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\begin{document}

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\begin{frontmatter}

\title{Monte Carlo simulation study\\of a selforganization process\\leading to
       ordered precipitate structures}

\author[augsburg]{F. Zirkelbach\corauthref{cor}}
\author[augsburg]{M. Häberlen}
\author[augsburg]{J. K. N. Lindner}
\author[augsburg]{B. Stritzker}

\corauth[cor]{Corresponding author.\\
              Tel.: +49-821-5983008; fax: +49-821-5983425.\\
              E-mail address: frank.zirkelbach@physik.uni-augsburg.de (Frank
              Zirkelbach)}

\address[augsburg]{Universität Augsburg, Institut für Physik,
                   Universitätsstrasse 1,\\D-86135 Augsburg, Germany}

\begin{abstract}
Periodically arranged, self-organized, nanometric, amorphous precipitates have been observed at high-dose ion implantations for a number of ion/target combinations at certain implantation conditions.
A model describing the ordering process based on compressive stress exerted by the amorphous inclusions as a result of the density change upon amorphization is introduced.
A Monte Carlo simulation code, which focuses on high dose carbon implantation into silicon, is able to reproduce experimentally observed results.
By means of simulation the selforganization process gets traceable and detailed information about the compositional and structural state during the ordering process is obtained.
Based on simulation results, a recipe is proposed for producing broad distributions of lamellar ordered structures.
\end{abstract}

\begin{keyword}
Monte Carlo simulation; Self-organization; Precipitation; Amorphization;
Nanostructures; Ion irradiation\\
\PACS 02.70.Uu; 61.72.Tt; 81.16.Rf
\end{keyword}

\end{frontmatter}

\section{Introduction}

Precipitates, as a result of high-dose ion implantation into solids, are usually statistically arranged and have a broad size distribution.
However, the formation of ordered, lamellar inclusions has been observed for a number of ion/target combinations at certain implantation conditions \cite{ommen,specht,ishimaru}.
An inevitable condition for the material to observe this special self-organized arrangement is a largely reduced density of host atoms in the amorphous phase compared to the crystalline host lattice.
As a consequence stress is exerted by the amorphous inclusions which is responsible for the ordering process.
A model to describe the process is introduced.
The implementation of a simulation code based on that model is discussed.
Simulation results are compared to experimental data, focussing on high-dose carbon implantation into silicon.
Finally a guideline for fabrication of broad ditributions of lamellar ordered structures is suggested.

\section{Model}
High-dose carbon implantations at $150 \, ^{\circ} \mathrm{C}$ with an energy of $180 \, keV$ result

\section{Simulation}

\section{Results}

\section{Summary and conclusion}

\begin{thebibliography}{20}
\bibitem{ommen} A. H. van Ommen. Nucl. Instr. and Meth. B 39 (1989) 194.
\bibitem{specht} E. D. Specht, D. A. Walko, S. J. Zinkle. Nucl. Instr. and Meth. B 84 (2000) 390.
\bibitem{ishimaru} M. Ishimaru,  R. M. Dickerson, K. E. Sickafus. Nucl. Instr. and Meth. B 166-167 (2000) 390.
\end{thebibliography}

\end{document}
