 journal = "Thin Solid Films",
2270 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2271 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2272 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2277 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2278 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2279 Chater and J. A. Iulner and J. Davis",
2280 title = "Formation mechanisms and structures of insulating
2281 compounds formed in silicon by ion beam synthesis",
2282 publisher = "Taylor \& Francis",
2284 journal = "Radiation Effects",
2288 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2289 notes = "ibs, comparison with sio and sin, higher temp or
2294 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2295 J. Davis and G. E. Celler",
2297 title = "Formation of buried layers of beta-Si{C} using ion
2298 beam synthesis and incoherent lamp annealing",
2301 journal = "Appl. Phys. Lett.",
2304 pages = "2242--2244",
2305 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2306 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2307 URL = "http://link.aip.org/link/?APL/51/2242/1",
2308 doi = "10.1063/1.98953",
2309 notes = "nice tem images, sic by ibs",
2313 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2314 and M. Olivier and A. M. Papon and G. Rolland",
2316 title = "High-temperature ion beam synthesis of cubic Si{C}",
2319 journal = "Journal of Applied Physics",
2322 pages = "2908--2912",
2323 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2324 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2325 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2326 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2327 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2328 REACTIONS; MONOCRYSTALS",
2329 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2330 doi = "10.1063/1.346092",
2331 notes = "triple energy implantation to overcome high annealing
2336 author = "R. I. Scace and G. A. Slack",
2338 title = "Solubility of Carbon in Silicon and Germanium",
2341 journal = "J. Chem. Phys.",
2344 pages = "1551--1555",
2345 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2346 doi = "10.1063/1.1730236",
2347 notes = "solubility of c in c-si, si-c phase diagram",
2351 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2353 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2354 Laboratories Eindhoven Netherlands Eindhoven
2356 title = "Boron implantations in silicon: {A} comparison of
2357 charge carrier and boron concentration profiles",
2358 journal = "Applied Physics A: Materials Science &
2360 publisher = "Springer Berlin / Heidelberg",
2362 keyword = "Physics and Astronomy",
2366 URL = "http://dx.doi.org/10.1007/BF00884267",
2367 note = "10.1007/BF00884267",
2369 notes = "first time ted (only for boron?)",
2373 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2376 title = "Rapid annealing and the anomalous diffusion of ion
2377 implanted boron into silicon",
2380 journal = "Applied Physics Letters",
2384 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2385 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2386 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2387 URL = "http://link.aip.org/link/?APL/50/416/1",
2388 doi = "10.1063/1.98160",
2389 notes = "ted of boron in si",
2393 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2396 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2397 time, and matrix dependence of atomic and electrical
2401 journal = "Journal of Applied Physics",
2404 pages = "6191--6198",
2405 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2406 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2407 CRYSTALS; AMORPHIZATION",
2408 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2409 doi = "10.1063/1.346910",
2410 notes = "ted of boron in si",
2414 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2415 F. W. Saris and W. Vandervorst",
2417 title = "Role of {C} and {B} clusters in transient diffusion of
2421 journal = "Appl. Phys. Lett.",
2424 pages = "1150--1152",
2425 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2426 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2428 URL = "http://link.aip.org/link/?APL/68/1150/1",
2429 doi = "10.1063/1.115706",
2430 notes = "suppression of transient enhanced diffusion (ted)",
2434 title = "Implantation and transient boron diffusion: the role
2435 of the silicon self-interstitial",
2436 journal = "Nucl. Instrum. Methods Phys. Res. B",
2441 note = "Selected Papers of the Tenth International Conference
2442 on Ion Implantation Technology (IIT '94)",
2444 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2445 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2446 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2451 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2452 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2453 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2456 title = "Physical mechanisms of transient enhanced dopant
2457 diffusion in ion-implanted silicon",
2460 journal = "J. Appl. Phys.",
2463 pages = "6031--6050",
2464 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2465 doi = "10.1063/1.364452",
2466 notes = "ted, transient enhanced diffusion, c silicon trap",
2470 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2472 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2473 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2476 journal = "Appl. Phys. Lett.",
2480 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2481 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2482 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2484 URL = "http://link.aip.org/link/?APL/64/324/1",
2485 doi = "10.1063/1.111195",
2486 notes = "beta sic nano crystals in si, mbe, annealing",
2490 author = "Richard A. Soref",
2492 title = "Optical band gap of the ternary semiconductor Si[sub 1
2493 - x - y]Ge[sub x]{C}[sub y]",
2496 journal = "J. Appl. Phys.",
2499 pages = "2470--2472",
2500 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2501 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2503 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2504 doi = "10.1063/1.349403",
2505 notes = "band gap of strained si by c",
2509 author = "E Kasper",
2510 title = "Superlattices of group {IV} elements, a new
2511 possibility to produce direct band gap material",
2512 journal = "Physica Scripta",
2515 URL = "http://stacks.iop.org/1402-4896/T35/232",
2517 notes = "superlattices, convert indirect band gap into a
2522 author = "H. J. Osten and J. Griesche and S. Scalese",
2524 title = "Substitutional carbon incorporation in epitaxial
2525 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2526 molecular beam epitaxy",
2529 journal = "Appl. Phys. Lett.",
2533 keywords = "molecular beam epitaxial growth; semiconductor growth;
2534 wide band gap semiconductors; interstitials; silicon
2536 URL = "http://link.aip.org/link/?APL/74/836/1",
2537 doi = "10.1063/1.123384",
2538 notes = "substitutional c in si",
2541 @Article{hohenberg64,
2542 title = "Inhomogeneous Electron Gas",
2543 author = "P. Hohenberg and W. Kohn",
2544 journal = "Phys. Rev.",
2547 pages = "B864--B871",
2551 doi = "10.1103/PhysRev.136.B864",
2552 publisher = "American Physical Society",
2553 notes = "density functional theory, dft",
2557 title = "Self-Consistent Equations Including Exchange and
2558 Correlation Effects",
2559 author = "W. Kohn and L. J. Sham",
2560 journal = "Phys. Rev.",
2563 pages = "A1133--A1138",
2567 doi = "10.1103/PhysRev.140.A1133",
2568 publisher = "American Physical Society",
2569 notes = "dft, exchange and correlation",
2573 title = "Strain-stabilized highly concentrated pseudomorphic
2574 $Si1-x$$Cx$ layers in Si",
2575 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2577 journal = "Phys. Rev. Lett.",
2580 pages = "3578--3581",
2584 doi = "10.1103/PhysRevLett.72.3578",
2585 publisher = "American Physical Society",
2586 notes = "high c concentration in si, heterostructure, strained
2591 title = "Electron Transport Model for Strained Silicon-Carbon
2593 author = "Shu-Tong Chang and Chung-Yi Lin",
2594 journal = "Japanese J. Appl. Phys.",
2597 pages = "2257--2262",
2600 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2601 doi = "10.1143/JJAP.44.2257",
2602 publisher = "The Japan Society of Applied Physics",
2603 notes = "enhance of electron mobility in starined si",
2607 author = "H. J. Osten and P. Gaworzewski",
2609 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2610 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2614 journal = "J. Appl. Phys.",
2617 pages = "4977--4981",
2618 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2619 semiconductors; semiconductor epitaxial layers; carrier
2620 density; Hall mobility; interstitials; defect states",
2621 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2622 doi = "10.1063/1.366364",
2623 notes = "charge transport in strained si",
2627 title = "Carbon-mediated aggregation of self-interstitials in
2628 silicon: {A} large-scale molecular dynamics study",
2629 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2630 journal = "Phys. Rev. B",
2637 doi = "10.1103/PhysRevB.69.155214",
2638 publisher = "American Physical Society",
2639 notes = "simulation using promising tersoff reparametrization",
2643 title = "Event-Based Relaxation of Continuous Disordered
2645 author = "G. T. Barkema and Normand Mousseau",
2646 journal = "Phys. Rev. Lett.",
2649 pages = "4358--4361",
2653 doi = "10.1103/PhysRevLett.77.4358",
2654 publisher = "American Physical Society",
2655 notes = "activation relaxation technique, art, speed up slow
2660 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2661 Minoukadeh and F. Willaime",
2663 title = "Some improvements of the activation-relaxation
2664 technique method for finding transition pathways on
2665 potential energy surfaces",
2668 journal = "J. Chem. Phys.",
2674 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2675 surfaces; vacancies (crystal)",
2676 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2677 doi = "10.1063/1.3088532",
2678 notes = "improvements to art, refs for methods to find
2679 transition pathways",
2682 @Article{parrinello81,
2683 author = "M. Parrinello and A. Rahman",
2685 title = "Polymorphic transitions in single crystals: {A} new
2686 molecular dynamics method",
2689 journal = "J. Appl. Phys.",
2692 pages = "7182--7190",
2693 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2694 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2695 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2696 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2697 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2699 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2700 doi = "10.1063/1.328693",
2703 @Article{stillinger85,
2704 title = "Computer simulation of local order in condensed phases
2706 author = "Frank H. Stillinger and Thomas A. Weber",
2707 journal = "Phys. Rev. B",
2710 pages = "5262--5271",
2714 doi = "10.1103/PhysRevB.31.5262",
2715 publisher = "American Physical Society",
2719 title = "Empirical potential for hydrocarbons for use in
2720 simulating the chemical vapor deposition of diamond
2722 author = "Donald W. Brenner",
2723 journal = "Phys. Rev. B",
2726 pages = "9458--9471",
2730 doi = "10.1103/PhysRevB.42.9458",
2731 publisher = "American Physical Society",
2732 notes = "brenner hydro carbons",
2736 title = "Modeling of Covalent Bonding in Solids by Inversion of
2737 Cohesive Energy Curves",
2738 author = "Martin Z. Bazant and Efthimios Kaxiras",
2739 journal = "Phys. Rev. Lett.",
2742 pages = "4370--4373",
2746 doi = "10.1103/PhysRevLett.77.4370",
2747 publisher = "American Physical Society",
2748 notes = "first si edip",
2752 title = "Environment-dependent interatomic potential for bulk
2754 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2756 journal = "Phys. Rev. B",
2759 pages = "8542--8552",
2763 doi = "10.1103/PhysRevB.56.8542",
2764 publisher = "American Physical Society",
2765 notes = "second si edip",
2769 title = "Interatomic potential for silicon defects and
2771 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2772 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2773 journal = "Phys. Rev. B",
2776 pages = "2539--2550",
2780 doi = "10.1103/PhysRevB.58.2539",
2781 publisher = "American Physical Society",
2782 notes = "latest si edip, good dislocation explanation",
2786 title = "{PARCAS} molecular dynamics code",
2787 author = "K. Nordlund",
2792 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2794 author = "Arthur F. Voter",
2795 journal = "Phys. Rev. Lett.",
2798 pages = "3908--3911",
2802 doi = "10.1103/PhysRevLett.78.3908",
2803 publisher = "American Physical Society",
2804 notes = "hyperdynamics, accelerated md",
2808 author = "Arthur F. Voter",
2810 title = "A method for accelerating the molecular dynamics
2811 simulation of infrequent events",
2814 journal = "J. Chem. Phys.",
2817 pages = "4665--4677",
2818 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2819 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2820 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2821 energy functions; surface diffusion; reaction kinetics
2822 theory; potential energy surfaces",
2823 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2824 doi = "10.1063/1.473503",
2825 notes = "improved hyperdynamics md",
2828 @Article{sorensen2000,
2829 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2831 title = "Temperature-accelerated dynamics for simulation of
2835 journal = "J. Chem. Phys.",
2838 pages = "9599--9606",
2839 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2840 MOLECULAR DYNAMICS METHOD; surface diffusion",
2841 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2842 doi = "10.1063/1.481576",
2843 notes = "temperature accelerated dynamics, tad",
2847 title = "Parallel replica method for dynamics of infrequent
2849 author = "Arthur F. Voter",
2850 journal = "Phys. Rev. B",
2853 pages = "R13985--R13988",
2857 doi = "10.1103/PhysRevB.57.R13985",
2858 publisher = "American Physical Society",
2859 notes = "parallel replica method, accelerated md",
2863 author = "Xiongwu Wu and Shaomeng Wang",
2865 title = "Enhancing systematic motion in molecular dynamics
2869 journal = "J. Chem. Phys.",
2872 pages = "9401--9410",
2873 keywords = "molecular dynamics method; argon; Lennard-Jones
2874 potential; crystallisation; liquid theory",
2875 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2876 doi = "10.1063/1.478948",
2877 notes = "self guided md, sgmd, accelerated md, enhancing
2881 @Article{choudhary05,
2882 author = "Devashish Choudhary and Paulette Clancy",
2884 title = "Application of accelerated molecular dynamics schemes
2885 to the production of amorphous silicon",
2888 journal = "J. Chem. Phys.",
2894 keywords = "molecular dynamics method; silicon; glass structure;
2895 amorphous semiconductors",
2896 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2897 doi = "10.1063/1.1878733",
2898 notes = "explanation of sgmd and hyper md, applied to amorphous
2903 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2905 title = "Carbon precipitation in silicon: Why is it so
2909 journal = "Appl. Phys. Lett.",
2912 pages = "3336--3338",
2913 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2914 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2916 URL = "http://link.aip.org/link/?APL/62/3336/1",
2917 doi = "10.1063/1.109063",
2918 notes = "interfacial energy of cubic sic and si, si self
2919 interstitials necessary for precipitation, volume
2920 decrease, high interface energy",
2923 @Article{chaussende08,
2924 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2925 journal = "J. Cryst. Growth",
2930 note = "Proceedings of the E-MRS Conference, Symposium G -
2931 Substrates of Wide Bandgap Materials",
2933 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2934 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2935 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2936 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2937 and A. Andreadou and E. K. Polychroniadis and C.
2938 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2939 notes = "3c-sic crystal growth, sic fabrication + links,
2943 @Article{chaussende07,
2944 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2945 title = "Status of Si{C} bulk growth processes",
2946 journal = "Journal of Physics D: Applied Physics",
2950 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2952 notes = "review of sic single crystal growth methods, process
2957 title = "Forces in Molecules",
2958 author = "R. P. Feynman",
2959 journal = "Phys. Rev.",
2966 doi = "10.1103/PhysRev.56.340",
2967 publisher = "American Physical Society",
2968 notes = "hellmann feynman forces",
2972 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2973 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2974 their Contrasting Properties",
2975 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2977 journal = "Phys. Rev. Lett.",
2984 doi = "10.1103/PhysRevLett.84.943",
2985 publisher = "American Physical Society",
2986 notes = "si sio2 and sic sio2 interface",
2989 @Article{djurabekova08,
2990 title = "Atomistic simulation of the interface structure of Si
2991 nanocrystals embedded in amorphous silica",
2992 author = "Flyura Djurabekova and Kai Nordlund",
2993 journal = "Phys. Rev. B",
3000 doi = "10.1103/PhysRevB.77.115325",
3001 publisher = "American Physical Society",
3002 notes = "nc-si in sio2, interface energy, nc construction,
3003 angular distribution, coordination",
3007 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3008 W. Liang and J. Zou",
3010 title = "Nature of interfacial defects and their roles in
3011 strain relaxation at highly lattice mismatched
3012 3{C}-Si{C}/Si (001) interface",
3015 journal = "J. Appl. Phys.",
3021 keywords = "anelastic relaxation; crystal structure; dislocations;
3022 elemental semiconductors; semiconductor growth;
3023 semiconductor thin films; silicon; silicon compounds;
3024 stacking faults; wide band gap semiconductors",
3025 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3026 doi = "10.1063/1.3234380",
3027 notes = "sic/si interface, follow refs, tem image
3028 deconvolution, dislocation defects",
3031 @Article{kitabatake93,
3032 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3035 title = "Simulations and experiments of Si{C} heteroepitaxial
3036 growth on Si(001) surface",
3039 journal = "J. Appl. Phys.",
3042 pages = "4438--4445",
3043 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3044 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3045 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3046 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3047 doi = "10.1063/1.354385",
3048 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3052 @Article{kitabatake97,
3053 author = "Makoto Kitabatake",
3054 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3055 Heteroepitaxial Growth",
3056 publisher = "WILEY-VCH Verlag",
3058 journal = "physica status solidi (b)",
3061 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3062 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3063 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3067 title = "Strain relaxation and thermal stability of the
3068 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3070 journal = "Thin Solid Films",
3077 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3078 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3079 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3080 keywords = "Strain relaxation",
3081 keywords = "Interfaces",
3082 keywords = "Thermal stability",
3083 keywords = "Molecular dynamics",
3084 notes = "tersoff sic/si interface study",
3088 title = "Ab initio Study of Misfit Dislocations at the
3089 $Si{C}/Si(001)$ Interface",
3090 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3092 journal = "Phys. Rev. Lett.",
3099 doi = "10.1103/PhysRevLett.89.156101",
3100 publisher = "American Physical Society",
3101 notes = "sic/si interface study",
3104 @Article{pizzagalli03,
3105 title = "Theoretical investigations of a highly mismatched
3106 interface: Si{C}/Si(001)",
3107 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3109 journal = "Phys. Rev. B",
3116 doi = "10.1103/PhysRevB.68.195302",
3117 publisher = "American Physical Society",
3118 notes = "tersoff md and ab initio sic/si interface study",
3122 title = "Atomic configurations of dislocation core and twin
3123 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3124 electron microscopy",
3125 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3126 H. Zheng and J. W. Liang",
3127 journal = "Phys. Rev. B",
3134 doi = "10.1103/PhysRevB.75.184103",
3135 publisher = "American Physical Society",
3136 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3140 @Article{hornstra58,
3141 title = "Dislocations in the diamond lattice",
3142 journal = "Journal of Physics and Chemistry of Solids",
3149 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3150 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3151 author = "J. Hornstra",
3152 notes = "dislocations in diamond lattice",
3156 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3157 Ion `Hot' Implantation",
3158 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3159 Hirao and Naoki Arai and Tomio Izumi",
3160 journal = "Japanese J. Appl. Phys.",
3162 number = "Part 1, No. 2A",
3166 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3167 doi = "10.1143/JJAP.31.343",
3168 publisher = "The Japan Society of Applied Physics",
3169 notes = "c-c bonds in c implanted si, hot implantation
3170 efficiency, c-c hard to break by thermal annealing",
3173 @Article{eichhorn99,
3174 author = "F. Eichhorn and N. Schell and W. Matz and R.
3177 title = "Strain and Si{C} particle formation in silicon
3178 implanted with carbon ions of medium fluence studied by
3179 synchrotron x-ray diffraction",
3182 journal = "J. Appl. Phys.",
3185 pages = "4184--4187",
3186 keywords = "silicon; carbon; elemental semiconductors; chemical
3187 interdiffusion; ion implantation; X-ray diffraction;
3188 precipitation; semiconductor doping",
3189 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3190 doi = "10.1063/1.371344",
3191 notes = "sic conversion by ibs, detected substitutional carbon,
3192 expansion of si lattice",
3195 @Article{eichhorn02,
3196 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3197 Metzger and W. Matz and R. K{\"{o}}gler",
3199 title = "Structural relation between Si and Si{C} formed by
3200 carbon ion implantation",
3203 journal = "J. Appl. Phys.",
3206 pages = "1287--1292",
3207 keywords = "silicon compounds; wide band gap semiconductors; ion
3208 implantation; annealing; X-ray scattering; transmission
3209 electron microscopy",
3210 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3211 doi = "10.1063/1.1428105",
3212 notes = "3c-sic alignement to si host in ibs depending on
3213 temperature, might explain c into c sub trafo",
3217 author = "G Lucas and M Bertolus and L Pizzagalli",
3218 title = "An environment-dependent interatomic potential for
3219 silicon carbide: calculation of bulk properties,
3220 high-pressure phases, point and extended defects, and
3221 amorphous structures",
3222 journal = "J. Phys.: Condens. Matter",
3226 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3232 author = "J Godet and L Pizzagalli and S Brochard and P
3234 title = "Comparison between classical potentials and ab initio
3235 methods for silicon under large shear",
3236 journal = "J. Phys.: Condens. Matter",
3240 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3242 notes = "comparison of empirical potentials, stillinger weber,
3243 edip, tersoff, ab initio",
3246 @Article{moriguchi98,
3247 title = "Verification of Tersoff's Potential for Static
3248 Structural Analysis of Solids of Group-{IV} Elements",
3249 author = "Koji Moriguchi and Akira Shintani",
3250 journal = "Japanese J. Appl. Phys.",
3252 number = "Part 1, No. 2",
3256 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3257 doi = "10.1143/JJAP.37.414",
3258 publisher = "The Japan Society of Applied Physics",
3259 notes = "tersoff stringent test",
3262 @Article{mazzarolo01,
3263 title = "Low-energy recoils in crystalline silicon: Quantum
3265 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3266 Lulli and Eros Albertazzi",
3267 journal = "Phys. Rev. B",
3274 doi = "10.1103/PhysRevB.63.195207",
3275 publisher = "American Physical Society",
3278 @Article{holmstroem08,
3279 title = "Threshold defect production in silicon determined by
3280 density functional theory molecular dynamics
3282 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3283 journal = "Phys. Rev. B",
3290 doi = "10.1103/PhysRevB.78.045202",
3291 publisher = "American Physical Society",
3292 notes = "threshold displacement comparison empirical and ab
3296 @Article{nordlund97,
3297 title = "Repulsive interatomic potentials calculated using
3298 Hartree-Fock and density-functional theory methods",
3299 journal = "Nucl. Instrum. Methods Phys. Res. B",
3306 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3307 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3308 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3309 notes = "repulsive ab initio potential",
3313 title = "Efficiency of ab-initio total energy calculations for
3314 metals and semiconductors using a plane-wave basis
3316 journal = "Comput. Mater. Sci.",
3323 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3324 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3325 author = "G. Kresse and J. Furthm{\"{u}}ller",
3330 title = "Projector augmented-wave method",
3331 author = "P. E. Bl{\"o}chl",
3332 journal = "Phys. Rev. B",
3335 pages = "17953--17979",
3339 doi = "10.1103/PhysRevB.50.17953",
3340 publisher = "American Physical Society",
3341 notes = "paw method",
3345 title = "Norm-Conserving Pseudopotentials",
3346 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3347 journal = "Phys. Rev. Lett.",
3350 pages = "1494--1497",
3354 doi = "10.1103/PhysRevLett.43.1494",
3355 publisher = "American Physical Society",
3356 notes = "norm-conserving pseudopotentials",
3359 @Article{vanderbilt90,
3360 title = "Soft self-consistent pseudopotentials in a generalized
3361 eigenvalue formalism",
3362 author = "David Vanderbilt",
3363 journal = "Phys. Rev. B",
3366 pages = "7892--7895",
3370 doi = "10.1103/PhysRevB.41.7892",
3371 publisher = "American Physical Society",
3372 notes = "vasp pseudopotentials",
3376 title = "Accurate and simple density functional for the
3377 electronic exchange energy: Generalized gradient
3379 author = "John P. Perdew and Yue Wang",
3380 journal = "Phys. Rev. B",
3383 pages = "8800--8802",
3387 doi = "10.1103/PhysRevB.33.8800",
3388 publisher = "American Physical Society",
3389 notes = "rapid communication gga",
3393 title = "Generalized gradient approximations for exchange and
3394 correlation: {A} look backward and forward",
3395 journal = "Physica B: Condensed Matter",
3402 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3403 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3404 author = "John P. Perdew",
3405 notes = "gga overview",
3409 title = "Atoms, molecules, solids, and surfaces: Applications
3410 of the generalized gradient approximation for exchange
3412 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3413 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3414 and Carlos Fiolhais",
3415 journal = "Phys. Rev. B",
3418 pages = "6671--6687",
3422 doi = "10.1103/PhysRevB.46.6671",
3423 publisher = "American Physical Society",
3424 notes = "gga pw91 (as in vasp)",
3427 @Article{baldereschi73,
3428 title = "Mean-Value Point in the Brillouin Zone",
3429 author = "A. Baldereschi",
3430 journal = "Phys. Rev. B",
3433 pages = "5212--5215",
3437 doi = "10.1103/PhysRevB.7.5212",
3438 publisher = "American Physical Society",
3439 notes = "mean value k point",
3443 title = "Ab initio pseudopotential calculations of dopant
3445 journal = "Comput. Mater. Sci.",
3452 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3453 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3454 author = "Jing Zhu",
3455 keywords = "TED (transient enhanced diffusion)",
3456 keywords = "Boron dopant",
3457 keywords = "Carbon dopant",
3458 keywords = "Defect",
3459 keywords = "ab initio pseudopotential method",
3460 keywords = "Impurity cluster",
3461 notes = "binding of c to si interstitial, c in si defects",
3465 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3467 title = "Si{C} buried layer formation by ion beam synthesis at
3471 journal = "Appl. Phys. Lett.",
3474 pages = "2646--2648",
3475 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3476 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3477 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3478 ELECTRON MICROSCOPY",
3479 URL = "http://link.aip.org/link/?APL/66/2646/1",
3480 doi = "10.1063/1.113112",
3481 notes = "precipitation mechanism by substitutional carbon, si
3482 self interstitials react with further implanted c",
3486 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3487 Kolodzey and A. Hairie",
3489 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3493 journal = "J. Appl. Phys.",
3496 pages = "4631--4633",
3497 keywords = "silicon compounds; precipitation; localised modes;
3498 semiconductor epitaxial layers; infrared spectra;
3499 Fourier transform spectra; thermal stability;
3501 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3502 doi = "10.1063/1.368703",
3503 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3507 author = "R Jones and B J Coomer and P R Briddon",
3508 title = "Quantum mechanical modelling of defects in
3510 journal = "J. Phys.: Condens. Matter",
3514 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3516 notes = "ab inito dft intro, vibrational modes, c defect in
3521 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3522 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3523 J. E. Greene and S. G. Bishop",
3525 title = "Carbon incorporation pathways and lattice sites in
3526 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3527 molecular-beam epitaxy",
3530 journal = "J. Appl. Phys.",
3533 pages = "5716--5727",
3534 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3535 doi = "10.1063/1.1465122",
3536 notes = "c substitutional incorporation pathway, dft and expt",
3540 title = "Dynamic properties of interstitial carbon and
3541 carbon-carbon pair defects in silicon",
3542 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3544 journal = "Phys. Rev. B",
3547 pages = "2188--2194",
3551 doi = "10.1103/PhysRevB.55.2188",
3552 publisher = "American Physical Society",
3553 notes = "ab initio c in si and di-carbon defect, no formation
3554 energies, different migration barriers and paths",
3558 title = "Interstitial carbon and the carbon-carbon pair in
3559 silicon: Semiempirical electronic-structure
3561 author = "Matthew J. Burnard and Gary G. DeLeo",
3562 journal = "Phys. Rev. B",
3565 pages = "10217--10225",
3569 doi = "10.1103/PhysRevB.47.10217",
3570 publisher = "American Physical Society",
3571 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3572 carbon defect, formation energies",
3576 title = "Electronic structure of interstitial carbon in
3578 author = "Morgan Besson and Gary G. DeLeo",
3579 journal = "Phys. Rev. B",
3582 pages = "4028--4033",
3586 doi = "10.1103/PhysRevB.43.4028",
3587 publisher = "American Physical Society",
3591 title = "Review of atomistic simulations of surface diffusion
3592 and growth on semiconductors",
3593 journal = "Comput. Mater. Sci.",
3598 note = "Proceedings of the Workshop on Virtual Molecular Beam
3601 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3602 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3603 author = "Efthimios Kaxiras",
3604 notes = "might contain c 100 db formation energy, overview md,
3605 tight binding, first principles",
3608 @Article{kaukonen98,
3609 title = "Effect of {N} and {B} doping on the growth of {CVD}
3611 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3613 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3614 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3616 journal = "Phys. Rev. B",
3619 pages = "9965--9970",
3623 doi = "10.1103/PhysRevB.57.9965",
3624 publisher = "American Physical Society",
3625 notes = "constrained conjugate gradient relaxation technique
3630 title = "Correlation between the antisite pair and the ${DI}$
3632 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3633 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3635 journal = "Phys. Rev. B",
3642 doi = "10.1103/PhysRevB.67.155203",
3643 publisher = "American Physical Society",
3647 title = "Production and recovery of defects in Si{C} after
3648 irradiation and deformation",
3649 journal = "J. Nucl. Mater.",
3652 pages = "1803--1808",
3656 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3657 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3658 author = "J. Chen and P. Jung and H. Klein",
3662 title = "Accumulation, dynamic annealing and thermal recovery
3663 of ion-beam-induced disorder in silicon carbide",
3664 journal = "Nucl. Instrum. Methods Phys. Res. B",
3671 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3672 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3673 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3676 @Article{bockstedte03,
3677 title = "Ab initio study of the migration of intrinsic defects
3679 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3681 journal = "Phys. Rev. B",
3688 doi = "10.1103/PhysRevB.68.205201",
3689 publisher = "American Physical Society",
3690 notes = "defect migration in sic",
3694 title = "Theoretical study of vacancy diffusion and
3695 vacancy-assisted clustering of antisites in Si{C}",
3696 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3698 journal = "Phys. Rev. B",
3705 doi = "10.1103/PhysRevB.68.155208",
3706 publisher = "American Physical Society",
3710 journal = "Telegrafiya i Telefoniya bez Provodov",
3714 author = "O. V. Lossev",
3718 title = "Luminous carborundum detector and detection effect and
3719 oscillations with crystals",
3720 journal = "Philosophical Magazine Series 7",
3723 pages = "1024--1044",
3725 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3726 author = "O. V. Lossev",
3730 journal = "Physik. Zeitschr.",
3734 author = "O. V. Lossev",
3738 journal = "Physik. Zeitschr.",
3742 author = "O. V. Lossev",
3746 journal = "Physik. Zeitschr.",
3750 author = "O. V. Lossev",
3754 title = "A note on carborundum",
3755 journal = "Electrical World",
3759 author = "H. J. Round",
3762 @Article{vashishath08,
3763 title = "Recent trends in silicon carbide device research",
3764 journal = "Mj. Int. J. Sci. Tech.",
3769 author = "Munish Vashishath and Ashoke K. Chatterjee",
3770 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3771 notes = "sic polytype electronic properties",
3775 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3777 title = "Growth and Properties of beta-Si{C} Single Crystals",
3780 journal = "Journal of Applied Physics",
3784 URL = "http://link.aip.org/link/?JAP/37/333/1",
3785 doi = "10.1063/1.1707837",
3786 notes = "sic melt growth",
3790 author = "A. E. van Arkel and J. H. de Boer",
3791 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3793 publisher = "WILEY-VCH Verlag GmbH",
3795 journal = "Z. Anorg. Chem.",
3798 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3799 doi = "10.1002/zaac.19251480133",
3800 notes = "van arkel apparatus",
3804 author = "K. Moers",
3806 journal = "Z. Anorg. Chem.",
3809 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3814 author = "J. T. Kendall",
3815 title = "Electronic Conduction in Silicon Carbide",
3818 journal = "The Journal of Chemical Physics",
3822 URL = "http://link.aip.org/link/?JCP/21/821/1",
3823 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3828 author = "J. A. Lely",
3830 journal = "Ber. Deut. Keram. Ges.",
3833 notes = "lely sublimation growth process",
3836 @Article{knippenberg63,
3837 author = "W. F. Knippenberg",
3839 journal = "Philips Res. Repts.",
3842 notes = "acheson process",
3845 @Article{hoffmann82,
3846 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3849 title = "Silicon carbide blue light emitting diodes with
3850 improved external quantum efficiency",
3853 journal = "Journal of Applied Physics",
3856 pages = "6962--6967",
3857 keywords = "light emitting diodes; silicon carbides; quantum
3858 efficiency; visible radiation; experimental data;
3859 epitaxy; fabrication; medium temperature; layers;
3860 aluminium; nitrogen; substrates; pn junctions;
3861 electroluminescence; spectra; current density;
3863 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3864 doi = "10.1063/1.330041",
3865 notes = "blue led, sublimation process",
3869 author = "Philip Neudeck",
3870 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3871 Road 44135 Cleveland OH",
3872 title = "Progress in silicon carbide semiconductor electronics
3874 journal = "Journal of Electronic Materials",
3875 publisher = "Springer Boston",
3877 keyword = "Chemistry and Materials Science",
3881 URL = "http://dx.doi.org/10.1007/BF02659688",
3882 note = "10.1007/BF02659688",
3884 notes = "sic data, advantages of 3c sic",
3887 @Article{bhatnagar93,
3888 author = "M. Bhatnagar and B. J. Baliga",
3889 journal = "Electron Devices, IEEE Transactions on",
3890 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3897 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3898 rectifiers;Si;SiC;breakdown voltages;drift region
3899 properties;output characteristics;power MOSFETs;power
3900 semiconductor devices;switching characteristics;thermal
3901 analysis;Schottky-barrier diodes;electric breakdown of
3902 solids;insulated gate field effect transistors;power
3903 transistors;semiconductor materials;silicon;silicon
3904 compounds;solid-state rectifiers;thermal analysis;",
3905 doi = "10.1109/16.199372",
3907 notes = "comparison 3c 6h sic and si devices",
3911 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3912 A. Powell and C. S. Salupo and L. G. Matus",
3913 journal = "Electron Devices, IEEE Transactions on",
3914 title = "Electrical properties of epitaxial 3{C}- and
3915 6{H}-Si{C} p-n junction diodes produced side-by-side on
3916 6{H}-Si{C} substrates",
3922 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3923 C;6H-SiC layers;6H-SiC substrates;CVD
3924 process;SiC;chemical vapor deposition;doping;electrical
3925 properties;epitaxial layers;light
3926 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3927 diodes;polytype;rectification characteristics;reverse
3928 leakage current;reverse voltages;temperature;leakage
3929 currents;power electronics;semiconductor
3930 diodes;semiconductor epitaxial layers;semiconductor
3931 growth;semiconductor materials;silicon
3932 compounds;solid-state rectifiers;substrates;vapour
3933 phase epitaxial growth;",
3934 doi = "10.1109/16.285038",
3936 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3941 author = "N. Schulze and D. L. Barrett and G. Pensl",
3943 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3944 single crystals by physical vapor transport",
3947 journal = "Applied Physics Letters",
3950 pages = "1632--1634",
3951 keywords = "silicon compounds; semiconductor materials;
3952 semiconductor growth; crystal growth from vapour;
3953 photoluminescence; Hall mobility",
3954 URL = "http://link.aip.org/link/?APL/72/1632/1",
3955 doi = "10.1063/1.121136",
3956 notes = "micropipe free 6h-sic pvt growth",
3960 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3962 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3965 journal = "Applied Physics Letters",
3969 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3970 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3971 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3972 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3974 URL = "http://link.aip.org/link/?APL/50/221/1",
3975 doi = "10.1063/1.97667",
3976 notes = "apb 3c-sic heteroepitaxy on si",
3979 @Article{shibahara86,
3980 title = "Surface morphology of cubic Si{C}(100) grown on
3981 Si(100) by chemical vapor deposition",
3982 journal = "Journal of Crystal Growth",
3989 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3990 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3991 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3993 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3996 @Article{desjardins96,
3997 author = "P. Desjardins and J. E. Greene",
3999 title = "Step-flow epitaxial growth on two-domain surfaces",
4002 journal = "Journal of Applied Physics",
4005 pages = "1423--1434",
4006 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4007 FILM GROWTH; SURFACE STRUCTURE",
4008 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4009 doi = "10.1063/1.360980",
4010 notes = "apb model",
4014 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4016 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4017 carbonization of silicon",
4020 journal = "Journal of Applied Physics",
4023 pages = "2070--2073",
4024 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4025 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4027 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4028 doi = "10.1063/1.360184",
4029 notes = "ssmbe of sic on si, lower temperatures",
4033 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4034 {MBE} using surface superstructure",
4035 journal = "Journal of Crystal Growth",
4042 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4043 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4044 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4045 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4046 notes = "gas source mbe of 3c-sic on 6h-sic",
4049 @Article{yoshinobu92,
4050 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4051 and Takashi Fuyuki and Hiroyuki Matsunami",
4053 title = "Lattice-matched epitaxial growth of single crystalline
4054 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4055 molecular beam epitaxy",
4058 journal = "Applied Physics Letters",
4062 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4063 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4064 INTERFACE STRUCTURE",
4065 URL = "http://link.aip.org/link/?APL/60/824/1",
4066 doi = "10.1063/1.107430",
4067 notes = "gas source mbe of 3c-sic on 6h-sic",
4070 @Article{yoshinobu90,
4071 title = "Atomic level control in gas source {MBE} growth of
4073 journal = "Journal of Crystal Growth",
4080 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4081 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4082 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4083 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4084 notes = "gas source mbe of 3c-sic on 3c-sic",
4088 title = "Atomic layer epitaxy controlled by surface
4089 superstructures in Si{C}",
4090 journal = "Thin Solid Films",
4097 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4098 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4099 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4101 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4106 title = "Microscopic mechanisms of accurate layer-by-layer
4107 growth of [beta]-Si{C}",
4108 journal = "Thin Solid Films",
4115 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4116 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4117 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4118 and S. Misawa and E. Sakuma and S. Yoshida",
4119 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4124 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4126 title = "Effects of gas flow ratio on silicon carbide thin film
4127 growth mode and polytype formation during gas-source
4128 molecular beam epitaxy",
4131 journal = "Applied Physics Letters",
4134 pages = "2851--2853",
4135 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4136 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4137 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4139 URL = "http://link.aip.org/link/?APL/65/2851/1",
4140 doi = "10.1063/1.112513",
4141 notes = "gas source mbe of 6h-sic on 6h-sic",
4145 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4146 title = "Heterointerface Control and Epitaxial Growth of
4147 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4148 publisher = "WILEY-VCH Verlag",
4150 journal = "physica status solidi (b)",
4153 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4158 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4159 journal = "Journal of Crystal Growth",
4166 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4167 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4168 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4169 keywords = "Reflection high-energy electron diffraction (RHEED)",
4170 keywords = "Scanning electron microscopy (SEM)",
4171 keywords = "Silicon carbide",
4172 keywords = "Silicon",
4173 keywords = "Island growth",
4174 notes = "lower temperature, 550-700",
4177 @Article{hatayama95,
4178 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4179 on Si using hydrocarbon radicals by gas source
4180 molecular beam epitaxy",
4181 journal = "Journal of Crystal Growth",
4188 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4189 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4190 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4191 and Hiroyuki Matsunami",
4195 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4196 title = "The Preference of Silicon Carbide for Growth in the
4197 Metastable Cubic Form",
4198 journal = "Journal of the American Ceramic Society",
4201 publisher = "Blackwell Publishing Ltd",
4203 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4204 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4205 pages = "2630--2633",
4206 keywords = "silicon carbide, crystal growth, crystal structure,
4207 calculations, stability",
4209 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4210 polytype dft calculation refs",
4213 @Article{allendorf91,
4214 title = "The adsorption of {H}-atoms on polycrystalline
4215 [beta]-silicon carbide",
4216 journal = "Surface Science",
4223 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4224 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4225 author = "Mark D. Allendorf and Duane A. Outka",
4226 notes = "h adsorption on 3c-sic",
4229 @Article{eaglesham93,
4230 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4231 D. P. Adams and S. M. Yalisove",
4233 title = "Effect of {H} on Si molecular-beam epitaxy",
4236 journal = "Journal of Applied Physics",
4239 pages = "6615--6618",
4240 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4241 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4242 DIFFUSION; ADSORPTION",
4243 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4244 doi = "10.1063/1.355101",
4245 notes = "h incorporation on si surface, lower surface
4250 author = "Ronald C. Newman",
4251 title = "Carbon in Crystalline Silicon",
4252 journal = "MRS Online Proceedings Library",
4257 doi = "10.1557/PROC-59-403",
4258 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4259 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4263 title = "The diffusivity of carbon in silicon",
4264 journal = "Journal of Physics and Chemistry of Solids",
4271 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4272 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4273 author = "R. C. Newman and J. Wakefield",
4274 notes = "diffusivity of substitutional c in si",
4278 author = "U. Gösele",
4279 title = "The Role of Carbon and Point Defects in Silicon",
4280 journal = "MRS Online Proceedings Library",
4285 doi = "10.1557/PROC-59-419",
4286 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4287 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4291 title = "Convergence of supercell calculations for point
4292 defects in semiconductors: Vacancy in silicon",
4293 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4295 journal = "Phys. Rev. B",
4298 pages = "1318--1325",
4302 doi = "10.1103/PhysRevB.58.1318",
4303 publisher = "American Physical Society",
4304 notes = "convergence k point supercell size, vacancy in
4309 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4310 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4311 K{\"{o}}gler and W. Skorupa",
4313 title = "Spectroscopic characterization of phases formed by
4314 high-dose carbon ion implantation in silicon",
4317 journal = "Journal of Applied Physics",
4320 pages = "2978--2984",
4321 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4322 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4323 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4324 DEPENDENCE; PRECIPITATES; ANNEALING",
4325 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4326 doi = "10.1063/1.358714",