+
+@Article{vashishath08,
+ title = "Recent trends in silicon carbide device research",
+ journal = "Mj. Int. J. Sci. Tech.",
+ volume = "2",
+ number = "03",
+ pages = "444--470",
+ year = "2008",
+ author = "Munish Vashishath and Ashoke K. Chatterjee",
+ URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
+ notes = "sic polytype electronic properties",
+}
+
+@Article{nelson69,
+ author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
+ collaboration = "",
+ title = "Growth and Properties of beta-Si{C} Single Crystals",
+ publisher = "AIP",
+ year = "1966",
+ journal = "Journal of Applied Physics",
+ volume = "37",
+ number = "1",
+ pages = "333--336",
+ URL = "http://link.aip.org/link/?JAP/37/333/1",
+ doi = "10.1063/1.1707837",
+ notes = "sic melt growth",
+}
+
+@Article{arkel25,
+ author = "A. E. van Arkel and J. H. de Boer",
+ title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
+ und Thoriummetall",
+ publisher = "WILEY-VCH Verlag GmbH",
+ year = "1925",
+ journal = "Z. Anorg. Chem.",
+ volume = "148",
+ pages = "345--350",
+ URL = "http://dx.doi.org/10.1002/zaac.19251480133",
+ doi = "10.1002/zaac.19251480133",
+ notes = "van arkel apparatus",
+}
+
+@Article{moers31,
+ author = "K. Moers",
+ year = "1931",
+ journal = "Z. Anorg. Chem.",
+ volume = "198",
+ pages = "293",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{kendall53,
+ author = "J. T. Kendall",
+ title = "Electronic Conduction in Silicon Carbide",
+ publisher = "AIP",
+ year = "1953",
+ journal = "The Journal of Chemical Physics",
+ volume = "21",
+ number = "5",
+ pages = "821--827",
+ URL = "http://link.aip.org/link/?JCP/21/821/1",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{lely55,
+ author = "J. A. Lely",
+ year = "1955",
+ journal = "Ber. Deut. Keram. Ges.",
+ volume = "32",
+ pages = "229",
+ notes = "lely sublimation growth process",
+}
+
+@Article{knippenberg63,
+ author = "W. F. Knippenberg",
+ year = "1963",
+ journal = "Philips Res. Repts.",
+ volume = "18",
+ pages = "161",
+ notes = "acheson process",
+}
+
+@Article{hoffmann82,
+ author = "L. Hoffmann and G. Ziegler and D. Theis and C.
+ Weyrich",
+ collaboration = "",
+ title = "Silicon carbide blue light emitting diodes with
+ improved external quantum efficiency",
+ publisher = "AIP",
+ year = "1982",
+ journal = "Journal of Applied Physics",
+ volume = "53",
+ number = "10",
+ pages = "6962--6967",
+ keywords = "light emitting diodes; silicon carbides; quantum
+ efficiency; visible radiation; experimental data;
+ epitaxy; fabrication; medium temperature; layers;
+ aluminium; nitrogen; substrates; pn junctions;
+ electroluminescence; spectra; current density;
+ optimization",
+ URL = "http://link.aip.org/link/?JAP/53/6962/1",
+ doi = "10.1063/1.330041",
+ notes = "blue led, sublimation process",
+}
+
+@Article{neudeck95,
+ author = "Philip Neudeck",
+ affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+ Road 44135 Cleveland OH",
+ title = "Progress in silicon carbide semiconductor electronics
+ technology",
+ journal = "Journal of Electronic Materials",
+ publisher = "Springer Boston",
+ ISSN = "0361-5235",
+ keyword = "Chemistry and Materials Science",
+ pages = "283--288",
+ volume = "24",
+ issue = "4",
+ URL = "http://dx.doi.org/10.1007/BF02659688",
+ note = "10.1007/BF02659688",
+ year = "1995",
+ notes = "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}