8 \setbeamercovered{transparent}
11 \usepackage[german]{babel}
12 \usepackage[latin1]{inputenc}
13 \usepackage[T1]{fontenc}
18 \usepackage{pgf,pgfarrows,pgfnodes,pgfautomata,pgfheaps,pgfshade}
19 %\usepackage{pstricks}
21 \graphicspath{{../img}}
26 \title{the molecular dynamic simulation {\em posic}}
27 \subtitle{atomistic simulation of the precipitation process of silicon carbide in carbon doped silicon}
28 \author[F. Zirkelbach]{Frank Zirkelbach \\ \texttt{frank.zirkelbach@physik.uni-augsburg.de}}
30 experimental physics IV\\
31 university of augsburg
39 \tableofcontents[currentsection]
49 \tableofcontents%[pausesections]
52 \section{introduction}
54 \subsection{as things are now}
57 \frametitle{introduction}
58 \framesubtitle{as things are now}
59 \begin{block}{precipitation process of $SiC$ in silicon}
62 (investigated by high resolution electron microscopy)
64 \item formation of $C-Si$-dumbbells on regular $c-Si$ lattice
66 \item agglomeration into large clusters (embryos)
69 (not accessible by experiment)
71 \item cluster size reaches a radius of $2-4 \, nm$
72 \item high interfacial energy due to the $SiC/Si$ lattice
73 mismatch (~$20 \, \%$) is overcome
74 \item precipitation process of $SiC$
80 \subsection{motivation}
83 \frametitle{introduction}
84 \framesubtitle{motivation}
85 \begin{block}{why studying the $SiC$ nucleation process}
88 \item understanding the 2 steps of the precipitation process\\
89 $\Rightarrow$ facilitation of the $SiC$ heteroepitaxy on $c-Si$\\
90 $\Rightarrow$ suppress nucleation of $SiC$ in certain applications
91 \item $SiC$: most rapidly developed wide band gap semiconductor suitable
92 in high temperature, high frequency and high power applications
98 \frametitle{introduction}
99 \framesubtitle{motivation}
100 \begin{block}{why doing an atomistic simulation}
102 \item precipitation process is not understood for the most part
103 \item monitor the atomic structures in early stages of the embryo formation
104 \item atomic rearrangement in the most critical second step\\
105 (which is experimentally not accessible)
106 \item information about the atomic structure and interface of the
107 $SiC$ precipitates and the crystalline silicon\\
108 (including stress fields)
113 \section{experimental observations}
117 \subsection{introduction to atomistic simulations}
120 \frametitle{simulation}
121 \framesubtitle{introduction to atomistic simulations}
125 \subsection{computational methods}
127 \subsection{the {\em posic} simulation}
131 \section{summary \& outlook}