+The predominant diffusion mechanism of most dopants in Si based on native self-interstitials \cite{fahey89} has a large impact on the diffusion behavior of dopants that have been implanted in Si.
+The excess population of Si self-interstitials created by low-energy implantations of dopants for shallow junction formation in submicron technologies may enhance the diffusion of the respective dopant during annealing by more than one order of magnitude compared to normal diffusion.
+This kind of diffusion, labeled transient enhanced diffusion (TED), which is driven by the presence of non-equilibrium concentrations of point defects, was first discovered for implantations of boron in Si \cite{hofker74} and is well understood today \cite{michel87,cowern90,stolk95,stolk97}.
+The TED of B was found to be inhibited in the presence of a sufficient amount of incorporated C \cite{covern96}.
+This is due to the reduction of the excess Si self-interstitials with substitutional C atoms forming the C-Si interstitial complex \cite{stolk97,zhu98}.
+Therefore, incorporation of C provides a promising method for suppressing TED enabling an improved shallow junction formation in future Si devices.
+