2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1080 doi = "10.1063/1.358826",
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1159 Silicon Materials Research for Electronic and
1160 Photovoltaic Applications",
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1276 journal = "Mater. Sci. Eng., C",
1281 note = "Current Trends in Nanoscience - from Materials to
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1293 application in buffer layer for Ga{N} epitaxial
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1304 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
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1309 @Article{yamamoto04,
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1312 implantation into Si(1 1 1) substrate",
1313 journal = "Journal of Crystal Growth",
1318 note = "Proceedings of the 11th Biennial (US) Workshop on
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1329 title = "Substrates for gallium nitride epitaxy",
1330 journal = "Materials Science and Engineering: R: Reports",
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1355 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
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1357 notes = "gan on 3c-sic (first time?)",
1361 author = "B. J. Alder and T. E. Wainwright",
1362 title = "Phase Transition for a Hard Sphere System",
1365 journal = "J. Chem. Phys.",
1368 pages = "1208--1209",
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1370 doi = "10.1063/1.1743957",
1374 author = "B. J. Alder and T. E. Wainwright",
1375 title = "Studies in Molecular Dynamics. {I}. General Method",
1378 journal = "J. Chem. Phys.",
1382 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. Lett.",
1397 doi = "10.1103/PhysRevLett.56.632",
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1432 title = "Empirical Interatomic Potential for Carbon, with
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1435 journal = "Phys. Rev. Lett.",
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1450 journal = "Phys. Rev. B",
1453 pages = "5566--5568",
1457 doi = "10.1103/PhysRevB.39.5566",
1458 publisher = "American Physical Society",
1462 title = "Carbon defects and defect reactions in silicon",
1463 author = "J. Tersoff",
1464 journal = "Phys. Rev. Lett.",
1467 pages = "1757--1760",
1471 doi = "10.1103/PhysRevLett.64.1757",
1472 publisher = "American Physical Society",
1476 title = "Point defects and dopant diffusion in silicon",
1477 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1478 journal = "Rev. Mod. Phys.",
1485 doi = "10.1103/RevModPhys.61.289",
1486 publisher = "American Physical Society",
1490 title = "Silicon carbide: synthesis and processing",
1491 journal = "Nucl. Instrum. Methods Phys. Res. B",
1496 note = "Radiation Effects in Insulators",
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1506 journal = "Proceedings of the IEEE",
1507 title = "Thin film deposition and microelectronic and
1508 optoelectronic device fabrication and characterization
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1518 device fabrication;solid-state devices;surface
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1525 doi = "10.1109/5.90132",
1527 notes = "sic growth methods",
1531 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1532 Lin and B. Sverdlov and M. Burns",
1534 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1535 ZnSe-based semiconductor device technologies",
1538 journal = "J. Appl. Phys.",
1541 pages = "1363--1398",
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1548 notes = "sic intro, properties",
1552 author = "Noch Unbekannt",
1553 title = "How to find references",
1554 journal = "Journal of Applied References",
1561 title = "Atomistic simulation of thermomechanical properties of
1563 author = "Meijie Tang and Sidney Yip",
1564 journal = "Phys. Rev. B",
1567 pages = "15150--15159",
1570 doi = "10.1103/PhysRevB.52.15150",
1571 notes = "modified tersoff, scale cutoff with volume, promising
1572 tersoff reparametrization",
1573 publisher = "American Physical Society",
1577 title = "Silicon carbide as a new {MEMS} technology",
1578 journal = "Sensors and Actuators A: Physical",
1584 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1585 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1586 author = "Pasqualina M. Sarro",
1588 keywords = "Silicon carbide",
1589 keywords = "Micromachining",
1590 keywords = "Mechanical stress",
1594 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1595 semiconductor for high-temperature applications: {A}
1597 journal = "Solid-State Electronics",
1600 pages = "1409--1422",
1603 doi = "DOI: 10.1016/0038-1101(96)00045-7",
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1605 author = "J. B. Casady and R. W. Johnson",
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1609 @Article{giancarli98,
1610 title = "Design requirements for Si{C}/Si{C} composites
1611 structural material in fusion power reactor blankets",
1612 journal = "Fusion Engineering and Design",
1618 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1620 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1621 Marois and N. B. Morley and J. F. Salavy",
1625 title = "Electrical and optical characterization of Si{C}",
1626 journal = "Physica B: Condensed Matter",
1632 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1633 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1634 author = "G. Pensl and W. J. Choyke",
1638 title = "Investigation of growth processes of ingots of silicon
1639 carbide single crystals",
1640 journal = "J. Cryst. Growth",
1645 notes = "modified lely process",
1647 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1648 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1649 author = "Yu. M. Tairov and V. F. Tsvetkov",
1653 title = "General principles of growing large-size single
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1655 journal = "Journal of Crystal Growth",
1662 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1663 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1664 author = "Yu.M. Tairov and V. F. Tsvetkov",
1668 title = "Si{C} boule growth by sublimation vapor transport",
1669 journal = "Journal of Crystal Growth",
1676 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1677 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1678 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1679 R. H. Hopkins and W. J. Choyke",
1683 title = "Growth of large Si{C} single crystals",
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1691 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
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1694 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1699 title = "Control of polytype formation by surface energy
1700 effects during the growth of Si{C} monocrystals by the
1701 sublimation method",
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1709 doi = "DOI: 10.1016/0022-0248(93)90397-F",
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1716 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1719 title = "Production of large-area single-crystal wafers of
1720 cubic Si{C} for semiconductor devices",
1723 journal = "Appl. Phys. Lett.",
1727 keywords = "silicon carbides; layers; chemical vapor deposition;
1729 URL = "http://link.aip.org/link/?APL/42/460/1",
1730 doi = "10.1063/1.93970",
1731 notes = "cvd of 3c-sic on si, sic buffer layer",
1735 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1736 and Hiroyuki Matsunami",
1738 title = "Epitaxial growth and electric characteristics of cubic
1742 journal = "J. Appl. Phys.",
1745 pages = "4889--4893",
1746 URL = "http://link.aip.org/link/?JAP/61/4889/1",
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1748 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1753 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1755 title = "Growth and Characterization of Cubic Si{C}
1756 Single-Crystal Films on Si",
1759 journal = "Journal of The Electrochemical Society",
1762 pages = "1558--1565",
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1774 title = "Improved beta-Si{C} heteroepitaxial films using
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1788 doi = "10.1063/1.98824",
1789 notes = "improved sic on off-axis si substrates, reduced apbs",
1793 title = "Crystal growth of Si{C} by step-controlled epitaxy",
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1802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1803 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
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1809 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1811 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
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1822 URL = "http://link.aip.org/link/?JAP/73/726/1",
1823 doi = "10.1063/1.353329",
1824 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
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1829 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1830 Yoganathan and J. Yang and P. Pirouz",
1832 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
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1836 journal = "Applied Physics Letters",
1839 pages = "1442--1444",
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1850 author = "H. S. Kong and J. T. Glass and R. F. Davis",
1852 title = "Chemical vapor deposition and characterization of
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1872 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1873 Yoganathan and J. Yang and P. Pirouz",
1875 title = "Growth of improved quality 3{C}-Si{C} films on
1876 6{H}-Si{C} substrates",
1879 journal = "Appl. Phys. Lett.",
1882 pages = "1353--1355",
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1894 Rozgonyi and K. L. More",
1896 title = "An examination of double positioning boundaries and
1897 interface misfit in beta-Si{C} films on alpha-Si{C}
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1906 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1907 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1908 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1909 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1910 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1911 doi = "10.1063/1.341004",
1915 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1916 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1917 and W. J. Choyke and L. Clemen and M. Yoganathan",
1919 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1920 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1923 journal = "Applied Physics Letters",
1927 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1928 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1929 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1930 URL = "http://link.aip.org/link/?APL/59/333/1",
1931 doi = "10.1063/1.105587",
1935 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1936 Thokala and M. J. Loboda",
1938 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1939 films on 6{H}-Si{C} by chemical vapor deposition from
1943 journal = "J. Appl. Phys.",
1946 pages = "1271--1273",
1947 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1948 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1950 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1951 doi = "10.1063/1.360368",
1952 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1956 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
1957 properties of its p-n junction",
1958 journal = "Journal of Crystal Growth",
1965 doi = "DOI: 10.1016/0022-0248(87)90449-0",
1966 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
1967 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
1969 notes = "first time ssmbe of 3c-sic on 6h-sic",
1973 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1974 [alpha]-Si{C}(0001) at low temperatures by solid-source
1975 molecular beam epitaxy",
1976 journal = "J. Cryst. Growth",
1982 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1983 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1984 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1985 Schr{\"{o}}ter and W. Richter",
1986 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1989 @Article{fissel95_apl,
1990 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1992 title = "Low-temperature growth of Si{C} thin films on Si and
1993 6{H}--Si{C} by solid-source molecular beam epitaxy",
1996 journal = "Appl. Phys. Lett.",
1999 pages = "3182--3184",
2000 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2002 URL = "http://link.aip.org/link/?APL/66/3182/1",
2003 doi = "10.1063/1.113716",
2004 notes = "mbe 3c-sic on si and 6h-sic",
2008 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2009 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2011 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2012 migration enhanced epitaxy controlled to an atomic
2013 level using surface superstructures",
2016 journal = "Applied Physics Letters",
2019 pages = "1204--1206",
2020 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2021 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2023 URL = "http://link.aip.org/link/?APL/68/1204/1",
2024 doi = "10.1063/1.115969",
2025 notes = "ss mbe sic, superstructure, reconstruction",
2029 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2030 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2031 C. M. Bertoni and A. Catellani",
2032 journal = "Phys. Rev. Lett.",
2039 doi = "10.1103/PhysRevLett.91.136101",
2040 publisher = "American Physical Society",
2041 notes = "dft calculations mbe sic growth",
2045 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2047 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2051 journal = "Appl. Phys. Lett.",
2055 URL = "http://link.aip.org/link/?APL/18/509/1",
2056 doi = "10.1063/1.1653516",
2057 notes = "first time sic by ibs, follow cites for precipitation
2062 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2063 and E. V. Lubopytova",
2064 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2065 by ion implantation",
2066 publisher = "Taylor \& Francis",
2068 journal = "Radiation Effects",
2072 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2073 notes = "3c-sic for different temperatures, amorphous, poly,
2074 single crystalline",
2077 @Article{akimchenko80,
2078 author = "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2079 title = "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions",
2080 publisher = "Taylor \& Francis",
2082 journal = "Radiation Effects",
2086 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2087 notes = "3c-sic nucleation by thermal spikes",
2091 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2092 and M. Olivier and A. M. Papon and G. Rolland",
2094 title = "High-temperature ion beam synthesis of cubic Si{C}",
2097 journal = "Journal of Applied Physics",
2100 pages = "2908--2912",
2101 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2102 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2103 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2104 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2105 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2106 REACTIONS; MONOCRYSTALS",
2107 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2108 doi = "10.1063/1.346092",
2109 notes = "triple energy implantation to overcome high annealing
2114 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2115 J. Davis and G. E. Celler",
2117 title = "Formation of buried layers of beta-Si{C} using ion
2118 beam synthesis and incoherent lamp annealing",
2121 journal = "Appl. Phys. Lett.",
2124 pages = "2242--2244",
2125 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2126 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2127 URL = "http://link.aip.org/link/?APL/51/2242/1",
2128 doi = "10.1063/1.98953",
2129 notes = "nice tem images, sic by ibs",
2133 author = "R. I. Scace and G. A. Slack",
2135 title = "Solubility of Carbon in Silicon and Germanium",
2138 journal = "J. Chem. Phys.",
2141 pages = "1551--1555",
2142 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2143 doi = "10.1063/1.1730236",
2144 notes = "solubility of c in c-si, si-c phase diagram",
2148 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2149 F. W. Saris and W. Vandervorst",
2151 title = "Role of {C} and {B} clusters in transient diffusion of
2155 journal = "Appl. Phys. Lett.",
2158 pages = "1150--1152",
2159 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2160 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2162 URL = "http://link.aip.org/link/?APL/68/1150/1",
2163 doi = "10.1063/1.115706",
2164 notes = "suppression of transient enhanced diffusion (ted)",
2168 title = "Implantation and transient boron diffusion: the role
2169 of the silicon self-interstitial",
2170 journal = "Nucl. Instrum. Methods Phys. Res. B",
2175 note = "Selected Papers of the Tenth International Conference
2176 on Ion Implantation Technology (IIT '94)",
2178 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2179 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2180 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2185 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2186 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2187 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2190 title = "Physical mechanisms of transient enhanced dopant
2191 diffusion in ion-implanted silicon",
2194 journal = "J. Appl. Phys.",
2197 pages = "6031--6050",
2198 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2199 doi = "10.1063/1.364452",
2200 notes = "ted, transient enhanced diffusion, c silicon trap",
2204 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2206 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2207 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2210 journal = "Appl. Phys. Lett.",
2214 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2215 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2216 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2218 URL = "http://link.aip.org/link/?APL/64/324/1",
2219 doi = "10.1063/1.111195",
2220 notes = "beta sic nano crystals in si, mbe, annealing",
2224 author = "Richard A. Soref",
2226 title = "Optical band gap of the ternary semiconductor Si[sub 1
2227 - x - y]Ge[sub x]{C}[sub y]",
2230 journal = "J. Appl. Phys.",
2233 pages = "2470--2472",
2234 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2235 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2237 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2238 doi = "10.1063/1.349403",
2239 notes = "band gap of strained si by c",
2243 author = "E Kasper",
2244 title = "Superlattices of group {IV} elements, a new
2245 possibility to produce direct band gap material",
2246 journal = "Physica Scripta",
2249 URL = "http://stacks.iop.org/1402-4896/T35/232",
2251 notes = "superlattices, convert indirect band gap into a
2256 author = "H. J. Osten and J. Griesche and S. Scalese",
2258 title = "Substitutional carbon incorporation in epitaxial
2259 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2260 molecular beam epitaxy",
2263 journal = "Appl. Phys. Lett.",
2267 keywords = "molecular beam epitaxial growth; semiconductor growth;
2268 wide band gap semiconductors; interstitials; silicon
2270 URL = "http://link.aip.org/link/?APL/74/836/1",
2271 doi = "10.1063/1.123384",
2272 notes = "substitutional c in si",
2275 @Article{hohenberg64,
2276 title = "Inhomogeneous Electron Gas",
2277 author = "P. Hohenberg and W. Kohn",
2278 journal = "Phys. Rev.",
2281 pages = "B864--B871",
2285 doi = "10.1103/PhysRev.136.B864",
2286 publisher = "American Physical Society",
2287 notes = "density functional theory, dft",
2291 title = "Self-Consistent Equations Including Exchange and
2292 Correlation Effects",
2293 author = "W. Kohn and L. J. Sham",
2294 journal = "Phys. Rev.",
2297 pages = "A1133--A1138",
2301 doi = "10.1103/PhysRev.140.A1133",
2302 publisher = "American Physical Society",
2303 notes = "dft, exchange and correlation",
2307 title = "Strain-stabilized highly concentrated pseudomorphic
2308 $Si1-x$$Cx$ layers in Si",
2309 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2311 journal = "Phys. Rev. Lett.",
2314 pages = "3578--3581",
2318 doi = "10.1103/PhysRevLett.72.3578",
2319 publisher = "American Physical Society",
2320 notes = "high c concentration in si, heterostructure, strained
2325 title = "Electron Transport Model for Strained Silicon-Carbon
2327 author = "Shu-Tong Chang and Chung-Yi Lin",
2328 journal = "Japanese J. Appl. Phys.",
2331 pages = "2257--2262",
2334 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2335 doi = "10.1143/JJAP.44.2257",
2336 publisher = "The Japan Society of Applied Physics",
2337 notes = "enhance of electron mobility in starined si",
2341 author = "H. J. Osten and P. Gaworzewski",
2343 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2344 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2348 journal = "J. Appl. Phys.",
2351 pages = "4977--4981",
2352 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2353 semiconductors; semiconductor epitaxial layers; carrier
2354 density; Hall mobility; interstitials; defect states",
2355 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2356 doi = "10.1063/1.366364",
2357 notes = "charge transport in strained si",
2361 title = "Carbon-mediated aggregation of self-interstitials in
2362 silicon: {A} large-scale molecular dynamics study",
2363 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2364 journal = "Phys. Rev. B",
2371 doi = "10.1103/PhysRevB.69.155214",
2372 publisher = "American Physical Society",
2373 notes = "simulation using promising tersoff reparametrization",
2377 title = "Event-Based Relaxation of Continuous Disordered
2379 author = "G. T. Barkema and Normand Mousseau",
2380 journal = "Phys. Rev. Lett.",
2383 pages = "4358--4361",
2387 doi = "10.1103/PhysRevLett.77.4358",
2388 publisher = "American Physical Society",
2389 notes = "activation relaxation technique, art, speed up slow
2394 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2395 Minoukadeh and F. Willaime",
2397 title = "Some improvements of the activation-relaxation
2398 technique method for finding transition pathways on
2399 potential energy surfaces",
2402 journal = "J. Chem. Phys.",
2408 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2409 surfaces; vacancies (crystal)",
2410 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2411 doi = "10.1063/1.3088532",
2412 notes = "improvements to art, refs for methods to find
2413 transition pathways",
2416 @Article{parrinello81,
2417 author = "M. Parrinello and A. Rahman",
2419 title = "Polymorphic transitions in single crystals: {A} new
2420 molecular dynamics method",
2423 journal = "J. Appl. Phys.",
2426 pages = "7182--7190",
2427 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2428 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2429 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2430 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2431 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2433 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2434 doi = "10.1063/1.328693",
2437 @Article{stillinger85,
2438 title = "Computer simulation of local order in condensed phases
2440 author = "Frank H. Stillinger and Thomas A. Weber",
2441 journal = "Phys. Rev. B",
2444 pages = "5262--5271",
2448 doi = "10.1103/PhysRevB.31.5262",
2449 publisher = "American Physical Society",
2453 title = "Empirical potential for hydrocarbons for use in
2454 simulating the chemical vapor deposition of diamond
2456 author = "Donald W. Brenner",
2457 journal = "Phys. Rev. B",
2460 pages = "9458--9471",
2464 doi = "10.1103/PhysRevB.42.9458",
2465 publisher = "American Physical Society",
2466 notes = "brenner hydro carbons",
2470 title = "Modeling of Covalent Bonding in Solids by Inversion of
2471 Cohesive Energy Curves",
2472 author = "Martin Z. Bazant and Efthimios Kaxiras",
2473 journal = "Phys. Rev. Lett.",
2476 pages = "4370--4373",
2480 doi = "10.1103/PhysRevLett.77.4370",
2481 publisher = "American Physical Society",
2482 notes = "first si edip",
2486 title = "Environment-dependent interatomic potential for bulk
2488 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2490 journal = "Phys. Rev. B",
2493 pages = "8542--8552",
2497 doi = "10.1103/PhysRevB.56.8542",
2498 publisher = "American Physical Society",
2499 notes = "second si edip",
2503 title = "Interatomic potential for silicon defects and
2505 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2506 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2507 journal = "Phys. Rev. B",
2510 pages = "2539--2550",
2514 doi = "10.1103/PhysRevB.58.2539",
2515 publisher = "American Physical Society",
2516 notes = "latest si edip, good dislocation explanation",
2520 title = "{PARCAS} molecular dynamics code",
2521 author = "K. Nordlund",
2526 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2528 author = "Arthur F. Voter",
2529 journal = "Phys. Rev. Lett.",
2532 pages = "3908--3911",
2536 doi = "10.1103/PhysRevLett.78.3908",
2537 publisher = "American Physical Society",
2538 notes = "hyperdynamics, accelerated md",
2542 author = "Arthur F. Voter",
2544 title = "A method for accelerating the molecular dynamics
2545 simulation of infrequent events",
2548 journal = "J. Chem. Phys.",
2551 pages = "4665--4677",
2552 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2553 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2554 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2555 energy functions; surface diffusion; reaction kinetics
2556 theory; potential energy surfaces",
2557 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2558 doi = "10.1063/1.473503",
2559 notes = "improved hyperdynamics md",
2562 @Article{sorensen2000,
2563 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2565 title = "Temperature-accelerated dynamics for simulation of
2569 journal = "J. Chem. Phys.",
2572 pages = "9599--9606",
2573 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2574 MOLECULAR DYNAMICS METHOD; surface diffusion",
2575 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2576 doi = "10.1063/1.481576",
2577 notes = "temperature accelerated dynamics, tad",
2581 title = "Parallel replica method for dynamics of infrequent
2583 author = "Arthur F. Voter",
2584 journal = "Phys. Rev. B",
2587 pages = "R13985--R13988",
2591 doi = "10.1103/PhysRevB.57.R13985",
2592 publisher = "American Physical Society",
2593 notes = "parallel replica method, accelerated md",
2597 author = "Xiongwu Wu and Shaomeng Wang",
2599 title = "Enhancing systematic motion in molecular dynamics
2603 journal = "J. Chem. Phys.",
2606 pages = "9401--9410",
2607 keywords = "molecular dynamics method; argon; Lennard-Jones
2608 potential; crystallisation; liquid theory",
2609 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2610 doi = "10.1063/1.478948",
2611 notes = "self guided md, sgmd, accelerated md, enhancing
2615 @Article{choudhary05,
2616 author = "Devashish Choudhary and Paulette Clancy",
2618 title = "Application of accelerated molecular dynamics schemes
2619 to the production of amorphous silicon",
2622 journal = "J. Chem. Phys.",
2628 keywords = "molecular dynamics method; silicon; glass structure;
2629 amorphous semiconductors",
2630 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2631 doi = "10.1063/1.1878733",
2632 notes = "explanation of sgmd and hyper md, applied to amorphous
2637 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2639 title = "Carbon precipitation in silicon: Why is it so
2643 journal = "Appl. Phys. Lett.",
2646 pages = "3336--3338",
2647 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2648 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2650 URL = "http://link.aip.org/link/?APL/62/3336/1",
2651 doi = "10.1063/1.109063",
2652 notes = "interfacial energy of cubic sic and si, si self
2653 interstitials necessary for precipitation, volume
2654 decrease, high interface energy",
2657 @Article{chaussende08,
2658 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2659 journal = "J. Cryst. Growth",
2664 note = "Proceedings of the E-MRS Conference, Symposium G -
2665 Substrates of Wide Bandgap Materials",
2667 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2668 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2669 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2670 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2671 and A. Andreadou and E. K. Polychroniadis and C.
2672 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2673 notes = "3c-sic crystal growth, sic fabrication + links,
2677 @Article{chaussende07,
2678 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2679 title = "Status of Si{C} bulk growth processes",
2680 journal = "Journal of Physics D: Applied Physics",
2684 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2686 notes = "review of sic single crystal growth methods, process
2691 title = "Forces in Molecules",
2692 author = "R. P. Feynman",
2693 journal = "Phys. Rev.",
2700 doi = "10.1103/PhysRev.56.340",
2701 publisher = "American Physical Society",
2702 notes = "hellmann feynman forces",
2706 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2707 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2708 their Contrasting Properties",
2709 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2711 journal = "Phys. Rev. Lett.",
2718 doi = "10.1103/PhysRevLett.84.943",
2719 publisher = "American Physical Society",
2720 notes = "si sio2 and sic sio2 interface",
2723 @Article{djurabekova08,
2724 title = "Atomistic simulation of the interface structure of Si
2725 nanocrystals embedded in amorphous silica",
2726 author = "Flyura Djurabekova and Kai Nordlund",
2727 journal = "Phys. Rev. B",
2734 doi = "10.1103/PhysRevB.77.115325",
2735 publisher = "American Physical Society",
2736 notes = "nc-si in sio2, interface energy, nc construction,
2737 angular distribution, coordination",
2741 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2742 W. Liang and J. Zou",
2744 title = "Nature of interfacial defects and their roles in
2745 strain relaxation at highly lattice mismatched
2746 3{C}-Si{C}/Si (001) interface",
2749 journal = "J. Appl. Phys.",
2755 keywords = "anelastic relaxation; crystal structure; dislocations;
2756 elemental semiconductors; semiconductor growth;
2757 semiconductor thin films; silicon; silicon compounds;
2758 stacking faults; wide band gap semiconductors",
2759 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2760 doi = "10.1063/1.3234380",
2761 notes = "sic/si interface, follow refs, tem image
2762 deconvolution, dislocation defects",
2765 @Article{kitabatake93,
2766 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2769 title = "Simulations and experiments of Si{C} heteroepitaxial
2770 growth on Si(001) surface",
2773 journal = "J. Appl. Phys.",
2776 pages = "4438--4445",
2777 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2778 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2779 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2780 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2781 doi = "10.1063/1.354385",
2782 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2786 @Article{kitabatake97,
2787 author = "Makoto Kitabatake",
2788 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2789 Heteroepitaxial Growth",
2790 publisher = "WILEY-VCH Verlag",
2792 journal = "physica status solidi (b)",
2795 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2796 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2797 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2801 title = "Strain relaxation and thermal stability of the
2802 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2804 journal = "Thin Solid Films",
2811 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2812 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2813 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2814 keywords = "Strain relaxation",
2815 keywords = "Interfaces",
2816 keywords = "Thermal stability",
2817 keywords = "Molecular dynamics",
2818 notes = "tersoff sic/si interface study",
2822 title = "Ab initio Study of Misfit Dislocations at the
2823 $Si{C}/Si(001)$ Interface",
2824 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2826 journal = "Phys. Rev. Lett.",
2833 doi = "10.1103/PhysRevLett.89.156101",
2834 publisher = "American Physical Society",
2835 notes = "sic/si interface study",
2838 @Article{pizzagalli03,
2839 title = "Theoretical investigations of a highly mismatched
2840 interface: Si{C}/Si(001)",
2841 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2843 journal = "Phys. Rev. B",
2850 doi = "10.1103/PhysRevB.68.195302",
2851 publisher = "American Physical Society",
2852 notes = "tersoff md and ab initio sic/si interface study",
2856 title = "Atomic configurations of dislocation core and twin
2857 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2858 electron microscopy",
2859 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2860 H. Zheng and J. W. Liang",
2861 journal = "Phys. Rev. B",
2868 doi = "10.1103/PhysRevB.75.184103",
2869 publisher = "American Physical Society",
2870 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2874 @Article{hornstra58,
2875 title = "Dislocations in the diamond lattice",
2876 journal = "Journal of Physics and Chemistry of Solids",
2883 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2884 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2885 author = "J. Hornstra",
2886 notes = "dislocations in diamond lattice",
2890 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2891 Ion `Hot' Implantation",
2892 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2893 Hirao and Naoki Arai and Tomio Izumi",
2894 journal = "Japanese Journal of Applied Physics",
2896 number = "Part 1, No. 2A",
2900 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2901 doi = "10.1143/JJAP.31.343",
2902 publisher = "The Japan Society of Applied Physics",
2903 notes = "c-c bonds in c implanted si, hot implantation
2904 efficiency, c-c hard to break by thermal annealing",
2907 @Article{eichhorn99,
2908 author = "F. Eichhorn and N. Schell and W. Matz and R.
2911 title = "Strain and Si{C} particle formation in silicon
2912 implanted with carbon ions of medium fluence studied by
2913 synchrotron x-ray diffraction",
2916 journal = "J. Appl. Phys.",
2919 pages = "4184--4187",
2920 keywords = "silicon; carbon; elemental semiconductors; chemical
2921 interdiffusion; ion implantation; X-ray diffraction;
2922 precipitation; semiconductor doping",
2923 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2924 doi = "10.1063/1.371344",
2925 notes = "sic conversion by ibs, detected substitutional carbon,
2926 expansion of si lattice",
2929 @Article{eichhorn02,
2930 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2931 Metzger and W. Matz and R. K{\"{o}}gler",
2933 title = "Structural relation between Si and Si{C} formed by
2934 carbon ion implantation",
2937 journal = "J. Appl. Phys.",
2940 pages = "1287--1292",
2941 keywords = "silicon compounds; wide band gap semiconductors; ion
2942 implantation; annealing; X-ray scattering; transmission
2943 electron microscopy",
2944 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2945 doi = "10.1063/1.1428105",
2946 notes = "3c-sic alignement to si host in ibs depending on
2947 temperature, might explain c into c sub trafo",
2951 author = "G Lucas and M Bertolus and L Pizzagalli",
2952 title = "An environment-dependent interatomic potential for
2953 silicon carbide: calculation of bulk properties,
2954 high-pressure phases, point and extended defects, and
2955 amorphous structures",
2956 journal = "J. Phys.: Condens. Matter",
2960 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2966 author = "J Godet and L Pizzagalli and S Brochard and P
2968 title = "Comparison between classical potentials and ab initio
2969 methods for silicon under large shear",
2970 journal = "J. Phys.: Condens. Matter",
2974 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2976 notes = "comparison of empirical potentials, stillinger weber,
2977 edip, tersoff, ab initio",
2980 @Article{moriguchi98,
2981 title = "Verification of Tersoff's Potential for Static
2982 Structural Analysis of Solids of Group-{IV} Elements",
2983 author = "Koji Moriguchi and Akira Shintani",
2984 journal = "Japanese J. Appl. Phys.",
2986 number = "Part 1, No. 2",
2990 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2991 doi = "10.1143/JJAP.37.414",
2992 publisher = "The Japan Society of Applied Physics",
2993 notes = "tersoff stringent test",
2996 @Article{mazzarolo01,
2997 title = "Low-energy recoils in crystalline silicon: Quantum
2999 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3000 Lulli and Eros Albertazzi",
3001 journal = "Phys. Rev. B",
3008 doi = "10.1103/PhysRevB.63.195207",
3009 publisher = "American Physical Society",
3012 @Article{holmstroem08,
3013 title = "Threshold defect production in silicon determined by
3014 density functional theory molecular dynamics
3016 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3017 journal = "Phys. Rev. B",
3024 doi = "10.1103/PhysRevB.78.045202",
3025 publisher = "American Physical Society",
3026 notes = "threshold displacement comparison empirical and ab
3030 @Article{nordlund97,
3031 title = "Repulsive interatomic potentials calculated using
3032 Hartree-Fock and density-functional theory methods",
3033 journal = "Nucl. Instrum. Methods Phys. Res. B",
3040 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3041 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3042 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3043 notes = "repulsive ab initio potential",
3047 title = "Efficiency of ab-initio total energy calculations for
3048 metals and semiconductors using a plane-wave basis
3050 journal = "Comput. Mater. Sci.",
3057 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3058 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3059 author = "G. Kresse and J. Furthm{\"{u}}ller",
3064 title = "Projector augmented-wave method",
3065 author = "P. E. Bl{\"o}chl",
3066 journal = "Phys. Rev. B",
3069 pages = "17953--17979",
3073 doi = "10.1103/PhysRevB.50.17953",
3074 publisher = "American Physical Society",
3075 notes = "paw method",
3079 title = "Norm-Conserving Pseudopotentials",
3080 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3081 journal = "Phys. Rev. Lett.",
3084 pages = "1494--1497",
3088 doi = "10.1103/PhysRevLett.43.1494",
3089 publisher = "American Physical Society",
3090 notes = "norm-conserving pseudopotentials",
3093 @Article{vanderbilt90,
3094 title = "Soft self-consistent pseudopotentials in a generalized
3095 eigenvalue formalism",
3096 author = "David Vanderbilt",
3097 journal = "Phys. Rev. B",
3100 pages = "7892--7895",
3104 doi = "10.1103/PhysRevB.41.7892",
3105 publisher = "American Physical Society",
3106 notes = "vasp pseudopotentials",
3110 title = "Accurate and simple density functional for the
3111 electronic exchange energy: Generalized gradient
3113 author = "John P. Perdew and Yue Wang",
3114 journal = "Phys. Rev. B",
3117 pages = "8800--8802",
3121 doi = "10.1103/PhysRevB.33.8800",
3122 publisher = "American Physical Society",
3123 notes = "rapid communication gga",
3127 title = "Generalized gradient approximations for exchange and
3128 correlation: {A} look backward and forward",
3129 journal = "Physica B: Condensed Matter",
3136 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3137 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3138 author = "John P. Perdew",
3139 notes = "gga overview",
3143 title = "Atoms, molecules, solids, and surfaces: Applications
3144 of the generalized gradient approximation for exchange
3146 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3147 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3148 and Carlos Fiolhais",
3149 journal = "Phys. Rev. B",
3152 pages = "6671--6687",
3156 doi = "10.1103/PhysRevB.46.6671",
3157 publisher = "American Physical Society",
3158 notes = "gga pw91 (as in vasp)",
3161 @Article{baldereschi73,
3162 title = "Mean-Value Point in the Brillouin Zone",
3163 author = "A. Baldereschi",
3164 journal = "Phys. Rev. B",
3167 pages = "5212--5215",
3171 doi = "10.1103/PhysRevB.7.5212",
3172 publisher = "American Physical Society",
3173 notes = "mean value k point",
3177 title = "Ab initio pseudopotential calculations of dopant
3179 journal = "Comput. Mater. Sci.",
3186 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3187 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3188 author = "Jing Zhu",
3189 keywords = "TED (transient enhanced diffusion)",
3190 keywords = "Boron dopant",
3191 keywords = "Carbon dopant",
3192 keywords = "Defect",
3193 keywords = "ab initio pseudopotential method",
3194 keywords = "Impurity cluster",
3195 notes = "binding of c to si interstitial, c in si defects",
3199 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3201 title = "Si{C} buried layer formation by ion beam synthesis at
3205 journal = "Appl. Phys. Lett.",
3208 pages = "2646--2648",
3209 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3210 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3211 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3212 ELECTRON MICROSCOPY",
3213 URL = "http://link.aip.org/link/?APL/66/2646/1",
3214 doi = "10.1063/1.113112",
3215 notes = "precipitation mechanism by substitutional carbon, si
3216 self interstitials react with further implanted c",
3220 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3221 Kolodzey and A. Hairie",
3223 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3227 journal = "J. Appl. Phys.",
3230 pages = "4631--4633",
3231 keywords = "silicon compounds; precipitation; localised modes;
3232 semiconductor epitaxial layers; infrared spectra;
3233 Fourier transform spectra; thermal stability;
3235 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3236 doi = "10.1063/1.368703",
3237 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3241 author = "R Jones and B J Coomer and P R Briddon",
3242 title = "Quantum mechanical modelling of defects in
3244 journal = "J. Phys.: Condens. Matter",
3248 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3250 notes = "ab inito init, vibrational modes, c defect in si",
3254 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3255 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3256 J. E. Greene and S. G. Bishop",
3258 title = "Carbon incorporation pathways and lattice sites in
3259 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3260 molecular-beam epitaxy",
3263 journal = "J. Appl. Phys.",
3266 pages = "5716--5727",
3267 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3268 doi = "10.1063/1.1465122",
3269 notes = "c substitutional incorporation pathway, dft and expt",
3273 title = "Dynamic properties of interstitial carbon and
3274 carbon-carbon pair defects in silicon",
3275 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3277 journal = "Phys. Rev. B",
3280 pages = "2188--2194",
3284 doi = "10.1103/PhysRevB.55.2188",
3285 publisher = "American Physical Society",
3286 notes = "ab initio c in si and di-carbon defect, no formation
3287 energies, different migration barriers and paths",
3291 title = "Interstitial carbon and the carbon-carbon pair in
3292 silicon: Semiempirical electronic-structure
3294 author = "Matthew J. Burnard and Gary G. DeLeo",
3295 journal = "Phys. Rev. B",
3298 pages = "10217--10225",
3302 doi = "10.1103/PhysRevB.47.10217",
3303 publisher = "American Physical Society",
3304 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3305 carbon defect, formation energies",
3309 title = "Electronic structure of interstitial carbon in
3311 author = "Morgan Besson and Gary G. DeLeo",
3312 journal = "Phys. Rev. B",
3315 pages = "4028--4033",
3319 doi = "10.1103/PhysRevB.43.4028",
3320 publisher = "American Physical Society",
3324 title = "Review of atomistic simulations of surface diffusion
3325 and growth on semiconductors",
3326 journal = "Comput. Mater. Sci.",
3331 note = "Proceedings of the Workshop on Virtual Molecular Beam
3334 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3335 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3336 author = "Efthimios Kaxiras",
3337 notes = "might contain c 100 db formation energy, overview md,
3338 tight binding, first principles",
3341 @Article{kaukonen98,
3342 title = "Effect of {N} and {B} doping on the growth of {CVD}
3344 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3346 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3347 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3349 journal = "Phys. Rev. B",
3352 pages = "9965--9970",
3356 doi = "10.1103/PhysRevB.57.9965",
3357 publisher = "American Physical Society",
3358 notes = "constrained conjugate gradient relaxation technique
3363 title = "Correlation between the antisite pair and the ${DI}$
3365 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3366 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3368 journal = "Phys. Rev. B",
3375 doi = "10.1103/PhysRevB.67.155203",
3376 publisher = "American Physical Society",
3380 title = "Production and recovery of defects in Si{C} after
3381 irradiation and deformation",
3382 journal = "J. Nucl. Mater.",
3385 pages = "1803--1808",
3389 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3390 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3391 author = "J. Chen and P. Jung and H. Klein",
3395 title = "Accumulation, dynamic annealing and thermal recovery
3396 of ion-beam-induced disorder in silicon carbide",
3397 journal = "Nucl. Instrum. Methods Phys. Res. B",
3404 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3405 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3406 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3409 @Article{bockstedte03,
3410 title = "Ab initio study of the migration of intrinsic defects
3412 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3414 journal = "Phys. Rev. B",
3421 doi = "10.1103/PhysRevB.68.205201",
3422 publisher = "American Physical Society",
3423 notes = "defect migration in sic",
3427 title = "Theoretical study of vacancy diffusion and
3428 vacancy-assisted clustering of antisites in Si{C}",
3429 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3431 journal = "Phys. Rev. B",
3438 doi = "10.1103/PhysRevB.68.155208",
3439 publisher = "American Physical Society",
3443 journal = "Telegrafiya i Telefoniya bez Provodov",
3447 author = "O. V. Lossev",
3451 title = "Luminous carborundum detector and detection effect and
3452 oscillations with crystals",
3453 journal = "Philosophical Magazine Series 7",
3456 pages = "1024--1044",
3458 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3459 author = "O. V. Lossev",
3463 journal = "Physik. Zeitschr.",
3467 author = "O. V. Lossev",
3471 journal = "Physik. Zeitschr.",
3475 author = "O. V. Lossev",
3479 journal = "Physik. Zeitschr.",
3483 author = "O. V. Lossev",
3487 title = "A note on carborundum",
3488 journal = "Electrical World",
3492 author = "H. J. Round",
3495 @Article{vashishath08,
3496 title = "Recent trends in silicon carbide device research",
3497 journal = "Mj. Int. J. Sci. Tech.",
3502 author = "Munish Vashishath and Ashoke K. Chatterjee",
3503 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3504 notes = "sic polytype electronic properties",
3508 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3510 title = "Growth and Properties of beta-Si{C} Single Crystals",
3513 journal = "Journal of Applied Physics",
3517 URL = "http://link.aip.org/link/?JAP/37/333/1",
3518 doi = "10.1063/1.1707837",
3519 notes = "sic melt growth",
3523 author = "A. E. van Arkel and J. H. de Boer",
3524 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3526 publisher = "WILEY-VCH Verlag GmbH",
3528 journal = "Z. Anorg. Chem.",
3531 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3532 doi = "10.1002/zaac.19251480133",
3533 notes = "van arkel apparatus",
3537 author = "K. Moers",
3539 journal = "Z. Anorg. Chem.",
3542 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3547 author = "J. T. Kendall",
3548 title = "Electronic Conduction in Silicon Carbide",
3551 journal = "The Journal of Chemical Physics",
3555 URL = "http://link.aip.org/link/?JCP/21/821/1",
3556 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3561 author = "J. A. Lely",
3563 journal = "Ber. Deut. Keram. Ges.",
3566 notes = "lely sublimation growth process",
3569 @Article{knippenberg63,
3570 author = "W. F. Knippenberg",
3572 journal = "Philips Res. Repts.",
3575 notes = "acheson process",
3578 @Article{hoffmann82,
3579 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3582 title = "Silicon carbide blue light emitting diodes with
3583 improved external quantum efficiency",
3586 journal = "Journal of Applied Physics",
3589 pages = "6962--6967",
3590 keywords = "light emitting diodes; silicon carbides; quantum
3591 efficiency; visible radiation; experimental data;
3592 epitaxy; fabrication; medium temperature; layers;
3593 aluminium; nitrogen; substrates; pn junctions;
3594 electroluminescence; spectra; current density;
3596 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3597 doi = "10.1063/1.330041",
3598 notes = "blue led, sublimation process",
3602 author = "Philip Neudeck",
3603 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3604 Road 44135 Cleveland OH",
3605 title = "Progress in silicon carbide semiconductor electronics
3607 journal = "Journal of Electronic Materials",
3608 publisher = "Springer Boston",
3610 keyword = "Chemistry and Materials Science",
3614 URL = "http://dx.doi.org/10.1007/BF02659688",
3615 note = "10.1007/BF02659688",
3617 notes = "sic data, advantages of 3c sic",
3620 @Article{bhatnagar93,
3621 author = "M. Bhatnagar and B. J. Baliga",
3622 journal = "Electron Devices, IEEE Transactions on",
3623 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3630 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3631 rectifiers;Si;SiC;breakdown voltages;drift region
3632 properties;output characteristics;power MOSFETs;power
3633 semiconductor devices;switching characteristics;thermal
3634 analysis;Schottky-barrier diodes;electric breakdown of
3635 solids;insulated gate field effect transistors;power
3636 transistors;semiconductor materials;silicon;silicon
3637 compounds;solid-state rectifiers;thermal analysis;",
3638 doi = "10.1109/16.199372",
3640 notes = "comparison 3c 6h sic and si devices",
3644 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3645 A. Powell and C. S. Salupo and L. G. Matus",
3646 journal = "Electron Devices, IEEE Transactions on",
3647 title = "Electrical properties of epitaxial 3{C}- and
3648 6{H}-Si{C} p-n junction diodes produced side-by-side on
3649 6{H}-Si{C} substrates",
3655 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3656 C;6H-SiC layers;6H-SiC substrates;CVD
3657 process;SiC;chemical vapor deposition;doping;electrical
3658 properties;epitaxial layers;light
3659 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3660 diodes;polytype;rectification characteristics;reverse
3661 leakage current;reverse voltages;temperature;leakage
3662 currents;power electronics;semiconductor
3663 diodes;semiconductor epitaxial layers;semiconductor
3664 growth;semiconductor materials;silicon
3665 compounds;solid-state rectifiers;substrates;vapour
3666 phase epitaxial growth;",
3667 doi = "10.1109/16.285038",
3669 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3674 author = "N. Schulze and D. L. Barrett and G. Pensl",
3676 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3677 single crystals by physical vapor transport",
3680 journal = "Applied Physics Letters",
3683 pages = "1632--1634",
3684 keywords = "silicon compounds; semiconductor materials;
3685 semiconductor growth; crystal growth from vapour;
3686 photoluminescence; Hall mobility",
3687 URL = "http://link.aip.org/link/?APL/72/1632/1",
3688 doi = "10.1063/1.121136",
3689 notes = "micropipe free 6h-sic pvt growth",
3693 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3695 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3698 journal = "Applied Physics Letters",
3702 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3703 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3704 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3705 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3707 URL = "http://link.aip.org/link/?APL/50/221/1",
3708 doi = "10.1063/1.97667",
3709 notes = "apb 3c-sic heteroepitaxy on si",
3712 @Article{shibahara86,
3713 title = "Surface morphology of cubic Si{C}(100) grown on
3714 Si(100) by chemical vapor deposition",
3715 journal = "Journal of Crystal Growth",
3722 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3723 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3724 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3726 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3729 @Article{desjardins96,
3730 author = "P. Desjardins and J. E. Greene",
3732 title = "Step-flow epitaxial growth on two-domain surfaces",
3735 journal = "Journal of Applied Physics",
3738 pages = "1423--1434",
3739 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3740 FILM GROWTH; SURFACE STRUCTURE",
3741 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3742 doi = "10.1063/1.360980",
3743 notes = "apb model",
3747 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3749 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3750 carbonization of silicon",
3753 journal = "Journal of Applied Physics",
3756 pages = "2070--2073",
3757 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3758 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3760 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3761 doi = "10.1063/1.360184",
3762 notes = "ssmbe of sic on si, lower temperatures",
3766 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3767 {MBE} using surface superstructure",
3768 journal = "Journal of Crystal Growth",
3775 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3776 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3777 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3778 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3779 notes = "gas source mbe of 3c-sic on 6h-sic",
3782 @Article{yoshinobu92,
3783 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3784 and Takashi Fuyuki and Hiroyuki Matsunami",
3786 title = "Lattice-matched epitaxial growth of single crystalline
3787 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3788 molecular beam epitaxy",
3791 journal = "Applied Physics Letters",
3795 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3796 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3797 INTERFACE STRUCTURE",
3798 URL = "http://link.aip.org/link/?APL/60/824/1",
3799 doi = "10.1063/1.107430",
3800 notes = "gas source mbe of 3c-sic on 6h-sic",
3803 @Article{yoshinobu90,
3804 title = "Atomic level control in gas source {MBE} growth of
3806 journal = "Journal of Crystal Growth",
3813 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3814 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3815 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3816 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3817 notes = "gas source mbe of 3c-sic on 3c-sic",
3821 title = "Atomic layer epitaxy controlled by surface
3822 superstructures in Si{C}",
3823 journal = "Thin Solid Films",
3830 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3831 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3832 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3834 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3839 title = "Microscopic mechanisms of accurate layer-by-layer
3840 growth of [beta]-Si{C}",
3841 journal = "Thin Solid Films",
3848 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3849 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3850 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3851 and S. Misawa and E. Sakuma and S. Yoshida",
3852 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3857 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3859 title = "Effects of gas flow ratio on silicon carbide thin film
3860 growth mode and polytype formation during gas-source
3861 molecular beam epitaxy",
3864 journal = "Applied Physics Letters",
3867 pages = "2851--2853",
3868 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3869 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3870 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3872 URL = "http://link.aip.org/link/?APL/65/2851/1",
3873 doi = "10.1063/1.112513",
3874 notes = "gas source mbe of 6h-sic on 6h-sic",
3878 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3879 title = "Heterointerface Control and Epitaxial Growth of
3880 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3881 publisher = "WILEY-VCH Verlag",
3883 journal = "physica status solidi (b)",
3886 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3891 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3892 journal = "Journal of Crystal Growth",
3899 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3900 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3901 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3902 keywords = "Reflection high-energy electron diffraction (RHEED)",
3903 keywords = "Scanning electron microscopy (SEM)",
3904 keywords = "Silicon carbide",
3905 keywords = "Silicon",
3906 keywords = "Island growth",
3907 notes = "lower temperature, 550-700",
3910 @Article{hatayama95,
3911 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3912 on Si using hydrocarbon radicals by gas source
3913 molecular beam epitaxy",
3914 journal = "Journal of Crystal Growth",
3921 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3922 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3923 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3924 and Hiroyuki Matsunami",
3928 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3929 title = "The Preference of Silicon Carbide for Growth in the
3930 Metastable Cubic Form",
3931 journal = "Journal of the American Ceramic Society",
3934 publisher = "Blackwell Publishing Ltd",
3936 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
3937 doi = "10.1111/j.1151-2916.1991.tb06811.x",
3938 pages = "2630--2633",
3939 keywords = "silicon carbide, crystal growth, crystal structure,
3940 calculations, stability",
3942 notes = "3c-sic metastable, 3c-sic preferred growth, sic
3943 polytype dft calculation refs",
3946 @Article{allendorf91,
3947 title = "The adsorption of {H}-atoms on polycrystalline
3948 [beta]-silicon carbide",
3949 journal = "Surface Science",
3956 doi = "DOI: 10.1016/0039-6028(91)90912-C",
3957 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
3958 author = "Mark D. Allendorf and Duane A. Outka",
3959 notes = "h adsorption on 3c-sic",
3962 @Article{eaglesham93,
3963 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
3964 D. P. Adams and S. M. Yalisove",
3966 title = "Effect of {H} on Si molecular-beam epitaxy",
3969 journal = "Journal of Applied Physics",
3972 pages = "6615--6618",
3973 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
3974 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
3975 DIFFUSION; ADSORPTION",
3976 URL = "http://link.aip.org/link/?JAP/74/6615/1",
3977 doi = "10.1063/1.355101",
3978 notes = "h incorporation on si surface, lower surface
3983 author = "Ronald C. Newman",
3984 title = "Carbon in Crystalline Silicon",
3985 journal = "MRS Online Proceedings Library",
3990 doi = "10.1557/PROC-59-403",
3991 URL = "http://dx.doi.org/10.1557/PROC-59-403",
3992 eprint = "http://journals.cambridge.org/article_S194642740054367X",
3996 author = "U. Gösele",
3997 title = "The Role of Carbon and Point Defects in Silicon",
3998 journal = "MRS Online Proceedings Library",
4003 doi = "10.1557/PROC-59-419",
4004 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4005 eprint = "http://journals.cambridge.org/article_S1946427400543681",