2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Annalen der Physik",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
19 @Article{albe_sic_pot,
20 author = "Paul Erhart and Karsten Albe",
21 title = "Analytical potential for atomistic simulations of
22 silicon, carbon, and silicon carbide",
25 journal = "Phys. Rev. B",
31 notes = "alble reparametrization, analytical bond oder
33 keywords = "silicon; elemental semiconductors; carbon; silicon
34 compounds; wide band gap semiconductors; elasticity;
35 enthalpy; point defects; crystallographic shear; atomic
37 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
38 doi = "10.1103/PhysRevB.71.035211",
42 title = "The role of thermostats in modeling vapor phase
43 condensation of silicon nanoparticles",
44 journal = "Applied Surface Science",
49 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
51 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
52 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
53 author = "Paul Erhart and Karsten Albe",
57 title = "Modeling the metal-semiconductor interaction:
58 Analytical bond-order potential for platinum-carbon",
59 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
60 journal = "Phys. Rev. B",
67 doi = "10.1103/PhysRevB.65.195124",
68 publisher = "American Physical Society",
69 notes = "derivation of albe bond order formalism",
73 title = "Vibrational absorption of carbon in silicon",
74 journal = "Journal of Physics and Chemistry of Solids",
81 doi = "DOI: 10.1016/0022-3697(65)90166-6",
82 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
83 author = "R. C. Newman and J. B. Willis",
84 notes = "c impurity dissolved as substitutional c in si",
88 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
91 title = "Effect of Carbon on the Lattice Parameter of Silicon",
94 journal = "Journal of Applied Physics",
98 URL = "http://link.aip.org/link/?JAP/39/4365/1",
99 doi = "10.1063/1.1656977",
100 notes = "lattice contraction due to subst c",
104 title = "The solubility of carbon in pulled silicon crystals",
105 journal = "Journal of Physics and Chemistry of Solids",
108 pages = "1211--1219",
112 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
113 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
114 author = "A. R. Bean and R. C. Newman",
115 notes = "experimental solubility data of carbon in silicon",
119 author = "M. A. Capano and R. J. Trew",
120 title = "Silicon Carbide Electronic Materials and Devices",
121 journal = "MRS Bull.",
128 author = "G. R. Fisher and P. Barnes",
129 title = "Towards a unified view of polytypism in silicon
131 journal = "Philos. Mag. B",
135 notes = "sic polytypes",
139 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
140 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
141 Serre and A. Perez-Rodriguez",
142 title = "Synthesis of nano-sized Si{C} precipitates in Si by
143 simultaneous dual-beam implantation of {C}+ and Si+
145 journal = "Appl. Phys. A: Mater. Sci. Process.",
150 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
151 notes = "dual implantation, sic prec enhanced by vacancies,
152 precipitation by interstitial and substitutional
153 carbon, both mechanisms explained + refs",
157 title = "Carbon-mediated effects in silicon and in
158 silicon-related materials",
159 journal = "Materials Chemistry and Physics",
166 doi = "DOI: 10.1016/0254-0584(95)01673-I",
167 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
168 author = "W. Skorupa and R. A. Yankov",
169 notes = "review of silicon carbon compound",
173 author = "P. S. de Laplace",
174 title = "Th\'eorie analytique des probabilit\'es",
175 series = "Oeuvres Compl\`etes de Laplace",
177 publisher = "Gauthier-Villars",
181 @Article{mattoni2007,
182 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
183 title = "{Atomistic modeling of brittleness in covalent
185 journal = "Phys. Rev. B",
191 doi = "10.1103/PhysRevB.76.224103",
192 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
193 longe(r)-range-interactions, brittle propagation of
194 fracture, more available potentials, universal energy
195 relation (uer), minimum range model (mrm)",
199 title = "Comparative study of silicon empirical interatomic
201 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
202 journal = "Phys. Rev. B",
205 pages = "2250--2279",
209 doi = "10.1103/PhysRevB.46.2250",
210 publisher = "American Physical Society",
211 notes = "comparison of classical potentials for si",
215 title = "Stress relaxation in $a-Si$ induced by ion
217 author = "H. M. Urbassek M. Koster",
218 journal = "Phys. Rev. B",
221 pages = "11219--11224",
225 doi = "10.1103/PhysRevB.62.11219",
226 publisher = "American Physical Society",
227 notes = "virial derivation for 3-body tersoff potential",
230 @Article{breadmore99,
231 title = "Direct simulation of ion-beam-induced stressing and
232 amorphization of silicon",
233 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
234 journal = "Phys. Rev. B",
237 pages = "12610--12616",
241 doi = "10.1103/PhysRevB.60.12610",
242 publisher = "American Physical Society",
243 notes = "virial derivation for 3-body tersoff potential",
247 title = "First-Principles Calculation of Stress",
248 author = "O. H. Nielsen and Richard M. Martin",
249 journal = "Phys. Rev. Lett.",
256 doi = "10.1103/PhysRevLett.50.697",
257 publisher = "American Physical Society",
258 notes = "generalization of virial theorem",
262 title = "Quantum-mechanical theory of stress and force",
263 author = "O. H. Nielsen and Richard M. Martin",
264 journal = "Phys. Rev. B",
267 pages = "3780--3791",
271 doi = "10.1103/PhysRevB.32.3780",
272 publisher = "American Physical Society",
273 notes = "dft virial stress and forces",
277 author = "Henri Moissan",
278 title = "Nouvelles recherches sur la météorité de Cañon
280 journal = "Comptes rendus de l'Académie des Sciences",
287 author = "Y. S. Park",
288 title = "Si{C} Materials and Devices",
289 publisher = "Academic Press",
290 address = "San Diego",
295 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
296 Calvin H. Carter Jr. and D. Asbury",
297 title = "Si{C} Seeded Boule Growth",
298 journal = "Materials Science Forum",
302 notes = "modified lely process, micropipes",
306 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
307 Thermodynamical Properties of Lennard-Jones Molecules",
308 author = "Loup Verlet",
309 journal = "Phys. Rev.",
315 doi = "10.1103/PhysRev.159.98",
316 publisher = "American Physical Society",
317 notes = "velocity verlet integration algorithm equation of
321 @Article{berendsen84,
322 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
323 Gunsteren and A. DiNola and J. R. Haak",
325 title = "Molecular dynamics with coupling to an external bath",
328 journal = "J. Chem. Phys.",
331 pages = "3684--3690",
332 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
333 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
334 URL = "http://link.aip.org/link/?JCP/81/3684/1",
335 doi = "10.1063/1.448118",
336 notes = "berendsen thermostat barostat",
340 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
342 title = "Molecular dynamics determination of defect energetics
343 in beta -Si{C} using three representative empirical
345 journal = "Modell. Simul. Mater. Sci. Eng.",
349 URL = "http://stacks.iop.org/0965-0393/3/615",
350 notes = "comparison of tersoff, pearson and eam for defect
351 energetics in sic; (m)eam parameters for sic",
356 title = "Relationship between the embedded-atom method and
358 author = "Donald W. Brenner",
359 journal = "Phys. Rev. Lett.",
366 doi = "10.1103/PhysRevLett.63.1022",
367 publisher = "American Physical Society",
368 notes = "relation of tersoff and eam potential",
372 title = "Molecular-dynamics study of self-interstitials in
374 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
375 journal = "Phys. Rev. B",
378 pages = "9552--9558",
382 doi = "10.1103/PhysRevB.35.9552",
383 publisher = "American Physical Society",
384 notes = "selft-interstitials in silicon, stillinger-weber,
385 calculation of defect formation energy, defect
390 title = "Extended interstitials in silicon and germanium",
391 author = "H. R. Schober",
392 journal = "Phys. Rev. B",
395 pages = "13013--13015",
399 doi = "10.1103/PhysRevB.39.13013",
400 publisher = "American Physical Society",
401 notes = "stillinger-weber silicon 110 stable and metastable
402 dumbbell configuration",
406 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
407 Defect accumulation, topological features, and
409 author = "F. Gao and W. J. Weber",
410 journal = "Phys. Rev. B",
417 doi = "10.1103/PhysRevB.66.024106",
418 publisher = "American Physical Society",
419 notes = "sic intro, si cascade in 3c-sic, amorphization,
420 tersoff modified, pair correlation of amorphous sic, md
424 @Article{devanathan98,
425 title = "Computer simulation of a 10 ke{V} Si displacement
427 journal = "Nucl. Instrum. Methods Phys. Res. B",
433 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
434 author = "R. Devanathan and W. J. Weber and T. Diaz de la
436 notes = "modified tersoff short range potential, ab initio
440 @Article{devanathan98_2,
441 title = "Displacement threshold energies in [beta]-Si{C}",
442 journal = "J. Nucl. Mater.",
448 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
449 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
451 notes = "modified tersoff, ab initio, combined ab initio
455 @Article{kitabatake00,
456 title = "Si{C}/Si heteroepitaxial growth",
457 author = "M. Kitabatake",
458 journal = "Thin Solid Films",
463 notes = "md simulation, sic si heteroepitaxy, mbe",
467 title = "Intrinsic point defects in crystalline silicon:
468 Tight-binding molecular dynamics studies of
469 self-diffusion, interstitial-vacancy recombination, and
471 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
473 journal = "Phys. Rev. B",
476 pages = "14279--14289",
480 doi = "10.1103/PhysRevB.55.14279",
481 publisher = "American Physical Society",
482 notes = "si self interstitial, diffusion, tbmd",
486 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
489 title = "A kinetic Monte--Carlo study of the effective
490 diffusivity of the silicon self-interstitial in the
491 presence of carbon and boron",
494 journal = "J. Appl. Phys.",
497 pages = "1963--1967",
498 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
499 CARBON ADDITIONS; BORON ADDITIONS; elemental
500 semiconductors; self-diffusion",
501 URL = "http://link.aip.org/link/?JAP/84/1963/1",
502 doi = "10.1063/1.368328",
503 notes = "kinetic monte carlo of si self interstitial
508 title = "Barrier to Migration of the Silicon
510 author = "Y. Bar-Yam and J. D. Joannopoulos",
511 journal = "Phys. Rev. Lett.",
514 pages = "1129--1132",
518 doi = "10.1103/PhysRevLett.52.1129",
519 publisher = "American Physical Society",
520 notes = "si self-interstitial migration barrier",
523 @Article{bar-yam84_2,
524 title = "Electronic structure and total-energy migration
525 barriers of silicon self-interstitials",
526 author = "Y. Bar-Yam and J. D. Joannopoulos",
527 journal = "Phys. Rev. B",
530 pages = "1844--1852",
534 doi = "10.1103/PhysRevB.30.1844",
535 publisher = "American Physical Society",
539 title = "First-principles calculations of self-diffusion
540 constants in silicon",
541 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
542 and D. B. Laks and W. Andreoni and S. T. Pantelides",
543 journal = "Phys. Rev. Lett.",
546 pages = "2435--2438",
550 doi = "10.1103/PhysRevLett.70.2435",
551 publisher = "American Physical Society",
552 notes = "si self int diffusion by ab initio md, formation
553 entropy calculations",
557 title = "Defect migration in crystalline silicon",
558 author = "Lindsey J. Munro and David J. Wales",
559 journal = "Phys. Rev. B",
562 pages = "3969--3980",
566 doi = "10.1103/PhysRevB.59.3969",
567 publisher = "American Physical Society",
568 notes = "eigenvector following method, vacancy and interstiial
569 defect migration mechanisms",
573 title = "Tight-binding theory of native point defects in
575 author = "L. Colombo",
576 journal = "Annu. Rev. Mater. Res.",
581 doi = "10.1146/annurev.matsci.32.111601.103036",
582 publisher = "Annual Reviews",
583 notes = "si self interstitial, tbmd, virial stress",
586 @Article{al-mushadani03,
587 title = "Free-energy calculations of intrinsic point defects in
589 author = "O. K. Al-Mushadani and R. J. Needs",
590 journal = "Phys. Rev. B",
597 doi = "10.1103/PhysRevB.68.235205",
598 publisher = "American Physical Society",
599 notes = "formation energies of intrinisc point defects in
600 silicon, si self interstitials, free energy",
604 title = "Electronic surface error in the Si interstitial
606 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
608 journal = "Phys. Rev. B",
615 doi = "10.1103/PhysRevB.77.155211",
616 publisher = "American Physical Society",
617 notes = "si self interstitial formation energies by dft",
620 @Article{goedecker02,
621 title = "A Fourfold Coordinated Point Defect in Silicon",
622 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
623 journal = "Phys. Rev. Lett.",
630 doi = "10.1103/PhysRevLett.88.235501",
631 publisher = "American Physical Society",
632 notes = "first time ffcd, fourfold coordinated point defect in
637 title = "Ab initio molecular dynamics simulation of
638 self-interstitial diffusion in silicon",
639 author = "Beat Sahli and Wolfgang Fichtner",
640 journal = "Phys. Rev. B",
647 doi = "10.1103/PhysRevB.72.245210",
648 publisher = "American Physical Society",
649 notes = "si self int, diffusion, barrier height, voronoi
654 title = "Ab initio calculations of the interaction between
655 native point defects in silicon",
656 journal = "Mater. Sci. Eng., B",
661 note = "EMRS 2005, Symposium D - Materials Science and Device
662 Issues for Future Technologies",
664 doi = "DOI: 10.1016/j.mseb.2005.08.072",
665 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
666 author = "G. Hobler and G. Kresse",
667 notes = "vasp intrinsic si defect interaction study, capture
672 title = "Ab initio study of self-diffusion in silicon over a
673 wide temperature range: Point defect states and
674 migration mechanisms",
675 author = "Shangyi Ma and Shaoqing Wang",
676 journal = "Phys. Rev. B",
683 doi = "10.1103/PhysRevB.81.193203",
684 publisher = "American Physical Society",
685 notes = "si self interstitial diffusion + refs",
689 title = "Atomistic simulations on the thermal stability of the
690 antisite pair in 3{C}- and 4{H}-Si{C}",
691 author = "M. Posselt and F. Gao and W. J. Weber",
692 journal = "Phys. Rev. B",
699 doi = "10.1103/PhysRevB.73.125206",
700 publisher = "American Physical Society",
704 title = "Correlation between self-diffusion in Si and the
705 migration mechanisms of vacancies and
706 self-interstitials: An atomistic study",
707 author = "M. Posselt and F. Gao and H. Bracht",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.78.035208",
716 publisher = "American Physical Society",
717 notes = "si self-interstitial and vacancy diffusion, stillinger
722 title = "Ab initio and empirical-potential studies of defect
723 properties in $3{C}-Si{C}$",
724 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
726 journal = "Phys. Rev. B",
733 doi = "10.1103/PhysRevB.64.245208",
734 publisher = "American Physical Society",
735 notes = "defects in 3c-sic",
739 title = "Empirical potential approach for defect properties in
741 journal = "Nucl. Instrum. Methods Phys. Res. B",
748 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
749 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
750 author = "Fei Gao and William J. Weber",
751 keywords = "Empirical potential",
752 keywords = "Defect properties",
753 keywords = "Silicon carbide",
754 keywords = "Computer simulation",
755 notes = "sic potential, brenner type, like erhart/albe",
759 title = "Atomistic study of intrinsic defect migration in
761 author = "Fei Gao and William J. Weber and M. Posselt and V.
763 journal = "Phys. Rev. B",
770 doi = "10.1103/PhysRevB.69.245205",
771 publisher = "American Physical Society",
772 notes = "defect migration in sic",
776 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
779 title = "Ab Initio atomic simulations of antisite pair recovery
780 in cubic silicon carbide",
783 journal = "Appl. Phys. Lett.",
789 keywords = "ab initio calculations; silicon compounds; antisite
790 defects; wide band gap semiconductors; molecular
791 dynamics method; density functional theory;
792 electron-hole recombination; photoluminescence;
793 impurities; diffusion",
794 URL = "http://link.aip.org/link/?APL/90/221915/1",
795 doi = "10.1063/1.2743751",
798 @Article{mattoni2002,
799 title = "Self-interstitial trapping by carbon complexes in
800 crystalline silicon",
801 author = "A. Mattoni and F. Bernardini and L. Colombo",
802 journal = "Phys. Rev. B",
809 doi = "10.1103/PhysRevB.66.195214",
810 publisher = "American Physical Society",
811 notes = "c in c-si, diffusion, interstitial configuration +
812 links, interaction of carbon and silicon interstitials,
813 tersoff suitability",
817 title = "Calculations of Silicon Self-Interstitial Defects",
818 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
820 journal = "Phys. Rev. Lett.",
823 pages = "2351--2354",
827 doi = "10.1103/PhysRevLett.83.2351",
828 publisher = "American Physical Society",
829 notes = "nice images of the defects, si defect overview +
834 title = "Identification of the migration path of interstitial
836 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
837 journal = "Phys. Rev. B",
840 pages = "7439--7442",
844 doi = "10.1103/PhysRevB.50.7439",
845 publisher = "American Physical Society",
846 notes = "carbon interstitial migration path shown, 001 c-si
851 title = "Theory of carbon-carbon pairs in silicon",
852 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
853 journal = "Phys. Rev. B",
856 pages = "9845--9850",
860 doi = "10.1103/PhysRevB.58.9845",
861 publisher = "American Physical Society",
862 notes = "c_i c_s pair configuration, theoretical results",
866 title = "Bistable interstitial-carbon--substitutional-carbon
868 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
870 journal = "Phys. Rev. B",
873 pages = "5765--5783",
877 doi = "10.1103/PhysRevB.42.5765",
878 publisher = "American Physical Society",
879 notes = "c_i c_s pair configuration, experimental results",
883 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
884 Shifeng Lu and Xiang-Yang Liu",
886 title = "Ab initio modeling and experimental study of {C}--{B}
890 journal = "Appl. Phys. Lett.",
894 keywords = "silicon; boron; carbon; elemental semiconductors;
895 impurity-defect interactions; ab initio calculations;
896 secondary ion mass spectra; diffusion; interstitials",
897 URL = "http://link.aip.org/link/?APL/80/52/1",
898 doi = "10.1063/1.1430505",
899 notes = "c-c 100 split, lower as a and b states of capaz",
903 title = "Ab initio investigation of carbon-related defects in
905 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
907 journal = "Phys. Rev. B",
910 pages = "12554--12557",
914 doi = "10.1103/PhysRevB.47.12554",
915 publisher = "American Physical Society",
916 notes = "c interstitials in crystalline silicon",
920 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
922 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
923 Sokrates T. Pantelides",
924 journal = "Phys. Rev. Lett.",
927 pages = "1814--1817",
931 doi = "10.1103/PhysRevLett.52.1814",
932 publisher = "American Physical Society",
933 notes = "microscopic theory diffusion silicon dft migration
938 title = "Unified Approach for Molecular Dynamics and
939 Density-Functional Theory",
940 author = "R. Car and M. Parrinello",
941 journal = "Phys. Rev. Lett.",
944 pages = "2471--2474",
948 doi = "10.1103/PhysRevLett.55.2471",
949 publisher = "American Physical Society",
950 notes = "car parrinello method, dft and md",
954 title = "Short-range order, bulk moduli, and physical trends in
955 c-$Si1-x$$Cx$ alloys",
956 author = "P. C. Kelires",
957 journal = "Phys. Rev. B",
960 pages = "8784--8787",
964 doi = "10.1103/PhysRevB.55.8784",
965 publisher = "American Physical Society",
966 notes = "c strained si, montecarlo md, bulk moduli, next
971 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
972 Application to the $Si1-x-yGexCy$ System",
973 author = "P. C. Kelires",
974 journal = "Phys. Rev. Lett.",
977 pages = "1114--1117",
981 doi = "10.1103/PhysRevLett.75.1114",
982 publisher = "American Physical Society",
983 notes = "mc md, strain compensation in si ge by c insertion",
987 title = "Low temperature electron irradiation of silicon
989 journal = "Solid State Communications",
996 doi = "DOI: 10.1016/0038-1098(70)90074-8",
997 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
998 author = "A. R. Bean and R. C. Newman",
1002 author = "F. Durand and J. Duby",
1003 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1004 title = "Carbon solubility in solid and liquid silicon—{A}
1005 review with reference to eutectic equilibrium",
1006 journal = "Journal of Phase Equilibria",
1007 publisher = "Springer New York",
1009 keyword = "Chemistry and Materials Science",
1013 URL = "http://dx.doi.org/10.1361/105497199770335956",
1014 note = "10.1361/105497199770335956",
1016 notes = "better c solubility limit in silicon",
1020 title = "{EPR} Observation of the Isolated Interstitial Carbon
1022 author = "G. D. Watkins and K. L. Brower",
1023 journal = "Phys. Rev. Lett.",
1026 pages = "1329--1332",
1030 doi = "10.1103/PhysRevLett.36.1329",
1031 publisher = "American Physical Society",
1032 notes = "epr observations of 100 interstitial carbon atom in
1037 title = "{EPR} identification of the single-acceptor state of
1038 interstitial carbon in silicon",
1039 author = "L. W. Song and G. D. Watkins",
1040 journal = "Phys. Rev. B",
1043 pages = "5759--5764",
1047 doi = "10.1103/PhysRevB.42.5759",
1048 publisher = "American Physical Society",
1049 notes = "carbon diffusion in silicon",
1053 author = "A K Tipping and R C Newman",
1054 title = "The diffusion coefficient of interstitial carbon in
1056 journal = "Semicond. Sci. Technol.",
1060 URL = "http://stacks.iop.org/0268-1242/2/315",
1062 notes = "diffusion coefficient of carbon interstitials in
1067 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1070 title = "Annealing behavior of Me{V} implanted carbon in
1074 journal = "Journal of Applied Physics",
1077 pages = "3815--3820",
1078 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1079 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1081 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1082 doi = "10.1063/1.354474",
1083 notes = "c at interstitial location for rt implantation in si",
1087 title = "Carbon incorporation into Si at high concentrations by
1088 ion implantation and solid phase epitaxy",
1089 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1090 Picraux and J. K. Watanabe and J. W. Mayer",
1091 journal = "J. Appl. Phys.",
1096 doi = "10.1063/1.360806",
1097 notes = "strained silicon, carbon supersaturation",
1100 @Article{laveant2002,
1101 title = "Epitaxy of carbon-rich silicon with {MBE}",
1102 journal = "Mater. Sci. Eng., B",
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1109 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1110 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1112 notes = "low c in si, tensile stress to compensate compressive
1113 stress, avoid sic precipitation",
1117 title = "The formation of swirl defects in silicon by
1118 agglomeration of self-interstitials",
1119 journal = "Journal of Crystal Growth",
1126 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1127 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1128 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1129 notes = "b-swirl: si + c interstitial agglomerates, c-si
1134 title = "Microdefects in silicon and their relation to point
1136 journal = "Journal of Crystal Growth",
1143 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1144 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1145 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1146 notes = "swirl review",
1150 author = "P. Werner and S. Eichler and G. Mariani and R.
1151 K{\"{o}}gler and W. Skorupa",
1152 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1153 silicon by transmission electron microscopy",
1156 journal = "Appl. Phys. Lett.",
1160 keywords = "silicon; ion implantation; carbon; crystal defects;
1161 transmission electron microscopy; annealing; positron
1162 annihilation; secondary ion mass spectroscopy; buried
1163 layers; precipitation",
1164 URL = "http://link.aip.org/link/?APL/70/252/1",
1165 doi = "10.1063/1.118381",
1166 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1170 @InProceedings{werner96,
1171 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1173 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1174 International Conference on",
1175 title = "{TEM} investigation of {C}-Si defects in carbon
1182 doi = "10.1109/IIT.1996.586497",
1184 notes = "c-si agglomerates dumbbells",
1188 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1191 title = "Carbon diffusion in silicon",
1194 journal = "Appl. Phys. Lett.",
1197 pages = "2465--2467",
1198 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1199 secondary ion mass spectra; semiconductor epitaxial
1200 layers; annealing; impurity-defect interactions;
1201 impurity distribution",
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1203 doi = "10.1063/1.122483",
1204 notes = "c diffusion in si, kick out mechnism",
1208 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1210 title = "Self-interstitial enhanced carbon diffusion in
1214 journal = "Applied Physics Letters",
1218 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1219 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1220 TEMPERATURE; IMPURITIES",
1221 URL = "http://link.aip.org/link/?APL/45/268/1",
1222 doi = "10.1063/1.95167",
1223 notes = "c diffusion due to si self-interstitials",
1227 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1230 title = "Characterization of SiGe/Si heterostructures formed by
1231 Ge[sup + ] and {C}[sup + ] implantation",
1234 journal = "Applied Physics Letters",
1237 pages = "2345--2347",
1238 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1239 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1240 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1241 EPITAXY; CARBON IONS; GERMANIUM IONS",
1242 URL = "http://link.aip.org/link/?APL/57/2345/1",
1243 doi = "10.1063/1.103888",
1247 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1248 Doyle and S. T. Picraux and J. W. Mayer",
1250 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1253 journal = "Applied Physics Letters",
1256 pages = "2786--2788",
1257 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1258 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1259 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1260 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1261 EPITAXY; AMORPHIZATION",
1262 URL = "http://link.aip.org/link/?APL/63/2786/1",
1263 doi = "10.1063/1.110334",
1267 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1268 Legoues and J. Angilello and F. Cardone",
1270 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1271 strained layer superlattices",
1274 journal = "Applied Physics Letters",
1277 pages = "2758--2760",
1278 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1279 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1280 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1281 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1282 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1283 URL = "http://link.aip.org/link/?APL/60/2758/1",
1284 doi = "10.1063/1.106868",
1288 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1289 Picraux and J. K. Watanabe and J. W. Mayer",
1291 title = "Precipitation and relaxation in strained Si[sub 1 -
1292 y]{C}[sub y]/Si heterostructures",
1295 journal = "J. Appl. Phys.",
1298 pages = "3656--3668",
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1301 doi = "10.1063/1.357429",
1302 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1303 precipitation by substitutional carbon, coherent prec,
1304 coherent to incoherent transition strain vs interface
1309 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1312 title = "Investigation of the high temperature behavior of
1313 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1316 journal = "J. Appl. Phys.",
1319 pages = "1934--1937",
1320 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1321 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1322 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1323 TEMPERATURE RANGE 04001000 K",
1324 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1325 doi = "10.1063/1.358826",
1329 title = "Prospects for device implementation of wide band gap
1331 author = "J. H. Edgar",
1332 journal = "J. Mater. Res.",
1337 doi = "10.1557/JMR.1992.0235",
1338 notes = "properties wide band gap semiconductor, sic
1342 @Article{zirkelbach2007,
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1345 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
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1359 @Article{zirkelbach2006,
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1365 journal = "Nucl. Instr. and Meth. B",
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1381 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1383 journal = "Comp. Mater. Sci.",
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1395 @Article{zirkelbach09,
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1403 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1404 Silicon Materials Research for Electronic and
1405 Photovoltaic Applications",
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1423 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1459 author = "J. K. N. Lindner and A. Frohnwieser and B.
1460 Rauschenbach and B. Stritzker",
1461 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1463 journal = "MRS Online Proceedings Library",
1468 doi = "10.1557/PROC-354-171",
1469 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1470 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1471 notes = "first time ibs at moderate temperatures",
1475 title = "Formation of buried epitaxial silicon carbide layers
1476 in silicon by ion beam synthesis",
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1486 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1487 Götz and A. Frohnwieser and B. Rauschenbach and B.
1489 notes = "dose window",
1492 @Article{calcagno96,
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1495 journal = "Nuclear Instruments and Methods in Physics Research
1496 Section B: Beam Interactions with Materials and Atoms",
1501 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
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1506 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
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1508 notes = "dose window, graphitic bonds",
1512 title = "Mechanisms of Si{C} Formation in the Ion Beam
1513 Synthesis of 3{C}-Si{C} Layers in Silicon",
1514 journal = "Materials Science Forum",
1519 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1520 URL = "http://www.scientific.net/MSF.264-268.215",
1521 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1522 notes = "intermediate temperature for sharp interface + good
1527 title = "Controlling the density distribution of Si{C}
1528 nanocrystals for the ion beam synthesis of buried Si{C}
1530 journal = "Nucl. Instrum. Methods Phys. Res. B",
1537 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1538 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1539 author = "J. K. N. Lindner and B. Stritzker",
1540 notes = "two-step implantation process",
1543 @Article{lindner99_2,
1544 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1546 journal = "Nucl. Instrum. Methods Phys. Res. B",
1552 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1553 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1554 author = "J. K. N. Lindner and B. Stritzker",
1555 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1559 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1560 Basic physical processes",
1561 journal = "Nucl. Instrum. Methods Phys. Res. B",
1568 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1569 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1570 author = "J{\"{o}}rg K. N. Lindner",
1574 title = "High-dose carbon implantations into silicon:
1575 fundamental studies for new technological tricks",
1576 author = "J. K. N. Lindner",
1577 journal = "Appl. Phys. A",
1581 doi = "10.1007/s00339-002-2062-8",
1582 notes = "ibs, burried sic layers",
1586 title = "On the balance between ion beam induced nanoparticle
1587 formation and displacive precipitate resolution in the
1589 journal = "Mater. Sci. Eng., C",
1594 note = "Current Trends in Nanoscience - from Materials to
1597 doi = "DOI: 10.1016/j.msec.2005.09.099",
1598 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1599 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1601 notes = "c int diffusion barrier",
1605 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1606 application in buffer layer for Ga{N} epitaxial
1608 journal = "Applied Surface Science",
1613 note = "APHYS'03 Special Issue",
1615 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1616 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1617 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1618 and S. Nishio and K. Yasuda and Y. Ishigami",
1619 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1622 @Article{yamamoto04,
1623 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1624 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1625 implantation into Si(1 1 1) substrate",
1626 journal = "Journal of Crystal Growth",
1631 note = "Proceedings of the 11th Biennial (US) Workshop on
1632 Organometallic Vapor Phase Epitaxy (OMVPE)",
1634 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1635 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
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1637 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1638 notes = "gan on 3c-sic",
1642 title = "Substrates for gallium nitride epitaxy",
1643 journal = "Materials Science and Engineering: R: Reports",
1650 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1651 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1652 author = "L. Liu and J. H. Edgar",
1653 notes = "gan substrates",
1656 @Article{takeuchi91,
1657 title = "Growth of single crystalline Ga{N} film on Si
1658 substrate using 3{C}-Si{C} as an intermediate layer",
1659 journal = "Journal of Crystal Growth",
1666 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1667 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1668 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1669 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1670 notes = "gan on 3c-sic (first time?)",
1674 author = "B. J. Alder and T. E. Wainwright",
1675 title = "Phase Transition for a Hard Sphere System",
1678 journal = "J. Chem. Phys.",
1681 pages = "1208--1209",
1682 URL = "http://link.aip.org/link/?JCP/27/1208/1",
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1687 author = "B. J. Alder and T. E. Wainwright",
1688 title = "Studies in Molecular Dynamics. {I}. General Method",
1691 journal = "J. Chem. Phys.",
1695 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1699 @Article{horsfield96,
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1701 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1702 D. G. Pettifor and M. Aoki",
1703 journal = "Phys. Rev. B",
1706 pages = "12694--12712",
1710 doi = "10.1103/PhysRevB.53.12694",
1711 publisher = "American Physical Society",
1715 title = "Empirical chemical pseudopotential theory of molecular
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1717 author = "G. C. Abell",
1718 journal = "Phys. Rev. B",
1721 pages = "6184--6196",
1725 doi = "10.1103/PhysRevB.31.6184",
1726 publisher = "American Physical Society",
1729 @Article{tersoff_si1,
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1732 author = "J. Tersoff",
1733 journal = "Phys. Rev. Lett.",
1740 doi = "10.1103/PhysRevLett.56.632",
1741 publisher = "American Physical Society",
1745 title = "Development of a many-body Tersoff-type potential for
1747 author = "Brian W. Dodson",
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1751 pages = "2795--2798",
1755 doi = "10.1103/PhysRevB.35.2795",
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1759 @Article{tersoff_si2,
1760 title = "New empirical approach for the structure and energy of
1762 author = "J. Tersoff",
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1766 pages = "6991--7000",
1770 doi = "10.1103/PhysRevB.37.6991",
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1774 @Article{tersoff_si3,
1775 title = "Empirical interatomic potential for silicon with
1776 improved elastic properties",
1777 author = "J. Tersoff",
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1781 pages = "9902--9905",
1785 doi = "10.1103/PhysRevB.38.9902",
1786 publisher = "American Physical Society",
1790 title = "Empirical Interatomic Potential for Carbon, with
1791 Applications to Amorphous Carbon",
1792 author = "J. Tersoff",
1793 journal = "Phys. Rev. Lett.",
1796 pages = "2879--2882",
1800 doi = "10.1103/PhysRevLett.61.2879",
1801 publisher = "American Physical Society",
1805 title = "Modeling solid-state chemistry: Interatomic potentials
1806 for multicomponent systems",
1807 author = "J. Tersoff",
1808 journal = "Phys. Rev. B",
1811 pages = "5566--5568",
1815 doi = "10.1103/PhysRevB.39.5566",
1816 publisher = "American Physical Society",
1820 title = "Carbon defects and defect reactions in silicon",
1821 author = "J. Tersoff",
1822 journal = "Phys. Rev. Lett.",
1825 pages = "1757--1760",
1829 doi = "10.1103/PhysRevLett.64.1757",
1830 publisher = "American Physical Society",
1834 title = "Point defects and dopant diffusion in silicon",
1835 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1836 journal = "Rev. Mod. Phys.",
1843 doi = "10.1103/RevModPhys.61.289",
1844 publisher = "American Physical Society",
1848 title = "Silicon carbide: synthesis and processing",
1849 journal = "Nucl. Instrum. Methods Phys. Res. B",
1854 note = "Radiation Effects in Insulators",
1856 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1862 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1863 Palmour and J. A. Edmond",
1864 journal = "Proceedings of the IEEE",
1865 title = "Thin film deposition and microelectronic and
1866 optoelectronic device fabrication and characterization
1867 in monocrystalline alpha and beta silicon carbide",
1873 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1874 diode;SiC;dry etching;electrical
1875 contacts;etching;impurity incorporation;optoelectronic
1876 device fabrication;solid-state devices;surface
1877 chemistry;Schottky effect;Schottky gate field effect
1878 transistors;Schottky-barrier
1879 diodes;etching;heterojunction bipolar
1880 transistors;insulated gate field effect
1881 transistors;light emitting diodes;semiconductor
1882 materials;semiconductor thin films;silicon compounds;",
1883 doi = "10.1109/5.90132",
1885 notes = "sic growth methods",
1889 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1890 Lin and B. Sverdlov and M. Burns",
1892 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1893 ZnSe-based semiconductor device technologies",
1896 journal = "J. Appl. Phys.",
1899 pages = "1363--1398",
1900 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1901 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1902 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1904 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1905 doi = "10.1063/1.358463",
1906 notes = "sic intro, properties",
1910 author = "Noch Unbekannt",
1911 title = "How to find references",
1912 journal = "Journal of Applied References",
1919 title = "Atomistic simulation of thermomechanical properties of
1921 author = "Meijie Tang and Sidney Yip",
1922 journal = "Phys. Rev. B",
1925 pages = "15150--15159",
1928 doi = "10.1103/PhysRevB.52.15150",
1929 notes = "modified tersoff, scale cutoff with volume, promising
1930 tersoff reparametrization",
1931 publisher = "American Physical Society",
1935 title = "Silicon carbide as a new {MEMS} technology",
1936 journal = "Sensors and Actuators A: Physical",
1942 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1943 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1944 author = "Pasqualina M. Sarro",
1946 keywords = "Silicon carbide",
1947 keywords = "Micromachining",
1948 keywords = "Mechanical stress",
1952 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1953 semiconductor for high-temperature applications: {A}
1955 journal = "Solid-State Electronics",
1958 pages = "1409--1422",
1961 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1962 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1963 author = "J. B. Casady and R. W. Johnson",
1964 notes = "sic intro",
1967 @Article{giancarli98,
1968 title = "Design requirements for Si{C}/Si{C} composites
1969 structural material in fusion power reactor blankets",
1970 journal = "Fusion Engineering and Design",
1976 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1977 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1978 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1979 Marois and N. B. Morley and J. F. Salavy",
1983 title = "Electrical and optical characterization of Si{C}",
1984 journal = "Physica B: Condensed Matter",
1990 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1991 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1992 author = "G. Pensl and W. J. Choyke",
1996 title = "Investigation of growth processes of ingots of silicon
1997 carbide single crystals",
1998 journal = "J. Cryst. Growth",
2003 notes = "modified lely process",
2005 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2006 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2007 author = "Yu. M. Tairov and V. F. Tsvetkov",
2011 title = "General principles of growing large-size single
2012 crystals of various silicon carbide polytypes",
2013 journal = "Journal of Crystal Growth",
2020 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2021 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2022 author = "Yu.M. Tairov and V. F. Tsvetkov",
2026 title = "Si{C} boule growth by sublimation vapor transport",
2027 journal = "Journal of Crystal Growth",
2034 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2035 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2036 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2037 R. H. Hopkins and W. J. Choyke",
2041 title = "Growth of large Si{C} single crystals",
2042 journal = "Journal of Crystal Growth",
2049 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2050 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2051 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2052 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2057 title = "Control of polytype formation by surface energy
2058 effects during the growth of Si{C} monocrystals by the
2059 sublimation method",
2060 journal = "Journal of Crystal Growth",
2067 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2068 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2069 author = "R. A. Stein and P. Lanig",
2070 notes = "6h and 4h, sublimation technique",
2074 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2077 title = "Production of large-area single-crystal wafers of
2078 cubic Si{C} for semiconductor devices",
2081 journal = "Appl. Phys. Lett.",
2085 keywords = "silicon carbides; layers; chemical vapor deposition;
2087 URL = "http://link.aip.org/link/?APL/42/460/1",
2088 doi = "10.1063/1.93970",
2089 notes = "cvd of 3c-sic on si, sic buffer layer",
2093 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2094 and Hiroyuki Matsunami",
2096 title = "Epitaxial growth and electric characteristics of cubic
2100 journal = "J. Appl. Phys.",
2103 pages = "4889--4893",
2104 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2105 doi = "10.1063/1.338355",
2106 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2111 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2113 title = "Growth and Characterization of Cubic Si{C}
2114 Single-Crystal Films on Si",
2117 journal = "Journal of The Electrochemical Society",
2120 pages = "1558--1565",
2121 keywords = "semiconductor materials; silicon compounds; carbon
2122 compounds; crystal morphology; electron mobility",
2123 URL = "http://link.aip.org/link/?JES/134/1558/1",
2124 doi = "10.1149/1.2100708",
2125 notes = "blue light emitting diodes (led)",
2128 @Article{powell87_2,
2129 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2130 C. M. Chorey and T. T. Cheng and P. Pirouz",
2132 title = "Improved beta-Si{C} heteroepitaxial films using
2133 off-axis Si substrates",
2136 journal = "Applied Physics Letters",
2140 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2141 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2142 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2143 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2144 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2145 URL = "http://link.aip.org/link/?APL/51/823/1",
2146 doi = "10.1063/1.98824",
2147 notes = "improved sic on off-axis si substrates, reduced apbs",
2151 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2152 journal = "Journal of Crystal Growth",
2159 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2160 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2161 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2163 notes = "step-controlled epitaxy model",
2167 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2168 and Hiroyuki Matsunami",
2169 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2173 journal = "J. Appl. Phys.",
2177 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2178 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2180 URL = "http://link.aip.org/link/?JAP/73/726/1",
2181 doi = "10.1063/1.353329",
2182 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2185 @Article{powell90_2,
2186 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2187 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2188 Yoganathan and J. Yang and P. Pirouz",
2190 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2191 vicinal (0001) 6{H}-Si{C} wafers",
2194 journal = "Applied Physics Letters",
2197 pages = "1442--1444",
2198 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2199 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2200 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2201 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2202 URL = "http://link.aip.org/link/?APL/56/1442/1",
2203 doi = "10.1063/1.102492",
2204 notes = "cvd of 6h-sic on 6h-sic",
2208 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2210 title = "Chemical vapor deposition and characterization of
2211 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2215 journal = "Journal of Applied Physics",
2218 pages = "2672--2679",
2219 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2220 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2221 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2222 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2223 PHASE EPITAXY; CRYSTAL ORIENTATION",
2224 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2225 doi = "10.1063/1.341608",
2229 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2230 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2231 Yoganathan and J. Yang and P. Pirouz",
2233 title = "Growth of improved quality 3{C}-Si{C} films on
2234 6{H}-Si{C} substrates",
2237 journal = "Appl. Phys. Lett.",
2240 pages = "1353--1355",
2241 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2242 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2243 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2245 URL = "http://link.aip.org/link/?APL/56/1353/1",
2246 doi = "10.1063/1.102512",
2247 notes = "cvd of 3c-sic on 6h-sic",
2251 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2252 Rozgonyi and K. L. More",
2254 title = "An examination of double positioning boundaries and
2255 interface misfit in beta-Si{C} films on alpha-Si{C}
2259 journal = "Journal of Applied Physics",
2262 pages = "2645--2650",
2263 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2264 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2265 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2266 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2267 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2268 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2269 doi = "10.1063/1.341004",
2273 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2274 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2275 and W. J. Choyke and L. Clemen and M. Yoganathan",
2277 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2278 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2281 journal = "Applied Physics Letters",
2285 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2286 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2287 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2288 URL = "http://link.aip.org/link/?APL/59/333/1",
2289 doi = "10.1063/1.105587",
2293 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2294 Thokala and M. J. Loboda",
2296 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2297 films on 6{H}-Si{C} by chemical vapor deposition from
2301 journal = "J. Appl. Phys.",
2304 pages = "1271--1273",
2305 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2306 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2308 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2309 doi = "10.1063/1.360368",
2310 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2314 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2315 properties of its p-n junction",
2316 journal = "Journal of Crystal Growth",
2323 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2325 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2327 notes = "first time ssmbe of 3c-sic on 6h-sic",
2331 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2332 [alpha]-Si{C}(0001) at low temperatures by solid-source
2333 molecular beam epitaxy",
2334 journal = "J. Cryst. Growth",
2340 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2341 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2342 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2343 Schr{\"{o}}ter and W. Richter",
2344 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2347 @Article{fissel95_apl,
2348 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2350 title = "Low-temperature growth of Si{C} thin films on Si and
2351 6{H}--Si{C} by solid-source molecular beam epitaxy",
2354 journal = "Appl. Phys. Lett.",
2357 pages = "3182--3184",
2358 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2360 URL = "http://link.aip.org/link/?APL/66/3182/1",
2361 doi = "10.1063/1.113716",
2362 notes = "mbe 3c-sic on si and 6h-sic",
2366 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2367 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2369 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2370 migration enhanced epitaxy controlled to an atomic
2371 level using surface superstructures",
2374 journal = "Applied Physics Letters",
2377 pages = "1204--1206",
2378 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2379 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2381 URL = "http://link.aip.org/link/?APL/68/1204/1",
2382 doi = "10.1063/1.115969",
2383 notes = "ss mbe sic, superstructure, reconstruction",
2387 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2388 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2389 C. M. Bertoni and A. Catellani",
2390 journal = "Phys. Rev. Lett.",
2397 doi = "10.1103/PhysRevLett.91.136101",
2398 publisher = "American Physical Society",
2399 notes = "dft calculations mbe sic growth",
2403 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2405 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2409 journal = "Appl. Phys. Lett.",
2413 URL = "http://link.aip.org/link/?APL/18/509/1",
2414 doi = "10.1063/1.1653516",
2415 notes = "first time sic by ibs, follow cites for precipitation
2420 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2421 and E. V. Lubopytova",
2422 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2423 by ion implantation",
2424 publisher = "Taylor \& Francis",
2426 journal = "Radiation Effects",
2430 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2431 notes = "3c-sic for different temperatures, amorphous, poly,
2432 single crystalline",
2435 @Article{akimchenko80,
2436 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2437 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2438 title = "Structure and optical properties of silicon implanted
2439 by high doses of 70 and 310 ke{V} carbon ions",
2440 publisher = "Taylor \& Francis",
2442 journal = "Radiation Effects",
2446 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2447 notes = "3c-sic nucleation by thermal spikes",
2451 title = "Structure and annealing properties of silicon carbide
2452 thin layers formed by implantation of carbon ions in
2454 journal = "Thin Solid Films",
2461 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2462 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2463 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2468 title = "Characteristics of the synthesis of [beta]-Si{C} by
2469 the implantation of carbon ions into silicon",
2470 journal = "Thin Solid Films",
2477 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2478 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2479 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2484 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2485 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2486 Chater and J. A. Iulner and J. Davis",
2487 title = "Formation mechanisms and structures of insulating
2488 compounds formed in silicon by ion beam synthesis",
2489 publisher = "Taylor \& Francis",
2491 journal = "Radiation Effects",
2495 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2496 notes = "ibs, comparison with sio and sin, higher temp or time,
2497 no c redistribution",
2501 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2502 J. Davis and G. E. Celler",
2504 title = "Formation of buried layers of beta-Si{C} using ion
2505 beam synthesis and incoherent lamp annealing",
2508 journal = "Appl. Phys. Lett.",
2511 pages = "2242--2244",
2512 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2513 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2514 URL = "http://link.aip.org/link/?APL/51/2242/1",
2515 doi = "10.1063/1.98953",
2516 notes = "nice tem images, sic by ibs",
2520 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2521 and M. Olivier and A. M. Papon and G. Rolland",
2523 title = "High-temperature ion beam synthesis of cubic Si{C}",
2526 journal = "Journal of Applied Physics",
2529 pages = "2908--2912",
2530 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2531 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2532 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2533 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2534 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2535 REACTIONS; MONOCRYSTALS",
2536 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2537 doi = "10.1063/1.346092",
2538 notes = "triple energy implantation to overcome high annealing
2543 author = "R. I. Scace and G. A. Slack",
2545 title = "Solubility of Carbon in Silicon and Germanium",
2548 journal = "J. Chem. Phys.",
2551 pages = "1551--1555",
2552 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2553 doi = "10.1063/1.1730236",
2554 notes = "solubility of c in c-si, si-c phase diagram",
2558 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2560 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2561 Laboratories Eindhoven Netherlands Eindhoven
2563 title = "Boron implantations in silicon: {A} comparison of
2564 charge carrier and boron concentration profiles",
2565 journal = "Applied Physics A: Materials Science \& Processing",
2566 publisher = "Springer Berlin / Heidelberg",
2568 keyword = "Physics and Astronomy",
2572 URL = "http://dx.doi.org/10.1007/BF00884267",
2573 note = "10.1007/BF00884267",
2575 notes = "first time ted (only for boron?)",
2579 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2582 title = "Rapid annealing and the anomalous diffusion of ion
2583 implanted boron into silicon",
2586 journal = "Applied Physics Letters",
2590 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2591 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2592 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2593 URL = "http://link.aip.org/link/?APL/50/416/1",
2594 doi = "10.1063/1.98160",
2595 notes = "ted of boron in si",
2599 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2602 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2603 time, and matrix dependence of atomic and electrical
2607 journal = "Journal of Applied Physics",
2610 pages = "6191--6198",
2611 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2612 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2613 CRYSTALS; AMORPHIZATION",
2614 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2615 doi = "10.1063/1.346910",
2616 notes = "ted of boron in si",
2620 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2621 F. W. Saris and W. Vandervorst",
2623 title = "Role of {C} and {B} clusters in transient diffusion of
2627 journal = "Appl. Phys. Lett.",
2630 pages = "1150--1152",
2631 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2632 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2634 URL = "http://link.aip.org/link/?APL/68/1150/1",
2635 doi = "10.1063/1.115706",
2636 notes = "suppression of transient enhanced diffusion (ted)",
2640 title = "Implantation and transient boron diffusion: the role
2641 of the silicon self-interstitial",
2642 journal = "Nucl. Instrum. Methods Phys. Res. B",
2647 note = "Selected Papers of the Tenth International Conference
2648 on Ion Implantation Technology (IIT '94)",
2650 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2651 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2652 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2657 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2658 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2659 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2662 title = "Physical mechanisms of transient enhanced dopant
2663 diffusion in ion-implanted silicon",
2666 journal = "J. Appl. Phys.",
2669 pages = "6031--6050",
2670 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2671 doi = "10.1063/1.364452",
2672 notes = "ted, transient enhanced diffusion, c silicon trap",
2676 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2678 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2679 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2682 journal = "Appl. Phys. Lett.",
2686 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2687 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2688 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2690 URL = "http://link.aip.org/link/?APL/64/324/1",
2691 doi = "10.1063/1.111195",
2692 notes = "beta sic nano crystals in si, mbe, annealing",
2696 author = "Richard A. Soref",
2698 title = "Optical band gap of the ternary semiconductor Si[sub 1
2699 - x - y]Ge[sub x]{C}[sub y]",
2702 journal = "J. Appl. Phys.",
2705 pages = "2470--2472",
2706 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2707 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2709 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2710 doi = "10.1063/1.349403",
2711 notes = "band gap of strained si by c",
2715 author = "E Kasper",
2716 title = "Superlattices of group {IV} elements, a new
2717 possibility to produce direct band gap material",
2718 journal = "Physica Scripta",
2721 URL = "http://stacks.iop.org/1402-4896/T35/232",
2723 notes = "superlattices, convert indirect band gap into a
2728 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2731 title = "Growth and strain compensation effects in the ternary
2732 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2735 journal = "Applied Physics Letters",
2738 pages = "3033--3035",
2739 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2740 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2741 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2742 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2744 URL = "http://link.aip.org/link/?APL/60/3033/1",
2745 doi = "10.1063/1.106774",
2749 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2752 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2756 journal = "J. Vac. Sci. Technol. B",
2759 pages = "1064--1068",
2760 location = "Ottawa (Canada)",
2761 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2762 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2763 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2764 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2765 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2766 doi = "10.1116/1.587008",
2767 notes = "substitutional c in si by mbe",
2770 @Article{powell93_2,
2771 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2772 of the ternary system",
2773 journal = "Journal of Crystal Growth",
2780 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2781 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2782 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2787 author = "H. J. Osten",
2788 title = "Modification of Growth Modes in Lattice-Mismatched
2789 Epitaxial Systems: Si/Ge",
2790 journal = "physica status solidi (a)",
2793 publisher = "WILEY-VCH Verlag",
2795 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2796 doi = "10.1002/pssa.2211450203",
2801 @Article{dietrich94,
2802 title = "Lattice distortion in a strain-compensated
2803 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2804 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2805 Methfessel and P. Zaumseil",
2806 journal = "Phys. Rev. B",
2809 pages = "17185--17190",
2813 doi = "10.1103/PhysRevB.49.17185",
2814 publisher = "American Physical Society",
2818 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2820 title = "Growth of an inverse tetragonal distorted SiGe layer
2821 on Si(001) by adding small amounts of carbon",
2824 journal = "Applied Physics Letters",
2827 pages = "3440--3442",
2828 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2829 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2830 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2832 URL = "http://link.aip.org/link/?APL/64/3440/1",
2833 doi = "10.1063/1.111235",
2834 notes = "inversely strained / distorted heterostructure",
2838 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2839 LeGoues and J. C. Tsang and F. Cardone",
2841 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2842 molecular beam epitaxy",
2845 journal = "Applied Physics Letters",
2849 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2850 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2851 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2852 FILM GROWTH; MICROSTRUCTURE",
2853 URL = "http://link.aip.org/link/?APL/60/356/1",
2854 doi = "10.1063/1.106655",
2858 author = "H. J. Osten and J. Griesche and S. Scalese",
2860 title = "Substitutional carbon incorporation in epitaxial
2861 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2862 molecular beam epitaxy",
2865 journal = "Appl. Phys. Lett.",
2869 keywords = "molecular beam epitaxial growth; semiconductor growth;
2870 wide band gap semiconductors; interstitials; silicon
2872 URL = "http://link.aip.org/link/?APL/74/836/1",
2873 doi = "10.1063/1.123384",
2874 notes = "substitutional c in si by mbe",
2878 author = "M. Born and R. Oppenheimer",
2879 title = "Zur Quantentheorie der Molekeln",
2880 journal = "Annalen der Physik",
2883 publisher = "WILEY-VCH Verlag",
2885 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2886 doi = "10.1002/andp.19273892002",
2891 @Article{hohenberg64,
2892 title = "Inhomogeneous Electron Gas",
2893 author = "P. Hohenberg and W. Kohn",
2894 journal = "Phys. Rev.",
2897 pages = "B864--B871",
2901 doi = "10.1103/PhysRev.136.B864",
2902 publisher = "American Physical Society",
2903 notes = "density functional theory, dft",
2907 title = "The calculation of atomic fields",
2908 author = "L. H. Thomas",
2909 journal = "Mathematical Proceedings of the Cambridge
2910 Philosophical Society",
2914 doi = "10.1017/S0305004100011683",
2919 author = "E. Fermi",
2920 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
2928 title = "The Wave Mechanics of an Atom with a Non-Coulomb
2929 Central Field. Part {I}. Theory and Methods",
2930 author = "D. R. Hartree",
2931 journal = "Mathematical Proceedings of the Cambridge
2932 Philosophical Society",
2936 doi = "10.1017/S0305004100011919",
2940 title = "The Theory of Complex Spectra",
2941 author = "J. C. Slater",
2942 journal = "Phys. Rev.",
2945 pages = "1293--1322",
2949 doi = "10.1103/PhysRev.34.1293",
2950 publisher = "American Physical Society",
2954 title = "Self-Consistent Equations Including Exchange and
2955 Correlation Effects",
2956 author = "W. Kohn and L. J. Sham",
2957 journal = "Phys. Rev.",
2960 pages = "A1133--A1138",
2964 doi = "10.1103/PhysRev.140.A1133",
2965 publisher = "American Physical Society",
2966 notes = "dft, exchange and correlation",
2970 title = "Density Functional and Density Matrix Method Scaling
2971 Linearly with the Number of Atoms",
2973 journal = "Phys. Rev. Lett.",
2976 pages = "3168--3171",
2980 doi = "10.1103/PhysRevLett.76.3168",
2981 publisher = "American Physical Society",
2985 title = "Edge Electron Gas",
2986 author = "Walter Kohn and Ann E. Mattsson",
2987 journal = "Phys. Rev. Lett.",
2990 pages = "3487--3490",
2994 doi = "10.1103/PhysRevLett.81.3487",
2995 publisher = "American Physical Society",
2999 title = "Nobel Lecture: Electronic structure of matter---wave
3000 functions and density functionals",
3002 journal = "Rev. Mod. Phys.",
3005 pages = "1253--1266",
3009 doi = "10.1103/RevModPhys.71.1253",
3010 publisher = "American Physical Society",
3014 title = "Electron densities in search of Hamiltonians",
3015 author = "Mel Levy",
3016 journal = "Phys. Rev. A",
3019 pages = "1200--1208",
3023 doi = "10.1103/PhysRevA.26.1200",
3024 publisher = "American Physical Society",
3028 title = "Strain-stabilized highly concentrated pseudomorphic
3029 $Si1-x$$Cx$ layers in Si",
3030 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3032 journal = "Phys. Rev. Lett.",
3035 pages = "3578--3581",
3039 doi = "10.1103/PhysRevLett.72.3578",
3040 publisher = "American Physical Society",
3041 notes = "high c concentration in si, heterostructure, strained
3046 title = "Phosphorous Doping of Strain-Induced
3047 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3048 by Low-Temperature Chemical Vapor Deposition",
3049 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3050 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3051 journal = "Japanese Journal of Applied Physics",
3053 number = "Part 1, No. 4B",
3054 pages = "2472--2475",
3057 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3058 doi = "10.1143/JJAP.41.2472",
3059 publisher = "The Japan Society of Applied Physics",
3060 notes = "experimental charge carrier mobility in strained si",
3064 title = "Electron Transport Model for Strained Silicon-Carbon
3066 author = "Shu-Tong Chang and Chung-Yi Lin",
3067 journal = "Japanese J. Appl. Phys.",
3070 pages = "2257--2262",
3073 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3074 doi = "10.1143/JJAP.44.2257",
3075 publisher = "The Japan Society of Applied Physics",
3076 notes = "enhance of electron mobility in strained si",
3079 @Article{kissinger94,
3080 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3083 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3084 y] layers on Si(001)",
3087 journal = "Applied Physics Letters",
3090 pages = "3356--3358",
3091 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3092 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3093 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3094 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3095 URL = "http://link.aip.org/link/?APL/65/3356/1",
3096 doi = "10.1063/1.112390",
3097 notes = "strained si influence on optical properties",
3101 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3104 title = "Substitutional versus interstitial carbon
3105 incorporation during pseudomorphic growth of Si[sub 1 -
3106 y]{C}[sub y] on Si(001)",
3109 journal = "Journal of Applied Physics",
3112 pages = "6711--6715",
3113 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3114 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3116 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3117 doi = "10.1063/1.363797",
3118 notes = "mbe substitutional vs interstitial c incorporation",
3122 author = "H. J. Osten and P. Gaworzewski",
3124 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3125 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3129 journal = "J. Appl. Phys.",
3132 pages = "4977--4981",
3133 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3134 semiconductors; semiconductor epitaxial layers; carrier
3135 density; Hall mobility; interstitials; defect states",
3136 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3137 doi = "10.1063/1.366364",
3138 notes = "charge transport in strained si",
3142 title = "Carbon-mediated aggregation of self-interstitials in
3143 silicon: {A} large-scale molecular dynamics study",
3144 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3145 journal = "Phys. Rev. B",
3152 doi = "10.1103/PhysRevB.69.155214",
3153 publisher = "American Physical Society",
3154 notes = "simulation using promising tersoff reparametrization",
3158 title = "Event-Based Relaxation of Continuous Disordered
3160 author = "G. T. Barkema and Normand Mousseau",
3161 journal = "Phys. Rev. Lett.",
3164 pages = "4358--4361",
3168 doi = "10.1103/PhysRevLett.77.4358",
3169 publisher = "American Physical Society",
3170 notes = "activation relaxation technique, art, speed up slow
3175 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3176 Minoukadeh and F. Willaime",
3178 title = "Some improvements of the activation-relaxation
3179 technique method for finding transition pathways on
3180 potential energy surfaces",
3183 journal = "J. Chem. Phys.",
3189 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3190 surfaces; vacancies (crystal)",
3191 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3192 doi = "10.1063/1.3088532",
3193 notes = "improvements to art, refs for methods to find
3194 transition pathways",
3197 @Article{parrinello81,
3198 author = "M. Parrinello and A. Rahman",
3200 title = "Polymorphic transitions in single crystals: {A} new
3201 molecular dynamics method",
3204 journal = "J. Appl. Phys.",
3207 pages = "7182--7190",
3208 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3209 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3210 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3211 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3212 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3214 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3215 doi = "10.1063/1.328693",
3218 @Article{stillinger85,
3219 title = "Computer simulation of local order in condensed phases
3221 author = "Frank H. Stillinger and Thomas A. Weber",
3222 journal = "Phys. Rev. B",
3225 pages = "5262--5271",
3229 doi = "10.1103/PhysRevB.31.5262",
3230 publisher = "American Physical Society",
3234 title = "Empirical potential for hydrocarbons for use in
3235 simulating the chemical vapor deposition of diamond
3237 author = "Donald W. Brenner",
3238 journal = "Phys. Rev. B",
3241 pages = "9458--9471",
3245 doi = "10.1103/PhysRevB.42.9458",
3246 publisher = "American Physical Society",
3247 notes = "brenner hydro carbons",
3251 title = "Modeling of Covalent Bonding in Solids by Inversion of
3252 Cohesive Energy Curves",
3253 author = "Martin Z. Bazant and Efthimios Kaxiras",
3254 journal = "Phys. Rev. Lett.",
3257 pages = "4370--4373",
3261 doi = "10.1103/PhysRevLett.77.4370",
3262 publisher = "American Physical Society",
3263 notes = "first si edip",
3267 title = "Environment-dependent interatomic potential for bulk
3269 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3271 journal = "Phys. Rev. B",
3274 pages = "8542--8552",
3278 doi = "10.1103/PhysRevB.56.8542",
3279 publisher = "American Physical Society",
3280 notes = "second si edip",
3284 title = "Interatomic potential for silicon defects and
3286 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3287 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3288 journal = "Phys. Rev. B",
3291 pages = "2539--2550",
3295 doi = "10.1103/PhysRevB.58.2539",
3296 publisher = "American Physical Society",
3297 notes = "latest si edip, good dislocation explanation",
3301 title = "{PARCAS} molecular dynamics code",
3302 author = "K. Nordlund",
3307 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3309 author = "Arthur F. Voter",
3310 journal = "Phys. Rev. Lett.",
3313 pages = "3908--3911",
3317 doi = "10.1103/PhysRevLett.78.3908",
3318 publisher = "American Physical Society",
3319 notes = "hyperdynamics, accelerated md",
3323 author = "Arthur F. Voter",
3325 title = "A method for accelerating the molecular dynamics
3326 simulation of infrequent events",
3329 journal = "J. Chem. Phys.",
3332 pages = "4665--4677",
3333 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3334 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3335 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3336 energy functions; surface diffusion; reaction kinetics
3337 theory; potential energy surfaces",
3338 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3339 doi = "10.1063/1.473503",
3340 notes = "improved hyperdynamics md",
3343 @Article{sorensen2000,
3344 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3346 title = "Temperature-accelerated dynamics for simulation of
3350 journal = "J. Chem. Phys.",
3353 pages = "9599--9606",
3354 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3355 MOLECULAR DYNAMICS METHOD; surface diffusion",
3356 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3357 doi = "10.1063/1.481576",
3358 notes = "temperature accelerated dynamics, tad",
3362 title = "Parallel replica method for dynamics of infrequent
3364 author = "Arthur F. Voter",
3365 journal = "Phys. Rev. B",
3368 pages = "R13985--R13988",
3372 doi = "10.1103/PhysRevB.57.R13985",
3373 publisher = "American Physical Society",
3374 notes = "parallel replica method, accelerated md",
3378 author = "Xiongwu Wu and Shaomeng Wang",
3380 title = "Enhancing systematic motion in molecular dynamics
3384 journal = "J. Chem. Phys.",
3387 pages = "9401--9410",
3388 keywords = "molecular dynamics method; argon; Lennard-Jones
3389 potential; crystallisation; liquid theory",
3390 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3391 doi = "10.1063/1.478948",
3392 notes = "self guided md, sgmd, accelerated md, enhancing
3396 @Article{choudhary05,
3397 author = "Devashish Choudhary and Paulette Clancy",
3399 title = "Application of accelerated molecular dynamics schemes
3400 to the production of amorphous silicon",
3403 journal = "J. Chem. Phys.",
3409 keywords = "molecular dynamics method; silicon; glass structure;
3410 amorphous semiconductors",
3411 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3412 doi = "10.1063/1.1878733",
3413 notes = "explanation of sgmd and hyper md, applied to amorphous
3418 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3420 title = "Carbon precipitation in silicon: Why is it so
3424 journal = "Appl. Phys. Lett.",
3427 pages = "3336--3338",
3428 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3429 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3431 URL = "http://link.aip.org/link/?APL/62/3336/1",
3432 doi = "10.1063/1.109063",
3433 notes = "interfacial energy of cubic sic and si, si self
3434 interstitials necessary for precipitation, volume
3435 decrease, high interface energy",
3438 @Article{chaussende08,
3439 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3440 journal = "J. Cryst. Growth",
3445 note = "Proceedings of the E-MRS Conference, Symposium G -
3446 Substrates of Wide Bandgap Materials",
3448 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3449 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3450 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3451 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3452 and A. Andreadou and E. K. Polychroniadis and C.
3453 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3454 notes = "3c-sic crystal growth, sic fabrication + links,
3458 @Article{chaussende07,
3459 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3460 title = "Status of Si{C} bulk growth processes",
3461 journal = "Journal of Physics D: Applied Physics",
3465 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3467 notes = "review of sic single crystal growth methods, process
3472 title = "Forces in Molecules",
3473 author = "R. P. Feynman",
3474 journal = "Phys. Rev.",
3481 doi = "10.1103/PhysRev.56.340",
3482 publisher = "American Physical Society",
3483 notes = "hellmann feynman forces",
3487 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3488 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3489 their Contrasting Properties",
3490 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3492 journal = "Phys. Rev. Lett.",
3499 doi = "10.1103/PhysRevLett.84.943",
3500 publisher = "American Physical Society",
3501 notes = "si sio2 and sic sio2 interface",
3504 @Article{djurabekova08,
3505 title = "Atomistic simulation of the interface structure of Si
3506 nanocrystals embedded in amorphous silica",
3507 author = "Flyura Djurabekova and Kai Nordlund",
3508 journal = "Phys. Rev. B",
3515 doi = "10.1103/PhysRevB.77.115325",
3516 publisher = "American Physical Society",
3517 notes = "nc-si in sio2, interface energy, nc construction,
3518 angular distribution, coordination",
3522 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3523 W. Liang and J. Zou",
3525 title = "Nature of interfacial defects and their roles in
3526 strain relaxation at highly lattice mismatched
3527 3{C}-Si{C}/Si (001) interface",
3530 journal = "J. Appl. Phys.",
3536 keywords = "anelastic relaxation; crystal structure; dislocations;
3537 elemental semiconductors; semiconductor growth;
3538 semiconductor thin films; silicon; silicon compounds;
3539 stacking faults; wide band gap semiconductors",
3540 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3541 doi = "10.1063/1.3234380",
3542 notes = "sic/si interface, follow refs, tem image
3543 deconvolution, dislocation defects",
3546 @Article{kitabatake93,
3547 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3550 title = "Simulations and experiments of Si{C} heteroepitaxial
3551 growth on Si(001) surface",
3554 journal = "J. Appl. Phys.",
3557 pages = "4438--4445",
3558 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3559 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3560 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3561 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3562 doi = "10.1063/1.354385",
3563 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3567 @Article{kitabatake97,
3568 author = "Makoto Kitabatake",
3569 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3570 Heteroepitaxial Growth",
3571 publisher = "WILEY-VCH Verlag",
3573 journal = "physica status solidi (b)",
3576 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3577 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3578 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3582 title = "Strain relaxation and thermal stability of the
3583 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3585 journal = "Thin Solid Films",
3592 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3593 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3594 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3595 keywords = "Strain relaxation",
3596 keywords = "Interfaces",
3597 keywords = "Thermal stability",
3598 keywords = "Molecular dynamics",
3599 notes = "tersoff sic/si interface study",
3603 title = "Ab initio Study of Misfit Dislocations at the
3604 $Si{C}/Si(001)$ Interface",
3605 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3607 journal = "Phys. Rev. Lett.",
3614 doi = "10.1103/PhysRevLett.89.156101",
3615 publisher = "American Physical Society",
3616 notes = "sic/si interface study",
3619 @Article{pizzagalli03,
3620 title = "Theoretical investigations of a highly mismatched
3621 interface: Si{C}/Si(001)",
3622 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3624 journal = "Phys. Rev. B",
3631 doi = "10.1103/PhysRevB.68.195302",
3632 publisher = "American Physical Society",
3633 notes = "tersoff md and ab initio sic/si interface study",
3637 title = "Atomic configurations of dislocation core and twin
3638 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3639 electron microscopy",
3640 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3641 H. Zheng and J. W. Liang",
3642 journal = "Phys. Rev. B",
3649 doi = "10.1103/PhysRevB.75.184103",
3650 publisher = "American Physical Society",
3651 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3655 @Article{hornstra58,
3656 title = "Dislocations in the diamond lattice",
3657 journal = "Journal of Physics and Chemistry of Solids",
3664 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3665 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3666 author = "J. Hornstra",
3667 notes = "dislocations in diamond lattice",
3671 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3672 Ion `Hot' Implantation",
3673 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3674 Hirao and Naoki Arai and Tomio Izumi",
3675 journal = "Japanese J. Appl. Phys.",
3677 number = "Part 1, No. 2A",
3681 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3682 doi = "10.1143/JJAP.31.343",
3683 publisher = "The Japan Society of Applied Physics",
3684 notes = "c-c bonds in c implanted si, hot implantation
3685 efficiency, c-c hard to break by thermal annealing",
3688 @Article{eichhorn99,
3689 author = "F. Eichhorn and N. Schell and W. Matz and R.
3692 title = "Strain and Si{C} particle formation in silicon
3693 implanted with carbon ions of medium fluence studied by
3694 synchrotron x-ray diffraction",
3697 journal = "J. Appl. Phys.",
3700 pages = "4184--4187",
3701 keywords = "silicon; carbon; elemental semiconductors; chemical
3702 interdiffusion; ion implantation; X-ray diffraction;
3703 precipitation; semiconductor doping",
3704 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3705 doi = "10.1063/1.371344",
3706 notes = "sic conversion by ibs, detected substitutional carbon,
3707 expansion of si lattice",
3710 @Article{eichhorn02,
3711 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3712 Metzger and W. Matz and R. K{\"{o}}gler",
3714 title = "Structural relation between Si and Si{C} formed by
3715 carbon ion implantation",
3718 journal = "J. Appl. Phys.",
3721 pages = "1287--1292",
3722 keywords = "silicon compounds; wide band gap semiconductors; ion
3723 implantation; annealing; X-ray scattering; transmission
3724 electron microscopy",
3725 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3726 doi = "10.1063/1.1428105",
3727 notes = "3c-sic alignement to si host in ibs depending on
3728 temperature, might explain c into c sub trafo",
3732 author = "G Lucas and M Bertolus and L Pizzagalli",
3733 title = "An environment-dependent interatomic potential for
3734 silicon carbide: calculation of bulk properties,
3735 high-pressure phases, point and extended defects, and
3736 amorphous structures",
3737 journal = "J. Phys.: Condens. Matter",
3741 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3747 author = "J Godet and L Pizzagalli and S Brochard and P
3749 title = "Comparison between classical potentials and ab initio
3750 methods for silicon under large shear",
3751 journal = "J. Phys.: Condens. Matter",
3755 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3757 notes = "comparison of empirical potentials, stillinger weber,
3758 edip, tersoff, ab initio",
3761 @Article{moriguchi98,
3762 title = "Verification of Tersoff's Potential for Static
3763 Structural Analysis of Solids of Group-{IV} Elements",
3764 author = "Koji Moriguchi and Akira Shintani",
3765 journal = "Japanese J. Appl. Phys.",
3767 number = "Part 1, No. 2",
3771 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3772 doi = "10.1143/JJAP.37.414",
3773 publisher = "The Japan Society of Applied Physics",
3774 notes = "tersoff stringent test",
3777 @Article{mazzarolo01,
3778 title = "Low-energy recoils in crystalline silicon: Quantum
3780 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3781 Lulli and Eros Albertazzi",
3782 journal = "Phys. Rev. B",
3789 doi = "10.1103/PhysRevB.63.195207",
3790 publisher = "American Physical Society",
3793 @Article{holmstroem08,
3794 title = "Threshold defect production in silicon determined by
3795 density functional theory molecular dynamics
3797 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3798 journal = "Phys. Rev. B",
3805 doi = "10.1103/PhysRevB.78.045202",
3806 publisher = "American Physical Society",
3807 notes = "threshold displacement comparison empirical and ab
3811 @Article{nordlund97,
3812 title = "Repulsive interatomic potentials calculated using
3813 Hartree-Fock and density-functional theory methods",
3814 journal = "Nucl. Instrum. Methods Phys. Res. B",
3821 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3822 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3823 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3824 notes = "repulsive ab initio potential",
3828 title = "Efficiency of ab-initio total energy calculations for
3829 metals and semiconductors using a plane-wave basis
3831 journal = "Comput. Mater. Sci.",
3838 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3839 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3840 author = "G. Kresse and J. Furthm{\"{u}}ller",
3845 title = "Projector augmented-wave method",
3846 author = "P. E. Bl{\"o}chl",
3847 journal = "Phys. Rev. B",
3850 pages = "17953--17979",
3854 doi = "10.1103/PhysRevB.50.17953",
3855 publisher = "American Physical Society",
3856 notes = "paw method",
3860 title = "Norm-Conserving Pseudopotentials",
3861 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3862 journal = "Phys. Rev. Lett.",
3865 pages = "1494--1497",
3869 doi = "10.1103/PhysRevLett.43.1494",
3870 publisher = "American Physical Society",
3871 notes = "norm-conserving pseudopotentials",
3874 @Article{vanderbilt90,
3875 title = "Soft self-consistent pseudopotentials in a generalized
3876 eigenvalue formalism",
3877 author = "David Vanderbilt",
3878 journal = "Phys. Rev. B",
3881 pages = "7892--7895",
3885 doi = "10.1103/PhysRevB.41.7892",
3886 publisher = "American Physical Society",
3887 notes = "vasp pseudopotentials",
3890 @Article{ceperley80,
3891 title = "Ground State of the Electron Gas by a Stochastic
3893 author = "D. M. Ceperley and B. J. Alder",
3894 journal = "Phys. Rev. Lett.",
3901 doi = "10.1103/PhysRevLett.45.566",
3902 publisher = "American Physical Society",
3906 title = "Self-interaction correction to density-functional
3907 approximations for many-electron systems",
3908 author = "J. P. Perdew and Alex Zunger",
3909 journal = "Phys. Rev. B",
3912 pages = "5048--5079",
3916 doi = "10.1103/PhysRevB.23.5048",
3917 publisher = "American Physical Society",
3921 title = "Accurate and simple density functional for the
3922 electronic exchange energy: Generalized gradient
3924 author = "John P. Perdew and Yue Wang",
3925 journal = "Phys. Rev. B",
3928 pages = "8800--8802",
3932 doi = "10.1103/PhysRevB.33.8800",
3933 publisher = "American Physical Society",
3934 notes = "rapid communication gga",
3938 title = "Generalized gradient approximations for exchange and
3939 correlation: {A} look backward and forward",
3940 journal = "Physica B: Condensed Matter",
3947 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3948 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3949 author = "John P. Perdew",
3950 notes = "gga overview",
3954 title = "Atoms, molecules, solids, and surfaces: Applications
3955 of the generalized gradient approximation for exchange
3957 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3958 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3959 and Carlos Fiolhais",
3960 journal = "Phys. Rev. B",
3963 pages = "6671--6687",
3967 doi = "10.1103/PhysRevB.46.6671",
3968 publisher = "American Physical Society",
3969 notes = "gga pw91 (as in vasp)",
3972 @Article{baldereschi73,
3973 title = "Mean-Value Point in the Brillouin Zone",
3974 author = "A. Baldereschi",
3975 journal = "Phys. Rev. B",
3978 pages = "5212--5215",
3982 doi = "10.1103/PhysRevB.7.5212",
3983 publisher = "American Physical Society",
3984 notes = "mean value k point",
3988 title = "Ab initio pseudopotential calculations of dopant
3990 journal = "Comput. Mater. Sci.",
3997 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3998 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3999 author = "Jing Zhu",
4000 keywords = "TED (transient enhanced diffusion)",
4001 keywords = "Boron dopant",
4002 keywords = "Carbon dopant",
4003 keywords = "Defect",
4004 keywords = "ab initio pseudopotential method",
4005 keywords = "Impurity cluster",
4006 notes = "binding of c to si interstitial, c in si defects",
4010 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4012 title = "Si{C} buried layer formation by ion beam synthesis at
4016 journal = "Appl. Phys. Lett.",
4019 pages = "2646--2648",
4020 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4021 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4022 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4023 ELECTRON MICROSCOPY",
4024 URL = "http://link.aip.org/link/?APL/66/2646/1",
4025 doi = "10.1063/1.113112",
4026 notes = "precipitation mechanism by substitutional carbon, si
4027 self interstitials react with further implanted c",
4031 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4032 Kolodzey and A. Hairie",
4034 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4038 journal = "J. Appl. Phys.",
4041 pages = "4631--4633",
4042 keywords = "silicon compounds; precipitation; localised modes;
4043 semiconductor epitaxial layers; infrared spectra;
4044 Fourier transform spectra; thermal stability;
4046 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4047 doi = "10.1063/1.368703",
4048 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4052 author = "R Jones and B J Coomer and P R Briddon",
4053 title = "Quantum mechanical modelling of defects in
4055 journal = "J. Phys.: Condens. Matter",
4059 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4061 notes = "ab inito dft intro, vibrational modes, c defect in
4066 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4067 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4068 J. E. Greene and S. G. Bishop",
4070 title = "Carbon incorporation pathways and lattice sites in
4071 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4072 molecular-beam epitaxy",
4075 journal = "J. Appl. Phys.",
4078 pages = "5716--5727",
4079 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4080 doi = "10.1063/1.1465122",
4081 notes = "c substitutional incorporation pathway, dft and expt",
4085 title = "Dynamic properties of interstitial carbon and
4086 carbon-carbon pair defects in silicon",
4087 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4089 journal = "Phys. Rev. B",
4092 pages = "2188--2194",
4096 doi = "10.1103/PhysRevB.55.2188",
4097 publisher = "American Physical Society",
4098 notes = "ab initio c in si and di-carbon defect, no formation
4099 energies, different migration barriers and paths",
4103 title = "Interstitial carbon and the carbon-carbon pair in
4104 silicon: Semiempirical electronic-structure
4106 author = "Matthew J. Burnard and Gary G. DeLeo",
4107 journal = "Phys. Rev. B",
4110 pages = "10217--10225",
4114 doi = "10.1103/PhysRevB.47.10217",
4115 publisher = "American Physical Society",
4116 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4117 carbon defect, formation energies",
4121 title = "Electronic structure of interstitial carbon in
4123 author = "Morgan Besson and Gary G. DeLeo",
4124 journal = "Phys. Rev. B",
4127 pages = "4028--4033",
4131 doi = "10.1103/PhysRevB.43.4028",
4132 publisher = "American Physical Society",
4136 title = "Review of atomistic simulations of surface diffusion
4137 and growth on semiconductors",
4138 journal = "Comput. Mater. Sci.",
4143 note = "Proceedings of the Workshop on Virtual Molecular Beam
4146 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4147 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4148 author = "Efthimios Kaxiras",
4149 notes = "might contain c 100 db formation energy, overview md,
4150 tight binding, first principles",
4153 @Article{kaukonen98,
4154 title = "Effect of {N} and {B} doping on the growth of {CVD}
4156 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4158 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4159 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4161 journal = "Phys. Rev. B",
4164 pages = "9965--9970",
4168 doi = "10.1103/PhysRevB.57.9965",
4169 publisher = "American Physical Society",
4170 notes = "constrained conjugate gradient relaxation technique
4175 title = "Correlation between the antisite pair and the ${DI}$
4177 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4178 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4180 journal = "Phys. Rev. B",
4187 doi = "10.1103/PhysRevB.67.155203",
4188 publisher = "American Physical Society",
4192 title = "Production and recovery of defects in Si{C} after
4193 irradiation and deformation",
4194 journal = "J. Nucl. Mater.",
4197 pages = "1803--1808",
4201 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4202 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4203 author = "J. Chen and P. Jung and H. Klein",
4207 title = "Accumulation, dynamic annealing and thermal recovery
4208 of ion-beam-induced disorder in silicon carbide",
4209 journal = "Nucl. Instrum. Methods Phys. Res. B",
4216 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4217 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4218 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4221 @Article{bockstedte03,
4222 title = "Ab initio study of the migration of intrinsic defects
4224 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4226 journal = "Phys. Rev. B",
4233 doi = "10.1103/PhysRevB.68.205201",
4234 publisher = "American Physical Society",
4235 notes = "defect migration in sic",
4239 title = "Theoretical study of vacancy diffusion and
4240 vacancy-assisted clustering of antisites in Si{C}",
4241 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4243 journal = "Phys. Rev. B",
4250 doi = "10.1103/PhysRevB.68.155208",
4251 publisher = "American Physical Society",
4255 journal = "Telegrafiya i Telefoniya bez Provodov",
4259 author = "O. V. Lossev",
4263 title = "Luminous carborundum detector and detection effect and
4264 oscillations with crystals",
4265 journal = "Philosophical Magazine Series 7",
4268 pages = "1024--1044",
4270 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4271 author = "O. V. Lossev",
4275 journal = "Physik. Zeitschr.",
4279 author = "O. V. Lossev",
4283 journal = "Physik. Zeitschr.",
4287 author = "O. V. Lossev",
4291 journal = "Physik. Zeitschr.",
4295 author = "O. V. Lossev",
4299 title = "A note on carborundum",
4300 journal = "Electrical World",
4304 author = "H. J. Round",
4307 @Article{vashishath08,
4308 title = "Recent trends in silicon carbide device research",
4309 journal = "Mj. Int. J. Sci. Tech.",
4314 author = "Munish Vashishath and Ashoke K. Chatterjee",
4315 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4316 notes = "sic polytype electronic properties",
4320 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4322 title = "Growth and Properties of beta-Si{C} Single Crystals",
4325 journal = "Journal of Applied Physics",
4329 URL = "http://link.aip.org/link/?JAP/37/333/1",
4330 doi = "10.1063/1.1707837",
4331 notes = "sic melt growth",
4335 author = "A. E. van Arkel and J. H. de Boer",
4336 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4338 publisher = "WILEY-VCH Verlag GmbH",
4340 journal = "Z. Anorg. Chem.",
4343 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4344 doi = "10.1002/zaac.19251480133",
4345 notes = "van arkel apparatus",
4349 author = "K. Moers",
4351 journal = "Z. Anorg. Chem.",
4354 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4359 author = "J. T. Kendall",
4360 title = "Electronic Conduction in Silicon Carbide",
4363 journal = "The Journal of Chemical Physics",
4367 URL = "http://link.aip.org/link/?JCP/21/821/1",
4368 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4373 author = "J. A. Lely",
4375 journal = "Ber. Deut. Keram. Ges.",
4378 notes = "lely sublimation growth process",
4381 @Article{knippenberg63,
4382 author = "W. F. Knippenberg",
4384 journal = "Philips Res. Repts.",
4387 notes = "acheson process",
4390 @Article{hoffmann82,
4391 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4394 title = "Silicon carbide blue light emitting diodes with
4395 improved external quantum efficiency",
4398 journal = "Journal of Applied Physics",
4401 pages = "6962--6967",
4402 keywords = "light emitting diodes; silicon carbides; quantum
4403 efficiency; visible radiation; experimental data;
4404 epitaxy; fabrication; medium temperature; layers;
4405 aluminium; nitrogen; substrates; pn junctions;
4406 electroluminescence; spectra; current density;
4408 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4409 doi = "10.1063/1.330041",
4410 notes = "blue led, sublimation process",
4414 author = "Philip Neudeck",
4415 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4416 Road 44135 Cleveland OH",
4417 title = "Progress in silicon carbide semiconductor electronics
4419 journal = "Journal of Electronic Materials",
4420 publisher = "Springer Boston",
4422 keyword = "Chemistry and Materials Science",
4426 URL = "http://dx.doi.org/10.1007/BF02659688",
4427 note = "10.1007/BF02659688",
4429 notes = "sic data, advantages of 3c sic",
4432 @Article{bhatnagar93,
4433 author = "M. Bhatnagar and B. J. Baliga",
4434 journal = "Electron Devices, IEEE Transactions on",
4435 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4442 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4443 rectifiers;Si;SiC;breakdown voltages;drift region
4444 properties;output characteristics;power MOSFETs;power
4445 semiconductor devices;switching characteristics;thermal
4446 analysis;Schottky-barrier diodes;electric breakdown of
4447 solids;insulated gate field effect transistors;power
4448 transistors;semiconductor materials;silicon;silicon
4449 compounds;solid-state rectifiers;thermal analysis;",
4450 doi = "10.1109/16.199372",
4452 notes = "comparison 3c 6h sic and si devices",
4456 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4457 A. Powell and C. S. Salupo and L. G. Matus",
4458 journal = "Electron Devices, IEEE Transactions on",
4459 title = "Electrical properties of epitaxial 3{C}- and
4460 6{H}-Si{C} p-n junction diodes produced side-by-side on
4461 6{H}-Si{C} substrates",
4467 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4468 C;6H-SiC layers;6H-SiC substrates;CVD
4469 process;SiC;chemical vapor deposition;doping;electrical
4470 properties;epitaxial layers;light
4471 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4472 diodes;polytype;rectification characteristics;reverse
4473 leakage current;reverse voltages;temperature;leakage
4474 currents;power electronics;semiconductor
4475 diodes;semiconductor epitaxial layers;semiconductor
4476 growth;semiconductor materials;silicon
4477 compounds;solid-state rectifiers;substrates;vapour
4478 phase epitaxial growth;",
4479 doi = "10.1109/16.285038",
4481 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4486 author = "N. Schulze and D. L. Barrett and G. Pensl",
4488 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4489 single crystals by physical vapor transport",
4492 journal = "Applied Physics Letters",
4495 pages = "1632--1634",
4496 keywords = "silicon compounds; semiconductor materials;
4497 semiconductor growth; crystal growth from vapour;
4498 photoluminescence; Hall mobility",
4499 URL = "http://link.aip.org/link/?APL/72/1632/1",
4500 doi = "10.1063/1.121136",
4501 notes = "micropipe free 6h-sic pvt growth",
4505 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4507 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4510 journal = "Applied Physics Letters",
4514 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4515 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4516 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4517 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4519 URL = "http://link.aip.org/link/?APL/50/221/1",
4520 doi = "10.1063/1.97667",
4521 notes = "apb 3c-sic heteroepitaxy on si",
4524 @Article{shibahara86,
4525 title = "Surface morphology of cubic Si{C}(100) grown on
4526 Si(100) by chemical vapor deposition",
4527 journal = "Journal of Crystal Growth",
4534 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4535 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4536 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4538 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4541 @Article{desjardins96,
4542 author = "P. Desjardins and J. E. Greene",
4544 title = "Step-flow epitaxial growth on two-domain surfaces",
4547 journal = "Journal of Applied Physics",
4550 pages = "1423--1434",
4551 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4552 FILM GROWTH; SURFACE STRUCTURE",
4553 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4554 doi = "10.1063/1.360980",
4555 notes = "apb model",
4559 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4561 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4562 carbonization of silicon",
4565 journal = "Journal of Applied Physics",
4568 pages = "2070--2073",
4569 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4570 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4572 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4573 doi = "10.1063/1.360184",
4574 notes = "ssmbe of sic on si, lower temperatures",
4578 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4579 {MBE} using surface superstructure",
4580 journal = "Journal of Crystal Growth",
4587 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4588 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4589 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4590 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4591 notes = "gas source mbe of 3c-sic on 6h-sic",
4594 @Article{yoshinobu92,
4595 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4596 and Takashi Fuyuki and Hiroyuki Matsunami",
4598 title = "Lattice-matched epitaxial growth of single crystalline
4599 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4600 molecular beam epitaxy",
4603 journal = "Applied Physics Letters",
4607 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4608 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4609 INTERFACE STRUCTURE",
4610 URL = "http://link.aip.org/link/?APL/60/824/1",
4611 doi = "10.1063/1.107430",
4612 notes = "gas source mbe of 3c-sic on 6h-sic",
4615 @Article{yoshinobu90,
4616 title = "Atomic level control in gas source {MBE} growth of
4618 journal = "Journal of Crystal Growth",
4625 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4626 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4627 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4628 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4629 notes = "gas source mbe of 3c-sic on 3c-sic",
4633 title = "Atomic layer epitaxy controlled by surface
4634 superstructures in Si{C}",
4635 journal = "Thin Solid Films",
4642 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4643 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4644 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4646 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4651 title = "Microscopic mechanisms of accurate layer-by-layer
4652 growth of [beta]-Si{C}",
4653 journal = "Thin Solid Films",
4660 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4661 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4662 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4663 and S. Misawa and E. Sakuma and S. Yoshida",
4664 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4669 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4671 title = "Effects of gas flow ratio on silicon carbide thin film
4672 growth mode and polytype formation during gas-source
4673 molecular beam epitaxy",
4676 journal = "Applied Physics Letters",
4679 pages = "2851--2853",
4680 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4681 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4682 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4684 URL = "http://link.aip.org/link/?APL/65/2851/1",
4685 doi = "10.1063/1.112513",
4686 notes = "gas source mbe of 6h-sic on 6h-sic",
4690 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4691 title = "Heterointerface Control and Epitaxial Growth of
4692 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4693 publisher = "WILEY-VCH Verlag",
4695 journal = "physica status solidi (b)",
4698 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4703 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4704 journal = "Journal of Crystal Growth",
4711 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4712 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4713 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4714 keywords = "Reflection high-energy electron diffraction (RHEED)",
4715 keywords = "Scanning electron microscopy (SEM)",
4716 keywords = "Silicon carbide",
4717 keywords = "Silicon",
4718 keywords = "Island growth",
4719 notes = "lower temperature, 550-700",
4722 @Article{hatayama95,
4723 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4724 on Si using hydrocarbon radicals by gas source
4725 molecular beam epitaxy",
4726 journal = "Journal of Crystal Growth",
4733 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4734 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4735 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4736 and Hiroyuki Matsunami",
4740 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4741 title = "The Preference of Silicon Carbide for Growth in the
4742 Metastable Cubic Form",
4743 journal = "Journal of the American Ceramic Society",
4746 publisher = "Blackwell Publishing Ltd",
4748 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4749 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4750 pages = "2630--2633",
4751 keywords = "silicon carbide, crystal growth, crystal structure,
4752 calculations, stability",
4754 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4755 polytype dft calculation refs",
4758 @Article{allendorf91,
4759 title = "The adsorption of {H}-atoms on polycrystalline
4760 [beta]-silicon carbide",
4761 journal = "Surface Science",
4768 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4769 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4770 author = "Mark D. Allendorf and Duane A. Outka",
4771 notes = "h adsorption on 3c-sic",
4774 @Article{eaglesham93,
4775 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4776 D. P. Adams and S. M. Yalisove",
4778 title = "Effect of {H} on Si molecular-beam epitaxy",
4781 journal = "Journal of Applied Physics",
4784 pages = "6615--6618",
4785 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4786 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4787 DIFFUSION; ADSORPTION",
4788 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4789 doi = "10.1063/1.355101",
4790 notes = "h incorporation on si surface, lower surface
4795 author = "Ronald C. Newman",
4796 title = "Carbon in Crystalline Silicon",
4797 journal = "MRS Online Proceedings Library",
4802 doi = "10.1557/PROC-59-403",
4803 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4804 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4808 title = "The diffusivity of carbon in silicon",
4809 journal = "Journal of Physics and Chemistry of Solids",
4816 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4817 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4818 author = "R. C. Newman and J. Wakefield",
4819 notes = "diffusivity of substitutional c in si",
4823 author = "U. Gösele",
4824 title = "The Role of Carbon and Point Defects in Silicon",
4825 journal = "MRS Online Proceedings Library",
4830 doi = "10.1557/PROC-59-419",
4831 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4832 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4835 @Article{mukashev82,
4836 title = "Defects in Carbon-Implanted Silicon",
4837 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4838 Fukuoka and Haruo Saito",
4839 journal = "Japanese Journal of Applied Physics",
4841 number = "Part 1, No. 2",
4845 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4846 doi = "10.1143/JJAP.21.399",
4847 publisher = "The Japan Society of Applied Physics",
4851 title = "Convergence of supercell calculations for point
4852 defects in semiconductors: Vacancy in silicon",
4853 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4855 journal = "Phys. Rev. B",
4858 pages = "1318--1325",
4862 doi = "10.1103/PhysRevB.58.1318",
4863 publisher = "American Physical Society",
4864 notes = "convergence k point supercell size, vacancy in
4869 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4870 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4871 K{\"{o}}gler and W. Skorupa",
4873 title = "Spectroscopic characterization of phases formed by
4874 high-dose carbon ion implantation in silicon",
4877 journal = "Journal of Applied Physics",
4880 pages = "2978--2984",
4881 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4882 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4883 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4884 DEPENDENCE; PRECIPITATES; ANNEALING",
4885 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4886 doi = "10.1063/1.358714",
4889 @Article{romano-rodriguez96,
4890 title = "Detailed analysis of [beta]-Si{C} formation by high
4891 dose carbon ion implantation in silicon",
4892 journal = "Materials Science and Engineering B",
4897 note = "European Materials Research Society 1995 Spring
4898 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4899 Oxygen in Silicon and in Other Elemental
4902 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4903 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4904 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4905 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4907 keywords = "Silicon",
4908 keywords = "Ion implantation",
4909 notes = "incoherent 3c-sic precipitate",