2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philosophical Magazine Part B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Applied Physics A: Materials Science \& Processing",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 author = "P. S. de Laplace",
97 title = "Th\'eorie analytique des probabilit\'es",
98 series = "Oeuvres Compl\`etes de Laplace",
100 publisher = "Gauthier-Villars",
104 @Article{mattoni2007,
105 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
106 title = "{Atomistic modeling of brittleness in covalent
108 journal = "Phys. Rev. B",
114 doi = "10.1103/PhysRevB.76.224103",
115 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
116 longe(r)-range-interactions, brittle propagation of
117 fracture, more available potentials, universal energy
118 relation (uer), minimum range model (mrm)",
122 title = "Comparative study of silicon empirical interatomic
124 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
125 journal = "Phys. Rev. B",
128 pages = "2250--2279",
132 doi = "10.1103/PhysRevB.46.2250",
133 publisher = "American Physical Society",
134 notes = "comparison of classical potentials for si",
138 title = "Stress relaxation in $a-Si$ induced by ion
140 author = "H. M. Urbassek M. Koster",
141 journal = "Phys. Rev. B",
144 pages = "11219--11224",
148 doi = "10.1103/PhysRevB.62.11219",
149 publisher = "American Physical Society",
150 notes = "virial derivation for 3-body tersoff potential",
153 @Article{breadmore99,
154 title = "Direct simulation of ion-beam-induced stressing and
155 amorphization of silicon",
156 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
157 journal = "Phys. Rev. B",
160 pages = "12610--12616",
164 doi = "10.1103/PhysRevB.60.12610",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
170 author = "Henri Moissan",
171 title = "Nouvelles recherches sur la météorité de Cañon
173 journal = "Comptes rendus de l'Académie des Sciences",
180 author = "Y. S. Park",
181 title = "Si{C} Materials and Devices",
182 publisher = "Academic Press",
183 address = "San Diego",
188 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
189 Calvin H. Carter Jr. and D. Asbury",
190 title = "Si{C} Seeded Boule Growth",
191 journal = "Materials Science Forum",
195 notes = "modified lely process, micropipes",
199 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
200 Thermodynamical Properties of Lennard-Jones Molecules",
201 author = "Loup Verlet",
202 journal = "Phys. Rev.",
208 doi = "10.1103/PhysRev.159.98",
209 publisher = "American Physical Society",
210 notes = "velocity verlet integration algorithm equation of
214 @Article{berendsen84,
215 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
216 Gunsteren and A. DiNola and J. R. Haak",
218 title = "Molecular dynamics with coupling to an external bath",
221 journal = "The Journal of Chemical Physics",
224 pages = "3684--3690",
225 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
226 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
227 URL = "http://link.aip.org/link/?JCP/81/3684/1",
228 doi = "10.1063/1.448118",
229 notes = "berendsen thermostat barostat",
233 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
235 title = "Molecular dynamics determination of defect energetics
236 in beta -Si{C} using three representative empirical
238 journal = "Modelling and Simulation in Materials Science and
243 URL = "http://stacks.iop.org/0965-0393/3/615",
244 notes = "comparison of tersoff, pearson and eam for defect
245 energetics in sic; (m)eam parameters for sic",
250 title = "Relationship between the embedded-atom method and
252 author = "Donald W. Brenner",
253 journal = "Phys. Rev. Lett.",
260 doi = "10.1103/PhysRevLett.63.1022",
261 publisher = "American Physical Society",
262 notes = "relation of tersoff and eam potential",
266 title = "Molecular-dynamics study of self-interstitials in
268 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
269 journal = "Phys. Rev. B",
272 pages = "9552--9558",
276 doi = "10.1103/PhysRevB.35.9552",
277 publisher = "American Physical Society",
278 notes = "selft-interstitials in silicon, stillinger-weber,
279 calculation of defect formation energy, defect
284 title = "Extended interstitials in silicon and germanium",
285 author = "H. R. Schober",
286 journal = "Phys. Rev. B",
289 pages = "13013--13015",
293 doi = "10.1103/PhysRevB.39.13013",
294 publisher = "American Physical Society",
295 notes = "stillinger-weber silicon 110 stable and metastable
296 dumbbell configuration",
300 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
301 Defect accumulation, topological features, and
303 author = "F. Gao and W. J. Weber",
304 journal = "Phys. Rev. B",
311 doi = "10.1103/PhysRevB.66.024106",
312 publisher = "American Physical Society",
313 notes = "sic intro, si cascade in 3c-sic, amorphization,
314 tersoff modified, pair correlation of amorphous sic, md
318 @Article{devanathan98,
319 title = "Computer simulation of a 10 ke{V} Si displacement
321 journal = "Nuclear Instruments and Methods in Physics Research
322 Section B: Beam Interactions with Materials and Atoms",
328 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
329 author = "R. Devanathan and W. J. Weber and T. Diaz de la
331 notes = "modified tersoff short range potential, ab initio
335 @Article{devanathan98_2,
336 title = "Displacement threshold energies in [beta]-Si{C}",
337 journal = "Journal of Nuclear Materials",
343 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
344 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
346 notes = "modified tersoff, ab initio, combined ab initio
350 @Article{kitabatake00,
351 title = "Si{C}/Si heteroepitaxial growth",
352 author = "M. Kitabatake",
353 journal = "Thin Solid Films",
358 notes = "md simulation, sic si heteroepitaxy, mbe",
362 title = "Intrinsic point defects in crystalline silicon:
363 Tight-binding molecular dynamics studies of
364 self-diffusion, interstitial-vacancy recombination, and
366 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
368 journal = "Phys. Rev. B",
371 pages = "14279--14289",
375 doi = "10.1103/PhysRevB.55.14279",
376 publisher = "American Physical Society",
377 notes = "si self interstitial, diffusion, tbmd",
381 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
384 title = "A kinetic Monte--Carlo study of the effective
385 diffusivity of the silicon self-interstitial in the
386 presence of carbon and boron",
389 journal = "Journal of Applied Physics",
392 pages = "1963--1967",
393 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
394 CARBON ADDITIONS; BORON ADDITIONS; elemental
395 semiconductors; self-diffusion",
396 URL = "http://link.aip.org/link/?JAP/84/1963/1",
397 doi = "10.1063/1.368328",
398 notes = "kinetic monte carlo of si self interstitial
403 title = "Barrier to Migration of the Silicon
405 author = "Y. Bar-Yam and J. D. Joannopoulos",
406 journal = "Phys. Rev. Lett.",
409 pages = "1129--1132",
413 doi = "10.1103/PhysRevLett.52.1129",
414 publisher = "American Physical Society",
415 notes = "si self-interstitial migration barrier",
418 @Article{bar-yam84_2,
419 title = "Electronic structure and total-energy migration
420 barriers of silicon self-interstitials",
421 author = "Y. Bar-Yam and J. D. Joannopoulos",
422 journal = "Phys. Rev. B",
425 pages = "1844--1852",
429 doi = "10.1103/PhysRevB.30.1844",
430 publisher = "American Physical Society",
434 title = "First-principles calculations of self-diffusion
435 constants in silicon",
436 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
437 and D. B. Laks and W. Andreoni and S. T. Pantelides",
438 journal = "Phys. Rev. Lett.",
441 pages = "2435--2438",
445 doi = "10.1103/PhysRevLett.70.2435",
446 publisher = "American Physical Society",
447 notes = "si self int diffusion by ab initio md, formation
448 entropy calculations",
452 title = "Tight-binding theory of native point defects in
454 author = "L. Colombo",
455 journal = "Annu. Rev. Mater. Res.",
460 doi = "10.1146/annurev.matsci.32.111601.103036",
461 publisher = "Annual Reviews",
462 notes = "si self interstitial, tbmd, virial stress",
465 @Article{al-mushadani03,
466 title = "Free-energy calculations of intrinsic point defects in
468 author = "O. K. Al-Mushadani and R. J. Needs",
469 journal = "Phys. Rev. B",
476 doi = "10.1103/PhysRevB.68.235205",
477 publisher = "American Physical Society",
478 notes = "formation energies of intrinisc point defects in
479 silicon, si self interstitials, free energy",
482 @Article{goedecker02,
483 title = "A Fourfold Coordinated Point Defect in Silicon",
484 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
485 journal = "Phys. Rev. Lett.",
492 doi = "10.1103/PhysRevLett.88.235501",
493 publisher = "American Physical Society",
494 notes = "first time ffcd, fourfold coordinated point defect in
499 title = "Ab initio study of self-diffusion in silicon over a
500 wide temperature range: Point defect states and
501 migration mechanisms",
502 author = "Shangyi Ma and Shaoqing Wang",
503 journal = "Phys. Rev. B",
510 doi = "10.1103/PhysRevB.81.193203",
511 publisher = "American Physical Society",
512 notes = "si self interstitial diffusion + refs",
516 title = "Atomistic simulations on the thermal stability of the
517 antisite pair in 3{C}- and 4{H}-Si{C}",
518 author = "M. Posselt and F. Gao and W. J. Weber",
519 journal = "Phys. Rev. B",
526 doi = "10.1103/PhysRevB.73.125206",
527 publisher = "American Physical Society",
531 title = "Correlation between self-diffusion in Si and the
532 migration mechanisms of vacancies and
533 self-interstitials: An atomistic study",
534 author = "M. Posselt and F. Gao and H. Bracht",
535 journal = "Phys. Rev. B",
542 doi = "10.1103/PhysRevB.78.035208",
543 publisher = "American Physical Society",
544 notes = "si self-interstitial and vacancy diffusion, stillinger
549 title = "Ab initio and empirical-potential studies of defect
550 properties in $3{C}-Si{C}$",
551 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
553 journal = "Phys. Rev. B",
560 doi = "10.1103/PhysRevB.64.245208",
561 publisher = "American Physical Society",
562 notes = "defects in 3c-sic",
566 title = "Empirical potential approach for defect properties in
568 journal = "Nuclear Instruments and Methods in Physics Research
569 Section B: Beam Interactions with Materials and Atoms",
576 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
577 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
578 author = "Fei Gao and William J. Weber",
579 keywords = "Empirical potential",
580 keywords = "Defect properties",
581 keywords = "Silicon carbide",
582 keywords = "Computer simulation",
583 notes = "sic potential, brenner type, like erhart/albe",
587 title = "Atomistic study of intrinsic defect migration in
589 author = "Fei Gao and William J. Weber and M. Posselt and V.
591 journal = "Phys. Rev. B",
598 doi = "10.1103/PhysRevB.69.245205",
599 publisher = "American Physical Society",
600 notes = "defect migration in sic",
604 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
607 title = "Ab Initio atomic simulations of antisite pair recovery
608 in cubic silicon carbide",
611 journal = "Applied Physics Letters",
617 keywords = "ab initio calculations; silicon compounds; antisite
618 defects; wide band gap semiconductors; molecular
619 dynamics method; density functional theory;
620 electron-hole recombination; photoluminescence;
621 impurities; diffusion",
622 URL = "http://link.aip.org/link/?APL/90/221915/1",
623 doi = "10.1063/1.2743751",
626 @Article{mattoni2002,
627 title = "Self-interstitial trapping by carbon complexes in
628 crystalline silicon",
629 author = "A. Mattoni and F. Bernardini and L. Colombo",
630 journal = "Phys. Rev. B",
637 doi = "10.1103/PhysRevB.66.195214",
638 publisher = "American Physical Society",
639 notes = "c in c-si, diffusion, interstitial configuration +
640 links, interaction of carbon and silicon interstitials,
641 tersoff suitability",
645 title = "Calculations of Silicon Self-Interstitial Defects",
646 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
648 journal = "Phys. Rev. Lett.",
651 pages = "2351--2354",
655 doi = "10.1103/PhysRevLett.83.2351",
656 publisher = "American Physical Society",
657 notes = "nice images of the defects, si defect overview +
662 title = "Identification of the migration path of interstitial
664 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
665 journal = "Phys. Rev. B",
668 pages = "7439--7442",
672 doi = "10.1103/PhysRevB.50.7439",
673 publisher = "American Physical Society",
674 notes = "carbon interstitial migration path shown, 001 c-si
679 title = "Theory of carbon-carbon pairs in silicon",
680 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
681 journal = "Phys. Rev. B",
684 pages = "9845--9850",
688 doi = "10.1103/PhysRevB.58.9845",
689 publisher = "American Physical Society",
690 notes = "carbon pairs in si",
694 title = "Ab initio investigation of carbon-related defects in
696 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
698 journal = "Phys. Rev. B",
701 pages = "12554--12557",
705 doi = "10.1103/PhysRevB.47.12554",
706 publisher = "American Physical Society",
707 notes = "c interstitials in crystalline silicon",
711 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
713 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
714 Sokrates T. Pantelides",
715 journal = "Phys. Rev. Lett.",
718 pages = "1814--1817",
722 doi = "10.1103/PhysRevLett.52.1814",
723 publisher = "American Physical Society",
724 notes = "microscopic theory diffusion silicon dft migration
729 title = "Unified Approach for Molecular Dynamics and
730 Density-Functional Theory",
731 author = "R. Car and M. Parrinello",
732 journal = "Phys. Rev. Lett.",
735 pages = "2471--2474",
739 doi = "10.1103/PhysRevLett.55.2471",
740 publisher = "American Physical Society",
741 notes = "car parrinello method, dft and md",
745 title = "Short-range order, bulk moduli, and physical trends in
746 c-$Si1-x$$Cx$ alloys",
747 author = "P. C. Kelires",
748 journal = "Phys. Rev. B",
751 pages = "8784--8787",
755 doi = "10.1103/PhysRevB.55.8784",
756 publisher = "American Physical Society",
757 notes = "c strained si, montecarlo md, bulk moduli, next
762 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
763 Application to the $Si1-x-yGexCy$ System",
764 author = "P. C. Kelires",
765 journal = "Phys. Rev. Lett.",
768 pages = "1114--1117",
772 doi = "10.1103/PhysRevLett.75.1114",
773 publisher = "American Physical Society",
774 notes = "mc md, strain compensation in si ge by c insertion",
778 title = "Low temperature electron irradiation of silicon
780 journal = "Solid State Communications",
787 doi = "DOI: 10.1016/0038-1098(70)90074-8",
788 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
789 author = "A. R. Bean and R. C. Newman",
793 title = "{EPR} Observation of the Isolated Interstitial Carbon
795 author = "G. D. Watkins and K. L. Brower",
796 journal = "Phys. Rev. Lett.",
799 pages = "1329--1332",
803 doi = "10.1103/PhysRevLett.36.1329",
804 publisher = "American Physical Society",
805 notes = "epr observations of 100 interstitial carbon atom in
810 title = "{EPR} identification of the single-acceptor state of
811 interstitial carbon in silicon",
812 author = "L. W. Song and G. D. Watkins",
813 journal = "Phys. Rev. B",
816 pages = "5759--5764",
820 doi = "10.1103/PhysRevB.42.5759",
821 publisher = "American Physical Society",
822 notes = "carbon diffusion in silicon",
826 author = "A K Tipping and R C Newman",
827 title = "The diffusion coefficient of interstitial carbon in
829 journal = "Semiconductor Science and Technology",
833 URL = "http://stacks.iop.org/0268-1242/2/315",
835 notes = "diffusion coefficient of carbon interstitials in
840 title = "Carbon incorporation into Si at high concentrations by
841 ion implantation and solid phase epitaxy",
842 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
843 Picraux and J. K. Watanabe and J. W. Mayer",
844 journal = "J. Appl. Phys.",
849 doi = "10.1063/1.360806",
850 notes = "strained silicon, carbon supersaturation",
853 @Article{laveant2002,
854 title = "Epitaxy of carbon-rich silicon with {MBE}",
855 journal = "Materials Science and Engineering B",
861 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
862 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
863 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
865 notes = "low c in si, tensile stress to compensate compressive
866 stress, avoid sic precipitation",
870 author = "P. Werner and S. Eichler and G. Mariani and R.
871 K{\"{o}}gler and W. Skorupa",
872 title = "Investigation of {C}[sub x]Si defects in {C} implanted
873 silicon by transmission electron microscopy",
876 journal = "Applied Physics Letters",
880 keywords = "silicon; ion implantation; carbon; crystal defects;
881 transmission electron microscopy; annealing; positron
882 annihilation; secondary ion mass spectroscopy; buried
883 layers; precipitation",
884 URL = "http://link.aip.org/link/?APL/70/252/1",
885 doi = "10.1063/1.118381",
886 notes = "si-c complexes, agglomerate, sic in si matrix, sic
890 @InProceedings{werner96,
891 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
893 booktitle = "Ion Implantation Technology. Proceedings of the 11th
894 International Conference on",
895 title = "{TEM} investigation of {C}-Si defects in carbon
902 keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
903 atom/radiation induced defect interaction;C depth
904 distribution;C precipitation;C-Si defects;C-Si
905 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
906 energy ion implantation;ion implantation;metastable
907 agglomerates;microdefects;positron annihilation
908 spectroscopy;rapid thermal annealing;secondary ion mass
909 spectrometry;vacancy clusters;buried
910 layers;carbon;elemental semiconductors;impurity-defect
911 interactions;ion implantation;positron
912 annihilation;precipitation;rapid thermal
913 annealing;secondary ion mass
914 spectra;silicon;transmission electron
915 microscopy;vacancies (crystal);",
916 doi = "10.1109/IIT.1996.586497",
918 notes = "c-si agglomerates dumbbells",
922 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
923 Picraux and J. K. Watanabe and J. W. Mayer",
925 title = "Precipitation and relaxation in strained Si[sub 1 -
926 y]{C}[sub y]/Si heterostructures",
929 journal = "Journal of Applied Physics",
932 pages = "3656--3668",
933 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
934 URL = "http://link.aip.org/link/?JAP/76/3656/1",
935 doi = "10.1063/1.357429",
936 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
937 precipitation by substitutional carbon, coherent prec,
938 coherent to incoherent transition strain vs interface
943 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
946 title = "Investigation of the high temperature behavior of
947 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
950 journal = "Journal of Applied Physics",
953 pages = "1934--1937",
954 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
955 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
956 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
957 TEMPERATURE RANGE 04001000 K",
958 URL = "http://link.aip.org/link/?JAP/77/1934/1",
959 doi = "10.1063/1.358826",
963 title = "Prospects for device implementation of wide band gap
965 author = "J. H. Edgar",
966 journal = "J. Mater. Res.",
971 doi = "10.1557/JMR.1992.0235",
972 notes = "properties wide band gap semiconductor, sic
976 @Article{zirkelbach2007,
977 title = "Monte Carlo simulation study of a selforganisation
978 process leading to ordered precipitate structures",
979 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
981 journal = "Nucl. Instr. and Meth. B",
988 doi = "doi:10.1016/j.nimb.2006.12.118",
989 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
993 @Article{zirkelbach2006,
994 title = "Monte-Carlo simulation study of the self-organization
995 of nanometric amorphous precipitates in regular arrays
996 during ion irradiation",
997 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
999 journal = "Nucl. Instr. and Meth. B",
1006 doi = "doi:10.1016/j.nimb.2005.08.162",
1007 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1011 @Article{zirkelbach2005,
1012 title = "Modelling of a selforganization process leading to
1013 periodic arrays of nanometric amorphous precipitates by
1015 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1017 journal = "Comp. Mater. Sci.",
1024 doi = "doi:10.1016/j.commatsci.2004.12.016",
1025 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1029 @Article{zirkelbach09,
1030 title = "Molecular dynamics simulation of defect formation and
1031 precipitation in heavily carbon doped silicon",
1032 journal = "Materials Science and Engineering: B",
1037 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1038 Silicon Materials Research for Electronic and
1039 Photovoltaic Applications",
1041 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1042 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1043 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1045 keywords = "Silicon",
1046 keywords = "Carbon",
1047 keywords = "Silicon carbide",
1048 keywords = "Nucleation",
1049 keywords = "Defect formation",
1050 keywords = "Molecular dynamics simulations",
1053 @Article{zirkelbach10a,
1054 title = "Defects in Carbon implanted Silicon calculated by
1055 classical potentials and first principles methods",
1056 journal = "to be published",
1061 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1062 K. N. Lindner and W. G. Schmidtd and E. Rauls",
1065 @Article{zirkelbach10b,
1066 title = "Extensive first principles study of carbon defects in
1068 journal = "to be published",
1073 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1074 K. N. Lindner and W. G. Schmidtd and E. Rauls",
1077 @Article{zirkelbach10c,
1079 journal = "to be published",
1084 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1085 K. N. Lindner and W. G. Schmidtd and E. Rauls",
1089 title = "Controlling the density distribution of Si{C}
1090 nanocrystals for the ion beam synthesis of buried Si{C}
1092 journal = "Nuclear Instruments and Methods in Physics Research
1093 Section B: Beam Interactions with Materials and Atoms",
1100 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1101 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1102 author = "J. K. N. Lindner and B. Stritzker",
1103 notes = "two-step implantation process",
1106 @Article{lindner99_2,
1107 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1109 journal = "Nuclear Instruments and Methods in Physics Research
1110 Section B: Beam Interactions with Materials and Atoms",
1116 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1117 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1118 author = "J. K. N. Lindner and B. Stritzker",
1119 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1123 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1124 Basic physical processes",
1125 journal = "Nuclear Instruments and Methods in Physics Research
1126 Section B: Beam Interactions with Materials and Atoms",
1133 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1134 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1135 author = "J{\"{o}}rg K. N. Lindner",
1139 title = "High-dose carbon implantations into silicon:
1140 fundamental studies for new technological tricks",
1141 author = "J. K. N. Lindner",
1142 journal = "Appl. Phys. A",
1146 doi = "10.1007/s00339-002-2062-8",
1147 notes = "ibs, burried sic layers",
1151 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1152 application in buffer layer for Ga{N} epitaxial
1154 journal = "Applied Surface Science",
1159 note = "APHYS'03 Special Issue",
1161 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1162 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1163 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1164 and S. Nishio and K. Yasuda and Y. Ishigami",
1165 notes = "gan on 3c-sic",
1169 author = "B. J. Alder and T. E. Wainwright",
1170 title = "Phase Transition for a Hard Sphere System",
1173 journal = "The Journal of Chemical Physics",
1176 pages = "1208--1209",
1177 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1178 doi = "10.1063/1.1743957",
1182 author = "B. J. Alder and T. E. Wainwright",
1183 title = "Studies in Molecular Dynamics. {I}. General Method",
1186 journal = "The Journal of Chemical Physics",
1190 URL = "http://link.aip.org/link/?JCP/31/459/1",
1191 doi = "10.1063/1.1730376",
1194 @Article{tersoff_si1,
1195 title = "New empirical model for the structural properties of
1197 author = "J. Tersoff",
1198 journal = "Phys. Rev. Lett.",
1205 doi = "10.1103/PhysRevLett.56.632",
1206 publisher = "American Physical Society",
1209 @Article{tersoff_si2,
1210 title = "New empirical approach for the structure and energy of
1212 author = "J. Tersoff",
1213 journal = "Phys. Rev. B",
1216 pages = "6991--7000",
1220 doi = "10.1103/PhysRevB.37.6991",
1221 publisher = "American Physical Society",
1224 @Article{tersoff_si3,
1225 title = "Empirical interatomic potential for silicon with
1226 improved elastic properties",
1227 author = "J. Tersoff",
1228 journal = "Phys. Rev. B",
1231 pages = "9902--9905",
1235 doi = "10.1103/PhysRevB.38.9902",
1236 publisher = "American Physical Society",
1240 title = "Empirical Interatomic Potential for Carbon, with
1241 Applications to Amorphous Carbon",
1242 author = "J. Tersoff",
1243 journal = "Phys. Rev. Lett.",
1246 pages = "2879--2882",
1250 doi = "10.1103/PhysRevLett.61.2879",
1251 publisher = "American Physical Society",
1255 title = "Modeling solid-state chemistry: Interatomic potentials
1256 for multicomponent systems",
1257 author = "J. Tersoff",
1258 journal = "Phys. Rev. B",
1261 pages = "5566--5568",
1265 doi = "10.1103/PhysRevB.39.5566",
1266 publisher = "American Physical Society",
1270 title = "Carbon defects and defect reactions in silicon",
1271 author = "J. Tersoff",
1272 journal = "Phys. Rev. Lett.",
1275 pages = "1757--1760",
1279 doi = "10.1103/PhysRevLett.64.1757",
1280 publisher = "American Physical Society",
1284 title = "Point defects and dopant diffusion in silicon",
1285 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1286 journal = "Rev. Mod. Phys.",
1293 doi = "10.1103/RevModPhys.61.289",
1294 publisher = "American Physical Society",
1298 title = "Silicon carbide: synthesis and processing",
1299 journal = "Nuclear Instruments and Methods in Physics Research
1300 Section B: Beam Interactions with Materials and Atoms",
1305 note = "Radiation Effects in Insulators",
1307 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1308 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1309 author = "W. Wesch",
1313 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1314 Lin and B. Sverdlov and M. Burns",
1316 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1317 ZnSe-based semiconductor device technologies",
1320 journal = "Journal of Applied Physics",
1323 pages = "1363--1398",
1324 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1325 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1326 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1328 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1329 doi = "10.1063/1.358463",
1330 notes = "sic intro, properties",
1334 author = "P. G. Neudeck",
1335 title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
1336 {ELECTRONICS} {TECHNOLOGY}",
1337 journal = "Journal of Electronic Materials",
1346 author = "Noch Unbekannt",
1347 title = "How to find references",
1348 journal = "Journal of Applied References",
1355 title = "Atomistic simulation of thermomechanical properties of
1357 author = "Meijie Tang and Sidney Yip",
1358 journal = "Phys. Rev. B",
1361 pages = "15150--15159",
1364 doi = "10.1103/PhysRevB.52.15150",
1365 notes = "modified tersoff, scale cutoff with volume, promising
1366 tersoff reparametrization",
1367 publisher = "American Physical Society",
1371 title = "Silicon carbide as a new {MEMS} technology",
1372 journal = "Sensors and Actuators A: Physical",
1378 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1379 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1380 author = "Pasqualina M. Sarro",
1382 keywords = "Silicon carbide",
1383 keywords = "Micromachining",
1384 keywords = "Mechanical stress",
1388 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1389 semiconductor for high-temperature applications: {A}
1391 journal = "Solid-State Electronics",
1394 pages = "1409--1422",
1397 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1398 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1399 author = "J. B. Casady and R. W. Johnson",
1400 notes = "sic intro",
1403 @Article{giancarli98,
1404 title = "Design requirements for Si{C}/Si{C} composites
1405 structural material in fusion power reactor blankets",
1406 journal = "Fusion Engineering and Design",
1412 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1413 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1414 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1415 Marois and N. B. Morley and J. F. Salavy",
1419 title = "Electrical and optical characterization of Si{C}",
1420 journal = "Physica B: Condensed Matter",
1426 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1427 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1428 author = "G. Pensl and W. J. Choyke",
1432 title = "Investigation of growth processes of ingots of silicon
1433 carbide single crystals",
1434 journal = "Journal of Crystal Growth",
1439 notes = "modified lely process",
1441 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1442 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1443 author = "Yu. M. Tairov and V. F. Tsvetkov",
1447 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1450 title = "Production of large-area single-crystal wafers of
1451 cubic Si{C} for semiconductor devices",
1454 journal = "Applied Physics Letters",
1458 keywords = "silicon carbides; layers; chemical vapor deposition;
1460 URL = "http://link.aip.org/link/?APL/42/460/1",
1461 doi = "10.1063/1.93970",
1462 notes = "cvd of 3c-sic on si, sic buffer layer",
1466 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1467 and Hiroyuki Matsunami",
1469 title = "Epitaxial growth and electric characteristics of cubic
1473 journal = "Journal of Applied Physics",
1476 pages = "4889--4893",
1477 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1478 doi = "10.1063/1.338355",
1479 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1484 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1486 title = "Growth and Characterization of Cubic Si{C}
1487 Single-Crystal Films on Si",
1490 journal = "Journal of The Electrochemical Society",
1493 pages = "1558--1565",
1494 keywords = "semiconductor materials; silicon compounds; carbon
1495 compounds; crystal morphology; electron mobility",
1496 URL = "http://link.aip.org/link/?JES/134/1558/1",
1497 doi = "10.1149/1.2100708",
1498 notes = "blue light emitting diodes (led)",
1502 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1503 and Hiroyuki Matsunami",
1504 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1508 journal = "Journal of Applied Physics",
1512 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1513 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1515 URL = "http://link.aip.org/link/?JAP/73/726/1",
1516 doi = "10.1063/1.353329",
1517 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1521 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1522 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1523 Yoganathan and J. Yang and P. Pirouz",
1525 title = "Growth of improved quality 3{C}-Si{C} films on
1526 6{H}-Si{C} substrates",
1529 journal = "Applied Physics Letters",
1532 pages = "1353--1355",
1533 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1534 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1535 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1537 URL = "http://link.aip.org/link/?APL/56/1353/1",
1538 doi = "10.1063/1.102512",
1539 notes = "cvd of 3c-sic on 6h-sic",
1543 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1544 Thokala and M. J. Loboda",
1546 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1547 films on 6{H}-Si{C} by chemical vapor deposition from
1551 journal = "Journal of Applied Physics",
1554 pages = "1271--1273",
1555 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1556 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1558 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1559 doi = "10.1063/1.360368",
1560 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1564 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1565 [alpha]-Si{C}(0001) at low temperatures by solid-source
1566 molecular beam epitaxy",
1567 journal = "Journal of Crystal Growth",
1573 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1574 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1575 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1576 Schr{\"{o}}ter and W. Richter",
1577 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1580 @Article{fissel95_apl,
1581 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1583 title = "Low-temperature growth of Si{C} thin films on Si and
1584 6{H}--Si{C} by solid-source molecular beam epitaxy",
1587 journal = "Applied Physics Letters",
1590 pages = "3182--3184",
1591 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1593 URL = "http://link.aip.org/link/?APL/66/3182/1",
1594 doi = "10.1063/1.113716",
1595 notes = "mbe 3c-sic on si and 6h-sic",
1599 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1601 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1605 journal = "Applied Physics Letters",
1609 URL = "http://link.aip.org/link/?APL/18/509/1",
1610 doi = "10.1063/1.1653516",
1611 notes = "first time sic by ibs, follow cites for precipitation
1616 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1617 J. Davis and G. E. Celler",
1619 title = "Formation of buried layers of beta-Si{C} using ion
1620 beam synthesis and incoherent lamp annealing",
1623 journal = "Applied Physics Letters",
1626 pages = "2242--2244",
1627 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1628 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1629 URL = "http://link.aip.org/link/?APL/51/2242/1",
1630 doi = "10.1063/1.98953",
1631 notes = "nice tem images, sic by ibs",
1635 author = "R. I. Scace and G. A. Slack",
1637 title = "Solubility of Carbon in Silicon and Germanium",
1640 journal = "The Journal of Chemical Physics",
1643 pages = "1551--1555",
1644 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1645 doi = "10.1063/1.1730236",
1646 notes = "solubility of c in c-si, si-c phase diagram",
1650 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1651 F. W. Saris and W. Vandervorst",
1653 title = "Role of {C} and {B} clusters in transient diffusion of
1657 journal = "Applied Physics Letters",
1660 pages = "1150--1152",
1661 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1662 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1664 URL = "http://link.aip.org/link/?APL/68/1150/1",
1665 doi = "10.1063/1.115706",
1666 notes = "suppression of transient enhanced diffusion (ted)",
1670 title = "Implantation and transient boron diffusion: the role
1671 of the silicon self-interstitial",
1672 journal = "Nuclear Instruments and Methods in Physics Research
1673 Section B: Beam Interactions with Materials and Atoms",
1678 note = "Selected Papers of the Tenth International Conference
1679 on Ion Implantation Technology (IIT '94)",
1681 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1682 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1683 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1688 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1689 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1690 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1693 title = "Physical mechanisms of transient enhanced dopant
1694 diffusion in ion-implanted silicon",
1697 journal = "Journal of Applied Physics",
1700 pages = "6031--6050",
1701 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1702 doi = "10.1063/1.364452",
1703 notes = "ted, transient enhanced diffusion, c silicon trap",
1707 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1709 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1710 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1713 journal = "Applied Physics Letters",
1717 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1718 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1719 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1721 URL = "http://link.aip.org/link/?APL/64/324/1",
1722 doi = "10.1063/1.111195",
1723 notes = "beta sic nano crystals in si, mbe, annealing",
1727 author = "Richard A. Soref",
1729 title = "Optical band gap of the ternary semiconductor Si[sub 1
1730 - x - y]Ge[sub x]{C}[sub y]",
1733 journal = "Journal of Applied Physics",
1736 pages = "2470--2472",
1737 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1738 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1740 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1741 doi = "10.1063/1.349403",
1742 notes = "band gap of strained si by c",
1746 author = "E Kasper",
1747 title = "Superlattices of group {IV} elements, a new
1748 possibility to produce direct band gap material",
1749 journal = "Physica Scripta",
1752 URL = "http://stacks.iop.org/1402-4896/T35/232",
1754 notes = "superlattices, convert indirect band gap into a
1759 author = "H. J. Osten and J. Griesche and S. Scalese",
1761 title = "Substitutional carbon incorporation in epitaxial
1762 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1763 molecular beam epitaxy",
1766 journal = "Applied Physics Letters",
1770 keywords = "molecular beam epitaxial growth; semiconductor growth;
1771 wide band gap semiconductors; interstitials; silicon
1773 URL = "http://link.aip.org/link/?APL/74/836/1",
1774 doi = "10.1063/1.123384",
1775 notes = "substitutional c in si",
1778 @Article{hohenberg64,
1779 title = "Inhomogeneous Electron Gas",
1780 author = "P. Hohenberg and W. Kohn",
1781 journal = "Phys. Rev.",
1784 pages = "B864--B871",
1788 doi = "10.1103/PhysRev.136.B864",
1789 publisher = "American Physical Society",
1790 notes = "density functional theory, dft",
1794 title = "Self-Consistent Equations Including Exchange and
1795 Correlation Effects",
1796 author = "W. Kohn and L. J. Sham",
1797 journal = "Phys. Rev.",
1800 pages = "A1133--A1138",
1804 doi = "10.1103/PhysRev.140.A1133",
1805 publisher = "American Physical Society",
1806 notes = "dft, exchange and correlation",
1810 title = "Strain-stabilized highly concentrated pseudomorphic
1811 $Si1-x$$Cx$ layers in Si",
1812 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1814 journal = "Phys. Rev. Lett.",
1817 pages = "3578--3581",
1821 doi = "10.1103/PhysRevLett.72.3578",
1822 publisher = "American Physical Society",
1823 notes = "high c concentration in si, heterostructure, starined
1828 title = "Electron Transport Model for Strained Silicon-Carbon
1830 author = "Shu-Tong Chang and Chung-Yi Lin",
1831 journal = "Japanese Journal of Applied Physics",
1834 pages = "2257--2262",
1837 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1838 doi = "10.1143/JJAP.44.2257",
1839 publisher = "The Japan Society of Applied Physics",
1840 notes = "enhance of electron mobility in starined si",
1844 author = "H. J. Osten and P. Gaworzewski",
1846 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1847 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1851 journal = "Journal of Applied Physics",
1854 pages = "4977--4981",
1855 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1856 semiconductors; semiconductor epitaxial layers; carrier
1857 density; Hall mobility; interstitials; defect states",
1858 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1859 doi = "10.1063/1.366364",
1860 notes = "charge transport in strained si",
1864 title = "Carbon-mediated aggregation of self-interstitials in
1865 silicon: {A} large-scale molecular dynamics study",
1866 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1867 journal = "Phys. Rev. B",
1874 doi = "10.1103/PhysRevB.69.155214",
1875 publisher = "American Physical Society",
1876 notes = "simulation using promising tersoff reparametrization",
1880 title = "Event-Based Relaxation of Continuous Disordered
1882 author = "G. T. Barkema and Normand Mousseau",
1883 journal = "Phys. Rev. Lett.",
1886 pages = "4358--4361",
1890 doi = "10.1103/PhysRevLett.77.4358",
1891 publisher = "American Physical Society",
1892 notes = "activation relaxation technique, art, speed up slow
1897 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1898 Minoukadeh and F. Willaime",
1900 title = "Some improvements of the activation-relaxation
1901 technique method for finding transition pathways on
1902 potential energy surfaces",
1905 journal = "The Journal of Chemical Physics",
1911 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1912 surfaces; vacancies (crystal)",
1913 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1914 doi = "10.1063/1.3088532",
1915 notes = "improvements to art, refs for methods to find
1916 transition pathways",
1919 @Article{parrinello81,
1920 author = "M. Parrinello and A. Rahman",
1922 title = "Polymorphic transitions in single crystals: {A} new
1923 molecular dynamics method",
1926 journal = "Journal of Applied Physics",
1929 pages = "7182--7190",
1930 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1931 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1932 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1933 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1934 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1936 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1937 doi = "10.1063/1.328693",
1940 @Article{stillinger85,
1941 title = "Computer simulation of local order in condensed phases
1943 author = "Frank H. Stillinger and Thomas A. Weber",
1944 journal = "Phys. Rev. B",
1947 pages = "5262--5271",
1951 doi = "10.1103/PhysRevB.31.5262",
1952 publisher = "American Physical Society",
1956 title = "Empirical potential for hydrocarbons for use in
1957 simulating the chemical vapor deposition of diamond
1959 author = "Donald W. Brenner",
1960 journal = "Phys. Rev. B",
1963 pages = "9458--9471",
1967 doi = "10.1103/PhysRevB.42.9458",
1968 publisher = "American Physical Society",
1969 notes = "brenner hydro carbons",
1973 title = "Modeling of Covalent Bonding in Solids by Inversion of
1974 Cohesive Energy Curves",
1975 author = "Martin Z. Bazant and Efthimios Kaxiras",
1976 journal = "Phys. Rev. Lett.",
1979 pages = "4370--4373",
1983 doi = "10.1103/PhysRevLett.77.4370",
1984 publisher = "American Physical Society",
1985 notes = "first si edip",
1989 title = "Environment-dependent interatomic potential for bulk
1991 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1993 journal = "Phys. Rev. B",
1996 pages = "8542--8552",
2000 doi = "10.1103/PhysRevB.56.8542",
2001 publisher = "American Physical Society",
2002 notes = "second si edip",
2006 title = "Interatomic potential for silicon defects and
2008 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2009 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2010 journal = "Phys. Rev. B",
2013 pages = "2539--2550",
2017 doi = "10.1103/PhysRevB.58.2539",
2018 publisher = "American Physical Society",
2019 notes = "latest si edip, good dislocation explanation",
2023 title = "{PARCAS} molecular dynamics code",
2024 author = "K. Nordlund",
2029 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2031 author = "Arthur F. Voter",
2032 journal = "Phys. Rev. Lett.",
2035 pages = "3908--3911",
2039 doi = "10.1103/PhysRevLett.78.3908",
2040 publisher = "American Physical Society",
2041 notes = "hyperdynamics, accelerated md",
2045 author = "Arthur F. Voter",
2047 title = "A method for accelerating the molecular dynamics
2048 simulation of infrequent events",
2051 journal = "The Journal of Chemical Physics",
2054 pages = "4665--4677",
2055 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2056 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2057 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2058 energy functions; surface diffusion; reaction kinetics
2059 theory; potential energy surfaces",
2060 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2061 doi = "10.1063/1.473503",
2062 notes = "improved hyperdynamics md",
2065 @Article{sorensen2000,
2066 author = "Mads R. S\o rensen and Arthur F. Voter",
2068 title = "Temperature-accelerated dynamics for simulation of
2072 journal = "The Journal of Chemical Physics",
2075 pages = "9599--9606",
2076 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2077 MOLECULAR DYNAMICS METHOD; surface diffusion",
2078 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2079 doi = "10.1063/1.481576",
2080 notes = "temperature accelerated dynamics, tad",
2084 title = "Parallel replica method for dynamics of infrequent
2086 author = "Arthur F. Voter",
2087 journal = "Phys. Rev. B",
2090 pages = "R13985--R13988",
2094 doi = "10.1103/PhysRevB.57.R13985",
2095 publisher = "American Physical Society",
2096 notes = "parallel replica method, accelerated md",
2100 author = "Xiongwu Wu and Shaomeng Wang",
2102 title = "Enhancing systematic motion in molecular dynamics
2106 journal = "The Journal of Chemical Physics",
2109 pages = "9401--9410",
2110 keywords = "molecular dynamics method; argon; Lennard-Jones
2111 potential; crystallisation; liquid theory",
2112 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2113 doi = "10.1063/1.478948",
2114 notes = "self guided md, sgmd, accelerated md, enhancing
2118 @Article{choudhary05,
2119 author = "Devashish Choudhary and Paulette Clancy",
2121 title = "Application of accelerated molecular dynamics schemes
2122 to the production of amorphous silicon",
2125 journal = "The Journal of Chemical Physics",
2131 keywords = "molecular dynamics method; silicon; glass structure;
2132 amorphous semiconductors",
2133 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2134 doi = "10.1063/1.1878733",
2135 notes = "explanation of sgmd and hyper md, applied to amorphous
2140 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2142 title = "Carbon precipitation in silicon: Why is it so
2146 journal = "Applied Physics Letters",
2149 pages = "3336--3338",
2150 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2151 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2153 URL = "http://link.aip.org/link/?APL/62/3336/1",
2154 doi = "10.1063/1.109063",
2155 notes = "interfacial energy of cubic sic and si",
2158 @Article{chaussende08,
2159 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2160 journal = "Journal of Crystal Growth",
2165 note = "Proceedings of the E-MRS Conference, Symposium G -
2166 Substrates of Wide Bandgap Materials",
2168 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2169 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2170 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2171 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2172 and A. Andreadou and E. K. Polychroniadis and C.
2173 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2174 notes = "3c-sic crystal growth, sic fabrication + links,
2179 title = "Forces in Molecules",
2180 author = "R. P. Feynman",
2181 journal = "Phys. Rev.",
2188 doi = "10.1103/PhysRev.56.340",
2189 publisher = "American Physical Society",
2190 notes = "hellmann feynman forces",
2194 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2195 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2196 their Contrasting Properties",
2197 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2199 journal = "Phys. Rev. Lett.",
2206 doi = "10.1103/PhysRevLett.84.943",
2207 publisher = "American Physical Society",
2208 notes = "si sio2 and sic sio2 interface",
2211 @Article{djurabekova08,
2212 title = "Atomistic simulation of the interface structure of Si
2213 nanocrystals embedded in amorphous silica",
2214 author = "Flyura Djurabekova and Kai Nordlund",
2215 journal = "Phys. Rev. B",
2222 doi = "10.1103/PhysRevB.77.115325",
2223 publisher = "American Physical Society",
2224 notes = "nc-si in sio2, interface energy, nc construction,
2225 angular distribution, coordination",
2229 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2230 W. Liang and J. Zou",
2232 title = "Nature of interfacial defects and their roles in
2233 strain relaxation at highly lattice mismatched
2234 3{C}-Si{C}/Si (001) interface",
2237 journal = "Journal of Applied Physics",
2243 keywords = "anelastic relaxation; crystal structure; dislocations;
2244 elemental semiconductors; semiconductor growth;
2245 semiconductor thin films; silicon; silicon compounds;
2246 stacking faults; wide band gap semiconductors",
2247 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2248 doi = "10.1063/1.3234380",
2249 notes = "sic/si interface, follow refs, tem image
2250 deconvolution, dislocation defects",
2253 @Article{kitabatake93,
2254 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2257 title = "Simulations and experiments of Si{C} heteroepitaxial
2258 growth on Si(001) surface",
2261 journal = "Journal of Applied Physics",
2264 pages = "4438--4445",
2265 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2266 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2267 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2268 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2269 doi = "10.1063/1.354385",
2270 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2275 title = "Strain relaxation and thermal stability of the
2276 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2278 journal = "Thin Solid Films",
2285 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2286 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2287 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2288 keywords = "Strain relaxation",
2289 keywords = "Interfaces",
2290 keywords = "Thermal stability",
2291 keywords = "Molecular dynamics",
2292 notes = "tersoff sic/si interface study",
2296 title = "Ab initio Study of Misfit Dislocations at the
2297 $Si{C}/Si(001)$ Interface",
2298 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2300 journal = "Phys. Rev. Lett.",
2307 doi = "10.1103/PhysRevLett.89.156101",
2308 publisher = "American Physical Society",
2309 notes = "sic/si interface study",
2312 @Article{pizzagalli03,
2313 title = "Theoretical investigations of a highly mismatched
2314 interface: Si{C}/Si(001)",
2315 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2317 journal = "Phys. Rev. B",
2324 doi = "10.1103/PhysRevB.68.195302",
2325 publisher = "American Physical Society",
2326 notes = "tersoff md and ab initio sic/si interface study",
2330 title = "Atomic configurations of dislocation core and twin
2331 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2332 electron microscopy",
2333 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2334 H. Zheng and J. W. Liang",
2335 journal = "Phys. Rev. B",
2342 doi = "10.1103/PhysRevB.75.184103",
2343 publisher = "American Physical Society",
2344 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2348 @Article{hornstra58,
2349 title = "Dislocations in the diamond lattice",
2350 journal = "Journal of Physics and Chemistry of Solids",
2357 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2358 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2359 author = "J. Hornstra",
2360 notes = "dislocations in diamond lattice",
2363 @Article{eichhorn99,
2364 author = "F. Eichhorn and N. Schell and W. Matz and R.
2367 title = "Strain and Si{C} particle formation in silicon
2368 implanted with carbon ions of medium fluence studied by
2369 synchrotron x-ray diffraction",
2372 journal = "Journal of Applied Physics",
2375 pages = "4184--4187",
2376 keywords = "silicon; carbon; elemental semiconductors; chemical
2377 interdiffusion; ion implantation; X-ray diffraction;
2378 precipitation; semiconductor doping",
2379 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2380 doi = "10.1063/1.371344",
2381 notes = "sic conversion by ibs, detected substitutional carbon,
2382 expansion of si lattice",
2385 @Article{eichhorn02,
2386 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2387 Metzger and W. Matz and R. K{\"{o}}gler",
2389 title = "Structural relation between Si and Si{C} formed by
2390 carbon ion implantation",
2393 journal = "Journal of Applied Physics",
2396 pages = "1287--1292",
2397 keywords = "silicon compounds; wide band gap semiconductors; ion
2398 implantation; annealing; X-ray scattering; transmission
2399 electron microscopy",
2400 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2401 doi = "10.1063/1.1428105",
2402 notes = "3c-sic alignement to si host in ibs depending on
2403 temperature, might explain c int to c sub trafo",
2407 author = "G Lucas and M Bertolus and L Pizzagalli",
2408 title = "An environment-dependent interatomic potential for
2409 silicon carbide: calculation of bulk properties,
2410 high-pressure phases, point and extended defects, and
2411 amorphous structures",
2412 journal = "Journal of Physics: Condensed Matter",
2416 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2422 author = "J Godet and L Pizzagalli and S Brochard and P
2424 title = "Comparison between classical potentials and ab initio
2425 methods for silicon under large shear",
2426 journal = "Journal of Physics: Condensed Matter",
2430 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2432 notes = "comparison of empirical potentials, stillinger weber,
2433 edip, tersoff, ab initio",
2436 @Article{moriguchi98,
2437 title = "Verification of Tersoff's Potential for Static
2438 Structural Analysis of Solids of Group-{IV} Elements",
2439 author = "Koji Moriguchi and Akira Shintani",
2440 journal = "Japanese Journal of Applied Physics",
2442 number = "Part 1, No. 2",
2446 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2447 doi = "10.1143/JJAP.37.414",
2448 publisher = "The Japan Society of Applied Physics",
2449 notes = "tersoff stringent test",
2452 @Article{mazzarolo01,
2453 title = "Low-energy recoils in crystalline silicon: Quantum
2455 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2456 Lulli and Eros Albertazzi",
2457 journal = "Phys. Rev. B",
2464 doi = "10.1103/PhysRevB.63.195207",
2465 publisher = "American Physical Society",
2468 @Article{holmstroem08,
2469 title = "Threshold defect production in silicon determined by
2470 density functional theory molecular dynamics
2472 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2473 journal = "Phys. Rev. B",
2480 doi = "10.1103/PhysRevB.78.045202",
2481 publisher = "American Physical Society",
2482 notes = "threshold displacement comparison empirical and ab
2486 @Article{nordlund97,
2487 title = "Repulsive interatomic potentials calculated using
2488 Hartree-Fock and density-functional theory methods",
2489 journal = "Nuclear Instruments and Methods in Physics Research
2490 Section B: Beam Interactions with Materials and Atoms",
2497 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2498 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2499 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2500 notes = "repulsive ab initio potential",
2504 title = "Efficiency of ab-initio total energy calculations for
2505 metals and semiconductors using a plane-wave basis
2507 journal = "Computational Materials Science",
2514 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2515 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2516 author = "G. Kresse and J. Furthm{\"{u}}ller",
2521 title = "Projector augmented-wave method",
2522 author = "P. E. Bl{\"o}chl",
2523 journal = "Phys. Rev. B",
2526 pages = "17953--17979",
2530 doi = "10.1103/PhysRevB.50.17953",
2531 publisher = "American Physical Society",
2532 notes = "paw method",
2536 title = "Norm-Conserving Pseudopotentials",
2537 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2538 journal = "Phys. Rev. Lett.",
2541 pages = "1494--1497",
2545 doi = "10.1103/PhysRevLett.43.1494",
2546 publisher = "American Physical Society",
2547 notes = "norm-conserving pseudopotentials",
2550 @Article{vanderbilt90,
2551 title = "Soft self-consistent pseudopotentials in a generalized
2552 eigenvalue formalism",
2553 author = "David Vanderbilt",
2554 journal = "Phys. Rev. B",
2557 pages = "7892--7895",
2561 doi = "10.1103/PhysRevB.41.7892",
2562 publisher = "American Physical Society",
2563 notes = "vasp pseudopotentials",
2567 title = "Accurate and simple density functional for the
2568 electronic exchange energy: Generalized gradient
2570 author = "John P. Perdew and Wang Yue",
2571 journal = "Phys. Rev. B",
2574 pages = "8800--8802",
2578 doi = "10.1103/PhysRevB.33.8800",
2579 publisher = "American Physical Society",
2580 notes = "rapid communication gga",
2584 title = "Generalized gradient approximations for exchange and
2585 correlation: {A} look backward and forward",
2586 journal = "Physica B: Condensed Matter",
2593 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2594 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2595 author = "John P. Perdew",
2596 notes = "gga overview",
2600 title = "Atoms, molecules, solids, and surfaces: Applications
2601 of the generalized gradient approximation for exchange
2603 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2604 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2605 and Carlos Fiolhais",
2606 journal = "Phys. Rev. B",
2609 pages = "6671--6687",
2613 doi = "10.1103/PhysRevB.46.6671",
2614 publisher = "American Physical Society",
2615 notes = "gga pw91 (as in vasp)",
2618 @Article{baldereschi73,
2619 title = "Mean-Value Point in the Brillouin Zone",
2620 author = "A. Baldereschi",
2621 journal = "Phys. Rev. B",
2624 pages = "5212--5215",
2628 doi = "10.1103/PhysRevB.7.5212",
2629 publisher = "American Physical Society",
2630 notes = "mean value k point",
2634 title = "Ab initio pseudopotential calculations of dopant
2636 journal = "Computational Materials Science",
2643 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2644 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2645 author = "Jing Zhu",
2646 keywords = "TED (transient enhanced diffusion)",
2647 keywords = "Boron dopant",
2648 keywords = "Carbon dopant",
2649 keywords = "Defect",
2650 keywords = "ab initio pseudopotential method",
2651 keywords = "Impurity cluster",
2652 notes = "binding of c to si interstitial, c in si defects",
2656 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2658 title = "Si{C} buried layer formation by ion beam synthesis at
2662 journal = "Applied Physics Letters",
2665 pages = "2646--2648",
2666 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2667 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2668 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2669 ELECTRON MICROSCOPY",
2670 URL = "http://link.aip.org/link/?APL/66/2646/1",
2671 doi = "10.1063/1.113112",
2672 notes = "precipitation mechanism by substitutional carbon, si
2673 self interstitials react with further implanted c",
2677 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2678 Kolodzey and A. Hairie",
2680 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2684 journal = "Journal of Applied Physics",
2687 pages = "4631--4633",
2688 keywords = "silicon compounds; precipitation; localised modes;
2689 semiconductor epitaxial layers; infrared spectra;
2690 Fourier transform spectra; thermal stability;
2692 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2693 doi = "10.1063/1.368703",
2694 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2698 author = "R Jones and B J Coomer and P R Briddon",
2699 title = "Quantum mechanical modelling of defects in
2701 journal = "Journal of Physics: Condensed Matter",
2705 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2707 notes = "ab inito init, vibrational modes, c defect in si",
2711 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2712 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2713 J. E. Greene and S. G. Bishop",
2715 title = "Carbon incorporation pathways and lattice sites in
2716 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2717 molecular-beam epitaxy",
2720 journal = "Journal of Applied Physics",
2723 pages = "5716--5727",
2724 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2725 doi = "10.1063/1.1465122",
2726 notes = "c substitutional incorporation pathway, dft and expt",
2730 title = "Dynamic properties of interstitial carbon and
2731 carbon-carbon pair defects in silicon",
2732 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2734 journal = "Phys. Rev. B",
2737 pages = "2188--2194",
2741 doi = "10.1103/PhysRevB.55.2188",
2742 publisher = "American Physical Society",
2743 notes = "ab initio c in si and di-carbon defect, no formation
2744 energies, different migration barriers and paths",
2748 title = "Interstitial carbon and the carbon-carbon pair in
2749 silicon: Semiempirical electronic-structure
2751 author = "Matthew J. Burnard and Gary G. DeLeo",
2752 journal = "Phys. Rev. B",
2755 pages = "10217--10225",
2759 doi = "10.1103/PhysRevB.47.10217",
2760 publisher = "American Physical Society",
2761 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
2762 carbon defect, formation energies",
2766 title = "Review of atomistic simulations of surface diffusion
2767 and growth on semiconductors",
2768 journal = "Computational Materials Science",
2773 note = "Proceedings of the Workshop on Virtual Molecular Beam
2776 doi = "DOI: 10.1016/0927-0256(96)00030-4",
2777 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
2778 author = "Efthimios Kaxiras",
2779 notes = "might contain c 100 db formation energy, overview md,
2780 tight binding, first principles",
2783 @Article{kaukonen98,
2784 title = "Effect of {N} and {B} doping on the growth of {CVD}
2786 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
2788 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
2789 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
2791 journal = "Phys. Rev. B",
2794 pages = "9965--9970",
2798 doi = "10.1103/PhysRevB.57.9965",
2799 publisher = "American Physical Society",
2800 notes = "constrained conjugate gradient relaxation technique
2805 title = "Correlation between the antisite pair and the ${DI}$
2807 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
2808 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
2810 journal = "Phys. Rev. B",
2817 doi = "10.1103/PhysRevB.67.155203",
2818 publisher = "American Physical Society",
2822 title = "Production and recovery of defects in Si{C} after
2823 irradiation and deformation",
2824 journal = "Journal of Nuclear Materials",
2827 pages = "1803--1808",
2831 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
2832 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
2833 author = "J. Chen and P. Jung and H. Klein",
2837 title = "Accumulation, dynamic annealing and thermal recovery
2838 of ion-beam-induced disorder in silicon carbide",
2839 journal = "Nuclear Instruments and Methods in Physics Research
2840 Section B: Beam Interactions with Materials and Atoms",
2847 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
2848 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
2849 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
2850 keywords = "Amorphization",
2851 keywords = "Irradiation effects",
2852 keywords = "Thermal recovery",
2853 keywords = "Silicon carbide",
2856 @Article{bockstedte03,
2857 title = "Ab initio study of the migration of intrinsic defects
2859 author = "Michel Bockstedte and Alexander Mattausch and Oleg
2861 journal = "Phys. Rev. B",
2868 doi = "10.1103/PhysRevB.68.205201",
2869 publisher = "American Physical Society",
2870 notes = "defect migration in sic",
2874 title = "Theoretical study of vacancy diffusion and
2875 vacancy-assisted clustering of antisites in Si{C}",
2876 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
2878 journal = "Phys. Rev. B",
2885 doi = "10.1103/PhysRevB.68.155208",
2886 publisher = "American Physical Society",