\documentclass[portrait,a0b,final]{a0poster}
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\begin{document}

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% header
\begin{header}
     \centerline{{\Huge \bfseries Molecular dynamics simulation
                                  of defect formation and precipitation}}
     \vspace*{0.5cm}
     \centerline{{\Huge \bfseries in heavily carbon doped silicon}}
     \vspace*{1cm}
     \centerline{\huge\textsc {\underline{F.~Zirkelbach}$^1$,
                               J.~K.~N.~Lindner$^1$,
                               K.~Nordlund$^2$, B.~Stritzker$^1$}}
     \vspace*{1cm}
     \begin{center}
       \begin{minipage}{.065\textwidth}
         \includegraphics[height=5.5cm]{uni-logo.eps}
       \end{minipage}
       \begin{minipage}{.57\textwidth}
         \centerline{\Large $^1$ Experimentalphysik IV, Institut f\"ur Physik,
                            Universit\"at Augsburg,}
         \centerline{\Large Universit\"atsstr. 1,  D-86135 Augsburg, Germany}
       \end{minipage}
       \begin{minipage} {.065\textwidth}
          \includegraphics[height=5cm]{Lehrstuhl-Logo.eps}
       \end{minipage}
     \end{center}
     \begin{center}
       \begin{minipage}{.20\textwidth}
         \includegraphics[height=5.5cm]{logo_eng.eps}
       \end{minipage}
       \begin{minipage}{.50\textwidth}
         \centerline{\Large $^2$ Accelerator Laboratory,
                            Department of Physical Sciences,
                            University of Helsinki,}
         \centerline{\Large Pietari Kalmink. 2, 00014 Helsinki, Finland}
       \end{minipage}
     \end{center}
\end{header}

\begin{poster}

\begin{pcolumn}
  \begin{pbox}
    \section*{Motivation}
    {\bf Reasons for understanding the 3C-SiC precipitation process}
    \begin{itemize}
      \item Significant technological progress
            in 3C-SiC wide band gap semiconductor thin film formation [1].
      \item New perspectives for processes relying upon prevention of
            precipitation, e.g. fabrication of strained pseudomorphic
	    $\text{Si}_{1-y}\text{C}_y$ heterostructures [2].
    \end{itemize}
    {\tiny
     [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\
    {\tiny
     [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
         J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
  \end{pbox}
  \begin{pbox}
    \section*{Crystalline silicon and cubic silicon carbide}
    {\bf Lattice types and unit cells:}
    \begin{itemize}
      \item Crystalline silicon (c-Si) has diamond structure\\
            $\Rightarrow {\color{si-yellow}\bullet}$ and
            ${\color{gray}\bullet}$ are Si atoms
      \item Cubic silicon carbide (3C-SiC) has zincblende structure\\
            $\Rightarrow {\color{si-yellow}\bullet}$ are Si atoms,
            ${\color{gray}\bullet}$ are C atoms
    \end{itemize}
    \begin{minipage}{15cm}
    {\bf Lattice constants:}
    \[
    4a_{\text{c-Si}}\approx5a_{\text{3C-SiC}}
    \]
    {\bf Silicon density:}
    \[
    \frac{n_{\text{3C-SiC}}}{n_{\text{c-Si}}}=97,66\,\%
    \]
    \end{minipage}
    \begin{minipage}{10cm}
      \includegraphics[width=10cm]{sic_unit_cell.eps}
    \end{minipage}
  \end{pbox}
  \begin{pbox}
    \section*{Supposed Si to 3C-SiC conversion}
    {\bf Schematic of the conversion mechanism}\\\\
    \begin{minipage}{7.8cm}
    \includegraphics[width=7.7cm]{sic_prec_seq_01.eps}
    \end{minipage}
    \hspace{0.6cm}
    \begin{minipage}{7.8cm}
    \includegraphics[width=7.7cm]{sic_prec_seq_02.eps}
    \end{minipage}
    \hspace{0.6cm}
    \begin{minipage}{7.8cm}
    \includegraphics[width=7.7cm]{sic_prec_seq_03.eps}
    \end{minipage}
    \vspace{1cm}
    \begin{enumerate}
      \item Formation of C-Si dumbbells on regular c-Si lattice sites
      \item Agglomeration into large clusters (embryos)
      \item Precipitation of 3C-SiC + Creation of interstitials
    \end{enumerate}
    \vspace{1cm}
    {\bf Experimental observations} [3]
    \begin{itemize}
      \item Minimal diameter of precipitation: 2 - 4 nm
      \item Equal orientation of c-Si and 3C-SiC (hkl)-planes
    \end{itemize}
    {\tiny
     [3] J. K. N. Lindner, Appl. Phys. A 77 (2003) 27.
    }
  \end{pbox}

\end{pcolumn}
\begin{pcolumn}

  \begin{pbox}
    \section*{Simulation algorithm}
    Hier die Simulation rein!
  \end{pbox}
  \begin{pbox}
    \section*{Results}
    Hier die Resultate!
  \end{pbox}
\end{pcolumn}
\begin{pcolumn}

  \begin{pbox}
	\section*{Structural/compositional information}
	blabla
  \end{pbox}
  \begin{pbox}
	\section*{Recipe for thick films of ordered lamellae}
	blabla
  \end{pbox}
  \begin{pbox}
    \section*{Conclusions}
    Hier die Zusammenfassung
  \end{pbox}

\end{pcolumn}
\end{poster}
\end{document}

