+Although the Tersoff potential is one of the most widely used potentials there are some shortcomings.
+Describing the Si interaction Tersoff was unable to find a single parameter set to describe well both, bulk and surface properties.
+Due to this and since the first approach labeled T1 \cite{tersoff_si1} turned out to be unstable \cite{dodson87}, two further parametrizations exist, T2 \cite{tersoff_si2} and T3 \cite{tersoff_si3}.
+While T2 describes well surface properties, T3 yields improved elastic constants and should be used for describing bulk properties.
+However, T3, which is used in the Si/C potential, suffers from an underestimation of the dimer binding energy.
+Similar behavior is found for the C interaction.
+
+For this reason, Erhart and Albe provide a reparametrization of the Tersoff potential based on three independently fitted potentials for the Si-Si, C-C and Si-C interaction \cite{albe_sic_pot}.
+The functional form is nearly the same like the one proposed by Tersoff.
+Differences in the energy functional and the force evaluation routine are pointed out in appendix \ref{app:d_tersoff}.
+For Si ...