2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Comparative study of silicon empirical interatomic
102 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
103 journal = "Phys. Rev. B",
106 pages = "2250--2279",
110 doi = "10.1103/PhysRevB.46.2250",
111 publisher = "American Physical Society",
112 notes = "comparison of classical potentials for si",
116 title = "Stress relaxation in $a-Si$ induced by ion
118 author = "H. M. Urbassek M. Koster",
119 journal = "Phys. Rev. B",
122 pages = "11219--11224",
126 doi = "10.1103/PhysRevB.62.11219",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
131 @Article{breadmore99,
132 title = "Direct simulation of ion-beam-induced stressing and
133 amorphization of silicon",
134 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
135 journal = "Phys. Rev. B",
138 pages = "12610--12616",
142 doi = "10.1103/PhysRevB.60.12610",
143 publisher = "American Physical Society",
144 notes = "virial derivation for 3-body tersoff potential",
148 author = "Henri Moissan",
149 title = "Nouvelles recherches sur la météorité de Cañon
151 journal = "Comptes rendus de l'Académie des Sciences",
158 author = "Y. S. Park",
159 title = "Si{C} Materials and Devices",
160 publisher = "Academic Press",
161 address = "San Diego",
166 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
167 Calvin H. Carter Jr. and D. Asbury",
168 title = "Si{C} Seeded Boule Growth",
169 journal = "Materials Science Forum",
173 notes = "modified lely process, micropipes",
177 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
178 Thermodynamical Properties of Lennard-Jones Molecules",
179 author = "Loup Verlet",
180 journal = "Phys. Rev.",
186 doi = "10.1103/PhysRev.159.98",
187 publisher = "American Physical Society",
188 notes = "velocity verlet integration algorithm equation of
192 @Article{berendsen84,
193 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
194 Gunsteren and A. DiNola and J. R. Haak",
196 title = "Molecular dynamics with coupling to an external bath",
199 journal = "The Journal of Chemical Physics",
202 pages = "3684--3690",
203 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
204 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
205 URL = "http://link.aip.org/link/?JCP/81/3684/1",
206 doi = "10.1063/1.448118",
207 notes = "berendsen thermostat barostat",
211 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
213 title = "Molecular dynamics determination of defect energetics
214 in beta -Si{C} using three representative empirical
216 journal = "Modelling and Simulation in Materials Science and
221 URL = "http://stacks.iop.org/0965-0393/3/615",
222 notes = "comparison of tersoff, pearson and eam for defect
223 energetics in sic; (m)eam parameters for sic",
228 title = "Relationship between the embedded-atom method and
230 author = "Donald W. Brenner",
231 journal = "Phys. Rev. Lett.",
238 doi = "10.1103/PhysRevLett.63.1022",
239 publisher = "American Physical Society",
240 notes = "relation of tersoff and eam potential",
244 title = "Molecular-dynamics study of self-interstitials in
246 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
247 journal = "Phys. Rev. B",
250 pages = "9552--9558",
254 doi = "10.1103/PhysRevB.35.9552",
255 publisher = "American Physical Society",
256 notes = "selft-interstitials in silicon, stillinger-weber,
257 calculation of defect formation energy, defect
262 title = "Extended interstitials in silicon and germanium",
263 author = "H. R. Schober",
264 journal = "Phys. Rev. B",
267 pages = "13013--13015",
271 doi = "10.1103/PhysRevB.39.13013",
272 publisher = "American Physical Society",
273 notes = "stillinger-weber silicon 110 stable and metastable
274 dumbbell configuration",
278 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
279 Defect accumulation, topological features, and
281 author = "F. Gao and W. J. Weber",
282 journal = "Phys. Rev. B",
289 doi = "10.1103/PhysRevB.66.024106",
290 publisher = "American Physical Society",
291 notes = "sic intro, si cascade in 3c-sic, amorphization,
292 tersoff modified, pair correlation of amorphous sic, md
296 @Article{devanathan98,
297 title = "Computer simulation of a 10 ke{V} Si displacement
299 journal = "Nuclear Instruments and Methods in Physics Research
300 Section B: Beam Interactions with Materials and Atoms",
306 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
307 author = "R. Devanathan and W. J. Weber and T. Diaz de la
309 notes = "modified tersoff short range potential, ab initio
313 @Article{devanathan98_2,
314 title = "Displacement threshold energies in [beta]-Si{C}",
315 journal = "Journal of Nuclear Materials",
321 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
322 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
324 notes = "modified tersoff, ab initio, combined ab initio
329 title = "Si{C}/Si heteroepitaxial growth",
330 author = "M. Kitabatake",
331 journal = "Thin Solid Films",
336 notes = "md simulation, sic si heteroepitaxy, mbe",
340 title = "Intrinsic point defects in crystalline silicon:
341 Tight-binding molecular dynamics studies of
342 self-diffusion, interstitial-vacancy recombination, and
344 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
346 journal = "Phys. Rev. B",
349 pages = "14279--14289",
353 doi = "10.1103/PhysRevB.55.14279",
354 publisher = "American Physical Society",
355 notes = "si self interstitial, diffusion, tbmd",
359 title = "Tight-binding theory of native point defects in
361 author = "L. Colombo",
362 journal = "Annu. Rev. Mater. Res.",
367 doi = "10.1146/annurev.matsci.32.111601.103036",
368 publisher = "Annual Reviews",
369 notes = "si self interstitial, tbmd, virial stress",
372 @Article{al-mushadani03,
373 title = "Free-energy calculations of intrinsic point defects in
375 author = "O. K. Al-Mushadani and R. J. Needs",
376 journal = "Phys. Rev. B",
383 doi = "10.1103/PhysRevB.68.235205",
384 publisher = "American Physical Society",
385 notes = "formation energies of intrinisc point defects in
386 silicon, si self interstitials",
390 title = "Ab initio study of self-diffusion in silicon over a
391 wide temperature range: Point defect states and
392 migration mechanisms",
393 author = "Shangyi Ma and Shaoqing Wang",
394 journal = "Phys. Rev. B",
401 doi = "10.1103/PhysRevB.81.193203",
402 publisher = "American Physical Society",
403 notes = "si self interstitial diffusion + refs",
407 title = "Ab initio and empirical-potential studies of defect
408 properties in $3{C}-Si{C}$",
409 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
411 journal = "Phys. Rev. B",
418 doi = "10.1103/PhysRevB.64.245208",
419 publisher = "American Physical Society",
420 notes = "defects in 3c-sic",
423 @Article{mattoni2002,
424 title = "Self-interstitial trapping by carbon complexes in
425 crystalline silicon",
426 author = "A. Mattoni and F. Bernardini and L. Colombo",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.195214",
435 publisher = "American Physical Society",
436 notes = "c in c-si, diffusion, interstitial configuration +
437 links, interaction of carbon and silicon
442 title = "Calculations of Silicon Self-Interstitial Defects",
443 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
445 journal = "Phys. Rev. Lett.",
448 pages = "2351--2354",
452 doi = "10.1103/PhysRevLett.83.2351",
453 publisher = "American Physical Society",
454 notes = "nice images of the defects, si defect overview +
459 title = "Identification of the migration path of interstitial
461 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
462 journal = "Phys. Rev. B",
465 pages = "7439--7442",
469 doi = "10.1103/PhysRevB.50.7439",
470 publisher = "American Physical Society",
471 notes = "carbon interstitial migration path shown, 001 c-si
476 title = "Ab initio investigation of carbon-related defects in
478 author = "A. Dal Pino and Andrew M. Rappe and J. D.
480 journal = "Phys. Rev. B",
483 pages = "12554--12557",
487 doi = "10.1103/PhysRevB.47.12554",
488 publisher = "American Physical Society",
489 notes = "c interstitials in crystalline silicon",
493 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
495 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
496 Sokrates T. Pantelides",
497 journal = "Phys. Rev. Lett.",
500 pages = "1814--1817",
504 doi = "10.1103/PhysRevLett.52.1814",
505 publisher = "American Physical Society",
506 notes = "microscopic theory diffusion silicon dft migration
511 title = "Short-range order, bulk moduli, and physical trends in
512 c-$Si1-x$$Cx$ alloys",
513 author = "P. C. Kelires",
514 journal = "Phys. Rev. B",
517 pages = "8784--8787",
521 doi = "10.1103/PhysRevB.55.8784",
522 publisher = "American Physical Society",
523 notes = "c strained si, montecarlo md, bulk moduli, next
528 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
529 Application to the $Si1-x-yGexCy$ System",
530 author = "P. C. Kelires",
531 journal = "Phys. Rev. Lett.",
534 pages = "1114--1117",
538 doi = "10.1103/PhysRevLett.75.1114",
539 publisher = "American Physical Society",
540 notes = "mc md, strain compensation in si ge by c insertion",
544 title = "Low temperature electron irradiation of silicon
546 journal = "Solid State Communications",
553 doi = "DOI: 10.1016/0038-1098(70)90074-8",
554 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
555 author = "A. R. Bean and R. C. Newman",
559 title = "{EPR} Observation of the Isolated Interstitial Carbon
561 author = "G. D. Watkins and K. L. Brower",
562 journal = "Phys. Rev. Lett.",
565 pages = "1329--1332",
569 doi = "10.1103/PhysRevLett.36.1329",
570 publisher = "American Physical Society",
571 notes = "epr observations of 100 interstitial carbon atom in
576 title = "{EPR} identification of the single-acceptor state of
577 interstitial carbon in silicon",
578 author = "G. D. Watkins L. W. Song",
579 journal = "Phys. Rev. B",
582 pages = "5759--5764",
586 doi = "10.1103/PhysRevB.42.5759",
587 publisher = "American Physical Society",
588 notes = "carbon diffusion in silicon",
592 author = "A K Tipping and R C Newman",
593 title = "The diffusion coefficient of interstitial carbon in
595 journal = "Semiconductor Science and Technology",
599 URL = "http://stacks.iop.org/0268-1242/2/315",
601 notes = "diffusion coefficient of carbon interstitials in
606 title = "Carbon incorporation into Si at high concentrations by
607 ion implantation and solid phase epitaxy",
608 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
609 Picraux and J. K. Watanabe and J. W. Mayer",
610 journal = "J. Appl. Phys.",
615 doi = "10.1063/1.360806",
616 notes = "strained silicon, carbon supersaturation",
619 @Article{laveant2002,
620 title = "Epitaxy of carbon-rich silicon with {MBE}",
621 author = "P. Laveant and G. Gerth and P. Werner and U.
623 journal = "Materials Science and Engineering B",
627 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
628 notes = "low c in si, tensile stress to compensate compressive
629 stress, avoid sic precipitation",
633 author = "P. Werner and S. Eichler and G. Mariani and R.
634 K{\"{o}}gler and W. Skorupa",
635 title = "Investigation of {C}[sub x]Si defects in {C} implanted
636 silicon by transmission electron microscopy",
639 journal = "Applied Physics Letters",
643 keywords = "silicon; ion implantation; carbon; crystal defects;
644 transmission electron microscopy; annealing; positron
645 annihilation; secondary ion mass spectroscopy; buried
646 layers; precipitation",
647 URL = "http://link.aip.org/link/?APL/70/252/1",
648 doi = "10.1063/1.118381",
649 notes = "si-c complexes, agglomerate, sic in si matrix, sic
654 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
655 Picraux and J. K. Watanabe and J. W. Mayer",
657 title = "Precipitation and relaxation in strained Si[sub 1 -
658 y]{C}[sub y]/Si heterostructures",
661 journal = "Journal of Applied Physics",
664 pages = "3656--3668",
665 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
666 URL = "http://link.aip.org/link/?JAP/76/3656/1",
667 doi = "10.1063/1.357429",
668 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
672 title = "Prospects for device implementation of wide band gap
674 author = "J. H. Edgar",
675 journal = "J. Mater. Res.",
680 doi = "10.1557/JMR.1992.0235",
681 notes = "properties wide band gap semiconductor, sic
685 @Article{zirkelbach2007,
686 title = "Monte Carlo simulation study of a selforganisation
687 process leading to ordered precipitate structures",
688 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
690 journal = "Nucl. Instr. and Meth. B",
697 doi = "doi:10.1016/j.nimb.2006.12.118",
698 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
702 @Article{zirkelbach2006,
703 title = "Monte-Carlo simulation study of the self-organization
704 of nanometric amorphous precipitates in regular arrays
705 during ion irradiation",
706 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
708 journal = "Nucl. Instr. and Meth. B",
715 doi = "doi:10.1016/j.nimb.2005.08.162",
716 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
720 @Article{zirkelbach2005,
721 title = "Modelling of a selforganization process leading to
722 periodic arrays of nanometric amorphous precipitates by
724 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
726 journal = "Comp. Mater. Sci.",
733 doi = "doi:10.1016/j.commatsci.2004.12.016",
734 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
739 title = "Controlling the density distribution of Si{C}
740 nanocrystals for the ion beam synthesis of buried Si{C}
742 journal = "Nuclear Instruments and Methods in Physics Research
743 Section B: Beam Interactions with Materials and Atoms",
750 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
751 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
752 author = "J. K. N. Lindner and B. Stritzker",
753 notes = "two-step implantation process",
756 @Article{lindner99_2,
757 title = "Mechanisms in the ion beam synthesis of Si{C} layers
759 journal = "Nuclear Instruments and Methods in Physics Research
760 Section B: Beam Interactions with Materials and Atoms",
767 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
768 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
769 author = "J. K. N. Lindner and B. Stritzker",
773 title = "Ion beam synthesis of buried Si{C} layers in silicon:
774 Basic physical processes",
775 journal = "Nuclear Instruments and Methods in Physics Research
776 Section B: Beam Interactions with Materials and Atoms",
783 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
784 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
785 author = "Jörg K. N. Lindner",
789 title = "High-dose carbon implantations into silicon:
790 fundamental studies for new technological tricks",
791 author = "J. K. N. Lindner",
792 journal = "Appl. Phys. A",
796 doi = "10.1007/s00339-002-2062-8",
797 notes = "ibs, burried sic layers",
801 author = "B. J. Alder and T. E. Wainwright",
802 title = "Phase Transition for a Hard Sphere System",
805 journal = "The Journal of Chemical Physics",
808 pages = "1208--1209",
809 URL = "http://link.aip.org/link/?JCP/27/1208/1",
810 doi = "10.1063/1.1743957",
814 author = "B. J. Alder and T. E. Wainwright",
815 title = "Studies in Molecular Dynamics. {I}. General Method",
818 journal = "The Journal of Chemical Physics",
822 URL = "http://link.aip.org/link/?JCP/31/459/1",
823 doi = "10.1063/1.1730376",
826 @Article{tersoff_si1,
827 title = "New empirical model for the structural properties of
829 author = "J. Tersoff",
830 journal = "Phys. Rev. Lett.",
837 doi = "10.1103/PhysRevLett.56.632",
838 publisher = "American Physical Society",
841 @Article{tersoff_si2,
842 title = "New empirical approach for the structure and energy of
844 author = "J. Tersoff",
845 journal = "Phys. Rev. B",
848 pages = "6991--7000",
852 doi = "10.1103/PhysRevB.37.6991",
853 publisher = "American Physical Society",
856 @Article{tersoff_si3,
857 title = "Empirical interatomic potential for silicon with
858 improved elastic properties",
859 author = "J. Tersoff",
860 journal = "Phys. Rev. B",
863 pages = "9902--9905",
867 doi = "10.1103/PhysRevB.38.9902",
868 publisher = "American Physical Society",
872 title = "Empirical Interatomic Potential for Carbon, with
873 Applications to Amorphous Carbon",
874 author = "J. Tersoff",
875 journal = "Phys. Rev. Lett.",
878 pages = "2879--2882",
882 doi = "10.1103/PhysRevLett.61.2879",
883 publisher = "American Physical Society",
887 title = "Modeling solid-state chemistry: Interatomic potentials
888 for multicomponent systems",
889 author = "J. Tersoff",
890 journal = "Phys. Rev. B",
893 pages = "5566--5568",
897 doi = "10.1103/PhysRevB.39.5566",
898 publisher = "American Physical Society",
902 title = "Carbon defects and defect reactions in silicon",
903 author = "J. Tersoff",
904 journal = "Phys. Rev. Lett.",
907 pages = "1757--1760",
911 doi = "10.1103/PhysRevLett.64.1757",
912 publisher = "American Physical Society",
916 title = "Point defects and dopant diffusion in silicon",
917 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
918 journal = "Rev. Mod. Phys.",
925 doi = "10.1103/RevModPhys.61.289",
926 publisher = "American Physical Society",
930 title = "Silicon carbide: synthesis and processing",
931 journal = "Nuclear Instruments and Methods in Physics Research
932 Section B: Beam Interactions with Materials and Atoms",
937 note = "Radiation Effects in Insulators",
939 doi = "DOI: 10.1016/0168-583X(96)00065-1",
940 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
945 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
946 Lin and B. Sverdlov and M. Burns",
948 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
949 ZnSe-based semiconductor device technologies",
952 journal = "Journal of Applied Physics",
955 pages = "1363--1398",
956 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
957 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
958 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
960 URL = "http://link.aip.org/link/?JAP/76/1363/1",
961 doi = "10.1063/1.358463",
965 author = "Noch Unbekannt",
966 title = "How to find references",
967 journal = "Journal of Applied References",
974 title = "Atomistic simulation of thermomechanical properties of
976 author = "Meijie Tang and Sidney Yip",
977 journal = "Phys. Rev. B",
980 pages = "15150--15159",
983 doi = "10.1103/PhysRevB.52.15150",
984 notes = "modified tersoff, scale cutoff with volume, promising
985 tersoff reparametrization",
986 publisher = "American Physical Society",
990 title = "Silicon carbide as a new {MEMS} technology",
991 journal = "Sensors and Actuators A: Physical",
997 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
998 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
999 author = "Pasqualina M. Sarro",
1001 keywords = "Silicon carbide",
1002 keywords = "Micromachining",
1003 keywords = "Mechanical stress",
1007 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1008 semiconductor for high-temperature applications: {A}
1010 journal = "Solid-State Electronics",
1013 pages = "1409--1422",
1016 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1017 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1018 author = "J. B. Casady and R. W. Johnson",
1021 @Article{giancarli98,
1022 title = "Design requirements for Si{C}/Si{C} composites
1023 structural material in fusion power reactor blankets",
1024 journal = "Fusion Engineering and Design",
1030 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1031 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1032 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1033 Marois and N. B. Morley and J. F. Salavy",
1037 title = "Electrical and optical characterization of Si{C}",
1038 journal = "Physica B: Condensed Matter",
1044 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1045 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1046 author = "G. Pensl and W. J. Choyke",
1050 title = "Investigation of growth processes of ingots of silicon
1051 carbide single crystals",
1052 journal = "Journal of Crystal Growth",
1057 notes = "modifief lely process",
1059 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1060 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1061 author = "Yu. M. Tairov and V. F. Tsvetkov",
1065 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1068 title = "Production of large-area single-crystal wafers of
1069 cubic Si{C} for semiconductor devices",
1072 journal = "Applied Physics Letters",
1076 keywords = "silicon carbides; layers; chemical vapor deposition;
1078 URL = "http://link.aip.org/link/?APL/42/460/1",
1079 doi = "10.1063/1.93970",
1080 notes = "cvd of 3c-sic on si, first time carbonization, sic
1085 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1087 title = "Growth and Characterization of Cubic Si{C}
1088 Single-Crystal Films on Si",
1091 journal = "Journal of The Electrochemical Society",
1094 pages = "1558--1565",
1095 keywords = "semiconductor materials; silicon compounds; carbon
1096 compounds; crystal morphology; electron mobility",
1097 URL = "http://link.aip.org/link/?JES/134/1558/1",
1098 doi = "10.1149/1.2100708",
1099 notes = "blue light emitting diodes (led)",
1103 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1104 and Hiroyuki Matsunami",
1105 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1109 journal = "Journal of Applied Physics",
1113 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1114 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1116 URL = "http://link.aip.org/link/?JAP/73/726/1",
1117 doi = "10.1063/1.353329",
1118 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1122 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1123 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1124 Yoganathan and J. Yang and P. Pirouz",
1126 title = "Growth of improved quality 3{C}-Si{C} films on
1127 6{H}-Si{C} substrates",
1130 journal = "Applied Physics Letters",
1133 pages = "1353--1355",
1134 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1135 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1136 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1138 URL = "http://link.aip.org/link/?APL/56/1353/1",
1139 doi = "10.1063/1.102512",
1140 notes = "cvd of 3c-sic on 6h-sic",
1144 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1145 Thokala and M. J. Loboda",
1147 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1148 films on 6{H}-Si{C} by chemical vapor deposition from
1152 journal = "Journal of Applied Physics",
1155 pages = "1271--1273",
1156 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1157 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1159 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1160 doi = "10.1063/1.360368",
1161 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1165 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1166 [alpha]-Si{C}(0001) at low temperatures by solid-source
1167 molecular beam epitaxy",
1168 journal = "Journal of Crystal Growth",
1173 notes = "solid source mbe",
1175 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1176 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1177 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1182 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1184 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1188 journal = "Applied Physics Letters",
1192 URL = "http://link.aip.org/link/?APL/18/509/1",
1193 notes = "first time sic by ibs",
1194 doi = "10.1063/1.1653516",
1198 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1199 J. Davis and G. E. Celler",
1201 title = "Formation of buried layers of beta-Si{C} using ion
1202 beam synthesis and incoherent lamp annealing",
1205 journal = "Applied Physics Letters",
1208 pages = "2242--2244",
1209 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1210 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1211 URL = "http://link.aip.org/link/?APL/51/2242/1",
1212 doi = "10.1063/1.98953",
1213 notes = "nice tem images, sic by ibs",
1217 author = "R. I. Scace and G. A. Slack",
1219 title = "Solubility of Carbon in Silicon and Germanium",
1222 journal = "The Journal of Chemical Physics",
1225 pages = "1551--1555",
1226 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1227 doi = "10.1063/1.1730236",
1228 notes = "solubility of c in c-si",
1232 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1233 F. W. Saris and W. Vandervorst",
1235 title = "Role of {C} and {B} clusters in transient diffusion of
1239 journal = "Applied Physics Letters",
1242 pages = "1150--1152",
1243 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1244 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1246 URL = "http://link.aip.org/link/?APL/68/1150/1",
1247 doi = "10.1063/1.115706",
1248 notes = "suppression of transient enhanced diffusion (ted)",
1252 title = "Implantation and transient boron diffusion: the role
1253 of the silicon self-interstitial",
1254 journal = "Nuclear Instruments and Methods in Physics Research
1255 Section B: Beam Interactions with Materials and Atoms",
1260 note = "Selected Papers of the Tenth International Conference
1261 on Ion Implantation Technology (IIT '94)",
1263 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1264 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1265 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1270 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1271 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1272 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1275 title = "Physical mechanisms of transient enhanced dopant
1276 diffusion in ion-implanted silicon",
1279 journal = "Journal of Applied Physics",
1282 pages = "6031--6050",
1283 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1284 doi = "10.1063/1.364452",
1285 notes = "ted, transient enhanced diffusion, c silicon trap",
1289 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1291 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1292 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1295 journal = "Applied Physics Letters",
1299 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1300 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1301 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1303 URL = "http://link.aip.org/link/?APL/64/324/1",
1304 doi = "10.1063/1.111195",
1305 notes = "beta sic nano crystals in si, mbe, annealing",
1309 author = "Richard A. Soref",
1311 title = "Optical band gap of the ternary semiconductor Si[sub 1
1312 - x - y]Ge[sub x]{C}[sub y]",
1315 journal = "Journal of Applied Physics",
1318 pages = "2470--2472",
1319 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1320 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1322 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1323 doi = "10.1063/1.349403",
1324 notes = "band gap of strained si by c",
1328 author = "E Kasper",
1329 title = "Superlattices of group {IV} elements, a new
1330 possibility to produce direct band gap material",
1331 journal = "Physica Scripta",
1334 URL = "http://stacks.iop.org/1402-4896/T35/232",
1336 notes = "superlattices, convert indirect band gap into a
1341 author = "H. J. Osten and J. Griesche and S. Scalese",
1343 title = "Substitutional carbon incorporation in epitaxial
1344 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1345 molecular beam epitaxy",
1348 journal = "Applied Physics Letters",
1352 keywords = "molecular beam epitaxial growth; semiconductor growth;
1353 wide band gap semiconductors; interstitials; silicon
1355 URL = "http://link.aip.org/link/?APL/74/836/1",
1356 doi = "10.1063/1.123384",
1357 notes = "substitutional c in si",
1360 @Article{hohenberg64,
1361 title = "Inhomogeneous Electron Gas",
1362 author = "P. Hohenberg and W. Kohn",
1363 journal = "Phys. Rev.",
1366 pages = "B864--B871",
1370 doi = "10.1103/PhysRev.136.B864",
1371 publisher = "American Physical Society",
1372 notes = "density functional theory, dft",
1376 title = "Self-Consistent Equations Including Exchange and
1377 Correlation Effects",
1378 author = "W. Kohn and L. J. Sham",
1379 journal = "Phys. Rev.",
1382 pages = "A1133--A1138",
1386 doi = "10.1103/PhysRev.140.A1133",
1387 publisher = "American Physical Society",
1388 notes = "dft, exchange and correlation",
1392 title = "Strain-stabilized highly concentrated pseudomorphic
1393 $Si1-x$$Cx$ layers in Si",
1394 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1396 journal = "Phys. Rev. Lett.",
1399 pages = "3578--3581",
1403 doi = "10.1103/PhysRevLett.72.3578",
1404 publisher = "American Physical Society",
1405 notes = "high c concentration in si, heterostructure, starined
1410 title = "Electron Transport Model for Strained Silicon-Carbon
1412 author = "Shu-Tong Chang and Chung-Yi Lin",
1413 journal = "Japanese Journal of Applied Physics",
1416 pages = "2257--2262",
1419 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1420 doi = "10.1143/JJAP.44.2257",
1421 publisher = "The Japan Society of Applied Physics",
1422 notes = "enhance of electron mobility in starined si",
1426 author = "H. J. Osten and P. Gaworzewski",
1428 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1429 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1433 journal = "Journal of Applied Physics",
1436 pages = "4977--4981",
1437 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1438 semiconductors; semiconductor epitaxial layers; carrier
1439 density; Hall mobility; interstitials; defect states",
1440 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1441 doi = "10.1063/1.366364",
1442 notes = "charge transport in strained si",
1446 title = "Carbon-mediated aggregation of self-interstitials in
1447 silicon: {A} large-scale molecular dynamics study",
1448 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1449 journal = "Phys. Rev. B",
1456 doi = "10.1103/PhysRevB.69.155214",
1457 publisher = "American Physical Society",
1458 notes = "simulation using promising tersoff reparametrization",
1462 title = "Event-Based Relaxation of Continuous Disordered
1464 author = "G. T. Barkema and Normand Mousseau",
1465 journal = "Phys. Rev. Lett.",
1468 pages = "4358--4361",
1472 doi = "10.1103/PhysRevLett.77.4358",
1473 publisher = "American Physical Society",
1474 notes = "activation relaxation technique, art, speed up slow
1479 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1480 Minoukadeh and F. Willaime",
1482 title = "Some improvements of the activation-relaxation
1483 technique method for finding transition pathways on
1484 potential energy surfaces",
1487 journal = "The Journal of Chemical Physics",
1493 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1494 surfaces; vacancies (crystal)",
1495 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1496 doi = "10.1063/1.3088532",
1497 notes = "improvements to art, refs for methods to find
1498 transition pathways",
1501 @Article{parrinello81,
1502 author = "M. Parrinello and A. Rahman",
1504 title = "Polymorphic transitions in single crystals: {A} new
1505 molecular dynamics method",
1508 journal = "Journal of Applied Physics",
1511 pages = "7182--7190",
1512 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
1513 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
1514 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
1515 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
1516 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
1518 URL = "http://link.aip.org/link/?JAP/52/7182/1",
1519 doi = "10.1063/1.328693",
1522 @Article{stillinger85,
1523 title = "Computer simulation of local order in condensed phases
1525 author = "Frank H. Stillinger and Thomas A. Weber",
1526 journal = "Phys. Rev. B",
1529 pages = "5262--5271",
1533 doi = "10.1103/PhysRevB.31.5262",
1534 publisher = "American Physical Society",
1538 title = "Environment-dependent interatomic potential for bulk
1540 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
1542 journal = "Phys. Rev. B",
1545 pages = "8542--8552",
1549 doi = "10.1103/PhysRevB.56.8542",
1550 publisher = "American Physical Society",
1554 title = "Interatomic potential for silicon defects and
1556 author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
1557 Kaxiras and V. V. Bulatov and Sidney Yip",
1558 journal = "Phys. Rev. B",
1561 pages = "2539--2550",
1565 doi = "10.1103/PhysRevB.58.2539",
1566 publisher = "American Physical Society",
1570 title = "{PARCAS} molecular dynamics code",
1571 author = "K. Nordlund",
1576 title = "Hyperdynamics: Accelerated Molecular Dynamics of
1578 author = "Arthur F. Voter",
1579 journal = "Phys. Rev. Lett.",
1582 pages = "3908--3911",
1586 doi = "10.1103/PhysRevLett.78.3908",
1587 publisher = "American Physical Society",
1588 notes = "hyperdynamics, accelerated md",
1592 author = "Arthur F. Voter",
1594 title = "A method for accelerating the molecular dynamics
1595 simulation of infrequent events",
1598 journal = "The Journal of Chemical Physics",
1601 pages = "4665--4677",
1602 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
1603 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
1604 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
1605 energy functions; surface diffusion; reaction kinetics
1606 theory; potential energy surfaces",
1607 URL = "http://link.aip.org/link/?JCP/106/4665/1",
1608 doi = "10.1063/1.473503",
1609 notes = "improved hyperdynamics md",
1612 @Article{sorensen2000,
1613 author = "Mads R. S\o rensen and Arthur F. Voter",
1615 title = "Temperature-accelerated dynamics for simulation of
1619 journal = "The Journal of Chemical Physics",
1622 pages = "9599--9606",
1623 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
1624 MOLECULAR DYNAMICS METHOD; surface diffusion",
1625 URL = "http://link.aip.org/link/?JCP/112/9599/1",
1626 doi = "10.1063/1.481576",
1627 notes = "temperature accelerated dynamics, tad",
1631 title = "Parallel replica method for dynamics of infrequent
1633 author = "Arthur F. Voter",
1634 journal = "Phys. Rev. B",
1637 pages = "R13985--R13988",
1641 doi = "10.1103/PhysRevB.57.R13985",
1642 publisher = "American Physical Society",
1643 notes = "parallel replica method, accelerated md",
1647 author = "Xiongwu Wu and Shaomeng Wang",
1649 title = "Enhancing systematic motion in molecular dynamics
1653 journal = "The Journal of Chemical Physics",
1656 pages = "9401--9410",
1657 keywords = "molecular dynamics method; argon; Lennard-Jones
1658 potential; crystallisation; liquid theory",
1659 URL = "http://link.aip.org/link/?JCP/110/9401/1",
1660 doi = "10.1063/1.478948",
1661 notes = "self guided md, sgmd, accelerated md, enhancing
1665 @Article{choudhary05,
1666 author = "Devashish Choudhary and Paulette Clancy",
1668 title = "Application of accelerated molecular dynamics schemes
1669 to the production of amorphous silicon",
1672 journal = "The Journal of Chemical Physics",
1678 keywords = "molecular dynamics method; silicon; glass structure;
1679 amorphous semiconductors",
1680 URL = "http://link.aip.org/link/?JCP/122/154509/1",
1681 doi = "10.1063/1.1878733",
1682 notes = "explanation of sgmd and hyper md, applied to amorphous
1687 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
1689 title = "Carbon precipitation in silicon: Why is it so
1693 journal = "Applied Physics Letters",
1696 pages = "3336--3338",
1697 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
1698 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
1700 URL = "http://link.aip.org/link/?APL/62/3336/1",
1701 doi = "10.1063/1.109063",
1702 notes = "interfacial energy of cubic sic and si",
1705 @Article{chaussende08,
1706 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
1707 journal = "Journal of Crystal Growth",
1712 note = "Proceedings of the E-MRS Conference, Symposium G -
1713 Substrates of Wide Bandgap Materials",
1715 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
1716 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
1717 author = "D. Chaussende and F. Mercier and A. Boulle and F.
1718 Conchon and M. Soueidan and G. Ferro and A. Mantzari
1719 and A. Andreadou and E. K. Polychroniadis and C.
1720 Balloud and S. Juillaguet and J. Camassel and M. Pons",
1721 notes = "3c-sic crystal growth, sic fabrication + links,
1726 title = "Forces in Molecules",
1727 author = "R. P. Feynman",
1728 journal = "Phys. Rev.",
1735 doi = "10.1103/PhysRev.56.340",
1736 publisher = "American Physical Society",
1737 notes = "hellmann feynman forces",
1741 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
1742 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
1743 their Contrasting Properties",
1744 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
1746 journal = "Phys. Rev. Lett.",
1753 doi = "10.1103/PhysRevLett.84.943",
1754 publisher = "American Physical Society",
1755 notes = "si sio2 and sic sio2 interface",
1758 @Article{djurabekova08,
1759 title = "Atomistic simulation of the interface structure of Si
1760 nanocrystals embedded in amorphous silica",
1761 author = "Flyura Djurabekova and Kai Nordlund",
1762 journal = "Phys. Rev. B",
1769 doi = "10.1103/PhysRevB.77.115325",
1770 publisher = "American Physical Society",
1771 notes = "nc-si in sio2, interface energy, nc construction,
1772 angular distribution, coordination",