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87 Atomistic simulation study of the silicon carbide precipitation
93 \textsc{F. Zirkelbach}
106 % motivation / properties / applications of silicon carbide
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120 \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
122 \rput[lt](0.5,4){wide band gap}
123 \rput[lt](0.5,3.5){high electric breakdown field}
124 \rput[lt](0.5,3){good electron mobility}
125 \rput[lt](0.5,2.5){high electron saturation drift velocity}
126 \rput[lt](0.5,2){high thermal conductivity}
128 \rput[lt](0.5,1.5){hard and mechanically stable}
129 \rput[lt](0.5,1){chemically inert}
131 \rput[lt](0.5,0.5){radiation hardness}
133 \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
135 \rput[rt](13,3.85){high-temperature, high power}
136 \rput[rt](13,3.5){and high-frequency}
137 \rput[rt](13,3.15){electronic and optoelectronic devices}
139 \rput[rt](13,2.35){material suitable for extreme conditions}
140 \rput[rt](13,2){microelectromechanical systems}
141 \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
143 \rput[rt](13,0.85){first wall reactor material, detectors}
144 \rput[rt](13,0.5){and electronic devices for space}
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152 \includegraphics[width=3cm]{sic_led.eps}
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175 \item Fabrication of silicon carbide and different polytypes
176 \item Precipitation model of 3C-SiC in Si
177 \item Utilized simulation techniques
179 \item Molecular dynamics (MD) simulations
180 \item Density functional theory (DFT) calculations
182 \item C and Si self-interstitial point defects in silicon
183 \item Precipitation simulations
184 \item Summary / Conclusion / Outlook
201 \begin{tabular}{l c c c c c c}
203 & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
205 Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
206 Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
207 Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
208 Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
209 Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
210 Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
211 Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
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226 {\tiny cubic (twist)}
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229 {\tiny hexagonal (no twist)}
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246 Fabrication of silicon carbide
253 SiC - \emph{Born from the stars, perfected on earth.}
257 Conventional thin film SiC growth:
259 \item \underline{Sublimation growth using the modified Lely method}
261 \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
262 \item Surrounded by polycrystalline SiC in a graphite crucible\\
263 at $T=2100-2400 \, ^{\circ} \text{C}$
264 \item Deposition of supersaturated vapor on cooler seed crystal
266 \item \underline{Homoepitaxial growth using CVD}
268 \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
269 \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
270 \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
271 \item High quality but limited in size of substrates
273 \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
275 \item Two steps: carbonization and growth
276 \item $T=650-1050 \, ^{\circ} \text{C}$
277 \item Quality and size not yet sufficient
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287 NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
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302 5. Insulation\\[-7pt]