\chapter{Introduction}

Silicon carbide (SiC) has a number of remarkable physical and chemical properties that make it a promising new material in various fields of applications.
The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}.
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New means: Ion beam synthesis (IBS) of burried SiC layers ...
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Model of precipitation ...
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Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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Control of dopant diffusion in silicon device manufacturing / transient enhanced diffusion (TED) ...
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Strained silicon to achieve higher charge carrier velocities ...
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In chapter ...


