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% topic

\begin{slide}
\begin{center}

 \vspace{16pt}

 {\LARGE\bf
  Atomistic simulation study of the silicon carbide precipitation
  in silicon
 }

 \vspace{48pt}

 \textsc{F. Zirkelbach}

 \vspace{48pt}

 Lehrstuhlseminar

 \vspace{08pt}

 17. Juni 2010

\end{center}
\end{slide}

% motivation / properties / applications of silicon carbide
\begin{slide}

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 \rput[lt](0.2,4.6){\color{gray}PROPERTIES}

 \rput[lt](0.5,4){wide band gap}
 \rput[lt](0.5,3.5){high electric breakdown field}
 \rput[lt](0.5,3){good electron mobility}
 \rput[lt](0.5,2.5){high electron saturation drift velocity}
 \rput[lt](0.5,2){high thermal conductivity}

 \rput[lt](0.5,1.5){hard and mechanically stable}
 \rput[lt](0.5,1){chemically inert}

 \rput[lt](0.5,0.5){radiation hardness}

 \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}

 \rput[rt](13,3.85){high-temperature, high power}
 \rput[rt](13,3.5){and high-frequency}
 \rput[rt](13,3.15){electronic and optoelectronic devices}

 \rput[rt](13,2.35){material suitable for extreme conditions}
 \rput[rt](13,2){microelectromechanical systems}
 \rput[rt](13,1.65){abrasives, cutting tools, heating elements}

 \rput[rt](13,0.85){first wall reactor material, detectors}
 \rput[rt](13,0.5){and electronic devices for space}

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% contents

\begin{slide}

{\large\bf
 Outline
}

 \begin{itemize}
  \item Fabrication of silicon carbide and different polytypes
  \item Precipitation model of 3C-SiC in Si
  \item Utilized simulation techniques
        \begin{itemize}
         \item Molecular dynamics (MD) simulations
         \item Density functional theory (DFT) calculations
        \end{itemize}
  \item C and Si self-interstitial point defects in silicon
  \item Precipitation simulations
  \item Summary / Conclusion / Outlook
 \end{itemize}

\end{slide}

% start of contents

\begin{slide}

 {\large\bf
  Polytypes of SiC
 }

 \vspace{4cm}

 \small

\begin{tabular}{l | c c c c c c}
\hline
 & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
\hline
Hardness [Mohs] & 9.6 & & & 6.5 & & 10 \\
Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
Break down field [$10^6$ V/cm] & & & & & & \\
Saturation drift velocity [] & & & & & & \\
Electron mobility [] & & & & & & \\
Hole mobility [] & & & & & & \\
Thermal conductivity [] & & & & & & \\
\hline
\end{tabular}

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\end{slide}

\begin{slide}

 {\large\bf
  Fabrication of silicon carbide
 }

 \small
 
 \vspace{4pt}

 SiC - \emph{Born from the stars, perfected on earth.}
 
 \vspace{4pt}

 Conventional thin film SiC growth:
 \begin{itemize}
  \item \underline{Sublimation growth using the modified Lely method}
        \begin{itemize}
         \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
         \item Surrounded by polycrystalline SiC in a graphite crucible\\
               at $T=2100-2400 \, ^{\circ} \text{C}$
         \item Deposition of supersaturated vapor on cooler seed crystal
        \end{itemize}
  \item \underline{Homoepitaxial growth using CVD}
        \begin{itemize}
         \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
         \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
         \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
         \item High quality but limited in size of substrates
        \end{itemize}
  \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
        \begin{itemize}
         \item Two steps: carbonization and growth
         \item $T=650-1050 \, ^{\circ} \text{C}$
         \item Quality and size not yet sufficient
        \end{itemize}
 \end{itemize}

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  {\tiny
   NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
   on 6H-SiC substrate
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   1. Lid\\[-7pt]
   2. Heating\\[-7pt]
   3. Source\\[-7pt]
   4. Crucible\\[-7pt]
   5. Insulation\\[-7pt]
   6. Seed crystal
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\end{slide}

\end{document}
