silicon",
}
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
@Article{hobler05,
title = "Ab initio calculations of the interaction between
native point defects in silicon",
month = oct,
doi = "10.1103/PhysRevB.58.9845",
publisher = "American Physical Society",
- notes = "carbon pairs in si",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
}
@Article{liu02,
}
@Article{zirkelbach10a,
- title = "Defects in Carbon implanted Silicon calculated by
- classical potentials and first principles methods",
- journal = "to be published",
- volume = "",
- number = "",
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{zirkelbach10b,
- title = "Extensive first principles study of carbon defects in
+ title = "First principles study of defects in carbon implanted
silicon",
journal = "to be published",
volume = "",
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{zirkelbach10c,
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{lindner99,
carbon defect, formation energies",
}
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",