Solving this issue remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
\subsection{Ion beam synthesis of cubic silicon carbide}
+\label{subsection:ibs}
Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
Thus, alternative approaches to fabricate SiC have been explored.