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18 % Achtung Werte unter .8 verbrauchen zu viel Tinte!!!
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31 \centerline{{\Huge \bfseries Molecular dynamics simulation
32 of defect formation and precipitation}}
34 \centerline{{\Huge \bfseries in heavily carbon doped silicon}}
36 \centerline{\huge\textsc {\underline{F.~Zirkelbach}$^1$,
38 K.~Nordlund$^2$, B.~Stritzker$^1$}}
41 \begin{minipage}{.065\textwidth}
42 \includegraphics[height=5.5cm]{uni-logo.eps}
44 \begin{minipage}{.57\textwidth}
45 \centerline{\Large $^1$ Experimentalphysik IV, Institut f\"ur Physik,
46 Universit\"at Augsburg,}
47 \centerline{\Large Universit\"atsstr. 1, D-86135 Augsburg, Germany}
49 \begin{minipage} {.065\textwidth}
50 \includegraphics[height=5cm]{Lehrstuhl-Logo.eps}
54 \begin{minipage}{.20\textwidth}
55 \includegraphics[height=5.5cm]{logo_eng.eps}
57 \begin{minipage}{.50\textwidth}
58 \centerline{\Large $^2$ Accelerator Laboratory,
59 Department of Physical Sciences,
60 University of Helsinki,}
61 \centerline{\Large Pietari Kalmink. 2, 00014 Helsinki, Finland}
71 {\bf Reasons for understanding the 3C-SiC precipitation process}
73 \item Significant technological progress
74 in 3C-SiC wide band gap semiconductor thin film formation [1].
75 \item New perspectives for processes relying upon prevention of
76 precipitation, e.g. fabrication of strained pseudomorphic
77 $\text{Si}_{1-y}\text{C}_y$ heterostructures [2].
80 [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\
82 [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
83 J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
86 \section*{Crystalline silicon and cubic silicon carbide}
87 {\bf Lattice types and unit cells:}
89 \item Crystalline silicon (c-Si) has diamond structure\\
90 $\Rightarrow {\color{si-yellow}\bullet}$ and
91 ${\color{gray}\bullet}$ are Si atoms
92 \item Cubic silicon carbide (3C-SiC) has zincblende structure\\
93 $\Rightarrow {\color{si-yellow}\bullet}$ are Si atoms,
94 ${\color{gray}\bullet}$ are C atoms
96 \begin{minipage}{15cm}
97 {\bf Lattice constants:}
99 4a_{\text{c-Si}}\approx5a_{\text{3C-SiC}}
101 {\bf Silicon density:}
103 \frac{n_{\text{3C-SiC}}}{n_{\text{c-Si}}}=97,66\,\%
106 \begin{minipage}{10cm}
107 \includegraphics[width=10cm]{sic_unit_cell.eps}
111 \section*{Supposed Si to 3C-SiC conversion}
112 {\bf Schematic of the conversion mechanism}\\\\
113 \begin{minipage}{7.8cm}
114 \includegraphics[width=7.7cm]{sic_prec_seq_01.eps}
117 \begin{minipage}{7.8cm}
118 \includegraphics[width=7.7cm]{sic_prec_seq_02.eps}
121 \begin{minipage}{7.8cm}
122 \includegraphics[width=7.7cm]{sic_prec_seq_03.eps}
126 \item Formation of C-Si dumbbells on regular c-Si lattice sites
127 \item Agglomeration into large clusters (embryos)
128 \item Precipitation of 3C-SiC + Creation of interstitials
131 {\bf Experimental observations} [3]
133 \item Minimal diameter of precipitation: 2 - 4 nm
134 \item Equal orientation of c-Si and 3C-SiC (hkl)-planes
137 [3] J. K. N. Lindner, Appl. Phys. A 77 (2003) 27.
145 \section*{Simulation algorithm}
146 Hier die Simulation rein!
156 \section*{Structural/compositional information}
160 \section*{Recipe for thick films of ordered lamellae}
164 \section*{Conclusions}
165 Hier die Zusammenfassung