2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "M. A. Capano and R. J. Trew",
45 title = "Silicon Carbide Electronic Materials and Devices",
46 journal = "MRS Bull.",
53 author = "G. R. Fisher and P. Barnes",
54 title = "Towards a unified view of polytypism in silicon
56 journal = "Philosophical Magazine Part B",
60 notes = "sic polytypes",
64 author = "P. S. de Laplace",
65 title = "Th\'eorie analytique des probabilit\'es",
66 series = "Oeuvres Compl\`etes de Laplace",
68 publisher = "Gauthier-Villars",
73 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
74 title = "{Atomistic modeling of brittleness in covalent
76 journal = "Phys. Rev. B",
82 doi = "10.1103/PhysRevB.76.224103",
83 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
84 longe(r)-range-interactions, brittle propagation of
85 fracture, more available potentials, universal energy
86 relation (uer), minimum range model (mrm)",
90 title = "Stress relaxation in $a-Si$ induced by ion
92 author = "H. M. Urbassek M. Koster",
93 journal = "Phys. Rev. B",
96 pages = "11219--11224",
100 doi = "10.1103/PhysRevB.62.11219",
101 publisher = "American Physical Society",
102 notes = "virial derivation for 3-body tersoff potential",
105 @Article{breadmore99,
106 title = "Direct simulation of ion-beam-induced stressing and
107 amorphization of silicon",
108 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
109 journal = "Phys. Rev. B",
112 pages = "12610--12616",
116 doi = "10.1103/PhysRevB.60.12610",
117 publisher = "American Physical Society",
118 notes = "virial derivation for 3-body tersoff potential",
122 author = "Henri Moissan",
123 title = "Nouvelles recherches sur la météorité de Cañon
125 journal = "Comptes rendus de l'Académie des Sciences",
132 author = "Y. S. Park",
133 title = "Si{C} Materials and Devices",
134 publisher = "Academic Press",
135 address = "San Diego",
140 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
141 Calvin H. Carter Jr. and D. Asbury",
142 title = "Si{C} Seeded Boule Growth",
143 journal = "Materials Science Forum",
147 notes = "modified lely process, micropipes",
151 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
152 Thermodynamical Properties of Lennard-Jones Molecules",
153 author = "Loup Verlet",
154 journal = "Phys. Rev.",
160 doi = "10.1103/PhysRev.159.98",
161 publisher = "American Physical Society",
162 notes = "velocity verlet integration algorithm equation of
166 @Article{berendsen84,
167 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
168 Gunsteren and A. DiNola and J. R. Haak",
170 title = "Molecular dynamics with coupling to an external bath",
173 journal = "The Journal of Chemical Physics",
176 pages = "3684--3690",
177 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
178 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
179 URL = "http://link.aip.org/link/?JCP/81/3684/1",
180 doi = "10.1063/1.448118",
181 notes = "berendsen thermostat barostat",
185 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
187 title = "Molecular dynamics determination of defect energetics
188 in beta -Si{C} using three representative empirical
190 journal = "Modelling and Simulation in Materials Science and
195 URL = "http://stacks.iop.org/0965-0393/3/615",
196 notes = "comparison of tersoff, pearson and eam for defect
197 energetics in sic; (m)eam parameters for sic",
202 title = "Relationship between the embedded-atom method and
204 author = "Donald W. Brenner",
205 journal = "Phys. Rev. Lett.",
212 doi = "10.1103/PhysRevLett.63.1022",
213 publisher = "American Physical Society",
214 notes = "relation of tersoff and eam potential",
218 title = "Molecular-dynamics study of self-interstitials in
220 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
221 journal = "Phys. Rev. B",
224 pages = "9552--9558",
228 doi = "10.1103/PhysRevB.35.9552",
229 publisher = "American Physical Society",
230 notes = "selft-interstitials in silicon, stillinger-weber,
231 calculation of defect formation energy, defect
236 title = "Extended interstitials in silicon and germanium",
237 author = "H. R. Schober",
238 journal = "Phys. Rev. B",
241 pages = "13013--13015",
245 doi = "10.1103/PhysRevB.39.13013",
246 publisher = "American Physical Society",
247 notes = "stillinger-weber silicon 110 stable and metastable
248 dumbbell configuration",
252 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
253 Defect accumulation, topological features, and
255 author = "F. Gao and W. J. Weber",
256 journal = "Phys. Rev. B",
263 doi = "10.1103/PhysRevB.66.024106",
264 publisher = "American Physical Society",
265 notes = "sic intro, si cascade in 3c-sic, amorphization,
266 tersoff modified, pair correlation of amorphous sic, md
270 @Article{devanathan98,
271 title = "Computer simulation of a 10 ke{V} Si displacement
273 journal = "Nuclear Instruments and Methods in Physics Research
274 Section B: Beam Interactions with Materials and Atoms",
280 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
281 author = "R. Devanathan and W. J. Weber and T. Diaz de la
283 notes = "modified tersoff short range potential, ab initio
287 @Article{devanathan98_2,
288 title = "Displacement threshold energies in [beta]-Si{C}",
289 journal = "Journal of Nuclear Materials",
295 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
296 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
298 notes = "modified tersoff, ab initio, combined ab initio
303 title = "Si{C}/Si heteroepitaxial growth",
304 author = "M. Kitabatake",
305 journal = "Thin Solid Films",
310 notes = "md simulation, sic si heteroepitaxy, mbe",
314 title = "Intrinsic point defects in crystalline silicon:
315 Tight-binding molecular dynamics studies of
316 self-diffusion, interstitial-vacancy recombination, and
318 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
320 journal = "Phys. Rev. B",
323 pages = "14279--14289",
327 doi = "10.1103/PhysRevB.55.14279",
328 publisher = "American Physical Society",
329 notes = "si self interstitial, diffusion, tbmd",
333 title = "Tight-binding theory of native point defects in
335 author = "L. Colombo",
336 journal = "Annu. Rev. Mater. Res.",
341 doi = "10.1146/annurev.matsci.32.111601.103036",
342 publisher = "Annual Reviews",
343 notes = "si self interstitial, tbmd, virial stress",
347 title = "Ab initio and empirical-potential studies of defect
348 properties in $3{C}-Si{C}$",
349 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
351 journal = "Phys. Rev. B",
358 doi = "10.1103/PhysRevB.64.245208",
359 publisher = "American Physical Society",
360 notes = "defects in 3c-sic",
363 @Article{mattoni2002,
364 title = "Self-interstitial trapping by carbon complexes in
365 crystalline silicon",
366 author = "A. Mattoni and F. Bernardini and L. Colombo",
367 journal = "Phys. Rev. B",
374 doi = "10.1103/PhysRevB.66.195214",
375 publisher = "American Physical Society",
376 notes = "c in c-si, diffusion, interstitial configuration +
381 title = "Calculations of Silicon Self-Interstitial Defects",
382 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
384 journal = "Phys. Rev. Lett.",
387 pages = "2351--2354",
391 doi = "10.1103/PhysRevLett.83.2351",
392 publisher = "American Physical Society",
393 notes = "nice images of the defects, si defect overview + refs",
397 title = "Identification of the migration path of interstitial
399 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
400 journal = "Phys. Rev. B",
403 pages = "7439--7442",
407 doi = "10.1103/PhysRevB.50.7439",
408 publisher = "American Physical Society",
409 notes = "carbon interstitial migration path shown, 001 c-si
414 title = {Ab initio investigation of carbon-related defects in silicon},
415 author = {Dal Pino, A. and Rappe, Andrew M. and Joannopoulos, J. D.},
416 journal = {Phys. Rev. B},
419 pages = {12554--12557},
423 doi = {10.1103/PhysRevB.47.12554},
424 publisher = {American Physical Society},
425 notes = {c interstitials in crystalline silicon}
429 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
431 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
432 Sokrates T. Pantelides",
433 journal = "Phys. Rev. Lett.",
436 pages = "1814--1817",
440 doi = "10.1103/PhysRevLett.52.1814",
441 publisher = "American Physical Society",
442 notes = "microscopic theory diffusion silicon dft migration
447 title = "Short-range order, bulk moduli, and physical trends in
448 c-$Si1-x$$Cx$ alloys",
449 author = "P. C. Kelires",
450 journal = "Phys. Rev. B",
453 pages = "8784--8787",
457 doi = "10.1103/PhysRevB.55.8784",
458 publisher = "American Physical Society",
459 notes = "c strained si, montecarlo md, bulk moduli, next
464 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
465 Application to the $Si1-x-yGexCy$ System",
466 author = "P. C. Kelires",
467 journal = "Phys. Rev. Lett.",
470 pages = "1114--1117",
474 doi = "10.1103/PhysRevLett.75.1114",
475 publisher = "American Physical Society",
476 notes = "mc md, strain compensation in si ge by c insertion",
480 title = "{EPR} Observation of the Isolated Interstitial Carbon
482 author = "G. D. Watkins and K. L. Brower",
483 journal = "Phys. Rev. Lett.",
486 pages = "1329--1332",
490 doi = "10.1103/PhysRevLett.36.1329",
491 publisher = "American Physical Society",
492 notes = "epr observations of 100 interstitial carbon atom in
497 title = "{EPR} identification of the single-acceptor state of
498 interstitial carbon in silicon",
499 author = "G. D. Watkins L. W. Song",
500 journal = "Phys. Rev. B",
503 pages = "5759--5764",
507 doi = "10.1103/PhysRevB.42.5759",
508 publisher = "American Physical Society",
512 title = "Carbon incorporation into Si at high concentrations by
513 ion implantation and solid phase epitaxy",
514 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
515 Picraux and J. K. Watanabe and J. W. Mayer",
516 journal = "J. Appl. Phys.",
521 doi = "10.1063/1.360806",
522 notes = "strained silicon, carbon supersaturation",
525 @Article{laveant2002,
526 title = "Epitaxy of carbon-rich silicon with {MBE}",
527 author = "P. Laveant and G. Gerth and P. Werner and U.
529 journal = "Materials Science and Engineering B",
533 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
534 notes = "low c in si, tensile stress to compensate compressive
535 stress, avoid sic precipitation",
539 author = "P. Werner and S. Eichler and G. Mariani and R.
540 K{\"{o}}gler and W. Skorupa",
541 title = "Investigation of {C}[sub x]Si defects in {C} implanted
542 silicon by transmission electron microscopy",
545 journal = "Applied Physics Letters",
549 keywords = "silicon; ion implantation; carbon; crystal defects;
550 transmission electron microscopy; annealing; positron
551 annihilation; secondary ion mass spectroscopy; buried
552 layers; precipitation",
553 URL = "http://link.aip.org/link/?APL/70/252/1",
554 doi = "10.1063/1.118381",
555 notes = "si-c complexes, agglomerate, sic in si matrix, sic
560 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
561 Picraux and J. K. Watanabe and J. W. Mayer",
563 title = "Precipitation and relaxation in strained Si[sub 1 -
564 y]{C}[sub y]/Si heterostructures",
567 journal = "Journal of Applied Physics",
570 pages = "3656--3668",
571 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
572 URL = "http://link.aip.org/link/?JAP/76/3656/1",
573 doi = "10.1063/1.357429",
574 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
578 title = "Prospects for device implementation of wide band gap
580 author = "J. H. Edgar",
581 journal = "J. Mater. Res.",
586 doi = "10.1557/JMR.1992.0235",
587 notes = "properties wide band gap semiconductor, sic
591 @Article{zirkelbach2007,
592 title = "Monte Carlo simulation study of a selforganisation
593 process leading to ordered precipitate structures",
594 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
596 journal = "Nucl. Instr. and Meth. B",
603 doi = "doi:10.1016/j.nimb.2006.12.118",
604 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
608 @Article{zirkelbach2006,
609 title = "Monte-Carlo simulation study of the self-organization
610 of nanometric amorphous precipitates in regular arrays
611 during ion irradiation",
612 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
614 journal = "Nucl. Instr. and Meth. B",
621 doi = "doi:10.1016/j.nimb.2005.08.162",
622 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
626 @Article{zirkelbach2005,
627 title = "Modelling of a selforganization process leading to
628 periodic arrays of nanometric amorphous precipitates by
630 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
632 journal = "Comp. Mater. Sci.",
639 doi = "doi:10.1016/j.commatsci.2004.12.016",
640 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
645 title = "Controlling the density distribution of Si{C}
646 nanocrystals for the ion beam synthesis of buried Si{C}
648 journal = "Nuclear Instruments and Methods in Physics Research
649 Section B: Beam Interactions with Materials and Atoms",
656 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
657 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
658 author = "J. K. N. Lindner and B. Stritzker",
659 notes = "two-step implantation process",
662 @Article{lindner99_2,
663 title = "Mechanisms in the ion beam synthesis of Si{C} layers
665 journal = "Nuclear Instruments and Methods in Physics Research
666 Section B: Beam Interactions with Materials and Atoms",
673 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
674 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
675 author = "J. K. N. Lindner and B. Stritzker",
679 title = "Ion beam synthesis of buried Si{C} layers in silicon:
680 Basic physical processes",
681 journal = "Nuclear Instruments and Methods in Physics Research
682 Section B: Beam Interactions with Materials and Atoms",
689 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
690 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
691 author = "Jörg K. N. Lindner",
695 title = "High-dose carbon implantations into silicon:
696 fundamental studies for new technological tricks",
697 author = "J. K. N. Lindner",
698 journal = "Appl. Phys. A",
702 doi = "10.1007/s00339-002-2062-8",
703 notes = "ibs, burried sic layers",
707 author = "B. J. Alder and T. E. Wainwright",
708 title = "Phase Transition for a Hard Sphere System",
711 journal = "The Journal of Chemical Physics",
714 pages = "1208--1209",
715 URL = "http://link.aip.org/link/?JCP/27/1208/1",
716 doi = "10.1063/1.1743957",
720 author = "B. J. Alder and T. E. Wainwright",
721 title = "Studies in Molecular Dynamics. {I}. General Method",
724 journal = "The Journal of Chemical Physics",
728 URL = "http://link.aip.org/link/?JCP/31/459/1",
729 doi = "10.1063/1.1730376",
732 @Article{tersoff_si1,
733 title = "New empirical model for the structural properties of
735 author = "J. Tersoff",
736 journal = "Phys. Rev. Lett.",
743 doi = "10.1103/PhysRevLett.56.632",
744 publisher = "American Physical Society",
747 @Article{tersoff_si2,
748 title = "New empirical approach for the structure and energy of
750 author = "J. Tersoff",
751 journal = "Phys. Rev. B",
754 pages = "6991--7000",
758 doi = "10.1103/PhysRevB.37.6991",
759 publisher = "American Physical Society",
762 @Article{tersoff_si3,
763 title = "Empirical interatomic potential for silicon with
764 improved elastic properties",
765 author = "J. Tersoff",
766 journal = "Phys. Rev. B",
769 pages = "9902--9905",
773 doi = "10.1103/PhysRevB.38.9902",
774 publisher = "American Physical Society",
778 title = "Empirical Interatomic Potential for Carbon, with
779 Applications to Amorphous Carbon",
780 author = "J. Tersoff",
781 journal = "Phys. Rev. Lett.",
784 pages = "2879--2882",
788 doi = "10.1103/PhysRevLett.61.2879",
789 publisher = "American Physical Society",
793 title = "Modeling solid-state chemistry: Interatomic potentials
794 for multicomponent systems",
795 author = "J. Tersoff",
796 journal = "Phys. Rev. B",
799 pages = "5566--5568",
803 doi = "10.1103/PhysRevB.39.5566",
804 publisher = "American Physical Society",
808 title = {Carbon defects and defect reactions in silicon},
809 author = {Tersoff, J. },
810 journal = {Phys. Rev. Lett.},
813 pages = {1757--1760},
817 doi = {10.1103/PhysRevLett.64.1757},
818 publisher = {American Physical Society}
822 title = "Point defects and dopant diffusion in silicon",
823 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
824 journal = "Rev. Mod. Phys.",
831 doi = "10.1103/RevModPhys.61.289",
832 publisher = "American Physical Society",
836 title = "Silicon carbide: synthesis and processing",
837 journal = "Nuclear Instruments and Methods in Physics Research
838 Section B: Beam Interactions with Materials and Atoms",
843 note = "Radiation Effects in Insulators",
845 doi = "DOI: 10.1016/0168-583X(96)00065-1",
846 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
851 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
852 Lin and B. Sverdlov and M. Burns",
854 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
855 ZnSe-based semiconductor device technologies",
858 journal = "Journal of Applied Physics",
861 pages = "1363--1398",
862 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
863 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
864 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
866 URL = "http://link.aip.org/link/?JAP/76/1363/1",
867 doi = "10.1063/1.358463",
871 author = "Noch Unbekannt",
872 title = "How to find references",
873 journal = "Journal of Applied References",
880 title = "Atomistic simulation of thermomechanical properties of
882 author = "Meijie Tang and Sidney Yip",
883 journal = "Phys. Rev. B",
886 pages = "15150--15159",
890 doi = "10.1103/PhysRevB.52.15150",
891 notes = "modified tersoff, scale cutoff with volume",
892 publisher = "American Physical Society",
896 title = "Silicon carbide as a new {MEMS} technology",
897 journal = "Sensors and Actuators A: Physical",
903 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
904 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
905 author = "Pasqualina M. Sarro",
907 keywords = "Silicon carbide",
908 keywords = "Micromachining",
909 keywords = "Mechanical stress",
913 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
914 semiconductor for high-temperature applications: {A}
916 journal = "Solid-State Electronics",
919 pages = "1409--1422",
922 doi = "DOI: 10.1016/0038-1101(96)00045-7",
923 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
924 author = "J. B. Casady and R. W. Johnson",
927 @Article{giancarli98,
928 title = "Design requirements for Si{C}/Si{C} composites
929 structural material in fusion power reactor blankets",
930 journal = "Fusion Engineering and Design",
936 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
937 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
938 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
939 Marois and N. B. Morley and J. F. Salavy",
943 title = "Electrical and optical characterization of Si{C}",
944 journal = "Physica B: Condensed Matter",
950 doi = "DOI: 10.1016/0921-4526(93)90249-6",
951 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
952 author = "G. Pensl and W. J. Choyke",
956 title = "Investigation of growth processes of ingots of silicon
957 carbide single crystals",
958 journal = "Journal of Crystal Growth",
963 notes = "modifief lely process",
965 doi = "DOI: 10.1016/0022-0248(78)90169-0",
966 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
967 author = "Yu. M. Tairov and V. F. Tsvetkov",
971 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
973 title = "Growth and Characterization of Cubic Si{C}
974 Single-Crystal Films on Si",
977 journal = "Journal of The Electrochemical Society",
980 pages = "1558--1565",
981 keywords = "semiconductor materials; silicon compounds; carbon
982 compounds; crystal morphology; electron mobility",
983 URL = "http://link.aip.org/link/?JES/134/1558/1",
984 doi = "10.1149/1.2100708",
985 notes = "blue light emitting diodes (led)",
989 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
990 and Hiroyuki Matsunami",
991 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
995 journal = "Journal of Applied Physics",
999 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1000 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1002 URL = "http://link.aip.org/link/?JAP/73/726/1",
1003 doi = "10.1063/1.353329",
1007 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1008 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1009 Yoganathan and J. Yang and P. Pirouz",
1011 title = "Growth of improved quality 3{C}-Si{C} films on
1012 6{H}-Si{C} substrates",
1015 journal = "Applied Physics Letters",
1018 pages = "1353--1355",
1019 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1020 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1021 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1023 URL = "http://link.aip.org/link/?APL/56/1353/1",
1024 doi = "10.1063/1.102512",
1028 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1029 [alpha]-Si{C}(0001) at low temperatures by solid-source
1030 molecular beam epitaxy",
1031 journal = "Journal of Crystal Growth",
1036 notes = "solid source mbe",
1038 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1039 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1040 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1045 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1047 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1051 journal = "Applied Physics Letters",
1055 URL = "http://link.aip.org/link/?APL/18/509/1",
1056 notes = "first time sic by ibs",
1057 doi = "10.1063/1.1653516",
1061 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1062 J. Davis and G. E. Celler",
1064 title = "Formation of buried layers of beta-Si{C} using ion
1065 beam synthesis and incoherent lamp annealing",
1068 journal = "Applied Physics Letters",
1071 pages = "2242--2244",
1072 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1073 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1074 URL = "http://link.aip.org/link/?APL/51/2242/1",
1075 doi = "10.1063/1.98953",
1076 notes = "nice tem images, sic by ibs",
1080 author = "R. I. Scace and G. A. Slack",
1082 title = "Solubility of Carbon in Silicon and Germanium",
1085 journal = "The Journal of Chemical Physics",
1088 pages = "1551--1555",
1089 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1090 doi = "10.1063/1.1730236",
1091 notes = "solubility of c in c-si",
1095 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1096 F. W. Saris and W. Vandervorst",
1098 title = "Role of {C} and {B} clusters in transient diffusion of
1102 journal = "Applied Physics Letters",
1105 pages = "1150--1152",
1106 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1107 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1109 URL = "http://link.aip.org/link/?APL/68/1150/1",
1110 doi = "10.1063/1.115706",
1111 notes = "suppression of transient enhanced diffusion (ted)",
1115 title = "Implantation and transient boron diffusion: the role
1116 of the silicon self-interstitial",
1117 journal = "Nuclear Instruments and Methods in Physics Research
1118 Section B: Beam Interactions with Materials and Atoms",
1123 note = "Selected Papers of the Tenth International Conference
1124 on Ion Implantation Technology (IIT '94)",
1126 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1127 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1128 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1133 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1135 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1136 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1139 journal = "Applied Physics Letters",
1143 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1144 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1145 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1147 URL = "http://link.aip.org/link/?APL/64/324/1",
1148 doi = "10.1063/1.111195",
1149 notes = "beta sic nano crystals in si, mbe, annealing",
1153 author = "Richard A. Soref",
1155 title = "Optical band gap of the ternary semiconductor Si[sub 1
1156 - x - y]Ge[sub x]{C}[sub y]",
1159 journal = "Journal of Applied Physics",
1162 pages = "2470--2472",
1163 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1164 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1166 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1167 doi = "10.1063/1.349403",
1168 notes = "band gap of strained si by c",
1172 author = "E Kasper",
1173 title = "Superlattices of group {IV} elements, a new
1174 possibility to produce direct band gap material",
1175 journal = "Physica Scripta",
1178 URL = "http://stacks.iop.org/1402-4896/T35/232",
1180 notes = "superlattices, convert indirect band gap into a
1185 author = "H. J. Osten and J. Griesche and S. Scalese",
1187 title = "Substitutional carbon incorporation in epitaxial
1188 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1189 molecular beam epitaxy",
1192 journal = "Applied Physics Letters",
1196 keywords = "molecular beam epitaxial growth; semiconductor growth;
1197 wide band gap semiconductors; interstitials; silicon
1199 URL = "http://link.aip.org/link/?APL/74/836/1",
1200 doi = "10.1063/1.123384",
1201 notes = "substitutional c in si",
1204 @Article{hohenberg64,
1205 title = "Inhomogeneous Electron Gas",
1206 author = "P. Hohenberg and W. Kohn",
1207 journal = "Phys. Rev.",
1210 pages = "B864--B871",
1214 doi = "10.1103/PhysRev.136.B864",
1215 publisher = "American Physical Society",
1216 notes = "density functional theory, dft",
1220 title = "Self-Consistent Equations Including Exchange and
1221 Correlation Effects",
1222 author = "W. Kohn and L. J. Sham",
1223 journal = "Phys. Rev.",
1226 pages = "A1133--A1138",
1230 doi = "10.1103/PhysRev.140.A1133",
1231 publisher = "American Physical Society",
1232 notes = "dft, exchange and correlation",
1236 title = "Strain-stabilized highly concentrated pseudomorphic
1237 $Si1-x$$Cx$ layers in Si",
1238 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1240 journal = "Phys. Rev. Lett.",
1243 pages = "3578--3581",
1247 doi = "10.1103/PhysRevLett.72.3578",
1248 publisher = "American Physical Society",
1249 notes = "high c concentration in si, heterostructure, starined
1254 title = "Electron Transport Model for Strained Silicon-Carbon
1256 author = "Shu-Tong Chang and Chung-Yi Lin",
1257 journal = "Japanese Journal of Applied Physics",
1260 pages = "2257--2262",
1263 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1264 doi = "10.1143/JJAP.44.2257",
1265 publisher = "The Japan Society of Applied Physics",
1266 notes = "enhance of electron mobility in starined si",
1270 author = "H. J. Osten and P. Gaworzewski",
1272 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1273 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1277 journal = "Journal of Applied Physics",
1280 pages = "4977--4981",
1281 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1282 semiconductors; semiconductor epitaxial layers; carrier
1283 density; Hall mobility; interstitials; defect states",
1284 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1285 doi = "10.1063/1.366364",
1286 notes = "charge transport in strained si",
1289 @Article{PhysRevB.69.155214,
1290 title = "Carbon-mediated aggregation of self-interstitials in
1291 silicon: {A} large-scale molecular dynamics study",
1292 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1293 journal = "Phys. Rev. B",
1300 doi = "10.1103/PhysRevB.69.155214",
1301 publisher = "American Physical Society",
1302 notes = "simulation using promising tersoff reparametrization",
1305 @Article{PhysRevB.52.15150,
1306 title = "Atomistic simulation of thermomechanical properties of
1308 author = "Meijie Tang and Sidney Yip",
1309 journal = "Phys. Rev. B",
1312 pages = "15150--15159",
1316 doi = "10.1103/PhysRevB.52.15150",
1317 publisher = "American Physical Society",
1318 notes = "promising tersoff reparametrization",