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[lectures/latex.git] / posic / thesis / md.tex

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 \chapter{Silicon carbide precipitation simulations}
+\label{chapter:md}
 
 The molecular dynamics (MD) technique is used to gain insight into the behavior of carbon existing in different concentrations in crystalline silicon on the microscopic level at finite temperatures.
 Both, quantum-mechanical and classical potential molecular dynamics simulations are performed.
@@ -495,7 +496,7 @@ Since longer time scales are not sufficient \ldots
 {\color{red}Todo: other approaches?}
 
 {\color{red}Todo: ART MD?\\
-How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from his configuration?
+How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from this configuration?
 }
 
 \section{Conclusions concerning the SiC conversion mechanism}