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87 Atomistic simulation study of the silicon carbide precipitation
93 \textsc{F. Zirkelbach}
106 % motivation / properties / applications of silicon carbide
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120 \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
122 \rput[lt](0.5,4){wide band gap}
123 \rput[lt](0.5,3.5){high electric breakdown field}
124 \rput[lt](0.5,3){good electron mobility}
125 \rput[lt](0.5,2.5){high electron saturation drift velocity}
126 \rput[lt](0.5,2){high thermal conductivity}
128 \rput[lt](0.5,1.5){hard and mechanically stable}
129 \rput[lt](0.5,1){chemically inert}
131 \rput[lt](0.5,0.5){radiation hardness}
133 \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
135 \rput[rt](13,3.85){high-temperature, high power}
136 \rput[rt](13,3.5){and high-frequency}
137 \rput[rt](13,3.15){electronic and optoelectronic devices}
139 \rput[rt](13,2.35){material suitable for extreme conditions}
140 \rput[rt](13,2){microelectromechanical systems}
141 \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
143 \rput[rt](13,0.85){first wall reactor material, detectors}
144 \rput[rt](13,0.5){and electronic devices for space}
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175 \item Fabrication of silicon carbide
176 \item Precipitation model
177 \item Utilized simulation techniques
179 \item Molecular dynamics (MD) simulations
180 \item Density functional theory (DFT) calculations
182 \item Point defects in silicon
183 \item Precipitation simulations
184 \item Summary / Conclusion / Outlook
199 SiC - \emph{Born from the stars, perfected on earth.}
203 Herstellung d"unner SiC-Filme:
205 \item modifizierter Lely-Prozess
207 \item Impfkristall mit $T=2200 \, ^{\circ} \text{C}$
208 \item umgeben von polykristallinen SiC mit
209 $T=2400 \, ^{\circ} \text{C}$
211 \item CVD Homoepitaxie
213 \item 'step controlled epitaxy' auf 6H-SiC-Substrat
214 \item C$_3$H$_8$/SiH$_4$/H$_2$ bei $1500 \, ^{\circ} \text{C}$
215 \item Winkel $\rightarrow$ 3C/6H/4H-SiC
216 \item hohe Qualit"at aber limitiert durch\\
219 \item CVD/MBE Heteroepitaxie von 3C-SiC auf Si
221 \item 2 Schritte: Karbonisierung und Wachstum
222 \item $T=650-1050 \, ^{\circ} \text{C}$
223 \item Qualit"at/Gr"o"se noch nicht ausreichend
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233 NASA: 6H-SiC LED und 3C-SiC LED\\[-6pt]
234 nebeneinander auf 6H-SiC-Substrat