2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "P. S. de Laplace",
45 title = "Th\'eorie analytique des probabilit\'es",
46 series = "Oeuvres Compl\`etes de Laplace",
48 publisher = "Gauthier-Villars",
53 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
54 title = "{Atomistic modeling of brittleness in covalent
56 journal = "Phys. Rev. B",
62 doi = "10.1103/PhysRevB.76.224103",
63 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
64 longe(r)-range-interactions, brittle propagation of
65 fracture, more available potentials, universal energy
66 relation (uer), minimum range model (mrm)",
70 title = "Stress relaxation in $a-Si$ induced by ion
72 author = "H. M. Urbassek M. Koster",
73 journal = "Phys. Rev. B",
76 pages = "11219--11224",
80 doi = "10.1103/PhysRevB.62.11219",
81 publisher = "American Physical Society",
82 notes = "virial derivation for 3-body tersoff potential",
86 title = "Direct simulation of ion-beam-induced stressing and
87 amorphization of silicon",
88 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
89 journal = "Phys. Rev. B",
92 pages = "12610--12616",
96 doi = "10.1103/PhysRevB.60.12610",
97 publisher = "American Physical Society",
98 notes = "virial derivation for 3-body tersoff potential",
102 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
103 Thermodynamical Properties of Lennard-Jones Molecules",
104 author = "Loup Verlet",
105 journal = "Phys. Rev.",
111 doi = "10.1103/PhysRev.159.98",
112 publisher = "American Physical Society",
113 notes = "velocity verlet integration algorithm equation of
117 @Article{berendsen84,
118 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
119 Gunsteren and A. DiNola and J. R. Haak",
121 title = "Molecular dynamics with coupling to an external bath",
124 journal = "The Journal of Chemical Physics",
127 pages = "3684--3690",
128 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
129 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
130 URL = "http://link.aip.org/link/?JCP/81/3684/1",
131 doi = "10.1063/1.448118",
132 notes = "berendsen thermostat barostat",
136 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
138 title = "Molecular dynamics determination of defect energetics
139 in beta -Si{C} using three representative empirical
141 journal = "Modelling and Simulation in Materials Science and
146 URL = "http://stacks.iop.org/0965-0393/3/615",
147 notes = "comparison of tersoff, pearson and eam for defect
148 energetics in sic; (m)eam parameters for sic",
153 title = "Relationship between the embedded-atom method and
155 author = "Donald W. Brenner",
156 journal = "Phys. Rev. Lett.",
163 doi = "10.1103/PhysRevLett.63.1022",
164 publisher = "American Physical Society",
165 notes = "relation of tersoff and eam potential",
169 title = "Molecular-dynamics study of self-interstitials in
171 author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
172 journal = "Phys. Rev. B",
175 pages = "9552--9558",
179 doi = "10.1103/PhysRevB.35.9552",
180 publisher = "American Physical Society",
181 notes = "selft-interstitials in silicon, stillinger-weber,
182 calculation of defect formation energy, defect
187 title = "Extended interstitials in silicon and germanium",
188 author = "H. R. Schober",
189 journal = "Phys. Rev. B",
192 pages = "13013--13015",
196 doi = "10.1103/PhysRevB.39.13013",
197 publisher = "American Physical Society",
198 notes = "stillinger-weber silicon 110 stable and metastable
199 dumbbell configuration",
203 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
204 Defect accumulation, topological features, and
206 author = "F. Gao and W. J. Weber",
207 journal = "Phys. Rev. B",
214 doi = "10.1103/PhysRevB.66.024106",
215 publisher = "American Physical Society",
216 note = "sic intro, si cascade in 3c-sic, amorphization,
217 tersoff modified, pair correlation of amorphous sic, md
221 @Article{devanathan98,
222 title = "Computer simulation of a 10 ke{V} Si displacement
224 journal = "Nuclear Instruments and Methods in Physics Research
225 Section B: Beam Interactions with Materials and Atoms",
232 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
233 author = "R. Devanathan and W. J. Weber and T. Diaz de la
235 notes = "modified tersoff short range potential, ab initio
239 @Article{devanathan98_2,
240 title = "Displacement threshold energies in [beta]-Si{C}",
241 journal = "Journal of Nuclear Materials",
247 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
248 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
250 notes = "modified tersoff, ab initio, combined ab initio
255 title = "Si{C}/Si heteroepitaxial growth",
256 author = "M. Kitabatake",
257 journal = "Thin Solid Films",
262 notes = "md simulation, sic si heteroepitaxy, mbe",
266 title = "Intrinsic point defects in crystalline silicon:
267 Tight-binding molecular dynamics studies of
268 self-diffusion, interstitial-vacancy recombination, and
270 author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
271 journal = "Phys. Rev. B",
274 pages = "14279--14289",
278 doi = "10.1103/PhysRevB.55.14279",
279 publisher = "American Physical Society",
280 notes = "si self interstitial, diffusion, tbmd",
284 title = "Tight-binding theory of native point defects in
286 author = "L. Colombo",
287 journal = "Annu. Rev. Mater. Res.",
292 doi = "10.1146/annurev.matsci.32.111601.103036",
293 publisher = "Annual Reviews",
294 notes = "si self interstitial, tbmd, virial stress",
298 title = "Ab initio and empirical-potential studies of defect
299 properties in $3{C}-Si{C}$",
300 author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
301 journal = "Phys. Rev. B",
308 doi = "10.1103/PhysRevB.64.245208",
309 publisher = "American Physical Society",
310 notes = "defects in 3c-sic",
313 @Article{mattoni2002,
314 title = "Self-interstitial trapping by carbon complexes in
315 crystalline silicon",
316 author = "A. Mattoni and F. Bernardini and L. Colombo",
317 journal = "Phys. Rev. B",
324 doi = "10.1103/PhysRevB.66.195214",
325 publisher = "American Physical Society",
326 notes = "c in c-si, diffusion, interstitial configuration +
331 title = "Calculations of Silicon Self-Interstitial Defects",
332 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
334 journal = "Phys. Rev. Lett.",
337 pages = "2351--2354",
341 doi = "10.1103/PhysRevLett.83.2351",
342 publisher = "American Physical Society",
343 notes = "nice images of the defects",
347 title = "Identification of the migration path of interstitial
349 author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
350 journal = "Phys. Rev. B",
353 pages = "7439--7442",
357 doi = "10.1103/PhysRevB.50.7439",
358 publisher = "American Physical Society",
359 notes = "carbon interstitial migration path shown, 001 c-si
364 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
366 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
367 Sokrates T. Pantelides",
368 journal = "Phys. Rev. Lett.",
371 pages = "1814--1817",
375 doi = "10.1103/PhysRevLett.52.1814",
376 publisher = "American Physical Society",
377 notes = "microscopic theory diffusion silicon dft migration
382 title = "Short-range order, bulk moduli, and physical trends in
383 c-$Si1-x$$Cx$ alloys",
384 author = "P. C. Kelires",
385 journal = "Phys. Rev. B",
388 pages = "8784--8787",
392 doi = "10.1103/PhysRevB.55.8784",
393 publisher = "American Physical Society",
394 notes = "c strained si, montecarlo md, bulk moduli, next
399 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
400 Application to the $Si1-x-yGexCy$ System",
401 author = "P. C. Kelires",
402 journal = "Phys. Rev. Lett.",
405 pages = "1114--1117",
409 doi = "10.1103/PhysRevLett.75.1114",
410 publisher = "American Physical Society",
411 notes = "mc md, strain compensation in si ge by c insertion",
415 title = "{EPR} Observation of the Isolated Interstitial Carbon
417 author = "G. D. Watkins and K. L. Brower",
418 journal = "Phys. Rev. Lett.",
421 pages = "1329--1332",
425 doi = "10.1103/PhysRevLett.36.1329",
426 publisher = "American Physical Society",
427 notes = "epr observations of 100 interstitial carbon atom in
432 title = "{EPR} identification of the single-acceptor state of
433 interstitial carbon in silicon",
434 author = "G. D. Watkins L. W. Song",
435 journal = "Phys. Rev. B",
438 pages = "5759--5764",
442 doi = "10.1103/PhysRevB.42.5759",
443 publisher = "American Physical Society",
447 title = "Carbon incorporation into Si at high concentrations by
448 ion implantation and solid phase epitaxy",
449 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
450 Picraux and J. K. Watanabe and J. W. Mayer",
451 journal = "J. Appl. Phys.",
456 doi = "10.1063/1.360806",
457 notes = "strained silicon, carbon supersaturation",
460 @Article{laveant2002,
461 title = "Epitaxy of carbon-rich silicon with {MBE}",
462 author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
463 journal = "Materials Science and Engineering B",
467 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
468 notes = "low c in si, tensile stress to compensate compressive
469 stress, avoid sic precipitation",
475 author = "P. Werner and S. Eichler and G. Mariani and R.
476 K{\"{o}}gler and W. Skorupa",
477 title = "Investigation of {C}[sub x]Si defects in {C} implanted
478 silicon by transmission electron microscopy",
481 journal = "Applied Physics Letters",
485 keywords = "silicon; ion implantation; carbon; crystal defects;
486 transmission electron microscopy; annealing; positron
487 annihilation; secondary ion mass spectroscopy; buried
488 layers; precipitation",
489 URL = "http://link.aip.org/link/?APL/70/252/1",
490 doi = "10.1063/1.118381",
491 notes = "si-c complexes, agglomerate, sic in si matrix, sic
496 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
497 Picraux and J. K. Watanabe and J. W. Mayer",
499 title = "Precipitation and relaxation in strained Si[sub 1 -
500 y]{C}[sub y]/Si heterostructures",
503 journal = "Journal of Applied Physics",
506 pages = "3656--3668",
507 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
508 URL = "http://link.aip.org/link/?JAP/76/3656/1",
509 doi = "10.1063/1.357429",
510 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
514 title = "Prospects for device implementation of wide band gap
516 author = "J. H. Edgar",
517 journal = "J. Mater. Res.",
522 doi = "10.1557/JMR.1992.0235",
523 notes = "properties wide band gap semiconductor, sic
527 @Article{zirkelbach2007,
528 title = "Monte Carlo simulation study of a selforganisation
529 process leading to ordered precipitate structures",
530 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
532 journal = "Nucl. Instr. and Meth. B",
539 doi = "doi:10.1016/j.nimb.2006.12.118",
540 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
544 @Article{zirkelbach2006,
545 title = "Monte-Carlo simulation study of the self-organization
546 of nanometric amorphous precipitates in regular arrays
547 during ion irradiation",
548 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
550 journal = "Nucl. Instr. and Meth. B",
557 doi = "doi:10.1016/j.nimb.2005.08.162",
558 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
562 @Article{zirkelbach2005,
563 title = "Modelling of a selforganization process leading to
564 periodic arrays of nanometric amorphous precipitates by
566 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
568 journal = "Comp. Mater. Sci.",
575 doi = "doi:10.1016/j.commatsci.2004.12.016",
576 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
581 title = "High-dose carbon implantations into silicon:
582 fundamental studies for new technological tricks",
583 author = "J. K. N. Lindner",
584 journal = "Appl. Phys. A",
588 doi = "10.1007/s00339-002-2062-8",
589 notes = "ibs, burried sic layers",
593 author = "B. J. Alder and T. E. Wainwright",
594 title = "Phase Transition for a Hard Sphere System",
597 journal = "The Journal of Chemical Physics",
600 pages = "1208--1209",
601 URL = "http://link.aip.org/link/?JCP/27/1208/1",
602 doi = "10.1063/1.1743957",
606 author = "B. J. Alder and T. E. Wainwright",
607 title = "Studies in Molecular Dynamics. {I}. General Method",
610 journal = "The Journal of Chemical Physics",
614 URL = "http://link.aip.org/link/?JCP/31/459/1",
615 doi = "10.1063/1.1730376",
618 @Article{tersoff_si1,
619 title = "New empirical model for the structural properties of
621 author = "J. Tersoff",
622 journal = "Phys. Rev. Lett.",
629 doi = "10.1103/PhysRevLett.56.632",
630 publisher = "American Physical Society",
633 @Article{tersoff_si2,
634 title = "New empirical approach for the structure and energy of
636 author = "J. Tersoff",
637 journal = "Phys. Rev. B",
640 pages = "6991--7000",
644 doi = "10.1103/PhysRevB.37.6991",
645 publisher = "American Physical Society",
648 @Article{tersoff_si3,
649 title = "Empirical interatomic potential for silicon with
650 improved elastic properties",
651 author = "J. Tersoff",
652 journal = "Phys. Rev. B",
655 pages = "9902--9905",
659 doi = "10.1103/PhysRevB.38.9902",
660 publisher = "American Physical Society",
664 title = "Empirical Interatomic Potential for Carbon, with
665 Applications to Amorphous Carbon",
666 author = "J. Tersoff",
667 journal = "Phys. Rev. Lett.",
670 pages = "2879--2882",
674 doi = "10.1103/PhysRevLett.61.2879",
675 publisher = "American Physical Society",
679 title = "Modeling solid-state chemistry: Interatomic potentials
680 for multicomponent systems",
681 author = "J. Tersoff",
682 journal = "Phys. Rev. B",
685 pages = "5566--5568",
689 doi = "10.1103/PhysRevB.39.5566",
690 publisher = "American Physical Society",
694 title = "Point defects and dopant diffusion in silicon",
695 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
696 journal = "Rev. Mod. Phys.",
703 doi = "10.1103/RevModPhys.61.289",
704 publisher = "American Physical Society",
708 title = "Silicon carbide: synthesis and processing",
709 journal = "Nuclear Instruments and Methods in Physics Research
710 Section B: Beam Interactions with Materials and Atoms",
715 note = "Radiation Effects in Insulators",
717 doi = "DOI: 10.1016/0168-583X(96)00065-1",
718 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
723 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
724 Lin and B. Sverdlov and M. Burns",
726 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
727 ZnSe-based semiconductor device technologies",
730 journal = "Journal of Applied Physics",
733 pages = "1363--1398",
734 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
735 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
736 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
738 URL = "http://link.aip.org/link/?JAP/76/1363/1",
739 doi = "10.1063/1.358463",