-Furthermore, the migration barrier is still higher than the activation energy observed for a single C$_{\text{i}}$ \hkl<1 0 0> DB in c-Si.\r
-The migration barrier of a C$_{\text{i}}$ DB in a complex system is assumed to approximate the barrier in a separated system with increasing defect separation distance.\r
-Thus, lower migration barriers are expected for separating C$_{\text{i}}$ DBs.\r
-% calculate?!?\r
-However, low binding energies ... and the difference needs to be overcome too.\r
-It is bound to precapture state and only \r
-However if the activation energy is $>>$ than the difference in energy of the two configurations both states are equally occupied.\r
-And at increased temperatures that enable such diffusion processes the entropy comes into play.\r
-A promising configuration ... -2.25, and the amoun tof equivalent configurations is twice as high.\r
+Furthermore, the migration barrier of \unit[1.2]{eV} is still higher than the activation energy of \unit[0.9]{eV} observed for a single C$_{\text{i}}$ \hkl<1 0 0> DB in c-Si.\r
+The migration barrier of a C$_{\text{i}}$ DB in a complex system is assumed to approximate the barrier of a DB in a separated system with increasing defect separation.\r
+Thus, lower migration barriers are expected for pathways resulting in larger separations of the C$_{\text{i}}$ DBs.\r
+% calculate?!? ... hopefully acknowledged by 188-225 calc\r
+However, if the increase of separation is accompanied by an increase in binding energy, this difference is needed in addition to the activation energy for the respective migration process.\r
+Configurations, which exhibit both, a low binding energy as well as targeting transitions with low activation energies are, thus, most probable C$_{\text{i}}$ complex structures.\r
+On the other hand, if elevated temperatures enable migrations with huge activation energies, the comparably small differences in configurational energy can be neglected resulting in an almost equal occupation of these configurations.\r
+In both cases the configuration yielding a binding energy of \unit[-2.25]{eV} is promising.\r
+First of all it constitutes the second most energetically favorable structure.\r
+Secondly, a migration path with a barrier as low as \unit[?.?]{eV} exists starting from a configuration of largely separated defects exhibiting a low binding energy (\unit[-1.88]{eV}).\r
+The migration barrier and correpsonding structures are shown in Fig.~\ref{fig:188-225}.\r
+% 188 - 225 transition in progress\r
+\begin{figure}\r
+\includegraphics[width=\columnwidth]{188-225.ps}\r
+\caption{Migration barrier and structures of the transition of a C$_{\text{i}}$ \hkl[0 -1 0] DB at position 5 (left) into a C$_{\text{i}}$ \hkl[1 0 0] DB at position 1 (right). An activation energy of \unit[?.?]{eV} is observed.}\r
+\label{fig:188-225}\r
+\end{figure}\r
+Finally, this type of defect pair is represented four times (two times more often than the ground state configuration) within the investigated configuration space.\r
+The latter is considered very important for high temperatures, which is accompanied by an increase in the entropic contribution to structure formation.\r