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% topic

\begin{slide}
\begin{center}

 \vspace{16pt}

 {\LARGE\bf
  Atomistic simulation study of the silicon carbide precipitation
  in silicon
 }

 \vspace{48pt}

 \textsc{F. Zirkelbach}

 \vspace{48pt}

 Lehrstuhlseminar

 \vspace{08pt}

 17. Juni 2010

\end{center}
\end{slide}

% motivation / properties / applications of silicon carbide
\begin{slide}

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 \rput[lt](0.2,4.6){\color{gray}PROPERTIES}

 \rput[lt](0.5,4){wide band gap}
 \rput[lt](0.5,3.5){high electric breakdown field}
 \rput[lt](0.5,3){good electron mobility}
 \rput[lt](0.5,2.5){high electron saturation drift velocity}
 \rput[lt](0.5,2){high thermal conductivity}

 \rput[lt](0.5,1.5){hard and mechanically stable}
 \rput[lt](0.5,1){chemically inert}

 \rput[lt](0.5,0.5){radiation hardness}

 \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}

 \rput[rt](13,3.85){high-temperature, high power}
 \rput[rt](13,3.5){and high-frequency}
 \rput[rt](13,3.15){electronic and optoelectronic devices}

 \rput[rt](13,2.35){material suitable for extreme conditions}
 \rput[rt](13,2){microelectromechanical systems}
 \rput[rt](13,1.65){abrasives, cutting tools, heating elements}

 \rput[rt](13,0.85){first wall reactor material, detectors}
 \rput[rt](13,0.5){and electronic devices for space}

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% contents

\begin{slide}

{\large\bf
 Outline
}

 \begin{itemize}
  \item Fabrication of silicon carbide
  \item Precipitation model
  \item Utilized simulation techniques
        \begin{itemize}
         \item Molecular dynamics (MD) simulations
         \item Density functional theory (DFT) calculations
        \end{itemize}
  \item Point defects in silicon
  \item Precipitation simulations
  \item Summary / Conclusion / Outlook
 \end{itemize}

\end{slide}

% start of contents

\begin{slide}

 {\large\bf
  Motivation
 }
 
 \vspace{4pt}

 SiC - \emph{Born from the stars, perfected on earth.}

 \vspace{4pt}

 Herstellung d"unner SiC-Filme:
 \begin{itemize}
  \item modifizierter Lely-Prozess
        \begin{itemize}
         \item Impfkristall mit $T=2200 \, ^{\circ} \text{C}$
         \item umgeben von polykristallinen SiC mit
               $T=2400 \, ^{\circ} \text{C}$
        \end{itemize}
  \item CVD Homoepitaxie
        \begin{itemize}
         \item 'step controlled epitaxy' auf 6H-SiC-Substrat
         \item C$_3$H$_8$/SiH$_4$/H$_2$ bei $1500 \, ^{\circ} \text{C}$
         \item Winkel $\rightarrow$ 3C/6H/4H-SiC
         \item hohe Qualit"at aber limitiert durch\\
               Substratgr"o"se
        \end{itemize}
  \item CVD/MBE Heteroepitaxie von 3C-SiC auf Si
        \begin{itemize}
         \item 2 Schritte: Karbonisierung und Wachstum
         \item $T=650-1050 \, ^{\circ} \text{C}$
         \item Qualit"at/Gr"o"se noch nicht ausreichend
        \end{itemize}
 \end{itemize}

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   NASA: 6H-SiC LED und 3C-SiC LED\\[-6pt]
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\end{slide}

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