pair correlation of amorphous sic, md result analyze}
}
+@Article{batra87,
+ title = {SiC/Si heteroepitaxial growth},
+ author = {M. Kitabatake},
+ journal = {Thin Solid Films},
+ volume = {369},
+ pages = {257--264},
+ numpages = {8},
+ year = {2000},
+ notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
% tight binding
@Article{tang97,
notes = {strained silicon, carbon supersaturation}
}
+% sic formation mechanism
+
+@article{werner97,
+ author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+ title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+ publisher = {AIP},
+ year = {1997},
+ journal = {Applied Physics Letters},
+ volume = {70},
+ number = {2},
+ pages = {252-254},
+ keywords = {silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing;
+ positron annihilation; secondary ion mass spectroscopy;
+ buried layers; precipitation},
+ url = {http://link.aip.org/link/?APL/70/252/1},
+ doi = {10.1063/1.118381},
+ notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+ author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ collaboration = {},
+ title = {Precipitation and relaxation in strained
+ Si[sub 1 - y]C[sub y]/Si heterostructures},
+ publisher = {AIP},
+ year = {1994},
+ journal = {Journal of Applied Physics},
+ volume = {76},
+ number = {6},
+ pages = {3656-3668},
+ keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+ url = {http://link.aip.org/link/?JAP/76/3656/1},
+ doi = {10.1063/1.357429},
+ notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
% properties sic
@Article{edgar92,